TWI349048B - - Google Patents

Info

Publication number
TWI349048B
TWI349048B TW096118286A TW96118286A TWI349048B TW I349048 B TWI349048 B TW I349048B TW 096118286 A TW096118286 A TW 096118286A TW 96118286 A TW96118286 A TW 96118286A TW I349048 B TWI349048 B TW I349048B
Authority
TW
Taiwan
Application number
TW096118286A
Other versions
TW200806824A (en
Inventor
Hiroshi Hayakawa
Tokuji Maeda
Original Assignee
Sumco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumco Corp filed Critical Sumco Corp
Publication of TW200806824A publication Critical patent/TW200806824A/zh
Application granted granted Critical
Publication of TWI349048B publication Critical patent/TWI349048B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y10T117/1008—Apparatus with means for measuring, testing, or sensing with responsive control means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y10T117/1012—Apparatus with means for measuring, testing, or sensing with a window or port for visual observation or examination
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1072—Seed pulling including details of means providing product movement [e.g., shaft guides, servo means]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
TW096118286A 2006-05-30 2007-05-23 Melt surface position monitoring apparatus in silicon single crystal growth process TW200806824A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006149890A JP4784401B2 (ja) 2006-05-30 2006-05-30 シリコン単結晶の育成プロセスにおける融液の液面位置監視装置

Publications (2)

Publication Number Publication Date
TW200806824A TW200806824A (en) 2008-02-01
TWI349048B true TWI349048B (zh) 2011-09-21

Family

ID=38565912

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096118286A TW200806824A (en) 2006-05-30 2007-05-23 Melt surface position monitoring apparatus in silicon single crystal growth process

Country Status (6)

Country Link
US (1) US8012258B2 (zh)
EP (1) EP1862571B1 (zh)
JP (1) JP4784401B2 (zh)
KR (1) KR100835050B1 (zh)
CN (1) CN101126173B (zh)
TW (1) TW200806824A (zh)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4784401B2 (ja) * 2006-05-30 2011-10-05 株式会社Ｓｕｍｃｏ シリコン単結晶の育成プロセスにおける融液の液面位置監視装置
JP4918897B2 (ja) 2007-08-29 2012-04-18 株式会社Ｓｕｍｃｏ シリコン単結晶引上方法
JP5417735B2 (ja) * 2008-04-21 2014-02-19 株式会社Ｓｕｍｃｏ シリコン単結晶の育成方法
US20100024717A1 (en) 2008-07-31 2010-02-04 Benno Orschel Reversed action diameter control in a semiconductor crystal growth system
CN101982569B (zh) * 2010-11-24 2013-04-24 浙江昱辉阳光能源有限公司 直拉单晶炉硅液面位置控制方法及装置
JP5683517B2 (ja) * 2012-03-16 2015-03-11 ジルトロニック アクチエンゲゼルシャフトＳｉｌｔｒｏｎｉｃ ＡＧ シリコン単結晶の製造方法
CN106687625B (zh) * 2014-09-12 2019-06-21 信越半导体株式会社 单晶的制造方法
TWI592524B (zh) * 2014-09-24 2017-07-21 Ｓｕｍｃｏ股份有限公司 單晶矽之製造方法及製造系統
CN108823634A (zh) * 2018-06-01 2018-11-16 上海汉虹精密机械有限公司 半导体单晶炉液面位置控制装置及方法
CN111139520A (zh) * 2018-11-05 2020-05-12 上海新昇半导体科技有限公司 一种直拉法引晶方法
CN111826710A (zh) * 2019-04-23 2020-10-27 上海新昇半导体科技有限公司 一种控制硅熔体坩埚安全升降的方法和装置
CN110284184A (zh) * 2019-07-26 2019-09-27 内蒙古中环协鑫光伏材料有限公司 一种直拉单晶液位保护系统及其控制方法

Family Cites Families (24)

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JPS63281022A (ja) * 1987-05-12 1988-11-17 Osaka Titanium Seizo Kk 単結晶成長装置における融液面のレベル測定方法
WO1992019797A1 (en) 1991-04-26 1992-11-12 Mitsubishi Materials Corporation Process for pulling up single crystal
JP2735960B2 (ja) * 1991-04-30 1998-04-02 三菱マテリアル株式会社 液面制御方法
DE4231162C2 (de) * 1992-09-17 1996-03-14 Wacker Siltronic Halbleitermat Verfahren zur Regelung der Schmelzenhöhe während des Ziehens von Einkristallen
US5888299A (en) * 1995-12-27 1999-03-30 Shin-Etsu Handotai Co., Ltd. Apparatus for adjusting initial position of melt surface
JP4103968B2 (ja) * 1996-09-18 2008-06-18 株式会社半導体エネルギー研究所 絶縁ゲイト型半導体装置
US6171391B1 (en) * 1998-10-14 2001-01-09 Memc Electronic Materials, Inc. Method and system for controlling growth of a silicon crystal
JP4616949B2 (ja) 1999-03-17 2011-01-19 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 メルトレベル検出装置及び検出方法
US6673330B1 (en) * 1999-03-26 2004-01-06 National Institute For Research In Inorganic Materials Single crystal of lithium niobate or tantalate and its optical element, and process and apparatus for producing an oxide single crystal
TW546423B (en) 2000-05-01 2003-08-11 Komatsu Denshi Kinzoku Kk Method and apparatus for measuring melt level
JP2002005745A (ja) * 2000-06-26 2002-01-09 Nec Corp 温度測定装置、および温度測定方法
US6454851B1 (en) * 2000-11-09 2002-09-24 Memc Electronic Materials, Inc. Method for preparing molten silicon melt from polycrystalline silicon charge
US6828163B2 (en) * 2000-11-16 2004-12-07 Shin-Etsu Handotai Co., Ltd. Wafer shape evaluating method and device producing method, wafer and wafer selecting method
JP4161547B2 (ja) * 2001-06-28 2008-10-08 株式会社Ｓｕｍｃｏ 単結晶引上装置および単結晶引上方法およびプログラムおよび記録媒体
JP4464033B2 (ja) * 2002-06-13 2010-05-19 信越半導体株式会社 半導体ウエーハの形状評価方法及び形状評価装置
KR100665683B1 (ko) * 2002-07-05 2007-01-09 가부시키가이샤 섬코 실리콘 단결정 제조방법
EP1595006B1 (en) * 2003-02-11 2006-07-12 Topsil Semiconductor Materials A/S An apparatus for and a method of manufacturing a single crystal rod
JP2005015312A (ja) * 2003-06-27 2005-01-20 Shin Etsu Handotai Co Ltd 単結晶の製造方法及び単結晶
US6960254B2 (en) * 2003-07-21 2005-11-01 Memc Electronic Materials, Inc. Method to monitor and control the crystal cooling or quenching rate by measuring crystal surface temperature
JP4815766B2 (ja) * 2004-08-03 2011-11-16 株式会社Ｓｕｍｃｏ シリコン単結晶製造装置及び製造方法
JP4784401B2 (ja) * 2006-05-30 2011-10-05 株式会社Ｓｕｍｃｏ シリコン単結晶の育成プロセスにおける融液の液面位置監視装置
US7758696B2 (en) * 2007-09-27 2010-07-20 Bp Corporation North America Inc Methods and systems for monitoring a solid-liquid interface
US20100024717A1 (en) * 2008-07-31 2010-02-04 Benno Orschel Reversed action diameter control in a semiconductor crystal growth system
US8221545B2 (en) * 2008-07-31 2012-07-17 Sumco Phoenix Corporation Procedure for in-situ determination of thermal gradients at the crystal growth front

Also Published As

Publication number Publication date
US8012258B2 (en) 2011-09-06
EP1862571B1 (en) 2016-08-10
KR20070115711A (ko) 2007-12-06
JP2007320782A (ja) 2007-12-13
KR100835050B1 (ko) 2008-06-03
CN101126173A (zh) 2008-02-20
US20070277727A1 (en) 2007-12-06
TW200806824A (en) 2008-02-01
CN101126173B (zh) 2010-12-01
JP4784401B2 (ja) 2011-10-05
EP1862571A1 (en) 2007-12-05

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