TWI338923B - Plasma-assisted vapor phase treatment of low dielectric constant films using a batch processing ststem - Google Patents
Plasma-assisted vapor phase treatment of low dielectric constant films using a batch processing ststem Download PDFInfo
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- TWI338923B TWI338923B TW095135968A TW95135968A TWI338923B TW I338923 B TWI338923 B TW I338923B TW 095135968 A TW095135968 A TW 095135968A TW 95135968 A TW95135968 A TW 95135968A TW I338923 B TWI338923 B TW I338923B
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- dielectric film
- dielectric
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- compound
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
- H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31058—After-treatment of organic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76814—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
- H01L21/76826—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by contacting the layer with gases, liquids or plasmas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
- H01L21/76831—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers in via holes or trenches, e.g. non-conductive sidewall liners
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Formation Of Insulating Films (AREA)
- Chemical Vapour Deposition (AREA)
Description
1338923 九、發明說明: 【發明所屬之技術領域】 本發明係關於一種介電膜之處理方法與系統,更具體而言, 係關於一種批次處理方法及系統,處理複數片每一者皆具有介電 膜的基板以施行乾燥、修補、密封或清理該介電膜的至少一者。 【交叉參考之相關申請案】 本發明係關於同在審理中之2003年10月1〇日申請之美國專 利申請案編號10/682,196且代理人備忘錄編號為243414US之名為
「Method and system for treating a dielectric film」的申請案;同在 審理中之2005年2月18日申請之美國專利申請案編號11/〇6〇,352 且代理人備忘錄編號為266479US之名為「Method and system for treatingadidectdcfllm」的申請案;同在審理中之同曰申請之美國 專利申請案編號11/χχχ,χχχ且代理人備忘錄編號為277839US之名 ^ r Plural treatment step process for treating low dielectric constant 了」的^案;同在審理中之同日申請之美國專 =讀且代理人備忘錄編號為27觀us之名為「丁咖麵〇f cessi—
【先前技術】 如熟知半導體技藝者所知,内 之速度與效能進步的主要限_素。線 方式係藉著在製造IC_使用财則、化的一種 線電容。因此近年來,料發 撕來減少内連 介電_值的絕緣材料,糾二料來取代具有較高 膜被用於半導體裝置之金ϋ t ’低介電常數(low_k) 此外,為了更進-步地減與層内介電層。 的材料膜,即多孔低介電常數介4膜形成具有孔隙 4膜此類低介電常數(low-k)膜 ί βίΐί 1且=的旋塗介電陶方法或化學《目沈積 常數^料。 現行的半導造處理中極易採用低介電 即使低介電常數材料在丰土 發明人體認到此類膜亦提供d中可為,但本 向於比習知介電芦更不寄了 $夕挑我。百先’低介電常數膜傾 例如受到通常用二“=此在晶圓處理期間會受到損害, 在受到圖型化後,II此Μ二:f於具^反應性,尤其是 蒸氣反應及/或i理亏料吸收水份及/或與其他 此外,本發明人&忍到:。 之前將金屬線路圖型形成於介電i内。仏二;銅沈積 障層。然而,===,圖型的内表面上形成阻 孔隙及/或損傷受到裸露,引起且^=及常,叫膜的 阻障散,讀轉層綠附近之 電常數膜㈣述已_之低介 收κ其巧染物的影響。例如,在圖型 編獅網 【發明内容】 密封及/或清 其他題減少嫌输術中任何上述或 理介ΐί明之另—實施態樣為:處理介電膜以修補、 以減少阻障材料 本發明之更另—實施態樣為:處理介電膜 1338923 擴散文善阻障膜與介電臈之黏附?. 述或其他態樣。在電腦可讀媒體可提供任何上 (k)W-k)介電膜的處理系=,人。理,數片基板上之低介電常數 該複數片基板之一或多者:用以容納複數片基板, 電膜,其中該低介電有=於其上的低介電常數(l〇W-k)介 板;加熱系統,用以升高至其處二至'用以支撐該複數片基 連接至該處職顧板的溫度;及流齡配系統, 合物包含含CH之彳卜八也里化口物供給至該處理室,該處理化 原位雷將在占H 、& ,/、中x及y代表大於或等於1之整數。 '、電水生成系、冼,連接至該處理室並用以扁#卢—+ 漿及該處理化合物之片段 在3續理至内生成電 體分配系統及該電接至該加熱系統、該流 理化合物通入至處理室=時㈡統將處 熱複數片基板,以處理複數片基板上的低介電常加k) 在另-實施例中,闡述—種處理基 其包含:將複數片基板放置到批及: 基板 ',入包含含CxHy之化合物的處理化合物,中盆力 y ^表大於鱗於1之整數;形成賴;及使 美、 之该介電膜的至少-表面暴露至該賴,其中 板上 數低於Si〇2之介電常數。 ’、 兒、之)丨電常 【實施方式】 為了促進對本發明之全面瞭解及作為轉性目的 者’將在下列敘述中提出特定細節,如處理系統之特殊 及f種兀件的敘述。然而應瞭解:本發明可於脫離該 的其他實施例中施行。 二讨疋細卽 現參照附圖’在數個附圖中相似標號代表相同或相對應的部 1338923
件。圖1A至1E顯示了一種方法示意圖,在介電膜中形成圖型以 及處理介電膜中經蝕刻之圖型之裸露表面,以施行乾燥、修補、 密封或清理該些表面中的至少一者。此外’圖2顯示施行根據本 發明之一實施例之方法的流程圖100。如圖ΙΑ、1B及2中所示, 在步驟110中將介電膜20形成在基板1〇之上表面上,該基板可 包含或不包含額外層。該基板10可為半導體、金屬導體,或待將 介電膜形成於其上之任何其他基板。該介電膜之標稱介電常數值 小於Si〇2之介電常數(Si〇2之介電常數約為4,例如熱二氧化石夕之 介電常數範圍介於3.8至3.9)。在本發明之一實施例中,介電膜2〇 之介電常數可小於3.0,或其介電常數範圍介於1.6至2.7。 可使用化學氣相沈積(CVD)技術、旋塗介電(SOD)技術來形成 介電膜20,如東京威力科創股份有限公司(TEL)販售之Clean 丁以以 ACT 8 SOD及ACT 12 SOD塗佈系統所提供之技術。aean Track ACT 8 (200 mm)及ACT 12 (300 mm)塗佈系統提供s〇D材料之塗 佈、烘烤及硬化工具。可配置軌道系統,以處理1〇〇醜、2〇〇 300 _及更大尺寸之基板。熟知旋塗介電技術及CVD介電技蓺 者亦熟知其他將介電膜形成於基板上之系統與方法。 κ 例如’介電膜20可具有低介電常數(或i〇w_k)介電膜之特徵。 介電膜20可包含下列至少—者:有機、無機、及無機有機混^ 料此外”電膜20可為多孔或非多孔。例如,介電膜可包含使 用CVD 術來沈積之無機材料、矽系材料(如氧化有機矽材料, 或有機石夕氧烧)。例如,此類膜包含:由應用材料(ΑρρΜΜ
黑鑽石™」CVD有機矽酸鹽玻璃(〇SG)膜,或由 5料糸統(Novellus SyStems)公司所販售之「珊瑚tm」CVD 外,如,多孔介電膜可包含單相材料,如具有CH3鍵結之^ 矽系本體,在硬化處理期間該Ch3鍵結斷裂以產生小空 二卜、例如:多孔ί電膜可包含雙相材料,如具有有機材V(如 ,,體)之孔洞的二氧化石夕系本體,在硬化處理期間該 受到蒸發。或者’介電膜2〇可包含無機石夕酸鹽系材料,如使用、柳 4 8 1338923 技術所沈積之氫倍半石夕氧烧[hydrogen silsesquioxane,(HSQ)]或甲 基倍半石夕氧烧[methyl silsesquioxane(MSQ)]。例如’此類膜包含由 Dow Coming公司所販售之f〇x HSQ、由Dow Coming公司所販 售之XLK多孔HSQ及由JSR Microelectronics公司所販售之JSR LKD-5109。仍或者’該介電膜20可包含使用sod技術所沈積之 有機材料。例如’此類膜包含由Dow Chemical所販售之SiLK-I、 SiLK-J、SiLK-H、SiLK-D及多孔SiLK半導體介電質樹脂,及由 Honeywell 公司所販售之 FLARE™ 及 Nan〇 giass。 在步驟120中如圖ic所示,一旦製備介電膜2〇後,便將圖 ,化遮罩30形成於其上表面上。該圖型化遮罩3〇可包含利用微 微影技術形成於感光材料層(如光阻)中之圖型35,隨後使用顯影 劑而將感光材料之受照射區(在使用正光阻的案例中),或非受照& 區(在使用負光阻的案例中)移除。或者,該遮罩3〇可包含具 ,,膜(ARC)嵌於其中之雙層遮罩或多層遮罩,例如該抗反射^ 層、犧牲DU〇™層或可調變之抗侧 涵可使用軌道系統或㈣系統來形成該遮 或多層)。可配置軌道系統令其處理 m光阻、 ί 售之 ΜΑ018或ACT 12光阻塗佈及顯影夸 佈技術者應知將光阻_成於 描==成=何合適之習知步卿^ 35轉$所:丄吏】=電_刻可將遮罩圖型 如,當餘刻氧化物介電膜(如氧化梦Γ二氧貝=^之士特徵部40。例 機低介電常數介電膜(域化之有機石夕;’或當钱刻無 叱、cf4等,及惰性氣體、氧氣、明、版、 T主者。此外,蝕刻 9 1338923 x、y及z為整化合物之氣體(CxHyFz,其中 氫化合物氣體(CxHyFz,其中 肢成分可包含碳氫化合物或氟碳 外例如,當蝕刻有機低介如CH2F2或CHF3。此 含含氮氣體及含氫氣體中蝴氣體成分通常包 如上述之介細的轉性^技術。° L °介電質㈣處理者應知 形成於介電膜2〇中之同并丨: 、 蝕刻期間會受到損宝,,内的裸露表面(如側壁45),於 刻處理(即乾I虫刻或^化期^之損害或活化可導致在触 到污染物及/或化學品_。例如、罩==間表面吸收水分或受 數(lo w-k)介電膜極易受到$ 』处理期間多孔低介電常 電常數0—膜-般為3石=影響。通常,多孔低介 受到裸露,而容易吸收水在/ 一案例中’額外之石夕醇基 理具有裸露之低介電常數(丨ow^介電層’吾^難以處 染,尤其在圖型化步驟後。再者,低&電不^ 區受到活化及/或損害可導致介電常數=f(kn^k)材枓之表體 =或攸蝴物。,U二。,二察了到: 此外^钱刻夕孔低介電常數(1⑽_k)膜時, m上卿成_财產生孔= 在本發明之一實施例中處理受損宝^; 1或灰化處理後)。該介電膜之處理可包含清理介I ϋ包t >月理該介電膜之受損表面。此外,該、了 ?電膜。又,該介電膜之處理可包含修補該介 可包含密封該介電膜,藉此密封該介電膜之裸 電 '之處理 10 1338923 因此根據本發明之一實施例,在步驟M〇中處 如,可將該處理施行於介電膜20之側壁45。如圖]Ε中所示,此 類處理使經處理過之側壁50具有較佳之特性。
該清理處理可包含移除污染物或移除殘留物等之任一者或多 者。该乾燥處理可包含移除水分(例如%〇污染),因此可視為 -種清理處理。此外,修補處理可包含恢復或部分恢復介電常數 值以回復該介賴。例如,恢似值之特徵在於彻含碳材料(例 如,CH3)來填滿碳空乏位置。修補處理亦可包含 ㈣撕科攻縣社之轉細·㈣ J面鈍化,以形成受到曱石夕基包覆之鈍化表面。關於鈍化低介電 书數(low-k)表面之詳細說明可參照申請於2〇〇3年3月4日之美國
專利申請案號 10/379,984,案名為「METH〇d〇Fpassivating OF LOW DIELECTRIC MATERIALS IN WAFER PROCESSING」,代理人備忘錄編號SSI_〇35⑴。特將其全部内容 包含於此作為參考。此外例如,密封處理之特徵在於’:、使裸露表 面中之裸露孔洞密封。 於根據本發明之此處理製程期間,將介電膜2〇暴露至包含含 ^耳化合物之處理化合物中,其中下標Γχ」及「y」代表大於或 等於1之整數。在-實施例中,域助介電月莫2〇上之表面化學, 該處理化合物更包含含氮(N)及含氣(ci)化合物中之至少一者。例 如,該含CxHy化合物可包含含CH、含Ch2及含CH;化合物中之 至少一者。 圖3A及3B更顯不根據一實施例之該處理製程的範例。在圖 3A中,顯示多孔低介電常數(i〇w_k)介電膜142具有孔洞144,其 中在蚀刻或灰化處理後吾人觀察到:該些孔洞内之裸露表面已受 到損害。表面損害以懸鍵(dangling bond) 146的方式顯現,而該懸 鍵如OH位置可魏水氣(即邮)。現參照圖3B,在該介電膜暴 露於包含含CxHy化合物(如CH3)之處理化合物中的期間,該處理 Ϊη程、理孔洞144以移除〇H及其他殘留物、藉著以叫(如 八ir®、〇H及懸鍵146來修補孔洞之裸露表面,以及藉著使含 =/ 148之CxHy(如CH3)黏附至靠近裸露孔洞144的介電膜142 洞144。該處理製程亦可藉著移除未鍵結為〇H位置的 2 =子來乾無膜。因此’處理過之低介電常數(1〇〜七)膜包含具 x y材料之表面區域,έ玄材料提供改善之物理性質予低介電當 膜’如實質上沒有污岐水氣、較少之賴,或在表面 =之搶封孔洞。表面區域中之,材料更提供了比不具 材料更低的介電常數。 y 現參照圖4A,該處理化合物包含矽烷結構15〇,該結構可呈 有所有有機官能基,如在使用六曱基二矽氮烷 /、 ^examethyldisilazar^HMDS)]之情況,或有機官能基及南化物 (、C卜Br等)之組合,其中鹵化物係連接至位置!至4中任何一 者0 現茶照圖4B,該處理化合物包含五價有機石夕化合物152,盆 中矽原子係配位於三角雙錐形結構中位置】、2、3、4及5之5 ;|固 配位中。通常,此類化合物!52為在一或多個位置卜5處配有齒素 原子之陰離子,如在使用二氟三曱基矽酸鹽陰離子 [_110_’丨〇1她>%1丨酸如丨011]之情泥。當結構152為陰離子時,化 5物152亦包含—合適之陽離子,如鈉、鉀或任何其他有機或益 機之陽離子(未顯示)。 … ,、現參照圖4C,該處理化合物包含矽氮烷結構154,可將其描 述為.具有兩錢㈣基之官能基配位至胺之氮原子上的胺結 構’如使用六曱基二矽氮烷[丨lexamethy丨dis丨lazane (HMDS)]的情況。 圖4D之反應序次(1)中顯示六甲基二矽氮烷 u [hexamethyldisilazane (HMDS)]與介電材料之表面上的矽烷醇官能 基反應,而反應序次(2)中顯示三曱基二矽氮烷[trimethykJisilazane (TMDS)j|^介電材,料之表面上的石夕烧醇官能基反應。應注意:三甲 基二矽氮烷[trimethyldisilazane(TMDS)]為反應序次⑴之產物,其 1338923 ^可根據反應序次(2)而與低介電常數(1〇w_k)材料之表面上的石夕烷 酵反應。因此根據本發明之一實施例,六曱基二矽氮烷 [hexamethyldisilazane (HMDS)]為優異之處理化合物。 圖4E顯示介於矽烷醇官能基53以及介電材料之表面51上的 甲矽烷官能基55間的位阻。應注意:曱矽基官能基55極大且可 實際上提供保護阻障予矽烷醇官能基53。因此,通常無法將介電 • 材料之整個表面或表體區完全甲矽基化。然而,預處理介電材料 時,一般認為表面51上絕多數之矽烷醇官能基53會由甲矽烷官 ‘能基55所取代。 或者,該處理化合物可包含至少下列一種:六曱基二矽氮烷 看[hexamethyldisilazane (HMDS)]、三曱基二矽氮烧 [trimethyldisilazane (TMDS)]、三曱基氣矽烷[tdmethyichbr〇siiane (丁1^8)]、三氣曱基矽烧[1;七111〇脑16%15如此(丁0\48)]、1,3-二笨 基-1,1,3,3-四曱基二石夕氮烧[(:6%81(0^3)2]21^(或 l,3-Diphenyl-l,l,3,3-tetramethyldisilazane)、間第三丁基-ΐ,ι_二曱基 -1-(2,3,4,5-四曱基-2,4-環戊二烯-]-基)矽烷胺(:15]929抓汊或 N-tert-Butyl-1,1-dimethyl-1-(2,3,4,5-tetramethyl-2,4-cyclopentadien-1 -yl)-silanamine)、二甲胺(CH3)2NH (或 Dimethylamine)、3-氨丙基 三乙氧基矽烷H2N(CH2)3Si(OC2H5)3 (或 _ 3-Aminopropyltriethoxysilane)、四曱基環四矽氧;!:完(CH4SiO)4(或 TMCTS、或 tetramethylcyclotetrasiloxane)及八曱基環四石夕氧;):完 [(CH3)2SiO]4(或 OMCTS、或 octamethylcyclotetrasiloxane)。 在一例中,於處理孔洞尺寸不大於1 nm之多孔低介電常數 (low-k)介電膜時,該處理化合物可包含至少下列一者:HMDS、 TMDS 及二甲胺(CH3)2NH (或 Dimethylamine)。在第二例中,於 處理孔洞尺寸不小於1 nm之多孔l〇w-k介電膜時,該處理化合物 可包含至少下列一者:1,3-二苯基-1,1,3,3-四曱基二矽氮烷 [C6H5Si(CH3)2]2NH、間第三丁基,1,1-二曱基-1-(2,3,4,5_四甲基-2,4-環戍二烯-1-基)矽烷胺Cl5H29NSi及3-氨丙基三乙氧基矽烷 13 1338923 H2N(CH2)3Si(OC2H5)3(或 3-AminopiOpykdethoxysilane)。’ 或者在第 三例中’將介電膜暴露於第一處理化合物中持續第一段時間,第 一處理化合物如至少下列一者:HMDS、TMDS及二甲胺 (CH;〇2NH (或Dimethylamine),並將介電膜暴露於第二第處理化合 物中持續第二段時間,該第二處理化合物如至少下列—者:13_ 二苯基-1,1,3,3-四甲基二矽氮烷[C6H5Si(CH3)2]2NH、間第三丁基 , -U-二曱基-l-(2,3,4,5-四曱基-2,4-環戊二烯小基)石夕烷胺Ci5H2&si ’及3-氨丙基三乙氧基矽烷H2N(CH2)3Si(OC2H5)3 (或 * 3-Aminopropyltriethoxysilane)。 或者,該處理化合物可包含至少下列一者:烷基矽烷(亦包含 • 烷氧基矽烷)、烷基矽氧烷(亦包含烷氧基矽氧烷)、芳基矽烧、臨 基石夕烧、環石夕氧烧、聚倍半石夕氧烧(polysilsesquioxane,PSS)、芳 基石夕氧烧、酿基梦氧烧或鹵素砍氧烧,或任何其組合。 例如,該烧基石夕烧可包含: 六曱基二石夕氮烧[hexamethyldisilazane (HMDS)]、四曱基二石夕 氮烧[tetramethyldisilazane (TMDS)]、三曱石夕基二曱胺 [trimethylsilydimethylamine (TMSDMA)]、三曱石夕基二乙胺 [trimethylsilyldiethylamine (TMSDEA)]、N-三甲石夕基-α米〇坐 [N-trimethylsilyl-imidazole (TMSI)]、曱基三曱氧基石夕:):完 _ [methyltrimethoxysilane(MTMOS)]、乙稀基三曱氧基石夕;!:完 [vinyltrimethoxysilane(VTMOSXI、三甲基氯石夕:!:完 [trimethylchlorosilane (TMCS)]、二甲石夕基二甲胺 [dimethylsilyldimethylamine (DMSDMA)]、二甲石夕基二乙胺 [dimethylsilylcUethylamine (DMSDEA)]、雙(二曱胺基)曱石夕:):完 [bis(dimethylamino)methyl silane (B[DMA]MS)]、雙(二甲胺基)二曱 石夕烧[bis(dimethylamino)dimethyl silane (B[DMA]DS)]、二曱胺基五 甲基二石夕;!:完[dimethylaminopentamethyldisilane (DMAPMDS)]、二曱 胺基二曱基二石夕烧[dimethylaminodimethyldisilane (DMADMDS)] ' disila-aza-cyclopentane (TDACP) > 14 1338923 disila-oza-cyclopentane (TDOCP)、三乙基氣石夕烧[triethylchlorosilane (TECS)]、四曱氧基石夕少完[tetramethoxysilane (TMOS)]、二曱基二曱 氧基石夕烧[出11161;1^1(^11^1;110乂}^此116(〇]\4〇]\4〇8)]、四乙氧基石夕;):完 [tetraethoxysilane (TEOS)]、
曱基三乙氧基石夕烧[methyltriethoxysilane (MTEOS)]、二曱基二 乙氧基石夕烧[dimethyldiethoxysilane (DMDEOS)]、乙稀基三乙氧基 石夕烧[vinyltriethoxysilane (VTEOS)]、三曱基曱氧基石夕烧 [trimethylmethoxysilane (TMMS)]、三曱基乙氧基石夕;):完 [trimethylethoxysilane(TMES)]、三曱矽院醇[trimethylsilanol (TMS-OH)]、雙(三曱氧基曱矽基)己烷 [bis(trimethoxysilyl)hexane]、雙(三曱氧基曱石夕基)辛烧 [bis(trimethoxysi丨yl)octane]、雙(三曱矽基曱基)二曱氧基矽烧 [bis(trimethylsilylmethyl)dimethoxysilane]、雙三甲氧基曱石夕基乙烧 [bistrimethoxysilylethane]、環己基曱基二曱氧基石夕烧 [cyclohexylmethyldimethoxysilane]、環己基三曱氧基石夕烧 [cyclohexyltrimethoxysilane]、二環戊基二曱氧基石夕烧 [dicyclopentyldimethoxysilane]、二異丁基二曱氧基石夕烧 [diisobutyldimethoxysiiane]、二異丙基二曱氧基石夕烧 [diisopropyldimethoxysilane]、二甲基二曱氧基石夕烧 [dimethyldimertioxysilane]、六癸基三甲氧基石夕烧 [hexadecyltrimethoxysilane]、辛基二曱基甲氧基石夕烧 [octyldimethylmethoxysilane] ' 三曱氧基矽烷[trimethoxysilane]、三曱基曱氧基石夕烧 [trimethylmethoxysilane]、三(二甲基矽氧基)乙氧基矽烷 [tris(dimethylsiloxy)ethoxysilane]或任何其組合。 例如,該烷基矽氧烷可包含: (3-縮水甘油_基丙基)五曱基二石夕氧烧 [(3-glycidoxypropyl)pentamethyldisiloxane]、l,l,l,3,3,5,5-七甲某二 矽氧烧[1,1,1,3,3,5,5-1^口(&1116【]^111^1〇\&1^]、1,1,1,5,5,5-六甲美二矽 15 1338923 氧院[l,l,l,5,5,5-hexamethyltrisik)xanel、1,1,3,3,5,5,7,7-八曱基四石夕 氧烧[1,1,3,3,5,5,7,7-octamethyltetrasiIoxane]、1,1,3,3,5,5-六曱基三 石夕氧烧[1,1,3,3,5,5-1"^311161;11>41;1知1〇父3时]、1,1,3,3-四環戊基二氣二 石夕氧烧[1,1,3,3-tetracyclopentyldichlorodisiloxane]、1,1,3,3-四乙氧基 -1,3-二曱基二石夕氧:):完[1,1,3,3七的6111〇\}/-1,3-(101^1:11乂1(^1〇父311€]、 1,1,3,3_四異丙基-1,3-二氣二矽氧烷 [1,1,3,3-tetraisopropy 1-1,3-dichlorodisiloxane]、],1,3,3-四異丙基二石夕 氧少完[l,l,3,3-tetraisopropyldisiloxane]、1,1,3,3-四曱基-1,3-二乙氧基 二石夕氧院[1,1,3,3七1;1拙16出>/1-1,3-(1161;11〇\>^511〇\2116]、1,1,3,3-四曱 基二石夕氧烧[l,l,3,3-tetramethyldisiloxane]、1,3-雙(2-胺基乙胺基甲 基)四甲基二石夕氧烧 [1,3-bis(2-aminoethylaminomethyl)tetramethyldisiloxane]、1,3-雙(3-丙胺基)四曱基二矽氧烷 [l,3-bis(3-aminopropyl)tetramethyldisiloxane]、1,3-雙(氯甲 基)-1,1,3,3-四(三曱基矽氧基)二矽氧烷 [1,3-bis(chloromethyl)-1,1,3,3-tetrakis(trimethylsiloxy)disiloxane] ' 13-雙(氣丙基)四曱基二矽氧烷 [1,3-bis(chloropropyl)teti.amethyldisiloxane]、1,3-雙(縮水甘油越基丙 基)四甲基二矽氧烷 [l,3-bis(glycidoxypropyl)tetramethyldisiloxane]、1,3-雙(經丁基)四曱 基二石夕氧烧[1,3七丨5(11}^1'〇\71)111^1批如11161;11丫1(^1〇切11^]、1,3-雙(經 丙基)四曱基二矽氧烷 [l,3-bis(hyd丨Oxypropyl)tetramethyldisiloxane]、1,3-雙(三曱基石夕氧 基)-1,3-二曱基二矽氧烷 [】,3-bis(trimethylsiloxy)-1,3-dimethyldisiloxane]、1,3·二丙稀基四(三 曱基矽氧基)二矽氧烷 [l,3-diallyltetrakis(trimethylsiloxy)disiloxane]、1,3-二丙稀基四甲基 —石夕氧烧[1,3-diallyltetramethyldisiloxane]、1,3-二氣四曱基二石夕氧 燒[l,3-dichlorotetramethyldisiloxane]、1,3-二乙基四曱基二石夕氧烧 16 1338923 [l,3-diethyltetramethyldisiloxane]、1,3-二乙快基四甲基二石夕氧燒 [l,3-diethynyltetramethyldisiloxane]、1,3-曱基四曱氧基二石夕氧燒 [l,3-methylteti’aniethoxydisiloxane]、1,3-二辛基四曱基二石夕氧貌 [l,3-dioctyltetramethyldisiloxane]、1,3-二乙稀基-1,3-二曱基-13-二 氣二石夕氧烧[1,3-(^^^1-1,3-(1丨11^1;11;/1-1,3-出〇11丨〇1.〇出8丨1(^31^]、1,3-二 乙稀基四乙氧基二石夕氧烧[1,3-(^丨}^61;1批1;11〇\>/(^丨1〇\&116]、1,3-二乙 稀基四曱基二石夕氧烧[l,3-divinyltetramethyldisiloxane]、1,5-二氣六 甲基三石夕氧烧[l,5-dichlorohexamethyltrisiloxane]、1,5-二乙烯基六 甲基三石夕氧烧[1,5-<^丨1^11^^1加1%11;1^1〇仙116]、1,7-二氣八曱基四 石夕氧烧[l,7-dichloiO〇ctamethyltet;rasiloxane]、1-丙稀基-1,1,3,3-四曱 基二石夕氧烧[1-3取丨_1,1,3,3七1;1.31加出}^1此丨1〇^116]、2-[甲氧基(聚乙 烯氧基)丙基]七曱基三矽氧烷 [2-[1加1;11〇父乂(卩〇卜61;11}^11^〇\>^)1'〇口>4]116卩1冱11^1;11}^1:1^1〇\3116]、3,5-雙 (氣曱基)八甲基四矽氧烷 [3,5-bis(chloromethyl)octamethyltetrasilox:ane]、3-[經基(聚乙稀氛基) 丙基]七曱基三矽氧烷 [3-[hydroxy(p〇iyethyieneoxy)propyl]hetamethyltrisiloxane]、3-胺丙 基五甲基二石夕氧烧[3-aminopropylpentamethyldisiloxane]、3-氯曱基 七甲基三石夕氧炫[3-chloromethylheptamethyltrisiloxane]、3-辛基七曱 基二石夕氧烧[3-octylheptamethyltrisiloxane]、雙(3-氣異丁基)四曱基 一石夕乳烧[bis(3-chloiOisobutyl)tetramethyldisik)xane]、雙(氣曱基)四 曱基二石夕氧烧[bis(chloromethyl)l;etramethyldisiloxane]、雙(氰丙基) 四曱基二石夕氧院[bis(cyanopropyl)tetramethyldisiloxane]、雙(十三氟 -1,1,2,2-四羥辛基)四曱基二矽氧烷 [bis(ti.idecafluoro-1,1,2,2-tetrahydrooctyl)tetramethyldisiloxane]、雙 (三氟丙基)四曱基二矽氧烷 [bis(trifluor〇pr〇pyl)tetramethyldisiloxane]、雙[(雙環庚烯基)乙基]四 曱基一石夕氡院[bis[(biscycloheptenyl)ethyl]tetramethyldisiloxane]、雙 _2_[3,4-(環氧基環己基)乙基]四曱基二矽氧烷 17 1338923 [bis-243,4-(epoxycyclohexyl)ethyl]tetramethyldisiloxane]、氣甲基五 曱基二石夕氧烧[chloromethylpentamethyldisiloxane]、十甲基環五石夕 氧烧[decamethylcyclopentasiloxane]、十曱基四石夕氧烧 [decamethyltetrasiloxane]、二乙稀基四(三甲基石夕氧基)二石夕氧垸 [divinyltetrakis(trimethylsiloxy)disiloxane]、十二曱基環六石夕氧烧 [dodecamethylcyclohexasiloxane]、十二曱基七石夕氧烧 [dodecamethylpentasiloxane]、六乙基二石夕氧烧 [hexaethyldisiloxane]、六曱基二矽氧烷[hexamethyldisiloxane]、六 乙稀基二石夕氧烧[hexavinyldisiloxane]、八曱基三石夕氧;):完 [octamethyltrisiloxane]、五曱基二矽氧烷[pentamethyldisiloxane]、 十四甲基六石夕氧;):完[tetradecamethylhexasiloxane]或其任何組合。 例如,芳基矽烷可包含: 苯曱基三乙氧基石夕烧[benzyltriethoxysilane] '二-(對曱笨基)二 曱氧基石夕烧[di-(p-tolyl)dimethoxysilane]、二苯基二乙氧基矽烷 [diphenyldiethoxysilane]、二苯基二經基石夕烧 [diphenyldihydroxysilane]、二苯基二曱氧基石夕;t完 [diphenyldimethoxysilane]、二笨基曱基乙氧基石夕院 [diphenylmethylethoxysilane]、對-雙(三曱氧基曱矽基曱基)苯 [p-bis(trimethoxysilylmethyl)benzene]、苯基二曱基乙氧基石夕烧 [phenyldimethylethoxysilane]、第三丁基二苯基甲氧基矽烷 [t-butyldiphenylmethoxysilane]、三苯基乙氧基石夕烧 [triphenyldethoxysilane]、三苯基矽醇[triphenylsilanol]、乙烯基二苯 基乙氧基矽烷[vinyldiphenylethoxysilane]、二笨曱氧基二乙醯氧基 石夕烧[dibenzyloxydiacetoxysilane]、苯基乙酸氧基三曱石夕烧 [phenylacetoxytrimethylsilane]、苯基二曱基乙醯氧基石夕烧 [phenyldimethylacetoxysilane]、苯基三乙酿氧基石夕烧 [pheny ltriacetoxysilane]或其任何組合。 例如,酿基石夕烧可包含: 雙三曱矽基尿素[此11*^1^1^15办11^巳(13丁81])]、雙(三曱矽基) 18 1338923 乙酿胺[bis(trimethylsilyl)acetamide (BSA)]、雙(三曱·石夕基)三氟曱基 :Si^$[bis(trimethylsilyl)trifluoiOmethylacetamide(BSTFA)]、:L 酿乙稀基石夕烧[triacetylvinylsilane (TAVS)]、N-曱基-N-三曱石夕基-三 就乙酿胺[N-methyl-N-trimethylsilyl-trifluoroacetamide (MSTFA)]、 N-甲基-N-第三丁基二曱矽基-三氟乙醯胺 [N-methyl-N-tert-butyldimethylsilyl-trifluoroacetamide (MBDSTFA;)]、N-甲基-N-三曱矽基·七氟異丁酰胺 [N-methyl-N-trimethylsilyl-heptafluorobutyi.amide (MSHFBA)]、乙酿 〜 氧基三曱石夕烧[acetoxytrimethylsilane (TMAS)]、3-三氟乙醯氧基丙 基三曱氧基石夕烧[3-trifluoiOacetoxypropyltrimrthoxysilane]、乙酿氧 籲 基乙基二曱基氣石夕烧〇061;0\)^脚1(^01€脚1(:111〇1>05丨13收]、乙酿氧基 乙基曱基二氣石夕烧[acetoxyethylmethyldichlorosilane]、乙酿氡基乙 基三氣石夕烧[acetoxyethyltrichlorosilane]、乙酿氧基乙基三乙氧基石夕 :!:完[acetoxyethyltriethoxysilane]、乙醯氧基乙基三曱氧基石夕坑 [acetoxyethyltrimethoxysilane]、乙醯氧基曱基二曱基乙醯氧基矽烷 [acetoxymethyldimethylacetoxysilane]、乙醯氧基曱基三乙氧基石夕烧 [acetoxymethyltdethoxysilane]、乙醯氧基甲基三甲氧基石夕烧 [acetoxymethyltrimethoxysilane]、乙醢氧基甲基三曱石夕统 [acetoxymethyltrimethylsilane]、乙醯氧基丙基曱基二氣矽烷 φ [acet〇xypr〇pylmethyldichloiOsilane]、二曱基二乙醯氧基矽烷 [dimethyldiacetoxysilane]、二第三丁基二乙醯氧基矽烷 [di-t-butyldiacetoxysilane]、乙基三乙醯氧基矽烧 [ethyltriacetoxysilane]、曱基三乙醯氧基矽烧 [methyitriacetoxysilane]、四乙醯氧基矽烷[tetraacetoxysilane]、四(三 氟乙酿氧基)石夕坑扣如1<^如£111〇1.(^61〇\>^化1^]、三乙基乙||氧基 矽烷[triethylacetoxysilane]、乙烯基曱基二乙醯氧基矽烷 [vinylmethyldiacetoxysilane]、乙烯基三乙醯氧基矽烧 [vinyltriacetoxysilane]、二苯甲氧基二乙醯氧基矽烷 [dibenzyloxydiacetoxysilane]、苯基乙醯氧基三曱基矽烷 19 1338923 [phenylacetoxytrimethylsilane]、苯基二曱基乙醯氧基矽炫 [phenyldimethylacetoxysilane]、苯基三乙醯氧基石夕烧 [phenyltriacetoxysilane]或其任何組合。 例如,環矽氧烷可包含: 1,3,5,7-四曱基環四矽氧烷
[l,3,5,7-tetramethylcyclotetrasiloxane]、七曱基環四石夕氧院 [heptamethylcyclotetrasiloxane]、六乙基環三石夕氧炫 [hexaethylcyclotrisiloxane]、六甲基環三矽氧烧 [hexamethylcyclotrisiloxane]、八曱基環四石夕氧烧 [octamethylcyclotetrasiloxane]、五曱基環五石夕氧烧 [pentamethylcyclopentasiloxane]、五乙烯基五甲基環五矽氧烷 [pentavinylpentamethylcyclopentasiloxane]、四乙基環四矽氧烷 [tetraethylcyclotetrasiloxane]、六笨基環三矽氧;):完 [hexaphenylcyclotrisiloxane]、八笨基環矽氧烧 [octaphenylcyclotetrasiloxane]、(乙醯氧基乙基)七曱基環四矽氧烷 [(acetoxyethyl)heptamethylcyclotetrasiloxane]、四(二苯基磷乙基)四 曱基環四矽氧烷 [tetraskis(diphenylphosphinoethyl)tetramethylcyclotetrasiloxane]或任 何其他組合。
例如,聚倍半矽氧烷(PSS)可包含: 八曱基聚倍半石夕氧烧[octamethyl silsesquioxane]、十曱基聚倍 半石夕氧烧[0^311^11丫15丨1565911丨〇\3116]、八乙稀基聚倍半石夕氧炫1 [octavinylsilsesquioxane]、十乙烯基聚倍半矽氧烷[decavinyi silsesquioxane]、八甲氧基聚倍半矽氧烷[octamethoXy silsesquioxane]、十曱氧基聚倍半矽氧烷[decameth〇xy silsesquioxane]、氮丙基異丁基-pss[chloropropylisobutyl-PSS]或其 任何組合。 例如’芳基矽氧$完可包含: 1,1,3,3-四苯基二甲基二矽氧烷 20 1338923 [l,l,3,3-tetraphenyldimethyldisiloxane]、1,1,3,5,5-五笨基-1,3,5-三甲 基三石夕氧烧[1,1,3,5,5-卩61^卩11611)/1-1,3,5-11丨11^11>^1^1〇\3116]、 1,1,5,5-四苯基-1,3,3,5-四曱基三矽氧烷 [l,l,5,5-tetraphenyl-l,3,3,5-tetramethyltrisiloxane]、1,3-二氯-1,3,二 笨基-1,3-二曱基二矽氧烷 [l,3-dichloro-l,3-diphenyl-l,3-dimethyldisiloxane]、1,3-二氣四笨基 二石夕氧烧[1,3-(1丨。111〇1>(^1;瓜口1161^1(1丨5丨1〇\&116]、1,3-二苯基-1,1,3,3-四 (二甲基矽氧基)二矽氧烷 [1,3-diphenyl-1,1,3,3-tetrakis(dimethylsiloxy)disiloxane]、1,3-二笨基 -1,1,3,3-四曱基二矽氧;):完 鲁[l,3-diphenyl-l,l,3,3-tetramethy]disiloxane]、1,3-二乙烯基-1,3-二苯 基-1,3-二曱基二矽氧烷 [l,3-divinyl-l,3-diphenyl-l,3-dimethyldisiloxane]、1,4-雙(三曱氧基 甲石夕基乙基)苯[1,4-此(出1!^110\}^1}^1%1片611261^]、1,5-雙(縮水甘 油醚基丙基)-3-苯基-1,1,3,5,5-七曱基三矽氧烷 [l,5-bis(glycidoxypropyl)-3-phenyl-l,l,3,5,5-heptamethyltrisiloxaneJ 、1,5-二乙烯基-3,3-二笨基-1,1,5,5-四甲基三矽氧烷 [l,5-divinyl-3,3-diphenyl-l,l,5,5-tetramethyUrisiloxane]、1,5-二乙稀 基-3-苯基七甲基三矽氧烷 馨 [l,5-divinyl-3-phenylpentamethyltrisiloxane]、3,5-二苯基八甲基四石夕 氧烧[3,5-diphenyloctamethyltetrasi丨oxane]、3-苯基-1,1,3,5,5-七曱基 三石夕氧烧[3-卩11611)4-1,1,3,5,5-116卩1311^1%11;1^1〇\&1^]、3-笨基七曱基 三石夕氡烧P-phenylheptamethyltrisiloxane]、雙(間丙稀基苯基二甲石夕 基辛基)-四曱基二矽氧烷 [bis(m-allylphenyldimethylsilyloctyl)-tetramethyldisiloxane]、雙(七氣 苯基二曱氧基石夕烧[bis(pentafluorophenyldimethoxysilane)]、二乙: 基四笨基二石夕氧:):完[divinyltetraphenyldisiloxane]、六苯基二砂氡;):完 [hexaphenyldisiloxane]、六苯基環三矽氧烷 [hexaphenylcyclo1;risiloxane]、1,3-雙[(丙烯酿曱基)苯乙基]四甲基二 21 1338923 石夕氧烧[1,3-Ιή8[(&(:Γγ1οιτ^1ιγ1)ρ1ιεηε1;1ιγ1]ίε1;ΓαΓηε1%1(1Μ1οχ&ηε]、八笨 基環四石夕氧烧[octaphenylcyclotetrasiloxane]、(乙醢氧基乙基)七曱 基環四石夕氧烧[(acetoxyethyl)heptamethylcycloteti*asilo:xane]、四(二 笨基膦乙基)四曱基環四矽氧烷 [tetrakis(diphenylphosophinoethyl)tetramethylcyclotetrasiloxane]或其 任何組合。 例如,醯基矽氡烧可包含: • U,l,3,3-五甲基-3-乙醯氧基二矽氧烷 - [l,l,l,3,3-pentamethyl-3-acetoxydisiloxane]、1,3-雙(3-叛丙基)四曱 基二石夕氧烧[1,3-此(3-。31'1)〇父}^(^1批加11161;11}/1此11〇\3狀]、1,3-雙 • (3-曱基丙烯醯氧基)四(三曱基矽氧基)二矽氧烷 [1,3 -bis(3 -methy lacry loxypropy l)tetrakis(trimethy lsiloxy)disiloxane] 、1,3-雙(3-曱基丙稀臨氧基)四曱基二石夕氧烧 [1,3-bis(3,methacryloxypropyl)tetramethyldisiloxane]、11-乙醯氧基 Η 烧基二氣石夕烧[11心61;0\)/1111(^0>^1^111〇1*05似116]、2-[乙酿氧基 (聚乙稀氧基)丙基]七曱基三石夕氧;I:完 [2-[acetoxy(polyethyleneoxy)piOpyl]heptamethyltrisiloxane]、曱基丙 烯醯氧基五曱基二矽氧烷 [methacryloxypropylpentamethyldisiloxane]、1,3-雙[(丙稀酿曱基)苯 ^ 乙基]四曱基二石夕氧烧 [U-bisKacrylomethyOphenethyritetramethyMisiloxane]或其任何組 合0 例如,鹵素矽氧烷可包含: 六氣一石夕氧’j:完[hexachlorodisiloxane]、八氣三石夕氧烧 [octachlorotrisiloxane]或其任何組合。 根據μ知例,除了將介電膜暴露至處理化合物中之外,可 將基板加熱以協助或加速由暴露所促進之表面反應。基板溫度範 圍可自約。5〇 C至約45〇°c ’而較佳之基板溫度範圍自約100〇c 至約300 C。例如,基板溫度範圍可自約15〇 〇c至約〇c。 22 1338923 在一實施例中,除了將介電膜暴露至處理化合物中之外’可 將介電膜暴露至處理化合物的分子片段。處理化合物的分子片段 可藉由形成電漿並在電漿中解離處理化合物所產生。在一實施例 中’可原位產生分子片段,但卻對基板表面造成了極少的離子轟 擊。因此,在本實施例中產生電漿並不會導致通入處理化合物期 間的基板溫度下降《熟知此項技藝者應注意:愈直接地轟擊基板 表面可導致愈低的處理製程溫度。
圖5顯示處理系統17〇之方塊圖,該系統係用以處理複數片 基板上之介電膜’以在例如触刻處理或灰化後對介電膜施行清 理、乾燥、修補及密封中至少一者。處理系統170包含:處理室 172、流體分配系統174及控制器】76 ;流體分配系統174連接至 處理室172且用以將處理化合物通入至放置於處理室丨72中之基 板,而控制器176係連接至處理室172及流體分配系統174且用 以根據製程處方來控制處理系統17〇。此處所用之「流體」一詞係 可指液體、氣體或超臨界流體。
,一實施例中,處理系統17〇係用以利用處理氣體或不利用 處理氣體而將氣相之處理化合物通入複數片基板。例如,流體分 配系統174可包含用以供給载氣或惰性氣體(如氮氣)之載氣供給 系統及處理化合物之儲槽。流體分配系統174更可包含蒸氣輸送 系統,允許載氣汨汩流過處理流體之儲槽,並將處理化合物輸送 至用以暴露具有待處理之介電膜之複數片基板的處理室172。再 者,流體^配系統174更可包含溫度控制系統,係為了防止處理 化合物之蒸氣於蒸氣輸送系統中凝結,而用以升高蒸氣輸送 之溫度。處理室172更可包含基板支撐件,用以固定可靜止、 移或轉動之複數片基板。 此外’處理室172可包含加熱系統,用以加熱及/或控制 片〃基板的溫度,以在介電膜暴露至處理化合物時協助表面反應。 複數片基板的基板溫度範圍可自約5〇 〇c至約45〇 〇c,而 :
板溫度範圍自約100 〇C至約3〇〇。(:。 乂払疋I 23 1338923 此外,處理室172可包含原位電激 ^ 並使處理化合物產生分子解離。 成系、·'充,用以形成電漿 控制器Π6包含:微處理考、夺柃 包含D/A及/或A/D變頻器)。該數位敲可 處方來與系統m及m ίΓ=Γ ::/==絮程 之處理配方來與加m統及魏概±成^互動°。、“u存
rfA^t ^ ?J 1 176 ^ ~^^ 卢Γ ’/ 卜的控制器/電腦獲得設定及/或組態資訊。 在圖5 t ’雖然顯不單獨的處理構件(172及m),但此 本=所必須。處理系統17〇可包含任何數目之處理構件,而汽 理構件除工獨立的處理構件外可具有任何數目之目關控制器。处 。。控制器176可用以配置任何數目的構件(172及 器176。可收集、提供、處理、儲存及顯示來自處理構件的資^ 控制f 176可包含數個應用程式來控制一或多個處理構件。例如, 控制器176可包含圖型化使用者介面(⑽)元件(未圖示),可提供 易於使用之介面而使使用者能夠監視及/或控制-或多個處理構、 處理系統170亦可包含壓力控制系統(未圖示)。壓力控制系統 可連接至處理室172,但此並非必須。在另外的實施例中,壓力控 制系統可有不同用途及連接至不同處。壓力控制系統可包含一^ 多,壓力閥(未圖示),以排空處理室Π2及/或調整處理室172内 之壓力。或者,壓力控制系統亦可包含一或多個泵浦(未圖示)。例 如’了使用一個栗浦來增加處理室内的壓力’而使用另一粟浦來 排空處理室Π2。在另外的實施例中,壓力控制系統可包含密封件 以密封處理室。 此外’處理系統170可包含排放控制系統。排放控制系統可 24 1338923 2至處理室172 ’但此並非必須。在另外的實關巾,排放控制 隹^可有途及連接至;^同處。賊控⑽統可包含廢氣收 果官(未圖示)’且可用以自處理流體移除污染物。或者,排放 糸統可用以回收處理流體。 工 現翏照圖6 ’其係根據另一實施例之批次處理系統的方塊圖。 ^理系統包含批次處理系統201,以利用多步驟處理來處理複數片 =板。批次處理系統201包含:處理室21〇 ;處理管225,其具 藉由排放管280而連接至排放系統288之上端223,及緊密吉至 圓,形歧管202之罩盍227的下端224。排放管280自處理管225 =氣體排放至排放系統288,以在批次處理系統2〇1中維持預定之 ,力(例如,大氣或低於大氣之壓力)。基板支撐件235設置於 官225中,以類梯級方式(在垂直間隔處之各別水平面上)支 個基板(晶圓)240。基板支撐件235座落於轉盤226上,轉盤226 係固定於旋轉桿軸221上,而旋轉桿軸221貫穿罩蓋227 f i 驅動系統228(可包含電動馬達)來加以驅動。於處理期間轉盤I% 可方疋轉以改善整體膜均勻度,或者於處理期間轉盤可固定不 罩蓋227係固定於升降裝置222上,以將基板支撐件235 ^ 處理管225或自處理管225載出。當罩蓋227處於其最頂妒 置時,罩蓋227適於關閉歧管202之開口端。 、" 流體分配系統297係用以利用處理氣體或不利用處理氣體來 將一或多種處理化合物通入至處理室210。可圍繞著歧管2〇+2 複數條供給管線,以將複數種氣體經由氣體供給管線輸送至 管225。在圖6中,複數條氣體供給管線中僅顯示單—丄髀二玲 線245。在圖中顯示氣體供給管線245係連接至處理氣體= 通常處理氣體源294可供給處理基板240用之處理氣^入. 將膜沈積至基板240上用之氣體(如沈積含矽膜用之含石夕 刻基板240用之氣體;或氧化基板240用之氣體;或協助上^ 理化合物之氣體。電漿源295操作性地連接至處理室21〇 電漿源295可位於遠端’並可藉由氣體供給管線245來操作性地 25 1338923 ,接至處理室210。電漿源295係用以激勵來自氣體源2%之處理 氧體或處理化合物之至少一者,接續藉由流體分配系統297之氣 體供給管線245將受到激勵(解離)之氣體通入至處理管。例; 如,電,源295可為微波電漿源、射頻(RF)電漿源,或藉由射出 光所能量化之電漿源。在微波電漿源之案例中,微波能量可介於 約500瓦(W)至約5000瓦。例如,微波頻率可為2 45 GHz至8 3 GHz。在一例中,遠端電漿源可為由美國麻州Wiimingt〇niMKs 儀器公司所製造之AX7610型下游電漿源。
設置圓柱形熱反射器230以便於遮蓋處理管225。熱反射器 230具有知面加工之内表面,以抑制熱轄射由主加熱器Do、下加 熱器265、上加熱器215及排放管加熱器27〇作輻射'^熱。將σ ^冷卻水官道(未圖示)形成於處理室21〇之室壁中作為冷卻媒體 管道。 a 排放系統288包含真空泵浦286、收集器284及自動壓力〆告丨 器(APQ282。例如’纟空栗$ 286可包含泵抽速度能上至每 20000升(或更大)的乾式真空泵浦。在處理期㈤,可藉由流體分配 糸統297之氣體供給管線245將氣體通入至處理室21〇 ,並辨由 APC282來s周整處理壓力。收集器284可自處理室收集未 應之前驅物材料及副產物。 〃
處理監測系、统292 &含能夠即時作處理監測之感測器2乃 如該感測器275可包含MS、FTIR分光儀或粒子計數器。控 290包含微處理器、記憶體及數位輸入輸出接口,該數位輸二輸^ 接口能夠產生控制電壓,此控制電壓不但足以溝通和活化批次声 理系統201之輸入訊號,而且可監測來自批次處理系統2〇丨之g 出訊號。此外,控制器290連接至流體分配系統297 ;驅動^ 228 ;處理監測系統292 ;加熱器220、215、265及270 ;及排放
系統288 ’並與上述者交換資訊。可以DELLpRECiSi〇N WORKSTATION 610™ 來實施控制器 290。 亦可以普制途電腦、處理H、數位訊號處理科來施行控 26 1338923 制為290 ’使基板處理設備施行本發明之一 以對執行包含於可魏财之—或多個指令 =制器2%作回應。電腦可讀媒體或記憶體係用以=== 二教不所撰寫的程式指令’及用以容納資料結構、表幹、'己 匕處所述之資料。電腦可讀媒體為例如光碟、、軟 3、磁▼、磁光碟、PR0Ms ( EPR〇M、EEpR〇M、快=, ^M、S議、SDRAM或任何其他磁性媒體、光碟丄二 或任何其他光學媒體、打孔卡片、紙帶,或並他呈有別、π七样 實體媒體、載波(如下述)或任何其他電腦可H之、式樣之 控制器290可設置在批次處理系統2〇1之附近 或内部網路設置在批次處理系統2〇1之遠端:因此1 交換資料。控制_可連接至客戶端Ϊ
φ]ϋ- 29〇U*^ J 交換資料。或網際網路中之至少一種來 圖。广實f例之批次處理系統的簡化方塊 == 熱元r但加熱元件之數目可二 或配置錢合做喊,•目7之減’ 制。例如,多區域加轨哭可化來給予額外的輔助控 率,以=或負rc、、的溫至約母分鐘就的加熱升溫速 現蒼知1U ’根_-實施纖秘:欠處理线的簡化方塊 27 1338923 圖。批次處理系統401包含了許多血 一 系統201相同的特徵。然而,6中所示之批次處理 體注射系統,其包含複數條』更包含多區域氣 以藉由複數個氣體注射裳置44= 4D4;^445A、445B及秘C, 流提供至沿絲板切件235的複 446f來=理化合物 446A-C可包含—或多個 ^母—氣體注射裝置 口,孔口的尺十式八优射裝置的氣體注射孔 理室210之每i ^ 尺寸與分佈兩者可改變。任何流至處 合物的濃;體性質可改變或加以控制,例如處理化 現麥照圖9 ’根據另—實施例顯: 圖。批次處理系統5(M包含了許多盘卜、十=,_間化方塊 系統201相同的特徵。狄而,;匕中所示之批次處理 生成系站州,dr 處糸統501更包含原位電聚 :、、’’ ”有电源以及耦合至處理室210之反應管225 產f f阻抗匹配網路。例如,電源可包含^射步(RF) ί ΐ :經由電極555耦合至處理化合物。通常施加RF 月匕,至黾極555的頻率範圍自約〇·〗MHz至約2〇〇 MHz。可使用 配,路’藉由匹配RP產生器的輸出阻抗與電極及電黎的輸 入阻抗,來使輸送的能量最大化。在申請於2〇〇3年5月19曰且 ^告於丽年123 2日之日本專财請案號職ΚΗ·343017Α中 闡述了-概_位產生電漿味讀縣統,特將其所有内容 ,,於,作為參考。又,如圖8中所示,可使用一或多條氣體管 、,泉來將處理化合物通入至電極555附近。 應瞭解.在圖6、7、8及9中所示之批次處理系統2(π、301、 及501僅為例示性,尚可使用特定硬體之許多變化來施行本發 明,而該些變化係為本領域中具有通常知識者所瞭解。例如,在 圖6、7、8及9中之批次處理系統2〇1、3〇1、4〇1及5〇1可處理 任何尺寸之基板,例如2〇〇 mm基板、300 mm基板,或甚至更大 的基板。又,批次處理系統2〇卜3(Π、401及501可同時處理上 至約200片的基板,或更多。或者,處理系統可同時處理上至約 28 1338923 25片的基板。例如除了半導體基板(例如,石夕晶圓)外,該基板可 包含LCD基板、玻璃基板或複合半導體基板。 例如,在讓渡予東京威力科創股份有限公司的美國專利編號 5,0^5,200中敘述了一種例示性的蒸氣輸送_供給設備,特將其所有 内容包含於此作為參考。此外例如,例示性的蒸氣輸送-供給設備 可包含由東京威力科創股份有限公司所販售之TELF〇rmula⑧批次 處理系統。 在一實施例中,可利用一或多個處理步驟來處理一或多片基 板上的介電膜,以對該介電膜進行熱處理及化學處理。介電膜之 熱處理可包含對该介電膜進行退火,或乾燥該介電膜,以移除污 染物如水或其他揮發性之成分。介電膜之化學處理可包含清理該 介電膜、藉由恢復或部分恢復齡電叙介電常數來修補該介電 膜或密I试部分密封該介賴。例如在形賴介賴、姓刻處 理该介電膜、灰化該介電膜、研磨該介電膜或在備製電 間處理該介電膜後,可將該些處理步,n者 膜 ,裸露表面。在:實施例中,在通人處理化合物 水’以促進齡賴m u,料介 ^。=實施例中,在無歓情況下利用處理 丁子處理’接者進行第二處理,而該第二處理包含:利用 j冋的處理化合物來產生賴及/或通人另—處理化合物並 處 分謂或接續地通入不同的處理化合心 在化學處理制,衫驟處理t的每—處理化合物可 ΐίϊ成ί ’例如但不限制為:用以移除污染物、殘留物、硬化 =物、光阻、硬化光阻、_後殘留物、灰化後殘留物、= i 用以移除微粒的清理成分;用以乾燥薄膜、 乾城分;用以備製介電薄膜、金屬薄膜或其任何組合 29 1338923 ί 义用3随或部分恢復低介電常數(iQw-k)膜之介電常數的修 /以密封或部分密封介電膜或多孔膜的密封成分;或上 述者之任何組合。 〜i 八* Π用以清理介麵之處理化合物可包含_·含氧化合物、 Ιί或含iff物、含氣化合物、含鹵素化合物、碳氫化 I触σ,或任何上述材料之激勵後物種;或任何上述材料 心I if種上或任何上述材料之自由基。例如,處理化合物 二2二·!六軋、、氧自由基或ι自由基。介電膜之處理更可包含: “ Hi清理後、或於清理前及後,將淨化氣體通入至處理 體可包含情性氣體,如貴餘體。當修補(恢復或部 _介電_,纽化合物可包含任何上述化合物 處理化合封或部細^ J匕3任何上述化合物之任一者之蒸氣形熊。 物理系統中’處理化合物可包含非電漿之氣相混合 =’F /電聚。在化學處理製程(非電聚)中,將一或多片基 片其/ 暴I至處理化合物,同時可選擇性地加熱該一或多 介^昊^輔助化學處理製程(電漿)中,將—或多片基板上的 暴路至處理化合物及該處理化合物之分子片段,同時可選 擇性地加熱該一或多片基板。 、 夕,參照圖10,敘述一種使用複數處理步驟之製程來處理一或 的方法。物找含流糊,開始於步驟 怒I 基板上形成介賴,其巾該介電獻初始介電常 處理㈣,、,/Λ!數在步驟巾’將一或多片基板暴露至 含円ΐ / ί 施行魏個處理製程。該處理系統可包
3圖5、6、7、8及9中所示之任一處理系統。 C 以自ΐ H3HQ ^广行包含退火該―或多片基板的熱處理製程, ί曰Hi板上的介電膜移除揮發性成分。該熱處理可包 :性=;2片基板的溫度’同時將該一或多片基板暴露至 !·生乳體之狄中。例如,該溫度範圍可自約5G %至約 〇c, 30 1338923 車ίίϊ'ΐΐί 至約2〇〇°c。此外例如,該惰性氣體 可包含通人貝重乳體,例如氦氣、氬氣、氤氣等,或氮氣 含.二或多片基板上施行化學處理製程’包 ,片、板:該電 該〇膜;密封或部分密_ ^八上合。該處理化學品可包含上述之化 ΐ成二ϋ :者:卜例如,該溫度範圍可自約5G°C至約450 产U溫度犯圍自約100〇c至約。 ^含^或不包含賴,射電⑽於處理了 情械。當使用電漿輔助化學處理製程時,將 處理化合物及轉中之分子解離所產生之Ξ 在-例中,在侧處理、灰化處理或濕式清理處理 製程施行於介㈣上’複數個處理步驟製 膜、及修麵介電膜或密封該介電膜咬輔 在將薄膜沈積至介電層上剩 L 柄柯包含阻障層,用以防止金屬自金屬線及 L广2進人金狀後之介電㈣m-例巾,在電f處理 俾提升沈積於其上之__著性。^狀稞路表面, 並他鈍化低介電常數(low'k)介電表面的能力,並可盘 洲配’該其他處理步·如在氣相處理環境中針 =1匕後之介電介電層來移除名虫刻後殘留物(包含但未 ’’: 方疋聚合物抗反射包覆層及先聚合物)。 ° 一 麵’本發啊恢復或部分恢復介電材料於圖型化 )%層。σ人亦觀察到,本發明可密封或部分密封裸露的 1338923 多孑L表面 本發明之部分例示性實施例作詳細闡述 ΐ則===刻^匕來闡述低介電常數(_表面之損 彻彳一尽,χ月之教不並非僅限於此類損傷, 數(1⑽^介1膜之晶_其他處理或ί程所i成 知此項技藝者應注意:在不實f上脫雜湖闈述,但熟 的情況下,可心-ί祕本發明之新穎教示及優點 =:二例不性的實施例中進行許多的修改。例如,雖然 電膜損傷…雖然 中:” D 所有此絲改皆應包含於本發明之範轉 【圖式簡單說明】 理縣發攸—實關顯科麵之形成及處 圖。圖2係根縣發明之—實施_示介《之製造方法的流程 =3Α及3Β顯示介電膜之處理方法的示意圖。 獅、據本發日狀—實哪㈣來處理介電膜之 基反據本發日㈣—實施例顯示在介電材料中與轉 Ξ 電材料表社之轉基及@基_空間阻礙。 統的方塊^發明之―實施例齡處理介麵之批次處理系 本發明之另—實施例顯示處理介電膜之處理系統。 圖8^ ί本發明之另—實施例顯示處理介電膜之處理系统。 。根據本發明之另—實施麵示處理介電膜之處理系洗。 32 1338923 圖9係根據本發明之另一實施例顯示處理介電膜之處理系統。 圖10係根據本發明之一實施例顯示處理介電膜的方法流程 【主要元件符號說明】 10 :基板 20 :介電膜 30 :圖型化遮罩 35 :圖型 40 :特徵部 45 :側壁 50 :經處理過之側壁 51 :介電材料之表面 53 :矽烷醇官能基 55 :曱矽烷官能基 100 :流程圖 110 :步驟 120 :步驟 130 :步驟 140 ··步驟 142 :多孔低介電常數(low-k)介電膜 144 :孔洞 146 :懸鍵(dangling bond) 148 :分子團 150 :矽烷結構 152 :五價有機矽化合物 154 :矽氮烷結構 170 :處理系統 172 :處理室 33 1338923 174 •流體分配糸統 176 :控制器 201 :批次處理系統 202 :歧管 210 :處理室 215 :上加熱器
220 :主加熱器 220A :加熱元件 220B :加熱元件 220C :加熱元件 220D :加熱元件 220E :加熱元件 221 :旋轉桿軸 222 :升降裝置 223 :上端 224 :下端 225 :處理管 226 :轉盤 227 :罩蓋
228 :驅動系統 230 :熱反射器 235 :基板支撐件 240 :基板(晶圓) 245 :氣體供給管線 265 :下加熱器 270 :排放管加熱器 280 :排放管 282 :自動壓力控制器(APC) 284 :收集器 34 1338923 286 :真空泵浦 288 :排放系統 294 :氣體源 295 :電漿源 296 :氣體源 297 :流體分配系統 301 :處理系統 401 :處理系統 445A :氣體供給管線 445B :氣體供給管線 445C :氣體供給管線 446A :氣體注射裝置 446B :氣體注射裝置 446C :氣體注射裝置 501 :處理系統 550 :電漿生成系統 555 :電極 700 :處理流程圖 710 :步驟 720 :步驟 730 :步驟 740 :步驟
Claims (1)
1338923 \〇 申請專利範圍 =¾替換頁 至’用以容納該複數片基板,該複數片基板中的夕 ίίΐΐ件’連接至該處理室並用以支樓該複數片基板; 力:熱糸統:用以升高該複數片基板之溫度; 椒 統’連接至該處理室並用以將處理化合物供岸至 该處理室,該處靴合純含含cm至 於或等於1之整數; y 以口及丫代表大 ^位電漿生成系統,連接至該處理f並㈣在 生電漿及該處理化合物的分子片段;及 内產 工·?。。、連?至5亥加熱系統、該流體分配♦、統及該電漿生成 糸、洗,亚用以使該流體分配系統將該處理化合物通入至竽 口其r使ΐ電漿ΐ成系統產生電漿及使該加熱系統力;該複數 片土板丄以處理该稷數片基板上的該低介電常數介電膜,以密封 或部分魏該低介電常數介電賴裸絲面,並藉 化合物中的含碳材料來填滿碳空乏位置,恢復或部分 電常數介電賴介電常紐。 偏低j, 2·如申請專利範圍第1項之低介電常數介電膜的處理系统, 其中該流體分配祕包含用以將該處理化合物喊氣 該 處理室中的氣體分配系統。 3. 如申請專利細第2項之低介電常數介電膜的處统, 其中該處理室係用以容納1至200片基板。 4. 如申請專利範圍第2項之低介電常數介電膜的處理系統, J 36 99年10月5日修正替換頁 95135968 (無劃線) 更包含: ^ --- 泰將電漿源,連接至該處理室並用以激勵該處理化合物,其中該 龟漿係用以在該處理室之外部來激勵該處理化合物。 /、 ^如申請專利範圍第2項之低介電常數介電膜的處理系統, ,、中該原位電漿生成系統包含微波電漿源、射頰(RF)電浆源或使 用光照射之電漿源。 ^如申請專利範圍第2項之低介電常數介電膜的處理系統, 其中該流體分配系統更用以將該處理化合物供給予處理氣體。 7.如申請專利範圍第6項之低介電常數介電膜的處理系統, 其中該處理氣體包含惰性氣體。 8·如申請專利範圍第7項之低介電常數介電膜的處理系統, 更包含: 電漿源,連接至該處理室並用以激勵該處理化合物,1 電漿源係用以在該處理室之外部來激勵該處理化合物。 X 9.如申請專利範圍第2項之低介電常數介带 其中該基板战件至少可平減_ Γ後)1 處理系統, 10·如申請專利範圍第2項之低介電常數 統,其中該加齡統包含鋒域加齡备化的處理糸 11.如申請專利範圍第2項之低介電 , 統,其中該控制器係用以施行監測、,敕 包腠的處理系 温度、該處理化合《及該絲錢制該複數片基板之 者。 成糸統之能量中的一或多 1338923 99年10月5日修正替換頁 95135968(無劃線) ' 物之該分子片段,以作為施行下列至少匕該處理化合 =該低介電常數介電膜、乾燥該低介電常㈡理= 二 介電膜、及㈣或部料封該低介電介料數 13. 如申請專利範圍第丨項 統,其中該流體分配系統翻以供給;系 烧氧基魏、職魏烧、絲基魏垸、如垸基魏、 環石夕氧炫、聚倍半石夕氧烧(pss)、芳基 ^ 土夕垸、酿基魏、 矽氧烷或任何其組合。 氧兀、3&基矽氧烷、鹵素 14. 如申請專利範圍第2項之 =ί 流體分配系統係用以供給該3理系 物更包含含氮氣材料及含紐料之至少—者°物’ _理化合 15·如申請專利範圍第2項 統’其中該低介電常數介電膜所包含之^膜罝^的處理系 2.7的介電常數u 3 ;丨电馭具有範圍自1.6至 16.如申請專利範圍 ;少^低介電常數介電膜包含多 統,系 38 1338923 99年10月5日修正替換頁 1δ l L 95135968 (無劃線)、 統 物流量。 °Λ处里至之夕個區域内的該處理化合 膜,k9含一下ΪΪΪ膜的處理方法,用以處理複數片基板上之介電 複數,該複數片基板放置到批次處理系統中,該 數;"'板該”寬膜具有的介電常數係低於Si〇2之介電常 基板加熱步驟,加熱該複數片基板,同時將 Ί多者曝露於雜次處理系統中的惰性氣體環境中;土 /電漿生成步驟,利用連接至該批次處理系統 及處理化合物的分子片段,該處理化合茲ίϊ CxHy之化&物,其中x&y代表大於或等於丨之整數; ί=ί物通人步驟,將該處理化合物通人該批次處理系统; 基板暴硌步驟,將該複數片基板上之該介電 ^ 暴露至該電漿; 乂衣曲 密封步驟,密封或部分密封該介電膜的裸露表面;及 來殖復,21利用該處理化合物中的含碳材料 工真滿吸土乏位置,恢復或部分恢復該介電膜的介電常數值。 20.如申請專利範圍第19項之介電膜的處理方法,苴 板暴路步驟包含將該複數片基板上之該介電膜的至少—表面美 至,理化合物,該處理化合物包含烷基矽烷、烷氧基矽^、&基 矽氧烷、烷氧基矽氧烷、芳基矽烷、醯基矽烷、環矽氧烷、 半石夕氧烧(PSS)、芳基石夕氧烧、酿基石夕氧烧、齒素石夕氧垸或任何其 組合。 39 99年10月5日修正替換頁 95135968 (無劃線)' 21.如申請專利範圍第20項之介電膜的處理方法,其中該處 理化合物包含烷基石夕烷,烷基矽烷包含: 六曱基二石夕氮烧[hexamethyldisilazane (HMDS)]、四曱基二石夕 氮烧[tetramethyldisilazane (TMDS)]、三曱石夕基二曱胺 [trimethylsilydimethylamine (TMSDMA)]、三曱石夕基二乙胺 [trimethylsilyldiethylamine(TMSDEA)]、N-三曱石夕基-0米〇坐 [N-trimethylsily 1-imidazole (TMSI)]、曱基三甲氧基石夕烧 [methyltrimethoxysilane(MTMOS)]、乙稀基三曱氧基石夕烧 [vinyltrime1:hoxysilane (VTMOS)]、三曱基氯石夕院 [trimethylchlorosilane(TMCS)]、二曱石夕基二曱胺 [dimethylsilyldimethylamine(DMSDMA)]、二甲石夕基二乙胺 [dimethylsilyldiethylamine(DMSDEA)]、雙(二曱胺基)曱石夕烧 [bis(dimethylamino)methyl silane (B[DMA]MS)]、雙(二曱胺基)二甲 石夕烧[bis(dimethylamino)dimethyl silane (B[DMA]DS)]、二曱胺基五 曱基二石夕烧[dimethylaminopentamethyldisilane (DMAPMDS)]、二甲 胺基二曱基二石夕烧[dimethylaminodimethyldisilane (DMADMDS)] ' disila-aza-cyclopentane (TDACP) ' disila-oza-cyclopentane (TDOCP)、三乙基氯矽烷[triethylchlorosilane (丁£€8)]、四曱氧基石夕烧扣的〇^11〇\}^1^^〇[]\/[〇8)]、二曱基二曱 氧基矽烧[(1丨11^11}4(1丨111础〇\>^1&1^(0應]\108)]'四乙氧基石夕烧 [tctraethoxysilane (TEOS)]、曱基三乙氧基石夕娱) [methyltriethoxysilane (MTEOS)]、二曱基二乙氧基石夕烧 [dimethyldiethoxysilane(DMDEOSX)、乙稀基三乙氧基石夕烧 [vinyltriethoxysilane (VTEOS)]、三甲基曱氧基石夕烧 [trimethylmethoxysilane (TMMS)]、三甲基乙氧基石夕烧 [trimethylethoxysilane(TMES)]、三甲矽烷醇[tdmethylsilanol (TMS-OIi)]、雙(三甲氧基甲石夕基)己炫 [bis(trimethoxysilyl)hexane]、雙(三甲氧基甲石夕基)辛烷 [bis(trimethoxysilyl)octane]、雙(三甲矽基甲基)二甲氧基矽烷 1338923 99年10月5日修正替換頁 95135968 (無劃線)、 [bis(trimethylsilylmethyl)dim拉hoxysilane]、雙三曱氧基曱矽基乙燒 [bistrimethoxysilylethane]、環己基曱基二曱氧基石夕烧 [cyclohexylmethyldimethoxysilane]、環己基三曱氧基矽烷 [cydohexyltrimethoxysilane]、二環戊基二曱氧基矽烷 [dicyclopentyldimethoxysilane]、二異丁基二甲氧基矽烧 [diisobutyldimethoxysilane]、二異丙基二甲氧基石夕娱ι [diisopropyldimethoxysilane]、二曱基二甲氧基石夕烧 [dimethyldimethoxysilane]、六癸基三曱氧基石夕炫 [hexadecyltrimethoxysilane]、辛基二曱基甲氧基石夕烧 φ [octyldimethylmethoxysilane]、三甲氧基矽烷[trimethoxysilane]、三 曱基甲氧基石夕烧[trimethylmethoxysilane]、三(二曱基石夕氧基)乙氧基 石夕烧[tris(dimethylsiloxy)ethoxysilane]或任何其組合。 22.如申請專利範圍第20項之介電膜的處理方法,其中該處 理化合物包含烷基矽氧烷,烷基石夕氧烧包含: (3-縮水甘油趟基丙基)五曱基二石夕氧炫 [(3-glyddoxypropyl)pentamethyldisiloxane]、1,1,1,3,3,5,5-七曱基三 石夕氧烧[l,l,l,3,3,5,5-heptamethyltrisiloxane]、l,l,l,5,5,5-AT;^S^ 氧烧[1,1,1,5,5,5-1^&1116卿11;1^1〇乂汪1^]、1,1,3,3,5,5,7,7-八曱基四石夕 ® 氧烧[l,l,3,3,5,5,7,7-octamethyltetrasiloxane]、l,l,3,3,5,5-Af*S . 石夕氧烧[1,1,3,3,5,5-1概&11^1;11>/11;1制1(^11^]、1,1,3,3-四環戊基二氣二 石夕氧烧[1,1,3,3461;咖)^1(^111^1(1丨(:111〇1:〇(1別(^1^]、1,1,3,3-四乙氧基 _1,3-二曱基二石夕氧烧[1,1,3,3七^哪出(^-1,3-(1丨11^11>4(1以1(^]16]、 1,1,3,3-四異丙基-l,3-二氯二矽氧烷 [l,l,3,3-tetraisopropyl-l,3-dichlorodisiloxane]、1,1,3,3-四異丙基二石夕 氧烧[l,l,3,3-tetraisopropyldisiloxane]、1,1,3,3-四甲基-1,3-二乙氧基 一石夕氧烧[1,1,3,3七如11^1;11}/1-1,3-(^1;11〇乂>/(^11〇\&此]、1,1,3,3-四曱 基一石夕氧烧[1,1,3,3七1似11^11丫1(^1(^116]、1,3-雙(2-胺基乙胺基曱 基)四甲基二矽氧烷 J 4] 1338923 __ 99年10月5曰修正替換頁 95135968 (無劃線) [1,3-bis(2-aminoethylaminomethyl)tetramethyldisiloxane]、1,3-雙(3_ 丙胺基)四甲基二矽氧烷 [l,3-bis(3-aminopropyl)tetramethyldisiloxane]、1,3-雙(氯曱 基)-1,1,3,3-四(三甲基矽氧基)二矽氧烷 [1,3-bis(chloromethyl)-1,1,3,3-tetrakis(trimethylsiloxy)disil〇xane] ' 1,3-雙(氣丙基)四曱基二矽氧院 - [1,3-bis(chloropropyl)tetramethyldisiloxane]、1,3-雙(縮水甘油鱗基兩 基)四曱基二矽氧烷 [l,3-bis(glycidoxypropyl)tetramethyldisiloxane]、1,3-雙(經丁基)四甲 鲁 基二石夕氧炫1[1,3_1^(115^〇父3^11171批1;瓜11161;1134(^11〇父3116]、1,3-雙(經 丙基)四曱基二矽氧烧 [l,3-bis(hydroxypropyl)tetramethyldisiloxane]、1,3-雙(三曱基石夕氧 基)-1,3-二曱基二矽氧烷 [1,3-bis(trimethylsiloxy)-1,3-dimethyldisiloxane]、1,3-二丙稀基四(三 曱基矽氧基)二矽氧烷 [l,3-diallyltetrakis(trimethylsiloxy)disiloxane]、1,3-二丙稀基四曱基 二石夕氧烧[l,3-diallyltetramethyldisiloxane]、1,3-二氣四曱基二石夕氧 烧[l,3-dichlorotetramethyldisiloxane]、1,3-二乙基四曱基二石夕氧烧 [l,3-diethyltetramethyldisiloxane]、1,3-二乙炔基四曱基二石夕氧炫_ _ [l,3-diethynyltetramethyldisiloxane]、1,3-曱基四曱氧基二石夕氧院 [l,3-methyltetramethoxydisiloxane]、1,3-二辛基四曱基二石夕氧烧 [l,3-dioctyltetramethyldisiloxane]、1,3-二乙稀基-1,3-二曱基-l,3-二 . 氯二石夕氧烧[l,3-divinyl-1,3-dimethyl-1,3-dichlorodisiloxane]、1,3-二 乙稀基四乙氧基二石夕氧烧[1,3-diviyltetraethoxydisiloxane]、1,3-二乙 稀基四甲基二石夕氧烧[l,3-divinyltetramethyldisiloxane]、1,5-二氯六 曱基三石夕氧烧[1,5-出(^1〇1<〇116\&11161;11}^1^1〇紐116]、1,5-二乙稀基六 甲基三石夕氧烧[1,5-<^丨11>4]^似11161;1^11;1^1〇\&116]、1,7-二氣八曱基四 石夕氧燒[l,7-dichlorooctamethyltetrasiloxane]、1-丙烯基-1,1,3,3-四甲 基二石夕氧院[l-allyl-l,l,3,3-tetramethyldisiloxane]、2-[曱氧基(聚乙 42 1338923 99年10月5曰修正替換頁 95135968 (無劃線) 烯氧基)丙基]七曱基三矽氧烷 [2-[1!^1;11〇\7(^)〇13^1:11>^116〇乂>^1'〇口}4]1^卩1311161;11)41:也11〇\&116]、3,5-雙 (氣曱基)八曱基四矽氧烷 [3,5-bis(chloromethyl)octamethyltetrasiloxane]、3-[經基(聚乙稀氧基) 丙基]七曱基三矽氧烷
[3-[hydroxy(p〇lyethyleneoxy)propyl]hetamethykrisiloxane]、3-胺丙 基五甲基二石夕氧烧[3-aminopropylpentamethyldisiloxane]、3-氣甲基 七曱基三石夕氧娱^-chloromethylheptamethyltrisiloxane]、]-辛基七甲 基三石夕氧烧[3-octylheptamethyltrisiloxane]、雙(3-氣異丁基)四曱基 二石夕氧燒[bis(3-chloroisobutyl)tetramethyldisiloxane]、雙(氯曱基)四 曱基二石夕氧烧[bis(chloromethyl)tetramethyldisiloxane]、雙(氰丙基) 四甲基二石夕氧烧[bis(cyanopropyl)tetramethyldisiloxane]、雙(十三氟 -1,1,2,2-四羥辛基)四曱基二矽氧烷 [bis(tridecafluoro-1,1,2,2-tetrahydrooctyl)tetramethyldisiloxane]、雙 (三氟丙基)四曱基二矽氧烷 [bis(trifluoropropyl)tetramethyldisiloxane]、雙[(雙環庚稀基)乙基]四 曱基二石夕氧烧[bis[(biscycloheptenyl)ethyl]tetramethyldisiloxane]、雙 -2-[3,4-(環氧基環己基)乙基]四曱基二矽氡烷 [bis-2-[3,4-(epoxycyclohexyl)ethyl]tetramethyldisiloxane]、氣曱基五 曱基二石夕氧炫[chloromethylpentamethyldisiloxane]、十曱基環五石夕 氧烧[<1(^&11^1;11>’1〇>^1〇卩61:^5丨1〇乂&116|、十甲基四石夕氧烧 [decamethyltetrasiloxane]、二乙烯基四(三曱基石夕氧基)二石夕氧烧 [divinyltetrakis(trimethylsiloxy)disiloxane]、十二曱基環六石夕氧烧 [dodecamethylcyclohexasiloxane]、十二曱基七石夕氧烧 [dodecamethylpentasiloxane]、六乙基二石夕氧院 [hexaethyldisiloxane]、六曱基二矽氧烧[hexamethyldisiloxane]、六 乙稀基二石夕氧烧[hexavinyldisiloxane]、八甲基三石夕氧烧 [octamethyltrisiloxane]、五甲基二矽氧烷[pentamethyldisiloxane]、 十四甲基六石夕氧炫[tetradecamethylhexasiloxane]或其任何組合。 43 1338923 99年i〇月5日修正替換頁 95135968 (無劃線)、、 23·如申請專利範圍第20項之介電膜的處理方法,其中該處 理化合物包含芳基矽烷,芳基矽烷包含: /、 笨曱基三乙氧基石夕烧[benzyltriethoxysilane]、二-(對甲苯基)二 甲氧基石夕烧[di-(p-tolyl)dimethoxysilane]、二笨基二乙氧基石夕烧 [diphenyldiethoxysilane]、二苯基二經基石夕烧 [diphenyldihydroxysilane]、二苯基二曱氧基石夕烧 [diphenyldimethoxysilane]、二笨基曱基乙氧基矽烷 [diphenylmethylethoxysilane]、對-雙(三甲氧基甲矽基甲基)苯 [p-bis(trimethoxysilylmethyl)benzene]、苯基二曱基乙氧基矽烷 [phenyldimethylethoxysilane]、第三丁基二苯基甲氧基矽烷 [t-butyldiphenylmethoxysilane]、三苯基乙氧基石夕烧 [triphenyldethoxysilane]、三苯基矽醇[triphenylsilanol]、乙烯基二笨 基乙氧基矽烷[vinyldiphenylethoxysilane]、二苯曱氧基二乙醯氧基 矽烧[dibenzyloxydiacetoxysilane]、苯基乙醯氧基三曱矽烧 [phenylacetoxytrimethylsilane]、苯基二曱基乙醯氧基矽烷 [phenyldimethylacetoxysilane]、苯基三乙醯氧基矽烷 [phenyltriacetoxy silane]或其任何組合。 24.如申請專利範圍第20項之介電膜的處理方法,其中該處 理化合物包含芳基石夕烧,芳基石夕烧包含: 雙三曱石夕基尿素[bistrimethylsilyl urea (BTSU)]、雙(三曱石夕基) 乙醯胺[bis(trimethylsilyl)acetamide (BSA)]、雙(三曱石夕基)三氟曱基 乙醯胺[此(记11^11>^办1)1;1相11〇1*〇11^11>^〇6131111(16(3811^)]、三乙 酿乙稀基石夕烧[triacetylvinylsilane (TAVS)]、N-曱基-N-三甲石夕基-三 氟乙驢胺[N-methyl-N-trimethylsilyl-trifluoroacetamide (MSTFA)]、 N-甲基-N-第三丁基二甲矽基-三氟乙醯胺 [N-methyl-N-tert-butyldimethylsilyl-trifluoroacetamide (MBDSTFA)]、N-甲基-N-三甲矽基-七氟異丁酰胺 44 1338923 99年10月5日修正替換頁 95135968 (無劃線)
[N-methyl-N-trimethylsilyl-heptafluorobutyramide (MSHFBA)]、乙酿 氧基三曱石夕烧[acetoxytrimethylsilane (TMAS)]、3-三氟乙酿氧基丙 基三甲氧基石夕炫[3-trifluoroacetoxypropyltrimethoxysilane]、乙醒氧 基乙基二曱基氯石夕烧[acetoxyethyldimethylchlorosilane]、乙酿氧基 乙基曱基二氣石夕烧[acetoxyethylmethyldichlorosilane]、乙臨氧基乙 基三氣石夕烧[acetoxyethyltrichlorosilane]、乙酿氧基乙基三乙氧基石夕 烧[acetoxyethyltriethoxysilane]、乙酿氧基乙基三曱氧塞石夕烧 [acetoxyethyltrimethoxysilane]、乙酿氧基甲基二曱基乙酿氧基石夕烧 [acetoxymethyldimethylacetoxysilane]、乙醯氧基甲基三乙氧基石夕烧 [acetoxymethyltriethoxysilane]、乙酿氧基甲基三曱氧基石夕烧 [acetoxymethyltrimethoxysilane]、乙醯氧基甲基三甲石夕烧 [acetoxymethyltrimethylsilane]、乙醯氧基丙基曱基二氣矽烧 [acetoxypropylmethyldichlorosilane]、二曱基二乙醯氧基石夕烧 [dimethyldiacetoxysilane]、二第三丁基二乙醯氧基矽烷 [di-t-bi丨tyldiacetoxysilane]、乙基三乙醯氧基石夕炫 [ethyltriacetoxysilane]、曱基三乙酸氧基石夕烧 [methyltriacetoxysilane]、四乙醯氡基矽烷[tetraacetoxysilane]、四(三 氟乙臨氧基)石夕烧[tetrakis(trifluoroacetoxy)silane]、三乙基乙醯氧基 矽烷[triethylacetoxysilane]、乙烯基曱基二乙醯氧基矽烷 [vinylmethyldiacetoxysilane]、乙烯基三乙醯氧基矽烷 [vinyltriacetoxysilane]、二苯甲氧基二乙醯氧基矽烷 [dibenzyloxydiacetoxysilane]、苯基乙醯氧基三曱基矽烷 [phenylacetoxytrimethylsilane]、苯基二甲基乙醯氧基矽烷 [phenyldimethylacetoxysilane]、苯基三乙醯氧基矽烷 [pheny ltriacetoxysilane]或其任何組合。 25.如申請專利範圍第20項之介電膜的處理方法,其中該處 理化合物包含環矽氧烷,環矽氧烷包含: 1,3,5,7-四甲基環四石夕氧烧 45 1338923 *-----— . 99年丨〇月5日修正替換頁 95135968(無劃線) [l,3,5,7-tetramethylcyclotetrasiloxane]、七甲基環四石夕氧烷 [heptamethylcyclotetrasiloxane]、六乙基環三石夕氧烧 [hexaethylcyclotrisiloxane]、六曱基環三石夕氧烧 [hexamethylcyclotrisiloxane]、八曱基環四石夕氧烧 [octamethylcyclotetrasiloxane]、五曱基環五石夕氧烧 [pentamethy丨cyclopentasiloxane]、五乙烯基五曱基環五石夕氧烧 • [pentavinylpentamethylcyclopentasiloxane]、四乙基環四石夕氧院 [tetraethylcyclotetrasiloxane]、六苯基環三石夕氧烧 [hexaphenylcyclotrisiloxane]、八苯基環石夕氧燒
[octaphenylcydotetrasiloxane]、(乙酿氧基乙基)七曱基環四石夕氧烧 [(acetoxyethyl)heptamethylcyclotetrasiloxane]、四(二苯基鱗乙基)四 曱基環四矽氧烷 [tetraskis(diphenylphosphinoethyl)tetramethylcyclotetrasiloxane]或任 何其他組合。 26.如申請專利範圍第20項之介電膜的處理方法,其中該處 理化合物包含芳基矽氧烷,芳基矽氧烷包含: 1,1,3,3-四苯基二甲基二矽氧烧 [1,1,3,3七的卩1^1^1(^11^1:1^1(^1€^收]、1,1,3,5,5-五笨基-1,3,5-三曱 肇基三石夕氧院[1,1,3,5,5-pentapheny 1-1,3,5-trimethyltrisiloxane]、 1,1,5,5-四苯基-1,3,3,5-四甲基三石夕氧烧 [1,1,5,5-tetraphenyl-l,3,3,5-tetramethyltrisiloxane]、1,3-二氣-1,3_二 , 笨基-1,3-二曱基二矽氧烷 [l,3-dichloro-l,3-diphenyl-l,3-dimethyldisiloxane]、1,3-二氣四笨基 二石夕氧烧[1,3-(^〇111〇1:(^加卩1^]1>4(1丨3丨1〇\3116]、1,3-二苯基-1,1,3,3-四 (二曱基矽氧基)二矽氧烷 [1,3-diphenyl-1,1,3,3-tetrakis(dimethylsiloxy)disiloxane]、1,3-二苯基 -1,1,3,3-四曱基二矽氧烷 [l,3-diphenyl-l,l,3,3-tetramethyldisiloxane]、1,3-二乙烯基-1,3-二笨 46 1338923 99年10月5日修正替換頁 95135968(無劃線)' 基-1,3-二甲基二矽氧烷 [l,3-divinyl-l,3-diphenyl-l,3-dimethyldisiloxane]、1,4-雙(三曱氧基 曱石夕基乙基)苯[1,4七15〇:1*丨11161;110\}^1>^1;11}4)5611261^]、1,5-雙(縮水甘 油醚基丙基)-3-苯基-1,1,3,5,5-七甲基三矽氧烷 [1,5-bis(glycidoxypropyl)-3-phenyl-1,1,3,5,5-heptamethyltrisiloxane] 、1,5-二乙烯基-3,3-二苯基-1,1,5,5-四曱基三矽氡烷 [l,5-divinyl-3,3-diphenyl-l,l,5,5-tetramethyltrisiloxane]、1,5-二乙稀 基-3-笨基七曱基三矽氧烷 [l,5-divinyl-3-phenylpentamethyltrisiloxane]、3,5-二苯基八曱基四石夕 • 氧烧[3,5-(^11611丫1〇(^11^11>^611&511〇乂&116]、3-苯基-1,1,3,5,5-七曱基 三石夕氧烧[3-卩1^11丫1-1,1,3,5,5-]16卩1&11^11}41:1^1〇\3116]、3-苯基七曱基 三石夕氧炫[3-phenylheptamethyltrisiloxane]、雙(間丙稀基苯基二曱石夕 基辛基)-四甲基二矽氧烷 [bis(m-allylphenyldimethylsilyloctyl)-tetramethyldisiloxane]、雙(七亂 苯基二甲氧基石夕烧[bis(pentafluorophenyldimethoxysUane)]、二乙稀 基四苯基二石夕氧烧[divinyltetraphenyldisiloxane]、六苯基二石夕氧烧 [hexaphenyldisiloxane]、六苯基環三石夕氧烧 [hexaphenylcyclotrisiloxane]、1,3-雙[(丙烯醯曱基)苯乙基]四甲基二 石夕氧烷[1,3七丨3办〇171〇11^1^1知1^116&71批加〇^1^1(^丨1〇\&狀]、八苯 Φ 基環四石夕氧烧[〇伽口1^1^吻(;1(^加3丨1〇乂31^]、(乙醯氧基乙基)七曱 基環四石夕氧烧[(3(^0乂}^11)4)11^1^11^11}^}^1(^此311〇乂&116]、四(二 苯基膦乙基)四甲基環四矽氧烷 , [tetrakis(diphenylphosophinoethyl)tetmmethylcyclotetrasiloxane]或其 任何組合。 27.如申請專利範圍第20項之介電膜的處理方法,其中該處 理化合物包含醯基矽氧烷,醯基矽氧烷包含: 1,1,1,3,3-五甲基-3-乙醯氧基二矽氧烷 [l,l,l,3,3-pentamethyl-3-acetoxydisUoxane]、1,3-雙(3_缓丙基)四曱 47 1338923 99年10月5曰修正替換頁 95135968 (無劃線) 基二矽氧烧[1,3-恤(3-。&出〇\>^〇卩>/1批加11^}^1此丨1〇\3116]、1,3-雙 (3-甲基丙烯醯氧基)四(三曱基矽氧基)二矽氧烷 [l,3-bis(3-methylacryloxypropyl)tetrakis(trimethylsiloxy)disiloxane] 、:1,3-雙(3-甲基丙烯醯氧基)四甲基二矽氧烷 [l,3-bis(3-methacryloxypropyl)tetramethyldisiloxane]、11-乙醯氧基 Ί 烧基三氣石夕烧[11-acetoxyundecyltrichlorosi丨ane]、2-[乙酿氧基 (聚乙烯氡基)丙基]七曱基三矽氧烷 [2-[acetoxy(p〇lyethyleneoxy)propyl]heptamethyltrisiloxane]、曱基丙 烯醯氧基五甲基二矽氧烷 [methacryloxypropylpentamethyldisiloxane]、1,3-雙[(丙烯醯甲基)苯 乙基]四甲基二矽氧烷 [l,3-bis[(acryl〇methyl)phenethyl]tetramethyidisiloxane]或其任何組 合。 28. 如申請專利範圍第20項之介電膜的處理方法,其中該處 理化合物包含鹵素矽氧烷,齒素矽氧烷包含: 六氣二石夕氧烧[hexachlorodisiloxane]、八氯三石夕氧烧 [octachlorotrisiloxane]或其任何組合。 29. 如申請專利範圍第20項之介電膜的處理方法,其中該處 理化合物包含聚倍半矽氧烷(PSS),聚倍半矽氧烷(pss)包含: 八曱基聚倍半石夕氧对⑽抓础…心叫也膽小十甲基聚倍 半石夕氧烧[<^311161;11}^5出63411丨0乂3收]、八乙烯基聚倍半石夕氧烧 [octavinylsilsesquioxane]、十乙烯基聚倍半矽氧烷[如⑽㈣广 silsesquioxane]、八 f 氧基聚倍半矽氧烧[〇ctameth〇xy silsesquioxane]、十甲氧基聚倍半矽氧^decameth〇xy silsesquioxane]、氣丙基異丁基_pSS_〇r〇pr〇pyiis〇but^pss]或其 任何組合。 ^ 48 1338923 99年10月5 a修正替換頁 95135968 (無劃線) ^ yjijjyOO 該介電膜包電膜的處理方法’其中暴露 3恭路;1包⑦數靶圍自1.6至2.7之介電膜。 該介項之介f麟處理方法,其中暴露 δ暴路夕孔;丨电膜及非多孔介電膜之至少一者。 該多梅露 該介露 八14:二㈣腦可讀聽,包含縣板處_統帽行之程奸 i驟 腦系統執行該些指令時,使該基板處理系統施行下列9 ff放置步驟’將該複數片基板放制批次處理系统中. -或ίϊΐΐί驟’加熱該複數片基板,同時將該複數片基板之 二帝=於邊批次處理系統中的惰性氣體環境中; /“ηΐ成步驟’ 減纽系統的驗電聚生成 If xHy<化3物,其中χ及y代表大於或等於1之整數; ^里^物通人步驟’將該處理化合物通人該批次處理 土板暴路步驟,將該複數#基板上之該介電 ’ 暴露至該電漿,其中 少表面 ^介電臈具有的介電常數係低於&〇2之介電常數; 驟,密封或部分密封該介電膜的裸露表面;及 來埴復ί驟,藉由利用該處理化合物中的含碳材料 木真滿厌二乏位置,恢復或部分恢復該介電膜的介電常數值。 49 1338923 Η 、圖式: 99年10月5日修正替換頁 95135968(無劃線)
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WO2007040856A2 (en) | 2007-04-12 |
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