TWI320434B - - Google Patents

Info

Publication number
TWI320434B
TWI320434B TW094134050A TW94134050A TWI320434B TW I320434 B TWI320434 B TW I320434B TW 094134050 A TW094134050 A TW 094134050A TW 94134050 A TW94134050 A TW 94134050A TW I320434 B TWI320434 B TW I320434B
Authority
TW
Taiwan
Application number
TW094134050A
Other versions
TW200636098A (en
Inventor
Toshiakii Ono
Wataru Sugimura
Masataka Hourai
Original Assignee
Sumco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumco Corp filed Critical Sumco Corp
Publication of TW200636098A publication Critical patent/TW200636098A/zh
Application granted granted Critical
Publication of TWI320434B publication Critical patent/TWI320434B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/203—Controlling or regulating the relationship of pull rate (v) to axial thermal gradient (G)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
    • H01L21/3225—Thermally inducing defects using oxygen present in the silicon body for intrinsic gettering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
TW094134050A 2005-04-08 2005-09-29 Method for growing silicon single crystal, and silicon wafer and SOI substrate using the same TW200636098A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005112649 2005-04-08
JP2005203865A JP4742711B2 (ja) 2005-04-08 2005-07-13 シリコン単結晶育成方法

Publications (2)

Publication Number Publication Date
TW200636098A TW200636098A (en) 2006-10-16
TWI320434B true TWI320434B (zh) 2010-02-11

Family

ID=37114801

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094134050A TW200636098A (en) 2005-04-08 2005-09-29 Method for growing silicon single crystal, and silicon wafer and SOI substrate using the same

Country Status (7)

Country Link
US (1) US20090293799A1 (zh)
EP (2) EP1892323B1 (zh)
JP (1) JP4742711B2 (zh)
KR (1) KR100916055B1 (zh)
CN (1) CN101155950B (zh)
TW (1) TW200636098A (zh)
WO (1) WO2006112053A1 (zh)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4806974B2 (ja) 2005-06-20 2011-11-02 株式会社Ｓｕｍｃｏ シリコン単結晶育成方法
US7819972B2 (en) 2005-06-20 2010-10-26 Sumco Corporation Method for growing silicon single crystal and method for manufacturing silicon wafer
JP4806975B2 (ja) * 2005-06-20 2011-11-02 株式会社Ｓｕｍｃｏ シリコン単結晶の育成方法
JP5262021B2 (ja) * 2007-08-22 2013-08-14 株式会社Ｓｕｍｃｏ シリコンウェーハ及びその製造方法
US20080292523A1 (en) 2007-05-23 2008-11-27 Sumco Corporation Silicon single crystal wafer and the production method
WO2009025340A1 (ja) * 2007-08-21 2009-02-26 Sumco Corporation Ｉｇｂｔ用のシリコン単結晶ウェーハ及びｉｇｂｔ用のシリコン単結晶ウェーハの製造方法
JP5246163B2 (ja) * 2007-08-21 2013-07-24 株式会社Ｓｕｍｃｏ Ｉｇｂｔ用のシリコン単結晶ウェーハ及びｉｇｂｔ用のシリコン単結晶ウェーハの製造方法
WO2009025339A1 (ja) * 2007-08-21 2009-02-26 Sumco Corporation Ｉｇｂｔ用のシリコン単結晶ウェーハ及びｉｇｂｔ用のシリコン単結晶ウェーハの製造方法
JPWO2009025341A1 (ja) * 2007-08-21 2010-11-25 株式会社Sumco Ｉｇｂｔ用のシリコン単結晶ウェーハ及びｉｇｂｔ用のシリコン単結晶ウェーハの製造方法
JP5304649B2 (ja) * 2007-08-21 2013-10-02 株式会社Sumco Ｉｇｂｔ用のシリコン単結晶ウェーハの製造方法
FR2937797B1 (fr) * 2008-10-28 2010-12-24 S O I Tec Silicon On Insulator Tech Procede de fabrication et de traitement d'une structure de type semi-conducteur sur isolant, permettant de deplacer des dislocations, et structure correspondante
WO2010123732A1 (en) * 2009-04-21 2010-10-28 Perk Dynamics, Inc. Method and system for remote orders
JP5428608B2 (ja) * 2009-07-15 2014-02-26 株式会社Ｓｕｍｃｏ シリコン単結晶の育成方法
JP6260100B2 (ja) * 2013-04-03 2018-01-17 株式会社Sumco エピタキシャルシリコンウェーハの製造方法
CN112986294A (zh) * 2021-02-02 2021-06-18 西安奕斯伟硅片技术有限公司 一种晶圆缺陷检测方法及装置

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3085146B2 (ja) 1995-05-31 2000-09-04 住友金属工業株式会社 シリコン単結晶ウェーハおよびその製造方法
JP4147599B2 (ja) * 1997-12-26 2008-09-10 株式会社Ｓｕｍｃｏ シリコン単結晶及びその製造方法
JP3955375B2 (ja) * 1998-01-19 2007-08-08 信越半導体株式会社 シリコン単結晶の製造方法およびシリコン単結晶ウエーハ
US6284384B1 (en) * 1998-12-09 2001-09-04 Memc Electronic Materials, Inc. Epitaxial silicon wafer with intrinsic gettering
JP4460671B2 (ja) * 1999-03-26 2010-05-12 シルトロニック・ジャパン株式会社 シリコン半導体基板及びその製造方法
JP3573045B2 (ja) * 2000-02-08 2004-10-06 三菱住友シリコン株式会社 高品質シリコン単結晶の製造方法
DE10014650A1 (de) 2000-03-24 2001-10-04 Wacker Siltronic Halbleitermat Halbleiterscheibe aus Silicium und Verfahren zur Herstellung der Halbleiterscheibe
JP3901092B2 (ja) * 2000-06-30 2007-04-04 信越半導体株式会社 シリコン単結晶の製造方法
US6663708B1 (en) * 2000-09-22 2003-12-16 Mitsubishi Materials Silicon Corporation Silicon wafer, and manufacturing method and heat treatment method of the same
US6682597B2 (en) * 2000-10-23 2004-01-27 Mitsubishi Materials Silicon Corporation Silicon wafer, and heat treatment method of the same and the heat-treated silicon wafer
JP2002134517A (ja) * 2000-10-27 2002-05-10 Mitsubishi Materials Silicon Corp シリコンウェーハの熱処理方法
JP3624827B2 (ja) * 2000-12-20 2005-03-02 三菱住友シリコン株式会社 シリコン単結晶の製造方法
JPWO2004083496A1 (ja) * 2003-02-25 2006-06-22 株式会社Sumco シリコンウェーハ及びその製造方法、並びにシリコン単結晶育成方法
JP5023451B2 (ja) * 2004-08-25 2012-09-12 株式会社Ｓｕｍｃｏ シリコンウェーハの製造方法、シリコン単結晶育成方法
US7435294B2 (en) * 2005-04-08 2008-10-14 Sumco Corporation Method for manufacturing silicon single crystal, and silicon wafer

Also Published As

Publication number Publication date
JP2006312575A (ja) 2006-11-16
CN101155950B (zh) 2012-07-04
EP1892323A4 (en) 2009-07-01
US20090293799A1 (en) 2009-12-03
EP1892323B1 (en) 2016-05-11
EP1892323A1 (en) 2008-02-27
CN101155950A (zh) 2008-04-02
WO2006112053A1 (ja) 2006-10-26
KR20070113279A (ko) 2007-11-28
EP2194168B1 (en) 2016-05-11
KR100916055B1 (ko) 2009-09-08
JP4742711B2 (ja) 2011-08-10
TW200636098A (en) 2006-10-16
EP2194168A1 (en) 2010-06-09

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