TWI327644B - Method and apparatus for controlling a fabrication process based on a measured electrical characteristic - Google Patents

Method and apparatus for controlling a fabrication process based on a measured electrical characteristic Download PDF

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Publication number
TWI327644B
TWI327644B TW092126782A TW92126782A TWI327644B TW I327644 B TWI327644 B TW I327644B TW 092126782 A TW092126782 A TW 092126782A TW 92126782 A TW92126782 A TW 92126782A TW I327644 B TWI327644 B TW I327644B
Authority
TW
Taiwan
Prior art keywords
parameter
controller
electrical
tool
polishing
Prior art date
Application number
TW092126782A
Other languages
English (en)
Chinese (zh)
Other versions
TW200408807A (en
Inventor
Robert J Chong
Jin Wang
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Publication of TW200408807A publication Critical patent/TW200408807A/zh
Application granted granted Critical
Publication of TWI327644B publication Critical patent/TWI327644B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects

Landscapes

  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • General Factory Administration (AREA)
TW092126782A 2002-09-30 2003-09-29 Method and apparatus for controlling a fabrication process based on a measured electrical characteristic TWI327644B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/262,620 US6912437B2 (en) 2002-09-30 2002-09-30 Method and apparatus for controlling a fabrication process based on a measured electrical characteristic

Publications (2)

Publication Number Publication Date
TW200408807A TW200408807A (en) 2004-06-01
TWI327644B true TWI327644B (en) 2010-07-21

Family

ID=32068258

Family Applications (1)

Application Number Title Priority Date Filing Date
TW092126782A TWI327644B (en) 2002-09-30 2003-09-29 Method and apparatus for controlling a fabrication process based on a measured electrical characteristic

Country Status (9)

Country Link
US (1) US6912437B2 (https=)
JP (1) JP5214091B2 (https=)
KR (1) KR101165791B1 (https=)
CN (1) CN100345270C (https=)
AU (1) AU2003270675A1 (https=)
DE (1) DE10393371T5 (https=)
GB (1) GB2410377B (https=)
TW (1) TWI327644B (https=)
WO (1) WO2004032224A1 (https=)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102004009516B4 (de) * 2004-02-27 2010-04-22 Advanced Micro Devices, Inc., Sunnyvale Verfahren und System zum Steuern eines Produktparameters eines Schaltungselements
US7117059B1 (en) * 2005-04-18 2006-10-03 Promos Technologies Inc. Run-to-run control system and operating method of the same
KR100735012B1 (ko) * 2006-01-23 2007-07-03 삼성전자주식회사 제품 파라미터들의 통계적 분포 특성을 평가하는 방법
DE102007035833B3 (de) * 2007-07-31 2009-03-12 Advanced Micro Devices, Inc., Sunnyvale Fortgeschrittene automatische Abscheideprofilzielsteuerung und Kontrolle durch Anwendung von fortgeschrittener Polierendpunktsystemrückkopplung
US8338192B2 (en) * 2008-05-13 2012-12-25 Stmicroelectronics, Inc. High precision semiconductor chip and a method to construct the semiconductor chip
US8606379B2 (en) * 2008-09-29 2013-12-10 Fisher-Rosemount Systems, Inc. Method of generating a product recipe for execution in batch processing
US8224475B2 (en) * 2009-03-13 2012-07-17 Taiwan Semiconductor Manufacturing Company, Ltd. Method and apparatus for advanced process control
US8112168B2 (en) * 2009-07-29 2012-02-07 Texas Instruments Incorporated Process and method for a decoupled multi-parameter run-to-run controller
US20110195636A1 (en) * 2010-02-11 2011-08-11 United Microelectronics Corporation Method for Controlling Polishing Wafer
KR101121858B1 (ko) * 2010-04-27 2012-03-21 주식회사 하이닉스반도체 반도체 소자의 제조 방법
US8832634B2 (en) * 2012-09-05 2014-09-09 Lsi Corporation Integrated circuit characterization based on measured and static apparent resistances
JP2014053505A (ja) * 2012-09-07 2014-03-20 Toshiba Corp 半導体装置の製造方法、半導体ウェーハ及び半導体装置の製造装置
US9405289B2 (en) 2012-12-06 2016-08-02 Tokyo Electron Limited Method and apparatus for autonomous identification of particle contamination due to isolated process events and systematic trends
US9879968B2 (en) * 2014-10-23 2018-01-30 Caterpillar Inc. Component measurement system having wavelength filtering
TWI553436B (zh) * 2015-06-10 2016-10-11 A control system that monitors and obtains production information through a remote mobile device
KR20170136225A (ko) 2016-06-01 2017-12-11 엘에스산전 주식회사 시뮬레이션 장치
US11346882B2 (en) * 2017-11-03 2022-05-31 Tokyo Electron Limited Enhancement of yield of functional microelectronic devices
US11244873B2 (en) * 2018-10-31 2022-02-08 Tokyo Electron Limited Systems and methods for manufacturing microelectronic devices
CN113053767B (zh) * 2021-03-09 2022-09-06 普迪飞半导体技术(上海)有限公司 栅极结构中氮化钛层厚度的确定方法、装置、设备与介质
US11868119B2 (en) 2021-09-24 2024-01-09 Tokyo Electron Limited Method and process using fingerprint based semiconductor manufacturing process fault detection
KR102760991B1 (ko) * 2022-02-25 2025-01-24 포항공과대학교 산학협력단 반도체 파라미터 설정 장치 및 방법

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EP0706209A3 (en) * 1994-10-06 1996-12-27 Applied Materials Inc Surface resistance measurement
US5935877A (en) * 1995-09-01 1999-08-10 Applied Materials, Inc. Etch process for forming contacts over titanium silicide
JP3727103B2 (ja) * 1996-04-05 2005-12-14 三菱電機株式会社 半導体素子の試験方法
JPH10173021A (ja) * 1996-12-12 1998-06-26 Mitsubishi Electric Corp 製造ライン解析方法及び製造ライン解析装置
US6041270A (en) * 1997-12-05 2000-03-21 Advanced Micro Devices, Inc. Automatic recipe adjust and download based on process control window
US5969273A (en) 1998-02-12 1999-10-19 International Business Machines Corporation Method and apparatus for critical dimension and tool resolution determination using edge width
JP4006081B2 (ja) * 1998-03-19 2007-11-14 株式会社ルネサステクノロジ 半導体装置の製造方法
JP3230483B2 (ja) * 1998-03-27 2001-11-19 日本電気株式会社 半導体装置におけるゲート絶縁膜の寿命試験方法
US5998226A (en) 1998-04-02 1999-12-07 Lsi Logic Corporation Method and system for alignment of openings in semiconductor fabrication
JP2000012638A (ja) * 1998-06-22 2000-01-14 Hitachi Ltd 半導体集積回路装置の製造方法
JP3897922B2 (ja) 1998-12-15 2007-03-28 株式会社東芝 半導体装置の製造方法、及びコンピュ−タ読取り可能な記録媒体
US6298470B1 (en) * 1999-04-15 2001-10-02 Micron Technology, Inc. Method for efficient manufacturing of integrated circuits
AU5881700A (en) * 1999-06-22 2001-01-09 Brooks Automation, Inc. Run-to-run controller for use in microelectronic fabrication
US6284622B1 (en) * 1999-10-25 2001-09-04 Advanced Micro Devices, Inc. Method for filling trenches
JP3910324B2 (ja) * 1999-10-26 2007-04-25 ファブソリューション株式会社 半導体製造装置
JP2002203881A (ja) * 2000-12-28 2002-07-19 Shin Etsu Handotai Co Ltd 半導体ウエーハ上のｍｏｓ型半導体装置の酸化膜信頼性特性評価方法
US7201936B2 (en) * 2001-06-19 2007-04-10 Applied Materials, Inc. Method of feedback control of sub-atmospheric chemical vapor deposition processes

Also Published As

Publication number Publication date
CN1685495A (zh) 2005-10-19
AU2003270675A1 (en) 2004-04-23
TW200408807A (en) 2004-06-01
US6912437B2 (en) 2005-06-28
WO2004032224A1 (en) 2004-04-15
KR101165791B1 (ko) 2012-07-17
JP5214091B2 (ja) 2013-06-19
GB2410377B (en) 2006-08-16
GB0505102D0 (en) 2005-04-20
KR20050055729A (ko) 2005-06-13
JP2006501674A (ja) 2006-01-12
GB2410377A (en) 2005-07-27
DE10393371T5 (de) 2005-10-20
CN100345270C (zh) 2007-10-24
US20040093110A1 (en) 2004-05-13

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