TWI321159B - Solder alloy for producing sputtering target and sputtering target using the same - Google Patents
Solder alloy for producing sputtering target and sputtering target using the same Download PDFInfo
- Publication number
- TWI321159B TWI321159B TW095121366A TW95121366A TWI321159B TW I321159 B TWI321159 B TW I321159B TW 095121366 A TW095121366 A TW 095121366A TW 95121366 A TW95121366 A TW 95121366A TW I321159 B TWI321159 B TW I321159B
- Authority
- TW
- Taiwan
- Prior art keywords
- alloy
- solder alloy
- target
- bonding
- solder
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C13/00—Alloys based on tin
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
- B23K35/262—Sn as the principal constituent
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005175628 | 2005-06-15 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200643193A TW200643193A (en) | 2006-12-16 |
TWI321159B true TWI321159B (en) | 2010-03-01 |
Family
ID=37518842
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW095121366A TWI321159B (en) | 2005-06-15 | 2006-06-15 | Solder alloy for producing sputtering target and sputtering target using the same |
Country Status (3)
Country | Link |
---|---|
KR (1) | KR100785208B1 (ko) |
CN (1) | CN100590213C (ko) |
TW (1) | TWI321159B (ko) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102409300B (zh) * | 2011-09-07 | 2013-08-14 | 三峡大学 | 氧化物陶瓷溅射靶及其制备方法和所用的钎焊合金 |
CN103785911B (zh) * | 2012-10-30 | 2016-03-09 | 宁波江丰电子材料股份有限公司 | 靶材组件的焊接方法 |
JP5773335B2 (ja) * | 2013-12-09 | 2015-09-02 | 三菱マテリアル株式会社 | In又はIn合金スパッタリングターゲット及びその製造方法 |
TWI612025B (zh) * | 2015-09-23 | 2018-01-21 | 住華科技股份有限公司 | 製作濺鍍靶材的銲料及其應用方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE69524912T2 (de) * | 1994-09-30 | 2002-08-22 | AT & T CORP., NEW YORK | Bleifreie Legierungen zum Weichlöten |
JP3319740B2 (ja) * | 2000-06-02 | 2002-09-03 | 株式会社日鉱マテリアルズ | ロウ材塗布装置 |
-
2006
- 2006-05-30 KR KR1020060048584A patent/KR100785208B1/ko active IP Right Grant
- 2006-05-31 CN CN200610083291A patent/CN100590213C/zh not_active Expired - Fee Related
- 2006-06-15 TW TW095121366A patent/TWI321159B/zh active
Also Published As
Publication number | Publication date |
---|---|
CN1880492A (zh) | 2006-12-20 |
KR100785208B1 (ko) | 2007-12-11 |
CN100590213C (zh) | 2010-02-17 |
KR20060131625A (ko) | 2006-12-20 |
TW200643193A (en) | 2006-12-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US20100143707A1 (en) | Surface-treated metal substrate and manufacturing method of the same | |
US20080063889A1 (en) | Reactive Multilayer Joining WIth Improved Metallization Techniques | |
US20090186195A1 (en) | Reactive Multilayer Joining With Improved Metallization Techniques | |
TWI391205B (zh) | 濺鍍靶組件及其製法 | |
US20080236738A1 (en) | Bonded sputtering target and methods of manufacture | |
KR101256231B1 (ko) | Me-DLC 경질 코팅이 포함된 구리 함유성 전도재 | |
US20130186524A1 (en) | Al PLATING LAYER/Al-Mg PLATING LAYER MULTI-LAYERED STRUCTURE ALLOY PLATED STEEL SHEET HAVING EXCELLENT PLATING ADHESIVENESS AND CORROSION RESISTANCE, AND METHOD OF MANUFACTURING THE SAME | |
TWI564413B (zh) | 支承板、靶材總成及濺鍍用靶材 | |
KR100875125B1 (ko) | 스퍼터링 타겟 제조용 땜납합금 및 이를 이용한 스퍼터링타겟 | |
TWI321159B (en) | Solder alloy for producing sputtering target and sputtering target using the same | |
CN111203606A (zh) | 一种金属靶材真空磁控溅射镀镍及焊接方法 | |
KR100771434B1 (ko) | 스퍼터링 타겟의 제조방법 및 스퍼터링 타겟 | |
JP5245772B2 (ja) | 表面処理金属材およびその製造方法 | |
JP4970034B2 (ja) | ターゲット/バッキングプレート構造物、及びターゲット/バッキングプレート構造物の形成法 | |
JP2007021580A (ja) | スパッタリングターゲット製造用はんだ合金およびこれを用いたスパッタリングターゲット | |
US20100028713A1 (en) | Method and article for improved adhesion of fatigue-prone components | |
US20100288631A1 (en) | Ceramic sputtering target assembly and a method for producing the same | |
TWI606133B (zh) | 濺射靶 | |
US6723213B2 (en) | Titanium target assembly for sputtering and method for preparing the same | |
JP6099673B2 (ja) | 温度ヒューズ用電極材料の製造方法 | |
JP4777119B2 (ja) | アルミニウム製熱交換器の製造方法 | |
JPH05345969A (ja) | 半田付け性及びめっき密着性に優れたAl系合金金属材 | |
JPH0683905B2 (ja) | 抵抗溶接用電極材料 | |
JPS60227998A (ja) | 溶接用電極材料 | |
JP6021284B2 (ja) | 温度ヒューズ用電極材料およびその製造方法 |