TWI347669B - Fringe capacitor using bootstrapped non-metal layer - Google Patents

Fringe capacitor using bootstrapped non-metal layer

Info

Publication number
TWI347669B
TWI347669B TW096109585A TW96109585A TWI347669B TW I347669 B TWI347669 B TW I347669B TW 096109585 A TW096109585 A TW 096109585A TW 96109585 A TW96109585 A TW 96109585A TW I347669 B TWI347669 B TW I347669B
Authority
TW
Taiwan
Prior art keywords
bootstrapped
metal layer
fringe capacitor
fringe
capacitor
Prior art date
Application number
TW096109585A
Other languages
English (en)
Other versions
TW200802792A (en
Inventor
Scott C Mcleod
Original Assignee
Standard Microsyst Smc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Standard Microsyst Smc filed Critical Standard Microsyst Smc
Publication of TW200802792A publication Critical patent/TW200802792A/zh
Application granted granted Critical
Publication of TWI347669B publication Critical patent/TWI347669B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
    • H01L23/5223—Capacitor integral with wiring layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
    • H01L28/86—Electrodes with an enlarged surface, e.g. formed by texturisation having horizontal extensions
    • H01L28/87—Electrodes with an enlarged surface, e.g. formed by texturisation having horizontal extensions made by depositing layers, e.g. by depositing alternating conductive and insulating layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Integrated Circuits (AREA)
TW096109585A 2006-03-20 2007-03-20 Fringe capacitor using bootstrapped non-metal layer TWI347669B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/384,961 US8076752B2 (en) 2006-03-20 2006-03-20 Fringe capacitor using bootstrapped non-metal layer

Publications (2)

Publication Number Publication Date
TW200802792A TW200802792A (en) 2008-01-01
TWI347669B true TWI347669B (en) 2011-08-21

Family

ID=38516896

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096109585A TWI347669B (en) 2006-03-20 2007-03-20 Fringe capacitor using bootstrapped non-metal layer

Country Status (3)

Country Link
US (4) US8076752B2 (zh)
JP (1) JP4778464B2 (zh)
TW (1) TWI347669B (zh)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7528468B2 (en) * 2006-09-25 2009-05-05 Freescale Semiconductor, Inc. Capacitor assembly with shielded connections and method for forming the same
IT1403475B1 (it) * 2010-12-20 2013-10-17 St Microelectronics Srl Struttura di connessione per un circuito integrato con funzione capacitiva
KR20140005399A (ko) * 2012-06-27 2014-01-15 삼성전자주식회사 소신호 수신기 및 이를 포함한 집적회로
US8902004B2 (en) * 2012-09-27 2014-12-02 Xilinx, Inc. Reducing the effect of parasitic mismatch at amplifier inputs
US9450041B2 (en) * 2012-11-28 2016-09-20 Marvell World Trade Ltd. Stackable high-density metal-oxide-metal capacitor with minimum top plate parasitic capacitance
EP3729532B1 (en) 2017-12-18 2023-11-01 Intel Corporation Compound capacitor structures
CN110323334B (zh) * 2019-07-09 2023-03-24 四川中微芯成科技有限公司 一种用寄生电容做adc电容的结构及方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61263251A (ja) * 1985-05-17 1986-11-21 Nec Corp 半導体装置
NL9201053A (nl) * 1992-06-15 1994-01-03 Koninkl Philips Electronics Nv Switched capacitor ladingspomp, alsmede zaagtandoscillator voorzien van een dergelijke switched capacitor ladingspomp.
US5208725A (en) * 1992-08-19 1993-05-04 Akcasu Osman E High capacitance structure in a semiconductor device
JPH07283076A (ja) * 1994-04-15 1995-10-27 Nippon Telegr & Teleph Corp <Ntt> キャパシタ
JPH07297188A (ja) * 1994-04-25 1995-11-10 Hitachi Ltd 半導体集積回路装置
JP3413823B2 (ja) * 1996-03-07 2003-06-09 日本電気株式会社 半導体装置及びその製造方法
TW327241B (en) * 1997-07-24 1998-02-21 United Semiconductor Corp The method for lowing down gate boundary capacitor
US6781817B2 (en) * 2000-10-02 2004-08-24 Biosource, Inc. Fringe-field capacitor electrode for electrochemical device
US6545854B2 (en) * 2001-05-25 2003-04-08 Presidio Components, Inc. Fringe-field non-overlapping-electrodes discoidal feed-through ceramic filter capacitor with high breakdown voltage
US6661638B2 (en) * 2001-12-07 2003-12-09 Avaya Technology Corp. Capacitor employing both fringe and plate capacitance and method of manufacture thereof
US6737698B1 (en) * 2002-03-11 2004-05-18 Silicon Laboratories, Inc. Shielded capacitor structure
TW541646B (en) * 2002-07-11 2003-07-11 Acer Labs Inc Polar integrated capacitor and method of making same
JP2004146632A (ja) * 2002-10-25 2004-05-20 Denso Corp 半導体装置およびその製造方法
JP4371799B2 (ja) * 2003-12-19 2009-11-25 株式会社リコー 容量素子
JP4525965B2 (ja) * 2004-01-06 2010-08-18 ルネサスエレクトロニクス株式会社 半導体装置
US7335966B2 (en) * 2004-02-26 2008-02-26 Triad Semiconductor, Inc. Configurable integrated circuit capacitor array using via mask layers
US20070267733A1 (en) * 2006-05-18 2007-11-22 International Business Machines Corporation Symmetrical MIMCAP capacitor design

Also Published As

Publication number Publication date
US8076752B2 (en) 2011-12-13
TW200802792A (en) 2008-01-01
US8299575B2 (en) 2012-10-30
US8299576B2 (en) 2012-10-30
US20120092069A1 (en) 2012-04-19
JP2007258719A (ja) 2007-10-04
US8299577B2 (en) 2012-10-30
US20120092068A1 (en) 2012-04-19
JP4778464B2 (ja) 2011-09-21
US20120094463A1 (en) 2012-04-19
US20070215928A1 (en) 2007-09-20

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees