TWI316304B - Transistor element, display device and these manufacturing methods - Google Patents

Transistor element, display device and these manufacturing methods

Info

Publication number
TWI316304B
TWI316304B TW095136584A TW95136584A TWI316304B TW I316304 B TWI316304 B TW I316304B TW 095136584 A TW095136584 A TW 095136584A TW 95136584 A TW95136584 A TW 95136584A TW I316304 B TWI316304 B TW I316304B
Authority
TW
Taiwan
Prior art keywords
display device
manufacturing methods
transistor element
transistor
manufacturing
Prior art date
Application number
TW095136584A
Other languages
English (en)
Other versions
TW200746487A (en
Inventor
Mayuka Araumi
Ikue Kawashima
Akishige Murakami
Takumi Yamaga
Original Assignee
Ricoh Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ricoh Co Ltd filed Critical Ricoh Co Ltd
Publication of TW200746487A publication Critical patent/TW200746487A/zh
Application granted granted Critical
Publication of TWI316304B publication Critical patent/TWI316304B/zh

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/478—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising a layer of composite material comprising interpenetrating or embedded materials, e.g. TiO2 particles in a polymer matrix
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/10—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00 comprising field-effect transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Nonlinear Science (AREA)
  • Composite Materials (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)
TW095136584A 2005-10-03 2006-10-02 Transistor element, display device and these manufacturing methods TWI316304B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005290129A JP2007103584A (ja) 2005-10-03 2005-10-03 トランジスタ素子、表示装置およびこれらの製造方法

Publications (2)

Publication Number Publication Date
TW200746487A TW200746487A (en) 2007-12-16
TWI316304B true TWI316304B (en) 2009-10-21

Family

ID=37942663

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095136584A TWI316304B (en) 2005-10-03 2006-10-02 Transistor element, display device and these manufacturing methods

Country Status (7)

Country Link
US (1) US20090189148A1 (zh)
EP (1) EP1932183B1 (zh)
JP (1) JP2007103584A (zh)
KR (1) KR100996933B1 (zh)
CN (1) CN101278404B (zh)
TW (1) TWI316304B (zh)
WO (1) WO2007043419A1 (zh)

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WO2009004793A1 (ja) * 2007-07-03 2009-01-08 Panasonic Corporation 半導体装置とその製造方法および画像表示装置
JP5277675B2 (ja) * 2007-07-11 2013-08-28 株式会社リコー 有機薄膜トランジスタの製造方法
US20090014716A1 (en) * 2007-07-11 2009-01-15 Takumi Yamaga Organic thin-film transistor and method of manufacturing the same
JP5380831B2 (ja) * 2007-12-07 2014-01-08 株式会社リコー 有機トランジスタ及びその製造方法
JP5368013B2 (ja) * 2008-06-24 2013-12-18 共同印刷株式会社 フレキシブル有機ｅｌディスプレイの製造方法
JP5368014B2 (ja) * 2008-06-24 2013-12-18 共同印刷株式会社 フレキシブル有機ｅｌディスプレイの製造方法
JP5376287B2 (ja) 2008-08-06 2013-12-25 セイコーエプソン株式会社 回路基板、電気光学装置、電子機器
CN101760035B (zh) 2008-12-24 2016-06-08 清华大学 热界面材料及该热界面材料的使用方法
TWI394825B (zh) * 2009-01-16 2013-05-01 Hon Hai Prec Ind Co Ltd 熱介面材料及該熱介面材料之使用方法
KR101127574B1 (ko) * 2009-04-06 2012-03-23 삼성모바일디스플레이주식회사 액티브 매트릭스 기판의 제조방법 및 유기 발광 표시장치의 제조방법
KR101058105B1 (ko) * 2009-04-06 2011-08-24 삼성모바일디스플레이주식회사 액티브 매트릭스 기판의 제조방법 및 유기 발광 표시장치의 제조방법
JP5446982B2 (ja) * 2009-05-01 2014-03-19 株式会社リコー 画像表示パネル及び画像表示装置
WO2011042430A1 (en) 2009-10-05 2011-04-14 Acreo Ab Electrochemical device
KR20120010513A (ko) * 2010-07-26 2012-02-03 삼성전자주식회사 바이오 물질 수용소자와 그 제조 및 동작방법
US9709867B2 (en) 2010-10-05 2017-07-18 Rise Acreo Ab Display device
JP2012115761A (ja) * 2010-11-30 2012-06-21 Seiko Epson Corp 印刷方法及び印刷装置
JP6035458B2 (ja) 2011-04-05 2016-12-07 リンテック株式会社 電極上での自己整列電解質に基づく電気化学デバイスの製造方法
US20140183457A1 (en) * 2013-01-03 2014-07-03 Lisa H. Stecker Transistor with Organic Semiconductor Interface
EP2903046A1 (en) 2014-01-30 2015-08-05 National Research Council Of Canada CNT thin film transistor with high K polymeric dielectric
CN104576758A (zh) * 2015-01-22 2015-04-29 合肥京东方光电科技有限公司 薄膜晶体管、阵列基板及其制作方法
CN104752343B (zh) * 2015-04-14 2017-07-28 深圳市华星光电技术有限公司 双栅极氧化物半导体tft基板的制作方法及其结构
JP2017028165A (ja) * 2015-07-24 2017-02-02 ソニー株式会社 表示装置および撮像装置
CN110854302B (zh) * 2019-10-31 2021-02-26 深圳市华星光电半导体显示技术有限公司 Oled显示面板及其制备方法、oled显示装置

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US6740900B2 (en) * 2002-02-27 2004-05-25 Konica Corporation Organic thin-film transistor and manufacturing method for the same
JP2004014982A (ja) * 2002-06-11 2004-01-15 Konica Minolta Holdings Inc 半導体回路および画像表示装置
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CN1282259C (zh) * 2003-03-03 2006-10-25 中国科学院长春应用化学研究所 含有保护层的有机半导体场效应晶体管及制作方法
JP2005037851A (ja) * 2003-06-24 2005-02-10 Seiko Epson Corp 電気泳動分散液、電気泳動表示装置、電気泳動表示装置の製造方法および電子機器
KR100542993B1 (ko) * 2003-07-26 2006-01-20 삼성에스디아이 주식회사 고효율 평판표시장치 및 그의 제조방법
JP4254419B2 (ja) * 2003-08-20 2009-04-15 ブラザー工業株式会社 通信システムの質問器
DE10340641A1 (de) * 2003-09-03 2005-04-07 Siemens Ag Strukturierung von Gate-Dielektrika in organischen Feldeffekt-Transistoren
JP4444694B2 (ja) * 2004-03-03 2010-03-31 株式会社リコー 液晶表示素子
JP2007019014A (ja) * 2005-07-06 2007-01-25 Samsung Sdi Co Ltd 平板表示装置及びその製造方法
KR100754395B1 (ko) * 2006-02-10 2007-08-31 삼성전자주식회사 유기 전자발광 디스플레이 및 그 제조방법

Also Published As

Publication number Publication date
EP1932183A1 (en) 2008-06-18
US20090189148A1 (en) 2009-07-30
CN101278404B (zh) 2013-01-23
KR100996933B1 (ko) 2010-11-29
EP1932183B1 (en) 2014-07-16
JP2007103584A (ja) 2007-04-19
EP1932183A4 (en) 2010-06-16
KR20080053347A (ko) 2008-06-12
WO2007043419A1 (en) 2007-04-19
TW200746487A (en) 2007-12-16
CN101278404A (zh) 2008-10-01
WO2007043419A9 (en) 2007-06-07

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