TW200921949A - Light emitting device and method of manufacturing the same - Google Patents

Light emitting device and method of manufacturing the same Download PDF

Info

Publication number
TW200921949A
TW200921949A TW97125901A TW97125901A TW200921949A TW 200921949 A TW200921949 A TW 200921949A TW 97125901 A TW97125901 A TW 97125901A TW 97125901 A TW97125901 A TW 97125901A TW 200921949 A TW200921949 A TW 200921949A
Authority
TW
Taiwan
Prior art keywords
light
emitting element
concave portion
emitting device
emitting
Prior art date
Application number
TW97125901A
Other languages
Chinese (zh)
Other versions
TWI357671B (en
Inventor
Takuya Noichi
Original Assignee
Nichia Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nichia Corp filed Critical Nichia Corp
Publication of TW200921949A publication Critical patent/TW200921949A/en
Application granted granted Critical
Publication of TWI357671B publication Critical patent/TWI357671B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

Landscapes

  • Led Device Packages (AREA)
  • Led Devices (AREA)

Abstract

The light emitting device 100 includes a light emitting element 101, a package for arranging the light emitting element 101, and an electrically conductive wire 106 for connecting an electrode disposed on the package and an electrode of the light emitting element. The package includes a support member 108 having a mounting portion to arrange the light emitting element 101 and defining a recess 103 to house a semiconductor element 102 which is different than the light emitting element, and a light transmissive member 107 covering at least the light emitting element 101. The package defines a hollow portion 111 between the light transmissive member 107 covering the opening of the recess 103 and an inner wall defining the recess 103.

Description

200921949 九、發明說明 【發明所屬之技術領域】 本發明關於用於照明器具、顯示器、攜帶型電話的背 光、動畫照明輔助光源、其他光源等的發光裝置及其製造 方法。 【先前技術】 利用像發光二極體那樣的發光元件的發光裝置小型且 電力效率優良地發出鮮豔顏色的光。另外，這樣的發光元 件不同於電燈泡等’不用擔心燈泡壞掉等。而且，具有初 期驅動特性出色、耐振動和開關燈的反復操作的特徵。由 於具有這樣出色的特性，因此利用了發光二極體（led) 、雷射二極體（LD )等發光元件的發光裝置被利用作爲照 明器具、攜帶型電話的背光等光源。 在這樣的發光裝置中，爲了保護發光元件免受過電壓 的破壞，在發光裝置中搭載有稽納二極體等保護元件。這 樣的保護元件在搭載了發光元件的支撐基板上，與發光元 件鄰近地配置，且與該發光元件電連接。 例如，在（日本）特開平1 1 — 54804號公報中所公開 的發光裝置，具備：設置了極性不同的第1電極及第2電 極的絕緣性基板、在第1電極的上表面側配置的LED晶 片、在第2電極上配置的保護元件（例如，稽納二極體） 、以及被覆LED晶片及與該LED晶片連接的導電性導線 的封裝樹脂。而且，LED晶片的一個電極與第1電極、另 200921949 一個電極與第2電極分別用導線連接。另一方面，保護元 件的上表面側的電極與第1電極用導電性導線連接，下表 面側的電極通過導電性黏接劑與第2電極連接。 在這樣的發光裝置中，由於來自發光元件的光被保護 元件吸收，或被保護元件遮光，因此作爲發光裝置整體， 光取出效率下降。因此，如果在保護元件之下形成凹部， 在該凹部內配置保護元件，使保護元件的高度低於發光元 件的高度，那麼能夠減少保護元件造成的光的遮斷。 或者，像（日本）特開2007— 150229號公報中所公 開的發光裝置那樣，通過在發光元件與保護元件之間配置 與被覆發光元件的透光性構件不同的反射構件，使來自發 光元件的光向發光裝置之外反射，由此保護元件不妨礙從 發光元件向發光裝置之外被取出的光的通路。而且，考慮 在支撐基板上安裝多個半導體元件時的操作簡易性等，用 於容納保護元件的凹部乃設置在支撐基板上，以使在與安 裝發光元件的面相同的面上具有開口部較佳。 但是，若在比發光元件的搭載面還低地形成的凹部內 載放保護元件，則從在上方載放的發光元件的端面方向發 出的光的一部分被封入凹部內。由此，向發光裝置的外部 的光的取出效率下降。而且，由於在保護元件的體色吸收 來自發光元件的光的情況下，被封入的光因保護元件而被 吸收，因此發光裝置的輸出明顯下降。另外，如果用光反 射性的塡充物埋設容納保護元件的凹部，由此阻止向凹部 內的光的侵入，那麼因花費工夫或材料費用而不現實。 -5- 200921949 【發明內容】 因此，本發明的目的在於提供一種具有出色 和光學特性的發光裝置，另外，目的在於提供一 製造這樣的發光裝置的方法。 爲了達到以上目的，本發明關於的發光裝置 發光元件、配置該發光元件的封裝、及連接設置 上的電極和前述發光元件的電極的導電性導線， 具備：支撐體、及在該支撐體上配置的透光性構 撐體具有配置前述發光元件的搭載部及容納與前 件不同的半導體元件的凹部；前述透光性構件被 前述發光元件和前述凹部的開口部，前述封裝在 具有空洞。前述空洞設置在被覆前述開口部的透 的底面和容納在前述凹部的半導體元件的上表面 〇 另外，一種發光裝置的製造方法，該發光裝 發光元件、配置該發光元件的封裝、及連接設置 上的電極和前述發光元件的電極的導電性導線； 具備：被覆至少前述發光元件的透光性構件、及 該支撐體具有配置前述發光元件的搭載部及容納 光元件不同的半導體元件的凹部；該發光裝置的 ，包括以下工程：第一工程，形成具有在搭載前 件的上表面開口的凹部的支撐體；第二工程，在 元件的搭載部的上表面之下配置前述半導體元件 的可靠性 種低廉地 ，具備： 在該封裝 前述封裝 件，該支 述發光元 覆著至少 前述凹部 光性構件 之間爲佳 置具備： 在該封裝 前述封裝 支撐體， 與前述發 製造方法 述發光元 前述發光 的上表面 -6- 200921949 ’在目U述凹部容納前述半導體元件；第三工程，配置前述 發光兀件及前述導電性導線；第四工程，在前述凹部內形 成空洞’並在前述支撐體上配置被覆至少前述發光元件及 前述凹部的開口部的透光性構件。 通過以下的詳細描述並結合附圖，會對本發明的前述 和進一步的實物及其特點更清楚。 【實施方式】 發光裝置在比發光元件的安裝面還低的凹部的底面配 置保護元件’進而，在容納了保護元件的凹部內具有空洞 。在此，在被覆發光元件的透光性構件和空洞之間產生折 射率差。於是，從發光元件放射的光、或來自螢光體的光 在折射率不同的這些邊界面被反射向發光裝置的外部取出 。即，本發明通過利用設置在凹部內的空洞，與現有技術 比較，能夠使發光裝置的光取出效率提高。另外，這些光 在凹部沒有損失地從發光裝置被取出，從而發光裝置的配 光色度的偏差也變小。 發光裝置在容納了保護元件的凹部內設置通過在支撐 體上配置透光性構件而形成的空洞，由此阻止向該凹部內 的光的侵入。因此，與在凹部內埋設光反射性的塡充物的 發光裝置、或在發光元件和保護元件之間設置與被覆發光 元件的透光性構件不同的反射構件的發光裝置等比較，本 發明能夠作爲由容納保護元件的凹部所造成的光損失少且 結構比較簡單的低廉的發光裝置。 200921949 另外，發光裝置的製造方法，與在容納保護元件的凹 部內埋設光反射性的塡充物的發光裝置、或在發光元件和 保護元件之間設置反射構件的發光裝置比較，能夠比較簡 單且低廉地形成在凹部中光損失少的發光裝置。進而，本 發明中的發光裝置的製造方法，通過在支撐體上形成被覆 發光元件的透光性構件的工程，也可以同時在具有比發光 元件的安裝面還低的底面的凹部使氣泡殘存。因此，能夠 比較簡單且低廉地製造在凹部中光損失少的發光裝置。 在發光裝置的封裝凹部形成的空洞’設置在被覆前述 開口部的透光性構件的底面和在前述凹部容納的半導體元 件的上表面之間爲佳。 另外’透光性構件具有從前述凹部的開口部向前述凹 部的底面的凸狀的突出部爲佳。 進而’前述凹部設置在被前述發光元件的多個搭載部 夾著的區域’前述支撐體在前述搭載部的略正下方分別具 備外部連接電極爲佳。 而且’俯視前述凹部的開口部的外形、與俯視容納在 前述凹部的半導體元件的外形的相似比是從1 ·〇到2.5爲 佳。 而且’前述第四工程包括以相對前述發光元件的搭載 面略平行的方向’連續地供給前述透光性構件的材料的工 程爲佳。 而且，前述透光性構件的材料的黏度根據與前述半導 體元件的大小對應的前述凹部的大小，在前述第四工程中 -8 - 200921949 調整，使氣泡在前述凹部殘存爲佳。 而且’前述透光性構件的材料是包含從矽酮樹脂或環 氧樹脂中選擇的至少一種以上的樹脂、且在該樹脂中含有 粒子狀螢光體的材料爲佳。 而且，前述透光性構件的材料的黏度在200Pa· s以 上、500Pa· s以下爲佳。 而且，俯視前述凹部的開口部的外形、與俯視容納在 前述凹部的半導體元件的外形的相似比是從1 · 0到2.5， 前述凹部的深度、與容納在前述凹部的半導體元件的高度 的比是從1 . 〇到2.1 4爲佳。 對於具備發光元件、配置該發光元件的封裝、及連接 設置在該封裝上的電極和發光元件的電極的導電性導線的 發光裝置’其中封裝具備支撐體、及至少被覆發光元件的 透光性構件，該支撐體具有配置發光元件的搭載部及容納 與發光元件不同的半導體元件的凹部，爲了使由前述凹部 所造成的光的損失減小，本發明人進行了各種硏究。其結 果，通過將容納與發光元件不同的半導體元件的凹部的開 口部用被覆發光元件的透光性構件的一部分來被覆，製成 在該凹部設置有空洞的封裝，從而得以解決問題。本發明 通過在凹部具有空洞，從而在被覆凹部的開口部的透光性 構件和空洞之間產生折射率差。於是’以這些折射率不同 的邊界面作爲反射面，光被反射且從發光裝置出射。這樣 ，本發明在凹部中不使光損失，所以與現有技術比較，發 光裝置的光取出效率提高。 -9- 200921949 進而’發光裝置的封裝中的空洞，設置在對凹部的開 口部進行被覆的透光性構件的底面和容納在凹部的半導體 元件的上表面之間爲佳。這是因爲能夠抑制通過透光性構 件傳播的光被容納在凹部內的半導體元件吸收。 透光性構件在凹部的開口部具有突出部，該突出部具 有向凹部的底面的凸狀的底面爲佳。這是因爲利用這樣的 突出部’不使光入射到凹部內，提高向支撐體上表面的透 光性構件的方向反射的效果。另外，在透光性構件或其突 出部的底面、和容納在凹部的半導體元件的上表面之間設 置空洞爲佳。通過在透光性構件的底面和半導體元件的上 表面之間，設置因空洞產生的間隔，由此凹部外的光將不 會照射到半導體元件的方向，不因容納在凹部內的半導體 元件而受到損失。 俯視凹部的開口部的外形、與俯視容納在凹部的半導 體元件的外形的相似比是從1 · 0到2.5爲佳。這是因爲若 相對於半導體元件的大小，凹部的開口部的大小過大，則 侵入到凹部內的光變多。另外，若相對於半導體元件的大 小，開口部的大小過小，則在凹部內配置半導體元件的工 程的操作性降低，所以不能製成量產性好的發光裝置。 對於發光裝置的製造方法，該發光裝置具備：發光元 件、配置該發光元件的封裝、以及連接設置在該封裝上的 電極和前述發光元件的電極的導電性導線，封裝具備：被 覆至少發光元件的透光性構件、及支撐體，該支撐體具有 配置發光元件的搭載部及容納與發光元件不同的半導體元 -10- 200921949 件的凹部，爲了比較簡單且低廉地製造在凹部中光損失少 的發光裝置’本發明人進行了各種硏究。其結果，發光裝 置的製造方法通過具有特徵在於，包括以下工程：第一工 程，在支撐體上形成在發光元件的搭載面上具有開口部的 凹部；第二工程，比發光元件的搭載面還低地配置半導體 元件的上表面，在凹部容納半導體元件；第三工程，配置 發光元件及導電性導線；第四工程，在凹部內形成空洞， 並且在支撐體上配置被覆至少發光元件及凹部的開口部的 透光性構件’從而得以解決問題。即，因爲發光裝置的製 造方法無須在容納半導體元件的凹部內埋設光反射性的塡 充物’所以能夠比較簡單且低廉地製造在凹部中的光損失 少的發光裝置。 另外’發光裝置的製造方法通過在同一工程中進行對 支撐體的透光性構件的形成和空洞的形成，能夠簡略製造 發光裝置的工程。在利用這樣的方法時，形成透光性構件 的第四工程包括以相對發光元件的搭載面略平行的方向， 連續地供給透光性構件的材料的工程。即，以相對于配置 了發光兀件的搭載面略平行的方向，流入具有流動性的透 光性構件的材料，且按型成型該材料並使其固化，由此形 成透光性構件。而且，“略平行”是對平行于發光元件的 ί合載面的面，以± 1 〇。左右的範圍作爲容許範圍。 透光性構件的材料的黏度根據所容納的半導體元件和 凹郤的大小，在第四工程中調整’使氣泡殘存而形成空洞 。例如’凹邰的大小及深度，乃俯視凹部的開口部的外形 -11 - 200921949 、與俯視容納在凹部的半導體元件的外形的相似比是從 1 . 0到2.5，且凹部的深度D、與容納在凹部的半導體元件 的咼度Η的比（D/H )是從！ _ 〇到2 ·丨4爲佳。這是爲了將 氣泡的大小設爲與發光裝置的可靠性的下降無關所需要的 最小限度。 進而’透光性構件的材料的黏度在2 0 0 p a . s以上、 5 0 0 P a · s以下爲佳。追是因爲若黏度低，則在容納有半導 體元件的凹部不形成空洞，而凹部由透光性構件的材料塡 滿了。另一方面，若黏度過高，則配置透光性構件的材料 的工程的操作性下降。 另外’通過調整透光性構件的材料的黏度，從而使材 料從凹部的開口部向凹部的底面凸狀地延伸，在凹部的開 口部形成透光性構件的突出部。於是，能夠製成在透光性 構件的突出部中的凸狀的底面、和容納在凹部的半導體元 件的上表面之間設置了空洞的發光裝置。 透光性構件的材料是包含從矽酮樹脂或環氧樹脂中選 擇的至少一種以上的樹脂、且在該樹脂中含有粒子狀螢光 體的材料爲佳。這是因爲通過調整樹脂中的粒子狀螢光體 的含有率’能夠容易地調整含有粒子狀螢光體的樹脂的黏 度，對於在透光性構件中包含螢光體的發光裝置，能夠容 易地使空洞形成。 通過以下的詳細描述並結合附圖’會對本發明的前述 和以下的實物及其特點更清楚。 圖1是模式性顯示本發明的一個實施例關於的發光裝 -12- 200921949 置的頂視圖。 圖2是模式性顯示圖1中所示的沿Π — Π方向的發光 裝置的剖面的剖面圖。 圖3是模式性顯示圖1中所示的沿瓜-瓜方向的發光 裝置的剖面的剖面圖。 圖4是模式性顯示本發明的一個實施例中的發光裝置 的底面圖。 圖5是模式性顯示本發明的一個實施例中的發光裝置 的立體圖。 圖6是模式性顯示本發明的另一個實施例關於的發光 裝置的剖面的剖面圖。 如圖1所示，本方式的發光裝置100，作爲主要的構 成構件，具備：兩個發光元件101a、101b，配置這些發光 元件的支撐體108，與發光元件搭載在同一個支撐體上的 其他半導體元件102，以及將半導體元件102的電極連接 到支撐體的電極的第一導電性導線1 〇 5，將發光元件的電 極連接到支撐體的電極的第二導電性導線1 0 6。 在本方式中，與發光元件分開搭載在支撐體上的半導 體元件1 02是用於保護發光元件免受過電壓的保護元件（ 例如’稽納二極體）。支撐體1 〇 8具有從配置了發光元件 1 0 1 a、1 0 1 b的上表面側向底面側凹陷的凹部丨〇 3，保護元 件被容納在該凹部1 0 3內。 進而’在支撐體108的上表面，如圖2、3、5所示， 配置透光性構件1 07以堵住凹部1 03的開口部，該透光性 -13- 200921949 構件1 0 7至少被覆配置在上表面側的發光元件1 0 1 a、1 0 1 b 以及與其連接的第二導電性導線106。在此，凹部103在 配置於支撐體1 〇8的上表面的透光性構件和凹部內壁之間 具有空洞。在此，本說明書中的“空洞”是在透光性構件 107的內部或在透光性構件107和支撐體之間形成、且含 有空氣或其他氣體的氣泡，或者是在透光性構件107的下 表面和凹部之間形成的間隙。這樣的空洞在配置於凹部的 半導體元件的外側、特別是半導體元件的上側，即光從開 口部的外側行進的方位上配置。空洞的形狀、數量不受限 制。例如，也可以是許多球狀的空洞在凹部內分散的狀態 。通過分散地配置空洞，可得到與使透光性構件中含有擴 散劑時一樣的效果。即，在透光性構件中光被擴散，由此 抑制光向凹部的底面方向的侵入。另外，空洞的位置不限 定在開口部的透光性構件的底面和半導體元件的上表面之 間。在被覆凹部的開口部的透光性構件和凹部的內壁之間 形成空洞即可，例如，也可以在容納在凹部的半導體元件 的側面和凹部的內壁面之間設置空洞。 本方式中的發光裝置100，如圖2及圖3所示，具有 在對凹部1 03的開口部進行被覆的透光性構件1 07的下表 面、半導體元件1 0 2的上表面和凹部1 0 3的內壁之間設置 的空洞1 1 1。在凹部1 0 3的開口部形成的空洞1 1 1和透光 性構件1 07的邊界面上，能夠使入射到該邊界面的光向透 光性構件1 0 7側反射。因此，本方式的發光裝置1 0 0能夠 不使光侵入到凹部103的內部，而向發光裝置的外部取出 -14- 200921949 這樣的空洞1 1 1能夠在支撐體1 0 8上形成透光性 1 〇 7的工程中一體地形成。例如，能夠在支撐體1 0 8 表面配置孔版、掩膜後，通過印刷透光性構件1 0 7的 而形成。該方法是以略平行於支撐體的上表面的方向 地供給材料並且配置，從而被覆在支撐體1 08的上表 置的各構件的方法。因此，凹部1 0 3不是完全由透光 件107的材料塡充，而是需要在凹部103形成空洞1 且配置透光性構件1 0 7的材料。考慮凹部1 〇 3的開口 大小、配置材料的工程的操作簡易性等，本方式的透 構件107的材料被預先調整爲規定的黏度。例如，爲 成在透光性構件中含有螢光體的發光裝置，以YAG 光體爲螢光體，以矽酮樹脂爲透光性構件的材料，將 混合。這樣製作的材料的黏度利用Β型黏度計測量， 整在200Pa· s以上、500Pa. s以下。 而且，本方式的製造方法利用了這一點，即在將 性構件的材料配置在支撐體上表面時，在從搭載了發 件的支撐體上表面凹陷的凹部中容易因氣泡的殘存而 空洞。即’在該凹陷的凹部容納保護元件，使氣泡在 護元件的周圍殘存，由此形成空洞。因此，根據本方 的發光裝置的製造方法，可以合倂在支撐體上表面配 覆發光元件的透光性構件的工程、和在具有比發光元 安裝面低的底面的凹部利用氣泡的殘存使空洞形成的 。本方式的發光裝置與在容納保護元件的凹部埋設光 構件 的上 材料 連續 面配 性構 η並 部的 光性 了製 系螢 兩者 被調 透光 光元 形成 該保 式中 置被 件的 工程 反射 -15- 200921949 性的塡充物的器件比較，是能夠比較簡單且低廉地製造的 光取出效率高的發光裝置。 另外’本方式的發光裝置，如圖6所示，能夠在凹部 1 03的開口部設置透光性構件1 07的突出部1 1 2。該突出 部1 1 2是在透光性構件1 0 7中，具有向凹部的底面的方向 凸狀突出的凸面的部位。進而，也能夠在突出部112的凸 狀的底面、和容納在凹部的半導體元件1 0 2的上表面之間 具有空洞111。這樣的透光性構件的突出部1 1 2能夠利用 具有某種黏度的透光性構件的流動性來調整形狀，之後使 其固化而形成。即，在調整透光性構件的材料的黏度後， 使流動性的材料從凹部的開口部向凹部的底面凸狀地延伸 ，當成爲所希望的形狀時使其固化。另外，通過適當調整 透光性構件的材料的黏度，也能夠調整向凹部的底面方向 的延伸的程度。由此，能夠在突出部中的凸狀的底面、和 容納在凹部的半導體元件的上表面之間形成空洞，或調整 其大小。 或者，本方式中的空洞111也能夠通過在支撐體108 的上表面配置預先在其他工程中形成的透光性構件1 0 7， 用該透光性構件1 07的一部分，將配置有半導體元件的凹 部的開口部堵住，由此來設置。即，在爲被覆發光元件而 配置在支撐體1 0 8的上表面的透光性構件1 0 7之中，在將 凹部1 0 3的開口部堵住的透光性構件1 〇 7的下表面和凹部 1 03之間形成空洞，能夠利用透光性構件的下表面使光反 射而向外部取出。而且，若考慮提高生產性，則如先前說 -16- 200921949 明的那樣，在形成被覆發光元件和導電性導線的透光性構 件的同時，也形成空洞的製造方法爲佳。 在本說明書中，各構件的上表面是形成支撐體的外觀 形狀的各面之中，搭載發光元件一側的面爲上表面，與該 上表面相對的面爲底面。另外，連接上表面和底面的、它 們之間的面爲側面。 本方式的發光裝置100具備正負成對的外部連接電極 1 10a、1 10c，當發光裝置1〇〇由焊錫安裝在佈線基板（未 圖示）上時，通過該焊錫，外部連接電極1 l〇a、1 10c與 佈線基板的電極連接。這時，外部連接電極1 1 0 a、1 1 0 c 也能夠作爲從支撐體經由焊錫向佈線基板的散熱通路。 因此，若在設置在支撐體的底面側的外部連接電極的 略緊上方配置發光元件的搭載部，則能夠縮短散熱通路， 因此提高發光裝置的散熱性。而且，如本方式的發光裝置 1〇〇，在將多個發光元件l〇la、101b的搭載部設置在支撐 體108上時，從支撐體的上表面方向看，這樣的支撐體， 在被分別配置多個發光元件的多個搭載部1 04b夾著的區 域上，具有用於容納與發光元件不同的半導體元件的凹部 的開口部爲佳。而且，發光裝置1 00的正負成對的外部連 接電極110a、110C延伸設置到發光元件101a、101b的各 搭載部l〇4b的正下方爲佳。即，在構成發光裝置100的 支撐體108的背面配置的外部連接電極110a、110c的外 形，從支撐體108的上表面（圖1所示）向背面（圖4所 示）垂直投影搭載部1 〇4b的配置圖形外形時，是包括該 -17- 200921949 投影形狀的至少一部分的形狀爲佳’具有包括前述投影形 狀的全部的形狀則更佳。 例如，本方式的發光裝置，如圖4所示’配置在支撐 體的底面的正負成對的外部連接電極11〇a、110c，從支撐 體108的兩端部延伸到發光元件l〇la、101b的搭載部 1 〇4b的正下方。利用這樣的外部連接電極和發光元件的搭 載部的配置關係，在將多個發光元件搭載在支撐體上時， 凹部或設置在凹部的空洞不妨礙從發光元件的搭載部經由 外部連接電極向佈線基板的散熱。因此，不使發光裝置的 散熱性降低，能夠使發光裝置的輸出提高。 在容納半導體元件的凹部內設置正負成對的電極，這 些電極和半導體元件的電連接也能夠在凹部內進行。凹部 內的電極和半導體元件的電極的連接方式，例如，能夠使 在凹部的底面露出的正負成對的電極和半導體元件的電極 相互面對並利用凸塊等使其接合，或利用導電性導線將半 導體元件的上表面的電極連接到凹部底面的電極。使半導 體元件的各電極和凹部內的電極連接的導電性導線全部容 納在凹部內爲佳。即，導電性導線的最頂部比配置了發光 元件的支撐體的上表面還低爲佳。由此，透光性構件1 0 7 受導電性導線影響變少，能夠消除因導電性導線的金屬疲 勞造成的發光裝置的可靠性的下降。 如本方式的發光裝置，在發光元件和與其不同的發光 元件之間具有凹部這樣的結構，在被發光元件夾著的區域 ，光量變多，若這些光侵入到凹部內，則光的損失也變多 -18- 200921949 。爲了使在那樣結構的發光裝置中光的損失減少，可特別 較佳且適用本發明。以下，對本方式的發光裝置中的各構 成構件進行詳細描述。 (發光元件） 在本方式中’對在支撐體上配置了發光元件及保護元 件的半導體器件進行說明，但並不限定於這樣的方式，也 可以是搭載有受光元件、其他保護元件（電阻、電晶體或 電容器等）、或使它們至少兩種以上組合而成的元件的半 導體器件。發光元件、容納在凹部內的保護元件或其他半 導體元件可以是一個’也可以是多個。發光元件的發光顏 色可以是紅色系、綠色系或藍色系的任意一種，或是使這 些顏色組合而成的顏色。 本方式中的發光元件，作爲具備螢光物質的發光裝置 時，具有活性層的半導體發光元件爲佳，該活性層能夠發 出可激勵該螢光物質的波長的光。作爲這樣的半導體發光 元件，可列舉ZnSe、GaN等各種半導體，也適宜列舉可 發出能夠效率良好地激勵螢光物質的短波長的光的氮化物 半導體（InxAWGaj.x.YN、O^X、0SY、χ+YSi)。利 用半導體層的材料或其混晶度能夠選擇各種發光波長。 使用氮化物半導體作爲發光元件的材料時，在用於使 半導體層疊的半導體用基板上可適宜使用藍寶石、尖晶石 、SiC、Si、ZnO、GaN等材料。爲了量產性好地形成結晶 性良好的氮化物半導體，使用藍寶石基板爲佳。在該藍寶 -19- 200921949 石基板上可使用mocvd法等形成氮化物半導體。另外， 半導體用基板也能夠在層疊半導體層後去除。 在作爲使白色系的混色光發光的發光裝置時，考慮與 來自螢光物質的發光波長的補色關係或密封樹脂的劣化等 ，發光元件的發光波長在400nm以上、530nm以下爲佳， 更佳爲在420nm以上、490nm以下。爲了分別使發光元件 和螢光物質的激勵、發光效率進一步提高，進而在450nm 以上、475nm以下爲佳。 作爲發紅色系的光的發光元件的材料，鎵鋁砷系半導 體或者鋁銦鎵磷系半導體爲佳。 而且，爲了製成彩色顯示器件，組合紅色系的發光波 長從610nm到700nm、綠色系從495nm到565nm、藍色系 的發光波長從430 nm到490 nm的發光元件爲佳。 在支撐體上固定發光元件後，用導電性導線分別連接 發光元件的各電極和支撐體的導體佈線。其中，用於固定 發光元件的接合構件沒有特別限定，能夠使用環氧樹脂等 絕緣性黏接劑’或含有Au和Sn的共晶材、低熔點金屬等 釺料、含有樹脂的導電性膠黏劑或玻璃等，該樹脂含有導 電性材料。在此，在導電性膠黏劑中含有的導電性材料， Au、Sn或Ag爲佳，更佳乃若使用Ag的含有量是80%〜 90 %的Ag膠黏劑，則可得到散熱性也出色的發光裝置。 而且，在底面側具有電極的半導體元件，可利用含有銀、 金、鈀等金屬材料的導電性膠黏劑，黏接在支撐體上。 對於在透光性的藍寶石基板上使氮化物半導體層疊而 -20- 200921949 形成的發光元件的情況’作爲接合構件，可列舉例如環氧 樹脂、矽酮等。這時，在發光元件的底面（即，前述藍寶 石基板中與層疊了氮化物半導體的面相反側的面。以下， 在該段落中相同。）也可以配置銀或鋁的金屬材料。例如 ，在發光元件的底面通過蒸鍍或濺射銀或鋁的金屬材料， 能夠成膜金屬層。由此，發光元件的底面的光反射率提高 ’因此，在以樹脂材料作爲接合構件時，抑制因來自發光 元件的光或熱造成的樹脂的劣化，發光裝置的光取出效率 提高。進而，從發光元件的底面側，依次層疊以銀或鋁爲 材料的金屬層、還有以Au或S η爲材料的共晶層。由此， 在發光元件的底面和共晶層之間光反射率提高。另外，當 共晶材包含將來自發光元件的光的至少一部分吸收的材料 時’因爲在發光元件的底面側光的損失減少，所以發光裝 置的光取出效率提高。 發光元件通過接合構件固定在設置於下述的支撐體的 上表面的發光元件搭載部上。在本方式中，發光元件固定 在設置於支撐體的上表面的金屬構件上。但是，並不限於 胃樣的方式’發光元件也可以安裝在構成支撐體的絕緣構 件上。 (導電性導線） 導電性導線要求是與發光元件的電極的歐姆性、機械 連接性、導電性及熱傳導性好的導線。熱傳導率在 O.Olcal/ ( s ) ( cm2 ) ( 〇C /cm )以上爲佳，更佳爲在 -21 - 200921949 0.5cal/ ( s ) ( cm2 ) ( t： /cm )以上 寺’導電性導線的直徑在φ ΙΟμηι以 。在使透光性構件中含有螢光物質_ 部位和未含有螢光物質的部位的介面 線。因此’更佳爲導電性導線的直徑 保發光元件的發光面積、操作簡易性 3 5 μηι以下。作爲這樣的導電性導線 用金、銅、白金、鋁等金屬及它們的 (支撐體） 本方式的封裝由配置半導體元件 被覆半導體元件的透光性構件構成。 發光裝置中的支撐體，可適宜利用在 體佈線的板狀的支撐體。發光元件配 撐體的主面上的搭載部。作爲沒有側 側面方向的支撐體，可使從發光元件 不受損失，而向外部取出。本方式的 爲略矩形的長方體，在上表面的略中 向底面側凹陷的凹部。另外，在絕緣 置用於搭載發光元件的金屬構件和兩 凹部設置在這些電極及金屬材料之間 面設置著電極，該電極與設置在絕緣 極電連接。而且，考慮以金屬構件作 體元件的大小及形狀、導電性導線的 。另外，考慮操作性 h、φ45μιη以下爲佳 ，在含有螢光物質的 ，導電性導線容易斷 在25μιη以上，從確 的觀點看，更佳爲在 ，具體地，可列舉使 合金的導電性導線。 及電極的支撐體、和 首先，作爲本方式的 絕緣性基板上實施導 置於設置在板狀的支 壁來包圍發光元件的 的側面方向出射的光 絕緣性基板是上表面 央部具有從上表面側 性基板的上表面，設 對正負成對的電極。 。另外，在凹部的底 性基板的上表面的電 爲搭載部配置的半導 易拉伸性等'適當調 -22- 200921949 整在絕緣性基板上設置的電極以及金屬 構成本方式的支撐體的絕緣性基 件的上表面，在搭載了發光元件的區域 有從上表面側向底面側凹陷的凹部。在 光元件不同的半導體元件，例如保護元 部，俯視其開口部的外形是略正方形， 能夠製成爲與容納在凹部內的半導體元 形狀匹配的形狀及大小。另外，同樣地 照容納的半導體元件的高度及與凹部內 來適當地調節。如圖1所示，在第一琶 載部104b和第二發光元件101b的搭_ 支撐體108的略中央設置凹部103爲佳 體的角落上設置凹部的發光裝置（例如 體，在支撐體的長度方向上，具有依次 件的搭載部、第二發光元件的搭載部、 光裝置等）比較，本方式中的發光裝置 設置凹部，能夠減少對配光性的影響。 另外，例如，在形成透光性構件的 凹部的大小及深度乃俯視凹部的開口部 納在凹部的半導體元件的外形的相似比 而且，凹部的深度、與容納在凹部的半 比是從1 · 0到2.1 4爲佳。這是因爲若相 大小凹部的大小過大，則形成空洞的氣 構件的形狀及位置 在其搭載半導體元 外側的區域上，具 該凹部容納著與發 件。在本方式的凹 但並不限定於此， 件的大小、數量、 ，凹部的深度可按 的電極的連接方式 ，光元件1 0 1 a的搭 6部l〇4b之間，在 。由此，與在支撐 ，從上表面看支撐 配置了第一發光兀 凹部的支撐體的發 ，通過在支撐體上 同時形成空洞時， 的外形、與俯視容 是從1 . 0到2.5， 導體元件的高度的 對於半導體元件的 泡也變大，於是擔 -23- 200921949 心這樣的氣泡受到發光元件的發熱而熱膨脹，由此 置的可靠性、光學特性下降了。 作爲絕緣性基板的材料，可適宜地利用在環氧 a有玻璃成分的玻璃環氧基板、以陶瓷爲材料的基 在發光裝置中要求高對比度時，通過使絕緣性 母材中含有Cr203、Mn02、Fe203等顏料，從而絕 板成爲暗色系爲佳。或者，爲了賦予絕緣性基板高 射率’使其含有二氧化鈦等白色系的顏料爲佳。 特別地’在希望商耐熱性、高耐光性時，以陶 緣性基板的母材爲佳。陶瓷的主材料氧化鋁、氮化 來石寺爲佳。在這些主材料中添加燒結助劑等，通 可得到陶瓷的基板。例如，可列舉原料粉末的9 〇 一 量百分比是現化銘’作爲燒結助劑，添加4〜1 0重 比的黏土、滑石、氧化鎂、氧化鈣、及矽石等，且: 〜1 7 0 〇 °c的溫度範圍內使其燒結的陶瓷、或者原料 4〇〜60重量百分比是氧化鋁，作爲燒結助劑，添丈 40重量百分比的硼矽酸玻璃、堇青石、鎂橄欖石、 等，且在800〜120(TC的溫度範圍內使其燒結的陶 道樣的陶瓷基板能夠在燒成前的印刷電路基板階段 種的形狀。因此，能夠容易地形成具有本方式的凹 緣性基板。另外，在燒成前的印刷電路基板階段能 各種圖形形狀的導體佈線。例如，通過將含有鎢的 狀的材料絲網印刷’能夠形成用於作爲導體佈線、 元件的搭載部的金屬材料的基底層。在這些基底層 發光裝 樹脂中 卜反。 基板的 緣性基 的光反 瓷爲絕 鋁、莫 過燒結 -96重 量百分 生 1 500 粉末的 []6 0 〜 莫來石 瓷等。 做成各 部的絕 夠實施 膠黏劑 半導體 上，將 -24- 200921949 陶瓷的材料燒成後，通過以銀、金、或鋁爲材料的鍍金或 濺射，來配置最表面的金屬材料。最表面用金屬材料被覆 ’該金屬材料對來自發光元件的光具有高反射率爲佳。 (透光性構件） 透光性構件的材料沒有特別限定，例如，可以使用矽 酮樹脂、環氧樹脂、尿素樹脂、氟樹脂、以及含有至少一 種以上這些樹脂的混合樹脂等、耐候性出色的透光性樹脂 。另外’透光性構件不限於有機物，也可以使用玻璃、矽 膠等耐光性出色的無機物。另外，本方式的透光性構件可 以添加黏度增量劑、光擴散劑、顏料、螢光物質等、與用 途對應的所有構件。例如，可以添加與發光裝置的發光色 對應的著色劑。另外，作爲光擴散劑，例如可以列舉鈦酸 鋇、氧化鈦、氧化鋁、二氧化矽、碳酸鈣、以及包含至少 —種以上這些成分的混合物等。並且，能夠通過將透光性 構件的光出射面側製成所希望的形狀，使其具有透鏡效果 。具體地’除了平板狀、凸透鏡形狀、凹透鏡形狀以外， 還可以形成從發光觀測面看成爲橢圓形狀或組合多個前述 形狀的形狀。 (螢光物質） 本方式的發光裝置可以使透光性構件中含有螢光物質 。作爲這樣的螢光物質的一例，有以下所述的含有稀土族 元素的螢光物質。 -25- 200921949 具體地，可列舉具有從Υ、Lu、Sc、La、Gd、Tb、及 Sm群中選擇的至少一個元素和從Al、Ga、及In群中選擇 的至少一個元素的石榴石（garnet )型螢光物質。特別地 ，鋁石榴石系螢光體是含有A1、和從Y、Lu、Sc、La、 Gd、Tb、Eu、Ga、In及Sm中選擇的至少一個兀素，且用 從稀土族元素中選擇的至少一個元素來啓動的螢光體，是 用從發光元件出射的可見光或紫外線來激勵發光的螢光體 。例如，可列舉除釔鋁氧化物系螢光體（YAG系螢光體） 以外，Tb2.95Ce 〇.〇 5AI5O12、Y2.9。Ce 〇.〇5Tb 〇.〇 5AI5O12、 Y 2 . 9 4 C e ο . ο 5 Ρ Γ q . Q ! A 1 5 Ο 1 2、Y 2.9。C e ο .。5 P r ο . ο 5 A 1 5 ◦ 1 2 等。在它 們中，特別在本實施方式中，利用含有Y、且用Ce或pr 啓動、不同組成的2種以上的釔鋁氧化物系螢光體。 另外，氮化物系螢光體是含有N，且含有從Be、Mg 、Ca、Sr、Ba、及Zn中選擇的至少一個元素和從C、S i 、Ge、Sn、Ti、Zr、及Hf中選擇的至少一個元素，用從 稀土族元素中選擇的至少一個元素來啓動的螢光體。作爲 氮化物系螢光體，可列舉例如（SrQ.97EU().Q3 ) 2Si5N8、（ Ca〇.9 8 5 Eu〇.〇 15 ) 2Si5N8 ' ( S r〇. 6 7 9 C a〇 . 2 9，E u〇 . 〇 3 ) 2 S i 5N 8 等 o 以下，對本發明關於的實施例進行詳細描述。而且， 不用說本發明不僅限定於以下所示的實施例。 圖1是模式性顯示本實施例中的發光裝置1 〇 0的頂視 圖。圖2是模式性顯示將圖丨的發光裝置丨00沿π 一 π方 向切斷時的剖面的剖面圖。圖3是模式性顯示將圖1中所 -26- 200921949 示發光裝置loo沿m -瓜方向切斷時的剖面的剖面圖。另 外’圖4是模式性顯示本實施例的發光裝置10〇的底面圖 。圖5是模式性顯示本實施例的發光裝置10()的立體圖。 如圖1所示，本實施例中的發光裝置10〇具備：具有 向發光元件供給電力的第一電極104a及第二電極104c的 平板狀的支撐體108,以設置在該支撐體108的上表面的 金屬構件104b作爲搭載部而配置的多個發光元件101a、 101b’連接第一發光元件l〇la及第二發光元件i〇lb的電 極和第一電極 l〇4a及第二電極 l〇4c的第二導電性導線 106’以及被覆發光元件l〇la、l〇lb及第二導電性導線 1 〇 6的透光性構件1 0 7。 本實施例的發光元件，是2個以氮化鎵系化合物半導 體爲材料的發藍色系的光的L E D晶片〗〇 1 a、i 〇 1 b。這些 LED晶片’俯視上表面時的外形是500μιηχ290μιυ (長X寬 )的長方形，在底面側配置作爲材料含有Au及Sn的共晶 材。這些LED晶片通過共晶材分別接合在搭載部上，該 搭載部以設置在支撐體的上表面的銀爲最表面。 支撐體在以陶瓷爲材料的絕緣性基板上，以鎢爲基底 層，依次鍍有鎳、金及銀。通過這些金屬材料的配置，形 成各電極及金屬構件1 〇 4 b。進而，支撐體1 〇 8在絕緣性基 板的上表面，在被LED晶片1 01 a和LED晶片1 〇 1 b的2 個搭載部夾著的區域上設置具有開口部的凹部1 03。在該 凹部103容納著保護LED晶片101a、101b免受過電壓破 壞的保護元件1〇2。進而，本實施例的發光裝置在對凹部 -27- 200921949 1 03的開口部進行被覆的透光性構件1 07的下表面、和容 納在凹部1 03的保護元件1 02的上表面之間具有空洞1 1 1 〇 本實施例的保護元件102是在上表面和底面具有極性 不同的電極的稽納二極體。以銀膠黏劑作爲導電性黏接劑 ，保護元件102被黏接在凹部103的底面，該底面側的電 極通過導電性黏接劑，與在凹部1 03底面露出的導體佈線 連接。另外，保護元件102的上表面的電極通過第一導電 性導線105，與設置在支撐體的上表面的第一電極104a連 接。 如圖1所示，本實施例的支撐體108具有：在配置發 光元件的上表面，通過第二導電性導線1 06與發光元件連 接的正負成對的電極（第一電極104a及第二電極104c) ;以及與這些電極絕緣、設置在同一支撐體的上表面的金 屬構件104b。2個LED晶片101a、101b搭載在與電極分 開設置的金屬構件l〇4b上。由此，可在支撐體上與連接 電極的導體佈線的配置圖形分開設置散熱通路，因此能夠 製成散熱性高的發光裝置。 如圖4所示，本實施例的發光裝置100，從其背面方 向看，在支撐體108的長度方向上，互相面對的一對側面 有切口，從該切口的部位的內面向支撐體108的中央部延 伸設置第一外部連接電極1 1 〇a及第二外部連接電極1 1 0c 。爲了與各半導體元件連接，這些第一外部連接電極1 l〇a 及第二外部連接電極110c與配置在支撐體108的上表面 -28- 200921949 的第一電極l〇4a、第二電極104c以及配置在凹 面的電極導通。即，第一外部連接電極110a及 連接電極1 1 〇c，通過在支撐體內埋設的導體佈線 第一電極104a及第二電極l〇4c電連接。第一外 極ll〇a及第二外部連接電極ll〇c，在將發光裝 錫安裝在外部的佈線基板上時，通過該焊錫與佈 接。 如圖2及圖3所示，本實施例的空洞1 1 1是 實施例的發光裝置1 0 0的透光性構件1 0 7的工程 在凹部103內氣泡殘存而形成的。即，在支撐體 置各半導體元件並用導電性導線連接各電極後， 含有YAG系螢光體的矽酮樹脂使其被覆發光元 性導線以及凹部的開口部而形成。本實施例的發 製造方法略如下所述。 首先’在以陶瓷爲絕緣性基板的材料的支撐· 集合基板上，使多個L E D晶片排列，接著在凹 護元件1 03，並利用導電性導線等進行電連接。 銀膠黏劑爲黏接劑，保護元件1 03被黏接在配置 底面的導體佈線上，保護元件1 〇 3的底面的電極 黏劑與導體佈線電連接。 接著’沿著L E D晶片的排列直線狀地配置j 系螢光體的矽酮樹脂，以便將多個LED晶片、 線及凹部的開口部一起被覆。這時，含有YAG 的矽酮樹脂的黏度爲3 00Pa · s。另外，本實施例 部103底 第二外部 ，分別與 部連接電 置100焊 線基板連 在形成本 中，通過 1 0 8上配 通過印刷 件、導電 光裝置的 體1 0 8的 部容納保 而且，以 在凹部的 通過銀膠 * 有 YAG 導電性導 系螢光體 的保護元 -29- 200921949 件，俯視其上表面的外形尺寸爲240μπι;<240μιη的正方形 ，配置在凹部的底面時的高度是〇. 14mm。將這樣大的保 護元件容納在凹部時，凹部的開口部的外形尺寸乃一邊爲 0.24mm以上、0.60mm以下的正方形，從開口部上表面到 凹部底面的深度爲0.15mm以上、0.30mm以下爲佳。本實 施例中，凹部的開口部的外形尺寸是0.50mmx0.50mm的 正方形，深度是〇. 1 5mm。而且，使矽酮樹脂固化後，利 用切割來切斷透光性構件及絕緣性基板，以規定的大小使 其個片化，由此得到本實施例的發光裝置1 〇〇。 而且，在形成支撐體108的上表面外形的矩形的四角 或邊上分別形成的標記（包括直線或L字型形狀的記號） 109除了可作爲標識來識別設置在發光裝置100上的正負 成對的外部連接電極1 1 〇 a、1 1 0 C的極性外，還可在切割 集合基板進行個片化時，作爲示出切割線的記號來利用。 本發明，能夠使用在照明用光源、各種指示器用光源 、車載用光源、顯示器用光源、液晶的背光用光源等上。 在示出和描述各種首選的實施例後，本發明對於那些 具有一般技能的技術人員應是顯而易見的。可預見本發明 並不限於所揭示的特定的實施例，它被認爲只是說明本發 明的槪念，而不應被解釋爲本發明的限定範圍。本發明適 合在權利要求所定義的發明範圍內進行各種修改和變化。 本申請是基於在2007年7月19日入檔的日本特開 2007-188709號公報和在2007年12月27日入檔的日本特 開2007-335793號公報，與此有關的內容作爲參考。 -30- 200921949 【圖式簡單說明】 圖1是模式性顯示本發明的一個實施例關於的發光裝 置的頂視圖。 圖2是模式性顯示圖〗中所示的沿π — π方向的發光 裝置的剖面的剖面圖。 圖3是模式性顯示圖丨中所示的沿瓜_瓜方向的發光 裝置的剖面的剖面圖。 圖4是模式性顯示本發明的一個實施例中的發光裝置 的底面圖。 圖5是模式性顯示本發明的一個實施例中的發光裝置 的立體圖。 圖6是模式性顯示本發明的另一個實施例關於的發光 裝置的剖面的剖面圖。 【主要元件符號說明】 100、200·發光裝置（light: emitting: device) 101a、101b·發光兀件（light: emitting: element) 102 :半導體兀件（semiconductor : element) 103:凹部（cavity) 104a:第一電極 104b :金屬構件（metallic : component) 1 04c :第二電極 105 :第一導電性導線 -31 - 200921949 106 ： 107 ： 108： 109： 110a 110c 111： 112： 第二導線性導線 透光性構件（translucent: member) 支撐體（base) 標記（m a r k ) :第一外部連接電極 :第二外部連接電極 空洞（cavity) 突出部(protuberance ) -32-BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light-emitting device for a lighting fixture, a display, a backlight for a portable telephone, an animated illumination auxiliary light source, other light sources, and the like, and a method of manufacturing the same. [Prior Art] A light-emitting device using a light-emitting element such as a light-emitting diode emits light of a bright color in a small size and excellent in power efficiency. In addition, such a light-emitting element is different from an electric light bulb or the like' without fear of the bulb being broken. Moreover, it has the characteristics of excellent initial drive characteristics, vibration resistance and repeated operation of the switch lamp. Because of such excellent characteristics, a light-emitting device using a light-emitting element such as a light-emitting diode (LED) or a laser diode (LD) is used as a light source such as a backlight for a lighting device or a portable telephone. In such a light-emitting device, in order to protect the light-emitting element from overvoltage, a protective element such as a Zener diode is mounted on the light-emitting device. Such a protective element is disposed adjacent to the light-emitting element on the support substrate on which the light-emitting element is mounted, and is electrically connected to the light-emitting element. For example, the light-emitting device disclosed in Japanese Laid-Open Patent Publication No. Hei No. Hei. No. Hei. No. Hei. An LED chip, a protective element (for example, a Zener diode) disposed on the second electrode, and an encapsulating resin covering the LED chip and the conductive wire connected to the LED chip. Further, one electrode of the LED chip is connected to the first electrode, and the other electrode and the second electrode of the second electrode are connected by wires. On the other hand, the electrode on the upper surface side of the protective element is connected to the first electrode by a conductive wire, and the electrode on the lower surface side is connected to the second electrode via a conductive adhesive. In such a light-emitting device, since light from the light-emitting element is absorbed by the protective element or blocked by the protective element, the light extraction efficiency is lowered as a whole of the light-emitting device. Therefore, if a concave portion is formed under the protective member, and a protective member is disposed in the concave portion such that the height of the protective member is lower than the height of the light-emitting element, the breakage of light by the protective member can be reduced. In the light-emitting device disclosed in Japanese Laid-Open Patent Publication No. H2007-150229, a reflecting member different from the light-transmitting member that covers the light-emitting element is disposed between the light-emitting element and the protective element, so that the light-emitting element is provided. The light is reflected outside the light-emitting device, whereby the protective element does not interfere with the passage of light that is extracted from the light-emitting element to the outside of the light-emitting device. Further, in consideration of ease of operation when mounting a plurality of semiconductor elements on a support substrate, etc., a recess for accommodating the protective element is provided on the support substrate so that an opening portion is provided on the same surface as the surface on which the light-emitting element is mounted. good. However, when the protective element is placed in the concave portion formed lower than the mounting surface of the light-emitting element, a part of the light emitted from the end surface direction of the light-emitting element placed above is sealed in the concave portion. Thereby, the efficiency of extracting light to the outside of the light-emitting device is lowered. Further, in the case where the body color of the protective element absorbs light from the light-emitting element, the enclosed light is absorbed by the protective element, so that the output of the light-emitting device is remarkably lowered. Further, if the concave portion accommodating the protective member is buried by the light-reflecting dam, thereby preventing the intrusion of light into the concave portion, it is unrealistic because of labor or material cost. SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to provide a light-emitting device having excellent optical characteristics and, in addition, an object of providing a light-emitting device. In order to achieve the above object, a light-emitting device light-emitting device according to the present invention, a package in which the light-emitting element is disposed, and a conductive lead wire connecting the electrode provided and the electrode of the light-emitting element include a support body and a support body The light-transmitting structure has a mounting portion for arranging the light-emitting element and a recess for accommodating a semiconductor element different from the front member, and the light-transmitting member is provided with a cavity by the opening of the light-emitting element and the recess. The cavity is provided on a transparent bottom surface covering the opening and an upper surface of the semiconductor element housed in the recess. Further, a method of manufacturing a light-emitting device, a package, and a connection arrangement for arranging the light-emitting device a conductive wire of the electrode and the electrode of the light-emitting element; a light-transmitting member covering at least the light-emitting element; and a recess having a mounting portion in which the light-emitting element is disposed and a semiconductor element different in the light-receiving element; The light-emitting device includes the following items: a first project to form a support having a concave portion that is opened on the upper surface of the mounting front member; and a second project in which the reliability of the semiconductor element is disposed below the upper surface of the mounting portion of the component In the package, the illuminating element is preferably provided between at least the concave optical member: the package supporting body and the illuminating element of the illuminating element Upper surface -6- 200921949 'In the concave part of the head, accommodate the aforementioned semi-conductive In the third aspect, the light-emitting element and the conductive wire are disposed; and in the fourth aspect, a cavity is formed in the recess, and light transmittance of at least the opening of the light-emitting element and the recess is disposed on the support member. The foregoing and further objects and features of the present invention will become more apparent from the detailed description of the invention. [Embodiment] The light-emitting device is provided with a protective element on the bottom surface of the concave portion which is lower than the mounting surface of the light-emitting element, and further has a cavity in the concave portion in which the protective element is accommodated. Here, a difference in refractive index is generated between the light transmissive member covering the light-emitting element and the cavity. Then, the light emitted from the light-emitting element or the light from the phosphor is reflected on the boundary surface having a different refractive index and taken out to the outside of the light-emitting device. That is, the present invention can improve the light extraction efficiency of the light-emitting device by using the cavity provided in the concave portion as compared with the prior art. Further, these lights are taken out from the light-emitting device without loss in the concave portion, and the variation in the chromaticity of the light-emitting device is also small. The light-emitting device is provided with a cavity formed by arranging a light-transmitting member on the support in a recess in which the protective element is housed, thereby preventing intrusion of light into the recess. Therefore, the present invention can be compared with a light-emitting device in which a light-reflective entangled object is embedded in a concave portion, or a light-emitting device in which a reflecting member different from a light-transmitting member that covers a light-emitting element is provided between a light-emitting element and a protective element. An inexpensive light-emitting device that has less light loss due to the recess in which the protective element is housed and has a relatively simple structure. In addition, the method of manufacturing a light-emitting device can be relatively simple compared with a light-emitting device in which a light-reflective charge is embedded in a recess in which a protective element is housed, or a light-emitting device in which a reflective member is provided between a light-emitting element and a protective element. A light-emitting device having less light loss in the concave portion is formed inexpensively. Further, in the method of manufacturing a light-emitting device according to the present invention, by forming a light-transmitting member that covers the light-emitting element on the support, it is also possible to cause the air bubbles to remain in the concave portion having the bottom surface lower than the mounting surface of the light-emitting element. Therefore, it is possible to manufacture a light-emitting device having less light loss in the concave portion in a relatively simple and inexpensive manner. The cavity formed in the package recess of the light-emitting device is preferably provided between the bottom surface of the light-transmitting member covering the opening and the upper surface of the semiconductor element housed in the recess. Further, the light transmissive member preferably has a convex projection from the opening of the concave portion toward the bottom surface of the concave portion. Further, the concave portion is provided in a region sandwiched by the plurality of mounting portions of the light-emitting element. The support body preferably has an external connection electrode slightly below the mounting portion. Further, the similarity ratio of the outer shape of the opening portion of the concave portion in plan view to the outer shape of the semiconductor element housed in the concave portion in plan view is from 1 · 〇 to 2. 5 is better. Further, the fourth project includes a process of continuously supplying the material of the light transmissive member in a direction substantially parallel to the mounting surface of the light-emitting element. Further, the viscosity of the material of the light-transmitting member is adjusted in accordance with the size of the concave portion corresponding to the size of the semiconductor element, in the fourth project -8 - 200921949, so that bubbles remain in the concave portion. Further, the material of the light transmissive member is preferably a material containing at least one or more resins selected from the group consisting of an fluorenone resin and an epoxy resin, and containing a particulate phosphor in the resin. Further, the viscosity of the material of the light-transmitting member is preferably 200 Pa·s or more and 500 Pa·s or less. Further, the similarity of the outer shape of the opening of the concave portion in plan view and the outer shape of the semiconductor element housed in the concave portion in plan view is from 1.0 to 2. 5. The ratio of the depth of the concave portion to the height of the semiconductor element accommodated in the concave portion is from 1.  Go to 2. 1 4 is better. A light-emitting device having a light-emitting element, a package in which the light-emitting element is disposed, and a conductive lead wire connecting an electrode provided on the package and an electrode of the light-emitting element, wherein the package includes a support and a light-transmitting member covering at least the light-emitting element The support has a mounting portion for arranging the light-emitting element and a recess for accommodating a semiconductor element different from the light-emitting element, and the present inventors conducted various studies in order to reduce the loss of light by the recess. As a result, the opening portion of the concave portion accommodating the semiconductor element different from the light-emitting element is covered with a part of the light-transmitting member covering the light-emitting element, thereby providing a package in which the cavity is provided in the concave portion, thereby solving the problem. According to the present invention, by having a cavity in the concave portion, a refractive index difference is generated between the light transmissive member and the cavity of the opening portion of the covering concave portion. Then, with these boundary faces having different refractive indices as the reflecting faces, the light is reflected and emitted from the light-emitting device. Thus, the present invention does not cause light loss in the concave portion, so that the light extraction efficiency of the light-emitting device is improved as compared with the prior art. -9- 200921949 Further, it is preferable that the cavity in the package of the light-emitting device is provided between the bottom surface of the light-transmitting member covering the opening portion of the concave portion and the upper surface of the semiconductor element housed in the concave portion. This is because it is possible to suppress the light propagating through the light transmissive member from being absorbed by the semiconductor element housed in the concave portion. The light transmissive member has a protruding portion at the opening of the concave portion, and the protruding portion preferably has a convex bottom surface facing the bottom surface of the concave portion. This is because the use of such a projection portion does not cause light to enter the concave portion, thereby improving the effect of reflecting in the direction of the light-transmitting member on the upper surface of the support. Further, it is preferable to provide a cavity between the bottom surface of the light transmissive member or the protruding portion thereof and the upper surface of the semiconductor element housed in the concave portion. By providing a space due to the cavity between the bottom surface of the light transmissive member and the upper surface of the semiconductor element, the light outside the concave portion will not be irradiated to the direction of the semiconductor element, and not by the semiconductor element housed in the concave portion. Suffered losses. The similarity of the outer shape of the opening portion of the recessed portion in plan view and the outer shape of the semiconductor element housed in the recessed portion is from 1 to 0. 5 is better. This is because if the size of the opening of the concave portion is too large with respect to the size of the semiconductor element, the amount of light that enters the concave portion increases. In addition, when the size of the opening is too small with respect to the size of the semiconductor element, the operability of the process of disposing the semiconductor element in the recess is lowered, so that it is not possible to manufacture a light-emitting device with good mass productivity. In a method of manufacturing a light-emitting device, the light-emitting device includes a light-emitting element, a package in which the light-emitting element is disposed, and a conductive lead wire that connects an electrode provided on the package and an electrode of the light-emitting element, and the package includes: a cover-coated at least light-emitting element a light-transmissive member having a mounting portion for arranging a light-emitting element and a recess for accommodating a semiconductor element different from that of the light-emitting element, and a recess having a small amount of light loss in the concave portion for relatively simple and inexpensive manufacturing. The light-emitting device 'The present inventors conducted various studies. As a result, the method of manufacturing a light-emitting device includes a recessed portion having an opening on a mounting surface of a light-emitting element on a support, and a second project, which is larger than a mounting surface of the light-emitting element. The upper surface of the semiconductor element is disposed at a low level, and the semiconductor element is accommodated in the recess; the third step is to arrange the light-emitting element and the conductive lead; and the fourth project is to form a cavity in the recess, and an opening covering at least the light-emitting element and the recess is disposed on the support The translucent member of the part is thus solved. In other words, since the method of manufacturing the light-emitting device does not require embedding the light-reflecting entangled material in the concave portion in which the semiconductor element is housed, it is possible to manufacture the light-emitting device having less light loss in the concave portion in a relatively simple and inexpensive manner. Further, in the method of manufacturing a light-emitting device, the formation of a light-transmitting member for a support and the formation of voids in the same process can be performed, whereby the construction of the light-emitting device can be simplified. In the case of such a method, the fourth step of forming the light transmissive member includes a process of continuously supplying the material of the light transmissive member in a direction slightly parallel to the mounting surface of the light emitting element. In other words, a material having a fluid transmissive member is introduced in a direction slightly parallel to the mounting surface on which the light-emitting element is placed, and the material is molded and cured to form a light-transmitting member. Moreover, "slightly parallel" is a plane parallel to the ytterbium surface of the light-emitting element, ± 1 〇. The left and right ranges are allowed. The viscosity of the material of the light transmissive member is adjusted in the fourth process in accordance with the size of the semiconductor element and the recess to be accommodated, so that the bubbles remain to form voids. For example, the size and depth of the concave portion are the outer shape of the opening portion of the concave portion in the plan view -11 - 200921949, and the similarity ratio to the outer shape of the semiconductor element housed in the concave portion in plan view is from 1 .  0 to 2. 5, and the ratio D (D/H) of the depth D of the concave portion to the twist of the semiconductor element accommodated in the concave portion is from! _ 〇 to 2 · 丨 4 is better. This is to minimize the size of the bubble regardless of the decrease in the reliability of the light-emitting device. Further, the viscosity of the material of the light transmissive member is 200 p a.  Above s, 500 Å P a · s or less is preferred. The chasing is because if the viscosity is low, no void is formed in the concave portion in which the semiconductor element is accommodated, and the concave portion is filled with the material of the light transmissive member. On the other hand, if the viscosity is too high, the workability of the material in which the light-transmitting member is disposed is lowered. Further, by adjusting the viscosity of the material of the light transmissive member, the material is convexly extended from the opening of the concave portion toward the bottom surface of the concave portion, and the protruding portion of the light transmissive member is formed in the opening portion of the concave portion. Thus, it is possible to form a light-emitting device in which a convex bottom surface in the protruding portion of the light-transmitting member and a top surface of the semiconductor element housed in the concave portion are provided with a cavity. The material of the light transmissive member is preferably a material containing at least one or more resins selected from the group consisting of an fluorenone resin and an epoxy resin, and containing a particulate phosphor in the resin. This is because the viscosity of the resin containing the particulate phosphor can be easily adjusted by adjusting the content ratio of the particulate phosphor in the resin, and the light-emitting device including the phosphor in the light-transmitting member can be easily Make holes formed. The foregoing and the following objects and features of the present invention will become more apparent from the detailed description of the invention. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a top plan view schematically showing an illuminating device -12-200921949 according to an embodiment of the present invention. Fig. 2 is a cross-sectional view schematically showing a cross section of the light-emitting device in the Π-Π direction shown in Fig. 1. Fig. 3 is a cross-sectional view schematically showing a cross section of the light-emitting device in the melon-canlon direction shown in Fig. 1. Fig. 4 is a bottom plan view schematically showing a light-emitting device in an embodiment of the present invention. Fig. 5 is a perspective view schematically showing a light-emitting device in an embodiment of the present invention. Fig. 6 is a cross-sectional view schematically showing a cross section of a light-emitting device according to another embodiment of the present invention. As shown in FIG. 1, the light-emitting device 100 of the present embodiment includes two light-emitting elements 101a and 101b as main constituent members, and a support body 108 in which these light-emitting elements are disposed, and other light-emitting elements mounted on the same support body. The semiconductor element 102, and the first conductive wire 1 〇 5 connecting the electrode of the semiconductor element 102 to the electrode of the support, and the electrode of the light-emitting element are connected to the second conductive wire 16 of the electrode of the support. In the present embodiment, the semiconductor element 102 which is mounted on the support separately from the light-emitting element is a protective element (e.g., 'Jenner diode') for protecting the light-emitting element from an overvoltage. The support 1 〇 8 has a recessed portion 凹陷 3 recessed from the upper surface side on which the light-emitting elements 1 0 1 a and 1 0 1 b are disposed, and the protective member is housed in the recessed portion 103. Further, 'on the upper surface of the support body 108, as shown in Figs. 2, 3, and 5, the light transmissive member 107 is disposed to block the opening portion of the concave portion 103, and the light transmittance is -1, 2009, 1949, and the member is at least 10 The light-emitting elements 10 1 a, 1 0 1 b disposed on the upper surface side and the second conductive wires 106 connected thereto are covered. Here, the concave portion 103 has a cavity between the light transmissive member disposed on the upper surface of the support body 1 8 and the inner wall of the concave portion. Here, the "cavity" in the present specification is a bubble formed inside the light transmissive member 107 or between the translucent member 107 and the support and containing air or other gas, or in the translucent member 107. A gap formed between the lower surface and the recess. Such a cavity is disposed on the outer side of the semiconductor element disposed in the recess, particularly on the upper side of the semiconductor element, that is, the direction in which light travels from the outside of the opening. The shape and number of voids are not limited. For example, a state in which a plurality of spherical cavities are dispersed in the concave portion may be used. By disposing the voids in a dispersed manner, the same effect as when the diffusing agent is contained in the light-transmitting member can be obtained. In other words, light is diffused in the light transmissive member, thereby suppressing the intrusion of light into the bottom surface of the concave portion. Further, the position of the cavity is not limited to the bottom surface of the light transmissive member of the opening portion and the upper surface of the semiconductor element. A cavity may be formed between the translucent member of the opening portion of the covering recess and the inner wall of the recess. For example, a cavity may be provided between the side surface of the semiconductor element housed in the recess and the inner wall surface of the recess. As shown in FIGS. 2 and 3, the light-emitting device 100 of the present embodiment has a lower surface of the light-transmissive member 107 covering the opening of the concave portion 103, an upper surface of the semiconductor element 102, and a concave portion 1. A void 1 1 1 is placed between the inner walls of 0 3 . The light incident on the boundary surface can be reflected toward the light-transmitting member 107 side at the boundary surface between the cavity 1 1 1 formed in the opening of the recessed portion 110 and the light-transmitting member 107. Therefore, the light-emitting device 100 of the present embodiment can remove the light into the inside of the concave portion 103, and can take out the cavity 1 1 1 from the outside of the light-emitting device to form a light-transmitting property on the support body 108. 1 〇7 is formed integrally in the project. For example, it is possible to form a stencil and a mask on the surface of the support 10 8 and then print the light-transmissive member 107. The method is a method of feeding a material in a direction slightly parallel to the upper surface of the support body and arranging it to cover the respective members of the upper surface of the support body 108. Therefore, the recessed portion 110 is not completely filled with the material of the light-transmitting member 107, but a material in which the cavity 1 is formed in the concave portion 103 and the light-transmitting member 107 is disposed. The material of the transparent member 107 of the present embodiment is previously adjusted to a predetermined viscosity in consideration of the size of the opening of the recessed portion 1 〇 3 and the ease of operation of the arrangement of the material. For example, in a light-emitting device in which a phosphor is contained in a light-transmitting member, a YAG light body is used as a phosphor, and an anthrone resin is used as a material of a light-transmitting member, and mixed. The viscosity of the material thus produced is measured by a Β-type viscometer, which is over 200 Pa·s and 500 Pa.  s below. Further, in the manufacturing method of the present embodiment, when the material of the member is placed on the upper surface of the support, the concave portion recessed from the upper surface of the support on which the hair piece is mounted is likely to be void due to the remaining of the air bubbles. That is, the protective member is accommodated in the concave portion of the recess, so that the air bubbles remain around the protective member, thereby forming a cavity. Therefore, according to the method for manufacturing a light-emitting device of the present invention, it is possible to combine the work of the light-transmitting member that covers the light-emitting element on the upper surface of the support, and the use of the remaining space in the concave portion having the bottom surface lower than the light-emitting element mounting surface. The cavity is formed. The light-emitting device of the present embodiment is configured such that the optical material of the upper surface of the upper surface of the optical member in which the optical member is housed in the recessed portion for accommodating the protective member is tuned, and the light-transmitting light element is formed to form the protective medium-receiving member. Engineering reflection -15- 200921949 The device comparison of the entangled entangled material is a light-emitting device with high light extraction efficiency that can be manufactured relatively simply and inexpensively. Further, as shown in Fig. 6, the light-emitting device of the present embodiment can provide the protruding portion 1 1 2 of the light transmissive member 107 in the opening portion of the concave portion 103. The protruding portion 1 1 2 is a portion having a convex surface that protrudes convexly in the direction of the bottom surface of the concave portion in the light transmissive member 107. Further, it is also possible to have a cavity 111 between the convex bottom surface of the protruding portion 112 and the upper surface of the semiconductor element 1200 accommodated in the concave portion. The protruding portion 1 1 2 of such a light transmissive member can be formed by adjusting the shape of the light transmissive member having a certain viscosity and then solidifying it. That is, after adjusting the viscosity of the material of the light-transmitting member, the fluid material is convexly extended from the opening of the concave portion toward the bottom surface of the concave portion, and is solidified when it is in a desired shape. Further, by appropriately adjusting the viscosity of the material of the light transmissive member, it is possible to adjust the extent of the extension to the bottom surface of the concave portion. Thereby, a cavity can be formed between the convex bottom surface of the protruding portion and the upper surface of the semiconductor element housed in the concave portion, or the size can be adjusted. Alternatively, the cavity 111 in the present embodiment can also be provided with a translucent member 1 0 7 formed in another process on the upper surface of the support 108, and a semiconductor component is disposed by a part of the translucent member 107. The opening of the recess is blocked and thereby provided. In other words, in the light transmissive member 107 which is disposed on the upper surface of the support body 108 for covering the light-emitting element, the light-transmitting member 1 〇7 which blocks the opening of the recessed portion 110 A cavity is formed between the surface and the recess 203, and light can be reflected by the lower surface of the translucent member and taken out to the outside. Further, in consideration of the improvement of the productivity, it is preferable to form a method for forming a void while forming a light-transmitting member covering the light-emitting element and the conductive wire as described in the above-mentioned Japanese Patent Publication No. Hei. In the present specification, the upper surface of each member is the surface on which the shape of the support is formed, and the surface on which the light-emitting element is mounted is the upper surface, and the surface facing the upper surface is the bottom surface. Further, the faces connecting the upper surface and the bottom surface are side faces. The light-emitting device 100 of the present embodiment includes the pair of externally connected electrodes 1 10a and 1 10c. When the light-emitting device 1 is mounted on a wiring board (not shown) by soldering, the electrode is externally connected by the solder. a, 1 10c are connected to the electrodes of the wiring substrate. At this time, the external connection electrodes 1 1 0 a and 1 1 0 c can also serve as a heat dissipation path from the support to the wiring substrate via the solder. Therefore, when the mounting portion of the light-emitting element is disposed slightly above the external connection electrode provided on the bottom surface side of the support, the heat dissipation path can be shortened, and the heat dissipation of the light-emitting device can be improved. Further, in the light-emitting device 1 of the present embodiment, when the mounting portions of the plurality of light-emitting elements 10a and 101b are provided on the support 108, such a support is viewed from the direction of the upper surface of the support. It is preferable that an opening portion for accommodating a concave portion of a semiconductor element different from the light-emitting element is provided in a region sandwiched between the plurality of mounting portions 104b of the plurality of light-emitting elements. Further, it is preferable that the pair of external connection electrodes 110a and 110C of the light-emitting device 100 are extended directly below the respective mounting portions 10b to 4b of the light-emitting elements 101a and 101b. In other words, the outer shape of the external connection electrodes 110a and 110c disposed on the back surface of the support body 108 constituting the light-emitting device 100 is vertically projected from the upper surface (shown in FIG. 1) of the support body 108 to the rear surface (shown in FIG. 4). The configuration of the shape of the 〇4b is preferably a shape including at least a part of the projected shape of the -17-200921949, and it is more preferable to have all the shapes including the aforementioned projected shape. For example, in the light-emitting device of the present embodiment, as shown in FIG. 4, the pair of external connection electrodes 11a and 110c disposed on the bottom surface of the support body extend from both end portions of the support body 108 to the light-emitting element 10a, The mounting portion 1 of 101b is directly below the 〇4b. When the plurality of light-emitting elements are mounted on the support by the arrangement relationship between the external connection electrodes and the mounting portions of the light-emitting elements, the recesses or the holes provided in the recesses do not hinder the wiring from the mounting portion of the light-emitting elements via the external connection electrodes. Heat dissipation of the substrate. Therefore, the output of the light-emitting device can be improved without lowering the heat dissipation of the light-emitting device. Positive and negative pairs of electrodes are provided in the recess for accommodating the semiconductor element, and electrical connection of these electrodes and the semiconductor element can also be performed in the recess. The connection between the electrode in the concave portion and the electrode of the semiconductor element can, for example, be such that the positive and negative electrodes exposed on the bottom surface of the concave portion and the electrode of the semiconductor element face each other and are joined by bumps or the like, or conductive wires can be used. The electrode on the upper surface of the semiconductor element is connected to the electrode on the bottom surface of the recess. It is preferable that all of the conductive wires connecting the electrodes of the semiconductor element and the electrodes in the concave portion are accommodated in the concave portion. That is, the topmost portion of the conductive wire is preferably lower than the upper surface of the support in which the light-emitting element is disposed. Thereby, the translucent member 107 is less affected by the conductive wires, and the deterioration of the reliability of the light-emitting device due to the metal fatigue of the conductive wires can be eliminated. According to the light-emitting device of the present aspect, the light-emitting element has a concave portion between the light-emitting element and the light-emitting element different therefrom, and the amount of light increases in a region sandwiched by the light-emitting element, and if the light enters the concave portion, the light is lost. Change more -18- 200921949. In order to reduce the loss of light in a light-emitting device of such a structure, the present invention is particularly preferably applied. Hereinafter, each constituent member in the light-emitting device of the present embodiment will be described in detail. (Light-emitting device) In the present embodiment, a semiconductor device in which a light-emitting element and a protection element are disposed on a support is described. However, the present invention is not limited to such a configuration, and a light-receiving element or another protective element (resistance, A semiconductor device such as a transistor or a capacitor, or an element in which at least two or more of them are combined. The light-emitting element, the protective element or other semiconductor element housed in the recess may be one or more than one. The luminescent color of the illuminating element may be any of red, green or blue, or a combination of these colors. The light-emitting element of the present embodiment is preferably a semiconductor light-emitting device having an active layer as a light-emitting device having a fluorescent material, and the active layer can emit light having a wavelength at which the fluorescent material can be excited. Examples of such a semiconductor light-emitting device include various semiconductors such as ZnSe and GaN, and a nitride semiconductor capable of emitting short-wavelength light capable of efficiently exciting a fluorescent material (InxAWGaj. x. YN, O^X, 0SY, χ+YSi). Various light-emitting wavelengths can be selected by using the material of the semiconductor layer or its crystallinity. When a nitride semiconductor is used as the material of the light-emitting element, materials such as sapphire, spinel, SiC, Si, ZnO, or GaN can be suitably used for the semiconductor substrate for laminating the semiconductor. In order to form a nitride semiconductor having good crystallinity in a mass production manner, a sapphire substrate is preferably used. On the sapphire -19-200921949 stone substrate, a nitride semiconductor can be formed using a mocvd method or the like. Further, the semiconductor substrate can also be removed after laminating the semiconductor layers. In the case of a light-emitting device that emits white mixed light, the light-emitting wavelength of the light-emitting element is preferably 400 nm or more and 530 nm or less, more preferably in a complementary color relationship with the light-emitting wavelength from the fluorescent material or deterioration of the sealing resin. It is 420 nm or more and 490 nm or less. In order to further improve the excitation and luminous efficiency of the light-emitting element and the fluorescent material, it is preferably 450 nm or more and 475 nm or less. As a material of the light-emitting element that emits red light, a gallium aluminum arsenide semiconductor or an aluminum indium gallium phosphorus semiconductor is preferable. Further, in order to form a color display device, it is preferable to combine a red light-emitting element having a light-emitting wavelength of from 610 nm to 700 nm, a green color of from 495 nm to 565 nm, and a blue light-emitting wavelength of from 430 nm to 490 nm. After the light-emitting elements are fixed to the support, the electrodes of the light-emitting elements and the conductor wirings of the support are respectively connected by conductive wires. In particular, the bonding member for fixing the light-emitting element is not particularly limited, and an insulating adhesive such as an epoxy resin or a eutectic material containing Au and Sn, a low-melting-point metal, or the like, and a conductive adhesive containing a resin can be used. Agent or glass, etc., the resin contains a conductive material. Here, the conductive material contained in the conductive adhesive is preferably Au, Sn or Ag, and more preferably, if an Ag adhesive having an Ag content of 80% to 90% is used, heat dissipation can be obtained. Excellent lighting device. Further, the semiconductor element having the electrode on the bottom surface side can be bonded to the support by a conductive adhesive containing a metal material such as silver, gold or palladium. In the case of a light-emitting element formed by laminating a nitride semiconductor on a light-transmitting sapphire substrate, -20-200921949, the bonding member may, for example, be an epoxy resin or an anthrone. In this case, a metal material of silver or aluminum may be disposed on the bottom surface of the light-emitting element (that is, the surface on the side opposite to the surface on which the nitride semiconductor is laminated in the sapphire substrate. Hereinafter, the same in the paragraph). For example, a metal layer can be formed by vapor deposition or sputtering of a metal material of silver or aluminum on the bottom surface of the light-emitting element. As a result, the light reflectance of the bottom surface of the light-emitting element is improved. Therefore, when the resin material is used as the bonding member, deterioration of the resin due to light or heat from the light-emitting element is suppressed, and the light extraction efficiency of the light-emitting device is improved. Further, a metal layer made of silver or aluminum and a eutectic layer made of Au or S η are laminated in this order from the bottom surface side of the light-emitting element. Thereby, the light reflectance between the bottom surface of the light-emitting element and the eutectic layer is improved. Further, when the eutectic material contains a material that absorbs at least a portion of the light from the light-emitting element, the light extraction efficiency of the light-emitting device is improved because the loss of light on the bottom surface side of the light-emitting element is reduced. The light-emitting element is fixed to the light-emitting element mounting portion provided on the upper surface of the support body described below by a bonding member. In the present embodiment, the light-emitting element is fixed to the metal member provided on the upper surface of the support. However, it is not limited to the manner of the stomach sample. The light-emitting element may be mounted on the insulating member constituting the support. (Electrically Conductive Wire) The conductive wire is required to be a wire having good ohmicity, mechanical connectivity, electrical conductivity, and thermal conductivity with respect to the electrode of the light-emitting element. Thermal conductivity is in O. Olcal / ( s ) ( cm2 ) ( 〇 C / cm ) is better, more preferably -21 - 200921949 0. 5cal/ ( s ) ( cm2 ) ( t: /cm ) or more The diameter of the temple's conductive wire is φ ΙΟμηι. The light transmissive member contains an interface line between the phosphor material portion and the portion not containing the phosphor material. Therefore, it is more preferable that the diameter of the conductive wire is such that the light-emitting area of the light-emitting element and the ease of operation are 3 5 μηι or less. As such a conductive wire, a metal such as gold, copper, platinum, or aluminum, or a support thereof is used. The package of the present embodiment is composed of a light-transmitting member in which a semiconductor element is covered with a semiconductor element. In the support body in the light-emitting device, a plate-shaped support body of the body wiring can be suitably used. The light-emitting element is provided with a mounting portion on the main surface of the support. As the support having no side surface direction, the light-emitting element can be taken out to the outside without being lost. In the present embodiment, a rectangular parallelepiped having a substantially rectangular shape is recessed toward the bottom surface side in the upper surface. Further, a metal member for mounting the light-emitting element and two recessed portions are provided between the electrodes and the metal material, and the electrodes are electrically connected to the insulating pole. Further, it is considered that the metal member is the size and shape of the body element and the conductive wire. In addition, it is preferable that the operability h is φ45 μm or less, and the conductive wire containing the fluorescent material is likely to be broken at 25 μm or more, and more preferably, it is preferable that the conductive wire of the alloy is used. . And the support body of the electrode, and the light-insulating substrate which is guided to the side surface of the insulating substrate which is disposed on the insulating substrate of the present embodiment and surrounds the light-emitting element, and has an upper surface of the upper surface. The upper surface of the surface-side substrate is provided with pairs of positive and negative electrodes. . In addition, the semi-conductive stretchability and the like which are disposed on the upper surface of the underlying substrate of the recessed portion of the bottom substrate are appropriately adjusted, and the electrode provided on the insulating substrate and the metal constitute the support of the present embodiment. The upper surface of the insulating base member has a concave portion recessed from the upper surface side toward the bottom surface side in a region where the light emitting element is mounted. In the semiconductor element having different optical elements, for example, the protective element portion, the outer shape of the opening portion is slightly square in plan view, and can be formed into a shape and a size matching the shape of the semiconductor element housed in the concave portion. Further, the height of the semiconductor element accommodated in the same manner and the inside of the concave portion are appropriately adjusted. As shown in FIG. 1, a light-emitting device (for example, a body on a support body) in which a concave portion 103 is provided at a corner of a first body of the first load-bearing portion 104b and the second light-emitting element 101b is provided as a concave portion. In the longitudinal direction, the light-emitting device of the present embodiment is provided with a concave portion in comparison with the mounting portion of the sequential member, the mounting portion of the second light-emitting element, the optical device, and the like, and the influence on the light distribution property can be reduced. Further, for example, the size and depth of the concave portion forming the light transmissive member are similar ratios of the outer shape of the semiconductor element in the concave portion in the opening portion of the concave portion in plan view, and the depth of the concave portion and the half ratio accommodated in the concave portion are from 1 · 0 to 2. 1 4 is better. This is because if the size of the recess of the phase size is too large, the shape and position of the gas member forming the void are accommodated in the recessed portion in the region on which the semiconductor element is mounted. The concave shape of the present embodiment is not limited thereto, and the size and the number of the members, and the depth of the concave portion may be connected between the electrodes, and between the six portions 10b and 4b of the optical element 10 1 a. Thereby, the shape of the support body in which the first light-emitting recessed portion is supported is supported from the upper surface, and when the cavity is simultaneously formed on the support body, the outer shape and the overhead capacity are from 1.  0 to 2. 5. The height of the conductor element is also increased in the bubble of the semiconductor element, so that the bubble such as the heart of -23-200921949 is thermally expanded by the heat generation of the light-emitting element, and the reliability and optical characteristics are lowered. When a glass epoxy substrate having a glass component of epoxy a and a base made of ceramics are required to have high contrast in a light-emitting device, the insulating base material is preferably made of Cr203 or Mn02. , Fe203 and other pigments, so that the board is better to become a dark color. Alternatively, in order to impart an increase in the transmittance of the insulating substrate, it is preferable to contain a white pigment such as titanium dioxide. In particular, when it is desired to have heat resistance and high light resistance, it is preferable to use a base material of a ceramic substrate. The main material of ceramics, alumina and nitride, is preferred. A sintering aid or the like is added to these main materials to obtain a ceramic substrate. For example, it can be mentioned that the amount of the raw material powder is 9%, which is the sintering aid, and the clay, talc, magnesia, calcium oxide, and vermiculite of 4 to 10 weight ratio are added, and: ~1 7 0 〇 ° c temperature range of the sintered ceramic, or the raw material 4 〇 ~ 60 weight percent is alumina, as a sintering aid, add 40% by weight of borosilicate glass, cordierite, forsterite, etc. Moreover, the ceramic substrate which is sintered in the temperature range of 800 to 120 (TC can be formed in the shape of the printed circuit board before firing. Therefore, the concave substrate having the present embodiment can be easily formed. In addition, conductor wiring of various patterns can be formed at the stage of the printed circuit board before firing. For example, a material containing tungsten is screen-printed to form a metal material for use as a conductor wiring and a mounting portion of the element. The base layer is in the base layer of the luminescent resin. The light-reflective base of the substrate is aluminum, more than sintered - 96 weight percent 1500 powder [] 6 0 ~ mullite porcelain, etc. . For the adhesive semiconductors that are made in various parts, the material of the ceramics of the period -24-200921949 is fired, and then the metal material of the outermost surface is arranged by gold plating or sputtering using silver, gold or aluminum. The surface is coated with a metal material. The metal material has a high reflectance for light from the light-emitting element. (Translucent member) The material of the light-transmitting member is not particularly limited. For example, an anthrone resin or an epoxy resin can be used. A translucent resin having excellent weather resistance, such as a urea resin, a fluororesin, and a mixed resin containing at least one of these resins. The translucent member is not limited to an organic material, and an inorganic material having excellent light resistance such as glass or silicone rubber may be used. Further, in the light-transmitting member of the present embodiment, a member corresponding to the use such as a viscosity extender, a light diffusing agent, a pigment, a fluorescent material, or the like may be added. For example, a coloring agent corresponding to the luminescent color of the light-emitting device may be added. Examples of the light diffusing agent include barium titanate, titanium oxide, aluminum oxide, cerium oxide, calcium carbonate, and at least A mixture of the above-mentioned components, etc., can also have a lens effect by forming the light-emitting surface side of the light-transmitting member into a desired shape. Specifically, in addition to the flat shape, the convex lens shape, and the concave lens shape, It is possible to form a shape in which an elliptical shape or a plurality of the above-described shapes are formed from the light-emission observation surface. (Fluorescent material) The light-emitting device of the present embodiment can contain a fluorescent material in the light-transmitting member. As an example of such a fluorescent material, There is a fluorescent substance containing a rare earth element as described below. -25- 200921949 Specifically, at least one element selected from the group consisting of lanthanum, Lu, Sc, La, Gd, Tb, and Sm and from Al, A garnet-type fluorescent substance of at least one element selected from Ga and In groups. In particular, the aluminum garnet-based phosphor is at least one halogen containing A1 and selected from Y, Lu, Sc, La, Gd, Tb, Eu, Ga, In, and Sm, and is used from a rare earth element. The phosphor that is activated by at least one of the selected elements is a phosphor that excites light by visible light or ultraviolet light emitted from the light emitting element. For example, Tb2 is used in addition to a lanthanum aluminum oxide-based phosphor (YAG-based phosphor). 95Ce 〇. 〇 5AI5O12, Y2. 9. Ce 〇. 〇5Tb 〇. 〇 5AI5O12, Y 2 .  9 4 C e ο .  ο 5 Ρ Γ q .  Q ! A 1 5 Ο 1 2, Y 2. 9. C e ο . . 5 P r ο .  ο 5 A 1 5 ◦ 1 2 and so on. Among them, in particular, in the present embodiment, two or more kinds of lanthanum aluminum oxide-based phosphors containing Y and starting with Ce or pr and having different compositions are used. Further, the nitride-based phosphor contains N and contains at least one element selected from Be, Mg, Ca, Sr, Ba, and Zn and from C, S i , Ge, Sn, Ti, Zr, and Hf. At least one element selected in the group, the phosphor activated by at least one element selected from the group consisting of rare earth elements. As the nitride-based phosphor, for example, (SrQ. 97EU(). Q3) 2Si5N8, (Ca〇. 9 8 5 Eu〇. 〇 15 ) 2Si5N8 ' ( S r〇.  6 7 9 C a〇 .  2 9,E u〇 .  〇 3 ) 2 S i 5N 8 and the like o Hereinafter, the embodiment of the present invention will be described in detail. Moreover, it is needless to say that the present invention is not limited to the embodiments shown below. Fig. 1 is a top plan view schematically showing a light-emitting device 1 〇 0 in the present embodiment. Fig. 2 is a cross-sectional view schematically showing a cross section when the light-emitting device 丨00 of the figure is cut in the π-π direction. Fig. 3 is a cross-sectional view schematically showing a cross section of the illuminating device loo shown in Fig. 1 taken along the m-gull direction of -26-200921949. Further, Fig. 4 is a bottom view schematically showing the light-emitting device 10 of the present embodiment. Fig. 5 is a perspective view schematically showing the light-emitting device 10 () of the present embodiment. As shown in FIG. 1, the light-emitting device 10A of the present embodiment includes a flat-shaped support body 108 having a first electrode 104a and a second electrode 104c that supply electric power to the light-emitting elements, and is provided on the support body 108. The plurality of light-emitting elements 101a and 101b' disposed as the mounting portion of the surface metal member 104b connect the electrodes of the first light-emitting element 10a and the second light-emitting element i〇1b and the first electrode 104a and the second electrode 10b The second conductive wire 106' of 4c and the light transmissive member 107 of the light-emitting element 10a, lb and the second conductive wire 1 〇6. The light-emitting element of the present embodiment is an L E D wafer 〇 1 a, i 〇 1 b of two blue-emitting lights made of a gallium nitride-based compound semiconductor. These LED wafers have a rectangular shape of 500 μm χ 290 μm (length X width) when viewed from the upper surface, and a eutectic containing Au and Sn as a material is disposed on the bottom surface side. These LED chips are respectively bonded to the mounting portion by a eutectic material, and the mounting portion is made of silver provided on the upper surface of the support as the outermost surface. On the insulating substrate made of ceramic, the support is made of tungsten as a base layer, and nickel, gold and silver are sequentially plated. By the arrangement of these metal materials, the electrodes and the metal members 1 〇 4 b are formed. Further, on the upper surface of the insulating substrate, the support 1 〇 8 is provided with a recessed portion 103 having an opening in a region sandwiched between the LED chip 101a and the two mounting portions of the LED chip 1 〇 1 b. In the recess 103, a protective element 1? 2 for protecting the LED chips 101a, 101b from overvoltage is housed. Further, the light-emitting device of the present embodiment has a lower surface of the light transmissive member 107 that covers the opening portion of the recessed portion -27-200921949 103, and an upper surface of the protective member 102 that is housed in the recess portion 103. Cavity 1 1 1 The protective element 102 of the present embodiment is an arrester diode having electrodes of different polarities on the upper surface and the bottom surface. The silver adhesive is used as the conductive adhesive, and the protective member 102 is bonded to the bottom surface of the concave portion 103. The electrode on the bottom surface side is connected to the conductor wiring exposed on the bottom surface of the concave portion 103 by a conductive adhesive. Further, the electrode of the upper surface of the protective member 102 is connected to the first electrode 104a provided on the upper surface of the support through the first conductive wire 105. As shown in FIG. 1, the support body 108 of the present embodiment has: positive and negative electrodes (first electrode 104a and second electrode) connected to the light-emitting element through the second conductive wire 106 on the upper surface of the light-emitting element 104c); and a metal member 104b insulated from the electrodes and disposed on the upper surface of the same support. The two LED chips 101a and 101b are mounted on the metal member 10b provided separately from the electrodes. Thereby, the heat dissipation path can be provided separately from the arrangement pattern of the conductor wirings connecting the electrodes on the support, so that a light-emitting device having high heat dissipation can be obtained. As shown in FIG. 4, the light-emitting device 100 of the present embodiment has a pair of side faces facing each other in the longitudinal direction of the support body 108 as viewed from the back side thereof, and the support body 108 faces from the inner portion of the slit portion. The central portion of the center is provided with a first external connection electrode 1 1 〇a and a second external connection electrode 1 1 0c. In order to be connected to the respective semiconductor elements, the first external connection electrodes 11a and the second external connection electrodes 110c and the first electrodes 104a and 12c disposed on the upper surface -28-200921949 of the support 108 and The electrode disposed on the concave surface is turned on. That is, the first external connection electrode 110a and the connection electrode 1 1 〇c are electrically connected by the conductor wiring first electrode 104a and the second electrode 104a embedded in the support body. The first outer electrode 11a and the second outer connecting electrode 11a are connected to each other by the solder when the light-emitting tin is mounted on the external wiring board. As shown in Fig. 2 and Fig. 3, the cavity 1 1 1 of the present embodiment is formed by the process of the light-transmitting member 107 of the light-emitting device 100 of the embodiment remaining in the concave portion 103. In other words, after the semiconductor elements are supported and the electrodes are connected by a conductive wire, an fluorenone resin containing a YAG-based phosphor is coated to cover the openings of the light-emitting elementary wires and the recesses. The manufacturing method of this embodiment is slightly described as follows. First, a plurality of L E D wafers are arranged on a support/collecting substrate of a material in which ceramic is an insulating substrate, and then electrically connected by a conductive wire or the like to the protective member 103. The silver adhesive is an adhesive, and the protective member 103 is bonded to the conductor wiring on the bottom surface, and the electrode adhesive on the bottom surface of the protective member 1 〇 3 is electrically connected to the conductor wiring. Next, the fluorenone resin of the j-based phosphor is arranged linearly along the arrangement of the L E D wafer so as to cover the openings of the plurality of LED chips, the wires, and the recesses. At this time, the viscosity of the fluorenone resin containing YAG was 300 Pa·s. In addition, in the second outer portion of the bottom portion of the present embodiment, the wire bonding substrate is connected to the portion of the electrode assembly 100, and the portion of the body 1010 that is printed by the printing member or the conductive optical device is accommodated. Moreover, the protective element -29-200921949 with a silver-glued* YAG conductive conducting phosphor in the concave portion has an outer dimension of 240 μm; The square of <240 μιη, when disposed on the bottom surface of the concave portion, is 〇. 14 mm. When such a large protective element is housed in the concave portion, the outer shape of the opening portion of the concave portion is a square having a side of 0.24 mm or more and 0.60 mm or less, and the depth from the upper surface of the opening portion to the bottom surface of the concave portion is 0.15 mm or more and 0.30 mm or less. good. In the present embodiment, the outer diameter of the opening of the concave portion is a square of 0.50 mm x 0.50 mm, and the depth is 〇1.5 mm. Further, after the fluorene ketone resin is cured, the light-transmitting member and the insulating substrate are cut by dicing, and the varnish is cut into a predetermined size to obtain the light-emitting device 1 of the present embodiment. Moreover, marks (including marks of a straight line or an L-shape) formed respectively on the four corners or sides of the rectangle forming the outer shape of the upper surface of the support 108 can be used as identification to identify positive and negative pairs disposed on the light-emitting device 100. In addition to the polarity of the external connection electrodes 1 1 〇a and 1 1 0 C, it can also be used as a symbol showing the dicing line when the dicing collective substrate is diced. The present invention can be used for a light source for illumination, a light source for various indicators, a light source for a vehicle, a light source for a display, a light source for backlight of a liquid crystal, or the like. The invention will be apparent to those of ordinary skill in the art in the description and description of various preferred embodiments. It is to be understood that the invention is not to be construed as limited to The invention is susceptible to various modifications and changes within the scope of the invention as defined by the appended claims. The present application is based on Japanese Laid-Open Patent Publication No. Hei. No. 2007-188709, filed on Jul. 19, 2007, and Japanese Patent Application No. 2007-335793, filed on Dec. 27, 2007. -30- 200921949 [Schematic Description of the Drawings] Fig. 1 is a top view schematically showing a light-emitting device according to an embodiment of the present invention. Fig. 2 is a cross-sectional view showing a cross section of the light-emitting device in the π-π direction shown in the schematic display. Fig. 3 is a cross-sectional view showing a cross section of the light-emitting device in the direction of the melon-cucumber shown in the figure. Fig. 4 is a bottom plan view schematically showing a light-emitting device in an embodiment of the present invention. Fig. 5 is a perspective view schematically showing a light-emitting device in an embodiment of the present invention. Fig. 6 is a cross-sectional view schematically showing a cross section of a light-emitting device according to another embodiment of the present invention. [Description of main component symbols] 100, 200 light-emitting device (light: emitting: device) 101a, 101b, light-emitting device (light: emitting: element) 102: semiconductor device (semiconductor: element) 103: cavity (cavity) 104a : first electrode 104b: metallic member (component) 1 04c: second electrode 105: first conductive wire -31 - 200921949 106 : 107 : 108: 109: 110a 110c 111: 112: second conductive wire is transparent Translucent: member (base) mark (mark): first external connection electrode: second external connection electrode cavity (cavity) protrusion (protuberance) -32-

Claims (1)

200921949 十、申請專利範圍 1. 一種發光裝置，其特徵在於，具備： 具有電極的發光元件； 和配置發光元件之同時，設置電極之封裝； 前述封裝更具備： 具有配置前述發光元件的搭載部及容納與前述發光元 件不同的半導體元件的凹部之支撐體； 和配置於支撐體上的透光性構件； 和連接設置在封裝的電極和前述發光元件的電極之導 電性導線； 其中，前述透光性構件乃被覆至少前述發光元件和前 述凹部的開口部， 前述封裝乃在前述凹部具有空洞。 2. 如申請專利範圍第1項記載的發光裝置，其中， 前述空洞乃設置在被覆前述凹部的開口部的透光性構 件的底面、和容納在前述凹部的半導體元件的上面之間。 3 ·如申請專利範圍第1項記載的發光裝置，其中， 前述透光性構件乃從前述凹部的開口部向前述凹部的 底面，具有凸狀的突出部。 4. 如申請專利範圍第1項記載的發光裝置，其中， 前述凹部乃設置在挾於前述發光元件的複數搭載部的 區域，前述支撐體乃在前述搭載部的略正下方，分別具備 外部連接電極。 5. 如申請專利範圍第1項記載的發光裝置，其中， -33- 200921949 令前述凹部的開口部平面所視外形、與令容納在前述 凹部的半導體元件平面所視的外形的相似比爲1.0到2.5 〇 6· —種發光裝置的製造方法，具備發光元件 '和配 置該發光元件的封裝、和連接設置在該封裝上的電極和前 述發光元件的電極的導電性導線；前述封裝具備至少被覆 前述發光元件的透光性構件、及具有配置前述發光元件的 搭載部及容納與前述發光元件不同的半導體元件的凹部之 支撐體的發光裝置的製造方法，其特徵在於，包含： 形成具有在搭載前述發光元件的上面加以開口的凹部 的支撐體之第一工程； 和令前述發光元件的上面，配置於較前述發光元件之 搭載部的上面爲下處，在前述凹部容納前述半導體元件之 第二工程； 和配置前述發光元件及前述導電性導線之第三工程； 和在前述凹部內形成空洞，並且將被覆至少前述發光 元件及前述凹部的開口部的透光性構件，配置於前述支撐 體之第四工程。 7-如申請專利範圍第6項記載的發光裝置之製造方 法，其中， 前述第四工程包含對於前述發光元件所搭載的上面， 呈略平行地，連續地供給前述透光性構件的材料的工程。 8 ·如申請專利範圍第7項記載的發光裝置之製造方 法，其中， -34- 200921949 前述透光性構件的材料的黏度乃根據對於前述半導體 元件的前述凹部的大小，在前述第四工程中，使氣泡殘存 在前述凹部地加以調整。 9. 如申請專利範圍第7項記載的發光裝置之製造方 法，其中， 前述透光性構件的材料乃包含選自矽酮樹脂或環氧樹 脂至少一種以上的樹脂，在該樹脂中含有粒子狀螢光體的 材料者。 10. 如申請專利範圍第8項記載的發光裝置之製造方 法，其中， 前述透光性構件的材料的黏度乃20 OPa . s以上、 5 0 0 P a · s 以下。 11_如申請專利範圍第6項記載的發光裝置之製造方 法，其中， 前述凹部的開口部平面所視的外形、與容納在前述凹 部中的半導體元件平面所視的外形的相似比爲1 . 〇到2.5 ’前述凹部的深度、與容納在前述凹部中的半導體元件的 高度的比爲從1.0到2.14。 -35-200921949 X. Patent Application No. 1. A light-emitting device comprising: a light-emitting element having an electrode; and a package in which an electrode is disposed while arranging the light-emitting element; and the package further includes: a mounting portion having the light-emitting element disposed; a support for accommodating a recess of the semiconductor element different from the light-emitting element; and a light-transmitting member disposed on the support; and a conductive wire connecting the electrode provided in the package and the electrode of the light-emitting element; wherein the light-transmitting The functional member covers at least the light-emitting element and the opening of the concave portion, and the package has a cavity in the concave portion. 2. The light-emitting device according to claim 1, wherein the cavity is provided between a bottom surface of the light-transmitting member covering the opening of the concave portion and an upper surface of the semiconductor element housed in the concave portion. The light-emitting device according to the first aspect of the invention, wherein the light-transmitting member has a convex protruding portion from an opening of the concave portion toward a bottom surface of the concave portion. 4. The light-emitting device according to claim 1, wherein the concave portion is provided in a region of the plurality of mounting portions of the light-emitting element, and the support body is externally connected to the mounting portion. electrode. 5. The light-emitting device according to claim 1, wherein -33-200921949, the similarity ratio of the outer shape of the opening portion of the concave portion to the outer shape of the semiconductor element plane accommodated in the concave portion is 1.0. A method for manufacturing a light-emitting device, comprising: a light-emitting element ′, a package in which the light-emitting element is disposed, and a conductive wire connecting an electrode provided on the package and an electrode of the light-emitting element; the package is provided with at least a coating A method of manufacturing a light-emitting device of the light-transmitting element, and a method of manufacturing a light-emitting device having a mounting portion for arranging the light-emitting element and a recess for accommodating a semiconductor element different from the light-emitting element, comprising: forming a first work of the support of the concave portion on which the upper surface of the light-emitting element is opened; and an upper surface of the light-emitting element disposed below the upper surface of the mounting portion of the light-emitting element, and a second portion of the semiconductor element in the concave portion Engineering; and the third work of arranging the aforementioned light-emitting element and the aforementioned conductive wire And a translucent member that forms a cavity in the concave portion and covers at least the light-emitting element and the opening of the concave portion, and is disposed in the fourth process of the support. The method of manufacturing a light-emitting device according to the sixth aspect of the invention, wherein the fourth item includes a material for continuously supplying the light-transmitting member in a direction slightly parallel to the upper surface on which the light-emitting element is mounted. . The method of manufacturing a light-emitting device according to claim 7, wherein the viscosity of the material of the light-transmitting member is based on the size of the concave portion of the semiconductor element in the fourth project. The air bubbles are left in the concave portion to be adjusted. 9. The method of producing a light-emitting device according to claim 7, wherein the material of the light-transmitting member comprises at least one resin selected from the group consisting of an anthrone resin or an epoxy resin, and the resin contains a particulate form. The material of the phosphor. 10. The method of producing a light-emitting device according to claim 8, wherein the material of the light-transmitting member has a viscosity of 20 OPa or more and 500 Å·s or less. In the method of manufacturing a light-emitting device according to the sixth aspect of the invention, the aspect ratio of the outer shape of the opening of the recessed portion and the outer shape of the plane of the semiconductor element accommodated in the recessed portion is one. The ratio of the depth of the aforementioned recess to 2.5' to the height of the semiconductor element accommodated in the aforementioned recess is from 1.0 to 2.14. -35-
TW97125901A 2007-07-19 2008-07-09 Light emitting device and method of manufacturing the same TW200921949A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007188709 2007-07-19
JP2007335793A JP4241870B2 (en) 2007-07-19 2007-12-27 Light emitting device and manufacturing method thereof

Publications (2)

Publication Number Publication Date
TW200921949A true TW200921949A (en) 2009-05-16
TWI357671B TWI357671B (en) 2012-02-01

Family

ID=40269053

Family Applications (1)

Application Number Title Priority Date Filing Date
TW97125901A TW200921949A (en) 2007-07-19 2008-07-09 Light emitting device and method of manufacturing the same

Country Status (5)

Country Link
JP (1) JP4241870B2 (en)
KR (1) KR100958509B1 (en)
CN (1) CN101350346B (en)
HK (1) HK1127161A1 (en)
TW (1) TW200921949A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8541799B2 (en) 2010-05-31 2013-09-24 Advanced Optoelectronic Technology, Inc. Light-emitting element package and fabrication method thereof
TWI449223B (en) * 2010-11-02 2014-08-11 Hon Hai Prec Ind Co Ltd Light emitting diode lead frame
TWI550904B (en) * 2011-05-27 2016-09-21 晶元光電股份有限公司 System and methods providing semiconductor light emitters

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010028049A (en) * 2008-07-24 2010-02-04 Kyocera Corp Light-emitting device and lighting system
JP5351723B2 (en) 2009-05-22 2013-11-27 シャープ株式会社 Light source device and display device
CN102428316A (en) * 2009-05-22 2012-04-25 夏普株式会社 Light Reflecting Sheet, Light Source Device, And Display Device
JP4519944B1 (en) 2009-05-22 2010-08-04 シャープ株式会社 Light source device and display device
JP4621799B1 (en) 2009-05-22 2011-01-26 シャープ株式会社 Light reflecting sheet, light source device and display device
US9433046B2 (en) 2011-01-21 2016-08-30 Once Innovations, Inc. Driving circuitry for LED lighting with reduced total harmonic distortion
JP5583051B2 (en) * 2011-02-23 2014-09-03 京セラ株式会社 Light emitting element mounting substrate and light emitting device
KR101823506B1 (en) 2011-06-29 2018-01-30 엘지이노텍 주식회사 Light emitting device and light unit having thereof
CN104066319B (en) 2011-12-14 2017-09-05 万斯创新公司 aquaculture lighting device and method
WO2013090708A1 (en) 2011-12-14 2013-06-20 Once Innovations Inc Light emitting system with adjustable watt equivalence
CN103999210B (en) * 2011-12-22 2016-11-02 京瓷株式会社 Circuit board and electronic installation
US20140001948A1 (en) * 2012-06-29 2014-01-02 Nitto Denko Corporation Reflecting layer-phosphor layer-covered led, producing method thereof, led device, and producing method thereof
US9554562B2 (en) 2014-08-07 2017-01-31 Once Innovations, Inc. Lighting system and control for experimenting in aquaculture
KR101724048B1 (en) * 2015-05-14 2017-04-06 (주)포인트엔지니어링 Light engine for luminous element
KR102423236B1 (en) * 2015-09-03 2022-07-20 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 light emitting device package
KR102522798B1 (en) * 2016-02-26 2023-04-18 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 Light emitting device package, light emitting module and display device having the same
US11044895B2 (en) * 2016-05-11 2021-06-29 Signify North America Corporation System and method for promoting survival rate in larvae
JP6680302B2 (en) * 2018-01-10 2020-04-15 日亜化学工業株式会社 Light emitting device
CN110081323B (en) * 2018-05-23 2021-08-31 浙江山蒲照明电器有限公司 LED filament and LED bulb
US11152553B2 (en) 2019-01-15 2021-10-19 Seoul Viosys Co., Ltd. Light emitting device package and display device having the same
EP3706262B1 (en) * 2019-02-15 2022-01-26 Nichia Corporation Method of manufacturing light emitting device, light emitting device, and base member

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11112036A (en) 1997-09-30 1999-04-23 Sharp Corp Surface mounting semiconductor device
JP2004207363A (en) * 2002-12-24 2004-07-22 Kyocera Corp Package for housing light emitting element and light emitting device
JP4307090B2 (en) * 2003-01-27 2009-08-05 京セラ株式会社 Light emitting element storage package and light emitting device
JP2004363185A (en) 2003-06-02 2004-12-24 Stanley Electric Co Ltd Optical communication module

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8541799B2 (en) 2010-05-31 2013-09-24 Advanced Optoelectronic Technology, Inc. Light-emitting element package and fabrication method thereof
US8828755B2 (en) 2010-05-31 2014-09-09 Advanced Optoelectronic Technology, Inc. Light-emitting element package and fabrication method thereof
TWI449223B (en) * 2010-11-02 2014-08-11 Hon Hai Prec Ind Co Ltd Light emitting diode lead frame
TWI550904B (en) * 2011-05-27 2016-09-21 晶元光電股份有限公司 System and methods providing semiconductor light emitters

Also Published As

Publication number Publication date
KR20090009160A (en) 2009-01-22
CN101350346B (en) 2010-06-02
KR100958509B1 (en) 2010-05-17
TWI357671B (en) 2012-02-01
JP2009044116A (en) 2009-02-26
CN101350346A (en) 2009-01-21
HK1127161A1 (en) 2009-09-18
JP4241870B2 (en) 2009-03-18

Similar Documents

Publication Publication Date Title
TWI357671B (en)
US10141491B2 (en) Method of manufacturing light emitting device
EP2017892B1 (en) Light emitting device and method of manufacturing the same
TWI481077B (en) Semiconductor light emitting device and manufacturing method of semiconductor light emitting device
JP5345363B2 (en) Light emitting device
JP4753904B2 (en) Light emitting device
JP5538671B2 (en) Light emitting device and LED lamp
JP5972419B2 (en) Light emitting device and lighting apparatus
JP2009290244A5 (en)
JP2009290244A (en) Light emitting device and method of manufacturing the same
JP6579141B2 (en) Light emitting device and method for manufacturing light emitting device
JP2010251775A (en) Light emitting device
JP5077282B2 (en) Light emitting element mounting package and light emitting device
JP5223726B2 (en) Light emitting device
JP2007258620A (en) Light emitting device
US20110186975A1 (en) Semiconductor package and manufacturing method thereof
JP5730711B2 (en) Light emitting device
JP2008244468A (en) Light-emitting device
JP6402914B2 (en) Method for manufacturing light emitting device
JP2014158052A (en) Light emitting device and method of manufacturing the same
JP6242437B2 (en) Light emitting device
JP6030193B2 (en) Light emitting device substrate
JP2020150286A (en) Light emitting device