TWI354864B - - Google Patents

Download PDF

Info

Publication number
TWI354864B
TWI354864B TW93128914A TW93128914A TWI354864B TW I354864 B TWI354864 B TW I354864B TW 93128914 A TW93128914 A TW 93128914A TW 93128914 A TW93128914 A TW 93128914A TW I354864 B TWI354864 B TW I354864B
Authority
TW
Taiwan
Prior art keywords
ring
group
photosensitive composition
violet laser
blue
Prior art date
Application number
TW93128914A
Other languages
Chinese (zh)
Other versions
TW200521624A (en
Inventor
Junji Mizukami
Yasuhiro Kameyama
Eriko Toshimitsu
Yuji Mizuho
Original Assignee
Nippon Synthetic Chem Ind
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Synthetic Chem Ind filed Critical Nippon Synthetic Chem Ind
Publication of TW200521624A publication Critical patent/TW200521624A/en
Application granted granted Critical
Publication of TWI354864B publication Critical patent/TWI354864B/zh

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/027Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G03F7/031Organic compounds not covered by group G03F7/029

Description

1354864 ⑴ 九、發明說明 【發明所屬之技術領域】 . 本發明係有關可用於形成印刷配線板、液晶顯示元件 . 、電漿顯示器、大規模集成電路、薄型電晶體、半導體封 裝、彩色濾光片 '有機電致發光元件等之導體電路或電極 加工基板等之蝕刻或電鑛光阻等之負型藍紫色雷射感光性 組成物’特別是適用於波長390至430nm之藍紫色雷射光 之直接描繪的負型藍紫色雷射感光性組成物及及使用該組 φ · 成物之圖像形成材料、圖像形成材及圖像形成方法。 - 【先前技術】 以往,形成印刷配線板、液晶顯示元件、電漿顯示器 、大規模集成電路、薄型電晶體、半導體封裝、彩色濾光 片、有機電致發光元件等之導體電路或電極加工基板等之 感光性組成物有以下兩種類型。換言之,負型感光性組成 物之代表例如由乙烯性不飽和化合物 '光聚合引發劑及含 春 羧基樹脂等之鹼可溶性樹脂所構成,藉由光聚合乙烯性不 飽和化合物產生聚合、硬化,成爲不溶於鹼顯像液之組成 * 物’聚乙烯苯酚樹脂等含酚性羥基樹脂與該樹脂之交聯劑 _ 或含環氧基之酚醛樹脂等含酸交聯性基的樹脂及鹵甲基化 s-三嗪衍生物等之光酸產生劑所構成,以光照射使光酸產 生劑所產生之酸產生交聯成爲不溶於鹼顯像液之組成物等 爲人所知。正型感光性組成物之代表例如含烷氧基等之酸 分解性基之聚乙烯基苯酚樹脂等含酸解性基樹脂與鹵甲基 -5- (2) 1354864 化s -三嗪衍生物等之光酸產生劑所構成,以光照射 產生劑所產生之酸產生交聯成爲不溶於鹼顯像液之 等爲人所知。 形成導體電路或電極加工基板等時,係(1) 薄膜上形成由這些感光性組成物所構成之層,然後 光性組成物層表面以被覆薄膜覆蓋之乾薄膜光阻材 離,在被加工基板上層合圖像形成材或被加工基板 形成感光性組成物層,必要時,其上設置保護層之 成材,這些之感光性組成物層通過描畫有電路或電 之光罩薄膜進行圖像曝光。(2)接著將光罩薄膜 (3) 設置假支持薄膜或保護層時,將該保護層等 (4) 負型之非圖像部之曝光部,正型之非圖像部 部以鹼顯像液溶解除去,形成與電路圖型對應之光 。(5 )以此光阻圖像爲光罩,對被加工基板進行 工或電鍍加工等,然後除去光阻圖像,於被加工基 成被描畫於光罩薄膜之電路或電極圖型之微影法已 應用。 又,近年以雷射光用於曝光光源,而不使用光 ’可由電腦等數位資訊直接形成圖像之雷射直接描 因可提高生產性及解像性、位置精準性等而廣受注 此即使微影法也如否如荼硏究雷射光之利用。該雷 如有已知之紫外光至紅外光之各種光源,但是可用 曝光之雷射光從輸出、安定性、感光能力及成本等 以氬離子雷射、氦氖離子雷射、YAG雷射及半導體 使光酸 組成物 假支持 將該感 予以剝 上直接 圖像形 極圖型 剝離。 剝離。 之曝光 阻圖像 蝕刻加 板上形 被廣泛 罩薄膜 繪法, 目,因 射光例 於圖像 觀點, 雷射等 (3) (3)1354864 產生自可見光至紅外光領域的光爲主。例如使用波長 488nm之氬離子雷射 '波長532nm之FD-YAG雷射之微影 法已達實用化,印刷配線基板用途之3 65nm之UV雷射的 材料已有販售。 但是以往之感光性組成物在雷射光之直接描繪法中, 感度仍不足’且可見雷射光下’感光性組成物之黃色燈下 之安全燈性差’必須在紅色照明之暗室環境下工作。然而 ,近年雷射技術進步顯著,而使用可在黃色燈照明之明亮 環境下工作,且於藍紫色領域可安定振蕩之半導體雷射。 但是因其輸出力低於其他可視光領域等’且感光性組成物 之感度方面仍有改良的餘地’特別是無法得到感光性組成 物層之膜厚較厚之狀態下使用之光阻材所能得到之圖像之 高解像度、矩形性等’而即使直接描繪法及微影法也無法 實用化的水準。 感光性組成物例如欲提藍紫色領域之感度等,提案一 種在芳香環上具有至少一個乙烯基’其鄰位及對位之至少 一個被硫原子取代之化合物爲增感劑’與聚合引發劑之茂 鈦系化合物之組合之平版印刷版用之光聚合性組成物(例 如參照日本特開2002-169282號公報)等。但是這些感光 性組成物之光阻材’特別是經由乾膜光阻材,於被加工基 板上所形成之感光性組成物層中’膜厚較厚爲ΙΟμηι以上 。印刷電路配線基板等之製造步驟之電鍍步驟,近年隨著 配線線寬微小化’而需要更厚的電鍍厚度,藍紫色領域之 感度仍有改良的空間。另外’也有高感度之黃色燈光下之 -7- (4) (4)1354864 *降低的問題。 另外,也嘗試將前述與UV雷射對應之材料用於藍紫 色雷射光,但是高感度類型所能得到的圖像之解像性及矩 形性差,高解像度類型者之感度差。 【發明內容】 〔發明之揭示〕 本發明係有鑑於以往技術而完成者,本發明之目的係 提供對於藍紫色領域之雷射光爲高感度,黃色燈下之安全 燈性優,同時所得之圖像之解像性及矩形性優異,特別是 可作爲乾薄膜光阻材之感光層使用,且適用於藍紫.色雷射 光之直接描繪之藍紫色雷射感光性組成物。另外,本發明 之目的係提供使用該組成物之圖像形成材料、圖像形成材 及圖像形成方法。 本發明人等爲了解決上述問題而精心硏究結果發現藍 紫色雷射光之曝光量與殘膜率或同曝光量與顯像速度具有 特定關係之感光性組成物可達成前述目的,遂完成本發明 〇 換言之’本發明之主要技術特徵爲一種負型藍紫色雷 射感光性組成物,其特徵係藉由藍紫色雷射光之曝光,使 殘膜率成爲90%以上之最小曝光量爲4〇mJ/cm2以下,曝 光部之殘膜率〔t(%)〕對藍紫色雷射光之曝光量之對 數〔logE ( nuT/cm2 )〕所描繪之殘膜率·曝光量曲線之殘 膜率之15%的點與80%的點所連結之下述式(〗)之直線 (5) 1354864 的γ値爲4.0M02以上, t = ylogE + 5 ( 1 )。 另外’本發明之主要技術特徵爲一種負型藍 感光性組成物’其特徵係藉由藍紫色雷射光之曝 膜率成爲90%以上之最小曝光量爲4〇mJ/cm2以 光部之殘膜率〔t(%)〕計算得到之溶解膜率 . % )〕被顯像時間〔T ( sec )〕除之顯像速度 . Ο71" ( % /sec )〕對藍紫色雷射光之曝光量之對 (mJ/cm2 )〕所描繪之顯像速度-曝光量曲線之 速度之80%的點與20%的點所連結之下述式(: 的α値爲1 2以上, s=-alogE+p ( 2)。 這種感光性組成物係以乙烯性不飽和化合物 引發劑爲基本組成之負型之感光性組成物(以下 光聚合性組成物),該組成物中之聚合抑制劑爲 量,更理想爲特定之吸收波長範圍內具有極大吸 物作爲增感劑使用來達成本發明之目的。換言之 之理想的形態係上述感光性組成物爲以乙烯性不 物及光聚合引發劑爲基本組成之負型,該感光性 聚合抑制劑之含量爲5〜60ppm。其他較佳之形 感光性組成物含有作爲增感劑之3 3 0至4 5 0 n m之 內具有極大吸收的化合物》 光聚合性組成物係在光聚合性組成物中含有 之賦予乙烯性不飽和化合物在製造時防止聚合或 紫色雷射 光,使殘 下,由曝 〔100-t ( 〔s={]00-數〔logE 最大顯像 )之直線 及光聚合 有時稱爲 特定之少 收的化合 ,本發明 飽和化合 組成物之 態係上述 波長範圍 必須成分 製品之保 -9- (6) (6)1354864 存安定性之聚合抑制劑。對於賦予光聚合性組成物層形成 性等之高分子結合材,在製造時視情況可添加聚合抑制劑 ’爲了防止光聚合性組成物之熱聚合或經時聚合等,被添 加於乙烯性不飽和化合物或高分子結合材之聚合抑制劑外 ’依其量之多寡,確保光聚合性組成物之安定性等,於調 製組成物時所添加之聚合抑制劑之合計含量通常含有 lOOppm以上。因此,光聚合性組成物中之聚合抑制劑之 含量控制在少量乃是違反熟悉該項技藝者的常識。 本發明之主要技術特徵係於假支持薄膜上形成前述負 型藍紫色雷射感光性組成物之層的負型藍紫色雷射感光性 圖像形成材料及於被加工基板上,在其負型藍紫色雷射感 光性組成物層側層合該負型藍紫色雷射感光性圖像形成材 及將該負型藍紫色雷射感光性圖像形成材之負型藍紫色雷 射感光性組成物層藉由波長3 90至4 3 0nm之雷射光掃描曝 光,進行顯像處理使產生圖像之圖像形成方法。 發明之效果 本發明係提供對於藍紫色領域之雷射光爲高感度,黃 色燈下之安全燈(safe light )性優,同時所得之圖像之解 像性及矩形性優異。特別是可作爲乾薄膜光阻材之感光層 使用,且適用於藍紫色雷射光之直接描繪之藍紫色雷射感 光性組成物及使用該組成物之圖像形成材料、圖像形成材 及圖像形成方法。 (7) (7)1354864 實施發明之最佳形態 <最小曝光量> 本發明之負型藍紫色雷射感光性組成物(以下,本發 明之負型藍紫色雷射感光性組成物有時僅稱爲藍紫色雷射 感光性組成物)’其係藉由藍紫色雷射光之曝光,使殘膜 率成爲90%以上之最小曝光量爲40mJ/crn2以下者,最小 曝光量爲20mJ/cm2以下較佳,1 omj/cm2以下更佳。殘膜 率成爲90%以上之最小曝光量係將在支持體上所形成之 0.5cmx〇_5cm之大小’膜厚爲5〜100μιη之感光性組成物 層藉由波長4 00至4 1 On m之藍紫色雷射光/曝光量以嘗試 性曝光後,使用2 5 °C之顯像液之〇 · 7重量%碳酸鈉水溶液 以0.15 Mpa噴吹’未曝光之感光性組成物層在同條件之顯 像達到完全溶解之時間(終點)之1 .5倍的時間顯像時, 殘膜率成爲9 0 %以上之最小曝光量。最小曝光量無特別限 定,越低越佳,但是通常爲lmJ/cm2以上。 <殘膜率-曝光量曲線與γ値> 本發明之藍紫色雷射感光性組成物,其殘膜率成爲 90 %以上之最小曝光量爲40mJ/cm2以下,同時曝光部之殘 膜率〔t(%)〕對藍紫色雷射光之曝光量之對數〔i〇gE ( m J / c m2 )〕所描繪之殘膜率·曝光量曲線之殘膜率之丨5 % 的點與80%的點所連結之下述式(1 )之直線的γ値必須 爲4.0 X 1 02以上。γ値理想爲4.5 X 1 〇2以上,特別理想爲 -11 - (8) (8)I354864 5 . Ο χ 1 Ο 2以上,最理想爲γ値必須爲5 . 5 χ 1 Ο2以上。下述式 (1 )之直線中,l〇gE = 0時,t之δ値在本發明中爲無意 義的數値。 t = γ1〇 g Ε + 6 (1)。 γ値未達上述範圍時,有時所得之圖像之解像性及矩 形性差。γ値越大所得之圖像之解像性及矩形性越佳,但 楚上限通常爲1.0x1 〇4。曝光部之殘膜率〔t(%)〕對藍 紫色雷射光之曝光量之對數〔logE ( mJ/cm2 )〕所描繪之 殘膜率-曝光量曲線,理想爲不充分之曝光量領域之殘膜 率顯示幾乎接近〇%的一定値,而殘膜率成爲90%以上之 最小曝光量以上之領域之殘膜率顯示幾乎90%以上之一定 値,其中間曝光量領域,因90%以上之殘膜率形成圖像時 ,仍不足,但是在殘留某程度之殘膜率之臨界曝光量以上 之領域,顯示右上之直線的傾斜。本發明中,殘膜率·曝 光量曲線之中間曝光量領域之直線的傾斜爲殘膜率1 5 %的 點與8 0 %的點所連結之前述式(1 )之直線的斜率γ,且 限定爲特定値以上。換言之,與曝光部鄰接的部分被許多 洩漏光照射,此洩漏光當然爲最小曝光量以下,臨界曝光 量以上,本來不應曝光的部分形成膜,使矩形性變差,然 而使與曝光部鄰接的部分以臨界曝光量以上之洩漏光照射 之中間曝光量領域縮小,可抑制與曝光部鄰接的部分之洩 漏光形成膜。 <顯像速度-曝光量曲線與α値> -12- (9) (9)1354864 本發明之藍紫色雷射感光性組成物,其殘膜率成爲 90%以上之最小曝光量爲40mJ/cm2以下,同時由曝光部之 殘膜率〔t ( % )〕計算得到之溶解膜率〔1〇〇_ t ( % )〕 被顯像時間〔T ( s e c )〕除之顯像速度〔s = { 1 〇 〇 · t} / τ ( % /sec )〕對藍紫色雷射光之曝光量之對數〔丨〇gE( mJ/cm2 )〕所描繪之顯像速度-曝光量曲線之最大顯像速度之80 %的點與20%的點所連結之下述式(2)之直線的α値必 須爲12以上,較佳爲1 3以上,更佳爲14以上。下述式 (2 )之直線中’ logE = 0時’ 5之β値在本發明中爲無意 義的數値。 s = -alogE + P (2) a値未達上述範圍時,有時所得之圖像之解像性及矩 形性差。a値越大所得之圖像之解像性及矩形性越佳,但 是上限通常爲100。由曝光部之殘膜率〔t(%)〕所計算 之溶解膜率〔100- t ( % )〕被顯像時間〔T ( sec )〕除 之顯像速度〔5={100-1}/丁(%/5^)〕對藍紫色雷射光之 曝光量之對數〔logE ( mJ/cm2 )〕所描繪之顯像速度-曝 光量曲線,理想爲不充分之曝光量領域之溶解膜率幾乎接 近1〇〇%,顯像速度爲高水準的一定値,而溶解膜率成爲 I 〇%以下之曝光量以上之領域,顯像速度爲低水準之一定 値’其中間曝光量領域,因溶解膜率成爲1 0°/。以下仍不足 ’但是在某程度之溶解膜率之臨界曝光量以上之領域,顯 示右下之直線的傾斜。本發明中,顯像速度-曝光量曲線 之中間曝光量領域之直線的傾斜爲最大溶解速度(下述進 -13- 1354864 do) 行顯像時,溶解膜率〔100- t ( % ) 〕=0時之顯像速度) 之80%的點與20%的點所連結之前述式(2 )之直線的斜 率α,且限定爲特定値以上。 最大溶解速度係指以下述條件進行顯像時,溶解膜率 〔100-t(%) 〕=100%時之顯像速度。 前述殘膜率-曝光量曲線及顯像速度-曝光量曲線係如 下述所製作的。(!)〇.5cmx〇_5cm之大小,膜厚爲5〜 ΐΟΟμπι之感光性組成物層藉由波長400至410nm之藍紫色 雷射光,改變曝光量以嘗試性曝光。(2)然後,使用顯 像液之0.7重量%碳酸鈉水溶液以25°C、〇.15Mpa噴吹’ 未曝光之感光性組成物層在同條件之顯像達到完全溶解之 時間(* )之1 .5倍的時間顯像時,測定其殘膜率。(3-1 )殘膜率-曝光量曲線係描繪曝光部之殘膜率〔t ( % )〕 對曝光量之對數〔l〇gE ( mJ/cm2 )〕。或(3-2 )顯像速 度·曝光量曲線係描繪由曝光部之殘膜率〔t ( % )〕所計 算之溶解膜率〔100- t ( % )〕被顯像時間〔T ( sec )〕 除之顯像速度〔s={100-t}/T(%/Sec)〕對曝光量之對數 (logE( mJ/cm2)]。 <增感劑> 本發明之藍紫色雷射感光性組成物爲了具有前述殘膜 率-曝光量特性或前述顯像速度·曝光量特性及前述最小曝 光量時,含有感光性組成物接受活性光線之照射時,該光 激發能傳遞至後述之光聚合引發劑、光酸產生劑等活性化 -14- (11) (11)1354864 合物,該活性化合物產生分解,具有產生自由基、酸等活 性種之增感功能之增感劑,例如在3 3 0至4 5 Onm之波長範 圍內具有極大吸收的化合物較佳。 增感劑例如有(i)日本特開2000-10277號公報、特 願2002-362326號說明書等之下述式爲基本骨架之二胺基 苯甲酮系化合物、(ii)日本特開2004-198446號公報等 之下述式爲基本骨架之胺基苯基·苯並咪唑/苯並二唑/苯並 噻唑系化合物、(iii)特願2004-424180號說明書等之下 述式爲基本骨架之磺醯基亞胺系化合物、(iv)特願 2003-3 92404號說明書等之下述式爲基本骨架之胺基D奎諾 系化合物、(v)日本特開2002-169282號公報、特開 20〇4“ 9 1 93 8號說明書等之下述式爲基本骨架之部花青系 化合物、(vi)日本特開2002-2682 3 9號公報說明書等之 下述式爲基本骨架之噻唑酮系化合物、(vii)特願2003-29 1 606號說明書等之下述式爲基本骨架之醯亞胺系化合物 、(viii)下述式爲基本骨架之胺基苯基-苯並咪唑/苯並二 唑/苯並噻唑系化合物、(ix)下述式爲基本骨架之三唑系 化合物、(X)下述式爲基本骨架之氰基苯乙烯系化合物 、(xi)下述式爲基本骨架之芪系化合物、(xii)下述式 爲基本骨架之噁二唑/噻二唑系化合物、(xiii)下述式爲 基本骨架之吡唑啉系化合物、(Xiv)下述式爲基本骨架 之香豆素系化合物、(χν)特願2004-2189】5號說明書等 之下述式爲基本骨架之三苯胺系化合物、(xvi)下述式 爲基本骨架之吖酮系化合物等。 -15- (12) 1354864 下述式中,X及Z係各自獨立之氮原子、氧原子、硫 原子或C-R,而Y係任意之連結基,η爲0以上之整數, 表示基本骨架之下述式之化合物係分別可具有例如烷基、 環院基、烯基、環烯基、烷氧基、烷硫基、芳基、芳氧基 '芳院基、烯氧基、烯硫基、醯基、醯氧基、胺基、醯基 胺基、羧基 '羧酸酯基、胺基甲酸酯基、胺基甲醯基、胺 礦酿基、磺酸酯基、飽和或不飽和之雜環基等之取代基, 這些取代基還可具有取代基,多數之取代基彼此可鍵結形 成環狀結構。 (ii (iv) (v)1354864 (1) IX. Description of the Invention [Technical Fields of the Invention] The present invention relates to the use of a printed wiring board, a liquid crystal display element, a plasma display, a large scale integrated circuit, a thin transistor, a semiconductor package, a color filter. 'Negative blue-violet laser photosensitive composition such as etching of a conductor circuit or an electrode processing substrate such as an organic electroluminescence element, or an electro-mineral photoresist, etc.' is particularly suitable for direct use of blue-violet laser light having a wavelength of 390 to 430 nm. A negative blue-violet laser photosensitive composition and an image forming material, an image forming material, and an image forming method using the set of φ·products. - [Prior Art] Conventionally, a conductor circuit or an electrode processing substrate which forms a printed wiring board, a liquid crystal display element, a plasma display, a large scale integrated circuit, a thin transistor, a semiconductor package, a color filter, an organic electroluminescence element, or the like There are two types of photosensitive compositions. In other words, the representative of the negative photosensitive composition is composed of, for example, an ethylenically unsaturated compound, a photopolymerization initiator, and an alkali-soluble resin containing a carboxyl group-containing resin, and is polymerized and cured by photopolymerization of an ethylenically unsaturated compound. Composition insoluble in alkali imaging liquid * Resin containing phenolic hydroxy resin such as polyvinyl phenol resin and crosslinking agent of the resin _ or acid-crosslinking group-containing resin such as epoxy group-containing phenol resin and halomethyl group A photoacid generator such as an s-triazine derivative is known, and it is known that a light generated by a photoacid generator is crosslinked by light irradiation to form a composition insoluble in an alkali developing solution. Representative examples of the positive photosensitive composition include an acid-soluble base resin such as a polyvinylphenol resin containing an acid-decomposable group such as an alkoxy group, and a halomethyl-5-(2) 1354864 s-triazine derivative. It is known that the photoacid generator is formed by crosslinking the acid generated by the light irradiation generating agent to be insoluble in the alkali developing solution. When a conductor circuit, an electrode processing substrate, or the like is formed, a layer composed of these photosensitive compositions is formed on the film (1), and then the surface of the photo-component layer is separated by a dry film photoresist which is covered with a film, and is processed. The photosensitive image forming layer is formed on the substrate by laminating the image forming material or the processed substrate, and if necessary, a protective layer is provided thereon, and the photosensitive composition layer is image-exposed by drawing a circuit or an electric photomask film. . (2) When the photomask film (3) is provided with a dummy support film or a protective layer, the protective layer or the like (4) is a non-image portion of the negative type, and the non-image portion of the positive type is made of a base. The liquid is dissolved and removed to form light corresponding to the circuit pattern. (5) using the photoresist image as a mask, performing work or electroplating on the substrate to be processed, and then removing the photoresist image, and forming a lithography on the circuit or electrode pattern of the mask film on the substrate to be processed. The law has been applied. In addition, in recent years, laser light has been used to expose light sources without using light. Lasers that can directly form images by digital information such as computers can directly improve the productivity, resolution, and positional accuracy. If the filming method is not as good as the use of laser light. The Ray has various light sources known as ultraviolet light to infrared light, but can be exposed to laser light from argon ion laser, cesium ion laser, YAG laser and semiconductor from output, stability, photographic ability and cost. The photoacid composition falsely supports stripping the sensation to the direct image polar pattern. Stripped. Exposure resistance image etching and plate shape is widely used to cover the film, the purpose, because of the light, for example, the image point of view, laser, etc. (3) (3) 1354864 light generated from the visible light to the infrared field. For example, an argon ion laser having a wavelength of 488 nm has been used, and a lithography method of FD-YAG laser having a wavelength of 532 nm has been put into practical use, and a material of 3 65 nm UV laser for printed wiring substrate has been sold. However, in the conventional direct-drawing method of the photosensitive composition, the sensitivity is still insufficient, and it can be seen that the safety light under the yellow light of the photosensitive composition under the laser light must be operated in a dark room environment of red illumination. However, in recent years, laser technology has made remarkable progress, and a semiconductor laser that can operate in a bright environment illuminated by yellow light and that can stably oscillate in the blue-violet field is used. However, since the output force is lower than that of other visible light fields, and there is still room for improvement in the sensitivity of the photosensitive composition, in particular, the photoresist material used in a state where the thickness of the photosensitive composition layer is not thick is not obtained. The high resolution, the rectangularity, etc. of the image that can be obtained, and even the direct drawing method and the lithography method cannot be put to practical use. The photosensitive composition is, for example, intended to mention the sensitivity of the blue-violet field, etc., and proposes a compound having at least one vinyl group in which at least one of its ortho and para positions is substituted with a sulfur atom as a sensitizer and a polymerization initiator. A photopolymerizable composition for a lithographic printing plate in which a combination of a titanium compound is used (for example, see JP-A-2002-169282). However, the photoresist of the photosensitive composition is particularly thicker than ημηι in the photosensitive composition layer formed on the substrate to be processed via the dry film resist. In the plating step of the manufacturing steps of a printed circuit wiring board or the like, in recent years, a thicker plating thickness is required as the wiring line width is smaller, and there is still room for improvement in sensitivity in the blue-violet field. In addition, there is also a high-sensitivity yellow light under the -7- (4) (4) 1354864 * reduced problem. Further, it has been attempted to use the material corresponding to the above-described UV laser for blue-violet laser light, but the image obtained by the high-sensitivity type is inferior in resolution and shape, and the sensitivity of the high-resolution type is poor. [Disclosure of the Invention] The present invention has been made in view of the prior art, and an object of the present invention is to provide a high sensitivity to laser light in the blue-violet field, and an excellent safety lamp under a yellow lamp, and at the same time, the obtained image It is excellent in resolution and rectangularity, and can be used as a photosensitive layer of dry film photoresist, and is suitable for blue-violet laser photosensitive composition which is directly depicted by blue-violet light. Further, an object of the present invention is to provide an image forming material, an image forming material and an image forming method using the composition. In order to solve the above problems, the inventors of the present invention have found that the exposure amount of blue-violet laser light and the residual film ratio or the photosensitive composition having a specific relationship with the exposure amount and the development speed can achieve the aforementioned object, and the present invention has been completed. 〇 In other words, the main technical feature of the present invention is a negative blue-violet laser photosensitive composition characterized by exposure of blue-violet laser light, so that the residual film rate becomes 90% or more, and the minimum exposure amount is 4 〇mJ. /cm2 or less, the residual film ratio of the exposed portion [t(%)] to the logarithm of the exposure amount of the blue-violet laser light [logE ( nuT/cm2 )], and the residual film rate of the exposure amount curve is 15 The line of the following formula (〗) where the % point is connected to the 80% point (5) The γ値 of 1354864 is 4.0M02 or more, and t = ylogE + 5 (1). In addition, the main technical feature of the present invention is that a negative blue photosensitive composition is characterized in that the exposure rate of the blue-violet laser light is 90% or more, and the minimum exposure amount is 4 〇mJ/cm2. Membrane rate [t(%)] Calculated dissolved membrane rate. %)] Divided by imaging time [T ( sec )]. Imaging speed. Ο71" ( % /sec )] exposure to blue-violet laser light The point of the development speed (mJ/cm2) is 80% of the speed of the exposure curve and 20% of the point is connected to the following equation (: α値 is 1 2 or more, s=-alogE +p (2) The photosensitive composition is a negative photosensitive composition having a basic composition of an ethylenically unsaturated compound initiator (the following photopolymerizable composition), and the polymerization inhibitor in the composition is The amount is more preferably used as a sensitizer in a specific absorption wavelength range to achieve the object of the present invention. In other words, the preferred embodiment is that the photosensitive composition is based on an ethylenic material and a photopolymerization initiator. In the negative form of the composition, the photosensitive polymerization inhibitor is contained in an amount of 5 to 60 ppm. The photosensitive composition having a preferred shape contains a compound having a maximum absorption in the range of 340 to 450 nm as a sensitizer. The photopolymerizable composition is an ethylenically unsaturated compound contained in the photopolymerizable composition. Preventing polymerization or purple laser light during manufacture, so that the line is exposed by exposure [100-t ([s={]00-number [logE maximum development]) and photopolymerization is sometimes called a specific reduction. The state of the saturated composition of the present invention is a polymerization inhibitor of the product of the above-mentioned wavelength range, which is a component of the product of the above-mentioned wavelength range, and a polymer which is capable of forming a photopolymerizable layer. In the case of the bonding material, a polymerization inhibitor may be added at the time of manufacture, in order to prevent thermal polymerization or polymerization over time of the photopolymerizable composition, and to be added to the polymerization inhibitor of the ethylenically unsaturated compound or the polymer binder. The amount of the polymerization inhibitor to be added to the composition is usually 100 ppm or more, and the polymerization in the photopolymerizable composition is ensured. Controlling the amount of the inhibitor in a small amount is contrary to the common knowledge of those skilled in the art. The main technical feature of the present invention is a negative blue-violet thunder which forms a layer of the aforementioned negative blue-violet laser photosensitive composition on the pseudo-support film. And irradiating the photosensitive image forming material on the substrate to be processed, and laminating the negative blue-violet laser photosensitive image forming material on the side of the negative blue-violet laser photosensitive composition layer and the negative blue-violet The negative blue-violet laser photosensitive composition layer of the laser photosensitive image forming material is subjected to development processing by laser light having a wavelength of 3 90 to 430 nm, and an image forming method for generating an image is performed. EFFECT OF THE INVENTION The present invention provides high sensitivity to laser light in the blue-violet field, excellent safety light under a yellow lamp, and excellent image resolution and rectangularity. In particular, it can be used as a photosensitive layer of a dry film photoresist material, and is suitable for a blue-violet laser photosensitive composition directly painted by blue-violet laser light, and an image forming material, an image forming material, and a drawing using the same. Like the formation method. (7) (1) 1354864 Best Mode for Carrying Out the Invention <Minimum Exposure Amount> The negative blue-violet laser photosensitive composition of the present invention (hereinafter, the negative blue-violet laser photosensitive composition of the present invention has When it is only called blue-violet laser photosensitive composition), it is exposed by blue-violet laser light, and the residual film rate is 90% or more. The minimum exposure amount is 40 mJ/crn2 or less, and the minimum exposure amount is 20 mJ/ It is preferably cm2 or less, and more preferably 1 omj/cm2 or less. The minimum exposure amount at which the residual film ratio is 90% or more is a photosensitive composition layer having a thickness of 0.5 cm x 〇 5 cm formed on a support of 5 to 100 μm by a wavelength of 400 to 4 1 On m. The blue-violet laser light/exposure amount is tentatively exposed, and the unexposed photosensitive composition layer is sprayed at 0.15 Mpa using a 5% 7% aqueous sodium carbonate solution at 25 ° C. When the development reaches 1.5 times of the time (end point) of complete dissolution, the residual film rate becomes the minimum exposure amount of 90% or more. The minimum exposure amount is not particularly limited, but the lower the better, but it is usually lmJ/cm2 or more. <Residual film rate-exposure amount curve and γ値> The blue-violet laser photosensitive composition of the present invention has a residual film ratio of 90% or more and a minimum exposure amount of 40 mJ/cm 2 or less, and a residual film of the exposed portion Rate [t(%)] is the logarithm of the residual film rate of the residual film rate and exposure curve plotted on the logarithm of the blue-violet laser light [i〇gE ( m J / c m2 )] The γ 直线 of the straight line of the following formula (1) to which 80% of the points are connected must be 4.0 X 1 02 or more.値 値 is ideally 4.5 X 1 〇 2 or more, particularly preferably -11 - (8) (8) I354864 5 . Ο χ 1 Ο 2 or more, and most preferably γ 値 must be 5. 5 χ 1 Ο 2 or more. In the straight line of the following formula (1), when l 〇 gE = 0, δ t of t is an unintended number in the present invention. t = γ1〇 g Ε + 6 (1). When γ値 does not reach the above range, the resolution and shape of the obtained image may be inferior. The larger the γ値, the better the resolution and the squareness of the image, but the upper limit is usually 1.0x1 〇4. The residual film rate-exposure amount curve of the residual film ratio [t(%)] of the exposed portion to the logarithm of the exposure amount of the blue-violet laser light [logE (mJ/cm2)] is desirably in the field of insufficient exposure amount. The residual film ratio shows a certain enthalpy which is close to 〇%, and the residual film ratio in the field where the residual film ratio is 90% or more of the minimum exposure amount shows almost 90% or more, and the amount of the intermediate exposure amount is more than 90%. When the residual film ratio forms an image, it is still insufficient. However, in the field where the critical exposure amount of a certain residual film ratio is more than or equal, the inclination of the upper right straight line is displayed. In the present invention, the inclination of the straight line in the middle exposure amount field of the residual film rate/exposure amount curve is the slope γ of the straight line of the above formula (1) in which the residual film rate is 15% and the point of 80% is connected, and Limited to a specific 値 or more. In other words, the portion adjacent to the exposure portion is irradiated with a plurality of leaked light, which is of course less than the minimum exposure amount, and the critical exposure amount or more, and the portion which should not be exposed originally forms a film, which deteriorates the squareness, but is adjacent to the exposure portion. The portion of the intermediate exposure amount which is irradiated with the leak light of the critical exposure amount or less is reduced, and the leak light forming film of the portion adjacent to the exposed portion can be suppressed. <Development speed-exposure curve and α値> -12-(9) (9) 1354486 The blue-violet laser photosensitive composition of the present invention has a residual film rate of 90% or more and a minimum exposure amount of 40 mJ. /cm2 or less, and the dissolution rate (1〇〇_ t (%)) calculated from the residual film rate [t (%)] of the exposed portion is divided by the development time [T (sec)]. s = { 1 〇〇 · t} / τ ( % /sec )] The maximum resolution of the imaging speed-exposure curve plotted against the logarithm of the exposure of the blue-violet laser light [丨〇gE( mJ/cm2 )] The α値 of the straight line of the following formula (2) to which the point of 80% of the image speed is connected to the point of 20% is required to be 12 or more, preferably 13 or more, and more preferably 14 or more. The β値 of 5 in the straight line of the following formula (2) when 'logE = 0' is an unintended number in the present invention. s = -alogE + P (2) When a 値 does not reach the above range, the resolution and shape of the resulting image may be poor. The larger the a値, the better the resolution and the squareness of the image, but the upper limit is usually 100. The dissolution rate [100-t (%)] calculated from the residual film rate [t(%)] of the exposed portion is divided by the development time [T (sec)] by the development speed [5={100-1} / D (%/5^)] The imaging speed-exposure curve plotted against the logarithm of the exposure of blue-violet laser light [logE (mJ/cm2)], ideally the dissolved film rate in the field of insufficient exposure Almost 1%, the development speed is a high level of certain enthalpy, and the dissolution rate is less than I 〇 % of the exposure amount, and the development speed is a low level. The dissolution rate was 10 ° /. The following is still insufficient ‘but the slope of the lower right line is shown in the field above the critical exposure amount of the dissolved film rate to some extent. In the present invention, the inclination of the straight line in the intermediate exposure amount field of the development speed-exposure amount curve is the maximum dissolution rate (the following -13 - 1354864 do). When the image is developed, the dissolution film rate [100-t (%)] The slope α of the straight line of the above formula (2) in which the point of 80% of the development speed of =0 is 20% of the point is limited to a specific 値 or more. The maximum dissolution rate is the development speed when the film rate is [100-t (%)] = 100% when the image is developed under the following conditions. The residual film rate-exposure amount curve and the developing speed-exposure amount curve were produced as follows. (!) 感光.5cmx〇_5cm, film thickness 5~ ΐΟΟμπι photosensitive composition layer by blue-violet laser light with a wavelength of 400 to 410nm, changing the exposure amount for tentative exposure. (2) Then, using a 0.7% by weight aqueous sodium carbonate solution of the developing solution to spray at 25 ° C, 〇15 Mpa, the time when the unexposed photosensitive composition layer is completely dissolved (*) in the same condition. At a time of 1.5 times the time of development, the residual film rate was measured. (3-1) Residual film rate-exposure amount curve is a plot of the residual film rate [t (%)] of the exposed portion with respect to the exposure amount [l〇gE (mJ/cm2)]. Or (3-2) development speed and exposure amount curve depicting the dissolution film rate [100-t (%)] calculated from the residual film rate [t (%)] of the exposed portion by the development time [T (sec) )] In addition to the development speed [s={100-t}/T(%/Sec)] versus the logarithm of the exposure amount (logE(mJ/cm2)]. <sensitizer> Blue-violet thunder of the present invention In the case where the photosensitive composition has the residual film rate-exposure amount characteristic, the development speed and the exposure amount characteristic, and the minimum exposure amount, when the photosensitive composition receives the irradiation of the active light, the photoexcitation energy is transmitted to the later description. Activating photo-polymerization initiator, photo-acid generator, etc. -14-(11) (11)1354864, which is decomposed by the active compound, and has a sensitizing agent which generates a sensitizing function of an active species such as a radical or an acid. For example, a compound having a maximum absorption in the wavelength range of 3 30 to 4 5 Onm is preferred. The sensitizer is, for example, the following formula: (i) Japanese Patent Laid-Open Publication No. 2000-10277, Japanese Patent Application No. 2002-362326, and the like. The basic formula is a basic skeleton, a diaminobenzophenone compound, and (ii) Japanese Patent Laid-Open Publication No. 2004-198446. The sulfonylimine-based compound of the basic skeleton, such as the aminophenyl benzoimidazole/benzoxazole/benzothiazole-based compound, (iii) the specification of the Japanese Patent Application No. 2004-424180, (iv) The following formula of the specification of the Japanese Patent Publication No. 2003-3 92404 is an amino group D-quino compound of the basic skeleton, (v) Japanese Patent Laid-Open Publication No. 2002-169282, and JP-A No. 20〇4" 9 1 93 8 The following formula is a part of the basic skeleton, a cyanine-based compound, and (vi) the following formula, such as the specification of JP-A-2002-2682 39, which is a basic skeleton of a thiazolone-based compound, (vii) a wish 2003- The following formula in the specification of No. 606, No. 606, is a basic skeleton quinone imine compound, (viii) an aminophenyl phenyl-benzimidazole/benzobisazole/benzothiazole compound having the following basic formula; (ix) a triazole-based compound having a basic skeleton, (X) a cyanostyrene compound having a basic skeleton, and (xi) an anthracene compound having a basic skeleton and (xii) The oxadiazole/thiadiazole compound of the basic skeleton, (xiii) is a pyrazoline system of the basic skeleton (Xiv) The following formula in which the following formula is a basic skeleton coumarin compound, (χν) Patent No. 2004-2189, No. 5, etc., is a basic skeleton triphenylamine compound, (xvi) The fluorenone compound of the basic skeleton, etc. -15- (12) 1354864 In the following formula, X and Z are each independently a nitrogen atom, an oxygen atom, a sulfur atom or CR, and Y is an arbitrary linking group, and η is An integer of 0 or more, and a compound of the following formula representing a basic skeleton may have, for example, an alkyl group, a ring-based group, an alkenyl group, a cycloalkenyl group, an alkoxy group, an alkylthio group, an aryl group, or an aryloxy group. Base, alkenyloxy, olefinylthio, fluorenyl, decyloxy, amine, decylamino, carboxy 'carboxylate, urethane, aminomethyl decyl, amine ore, Substituents such as a sulfonate group, a saturated or unsaturated heterocyclic group, and the like may further have a substituent, and a plurality of substituents may be bonded to each other to form a cyclic structure. (ii (iv) (v)

. ^ / Ν, ΝΗ2 (ix) yNeY"(*Nx (ii) h2n^ / Ν, ΝΗ 2 (ix) yNeY"(*Nx (ii) h2n

0 II HS—N=CH2 O0 II HS—N=CH2 O

h2n X fj oH2n X fj o

*N N /η (X) (xi)*N N /η (X) (xi)

CH=CH~CN <Q)-ch=ch-^〇) (xii)CH=CH~CN <Q)-ch=ch-^〇) (xii)

N—NN-N

X <Q^X <Q^

CH=CH—CH II X (xiii) (vi) (xiv)CH=CH—CH II X (xiii) (vi) (xiv)

H 〇 -16- (13) 1354864H 〇 -16- (13) 1354864

(viii)(viii)

本發明之感光性組成物之增感劑’在上述中較佳者爲 結構中具有二烷胺基苯結構之二烷胺基苯系化合物及結構 中具有三苯基結構之三苯胺系化合物。特別是前者例如有 二烷胺基苯系化合物、對於苯環上之胺基在對位之碳原子 具有雜環基之取代基的二烷胺基苯系化合物、對於苯環上 之胺基在對位之碳原子具有含磺醯基亞胺基之取代基的二 烷胺基苯系化合物及形成喹諾骨架之二烷胺基苯系化合物 該一院fe基一本甲嗣系化合物例如有一般式(I)表 示者。The sensitizer of the photosensitive composition of the present invention is preferably a dialkylamino benzene compound having a dialkylamino benzene structure and a triphenylamine compound having a triphenyl structure in the structure. In particular, the former has, for example, a dialkylamino benzene-based compound, a dialkylamino benzene compound having a substituent of a heterocyclic group in the carbon atom of the phenyl ring at the para position, and an amine group on the benzene ring. a dialkylamino benzene-based compound having a sulfonyl imine group-containing substituent and a dialkylamino benzene-based compound forming a quinol skeleton, wherein the carbon atom of the para-position has a mercapto-based carbene-based compound The general formula (I) is represented.

〔式(I )中’ R1、R2、R5及R6係分別獨立可具有取 代基之烷基,R3、R4、R7及R8係分別獨立可具有取代基 之院基或氫原子,又R1與R2、R5與R6、R1與與 -17- (14) (14)1354864 R4、R5與R7及R6與R8係分別自獨立可形成含氮雜環〕 〇 式(I)中之R1、^2、!^5及R6之烷基之碳數及R3、 R4、R7及R8爲烷基時之碳數較佳爲1至6。形成含氮雜 環時,較佳爲5或6員環’而R1與R3 ' R2與R4、R5與 R7、或R6與R8形成6員環之四氫化曈啉環較佳’ R1、R2 、R3、R4或/及R5、R6、R7、R8形成氮雜三環更佳。特別 理想爲2位上具有烷基取代基之四氫化11奎啉環、或含該四 氣化卩奎啉環之氮雜三環。 一般式(I)表示之化合物的具體例有4 ’ 4’-雙(二 甲基胺基)二苯甲酮、4’ 4,_雙(二乙基胺基)二苯甲嗣 及下述結構之化合物。 -18 · (15)1354864[In the formula (I), 'R1, R2, R5 and R6 are each independently an alkyl group which may have a substituent, and R3, R4, R7 and R8 each independently may have a substituent group or a hydrogen atom, and R1 and R2, respectively. , R5 and R6, R1 and -17-(14) (14) 1354864 R4, R5 and R7, and R6 and R8 are independently capable of forming a nitrogen-containing heterocyclic ring, respectively, R1, ^2 in the formula (I) ! The carbon number of the alkyl group of ^5 and R6 and the carbon number when R3, R4, R7 and R8 are alkyl groups are preferably from 1 to 6. When a nitrogen-containing heterocyclic ring is formed, it is preferably a 5- or 6-membered ring' and R1 and R3' R2 and R4, R5 and R7, or R6 and R8 form a 6-membered ring of a tetrahydroporphyrin ring, preferably 'R1, R2, R3, R4 or/and R5, R6, R7 and R8 are more preferably azatricyclo. Particularly preferred is a tetrahydrogenated 11 quinoline ring having an alkyl substituent at the 2-position or an azatricyclic ring containing the ruthenium quinolate ring. Specific examples of the compound represented by the general formula (I) are 4' 4'-bis(dimethylamino)benzophenone, 4' 4,_bis(diethylamino)benzhydrazide and the following Structure of the compound. -18 · (15)1354864

又’對苯環上之胺基,在對位之碳原子上具有雜環基 之取代基之二烷胺基苯系化合物之雜環基例如有含氮原子 、氧原子或硫原子之5或6員環者,特別理想爲具有縮合 苯環之5員環’下列一般式(11)表示者。Further, the heterocyclic group of the dialkylamino benzene compound having a substituent on the benzene ring and having a substituent of the heterocyclic group at the carbon atom of the para position has, for example, a nitrogen atom, an oxygen atom or a sulfur atom 5 or The 6-member ring is particularly preferably a 5-membered ring having a condensed benzene ring, which is represented by the following general formula (11).

(II) 〔式(II)中’ R|及R2係分別獨立可具有取代基之 烷基,R及R4係分別獨立可具有取代基之烷基或氫原子 -19- (16) (16)1354864 ,R1與R2、R1與R3、R2與R4係分別獨立可形成含氮雜 環,X爲氧原子、硫原子、二烷基伸甲基、亞胺基或烷基 亞胺基,縮合成雜環之苯環可具有取代基〕。 式(Π )中之R1及R2之烷基之碳數及R3及R4爲烷 基時之碳數較佳爲1至6。形成含氮雜環時,較佳爲5或 6員環,而R1與R3、R2與R4、R5與R7、或R6與Rs形成 6員環之四氫化卩奎啉環較佳,R1、R2、R3、R4或/及R5、 R6、R7、R8形成氮雜三環更佳。特別理想爲2位上具有烷 基取代基之四氫化喹啉環、或含該四氫化咱啉環之氮雜三 環。X爲二烷基伸甲基時之烷基的碳數較佳爲]至6,烷 基亞胺基時之烷基的碳數較佳爲1至6。 前述一般式(II )表示之化合物之具體例如2-(對二 甲基胺基苯基)苯并噁唑、2-(對二乙基胺基苯基)苯并 噁唑' 2 -(對二甲基胺基苯基)苯并[4,5 ]苯并噁唑、2 · (對二甲基胺基苯基)苯并[6,7]苯并噁唑、2-(對二甲 基胺基苯基)苯并噻唑、2-(對二乙基胺基苯基)苯并噻 唑、2-(對二甲基胺基苯基)苯并咪唑、2-(對二乙基胺 基苯基)苯并咪唑、2-(對二甲基胺基苯基)-3,3-二甲 基- 3H-D弓丨哚、2-(對二乙基胺基苯基)-3,3-二甲基- 3H-吲哚及下述結構之化合物。 -20- (17) 1354864(II) [In the formula (II), 'R| and R2 are each independently an alkyl group which may have a substituent, and R and R4 each independently may have a substituent alkyl group or a hydrogen atom-19-(16) (16) 1354864, R1 and R2, R1 and R3, R2 and R4 are each independently capable of forming a nitrogen-containing heterocyclic ring, and X is an oxygen atom, a sulfur atom, a dialkylmethyl group, an imido group or an alkylimine group. The benzene ring of the ring may have a substituent]. The carbon number of the alkyl group of R1 and R2 in the formula (Π) and the carbon number in the case where R3 and R4 are an alkyl group are preferably from 1 to 6. When a nitrogen-containing heterocyclic ring is formed, it is preferably a 5- or 6-membered ring, and R1 and R3, R2 and R4, R5 and R7, or R6 and Rs form a 6-membered ring of tetrahydrofuran quinoline ring, R1, R2. R3, R4 or/and R5, R6, R7 and R8 are more preferably aza-tricyclic. Particularly preferred is a tetrahydroquinoline ring having an alkyl substituent at the 2-position or an azatricyclic ring containing the tetrahydroporphyrin ring. The alkyl group in the case where X is a dialkylmethyl group has a carbon number of preferably from 5 to 6, and the alkyl group of the alkyl imino group preferably has a carbon number of from 1 to 6. Specific examples of the compound represented by the above general formula (II) are, for example, 2-(p-dimethylaminophenyl)benzoxazole, 2-(p-diethylaminophenyl)benzoxazole ' 2 - (pair) Dimethylaminophenyl)benzo[4,5]benzoxazole, 2 · (p-dimethylaminophenyl)benzo[6,7]benzoxazole, 2-(p-dimethyl Aminophenyl)benzothiazole, 2-(p-diethylaminophenyl)benzothiazole, 2-(p-dimethylaminophenyl)benzimidazole, 2-(p-diethylamine) Benzimidazole, 2-(p-dimethylaminophenyl)-3,3-dimethyl-3H-D, 2-(p-diethylaminophenyl)-3 , 3-dimethyl-3H-indole and a compound of the following structure. -20- (17) 1354864

上述一般式(Ic)所示之化合物以外之對於苯環上胺 基’在對位之碳原子上具雜環基之取代基的二烷基胺基苯 系化合物例如有2 -(對二甲基胺基苯基)吡啶、2 -(對二 乙基胺基苯基)吡啶、2-(對二甲基胺基苯基)曈啉、2-(對二乙基胺基苯基)喹啉、2-(對二甲基胺基苯基)嘧 啶、2 -(對二乙基胺基苯基)嘧啶、2,5 _雙(對二乙基胺 基苯基)-1’ 3,4·噁二唑、2,5 -雙(對二乙基胺基苯基 )一 1,3,4 -噁二唑等。 又,對於苯環上之胺基,在對位之碳原子上具有含磺 醯基亞胺基之取代基之二烷胺基苯系化合物例如有下列一 般式(m)表示者The dialkylamino benzene compound other than the compound represented by the above general formula (Ic) for the substituent of the amino group on the phenyl ring having a heterocyclic group at the carbon atom of the para position has, for example, 2-(p-dimethylene) Aminophenyl)pyridine, 2-(p-diethylaminophenyl)pyridine, 2-(p-dimethylaminophenyl)porphyrin, 2-(p-diethylaminophenyl)quinoline Porphyrin, 2-(p-dimethylaminophenyl)pyrimidine, 2-(p-diethylaminophenyl)pyrimidine, 2,5-bis(p-diethylaminophenyl)-1' 3, 4. Oxadiazole, 2,5-bis(p-diethylaminophenyl)-1,3,4-oxadiazole and the like. Further, the dialkylamino benzene-based compound having a sulfonium imide group-containing substituent on the carbon atom at the para position, for example, has the following general formula (m).

0 11 C=N—S—R10 (III)0 11 C=N—S—R10 (III)

I II R9 〇 -21 - (18) 1354864 〔式(III )中,R1及R2係分別獨立可具有取代基之 烷基,R3及R4係分別獨立可具有取代基之烷基或氫原子 ,R1與R2、R1與R3及R2與R4係分別獨立可形成含氮雜 環,R9爲一價基或氫原子,R1Q爲一價基〕。 〔式(III)中之R1及R2之烷基之碳數及R3及R4爲 垸基時之碳數較佳爲1至6。形成含氮雜環時,較佳爲5 或6員環,而R3及R4爲氫原子較佳。R9及rig爲一價基 ’例如有烷基、環烷基、烯基、環烯基、烷氧基、烯氧基 、醯基、醯氧基、芳基、芳氧基、芳烷基、芳烯基、羥基 、甲醯基、羧基、羧酸酯基、胺基甲醯基、胺基、醯基胺 基、胺基甲酸酯基、磺醯胺基、磺酸基、磺酸酯基、胺磺 醯基、烷硫基、亞胺基 '氰基及雜環基等。這些當中較佳 係R9爲氫原子,R1()爲芳基。I II R9 〇-21 - (18) 1354864 [In the formula (III), R1 and R2 are each independently an alkyl group which may have a substituent, and R3 and R4 are each independently an alkyl group or a hydrogen atom which may have a substituent, R1 And R2, R1 and R3, and R2 and R4 are each independently capable of forming a nitrogen-containing heterocyclic ring, R9 is a monovalent group or a hydrogen atom, and R1Q is a monovalent group. The carbon number of the alkyl group of R1 and R2 in the formula (III) and the carbon number when R3 and R4 are a fluorenyl group are preferably from 1 to 6. When a nitrogen-containing heterocyclic ring is formed, it is preferably a 5- or 6-membered ring, and R3 and R4 are preferably a hydrogen atom. R9 and rig are monovalent groups 'for example, alkyl, cycloalkyl, alkenyl, cycloalkenyl, alkoxy, alkenyloxy, decyl, decyloxy, aryl, aryloxy, aralkyl, Aralkenyl, hydroxy, methionyl, carboxy, carboxylate, aminomethyl decyl, amine, decylamino, urethane, sulfonyl, sulfonate, sulfonate a group, an amine sulfonyl group, an alkylthio group, an imido group 'cyano group, a heterocyclic group, and the like. Among these, R9 is preferably a hydrogen atom, and R1() is an aryl group.

形IVShape IV

般 1 列 \—/ 下(IV 有 C 如 例 物 合 化 系 苯 基 〔式(IV )中’ R 、R2及R11係分別獨立可具有取代 基之烷基,R3及R4係分別獨立可具有取代基之烷基或氫 原子,R1與R2、W與R3及R2與R4係分別獨立可形成含 氮雜環,R12爲可具有取代基之院基,可具有取代基之芳 -22- (19)1354864 基或氫原子〕。 式(IV)中之R^R2及Ri1之烷基之碳數及R3、R4 及R11爲烷基時之碳數較佳爲1至6。形成含氮雜環時’ 較佳爲5或6員環’而R3及R4爲氫原子較佳。R12爲苯 基較佳。Example 1 column \-/下 (IV has C such as the compound phenyl group [in the formula (IV), 'R, R2 and R11 are each independently an alkyl group which may have a substituent, and R3 and R4 are each independently capable of having a substituent or an alkyl group or a hydrogen atom, R1 and R2, W and R3 and R2 and R4 each independently form a nitrogen-containing heterocyclic ring, R12 is a substituent group, and may have a substituent of aryl-22- ( 19) 1354486 or a hydrogen atom. The carbon number of the alkyl group of R^R2 and Ri1 in the formula (IV) and the carbon number when R3, R4 and R11 are an alkyl group are preferably from 1 to 6. The ring is preferably a 5 or 6 membered ring and R3 and R4 are preferably a hydrogen atom. R12 is preferably a phenyl group.

由以上之二烷胺基苯系化合物所構成之增感劑中’較 佳者爲前述一般式(I)表示之二烷胺基二苯甲酮系化合 物、前述一般式(III )表示之對於苯環上之胺基,在對位 之碳原子上具有含磺醯基亞胺基之取代基之二院胺基苯系 化合物之二烷胺基二苯甲酮系化合物或前述一般式(IV) 表示’形成喹諾骨架之二烷胺基苯系化合物。 較佳之本發明之增感劑例如有下述一般式(XI )〜( XIII )表示之具有至少兩個芳香環與氮原子鍵結之結構的 化合物(一般式(XI )包含前述三苯胺系化合物)。Among the sensitizers composed of the above dialkylamino benzene-based compounds, 'the preferred one is the dialkylamino benzophenone-based compound represented by the above general formula (I), and the above general formula (III) An amine group on a benzene ring, a dialkylamino benzophenone compound having a sulfonium imino group-containing substituent on a carbon atom at a para position, or the above general formula (IV) ) represents a dialkylamino benzene compound which forms a quinol skeleton. The sensitizer of the present invention is preferably a compound having a structure in which at least two aromatic rings are bonded to a nitrogen atom represented by the following general formulas (XI) to (XIII) (the general formula (XI) contains the aforementioned triphenylamine compound. ).

…(XI)...(XI)

-23- (20)1354864-23- (20)1354864

.••(ΧΙΕ) (上述一般式(XI)〜(XIII)中,環Α〜G係分別 獨立之以芳香族烴環或芳香族雜環爲基本骨架者,環A與 環B、環D與環E'環F與環G互相鍵結可形成含有n的 鍵結環,一般式(XII)中,連結基L係表示含有芳香族 烴環及/或芳香族雜環之連結基,連結基L與N係以芳香 族烴環或芳香族雜環鍵結’ η爲2以上之整數,一般式( ΧΙΠ )中’ R爲可具有取代基之烷基,環a〜G及連結基 L可具有取代基’這些取代基彼此可互相鍵結形成環)。 上述一般式(XI)〜(XIII)中,環 A〜G表示之芳 香族烴環例如有苯環、萘環、蒽環、菲環、輿環、荀環、 苊烯環及茚環等。環A〜G表示之芳香族雜環例如有呋喃 環' 噻吩環、吡咯環、噁唑環、異嘌唑環、噻唑環 '異噻 唑環、咪唑環、吡唑環、呋咱環、三唑環、吡喃環、噻二 唑環、噁二唑環、吡啶環、噠嗪環、嘧啶環及吡嗪環等。 環A〜G表示之芳香族烴環中較佳者爲苯環 '萘環、蒽環 ,更佳者爲苯環。環A〜G表示之芳香族雜環中較佳者爲 呋喃環、噻吩環、吡咯環、吡啶環、噁唑環、噻唑環,更 佳者爲呋喃環、噻吩環、吡咯環。 環A、環B、環D、環E、環F、環G及連結基L所 含有之環彼此鍵結可形成含有N原子的縮合環’此時例如 -24- (21) 1354864 形成含有各環鍵結之N原子的咔唑環。形成咔唑環時,a 〜G之環其中任一可爲非環結構,可爲任意之取代基,此 時較佳爲具有取代基之烷基。 環A〜G在任意位置上可具有取代基,這些取代基彼 此鍵結可形成環。 上述一般式(XII)中,連結基L係含有1個或2個 . 以上之芳香族烴環及/或芳香族雜環的連結基,N係直接鍵 結此連結基之芳香族烴環或芳香族雜環。 連結基L所含有之芳香族烴環、芳香族雜環例如有環 A〜G之芳香族烴環、芳香族雜環所例示者相同。連結基 L所含有之芳香族烴環較佳者爲苯環、萘環、蒽環,更佳 者爲苯環。連結基L所含有之芳香族雜環中較佳者爲呋喃 環、噻吩環、吡咯環、吡啶環、噁唑環、噻唑環、噻二唑 _ 環、噁二唑環,更佳者爲呋喃環、噻吩環、吡咯環。 連結基L含有2個以之芳香族烴環及/或芳香族雜環 時,這些環可直接連結或經由2價以上之連結基(此連結 基不限於2價以上之基’可含有2價以上之原子)來鍵結 。此時2價以上之連結基例如有公知者,例如下式之伸烷 基、 3C = C^;m , (m係1以上的整數) 胺基、〇原子、s原子、酮基、硫酮基、-c(=o)鄰 -25- (22) (22)1354864 、醯胺基、Se、Te' P、As、Sb、Si、B等之金屬原子、 芳香族烴環基、芳香族雜環基(不飽和雜環基)、非芳香 族雜環基(飽和雜環基)及這些之組合等。 夾雜於連結基L所含有之芳香族烴環及/或芳香族雜 環之間的連結基例如有下式之伸烷基、 (m係1以上的整數) 胺基、〇原子、S原子、酮基、-C ( =0 )鄰、醯胺基 、芳香族烴環基、芳香族雜環基、-C = N-、-C = N-N=、飽 和或不飽和之雜環基,更理想爲碳數1〜3之伸烷基、-0CH2鄰、-OCH2CH2鄰、-鄰、酮基、苯環基、呋喃環基 、噻吩環基、吡咯環基。上述一般式(XII )中,η較佳爲 2〜5。 連結基L藉由調整芳香族烴環或芳香族雜環與不飽和 連結基之組合,較佳爲350至430nm之波長範圍內具有極 大吸收及適當吸收的化合物。 連結基L所含有的環、連結環之連結基在任意位置可 具有任意的取代基’這些取代基彼此連結可形成環。 環A〜G及連結基L可具有之任意的取代基例如有氟 原子、氯原子、溴原子 '碘原子等鹵原子;羥基;硝基; 氰基;一價有機基等。一價有機基例如下述者。 甲基 '乙基、正丙基' 異丙基、正丁基、異丁基、第 -26- (23) (23)1354864 三丁基、戊基、第三戊基、正己基、正庚基、正辛基、第 三辛基等碳數1至18之直鏈或支鏈狀烷基;環丙基、環丁 基、環戊基、環己基、金剛基等碳數3至18之環烷基;乙 烯基、丙烯基、己烯基等碳數2至18之直鏈或支鏈狀鏈烯 基;環戊烯基、環己烯基等碳數3至18之環狀鏈烯基;甲 氧基、乙氧基、正丙氧基、異丙氧基、正丁氧基、第二丁 氧基、第三丁氧基、戊氧基、第三戊氧基、正己氧基、正 庚氧基、正辛氧基、第三辛氧基等碳數1至18之直鏈或支 鏈狀烷氧基:甲硫基、乙硫基、正丙硫基、異丙硫基、正 丁硫基 '第二丁硫基、第三丁硫基、戊硫基、第三戊硫基 、正己硫基、正庚硫基、正辛硫基、第三辛硫基等碳數1 至18之直鏈或支鏈狀烷硫基;苯基、甲苯基、二甲苯基、 來基等碳數6至18之芳基;苯甲基、苯乙基等碳數7至18 之芳烷基;乙烯氧基、丙烯氧基、己烯氧基等碳數2至18 之直鏈或支鏈狀鏈烯氧基;乙烯硫基、丙烯硫基、己烯硫 基等碳數2至18之直鏈或支鏈狀鏈烯硫基;-COR21表示之 醯基;羧基;-OCOR21表示之醯氧基;-NR23R24所示之胺 基;-NHCOR25所示之醯基胺基;-NHCOOR26所示之胺基甲 酸酯基;-CONR27R28所示之胺基甲醯基;-S〇2R32所示之 磺酸酯基;-C = NR33所示之基;-C=N-NR34R35所示之基; 2 -噻嗯基、2 -吡啶基、呋喃基、噁唑基、苯并噁唑基、噻 唑基、苯并噻唑基、嗎啉基、吡咯烷基、四氫化噻吩二氧 化物基等飽和或不飽和雜環基。 R21〜R35爲係分別獨立之氫原子、可被取代之院基、 -27- (24) 1354864 可被取代之稀基、可被取代之芳基、或可被取代之芳烷基 。上述取代基群中,烷基、環烷基、烯基、環烯基、烷氧 基、烷硫基、方基、芳烷基、條氧基、烯硫基可再被取代 基取代。 這些取代基之環A〜G、連結基L之取代位置無特限制 ’具有多個取代基時,這些可相同或不同。 環A〜G、連結基^爲無取代,或被取代基例如鹵原子 、氰基、可被取代之烷基、可被取代之環烷基、可被取代 之烯基、可被取代之烷氧基、可被取代之芳基、或可被取 代之方烷基、可被取代之烯氧基、可被取代之烯硫基、可 被取代之胺基、可被取代之醯基 '羧基、_。=财33所示之 基、-C=N-NR34R35所千亡宜 飾_ 尸灯不之基 '飽和或不飽和之雜環基所取 代,具有取代基時,東w相々而你_ 吏理心、之取代基爲鹵原子、氰基、可 被取代之烷基、可被取代之環烷基、 被取代之烷氧基、可被取代之芳基、 可被取代之胺基' _C = NR33所示之基 可被取代之烯基、可 可被取代之芳烷基、 、-C = N_NR34r35 所示 之基、飽和或不飽和之雜環基。 環A〜G及連結_ L可具有上述任異之取代基尙可被 任意㈣基取代時’此取代基理想例爲甲氧基、乙氧基、 正_、異丙氧基、正丁氧基、第二丁氧基、第三丁氧 基等碳數】至& t _ 之k氧基:甲氧基甲氧基、乙氧基甲氧基 、丙氧基甲氧基' z 氧基乙氧基 '丙氧基乙氧基、甲氧基 丁氧基等碳數2至 之焼氧基烷氧基;甲氧基甲氧基甲 氧基、甲氧基甲综™Z -fc*. 基乙氧基、甲氧基乙氧基甲氧基、乙氧 -28 - (25) (25)1354864 基甲氧基甲氧基、乙氧基乙氧基甲氧基等碳數3至ι5之 烷氧基烷氧基烷氧基;苯基、甲苯基、二甲苯基等碳數6 至12之芳基(這些可再被取代基取代);苯氧基、甲苯 氧基、二甲苯氧基、萘氧基等碳數6至12之芳氧基;乙 烯氧基、丙烯氧基等碳數2至12之烯氧基;乙醯基、丙 醯基等醯基;氰基;硝基;羥基;四氫化呋喃基;胺基; N,N-二甲基胺基、N,N-二乙基胺基等碳數]至10之院 基胺基:甲基磺酿胺基、乙基擴醯胺基、正丙基擴艦胺基 等碳數1至6之烷基磺醯胺基;氟原子、氯原子、溴原子 等鹵原子;甲氧基羰基、乙氧基羰基、正丙氧基羰基、異 丙氧基羰基、正丁氧基羰基等碳數2至7之烷氧基羰基; 甲基羰氧基、乙基羰氧基、正丙基羰氧基、異丙基羰氧基 、正丁基羯氧基等碳數2至7之院基羯氧基;甲氧基親氧 基、乙氧基羰氧基、正丙氧基羰氧基、異丙氧基羰氧基、 正丁氧基羰氧基、第三丁氧基羰氧基等碳數2至7之烷氧 基羰氧基;乙烯基、丙烯基、己烯基等碳數2至18之直 鏈或支鏈之烯基;等。 本發明使用之前述一般式(XI)〜(XIII)表示之增 感劑係在3 90至43 Oiim之波長範圍內具有適度吸收,因此 在330至450nm、更理想爲350至430nm之波長範圍內具 有極大吸收者。因此,分子中含有4個以上之芳香族烴環 及/或芳香族雜環較佳,含有5個以上之芳香族烴環及/或 芳香族雜環更佳。 前述一般式(XI)〜(xm )表示之增感劑之具體例 -29- (26) 1354864 如下述,但不限於此。 前述一般式(XI)之增感劑的例 (XI-a) ύ.••(ΧΙΕ) (In the above general formula (XI)~(XIII), the ring Α~G series are independent of an aromatic hydrocarbon ring or an aromatic heterocyclic ring as the basic skeleton, and ring A and ring B, ring D The ring E' ring F and the ring G are bonded to each other to form a bond ring containing n. In the general formula (XII), the link group L represents a linker group containing an aromatic hydrocarbon ring and/or an aromatic hetero ring, and is linked. The group L and the N are an aromatic hydrocarbon ring or an aromatic heterocyclic bond 'n' which is an integer of 2 or more. In the general formula (ΧΙΠ), 'R is an alkyl group which may have a substituent, and the ring a to G and the linking group L There may be a substituent 'these substituents may be bonded to each other to form a ring). In the above general formulae (XI) to (XIII), the aromatic hydrocarbon ring represented by the rings A to G may, for example, be a benzene ring, a naphthalene ring, an anthracene ring, a phenanthrene ring, an anthracene ring, an anthracene ring, a terpene ring or an anthracene ring. The aromatic heterocyclic ring represented by the ring A to G is, for example, a furan ring, a thiophene ring, a pyrrole ring, an oxazole ring, an isoxazole ring, a thiazole ring, an isothiazole ring, an imidazole ring, a pyrazole ring, a furazan ring, and a triazole. Ring, pyran ring, thiadiazole ring, oxadiazole ring, pyridine ring, pyridazine ring, pyrimidine ring and pyrazine ring, and the like. Preferred among the aromatic hydrocarbon rings represented by the rings A to G are a benzene ring 'naphthalene ring, an anthracene ring, and more preferably a benzene ring. Preferred among the aromatic heterocyclic rings represented by the rings A to G are a furan ring, a thiophene ring, a pyrrole ring, a pyridine ring, an oxazole ring, and a thiazole ring, and more preferably a furan ring, a thiophene ring or a pyrrole ring. Rings A, Ring B, Ring D, Ring E, Ring F, Ring G, and the ring contained in the linking group L are bonded to each other to form a condensed ring containing N atoms. In this case, for example, -24-(21) 1354864 is formed to contain each A carbazole ring of a ring-bonded N atom. When the carbazole ring is formed, any of the rings of a to G may be an acyclic structure, and may be any substituent, and is preferably an alkyl group having a substituent. The rings A to G may have a substituent at any position, and these substituents may bond to each other to form a ring. In the above general formula (XII), the linking group L contains a linking group of one or two or more aromatic hydrocarbon rings and/or an aromatic heterocyclic ring, and N is an aromatic hydrocarbon ring which directly bonds the linking group or Aromatic heterocycle. The aromatic hydrocarbon ring and the aromatic hetero ring contained in the linking group L are the same as those exemplified as the aromatic hydrocarbon ring of the ring A to G and the aromatic hetero ring. The aromatic hydrocarbon ring contained in the linking group L is preferably a benzene ring, a naphthalene ring or an anthracene ring, and more preferably a benzene ring. Preferred among the aromatic heterocyclic rings contained in the linking group L are a furan ring, a thiophene ring, a pyrrole ring, a pyridine ring, an oxazole ring, a thiazole ring, a thiadiazole ring, an oxadiazole ring, and more preferably a furan group. Ring, thiophene ring, pyrrole ring. When the linking group L contains two or more aromatic hydrocarbon rings and/or aromatic heterocyclic rings, these rings may be directly linked or via a linking group having two or more valences (the linking group is not limited to a base of two or more valences) and may contain two valences. The above atoms) are bonded. In this case, a linking group having a valence of two or more is known, for example, an alkyl group of the following formula, 3C = C^; m , (m is an integer of 1 or more), an amine group, a ruthenium atom, an s atom, a ketone group, a thioketone. Base, -c(=o)o-25-(22) (22)1354864, amidino group, Se, Te' P, As, Sb, Si, B, etc., a metal atom, an aromatic hydrocarbon ring group, aromatic A heterocyclic group (unsaturated heterocyclic group), a non-aromatic heterocyclic group (saturated heterocyclic group), a combination thereof, and the like. The linking group interposed between the aromatic hydrocarbon ring and/or the aromatic hetero ring contained in the linking group L is, for example, an alkyl group having the following formula, (m is an integer of 1 or more), an amine group, a germanium atom, an S atom, More preferably, keto group, -C ( =0 ) ortho, decylamino, aromatic hydrocarbon ring group, aromatic heterocyclic group, -C = N-, -C = NN=, saturated or unsaturated heterocyclic group It is an alkylene group having a carbon number of 1 to 3, -OCH2, -OCH2CH2, -o, keto, phenylcyclo, furanyl, thiophene, or pyrrole. In the above general formula (XII), η is preferably from 2 to 5. The linking group L is preferably a compound having a large absorption and an appropriate absorption in the wavelength range of 350 to 430 nm by adjusting an aromatic hydrocarbon ring or a combination of an aromatic hetero ring and an unsaturated linking group. The ring of the linking group L and the linking group of the linking ring may have any substituent at any position. These substituents are bonded to each other to form a ring. The ring A to G and the linking group L may have any substituent such as a halogen atom such as a fluorine atom, a chlorine atom or a bromine atom 'iodine atom; a hydroxyl group; a nitro group; a cyano group; a monovalent organic group. The monovalent organic group is, for example, the following. Methyl 'ethyl, n-propyl' isopropyl, n-butyl, isobutyl, -26-(23) (23)1354864 tributyl, pentyl, tert-pentyl, n-hexyl, n-glycol a linear or branched alkyl group having 1 to 18 carbon atoms such as a group, an n-octyl group or a third octyl group; a carbon number of 3 to 18 such as a cyclopropyl group, a cyclobutyl group, a cyclopentyl group, a cyclohexyl group or an adamantyl group; a cycloalkyl group; a linear or branched alkenyl group having 2 to 18 carbon atoms such as a vinyl group, a propenyl group or a hexenyl group; a cyclic alkene having 3 to 18 carbon atoms such as a cyclopentenyl group and a cyclohexenyl group; Methoxy, ethoxy, n-propoxy, isopropoxy, n-butoxy, second butoxy, tert-butoxy, pentyloxy, third pentyloxy, n-hexyloxy a straight or branched alkoxy group having 1 to 18 carbon atoms such as n-heptyloxy, n-octyloxy or trioctyloxy: methylthio, ethylthio, n-propylthio, isopropylthio Carbon number such as n-butylthio 'second butylthio group, third butyl thio group, pentylthio group, third pentylthio group, n-hexylthio group, n-heptylthio group, n-octylthio group and third octylthio group a linear or branched alkylthio group of 1 to 18; a carbon number of 6 or more such as a phenyl group, a tolyl group, a xylyl group or a fluorenyl group; An aryl group of 18; an aralkyl group having 7 to 18 carbon atoms such as a benzyl group or a phenethyl group; a linear or branched olefin having 2 to 18 carbon atoms such as a vinyloxy group, a propyleneoxy group or a hexenyloxy group; Oxyl; a linear or branched alkenethio group having 2 to 18 carbon atoms such as an ethylenethio group, a propylenethio group or a hexenylthio group; a fluorenyl group represented by -COR21; a carboxyl group; a methoxy group represented by -OCOR21. An amine group represented by -NR23R24; a mercaptoamine group represented by -NHCOR25; a urethane group represented by -NHCOOR26; an aminocarbenyl group represented by -CONR27R28; a sulfonic acid represented by -S〇2R32; Ester group; -C = group represented by NR33; -C=N-NR34R35; 2-thiol, 2-pyridyl, furyl, oxazolyl, benzoxazolyl, thiazolyl, A saturated or unsaturated heterocyclic group such as a benzothiazolyl, morpholinyl, pyrrolidinyl or tetrahydrothiophene dioxide group. R21 to R35 are independently a hydrogen atom, a substituent which may be substituted, a dilute group which may be substituted with -27-(24) 1354864, an aryl group which may be substituted, or an aralkyl group which may be substituted. In the above substituent group, an alkyl group, a cycloalkyl group, an alkenyl group, a cycloalkenyl group, an alkoxy group, an alkylthio group, a aryl group, an aralkyl group, a aryl group or an aryl group may be further substituted with a substituent. The substitution positions of the rings A to G and the linking group L of these substituents are not particularly limited. When a plurality of substituents are present, these may be the same or different. Rings A to G, a linking group are unsubstituted, or a substituent such as a halogen atom, a cyano group, an alkyl group which may be substituted, a cycloalkyl group which may be substituted, an alkenyl group which may be substituted, an alkyl group which may be substituted An oxy group, an aryl group which may be substituted, a aryl group which may be substituted, an alkenyl group which may be substituted, an alkenyl group which may be substituted, an amine group which may be substituted, a fluorenyl group which may be substituted , _. =City 33, the base of -C=N-NR34R35 is succulent _ corpse lamp base is replaced by a saturated or unsaturated heterocyclic group, when it has a substituent, the east w is opposite to you _ 吏The substituents are a halogen atom, a cyano group, an alkyl group which may be substituted, a cycloalkyl group which may be substituted, a substituted alkoxy group, an aryl group which may be substituted, an amine group which may be substituted '_C = an alkenyl group which may be substituted by a group represented by NR33, a aryl group substituted by a cocoa group, a group represented by -C=N_NR34r35, a saturated or unsaturated heterocyclic group. Rings A to G and linking _ L may have the above-mentioned substituents 尙 which may be substituted by any (tetra) group. The substituent is preferably methoxy, ethoxy, n-, isopropoxy or n-butoxy. Carbon number of the group, the second butoxy group, the third butoxy group, etc.] to the k-oxy group of & t _: methoxymethoxy, ethoxymethoxy, propoxymethoxy 'z oxygen a ethoxylated alkoxy group having a carbon number of 2 to a methoxy alkoxy group; a methoxymethoxymethoxy group; a methoxymethyl group TMZ-fc *. Ethyl ethoxy, methoxyethoxymethoxy, ethoxy-28 - (25) (25) 1354486 methoxy methoxy, ethoxyethoxy methoxy and other carbon number 3 An alkoxyalkoxy alkoxy group to ι 5; an aryl group having 6 to 12 carbon atoms such as a phenyl group, a tolyl group or a xylyl group (these may be further substituted by a substituent); a phenoxy group, a tolyloxy group, and a second group; a aryloxy group having 6 to 12 carbon atoms such as a tolyloxy group or a naphthyloxy group; an alkenyloxy group having 2 to 12 carbon atoms such as a vinyloxy group or a propyleneoxy group; an anthracenyl group such as an ethyl fluorenyl group; a propyl fluorenyl group; Nitro; hydroxy; tetrahydrofuranyl; amine; N,N-dimethylamino, N,N- Alkyl sulfonamide having a carbon number of 1 to 6 such as a diethylamino group and the like having a carbon number of from 10 to 10: a methylsulfonic acid amine group, an ethyl sulfonylamino group, a n-propyl alanine group a halogen atom such as a fluorine atom, a chlorine atom or a bromine atom; an alkoxy group having 2 to 7 carbon atoms such as a methoxycarbonyl group, an ethoxycarbonyl group, a n-propoxycarbonyl group, an isopropoxycarbonyl group or a n-butoxycarbonyl group; a carbonyl group having 2 to 7 carbon atoms such as a methylcarbonyloxy group, an ethylcarbonyloxy group, a n-propylcarbonyloxy group, an isopropylcarbonyloxy group or a n-butyloxy group; Carbonic groups 2 to 7 such as an aryloxy group, an ethoxycarbonyloxy group, a n-propoxycarbonyloxy group, an isopropoxycarbonyloxy group, a n-butoxycarbonyloxy group, a third butoxycarbonyloxy group Alkoxycarbonyloxy; a linear or branched alkenyl group having 2 to 18 carbon atoms such as a vinyl group, a propenyl group or a hexenyl group; The sensitizer represented by the above general formulas (XI) to (XIII) used in the present invention has a moderate absorption in the wavelength range of 3 90 to 43 Oiim, and thus is in the wavelength range of 330 to 450 nm, more preferably 350 to 430 nm. Has a great absorption. Therefore, it is preferable that the molecule contains four or more aromatic hydrocarbon rings and/or aromatic heterocyclic rings, and it is more preferable to contain five or more aromatic hydrocarbon rings and/or aromatic heterocyclic rings. Specific examples of the sensitizer represented by the above general formulas (XI) to (xm) -29-(26) 1354864 are as follows, but are not limited thereto. Example (XI-a) of the above sensitizer of general formula (XI) ύ

(Xl-b). (XI-c) H3c (XI-d) ch3 Η3〇-©>- 0^ P V= N-Nfe> (Xl-e)(Xl-b). (XI-c) H3c (XI-d) ch3 Η3〇-©>- 0^ P V= N-Nfe> (Xl-e)

OCH, (XI-f) •30- (27)1354864OCH, (XI-f) •30- (27)1354864

-31 - (28) 1354864 R41 修 N 發 R42 (XI — 1)-31 - (28) 1354864 R41 Repair N Hair R42 (XI — 1)

R 43 r R·4' R42 R43係分別獨立之以下的基。R 43 r R·4' R42 R43 are each independently a group below.

NN

9 M9 M

CH3CH3

NS —NO ch3 -ch3 -ch2ch3 —ch ch3 H〇) V.NS —NO ch3 -ch3 -ch2ch3 —ch ch3 H〇) V.

JJ

(XI -m) -32- (29)1354864(XI -m) -32- (29)1354864

CH CHCH CH

/- (ΧΠ-a) (ΧΠ-b)/- (ΧΠ-a) (ΧΠ-b)

CH, x. ch3CH, x. ch3

(ΧΠ-c) (XD-d)(ΧΠ-c) (XD-d)

-33- (30) 1354864-33- (30) 1354864

Vw H3c ch3Vw H3c ch3

(ΧΠ-e)(ΧΠ-e)

ch3 h3c ch3 h3cCh3 h3c ch3 h3c

(ΧΠ-f)(ΧΠ-f)

-CH = CH —CH = CH V. (ΧΠ-g) (上述(XII _ g )中,鍵結位置係在,末端之2個苯 基或末端之2個甲苯基中任2個的苯環上。) (ΧΠ-h) 6 φ-CH = CH -CH = CH V. (ΧΠ-g) (In the above (XII _ g ), the bonding position is at the end of the two phenyl groups or two of the two toluene groups at the end of the benzene ring Above.) (ΧΠ-h) 6 φ

CH=CH-CH=CHCH=CH-CH=CH

CH = CH-CH=CH -34- (31) 1354864CH = CH-CH=CH -34- (31) 1354864

R51, R52, R53係分別獨立之以下的基。/0>/0> 一 N — N X (X^CHg. F. Cl. Br) 普 /□>R51, R52, and R53 are each independently independent of the base. /0>/0> A N — N X (X^CHg. F. Cl. Br) Pu /□>

NN

X (x2=h. ch3)X (x2=h. ch3)

PP

CH, (ΧΠ-k) 35- (32)1354864CH, (ΧΠ-k) 35- (32)1354864

CH, CH3 H3C N CHi (χπ-ΐ) (ΧΠ-m) h3c-^^-CH, CH3 H3C N CHi (χπ-ΐ) (ΧΠ-m) h3c-^^-

ch3 NCh3 N

CH3 N CH3 (ΧΠ-η)CH3 N CH3 (ΧΠ-η)

H,C 普H, C

ch3 NCh3 N

CH,CH,

CH/ (ΧΠ-ο) CH' ch3CH/ (ΧΠ-ο) CH' ch3

(ΧΠ-ρ) 6 6 前述一般式(ΧΠΙ)之增感劑的例 -36- (33)1354864(ΧΠ-ρ) 6 6 Example of the sensitizer of the above general formula (ΧΠΙ) -36- (33) 1354486

(ΧΙΠ- a) (ΧΠ-b) (XI-e) (X 瓜一c) (Xm-d) -37- (34) 1354864 <聚合抑制劑> 本發明之負型藍紫色雷 細如後述,以乙烯性不飽和 組成之負型感光性組成物( 具有前述殘膜率-曝光量特ί 及前述最小曝光量時,如前 吸收之化合物作爲增感劑使 抑制劑的含量爲5〜60ppm 理想爲5 0 p p m,下限理想爲 換言之,如前述對於光 乙烯性不飽和化合物,在製 存安定性等時,可添加聚合 形成性等所用之高分子黏結 聚合抑制劑。爲了防止光聚 合等,除了添加於乙烯性不 聚合抑制劑外,視其含量平 之安定性等在調製組成物時 含量通常爲lOOppm以上, 合抑制劑之含量。 前述負型感光性組成物 少時,後述製造圖像形成材 保存安定性不佳,產生凝膠 成物層之熱聚合或經時聚合 ,製得之光阻圖像之圖型呈 射感光性組成物之組成物之詳 化合物與光聚合引發劑爲基本 N ,)較佳。特別是爲了有效的 或前述顯像速度-曝光量特性 述以在特定波長範圍具有極大 用,同時感光性組成物之聚合 爲佳。聚合抑制劑的含量上限 1 0 p p m ° 聚合性組成物中之必須成分之 造時防止聚合或賦予製品之保 抑制劑。對於賦予光聚合性層 材,在製造時視需要也可添加 合性組成物之熱聚合或經時聚 飽和化合物與光聚合引發劑之 衡,爲了確保光聚合性組成物 ,再添加之聚合抑制劑之合計 而本發明之較佳形態係降低聚 (N !)之聚合抑制劑之含量太 料時之感光性組成物塗佈液之 化,或不易防止負型感光性組 。而聚合抑制劑之含量太多時 圓形,底部形狀不佳,產生底 -38 - (35) 1354864 部拉引的現象等,解像度差。 本發明中’爲了將感光性組成物之聚合 控制在上述範圍內時,例如有(i )限制乙 合物所含有之聚合抑制劑之含量或使用其含 性不飽和化合物等的抑制方法,(i i )限制 所含有之聚合抑制劑之含量或使用其含量較 結材等的抑制方法,(iii )製造光阻圖像形 光性組成物塗佈液之乾燥條件例如爲高溫、 聚合抑制劑的方法,(iv )製造光阻圖像形 置藉由加熱等消耗聚合抑制劑之步驟的方法 光聚合性組成物之避免變性及生產性等,奉 (ii )的方法。 本發明中,聚合抑制劑例如有通常在光 作爲聚合抑制劑使用者,及無特別限定,具 酚 '甲基對苯二酚、第三丁基對苯二酚、2 基對苯二酚、對甲氧基苯酚等在結構中具有 之對苯二酚衍生物類,對苯醌、甲基對苯醌 苯醌、2,5 -二苯基對苯醌等在結構中具有 對苯醌衍生物類等,其中較佳者爲對苯二酚 別理想爲對甲氧基苯酚。 本發明中,感光性組成物之聚合抑制劑 以氣相色譜使用丙酮標準溶液所作成之檢量 組成物之塗佈液塗佈於甲支持基板,經乾燥 像形成材之感光性組成物層之〗0重量%溶 抑制劑之含量 烯性不飽和化 量較少之乙烯 高分子黏結材 少之高分子黏 成材料時之感 長時間等消耗 成材料時,設 等。其中考慮 S佳爲(i )或 聚合性組成物 體例有對苯二 ’ 5-二第三丁 對苯二酚結構 、第三丁基對 對苯醌結構之 衍生物類,特 之含量係依據 線,將感光性 所得之光阻圖 液之氣相色譜 -39- (36) (36)1354864 所得之測定値進行定量。 本發明之負型藍紫色雷射感光性組成物理想爲含有作 爲增感劑之前述化合物之負型感光性組成物’負型感光性 組成物例如有下述(N ,)〜(N3 ) ’其中較佳者爲(N ,) <負型感光性組成物(Νι ) > 本發明之負型藍紫色雷射感光性組成物中,負型感光 性組成物例如含有作爲增感劑之前述化合物,以乙烯性不 飽和化合物與光聚合引發劑爲基本組成之負型感光性組成 物(N】)。 本發明中,構成負型感光性組成物(N,)之乙烯性不 飽和化合物係在感光性組成物接受活性光線照射時,藉由 含有後述光聚合引發劑之光聚合引發系作用進行加成聚合 ’有時在分子內至少具有1個交聯、硬化之自由基聚合性 之乙烯性不飽和鍵的化合物。 本發明之乙烯性不飽和化合物係分子內具有1個乙烯 性不飽和鍵之化合物’具體例如有(甲基)丙烯酸[本發 明中’ 「(甲基)丙稀酸」係指「丙嫌酸」或/及[甲基丙 烯酸]]、巴豆酸、異巴豆酸、馬來酸、衣康酸、檸康酸等 不飽和殘酸及其院醋、(甲基)丙烯腈、(甲基)丙烯醯 胺 '苯乙烯等。其中從聚合性、交聯性及可增加因聚合性 、父聯性所產生之曝光部與非曝光部之顯像液溶解性之差 異等的觀點,以分子內具有2個以上乙烯性不飽和鍵之化 -40- (37) (37)1354864 合物爲佳,特別理想爲該不飽和鍵爲來自(甲基)丙稀驢 氧基之丙烯酸酯化合物。 分子內具有2個以上乙烯性不飽和鍵之化合物之代表 例有不飽和羧酸與聚羥基化合物之酯類、含(甲基)丙稀 醯氧基磷酸酯類、羥基(甲基)丙烯酸酯化合物與聚異氰 酸酯化合物之尿烷(甲基)丙烯酸酯類及(甲基)丙烯酸 或羥基(甲基)丙烯酸酯化合物與聚環氧化合物之環氧( 甲基)丙烯酸酯類等。 該酯類之具體例有前述不飽和羧酸、與乙二醇、聚乙 二醇(加成數2至14)、丙二醇、聚丙二醇(加成數2至 14) '丙二醇、丁二醇、新戊二醇、己二醇、壬二醇、三 經甲基乙院、四經甲基乙院、三經甲基丙院、丙三醇 '季 戊四醇、二季戊四醇 '山梨糖醇及其環氧乙烷加成物、環 氧丙烷加成物、二乙醇胺、三乙醇胺等脂肪族聚羥基化合 物之反應物,其具體例有乙二醇二(甲基)丙烯酸酯 '二 乙二醇二(甲基)丙烯酸酯、三乙二醇二(甲基)丙烯酸 酯、四乙二醇二(甲基)丙烯酸酯、九乙二醇二(甲基) 丙烯酸酯 '丙二醇二(甲基)丙烯酸酯、三丙二醇二(甲 基)丙烯酸酯、丁二醇二(甲基)丙烯酸酯、新戊二醇二 (甲基)丙烯酸酯、己二醇二(甲基)丙烯酸酯、壬二醇 二(甲基)丙烯酸酯、三羥甲基乙烷三(甲基)丙烯酸酯 、四羥甲基乙烷三(甲基)丙烯酸酯、三羥甲基丙烷二( 甲基)丙烯酸酯、三羥甲基丙烷三(甲基)丙烯酸酯、加 成三羥甲基丙烷環氧乙烷之三(甲基)丙烯酸酯、丙三醇 -41 - (38) (38)1354864 二(甲基)丙烯酸酯、丙三醇三(甲基)丙烯酸酯、加成 丙三醇環氧丙烷之三(甲基)丙烯酸酯、季戊四醇二(甲 基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、季戊四醇 四(甲基)丙烯酸酯、二季戊四醇二(甲基)丙烯酸酯、 二季戊四醇三(甲基)丙烯酸酯、二季戊四醇四(甲基) 丙烯酸酯、二季戊四醇五(甲基)丙烯酸酯、二季戊四醇 六(甲基)丙烯酸酯、山梨糖醇三(甲基)丙烯酸酯、山 梨糖醇四(甲基)丙烯酸酯、山梨糖醇五(甲基)丙烯酸 酯、山梨糖醇六(甲基)丙烯酸酯等及同樣之巴豆酸酯、 異巴豆酸酯、馬來酸酯、衣康酸酯、檸康酸酯等。 該酯類例如有前述不飽和羧酸與 '對苯二酚、間苯二 酚' 焦掊酚、雙酚F、雙酚A等芳香族聚羥基化合物,或 其環氧乙烷加成物、含環氧丙基化合物加成物之反應物, 具體例如有對苯二酚二(甲基)丙烯酸酯、間苯二酚二( 甲基)丙烯酸酯、焦掊酚三(甲基)丙烯酸酯、雙酚A二 (甲基)丙烯酸酯、雙酚A雙[羥基乙烯(甲基)丙烯酸 酯]、雙酚A雙[三羥基基乙烯(甲基)丙烯酸酯]、雙酚A 雙[五羥基乙烯(甲基)丙烯酸酯]、雙酚A雙[六羥基乙 烯(甲基)丙烯酸酯]、雙酚A雙[環氧丙基醚(甲基)丙 烯酸酯]等,另外如前述不飽和羧酸與、三(2·羥乙基)異 氰酸酯等雜環聚羥基化合物之反應物,具體例如有三(2-羥乙基)異氰酸酯之二(甲基)丙烯酸酯之二(甲基)丙 稀酸醋、二(甲基)丙燃酸醋等,而不飽和錢酸、多元较 酸與聚羥基化合物之反應物,具體例如有(甲基)丙烯酸 -42- (39) (39)1354864 、苯二甲酸與乙二醇之縮合物、(甲基)丙烯酸酯、馬來 酸與二乙二醇之縮合物、(甲基)丙烯酸酯、對苯二甲酸 與季戊四醇之縮合物、(甲基)丙烯酸、己二酸、丁二醇 與甘油之縮合物等。 該含(甲基)丙烯醯氧基之磷酸酯類只要是含(甲基 )丙烯醯氧基之磷酸酯化合物即無特別限制,其中以下述 一般式(Va)或(Vb)表示之化合物爲佳。 r13o ο(ΧΙΠ-a) (ΧΠ-b) (XI-e) (X melon-c) (Xm-d) -37- (34) 1354864 <Polymerization inhibitor> The negative blue-violet refinement of the present invention As described later, a negative photosensitive composition having an ethylenically unsaturated composition (having the aforementioned residual film ratio-exposure amount and the minimum exposure amount as described above, such as a compound which is absorbed as a sensitizer, the content of the inhibitor is 5~) 60 ppm is preferably 50 ppm, and the lower limit is desirably, in other words, in the case of the photo-ethylenically unsaturated compound, a polymer-bonding polymerization inhibitor used for polymerization formation or the like may be added in order to prevent photopolymerization and the like. In addition to the addition of the ethylene non-polymerization inhibitor, the content of the composition is usually 100 ppm or more, and the content of the inhibitor is determined when the composition is prepared. When the negative photosensitive composition is small, the manufacturing drawing will be described later. If the formation stability of the formed material is not good, the thermal polymerization or the polymerization of the gel-forming layer is generated, and the pattern of the photoresist image obtained is a detailed compound of the composition of the photosensitive composition and the photopolymerization initiator. For the basic N,) is better. In particular, in order to be effective or the aforementioned developing speed-exposure amount characteristic, it is described that it is extremely useful in a specific wavelength range, and polymerization of a photosensitive composition is preferable. The upper limit of the content of the polymerization inhibitor is 10 p p m ° The essential component in the polymerizable composition is formed to prevent polymerization or to impart a protective agent to the product. In the case of imparting a photopolymerizable layer, a thermal polymerization or a mixture of a polysaturated compound and a photopolymerization initiator may be added as needed in the production, and a polymerization inhibitor may be added to ensure a photopolymerizable composition. In a preferred embodiment of the present invention, the photosensitive composition coating liquid is reduced when the content of the polymerization inhibitor of poly(N?) is too large, or the negative photosensitive group is not easily prevented. When the content of the polymerization inhibitor is too large, the shape of the bottom is not good, and the shape of the bottom is not good, and the phenomenon of pulling the bottom -38 - (35) 1354864 is generated, and the resolution is poor. In the present invention, when the polymerization of the photosensitive composition is controlled within the above range, for example, (i) a method for suppressing the content of the polymerization inhibitor contained in the ethylene compound or using the unsaturated unsaturated compound or the like, Ii) a method of suppressing the content of the polymerization inhibitor contained therein or using the content of the coating material or the like, and (iii) drying conditions for producing the photoresist image-formable photo-coating composition, for example, a high temperature, a polymerization inhibitor Method (iv) A method of producing a photoresist image by a step of consuming a polymerization inhibitor by heating or the like, and avoiding denaturation and productivity of the photopolymerizable composition, and the method of (ii). In the present invention, the polymerization inhibitor is, for example, generally used as a polymerization inhibitor in light, and is not particularly limited, and has phenol 'methyl hydroquinone, t-butyl hydroquinone, 2-base hydroquinone, P-benzoquinone derivatives such as p-methoxyphenol and the like, p-benzoquinone, methyl p-benzoquinone, 2,5-diphenyl-p-benzoquinone, etc. Among them, the preferred one is hydroquinone, which is preferably p-methoxyphenol. In the present invention, the polymerization inhibitor of the photosensitive composition is applied to a nail-supporting substrate by a coating liquid of a calibration composition prepared by using an acetone standard solution by gas chromatography, and the photosensitive composition layer of the image-forming material is dried. 〗 〖When the content of the oxidizing inhibitor is 0% by weight, the amount of the olefinic unsaturation is less than that of the polymer-bonding material having a small amount of the ethylene polymer binder. Among them, S (I) or a polymerizable composition is considered to have a structure of p-phenylene-5-di-tert-butyl hydroquinone and a derivative of a tert-butyl-p-benzoquinone structure, and the content is based on The measurement enthalpy obtained by gas chromatography-39-(36) (36) 1354864 of the photosensitizing photoresist is quantified. The negative blue-violet laser photosensitive composition of the present invention is preferably a negative photosensitive composition containing the above-mentioned compound as a sensitizer. The negative photosensitive composition has, for example, the following (N , ) to (N3 ) ' The preferred one is (N , ) < negative photosensitive composition (Νι ) > In the negative blue-violet laser photosensitive composition of the present invention, the negative photosensitive composition contains, for example, a sensitizer The above compound is a negative photosensitive composition (N) having an ethylenically unsaturated compound and a photopolymerization initiator as a basic composition. In the present invention, the ethylenically unsaturated compound constituting the negative photosensitive composition (N) is added by a photopolymerization initiator containing a photopolymerization initiator to be described later when the photosensitive composition is irradiated with active light. A compound which polymerizes at least one crosslinked and hardened radically polymerizable ethylenically unsaturated bond in the molecule. The ethylenically unsaturated compound of the present invention is a compound having one ethylenically unsaturated bond in the molecule, and specifically, for example, (meth)acrylic acid [in the present invention, '(meth)acrylic acid) means "acrylic acid Or / and [methacrylic acid]], crotonic acid, isocrotonic acid, maleic acid, itaconic acid, citraconic acid and other unsaturated residual acid and its vinegar, (meth)acrylonitrile, (methyl) Acrylamide styrene and the like. Among them, two or more ethylenic unsaturations are contained in the molecule from the viewpoints of the polymerizability, the crosslinkability, and the difference in the solubility of the developing solution between the exposed portion and the non-exposed portion due to the polymerizability and the paternity. It is preferred that the bond is a compound of -40(37)(37)1354864, and it is particularly preferred that the unsaturated bond is an acrylate compound derived from a (meth) acryloyloxy group. Representative examples of compounds having two or more ethylenically unsaturated bonds in the molecule include esters of unsaturated carboxylic acids and polyhydroxy compounds, (meth) acryloxy phosphates, and hydroxy (meth) acrylates. A urethane (meth) acrylate of a compound and a polyisocyanate compound, an (meth)acrylic acid or a hydroxy (meth) acrylate compound, and an epoxy (meth) acrylate of a polyepoxide. Specific examples of the ester include the aforementioned unsaturated carboxylic acid, ethylene glycol, polyethylene glycol (addition number 2 to 14), propylene glycol, polypropylene glycol (addition number 2 to 14), propylene glycol, butanediol, and neopentyl Glycol, hexanediol, decanediol, Sanjing Methylamine, Sijing Methylamine, Sanjing Methylamine, glycerol 'pentaerythritol, dipentaerythritol' sorbitol and its ethylene oxide A reactant of an aliphatic polyhydroxy compound such as an adduct, a propylene oxide adduct, diethanolamine or triethanolamine, and a specific example thereof is ethylene glycol di(meth)acrylate 'diethylene glycol di(methyl) Acrylate, triethylene glycol di(meth)acrylate, tetraethylene glycol di(meth)acrylate, nonaethylene glycol di(meth)acrylate 'propylene glycol di(meth)acrylate, tripropylene glycol Di(meth)acrylate, butanediol di(meth)acrylate, neopentyl glycol di(meth)acrylate, hexanediol di(meth)acrylate, decanediol di(methyl) Acrylate, trimethylolethane tri(meth)acrylate, tetramethylolethane tris(methyl) Acrylate, trimethylolpropane di(meth)acrylate, trimethylolpropane tri(meth)acrylate, trimethylolpropane ethylene oxide tri(meth)acrylate, C Triol-41 - (38) (38) 1354864 di(meth) acrylate, glycerol tri(meth) acrylate, addition glycerol propylene oxide tris (meth) acrylate, pentaerythritol II (meth) acrylate, pentaerythritol tri (meth) acrylate, pentaerythritol tetra (meth) acrylate, dipentaerythritol di (meth) acrylate, dipentaerythritol tri (meth) acrylate, dipentaerythritol tetra (a) Base) acrylate, dipentaerythritol penta (meth) acrylate, dipentaerythritol hexa (meth) acrylate, sorbitol tri (meth) acrylate, sorbitol tetra (meth) acrylate, sorbitol Penta(meth)acrylate, sorbitol hexa(meth)acrylate, and the like, and the same crotonate, isocrotate, maleate, itaconate, citraconate, and the like. Examples of the ester include an aromatic polyhydroxy compound such as the above unsaturated carboxylic acid and 'hydroquinone, resorcinol' pyrophenol, bisphenol F, and bisphenol A, or an ethylene oxide adduct thereof. The reactant containing the epoxy propyl compound adduct, specifically, for example, hydroquinone di(meth)acrylate, resorcinol di(meth)acrylate, pyrogallol tri(meth)acrylate , bisphenol A di(meth) acrylate, bisphenol A bis [hydroxyethylene (meth) acrylate], bisphenol A bis [trihydroxy ethylene (meth) acrylate], bisphenol A bis [five Hydroxyethylene (meth) acrylate], bisphenol A bis [hexahydroxyethylene (meth) acrylate], bisphenol A bis [epoxy propyl ether (meth) acrylate], etc. a reaction product of a carboxylic acid and a heterocyclic polyhydroxy compound such as tris(2-hydroxyethyl)isocyanate, specifically, for example, a di(meth)acrylate di(meth)acrylate of tris(2-hydroxyethyl)isocyanate Acid vinegar, di(methyl) propylene sulphuric acid vinegar, etc., unsaturated acid, multi-acid and polyhydroxy compound reactants, specific For example, there are (meth)acrylic acid-42-(39) (39) 1354864, a condensate of phthalic acid and ethylene glycol, a (meth) acrylate, a condensate of maleic acid and diethylene glycol, (A) a condensate of acrylate, terephthalic acid and pentaerythritol, a condensate of (meth)acrylic acid, adipic acid, butanediol and glycerin, and the like. The (meth) acryloxy group-containing phosphate is not particularly limited as long as it is a (meth) acryloxy group-containing phosphate compound, and the compound represented by the following general formula (Va) or (Vb) is good. R13o ο

r I II N IIr I II N II

[CH2 =C—C—〇— (CHZ ) n —〇] m —P— (OH) 3-„ (Va) r13o o[CH2 = C—C—〇—(CHZ) n —〇] m —P— (OH) 3-„ (Va) r13o o

r I II II CCHa =C-C-〇- (CH2 CH2 O) n ] m -P- (OH) 3-^ (Vb) 〔式(Va)或(Vb)中’ R13爲氫原子或甲基,n爲 1〜25之整數,m爲1、2或3〕。 π爲1〜1〇,較佳爲1〜4,這些具體例有(甲基)丙 烯醯氧基乙基磷酸酯、雙[(甲基)丙烯醯氧基乙基]磷酸 酯、(甲基)丙烯醯氧基乙二醇磷酸酯等,這些可單獨使 用或以混合物形態來使用。 其尿烷(甲基)丙烯酸酯類之具體例有羥甲基(甲基 )丙烯酸酯' 羥乙基(甲基)丙烯酸酯、甘油二(甲基) 二(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、四 羥甲基乙烷三(甲基)丙烯酸酯等羥基(甲基)丙烯酸酯 化合物與、六甲撐二異氰酸酯、2,4,4-三甲基六甲撐二 異氰酸酯、賴胺酸甲酯二異氰酸酯、賴胺酸曱酯三異氰酸 酯、—聚酸二異氰酸酯、1,6,11-^——烷三異氰酯、], -43- (40) (40)1354864 3 ’ 6-六甲撑三異氰酸酯、1,8二異氰酸酯-4 •異氰酸酯甲 基辛院等脂肪族聚峩氰酸酯,環己烷二異氰酸酯、二甲基 環己垸二異氨酸酯、4,4,-甲撐雙(環己基異氰酸酯)、 異佛爾嗣二異氰酸酯、二環庚烷三異氰酸酯等脂環聚異氰 酸醋’對苯撑二異氰酸酯、2,4 -甲苯二異氰酸酯、2,6-甲苯二異氰酸醋、苯二甲基二異氰酸酯、四甲基苯二甲基 二氨酸醋、4,4'-二苯基甲烷二異氰酸酯、聯甲苯胺二異 氛酸' I ’ 5-萘二異氰酸酯、三(異氰酸酯苯基甲烷) ' Η (異氰酸醋苯基)硫磷酸酯等芳香族聚異氰酸酯、異 等雜環聚異氰酸酯等聚氰酸酯化合物之反應物等 脲院(甲基)丙烯酸酯類較佳者爲1分子內具有 4個以上之脲烷鍵〔_NH_C鄰鄰〕及4個以上之丙烯醯氧 基之化合物。該化合物例如季戊四醇、聚甘油等1分子中 具有4個以上之羥基之化合物與六甲撐二異氰酸酯、三甲 基六甲撐二異氰酸酯、異佛爾酮二異氰酸酯、苯二甲基二 異氰酸酯等之二異氰酸酯化合物反應所得之化合物(1-]) '或乙二醇等1分子中具有2個以上之羥基之化合物與旭 化成工業公司製「Duranate24A-100」、「Duranate22A-75PXj 、 「D ura nat e 2 1 S - 7 5 E」、「D u r a n a t e 1 8 H - 7 0 B」等 縮二脲型、「DuranateP-30】-75Ej 、 「DuranateE-402-90T」、「Duranate E-405-80T」等加合物型等1分子中具 有3個以上之異氰酸酯基之化合物反應所得之化合物(】_ 2 )、或使異氰酸酯乙基(甲基)丙烯酸酯產生聚合或共聚 -44- (41) (41)1354864 所得之化合物(1-3 )等之1分子中具有4個以上,理想舄 6個以上之異氰酸酯基之化合物等,具體例旭化成工業公 司製「Duranate ME20-100」(i)與季戊四醇二(甲基) 丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、二季戊四醇二 (甲基)丙烯酸酯、二季戊四醇三(甲基)丙烯酸酯 '二 季戊四醇四(甲基)丙烯酸酯、二季戊四醇五(甲基)丙 烯酸酯等之1分子中具有1個以上之羥基及2個以上,理 想爲3個以上之(甲基)丙烯醯氧基之化合物(ii)反應 所得。 前述化合物(i)之重量平均分子量較佳爲500至 200,000,更佳爲1,000至150,〇〇〇。前述脲烷(甲基)丙 烯酸酯類之重量平均分子量較佳爲600至150,000。具有 6個以上之脲烷鍵較佳,具有8個以上更佳,具有6個以 上’更佳爲8個以上之(甲基)丙烯醯氧基。 @種脲烧(甲基)丙燃酸酯類例如可藉由使前述化合 物(i)與前述化合物(ii)在甲苯或乙酸乙酯等之有機溶 媒中’前者異氰酸酯基與後者羥基之莫耳比爲1/1〇〜1〇/] ’必要時使用二月桂酸正丁基錫等觸媒,以1〇〜15〇。(:反 應5分鐘〜3小時的方法來製造。 本發明中’前述脲烷(甲基)丙烯酸酯類中較佳者爲 下述一般式(VI)表示者。r I II II CCHa =CC-〇-(CH2 CH2 O) n ] m -P- (OH) 3-^ (Vb) [In the formula (Va) or (Vb), 'R13 is a hydrogen atom or a methyl group, n Is an integer from 1 to 25, and m is 1, 2 or 3]. π is 1 to 1 Torr, preferably 1 to 4, and specific examples thereof are (meth) acryloxyethyl phosphate, bis[(meth) propylene methoxyethyl] phosphate, (methyl) Ethylene oxyethylene glycol phosphate or the like, which may be used singly or in the form of a mixture. Specific examples of the urethane (meth) acrylate are hydroxymethyl (meth) acrylate 'hydroxyethyl (meth) acrylate, glycerol di (methyl) di (meth) acrylate, pentaerythritol III a hydroxy (meth) acrylate compound such as (meth) acrylate or tetramethylol ethane tri(meth) acrylate, hexamethylene diisocyanate, 2,4,4-trimethyl hexamethylene diisocyanate, Methyl lysine diisocyanate, decyl decyl triisocyanate, polyacid diisocyanate, 1,6,11-^-alkyl triisocyanate,], -43- (40) (40) 1354864 3 '6-hexamethylene triisocyanate, 1,8 diisocyanate-4 • Aliphatic polyphthalocyanate such as isocyanate methyl octyl, cyclohexane diisocyanate, dimethylcyclohexyl diisinate, 4, 4,-Methylene bis(cyclohexyl isocyanate), isophorol diisocyanate, dicycloheptane triisocyanate, etc. alicyclic polyisocyanate 'p-phenylene diisocyanate, 2,4-toluene diisocyanate, 2, 6-toluene diisocyanate, benzodimethyl diisocyanate, tetramethyl benzene dimethyl Sour vinegar, 4,4'-diphenylmethane diisocyanate, tolidine diiso-acid ' I ' 5-naphthalene diisocyanate, tris(isocyanate phenylmethane) ' 异 (isocyanate phenyl) thiophosphate A urea compound (meth) acrylate such as a reaction product of an aromatic polyisocyanate such as an ester or a polycyanate compound such as a heterocyclic polyisocyanate preferably has four or more urethane bonds in one molecule [_NH_C adjacent And a compound of four or more acryloxy groups. This compound is, for example, a compound having four or more hydroxyl groups in one molecule such as pentaerythritol or polyglycerin, and a diisocyanate such as hexamethylene diisocyanate, trimethylhexamethylene diisocyanate, isophorone diisocyanate or benzodimethyl diisocyanate. Compound (1-]) ' obtained by compound reaction or a compound having two or more hydroxyl groups in one molecule such as ethylene glycol, and "Duranate 24A-100", "Duranate 22A-75PXj, "D ura nat e 2 1 by Asahi Kasei Kogyo Co., Ltd. S- 7 5 E", "D uranate 1 8 H - 7 0 B" and other biuret types, "Duranate P-30" - 75Ej, "Duranate E-402-90T", "Duranate E-405-80T", etc. a compound obtained by reacting a compound having three or more isocyanate groups in one molecule, such as a compound, or a polymerization or copolymerization of an isocyanate ethyl (meth) acrylate - 44- (41) (41) 1354864 A compound having four or more molecules, such as a compound (1-3), and a compound having an isocyanate group of 6 or more, etc., and a specific example of "Duranate ME20-100" (i) and pentaerythritol II (see: AOpen Chemical Industries, Ltd.) methyl) Acrylate, pentaerythritol tri(meth)acrylate, dipentaerythritol di(meth)acrylate, dipentaerythritol tri(meth)acrylate dipentaerythritol tetra(meth)acrylate, dipentaerythritol penta(meth)acrylate A compound (ii) having one or more hydroxyl groups and two or more, preferably three or more (meth) propylene fluorenyloxy groups, is obtained by reacting one molecule of the ester or the like. The weight average molecular weight of the aforementioned compound (i) is preferably from 500 to 200,000, more preferably from 1,000 to 150, Å. The weight average molecular weight of the aforementioned urethane (meth) acrylate is preferably from 600 to 150,000. It is preferable to have 6 or more urethane bonds, more preferably 8 or more, and 6 or more and more preferably 8 or more (meth) acryloxy groups. For example, the above-mentioned compound (i) and the aforementioned compound (ii) can be used in an organic solvent such as toluene or ethyl acetate, and the former isocyanate group and the latter hydroxyl group. The ratio is 1/1〇~1〇/] 'If necessary, use a catalyst such as n-butyltin dilaurate to 1〇~15〇. (The reaction is carried out by a method of 5 minutes to 3 hours. In the present invention, the urethane (meth) acrylate is preferably represented by the following general formula (VI).

Ra -fRb-一Rd ⑽Ra -fRb--Rd (10)

-X 〔式(VI)中’ Ra係具有伸烷氧基或伸芳氧基之重 -45- (42) 1354864 覆結構,且具有4〜20個可與Rb鍵結之羥基,Ra與 係各自獨立碳數1〜1 0之伸烷基,Rd係具有1〜1 0個 甲基)丙烯醯氧基之有機殘基,Ra、Rb、Rc及Rd可具 取代基’ x爲4〜20的整數,y爲0〜15的整數,z爲1 1 5的整數〕。 式(VI )中之Ra之伸烷氧基之重覆結構例如有來 丙三醇、甘油、季戊四醇等者,伸芳氧基之重覆結構例 有來自焦掊酚、1,3,5 -苯三醇等者。Rb及Rc之伸烷 之碳數理想爲1〜5,Rd之(甲基)丙烯醯氧基之碳數 想爲1〜7,X爲4〜15,y爲1〜10,z爲1〜10。-X [In the formula (VI), the Ra group has a weight of -45-(42) 1354864 covering an alkoxy group or an aryloxy group, and has 4 to 20 hydroxyl groups bonded to Rb, Ra and Each of the alkyl groups having an independent carbon number of 1 to 10, the Rd has an organic residue of 1 to 10 methyl) acryloxy groups, and Ra, Rb, Rc and Rd may have a substituent 'x 4 to 20 An integer, y is an integer from 0 to 15, and z is an integer of 1 1 5]. The repetitive structure of the alkoxy group of Ra in the formula (VI) is, for example, glycerol, glycerin or pentaerythritol, and the repetitive structure of the extended aryloxy group is derived from pyrogallol, 1, 3, 5 - Benzene alcohol and the like. The carbon number of the alkylene of Rb and Rc is desirably 1 to 5, the carbon number of the (meth)acrylomethoxy group of Rd is 1 to 7, X is 4 to 15, y is 1 to 10, and z is 1 to 5. 10.

Ra較佳爲下述式〔式中k爲2〜10的整數〕,Ra Rb係各自獨立之二伸甲基、單甲基二伸甲基、或三伸 基,而Rd較佳爲下述式者。Ra is preferably a formula (wherein k is an integer of 2 to 10), and Ra Rb is independently a methyl group, a monomethyldimethyl group or a trisyl group, and Rd is preferably the following Type.

Ra 0Ra 0

I 0 ch2 fH2 9I 0 ch2 fH2 9

QQ

Rb ( 有 白 如 基 理 與 甲Rb (with white as the base and a

fH2 CH2 <p-CH2- 0-Q CH2 〇 ch2 π V Q V QfH2 CH2 <p-CH2- 0-Q CH2 〇 ch2 π V Q V Q

Rd : 2 o-ch2-ch—(ch2~o~q) (但,Q爲-c-ch=ch2 -46 - (43) (43)1354864 該環氧(甲基)丙烯酸酯類之具體例有(甲基)丙燦 酸’或上述羥基(甲基)丙烯酸酯化合物與(聚)乙二醇 聚縮水甘油醚、(聚)丙二醇聚縮水甘油醚、(聚)四甲 二醇聚縮水甘油醚、(聚)五甲二醇聚縮水甘油醚、(聚 )新戊二醇聚縮水甘油醚、(聚)六甲二醇聚縮水甘油酸 、(聚)三羥甲基丙烷聚縮水甘油醚、(聚)甘油聚縮水 甘油醚' (聚)山梨糖醇聚縮水甘油醚等脂肪族聚環氧化 合物,苯酚酚醛淸漆聚環氧化合物' 溴化苯酚酚醛淸漆聚 環氧化合物、(鄰、間、對)甲酚酚醛淸漆聚環氧化合物 、雙酚A聚環氧化合物、雙酚F聚環氧化合物等芳香族聚 環氧化合物,山梨糖醇酐聚縮水甘油醚、三縮水甘油基異 氰尿酸酯、三縮水甘油基三(2 -羥乙基)異氰尿酸等雜環 聚環氧化合物等聚環氧化合物之反應物等。 該其他乙烯性不飽和化合物除了上述以外,例如有乙 撐雙(甲基)丙烯醯胺等(甲基)丙烯醯胺類、苯二甲酸 二烯丙酯等烯丙酯類,二乙烯基苯二甲酸酯等含乙烯基化 合物類等。以上之乙烯性不飽和化合物可單獨使用或2種 以上倂用。 乙烯性不飽和化合物在本發明中較佳者爲酯(甲基) 丙烯酸酯類、含(甲基)丙烯醯氧基磷酸酯類、或脲烷( 甲基)丙烯酸酯類,其中更理想者爲酯(甲基)丙烯酸酯 類,該酯(甲基)丙烯酸酯類中更佳者爲聚乙二醇、聚丙 二醇或雙酚A之聚環氧乙烷加成物等之含聚氧基伸烷基, 含有2個以上(甲基)丙烯醯氧基之酯(甲基)丙烯酸酯 -47 - (44)1354864 類β 本發明中,構成負型感光性組成物(Ν,)之光聚合引 發劑係在前述增感劑等共同存在下,被光照射時,接受增 感劑之光激發能量,產生活性種之自由基,使前述乙烯性 不飽和化合物產生聚合的活性化合物,例如有六芳基聯二 咪唑系化合物、茂鈦系化合物、鹵化烴衍生物、碘鎗鹽及 有機硼酸鹽等。其中從感光性組成物之感度、對基板之密 合性及保存安定性等方面而言,較佳者爲六芳基聯二咪唑 系化合物、茂鈦系化合物及有機硼酸鹽,從黃色燈下之安 全燈性方面而言’特佳者爲六芳基聯二咪唑系化合物。 該六芳基聯二咪唑系化合物之具體例有2,2,_雙(鄰 氯苯基)-4’ 4’’ 5,5’ -四苯基聯二咪挫、2,2,-雙(鄰氯 苯基)-4’ 4',5,5,-四(對甲基苯基)聯二咪唑、2,2、 雙(鄰氯苯基)-4,4,,5’ 5,-四(對甲氧基苯基)聯二 咪唑、2,2’-雙(鄰,對二氯苯基)_4,4,,5,四(對 甲氧基苯基)聯二咪唑、2, 2,-雙(鄰氯苯基)_4, 4,,5 ’ 5'-四(對乙氧基擬苯基)聯二咪哩、2,2,-雙(鄰氯苯 基)·4,4’,5,5’-四(對氯苯基)聯二咪唑、2, 2,·雙( 對二氯苯基)聯二咪 鄰氯苯基)-4,4',5,5,-四(鄰 唑、2,2,-雙(鄰,對二氯苯基)·4 , 4, , 5,5,_四(鄰, 對二氯苯基)聯二咪唑、2,2,_雙(鄰氯苯基)_4,4,,^ ’ 5’ -四(對氟苯基)聯二咪唑、2,2,·雙(鄰氯苯基)^ ,4',5,5'-四(鄰,對二溴苯基)聯二咪卩坐、2,2,_雙( 鄰溴苯基)-4 ’ 4, ’ 5,5,_四(鄰,對二氯苯基)聯二味 -48 - (45) (45)1354864 唑、2,2'-雙(鄰溴苯基)-4,4,,5,5,-四(對碘苯基) 聯二咪唑、2,2、雙(鄰溴苯基)_4,4,,5,5,-四(鄰 氯·對甲氧基苯基)聯二咪唑、2,2,-雙(鄰氯苯基)-4, 4,,5’ 5'-四(對氯萘基)聯二咪唑等。其中以六苯基聯 二咪唑化合物爲佳,鍵結於咪唑環上之2,2,_位置之苯環 的鄰位被鹵原子取代者更佳,特別是鍵結於咪唑環上之4 ’ 4',5,5'-位置之苯環爲無取代或被鹵原子或烷氧基羰 基取代者更佳。 作爲感光性組成物之光聚合引發劑之習知的六芳基二 味哩系化合物係熔點爲丨9〇 〇c以上,例如丨96至2〇2 。〇 ’且波長I54 A之X線折射光譜中,布雷格角(2Θ±0.2。 )9 · 9 2 5具有最大折射峰値者。從對於塗佈溶劑之溶解性 及感光丨生組成物中之分散安定性等方面而言,本發明之六 方基—味哩系化合物最佳者爲熔點1 8 0。{:以下,更佳爲 以下,且波長1 .5 4 A之X線折射光譜中布雷格角 (2θ±〇 2 。 、 Λ )21.16具有最大折射峰値者。該最佳之六芳 基^ ~味呼系化合物例如有2 ’ 2,-雙(鄰氯苯基)_4,4, 5 四苯基聯二咪唑、2,2,·雙(鄰,對二氯苯基)-4 4 5,四苯基聯二咪唑、2,2,·雙(鄰溴苯基)_4, 4 5 S'_四苯基聯二咪唑、2,2,-雙(鄰,對二氯苯基 )4 4 ’5’5’_四(對甲氧基苯基)聯二咪唑等,宜由 較佳者胃 〆、 爲’ 2’ 2'_雙(鄰氯苯基)-4, 4,,5, 5,_四苯基聯 二咪唑、q 2,2、雙(鄰,對二氯苯基)·4 , 4,,5,5,四( 對甲氧基苯基)聯二咪唑。 -49- (46) (46)1354864 上述二茂鈦系化合物之具體例如有二環戊二烯基鈦二 氯化物、二戊二烯基鈦聯苯、二環戊二烯鈦雙(2,4 -二 氟苯基)、二環戊二烯基鈦雙(2,6 -二氟苯基)、二環 戊二烯基鈦雙(2,4,6-三氟苯基)、二環戊二烯基鈦雙 (2,3,5,6 -四氟苯基)、二環戊二烯基鈦雙(2,3,4 ,5,6-五氟苯基)、二(甲基環戊二烯基)鈦雙(2,6-二氟苯基)、二(甲基環戊二烯基)鈦雙(2,3,4,5, 6-五氟苯基)、二環戊二烯基鈦雙[2,6-二氟-3- ( 1-咄咯 基)苯基]等。其中又以具有二環戊二烯基結構及聯苯構 造之鈦化合物爲佳’在聯苯環之鄰位被鹵原子取代者更佳 〇 該鹵化烴衍生物例如有鹵化鏈烷 '鹵甲基化S -三嗪衍 生物及鹵甲基化】’ 3,4-噁二唑衍生物等,該鹵化鏈烷之 具體例有二氯甲烷、三氯甲烷、1,2-二氯乙院、1,2_二 溴乙烷等。 該鹵甲基化s-三嗪衍生物之具體例如有2 , 4,6_三( 單氯甲基)-s-三嗪、2 ’ 4,6-三(二氯甲基)-s_三嘆、2 ,4,6-三(三氯甲基)-s-二嗪、2 -甲基-4,6 -雙(三氯甲 基)-s -三D秦、2 -正丙基-4,6·雙(二氯甲基)_s_三嗪' 2_ (α,α,β-三氯乙基)-4,6·雙(三氯甲基)_s_三嘻、2_ 苯基-4,6-雙(三氯甲基)-s-三嗪' 2·(對甲氧基苯基)_ 4’ 6-雙(三氯甲基)-s-三嗪、2-(3,4-環氧苯基)-4, 6-雙(三氯甲基)-s-三嗪、2·(對氯苯基)6·雙(三 氯甲基)-s-三嗪'2- [1-(對甲氧基苯基)_2,4· 丁二烯 •50- (47) (47)1354864 基]-4,6-雙(三氯甲基)-s-三嗪、2-苯乙烯基-4,6-雙( 三氯甲基)-s-三嗪、2-(對甲氧基苯乙烯基)-4,6-雙( 三氯甲基)三嗪、2-(對甲氧基-間羥基苯乙烯基)-4 ,6-雙(三氯甲基)-s-三嗪、2-(對-異丙氧基苯乙烯基 )-4,6-雙(三氯甲基)-s-三嗪' 2-(對甲苯基)-4,6-雙(三氯甲基)-s-三嗪、2-(對甲氧基萘基)-4,6-雙( 三氯甲基)-s-三嗪、2-(對乙氧基萘基)-4,6-雙(三氯 甲基)-s-三嗪、2-(對乙氧基羰基萘基)-4,6-雙(三氯 甲基)-s-三嗪、2-苯基硫-4,6-雙(三氯甲基)-s-三嗪、 2-苯甲基硫_4,6-雙(三氯甲基)-s-三嗪、2,4,6-三( 二溴甲基)-s -三嗪、2,4,6 -三(三溴甲基)-s -三嗪、2 -甲基-4,6-雙(三溴甲基)-s-三嗪、2·甲氧基-4,6·雙( 三溴甲基)-s-三嗪等。其中以雙(三鹵甲基)-s-三嗪爲 佳,2 -甲基-4,6 -雙(三氯甲基)-s-三嗪、2-苯基-4,6-雙(三氯甲基)-s-三嗪、2-(對甲氧基苯基)-4,6-雙( 三氯甲基)-s-三嗪、2-(3,4-環氧苯基)-4,6-雙(三氯 甲基)-s-三嗪、2-[1-(對甲氧基苯基)-2,4 -丁二烯基]-4,6-雙(三氯甲基)-s-三嗪' 2-(對甲氧基苯乙烯基)-4,6-雙(三氯甲基)-s-三嗪、2-(對甲氧基-間羥基苯乙 烯基)-4,6-雙(三氯甲基)-s-三嗪、2-(對異丙氧基苯 乙烯基)-4,6-雙(三氯甲基)-s-三嗪等更佳。 鹵甲基化1,3,4-噁二唑衍生物之具體例有2-(對甲 氧基苯基)-5-三氯甲基-1,3,4-噁二唑、2-(對甲氧基 苯乙烯基)-5 -三氯甲基-1,3,4 -噁二唑、2 -(鄰苯並呋 -51 - (48) 1354864 喃基)-5 -三氯甲基-1,3,4 -噁二唑、2-〔β-(鄰苯 喃基)乙烯基〕-5 -三氯甲基_],3,4 -噁二唑等。 又’該碘鐺鹽例如有二苯基碘鎗六氟砷酸鹽、二 碘鏡四氟硼酸鹽、二苯基碘鎗對甲苯磺酸鹽、二苯基 莰磺酸鹽等二芳基碘鑰鹽,二環己基碘鎰六氟砷酸鹽 環己基碘鎗四氟硼酸鹽、二環己基碘鎰對甲苯磺酸鹽 環己基碘鎗莰磺酸鹽等二環烷基碘鎗鹽等,其中較佳 二芳基碘鎗鹽。 有機硼酸鹽例如有機硼銨錯合物、有機硼錢錯合 有機硼鏑錯合物、有機硼羥基毓錯合物、有機硼碘鎗 物、有機硼過渡金屬配位錯合物等。該有機硼陰離子 有正丁基三苯基硼陰離子、正丁基三(2,4,6-三甲 基)硼陰離子、正丁基三(對甲氧基苯基)硼陰離子 丁基三(對氟苯基)硼陰離子、正丁基三(間氟苯基 陰離子、正丁基三(3-氟-4-甲基苯基)硼陰離子、正 三(2,6-二氟苯基)硼陰離子 '正丁基三(2,4,6-苯基)硼陰離子、正丁基三(2,3,4,5,6-五氟苯 硼陰離子、正丁基三(對氯苯基)硼陰離子、正丁基 2,6_二氟-3·吡咯基苯基)硼陰離子等烷基三苯基硼 子,而對陽離子例如有鞍陽離子 '鐃陽離子、鏡陽離 碘鎗陽離子等鎗化合物,其中較佳者爲四烷基銨等之 銨陽離子。 本發明之負型藍紫色雷射感光性組成物中,構成 感光性組成物(Ν ,)之前述增感劑、前述乙烯性不飽 並呋 苯基 姚鏡 者爲 物、 錯合 例如 基苯 、正 )硼 丁基 三氟 基) 三( 陰離 子、 有機 負型 和化 -52- (49)1354864 台物及前述光聚合引發劑之 組成物(化)之全量時,前 %,前述乙烯性不飽和化合 光聚合引發劑含有0.5〜50 含有0.1〜10重量%,前述 70重量%,前述光聚合引發 本發明之負型感光性組 前述乙烯性不飽和化合物及 提高感光性組成物層在基板 含有鹼可溶性樹脂,該鹼可 樹脂及含羧基苯乙烯系樹脂 )中較佳爲含羧基苯乙烯系 含羧基苯乙烯系樹脂具 豆酸、異巴豆酸、馬來酸、 不飽和羧酸,與苯乙烯、α-基(甲基)丙烯酸酯、乙基 基)丙烯酸酯、丁基(甲基 烯酸酯、己基(甲基)丙烯 酸酯、2-乙基己基(甲基) 烯酸酯、羥乙基(甲基)丙 烯酸酯、苯甲基(甲基)丙 基(甲基)丙烯酸酯、Ν·( )丙烯腈、(甲基)丙烯醯 胺、Ν ’ Ν-二甲基(甲基) 各含有比例係對於負型感光性 述增感劑含有〇.〇5〜20重量 物含有 10〜90重量%,前述 重量%,更理想爲前述增感劑 乙烯性不飽和化合物含有20〜 劑含有1〜30重量%。 成物(Ν !)除了前述增感劑、 前述光聚合引發劑以外,爲了 上之形成性及顯像性等,尙可 溶性樹脂例如有苯酚性含羥基 等,此負型感光性組成物(Ν ! 樹脂。 體例如有(甲基)丙烯酸、巴 馬來酸酐、衣康酸、檸康酸等 甲基苯乙烯、羥基苯乙烯、甲 (甲基)丙烯酸酯、丙基(甲 )丙烯酸酯、戊基(甲基)丙 酸酯、十二烷基(甲基)丙烯 丙烯酸酯、羥甲基(甲基)丙 烯酸酯、環氧丙基(甲基)丙 烯酸酯、Ν,N -二甲基胺基乙 甲基)丙烯醯基嗎啉、(甲基 胺、N -羥甲基(甲基)丙烯醯 丙烯醯胺、Ν,N-二甲基胺基 -53- (50) (50)1354864 乙基(甲基)丙烯醯胺、乙酸乙烯等其他乙烯化合物之共 聚物等。這些含羧基乙烯系樹脂較佳者爲酸値爲30至 250KOH. mg/g,更佳者爲 1〇〇 至 250KOH. mg/g。又,聚 苯乙烯換算之重量平均分子量爲10,000至200,000,更理 想爲 20,000 至]〇〇,〇〇〇。 其中,本發明之負型感光性組成物(N,)所含有之驗 可溶性樹脂’較佳者爲含有來自苯乙烯系單體、(甲基) 丙烯酸酯系單體及(甲基)丙烯酸之各單體之構成重覆單 位的共聚物。該共聚物含有來自苯乙烯系單體爲3至3〇 莫耳%,較佳爲5至2 5莫耳%、(甲基)丙烯酸酯系單體 1〇至80莫耳% ’較佳爲2〇至6〇莫耳%及(甲基)丙烯酸 1〇至60莫耳% ’較佳爲15至55莫耳%之各單體的構成重 覆位。 上述共聚物之苯乙烯單體的具體例有苯乙烯' α_甲基 本乙稀、α -乙基苯乙烯等α•取代烷基苯乙烯;鄰甲基苯乙 燃間甲基本乙烯、對甲基苯乙烯、2,5 -二甲基苯乙烯 4核取代烷基苯乙烯;鄰羥基苯乙烯、間羥基苯乙烯、對 羟基本乙烯、一羥基笨乙烯等核取代羥基苯乙烯;對氯苯 ^ 對漠本乙烧、二溴苯乙烯等核取代鹵化苯乙烯等。 又’丙稀酸醋系單體之具體例有甲基(甲基)丙烯酸酯、 基(甲基)丙稀酸酿、丙基(甲基)丙稀酸醋正丁基 基)丙烁酸醋丁基(甲基)丙嫌酸醋己基(甲 两场酸醋' 2_乙基己基(甲基)丙嫌酸醋、辛基(甲 基)丙烯酸酯等(甲_)丙烯酸之較佳爲碳數1至12,更 -54 - (51) (51)1354864 佳爲碳數1至8之烷酯及羥甲基(甲基)丙烯酸酯、羥乙 基(甲基)丙烯酸酯、環氧丙基(甲基)丙烯酸酯、苯甲 基(甲基)丙烯酸酯、胺乙基(甲基)丙烯酸酯、Ν,Ν· 一甲基胺基乙基(甲基)丙烯酸酯等取代烷基酯等。 ±述共聚物除了來自前述苯乙烯系單體、(甲基)丙 稀酸醋系單體及(甲基)丙烯酸之各單體之構成重覆單位 外’可含有來自例如巴豆酸、異巴豆酸、馬來酸、馬來酸 ST '衣康酸、檸康酸等不飽和羧酸或(甲基)丙烯腈、( 甲基)丙烯醯胺、Ν_羥甲基(甲基)丙烯醯胺、Ν,Ν-二 甲基(甲基)丙烯醯胺、Ν,Ν_二甲基胺基乙基(甲基) 丙嫌酿胺等(甲基)丙烯酸衍生物及乙酸乙烯、氯乙烯等 乙稀化合物等可共聚之其他單體的構成重覆單位,來自這 些其他單體之構成重覆單位含量較佳爲共聚物全體之1〇 莫耳%以下。 其他之含羧基乙烯系樹脂例如有在支鏈上具有乙烯性 不飽和鍵之含羧基乙烯系樹脂。該含羧基乙烯系樹脂之具 體例如’使含羧基聚合物與含羧基聚合物所具有之羧基之 5至90莫耳%,較佳爲30至70莫耳%之烯丙基縮水甘油 酸、縮水甘油基(甲基)丙烯酸酯、α—乙基縮水甘油基( 甲基)丙烯酸酯、縮水甘油基巴豆酸酯、縮水甘油基異巴 丑酸醋、巴丑醯基縮水甘油醚、衣康酸單院基單縮水甘油 醋、富馬酸單烷基單縮水甘油酯、馬來酸單烷基單縮水甘 油醋等脂肪族含環氧基不飽和化合物,或3,4·環氧環己 基甲基(甲基)丙燒酸醋' 2’ 3-環氧環戊基甲基(甲基 -55- (52) (52)1354864 )丙烯酸酯、7,8-環氧[三環[5.2.1.0]癸-2-基]氧甲基(甲 基)丙烯酸酯等脂環含環氧基不飽和化合物產生反應所得 之反應生成物’及使烯丙基(甲基)丙烯酸酯、3_烯丙基 氧基-2-羥丙基(甲基)丙烯酸酯、肉桂基(甲基)丙烯酸 酯、巴豆醯基(甲基)丙烯酸酯、甲基烯丙基(甲基)丙 烯酸酯、N ’ N-二烯丙基(甲基)丙烯醯胺等具2種以上 不飽和基之化合物,或乙烯基(甲基)丙烯酸酯、丨-氯乙 烯基(甲基)丙烯酸酯' 2-苯基乙烯基(甲基)丙烯酸酯 、1-丙烯基(甲基)丙烯酸酯、2-苯基巴豆酸酯、乙烯基 (甲基)烯丙醯胺等具2種以上不飽和基之化合物,與前 者具不飽和基之化合物全體之10至90莫耳%,較佳爲30 至80莫耳%的(甲基)丙烯酸等不飽和羧酸或不飽和羧酸 酯產生共聚所得之反應生成物等。 其他之含羧基乙烯系樹脂例如有多價羧酸或其酸酐附 加於環氧樹脂之α,β-不飽和單羧酸加成物之含不飽和基 及羧基之環氧樹脂。此含不飽和基及羧基之環氧樹脂之具 體例,例如在環氧樹脂之環氧基上開環附加α,β-不飽和 單羧酸之羧基所形成之經由酯鍵(-COO-)附加乙烯性不 飽和鍵,同時所生成之羥基與多元羧酸或其酸酐之羧基反 應所形成之經由酯鍵附加殘留之羧基者。 該環氧樹脂之具體例有雙酚Α環氧樹脂、雙酚F環氧 樹脂、雙酚S環氧樹脂、苯酚酚醛淸漆環氧樹脂、甲酚酚 醛淸漆環氧樹脂 '三酚環氧樹脂等,其中又以苯酚酚醛淸 漆環氧樹脂或甲酚酚醛淸漆環氧樹脂爲佳。該α,β-不飽 -56- (53) (53)1354864 和單羧酸之具體例有(甲基)丙烯酸、巴豆酸、馬來酸、 富馬酸、衣康酸、檸康酸等。其中較佳者爲(甲基)丙烯 酸。該多元羧酸或其酸酐之具體例有琥珀酸 '馬來酸、衣 康酸、苯二甲酸、四氫化苯二甲酸、甲基四氫化苯二甲酸 、端伸甲基四氫化苯二甲酸、甲基端伸甲基四氫化苯二甲 酸、六氫化苯二甲酸、甲基六氫化苯二甲酸及這些酸酐等 ,其中以馬來酸酐、四氫化苯二甲酸酐或六氫化苯二甲酸 酐爲佳,更理想爲四氫化苯二甲酸酐。 這些含不飽和基及羧基之環氧樹脂中,從感光性組成 物之感度、解像性及對基板之密著性等方面而言,環氧樹 脂較佳爲苯酚酚醛淸漆環氧樹脂或甲酚酚醛淸漆環氧樹脂 ’(X,β -不飽和羧酸爲(甲基)丙烯酸,而多元羧酸或其 酸酐理想爲四氫化苯二甲酸酐。又以酸値爲20至200mg .KOH/g、重量平均分子量爲2,000至200,000者爲佳。 本發明之負型藍紫色雷射感光性組成物中,負型感光 性組成物(N ,)所含有之前述鹼可溶性樹脂的比例係對於 負型感光性組成物(N,)之全量時,含有0〜80重量%, 吏佳爲10〜70重量%。 本發明之負型感光性組成物(N,)可尙含有聚合加速 劑’該聚合加速劑較佳爲含有胺基酸之酯或雙極離子化合 物。該胺基酸之酯或雙極離子化合物例如有下述一般式( Vila )或(Vllb )表示者》 -57- (54)1354864Rd : 2 o-ch2-ch—(ch2~o~q) (However, Q is -c-ch=ch2 -46 - (43) (43)1354864 Specific examples of the epoxy (meth) acrylate There is (meth)propionic acid' or the above hydroxy (meth) acrylate compound and (poly)ethylene glycol polyglycidyl ether, (poly) propylene glycol polyglycidyl ether, (poly) tetramethyl diol polyglycidyl Ether, (poly)pentamethylglycol polyglycidyl ether, (poly) neopentyl glycol polyglycidyl ether, (poly) hexamethylene glycol polyglycidyl acid, (poly) trimethylolpropane polyglycidyl ether, (poly) glycerol polyglycidyl ether ' (poly) sorbitol polyglycidyl ether and other aliphatic polyepoxy compounds, phenol novolac lacquer polyepoxides brominated phenol phenolic enamel lacquer polyepoxide, (oigh, Inter-, p-phenol phenolic enamel enamel polyepoxide, bisphenol A polyepoxy compound, bisphenol F polyepoxy compound and other aromatic polyepoxides, sorbitan polyglycidyl ether, triglycidyl Polyepoxy such as heterocyclic polyepoxide such as isocyanurate or triglycidyl tris(2-hydroxyethyl)isocyanuric acid In addition to the above, the other ethylenically unsaturated compound may be, for example, an ethyl methacrylate such as ethylene bis(meth) acrylamide or a propylene acrylate such as diallyl phthalate. A vinyl-containing compound such as an ester or a divinyl phthalate. The above ethylenically unsaturated compound may be used singly or in combination of two or more kinds. The ethylenically unsaturated compound is preferably an ester in the present invention. (Methyl) acrylates, (meth) propylene oxy oxyphosphates, or urethane (meth) acrylates, more preferably ester (meth) acrylates, the ester (A) More preferably, the acrylate group is a polyoxyalkylene group containing polyethylene glycol, polypropylene glycol or a polyethylene oxide adduct of bisphenol A, and contains two or more (meth) propylene oxides. In the present invention, the photopolymerization initiator constituting the negative photosensitive composition (Ν) is co-presented by the sensitizer or the like. When light is irradiated, the light of the sensitizer is excited to generate energy, and the active species are produced. An active compound which causes polymerization of the above ethylenically unsaturated compound, for example, a hexaarylbiimidazole compound, a titanocene compound, a halogenated hydrocarbon derivative, an iodine salt, an organic borate, etc. The sensitization of the composition, the adhesion to the substrate, the preservation stability, and the like are preferably a hexaarylbiimidazole compound, a titanocene compound, and an organic borate, and a safety lamp from a yellow lamp. In terms of the aspect, a particularly preferred one is a hexaarylbiimidazole compound. Specific examples of the hexaarylbiimidazole compound are 2,2,_bis(o-chlorophenyl)-4' 4'' 5 . 5'-tetraphenyl-bi-dimidine, 2,2,-bis(o-chlorophenyl)-4' 4',5,5,-tetra(p-methylphenyl)biimidazole, 2,2 Bis(o-chlorophenyl)-4,4,,5' 5,-tetrakis(p-methoxyphenyl)biimidazole, 2,2'-bis(o-,p-dichlorophenyl)_4,4, ,5,tetrakis(p-methoxyphenyl)biimidazole, 2,2,-bis(o-chlorophenyl)_4,4,,5 '5'-tetra(p-ethoxyphenyl) Mi, 2, 2, - double o-Chlorophenyl)·4,4′,5,5′-tetra(p-chlorophenyl)biimidazole, 2, 2,·bis(p-dichlorophenyl)bi-di-n-chlorophenyl)-4 , 4',5,5,-tetra (o-azole, 2,2,-bis(o-, p-dichlorophenyl)·4, 4, , 5,5,_tetra(o-, p-dichlorophenyl) Bis-imidazole, 2,2,_bis(o-chlorophenyl)_4,4,,^ ' 5'-tetra(p-fluorophenyl)biimidazole, 2,2,·bis(o-chlorophenyl)^ , 4',5,5'-tetra(o-,p-dibromophenyl)-diimidine, 2,2,_bis(o-bromophenyl)-4 ' 4, ' 5,5,_ four ( O-, p-dichlorophenyl)-dialdehyde-48-(45) (45)1354864 oxazole, 2,2'-bis(o-bromophenyl)-4,4,,5,5,-tetra(p-iodine Phenyl) diimidazole, 2, 2, bis(o-bromophenyl)_4,4,5,5,-tetrakis (o-chloro-p-methoxyphenyl)-biimidazole, 2,2,-double (o-chlorophenyl)-4, 4,, 5' 5'-tetra(p-chloronaphthyl)biimidazole and the like. Among them, a hexaphenylbiimidazole compound is preferred, and the ortho position of the benzene ring bonded to the 2,2,_ position on the imidazole ring is preferably substituted by a halogen atom, particularly 4' bonded to the imidazole ring. The benzene ring at the 4', 5, 5'-position is preferably unsubstituted or substituted by a halogen atom or an alkoxycarbonyl group. A conventional hexaaryl disaccharide-based compound which is a photopolymerization initiator of a photosensitive composition has a melting point of 丨9〇 〇c or more, for example, 丨96 to 2〇2. 〇 ′ and the X-ray refractive spectrum of the wavelength I54 A, the Bragg angle (2Θ±0.2.) 9 · 9 2 5 has the largest refractive peak. The hexadecandyl-melamine compound of the present invention preferably has a melting point of 180, from the viewpoints of solubility in a coating solvent and dispersion stability in a photosensitive composition. {: The following, more preferably, the Bragg angle (2θ ± 〇 2 , Λ ) 21.16 having the maximum refractive peak in the X-ray refractive spectrum of the wavelength of 1.54 A. The best hexaaryl^-melt compound is, for example, 2' 2,-bis(o-chlorophenyl)_4,4,5 tetraphenylbiimidazole, 2,2,·bis (o-, p-pair) Chlorophenyl)-4 4 5 , tetraphenyldiimidazole, 2,2,bis(o-bromophenyl)_4, 4 5 S'-tetraphenylbiimidazole, 2,2,-double (neighbor) , p-dichlorophenyl) 4 4 '5'5'-tetrakis(p-methoxyphenyl)biimidazole, etc., preferably by gastric sputum, is '2' 2' bis (o-chlorophenyl) )-4, 4,,5, 5,_tetraphenylbiimidazole, q 2,2, bis(o-, p-dichlorophenyl)·4, 4,5,5,tetra(p-methoxy) Phenyl) diimidazole. -49- (46) (46) 1354864 Specific examples of the above titanocene-based compound include dicyclopentadienyl titanium dichloride, dipentadienyl titanium biphenyl, and dicyclopentadienyl titanium bis (2, 4-difluorophenyl), dicyclopentadienyl titanium bis(2,6-difluorophenyl), dicyclopentadienyl titanium bis(2,4,6-trifluorophenyl), bicyclo Pentadienyl titanium bis(2,3,5,6-tetrafluorophenyl), dicyclopentadienyl titanium bis(2,3,4,5,6-pentafluorophenyl), di(methyl) Cyclopentadienyl)titanium bis(2,6-difluorophenyl), bis(methylcyclopentadienyl)titanium bis(2,3,4,5,6-pentafluorophenyl), bicyclo Pentadienyl titanium bis[2,6-difluoro-3-(1-indolyl)phenyl] and the like. Further, it is preferred that the titanium compound having a dicyclopentadienyl structure and a biphenyl structure is substituted by a halogen atom at the ortho position of the biphenyl ring. The halogenated hydrocarbon derivative such as a halogenated alkane 'halomethyl group S-triazine derivatives and halomethylation] 3,4-oxadiazole derivatives, etc., specific examples of the halogenated alkane are dichloromethane, chloroform, 1,2-dichloroethane, 1,2-dibromoethane, and the like. Specific examples of the halomethylated s-triazine derivative are, for example, 2,4,6-tris(monochloromethyl)-s-triazine, 2' 4,6-tris(dichloromethyl)-s_ Sansui, 2,4,6-tris(trichloromethyl)-s-diazine, 2-methyl-4,6-bis(trichloromethyl)-s-tris-Q,2-n-propyl -4,6·bis(dichloromethyl)_s_triazine' 2_(α,α,β-trichloroethyl)-4,6·bis(trichloromethyl)_s_trisole, 2_phenyl -4,6-bis(trichloromethyl)-s-triazine' 2·(p-methoxyphenyl)_ 4' 6-bis(trichloromethyl)-s-triazine, 2-(3 ,4-epoxyphenyl)-4,6-bis(trichloromethyl)-s-triazine, 2·(p-chlorophenyl)6·bis(trichloromethyl)-s-triazine '2 - [1-(p-methoxyphenyl)_2,4·butadiene•50-(47) (47)1354864 base]-4,6-bis(trichloromethyl)-s-triazine, 2 -styryl-4,6-bis(trichloromethyl)-s-triazine, 2-(p-methoxystyryl)-4,6-bis(trichloromethyl)triazine, 2- (p-methoxy-m-hydroxystyryl)-4,6-bis(trichloromethyl)-s-triazine, 2-(p-isopropoxy styryl)-4,6-bis ( Trichloromethyl)-s-triazine ' 2-(p-tolyl) -4,6-bis(trichloromethyl)-s-triazine, 2-(p-methoxynaphthyl)-4,6-bis(trichloromethyl)-s-triazine, 2-(pair Ethoxynaphthyl)-4,6-bis(trichloromethyl)-s-triazine, 2-(p-ethoxycarbonylnaphthyl)-4,6-bis(trichloromethyl)-s- Triazine, 2-phenylthio-4,6-bis(trichloromethyl)-s-triazine, 2-benzylsulfonyl-4,6-bis(trichloromethyl)-s-triazine, 2,4,6-tris(dibromomethyl)-s-triazine, 2,4,6-tris(tribromomethyl)-s-triazine, 2-methyl-4,6-bis (three Bromomethyl)-s-triazine, 2,methoxy-4,6-bis(tribromomethyl)-s-triazine, and the like. Among them, bis(trihalomethyl)-s-triazine is preferred, 2-methyl-4,6-bis(trichloromethyl)-s-triazine, 2-phenyl-4,6-bis ( Trichloromethyl)-s-triazine, 2-(p-methoxyphenyl)-4,6-bis(trichloromethyl)-s-triazine, 2-(3,4-epoxyphenyl -4,6-bis(trichloromethyl)-s-triazine, 2-[1-(p-methoxyphenyl)-2,4-butadienyl]-4,6-bis (three) Chloromethyl)-s-triazine' 2-(p-methoxystyryl)-4,6-bis(trichloromethyl)-s-triazine, 2-(p-methoxy-m-hydroxybenzene Vinyl)-4,6-bis(trichloromethyl)-s-triazine, 2-(p-isopropoxystyryl)-4,6-bis(trichloromethyl)-s-triazine Better. Specific examples of the halomethylated 1,3,4-oxadiazole derivative are 2-(p-methoxyphenyl)-5-trichloromethyl-1,3,4-oxadiazole, 2-( P-methoxystyryl)-5-trichloromethyl-1,3,4-oxadiazole, 2-(o-benzofuran-51-(48) 1354864 yl)-5-trichloromethyl -1,3,4-oxadiazole, 2-[β-(o-phenylpyranyl)vinyl]-5-trichloromethyl-], 3,4-oxadiazole and the like. Further, the iodonium salt is, for example, a diphenyl iodine hexafluoroarsenate, a diiodo mirror tetrafluoroborate, a diphenyl iodine p-toluenesulfonate or a diphenylsulfonium sulfonate. Key salt, dicyclohexyl iodide hexafluoroarsenate cyclohexyl iodide tetrafluoroborate, dicyclohexyl iodide p-toluenesulfonate cyclohexyl iodide sulfonate, etc. Among them, a diaryl iodine salt is preferred. Organoborates such as organoboron ammonium complexes, organoboron miscible organoboron oxime complexes, organoboron hydroxy hydrazine complexes, organoboron iodine guns, organoboron transition metal coordination complexes, and the like. The organoboron anion is n-butyltriphenylboron anion, n-butyltris(2,4,6-trimethyl)boron anion, n-butyltris(p-methoxyphenyl)boranium anion butyl tri P-fluorophenyl)boron anion, n-butyltris(m-fluorophenyl anion, n-butyltris(3-fluoro-4-methylphenyl)boron anion, n-tris(2,6-difluorophenyl)boron Anionic 'n-butyl tris(2,4,6-phenyl)boron anion, n-butyl tris(2,3,4,5,6-pentafluorophenylboron anion, n-butyl tris(p-chlorophenyl) An alkyltriphenylboron such as a boron anion, n-butyl 2,6-difluoro-3.pyrrolylphenyl)boron anion, and a cation such as a saddle cation '铙 cation, a mirror cation iodine gun cation, etc. The compound, which is preferably an ammonium cation such as a tetraalkylammonium or the like. The negative blue-violet laser photosensitive composition of the present invention constitutes the sensitizer of the photosensitive composition (Ν,), and the ethylenicity is not Sodium hydride is a substance, misfit such as phenyl, n-borobutyl trifluoro) III (anion, organic negative and -52- (49) 13 When the total amount of the composition of the photopolymerization initiator is 54864, the former %, the ethylenically unsaturated photopolymerization initiator contains 0.5 to 50, 0.1 to 10% by weight, and 70% by weight of the light. The polymerization initiation of the negative photosensitive group of the present invention, the ethylenically unsaturated compound and the photosensitive composition layer are preferably an alkali-soluble resin in the substrate, and the alkali-soluble resin and the carboxyl group-containing styrene resin are preferably carboxyl group-containing styrene. a carboxyl group-containing styrene resin having stolic acid, isocrotonic acid, maleic acid, an unsaturated carboxylic acid, and styrene, α-based (meth) acrylate, ethyl acrylate, butyl (methyl) Ethyl ester, hexyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, hydroxyethyl (meth) acrylate, benzyl (methyl) propyl (meth) acrylate Ν·( ) acrylonitrile, (meth) acrylamide, Ν ' Ν-dimethyl (methyl) content ratios for negative photosensitive sensitizers containing 〇. 〇 5~20 weights 10 to 90% by weight, the aforementioned weight %, more ideal In addition to the sensitizer and the photopolymerization initiator, the sensitizer ethylenically unsaturated compound is contained in an amount of from 1 to 30% by weight, in addition to the sensitizer and the photopolymerization initiator. The hydrazine-soluble resin has, for example, a phenolic hydroxyl group-containing, such a negative photosensitive composition (such as a resin such as (meth)acrylic acid, palmitic anhydride, itaconic acid, citraconic acid, etc. , hydroxystyrene, methyl (meth) acrylate, propyl (meth) acrylate, pentyl (methyl) propionate, dodecyl (meth) propylene acrylate, hydroxymethyl (methyl) Acrylate, epoxypropyl (meth) acrylate, hydrazine, N-dimethylaminoethylmethyl propylene hydrazinomorph, (methylamine, N-hydroxymethyl (meth) propylene propylene Amidoxime, anthracene, N-dimethylamino-53-(50) (50) 1354864 A copolymer of other vinyl compounds such as ethyl (meth) acrylamide or vinyl acetate. The carboxyl group-containing vinyl resin is preferably from 30 to 250 KOH.g/g, more preferably from 1 Torr to 250 KOH. mg/g. Further, the polystyrene-converted weight average molecular weight is 10,000 to 200,000, more preferably 20,000 to 〇〇, 〇〇〇. Among them, the soluble resin contained in the negative photosensitive composition (N,) of the present invention preferably contains a styrene monomer, a (meth) acrylate monomer, and a (meth) acrylic acid. The composition of each monomer is a unit of repeating copolymer. The copolymer contains 3 to 3 mol%, preferably 5 to 25 mol%, and (meth)acrylate monomer 1 to 80 mol% from the styrene monomer. 2 〇 to 6 〇 mol % and (meth)acrylic acid 1 〇 to 60 mol % 'preferably 15 to 55 mol % of each monomer constitutes a repetitive position. Specific examples of the styrene monomer of the above copolymer include α-substituted alkylstyrene such as styrene 'α-methylbenzidine and α-ethylstyrene; o-methylphenylacetone-methyl-ethylene and para-methyl Styrene, 2,5-dimethylstyrene 4-nuclear substituted alkylstyrene; o-hydroxystyrene, m-hydroxystyrene, p-hydroxy-p-ethylene, monohydroxy-p-ethylene, etc. ^ Substituting halogenated styrene with nuclear such as Mobibi and dibromostyrene. Further, specific examples of the 'acrylic acid vinegar monomer are methyl (meth) acrylate, benzyl (meth) acrylate, propyl (meth) acrylate butyl butyl acrylate) Acetate butyl (methyl) propyl succinic acid ketone (A two-field acid vinegar '2-ethylhexyl (methyl) propylene vinegar, octyl (meth) acrylate, etc. (A) acrylic acid is preferred It is a carbon number of 1 to 12, more -54 - (51) (51) 1354864. It is preferably an alkyl ester having 1 to 8 carbon atoms and a methylol (meth) acrylate, a hydroxyethyl (meth) acrylate, or a ring. Substituted alkane such as oxypropyl (meth) acrylate, benzyl (meth) acrylate, amine ethyl (meth) acrylate, hydrazine, hydrazine monomethylaminoethyl (meth) acrylate a base ester or the like. The copolymer of the above-mentioned styrene-based monomer, (meth)acrylic acid-based monomer, and (meth)acrylic acid may be contained in a repeating unit. Unsaturated carboxylic acid such as acid, isocrotonic acid, maleic acid, maleic acid ST 'itaconic acid, citraconic acid or (meth)acrylonitrile, (meth)acrylamide, hydrazine-hydroxymethyl group base (meth)acrylic acid derivatives such as acrylamide, hydrazine, hydrazine-dimethyl(meth) acrylamide, hydrazine, hydrazine-dimethylaminoethyl (meth) propyl amide, and vinyl acetate, A repeating unit of another monomer copolymerizable with an ethylene compound such as vinyl chloride, and the content of the repeating unit derived from these other monomers is preferably 1% by mole or less based on the total amount of the copolymer. The resin is, for example, a carboxyl group-containing vinyl resin having an ethylenically unsaturated bond in a branched chain. The carboxyl group-containing vinyl resin is specifically, for example, '5 to 90 moles of a carboxyl group of a carboxyl group-containing polymer and a carboxyl group-containing polymer. %, preferably 30 to 70 mol% of allyl glycidic acid, glycidyl (meth) acrylate, α-ethyl glycidyl (meth) acrylate, glycidyl crotonate, Glycidyl isobar ugly vinegar, ugly thioglycidyl ether, itaconic acid single hospital based monoglycidyl vinegar, fumaric acid monoalkyl monoglycidyl ester, maleic acid monoalkyl monoglycid vinegar, etc. Aliphatic epoxy-containing unsaturated compounds, or 3 ,4·epoxycyclohexylmethyl(methyl)propoxylate vinegar '2' 3-epoxycyclopentylmethyl (methyl-55-(52) (52)1354864) acrylate, 7,8- Epoxy [tricyclo[5.2.1.0]non-2-yl]oxymethyl (meth) acrylate and other alicyclic epoxy-containing unsaturated compounds produce a reaction product obtained by the reaction' and an allyl group (A) Acrylate, 3-allyloxy-2-hydroxypropyl (meth) acrylate, cinnamyl (meth) acrylate, crotonyl (meth) acrylate, methallyl ( a compound having two or more kinds of unsaturated groups such as methyl acrylate or N ' N-diallyl (meth) acrylamide, or a vinyl (meth) acrylate or a fluorene-chlorovinyl group (methyl) ) acrylate '2-phenylvinyl (meth) acrylate, 1-propenyl (meth) acrylate, 2-phenyl crotonate, vinyl (meth) allylimine, etc. The compound of the above unsaturated group, 10 to 90 mol%, preferably 30 to 80 mol% of the unsaturated carboxylic acid or unsaturated carboxylic acid such as (meth)acrylic acid, of the entire compound having an unsaturated group. The resulting ester to produce a reaction product of the copolymerization. The other carboxyl group-containing vinyl resin is, for example, an epoxy resin containing an unsaturated group and a carboxyl group, which is a polyvalent carboxylic acid or an acid anhydride thereof, which is added to an α,β-unsaturated monocarboxylic acid adduct of an epoxy resin. Specific examples of the epoxy group containing an unsaturated group and a carboxyl group, for example, ring-opening on the epoxy group of the epoxy resin, and addition of a carboxyl group of the α,β-unsaturated monocarboxylic acid to form an ester bond (-COO-) A group in which an ethylenically unsaturated bond is added and a hydroxyl group formed is reacted with a carboxyl group of a polyvalent carboxylic acid or an anhydride thereof to form a residual carboxyl group via an ester bond. Specific examples of the epoxy resin include bisphenol oxime epoxy resin, bisphenol F epoxy resin, bisphenol S epoxy resin, phenol novolac lacquer epoxy resin, cresol novolac lacquer epoxy resin trisphenol epoxy Resin, etc., in which phenol novolac lacquer epoxy resin or cresol novolac lacquer epoxy resin is preferred. Specific examples of the α,β-unsaturated-56-(53)(53)1354864 and the monocarboxylic acid include (meth)acrylic acid, crotonic acid, maleic acid, fumaric acid, itaconic acid, citraconic acid, and the like. . Of these, preferred is (meth)acrylic acid. Specific examples of the polycarboxylic acid or its anhydride include succinic acid 'maleic acid, itaconic acid, phthalic acid, tetrahydrophthalic acid, methyltetrahydrophthalic acid, and terminal methyltetrahydrophthalic acid. Methyl end extension methyltetrahydrophthalic acid, hexahydrophthalic acid, methyl hexahydrophthalic acid and these anhydrides, among which maleic anhydride, tetrahydrophthalic anhydride or hexahydrophthalic anhydride Preferably, it is more preferably tetrahydrophthalic anhydride. Among these epoxy resins containing an unsaturated group and a carboxyl group, the epoxy resin is preferably a phenol novolac lacquer epoxy resin or the like from the viewpoints of sensitivity, resolution, and adhesion to a substrate of the photosensitive composition. Cresol novolac lacquer epoxy resin '(X,β-unsaturated carboxylic acid is (meth)acrylic acid, and polybasic carboxylic acid or its anhydride is desirably tetrahydro phthalic anhydride. The acid bismuth is 20 to 200 mg. The KOH/g and the weight average molecular weight are preferably 2,000 to 200,000. In the negative blue-violet laser photosensitive composition of the present invention, the ratio of the alkali-soluble resin contained in the negative photosensitive composition (N) is The total amount of the negative photosensitive composition (N,) is 0 to 80% by weight, preferably 10 to 70% by weight. The negative photosensitive composition (N,) of the present invention may contain a polymerization accelerator. The polymerization accelerator preferably contains an amino acid ester or a bipolar ion compound. The amino acid ester or bipolar ion compound has, for example, the following general formula (Vila) or (Vllb): -57- ( 54) 1354486

O II R14 R1( (Vila) N——c- (CH2 ) p -C-O-R1 LI.,O II R14 R1( (Vila) N——c- (CH2 ) p -C-O-R1 LI.,

R R14 R1 19-iV - C- (CH2 ) 〇II -C-O' (vilb) 〔式(Vila)及(Vllb)中,R14及R15係分別獨立可 具有取代基之烷基,可具有取代基之芳基,可具有·取代基 之雜環基或氫原子,R16及R17係分別獨立可具有取代基 之烷基或氫原子,R18係可具有取代基之烷基,可具有取 代基之烯基或可具有取代基之芳基,或可具有取代基之雜 環基,P爲0〜10之整數〕。 式(Vila )及(Vllb )中之 R14、R15、RU、Ri7、Ris 及R19之烷基較佳爲碳數1至8,更佳爲碳數丨至4。r】* 之烯基例如有乙烯基、烯丙基、異丙烯基等,Rm、 R18及R19之芳基例如有苯基、萘基等,r14、及rM之 雜環基例如有呋喃基、吡咯基、吡啶基等。 這些烷基及烯基之取代基例如有烷氧基、烷氧羰基、 烯氧基、烯氧羰基、苯基、鹵原子等,這些芳基、雜環基 之取代基例如有可具有烷氧基或苯基等取代基之烷基、烷 氧基、烯基、燃氧基、醯基、醯氧基、院氧羯基、苯氧基 、烷硫基、烷基磺醯基及醛基、羧基、羥基、磺基、硝基 、氰基、鹵原子等。 本發明中’以上前述一般式(Vila)或(Vllb)表示 -58 - (55) (55)1354864 之胺基酸之酯或雙極離子化合物中,式(Vila)中之Rm 及Rh其中之一爲氫原子,另一爲可具有取代基之苯基, R16及R17爲氫原子,R18爲可具有取代基之烷基,或可具 有取代基之苯基,P爲0、1或2之胺基酸酯,或式(VIIb )中之R14及R15爲氫原子,或其一爲可具有取代基之烷 基,Rh及R17爲氫原子,R19爲可具有取代基之烷基,或 可具有取代基之苯基,p爲0、1或2之胺基酸雙極離子化 合物。前述一般式(Vila)中,p爲0,R14及R15其中之 —爲氫原子,另一爲苯基,R16及R17爲氫原子之N-苯基 甘胺酸之酯,R18爲苯甲基之N-苯基甘胺酸苯甲酯或前述 —般式(VIIb)中,p 爲 〇,R14、R15、R16 及 R1?其中之 —爲氫原子’R19爲苯基之N-苯基甘胺酸之雙極離子化合 物。 聚合加速劑例如有胺化合物,該胺化合物可爲脂肪族 、脂環或芳香族胺,且不限定爲單胺,可爲二胺、三胺等 聚胺,也可爲第一胺、第二胺或第三胺,但以pKb爲7以 下者爲佳。該胺化合物之具體例有丁胺、二丁胺、三丁胺 '戊肢、—戊妝、二戊胺、己胺、二己胺、三己胺、烧丙 胺、二烯丙胺、三烯丙胺、三乙醇胺、苯甲胺、二苯甲胺 '三苯甲胺等可被羥基或苯基取代之脂肪族胺。其中本發 明中,特別理想者爲三苯甲胺。 聚合加速劑例如有2 -巯基苯并噻唑、2 -锍基苯并咪唑 ' 2 -巯基苯并噁唑、3 _毓基_丨,2,4 ·三唑、2 _锍基_ 4 ( 3 η )-D奎哩啉、β-锍基萘、乙二醇二硫丙酸酯、三羥甲基丙烷 -59- (56) (56)1354864 三硫丙酸酯、季戊四醇四硫丙酸酯等含锍基化合物類;己 烷二噻茂、三羥甲基丙烷三锍基乙酸酯、季戊四醇四毓基 丙酸酯等多官能噻茂化合物類;N,N-二烷基胺基苯甲酸 酯、N-苯基甘胺酸或其銨及鈉鹽等之鹽之衍生物、苯基丙 胺酸或其銨及鈉鹽等之鹽、酯等之衍生物等具芳香環之胺 基酸或其衍生物等。本發明係以含毓基化合物類及N-苯 基甘胺酸或其銨及鈉鹽等之鹽之衍生物爲佳。 本發明之藍紫色雷射感光性組成物中,負型感光性組 成物(N!)所含有之聚合加速劑之比例係對於負型感光性 組成物(N,)之全量時,含有30重量%以下,更佳爲20 重量%以下。 本發明之負型感光性組成物(N i )爲了提升對基板之 形成感光性組成物層時之塗佈性及感光性光阻劑層之顯像 性等,可含有非離子性、陰離子性、陽離子性、兩性及氟 系等之表面活性劑,具體而言,例如該非離子性界面活性 劑例如有聚環氧乙烷烷醚類、聚環氧乙烷聚環氧丙烷烷醚 類、聚環氧乙烷烷基苯基醚類、聚環氧乙烷烷基酯類、聚 環氧乙烷脂肪酸酯類、甘油脂肪酸酯類、聚環氧乙烷甘油 脂肪酸酯類、季戊四醇脂肪酸酯類、聚環氧乙烷季戊四醇 脂肪酸酯類、山梨糖醇酐脂肪酸酯類、聚環氧乙烷山梨糖 醇酐脂肪酸酯類、山梨糖醇脂肪酸酯類、聚環氧乙烷山梨 糖醇脂肪酸酯類等,陰離子性表面活性劑例如有烷基磺酸 鹽類、烷基苯磺酸鹽類、烷基萘磺酸鹽類、聚環氧乙烷烷 基醚磺酸鹽類、烷基硫酸鹽類、烷基硫酸酯鹽類、高級醇 -60- (57) 1354864 硫酸酯類、脂肪族醇硫酸酯鹽類 '聚環氧乙烷烷基醚 鹽類 '聚環氧乙烷烷基苯基醚硫酸鹽類、烷基磷酸酯 '聚環氧乙烷烷基醚磷酸鹽類、聚環氧乙烷烷基苯基 酸鹽類等’陽離子性界面活性劑例如有四級銨鹽類、 啉衍生物類、胺鹽類等,兩性界面活性劑例如有甜菜 化合物類、咪唑鏡鹽類、咪唑啉類、胺基酸類等。 本發明之藍紫色雷射感光性組成物中,負型感光 成物(N ,)所含有之前述界面活性劑之比例係對於負 光性組成物(Nd之全量時,含有1〇重量%以下, 爲5重量%以下。 本發明之負型感光性組成物(N,)可含有對於負 光性組成物(N ,)之全量時,含有2重量%以下之例 ’ 6-二第三丁基苯酚、2,6-二第三丁基對甲酚、2,4 三第三丁基苯酚、4,4’-甲撐雙(2,6-二第三丁基苯 等之抗氧化劑,可含有20重量%以下之由有機或無 顏料所構成之著色劑,可含有40重量%以下之二辛 二甲酸酯、二十二烷基苯二甲酸酯、三甲苯酚磷酸酯 可塑劑,可含有30重量%以下之色素前驅物。 本發明之藍紫色雷射感光性組成物中,其負型感 組成物例如可含有前述增感劑,以鹼可溶性樹脂、該 之交聯劑及光酸產生劑爲基本組成之負型感光性組成 N2 )。 <負型感光性組成物(N2) > 硫酸 鹽類 醚磷 咪唑 鹼型 性組 型感 更佳 型感 如2 ,6 -酚) 機染 基苯 等之 光性 樹脂 物( -61 - (58) (58)1354864 本發明中,構成負型感光性組成物(N 2 )之鹼可溶性 樹脂係在感光性組成物接受活性光線照射時,藉由前述增 感劑之作用使光酸產劑產生酸,利用該酸以後述之交聯劑 形成交聯結構的樹脂,此鹼可溶性樹脂例如含苯酚性經基 樹脂及含殘基之乙稀系樹脂等。此負型感光性組成物(N2 )中’例如聚乙烯基苯酚樹脂及酚醛樹脂、甲階酚醛樹脂 等苯酚樹脂及具有苯酚性羥基之丙烯酸衍生物之共聚物樹 脂、具有苯酚性羥基之聚乙烯基縮醛樹脂等之含苯酚性羥 基樹脂。其中較佳者爲聚乙烯基苯酚樹脂及酚醛樹脂、甲 階酚醛樹脂等苯酚樹脂,特別理想爲聚乙烯基苯酚樹脂及 酚醛樹脂。 聚乙烯基苯酚樹脂例如有鄰羥基(α·甲基)苯乙烯〔 「(α-甲基)苯乙烯」係指「苯乙烯」或/及ra_甲基苯乙 烯」’以下相同〕、間羥基(a-甲基)苯乙烯、對羥基( α-甲基)苯乙烯、二羥基(α-甲基)苯乙烯、三羥基(α_ 甲基)苯乙烯、四羥基(α -甲基)苯乙烯、五羥基(α—甲 基)苯乙烯等羥基(α-甲基)苯乙烯類之單獨或兩種以上 或(α -甲基)苯乙烯、具有烷氧基 '醯基、醯氧基、丙烯 氧基、芳氧基、鹵原子等羥基以外之取代基之(α_甲基) 苯乙稀、(甲基)丙烯酸、(甲基)丙烯酸酯、馬來酸、 馬來酸醯亞胺等其他乙燦系化合物,在自由基聚合引發劑 或陽離子聚合引發劑之存在下,進行聚合或共聚,或將這 些經基甲基)苯乙烯類之羥基保護之苯乙烯衍生物類 產生聚合或共聚後,然後使保護基脫離者。 -62- (59) (59)1354864 該酚醛樹脂例如使苯酚、鄰甲酚、間甲酚、對甲酹、 2,5-二甲苯酚、3,5-二甲苯酚、鄰乙基苯酚、間乙基苯 酣、對乙基苯酿、丙基苯酣、正丁基苯酣、第三丁基苯酚 、1-萘酣、2 -蔡酣、4’ 4:-聯苯二醇、雙酣 a、焦兒茶酿 、間苯二酸、對苯二酚、焦掊酚、1,2,4 -苯三醇、氟山 梨酸等苯酌類中至少一種在酸觸媒下,與例如甲醒、對甲 醛、乙醛、對乙醛、丙醛、苯甲醛、糖醛等醛類或丙嗣、 甲基乙基酮、甲基異丁基酮等酮類之至少一種進行聚縮合 者,又該甲階酚醛樹脂例如使用鹼觸媒取代酸觸媒以外, 同樣進行聚縮合者。 這些含苯酚性羥基樹脂之重量平均分子量爲丨乃⑽至 5 〇,0 0 0。 負型感光性組成物(N2 )中,交聯劑係感光性組成物 接受活性光線照射時,使前述鹼可溶性樹脂.形成交聯構造 者’該交聯劑其代表性例如有至少具有2個官能基:羥甲 基、使其醇縮合改性的烷氧基甲基或乙醯氧基甲基等之胺 基化合物等。具體而言’例如有三聚氰胺與甲醛聚縮合之 三聚氰胺樹脂'苯并鳥糞胺與甲醛聚縮合之苯并鳥糞胺樹 脂、甘脲與甲醛聚縮合之甘脲樹脂、尿素與甲醛聚縮合之 尿素樹脂、三聚氰胺、苯并鳥糞胺、甘脲或尿素等2種以 t與甲ϋ共聚縮合之樹脂及這些樹脂之羥甲基經醇縮合改 性的改性樹脂等。這些例如有以三井Scitech公司之「 Syme]」、三和ChemicaI公司之「Nikalac」之商標名所販 售者。 -63- (60) 1354864 交聯劑也有含環氧基化合物,該含環氧基化合 有構成所謂環氧樹脂之重覆單位之聚羥基化合物與 丙烷反應所得之聚縮水甘油醚化合物、聚羧酸化合 氧氯丙烷反應所得之聚縮水甘油酯化合物及聚胺化 環氧氯丙烷反應所得之聚縮水甘油胺化合物等,由 量物至高分子量物的化合物。 這些聚縮水甘油醚化合物之具體例有聚乙二醇 水甘油醚型環氧、雙(4-羥苯基)之二縮水甘油醚 '雙(3,5 -二甲基-4-經苯基)之二縮水甘油醚型 雙酚F之二縮水甘油醚型環氧、雙酚A之二縮水甘 環氧、四甲基雙酚A之二縮水甘油醚型環氧、附加 烷之雙酚A的二縮水甘油醚型環氧、苯酚酚醛淸漆 等。這些聚縮水甘油醚化合物中可導入殘存之羥基 或2價氧化合物反應所得之羧基。聚縮水甘油酯化 具體例有六氫化苯二甲酸之二縮水甘油酯型環氧、 酸之二縮水甘油酯型環氧等,而聚縮水甘油胺化合 體例有雙(4·胺基苯基)甲烷之二縮水甘油胺型環 聚異氰酸之三縮水甘油胺型環氧等。 本發明中,構成負型感光性組成物(N 2 )之光 劑係感光性組成物接受活性光線照射時,因前述增 作用產生活性種之酸的活性化合物,此光酸產生劑 鹵取代鏈烷、鹵甲基化S-三嗪衍生物等含鹵素化合 鑰鹽類及碩化合物類等,其中較佳者爲產生磺酸之 物類。 物例如 環氧氯 物與環 合物與 低分子 之二縮 型環氧 環氧、 油醚型 環氧乙 型環氧 與酸酐 合物之 苯二甲 物之具 氧、二 酸產生 感劑之 例如有 物類、 碾化合 -64 - (61) (61)1354864 該含鹵素化合物類之鹵素取代鏈烷及齒甲基化S-三D秦 衍生物例如有前述負型感光性組成物(N,)之光聚合引發 劑所列舉者相同。 該鎗鹽例如有四甲基銨溴化物、四乙基銨溴化物等銨 鹽;二苯基碘鎰六氟砷酸鹽、二苯基碘鎗四氟硼酸鹽、二 苯基碘鎗對甲苯磺酸鹽、二苯基碘鎗莰磺酸鹽、二環己基 碘鎗六氟砷酸鹽、二環己基碘鐵四氟硼酸鹽、二環己基碘 鎰對甲苯磺酸鹽、二環己基碘鎗莰磺酸鹽等碘鎗鹽;三苯 基銃六氟砷酸鹽、三苯基銃四氟硼酸鹽、三苯基銃對甲苯 磺酸鹽、三苯基锍莰磺酸鹽、三環己基銃六氟砷酸鹽、三 環己基銃四氟硼酸鹽、三環己基鏑對甲苯磺酸鹽、三環己 基鏑莰磺酸鹽等锍鹽等。 該碩化合物類具體例如有雙(苯基磺醯基)甲烷、雙 (對羥基苯基磺醯基)甲烷、雙(對甲氧基苯基磺醯基) 甲烷、雙(α-萘基磺醯基)甲烷、雙(β-萘基磺醯基)甲 烷、雙(環己基磺醯基)甲烷、雙(第三丁基磺醯基)甲 烷、苯基磺醯基(環己基磺醯基)甲烷等雙(磺醯基)甲 烷化合物;苯基羰基(苯基磺醯基)甲烷、萘基羰基(苯 基磺醯基)甲烷、苯基羰基(萘基磺醯基)甲烷' 環己基 羰基(苯基磺醯基)甲烷、第三丁基羰基(苯基磺醯基) 甲烷、苯基羰基(環己基磺醯基)甲烷、苯基羰基(第三 丁基羰基)甲烷等羰基(磺醯基)甲烷化合物;雙(苯基 磺醯基)重氮甲烷、雙(對羥基苯基磺醯基)重氮甲烷、 雙(對甲氧基苯基磺醯基)重氮甲烷、雙(α-萘基磺醯基 -65- (62) (62)1354864 )重氮甲烷、雙(β·萘基磺醯基)重氮甲烷、雙(環己基 磺醯基)重氮甲烷、雙(第三丁基磺醯基)重氮甲烷、苯 基磺醯基(環己基磺醯基)重氮甲烷、雙(磺醯基)重氮 甲烷化合物;苯基羰基(苯基磺醯基)重氮甲烷、萘基羰 基(苯基磺醯基)重氮甲烷、苯基羰基(萘基磺醯基)重 氮甲烷、環己基羰基(苯基磺醯基)重氮甲烷、第三丁基 羰基(苯基磺醯基)重氮甲烷、苯基羰基(環己基磺醯基 )重氮甲烷、苯基羰基(第三丁基羰基)重氮甲烷等羰基 (磺醯基)重氮甲烷化合物等。 本發明之負型藍紫色雷射感光性組成物中,構成負型 感光性組成物(N2)之前述增感劑、前述鹼可溶性樹脂、 前述交聯劑及前述光酸產生劑之各含有比例係對於前述鹼 可溶性樹脂100質量份時,前述增感劑含有0.1〜30重量 %,前述交聯劑含有1〜80重量%,前述光酸產生劑含有 0.00 1〜30重量%,更理想爲前述增感劑含有0.5〜20重 量%,前述交聯劑含有5〜60重量%及前述光酸產生劑含 有0.005〜10重量%。 本發明之藍紫色雷射感光性組成物中,負型感光性組 成物例如有含有前述增感劑,以含酸交聯性基樹脂及光酸 產生劑爲基本組成之負型感光性組成物(N3)。 <負型感光性組成物(N 3 ) > 本發明中,構成負型感光性組成物(N3)之含酸交聯 性基樹脂係在感光性組成物接受活性光線照射時,藉由前 -66- (63) (63)1354864 述光酸產劑之利用形成交聯結構的樹脂。該酸交聯性基例 如有羥甲基、烷氧基甲基、乙烯基醚基及環氧基等。含有 這些酸交聯性基之含酸交聯性基樹脂只要是分子內含有2 個以上這些酸交聯性基之樹脂時,即無特限制,具體而言 例如有前述負型感光性組成物(N 2 )中所列舉之驗可溶性 樹脂之酚醛樹脂、甲階酚醛樹脂等苯酚樹脂及聚乙烯基苯 酚樹脂等含苯酚性羥基之樹脂之苯酚性羥基之至少一部分 進行醚化或酯化’導入前述酸交聯性基之樹脂及前述負型 感光性組成物(N j )所列舉之鹼可溶性樹脂之含羧基之乙 烯系樹脂之羧基之至少一部分進行酯化,導入前述酸交聯 性基之樹脂或將前述具有酸交聯性基之乙烯基系單體進行 聚合或共聚,導入前述酸交聯性基之樹脂等。其中較佳者 爲酚醛樹脂或以聚乙烯基苯酚樹脂爲基礎者,特別理想爲 以酚醛樹脂爲基礎者。含酸交聯性基之樹脂係指包含導入 酸交聯性基之樹脂及未導入酸交聯性基之樹脂。 本發明中,構成負型感光性組成物(N3 )之光酸產生 劑,例如有前述負型感光性組成物(N2 )所列舉之光酸產 生劑相同者。 本發明之藍紫色雷射感光性組成物中,構成負型感光 性組成物(n3 )之前述增感劑、前述含酸交聯性基之樹脂 及光酸產生劑之各含有比例係對於前述含酸交聯性基之樹 脂100質量份時,前述增感劑含有0.1〜30重量%及前述 光酸產生劑含有0.001〜30重量%,更理想爲前述增感劑 含有0·5〜20重量%及前述光酸產生劑含有0.005〜10重 -67- (64) 1354864 量%。 本發明之負型感光性組成物(Ν,)、前述負型 組成物(N2)及前述負型感光性組成物(N3)中, 可含有例如塗佈性改良劑、密合性改良劑、感度改 感脂化劑、著色劑、顯像性改良劑等感光性組成物 之各種添加劑。 本發明之藍紫色雷射感光性組成物係在3 90至 之波長範圍內具有分光感度之極大波峰者,更理想 至420nm之波長範圍內具有分光感度之極大波峰者 達前述波長範圍內具有分光感度之極大波峰時,感 成物對於波長390至43 Onm之雷射光之感度有降低 ,在超過前述波長範圍內具有分光感度之極大波峰 色燈下之安全燈特性有降低的傾向。 本發明中,分光感度之極大波峰係指例如「 PhotoPolymer technology」(山岡亞夫著,昭和 63 工業新聞公司發行,第262頁)等所述,在基板表 感光性組成物層之感光性圖像形成材試料,使用分 測定裝置,使由氙燈或鎢燈等光源所分光的光,於 向曝光波長爲直線變化,對於縱軸方向曝光強度呈 化,經曝光後,進行顯像處理可得到對應各曝光波 度的圖像,由該圖像之高度計算可形成圖像之曝光 橫軸爲波長,縱軸爲該曝光能之倒數描繪所得之分 曲線的極大波峰。 本發明之藍紫色雷射感光性組成物,其波長41 感光性 必要時 良劑、 所常用 4 3 0 n m 爲 400 。在未 光性組 的傾向 時,黃 年曰刊 面形成 光感度 橫軸方 對數變 長之感 能,以 光感度 Onm之 -68- (65) (65)1354864 可形成圖像之最小曝光量[S41〇 ( mJ/cm2 )]對波長450nm 之可形成圖像之最小曝光量[S450 ( mJ/cm2)]的比 [S41c/S45()]爲 0.1 以下,更理想爲 0.05 以下。此[S4l〇/S 4 5 0] 超過前述範圍時,很難兼具藍紫色雷射感光性與黃色燈下 之安全燈特性的傾向。 前述波長410nm之可形成圖像之最小曝光量[S41Q]及 波長450nm之可形成圖像之最小曝光量[S45C]係指利用前 述分光感度測定裝置測定分光感度的極大波峰中,由圖像 高度計算所得之可形成圖像之曝光能量,此時改變顯像液 種類、顯像溫度、顯像時間等顯像條件所決定之最適當顯 像條件下’可形成圖像時之最小曝光量,該最適當顯像條 件一般係採用Ρ Η 1 1至1 4之鹼顯像液,以溫度2 5。(:浸漬 0.5至3分鐘的條件。 <圖像形成材料(A )及圖像形成材(Β ) > 本發明之負型藍紫色雷射感光性組成物可用於形成本 發明之負型藍紫色雷射感光性圖像形成材料(A )(以下 有時僅稱爲圖像形成材料(A ))。圖像形成材料(a ) 通常係將前述各成分溶解或分散於適合之溶劑的塗佈液, 再塗佈於假支持薄膜上’經乾燥後,必要時以被覆膜覆蓋 所形成之感光性組成物層表面所形成的。這種圖像形成材 料(A )例如有乾膜光阻材料等。 上述圖像形成材料(A)可用於形成本發明之負型藍 紫色雷射感光性圖像形成材(B )(以下有時僅稱爲圖像 -69- (66) 1354864 形成材(B))。圖像形成材(B)通常有2種型態 方法。其一係將圖像形成材料(A)之感光性組成 以被覆膜覆蓋時’將該被覆膜剝離,層合於被加工 所作成的。另一係以下述(1 )〜(3 )的順序來製 1)將前述負型藍紫色雷射感光性組成物之各成分 分散於適合之溶劑成爲塗佈液。(2)直接塗佈於 基板上,然後乾燥。(3)被加工基板上形成本發 型藍紫色雷射感光性組成物的層。 圖像形成材(B)係適用於以下之圖像形成方 言之’將圖像形成材(B)以波長390至43 Onm之 掃描曝光,進行顯像處理形成圖像。 作爲乾膜光阻材料等之圖像形成材料(A )使 假支持膜例如有聚對苯二甲酸乙二醇酯膜、聚醯亞 聚醯胺醯亞胺膜、聚丙烯膜、聚苯乙烯膜等公知之 此時’這些具有製作圖像形成材料(A )時所需要 劑性或耐熱性等者時,可直接將感光性組成物塗佈 於該假支持膜上’經乾燥後可製作本發明之圖像形 (A) ’這些膜之耐溶劑性或耐熱性等即使較差, 可於聚四氟乙烯膜或離型膜等具有離模性之膜上形 性組成物層後’其層上再層合耐溶劑性或耐熱性等 假支持膜。其後將具離模性之膜予以剝離,可製作 之圖像形成材料(A )。另外,特別追求高解像力 支持膜之霧度(Haze)値理想爲〇.〇1〜].8 %,又假 之厚度理想爲10〜30μπι。 的製作 物層側 基板上 作。( 溶解或 被加工 明之負 法。換 雷射光 用時之 胺膜、 薄膜》 之耐溶 液塗佈 成材料 例如也 成感光 較差之 本發明 時,假 支持膜 -70- (67) (67)1354864 塗佈液所使用之溶劑只要是對於使用成分具充分溶解 度,且能賦予良好的塗膜性者,即無特別限制,例如有甲 基溶纖劑、乙基溶織劑、甲基溶纖劑乙酸酯、乙基溶纖劑 乙酸酯等溶纖劑系溶劑;丙二醇單甲醚、丙二醇單乙酸、 丙二醇單丁醚 '丙二醇單甲醚乙酸酯、丙二醇單乙醚乙酸 酯、丙二醇單丁醚乙酸酯、二丙二醇二甲醚等丙二醇系溶 劑;乙酸丁酯、乙酸戊酯、丁酸乙酯、丁酸丁酯、二甲基 草酸酯、丙酮酸乙酯、乙基-2-羥基丁酸酯、乙基乙醯乙酸 酯、乳酸甲酯、乳酸乙酯、3-甲氧基丙酸甲酯等酯系溶劑 ;庚醇、己醇 '二丙酮醇、糠醇等醇系溶劑;環己酮、甲 基戊酮等酮系溶劑;二甲基甲醯胺、二甲基乙醯胺、N -甲 基吡咯烷酮等高極性溶劑或其混合溶劑,又,這些溶劑中 可添加芳香族烴者等。溶劑使用量係對於感光性組成物總 量之重量比一般爲1至20倍。 其塗佈方法可使用公知的方法,例如有回轉塗佈、鋼 刷塗佈、噴射塗佈、浸漬塗佈、空氣力塗佈、滾軸塗佈、 刮板塗佈、篩塗佈及簾幕塗佈等方法。塗佈量係從後述之 圖像形成及其後續之蝕刻或鍍敷等加工性的觀點,乾燥腠 厚較佳爲Ο.ίμηι以上’更佳爲lOpm以上,又,從感度的 觀點’較佳爲200μπι以下,更佳爲1〇〇μηι以下。此時所 採用之乾媒溫度例如3 0至1 5 0 °C,較佳爲4 0至1 1 0 °C, 乾燥時間例如5秒至60分鐘,較佳爲1 〇秒至3〇分鐘。 另外’柃別追求局解像力時,被覆膜之表面粗度之與感光 性組成物接觸面的Ra爲〇」5μιη以下,Rmax爲以 -71 - (68) 1354864 下,被覆膜中所含有之直徑80μπι以上 /m2以下爲佳。 可作爲乾膜光阻材料等之圖像形试 ,該圖像形成材料(A)被層合於被加 之感光性組成物層表面以被覆膜覆蓋爲 用聚乙烯膜、聚丙烯膜、聚四氟乙烯膜 上述圖像形成材料(A)之感光性 膜覆蓋時,將該被覆膜剝離,再加熱、 或直接塗佈感光性組成物塗佈液再乾燥 像形成材(B)之被加工基板係藉由雷 成之感光性組成物層浸進行曝光、顯像 圖像作爲光阻,利用蝕刻加工或電鍍加 形成電路或電極等圖型者,例如可爲銅 '鋅、錫、鉛、鎳等金屬板。一般可使 聚醯亞胺樹脂、雙馬來醯亞胺樹脂、不 酚樹脂、三聚氰胺樹脂等熱硬化樹脂; 碳酸酯樹脂 '聚碼樹脂、丙烯酸樹脂、 乙烯樹脂、聚氯乙烯樹脂、聚烯烴樹脂 性樹脂等樹脂;紙、玻璃、氧化鋁、二 碳酸鈣等無機物;或玻璃布基材環氧樹 材環氧樹脂、紙基材環氧樹脂、紙基材 料等所形成,厚度爲0.02至10mm之絕 ,加熱、層壓前述金屬或氧化銦、氧化 化錫等金屬氧化物等之金屬箔,或利用 之魚眼個數爲5個 ^材料(A )使用時 工基板之間,形成 佳,該被覆膜可使 等公知之薄膜。 組成物層側以被覆 加壓等進行層合, ’製作本發明之圖 射光等對其上所形 處理,所得之負型 工等’可於其表面 、銘、金、銀、銘 用例如環氧樹脂、 飽和聚酯樹脂、苯 飽和聚酯樹脂、聚 聚酿胺樹脂、聚苯 、氟樹脂等熱可塑 氧化矽、硫酸鋇、 脂、玻璃不織布基 苯酚樹脂等複合材 緣性支持物表面上 錫、氧化銦摻雜氧 濺鍍、蒸鍍、電鍍 -72- (69) (69)I354864 等方法處理金屬等的方法,形成厚度1至100 μιη之導電層 的金屬層合板。 直接塗佈前述感光性組成物塗佈液再乾燥,製作本發 明之圖像形成材(Β)時,如前述在前述被加工基板上所 形成之前述感光性組成物層上,可形成防止因感光性組成 物之氧之聚合抑制作用的氧遮斷層,或爲了調整感度之波 長範圍之光透過性調整層等的保護層。 構成該氧遮斷層者例如可溶於水或水與醇或四氫呋喃 等水混合性有機溶劑之混合溶劑的水溶性高分子,具體而 言例如有聚乙烯醇及其部分乙縮醛化物、利用四級銨鹽等 之陽離子改性物、利用磺酸鈉等之陰離子改性物等衍生物 ’聚乙烯吡咯烷酮、聚環氧乙烷、甲基纖維素、羧甲基纖 維素、羥乙基纖維素、羥丙基纖維素等。其中就氧遮斷性 等觀點,較佳爲聚乙烯醇及其衍生物,又,從與感光性組 成物之密合性等觀點,較佳爲聚乙烯吡咯烷酮或乙烯基吡 咯烷酮-乙酸乙烯酯共聚物等之乙烯基吡咯烷酮系聚合物 。氧遮斷層係使用對於聚乙烯醇或其衍生物丨〇〇重量份時 ’混合1至20重量份,較佳爲3至15重量份之聚乙烯吡 咯烷酮聚合物之混合物爲佳。 從賦予保存性等觀點,氧遮斷層較佳爲含有琥珀酸等 有機酸或乙—胺四乙酸等有機酸鹽等,也可含有聚環氧乙 烷烷基苯醚等非離子性、十二烷基苯磺酸鈉等陰離子性或 烷基三甲基銨氯化物等陽離子性等之界面活性劑、消泡劑 、色素、可塑劑、ΡΗ調整劑等。這些合計含量較佳爲 -73- (70) (70)1354864 重量%以下,更佳爲5重量%以下。 該氧遮斷層係以水或水與水混合性有機溶劑之混合溶 劑之溶液形態,利用與上述感光性光組成物層相同之塗佈 法所形成,其塗佈量係以乾燥膜厚1至l〇g/m2,更佳爲 1 . 5 至 7g/m2。 構成光透過性調整層者係高分子結合材中含有例如香 豆素系色素等之可見光領域之光吸收色素者,又,此時高 分子結合材爲前述氧遮斷層所列舉之聚乙烯醇或其衍生物 或聚乙烯吡咯烷酮系聚合物,可形成具有氧遮斷能及光透 過性調整能之保護層。 上述製作之被加工基板上具有本發明之藍紫色雷射感 光性組成物層的圖像形成材(B)係具有由前述負型感光 性組成物(N !)所構成之感光性組成物層者爲佳,此時爲 了具有殘膜率-曝光量特性、或前述顯像速度-曝光量特性 時,構成感光性組成物層之前述負型感光性組成物(N i ) 之聚合抑制劑的含量較佳爲5〜60ppm,聚合抑制劑含量 之下限較佳爲lOppm,上限爲50ppm。 <圖像形成方法> 被加工基板上具有本發明之藍紫色雷射感光性組成物 層的本發明之圖像形成材(B )係藉由上述圖像形成材料 (A)形成感光性組成物層時,將假支持膜剝離後,或直 接塗佈前述感光性組成物塗佈液,經乾燥形成感光性組成 物層時’具有前述保護層等時’將該保護層剝離後,該感 -74- (71) (71)1354864 光性組成物層以雷射光爲曝光光源進行掃描曝光後,進行 顯像處理,在前述被加工基板上形成負型圖像。 該雷射曝光光源例如有HeNe雷射、氬離子雷射、 YAG雷射、HeCd雷射、半導體雷射、紅寶石雷射等,特 別理想爲產生波長範圍390至430nm之藍紫範圍的雷射光 的光源’並無特別限制,具體例如產生4 1 0 n m振邊之氮化 銦鎵半導體雷射等。 以雷射光源之掃描曝光方法並無特別限制,例如有平 面掃描曝光方式、外面轉筒掃描曝光方式、內面轉筒掃描 曝光方式等,又,雷射輸出光強度較佳爲1至lOOmW,更 佳爲3至70 mW,震盪波長較佳爲3 90至430nm,更佳爲 400至420nm,電子束光點徑較佳爲〇.5至30μπι,更佳爲 1至20μηι,掃描速度較佳爲50至500m/秒,更佳爲1〇〇 至400m/秒,掃描密度較佳爲 2,000dpi以上,更佳爲 4,000dpi以上進行掃描曝光。 上述雷射掃描曝光後之顯像處理較佳爲使用含有鹼成 分與界面活性劑之水性顯像液。該鹼成分例如有矽酸鈉、 矽酸鉀、矽酸鋰、矽酸銨、偏矽酸鈉、偏矽酸鉀、氫氧化 鈉、氫氧化鉀、氫氧化鋰、碳酸鈉、碳酸氫鈉、碳酸鉀、 第二磷酸鈉、第三磷酸鈉、第二隣酸錢、第三憐酸鞍、硼 酸鈉、硼酸鉀、硼酸銨等無機鹼鹽;單甲胺、二甲胺、三 甲胺、單乙胺、二乙胺、三乙胺、單異丙胺、二異丙胺、 單丁胺、單乙醇胺、二乙醇胺、三乙醇胺、單異丙醇胺、 二異丙醇胺等有機胺化合物等,又,使用濃度爲0.1至5 -75- (72) (72)1354864 重量%。 上述界面活性劑例如與上述感光性組成物所列舉相同 的界面活性劑,其中較佳者爲非離子性、陰離子性、或兩 性界面活性劑,特別理想爲兩性界面活性劑之甜菜鹼型化 合物。該界面活性劑之使用濃度較佳爲0.0001至20重量 %,更佳爲0.0005至10重量%,特佳爲0.001至5重量% 〇 必要時,顯像液中可含有例如異丙醇、苯甲醇、乙基 溶纖劑、丁基溶纖劑 '苯基溶纖劑、两二醇、二丙酮醇等 有機溶劑。又,顯像液之pH較佳爲9至1 4 ,更佳爲1 1 至1 4。 顯像一般係藉由將圖像形成材料浸漬於上述顯像液, 或將顯像液噴霧在圖像形成材料上等已知的顯像法,以1〇 至5 0 °c,更佳爲15至4 5 °c的溫度進行5秒至10分鐘 。顯像處理後’形成之負型圖像例如以高壓水銀燈等光源 照射’或/及例如以1 40至1 60 °C的溫度加熱處理,提高光 阻之耐藥性等。 【-實施方式】 [實施例] 以下以實施例更具體說明本發明,只要不超越本發明 之實質時,並不限於以下之實施例。 實施例1〜2、比較例1 -76- (73) (73)1354864 將下述增感劑(1)〜(6) '乙烯性不飽和化合物( 1 )、光聚合引發劑(1 )、鹼可溶性樹脂(1 )〜(2 )及 其他成分(1)〜(3)依表1配方添加於甲基乙基酮/異 丙醇(重量比8/2 )之混合溶劑1 00重量份中,室溫下搜 拌調製塗佈液。使用塗佈器將塗佈液以形成乾燥膜厚爲 20μιη的量塗佈於假支持膜之聚對苯二甲酸乙二醇醋 (厚度19μιη)上,再以90°C之烘箱乾燥。形成之負型感 光性組成物(N!)層上層合被覆膜之聚乙烯薄臆 映(厚度 2 5 μιη ) ’製作負型藍紫色雷射感光性圖像形成材料(> <增感劑> (1 )下述化合物(極大吸收3 6 5 nm/包含於前#胃 )之化合物) (2) 下述化合物(極大吸收3 86nm/包含於前述θ ΙΠ)之化合物) (3) 下述化合物(極大吸收3 89nm/包含於前述胃 XI)之化合物) (4) 下述化合物(極大吸收3 78nm/包含於前述胃 ΧΠ )之化合物) (5) 下述化合物(極大吸收4l4nm /包含於前 ΧΠ)之化合物) (6) 下述化合物(極大吸收3 65nm/包含於前^胃 XII )之化合物) -77- (74)1354864R R14 R1 19-iV - C- (CH2 ) 〇II -CO' (vilb) [In the formulae (Vila) and (Vllb), R14 and R15 each independently may have a substituent alkyl group, and may have a substituent An aryl group which may have a heterocyclic group or a hydrogen atom of a substituent, R16 and R17 each independently an alkyl group or a hydrogen atom which may have a substituent, R18 may be an alkyl group which may have a substituent, and an alkenyl group which may have a substituent Or an aryl group which may have a substituent, or a heterocyclic group which may have a substituent, and P is an integer of 0 to 10. The alkyl groups of R14, R15, RU, Ri7, Ris and R19 in the formulas (Vila) and (Vllb) preferably have a carbon number of from 1 to 8, more preferably from 丨 to 4. The alkenyl group of r]* is, for example, a vinyl group, an allyl group or an isopropenyl group, and the aryl group of Rm, R18 and R19 is, for example, a phenyl group or a naphthyl group, and the heterocyclic group of r14 and rM is, for example, a furyl group. Pyrrolyl, pyridyl and the like. Examples of the substituent of the alkyl group and the alkenyl group include an alkoxy group, an alkoxycarbonyl group, an alkenyloxy group, an alkenyloxycarbonyl group, a phenyl group, a halogen atom and the like. The substituents of these aryl groups and heterocyclic groups may have, for example, an alkoxy group. An alkyl group, an alkoxy group, an alkenyl group, a oxy group, a decyl group, a decyloxy group, a oxo group, a phenoxy group, an alkylthio group, an alkylsulfonyl group and an aldehyde group a carboxyl group, a hydroxyl group, a sulfo group, a nitro group, a cyano group, a halogen atom or the like. In the present invention, the above general formula (Vila) or (Vllb) represents an amino acid ester or a bipolar ion compound of -58 - (55) (55) 1354486, and Rm and Rh in the formula (Vila) One is a hydrogen atom, the other is a phenyl group which may have a substituent, R16 and R17 are a hydrogen atom, R18 is an alkyl group which may have a substituent, or a phenyl group which may have a substituent, and P is 0, 1 or 2 The amino acid ester, or R14 and R15 in the formula (VIIb) are a hydrogen atom, or one of them is an alkyl group which may have a substituent, Rh and R17 are a hydrogen atom, R19 is an alkyl group which may have a substituent, or A phenyl group having a substituent, and p is an amino acid bipolar ion compound of 0, 1, or 2. In the above general formula (Vila), p is 0, R14 and R15 are each a hydrogen atom, the other is a phenyl group, R16 and R17 are hydrogen atoms of N-phenylglycine, and R18 is a benzyl group. In the benzyl N-phenylglycine or the above formula (VIIb), p is hydrazine, R14, R15, R16 and R1, wherein - the hydrogen atom 'R19 is a phenyl group N-phenylgan Bipolar ionic compound of aminic acid. The polymerization accelerator is, for example, an amine compound, and the amine compound may be an aliphatic, alicyclic or aromatic amine, and is not limited to a monoamine, and may be a polyamine such as a diamine or a triamine, or may be a first amine or a second. An amine or a third amine, but preferably having a pKb of 7 or less. Specific examples of the amine compound are butylamine, dibutylamine, tributylamine 'penta-, penta makeup, diamylamine, hexylamine, dihexylamine, trihexylamine, alanine, diallylamine, triallylamine. An aliphatic amine which may be substituted with a hydroxyl group or a phenyl group such as triethanolamine, benzylamine or diphenylmethylamine 'tritylamine. Among them, among the present invention, triphenylmethylamine is particularly desirable. The polymerization accelerator is, for example, 2-mercaptobenzothiazole, 2-mercaptobenzimidazole '2-mercaptobenzoxazole, 3 毓 丨 丨, 2,4 · triazole, 2 锍 _ _ 4 ( 3 η )-D quinoxaline, β-mercaptophthalene, ethylene glycol dithiopropionate, trimethylolpropane-59- (56) (56) 1354864 trithiopropionate, pentaerythritol tetrathiopropionate And other thiol-containing compounds; dimethyldithiolan, trimethylolpropane tridecyl acetate, pentaerythritol tetramercaptopropionate and other polyfunctional thiophene compounds; N,N-dialkylamino benzene An amine group having an aromatic ring such as a salt of a formate or N-phenylglycine or a salt thereof such as an ammonium or a sodium salt, a salt of a phenylalanine acid or an ammonium or a sodium salt thereof, or a derivative thereof. An acid or a derivative thereof. The present invention is preferably a derivative containing a mercapto compound and N-phenylglycine or a salt thereof such as an ammonium salt or a sodium salt. In the blue-violet laser photosensitive composition of the present invention, the ratio of the polymerization accelerator contained in the negative photosensitive composition (N!) is 30% by weight for the total amount of the negative photosensitive composition (N,). % or less, more preferably 20% by weight or less. The negative photosensitive composition (N i ) of the present invention may contain nonionic and anionic properties in order to improve coating properties when forming a photosensitive composition layer on a substrate and development of a photosensitive photoresist layer. a surfactant such as a cationic, amphoteric or fluorine-based surfactant, specifically, for example, the nonionic surfactant is, for example, a polyethylene oxide alkyl ether, a polyethylene oxide polypropylene oxide alkyl ether, or a poly Ethylene oxide alkylphenyl ethers, polyethylene oxide alkyl esters, polyethylene oxide fatty acid esters, glycerin fatty acid esters, polyethylene oxide glycerin fatty acid esters, pentaerythritol fatty acid esters, Polyethylene oxide pentaerythritol fatty acid esters, sorbitan fatty acid esters, polyethylene oxide sorbitan fatty acid esters, sorbitol fatty acid esters, polyethylene oxide sorbitol fatty acid esters, etc. The anionic surfactants are, for example, alkyl sulfonates, alkyl benzene sulfonates, alkyl naphthalene sulfonates, polyethylene oxide alkyl ether sulfonates, alkyl sulfates, Alkyl sulfate salts, higher alcohols -60- (57) 1354864 Acid esters, aliphatic alcohol sulfates, 'polyethylene oxide alkyl ether salts', polyethylene oxide alkyl phenyl ether sulfates, alkyl phosphates, polyethylene oxide alkyl ethers Examples of the 'cationic surfactants such as phosphates and polyethylene oxide alkylphenylates include quaternary ammonium salts, porphyrin derivatives, amine salts, etc., and amphoteric surfactants such as beet compounds. , imidazole mirror salts, imidazolines, amino acids and the like. In the blue-violet laser photosensitive composition of the present invention, the ratio of the surfactant contained in the negative photosensitive material (N) is a negative optical composition (when the total amount of Nd is 1% by weight or less) 5% by weight or less. The negative photosensitive composition (N,) of the present invention may contain 2% by weight or less of the total amount of the negative photosensitive composition (N,). Antioxidants such as phenol, 2,6-di-t-butyl-p-cresol, 2,4-tris-tert-butylphenol, 4,4'-methylene bis (2,6-di-t-butylbenzene, etc. It may contain 20% by weight or less of a coloring agent composed of organic or non-pigmenting, and may contain 40% by weight or less of dioctyl dicarboxylate, behenyl phthalate or tricresol phosphate plasticizer. The dye precursor may be contained in an amount of 30% by weight or less. In the blue-violet laser photosensitive composition of the present invention, the negative-sensitive composition may contain, for example, the sensitizer, an alkali-soluble resin, the crosslinking agent, and light. The acid generator is a negative photosensitive composition of the basic composition N2). <Negative photosensitive composition (N2) > Sulfate ether phosphoimidazole basic type feeling is better, such as 2,6-phenol) Machine-dyed benzene and other light resin (-61 - (58) (58) 1354864 In the present invention, the alkali-soluble resin constituting the negative photosensitive composition (N 2 ) is produced by the action of the sensitizer when the photosensitive composition is irradiated with active light. The agent generates an acid, and a resin having a crosslinked structure is formed by using a crosslinking agent described later, and the alkali-soluble resin is, for example, a phenol-containing warp-based resin and a residue-containing ethylenic resin, etc. The negative photosensitive composition ( In the case of N2), for example, a phenol resin such as a polyvinyl phenol resin, a phenol resin, a resol resin, a copolymer resin such as a phenolic hydroxyl group-containing acrylic acid derivative, or a polyvinyl acetal resin having a phenolic hydroxyl group; The hydroxy resin is preferably a polyvinyl phenol resin, a phenol resin such as a phenol resin or a resol resin, and particularly preferably a polyvinyl phenol resin and a phenol resin. The polyvinyl phenol resin has, for example, an o-hydroxy group (α). Methyl)styrene ["(α-methyl)styrene" means "styrene" or / and ra_methylstyrene" the same as below], m-hydroxy (a-methyl)styrene, p-hydroxyl (α-methyl)styrene, dihydroxy(α-methyl)styrene, trihydroxy(α-methyl)styrene, tetrahydroxy(α-methyl)styrene, pentahydroxy(α-methyl)benzene One or more of hydroxy (α-methyl)styrenes such as ethylene or (α-methyl)styrene, having an alkoxy 'fluorenyl group, a decyloxy group, a propyleneoxy group, an aryloxy group, a halogen atom Other amino-based compounds such as (α-methyl) styrene, (meth)acrylic acid, (meth) acrylate, maleic acid, and yttrium imide, other than a hydroxyl group, in free radicals Polymerization or copolymerization is carried out in the presence of a polymerization initiator or a cationic polymerization initiator, or these styrene derivatives protected by a hydroxy group of a methyl group styrene are polymerized or copolymerized, and then the protecting group is removed. -62- (59) (59)1354864 The phenolic resin is, for example, phenol, o-cresol, m-cresol, p-formamidine, 2,5-xylenol, 3,5-xylenol, o-ethylphenol, M-ethyl benzoquinone, p-ethyl benzene, propyl benzoquinone, n-butyl phenyl hydrazine, tert-butyl phenol, 1-naphthoquinone, 2-caffeene, 4' 4:-biphenyl diol, double At least one of 酣a, pyrophyllin, isophthalic acid, hydroquinone, pyrogallol, 1,2,4-benzenetriol, fluorosorbate, etc. under acid catalyst, and for example Awake, aldehydes such as formaldehyde, acetaldehyde, acetaldehyde, propionaldehyde, benzaldehyde, aldaldehyde, or at least one of ketones such as propyl ketone, methyl ethyl ketone, methyl isobutyl ketone, etc. Further, the resol phenol resin is subjected to polycondensation in the same manner, for example, by using an alkali catalyst instead of an acid catalyst. The weight average molecular weight of these phenol-containing hydroxy resins is from 10 to 5 Å, and 0 0 0. In the negative photosensitive composition (N2), when the crosslinking agent-based photosensitive composition is irradiated with active light, the alkali-soluble resin is formed into a crosslinked structure. The representative of the crosslinking agent has at least two The functional group is a methylol group, an alkoxymethyl group such as an alkoxymethyl group obtained by condensation-modifying an alcohol, or the like. Specifically, for example, a melamine resin in which melamine is condensed with formaldehyde, a benzoguanamine resin in which benzoguanamine is condensed with formaldehyde, a glycoluril resin which is polycondensed with glycoluril and formaldehyde, and a urea which is condensed with urea and formaldehyde. Two kinds of resins, such as resin, melamine, benzoguanamine, glycoluril or urea, which are copolymerized and condensed with toluene and a modified resin in which the methylol group of these resins is modified by alcohol condensation. These are sold, for example, under the trade names of "Sytech" by Mitsui Scitech, and "Nikalac" by ChemicaI. -63- (60) 1354864 The crosslinking agent also contains an epoxy group-containing polyglycidyl ether compound obtained by reacting a polyhydroxy compound constituting a repeating unit of a so-called epoxy resin with propane, and a polycarboxylate. A polyglycidylamine compound obtained by the reaction of an acidified chloropropane and a polyglycidylamine compound obtained by reacting polyamined epichlorohydrin, and the like, from a compound to a high molecular weight compound. Specific examples of such polyglycidyl ether compounds are polyethylene glycol glyceryl ether type epoxy, bis(4-hydroxyphenyl) diglycidyl ether 'bis(3,5-dimethyl-4-phenyl) ) bis glycidyl ether type bisphenol F diglycidyl ether type epoxy, bisphenol A diglycidyl epoxy, tetramethyl bisphenol A bis glycidyl ether type epoxy, additional alkane bisphenol A Diglycidyl ether type epoxy, phenol novolac lacquer, and the like. Among these polyglycidyl ether compounds, a carboxyl group obtained by reacting a residual hydroxyl group or a divalent oxygen compound can be introduced. Specific examples of the polyglycidyl esterification include a diglycidyl ester type epoxy of hexahydrophthalic acid, an oligoglycidyl type epoxy of an acid, and the like, and a polyglycidylamine compound is bis(4-aminophenyl). Methane diglycidylamine type cycloglycolic acid triglycidylamine type epoxy or the like. In the present invention, when the photoreceptor photosensitive composition constituting the negative photosensitive composition (N 2 ) is irradiated with active light, an active compound of an active species is generated by the above-mentioned action, and the photoacid generator halogen-substituted chain A halogen-containing key salt such as an alkane or a halomethylated S-triazine derivative, and a compound such as a sulfonate are preferable. For example, an epoxy and diacid generating sensitizer of an epoxy compound and a condensate and a low molecular weight diepoxy epoxy, an oleyl ether epoxy epoxy resin and an acid anhydride compound. For example, there is a substance, a compound of -64 - (61) (61) 1354864. The halogen-substituted alkane of the halogen-containing compound and the tooth-methylated S-tri-D-Qin derivative are, for example, the aforementioned negative photosensitive composition (N). ,) The photopolymerization initiator is the same as listed. The gun salt is, for example, an ammonium salt such as tetramethylammonium bromide or tetraethylammonium bromide; diphenyliodonium hexafluoroarsenate, diphenyl iodine tetrafluoroborate, diphenyl iodine gun toluene Sulfonate, diphenyl iodide sulfonate, dicyclohexyl iodide hexafluoroarsenate, dicyclohexyl iodide tetrafluoroborate, dicyclohexyl iodide p-toluenesulfonate, dicyclohexyl iodide Iodine gun salt such as sulfonate sulfonate; triphenylsulfonium hexafluoroarsenate, triphenylsulfonium tetrafluoroborate, triphenylsulfonium p-toluenesulfonate, triphenylsulfonium sulfonate, tricyclic Hexyl hexafluoroarsenate, tricyclohexyl fluorene tetrafluoroborate, tricyclohexyl fluorene p-toluene sulfonate, tricyclohexyl sulfonium sulfonate and the like. Specific examples of the compound include bis(phenylsulfonyl)methane, bis(p-hydroxyphenylsulfonyl)methane, bis(p-methoxyphenylsulfonyl)methane, and bis(α-naphthylsulfonate). Mercapto) methane, bis(β-naphthylsulfonyl)methane, bis(cyclohexylsulfonyl)methane, bis(t-butylsulfonyl)methane, phenylsulfonyl (cyclohexylsulfonyl) a bis(sulfonyl)methane compound such as methane; phenylcarbonyl(phenylsulfonyl)methane, naphthylcarbonyl(phenylsulfonyl)methane, phenylcarbonyl(naphthylsulfonyl)methane' cyclohexyl a carbonyl group such as carbonyl (phenylsulfonyl)methane, tert-butylcarbonyl (phenylsulfonyl)methane, phenylcarbonyl (cyclohexylsulfonyl)methane, phenylcarbonyl (t-butylcarbonyl)methane ( Sulfhydryl)methane compound; bis(phenylsulfonyl)diazomethane, bis(p-hydroxyphenylsulfonyl)diazomethane, bis(p-methoxyphenylsulfonyl)diazomethane, double (α-naphthylsulfonyl-65-(62) (62)1354864) Diazomethane, bis(β·naphthylsulfonyl)diazomethane, bis(cyclohexyl) Sulfhydryl)diazomethane, bis(t-butylsulfonyl)diazomethane, phenylsulfonyl (cyclohexylsulfonyl)diazomethane, bis(sulfonyl)diazomethane compound; benzene Carbonyl (phenylsulfonyl) diazomethane, naphthylcarbonyl (phenylsulfonyl) diazomethane, phenylcarbonyl (naphthylsulfonyl) diazomethane, cyclohexylcarbonyl (phenylsulfonyl) a carbonyl group such as diazomethane, tert-butylcarbonyl (phenylsulfonyl)diazomethane, phenylcarbonyl (cyclohexylsulfonyl)diazomethane, phenylcarbonyl (t-butylcarbonyl)diazomethane (sulfonyl) diazomethane compounds and the like. In the negative blue-violet laser photosensitive composition of the present invention, the content ratio of the sensitizer, the alkali-soluble resin, the crosslinking agent, and the photo-acid generator constituting the negative photosensitive composition (N2) In the case of 100 parts by mass of the alkali-soluble resin, the sensitizer is contained in an amount of 0.1 to 30% by weight, the crosslinking agent is contained in an amount of 1 to 80% by weight, and the photoacid generator is contained in an amount of 0.001 to 30% by weight, more preferably The sensitizer contains 0.5 to 20% by weight, the crosslinking agent contains 5 to 60% by weight, and the photoacid generator contains 0.005 to 10% by weight. In the blue-violet laser photosensitive composition of the present invention, the negative photosensitive composition contains, for example, the negative sensitizing agent containing an acid crosslinkable group resin and a photoacid generator as a basic composition. (N3). <Negative photosensitive composition (N 3 ) > In the present invention, the acid-containing crosslinkable resin constituting the negative photosensitive composition (N3) is obtained by irradiating the photosensitive composition with active light. Pre-66- (63) (63) 1354486 The use of a photoacid generator forms a resin having a crosslinked structure. The acid crosslinkable group may, for example, be a methylol group, an alkoxymethyl group, a vinyl ether group or an epoxy group. The acid-crosslinkable group-containing resin containing the acid-crosslinkable group is not particularly limited as long as it contains two or more of these acid-crosslinkable groups in the molecule, and specifically, for example, the above-mentioned negative-type photosensitive composition The phenolic resin such as a phenol resin such as a soluble resin, a phenol resin such as a resol resin, and a phenolic hydroxyl group of a phenolic hydroxyl group-containing resin such as a polyvinyl phenol resin, which are listed in (N 2 ), are etherified or esterified. The resin of the acid crosslinkable group and at least a part of the carboxyl group of the carboxyl group-containing vinyl resin of the alkali-soluble resin exemplified as the negative photosensitive composition (N j ) are esterified, and the acid crosslinkable group is introduced. A resin or a resin obtained by polymerizing or copolymerizing the vinyl monomer having an acid crosslinkable group and introducing the acid crosslinkable group. Among them, preferred are phenolic resins or polyvinyl phenol resins, and it is particularly preferred to be based on phenolic resins. The resin containing an acid crosslinkable group means a resin containing an acid crosslinkable group and a resin having no acid crosslinkable group introduced therein. In the present invention, the photoacid generator constituting the negative photosensitive composition (N3) is, for example, the same as the photoacid generator exemplified for the negative photosensitive composition (N2). In the blue-violet laser photosensitive composition of the present invention, the content ratio of the sensitizer, the acid-crosslinkable group-containing resin, and the photoacid generator constituting the negative photosensitive composition (n3) is as described above. When the acid-crosslinkable group-containing resin is 100 parts by mass, the sensitizer is contained in an amount of 0.1 to 30% by weight, and the photoacid generator is contained in an amount of 0.001 to 30% by weight, more preferably the sensitizer is contained in an amount of 0.5 to 20% by weight. % and the above photoacid generator contain 0.005 to 10 weight-67-(64) 1354864% by volume. The negative photosensitive composition (Ν), the negative composition (N2), and the negative photosensitive composition (N3) of the present invention may contain, for example, a coating property improver, an adhesion improver, and Sensitively, various additives such as a photosensitive composition such as a lipid stabilizer, a colorant, and a development improver. The blue-violet laser photosensitive composition of the present invention has a maximum peak of spectral sensitivity in a wavelength range of 3 90 to 90, more preferably a maximum peak having a spectral sensitivity in a wavelength range of 420 nm, and has a spectral range in the aforementioned wavelength range. At the time of the maximum peak of the sensitivity, the sensitivity of the sensed light to the laser light having a wavelength of 390 to 43 Onm is lowered, and the characteristic of the safety lamp under the maximum peak color lamp having the spectral sensitivity exceeding the above-mentioned wavelength range tends to be lowered. In the present invention, the maximum peak of the spectral sensitivity is a photosensitive image of the photosensitive composition layer on the substrate, as described in, for example, "PhotoPolymer technology" (issued by Yamaoka Yasushi, published by Industrial News, Inc., p. 262). The material sample is formed, and the light split by the light source such as a xenon lamp or a tungsten lamp is linearly changed to the exposure wavelength by the minute measuring device, and the exposure intensity is normalized in the vertical axis direction. After the exposure, the development process is performed to obtain a corresponding image. The image of each exposure waviness is calculated from the height of the image to form an image whose horizontal axis of exposure is the wavelength, and the vertical axis is the maximum peak of the sub-curve of the exposure energy. The blue-violet laser photosensitive composition of the present invention has a wavelength of 41 and is preferably a good agent, and a commonly used 4 3 0 n m is 400. In the tendency of the unlighted group, the yellow year 曰 形成 形成 形成 形成 形成 形成 形成 形成 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光 68 68 68 68 68 68 68 68 68 68 68 68 68 68 68 68 68 68 68 68 68 68 68 The ratio [S41c/S45()] of [S41〇(mJ/cm2)] to the minimum exposure amount [S450 (mJ/cm2)] of the image formable wavelength of 450 nm is 0.1 or less, more preferably 0.05 or less. When the above [S4l〇/S 4 5 0] exceeds the above range, it is difficult to have both a blue-violet laser sensitivity and a safety lamp characteristic under a yellow lamp. The minimum exposure amount [S41Q] at which the image can be formed at a wavelength of 410 nm and the minimum exposure amount at which the image can be formed at a wavelength of 450 nm [S45C] is the maximum peak in which the spectral sensitivity is measured by the spectroscopic sensitivity measuring device, and the image height is Calculating the exposure energy of the image that can be formed, and changing the minimum exposure amount when the image can be formed under the most appropriate development conditions determined by the development conditions such as the type of the developing liquid, the imaging temperature, and the development time. The most suitable development conditions are generally the use of an alkali photographic solution of Ρ Η 1 1 to 14 at a temperature of 25. (: Conditions of immersion for 0.5 to 3 minutes. <Image Forming Material (A) and Image Forming Material (Β)> The negative blue-violet laser photosensitive composition of the present invention can be used to form the negative blue-violet laser photosensitive image forming material of the present invention. (A) (hereinafter sometimes referred to simply as image forming material (A)). The image forming material (a) is usually obtained by dissolving or dispersing the above-mentioned respective components in a coating liquid of a suitable solvent, and then applying it on the dummy support film, after drying, if necessary, covering with a coating film to form a photosensitive property. Formed on the surface of the composition layer. Such an image forming material (A) is, for example, a dry film resist material or the like. The above image forming material (A) can be used to form the negative blue-violet laser-sensitive image forming material (B) of the present invention (hereinafter sometimes referred to simply as image-69-(66) 1354864 forming material (B) ). The image forming material (B) usually has two types of methods. When the photosensitive composition of the image forming material (A) is covered with a coating film, the coating film is peeled off and laminated to be processed. The other system is produced in the following order (1) to (3). 1) The components of the negative blue-violet laser photosensitive composition are dispersed in a suitable solvent to form a coating liquid. (2) Directly coated on a substrate and then dried. (3) A layer of the present-type blue-violet laser photosensitive composition is formed on the substrate to be processed. The image forming material (B) is applied to the following image forming mode. The image forming material (B) is subjected to scanning exposure at a wavelength of 390 to 43 Onm, and subjected to development processing to form an image. As the image forming material (A) of a dry film photoresist material or the like, the pseudo support film is, for example, a polyethylene terephthalate film, a poly(ethylene terephthalamide film), a polypropylene film, or a polystyrene film. When it is known that these have the required agent properties or heat resistance when the image forming material (A) is produced, the photosensitive composition can be directly applied onto the dummy support film. Image shape of the invention (A) 'The solvent resistance or heat resistance of these films is poor, and the layer can be formed on a film-forming composition layer having a release property such as a polytetrafluoroethylene film or a release film. A false support film such as solvent resistance or heat resistance is laminated thereon. Thereafter, the release film is peeled off to form an image forming material (A). In addition, the high resolution is particularly sought to support the film haze (Haze) 値 ideally 〇. 〇1~].8%, and the false thickness is ideally 10~30μπι. The fabrication layer is made on the substrate side. (Soluble method of dissolving or being processed by the negative method. The amine film and film for laser light replacement) are coated with a solution, for example, when the invention is poorly sensitized, the false support film -70-(67)(67)1354864 The solvent to be used in the coating liquid is not particularly limited as long as it has sufficient solubility for the component to be used and can impart good coating properties, and examples thereof include methyl cellosolve, ethyl solvent, and methyl cellosolve. Soluble solvent such as acetate, ethyl cellosolve acetate; propylene glycol monomethyl ether, propylene glycol monoacetic acid, propylene glycol monobutyl ether 'propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, propylene glycol single Propylene glycol solvent such as butyl ether acetate or dipropylene glycol dimethyl ether; butyl acetate, amyl acetate, ethyl butyrate, butyl butyrate, dimethyl oxalate, ethyl pyruvate, ethyl-2 - an ester solvent such as hydroxybutyrate, ethyl acetoacetate, methyl lactate, ethyl lactate or methyl 3-methoxypropionate; an alcohol such as heptanol, hexanol 'diacetone alcohol or decyl alcohol Solvent; ketone solvent such as cyclohexanone or methylpentanone; dimethylformamide, dimethyl a highly polar solvent such as acetamide or N-methylpyrrolidone or a mixed solvent thereof, and an aromatic hydrocarbon may be added to these solvents, etc. The amount of the solvent used is usually from 1 to 20 by weight based on the total amount of the photosensitive composition. The coating method may be a known method, such as rotary coating, steel brush coating, spray coating, dip coating, air force coating, roller coating, blade coating, sieve coating, and the like. A method of coating a curtain, etc. The coating amount is preferably from the viewpoint of image formation described later and subsequent processing such as etching or plating, and the dry thickness is preferably Ο.ίμηι or more 'more preferably lOpm or more, and From the viewpoint of sensitivity, it is preferably 200 μm or less, more preferably 1 〇〇μηι or less. The temperature of the drying medium used at this time is, for example, 30 to 150 ° C, preferably 40 to 110 ° C, The drying time is, for example, 5 seconds to 60 minutes, preferably 1 second to 3 minutes. In addition, when the resolution is obtained, the surface roughness of the coating film and the contact surface of the photosensitive composition are Ra 〇" 5μιη Hereinafter, Rmax is -71 - (68) 1354864, and the diameter of the coating film is 80 μm. The above /m2 or less is preferable. It can be used as an image test of a dry film photoresist material or the like, and the image forming material (A) is laminated on the surface of the photosensitive composition layer to be covered with a coating film to be polyethylene. When the film, the polypropylene film, and the polytetrafluoroethylene film are covered with the photosensitive film of the image forming material (A), the coating film is peeled off, and the photosensitive composition coating liquid is directly applied or dried. The substrate to be processed (B) is subjected to exposure by exposure of a photosensitive composition layer of Ray, and a developed image is used as a photoresist, and a pattern such as a circuit or an electrode is formed by etching or plating, for example, Copper 'zinc, tin, lead, nickel and other metal plates. Generally can be made of polyimide resin, bismaleimide resin, non-phenol resin, melamine resin and other thermosetting resin; carbonate resin 'poly resin, acrylic Resin, vinyl resin, polyvinyl chloride resin, polyolefin resin resin, etc.; inorganic materials such as paper, glass, alumina, and calcium carbonate; or glass cloth substrate epoxy resin, paper substrate epoxy resin Paper-based materials The thickness is 0.02 to 10 mm, and the metal foil such as the metal or the metal oxide such as indium oxide or tin oxide is heated or laminated, or the number of fish eyes used is 5 pieces of material (A). Preferably, the film is formed, and the film can be made into a known film. The side of the composition layer is laminated by pressurization or the like, and the process of forming the above-described light of the present invention is performed, and the resulting negative-form work can be used on its surface, inscriptions, gold, silver, and for example, rings. Composite materials such as oxy-resin, saturated polyester resin, benzene saturated polyester resin, polyacrylamide resin, polyphenylene, fluororesin, etc., on the surface of composite support such as thermoplastic yttrium oxide, barium sulfate, grease, glass non-woven phenol resin Tin, indium oxide doped oxygen sputtering, evaporation, electroplating -72- (69) (69) I354864 and other methods for treating metals, etc., forming a metal laminate of a conductive layer having a thickness of 1 to 100 μm. When the photosensitive composition coating liquid is directly applied and dried to produce the image forming material of the present invention, the photosensitive composition layer formed on the substrate to be processed can be formed to prevent the cause An oxygen blocking layer for suppressing polymerization of oxygen of the photosensitive composition, or a protective layer for adjusting a light transmittance adjusting layer such as a wavelength range of sensitivity. The oxygen blocking layer which is constituting the oxygen barrier layer, for example, is soluble in water or a mixed solvent of water and a water-miscible organic solvent such as an alcohol or tetrahydrofuran, and specifically, for example, polyvinyl alcohol and a part thereof acetalized product thereof a cationically modified product such as a quaternary ammonium salt or a derivative such as an anionic modified product such as sodium sulfonate, such as polyvinylpyrrolidone, polyethylene oxide, methylcellulose, carboxymethylcellulose, or hydroxyethylcellulose. , hydroxypropyl cellulose, and the like. Among them, polyvinyl alcohol and its derivatives are preferred from the viewpoints of oxygen barrier properties, etc., and from the viewpoint of adhesion to a photosensitive composition, etc., polyvinylpyrrolidone or vinylpyrrolidone-vinyl acetate copolymerization is preferred. A vinylpyrrolidone polymer such as a substance. The oxygen barrier layer is preferably a mixture of 1 to 20 parts by weight, preferably 3 to 15 parts by weight, based on the weight of the polyvinyl alcohol or its derivative, of the polyvinylpyrrolidone polymer. The oxygen barrier layer preferably contains an organic acid such as succinic acid or an organic acid salt such as ethylene-amine tetraacetic acid, and may contain a nonionic such as polyethylene oxide alkyl phenyl ether or the like. A surfactant such as an anionic or alkyltrimethylammonium chloride such as an alkylbenzenesulfonate, a defoaming agent, a coloring matter, a plasticizer, a cerium adjusting agent, or the like. These total contents are preferably -73 - (70) (70) 1,354,864% by weight or less, more preferably 5% by weight or less. The oxygen barrier layer is formed by the same coating method as the above-mentioned photosensitive photo-composition layer in the form of a solution of water or a mixed solvent of water and a mixed organic solvent, and the coating amount is a dry film thickness of 1 to L〇g/m2, more preferably 1.5 to 7 g/m2. In the light-transmitting property-adjusting layer, the polymer binder contains a light-absorbing pigment in the visible light region such as a coumarin dye, and in this case, the polymer binder is polyvinyl alcohol exemplified as the oxygen barrier layer or The derivative or the polyvinylpyrrolidone polymer can form a protective layer having oxygen blocking energy and light transmittance adjusting energy. The image forming material (B) having the blue-violet laser photosensitive composition layer of the present invention on the substrate to be processed has a photosensitive composition layer composed of the negative photosensitive composition (N!) In this case, in order to have a residual film ratio-exposure amount characteristic or the above-described developing speed-exposure amount characteristic, a polymerization inhibitor of the negative photosensitive composition (N i ) constituting the photosensitive composition layer is used. The content is preferably from 5 to 60 ppm, and the lower limit of the polymerization inhibitor content is preferably 10 ppm and the upper limit is 50 ppm. <Image Forming Method> The image forming material (B) of the present invention having the blue-violet laser photosensitive composition layer of the present invention on the substrate to be processed is formed by the image forming material (A) In the case of constituting the material layer, after the dummy support film is peeled off, or the photosensitive composition coating liquid is directly applied, and the photosensitive composition layer is dried to form a photosensitive composition layer, when the protective layer is removed, the protective layer is peeled off. Sense-74-(71) (71)1354864 The optical composition layer is subjected to scanning exposure by using laser light as an exposure light source, and then subjected to development processing to form a negative image on the substrate to be processed. The laser exposure light source is, for example, a HeNe laser, an argon ion laser, a YAG laser, a HeCd laser, a semiconductor laser, a ruby laser, etc., and is particularly preferably a laser light that generates a blue-violet range of a wavelength range of 390 to 430 nm. The light source 'is not particularly limited, and is specifically, for example, an indium gallium nitride semiconductor laser which generates a vibration edge of 4 10 nm. The scanning exposure method of the laser light source is not particularly limited, for example, a plane scanning exposure mode, an outer drum scanning exposure mode, an inner drum scanning exposure mode, etc., and the laser output light intensity is preferably 1 to 100 mW. More preferably, it is 3 to 70 mW, and the oscillation wavelength is preferably 3 90 to 430 nm, more preferably 400 to 420 nm, and the electron beam spot diameter is preferably 〇5 to 30 μm, more preferably 1 to 20 μm, and the scanning speed is better. The scanning density is 50 to 500 m/sec, more preferably 1 to 400 m/sec, and the scanning density is preferably 2,000 dpi or more, more preferably 4,000 dpi or more. The development processing after the above laser scanning exposure is preferably carried out using an aqueous developing solution containing a base component and a surfactant. The alkali component is, for example, sodium citrate, potassium citrate, lithium niobate, ammonium citrate, sodium metasilicate, potassium metasilicate, sodium hydroxide, potassium hydroxide, lithium hydroxide, sodium carbonate, sodium hydrogencarbonate, Inorganic alkali salt such as potassium carbonate, sodium diphosphate, sodium tripolyphosphate, second o-acid, third peat, sodium borate, potassium borate, ammonium borate; monomethylamine, dimethylamine, trimethylamine, single Organic amine compounds such as ethylamine, diethylamine, triethylamine, monoisopropylamine, diisopropylamine, monobutylamine, monoethanolamine, diethanolamine, triethanolamine, monoisopropanolamine, diisopropanolamine, etc. The concentration used is 0.1 to 5 -75- (72) (72) 1354864% by weight. The above surfactant is, for example, the same surfactant as that of the above-mentioned photosensitive composition. Among them, a nonionic, anionic or amphoteric surfactant is preferred, and a betaine-type compound of an amphoteric surfactant is particularly preferred. The surfactant is preferably used in a concentration of 0.0001 to 20% by weight, more preferably 0.0005 to 10% by weight, particularly preferably 0.001 to 5% by weight. If necessary, the developing solution may contain, for example, isopropanol or benzyl alcohol. , ethyl cellosolve, butyl cellosolve 'phenyl cellosolve, two diol, diacetone alcohol and other organic solvents. Further, the pH of the developing liquid is preferably from 9 to 14 , more preferably from 1 1 to 14. The development is generally performed by immersing the image forming material in the above-described developing solution or spraying the developing liquid onto the image forming material, such as from 1 Torr to 50 ° C, more preferably The temperature is 15 to 4 5 °c for 5 seconds to 10 minutes. After the development process, the negative image formed is irradiated with a light source such as a high pressure mercury lamp or/and heat-treated at a temperature of, for example, 140 to 160 ° C to improve the resistance of the photoresist. [Embodiment] [Embodiment] Hereinafter, the present invention will be more specifically described by way of Examples, and the present invention is not limited to the embodiments described below. Example 1 to 2, Comparative Example 1 -76- (73) (73) 1354864 The following sensitizers (1) to (6) 'ethylenically unsaturated compound (1), photopolymerization initiator (1), The alkali-soluble resin (1) to (2) and the other components (1) to (3) are added to 100 parts by weight of a mixed solvent of methyl ethyl ketone/isopropanol (weight ratio: 8/2) according to the formulation of Table 1. The coating liquid was prepared by mixing at room temperature. The coating liquid was applied onto a pseudo support film of polyethylene terephthalate (thickness: 19 μm) in an amount of 20 μm by using an applicator, and dried in an oven at 90 °C. A negative blue-violet laser-sensitive image forming material was prepared by forming a negative-type photosensitive composition (N!) layer of a polyethylene film (thickness 25 μmη) of the laminated film (><sensitizer> (1) The following compounds (maximum absorption of 3 6 5 nm / compound contained in the former # stomach)) (2) Compounds of the following compounds (maximum absorption of 3 86 nm / contained in the aforementioned θ ΙΠ) (3) The following compounds (maximum absorption of 3 89 nm / compound contained in the aforementioned stomach XI)) (4) The following compounds (maximum absorption of 3 78 nm / compound contained in the aforementioned gastric fistula) (5) The following compounds ( Maximum absorption of 4l4nm / compound contained in the former ruthenium) (6) The following compounds (maximum absorption of 3 65nm / compound contained in the former stomach XII) -77- (74)1354864

/C2H5 N 、C2H5/C2H5 N , C2H5

-78- 1354864-78- 1354864

-79- (76)1354864 &lt;乙烯性不飽和化合物&gt; 之對 (1 )下述化合物(含有2500ppm之聚合抑制劑 甲氧基苯酚,新中村化學製藥r BPE-500」) (1) CH2=C-J-〇(cH2CH20^〈^~|—^^~C&gt;|CH2CH2〇)^-i=CH2 0 CH3 0 π^η=10 &lt;光聚合引發劑&gt; 基聯 ,在 (1) 2,2,-雙(鄰氯苯基)-4,4,,5,5,-四苯 二咪唑(熔點1 7 2 °C,波長1 ·5 4 Α之X線折射光譜中 布雷格角(20±〇.2°)21.16。具有最大折射波峰) &lt;鹼可溶性樹脂&gt; 酸酯 烯酸 mg/g 劑之 (1)苯乙烯/ (甲基)丙烯酸酯/正丁基甲基丙烯 /2-乙基己基丙烯酸酯/2-羥乙基甲基丙烯酸酯/甲基丙 共聚物(莫耳比 10/35/10/10/15/20,酸價 144KOH· ,重量平均分子量62,300,不添加聚合抑制劑)。 (2 )同上共聚物(但是添加5 00PPm之聚合抑制 對甲氧基苯酚) &lt;其他&gt; (1 )無色結晶紫色試劑 (2 )結晶紫色試劑 (3)對甲氧基苯酚(追加部分) -80- (77) (77)1354864 另外’將黏貼厚35μηι之銅箔之聚醯亞胺樹脂之貼銅 層合基板(厚1.5mm,大小250mmx200mm)的銅箔表面 使用住友3M公司製「Scotch blide SF」進行磨光軸硏磨 、水洗後’以空氣流乾燥、整理表面。接著以6 0它之烤箱 預熱後,將上述製作之負型藍紫色雷射感光性圖像形成材 料(A)之聚乙烯薄膜剝離,同時該剝離面使用手動式滾 軸層壓機以輕溫度100°C、輕壓0.3MPa、層壓速度1.5m/ 分進行層壓於該貼銅層合板之銅箔上,製造在貼銅層合基 板上形成負型感光性組成物(N,)層之負型藍紫色雷射感 光性圖像形成材(B )。 對於製得之各負型藍紫色雷射感光性圖像形成材(B )之感光性組成物(N】)層之聚合抑制劑之含量係以下述 方法,藉由氣相色譜測定,結果如表1所示。 &lt;聚合抑制劑之含量測定&gt; 對於對甲氧基苯酚之丙酮標準溶液(各〇,1,3,]0 ’ 2 0,5 0 p p m )由下述條件之氣相色譜之測定値製作檢量 線。另外,將光阻圖像形成材(B )之感光性組成物層溶 解於丙酮中,對於調製之10重量%溶液係由下述條件之 氣相色譜之測定値進行定量。 &lt;條件&gt;-79-(76)1354864 &lt;Ethylene unsaturated compound&gt; Pair (1) The following compound (containing 2500 ppm of polymerization inhibitor methoxyphenol, Xinzhongcun Chemical Pharmaceuticals r BPE-500) (1) CH2 =CJ-〇(cH2CH20^<^~|—^^~C&gt;|CH2CH2〇)^-i=CH2 0 CH3 0 π^η=10 &lt;Photopolymerization Initiator&gt; Base, at (1) 2 , 2,-bis(o-chlorophenyl)-4,4,5,5,-tetraphenyldiimidazole (melting point 172 ° C, wavelength 1 · 5 4 Α X-ray refractive spectrum in the Bragg angle ( 20±〇.2°) 21.16. with maximum refraction peak) &lt;alkali-soluble resin&gt; (1) styrene/(meth)acrylate/n-butylmethylpropene/2- Ethylhexyl acrylate/2-hydroxyethyl methacrylate/methyl propylene copolymer (Morby 10/35/10/10/15/20, acid value 144 KOH·, weight average molecular weight 62,300, no Add polymerization inhibitor). (2) Copolymer as above (but polymerization of 500 MPa is added to inhibit p-methoxyphenol) &lt;Others&gt; (1) Colorless crystal violet reagent (2) Crystal violet reagent (3) p-methoxyphenol (additional portion) -80- (77) (77)1354864 In addition, the surface of the copper foil of the copper-clad laminate (thickness 1.5 mm, size 250 mm x 200 mm) of the polyimide foil coated with a 35 μm thick copper foil was used by Sumitomo 3M Co., Ltd. "Scotch" Blide SF" is polished by a sanding shaft and washed with water to dry the air stream and finish the surface. Then, after preheating in the oven of 60, the polyethylene film of the negative blue-violet laser photosensitive image forming material (A) produced above was peeled off, and the peeling surface was lightly used using a manual roller laminator. The film was laminated on the copper foil of the copper-clad laminate by a temperature of 100 ° C, a light pressure of 0.3 MPa, and a lamination speed of 1.5 m/min to produce a negative photosensitive composition (N,) on the copper-clad laminate substrate. A negative blue-violet laser photosensitive image forming material (B) of the layer. The content of the polymerization inhibitor of the photosensitive composition (N) layer of each of the negative blue-violet laser-sensitized image-forming material (B) obtained was determined by gas chromatography as follows. Table 1 shows. &lt;Measurement of Content of Polymerization Inhibitor&gt; The acetone standard solution of p-methoxyphenol (each 〇, 1, 3, 0' 2 0, 50 ppm) was determined by gas chromatography of the following conditions. Check line. Further, the photosensitive composition layer of the resist image forming material (B) was dissolved in acetone, and the prepared 10 wt% solution was quantified by gas chromatography as described below under the following conditions. &lt;conditions&gt;

Clumn : HP-5 ( 0.32mmI.D.x30m d_f.0.25pm) 載體;He 2.0mL/min -81 - (78) 1354864Clumn: HP-5 (0.32mmI.D.x30m d_f.0.25pm) carrier; He 2.0mL/min -81 - (78) 1354864

分離比;1 /1 Ο 注入口; 2 5 0 °C 檢知器;FID 320 °C 供相,5〇C-2〇C/rnin-300°C ( lOrnin) 注入量;10重量%丙酮溶液 對於製得之各負型藍紫色雷射感光性圖' )之感光性組成物層係以下述方法測定終點J 9 0 %以上之最小曝光量,結果如表1所示。 &lt;終點&gt; 製得之圖像形成材之感光性組成物層在牙 ,測定以〇.15Mpa噴吹顯像液用之25°C之〇. 鈉水溶液,直到組成物層完全溶解爲止的時間 &lt;最小曝光量&gt; 使用中心波長4〇5nm、雷射輸出力5mW (日亞化學工業公司製「NLHV500C」), 2mW、電子束光點徑 20μηι,且改變電子束捐 描速度,對製得之圖像形成材(Β)之感光哲 行掃描曝光。接著以〇.1 5Mpa噴吹顯像液用二 重量%碳酸鈉水溶液,並以終點1 . 5倍的時帛 像,使產生 〇.5mmx〇.5mm的測試圖像’各掃 計算使用 Keteretencol 公司製「Alpha-Step 膜厚計算之殘膜率成爲90%之曝光量。 :形成材(B 殘膜率成爲 ^曝光狀態下 7重量%碳酸 之雷射光源 以像面照度 ϊ描間隔及掃 :組成物層進 L 25°C 之 0.7 §進行噴霧顯 ¥描條件下, 5〇〇」測定之 -82- (79) (79)U54864 由前述所得之曝光量及殘膜率,計算前述式(1)之γ 値及前述式(2)之α値,結果如表1所示。 &lt; γ値、α値〉 由前述所得之曝光量及殘膜率,製作殘膜率〔t(% }〕對曝光量之對數〔l〇gE ( mJ/cm2 )〕所描繪之殘膜 率-曝光量曲線,由連結殘膜率之15%的點與80%的點 ^γ1ο8Ε + δ的公式(參照圖1 )算出γ値。製作由前述所得 之殘膜率所算出之溶解膜率〔1 〇〇- t ( % )〕被顯像時間 〔T ( sec )〕除之顯像速度〔s={100-t}/T ( % /sec )〕所 插繪之顯像速度-曝光量曲線,連結最大顯像速度80%的 點與2〇%的點s = -alogE+p的公式(參照圖2)算出α値 ’結果如表1所示。 另外,對製得之圖像形成材(Β )之感光性組成物層 以下述的方法評估分光感度之極大波峰、波長410nm之可 形成圖像之最小曝光量[S4io(m.J/cm2)]對波長450nm之 可形成圖像之最小曝光量[S450 ( mJ/cm2)]的比[S410/S450] 及黃色燈下之安全燈特性,結果如表1所示。 &lt;分光感度之極大波峰&gt; 將圖像形成材(B)切成50mm x60mm之樣品,使用 折射分光照射裝置(Narumy公司製「RM-23」)由氙燈( 牛尾電機公司製「UI-50〗C」)爲光源,設定以3 5 0至 650nm波長範圍所分光的光依橫軸方向曝光波長爲直線變 -83- (80) (80)^354864 化,對於縱軸方向曝光強度呈對數變化,經1 〇秒照射曝 光。接著以〇.15Mpa噴吹顯像液用之25°C之0.7重量%碳 酸鈉水溶液,並以終點1 . 5倍的時間進行噴霧顯像,可得 到對應各曝光波長之感度的圖像。由該圖像之高度算出可 形成圖像之曝光能,讀取以橫軸爲波長,縱軸爲該曝光能 之倒數描繪所得之分光感度曲線的極大波峰。 &lt; [S41〇/S45〇]&gt; 同上述方法得到在3 5 0至650nm之波長範圍使波長變 化,進行曝光、顯像時之波長4 1 〇nm之可形成圖像之最小 曝光量[S41〇(mJ/cm2)]及波長450nm之可形成圖像之最 小曝光量[S45〇 ( mJ/cm2 )],計算其比値[S41G/S45()],以下 列標準評估。 A: S410/S45Q 爲 〇.〇3 以下。 B: S410/S450 超過 〇·〇3 且 0.05 以下。 C: S410/S450 超過 〇_〇5 且 0.1 以下。 D: S410/S45Q 超過 〇·1 。 &lt;黃色燈下之安全性〉 將圖像形成材(Β )分別放置於黃色照明燈(遮斷約 4 7 Onm以下之波長光線的條件)下1分鐘、2分鐘、5分 鐘、10分鐘、20分鐘、30分鐘後,同上述進行掃描曝光 及顯像處理,求得與前述比較,圖像產生變化爲止的放置 時間,以下列標準評估。 -84- (81) (81)1354864 A:20分鐘以上。 B:10分鐘以上,未達20分鐘。 C:1分鐘以上,未達10分鐘。 D:未達1分鐘。 對於製得之圖像形成材(B )之感光性組成物層,以 下述的方法評估解像性及矩形性,結果如表1所示。 &lt;解像性&gt; 使用中心波長405nm'雷射輸出力5mw之雷射光源 (日亞化學工業公司製「NLHV500C」),以像面照度2 mW、電子束光點徑20μιη,且改變電子束掃描間隔及掃描 速度’對製得之圖像形成材(Β )之感光性組成物層進行 掃描曝光。接著以〇.15Mpa噴吹顯像液用之25°C之0.7重 量%碳酸鈉水溶液,並以終點1 · 5倍的時間進行噴霧顯像 ,使產生寬度20μπι、長度0.2cm之線以20μιη間隔20條 排列的圖像,此時之圖像線寬之再現性以下述標準評估。 〇:可再現20μηι之線寬。 X :線寬大於20μιη或小於20μπι。 &lt;矩形性&gt; 與解像性相同,產生寬度20μπι、長度0.2cm之線以 20 μΐη間隔20條排列的圖像,此時之圖像線之尖銳度以下 述標準評估。 〇:角度尖銳的矩形,未有拉引現象。 -85- (82) 1354864 x:角略帶圓形,或梯形,或有拉引現象。 比較例2〜3 使用市售之A公司製乾膜光阻材(高感度型式)及B 公司製乾膜光阻材(高解像度型式),與前述相同製造光 阻圖像形成材(B ),同樣評估,同列於表1。 -86- 1354864Separation ratio; 1 /1 Ο injection inlet; 2 5 0 °C detector; FID 320 °C supply phase, 5〇C-2〇C/rnin-300°C ( lOrnin) injection amount; 10% by weight acetone solution The photosensitive composition layer of each of the obtained negative blue-violet laser photosensitivity patterns ') was measured for the minimum exposure amount of the end point J 9 0 % or more by the following method, and the results are shown in Table 1. &lt;End point&gt; The photosensitive composition layer of the image forming material obtained was measured at 25 ° C for spraying a developing solution at M15 Mpa. The sodium aqueous solution was until the composition layer was completely dissolved. Time &lt;minimum exposure amount&gt; The center wavelength is 4〇5 nm, the laser output force is 5 mW ("NLHV500C" manufactured by Nichia Corporation), 2 mW, electron beam spot diameter 20 μηι, and the electron beam donating speed is changed, The obtained image forming material (Β) is scanned and exposed. Then, using 二.1 5Mpa to spray the developing solution with a 2% by weight sodium carbonate aqueous solution, and taking the end point of 1.5 times, the test image of 〇.5mmx〇.5mm was generated. Each scan was calculated using Keteretencol. "The residual film ratio of the Alpha-Step film thickness is 90% of the exposure amount. : The formed material (B residual film rate becomes 7.5% by weight of the laser light source in the exposure state, and the scanning interval is scanned by the image illuminance: The composition layer is 0.7 at 25 ° C. § Under the conditions of spray display, 5 〇〇 测定 - 82 - (79) (79) U54864 From the above-mentioned exposure amount and residual film rate, calculate the above formula ( 1) γ 値 and α 値 of the above formula (2), and the results are shown in Table 1. &lt; γ 値, α 値 > The residual film rate was obtained from the exposure amount and residual film ratio obtained above [t (% } The residual film rate-exposure curve plotted against the logarithm of the exposure amount [l〇gE (mJ/cm2)] is defined by the point connecting the residual film rate of 15% and the 80% point ^γ1ο8Ε + δ (refer to Fig. 1) Calculate γ 値. The dissolution rate (1 〇〇 - t ( % )) calculated from the residual film ratio obtained above is divided by the development time [T ( sec )] [s={100-t}/T (% /sec)] The development speed-exposure curve of the plot, the point connecting the maximum imaging speed of 80% and the point of 2〇% s = -alogE+p The result of calculating the α値' by the formula (see Fig. 2) is shown in Table 1. In addition, the photosensitive composition layer of the obtained image forming material (Β) was evaluated by the following method for the maximum peak of the spectral sensitivity and the wavelength of 410 nm. The ratio of the minimum exposure amount of the image [S4io(mJ/cm2)] to the minimum exposure amount of the image at 450 nm [S450 (mJ/cm2)] [S410/S450] and the safety light under the yellow lamp The results are as shown in Table 1. &lt;Maximum peak of spectral sensitivity&gt; The image forming material (B) was cut into a sample of 50 mm x 60 mm, and a refracting spectroscopic irradiation device ("RM-23" manufactured by Narumy Co., Ltd.) was used. ("UI-50〗 C" manufactured by Niumei Electric Co., Ltd.) is a light source, and the light split by the wavelength range of 305 to 650 nm is set to be linear in the horizontal axis. -83-(80) (80)^354864 For the longitudinal direction, the exposure intensity is logarithmicly changed, and the exposure is irradiated by 1 〇 second. Then, the sodium sulphate of 0.7% by weight at 25 ° C is sprayed with 〇.15 Mpa. The aqueous solution is spray-developed at a time of 1.5 times, and an image corresponding to the sensitivity of each exposure wavelength can be obtained. The exposure energy of the image can be calculated from the height of the image, and the horizontal axis is read as the wavelength. The vertical axis is the maximum peak of the spectral sensitivity curve obtained by the reciprocal of the exposure energy. &lt;[S41〇/S45〇]&gt; With the above method, the wavelength is changed in the wavelength range of 350 to 650 nm, and the minimum exposure amount of the image which can be formed at the wavelength of 4 1 〇 nm at the time of exposure and development [ The minimum exposure amount [S45〇(mJ/cm2)] of S41〇(mJ/cm2)] and the wavelength of 450nm can be formed, and the ratio [S41G/S45()] is calculated and evaluated by the following criteria. A: S410/S45Q is 〇.〇3 or less. B: S410/S450 exceeds 〇·〇3 and is 0.05 or less. C: S410/S450 is more than 〇_〇5 and less than 0.1. D: S410/S45Q exceeds 〇·1. &lt;Safety under yellow light> The image forming material (Β) is placed in a yellow light (conditions for blocking wavelength light of about 47 nm or less) for 1 minute, 2 minutes, 5 minutes, 10 minutes, After 20 minutes and 30 minutes, scanning exposure and development processing were performed as described above, and the time until the image was changed was compared with the above, and evaluated by the following criteria. -84- (81) (81) 1354864 A: 20 minutes or more. B: 10 minutes or more, less than 20 minutes. C: 1 minute or more, less than 10 minutes. D: Less than 1 minute. With respect to the photosensitive composition layer of the obtained image-forming material (B), the resolution and the squareness were evaluated by the following methods, and the results are shown in Table 1. &lt;Resolving property&gt; A laser light source ("NLHV500C" manufactured by Nichia Chemical Industry Co., Ltd.) having a center wavelength of 405 nm' laser output of 5 mW was used, and the image illuminance was 2 mW, the electron beam spot diameter was 20 μm, and the electrons were changed. The beam scanning interval and the scanning speed 'scan and expose the photosensitive composition layer of the obtained image forming material (Β). Then, a 0.7% by weight sodium carbonate aqueous solution at 25 ° C for 15 ° C was sprayed with 〇.15 Mpa, and spray development was performed at a time point of 1.5 times, so that a line having a width of 20 μm and a length of 0.2 cm was formed at intervals of 20 μm. The 20 arranged images, at which time the reproducibility of the image line width is evaluated by the following criteria. 〇: The line width of 20μηι can be reproduced. X: The line width is greater than 20 μm or less than 20 μm. &lt;Rectangularity&gt; As with the resolution, an image having a line width of 20 μm and a length of 0.2 cm arranged at intervals of 20 μΐ is generated, and the sharpness of the image line at this time is evaluated by the following criteria. 〇: A sharp angled rectangle with no pull. -85- (82) 1354864 x: The angle is slightly rounded, or trapezoidal, or has a pull-up phenomenon. Comparative Examples 2 to 3 Using a commercially available dry film resist material (high sensitivity type) manufactured by Company A and a dry film resist material (high resolution type) manufactured by Company B, the photoresist image forming material (B) was produced in the same manner as described above. The same assessment is shown in Table 1. -86- 1354864

Is ¾¾ 呆_ li」«ia 〇〇 V V sse 9IOOII OICNI 0.0s ΥΙΙΙ0Γ---Ι £1Is 3⁄43⁄4 Stay _ li"«ia 〇〇 V V sse 9IOOII OICNI 0.0s ΥΙΙΙ0Γ---Ι £1

—i K X X V V Isle UL ss.e oe L-9 vllloll -^ 1¾ - ^ 1¾ - ^ 1¾ _ ^1,¾1谳 §—i K X X V V Isle UL ss.e oe L-9 vllloll -^ 13⁄4 - ^ 13⁄4 - ^ 13⁄4 _ ^1,3⁄41谳 §

OS § §OS § §

OS 〇s 0寸 oeOS 〇s 0 inch oe

OS 寸 oe oe X〇 V V 06e 10011 nm § §·0 g.o § 〇〇 V V Q6ICOI SI 荽·9 ICNIlool OIOJI I— so § 〇〇 V V g寸 寸,寸I m un 8·寸 Qlojl ΟΙΟΌ SO £s ^ 〇ςOS inch oe oe X〇VV 06e 10011 nm § §·0 go § 〇〇VV Q6ICOI SI 荽·9 ICNIlool OIOJI I- so § 〇〇VV g inch inch, inch I m un 8 inch Qlojl ΟΙΟΌ SO £s ^ 〇 ς

寸 &quot;5F 〇〇 V V ς〇寸 ί·ιζ I SICNI —Ml OIOJI SQOI s.o § 〇〇 V V 〇Q寸 m 11.9 1^1 寸·e un ΟΙΟΌ i § 〇〇 V V ΙΟΟΙ6ΙΓΟΙ Q.el 9//寸 un L-9 Qlcsl ΟΙΟΌ s.o es i— § 0寸 〇〇 V V I.6T nm un L-9 QS ΙΟΟΌ SO § § Βΐϋΐ Η Ν /-\ /·&quot;-\ /-&quot;-Ν /·*&quot;·\ Η OJ CO 寸 νο fi®^^ 1M _1 _蒙ii-lM lgls〕/F§I (su)螌駕1-KI圍ηνιμιτ§1ι^ι1φι g} iphNISK (loll X) IMNSml (羞 動 Qjfm) 1 _·1· §__)(0 §_s)e (φ}_ϋ)ω_蠢 §_βδι laigxl) ^1—a lallgwlXI) 匿粼 lIrLnlKnl酸朱 M m -87- (84) (84)1354864 產業上之利用性 本發明之負型藍紫色雷射感光性組成物及使用該組成 物之圖像形成材料(A)、圖像形成材(B )及圖像形成方 法可用於形成印刷配線板、液晶顯示元件、電漿顯示器、 大規模集成電路、薄型電晶體、半導體封裝、彩色濾光片 、有機電致發光元件等之導體電路或電極加工基板等之蝕 刻或電鍍光阻等,特別是適用於波長3 90至4 3 0nm之藍紫 色雷射光之直接描繪。 本發明之說明書之揭示係引用本案主張優先權之基礎 案日本專利案2003-332626號(2003年9月25日申請) 及日本專利案2003-344636號(2003年10月2日申請) 之全說明書的內容。 【圖式簡單說明】 圖1係本發明之實施例1〜2及比較例1〜3之藍紫色 雷射感光性組成物之殘膜率-曝光量曲線。 圖2係本發明之實施例1〜2及比較例1〜3之藍紫色 雷射感光性組成物之顯像速度-曝光量曲線。 -88-Inch&quot;5F 〇〇VV ς〇 inch ί·ιζ I SICNI —Ml OIOJI SQOI so § 〇〇VV 〇Q inch m 11.9 1^1 inch·e un ΟΙΟΌ i § 〇〇VV ΙΟΟΙ6ΙΓΟΙ Q.el 9//inch Un L-9 Qlcsl ΟΙΟΌ so es i— § 0 inch 〇〇VV I.6T nm un L-9 QS ΙΟΟΌ SO § § Βΐϋΐ Η Ν /-\ /·&quot;-\ /-&quot;-Ν /·* &quot;·\ Η OJ CO inch νο fi®^^ 1M _1 _Mongo ii-lM lgls〕/F§I (su)螌驾1-KI围 ηνιμιτ§1ι^ι1φι g} iphNISK (loll X) IMNSml (Shame Moving Qjfm) 1 _·1· §__)(0 §_s)e (φ}_ϋ)ω_Stupid §_βδι laigxl) ^1—a lallgwlXI) 粼lIrLnlKnl Acid Zhu M m -87- (84) (84 1354486 Industrial Applicability The negative blue-violet laser photosensitive composition of the present invention and the image forming material (A), the image forming material (B) and the image forming method using the same can be used for forming printing Etching or electroplating photoresist of a conductor circuit, an electrode processing substrate, or the like of a wiring board, a liquid crystal display element, a plasma display, a large-scale integrated circuit, a thin transistor, a semiconductor package, a color filter, an organic electroluminescence element, or the like, particular It is a direct depiction of blue-violet laser light with a wavelength of 3 90 to 4 30 nm. The disclosure of the specification of the present invention is based on the entire contents of the Japanese Patent Application No. 2003-332626 (filed on September 25, 2003) and Japanese Patent No. 2003-344636 (filed on October 2, 2003). The contents of the manual. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a graph showing the residual film ratio-exposure amount of the blue-violet laser photosensitive compositions of Examples 1 to 2 and Comparative Examples 1 to 3 of the present invention. Fig. 2 is a graph showing the development speed-exposure amount of the blue-violet laser photosensitive compositions of Examples 1 to 2 and Comparative Examples 1 to 3 of the present invention. -88-

Claims (1)

1354864 公告本 too. V:'&quot;2~2~1 萃为曰修正本I 第093128914號專利申請案中文申請專利範圍修正本 民國100年9月22日修正 十、申請專利範圍 1. 一種負型藍紫色雷射感光性組成物,其特徵係藉由 藍紫色雷射光之曝光,使殘膜率成爲90%以上之最小曝光 量爲40mJ/Cm2以下,曝光部之殘膜率〔t(%)〕對藍紫 色雷射光之曝光量之對數〔logE ( mJ/cm2 )〕進行描繪之 殘膜率-曝光量曲線中之殘膜率之15%的點與80%的點所 連結之下述式(1)之直線的γ値爲4.ΟχΙΟ2以上,其中增 感劑爲至少使用下述一般式(XII )表示之增感劑, t = 7logE + 6 ( 1 )1354864 Announcement this too. V: '&quot;2~2~1 Cui Wei 曰 Amendment I I Patent No. 093128914 Patent application Chinese patent application scope amendments Amendment of September 22, 100, the patent application scope 1. A negative The blue-violet laser photosensitive composition is characterized in that the minimum exposure amount of the residual film rate of 90% or more is 40 mJ/cm 2 or less by exposure of blue-violet laser light, and the residual film ratio of the exposed portion [t (%) )] The logarithm of the exposure amount of blue-violet laser light [logE (mJ/cm2)] is plotted as follows: the residual film rate-exposure curve is 15% of the residual film rate and the 80% point is connected to the following The γ 直线 of the straight line of the formula (1) is 4. ΟχΙΟ 2 or more, wherein the sensitizer is a sensitizer represented by at least the following general formula (XII), t = 7 logE + 6 ( 1 ) (—般式(XII )中,環D、E係以分別獨立爲以芳香族烴 環或芳香族雜環爲基本骨架者,環D與環E互相鍵結可形 成含有N的鍵結環,一般式(XII)中,連結基L係表示 含有芳香族烴環及/或芳香族雜環之連結基,連結基L與 N係以該芳香族烴環或芳香族雜環鍵結,η表示2以上之 整數,環D〜Ε及連結基L可具有取代基,這些取代基彼 此可互相鍵結形成環)。 2.—種負型藍紫色雷射感光性組成物,其特徵係藉由 藍紫色雷射光之曝光,使殘膜率成爲90%以上之最小曝光 1354864 量爲4〇mJ/cm2以下,由曝光部之殘膜率〔t(%)〕計算 所得之溶解膜率〔1〇〇· t(%)〕除以顯像時間〔T(sec )〕的顯像速度〔s={100-t}/T(%/sec)〕對藍紫色雷射 光之曝光量之對數〔logE ( mJ/cm2 )〕進行描繪之顯像速 度·曝光量曲線中之最大顯像速度之80%的點與20%的點 所連結之下述式(2)之直線的α値爲12以上,其中增感 劑爲至少使用下述一般式(XII )表示之增感劑, s = -alogE + p (2)(In the general formula (XII), the rings D and E are each independently an aromatic hydrocarbon ring or an aromatic heterocyclic ring, and the ring D and the ring E are bonded to each other to form a N-containing bonding ring. In the general formula (XII), the linking group L represents a linking group containing an aromatic hydrocarbon ring and/or an aromatic hetero ring, and the linking group L and the N group are bonded by the aromatic hydrocarbon ring or the aromatic heterocyclic ring, and η represents An integer of 2 or more, the ring D Ε and the linking group L may have a substituent which may be bonded to each other to form a ring). 2. A negative blue-violet laser photosensitive composition characterized by exposure of blue-violet laser light, so that the residual film rate becomes 90% or more, and the minimum exposure of 1354486 is 4〇mJ/cm2 or less. The residual film rate of the part [t(%)] is calculated by dividing the dissolution rate [1〇〇·t(%)] by the development time [T(sec)] [s={100-t} /T(%/sec)] Point to 20% of the maximum development speed in the development speed and exposure curve of the logarithm of the exposure amount of blue-violet laser light [logE (mJ/cm2)] and 20% The α値 of the straight line of the following formula (2) to which the point is connected is 12 or more, wherein the sensitizer is a sensitizer represented by at least the following general formula (XII), s = -alogE + p (2) (—般式(X11 )中,環D、E係以分別獨立爲以芳香族烴 環或芳香族雜環爲基本骨架者,環D與環E互相鍵結可形 成含有N的鍵結環,一般式(XII)中,連結基L係表示 • 含有芳香族烴環及/或芳香族雜環之連結基,連結基L與 N係以該芳香族烴環或芳香族雜環鍵結,n表示2以上之 整數,環D〜Ε及連結基L可具有取代基,這些取代基彼 此可互相鍵結形成環)。 3.如申請專利範圍第1或2項之負型藍紫色雷射感光 性組成物,其中感光性組成物含有作爲增感劑之330至 450nm之波長範圍內具有極大吸收的化合物。 4.如申請專利範圍第3項之負型藍紫色雷射感光性組 成物,其中在330至450 nm之波長範圍具有極大吸收的化 1354864 合物爲二烷胺基苯系化合物。 5·$α串請專利範圍第3項之負型藍紫色雷射感光性組 成物’其中在330至45 Onm之波長範圍具有極大吸收的化 合物爲下述一般式(XI)及(χπΙ)表示之增感劑中之至 少一種,(In the general formula (X11), the rings D and E are each independently an aromatic hydrocarbon ring or an aromatic heterocyclic ring as a basic skeleton, and the ring D and the ring E are bonded to each other to form a N-containing bonding ring. In the general formula (XII), the linking group L represents a linking group containing an aromatic hydrocarbon ring and/or an aromatic hetero ring, and the linking group L and the N group are bonded by the aromatic hydrocarbon ring or the aromatic heterocyclic ring, n An integer of 2 or more is represented, and the ring D Ε and the linking group L may have a substituent which may be bonded to each other to form a ring). 3. The negative blue-violet laser photosensitive composition according to claim 1 or 2, wherein the photosensitive composition contains a compound having a maximum absorption in a wavelength range of 330 to 450 nm as a sensitizer. 4. A negative blue-violet laser photosensitive composition according to claim 3, wherein the 1354864 compound having a maximum absorption in the wavelength range of 330 to 450 nm is a dialkylamino benzene compound. 5·$α string Please refer to the negative blue-violet laser photosensitive composition of item 3 of the patent range 'The compounds having a maximum absorption in the wavelength range of 330 to 45 Onm are represented by the following general formulas (XI) and (χπΙ) At least one of the sensitizers, (xm) (―般式(XI)及(XIII)中,環 A、B、C、F、G 係以分別獨立爲以芳香族烴環或芳香族雜環爲基本骨架者 ’環A與環8、環F與環g互相鍵結可形成含N的鍵結 環’—般式(XIII )中,R爲可具有取代基的烷基,環A 、B、C、F、G可具有取代基,這些取代基彼此可互相鍵 結形成環)。 6.如申請專利範圍第1或2項之負型藍紫色雷射感光 性組成物’其中環1)及E係分別獨立爲選自苯環、萘環、 蒽環、罪環、莫環、芴環、苊烯環及茚環之芳香族烴環, 或選自呋喃環、噻吩環、吡咯環、噁唑環、異噁唑環 '噻 -3- 1354864 唑環、異噻唑環、咪唑環、吡唑環、呋咱環、三唑環、吡 喃環、噻二唑環、噁二唑環、吡啶環、噠嗪環、嘧啶環及 吡嗪環之芳香族雜環爲基本骨架者,連結基L含有1個或 2個以上選自上述芳香族烴環及芳香族雜環的環,含有2 個以上之該環時,這些環係直接鍵結或經由2價以上之連 ' 結基來鍵結。 ' 7 .如申請專利範圍第5項之負型藍紫色雷射感光性組 φ 成物,其中環A〜G係分別獨立爲選自苯環、萘環、蒽環 、菲環、莫環、芴環、苊烯環及茚環之芳香族烴環,或選 自呋喃環、噻吩環、吡咯環、噁唑環、異噁唑環、噻唑環 、異噻唑環、咪唑環、吡唑環、呋咱環、三唑環、吡喃環 、噻二唑環、噁二唑環、吡啶環、噠嗪環、嘧啶環及吡嗪 環之芳香族雜環爲基本骨架者,連結基L含有1個或2個 以上選自上述芳香族烴環及芳香族雜環的環,含有2個以 上之該環時,這些環係直接鍵結或經由2價以上之連結基 φ 來鍵結。 8.如申請專利範圍第1或2項之負型藍紫色雷射感光 性組成物,其中環D及E及連結基L可具有之取代基爲選 自鹵原子;羥基;硝基;氰基;羧基;可被取代之烷基、 環烷基、烯基、環烯基、烷氧基、烷硫基、芳基、芳烷基 、烯氧基、烯硫基、醯基、醯氧基、胺基、醯基胺基、胺 基甲酸酯基、胺基甲醯基、羧酸酯基、胺磺醯基、磺酸酯 基、-C = N表示之基團、-C = N-N表示之基團、飽和或不飽 和之雜環基。 -4 - 1354864 9. 如申請專利範圍第5項之負型藍紫色雷射感光性組 成物,其中環A〜G及連結基L可具有之取代基爲選自鹵 原子;羥基;硝基;氰基;羧基;可被取代之烷基、環烷 基、烯基、環烯基、烷氧基、烷硫基、芳基、芳烷基、烯 氧基、烯硫基、醯基、醯氧基、胺基、醯基胺基、胺基甲 酸酯基、胺基甲醯基、羧酸酯基、胺磺醯基、磺酸酯基、-C = N表示之基團、-C=N-N表示之基團、飽和或不飽和之雜 環基。 10. 如申請專利範圍第6項之負型藍紫色雷射感光性組 成物,其中環A〜G及連結基L可具有之取代基爲選自鹵 原子;羥基;硝基;氰基;羧基;可被取代之烷基、環烷 基、烯基、環烯基、烷氧基、烷硫基、芳基、芳烷基、烯 氧基、烯硫基、醯基、醯氧基、胺基、醯基胺基、胺基甲 酸酯基、胺基甲醯基、羧酸酯基、胺磺醯基、磺酸酯基、-C = N表示之基團' -C = N-N表示之基團、飽和或不飽和之雜 環基。 1 1 ·如申請專利範圍第1或2項之負型藍紫色雷射感 光性組成物,其中感光性組成物爲以乙烯性不飽和化合物 及光聚合引發劑爲基本組成的負型。 1 2 .如申請專利範圍第1或2項之負型藍紫色雷射感 光性組成物,其中聚合抑制劑之含量爲5〜60ppm。 1 3 .如申請專利範圍第1 2項之負型藍紫色雷射感光性 組成物,其中聚合抑制劑爲對苯二酚衍生物類。 14.如申請專利範圍第n項之負型藍紫色雷射感光性 -5- 1354864 組成物,其中光聚合引發劑含有六芳基聯咪唑系化合物。 15. 如申請專利範圍第Π項之負型藍紫色雷射感光性 組成物,其中尙含有鹼可溶性樹脂。 16. 如申請專利範圍第15項之負型藍紫色雷射感光性 組成物,其中鹼可溶性樹脂爲含有含來自苯乙烯系單體、 (甲基)丙烯酸酯單體及(甲基)丙烯酸之各單體之構成 重複單位的共聚物。 # 17.—種負型藍紫色雷射感光性圖像形成材料(A), 其特徵係於假支持膜上形成如申請專利範圍第1〜16項中 任一項之負型藍紫色雷射感光性組成物的層所成。 18. —種負型藍紫色雷射感光性圖像形成材(B),其 特徵係於被加工基板上,在其負型藍紫色雷射感光性組成 物層側層合如申請專利範圍第1 7項之負型藍紫色雷射感 光性圖像形成材料(A )所成。 19. 如申請專利範圍第18項之負型藍紫色雷射感光性 φ 圖像形成材(B),其中被層合於被加工基板上之負型藍 紫色雷射感光性圖像形成材料(A)之負型藍紫色雷射感 光性組成物層的厚度爲以上。 20. —種圖像形成方法’其特徵係將如申請專利範圍 第18或19項之負型藍紫色雷射感光性圖像形成材(B) 之負型藍紫色雷射感光性組成物層’藉由波長390至 43 Onm之雷射光掃描曝光,進行顯像處理產生圖像。(xm) (In the general formulae (XI) and (XIII), the rings A, B, C, F, and G are each independently an aromatic hydrocarbon ring or an aromatic heterocyclic ring as the basic skeleton' ring A and ring. 8. The ring F and the ring g are bonded to each other to form a N-containing bond ring. In the general formula (XIII), R is an alkyl group which may have a substituent, and the rings A, B, C, F, G may have a substitution. The substituents may be bonded to each other to form a ring). 6. The negative blue-violet laser photosensitive composition 'in which ring 1' and the E system are independently selected from the group consisting of a benzene ring, a naphthalene ring, an anthracene ring, a sin ring, a mo ring, and the like, respectively. An aromatic hydrocarbon ring of an anthracene ring, a terpene ring and an anthracene ring, or a furan ring, a thiophene ring, a pyrrole ring, an oxazole ring, an isoxazole ring 'thia-3- 1354864 azole ring, an isothiazole ring, an imidazole ring The pyrazole ring, the furazolium ring, the triazole ring, the pyran ring, the thiadiazole ring, the oxadiazole ring, the pyridine ring, the pyridazine ring, the pyrimidine ring and the aromatic heterocyclic ring of the pyrazine ring are basic skeletons. The linking group L contains one or two or more rings selected from the above aromatic hydrocarbon ring and aromatic hetero ring, and when two or more such rings are contained, these ring systems are directly bonded or bonded via a valence of two or more valences. Come to the key. ' 7. The negative blue-violet laser photosensitive group φ of the fifth aspect of the patent application, wherein the rings A to G are independently selected from the group consisting of a benzene ring, a naphthalene ring, an anthracene ring, a phenanthrene ring, and a ring. An aromatic hydrocarbon ring of an anthracene ring, a terpene ring and an anthracene ring, or a furan ring, a thiophene ring, a pyrrole ring, an oxazole ring, an isoxazole ring, a thiazole ring, an isothiazole ring, an imidazole ring, a pyrazole ring, The aromatic heterocyclic ring of the furazan ring, the triazole ring, the pyran ring, the thiadiazole ring, the oxadiazole ring, the pyridine ring, the pyridazine ring, the pyrimidine ring and the pyrazine ring is a basic skeleton, and the linking group L contains 1 When two or more rings selected from the above aromatic hydrocarbon ring and aromatic hetero ring contain two or more such rings, these rings are directly bonded or bonded via a divalent or higher linking group φ. 8. The negative blue-violet laser photosensitive composition according to claim 1 or 2, wherein the ring D and E and the linking group L may have a substituent selected from a halogen atom; a hydroxyl group; a nitro group; Carboxyl; alkyl, cycloalkyl, alkenyl, cycloalkenyl, alkoxy, alkylthio, aryl, aralkyl, alkenyloxy, arylthio, decyl, decyloxy groups which may be substituted , amine, mercaptoamine, urethane, aminocarbyl, carboxylate, amidoxime, sulfonate, group represented by -C = N, -C = NN a group represented by a saturated or unsaturated heterocyclic group. -4 - 1354864 9. The negative blue-violet laser photosensitive composition of claim 5, wherein the ring A to G and the linking group L may have a substituent selected from a halogen atom; a hydroxyl group; a nitro group; Cyano; carboxy; alkyl, cycloalkyl, alkenyl, cycloalkenyl, alkoxy, alkylthio, aryl, aralkyl, alkenyloxy, arylthio, anthracenyl, anthracene Oxy group, amine group, mercaptoamine group, urethane group, aminomercapto group, carboxylate group, amidoxime group, sulfonate group, group represented by -C=N, -C a group represented by =NN, a saturated or unsaturated heterocyclic group. 10. The negative blue-violet laser photosensitive composition of claim 6, wherein the ring A to G and the linking group L may have a substituent selected from a halogen atom; a hydroxyl group; a nitro group; a cyano group; Alkyl, cycloalkyl, alkenyl, cycloalkenyl, alkoxy, alkylthio, aryl, aralkyl, alkenyloxy, arylthio, decyl, decyloxy, amine a group represented by a group, a mercaptoamine group, a urethane group, an aminocarbamyl group, a carboxylate group, an aminesulfonyl group, a sulfonate group, and -C=N' -C = NN a group, a saturated or unsaturated heterocyclic group. The negative blue-violet laser photosensitive composition according to claim 1 or 2, wherein the photosensitive composition is a negative type mainly composed of an ethylenically unsaturated compound and a photopolymerization initiator. A negative blue-violet laser photosensitive composition according to claim 1 or 2, wherein the polymerization inhibitor is contained in an amount of 5 to 60 ppm. A negative blue-violet laser photosensitive composition according to claim 12, wherein the polymerization inhibitor is a hydroquinone derivative. 14. The negative blue-violet laser photosensitive -5 - 1354864 composition according to the nth aspect of the patent application, wherein the photopolymerization initiator contains a hexaarylbiimidazole compound. 15. The negative blue-violet laser photosensitive composition of claim 3, wherein the cerium contains an alkali-soluble resin. 16. The negative blue-violet laser photosensitive composition according to claim 15, wherein the alkali-soluble resin contains a content derived from a styrene monomer, a (meth) acrylate monomer, and a (meth) acrylic acid. The copolymer of each monomer constitutes a repeating unit. #17—a negative blue-violet laser photosensitive image forming material (A) characterized in that a negative blue-violet laser is formed on the dummy support film as in any one of claims 1 to 16. A layer of a photosensitive composition is formed. 18. A negative blue-violet laser photosensitive image forming material (B) characterized by being laminated on a substrate to be processed on the side of a negative blue-violet laser photosensitive composition layer as claimed in the patent application A 17-negative blue-violet laser photosensitive image forming material (A). 19. The negative-type blue-violet laser-sensitized φ image-forming material (B) according to claim 18, wherein the negative-type blue-violet laser-sensitive image forming material laminated on the substrate to be processed ( The thickness of the negative blue-violet laser photosensitive composition layer of A) is more than the above. 20. An image forming method which is characterized by a negative blue-violet laser photosensitive composition layer of a negative blue-violet laser photosensitive image forming material (B) as claimed in claim 18 or 19. 'Image scanning is performed by laser light exposure with a wavelength of 390 to 43 Onm to generate an image.
TW93128914A 2003-09-25 2004-09-23 Negative blue-violet laser photosensitive composition, image forming material, image former and method of image formation TW200521624A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003332626 2003-09-25
JP2003344636 2003-10-02

Publications (2)

Publication Number Publication Date
TW200521624A TW200521624A (en) 2005-07-01
TWI354864B true TWI354864B (en) 2011-12-21

Family

ID=34395582

Family Applications (2)

Application Number Title Priority Date Filing Date
TW96146583A TW200821754A (en) 2003-09-25 2004-09-23 Negative blue-violet laser photosensitive composition, image forming material, image former and method of image formation
TW93128914A TW200521624A (en) 2003-09-25 2004-09-23 Negative blue-violet laser photosensitive composition, image forming material, image former and method of image formation

Family Applications Before (1)

Application Number Title Priority Date Filing Date
TW96146583A TW200821754A (en) 2003-09-25 2004-09-23 Negative blue-violet laser photosensitive composition, image forming material, image former and method of image formation

Country Status (3)

Country Link
KR (2) KR100998459B1 (en)
TW (2) TW200821754A (en)
WO (1) WO2005031463A1 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1950750B (en) * 2004-05-12 2012-10-24 旭化成电子材料株式会社 Pattern forming material, pattern forming apparatus and pattern forming method
JP2006308983A (en) * 2005-04-28 2006-11-09 Fuji Photo Film Co Ltd Pattern forming method
JP5013831B2 (en) * 2006-06-23 2012-08-29 富士フイルム株式会社 Curable composition for color filter, color filter, and method for producing the same
KR101398503B1 (en) * 2006-06-23 2014-05-27 후지필름 가부시키가이샤 Compound, photosensitive composition, curable composition, curable composition for color filter, color filter, and producing method thereof
MY152732A (en) * 2008-04-28 2014-11-28 Hitachi Chemical Co Ltd Photosensitive resin composition, photosensitive element, method for forming resist pattern and method for manufacturing printed wiring board
KR101350547B1 (en) * 2009-04-30 2014-01-10 히타치가세이가부시끼가이샤 Photosensitive resin composition, photosensitive element utilizing the composition method for formation of resist pattern, and process for production of printed circuit board
TWI491982B (en) * 2009-10-28 2015-07-11 Sumitomo Chemical Co Coloring the photosensitive resin composition
CN105001081B (en) * 2015-06-24 2017-03-01 常州强力电子新材料股份有限公司 A kind of anthracene system sensitizer and its application in UV LED light curing system
CN112835268B (en) * 2020-12-30 2022-12-30 烟台魔技纳米科技有限公司 Bio-based water-soluble negative photoresist and application thereof in femtosecond laser direct writing processing method

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0990619A (en) * 1995-09-20 1997-04-04 Brother Ind Ltd Photosetting composition and photosensitive capsule
JP4685259B2 (en) * 2000-04-19 2011-05-18 コダック株式会社 Photosensitive lithographic printing plate and printing plate making method
JP3832248B2 (en) * 2001-01-26 2006-10-11 三菱化学株式会社 Photopolymerizable composition and color filter
JP2002287380A (en) * 2001-03-26 2002-10-03 Mitsubishi Chemicals Corp Method for forming image
JP4221467B2 (en) * 2001-04-20 2009-02-12 デュポン エムアールシー ドライフィルム株式会社 Photopolymerizable resin composition for resist
JP2003140358A (en) * 2001-11-01 2003-05-14 Fuji Photo Film Co Ltd Method for making photosensitive lithographic printing plate
JP2003221517A (en) * 2002-01-30 2003-08-08 Fuji Photo Film Co Ltd Method for producing sensitized dye and photosensitive composition given by using the same
KR101003323B1 (en) * 2002-08-07 2010-12-22 미쓰비시 가가꾸 가부시키가이샤 Image forming material having bluish-violet laser-photosensitive resist material layer and resist image forming method therefor

Also Published As

Publication number Publication date
WO2005031463A1 (en) 2005-04-07
KR20060065576A (en) 2006-06-14
KR100998459B1 (en) 2010-12-06
TW200821754A (en) 2008-05-16
KR100970357B1 (en) 2010-07-16
KR20070119098A (en) 2007-12-18
TW200521624A (en) 2005-07-01

Similar Documents

Publication Publication Date Title
KR101003323B1 (en) Image forming material having bluish-violet laser-photosensitive resist material layer and resist image forming method therefor
JP2005128508A (en) Negative blue-violet laser photosensitive composition, and image forming material, image former and method of image formation using the same
TWI354864B (en)
KR20170111342A (en) Colored photosensitive resin composition, color filter and image display device produced using the same
JP2005128412A (en) Image forming material and image forming method using the same
JP5174124B2 (en) Photosensitive resin composition for MEMS structural member, pattern production method, MEMS structure and production method thereof
JP4096857B2 (en) Blue-violet laser-sensitive image forming material, blue-violet laser-sensitive image forming material, and image forming method
JP2005003953A (en) Lavender-light-sensitive composition, image forming material using the same, image forming member and image forming method
JP2004170609A (en) Bluish-purple laser photosensitive composition, and image forming material, image forming stuff and image forming method using the composition
JP2004184871A (en) Blue-violet laser photosensitive composition and image forming material, imaging material and image forming method using the same
JP4679213B2 (en) Blue-violet laser photosensitive composition, blue-violet laser image forming material and blue-violet laser image forming material
JP4501390B2 (en) Blue-violet semiconductor laser photosensitive image forming material
JP2004191938A (en) Blue-violet laser photosensitive composition, image forming material using the same, imaging material and method for forming image
JP4385737B2 (en) Photosensitive resin composition, photosensitive image forming material and photosensitive image forming material using the same
JP4337485B2 (en) Blue-violet laser photosensitive composition, and image forming material, image forming material, and image forming method using the same
Sugita et al. I-line photoresist composed of multifunctional acrylate, photo initiator, and photo acid generator, which can be patterned after g-line photo-crosslinking
JP2005208561A (en) Bluish violet laser sensitive composition, and image forming material, photosensitive image forming material and image forming method using the same
CN1705913B (en) Negative blue-violet laser photosensitive composition, image forming material, image former and method of image formation
JP2004295058A (en) Photosensitive composition
JP2004302049A (en) Photosensitive resin composition
JP4581387B2 (en) Photosensitive resin composition, and photosensitive image forming material and photosensitive image forming material using the same
JP4325392B2 (en) Photosensitive resin composition, photosensitive image forming material and photosensitive image forming material using the same
JP2005338375A (en) Photopolymerizable composition, photosensitive image forming medium, photosensitive image forming material and image forming method therefor
JP2004163492A (en) Blue-violet laser photosensitive composition, image forming material using same, imaging material and method for forming image
JP2004126375A (en) Blue-violet laser photosensitive composition and imaging material, image forming member and image formation method using the photosensitive composition