TWI337510B - Laser induced thermal imaging apparatus with contact frame - Google Patents

Laser induced thermal imaging apparatus with contact frame Download PDF

Info

Publication number
TWI337510B
TWI337510B TW95139700A TW95139700A TWI337510B TW I337510 B TWI337510 B TW I337510B TW 95139700 A TW95139700 A TW 95139700A TW 95139700 A TW95139700 A TW 95139700A TW I337510 B TWI337510 B TW I337510B
Authority
TW
Taiwan
Prior art keywords
film supply
layer
magnetic
supply device
contact frame
Prior art date
Application number
TW95139700A
Other languages
Chinese (zh)
Other versions
TW200733801A (en
Inventor
Sok Won Noh
Mu Hyun Kim
Jin Wook Seong
Sang Bong Lee
Sun Hoe Kim
Original Assignee
Samsung Mobile Display Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020050109815A external-priority patent/KR100700837B1/en
Priority claimed from KR1020050109814A external-priority patent/KR100745336B1/en
Priority claimed from KR1020050109816A external-priority patent/KR100745337B1/en
Application filed by Samsung Mobile Display Co Ltd filed Critical Samsung Mobile Display Co Ltd
Publication of TW200733801A publication Critical patent/TW200733801A/en
Application granted granted Critical
Publication of TWI337510B publication Critical patent/TWI337510B/en

Links

Landscapes

  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)

Description

P37510 九、發明說明: . 【發明所屬之技術領域】 本發明係關於電子裝置的生產,更明確地說,係關於 利用雷射引發的熱成像(LITI)技術來形成電子裝置中的有 機材料層。 【先前技術】 特定的電子裝置包含有機層。舉例來說,一有機發光 裝置(OLED)便包含各種有機層。已經有各種方法可用以形 # 成此等有機層。舉例來說,此等方法包含沉積法、喷墨法、 以及雷射引發的熱成像(LITI)法。 於UTI法争,會利用一供骐裝置來提供一可轉印層。 • 該供膜裝置係被放置在一已部份製造完成的電子裝置(中間 裝置)之上,俾使該可轉印層會接觸該中間裝置上要轉印該 可轉印層的表面(接收表面p接著,便會將一雷射束照射 在鑪供膜裝置的選定區域上,其會於供膜裝置的選定區域 中產生熱。該熱會使得該可轉印層中所希的部份剝離。當 籲移除4供膜裝置之後,該可轉印層的該等經剝離部份仍會 殘留在該中間裝置的表面上。 典型的LITI設備會使用吸力讓該可轉印層於此處理 肩間保持接觸該中間裝置的表面。圖i所示的便係一 -設備100的剖面圖。該LITI設備1〇〇包含:一反應室11〇、 —基板支撐座120、以及一雷射源或振盪器13〇。該基板 支撐座120包含:一中間裝置接收溝槽ΐ2ι,用以於其中 接收一中間1子裝f 140 ;以及一供膜裝置接收溝槽123, 6 1337510 用以於其中接收一供膜裝置150。 為以非常精確且較少缺陷的方式將有機材料部份轉印 至該中間裝置上,該可轉印層與該接收表面之間必須緊密 地接觸。UTI設備100包含一抽吸機制,用以達成此緊密 接觸的目的》該抽吸機制包含複數根導管丨61與丨63以及 一真空唧筒p。經由導管丨61所產生的吸力會將放置在溝 槽121中的中間裝置14〇往下吸引且保持往下吸引。經由 導管163所產生的吸力會將放置在溝槽123中的供膜裝置 150往下吸引且保持往下吸引並且接觸該中間裝置。為產 生前述的吸力,該反應室内必須要有空氣或是其它氣態媒 介。 ' 不過,因為LITI製程前後所實施的製程通常係在真空 環境令施行,利用上述吸力的LITI製程卻必須破壞前面製 程與後面製程之間的真空。 本節的討論係為本發明提供相關技術的背景資訊,而 並非採用先前技術。P37510 IX. Description of the invention: 1. Field of the Invention The present invention relates to the production of electronic devices, and more particularly to the use of laser induced thermal imaging (LITI) techniques to form organic material layers in electronic devices. . [Prior Art] A specific electronic device includes an organic layer. For example, an organic light emitting device (OLED) contains various organic layers. Various methods have been used to form these organic layers. For example, such methods include deposition methods, ink jet methods, and laser induced thermal imaging (LITI) methods. In the UTI law, a supply device is used to provide a transfer layer. • the film supply device is placed on a partially fabricated electronic device (intermediate device) such that the transferable layer contacts the surface of the intermediate device on which the transferable layer is to be transferred (receiving The surface p then illuminates a laser beam onto a selected area of the furnace film supply device which generates heat in selected areas of the film supply unit. This heat causes the desired portion of the transfer layer to Peeling. After the removal of the 4 film supply device, the peeled portions of the transferable layer will remain on the surface of the intermediate device. Typical LITI devices use suction to allow the transfer layer to be The treatment shoulder is kept in contact with the surface of the intermediate device. Figure 1 is a cross-sectional view of the device 100. The LITI device 1 includes: a reaction chamber 11A, a substrate support 120, and a laser a source or an oscillator 13. The substrate support 120 includes: an intermediate device receiving a trench ΐ2ι for receiving an intermediate 1 sub-assembly f 140 therein; and a film supply device receiving the trench 123, 6 1337510 for Wherein a film supply device 150 is received. The portion of the organic material is transferred to the intermediate device in a less defective manner, and the transfer layer must be in intimate contact with the receiving surface. The UTI device 100 includes a suction mechanism for achieving this close contact. The suction mechanism comprises a plurality of conduits 61 and 63 and a vacuum cylinder p. The suction generated by the conduit 61 will attract the intermediate device 14 placed in the groove 121 downward and keep it downward. The suction generated by the conduit 163 will draw the film supply device 150 placed in the groove 123 downward and keep it downwardly attracted and contact the intermediate device. In order to generate the aforementioned suction force, the reaction chamber must have air or Other gaseous media. ' However, because the process performed before and after the LITI process is usually performed in a vacuum environment, the LITI process using the above suction must destroy the vacuum between the previous process and the subsequent process. The discussion in this section is provided for the present invention. Background information on related art, rather than prior art.

【發明内容】 本發明的其中一項觀點係提供一種雷射引發的熱成像 (LITI)設備,㈣備包括:_基板支撐座,其係被配置成 用以支撐一中間電子裝置與一供膜裝置;一雷射源;以及 一被设置在該基板支撐座與該雷射源之間的接觸框架,該 接觸框架可在-第-位置與—第二位置之間相冑於該基板 支撐座來移動’其中1第一位置和該基板支撐座相隔一 第-距離’該第二位置和該基板支撐座相隔一第二距離, 1337510 - 該第二距離大於該第一距離。該接觸框架會被配置成用於 以該第一位置為基準來擠壓該供膜裝置,使其抵頂該中間 裝置。該接觸框架包括選自由下面所組成之群中的至少一 磁性材料:永久磁鐵與電磁鐵。 - 該電磁鐵可被電連接至一外部電源,且可被配置成可 選擇性地受激。該至少一磁性材料可能包括選自由下面所 組成之群中的-或多種形式:平板狀、片狀、晶片狀棒 狀、以及顆粒狀。該接觸框架可包括一磁性部份與一非磁 *性部份,且該磁性部份可包括該至少一磁性材料。該磁性 部份一般可被排列成比該非磁性部份更靠近該基板支撐 j。該基板支撐座可包括選自由下面所組成之群中的至少 -磁性材料:永久磁鐵、電磁鐵、以及可磁性吸引的材料。 . 錢備可進—步包括:-中間電子裝置,其包括一接 收表面且係被放置在該基板支撐座之上;以及一供膜裝 置,其包括一可轉印膜層且係被放置在該中間裝置之上。 _ 4中間裝置與該供膜裝置可被排列成讓該接收表面與該可 轉。p膜層相互接觸。該接收表面與該可轉印膜層之間實質 上可沒有任何氣泡。該供膜裝置可進一步包括 換層。該供膜裝置可不包括一含有一永久磁鐵或一電磁鐵 的磁性層。該中間電子裝置可包括選自由下面所組成之群 中的至少—磁性材料:永久磁鐵 '電磁鐵、以及可磁性吸 本發明的另一 —電子裝置的方法 項觀點係提供一種利用上述設備來製造 。該方法包括:將一中間裝置放置在該 1337510 基板支揮座上,該令間裝置包括—第_表面與一第二表 面,該第一表面面向該接觸框架,該第二表面則會接觸該 土板支撐座,冑-供臈裝置放置在該中間裝置的該第—表 面上,該供膜裝置包括一第三表面與一第四表面,該第三 表面面向該接觸框帛,而該第四表面則自向該基板支撲 座;移動該接觸框架以便接觸該供膜裝置的該第三表面, 俾使該供膜裝置的該第四表面會接觸該中間裝置的該第一 表面,以及擠壓该供膜裝置,使其抵頂該中間裝置。 該接觸框架可包括一開口,而該方法則可進一步包括 經由該接觸框冑的該開口將一雷射束照射在該供膜裝置 。亥方法可在一真空壤境中進行。該接觸框架可包括一 電磁鐵’而引發該磁性作用力則可包括啟動該電磁鐵。擠 壓該供膜裝置可包括讓該接觸框架的重量施加在該供膜裝 置上。擠壓該供膜裝置可進一步包括讓該至少一磁性材料 考位於„亥中間裝置之該第一表面下方的一磁鐵或可磁性吸 引的材料產生磁性相互作用。該中間裳置可包括該磁鐵或 可磁性吸引的材料。該基板支樓座可包括該磁鐵或可磁性 吸引的材料。 【實施方式】 從下面的說明中,配合附圖,便可清楚且更容易明白 本發明的各項觀點與優點。 見在將參考附圖來說明本發明的各項實施例。於該等 圖式中才目同的元件符號表示相同或功能雷同的部件或元 件〇 1337510 直Aii發的熱成像設備 於本發明的實施例中,一 LITI設備會使用一磁性作用 力來讓一供膜裝置與一中間裝置之間產生緊密接觸。和圖 1的LITI設備中的吸力不同的係,磁性作用力於該反應室 内並不需要空氡或流體。於本發明的實施例中,利用該磁 性作用力來接觸該供膜裝置與中間裝置可於真空或非真空 中來實施。 圖2所示的係根據一實施例的一 LITI設備200。圖中SUMMARY OF THE INVENTION One aspect of the present invention provides a laser-induced thermal imaging (LITI) device, (4) comprising: a substrate support configured to support an intermediate electronic device and a supply film a laser source; and a contact frame disposed between the substrate support and the laser source, the contact frame being opposite to the substrate support between the -first position and the second position To move 'the first position of 1 and the substrate support are separated by a first distance'. The second position is separated from the substrate support by a second distance, 1337510 - the second distance is greater than the first distance. The contact frame is configured to squeeze the film supply device against the intermediate device based on the first position. The contact frame includes at least one magnetic material selected from the group consisting of: a permanent magnet and an electromagnet. - The electromagnet can be electrically connected to an external power source and can be configured to be selectively excited. The at least one magnetic material may comprise - or a plurality of forms selected from the group consisting of: a flat plate, a sheet, a wafer-like rod, and a pellet. The contact frame may include a magnetic portion and a non-magnetic portion, and the magnetic portion may include the at least one magnetic material. The magnetic portion can generally be arranged closer to the substrate support j than the non-magnetic portion. The substrate support can include at least - a magnetic material selected from the group consisting of: a permanent magnet, an electromagnet, and a magnetically attractable material. The method includes: - an intermediate electronic device including a receiving surface and placed on the substrate support; and a film supply device including a transferable film layer and being placed Above the intermediate device. The intermediate device and the film supply device may be arranged to allow the receiving surface to be rotatable. The p film layers are in contact with each other. There may be substantially no air bubbles between the receiving surface and the transferable film layer. The film supply device may further include a layer change. The film supply device may not include a magnetic layer containing a permanent magnet or an electromagnet. The intermediate electronic device may include at least one of a magnetic material selected from the group consisting of: a permanent magnet 'electromagnet, and another method of magnetically absorbing the other electronic device of the present invention, providing a method of manufacturing using the above apparatus . The method includes: placing an intermediate device on the 1337510 substrate support, the intervening device including a first surface and a second surface, the first surface facing the contact frame, the second surface contacting the a soil support, the 臈-supply device is disposed on the first surface of the intermediate device, the film supply device includes a third surface and a fourth surface, the third surface facing the contact frame, and the The four surfaces are self-supporting the substrate; the contact frame is moved to contact the third surface of the film supply device such that the fourth surface of the film supply device contacts the first surface of the intermediate device, and The film supply device is squeezed to abut the intermediate device. The contact frame can include an opening, and the method can further include irradiating a laser beam through the opening of the contact frame to the film supply device. The method can be carried out in a vacuum soil. The contact frame can include an electromagnet' and initiating the magnetic force can include activating the electromagnet. Squeezing the film supply device may include applying a weight of the contact frame to the film supply device. Squeezing the film supply device may further comprise magnetically interacting a magnet or a magnetically attractable material of the at least one magnetic material under the first surface of the intermediate device. The intermediate skirt may comprise the magnet or A material that can be magnetically attracted. The substrate support can include the magnet or a magnetically attractable material. [Embodiment] From the following description, the various aspects of the present invention can be clearly and more easily understood. Advantages. Various embodiments of the present invention will be described with reference to the drawings, in which the same reference numerals indicate the same or functionally identical components or components. 1337510 In an embodiment of the invention, a LITI device uses a magnetic force to create a close contact between a film supply device and an intermediate device. Unlike the suction force in the LITI device of Figure 1, the magnetic force acts on the reaction. There is no need for air or fluid in the room. In the embodiment of the invention, the magnetic force is used to contact the film supply device and the intermediate device can be vacuum or non-vacuum. Implemented in Figure 2. Figure 2 shows an LITI device 200 in accordance with an embodiment.

所示的LITI設備包含:一反應室21〇、_基板支撐座26〇、 一接觸框架230、以及一雷射源或振盪器220。反應室210 會提供一空間以用一供膜裝置24 1來處理中間(或是部份製 造完成的)電子裝置250。該基板支撐座260會被配置成用 以支撐該中間裝置250與該供膜裝置241。該接觸框架23〇 會以可移動的方式被連接至該反應室21〇,以便於該供膜 裝置241上提供一向下的重量.於特定的實施例中,該接 觸框架230可被省略。該供膜裝置241包含一可轉印層(圖 中未顯示)。該可轉印層會經由一雷射被轉印至該中間裝置 上。雷射振盪器220係被設置在該接觸框架23〇的上方。 雷射振盪器220會被配置成用以經由該接觸框架將一 雷射照射在該供膜裝置241之上。 於其中一實施例中,LITI設備200的運作方式如下。 首先,該中間裝置250會被引入該反應室21〇之中且被放 置在該基板支撐座260之上。接著,該供臈裝置24丨L被 放置在該中間裝置250之上。該供膜裝置241會至少&份 10 1337510The illustrated LITI device includes a reaction chamber 21A, a substrate support 26A, a contact frame 230, and a laser source or oscillator 220. The reaction chamber 210 provides a space for processing the intermediate (or partially fabricated) electronic device 250 with a film supply unit 24 1 . The substrate support 260 is configured to support the intermediate device 250 and the film supply device 241. The contact frame 23 is movably coupled to the reaction chamber 21A to provide a downward weight on the film supply unit 241. In a particular embodiment, the contact frame 230 can be omitted. The film supply device 241 includes a transferable layer (not shown). The transferable layer is transferred to the intermediate device via a laser. A laser oscillator 220 is disposed above the contact frame 23A. The laser oscillator 220 is configured to illuminate a laser over the film supply device 241 via the contact frame. In one embodiment, the LITI device 200 operates as follows. First, the intermediate device 250 is introduced into the reaction chamber 21A and placed over the substrate support 260. Next, the supply device 24A is placed above the intermediate device 250. The film supply device 241 will at least & 10 1337510

接觸該中間裝置250。利用一磁,wm丄 W用磁性作用力擠壓該供膜裝 241,使其抵頂該中間裝置25 步驟期間,該可轉印 層會緊密地接觸該中間裝置。該雷射振盈H 220會被啟動 以將-雷㈣射在該供縣£ 241之上n該可轉印 層便會從該供膜裝置241被轉印至該令間裝置25〇。The intermediate device 250 is contacted. With a magnetic force, wm 丄 W presses the film supply unit 241 with a magnetic force to abut the intermediate unit 25, and the transfer layer closely contacts the intermediate unit. The laser oscillation H 220 is activated to shoot the - Ray (4) over the county 241. The transfer layer is transferred from the film supply unit 241 to the inter-unit device 25A.

圖3所示的係LITI設備·的概略分解圖。圖中以虛 線來表示反應t 21G。於圖中所示的實施例中,雷射振盈 器㈣、接觸框架230、以及基板支撐座26〇會彼此相互垂 直對齊。於該Lm製程期間,一中間裝置25〇會被放置在 基板支Μ 260之上,而—供膜裝i 241則會被放置在該 中間裝置250之上。於另一實施例中,前面的組件可能會 具有-不同的排列方式’舉例來說,其可能會具有一相反 配置於°卩伤貫細•例中,該基板支撐座可被配置成從上方 來固定該中間裝置。此類基板支撐座可被稱為基板固定 器。 反應室2 I 0會提供一反應空間’以供進行該Lm製程。 該反應室可能係可於其中施.行該LITI製程的任何合宜密閉 空間。反應室210内容納著該接觸框架23〇與該基板支撐 座260。該反應室還包含一出入口,用以引進或移除該中 間裝置250與該供膜裝置241。於其中一實施例中,該反 應室2 10可被配置成用以提供一真空環境。 於圖中所示的實施例中,該雷射振盪器220雖然係被 設置在該接觸框架230上方,在該反應室210之頂端中央 部份’不過本發明並不限於此。該雷射振盪器22〇會被配 1337510 丨· % 置成用以將一雷射束照射在該供膜裝置24 1之上。圖1 1所 示的便係s玄雷射振盡器220的一實施例。圖申所示的雷射 振盪器220可係一 CW Nd:YAG雷射(1064nm)。該雷射振 盪器220具有兩個電流計掃描器221、222。該雷射振盪器 220還具有一掃描透鏡223與一柱狀透鏡224。熟練的技術 人員將會明白,各種類型的雷射振盪器均可被調適成用以 提供一用於該供膜裝置的雷射。 於圖中所示的實施例中,該接觸框架23〇雖然係被設 • 置在基板支撑座260的上方,不過,本發明並不限於此。 該接觸框架230可透過一輸送單元231,以可移動的方式 被連接至该反應室210的頂端中央部份。該接觸框架23〇 , 具有一接觸板232,其會被配置成用以於該供膜裝置241 上方提供一重量。該接觸板232會經過圖案化,以便露出 下方供膜裝置2 4 1的複數個部份,同時阻隔其它部份。為 露出供膜裝置241的該等部份,該接觸板232會包含複數 個開口 233。該等開口 233可讓該雷射束被導引至該供膜 裝置241的該等部份。此種配置可將該可轉印層的複數個 部份轉印至該中間裝置250上,稍後將作詳細說明。於特 定的實施例中,該LITI設備可不具有任何接觸框架。 於圖中所示的實施例中,基板支撐座26〇係被設置在 反應室210的底部處,不過本發明並不限於此。圖中所示 的基板支撐座260具有一凹;^ 263,用以容納該中間裝置 250。該基板支撲座26〇還會支揮該供膜裝i 241。此外, 該基板支撐座260會於下方提供一基板升降器加以及一 12 1337510 % ,膜裝置升降器266。該基板支擇座26q具有穿透孔26i ”犯,基板升降器265以及供膜|置升降胃施會於垂 直方向中移動穿越該等穿透孔。 令間裝置250會於該LITI塑is :Bb pq、»· n 1成Li 11表程期間破放置在該基板支 牙座260之上。「中間裝置」-詞所指的係具有-表面以 便利用忒UTI製程來形成一有機材料的任何裝置…般來 說’此等裝置係已部份製造完成的電子裝置。於苴中一實 :例中’該中間裝i 25G係-已部份製造完成时機發光 '置。該令間裝置250包含一表面,該可轉印層會被轉印 至该表面上。 該供膜裝置24i會於該LITI製程期間被放置在該中間 4置250之上。於其中一實施例令,該供臈裝置Μ!包含: -基底基板;一光至熱轉換層;以及__可轉印層。稍後將 會作進-步說明。圖中所示的供膜裝4 24ι還包含一包圍 著該供膜裝置241的供膜裝置托盤24〇。該供膜裝置托盤 240會充當一維持框架,用以維持該供膜裝置⑷的形狀。 該可轉印層會於LITI處理期間被排列成面向該中間裝置的 表面。 圖3的抓設備細會使用一則生作用力來讓該供膜 裝置241與該中間裝置25〇之間產生緊密接觸。該磁性作 用力會讓該等裝置241肖25〇緊密接觸,俾使實質上於該 等裝置241與250之間沒有任何空氣間隙或氣泡。 於其中一實施例中,該磁性作用力可由被隔開的兩個 或更多個磁性材料來產生。於實施例中,磁性材料係形成 13 1337510 於s玄LITI系統中被隔開的兩個組件之中,兩個組件之間會 插入可轉印層以及其上要轉印該可轉印層的表面,也就 是,其中一個組件係被設置在該可轉印層的上方,而另— 個組件則係被設置在該表面的下方。此處,「組件」一詞 所指的係s亥LITI製程中所使用的各部件與裝置,其包含中 間裝置250、供膜裝置241、接觸框架23〇、以及基板支撐 座260。於實施例中,磁鐵或磁性材料係形成於該Lm系 統的下面兩個組件之間,不過本發明並不限於此:丨)中間 裝置250與供膜裝置241之間;2)中間裝置25〇與接觸框 架230之間;3)基板支撐座260與供膜裝置241之間;或 是4)基板支撐座260與接觸框架23〇之間。 視情況,s亥等磁性材料可被設置在該UTI系統的下面 組件組合的其中一者之中:5)基板支撐座26〇、中間裝置 250、以及接觸框架230; 6)基板支撐座260、中間裝置250、 以及供膜裝置241 ; 7)基板支撐座260、供膜裝置241、以 及接觸框架230 ;或是8)中間裝置250、供膜裝置241、以 及接觸框架230。於又一實施例中,該磁性材料可被設置 在下面之中:9)基板支撐座260、中間裝置25〇、供膜裝置 24 1、以及接觸框架23〇。熟練的技術人員將會明白,該磁 性材料亦可被設置在特定的其它組件之中,端視一 UTI設 備的設計而定。 4對組件之中的該等磁性材料會被配置成相互吸引, 俾使該供膜裝置241與該中間裝置25〇會於該可轉印層以 及其上要轉印該層的表面之間形成緊密接觸。此處所使用 1337510 的磁性材料」一詞所指的係磁鐵或可磁性吸引的材料中 任一者。除非特別提及,否則「磁鐵」通常可指永久磁鐵 或電磁鐵。此處所使用的「可磁性吸引的材料」一詞所指 的係一非磁鐵但是卻可被磁鐵吸引的材料。於部份實施例 中,該等兩個Lm組件中其中一者可包含一磁鐵,而另一 者則可包含一非磁鐵之可磁性吸引的材料。於其它實施例 中,該等兩個Lm組件中兩者可均包含磁鐵。於特定的實 施例中,含有一磁鐵的組件亦可含有一可磁性吸引的材 料。於所有該等實施例中’料組件所含的磁性材料數量 均足以產生一充份的磁性作用力,用以於該供膜裝置241 與該中間裝置250之間產生緊密接觸。 和吸力不同的係,該磁性作用力可於真空環境中產 生。因此’於料實施例中,可利用於該供膜裝置241與 該中間裝1 250之間磁性引發的接觸,在真空中實施該Lm 製程’而不必破壞真空。另彳’於其它實施例中,該磁性 作用力系統亦可連同該吸力系統一起使用,以改良該Lm 製程。下文料細地說明每-個組件巾之磁鐵或可磁性吸 引的材料的位置與配置。 於其中一實施例中,該可轉印層下方的磁性材料係設 置在該中間裝S 250之中。圓4…B所示的係中間裝置 雜與侧之實施例的概略剖面圖。圖中所示的中間裝 置400A肖_均係已部份製造完成的有機發光裝置 (OLED)。該等中間裝置40从與4〇〇b中每一者均包含: 一基板401、一緩衝層 402、 一薄膜電晶體440、一鈍化層 15 337510 彻、-電極420、以及一像素分割護壁43〇。該薄膜電晶 體 匕3 .絕緣層403、4〇4、-半導體㉟405、-源極 電極彻、-㈣電極術、以及—閘極電極權。該等像 素刀dJ 43 0係形成於該鈍化層彻以及部份電極 的上方’其會露出電極42〇之大部份頂表面。電極42〇將 會充田有機t光一極體的陰極或陽極。該可轉印層將會 形成於該電極420之外露頂表面之上。 於圖4A中’—磁性層他會附著在基板彻的底表 面上。於圖4B中所示的另一實施例中,—磁性層4〇ib則 會被设置在基板401與緩衝層4〇2之間。該 侧包含-磁性材料,下文將作詳細說明。於其;一;施 例中,磁性層4〇la或401b的厚度係介於約5,〇〇〇a與約 ιο,οοοΑ 之間。 於特定的實施例中,該中間裝置可包含被埋置在電極 420下方任何組件(舉例來說,基板4〇1、緩衝層⑽2、絕 緣層403 ' 404、及/或鈍化層4〇9)之中的磁性材料,端視 該裝置的設計而定。於任何情況中’肖中間裝置所含的磁 性材料的數量足以讓該供膜裝置層與該中間裝置產生緊密 接觸。 ” 於又-實施例中,該中間裝置可於該中間裳置的特定 區域中包含複數條磁性材料帶。圖4C所示的係一中間芽 置400C之一實施例的俯視圖。圖中所示的骏置係一已部 份製造完成的有機發光裝置400C。該裝置4〇〇c勺入.一 顯示區460、一資料驅動器431、一掃描驅動器44丨以及A schematic exploded view of the LITI device shown in Fig. 3. The reaction t 21G is indicated by a dotted line in the figure. In the embodiment shown in the figures, the laser vibrator (4), the contact frame 230, and the substrate support 26 are vertically aligned with one another. During the Lm process, an intermediate device 25 is placed over the substrate support 260, and the film supply i 241 is placed over the intermediate device 250. In another embodiment, the front components may have a different arrangement. For example, it may have an opposite configuration. The substrate support can be configured from above. To fix the intermediate device. Such a substrate support can be referred to as a substrate holder. Reaction chamber 2 I 0 will provide a reaction space 'for the Lm process. The reaction chamber may be any suitable confined space in which the LITI process can be applied. The reaction chamber 210 houses the contact frame 23 and the substrate support 260. The reaction chamber also includes an inlet and outlet for introducing or removing the intermediate device 250 and the film supply device 241. In one embodiment, the reaction chamber 20 can be configured to provide a vacuum environment. In the embodiment shown in the figures, the laser oscillator 220 is disposed above the contact frame 230 at a central portion of the top end of the reaction chamber 210. However, the present invention is not limited thereto. The laser oscillator 22 is placed with 1337510 丨· % to illuminate a laser beam onto the film supply unit 24 1 . An embodiment of the sinusoidal laser oscillating device 220 shown in Fig. 11. The laser oscillator 220 shown in Tuschen can be a CW Nd:YAG laser (1064 nm). The laser oscillator 220 has two galvanometer scanners 221,222. The laser oscillator 220 also has a scanning lens 223 and a cylindrical lens 224. Those skilled in the art will appreciate that various types of laser oscillators can be adapted to provide a laser for the film supply device. In the embodiment shown in the drawings, the contact frame 23 is disposed above the substrate supporting base 260, but the present invention is not limited thereto. The contact frame 230 is movably connected to the central portion of the top end of the reaction chamber 210 through a transport unit 231. The contact frame 23A has a contact plate 232 that is configured to provide a weight above the film supply device 241. The contact plate 232 is patterned to expose a plurality of portions of the lower film supply device 241 while blocking other portions. To expose the portions of the film supply device 241, the contact plate 232 will include a plurality of openings 233. The openings 233 allow the laser beam to be directed to the portions of the film supply unit 241. This configuration can transfer a plurality of portions of the transferable layer to the intermediate device 250, as will be described in detail later. In a particular embodiment, the LITI device may not have any contact frames. In the embodiment shown in the drawings, the substrate supporting base 26 is disposed at the bottom of the reaction chamber 210, but the present invention is not limited thereto. The substrate support 260 shown in the drawing has a recess 263 for receiving the intermediate device 250. The substrate holder 26 will also support the film supply unit 241. In addition, the substrate support 260 is provided with a substrate lifter and a 121337510%, membrane device lifter 266 below. The substrate support seat 26q has a penetration hole 26i", and the substrate lifter 265 and the film supply device are moved in the vertical direction to pass through the penetration holes. The intervening device 250 will be in the LITI plastic: Bb pq, »· n 1 is placed on the substrate holder 260 during the Li 11 path. The "intermediate device" - the word refers to the surface to use the 忒UTI process to form an organic material. Devices... Generally, these devices are partially manufactured electronic devices. In the middle of the real one: in the example 'the intermediate installation i 25G series - has been partially manufactured to complete the timing of the light 'set. The inter-installation device 250 includes a surface onto which the transferable layer can be transferred. The film supply unit 24i is placed over the intermediate portion 250 during the LITI process. In one embodiment, the supply device comprises: a base substrate; a light to heat conversion layer; and a __ transferable layer. A step-by-step description will be given later. The film supply unit 4 24 ι shown in the drawing further includes a film supply tray 24 that surrounds the film supply unit 241. The film feeder tray 240 acts as a maintenance frame for maintaining the shape of the film supply device (4). The transferable layer will be arranged to face the surface of the intermediate device during LITI processing. The gripping device of Fig. 3 uses a kinetic force to bring the film feeding device 241 into close contact with the intermediate device 25A. This magnetic force causes the devices 241 to be in close contact with each other such that there is substantially no air gap or air bubble between the devices 241 and 250. In one embodiment, the magnetic force can be generated by two or more magnetic materials that are separated. In an embodiment, the magnetic material forms 13 1337510 among the two components that are separated in the s-thin LITI system, between which the transferable layer and the transferable layer are to be transferred. The surface, that is, one of the components is disposed above the transferable layer, and the other component is disposed below the surface. Here, the term "component" refers to the components and devices used in the LITI process, including the intermediate device 250, the film supply device 241, the contact frame 23A, and the substrate support 260. In an embodiment, a magnet or a magnetic material is formed between the lower two components of the Lm system, although the invention is not limited thereto: between the intermediate device 250 and the film supply device 241; 2) the intermediate device 25 Between the contact frame 230; 3) between the substrate support 260 and the film supply device 241; or 4) between the substrate support 260 and the contact frame 23A. Optionally, a magnetic material such as shai can be disposed in one of the following component combinations of the UTI system: 5) a substrate support 26, an intermediate device 250, and a contact frame 230; 6) a substrate support 260, The intermediate device 250, and the film supply device 241; 7) the substrate support 260, the film supply device 241, and the contact frame 230; or 8) the intermediate device 250, the film supply device 241, and the contact frame 230. In still another embodiment, the magnetic material can be disposed in the following: 9) the substrate support 260, the intermediate device 25, the film supply device 24, and the contact frame 23A. The skilled artisan will appreciate that the magnetic material can also be placed in a particular other component, depending on the design of a UTI device. The magnetic materials among the four pairs of components are configured to attract each other such that the film supply device 241 and the intermediate device 25 are formed between the transferable layer and the surface on which the layer is to be transferred. Close contact. As used herein, the term "magnetic material of 1337510" refers to either a magnet or a magnetically attractable material. Unless specifically mentioned, a "magnet" can generally refer to a permanent magnet or an electromagnet. As used herein, the term "magnetically attractable material" refers to a material that is not a magnet but is attracted to a magnet. In some embodiments, one of the two Lm assemblies can comprise a magnet and the other can comprise a non-magnet magnetically attractable material. In other embodiments, both of the two Lm assemblies may comprise magnets. In a particular embodiment, the assembly containing a magnet may also contain a magnetically attractable material. In all of these embodiments, the amount of magnetic material contained in the material assembly is sufficient to produce a sufficient magnetic force for intimate contact between the film supply device 241 and the intermediate device 250. This force is different from the suction force, which can be generated in a vacuum environment. Thus, in the embodiment of the material, magnetically induced contact between the film supply device 241 and the intermediate device 1 250 can be utilized to perform the Lm process in a vacuum without destroying the vacuum. In other embodiments, the magnetic force system can also be used in conjunction with the suction system to improve the Lm process. The position and configuration of the magnets or magnetically permeable materials of each of the component wipes are described in detail below. In one embodiment, the magnetic material beneath the transferable layer is disposed in the intermediate package S 250. A schematic cross-sectional view of an embodiment of the intermediate device shown in the circle 4...B. The intermediate device 400A shown in the drawing is an organic light-emitting device (OLED) which has been partially manufactured. Each of the intermediate devices 40 includes a substrate 401, a buffer layer 402, a thin film transistor 440, a passivation layer 15 337510, an electrode 420, and a pixel dividing wall 43. Hey. The thin film transistor 匕3, the insulating layer 403, 4〇4, the semiconductor 35405, the source electrode, the - (four) electrode, and the gate electrode. The pixel knives dJ 43 0 are formed over the passivation layer and over the partial electrodes, which expose most of the top surface of the electrode 42. The electrode 42 will fill the cathode or anode of the organic t-light body. The transferable layer will be formed over the exposed top surface of the electrode 420. In Figure 4A, the magnetic layer will adhere to the bottom surface of the substrate. In another embodiment shown in Fig. 4B, the magnetic layer 4 〇 ib is disposed between the substrate 401 and the buffer layer 4 〇 2 . This side contains - a magnetic material, which will be described in detail below. In the embodiment, the thickness of the magnetic layer 4〇la or 401b is between about 5, 〇〇〇a and about ιο, οοοΑ. In a particular embodiment, the intermediate device can include any component that is embedded under the electrode 420 (eg, substrate 4, buffer layer (10) 2, insulating layer 403 '404, and/or passivation layer 4〇9). The magnetic material in the middle depends on the design of the device. In any case, the amount of magnetic material contained in the intermediate device is sufficient to bring the film feeder layer into intimate contact with the intermediate device. In an embodiment, the intermediate device can include a plurality of strips of magnetic material in a particular region of the intermediate skirt. A top view of an embodiment of an intermediate bud 400C shown in FIG. 4C is shown. The device is a partially manufactured organic light-emitting device 400C. The device 4c is inserted into a display area 460, a data driver 431, a scan driver 44A, and

^連接410與421。顯示區46〇包含呈現矩陣形式複 盘固像素470。圖中所示之裝置彻c包含磁性材料帶心 ” 45〇b。於圖中所示的實施例中,該等磁性材料帶450a 係被設置在顯示區偏外面的周圍區域中。此外,該等磁 性材料帶侧則係形成於顯示區460之中。圖中所示的磁 !·生材料V 450b實質上相互平行。於其它實施例中,該等磁 性材料帶係形成於該像素區域之中,而非形成於該等周圍 區域之中。熟練的技術人員將會明白,亦可使用各種其它 磁性材料帶配置來提供一磁性作用力。^ Connect 410 and 421. Display area 46A includes a composite matrix 470 in the form of a presentation matrix. The device shown in the drawing includes a core of magnetic material "45" b. In the embodiment shown in the drawing, the magnetic material strips 450a are disposed in a peripheral area outside the display area. Further, the The magnetic material strip side is formed in the display region 460. The magnetic materials V 450b shown in the drawing are substantially parallel to each other. In other embodiments, the magnetic material strips are formed in the pixel region. Medium, rather than being formed in such surrounding areas, the skilled artisan will appreciate that a variety of other magnetic material strip configurations can be used to provide a magnetic force.

於其中一實施例中,該磁性材料可係一磁鐵,其包含 永久磁鐵或電磁鐵。該永久磁鐵可能係鋁鎳鈷磁鐵、鐵氧 磁鐵、稀土磁鐵、橡膠磁鐵、或是塑膠磁鐵。該永久磁鐵 可具有選自下面的至少其中一種形式:平板狀、片狀、晶 片狀、棒狀、以及顆粒狀。於其中一實施例中,該永久磁 鐵可係奈米級的磁性顆粒、磁性平板、磁性片、磁性晶片、 或是磁性棒。此等奈米級顆粒可利用旋塗法、電子束沉積 法、或是噴墨沉積法沉積於該中間裝置的一組件的一表面 上。於其它實施例中,該等磁性平板、磁性片、磁性晶片、 磁性棒 '以及磁性顆粒亦可大於奈米級大小。 該永久磁鐵實質上可實質均勻地被散佈在磁性層401a 或401b之中。於另一實施例中,磁性層401a或401b可僅 於其上要轉印該可轉印層的區域中具有永久磁鐵部份。於 又一實施例中,該磁性層可能係由一永久磁鐵所製成的單 一平板。 17 於另一貫施例中,該磁性材料可係一電磁鐵。該電磁 纖可具古;s & π 綠闽下面的至少其中一種形式:螺線管以及環形 给 螺線s所指的係一形成一直線管形狀的線圈。環形 形圈所心的係-形成—甜甜圈形狀的線圈。一般來說,環 ^圈Hf曲而使得兩端交合的螺線管。於部份實施 :’-螺線管或環形線圈可於該線圈内包含一由順磁或 2材料(舉例來說,鐵)所製成的核芯。因為—電磁鐵需 要一電流來磁化,所以,該電磁鐵會經由一導線連接至一 :卜部電源。於其中—實施例中,該中間裝置的一非顯示區 ° 3叹°十用來電連接該電磁鐵的一或多個電極。該(等) 電極會被配置成用以接收來自一外部電源的電力。此外, ^等)電極會經由該(等)導線連接至該電磁鐵。於實施例 一该(等)電極可形成於要納入該電磁鐵的裝置或主體的 1表面上’以便電連接至該外部電源。於其它實施例中, 該(等)電極可突出於要納入該電磁鐵的裝置或主體的外 面於由中間裝置所構成的一最終完成的電子裝置中,該(等) 電極可能不會發揮作用且會被埋置在一介電材料之中。和 水久磁鐵相同的係,該電磁鐵可實質上均勾或不均勾地被 散佈,端視該中間裝置的設計而定。 ; 實把例甲,該磁性材料可係一可磁性吸引的材 料’但並不是磁鐵。該可磁性吸引的材料的範例包含,但 不限於· Fe、Ni、Cr、Fe2〇3、、C〇Fe2〇4、MnFe〇4、 它們的合金、以及前述材料二或更多者的混合物。可磁性 吸引的材料的其它範例可包含塑移磁性材料與㈣磁性材 18 1337510 料。和永久磁鐵相同的係,該可磁性吸引的材料可具有選 自下面的至少其中一種形式:平板狀、片狀、晶片狀、棒 狀、以及顆粒狀。它們可係奈米大小甚至更大的顆粒。該 可磁性吸引的材料可均勻地被散佈在磁性層4〇1&或b之 中。於另一實施例中,磁性層401 a或b可僅於其上要轉 印該可轉印層的區域中具有可磁性吸引的材料部份。於又 一實施例中,該磁性層可由該可磁性吸引的材料所製成的 單一平板。 於另一實施例中,位於該可轉印層下方的磁性材料可 被設置在該基板支撐座之_。圖5A與5β所示的係含有該 磁性材料的基板支撐座260的一實施例。圖中所示的基板 支撐座260會於一凹寫下方的一區域263(圖中以虛線來顯 不)中包含複數個電磁鐵264。圖中所示的該等電磁鐵264 會對齊於垂直方向中。不過,該等電磁鐵亦可被排列成各 種其匕配置’端視該基板支律座的設計而定。該等電磁鐵 亦可具有上面針對該中間裝置所述的各種形狀與配置。於 特定的實施例中’該磁性材料可係上面針對該中間裝置所 述的永久磁鐵或可磁性吸引的材料。 於其中一實施例十,位於該可轉印層上方的磁性材料 可被設置在該供膜裝置之中。圖6A至6C所示的係根據實 施例的供膜裝置600A至600C的部份剖面圖。該等供膜裝 置600A至600C中每一者均包含:—基底基板6〇1 ; 一位 於該基底基板601上方的光至熱轉換層602; —位於該光 至熱轉換層602上方的中間層603 ;以及一位於該中間層 19 1337510In one embodiment, the magnetic material can be a magnet comprising a permanent magnet or an electromagnet. The permanent magnet may be an alnico magnet, a ferrite magnet, a rare earth magnet, a rubber magnet, or a plastic magnet. The permanent magnet may have at least one selected from the group consisting of a flat plate, a sheet, a wafer, a rod, and a pellet. In one embodiment, the permanent magnet may be a nano-sized magnetic particle, a magnetic plate, a magnetic sheet, a magnetic wafer, or a magnetic rod. These nano-sized particles may be deposited on a surface of a component of the intermediate device by spin coating, electron beam deposition, or inkjet deposition. In other embodiments, the magnetic plates, magnetic sheets, magnetic wafers, magnetic rods, and magnetic particles may also be larger than the nanometer size. The permanent magnet can be substantially uniformly dispersed in the magnetic layer 401a or 401b. In another embodiment, the magnetic layer 401a or 401b may have a permanent magnet portion only in a region on which the transferable layer is to be transferred. In yet another embodiment, the magnetic layer may be a single plate made of a permanent magnet. In another embodiment, the magnetic material can be an electromagnet. The electromagnetic fiber may have at least one of the following forms: s & π green cymbal: a solenoid and a ring to which the spiral s is referred to form a coil in the shape of a straight tube. The system of the heart of the toroidal ring - forming a coil of donut shape. In general, the loop Hf is curved so that the two ends meet the solenoid. In some implementations: '- A solenoid or toroidal coil may contain a core made of paramagnetic or 2 material (for example, iron) within the coil. Because the electromagnet needs a current to magnetize, the electromagnet is connected to a power supply via a wire. In the embodiment, a non-display area of the intermediate device is used to electrically connect one or more electrodes of the electromagnet. The (etc.) electrode is configured to receive power from an external power source. In addition, ^ etc.) the electrode is connected to the electromagnet via the (etc.) wire. In the first embodiment, the (equal) electrode may be formed on the surface of the device or body to be incorporated into the electromagnet to be electrically connected to the external power source. In other embodiments, the (equal) electrode may protrude from the outside of the device or body to be incorporated into the electromagnet into a final completed electronic device formed by the intermediate device, and the (etc.) electrode may not function. And will be buried in a dielectric material. The same system as the long-lasting magnet, the electromagnet can be substantially uniformly or unevenly spread, depending on the design of the intermediate device. For example, the magnetic material can be a magnetically attractable material 'but not a magnet. Examples of the magnetically attractable material include, but are not limited to, Fe, Ni, Cr, Fe2〇3, C〇Fe2〇4, MnFe〇4, alloys thereof, and mixtures of two or more of the foregoing materials. Other examples of magnetically attractable materials may include plastically displaced magnetic materials and (iv) magnetic materials 18 1337510. The same structure as the permanent magnet, the magnetically attractable material may have at least one of the following forms selected from the group consisting of a flat plate, a sheet, a wafer, a rod, and a pellet. They can be granules of even larger size. The magnetically attractable material can be evenly dispersed in the magnetic layer 4〇1& or b. In another embodiment, the magnetic layer 401a or b may have a magnetically attractable portion of the material only in the region over which the transferable layer is to be transferred. In yet another embodiment, the magnetic layer can be a single plate made of the magnetically attractable material. In another embodiment, a magnetic material underlying the transferable layer can be disposed on the substrate support. An embodiment of the substrate support 260 including the magnetic material shown in Figs. 5A and 5?. The substrate support 260 shown in the drawing will include a plurality of electromagnets 264 in a region 263 (shown in phantom in the figure) below a recess. The electromagnets 264 shown in the figures are aligned in the vertical direction. However, the electromagnets can also be arranged in a variety of configurations depending on the design of the substrate holder. The electromagnets can also have various shapes and configurations as described above for the intermediate device. In a particular embodiment, the magnetic material can be a permanent magnet or a magnetically attractable material as described above for the intermediate device. In one of the tenth embodiments, a magnetic material located above the transferable layer may be disposed in the film supply device. Figures 6A to 6C are partial cross-sectional views of the film supply devices 600A to 600C according to the embodiment. Each of the film supply devices 600A to 600C includes: a base substrate 6〇1; a light-to-heat conversion layer 602 over the base substrate 601; an intermediate layer above the light-to-heat conversion layer 602 603; and one located in the middle layer 19 1337510

603上方的可轉印層6〇4。視情況’該等供膜裝置還可包含 —介於中間層603與可轉印層604的緩衝層(圖中未顯示)。 基底基板601係用於提供該供膜裝置具有一膜結構。 該基底基板001可由一透明聚合物所製成。該透明聚合物 的範例包含但並不限於:聚乙烯、聚酯、聚對笨二甲酸乙 酯、聚丙烯酸脂、聚環氧樹脂、以及聚苯乙烯。該基底基 板6〇1的厚度介於約1〇/zm與約500//m之間,視情況, 亦可能介於約100 " m與約4〇〇 β m之間。The transferable layer 6〇4 above 603. Optionally, the film supply means may further comprise - a buffer layer (not shown) interposed between the intermediate layer 603 and the transferable layer 604. The base substrate 601 is for providing the film supply device to have a film structure. The base substrate 001 can be made of a transparent polymer. Examples of such transparent polymers include, but are not limited to, polyethylene, polyester, polyethylene terephthalate, polyacrylate, polyepoxy, and polystyrene. The base substrate 6〇1 has a thickness of between about 1 〇/zm and about 500//m, and optionally between about 100 " m and about 4 〇〇 β m.

光至熱轉換層602會被配置成用以吸收雷射且將其轉 換成熱。該轉換層602包含一吸光材料。該吸光材料的光 學岔度可約0.1至約〇 4 ^該吸光材料可包含:金屬、金屬 氧化物、及/或有機材料。該金屬/金屬氧化物的範例包含 但並不限於:鋁、銀、鉻、鎢、錫、鎳、鈦、鈷、鋅、金、The light to heat conversion layer 602 is configured to absorb the laser and convert it to heat. The conversion layer 602 comprises a light absorbing material. The light absorbing material may have an optical intensity of from about 0.1 to about ^ 4 ^. The light absorbing material may comprise: a metal, a metal oxide, and/or an organic material. Examples of the metal/metal oxide include, but are not limited to, aluminum, silver, chromium, tungsten, tin, nickel, titanium, cobalt, zinc, gold,

銅、箱、錯、以及前述金屬的氧化物。該有機材料可包含 光合成材料。該有機材料的範例包含由甲基丙烯酸單體或 寡聚體所製成的聚合物’如丙烯酸型(曱基)丙烯酸酯募聚 體、酯型(曱基)丙烯酸酯寡聚體、環氧樹脂型(甲基)丙烯酸 酯寡聚體、胺基甲酸酯型(甲基)丙烯酸酯寡聚體、…等, 或疋則述系合物中二或更多者的混合物。此外,轉換層602 還可包含其它的添加物,如碳黑、石見、或紅外線染料。 光至熱轉換層6〇2的厚度可改變,端視該等吸光材料 與製造方法而定。舉例來說,當使用真空沉積法、雷射束 /儿積法、或疋賤錄法時’該轉換層的厚度便可介於約1 5000A之間 至約 於另一實施例中,當使用擠壓塗佈法、 20 凹印塗佈法、旋塗法、以及到塗法時 可介於約0 1至約? 夺’ 5玄轉換層的厚度便 J 主約2 # m之間。 中間層603的功能係用來保 於其令—音妒A,尖 叉x尤玍热轉換層602。 實轭例中,該中間層6 中間層601讦尨a 士 八有很同的耐熱性。該 胺… 係由有機材料或無機材料所製成,如聚亞醯 胺。遠中間層603的厚产介於的、 &亞酿 於特定^ 的知度;1於約1㈣至約1.5心之間。 、,的貫施例中,該中間層可被省略。 可轉2印60層4 6〇4係一要被轉印至該中間裝置上的層。該 有Li二一有機材料所構成。於該電子_ -有機發以置的實施财,該材料可係 不過,該材料亦可仵用於機發先材枓。 u ·)係用於構成该有機發 ::的:它有機材料。此等其它元件包含但並不::: 及電洞傳輸層_)、電子注入層_、以 及電子傳輸層(ETL)。於苴它雷;_ & 黽千裝置中,適合構成一目 標組件的任何材料均可# A #iu < 叶1 了作為5玄可轉印層的材料。該可轉印 層604的厚度介於約2〇〇α至約 主扪1,000Α之間。該可轉印層 604可利用任何合宜的方 ^ 乃次采構成,舉例來說,擠壓塗佈 法、凹印塗佈法、旋塗法、 忘刮塗法、真空沉積法、或是化 學氣相沉積法(CVD)。 該緩衝層(圖中未顯示)係用來改良可轉印層604的轉 印特性。該緩衝層可能合合丁 ; ... 巴3下面一或多者:金屬氧化物、 金屬硫化物、非金屬蛊摟仆人ΑΑί 、„丄 …機化合物、以及有機材料。該等無 機化合物的範例包含Α丨、Aue該等有機材料的範例包含聚 亞酿胺。 21 1337510 現在參考圖6A,該光至熱轉換層6〇2包含 料。舉例來說,該光至熱轉換層6〇2 弋赍讲雄 从“ 匕3 —水久磁鐵及/ 或電磁鐵。於其它實施例中,該轉換層6〇2可包含一可磁 性吸引的材料。該磁性材料可能具有上面針對該中間裝置 所述的各種配置。於其它實施例 v 卢I产贫化 °玄磁性材料可被埋置 底基板6G1或中間層㈤之中。於料的實施例中, 〜磁性材枓可被埋置在下面至少兩者之中:基底基板術、 先至熱轉換層602、以及中間層6()3。於其它實施例中, 該磁性材料可僅會被埋置在該等層6〇1至6们中一或多者 的特定部份之中,而非整層之中。舉例來說,料層夕⑷ 至603中-或多者可僅於該可轉印層中要被轉印至該中間 裝置的部份下方包含磁性材料, 現在參考圖6B與6C’供膜裝置6〇〇B與6〇〇c包含一 磁性層605。該磁性層6〇5包含一如下的磁性材料:永久 磁鐵、電磁鐵、及/或可磁性吸引的材料。該磁性材料可能 具有上面針對該令間裝置所述的各種配置。 於圖6B中,供骐裝置6〇〇B於基底基板6〇丨與光至熱 轉換層602之間包含該磁性層605。於圖6C中,供膜裝置 600C於光至熱轉換層602與中間層6〇3之間包含該磁性層 605。於另一實施例中,該供臈裝置可於中間層6〇3與可轉 印層604之間插置該磁性層。於又一實施例中,該供膜裝 置可於基底基板601中背對該光至熱轉換層602的一底表 面上包含該磁性層。於特定的實施例中,該供膜裝置可於 該等層601至604中連續兩層之間插至二或更多磁性層。 22 1337510 m • 於此等實施例中,一磁性材料可進一步被埋置在下面至少 一者之中:基底基板601、光至熱轉換層602、以及中間 層603。熟練的技術人員將會明白,該等磁性層的配置與 組合均可改變’端視該供膜裝置的設計而定。 於另一實施例中’位於該可轉印層上方的磁性材料可 被設置在該接觸框架之中。圖7所示的便係接觸框架23〇 的一實施例。圖中所示的接觸框架230包含一被埋置在該 框架之中的磁性材料。該磁性材料可係上面針對該中間裝 _ 置所述的永久磁鐵或電磁鐵。於另一實施例中,該磁性材 料亦可係如上述之可磁性吸引的材料。 於特定的實施例中,該接觸框架230可包含—分離的 磁性層《該磁性層包含一上面針對該中間裝置所述的磁性 材料。該磁性層可被附著至該接觸框架230之頂表面與底 表面中至夕其中一者β於另一實施例中,該磁性層可被埋 置在該接觸框架230之中。於此等實施例中,該層會被圖 φ 案化,以便具有對應於該接觸框架中各開口的開口。該接 觸框架與該層中的開口可讓雷射束被導向該供膜裝置24ι 的複數個部份。此配置允許將該可轉印膜選擇性地轉印至 4中間裝置25G之上。於另—實施例中,該接觸框架本身 可由該磁性材料所構成。於前面所有的實施例中,該接觸 框架所含的磁性材料的數量足以提供一磁性作用力^用以 擠麼該供膜裝置,使其抵頂該中間裝置。 f射引發的熱成谭臂铝 根據本發明各實施例的雷射引發的熱成像(LITI)製程 23Copper, box, wrong, and oxides of the foregoing metals. The organic material may comprise a photosynthetic material. Examples of the organic material include a polymer made of a methacrylic acid monomer or oligomer such as an acrylic (mercapto) acrylate polymer, an ester (mercapto) acrylate oligomer, and an epoxy. A resin type (meth) acrylate oligomer, a urethane type (meth) acrylate oligomer, etc., or a mixture of two or more of the conjugates. In addition, the conversion layer 602 may also contain other additives such as carbon black, stone see, or infrared dyes. The thickness of the light to heat conversion layer 6〇2 can be varied depending on the light absorbing materials and the manufacturing method. For example, when using a vacuum deposition method, a laser beam/child method, or a recording method, the thickness of the conversion layer can be between about 15,000 A to about another embodiment, when used. Can the extrusion coating method, the 20 gravure coating method, the spin coating method, and the coating method be between about 0 1 and about? The thickness of the 5th metamorphic layer is J. The main is about 2 #m. The function of the intermediate layer 603 is to maintain its tone A, the tines x, and the heat transfer layer 602. In the solid yoke example, the intermediate layer 6 has an identical heat resistance to the intermediate layer 601讦尨a. The amine is made of an organic material or an inorganic material such as polyamidamine. The intermediate layer 603 has a high yield between the & bristles of a particular ^; 1 between about 1 (four) and about 1.5 hearts. In the embodiment, the intermediate layer may be omitted. It can be transferred to 2 layers of 60 6 4 4 4 to be transferred to the layer on the intermediate device. The Li two organic material is composed of. In the case of the electronic _ - organic hair, the material can be used, but the material can also be used for machine hair. u ·) is used to form the organic hair ::: it is an organic material. These other components include, but are not::: and hole transport layer _), electron injection layer _, and electron transport layer (ETL). In the 苴 &; 黾 装置 device, any material suitable for constituting a target component can be # A #iu < leaf 1 is a material for the 5 meta-transferable layer. The transferable layer 604 has a thickness of between about 2 〇〇 α and about 1,000 Å. The transferable layer 604 can be formed by any suitable method, for example, extrusion coating, gravure coating, spin coating, forgetting coating, vacuum deposition, or chemistry. Vapor deposition (CVD). This buffer layer (not shown) is used to improve the transfer characteristics of the transferable layer 604. The buffer layer may be combined with one or more of: one or more of the following: metal oxides, metal sulfides, non-metal servants, organic compounds, and organic materials. Examples of such inorganic compounds An example of an organic material comprising ruthenium, Aue, or the like comprises a poly-branched amine. 21 1337510 Referring now to Figure 6A, the light to heat conversion layer 6 〇 2 comprises a material. For example, the light to heat conversion layer 6 〇 2 弋赍 赍 从 from " 匕 3 - water long magnets and / or electromagnets. In other embodiments, the conversion layer 6〇2 may comprise a magnetically attractable material. The magnetic material may have various configurations as described above for the intermediate device. In other embodiments, the deuterium material can be buried in the base substrate 6G1 or the intermediate layer (5). In an alternate embodiment, the ~magnetic material can be embedded in at least two of: a base substrate, a thermal conversion layer 602, and an intermediate layer 6 () 3. In other embodiments, the magnetic material may only be embedded in a particular portion of one or more of the layers 6〇1 through 6, rather than in the entire layer. For example, in the layer (4) to 603 - or more, the magnetic material may be contained only under the portion of the transferable layer to be transferred to the intermediate device, and now referring to FIGS. 6B and 6C' film supply device 6〇〇B and 6〇〇c include a magnetic layer 605. The magnetic layer 6〇5 comprises a magnetic material: a permanent magnet, an electromagnet, and/or a magnetically attractable material. The magnetic material may have various configurations as described above for the intervening device. In Fig. 6B, the supply device 6A includes the magnetic layer 605 between the base substrate 6A and the light-to-heat conversion layer 602. In Fig. 6C, the film supply device 600C includes the magnetic layer 605 between the light-to-heat conversion layer 602 and the intermediate layer 6〇3. In another embodiment, the supply device can interpose the magnetic layer between the intermediate layer 6〇3 and the transmissible layer 604. In still another embodiment, the film supply device can include the magnetic layer on a bottom surface of the base substrate 601 facing away from the light-to-heat conversion layer 602. In a particular embodiment, the film supply device can be inserted into two or more magnetic layers between successive layers of the layers 601 through 604. 22 1337510 m • In these embodiments, a magnetic material may be further embedded in at least one of: a base substrate 601, a light to heat conversion layer 602, and an intermediate layer 603. Those skilled in the art will appreciate that the configuration and combination of the magnetic layers can vary depending on the design of the film supply device. In another embodiment, a magnetic material positioned above the transferable layer can be disposed within the contact frame. An embodiment of the contact frame 23A shown in Fig. 7 is shown. The contact frame 230 shown in the drawing includes a magnetic material embedded in the frame. The magnetic material may be a permanent magnet or an electromagnet as described above for the intermediate device. In another embodiment, the magnetic material may be a magnetically attractable material as described above. In a particular embodiment, the contact frame 230 can include a separate magnetic layer "the magnetic layer comprising a magnetic material as described above for the intermediate device. The magnetic layer may be attached to one of the top and bottom surfaces of the contact frame 230, in another embodiment, the magnetic layer may be embedded in the contact frame 230. In such embodiments, the layer will be patterned to have openings corresponding to the openings in the contact frame. The contact frame and the opening in the layer allow the laser beam to be directed to a plurality of portions of the film supply unit 24i. This configuration allows the transferable film to be selectively transferred onto the intermediate device 25G. In another embodiment, the contact frame itself may be constructed of the magnetic material. In all of the foregoing embodiments, the contact frame contains a sufficient amount of magnetic material to provide a magnetic force for squeezing the film supply device against the intermediate device. F-induced thermal-induced tan arm aluminum laser-induced thermal imaging (LITI) process in accordance with various embodiments of the present invention 23

/ J1U 磁性作用力來讓-供媒裝置與-中間裝置之間產 阁被接觸。圖8所示的便係該UTI製程的一實施例的流 首先’於步驟81"’ —中間裝置謂會被放置在一 ^支樓座260之上。於此步驟期間,該中間裝i 會 2幻壬何合宜的移動機制(舉例來說’機器人機制)來移動。 於乂驟820中’一供膜裝i 241會被放置在該中間 =250之上。首先,該供膜裝£ μ會垂直地對齊該中 # 7置250使其可轉印層面朝下。接著,該供膜裝置241 :更會向下移至該中間裝置25〇之上。該可轉印層的至少一 #份會接觸該中間裝f 。a 土挪 装置250和步驟810相同,該供膜裝 置241可藉由該移動機制來移動。 ;步驟830中會提供一磁性作用力來擠壓該供膜裝置 41 ’使其抵頂該中間裝置25〇。該磁性作用力可由被設置 在上述LITI組件中的兩個組件之中的磁性材料所產生的, =-組件係位於該可轉印層的上方,而另一組件則係位 於其上要轉印該層的表面的下方。於部份實施例中,該等/ J1U Magnetic force to allow the chamber between the media supply and the intermediate device to be contacted. The flow of an embodiment of the UTI process shown in Figure 8 is first 'in step 81"'- the intermediate device is said to be placed over a support 260. During this step, the intermediate device will move in accordance with the appropriate movement mechanism (for example, the "robot mechanism"). In step 820, a film supply i 241 is placed above the middle = 250. First, the film supply will be vertically aligned with the #7 set 250 so that the transferable layer faces down. Then, the film supply device 241: will move down to the intermediate device 25A. At least one of the transferable layers contacts the intermediate package f. a soil removing device 250 is the same as step 810, and the film feeding device 241 can be moved by the moving mechanism. A magnetic force is applied in step 830 to squeeze the film supply unit 41' against the intermediate unit 25'. The magnetic force can be generated by a magnetic material disposed in two of the above-described LITI components, the component is located above the transferable layer, and the other component is placed thereon for transfer Below the surface of the layer. In some embodiments, such

兩個LITI組件中立A '、 了匕3 一磁鐵;而另一者則可包 S 一非磁鐵但可磁性吸引的材料。於其它實施例中,該等 兩個UTI組件兩者可均包含磁鐵。該磁鐵可包含-永久磁 鐵及/或電磁鐵。於該磁鐵含-電磁鐵的—實施例中,該磁 性作用力可相依於該LITI製程的需求而以時選的方式來產 生於特疋的實施例中,含有__磁鐵的㈣㈣ 磁性吸引的材料。 24 1337510 於此步驟中,該磁性作用力會推擠該供 使其抵頂該中間裝置250,其會讓該可 '褒置241 ’ 觸其上要轉印該層的表面。於此製程更緊密地接 膜裝置241與該中間裝置25〇之間所有或至少::於:該供 氣間隙或氣泡。此步驟有助於將該二部份的空 裝置25。之上。 褥P層轉印至該中間 於步驟840中’―雷射會被照射在該供膜褒置241上 該雷射會提供用於將該可轉印層轉印至該中間裝置 的必要熱能。於此步驟中,-雷射振盈器22。會被啟動上 以便將-雷射照射在該供膜裝置241的頂表面上。 -具有複數個開口之接觸框$ 23Q的—實施例中,該 會穿過該等開π並且抵達該供膜裝置241的該了貝表面。於 此製程期間’該雷射會被導向該供膜裝置241中的選定區 域處。該雷射會經由該基底基板抵達該供膜…41的光 至熱轉換層。該光至熱轉換層會將該光能轉換成熱能,用 以產生熱。錢會被傳輸至該可轉印層中的選定部份處。 藉由此製程,該可轉印層φ沾姑你 中的該專部份便會從該供膜裝置 川中被釋出’並且被轉印至該中間裝置m。於未使用任 何接觸框架的另一實施你丨φ T她例中’雷射則會被選擇性地照射在 該供膜裝置241之頂表面的特定部份上。 而後,於步驟850巾,會從該中間裝置250上方移除 該供膜裝i⑷,留下該中間裝置250之頂表面上該可轉 P層的複數個部份。可利用和步㉟中所使用之相同的 移動機制來移除該供膜裝置241。 25 1337510 現在參考圖9A至9F,一中間裝置250會被引入一轉 移室900之中。該中間裝置250係被放置在該轉移室900 中的一機器人手臂920的一末端效應器91〇之上。而後, a玄中間裝置250便會被輸送至一 LITI反應室21〇之中,如 圖9B中所示。接著,該中間裝置250便會被放置在一基 板支撐座260之上,如圖9c中所示。 接著,一供膜裝置241便會被放置在該末端效應器91〇 之上,如圖9C中所示。而後,該供膜裝置241便會被引 入。玄LITI反應室210之中,如圖9D中所示。該供膜裝置 241會垂直對齊該中間裝置25〇。接著,該供膜裝置24丨便 會向下移至該中間裝置250之上,如圖9E中所示。接著, 便會從該LJT〗反應室2】〇之中取出該末端效應器91〇。而 後,便#關閉-問Μ 930,以便提供一密閉的反應室。於 其中一實施例中,於該些步驟期間,會於整個轉移室與uTi 反應室中保持一真空環境。 視情況,可於該供膜裝置之上提供一接觸框架。於圖 9F中’該接觸框架230會向下移動至該供膜裝置μ〗上方。 該接觸« 230會於該供膜裝f 241上方提供 與該中間裝置250 ’該接觸框架可被 接觸框架23〇可幫助於該供膜裝置241 之間產生緊密接觸。於其它的實施例中Two LITI components are neutral A ', 匕 3 one magnet; the other can include S a non-magnet but magnetically attractable material. In other embodiments, both of the two UTI components can include a magnet. The magnet may comprise a permanent magnet and/or an electromagnet. In the embodiment of the magnet-electromagnet-containing magnet, the magnetic force can be generated in a selective manner in accordance with the requirements of the LITI process in a special embodiment, containing (4) (4) magnetic attraction of the magnet. material. 24 1337510 In this step, the magnetic force pushes it against the intermediate device 250, which causes the "mount" 241 to touch the surface on which the layer is to be transferred. This process more closely connects or at least: between: the air supply gap or the air bubble between the filming device 241 and the intermediate device 25A. This step facilitates the two-part empty device 25. Above. The 褥P layer is transferred to the middle in step 840. The laser is irradiated onto the film supply 241. The laser provides the necessary thermal energy for transferring the transferable layer to the intermediate device. In this step, - the laser oscillator 22 is used. It will be activated to irradiate - the laser on the top surface of the film supply device 241. - In the embodiment of the contact frame $23Q having a plurality of openings, this will pass through the opening π and reach the surface of the film supply device 241. During this process, the laser will be directed to selected areas of the film supply unit 241. The laser will reach the light-to-heat conversion layer of the film 41 through the base substrate. The light to heat conversion layer converts the light energy into thermal energy for generating heat. Money is transferred to selected portions of the transferable layer. By this process, the specific portion of the transferable layer φ is released from the film supply device and transferred to the intermediate device m. In another implementation where no contact frame is used, the laser will be selectively irradiated onto a particular portion of the top surface of the film supply device 241. Then, in step 850, the film supply i (4) is removed from above the intermediate device 250, leaving a plurality of portions of the convertible P layer on the top surface of the intermediate device 250. The film supply device 241 can be removed using the same movement mechanism as used in step 35. 25 1337510 Referring now to Figures 9A through 9F, an intermediate device 250 will be introduced into a transfer chamber 900. The intermediate device 250 is placed over an end effector 91A of a robotic arm 920 in the transfer chamber 900. Then, a meta-intermediate device 250 is transported into a LITI reaction chamber 21, as shown in Fig. 9B. The intermediate device 250 is then placed over a substrate support 260, as shown in Figure 9c. Next, a film supply device 241 is placed over the end effector 91A as shown in Fig. 9C. Then, the film supply device 241 is introduced. Among the mysterious LITI reaction chambers 210, as shown in Fig. 9D. The film supply unit 241 is vertically aligned with the intermediate unit 25A. Next, the film supply unit 24 will be moved down onto the intermediate unit 250 as shown in Fig. 9E. Then, the end effector 91〇 is taken out from the LJT reaction chamber 2〇. Then, it closes - asks 930 to provide a closed reaction chamber. In one embodiment, during these steps, a vacuum environment is maintained throughout the transfer chamber and the uTi reaction chamber. Optionally, a contact frame can be provided over the film supply device. In Fig. 9F, the contact frame 230 is moved downward to the film supply device μ. The contact «230 will be provided over the film supply f 241 and the intermediate device 250'. The contact frame can be contacted with the frame 23 to assist in making intimate contact between the film supply device 241. In other embodiments

接著’俨& & 該供膜裝置4 在該等LITI ’ 26 1337510 中-個組件係位於該可轉印層的下方,而另一個組件則係 位於及可轉印層的上方,如上所述。熟練的技術人員將會 明白,亦可於特定的其它組件中提供該磁性材#,端視一 liti叹備的設計而定。於前面所有的實施例中會於該中 間裝置與該供膜裝置之間施加該磁性作用力,其強度足以 產生接觸,而不會於其間出現任何空氣間隙或氣泡。該等 磁性材料之位置與配置的細節均與上面針對該lit〖設備 述者相同。 圖1 οA至10D所示的係如何將一可轉印層轉印至一中 間裝置上的剖面圖。圖中所示的中間裝置係一已部份製造 完成的有機發光裝f彻。於圖中所示的實施例中,會將 磁性材料設置在該中間裝置與該供膜裝置之中。於其它實 施例中’該等磁性材料亦可被設置在上述的麗設備的其 它組件之中。Next, '俨&&&<> the film supply device 4 in the LITI '26 1337510 - one component is located below the transferable layer, and the other component is located above the transferable layer, as above Said. The skilled artisan will appreciate that the magnetic material # can also be provided in a particular other component, depending on the design of a liti sigh. In all of the foregoing embodiments, the magnetic force is applied between the intermediate device and the film supply device to be strong enough to create contact without any air gaps or bubbles therebetween. The details of the location and configuration of the magnetic materials are the same as those described above for the lit device. Fig. 1 is a cross-sectional view showing how a transferable layer is transferred onto an intermediate device as shown in Figs. The intermediate device shown in the drawing is a partially fabricated organic light-emitting device. In the embodiment shown in the figures, a magnetic material is placed in the intermediate device and the film supply device. In other embodiments, the magnetic materials may also be disposed in other components of the apparatus described above.

現在參考圖,-中間裝置彻包含:一薄膜電晶 體(TFT)結構411、一磁性層4丨3、一電極㈣、以及一像 素分割層430。妹42G的—部份412會經由該像素分割 層430露出。從後面的說明中將更會瞭解,一有機層將會 形成於該外露部份41 2之上。 接著,如圖10B中所示,一供膜裝⑽會被放置在 該中間裝i 400的上方。和上面針對圖6b所述相同者, 該供膜裝置600包含:一基底基板6〇1、一磁性層6〇5、— 光至熱轉換層602、一中間層603、以及一可轉印層6〇4。 該可轉印;| 6G4會至少部份接觸該像素分割層43()的頂表 27 1337510 面,如圖10B中所示。於此步驟期間,會於該供獏裝置6〇〇 與該中間裝置400之間施加一嵫性作用力。 接著’雷射便會被照射至該供膜裝置600的一選定部 份處。該選定部份係被設置在該電極420的外露部份412 上方。該雷射會穿過該基底基板與該磁性層6〇5,並且抵 達該光至熱轉換層602。該光至熱轉換層6〇2會將該光能 轉換成熱能,用以產生熱。該熱會透過中間層6〇3被傳輸 至該可轉印層604。 接著,於收到該熱之後,該可轉印層6〇4的一部份便 會從該供膜裝置600中脫離,並且接觸到該電極42〇的外 露部份412,如0 10C中所示。於圖中所示的實施例中, 轉換層602、中間層603、以及可轉印層6〇4中一部份會與 磁性層605分離。於其它實施例中,則僅有該可轉印層_ 可與該供膜裝置600分離。Referring now to the drawings, the intermediate device includes a thin film transistor (TFT) structure 411, a magnetic layer 4?3, an electrode (4), and a pixel dividing layer 430. The portion 412 of the sister 42G is exposed through the pixel dividing layer 430. As will be understood from the following description, an organic layer will be formed over the exposed portion 41 2 . Next, as shown in Fig. 10B, a film supply (10) is placed above the intermediate package i 400. The film supply device 600 includes a base substrate 〇1, a magnetic layer 〇5, a light-to-heat conversion layer 602, an intermediate layer 603, and a transferable layer, as described above with respect to FIG. 6b. 6〇4. The transferable;|6G4 will at least partially contact the top surface 27 1337510 of the pixel dividing layer 43() as shown in FIG. 10B. During this step, a force is applied between the supply device 6A and the intermediate device 400. The laser will then be illuminated to a selected portion of the film supply unit 600. The selected portion is disposed over the exposed portion 412 of the electrode 420. The laser passes through the base substrate and the magnetic layer 6〇5 and reaches the light to heat conversion layer 602. The light to heat conversion layer 6〇2 converts the light energy into heat energy for generating heat. This heat is transferred to the transferable layer 604 through the intermediate layer 6〇3. Then, after receiving the heat, a portion of the transferable layer 6〇4 is detached from the film supply device 600 and contacts the exposed portion 412 of the electrode 42〇, as in 0 10C. Show. In the embodiment shown in the figures, a portion of the conversion layer 602, the intermediate layer 603, and the transferable layer 6〇4 are separated from the magnetic layer 605. In other embodiments, only the transferable layer can be separated from the film supply device 600.

』而後’如圖10D中所示,會從該中間裝置彻上移除 該供膜裝f 61於此步驟之後,僅有該可轉印層的一部 份604a會殘留在該中間裝置4〇〇之上。 丨土朴用刀來讓該佴腔 裝置與該中間裝置之間產生緊密接 八、 座玍冢在接觸。和吸力不同的係, 此配:於該Lm反應室内並不需要空氣壓力。所以,可於 真空環境中來實施言亥LITI製程。因為Lm製程前後所實 施的製程通Μ樣在真Μ境巾储,心在 二=製程時並不會破壞真空。從沉積該電洞注入: 叫)!程至沉積該第:電極層製程均可保持該真空環境。 28 1337510 此外,該LITI製程還可減低於該供膜與該中間裝置之間出 現雜質或間隙的機會。如此便可改良最終電子裝置的壽 命、產量、以及可靠度。 雖然本文已經顯示且說明本發明的各實施例,不過, 熟練的技術人員將會明白,仍可對該些實施例進行各種變 更,其並不會脫離本發明的原理與精神。本發萌的範疇則 係由隨附的申請專利範圍及它門的等效範圍來界定。 【圖式簡單說明】 圖1所示的係一雷射引發熱成像設備的概略剖面圊。 圖2所不的係根據本發明一實施例的一雷射引發熱成 像設備的概略剖面圖。 圖3所示的係根據本發明一實施例的一雷射引發熱成 像設備的概略分解立體圖。 圖4A與4B所示的係根據本發明實施例之已部份製造 心成的電子裝置的概略剖面圖。 圖4C所示的係根據本發明一實施例之一已部份製造 &成的電子裝·置的概略俯視圖。 ΒΠ - 3Α所示的係根據本發明一實施例的一基板支撐座 的概略立體圖。 圖5Β所示的係圖5Α之基板支撐座沿著直線Μ,所掸 得的概略剖面圖。Then, as shown in FIG. 10D, the film supply unit f 61 is completely removed from the intermediate device. After this step, only a portion 604a of the transferable layer remains in the intermediate device 4〇. Above.丨土朴 uses a knife to make a close connection between the sputum cavity device and the intermediate device. A system different from suction, this configuration: no air pressure is required in the Lm reaction chamber. Therefore, the Yanhai LITI process can be implemented in a vacuum environment. Because the process implemented before and after the Lm process is stored in the real environment, the heart will not destroy the vacuum when the process is two. Injecting this hole from the deposit: Call)! The process of depositing the first: electrode layer can maintain the vacuum environment. 28 1337510 In addition, the LITI process can also reduce the chance of impurities or gaps between the film and the intermediate device. This improves the life, yield, and reliability of the final electronic device. Although various embodiments of the invention have been shown and described herein, it will be understood by those skilled in the art The scope of this issue is defined by the scope of the accompanying patent application and the equivalent scope of its door. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic cross-sectional view of a laser-induced thermal imaging apparatus. 2 is a schematic cross-sectional view of a laser-initiated thermal imaging apparatus in accordance with an embodiment of the present invention. Fig. 3 is a schematic exploded perspective view of a laser-induced thermal imaging apparatus according to an embodiment of the present invention. 4A and 4B are schematic cross-sectional views of an electronic device partially fabricated in accordance with an embodiment of the present invention. Figure 4C is a schematic plan view of an electronic device that has been partially fabricated and fabricated in accordance with one embodiment of the present invention. ΒΠ - 3A is a schematic perspective view of a substrate support according to an embodiment of the present invention. Fig. 5A is a schematic cross-sectional view of the substrate support of Fig. 5A taken along a straight line.

Jgi A至6C所示的係根據本發明實施例的供膜裝置的 概略部份剖面圖。 圖 7 7所示的係根據本發明一實施例的一接觸框架的概 29 1337510 略立體圖。 圖8所示的係根據本發明一實施例的一雷射引發的熱 成像方法的流程圖。 圖9A至9F所示的係根據本發明一實施例的一雷射引 發的熱成像方法。 圖10 A至1 〇D所示的係根據本發明一實施例的一雷射 引發的熱成像方法。 圖1 1所示的係根據本發明—實施例的一雷射振盪器的 概略立體圖。 【主要元件符號說明】 100 雷射引發的熱成像設備 110 反應室 120 基板支撐座 121 中間裝置接收溝槽 123 供膜裝置接收溝槽 130 雷射源或振盪器 140 中間電子裝置 150 供膜裝置 161 導管 163 導管 P 真空唧筒 200 雷射引發的熱成像設備 210 反應室 220 雷射源或振盪器 30 1337510Jgi A to 6C are schematic sectional views showing a film supply apparatus according to an embodiment of the present invention. Figure 7 is a perspective view of a contact frame in accordance with an embodiment of the present invention. Figure 8 is a flow diagram of a laser induced thermal imaging method in accordance with an embodiment of the present invention. 9A to 9F are a laser-induced thermal imaging method according to an embodiment of the present invention. 10A to 1D show a laser-induced thermal imaging method according to an embodiment of the present invention. Fig. 11 is a schematic perspective view of a laser oscillator according to the present invention. [Main component symbol description] 100 Laser-induced thermal imaging device 110 Reaction chamber 120 Substrate support 121 Intermediate device receiving groove 123 Film supply device receiving groove 130 Laser source or oscillator 140 Intermediate electronic device 150 Film supply device 161 Catheter 163 Conduit P Vacuum Cylinder 200 Laser-induced thermal imaging device 210 Reaction chamber 220 Laser source or oscillator 30 1337510

221 電流計掃描器 222 電流計掃描Is 223 掃描透鏡 224 柱狀透鏡 230 接觸框架 231 輸送單元 232 接觸板 233 開口 234 (未定義) 240 供膜裝置托盤 241 供膜裝置 250 中間裝置 260 基板支撐座 261 穿透孔 262 穿透孔 263 凹窩 264 電磁鐵 265 基板升降器 266 供膜裝置升降器 400A 中間裝置 400B 中間裝置 400C 中間裝置 401 基板 401a 磁性層 31 1337510 . 401b 402 403 404 405 406 407 408 # 409 410 411 412 413 420 421 430221 galvanometer scanner 222 galvanometer scan Is 223 scan lens 224 cylindrical lens 230 contact frame 231 transport unit 232 contact plate 233 opening 234 (undefined) 240 film supply device tray 241 film supply device 250 intermediate device 260 substrate support 261 Penetration hole 262 Penetration hole 263 Dimple 264 Electromagnet 265 Substrate lifter 266 Film supply device lifter 400A Intermediate device 400B Intermediate device 400C Intermediate device 401 Substrate 401a Magnetic layer 31 1337510 . 401b 402 403 404 405 406 407 408 # 409 410 411 412 413 420 421 430

440440

441 450a 450b 460 470 600A 磁性層 緩衝層 絕緣層 絕緣層 半導體層 源極電極 汲極電極 閘極電極 鈍化層 電源連接器 薄膜電晶體結構 電極420的外露部份 磁性層 電極 電源連接器 像素分割護壁 資料驅動器 薄膜電晶體 掃描驅動器 磁性材料帶 磁性材料帶 顯不區 像素 供膜裝置 32 1337510441 450a 450b 460 470 600A magnetic layer buffer layer insulating layer insulating layer semiconductor layer source electrode drain electrode gate electrode passivation layer power connector thin film transistor structure electrode 420 exposed portion magnetic layer electrode power connector pixel segmentation wall data Driver thin film transistor scanning driver magnetic material with magnetic material with display area pixel supply device 32 1337510

. 600B. 600B

600C 601 602 603 604 604a 605 # 900 910 920 930 供膜裝置 供膜裝置 基底基板 光至熱轉換層 中間層 可轉印層 可轉印層604的一部份 磁性層 轉移室 末端效應器 機器人手臂 閘閥 33600C 601 602 603 604 604a 605 # 900 910 920 930 Film supply device Film supply device Base substrate Light to heat conversion layer Intermediate layer Transferable layer Transferable layer 604 Part of the magnetic layer Transfer chamber End effector Robot arm gate valve 33

Claims (1)

1337510 卿 十、申請專利範圍:-J 1. 一種雷射引發的熱成像(LITI)設備,其包括: 一基板支撐座,其係被配置成用以支撐一中間電子裝 置與一供膜裝置; 一雷射源;以及 一被設置在該基板支撐座與該雷射源之間的接觸框 架’該接觸框架可在一第一位置與一第二位置之間相對於 該基板支揮座來移動’其中,該第一位置和該基板支撐座 • 相隔一第一距離,該第二位置和該基板支撐座相隔一第二 距離’該第二距離大於該第一距離,該接觸框架被配置成 用於以該第一位置為基準來擠壓該供膜裝置使其抵頂該 • 中間電子裝置,該接觸框架包括選自由永久磁鐵與電磁鐵 • 所組成之群中的至少一磁性材料; 其中’該接觸框架包括一磁性部份與一非磁性部份, 該磁性部份包括該至少一磁性材料,且該磁性部份一般係 破排列成比該非磁性部份更靠近該基板支撐座。 2 ·如申π專利範圍第1項之設備,其中,該電磁鐵被 電連接至一外部電源,且被配置成可選擇性地受激。 3-如申請專利範圍第丨項之設備,其中,該至少一磁 性材料包括選自由下面所組成之群中的一或多種形式:平 板狀、片狀、晶片狀、棒狀、以及顆粒狀。 4.如申請專利範圍第1項之設備,其中,該基板支撐 座包括選自由下面所組成之群中的至少一磁性材料:永久 磁鐵、電磁鐵、以及可磁性吸引的材料。 34 13375101337510 Qing X. Patent Application: -J 1. A laser-induced thermal imaging (LITI) device comprising: a substrate support configured to support an intermediate electronic device and a film supply device; a laser source; and a contact frame disposed between the substrate support and the laser source. The contact frame is movable between a first position and a second position relative to the substrate support Wherein the first position and the substrate support are separated by a first distance, the second position being spaced apart from the substrate support by a second distance greater than the first distance, the contact frame being configured to And operative to press the film supply device against the intermediate electronic device based on the first position, the contact frame comprising at least one magnetic material selected from the group consisting of a permanent magnet and an electromagnet; The contact frame includes a magnetic portion and a non-magnetic portion, the magnetic portion including the at least one magnetic material, and the magnetic portion is generally arranged to be closer to the non-magnetic portion Substrate support. 2. The device of claim 1, wherein the electromagnet is electrically connected to an external power source and configured to be selectively excited. The apparatus of claim 3, wherein the at least one magnetic material comprises one or more forms selected from the group consisting of: a flat plate, a sheet, a wafer, a rod, and a pellet. 4. The apparatus of claim 1, wherein the substrate support comprises at least one magnetic material selected from the group consisting of: a permanent magnet, an electromagnet, and a magnetically attractable material. 34 1337510 5 ·如申請專利範圍第1項之設備,其令: 該中間電子裝置包括一接收表面,且係被放置在該基 板支撲座之上;以及 該供膜裝置包括一可轉印膜層,且係被放置在該中間 電子裝置之上。 6. 如申請專利範圍第5項之設備,其中,該中間電子 裝置與該供膜裝置被排列成讓該接收表面與該可轉印膜層 相互接觸。 7. 如申請專利範圍第6項之設備,其中,該接收表面 與該可轉印膜層之間實質上沒有任何氣泡。 8. 如申請專利範圍第5項之設備,其中,該供膜裝置 進一步包括一光至熱轉換層。 9. 如申明專利範圍第5項之設備,其中,該供膜裝置 並不〇括3有一永久磁鐵或一電磁鐵的磁性層。 .士申吻專利範圍第5項之設備,其中,該中間電子 裝置包括選自由下面所組成之群中的至少一磁性材料:永 久磁鐵、電磁鐵、以及可磁性吸引的材料。 11 ·種利用申請專利範圍第1項之設備來製造一電 子裝置的方法,其包括: 將中間電子裝置放置在該基板支樓座上,該中間電 子裝置包括一第-表面與-第二表面,該第-表面面向該 接觸框架,該第二表面則接觸該基板支樓座; 將供膜裝置放置在肖中間電子裝置的該第—表面 Ji 1¾供臈裝置包括—第三表面與一第四表面,該第三表 35 1337510 面面向該接觸框架, 移動δ亥接觸框架 俾使該供臈裝置的該 一表面;以及 而該第四表面則面向該基板支撐座: 以便接觸該供膜裝置的該第三表面, 第四表面接觸該中間電子裝置的該第 壓該供膜裝置,使其抵頂該中間電子裝置。 12. 如申請專利範圍第丨丨項之方盆 架包括-^f,口,且嗜方法 ’、,i接觸框 門口將… 經由該接觸框架的該5. The apparatus of claim 1, wherein: the intermediate electronic device includes a receiving surface and is placed over the substrate holder; and the film feeding device includes a transferable film layer. And is placed on top of the intermediate electronic device. 6. The apparatus of claim 5, wherein the intermediate electronic device and the film supply device are arranged such that the receiving surface and the transferable film layer are in contact with each other. 7. The apparatus of claim 6 wherein there is substantially no air bubble between the receiving surface and the transferable film layer. 8. The apparatus of claim 5, wherein the film supply device further comprises a light to heat conversion layer. 9. The apparatus of claim 5, wherein the film supply device does not include a magnetic layer having a permanent magnet or an electromagnet. The apparatus of claim 5, wherein the intermediate electronic device comprises at least one magnetic material selected from the group consisting of permanent magnets, electromagnets, and magnetically attractable materials. 11 . A method of manufacturing an electronic device using the apparatus of claim 1 , comprising: placing an intermediate electronic device on the substrate support, the intermediate electronic device including a first surface and a second surface The first surface faces the contact frame, the second surface contacts the substrate support; the film supply device is placed on the first surface of the sinister electronic device, and the supply device includes a third surface and a first surface a fourth surface, the surface of the third table 35 1337510 facing the contact frame, moving the 亥海 contact frame to the surface of the supply device; and the fourth surface facing the substrate support: to contact the film supply device The third surface, the fourth surface contacts the first film feeding device of the intermediate electronic device to abut the intermediate electronic device. 12. If the square frame of the scope of the patent application includes -^f, the mouth, and the method of ',, i contact frame doorway will... via the contact frame 開口將-雷射束照射在該供膜裝置上。 13. 如申請專利範圍第"項之方法…,該方法係 在真空環境_進行。 力如申請專利範圍第n項之方法其中,該接觸框 繼-電磁鐵,且引發該磁性作用力包括啟動該電磁鐵。 15.如申請專利範圍第η項之方法,其中,擠壓該供 膜裝置包括讓該接觸框架的重量施加在該供膜裝置上。The opening illuminates the laser beam on the film supply device. 13. If the method of patent application section " is applied, the method is carried out in a vacuum environment. The method of claim n, wherein the contact frame is an electromagnet, and initiating the magnetic force comprises activating the electromagnet. 15. The method of claim n, wherein squeezing the film supply device comprises applying a weight of the contact frame to the film supply device. 16.如申請專利範圍第η項 '、乃凃,其中,擠壓該供 膜裝置進-步包括讓該至少-磁性材料和位於該中間電子 裝置之該第-表面下方的-磁鐵或可磁性吸引的材料產生 磁性相互作用。 17.如申請專利範圍第16項之方法 «〜乃次,其中,該中間電 子裝置包括該磁鐵或可磁性吸引的材料。 .如中請專利第16項之方法,其中,該基板支 撐座包括該磁鐵或可磁性吸引的材料。 3616. The invention of claim n, wherein the step of extruding the film feeding device comprises: allowing the at least-magnetic material and a magnet located below the first surface of the intermediate electronic device to be magnetic The attracted material creates a magnetic interaction. 17. The method of claim 16, wherein the intermediate electronic device comprises the magnet or a magnetically attractable material. The method of claim 16, wherein the substrate support comprises the magnet or a magnetically attractable material. 36
TW95139700A 2005-11-16 2006-10-27 Laser induced thermal imaging apparatus with contact frame TWI337510B (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR1020050109815A KR100700837B1 (en) 2005-11-16 2005-11-16 Laser Induced Thermal Imaging Apparatus and Method using the same
KR1020050109814A KR100745336B1 (en) 2005-11-16 2005-11-16 Laser Induced Thermal Imaging Apparatus and Method using the same
KR1020050109816A KR100745337B1 (en) 2005-11-16 2005-11-16 Laser Induced Thermal Imaging Apparatus and Method using the same

Publications (2)

Publication Number Publication Date
TW200733801A TW200733801A (en) 2007-09-01
TWI337510B true TWI337510B (en) 2011-02-11

Family

ID=38204404

Family Applications (1)

Application Number Title Priority Date Filing Date
TW95139700A TWI337510B (en) 2005-11-16 2006-10-27 Laser induced thermal imaging apparatus with contact frame

Country Status (2)

Country Link
JP (1) JP4642684B2 (en)
TW (1) TWI337510B (en)

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05138959A (en) * 1991-11-15 1993-06-08 Konica Corp Thermal transfer recording apparatus
JPH08123000A (en) * 1994-10-24 1996-05-17 Konica Corp Thermal transfer device
JP2003187972A (en) * 2001-12-20 2003-07-04 Dainippon Printing Co Ltd Manufacturing method of organic el element and organic el transferring body and transferred body
US6695030B1 (en) * 2002-08-20 2004-02-24 Eastman Kodak Company Apparatus for permitting transfer of organic material from a donor web to form a layer in an OLED device
JP2005005245A (en) * 2002-11-08 2005-01-06 Fuji Photo Film Co Ltd Transfer method of transfer material, shape transfer method and transfer device
JP2005048250A (en) * 2003-07-30 2005-02-24 Dowa Mining Co Ltd Magnetic metal particle aggregate and method of producing the same
JP2005085799A (en) * 2003-09-04 2005-03-31 Seiko Epson Corp Film depositing method, method of forming circuit pattern, method of manufacturing semiconductor device, electrooptical device, and electronic apparatus

Also Published As

Publication number Publication date
JP2007141806A (en) 2007-06-07
JP4642684B2 (en) 2011-03-02
TW200733801A (en) 2007-09-01

Similar Documents

Publication Publication Date Title
US8613989B2 (en) Film donor device for laser induced thermal imaging
TWI335682B (en) Laser induced thermal imaging method and fabricating method of organic light-emitting diode using the same
JP6615286B2 (en) Vapor deposition mask, vapor deposition apparatus, vapor deposition method, and method of manufacturing organic EL display device
TWI324184B (en) Method of fabricating light-emitting device and apparatus for manufacturing light-emitting device
TWI297309B (en) Laser induced thermal imaging apparatus and laser induced thermal imaging method and fabricating method of organic light-emitting diode using the same
CN1967865A (en) Organic light emitting display device
TWI337510B (en) Laser induced thermal imaging apparatus with contact frame
CN100460214C (en) Membrane donator apparatus for laser induction heat imaging
KR100700828B1 (en) Laser thermal transfer imaging method and fabricating method of organic light emitting diode using the same
TWI328410B (en) Laser induced thermal imaging apparatus and laser induced thermal imaging method
CN100548708C (en) It makes method of organic light emitting diodes laser induced thermal imaging apparatus and use
CN100542827C (en) Laser induced thermal imaging apparatus and use it to make the method for electronic installation
CN100577440C (en) Laser induced thermal imaging apparatus with plate copying device
TW201734234A (en) Method and apparatus for manufacturing vapor deposition mask
JP2007062354A (en) Laser thermal transfer donor film, laser thermal transfer apparatus, laser thermal transfer method, and manufacturing apparatus for organic light-emitting element
CN100540326C (en) The manufacture method of organic light emitting display
JP4615473B2 (en) Laser thermal transfer apparatus and laser thermal transfer method using the same
KR100700827B1 (en) Laser induced thermal imaging appratus and preparing method of organic light emitting device using the same
KR20070024820A (en) Laser induced thermal imaging apparatus and preparing method of organic light emitting device using the same
US10912180B2 (en) X-ray source apparatus and control method thereof
TWI321123B (en) A method for implanting carbon nanotube
JP4637776B2 (en) Laser thermal transfer method and organic electroluminescent device manufacturing method using donor film
CN114335332A (en) Method and device for generating and erasing magnetic skynerger by utilizing photoinduced strain induction
CN103236496A (en) Laminated three-terminal active device
KR100719681B1 (en) Laser induced thermal imaging apparatus and preparing method of organic light emitting device using the same