TWI348738B - - Google Patents

Info

Publication number
TWI348738B
TWI348738B TW096107979A TW96107979A TWI348738B TW I348738 B TWI348738 B TW I348738B TW 096107979 A TW096107979 A TW 096107979A TW 96107979 A TW96107979 A TW 96107979A TW I348738 B TWI348738 B TW I348738B
Authority
TW
Taiwan
Application number
TW096107979A
Other versions
TW200741880A (en
Inventor
Masashi Sugishita
Masaaki Ueno
Original Assignee
Hitachi Int Electric Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Int Electric Inc filed Critical Hitachi Int Electric Inc
Publication of TW200741880A publication Critical patent/TW200741880A/zh
Application granted granted Critical
Publication of TWI348738B publication Critical patent/TWI348738B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Control Of Temperature (AREA)
  • Feedback Control In General (AREA)
  • Control Of Heat Treatment Processes (AREA)
TW096107979A 2006-03-09 2007-03-08 Temperature regulation method TW200741880A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006063684 2006-03-09

Publications (2)

Publication Number Publication Date
TW200741880A TW200741880A (en) 2007-11-01
TWI348738B true TWI348738B (zh) 2011-09-11

Family

ID=38474882

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096107979A TW200741880A (en) 2006-03-09 2007-03-08 Temperature regulation method

Country Status (4)

Country Link
US (1) US8367975B2 (zh)
JP (1) JP4891987B2 (zh)
TW (1) TW200741880A (zh)
WO (1) WO2007102454A1 (zh)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5734081B2 (ja) * 2010-10-18 2015-06-10 株式会社日立国際電気 基板処理装置、基板処理装置の温度制御方法、及び基板処理装置の加熱方法
JP5901276B2 (ja) * 2011-12-20 2016-04-06 株式会社Kelk 流体温度調整装置
JP5901275B2 (ja) * 2011-12-20 2016-04-06 株式会社Kelk 流体温度調整装置
US9089005B2 (en) * 2012-02-21 2015-07-21 General Electric Company Cooking oven control system
JP6930119B2 (ja) * 2017-01-30 2021-09-01 東京エレクトロン株式会社 加熱装置及び基板処理装置
KR102335473B1 (ko) * 2019-10-31 2021-12-07 세메스 주식회사 기판 처리 장치 및 그의 온도 제어 방법
JP7461490B2 (ja) 2020-09-28 2024-04-03 株式会社Kokusai Electric 温度制御方法、半導体装置の製造方法、プログラム及び基板処理装置
CN114047275B (zh) * 2022-01-17 2022-04-08 华谱科仪(北京)科技有限公司 一种色谱仪温度控制方法及装置
CN114617438A (zh) * 2022-03-18 2022-06-14 合肥美菱物联科技有限公司 一种即热式饮水机的控制系统及方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH097963A (ja) * 1995-06-19 1997-01-10 Kokusai Electric Co Ltd 電気炉のデータ処理方法
JP4551515B2 (ja) * 1998-10-07 2010-09-29 株式会社日立国際電気 半導体製造装置およびその温度制御方法
US6951998B2 (en) * 2000-04-14 2005-10-04 Omron Corporation Controller, temperature regulator and heat treatment apparatus
JP3834216B2 (ja) * 2000-09-29 2006-10-18 株式会社日立国際電気 温度制御方法
JP3784337B2 (ja) * 2001-03-05 2006-06-07 東京エレクトロン株式会社 熱処理方法及び熱処理装置
JP4362282B2 (ja) * 2002-12-09 2009-11-11 株式会社ジェイテクト 熱処理装置およびそれに用いられる温度制御方法
JP4978001B2 (ja) * 2005-01-17 2012-07-18 オムロン株式会社 温度制御方法、温度制御装置および熱処理装置

Also Published As

Publication number Publication date
JPWO2007102454A1 (ja) 2009-07-23
US8367975B2 (en) 2013-02-05
JP4891987B2 (ja) 2012-03-07
WO2007102454A1 (ja) 2007-09-13
TW200741880A (en) 2007-11-01
US20090107978A1 (en) 2009-04-30

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