TWI349371B - An optoelectronical semiconductor device having a bonding structure - Google Patents

An optoelectronical semiconductor device having a bonding structure

Info

Publication number
TWI349371B
TWI349371B TW096105579A TW96105579A TWI349371B TW I349371 B TWI349371 B TW I349371B TW 096105579 A TW096105579 A TW 096105579A TW 96105579 A TW96105579 A TW 96105579A TW I349371 B TWI349371 B TW I349371B
Authority
TW
Taiwan
Prior art keywords
optoelectronical
semiconductor device
bonding structure
bonding
semiconductor
Prior art date
Application number
TW096105579A
Other languages
English (en)
Other versions
TW200834940A (en
Inventor
Min Hsun Hsieh
Original Assignee
Epistar Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Epistar Corp filed Critical Epistar Corp
Priority to TW096105579A priority Critical patent/TWI349371B/zh
Priority to US12/068,887 priority patent/US8581093B2/en
Publication of TW200834940A publication Critical patent/TW200834940A/zh
Application granted granted Critical
Publication of TWI349371B publication Critical patent/TWI349371B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/161—Photovoltaic cells having only PN heterojunction potential barriers comprising multiple PN heterojunctions, e.g. tandem cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
    • H01L25/0756—Stacked arrangements of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/142—Photovoltaic cells having only PN homojunction potential barriers comprising multiple PN homojunctions, e.g. tandem cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • H10F10/172—Photovoltaic cells having only PIN junction potential barriers comprising multiple PIN junctions, e.g. tandem cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Photovoltaic Devices (AREA)
TW096105579A 2007-02-13 2007-02-13 An optoelectronical semiconductor device having a bonding structure TWI349371B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
TW096105579A TWI349371B (en) 2007-02-13 2007-02-13 An optoelectronical semiconductor device having a bonding structure
US12/068,887 US8581093B2 (en) 2007-02-13 2008-02-13 Optoelectronical semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW096105579A TWI349371B (en) 2007-02-13 2007-02-13 An optoelectronical semiconductor device having a bonding structure

Publications (2)

Publication Number Publication Date
TW200834940A TW200834940A (en) 2008-08-16
TWI349371B true TWI349371B (en) 2011-09-21

Family

ID=39684804

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096105579A TWI349371B (en) 2007-02-13 2007-02-13 An optoelectronical semiconductor device having a bonding structure

Country Status (2)

Country Link
US (1) US8581093B2 (zh)
TW (1) TWI349371B (zh)

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US10541349B1 (en) 2008-12-17 2020-01-21 Solaero Technologies Corp. Methods of forming inverted multijunction solar cells with distributed Bragg reflector
US20150357501A1 (en) * 2008-12-17 2015-12-10 Solaero Technologies Corp. Four junction inverted metamorphic solar cell
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US7952106B2 (en) * 2009-04-10 2011-05-31 Everlight Electronics Co., Ltd. Light emitting diode device having uniform current distribution and method for forming the same
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US8399889B2 (en) * 2009-11-09 2013-03-19 Solarmer Energy, Inc. Organic light emitting diode and organic solar cell stack
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JP5215284B2 (ja) 2009-12-25 2013-06-19 シャープ株式会社 多接合型化合物半導体太陽電池
US9559229B2 (en) * 2009-12-31 2017-01-31 Epistar Corporation Multi-junction solar cell
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CN107534066A (zh) * 2015-02-27 2018-01-02 密歇根大学董事会 具有中间光学滤波器的机械堆叠串列光伏电池
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Also Published As

Publication number Publication date
TW200834940A (en) 2008-08-16
US8581093B2 (en) 2013-11-12
US20080190479A1 (en) 2008-08-14

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