TWI350319B - Verfahren zur herstellung einer schichtenstruktur - Google Patents

Verfahren zur herstellung einer schichtenstruktur

Info

Publication number
TWI350319B
TWI350319B TW096115743A TW96115743A TWI350319B TW I350319 B TWI350319 B TW I350319B TW 096115743 A TW096115743 A TW 096115743A TW 96115743 A TW96115743 A TW 96115743A TW I350319 B TWI350319 B TW I350319B
Authority
TW
Taiwan
Prior art keywords
schichtenstruktur
zur herstellung
verfahren zur
herstellung einer
einer
Prior art date
Application number
TW096115743A
Other languages
English (en)
Other versions
TW200742770A (en
Inventor
Thomas Buschhardt
Original Assignee
Siltronic Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siltronic Ag filed Critical Siltronic Ag
Publication of TW200742770A publication Critical patent/TW200742770A/zh
Application granted granted Critical
Publication of TWI350319B publication Critical patent/TWI350319B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046—Dry cleaning only
    • H01L21/02049—Dry cleaning only with gaseous HF
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/12—Gaseous compositions

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
  • Weting (AREA)
  • Recrystallisation Techniques (AREA)
  • Transition And Organic Metals Composition Catalysts For Addition Polymerization (AREA)
  • Laminated Bodies (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
TW096115743A 2006-05-04 2007-05-03 Verfahren zur herstellung einer schichtenstruktur TWI350319B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102006020825A DE102006020825A1 (de) 2006-05-04 2006-05-04 Verfahren zur Herstellung einer Schichtenstruktur

Publications (2)

Publication Number Publication Date
TW200742770A TW200742770A (en) 2007-11-16
TWI350319B true TWI350319B (en) 2011-10-11

Family

ID=38325557

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096115743A TWI350319B (en) 2006-05-04 2007-05-03 Verfahren zur herstellung einer schichtenstruktur

Country Status (8)

Country Link
US (1) US7538008B2 (zh)
EP (1) EP1852901B1 (zh)
JP (1) JP4700652B2 (zh)
KR (1) KR20070108063A (zh)
CN (1) CN100587911C (zh)
DE (2) DE102006020825A1 (zh)
SG (1) SG136932A1 (zh)
TW (1) TWI350319B (zh)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5367330B2 (ja) * 2007-09-14 2013-12-11 株式会社半導体エネルギー研究所 Ｓｏｉ基板の作製方法及び半導体装置の作製方法
JP2010171330A (ja) * 2009-01-26 2010-08-05 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 エピタキシャルウェハの製造方法、欠陥除去方法およびエピタキシャルウェハ
WO2010150547A1 (ja) 2009-06-26 2010-12-29 株式会社Sumco シリコンウェーハの洗浄方法、およびその洗浄方法を用いたエピタキシャルウェーハの製造方法
JP6619703B2 (ja) * 2016-06-28 2019-12-11 株式会社Ｓｃｒｅｅｎホールディングス エッチング方法
DE102017210450A1 (de) * 2017-06-21 2018-12-27 Siltronic Ag Verfahren, Steuerungssystem und Anlage zum Bearbeiten einer Halbleiterscheibe sowie Halbleiterscheibe

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02106927A (ja) * 1988-10-17 1990-04-19 Fujitsu Ltd 半導体装置の製造方法
US5022961B1 (en) * 1989-07-26 1997-05-27 Dainippon Screen Mfg Method for removing a film on a silicon layer surface
JPH06168922A (ja) * 1992-06-25 1994-06-14 Texas Instr Inc <Ti> シリコンの気相エッチング法
JPH06151359A (ja) * 1992-11-12 1994-05-31 Nippon Steel Corp 半導体ウェハのエッチング方法およびエッチング装置
JPH0839753A (ja) * 1994-07-27 1996-02-13 Nippon Paint Co Ltd カラー印刷方法
KR0170902B1 (ko) * 1995-12-29 1999-03-30 김주용 반도체 소자의 제조방법
US7404863B2 (en) * 1997-05-09 2008-07-29 Semitool, Inc. Methods of thinning a silicon wafer using HF and ozone
JP3292101B2 (ja) * 1997-07-18 2002-06-17 信越半導体株式会社 珪素単結晶基板表面の平滑化方法
US6465374B1 (en) * 1997-10-21 2002-10-15 Fsi International, Inc. Method of surface preparation
US6221168B1 (en) * 1998-06-16 2001-04-24 Fsi International, Inc. HF/IPA based process for removing undesired oxides form a substrate
JP2000281497A (ja) * 1999-03-31 2000-10-10 Shinkosha:Kk 単結晶の処理方法
DE19960823B4 (de) 1999-12-16 2007-04-12 Siltronic Ag Verfahren zur Herstellung einer epitaxierten Halbleiterscheibe und deren Verwendung
DE10025871A1 (de) * 2000-05-25 2001-12-06 Wacker Siltronic Halbleitermat Epitaxierte Halbleiterscheibe und Verfahren zu ihrer Herstellung
US20030060020A1 (en) 2000-10-12 2003-03-27 Silicon Evolution, Inc. Method and apparatus for finishing substrates for wafer to wafer bonding
US6890835B1 (en) 2000-10-19 2005-05-10 International Business Machines Corporation Layer transfer of low defect SiGe using an etch-back process
KR101027485B1 (ko) * 2001-02-12 2011-04-06 에이에스엠 아메리카, 인코포레이티드 반도체 박막 증착을 위한 개선된 공정
KR20040008193A (ko) * 2001-05-30 2004-01-28 에이에스엠 아메리카, 인코포레이티드 저온 로딩 및 소성
AU2003222003A1 (en) * 2002-03-14 2003-09-29 Amberwave Systems Corporation Methods for fabricating strained layers on semiconductor substrates
US6958286B2 (en) * 2004-01-02 2005-10-25 International Business Machines Corporation Method of preventing surface roughening during hydrogen prebake of SiGe substrates
KR100925310B1 (ko) * 2004-01-16 2009-11-04 인터내셔널 비지네스 머신즈 코포레이션 고 완화율 및 저 적층 결함 밀도를 갖는 박막 ｓｇｏｉ웨이퍼를 형성하는 방법
DE102004062355A1 (de) * 2004-12-23 2006-07-06 Siltronic Ag Verfahren zum Behandeln einer Halbleiterscheibe mit einem gasförmigen Medium sowie damit behandelte Halbleiterscheibe

Also Published As

Publication number Publication date
DE102006020825A1 (de) 2007-11-08
KR20070108063A (ko) 2007-11-08
DE502007003819D1 (de) 2010-07-01
CN100587911C (zh) 2010-02-03
JP4700652B2 (ja) 2011-06-15
CN101068001A (zh) 2007-11-07
SG136932A1 (en) 2007-11-29
EP1852901A1 (de) 2007-11-07
JP2007300115A (ja) 2007-11-15
TW200742770A (en) 2007-11-16
US7538008B2 (en) 2009-05-26
EP1852901B1 (de) 2010-05-19
US20070259530A1 (en) 2007-11-08

Similar Documents

Publication Publication Date Title
TWI315916B (en) Elektromagnetische strahlung emittierendes optoelektronisches bauelement und verfahren zur herstellung eines optoelektronischen bauelements
TWI372192B (en) Verfahren und vorrichtung zur herstellung von halbleiterscheiben aus silicium
EP2049329A4 (en) SUPERHYDROPHILIC COATINGS
GB0713471D0 (en) Verfahren zur ladendruckregelung einer brennkraftmaschine
ATE455105T1 (de) Verfahren zur herstellung von difluormethylpyrazolylcarboxylaten
DE602005026300D1 (de) Plasmadüsengruppe zur bereitstellung einer gleichf
ATE488141T1 (de) Sterilisationsverfahren zur herstellung einer nahrungsmittelzusammensetzung
DE602007009096D1 (de) Verfahren zur herstellung von benzopyran-2-olderivaten
EP1985193A4 (en) WIG
DE602007009856D1 (de) Verteilerleitung und verfahren zur herstellung einer verteilerleitung
TWI347555B (en) Plc
ATE526429T1 (de) Verfahren zur herstellung einer beschichtung
EP1992242A4 (en) WIG
EP2083984A4 (en) ANFORMSYSTEM
DE502007003740D1 (de) Verfahren zur herstellung einer rutschhemmenden beschichtung
TWI350319B (en) Verfahren zur herstellung einer schichtenstruktur
GB0910201D0 (en) The preparation method of 2-deoxy-l-ribose
DE602005022360D1 (de) Verfahren zur herstellung einer zusammensetzung
ATE544755T1 (de) Verfahren zur herstellung einer 5-alkoxy-4- hydroxymethylpyrazolverbindung
GB0713473D0 (en) Verfahren zur ladedruckregelung einer brennkraftmaschine fur kraftfahrzeuge
DE602007012716D1 (de) Verfahren zur herstellung von amidrazonen
DE602007001646D1 (de) Verfahren zur Herstellung einer Siloxanverbindung mit einer Isocyanatgruppe
DE602007010708D1 (de) Verfahren zur Herstellung biologisch abbaubaren Polyoxyalkylens
DE602007011818D1 (de) Und verfahren zur herstellung einer derartigen zusammensetzung
GB0724807D0 (en) Cladding

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees