TWI338721B - A sputtering apparatus with a side target and a method for sputtering a workpiece having non-planer surfaces - Google Patents

A sputtering apparatus with a side target and a method for sputtering a workpiece having non-planer surfaces Download PDF

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Publication number
TWI338721B
TWI338721B TW098135072A TW98135072A TWI338721B TW I338721 B TWI338721 B TW I338721B TW 098135072 A TW098135072 A TW 098135072A TW 98135072 A TW98135072 A TW 98135072A TW I338721 B TWI338721 B TW I338721B
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TW
Taiwan
Prior art keywords
sputtering
source
workpiece
carrier
power
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Application number
TW098135072A
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English (en)
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TW201114929A (en
Inventor
Wei Yen Fu
Chao Hsi Cheng
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Suntek Prec Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Suntek Prec Corp filed Critical Suntek Prec Corp
Priority to TW098135072A priority Critical patent/TWI338721B/zh
Priority to DE102010048270A priority patent/DE102010048270A1/de
Priority to US12/903,383 priority patent/US20110089031A1/en
Priority to JP2010232535A priority patent/JP2011089202A/ja
Priority to KR1020100100837A priority patent/KR20110042017A/ko
Application granted granted Critical
Publication of TWI338721B publication Critical patent/TWI338721B/zh
Publication of TW201114929A publication Critical patent/TW201114929A/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Description

、發明說明： 、
【發明所屬之技術領域J 本發明係關於-種含有側乾之濺 用以對具有非平面表面的工件進行_=及= 【先前技術】 市面上的電子產品，比如：手機 筆記型電腦、隨身聽 等，五花八門。消費者在選擇是否蹲買時，二㈣、 外，電子產品⑽型及賊也財很大的考量因素，:之 庄重外型設計是否新穎、美觀，是否重量輕方 注重手持時觸感是否良好等等。 戍者 由於工程㈣可崎出成_方式製備成各獅狀 此，電子產品的外殼通常使用鋪外殼。然而， 成的外殼，於視覺_碰時質紐差，同時也Μ防止^ 干擾。，必須對電子系統的塑膠外殼鍍上驾層^了 使電子產品之外殼具有良好的視覺域與f感之外，也 止電磁波任意穿透娜外殼，影響電子產品的使用。 近年來’真空賤鑛製程已逐漸取代噴導電漆、電解電鐵， 而被大量應用於各類產品上。其原理是將氣體游離成電聚又， 電漿中的氣體離子縣蝴·，树巾的原子被轉出來後沉 積於基板，職賴。真空缝技射續_齡統，按 被舰基材祕置方式’可將麟系統分為水平式賤锻系 統、以及直立式激鑛系統。然而，不管是水平式或直立式^ ί賤锻系統，由於濺錢源是平行於欲錄工件表面，而設置於其 正對面。因此，若工件表面具有多處凹陷部、柱狀結構、階

Claims (1)

  1. -LJJO/ZI -LJJO/ZI 七、申請專利範圍 1、一種濺鑛系統， 濺鍍系統包括： : #\0、· ·: i . - 一，. 一· 用以對具有特面表件進行濺鍵，該 一濺鍍腔體 該濺鍍腔體内至少包含： -載具或輸送機構，収承载該工件； 一第一濺鍍源， 大約與該載具平行， 源； 以—第一預定距離與該載具相對設置，並 以提供該卫件表面的轉Φ之主要減鐘 m 源該第一幾鑛源之外型成一環型結構，將該 源包圍於其内，並且該第二雜源、由複數個第二賴 I且成’該m飾所在平面位置的法線方向與水平方向 :成：夾角’傾斜配設於該第一濺鍍源的側邊，該第二濺鍍源 大致壤繞於娜-崎源，並且至少部份魏社件表面之垂 直面結構正鑛來進行雜，所述垂直面結構是指和該水平面 垂直的表面；及 一第二磁鐵，緊臨並環繞該第二濺鍍源的該環型結構之上 下側壁設置，以形成單一封閉的環型迴路磁場，提升該第二濺 鍵源被濺擊的機率。 ' 2_如申請專利細第彳項所述之雜纽，財該f 與該第二濺鍍源係分別連接一第一電源供應器及一第二電源 供應器，分別控制該第一減鍵源及該第二賤錢源、之功率。 3.如申請專利範圍第1項所述之藏鍵系統，其中，該第—滅於 源包括複數個成矩形中空結構之第一濺鍍靶，該些第一錢鍵乾 相互並排’並且’該錢魏腔體内更包括複數對第一磁鐵，分別 13 2 h結構ϋ練中 以提 二冓第的内側壁及外侧壁皆環設該第一磁鐵， 升該第一濺鍍源被濺擊的機率。 = 圍第3項所述之減鑛系統’其中該些第-濺鑛 =及弟二賤鍍键接複數個電源供應器，时職制該些賴 輕之功率。 一 5_如申％專利範圍第3項所述之賴系統，其中該些第二賤鐵 粗連接同樣-第二電源供應器，以同時控制該些賤鍍把之功 率 該些第一漱锻乾之間有大約〇.1〜15 mm之間距。 6. 如申π專利範[g第3項所述之^^彳、統，其巾該濺鍍腔體更 包括一旋轉裝置，使該載具旋轉，以提供當對該工件進行混合 材料的賤難糾，能使材料充分混合後碱複合材質薄膜。 7. 如申請專利範圍第彳項所述之濺鍍系統，其中該第一濺鍍源 及該第二濺鍍源的材料選自銅、鋁鎂合金、不鏽鋼、矽其中之 一種。 8. 如申請專利範圍第彳項所述之濺鍍系統’其中該夾角大約介 於15〜55度之間。 9.如申請專利範圍第1項所述之濺鍍系統，其中該工件之表 面包括許多凹陷部、溝槽、斜面、階梯或柱狀結構等等。 14 10·如申請專利範圍第1項所述之濺鍍系統，其中該濺鍍腔體 中更已括複數個工件，放置於該載具上，該些工件並依照該些 件尺寸及該載具大小，相互之間相距一第三預定距離，以防 止該些工件之間相互遮蔽。 11·如申請專利範圍第1項所述之濺鍍系統，其中，該濺鍍腔 體更包括一遮罩’設置於該工件上方’以對該工件做區域選擇 性濺鍍。 12·如申請專利範圍第1項所述之藏鍵系統，其中，該濺鍍腔 體"又置多個雜室’以進行多的堆疊製程。 13.38721 八、圖式： 105
    A
    1
    1
    圖 1 B 1338.721 ^\&月(3>3.二正替.Μ
    2 1338721
    13 圖 3 B I33&721
TW098135072A 2009-10-16 2009-10-16 A sputtering apparatus with a side target and a method for sputtering a workpiece having non-planer surfaces TWI338721B (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
TW098135072A TWI338721B (en) 2009-10-16 2009-10-16 A sputtering apparatus with a side target and a method for sputtering a workpiece having non-planer surfaces
DE102010048270A DE102010048270A1 (de) 2009-10-16 2010-10-12 Sputtersystem mit normalen Target und seitlichen schrägen Targets
US12/903,383 US20110089031A1 (en) 2009-10-16 2010-10-13 Sputtering System with Normal Target and Slant Targets on the Side
JP2010232535A JP2011089202A (ja) 2009-10-16 2010-10-15 通常のターゲットおよび側方の傾斜ターゲットを有するスパッタリングシステム
KR1020100100837A KR20110042017A (ko) 2009-10-16 2010-10-15 측면에 수직형 타켓 및 경사형 타켓을 구비한 스퍼터링 시스템

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Application Number Priority Date Filing Date Title
TW098135072A TWI338721B (en) 2009-10-16 2009-10-16 A sputtering apparatus with a side target and a method for sputtering a workpiece having non-planer surfaces

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TWI338721B true TWI338721B (en) 2011-03-11
TW201114929A TW201114929A (en) 2011-05-01

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US (1) US20110089031A1 (zh)
JP (1) JP2011089202A (zh)
KR (1) KR20110042017A (zh)
DE (1) DE102010048270A1 (zh)
TW (1) TWI338721B (zh)

Cited By (1)

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Publication number Priority date Publication date Assignee Title
CN110007539A (zh) * 2019-05-22 2019-07-12 江苏铁锚玻璃股份有限公司 高效均匀变色的曲面电致变色透明器件及其制备方法

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KR20140126517A (ko) * 2013-04-23 2014-10-31 주식회사 아바코 마그넷 유닛 및 이를 구비하는 스퍼터링 장치
WO2015082547A1 (en) * 2013-12-04 2015-06-11 Oerlikon Advanced Technologies Ag Sputtering source arrangement, sputtering system and method of manufacturing metal-coated plate-shaped substrates
KR101888173B1 (ko) 2016-11-09 2018-08-13 한국알박(주) 자석 구조체 및 이를 구비하는 스퍼터링 장치
JP7132060B2 (ja) * 2018-09-27 2022-09-06 芝浦メカトロニクス株式会社 成膜装置
CN112522671B (zh) * 2019-09-19 2023-05-02 中国科学院长春光学精密机械与物理研究所 磁控溅射方法、装置、设备及可读存储介质
US11626272B2 (en) * 2020-08-14 2023-04-11 Au Optronics Corporation Sputtering equipment and operation method thereof
US20240170269A1 (en) * 2022-11-18 2024-05-23 Applied Materials, Inc. System and methods for depositing material on a substrate
CN117248187B (zh) * 2023-10-24 2024-06-04 无锡尚积半导体科技有限公司 一种异型靶材及磁控溅射工艺

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US4606806A (en) * 1984-05-17 1986-08-19 Varian Associates, Inc. Magnetron sputter device having planar and curved targets
JPH0672299B2 (ja) * 1985-01-31 1994-09-14 株式会社日立製作所 スパツタリング装置及びスパツタリング方法
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Publication number Priority date Publication date Assignee Title
CN110007539A (zh) * 2019-05-22 2019-07-12 江苏铁锚玻璃股份有限公司 高效均匀变色的曲面电致变色透明器件及其制备方法

Also Published As

Publication number Publication date
KR20110042017A (ko) 2011-04-22
JP2011089202A (ja) 2011-05-06
US20110089031A1 (en) 2011-04-21
TW201114929A (en) 2011-05-01
DE102010048270A1 (de) 2011-04-28

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