KR20090009160A - Light emitting device and method of manufacturing the same - Google Patents

Light emitting device and method of manufacturing the same Download PDF

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Publication number
KR20090009160A
KR20090009160A KR20080070027A KR20080070027A KR20090009160A KR 20090009160 A KR20090009160 A KR 20090009160A KR 20080070027 A KR20080070027 A KR 20080070027A KR 20080070027 A KR20080070027 A KR 20080070027A KR 20090009160 A KR20090009160 A KR 20090009160A
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KR
South Korea
Prior art keywords
light emitting
emitting device
light
emitting element
recess
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KR20080070027A
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Korean (ko)
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KR100958509B1 (en
Inventor
다쿠야 노이치
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니치아 카가쿠 고교 가부시키가이샤
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

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Abstract

The light emitting device and manufacturing method thereof are provided to improve the optical extraction efficiency of the light emitting device by using the collaboration installed within the concave part of the light emitting device. The light emitting device(100) comprises the emitting device, and the package and the conductive wire(106). The emitting device is arranged within the package. The electrode of package and the electrode of the emitting device are connected to the conductive wire. The package comprises the loader, and the supporter(108) and light-transmissive member(107). The emitting device is mounted on the loader. The supporter has the concave part(103) for receiving the distinct semiconductor device(102). The emitting device is coated with the light-transmissive member.

Description

LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting device used for a luminaire, a display, a back light of a mobile phone, a video light auxiliary light source, other light sources, and the like and a manufacturing method thereof.

A light emitting device using a light emitting element such as a light emitting diode is compact in size and has high power efficiency and emits bright colors. In addition, unlike the light bulb, such a light emitting device has no fear of damage due to overheating. Moreover, it has the characteristics that it is excellent in initial drive characteristic, and is strong in repetition of a vibration and ON / OFF lighting. Because of these outstanding characteristics, light emitting devices using light emitting elements such as light emitting diodes (LEDs) and laser diodes (LDs) are used as light sources such as lighting fixtures and backlights of mobile phones.

In such a light emitting device, in order to protect the light emitting element from destruction due to overvoltage, a protective element such as a zener diode may be mounted in the light emitting device. Such a protection element is disposed adjacent to the light emitting element on a supporting substrate on which the light emitting element is mounted, and is electrically connected to the light emitting element.

For example, the light emitting device disclosed in Japanese Patent Application Laid-Open No. 11-54804 includes an insulating substrate provided with first and second electrodes having different polarities, an LED chip disposed on the upper surface side of the first electrode, and a second one. The protection element (for example, a zener diode) arrange | positioned at an electrode, an LED chip, and the sealing resin which coat | covers the conductive wire connected to the said LED chip are provided. In addition, one electrode of the LED chip is connected to the first electrode, and the other electrode is connected to the second electrode by wire. On the other hand, in the protection element, the electrode on the upper surface side is connected with the 1st electrode and the conductive wire, and the electrode on the lower surface side is connected to the 2nd electrode through the conductive adhesive agent.

In such a light emitting device, the light extraction efficiency of the light emitting device as a whole decreases because light from the light emitting element is absorbed by the protective element or is shielded by the protective element. Therefore, if a recess is formed under the protection element so that the height of the protection element is lower than the height of the light emitting element, and the protection element is disposed in the recess, the blocking of light by the protection element can be reduced.

Alternatively, as in the light emitting device disclosed in Japanese Unexamined Patent Publication No. 2007-150229, a reflective member separate from the light transmitting element covering the light emitting element is disposed between the light emitting element and the protective element so that light from the light emitting element can By reflecting to the outside, the protection element does not obstruct the path of light extracted from the light emitting element to the outside of the light emitting device. On the other hand, in consideration of the ease of operation when mounting a plurality of semiconductor elements on the support substrate, the recess for accommodating the protection element is provided in the support substrate so as to have an opening in the same surface as the surface on which the light emitting element is mounted. It is desirable to have.

However, when the protective element is placed in the recess formed below the mounting surface of the light emitting element, part of the light emitted from the cross-sectional direction of the light emitting element placed above is trapped in the recess. As a result, the extraction efficiency of light to the outside of the light emitting device is lowered. In addition, when the body color of the protective element absorbs light from the light emitting element, the trapped light is absorbed by the protective element, so that the output of the light emitting device is significantly reduced. In addition, it is not practical to prevent the intrusion of light into the recess by embedding the recess for accommodating the protection element with the light reflective filler, since it takes time and material cost.

Accordingly, an object of the present invention is to provide a light emitting device having excellent reliability and optical characteristics, and also to provide a method of manufacturing such a light emitting device at low cost.

In order to achieve the above object, the light-emitting device which concerns on this invention is equipped with the light emitting element, the package which arrange | positions the light emitting element, the electrode provided in the package, and the conductive wire which connects the electrode of the said light emitting element, The said package A light emitting device comprising: a support having a mounting portion for arranging the light emitting element and a concave portion accommodating a semiconductor element separate from the light emitting element; and a light transmitting member disposed on the support; An element and an opening of the recess are covered, and the package has a cavity in the recess. It is preferable that the said cavity is provided between the bottom face of the translucent member which covers the said opening part, and the upper face of the semiconductor element accommodated in the said recessed part.

In addition, a method of manufacturing a light emitting device includes a light emitting element, a package in which the light emitting element is disposed, and a conductive wire connecting the electrode provided to the package and the electrode of the light emitting element, wherein the package includes the light emitting element. A method of manufacturing a light emitting device, comprising: a support having at least a translucent member to cover, a mounting portion on which the light emitting element is disposed, and a concave portion accommodating a semiconductor element separate from the light emitting element; A first step of forming a support having an opening to be recessed, a second step of placing an upper surface of the semiconductor element below an upper surface of a mounting portion of the light emitting element, and storing the semiconductor element in the recess; A third step of arranging the element and the conductive wire and at least the light emitting element while forming a cavity in the recess; And a fourth step of disposing a translucent member covering the opening of the concave portion on the support.

The light emitting device arranges a protective element on the bottom of the recess lower than the mounting surface of the light emitting element, and has a cavity in the recess in which the protective element is housed. Here, a difference in refractive index occurs between the light transmissive member covering the light emitting element and the cavity. Light emitted from the light emitting element or light from the phosphor is reflected at those interfaces having different refractive indices and extracted to the outside of the light emitting device. That is, the present invention can improve the light extraction efficiency of the light emitting device as compared with the prior art by using the cavity provided in the concave portion. In addition, the unevenness in the light distribution chromaticity of the light emitting device is also reduced by extracting the light from the light emitting device without losing the light in the recess.

The light emitting device prevents the intrusion of light into the recess by providing a cavity by arranging the light transmitting member in the support in the recess where the protection element is stored. For this reason, the present invention provides a protection element, as compared with embedding a light reflective filler in a recess, or providing a reflection member separate from the light transmitting element covering the light emitting element between the light emitting element and the protection element. It is possible to obtain a low cost light emitting device having a small light loss due to the concave portion accommodating the light emitting device.

In addition, the manufacturing method of the light emitting device has a light loss in the concave portion as compared with embedding a light reflecting filler in the concave portion accommodating the protective element or providing a reflective member between the light emitting element and the protective element. Small light emitting devices can be formed relatively simply and inexpensively. The light emitting device manufacturing method of the present invention also has a step of forming a translucent member covering the light emitting element on the support, whereby air bubbles remain in a recess having a lower surface than the mounting surface of the light emitting element. It can be done simultaneously. Therefore, the light emitting device with little light loss in the recess can be manufactured relatively simply and inexpensively.

The cavity formed in the package recess of the light emitting device is preferably provided between the bottom face of the translucent member covering the opening and the top surface of the semiconductor element housed in the recess.

Moreover, it is preferable that the translucent member has a convex projecting part toward the bottom face of the said recessed part from the opening part of the said recessed part.

Moreover, it is preferable that the said recessed part is provided in the area | region fitted in the some mounting part of the said light emitting element, and the said support body is equipped with the external connection electrode, respectively just underneath the said mounting part.

Moreover, it is preferable that the similarity ratio of the external shape which looked at the opening part of the said recessed part in plan view, and the external shape which looked at the semiconductor element accommodated in the said recessed part in plan view is 1.0-2.5.

Further, the fourth step preferably includes a step of continuously supplying the material of the light transmitting member in a direction substantially parallel to the mounting surface of the light emitting element.

In addition, it is preferable that the viscosity of the material of the translucent member is adjusted so that bubbles remain in the concave portion in the fourth step based on the size of the concave portion with respect to the size of the semiconductor element.

In addition, it is preferable that the material of the translucent member contains at least one or more resins selected from silicone resins or epoxy resins, and the resins contain particulate phosphors.

Moreover, it is preferable that the viscosity of the material of the said translucent member is 200 Pa * s or more and 500 Pa * s or less.

Moreover, the similarity ratio of the external shape which looked at the opening part of the said recessed part in plan view, and the semiconductor element accommodated in the said recessed part is 1.0 to 2.5, and the depth of the said recessed part is accommodated in the said recessed part. The ratio of the heights of the semiconductor elements thus obtained is preferably 1.0 to 2.14.

And a light emitting element, a package on which the light emitting element is disposed, and a conductive wire connecting the electrodes provided on the package and the electrodes of the light emitting element, and the package is separate from the mounting portion and the light emitting element on which the light emitting element is disposed. MEANS TO SOLVE THE PROBLEM In order to reduce the loss of the light by the said recessed part, this inventor examined variously about the light emitting device provided with the support body which has the recessed part which accommodates a semiconductor element, and the light-transmitting member which coat | covers a light emitting element at least. As a result, the problem was solved by making the opening part of the recess which accommodates a semiconductor element separate from a light emitting element cover a part of the translucent member which coat | covers a light emitting element, and to make the package which provided the cavity in the recess part. The present invention has a cavity in the recess, whereby a refractive index difference occurs between the cavity and the light transmitting member covering the opening of the recess. Then, light is reflected and emitted from the light emitting device using those interface surfaces having different refractive indices as reflecting surfaces. As described above, since the present invention does not lose light in the recess, the light extraction efficiency of the light emitting device is improved compared with the prior art.

The cavity in the package of the light emitting device is preferably provided between the bottom face of the translucent member covering the opening of the recess and the top face of the semiconductor element housed in the recess. This is because the light propagating through the light transmitting member can be suppressed from being absorbed by the semiconductor element housed in the recess.

It is preferable that the light transmissive member has a protrusion at the opening of the recess, and the protrusion has a convex bottom face toward the bottom of the recess. This is because the projecting portion increases the effect of reflecting light toward the translucent member on the upper surface of the support without causing the light to enter the recess. In addition, it is preferable that a cavity is provided between the light transmissive member or the bottom face of the projecting portion and the top face of the semiconductor element housed in the recess. By forming a gap between the bottom face of the translucent member and the top face of the semiconductor element, the light outside the recess does not reach the semiconductor element, so that the loss caused by the semiconductor element accommodated in the recess may occur. Disappear.

It is preferable that the similarity ratio of the external appearance which looked at the opening part of the recessed part in plan view, and the external view which looked at the semiconductor element accommodated in the recessed part is 1.0 to 2.5. This is because if the size of the opening of the recess is too large with respect to the size of the semiconductor element, more light is intended to penetrate into the recess. In addition, if the size of the opening is too small with respect to the size of the semiconductor element, the workability of the process of disposing the semiconductor element in the concave portion is lowered, and thus a light emitting device having good mass productivity cannot be obtained.

A light emitting element and a package on which the light emitting element is disposed; a conductive wire connecting the electrode provided to the package and an electrode of the light emitting element; a light transmissive member on which the package at least covers the light emitting element; And a method for manufacturing a light emitting device having a support having a recess for accommodating a semiconductor element separate from the light emitting device, the present inventors manufacture a light emitting device with a low light loss in the recess relatively simply and inexpensively. In order to do this, various studies were made. As a result, the method of manufacturing a light emitting device includes a first step of forming a recessed portion having an opening in a mounting surface of a light emitting element on a support, and an upper surface of the semiconductor element disposed below the mounting surface of the light emitting element, thereby providing a semiconductor element in the recessed portion. And a third step of arranging the light emitting element and the conductive wire, and a fourth step of arranging the light transmitting element covering at least the opening of the light emitting element and the recess in the support while forming a cavity in the recess. By this feature, the problem has been solved. In other words, the manufacturing method of the light emitting device does not require the step of embedding the light reflective filler in the recess for accommodating the semiconductor element, so that the light emitting device with low light loss in the recess is relatively simple and inexpensively manufactured. can do.

In addition, the manufacturing method of a light emitting device can simplify the process of manufacturing a light emitting device by performing formation of a translucent member to a support body, and formation of a cavity in the same process. According to this method, the fourth step of forming the light transmitting member includes a step of continuously supplying the material of the light transmitting member in a direction substantially parallel to the mounting surface of the light emitting element. That is, the light transmissive member is formed by pouring a material of the translucent translucent member in a direction substantially parallel to the mounting surface on which the light emitting element is disposed, and molding the material into a mold to cure it. On the other hand, "approximately parallel" shall include the range of about +/- 10 degrees with respect to the surface parallel to the mounting surface of a light emitting element as an allowable range.

The viscosity of the material of the light transmissive member is adjusted so that the cavity is formed as the remaining of the bubbles in the fourth step based on the size of the semiconductor element and the concave portion accommodated. For example, the size and depth of the concave portion may include a top view of the concave opening, a similar ratio of the outline of the semiconductor element housed in the concave, of 1.0 to 2.5, a depth D of the concave, It is preferable to make ratio (D / H) with height H of the semiconductor element accommodated in the recessed part from 1.0 to 2.14. This is to minimize the size of the bubbles, which does not lead to a decrease in the reliability of the light emitting device.

Moreover, it is preferable that the viscosity of the material of a translucent member is 200 Pa * s or more and 500 Pa * s or less. If the viscosity is low, no cavity is formed in the recess in which the semiconductor element is stored, and the recess is filled with the material of the light transmitting member. On the other hand, it is because the workability of the process of arrange | positioning the material of a translucent member will fall when a viscosity is too high.

In addition, by adjusting the viscosity of the material of the light transmitting member, the material is convex in a convex shape from the opening of the recess toward the bottom of the recess, and the protrusion of the light transmitting member is formed in the opening of the recess. The light emitting device may also be provided with a cavity provided between the convex bottom face of the projection of the light transmitting member and the top face of the semiconductor element housed in the recess.

It is preferable that the material of a translucent member contains at least 1 sort (s) of resin chosen from a silicone resin or an epoxy resin, and the resin contained particle fluorescent substance. By adjusting the content of the particulate phosphor in the resin, the viscosity of the resin containing the particulate phosphor can be easily adjusted, and it is easy to form a cavity for the light emitting device containing the phosphor in the light transmitting member. to be.

Further objects and features of the present invention will become more apparent from the following detailed description taken in conjunction with the accompanying drawings.

As shown in Fig. 1, the light emitting device 100 of the present embodiment has two main light emitting elements 101a and 101b, a support 108 on which the light emitting elements are disposed, and the same as the light emitting element. A separate semiconductor element 102 mounted on the support, a first conductive wire 105 connecting the electrode of the semiconductor element 102 to the electrode of the support, and a second conductivity connecting the electrode of the light emitting element to the electrode of the support. A wire 106.

In this embodiment, the semiconductor element 102 mounted on the support separately from the light emitting element is a protective element (for example, a zener diode) for protecting the light emitting element from overvoltage. The support body 108 has a concave portion 103 that is concave from the upper surface side on which the light emitting elements 101a and 101b are disposed to the bottom surface side, and the protection element is housed in the concave portion 103.

2, 3, and 5, the translucent member 107 is disposed on the upper surface of the support body 108 so as to close the opening of the recess 103, and the translucent member 107 is provided. At least the light emitting elements 101a and 101b disposed on the upper surface side and the second conductive wire 106 connected thereto are covered. Here, the recessed part 103 has the cavity between the translucent member arrange | positioned at the upper surface of the support body 108, and the recessed inner wall. Here, the term "cavity" in the present specification is a bubble formed in the interior of the light transmissive member 107 or between the light transmissive member 107 and the support, and includes air or other gas, or the structure of the light transmissive member 107. It is a gap formed between the lower surface and the recess. Such a cavity is arranged in a direction in which light travels from the outside of the semiconductor element disposed in the recess, in particular from above the semiconductor element, that is, outside the opening. The shape and number of cavities are not limited. For example, a large number of round cavities may be dispersed in the recess. By disperse | distributing a cavity, the effect similar to when the diffusing agent is contained in a translucent member can be acquired. That is, the penetration of light into the bottom direction of the recess is suppressed by the light diffusing to the light transmitting member. In addition, the position of a cavity is not limited between the bottom face of the translucent member in an opening part, and the top face of a semiconductor element. What is necessary is just a cavity formed between the translucent member which covers the opening part of a recess, and the inner wall of a recess, For example, the cavity may be provided between the side surface of the semiconductor element accommodated in the recess, and the inner wall surface of a recess.

As shown in FIGS. 2 and 3, the light emitting device 100 of this embodiment includes a lower surface of the translucent member 107 covering the opening of the recess 103, an upper surface of the semiconductor element 102, and a recess. The cavity 111 is provided between the inner walls of the part 103. At the interface between the cavity 111 formed in the opening of the recess 103 and the light transmissive member 107, light incident on the interface can be reflected on the light transmissive member 107 side. Therefore, the light emitting device 100 of this embodiment can extract light to the outside of the light emitting device without invading the light into the recess 103.

Such a cavity 111 can be integrally formed in the process of forming the translucent member 107 in the support body 108. For example, it can be formed by printing the material of the translucent member 107 after arranging a blank plate or a mask on the upper surface of the support body 108. This method is a method of covering each member disposed on the upper surface of the support 108 by disposing while supplying material continuously in a direction substantially parallel to the upper surface of the support. Therefore, it is necessary to arrange the material of the translucent member 107 while forming the cavity 111 in the recess 103 without the recess 103 being completely filled with the material of the translucent member 107. . The material of the translucent member 107 of this embodiment is previously adjusted to a predetermined viscosity in consideration of the size of the opening of the recess 103 and the ease of operation in the step of arranging the material. For example, in order to make a light emitting device containing a phosphor in the light transmitting member, the phosphor is a YAG-based phosphor, and the material of the light transmitting member is mixed as a silicone resin. The viscosity of the material thus produced is measured by a B-type viscometer to be adjusted to 200 Pa · s or more and 500 Pa · s or less.

On the other hand, in the manufacturing method of this embodiment, when the material of a translucent member is arrange | positioned at the upper surface of a support body, the thing by which the cavity by the remainder of a bubble is easily formed in the recessed part from the upper surface of the support body in which the light emitting element was mounted is used. That is, a protective element is accommodated in the concave recess, and bubbles are left around the protective element to form a cavity. Therefore, according to the manufacturing method of the light emitting device of this embodiment, the step of arranging the material of the translucent member covering the light emitting element on the upper surface of the support, and the bubbles remaining in the concave portion having the lower surface lower than the mounting surface of the light emitting element Processes for forming cavities can be combined. The light emitting device of this embodiment can produce a light emitting device having a high light extraction efficiency relatively simply and inexpensively as compared to embedding a light reflecting filler in a recess in which a protection element is stored.

In the light emitting device of this embodiment, as shown in FIG. 6, the protrusion 112 of the light transmitting member 107 can be provided in the opening of the recess 103. This projecting part 112 is a part of the translucent member 107 which has a convex surface which protruded convexly toward the bottom face of the recessed part. The cavity 111 may also be provided between the convex bottom face of the protrusion 112 and the top face of the semiconductor element 102 accommodated in the recess. The protrusion 112 of such a translucent member can be formed by forming a shape using the fluidity of the translucent member having a viscosity to some extent and then curing it. That is, after adjusting the viscosity of the material of the translucent member, the fluid material is connected in a convex shape from the opening of the recess toward the bottom of the recess, and cured when the desired shape is obtained. In addition, by adjusting the material viscosity of the light transmitting member appropriately, the degree of connection in the bottom direction of the recess can be adjusted. Thereby, the cavity can be formed or the magnitude | size can be adjusted between the convex bottom face in the protrusion part, and the upper face of the semiconductor element accommodated in the recessed part.

Alternatively, in the cavity 111 in this embodiment, the light-transmissive member 107 formed in a separate step in advance is disposed on the upper surface of the support 108, and a recess in which the semiconductor element is disposed as part of the light-transmissive member 107. It can also be provided by blocking the negative opening. That is, in the translucent member 107 disposed on the upper surface of the support 108 to cover the light emitting element, a cavity is formed between the lower surface of the translucent member 107 blocking the opening of the concave portion 103 and the concave portion 103. It is also possible to form the light and reflect the light by the lower surface of the light transmitting member to extract it to the outside. On the other hand, in consideration of the improvement in productivity, as described above, it is preferable to use the manufacturing method in which the cavity is formed simultaneously with the formation of the light transmitting element covering the light emitting element or the conductive wire.

In the present specification, the upper surface of each member refers to the upper surface of the side on which the light emitting element is mounted, and the surface facing the upper surface of the respective surfaces forming the outer shape of the support. Moreover, the surface between them which connects an upper surface and a lower surface is made into a side surface.

The light emitting device 100 of this embodiment includes a pair of positive and negative external connection electrodes 110a and 110c. When the light emitting device 100 is soldered to a wiring board (not shown), the solder is sandwiched between the solders. The external connection electrodes 110a and 110c are connected to the electrodes of the wiring board. At this time, the external connection electrodes 110a and 110c can also be a heat radiation path from the support to the wiring board via the solder.

Therefore, the heat dissipation path can be shortened when the mounting portion of the light emitting element is disposed almost immediately above the external connection electrode provided on the bottom surface side of the support, thereby improving heat dissipation of the light emitting device. When the mounting portions of the plurality of light emitting elements 101a and 101b are provided on the support 108, as in the light emitting device 100 of the present embodiment, the support is arranged from the upper surface direction to arrange the plurality of light emitting elements, respectively. It is preferable to set it as the support body which has the opening part of the recessed part for accommodating a semiconductor element separate from a light emitting element in the area | region inserted in the some mounting part 104b. In addition, it is preferable that a pair of positive and negative external connection electrodes 110a and 110c of the light emitting device 100 extends to just below the mounting portions 104b of the light emitting elements 101a and 101b. That is, the external shape of the external connection electrodes 110a and 110c disposed on the rear surface of the support body 108 constituting the light emitting device 100 shows the layout pattern external shape of the mounting portion 104b. When projected vertically from the back side (shown in FIG. 4) to the back side (shown in FIG. 4), the shape preferably includes at least a part of the projection shape, and more preferably has a shape including all of the projection shapes. .

For example, in the light emitting device of the present embodiment, as shown in FIG. 4, a pair of positive and negative external connection electrodes 110a and 110c disposed on the bottom surface of the support is provided from both ends of the support 108. It extends to just under the mounting part 104b of 101a, 101b. Due to the arrangement relationship between the external connection electrode and the mounting portion of the light emitting element, when a plurality of light emitting elements are mounted on the support, the recesses or the cavities provided in the recesses are connected to the wiring board via the external connection electrode from the mounting portion of the light emitting element. Heat dissipation to the side is not disturbed. Therefore, the heat dissipation of the light emitting device is not lowered, and the output of the light emitting device can be improved.

A pair of positive and negative electrodes may be provided in the recess in which the semiconductor element is stored, and electrical connection between the electrodes and the semiconductor element may be performed in the recess. The connection method between the electrode in the recess and the electrode of the semiconductor element is, for example, a pair of positive and negative electrodes exposed at the bottom of the recess and the electrodes of the semiconductor element are brought into contact with each other to be bonded by bumps, or the upper surface of the semiconductor element. Can be connected to the electrode on the bottom of the concave portion with a conductive wire. It is preferable that the whole of the conductive wire connected to each electrode of the semiconductor element and the electrode in the recess is housed in the recess. In other words, the top of the conductive wire is preferably below the upper surface of the support on which the light emitting element is disposed. As a result, the translucent member 107 hardly affects the conductive wires, and the degradation of the reliability of the light emitting device due to the metal fatigue of the conductive wires can be eliminated.

As in the light emitting device of the present embodiment, in the configuration in which the light emitting element has a recess between the light emitting element and the light emitting element, the amount of light increases in the region sandwiched by the light emitting element, and when they penetrate into the recess, the loss of light also increases. . In order to reduce the loss of light in the light emitting device having such a configuration, the present invention can be particularly preferably applied. Below, each structural member in the light-emitting device of this form is explained in full detail.

[Light emitting device]

In this embodiment, a semiconductor device in which a light emitting element and a protection element are disposed on a support will be described. However, the present invention is not limited to this embodiment. One can be used as a semiconductor device mounted thereon. There may be one light emitting element, a protection element accommodated in a recess, or another semiconductor element, and a plurality may be sufficient as it. The light emitting color of the light emitting element may be any one of red, green, and blue, or a combination of these colors.

In the light emitting device of this embodiment, when a light emitting device having a fluorescent material is used, a semiconductor light emitting device having an active layer capable of emitting a wavelength capable of exciting the fluorescent material is preferable. Examples of such semiconductor light emitting devices include various semiconductors such as ZnSe and GaN, but nitride semiconductors capable of emitting short wavelengths capable of efficiently exciting fluorescent materials (In x Al y Ga 1-xy N, 0≤X, 0≤Y And X + Y ≦ 1) can be mentioned suitably. Various light emission wavelengths can be selected depending on the material of the semiconductor layer and its blending degree.

In the case where a nitride semiconductor is used as the material of the light emitting device, materials such as sapphire, spinel, SiC, Si, ZnO, GaN and the like are suitably used for the semiconductor substrate for laminating the semiconductor. It is preferable to use a sapphire substrate in order to form a nitride crystal with good crystallinity with good productivity. A nitride semiconductor can be formed on the sapphire substrate by MOCVD method or the like. In addition, the semiconductor substrate can also be removed after laminating the semiconductor layer.

In a light emitting device that emits white mixed color light, the light emission wavelength of the light emitting element is preferably 400 nm or more and 530 nm or less, in consideration of the complementary color relationship with the emission wavelength from the fluorescent material, deterioration of the sealing resin, and the like. 490 nm or less is more preferable. In order to improve the excitation and luminous efficiency of a light emitting element and a fluorescent substance, respectively, 450 nm or more and 475 nm or less are more preferable.

It is preferable to select a gallium aluminum arsenide semiconductor or an aluminum indium gallium phosphorus semiconductor as a material of a light emitting device that emits red light.

On the other hand, in order to obtain a full color display device, it is preferable to combine a light emitting element having a red emission wavelength of 610 nm to 700 nm, a green system having a light emission wavelength of 495 nm to 565 nm, and a blue emission wavelength of 430 nm to 490 nm.

After fixing a light emitting element to a support body, each electrode of a light emitting element and the conductor wiring of a support body are each connected with a conductive wire. Here, the bonding member for fixing the light emitting element is not particularly limited, and the conductive member is made of an insulating adhesive such as an epoxy resin, a process material containing Au and Sn, a solder such as a low melting point metal, and a resin containing a conductive material. Paste, glass, or the like. Here, the conductive material contained in the conductive paste is preferably Au, Sn or Ag, and more preferably a light emitting device excellent in heat dissipation can be obtained by using an Ag paste having an Ag content of 80% to 90%. On the other hand, the semiconductor element with an electrode on the bottom side can be adhere | attached to a support body by the electrically conductive paste containing metal materials, such as silver, gold, and palladium.

In the case of a light emitting element formed by laminating a nitride semiconductor on a light-transmissive sapphire substrate, for example, an epoxy resin, silicon, or the like can be cited as the bonding member. At this time, a metal material of silver or aluminum may be disposed on the bottom surface of the light emitting element (that is, the surface opposite to the surface on which the nitride semiconductor in the sapphire substrate is laminated, which will be the same in the following paragraph). For example, a metal layer can be formed by depositing or sputtering a metal material of silver or aluminum on the bottom surface of the light emitting element. As a result, the light reflectance at the bottom of the light emitting device is improved, and when the bonding member is made of a resin material, deterioration of the resin due to light and heat from the light emitting device is suppressed, and the light extraction efficiency of the light emitting device is improved. . In addition, a metal layer made of silver or aluminum and a process layer made of Au or Sn are laminated in this order from the bottom side of the light emitting element. This improves the light reflectance between the bottom of the light emitting element and the process layer. In addition, when the process material includes a material that absorbs at least part of the light from the light emitting element, the loss of light at the bottom side of the light emitting element is reduced, so that the light extraction efficiency of the light emitting device is improved.

The light emitting element is fixed to the light emitting element mounting portion provided on the upper surface of the support described later by the bonding member. In this embodiment, the light emitting element is fixed on the metal member provided on the upper surface of the support. However, the present invention is not limited to this embodiment, and the light emitting element may be mounted on the insulating member constituting the support.

[Conductive wire]

The conductive wire is required to have good ohmicity, mechanical connectivity, electrical conductivity and thermal conductivity with an electrode of the light emitting element. As the thermal conductivity 0.01cal / (s) (cm 2 ) (℃ / cm) or higher is preferable, and more preferably 0.5cal / (s) (cm 2 ) (℃ / cm) or more. In consideration of workability and the like, the diameter of the conductive wire is preferably φ10 μm or more and φ45 μm or less. When the fluorescent material is contained in the light transmitting member, the conductive wire is easily disconnected at the interface between the portion containing the fluorescent substance and the portion not containing the fluorescent substance. Therefore, 25 micrometers or more are more preferable, and, as for the diameter of an electroconductive wire, 35 micrometers or less are more preferable from a viewpoint of ensuring the light emitting area of a light emitting element, or the ease of handling. Specific examples of such conductive wires include metals such as gold, copper, platinum, aluminum, and conductive wires using these alloys.

[Support]

The package of this form is comprised from the support body which arrange | positions a semiconductor element and an electrode, and the translucent member which coat | covers a semiconductor element. First, a plate-shaped support body in which conductor wiring is applied to an insulating substrate can be suitably used as the support body in the light emitting device of this embodiment. The light emitting element is disposed in the mounting portion provided on the main surface of the plate-shaped support. When the support body has no side wall surrounding the lateral direction of the light emitting element, it can be extracted to the outside without losing the light emitted from the lateral direction of the light emitting element. The insulating substrate of this embodiment is a rectangular parallelepiped whose upper surface is substantially rectangular, and has a recessed part concave from an upper surface side to a bottom surface side in the substantially center part of an upper surface. On the upper surface of the insulating substrate, two pairs of metal members and a pair of positive and negative electrodes for mounting a light emitting element are provided. The recess is provided between these electrodes and the metal material. Moreover, the bottom surface of the recessed part is provided with the electrode electrically connected with the electrode provided in the upper surface of the insulated substrate. On the other hand, the shape and position of the electrode and the metal member provided on the insulating substrate are appropriately adjusted in consideration of the size and shape of the semiconductor element in which the metal member is disposed as the mounting portion, the point of easy pulling of the conductive wire, and the like.

The insulating substrate which comprises the support body of this form has a recessed concave part from the upper surface side to the bottom side in the area | region outside the area | region where a light emitting element is mounted in the upper surface on which the semiconductor element is mounted. In the recess, for example, a protective element is stored as a semiconductor element separate from the light emitting element. The concave portion in the present embodiment has a substantially square shape in which the opening is viewed in plan, but is not limited thereto, and the concave portion can have a shape and a size that match the size, number, or shape of the semiconductor element accommodated in the concave portion. Similarly, the depth of the recess can also be appropriately adjusted by the height of the semiconductor element to be housed and the connection system of the electrodes in the recess. As shown in FIG. 1, the recess 103 is disposed substantially in the center of the support 108 between the mounting portion 104b of the first light emitting element 101a and the mounting portion 104b of the second light emitting element 101b. It is desirable to install. Accordingly, the light emitting device having the recessed portion at the edge of the support (for example, the support is arranged in the order of the mounting portion of the first light emitting element, the mounting portion of the second light emitting element, and the recessed portion in the longitudinal direction of the support, in the longitudinal direction of the support). The light emitting device of this embodiment can reduce the influence on the light distribution property by providing a recess in the support.

For example, when forming a cavity at the same time as forming a translucent member, the size and depth of a recessed part are similar to the external view which looked at the opening part of the recessed part, and the external view which looked at the semiconductor element accommodated in the recessed part in plan view. The ratio is preferably 1.0 to 2.5, and the ratio between the depth of the recess and the height of the semiconductor element housed in the recess is preferably 1.0 to 2.14. If the size of the concave portion becomes too large with respect to the size of the semiconductor element, the bubbles forming the cavity also increase. This is because such bubbles may expand due to heat generation of the light emitting element, resulting in a decrease in reliability and optical characteristics of the light emitting device.

As a material of an insulating board | substrate, the glass epoxy board | substrate in which a glass component is contained in an epoxy resin, and the board | substrate using ceramics can be used suitably.

When a high contrast required for the light-emitting device, by which contains a pigment such as Cr 2 O 3, MnO 2, Fe 2 O 3 to the base material of the insulating substrate, it is preferable that the insulating substrate with a dark line. Or in order to provide a high light reflectivity to an insulating board | substrate, it is preferable to contain white pigments, such as titanium dioxide.

In particular, when high heat resistance and high light resistance are desired, it is preferable to use ceramics as the base material of the insulating substrate. As the main material of ceramics, alumina, aluminum nitride, mullite and the like are preferable. A sintering aid etc. are added to this main material, and a sintering substrate can be obtained by sintering. For example, 90-96 weight% of raw material powders are alumina, and 4-10 weight% of clay, talc, magnesia, carsia, silica, etc. are added as a sintering aid, and ceramics sintered in the temperature range of 1500-1700 degreeC, 40 to 60% by weight of the raw material powder is alumina, and 60 to 40% by weight of borosilicate glass, cordierite, goto olivine, mullite, etc. are added and ceramics sintered at a temperature range of 800 to 1200 ° C. have. Such a ceramic substrate can take various shapes in the green sheet step before baking. Therefore, the insulating substrate which has the recessed part of this form can be formed easily. Moreover, conductor wiring of various pattern shapes can be performed in the green sheet stage before baking. For example, by screen printing a tungsten-containing paste material, a base layer of a metal material for conductor wiring or a mounting portion of a semiconductor element can be formed. In the base layer, after firing the ceramic material, the metal material on the outermost surface is disposed by plating or sputtering made of silver, gold, or aluminum. The outermost surface is preferably coated with a metal material having high reflectance with respect to light from the light emitting element.

[Translucent member]

The material of the light transmissive member is not particularly limited, and for example, a light transmissive resin having excellent weather resistance, such as a silicone resin, an epoxy resin, a urea resin, a fluororesin, and a hybrid resin containing at least one or more of these resins can be used. . In addition, the light transmitting member is not limited to an organic substance, and an inorganic substance having excellent light resistance such as glass and silica gel may be used. In addition, the translucent member of this embodiment can add all the members according to a use, such as a viscosity extender, a light-diffusion agent, a pigment, and a fluorescent substance. For example, a colorant corresponding to the light emission color of the light emitting device may be added. Examples of the light diffusing agent include barium titanate, titanium oxide, aluminum oxide, silicon dioxide, calcium carbonate, and a mixture containing at least one of them. In addition, the lens can be provided by making the light exit surface side of the light transmitting member into a desired shape. Specifically, it can be set as a flat plate shape, a convex lens shape, a concave lens shape, or an elliptical shape and the shape which combined more than one from the light emission observation surface.

[Fluorescent material]

The light emitting device of this embodiment can contain a fluorescent substance in the light transmitting member. As an example of such a fluorescent substance, there is a fluorescent substance containing a rare earth element described below.

Specifically, a garnet (garnet) type having at least one element selected from the group of Y, Lu, Sc, La, Gd, Tb, and Sm, and at least one element selected from the group of Al, Ga, and In. Fluorescent material; In particular, the aluminum garnet-based phosphor includes at least one element selected from Al and Y, Lu, Sc, La, Gd, Tb, Eu, Ga, In and Sm, and at least one element selected from rare earth elements. It is a revived phosphor, and is a phosphor which is excited by visible light or ultraviolet rays emitted from the light emitting element and emits light. For example, yttrium aluminum oxide phosphor (YAG phosphor), Tb 2.95 Ce 0.05 Al 5 O 12 , Y 2.90 Ce 0.05 Tb 0.05 Al 5 O 12 , Y 2.94 Ce 0.05 Pr 0.01 Al 5 O 12 , Y 2.90 Ce 0.05 Pr 0.05 Al 5 O 12 etc. are mentioned. Among them, two or more kinds of yttrium-aluminum oxide-based phosphors containing Y and also being activated with Ce or Pr and different in composition are used in the present embodiment.

Further, the nitride-based phosphor includes N and at least one element selected from Be, Mg, Ca, Sr, Ba, and Zn, and at least one selected from C, Si, Ge, Sn, Ti, Zr, and Hf. A phosphor containing one element and revived with at least one element selected from rare earth elements. For example, a nitride-based phosphor, (Sr 0 .97 Eu 0 .03 ) 2 Si 5 N 8, (Ca 0.985 Eu 0.015) 2 Si 5 N 8, (Sr 0 .679 Ca 0 .291 Eu 0 .03) 2 Si 5 N 8 etc. are mentioned.

Hereinafter, embodiments related to the present invention will be described in detail. In addition, of course, this invention is not limited only to the Example shown below.

Example 1

1 is a top view schematically showing the light emitting device 100 according to the present embodiment. FIG. 2 is a cross-sectional view schematically showing a cross section when the light emitting device 100 of FIG. 1 is cut in the XX direction, and FIG. 3 is a cutaway view of the light emitting device 100 shown in FIG. 1 in the YY direction. It is sectional drawing which shows typically the cross section of time. 4 is a bottom view schematically showing the light emitting device 100 of the present embodiment. 5 is a perspective view schematically showing the light emitting device 100 of the present embodiment.

As shown in Fig. 1, the light emitting device 100 according to the present embodiment has a flat support body 108 having a first electrode 104a and a second electrode 104c for supplying electric power to a light emitting element. ) And a plurality of light emitting elements 101a and 101b arranged with the metal member 104b provided on the upper surface of the support 108 as a mounting portion, and the first light emitting element 101a and the second light emitting element 101b. The second conductive wire 106 connecting the electrode, the first electrode 104a and the second electrode 104c, and the light transmitting member 107 covering the light emitting elements 101a, 101b and the second conductive wire 106. It is provided.

The light emitting element of this embodiment is two LED chips 101a and 101b which emit blue light made of a gallium nitride compound semiconductor. These LED chips have a rectangular shape of 500 mu m x 290 mu m (vertical x horizontal) when the top surface is viewed in plan view, and a process material including Au and Sn as a material is disposed on the bottom face side. These LED chips are respectively bonded by the process material on the mounting part which makes silver provided in the upper surface of a support body into the outermost surface.

A support body is plated with nickel, gold, and silver in order on the insulating substrate which consists of ceramics using tungsten as a base layer. By arrange | positioning these metal materials, each electrode and the metal member 104b are formed. In the support body 108, a recess 103 having an opening portion is provided on an upper surface of the insulating substrate in an area sandwiched between two mounting portions of the LED chip 101a and the LED chip 101b. The concave portion 103 houses a protection element 102 that protects the LED chips 101a and 101b from destruction due to overvoltage. In the light emitting device of the present embodiment, the cavity 111 is disposed between the lower surface of the translucent member 107 covering the opening of the recess 103 and the upper surface of the protection element 102 accommodated in the recess 103. Have

The protection element 102 of this embodiment is a zener diode having electrodes of different polarities on the upper and lower surfaces. The protective element 102 is bonded to the bottom of the recess 103 by using silver paste as a conductive adhesive, and the electrode on the bottom side thereof is connected to the conductor wiring exposed from the bottom of the recess 103 with the conductive adhesive interposed therebetween. It is. The electrode on the upper surface of the protective element 102 is connected to the first electrode 104a provided on the upper surface of the support with the first conductive wire 105 interposed therebetween.

As shown in Fig. 1, the support 108 of the present embodiment includes a pair of positive and negative electrodes connected to the light emitting element with the second conductive wire 106 interposed therebetween on the upper surface where the light emitting element is disposed. Electrode 104a and second electrode 104c] and a metal member 104b insulated from these electrodes and provided on the upper surface of the same support. The two LED chips 101a and 101b are mounted on the metal member 104b provided separately from the electrode. Thereby, since a heat dissipation path can be provided in a support body independently of the arrangement pattern of the conductor wiring connected to an electrode, it can be set as the light emitting device with high heat dissipation.

As shown in FIG. 4, in the light emitting device 100 of the present embodiment, a pair of side surfaces of the light emitting device 100 facing each other in the longitudinal direction of the support 108 are cut from the rear direction thereof, and the support 108 is cut from the inner surface of the cut portion. The 1st external connection electrode 110a and the 2nd external connection electrode 110c extend and extend over the center part. Since these 1st external connection electrode 110a and the 2nd external connection electrode 110c are connected to each semiconductor element, the 1st electrode 104a, the 2nd electrode 104c, which are arrange | positioned on the upper surface of the support body 108, and It is conductive with an electrode disposed on the bottom of the recess 103. That is, the 1st external connection electrode 110a and the 2nd external connection electrode 110c are electrically connected to the 1st electrode 104a and the 2nd electrode 104c, respectively, by the conductor wiring embedded in the support body. have. When the light emitting device 100 is soldered to an external wiring board, the first external connecting electrode 110a and the second external connecting electrode 110c are connected to the wiring board with the solder interposed therebetween.

As shown in Fig. 2 and Fig. 3, in the cavity 111 of the present embodiment, bubbles remain in the recess 103 in the step of forming the light transmitting member 107 of the light emitting device 100 of the present embodiment. It is formed by. In other words, each semiconductor element is placed on the support 108 to connect each electrode with a conductive wire, and then a silicone resin containing a YAG-based phosphor is printed by covering the light emitting element, the conductive wire, and the opening of the recess. The manufacturing method of the light emitting device of this embodiment is generally as follows.

First, a plurality of LED chips are arranged on an assembly substrate of a support body 108 made of ceramics as an insulating substrate, and then, the protection element 103 is housed in a recess and electrically connected by a conductive wire or the like. On the other hand, the protective element 103 is bonded to the conductor wiring arranged on the bottom surface of the recess with silver paste as an adhesive, and the electrode on the bottom surface of the protective element 103 is electrically connected to the conductor wiring with the silver paste interposed therebetween. do.

Next, the silicone resin containing the YAG fluorescent substance is arranged in a straight line along the arrangement of the LED chips so that the plurality of LED chips are covered with the conductive wires and the openings of the recesses. At this time, the viscosity of the silicone resin containing the YAG fluorescent material is 300 Pa · s. In addition, the protection element of this embodiment has a square shape of 240 µm x 240 µm in the top view of the upper surface, and has a height of 0.14 mm when disposed on the bottom of the concave portion. When the protective element of this size is accommodated in the concave portion, the outer dimension of the opening of the concave portion is preferably a square having a side of 0.24 mm or more and 0.60 mm or less, and the depth from the upper surface of the opening to the bottom of the concave portion is 0.15 mm. It is preferable to set it as 0.30 mm or more. In this embodiment, the outer dimension of the opening of the recess is a square of 0.50 mm x 0.50 mm, and the depth is 0.15 mm. After curing the silicone resin, the light transmitting device and the insulating substrate are cut by dicing and separated into a predetermined size to obtain the light emitting device 100 of the present embodiment.

On the other hand, the marks (marks formed in a straight or L-shape) 109 respectively formed at four corners or sides of a quadrangle forming the outer shape of the upper surface of the support 108 are a pair of positive and negative pairs provided in the light emitting device 100. In addition to being used as a label for identifying the polarity of the external connection electrodes 110a and 110c, it can also be used as a target representing a dicing line when dicing an aggregated substrate into individual chips.

[Industry availability]

INDUSTRIAL APPLICABILITY The present invention can be used for a light source for illumination, a light source for various indicators, a light source for a vehicle, a light source for a display, a light source for a backlight of a liquid crystal, and the like.

While various preferred embodiments of the invention have been shown and described, it is to be understood that the invention is not limited to these specifically disclosed embodiments, but is merely intended to illustrate the invention and is not intended to limit the scope thereof. Is apparent to those skilled in the art. Also, all suitable changes and modifications are to be construed as falling within the scope of the invention as defined by the appended claims.

The present invention is based on Japanese Patent Application No. 2007-188709, filed on July 19, 2007 and Japanese Patent Application No. 2007-335793, filed on December 27, 2007. It is included in the specification.

1 is a top view schematically showing a light emitting device according to an embodiment of the present invention.

FIG. 2 is a cross-sectional view schematically showing a cross section of the light emitting device in the II-II direction shown in FIG. 1.

3 is a cross-sectional view schematically showing a cross section of the light emitting device in the III-III direction shown in FIG.

4 is a bottom view schematically showing a light emitting device according to an embodiment of the present invention.

5 is a perspective view schematically showing a light emitting device according to an embodiment of the present invention.

6 is a cross-sectional view schematically showing a cross section of a light emitting device according to another embodiment of the present invention.

[Description of the code]

100, 200: light emitting device 101a, 101b: light emitting device

102: semiconductor device 103: recessed portion

104a: first electrode 104b: metal member

104c: second electrode 105: first conductive wire

106: second conductive wire 107: translucent member

108: support 109: mark

110a: first external connection electrode 110c: second external connection electrode

111: cavity 112: protrusion

Claims (11)

A light emitting element having an electrode; It is configured to include a package in which the light emitting device is disposed and the electrode is installed, The package is: A support having a mounting portion for arranging the light emitting element and a recess for accommodating a semiconductor element separate from the light emitting element; A translucent member disposed on the support; And, It further comprises a conductive wire for connecting the electrode installed in the package and the electrode of the light emitting device, The translucent member covers at least the light emitting element and the opening of the concave portion, The package has a light emitting device having a cavity in the recess. The light emitting device according to claim 1, wherein the cavity is provided between a bottom face of the translucent member covering the opening of the recess and an upper face of the semiconductor element housed in the recess. 2. The light emitting device according to claim 1, wherein the light transmitting member has a convex protrusion from the opening of the recess toward the bottom of the recess. The light emitting device according to claim 1, wherein the concave portion is provided in an area fitted into a plurality of mounting portions of the light emitting element, and the support body is provided with an external connection electrode substantially under the mounting portion, respectively. The light emitting device according to claim 1, wherein the similarity ratio between the contour of the concave portion in the plan view and the contour of the semiconductor element housed in the concave portion in the plan view is 1.0 to 2.5. And a light emitting element, a package in which the light emitting element is disposed, a conductive wire connecting the electrode provided on the package and the electrode of the light emitting element, wherein the package includes a light transmitting member that covers at least the light emitting element; A method of manufacturing a light emitting device, comprising: a support having a mounting portion on which a light emitting element is disposed and a recess for accommodating a semiconductor element separate from the light emitting element; A first step of forming a support having a recess opening to an upper surface on which the light emitting element is mounted; A second step of placing the upper surface of the semiconductor element below the upper surface of the mounting portion of the light emitting element, and storing the semiconductor element in the recess; A third step of arranging the light emitting element and the conductive wire; And a fourth step of disposing at least one of the light emitting element and the opening of the concave portion on the support while forming a cavity in the concave portion. The method of manufacturing a light emitting device according to claim 6, wherein the fourth step includes a step of continuously supplying the material of the light transmitting member in a direction substantially parallel to the upper surface on which the light emitting element is mounted. 8. The method of manufacturing a light emitting device according to claim 7, wherein the viscosity of the material of the light transmitting member is adjusted so that bubbles remain in the concave portion in the fourth step based on the size of the concave portion relative to the semiconductor element. The method of manufacturing a light emitting device according to claim 7, wherein the material of the light transmitting member comprises at least one resin selected from a silicone resin or an epoxy resin, and the resin contains a particulate phosphor. The manufacturing method of light-emitting device of Claim 8 whose viscosity of the material of the said translucent member is 200 Pa * s or more and 500 Pa * s or less. 7. The aspect ratio according to claim 6, wherein the similarity between the contour of the concave portion in the plan view and the contour of the semiconductor element accommodated in the concave portion is 1.0 to 2.5, and the depth of the concave portion and the concave portion are accommodated. A method of manufacturing a light emitting device, wherein the ratio of the heights of the semiconductor elements is 1.0 to 2.14.
KR1020080070027A 2007-07-19 2008-07-18 Light emitting device and method of manufacturing the same KR100958509B1 (en)

Applications Claiming Priority (4)

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JP2007188709 2007-07-19
JPJP-P-2007-00188709 2007-07-19
JPJP-P-2007-00335793 2007-12-27
JP2007335793A JP4241870B2 (en) 2007-07-19 2007-12-27 Light emitting device and manufacturing method thereof

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160134042A (en) * 2015-05-14 2016-11-23 (주)포인트엔지니어링 Light engine for luminous element
KR20170028175A (en) * 2015-09-03 2017-03-13 엘지이노텍 주식회사 light emitting device package

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010028049A (en) * 2008-07-24 2010-02-04 Kyocera Corp Light-emitting device and lighting system
JP5351723B2 (en) 2009-05-22 2013-11-27 シャープ株式会社 Light source device and display device
JP4621799B1 (en) 2009-05-22 2011-01-26 シャープ株式会社 Light reflecting sheet, light source device and display device
JP4519944B1 (en) 2009-05-22 2010-08-04 シャープ株式会社 Light source device and display device
CN102428316A (en) * 2009-05-22 2012-04-25 夏普株式会社 Light Reflecting Sheet, Light Source Device, And Display Device
US9433046B2 (en) 2011-01-21 2016-08-30 Once Innovations, Inc. Driving circuitry for LED lighting with reduced total harmonic distortion
CN102263187A (en) 2010-05-31 2011-11-30 展晶科技(深圳)有限公司 Light emitting diode packaging structure and manufacture method thereof
TWI449223B (en) * 2010-11-02 2014-08-11 Hon Hai Prec Ind Co Ltd Light emitting diode lead frame
JP5583051B2 (en) * 2011-02-23 2014-09-03 京セラ株式会社 Light emitting element mounting substrate and light emitting device
US8507328B2 (en) * 2011-05-27 2013-08-13 Tsmc Solid State Lighting Ltd. Systems and methods providing semiconductor light emitters
KR101823506B1 (en) * 2011-06-29 2018-01-30 엘지이노텍 주식회사 Light emitting device and light unit having thereof
CN104066319B (en) 2011-12-14 2017-09-05 万斯创新公司 aquaculture lighting device and method
US9374985B2 (en) 2011-12-14 2016-06-28 Once Innovations, Inc. Method of manufacturing of a light emitting system with adjustable watt equivalence
CN103999210B (en) * 2011-12-22 2016-11-02 京瓷株式会社 Circuit board and electronic installation
US20140001948A1 (en) * 2012-06-29 2014-01-02 Nitto Denko Corporation Reflecting layer-phosphor layer-covered led, producing method thereof, led device, and producing method thereof
US9554562B2 (en) 2014-08-07 2017-01-31 Once Innovations, Inc. Lighting system and control for experimenting in aquaculture
KR102522798B1 (en) * 2016-02-26 2023-04-18 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 Light emitting device package, light emitting module and display device having the same
US11044895B2 (en) * 2016-05-11 2021-06-29 Signify North America Corporation System and method for promoting survival rate in larvae
JP6680302B2 (en) * 2018-01-10 2020-04-15 日亜化学工業株式会社 Light emitting device
CN110081323B (en) * 2018-05-23 2021-08-31 浙江山蒲照明电器有限公司 LED filament and LED bulb
US11152553B2 (en) 2019-01-15 2021-10-19 Seoul Viosys Co., Ltd. Light emitting device package and display device having the same
EP3706262B1 (en) * 2019-02-15 2022-01-26 Nichia Corporation Method of manufacturing light emitting device, light emitting device, and base member

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11112036A (en) 1997-09-30 1999-04-23 Sharp Corp Surface mounting semiconductor device
JP2004207363A (en) * 2002-12-24 2004-07-22 Kyocera Corp Package for housing light emitting element and light emitting device
JP4307090B2 (en) * 2003-01-27 2009-08-05 京セラ株式会社 Light emitting element storage package and light emitting device
JP2004363185A (en) 2003-06-02 2004-12-24 Stanley Electric Co Ltd Optical communication module

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160134042A (en) * 2015-05-14 2016-11-23 (주)포인트엔지니어링 Light engine for luminous element
KR20170028175A (en) * 2015-09-03 2017-03-13 엘지이노텍 주식회사 light emitting device package

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KR100958509B1 (en) 2010-05-17
JP2009044116A (en) 2009-02-26
HK1127161A1 (en) 2009-09-18
CN101350346B (en) 2010-06-02
JP4241870B2 (en) 2009-03-18
TWI357671B (en) 2012-02-01
CN101350346A (en) 2009-01-21
TW200921949A (en) 2009-05-16

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