TWI341445B - Photoresist remover composition for removing modified photoresist of semiconductor device - Google Patents

Photoresist remover composition for removing modified photoresist of semiconductor device

Info

Publication number
TWI341445B
TWI341445B TW095132236A TW95132236A TWI341445B TW I341445 B TWI341445 B TW I341445B TW 095132236 A TW095132236 A TW 095132236A TW 95132236 A TW95132236 A TW 95132236A TW I341445 B TWI341445 B TW I341445B
Authority
TW
Taiwan
Prior art keywords
photoresist
semiconductor device
remover composition
removing modified
photoresist remover
Prior art date
Application number
TW095132236A
Other languages
English (en)
Other versions
TW200710611A (en
Inventor
Suk-Il Yoon
Seong-Bae Kim
Jong-Hyun Jeong
Hee-Jin Park
Byung-Uk Kim
Original Assignee
Dongjin Semichem Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dongjin Semichem Co Ltd filed Critical Dongjin Semichem Co Ltd
Publication of TW200710611A publication Critical patent/TW200710611A/zh
Application granted granted Critical
Publication of TWI341445B publication Critical patent/TWI341445B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/261—Alcohols; Phenols
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3263—Amides or imides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Emergency Medicine (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
TW095132236A 2005-09-02 2006-08-31 Photoresist remover composition for removing modified photoresist of semiconductor device TWI341445B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020050081628A KR101221560B1 (ko) 2005-09-02 2005-09-02 변성된 포토레지스트 제거를 위한 반도체 소자용 박리액조성물

Publications (2)

Publication Number Publication Date
TW200710611A TW200710611A (en) 2007-03-16
TWI341445B true TWI341445B (en) 2011-05-01

Family

ID=37817396

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095132236A TWI341445B (en) 2005-09-02 2006-08-31 Photoresist remover composition for removing modified photoresist of semiconductor device

Country Status (3)

Country Link
KR (1) KR101221560B1 (zh)
CN (1) CN1924710B (zh)
TW (1) TWI341445B (zh)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20100070087A (ko) * 2008-12-17 2010-06-25 삼성전자주식회사 포토레지스트 박리제 조성물 및 박막 트랜지스터 어레이 기판의 제조 방법
CN101799639A (zh) * 2010-04-01 2010-08-11 江阴市江化微电子材料有限公司 一种低温型水系正胶剥离液
CN101870932B (zh) * 2010-06-12 2012-02-29 山东大学 一种各向异性导电胶膜去除剂
CN101880609A (zh) * 2010-06-30 2010-11-10 国电光伏(江苏)有限公司 一种硅片清洗剂及其使用方法
CN103163745B (zh) * 2011-12-15 2015-09-02 中芯国际集成电路制造(上海)有限公司 光刻胶层的去除方法、晶体管的形成方法
CN102566333A (zh) * 2011-12-30 2012-07-11 江阴江化微电子材料股份有限公司 一种低温型水系正胶剥离液及其制备方法
KR101394133B1 (ko) * 2012-08-22 2014-05-15 주식회사 이엔에프테크놀로지 몰리브덴 합금막 및 인듐 산화막 식각액 조성물
CN103605269B (zh) * 2013-10-25 2016-11-23 马佳 用于半导体制造的感光膜清洗液
CN103616806B (zh) * 2013-10-25 2017-02-08 马佳 感光膜清洗液
KR102023052B1 (ko) * 2014-03-26 2019-09-19 동우 화인켐 주식회사 레지스트 박리액 조성물
US9514954B2 (en) * 2014-06-10 2016-12-06 Lam Research Corporation Peroxide-vapor treatment for enhancing photoresist-strip performance and modifying organic films
US10073351B2 (en) 2014-12-23 2018-09-11 Versum Materials Us, Llc Semi-aqueous photoresist or semiconductor manufacturing residue stripping and cleaning composition with improved silicon passivation
KR102228536B1 (ko) * 2017-03-10 2021-03-15 주식회사 엘지화학 포토레지스트 제거용 스트리퍼 조성물 및 이를 이용한 포토레지스트의 박리방법
CN108212914A (zh) * 2018-01-08 2018-06-29 蓝思科技（长沙）有限公司 一种3d玻璃菲林拆解后残胶的清洗工艺

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100390567B1 (ko) * 2000-12-30 2003-07-07 주식회사 동진쎄미켐 근적외선 분광기를 이용한 포토레지스트 박리공정제어방법 및 포토레지스트 박리액 조성물의 재생방법
CN100338530C (zh) * 2001-11-02 2007-09-19 三菱瓦斯化学株式会社 剥离抗蚀剂的方法
JP3516446B2 (ja) * 2002-04-26 2004-04-05 東京応化工業株式会社 ホトレジスト剥離方法
WO2003104900A2 (en) * 2002-06-07 2003-12-18 Mallinckrodt Baker Inc. Microelectronic cleaning compositions containing oxidizers and organic solvents

Also Published As

Publication number Publication date
TW200710611A (en) 2007-03-16
KR20070025444A (ko) 2007-03-08
CN1924710A (zh) 2007-03-07
KR101221560B1 (ko) 2013-01-14
CN1924710B (zh) 2011-06-15

Similar Documents

Publication Publication Date Title
TWI341445B (en) Photoresist remover composition for removing modified photoresist of semiconductor device
TWI349965B (en) Method of removing photoresist from semiconductor wafer
EP2082024A4 (en) COMPOSITIONS AND METHODS FOR REMOVING A PHOTORESISTANT AGENT FOR RECYCLING A SILICON GALETTE
EP2190967A4 (en) COMPOSITION AND METHOD FOR REMOVING AN ION IMPLANTATION PHOTORESIST
TWI320596B (en) Semiconductor device
EP1871331A4 (en) COMPOSITION FOR THE TREATMENT OF MENOPAUSE
EP1927138A4 (en) SEMICONDUCTOR DEVICE
EP2085825A4 (en) LIQUID COMPOSITION FOR REMOVING A PHOTO RESISTANCE AND POLYMER RESISTANCE
EP1953824A4 (en) SEMICONDUCTOR DEVICE
IL178187A0 (en) Aqueous solution for removing post-etch residue
TWI317974B (en) Silicon wafer cleaning method
EP1886377A4 (en) SEMICONDUCTOR COMPONENT
EP1938376A4 (en) SEMICONDUCTOR DEVICE
EP1906440A4 (en) SEMICONDUCTOR DEVICE
EP1976017A4 (en) SEMICONDUCTOR COMPONENT
EP1959492A4 (en) SEMICONDUCTOR COMPONENT
IL187121A0 (en) Compositions for the removal of post-etch and ashed photoresist residues and bulk photoresist
EP1886261A4 (en) SEMICONDUCTOR COMPONENT
EP1847878A4 (en) LIGHT-SENSITIVE COMPOSITION FOR REMOVING LIQUIDS
EP1847876A4 (en) REMOVAL SOLUTION OF PHOTOSENSITIVE PREPARATION
EP1909330A4 (en) SEMICONDUCTOR COMPONENT
EP1886355A4 (en) SEMICONDUCTOR COMPONENT
EP2064749A4 (en) SEMICONDUCTOR DEVICE
EP1839335A4 (en) SEMICONDUCTOR COMPONENT
TWI365491B (en) Composition for cleaning semiconductor device