TWI331785B - - Google Patents

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Publication number
TWI331785B
TWI331785B TW096109151A TW96109151A TWI331785B TW I331785 B TWI331785 B TW I331785B TW 096109151 A TW096109151 A TW 096109151A TW 96109151 A TW96109151 A TW 96109151A TW I331785 B TWI331785 B TW I331785B
Authority
TW
Taiwan
Prior art keywords
wafer
bonding layer
layer
substrate
measuring device
Prior art date
Application number
TW096109151A
Other languages
English (en)
Chinese (zh)
Other versions
TW200741934A (en
Inventor
Kenji Matsuda
Tomohide Minami
Yoshiki Yamanishi
Muneo Harada
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW200741934A publication Critical patent/TW200741934A/zh
Application granted granted Critical
Publication of TWI331785B publication Critical patent/TWI331785B/zh

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K1/00—Details of thermometers not specially adapted for particular types of thermometer
    • G01K1/16—Special arrangements for conducting heat from the object to the sensitive element
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/01—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using semiconducting elements having PN junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Measuring Temperature Or Quantity Of Heat (AREA)
TW096109151A 2006-03-16 2007-03-16 Wafer-shaped measuring apparatus and method for manufacturing the same TW200741934A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006073052 2006-03-16

Publications (2)

Publication Number Publication Date
TW200741934A TW200741934A (en) 2007-11-01
TWI331785B true TWI331785B (https=) 2010-10-11

Family

ID=38609155

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096109151A TW200741934A (en) 2006-03-16 2007-03-16 Wafer-shaped measuring apparatus and method for manufacturing the same

Country Status (4)

Country Link
US (1) US20090085031A1 (https=)
JP (1) JP4896963B2 (https=)
TW (1) TW200741934A (https=)
WO (1) WO2007119359A1 (https=)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007122560A2 (en) * 2006-04-20 2007-11-01 Nxp B.V. Semiconductor substrate temperature determination
WO2008103700A2 (en) * 2007-02-23 2008-08-28 Kla-Tencor Corporation Process condition measuring device
JP5476114B2 (ja) * 2009-12-18 2014-04-23 東京エレクトロン株式会社 温度測定用装置
JP5314664B2 (ja) 2010-12-24 2013-10-16 東京エレクトロン株式会社 物理量計測装置及び物理量計測方法
RU2615795C2 (ru) * 2011-12-23 2017-04-11 Санофи-Авентис Дойчланд Гмбх Сенсорное устройство для упаковки медикамента
KR20150130367A (ko) * 2013-03-07 2015-11-23 스미또모 베이크라이트 가부시키가이샤 장치, 접착제용 조성물, 접착 시트
CN103258772B (zh) * 2013-05-02 2016-02-10 苏州日月新半导体有限公司 打线工艺的加热座及加热装置
JP6094392B2 (ja) * 2013-06-11 2017-03-15 株式会社デンソー 半導体装置
NL2016982A (en) 2015-07-16 2017-01-19 Asml Netherlands Bv An Inspection Substrate and an Inspection Method
WO2019174968A1 (de) * 2018-03-15 2019-09-19 Heraeus Nexensos Gmbh Temperatursensorelement
KR102119757B1 (ko) * 2018-08-22 2020-06-08 한국표준과학연구원 다층 저항-열전식 온도측정 웨이퍼 센서 및 그 제조 방법

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1018844B (zh) * 1990-06-02 1992-10-28 中国科学院兰州化学物理研究所 防锈干膜润滑剂
US5141334A (en) * 1991-09-24 1992-08-25 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Sub-kelvin resistance thermometer
JP2839418B2 (ja) * 1992-10-29 1998-12-16 京セラ株式会社 温度センサ
JPH09166501A (ja) * 1995-12-13 1997-06-24 Oki Electric Ind Co Ltd 温度測定装置及び温度測定方法
JPH109963A (ja) * 1996-06-19 1998-01-16 Yamari Sangyo Kk 測温抵抗体素子によるシリコンウェハー等の温度計測構造
US6744346B1 (en) * 1998-02-27 2004-06-01 Micron Technology, Inc. Electronic device workpieces, methods of semiconductor processing and methods of sensing temperature of an electronic device workpiece
JP2001289715A (ja) * 2000-04-05 2001-10-19 Yamari Sangyo Kk 測温基板
JP2002202204A (ja) * 2000-12-28 2002-07-19 Sensarray Japan Corp 温度計測用球状半導体デバイス
JP4486289B2 (ja) * 2001-03-30 2010-06-23 株式会社デンソー フローセンサ及びその製造方法
US6919730B2 (en) * 2002-03-18 2005-07-19 Honeywell International, Inc. Carbon nanotube sensor
US6870270B2 (en) * 2002-12-28 2005-03-22 Intel Corporation Method and structure for interfacing electronic devices
JP2005340291A (ja) * 2004-05-24 2005-12-08 Komatsu Ltd 基板熱状態測定装置及び基板熱状態分析制御方法

Also Published As

Publication number Publication date
US20090085031A1 (en) 2009-04-02
JPWO2007119359A1 (ja) 2009-08-27
WO2007119359A1 (ja) 2007-10-25
JP4896963B2 (ja) 2012-03-14
TW200741934A (en) 2007-11-01

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees