TWI315449B - Positive resist composition, method for forming resist pattern and compound - Google Patents

Positive resist composition, method for forming resist pattern and compound

Info

Publication number
TWI315449B
TWI315449B TW095104437A TW95104437A TWI315449B TW I315449 B TWI315449 B TW I315449B TW 095104437 A TW095104437 A TW 095104437A TW 95104437 A TW95104437 A TW 95104437A TW I315449 B TWI315449 B TW I315449B
Authority
TW
Taiwan
Prior art keywords
compound
forming
resist pattern
resist composition
positive resist
Prior art date
Application number
TW095104437A
Other languages
English (en)
Other versions
TW200641522A (en
Inventor
Daiju Shiono
Taku Hirayama
Hideo Hada
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Publication of TW200641522A publication Critical patent/TW200641522A/zh
Application granted granted Critical
Publication of TWI315449B publication Critical patent/TWI315449B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0047—Photosensitive materials characterised by additives for obtaining a metallic or ceramic pattern, e.g. by firing
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
TW095104437A 2005-02-25 2006-02-09 Positive resist composition, method for forming resist pattern and compound TWI315449B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005050721A JP4397834B2 (ja) 2005-02-25 2005-02-25 ポジ型レジスト組成物、レジストパターン形成方法および化合物

Publications (2)

Publication Number Publication Date
TW200641522A TW200641522A (en) 2006-12-01
TWI315449B true TWI315449B (en) 2009-10-01

Family

ID=36927233

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095104437A TWI315449B (en) 2005-02-25 2006-02-09 Positive resist composition, method for forming resist pattern and compound

Country Status (5)

Country Link
US (1) US7504196B2 (zh)
JP (1) JP4397834B2 (zh)
KR (1) KR100881305B1 (zh)
TW (1) TWI315449B (zh)
WO (1) WO2006090591A1 (zh)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7923192B2 (en) * 2004-02-20 2011-04-12 Tokyo Ohka Kogyo Co., Ltd. Base material for pattern-forming material, positive resist composition and method of resist pattern formation
JP3946715B2 (ja) * 2004-07-28 2007-07-18 東京応化工業株式会社 ポジ型レジスト組成物およびレジストパターン形成方法
JP4468119B2 (ja) * 2004-09-08 2010-05-26 東京応化工業株式会社 レジスト組成物およびレジストパターン形成方法
JP4837323B2 (ja) * 2004-10-29 2011-12-14 東京応化工業株式会社 レジスト組成物、レジストパターン形成方法および化合物
TWI494697B (zh) * 2004-12-24 2015-08-01 Mitsubishi Gas Chemical Co 光阻用化合物
US7981588B2 (en) * 2005-02-02 2011-07-19 Tokyo Ohka Kogyo Co., Ltd. Negative resist composition and method of forming resist pattern
JP5138157B2 (ja) * 2005-05-17 2013-02-06 東京応化工業株式会社 ポジ型レジスト組成物およびレジストパターン形成方法
JP4813103B2 (ja) 2005-06-17 2011-11-09 東京応化工業株式会社 化合物、ポジ型レジスト組成物およびレジストパターン形成方法
JP4732038B2 (ja) 2005-07-05 2011-07-27 東京応化工業株式会社 化合物、ポジ型レジスト組成物およびレジストパターン形成方法
US7960089B2 (en) * 2005-09-20 2011-06-14 Tokyo Ohka Kogyo Co., Ltd. Compound, method for producing same, positive resist composition and method for forming resist pattern
JP2009227613A (ja) * 2008-03-24 2009-10-08 Jsr Corp アレーン系化合物
JP5542412B2 (ja) * 2009-10-28 2014-07-09 東京応化工業株式会社 ポジ型レジスト組成物、レジストパターン形成方法、高分子化合物

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06266109A (ja) * 1993-03-15 1994-09-22 Fuji Photo Film Co Ltd ポジ型感光性組成物
TW448344B (en) 1995-10-09 2001-08-01 Shinetsu Chemical Co Chemically amplified positive resist composition
JP3239772B2 (ja) * 1995-10-09 2001-12-17 信越化学工業株式会社 化学増幅ポジ型レジスト材料
US6037098A (en) 1997-03-31 2000-03-14 Fuji Photo Film Co., Ltd. Positive photosensitive composition
JP3773139B2 (ja) * 1997-03-31 2006-05-10 富士写真フイルム株式会社 ポジ型感光性組成物
JPH11167199A (ja) 1997-12-03 1999-06-22 Fuji Photo Film Co Ltd ポジ型フォトレジスト組成物
JP2002099089A (ja) 2000-09-26 2002-04-05 Yasuhiko Shirota 感放射線性組成物
JP2002099088A (ja) 2000-09-26 2002-04-05 Yasuhiko Shirota 感放射線性組成物

Also Published As

Publication number Publication date
US20080145784A1 (en) 2008-06-19
WO2006090591A1 (ja) 2006-08-31
JP4397834B2 (ja) 2010-01-13
US7504196B2 (en) 2009-03-17
KR100881305B1 (ko) 2009-02-03
JP2006235310A (ja) 2006-09-07
TW200641522A (en) 2006-12-01
KR20070101351A (ko) 2007-10-16

Similar Documents

Publication Publication Date Title
EP1806619A4 (en) RESERVE COMPOSITION, METHOD OF FORMING RESIST PATTERN, AND COMPOUND
TWI315449B (en) Positive resist composition, method for forming resist pattern and compound
TWI318724B (en) Method for forming positive resist composition, positive resist composition, and method for forming resist pattern
TWI369580B (en) Photosensitive composition, compound for use in the photosensitive composition and pattern forming method using the photosensitive composition
TWI347312B (en) New compound, polymer compound, resist composition and method for forming resist pattern
EP2157477A4 (en) PHOTO-LACK COMPOSITION FOR NEGATIVELY DEVELOPING AND STRUCTURE-FORMING METHODS WITH PHOTOLACK COMPOSITION
GB0508660D0 (en) Advanced pattern definition for particle-beam exposure
TWI341440B (en) Resist composition, method for forming resist pattern, and semiconductor device and method for manufacturing the same
EP1717261A4 (en) POLYMER COMPOUND, PHOTORESISTIC COMPOSITION WITH SUCH A POLYMER COMPOUND AND METHOD FOR FORMING A RESISTANCE STRUCTURE
EP2309332A4 (en) POSITIVE TYPE SENSITIVE SENSITIVE COMPOSITION, AND RESIST PATTERN FORMATION METHOD
EP1739485A4 (en) RESISTANT COMPOSITION
EP1854863A4 (en) LUMINOPHORE, PROCESS FOR PRODUCING THE SAME, AND APPLICATION
EP2177506A4 (en) POSITIVE RESIST COMPOSITION, PATTERN FORMATION METHOD USING THE COMPOSITION, AND COMPOUND USED IN THE COMPOSITION
EP1962852A4 (en) COMPOUNDS, COMPOSITIONS AND METHODS
EP1736485A4 (en) POLYMER COMPOUND, PHOTORESIST COMPOSITION CONTAINING SUCH POLYMER COMPOUND, AND METHOD OF MAKING RESIST PATTERN
TWI349165B (en) Resist composition and patterning process
EP2252915A4 (en) RESERVE COMPOSITION AND METHOD USING THE SAME TO FORM A PATTERN
TWI319121B (en) Positive resist composition and method for forming resist pattern
EP2177952A4 (en) POSITIVE RESIST COMPOSITION AND METHOD FOR PATTERN FORMATION USING THE POSITIVE RESIST COMPOSITION
EP1882981A4 (en) POSITIVE RESISTANCE COMPOSITION AND RESISTANCE GENERATION PROCESS
TWI370328B (en) Photosensitive compound, photosensitive composition, resist pattern forming method, and device production process
GB0516245D0 (en) Process, composition and compound
TWI350945B (en) Positive resist composition and resist pattern formation method
EP1860069A4 (en) PROCESS FOR PREPARING A COMPOSITION
EP1813990A4 (en) PROCESS FOR GENERATING A RESISTANCE STRUCTURE

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees