TWI310247B - Compound semiconductor device - Google Patents

Description

1310247 (1) EMBODIMENT OF THE INVENTION [Technical Field] The present invention relates to a compound semiconductor device constructed by arranging electrodes on a stacked structure which is formed by using a hexagonal single crystal. Provided on the surface of the single crystal, a boron nitride-based semiconductor layer and a compound semiconductor layer formed of a compound semiconductor on the phosphide-based semiconductor layer, the compound semiconductor device in the aforementioned single crystal layer (• 1.1) .-2.0.) The surface of the crystal face is provided with a phosphide boron-based semiconductor layer of the aforementioned hexagonal crystal. [Prior Art] Up to now, as disclosed in JP-A HEI 2-28 83 8 8 , for example, has been made of cubic sphalerite crystal gallium phosphide (GaP) or tantalum carbide (SiC) single crystal. The phosphide boron-based semiconductor layer is formed on the substrate. In JP-A HEI 2-28 8 3 7 1 and JP-A HEI 2-27 56 8 2, a light-emitting diode (LED) of a compound semiconductor device is formed on the substrate and formed thereon. The phosphide-based semiconductor layer is composed of a group III nitride semiconductor layer disposed in such a manner as to be bonded to each other. In U.S. Patent No. 6, 1 944 744 B1, it is disclosed that a phosphide ruthenium-based semiconductor layer such as a monomer phosphide (BP) or the like is formed on a ruthenium single crystal (ruthenium) serving as a substrate. In U.S. Patent No. 6,609,021, a technique for constructing an LED in a stacked structure provided by a tantalum substrate, a monomer BP layer, and a group III nitride semiconductor layer disposed over the monomer BP layer is disclosed. As disclosed in JP-A HEI 2-275682, in the LED structure using a boron nitride-based semiconductor layer formed on a single crystal (2) 1310247 substrate, phosphating of cubic sphalerite crystals has hitherto been used. An ohmic electrode is disposed on the boron layer. As disclosed in JP-A HEI 4-84486, even in the conventional laser diode (LD), the ohmic electrode is configured to be in contact with the cubic boron phosphide layer. Further, as disclosed in JP-B SHO 55-3 834, a stacked structure provided by a group III nitride semiconductor layer formed of gallium hydride (GaN) and disposed on a single crystal substrate has hitherto been constructed in blue - And green LED. In φ JP-A HEI 4-213878, for example, the short-wavelength visible or near-ultraviolet or ultraviolet light constructed by a heterojunction of a clad layer formed of a group III nitride semiconductor material and a light-emitting layer is disclosed. The light emitting part of the LED. A field effect transistor (FET) connected to a high frequency operation is disclosed in JP-A HEI 10-287497, for example, using a group III nitrogen such as aluminum nitride-gallium (AlxGal-xN: 05X^1). The stacked structure of the semiconductor layer provided on the germanium substrate is constructed. In the meantime, as disclosed in JP-A 2004- 1 8629 1, a technique of constructing a light-emitting portion of a double heterogeneous (DH) structure using a cubic sphalerite-type crystalline boron phosphide-based semiconductor layer as a cladding layer is known. . A light-emitting layer constituting a light-emitting portion and a cubic phosphide-based semiconductor layer constituting a cladding layer as a barrier layer of the light-emitting layer may be used as the substrate, as disclosed in JP-A HEI 3-87019 The cubic sphalerite crystal is formed by gallium arsenide (GaAs). Even if the substrate is formed of tantalum and the boron nitride-based semiconductor layer is grown on the surface formed by the (1 1 1 ) crystal plane of the substrate, in any case, the layer formed by (3) 1310247 eventually still contains A large number of crystalline defects, such as poor stacking and twinning (T. Udagawa and G. Shimaoka, J. Ceramic Processing Res., Vol. 4, Vol. 2, 2003, pp. 80-83). If the substrate is formed of hexagonal 6H-type SiC and the monomer BP layer is on the surface of the other (〇.〇.0.1.) crystal, the grown layer eventually contains a large number of crystalline defects, such as twins (T. Udagawa et al., Applied Surf. Sci., (USA), Vol. 244, 2004, pp. 285-288, ru). Even in the case of using a stacked structure provided by a phosphide-based semiconductor layer containing a large amount of such crystalline defects, for example, there is still an inability to stably manufacture an LED having a high voltage in reverse and a high efficiency in photoelectric conversion display. A GaN layer grown on a sapphire (a-Al2〇3 single crystal) substrate, for example, contains a large amount of crystal defects such as dislocations. Even if a group III nitride semiconductor layer containing a large amount of crystal defects such as dislocations is used for a functional layer such as a light-emitting layer, there is still a problem that the fabricated L E D cannot raise the reverse voltage or improve the photoelectric conversion efficiency. Further, for example, by the FET structure as the electron transport layer (channel layer), the group III nitride semiconductor layer containing a large amount of crystal defects cannot be sufficiently appropriately increased due to the inability to obtain high electron mobility. Frequency properties, such as output power, are problems. The thin layer of the conventional boron phosphide-based semiconductor material and the group III nitride semiconductor material contains a reverse phase boundary ("Crystal Electron Microscopy", written by Hiroyasu Saka and issued by Uchida Rokakuho Co., Ltd., 1997, 11 25th, 1st edition, pp. 64-65) (Y Abe et al., Journal of Crystal Growth, Vol. 283, (4) 1310247, 2005, pp. 41-47). Heretofore, the compound semiconductor device is not necessarily manufactured by using a semiconductor layer having excellent crystallinity properties. Incidentally, the term "inverse domain (APD)" or "inverse boundary" (AP B ) as used herein means that the phase of the atomic arrangement in the crystal deviates from the boundary of 180 degrees (half cycle). This boundary often occurs in the ordered phase of binary alloys. The semiconductor layer and the bismuth nitride semiconductor layer, which contain a large number of reversed-phase boundaries and exhibit poor crystallinity, will hinder the achievement of LEDs with excellent luminous efficiency and FETs with excellent electrical properties and sufficient stability. Even if an ohmic electrode is disposed adjacent to a cubic phosphide-based semiconductor layer containing a large amount of crystal defects, there is still a problem that it is impossible to stably manufacture an LED having a high voltage and high photoelectric conversion efficiency in reverse, because it is used for operation. The operating current (device operating current) of the device will cause a desired leak via crystalline defects such as twins. Even if Schottky contacts are disposed on the surface of a cubic boron phosphide-based semiconductor layer serving as a crystallization® defect, they still have problems in that FETs superior to high-frequency properties cannot be stably manufactured. Because the gate that encounters large leakage currents and insufficient breakdown voltage problems will eventually form and the gate current will exhibit poor pinch-off properties. Although it has been disclosed above that the light-emitting portion of the short-wavelength visible light or the near-ultraviolet or ultraviolet LED can be formed by forming a heterojunction junction with the light-emitting layer of the group III nitride semiconductor material, the boron phosphide formed on the layer formed by the conventional cubic crystal is The bottom semiconductor layer will eventually become a crystalline layer containing a large amount of (5) 1310247 crystalline defects because there is insufficient lattice coordination with the underlayer. This layer, for example, will accompany the problem of a crystalline layer containing a large number of planar defects, such as twins and stacked defects, due to incompatibility with the underlying crystal lattice. In the case where, for example, a semiconductor layer containing a large amount of crystal defects and a boron nitride-based semiconductor layer is used as a cladding layer to fabricate a light-emitting portion of the LED, it has not been possible to stably produce a high-brightness LED. Because the occurrence of a short-circuit flow of the current used to operate the LED of the luminescent layer will prevent -φ from being used for surface expansion of the luminescence. The present invention has been made in view of the foregoing state of the art and aims at the following objects: (1) It is an object of the present invention to provide a semiconductor layer having a boron phosphide as a base capable of containing only a small density of crystalline defects such as twins and stacking defects. And a semiconductor device which is excellent in crystallinity and which can enhance the different properties of the device by using the phosphide boron-based semiconductor layer. (2) Another object of the present invention is to provide a compound semiconductor device capable of obtaining a stacked structure provided by a semiconductor layer excellent in crystallinity, even if the semiconductor layer is provided with a feature containing a large amount of crystal defects and enhancing the device The same applies to the substrate of the group III nitride semiconductor layer of the nature. (3) Another object of the present invention is to provide a compound semiconductor device capable of using a phosphide-based semiconductor material or a group III nitride semiconductor material having excellent properties including only a small amount of reversed phase boundaries. The resulting thin layer is excellent in optical properties and electrical properties. (4) Another object of the present invention is to provide a semiconductor device capable of supplying a boron nitride-based semiconductor layer which can reduce the operating current leakage of the device -8 - (6) 1310247 and function as a light-emitting device When the photoelectric conversion efficiency is improved, the reverse voltage 'acting as a field effect transistor gives the gate a high breakdown voltage' and improves the pinch-off property of the gate current. (5) Another object of the present invention is to provide a semiconductor light-emitting device capable of constructing a cladding layer which constitutes a DH structure light-emitting portion of a phosphide-based semiconductor layer, the phosphide-based semiconductor layer having It contains only a small amount of crystalline defects and enhances the excellent properties of luminescent properties. SUMMARY OF THE INVENTION A first aspect of the present invention, in terms of accomplishing the above object, relates to a compound semiconductor device constructed by arranging electrodes on a stacked structure using a hexagonal single a crystal, a phosphide-borated semiconductor layer formed on the surface of the single crystal, and a compound semiconductor layer disposed on the phosphide-based semiconductor layer and formed of a compound semiconductor, and characterized by having hexagonal crystals A boron nitride-based semiconductor layer on the surface of the (1·1 . - 2.0 . ) crystal plane of the single crystal layer is formed and disposed. A second aspect of the present invention is characterized by having a single crystal layer in the structure of the first aspect of the present invention, which is formed of sapphire (α-Α12〇3 single crystal). A third aspect of the present invention is characterized in that the hexagonal single crystal layer in the structure of the first aspect of the present invention is formed of a hexagonal π I nitride semiconductor. A fourth aspect of the present invention is characterized by having a boron phosphide-based semiconductor layer in a structure having the first aspect of the present invention -9 - 1310247 σ), which has a surface (1 · 1 · - serving as its surface) 2 · 0 _ ) crystal formation of crystal faces. A fifth aspect of the present invention is characterized in that the boron phosphide-based semiconductor layer in the structure of the first aspect of the present invention is composed of (1 · 〇· -1 · 〇·) crystals serving as a surface thereof The crystal of the surface is formed. A sixth aspect of the present invention is characterized in that, in the structure of the first aspect of the present invention, the (0.0.0.1.) crystal face of the inner side of the dish-formed boron-based semiconductor layer is substantially parallel to the layer The thickness direction is aligned, and the distance of n (n represents a positive integer of 2 or more) continuity (0.0·0·2.) crystal plane of the layer is substantially equal to the c-axis length of the single crystal layer. The seventh aspect of the present invention is characterized in that the number η of the aforementioned (〇.〇.0.2.) crystal faces in the structure of the sixth aspect of the present invention is 6 or less. An eighth aspect of the invention is characterized in that the compound semiconductor layer of the structure of the first aspect of the invention is formed of a hexagonal semiconductor material. A ninth aspect of the present invention is characterized in that the phosphide-based semiconductor layer and the compound semiconductor layer in the structure having the first aspect of the present invention are along the interface (1.1.-2.0). .) Crystal face bonding. A tenth aspect of the present invention is characterized in that, in the structure having the first aspect of the present invention, the phosphide-boron-based semiconductor layer and the compound semiconductor layer are disposed along the interface (1.0.-1.0. ) Crystal face bonding. An eleventh aspect of the present invention is characterized in that, in the structure of the ninth or tenth aspect of the present invention, the crystal face constituting the compound semiconductor layer and the phosphide boron-based Semiconductor layer (〇.〇·〇.〗_)

-10 - (8) 1310247 crystal planes 'are arranged substantially parallel to the stacking direction of the above-mentioned semiconductor layers. The twelfth aspect of the invention is characterized by the aforementioned phosphating in the structure having the first aspect of the invention A boron-based semiconductor layer formed of a semiconductor having hexagonal phosphide as a base without a reverse phase boundary. A thirteenth aspect of the present invention is characterized in that the electrode having the structure of the first aspect of the present invention is configured such that the device operating current is substantially parallel to the semiconductor layer constituting the phosphide boron base. The (0·0.0_1·) crystal plane and the (0.0.0.1.) crystal plane constituting the compound semiconductor layer flow in the direction of both. A fourteenth aspect of the present invention is characterized in that the electrode according to the first aspect of the present invention is configured such that the device operating current is substantially perpendicular to a semiconductor layer constituting the phosphide boron base (晶·〇.0.1.) The crystal plane and the direction of the (〇.〇〇.1·) crystal plane constituting the compound semiconductor layer. The fifteenth aspect of the invention is characterized in that the boron phosphide-based semiconductor layer in the structure having the first aspect of the invention is formed of hexagonal monocrystalline boron phosphide. The sixteenth aspect of the present invention is characterized in that the hexagonal monomer phosphide boron of the structure of the fourteenth aspect of the present invention has a C-axis length of 〇·52 nm or more and 0.53 nm or more. Small range. According to the first aspect of the present invention, since the electrode is disposed in a stacked structure, the stacked structure utilizes a hexagonal single crystal, a phosphide-bored semiconductor layer formed on the surface of the single crystal, and is disposed in the phosphating. a boron-based semiconducting-11 - 1310247 Ο) is provided on a bulk layer and is provided by a compound semiconductor layer formed of a compound semiconductor, and the compound semiconductor device constructed thereon is supplied to the foregoing single crystal layer and the foregoing boron phosphide formed of hexagonal crystals. On the surface of the (1.1.-2.0.) crystal plane of the bottom semiconductor layer, crystal defects containing only a small density, such as twinning and stacking defects, and excellent crystallinity of boron phosphide are formed. Semiconductor layer. As a result, a phosphide boron-based semiconductor layer excellent in crystallinity can be utilized in order to provide a high-performance semiconductor device. φ According to the second aspect of the present invention, the hexagonal single crystal layer is formed of sapphire (a-Al2〇3 single crystal) and the hexagonal phosphide-based semiconductor layer is disposed by (1.1.-2.0. The crystal face is formed on the surface of the sapphire, so that the <1.-1.〇.〇> direction parallel to the <1.-1.0.〇> direction of the sapphire can be stably formed and has a surface A hexagonal phosphide-based semiconductor layer of (1.1.-2.0.) crystal faces. According to a third aspect of the present invention, the hexagonal single crystal layer is formed of a group III nitride semiconductor, and a hexagonal group III nitride semiconductor having a crystal face serving as a surface thereof is bonded and bonded. a first stacked structural portion composed of a hexagonal phosphide-based semiconductor layer disposed to the surface of the group III nitride semiconductor, so that dislocations contained in the group III nitride semiconductor can further pass through an interface of the stacked structural portion It is diffused and suppressed, and proliferates toward the side of the semiconductor layer on which boron phosphide is used. Further, according to the third aspect of the present invention, the hexagonal phosphide-based semiconductor layer constituting the first stacked structure portion can provide the first surface on the upper surface thereof by further bonding the hexagonal group III nitride semiconductor to the upper side surface. Two stacking structure parts. By further providing the second stacked structure portion, a group III nitride semiconductor having a crystalline defect such as a threading dislocation or the like having a reduced density of further -12 - 5 (10) 1310247 can be produced. According to the third aspect of the present invention, it is possible to produce a stacked structure in which a semiconductor layer having excellent crystallinity can be supplied, and to exhibit the effect of producing a compound semiconductor device having excellent characteristics. According to a fourth aspect of the present invention, the boron nitride-based semiconductor layer is formed by (1.1.-2.0.) crystal planes of the hexagonal single crystal layer and has a surface (1.1.-2.0) serving as a surface thereof. .) on the surface formed by the crystal face, so that a hexagonal phosphide-based semiconductor layer having a surface serving as a (1.1.-2A.) crystal plane having a surface parallel to the hexagonal single crystal layer may be obtained. 1.-1.0.0> Direction Orientation<1.-1.0.0> Direction. The above-mentioned semiconductor layer of boron phosphide has a crystal defect of only a small density, for example, twin crystal, and is excellent in crystallinity. As a result, a semiconductor layer having hexagonal phosphide having excellent crystallinity as a base can be utilized in order to stably provide a high-performance semiconductor device. Furthermore, the fourth aspect of the present invention can form the phosphide boron-based semiconductor layer on the (1.1.-2.0.) crystal plane constituting the surface of the hexagonal single crystal layer, the phosphating® boron-based The semiconductor layer has a (1.1.-2.0.) crystal plane bonded to the surface, having a (1·1·······.) crystal plane serving as a surface thereof, and having a vertical alignment in the same direction (〇. a 0.1.) crystal plane, and a compound semiconductor layer composed of a group III nitride semiconductor, which is also formed on the (1.1.-2.0.) crystal plane of the surface of the semiconductor layer constituting the phosphide boron-based semiconductor layer, The semiconductor layer has a (1.1.-2.0.) crystal plane bonded to the surface, having a (1.1.-2.0.) crystal plane serving as a surface thereof, and having a vertical alignment in the same direction (〇·〇·〇. 1 .) crystal face. According to a fourth aspect of the present invention, the phosphide-based semiconductor layer and the compound semiconductor layer can each become a display-13-(11) 1310247 with almost no crystal defects such as a reverse phase boundary, a stack defect or A layer which is crystallizable and has excellent crystallinity, and shows the effect of producing a semiconductor light-emitting device which emits high-intensity light. According to the fifth aspect of the present invention, the hexagonal phosphide-based semiconductor layer is disposed on the surface of the hexagonal single crystal layer (1·1 . - 2.0 . ) a crystal having a (1.0.-1.0.) crystal plane serving as a surface thereof, so that a hexagonal phosphide-based semiconductor layer having a (1.0.-1.0.-·) crystal plane serving as a surface can be stably obtained. The surface has a <!._〗 〇.〇> direction parallel to the <1.-1.〇·〇> direction of the hexagonal single crystal layer. The semiconductor layer in which the boron phosphide is a base contains a crystal defect of only a small density, for example, twin crystals, and is excellent in crystallinity. Therefore, the fifth aspect of the present invention can stably provide a high-performance semiconductor device by using a semiconductor layer having hexagonal phosphide as a base which is excellent in crystallinity. Furthermore, the fifth aspect of the present invention can form a hexagonal phosphide-based semiconductor layer on the (1.1·· 2.0·) crystal plane constituting the surface of the hexagonal single crystal layer, and the hexagonal phosphide is The bottom semiconductor layer has a (1.0.-1". crystal plane bonded to the surface, having a (1_0·-1·0·) crystal plane serving as its surface and having a vertical direction in it ( a 0.0.0.1·) crystal plane, and a compound semiconductor layer formed of a hexagonal group III nitride semiconductor can also be formed on a (1.0.-1.0.) crystal plane constituting a surface of the phosphide boron-based semiconductor layer. The hexagonal group III nitride semiconductor layer has a (1.1.-2.0.) crystal plane bonded to the surface, having a (1 _ 1 · - 2.0 ·) crystal plane serving as a surface thereof and having a vertical alignment in the same (0.0.0 · 1 .) crystal face. According to a fifth aspect of the present invention, the phosphide-based semiconductor layer and the compound semiconductor layer can each become a display-14-(12) 1310247, exhibiting almost no crystal defects, such as a reverse phase boundary, a stack defect. Or a layer which is crystallizable and which is excellent in crystallinity, and exhibits an effect of producing a semiconductor light-emitting device which emits high-intensity light. According to a sixth aspect of the present invention, the phosphide-boron-based semiconductor layer has a (0·0.0.1.) crystal plane substantially parallel to the thickness direction of the layer, and n of the layer (η represents a positive integer of 2 or more) The distance of the crystal plane of the continuity (〇·〇.〇.2.) is substantially equal to the c-axis length of the aforementioned single crystal layer. Since the hexagonal phosphide-based semiconductor has excellent long-term matching properties with the hexagonal single crystal, the hexagonal phosphide-based semiconductor finally contains only a small amount of crystal defects and is excellent in crystallinity. According to the sixth aspect of the present invention, it is possible to form a compound semiconductor device including a semiconductor having only a small amount of crystal defects and having excellent crystallinity as a base, and thus exhibiting the characteristic properties of the semiconductor device of the compound. The effect. According to the seventh aspect of the present invention, since the boron nitride-based semiconductor layer is formed such that the number η of the (0.0.0.2 .) crystal faces can be 6 or less, the hexagonal phosphide obtained is obtained. The bottom semiconductor layer contains only a small amount of unfavorable dislocations and has excellent quality. With this configuration, the seventh aspect of the present invention reveals the effect of producing an LED excellent in electrical breakdown voltage. According to the eighth aspect of the present invention, since the compound semiconductor layer is formed of a hexagonal semiconductor material, a group III nitride semiconductor layer containing only a small density of reversed-phase boundaries and excellent in crystallinity can be used to produce high luminous intensity. The efficacy of short-wavelength visible light LEDs. According to a ninth aspect of the present invention, the boron phosphide-based semiconductive-15-(13) 1310247 bulk layer is formed with the compound semiconductor layer so as to be bonded along the (1.1.-2.0.) crystal plane serving as an interface. Therefore, a stacked structure composed of a hexagonal phosphide-based semiconductor layer having no reverse-phase boundary and a hexagonal compound semiconductor layer having no reverse-phase boundary can be stably formed. Due to the stacked structure, the ninth aspect of the present invention will result in stable fabrication of semiconductor devices, such as short-wavelength visible light LEDs, which are superior to optical and electrical properties. According to the tenth aspect of the present invention, since the boron phosphide-based bottom semiconductor layer is formed with the compound semiconductor layer so as to be bonded along the (1.0.-1.0.) crystal plane serving as an interface, it can be stably formed. A stacked structure composed of a hexagonal phosphide-based semiconductor layer without an inversion boundary and a hexagonal compound semiconductor layer having no reversed boundary. The tenth aspect of the present invention, therefore, will result in stable manufacturing, for example, 'short-wavelength visible light LED, which is superior to optical and electrical properties due to the stacked structure. According to the eleventh aspect of the present invention, the (0.0.0.1.) crystal plane of the semiconductor layer constituting the semiconductor layer of the compound and the semiconductor layer constituting the phosphide boron is parallel. Arranged in the stacking direction of the compound semiconductor, the impedance against the flow of the operating current of the device can be reduced. According to the eleventh aspect of the present invention, it is possible to produce an LED capable of producing a high-efficiency photoelectric conversion and a high-frequency field effect transistor (FET) which is less likely to encounter a power loss problem. According to the twelfth aspect of the present invention, since the phosphide-borated semiconductor layer is formed by, for example, a hexagonal phosphide-based semiconductor having no reverse phase boundary, the boron phosphide is bonded via the bonding. The product obtained as a compound semiconductor layer formed of a semiconductor to a compound semiconductor can be effectively used as a material layer for arranging a hexagonal compound semiconductor layer having no reverse phase boundary. Further, the twelfth aspect of the present invention brings about the effect of enabling a hexagonal compound semiconductor layer having no reverse phase boundary as, for example, a light-emitting layer and subsequently capable of producing a semiconductor device having high-intensity light emission. According to the thirteenth aspect of the present invention, the device operating current can be substantially parallel to the (0.0.0.1.) crystal plane of the semiconductor layer constituting the phosphide boron and constitute the compound. The direction of the ® (0.0.0.1.) crystal plane of the semiconductor layer flows, so the operating current can flow more smoothly. The thirteenth aspect of the present invention, therefore, will bring about the effect of being able to manufacture, for example, a LED having a positive small current. According to the fourteenth aspect of the present invention, the electrode current is configured such that the device operating current is substantially perpendicular to a (0.0.0.1.) crystal plane of the semiconductor layer constituting the phosphide boron base and constitutes the compound. The direction of both (0.0.0. 1.) crystal faces of the semiconductor layer flows, so the operating current can flow while encountering only a small impedance. According to the fourteenth aspect of the present invention, therefore, ® will bring about the effect of producing a high-frequency power FET which generates heat only with a small output loss. According to the fifteenth aspect of the present invention, since the phosphide-boron-based semiconductor layer is formed of hexagonal monomer phosphide, an ohmic electrode or a Schottky junction which causes only a small leakage current is customarily used. It is formed by disposing an electrode on the surface of a hexagonal monomer phosphide layer containing a particularly small density of crystalline defects. According to the fifteenth aspect of the invention, it is possible to provide an FET capable of facilitating the provision of a light-emitting device having high photo-electric conversion efficiency or a gate electrode having a high breakdown voltage and improving the pinch-off property of the gate current. -17-(15) 1310247 According to the sixteenth aspect of the invention, since the boron nitride-based semiconductor layer is formed of hexagonal monomer phosphide, the c-axis length of the boron phosphide may fall on In the range of 0.52 nm or more and 0.53 nm or less, it is possible to produce a layer formed of hexagonal phosphide boron containing only a small amount of crystal defects such as twins and stacking defects. Boron layer). Further, an excellent quality semi-conductor layer can be obtained by using a boron phosphide layer excellent in crystallinity. According to the sixteenth aspect of the present invention, it is possible to form a compound semiconductor device containing a semiconductor layer having a phosphide boron as a base having excellent crystallinity and φ, and to further improve the characteristic properties of the compound semiconductor device. [Embodiment] The present invention relates to a compound semiconductor device constructed by disposing an electrode on a stacked structure using a hexagonal single crystal and a boron phosphide formed on the surface of the single crystal. And a semiconductor layer disposed on the phosphide-based semiconductor layer and formed of a compound semiconductor layer formed of a compound semiconductor, wherein the compound semiconductor device is formed on a (1.1.-2.0.) crystal plane of the single crystal layer The aforementioned semiconductor layer of boron phosphide as a base formed of a hexagonal crystal is provided on the surface. The above-mentioned semiconductor layer of boron phosphide as a base is a crystal layer formed of a group III to group V compound semiconductor material containing boron (B) and phosphorus (P) which serve as basic constituent elements. For example, it is composed of a monomeric boron phosphide (BP) or a polymer B6P (B12P2) or a phosphide-alumina (Bi-χΑΙχΡ) containing, for example, boron (B) as a constituent element and a lanthanum element other than boron. a multi-cell mixed crystal of 0 <X < 1 ), borophosphide phosphide (BuGaxP, 〇 <X< 1 ) and boron phosphide indium-18- (16) 1310247 (ΒυΙηχΡ where 0 < χ <1) A conductor layer is formed. Further, the semiconductor layer is formed of a mixed crystal, for example, a nitrogen phosphating BNyPi-Y containing a group V element other than phosphorus (germanium) serving as a constituent element, wherein 〇 < γ < i ) and arsenic phosphide (BPi- yAsy where ( • < 1 ) ° is in a mixed crystal of a group III element other than boron (B). The preferred composition ratio of the lanthanum element other than boron (B) (the element X in the above group) is 0 40 or less. This is because the composition ratio (: when it exceeds 0.40, it is easy to form a semiconductor layer which is not hexagonal but cubic crystallized boron as the base. The above-mentioned wording "boron phosphide formed by hexagonal crystals is the bottom." "Conductor layer" means a hexagonal crystal layer containing boron (yttrium) and phosphorus as basic constituent elements. When considering factors such as crystal growth ease into control complexity, the hexagonal phosphide-based semiconductor layer is preferably used. The formation of bismuth phosphide (ΒΡ). Specific examples of the hexagonal single crystal layer, such as sapphire (α - Αΐ 2 〇 3 single crystal) and wurtzite type Ν 1 Ν ΠΙ 氮化 nitride semiconductor single crystal and such as zinc oxide (ΖηΟ Single crystal, type (wurtzite type) or 4Η-type or 6Η-type tantalum carbide or its single crystal bulk single crystals. In addition, it may have a non-polar crystal plane serving as its surface and be disposed on, for example, a LiAl〇2 cubic crystal. The Group III nitride semiconductor layer is exemplified. In particular, to achieve the hexagonal phosphide-based semiconductor layer contemplated by the present invention, the sapphire (α-alumina single crystal) substrate can be utilized most advantageously. a hexagonal phosphide-based semiconductor layer having a hexagonal phosphating half of a hexagonal Bravais lattice serving as its unit lattice, such as boron (0 < Y, the formula = χ) of phosphorus: ρ) and groups A semiconductor material with a boron content of -19-(17) 1310247 is used for the purpose of the 2H-layer, etc. ("Crystal Electron Display", written by Hiroyasu Saka and issued by Uchida Rokakuh〇" 1997, November 25, 1st edition, pp. 3-7.) Among the hexagonal phosphide-based semiconductor layers, especially the hexagonal phosphide-based semiconductor layer without a reverse phase boundary is preferred. To use the hexagonal for the bottom layer The surface of the semiconductor layer on which the phosphide-based phosphide is disposed is preferably formed by a (1. 1 · -2.0 .) crystal plane. Preferably, the layer is relatively disposed in the so-called sapphire φ stone (1.1 .-2.0.) on the surface of the crystal face, in other words A-plane. By using the sapphire (1.1.-2.0·) crystal plane (A-plane), it is not the ordinary sphalerite type but the hexagonal a semiconductor layer of boron phosphide as a base. This can be interpreted as assuming that atoms of crystals in a non-polar crystal plane constituting a (1.1 to 2.0) crystal plane such as sapphire have high covalent bonding for ease of manufacture. The hexagonal phosphide of nature is arranged as a bottom semiconductor layer. The (1.1.-2.0.) crystal plane of the aforementioned sapphire may be by CZ (Czochr. alski) method, Vernuuil method or .EFG (edge-defining film growth) method (for example, according to BRAIAN R. PAMPLIN, "Crystal Growth", 1975, Pergamon Publishing Co., Ltd.) The A-plane of a bulk single crystal grown or oxidized by chemical vapor deposition (CVD) or by physical means such as sputtering A-2JS surface of aluminum single crystal film. The hexagonal phosphide-based semiconductor layer can be formed by a gas phase growth means such as a halogen method, a hydride method or an organometallic chemical vapor deposition (MOCVD) method. That can be, for example, using triethylboron ((C2H5)3B) as the source of boron (B) and triethylphosphorus ((C2H5)3P) as -20-(18) 1310247 for phosphorus (P) Formed by the MOCVD method of the source. That can be formed by halogen CVD using boron trichloride (BC13) as the boron source and phosphorus trichloride (PC13) as the phosphorus (P) source. The growth temperature for the formation of the hexagonal phosphide-based semiconductor layer is preferably 700 ° C or higher and 1 200 ° C or lower, regardless of the combination of the boron source and the phosphorus source. By these growth means, hexagonal boron phosphide having a (1.1.-2.0.) crystal plane serving as a surface thereof can be formed on the surface of the hexagonal single crystal layer formed of the (1 · 1 · -2 · 0 .) crystal plane. The bottom semiconducting φ body layer. If the hexagonal phosphide-based semiconductor layer is formed on, for example, a surface formed by a (1.1.-2.0.) crystal plane of sapphire, a hexagonal phosphide-based semiconductor which is independently oriented according to a specific crystal orientation The layer can be formed by first supplying a source of phosphorus to the surface, followed by supplying a source of a group III element such as boron. If the boron phosphide-based semiconductor layer is formed by, for example, supplying phosphine (ph3) to triethylboron ((c2h5)3b) to sapphire (1.1.-2.0.) The surface formed by the crystal face is started according to the Lu MOCVD method, and hexagonal phosphating having a <1.-1.0·0·> direction parallel to the <1·-1·0.0_> direction of the sapphire can be obtained. A boron-based semiconductor layer. A study on whether the formed boron nitride-based semiconductor layer is a hexagonal crystal layer or not, and an orientation of the hexagonal phosphide-based semiconductor layer associated with the hexagonal single crystal layer may be utilized. For example, an analysis method such as electron diffraction or X-ray diffraction is performed. If the hexagonal phosphide-based semiconductor layer has a surface formed of (1.1.-2.0.) crystal faces and a <1.-1.0.0.> direction extending parallel to the hexagonal single crystal layer <1 .-1.〇.〇.> direction, the hexagonal phosphide-based semiconductor layer t. £ -21 - (19) 1310247 is characterized by containing only a small amount of crystallinity such as twinning and stacking defects. Defect, because it is disposed on, for example, the surface of the sapphire (1.1.-2.0.) crystal plane, and is oriented in a direction superior to the lattice pairing property. In particular, if the hexagonal phosphide-based semiconductor layer is formed of a monomeric boron phosphide (BP) having an orientation relationship with the surface-surface, a hexagonal phosphide containing no yttrium is used as a base. The semiconductor layer can be obtained in a region exceeding a distance of about 50 nm to 100 nm from the interface of the hexagonal single crystal layer. The reduction of the boundary density caused by twinning by the reduction of the density of the ruthenium crystal can be observed by the ordinary cross-sectional TEM technique. For example, a hexagonal phosphide-based semiconductor layer having excellent crystallinity such as a semiconductor layer made of a hexagonal monomer BP layer can be used as a semiconductor layer for forming, for example, a group III nitride semiconductor layer. A bottom layer of a single crystal layer excellent in crystallinity. A specific example of a group III nitride semiconductor layer which is advantageously disposed in a manner of bonding to the hexagonal phosphide-based semiconductor layer can be cited as wurtzite type GaN, A1N, indium nitride (InN), and a mixture thereof. Crystal, in other words, nitriding Ming - recorded - marriage (AlxGaylnzN where 0SX, Y, ZS1 and X + Y + Z = l). Further, a wurtzite-type gallium phosphide (GaN-γ γ γ wherein 0SY < 1) containing a group V element such as phosphorus (Ρ) and arsenic (As) other than nitrogen (N) and nitrogen can be cited. The hexagonal BP layer containing only a small amount of crystalline defects such as twins is excellent in crystallinity, and can be effectively used as a primer layer for forming a hexagonal compound semiconductor layer having excellent properties on the other. Specific examples of the hexagonal compound semiconductor layer can be cited as 2H-type (wurtzite type) or 4H-type or 6H-type SiC, ZnO (zinc oxide), wurtzite type GaN, A1N, nitrogen-22 - ( 20) 1310247 Indium (InN) and its mixed crystal, in other words, aluminum nitride-gallium-indium (AlxGaYInzN where 0SX, Y, ZS1 and X + Y + Z = l). Further, a wurtzite-type hexagonal nitrogen phosphide (Gani-γΡγ 〇^Υ<1) containing a V group element such as phosphorus (Ρ) and arsenic (As) other than nitrogen (Ν) and nitrogen may be cited. . The Schottky barrier FET, which is not limited to the compound semiconductor light-emitting device, can be constructed by using a hexagonal Group III nitride semiconductor layer containing a crystal defect having a reduced density and superior in crystallinity as an electron transport layer (channel layer). The channel layer may be formed of an undoped n-type GaN layer, that is, a layer obtained by intentional addition avoiding impurities. A hexagonal bismuth nitride semiconductor layer containing a reduced density of crystalline defects can be advantageously used for the fabrication of FETs having excellent high frequency properties because they exhibit high electron mobility. The present invention can realize the above structure such that the (0.0.0.1·) crystal plane of the compound semiconductor layer and the (0·0.0.1.) crystal plane constituting the phosphide boron-based semiconductor layer can be parallel to the compound semiconductor layer. Stacking direction row • column. The present invention can realize the above structure, so that the above-mentioned electrode can make the operating current of the device be substantially parallel to the (〇·〇·0.1.) crystal plane of the semiconductor layer constituting the phosphide boron and constitute the compound semiconductor layer. The direction of the (0.0.0.) crystal plane flows. Further, the present invention can realize the above structure such that the above-mentioned electrodes can cause the operating current of the device to be substantially perpendicular to the (0·0·0·1·) crystal plane of the semiconductor layer constituting the phosphide boron base and The direction of the (α·0_〇·ι:) crystal plane constituting the compound semiconductor layer flows. -23-(21) 1310247 Furthermore, the present invention can achieve the above structure such that the c-axis length of the hexagonal monomer phosphide can fall within the range of 0.52 nm or more and 0.53 nm or less. During the formation of the hexagonal BP layer on the non-polar surface of the hexagonal single crystal, for example, the (1.1.-2.0.) crystal plane, (A) the temperature for growing the BP layer is 750 ° C or higher and 900. °C or lower, and (B) the concentration ratio of the phosphorus source to the boron source supplied to the growth reaction system (so-called V/III ratio example) is in the range of 250 or higher and 550 or lower. . Furthermore, (C) if the growth rate of the BP layer falls within a range of 20 nm or more per minute and 50 nm or less per minute, it can be stably formed in a direction parallel to the thickness of the added layer ( A hexagonal BP layer having a (〇· 〇. 〇. 1 .) crystal plane regularly arranged in a manner of a velocity in a vertical direction and a stacking direction of the surface of the single crystal. The growth rate of the hexagonal BP layer, when the concentration of boron source supplied to the growth reaction system per unit time is increased, can be substantially proportional to the increase in concentration within the aforementioned growth temperature range. When the boron source concentration supplied to the growth reaction system per unit time is fixed, the growth rate will increase as the growth temperature increases. If the temperature falls below 75 ° C, since the boron source and the thermal decomposition of the phosphorus source are not sufficiently performed, the growth rate suddenly drops and the above-mentioned beneficial growth rate cannot be achieved. If the hexagonal BP layer system is formed by, for example, phosphine (pH 3) as a phosphorus source and triethylboron ((c2h5)3B) as a boron source, the formation temperature is fixed at 800. (3), the ratio of PH3/(C2H5)3B, that is, the ratio of the raw materials supplied to the growth reaction system -24 - (22) 1310247, at 400, and the growth rate is under each female nanometer. If the growth temperature exceeds 9 〇〇, too high will be possible, for example, for a sudden disadvantage of the polymerized boron phosphide crystals such as B6P. If the growth rate falls to 20 nm per minute or if the rate exceeds the clock Any of the 5 nanometers will make it difficult to stably obtain the formation of a chemically composed monomer BP. If the growth rate is steeply less than Lu 2 nanometer, the final formation of a non-quantitative chemical composition of the BP layer Narrow) will increase suddenly more than phosphorus (P). If the growth rate exceeds 5 nanometers per minute, too high will suddenly increase the final shape. A hexagonal BP layer having a substantially stoichiometric chemical composition and satisfying the beneficial growth temperature specified in item (A) and the beneficial V/III ratio step described in item (B) satisfying the growth conditions described in item (C) The length of the c-axis in the hexagonal unit lattice (refer to Lu, "The crystal electron microscope for the materials researcher Hiroyasu Saka was prepared and issued by Uchida Rokakuho shares, 1997, November 25, 1st edition , pages 3 to 7 are in the range of 0.52 nm or more and 0.53 nm or less. Arranged in such a manner as to have a nearly parallel relationship in the vertical direction (the growth direction of the BP layer, the stack) (〇·〇 〇. 1.) In the 71 layers of the crystal plane, the current used to operate the device (device operating current) can flow in a direction parallel to the (0 · 0 . 〇. 1 .) crystal plane. Figure 3 The description is initiated by a square clock 35 perpendicular to the C-axis direction of the hexagonal BP layer 20. The formed per minute is measured by the amount of boron per minute (the b rate is as high as the formation of the defect, and the formation is made, for example), Limited company) will simply collapse the direction, square BP easily lifted to watch -25- ( 23) The arrangement of the phosphorus atom (p) and the boron atom (B) of 1310247. Incidentally, the C-axis direction is perpendicular to the (〇·〇·〇.1·) crystal plane. It is perpendicular to the hexagonal BP layer. The direction of the C-axis of 20, as illustrated in Fig. 3, has a gap 20H' depending on the arrangement of the phosphorus atom (P) and the boron atom (B). The phosphorus and boron atoms constituting the hexagonal BP layer 20 (P) And B), the current (electron) will pass through the gap 20H existing on the (〇.〇.0.1.) crystal plane and will diverge unobtrusively, and will be parallel to the (〇. 〇. 〇. 1.) The direction of the crystal face is convenient to flow. The gap between the phosphorus and boron atoms in the crystal is present in the hexagonal BP layer parallel to the direction of the (0.0.0.1.) crystal plane. In Fig. 4, by the parallel The arrangement of the phosphorus atom (P) and the boron atom (B) crystal is observed in the c-axis direction of the hexagonal BP layer 20. As exemplified in Fig. 4, there is a hypothetical regular hexagonal interval 20H in plan view. Phosphorus and boron atoms in the surrounding 'Therefore, the dominating purpose of causing the operating current of the device to flow without being diverged is achieved. The c-axis of the hexagonal BP layer 20 is vertical. Page 4 of Figure 4. The hexagonal BP layer formed on a hexagonal single crystal having a (0.0 _ 0 · 丨 ·) crystal plane perpendicular to the surface of the single crystal is characterized by containing only a small amount of, for example, twins and stacks. A crystalline defect such as a defect. This can be interpreted as assuming that the BP layer is disposed on a small-polar surface having a (0·0.0.1 .) crystal plane in a hexagonal single crystal arranged in an almost parallel relationship. The device operating current is caused to flow in a direction parallel or perpendicular to the (mi.) crystal plane of the hexagonal BP layer without being hindered by the twin boundary. The boundary enthalpy produced by twinning decreases as the twine density decreases.

-26- S (24) 1310247 TEM technology observed. The hexagonal monomer BP layer is particularly useful as a bottom of an in-nitride semiconductor layer for forming a lattice constant having an a-axis close to each other. The a-axis of the hexagonal monomer BP is about 0.319 nm and is measured with The - a-axis of GaN is the same. On the hexagonal monomer BP layer, a GaN layer excellent in crystallinity can be formed by mechanical processing of a different lattice. _ A p-n junction heterostructure capable of -φ high-intensity light emission can be formed by using a group III nitride semiconductor layer having excellent crystallinity. For example, heterojunction luminescence in an LED having a GaN layer serving as a cladding layer and GaxIiM-xNCOSXCl as a light-emitting layer can be formed. By using a light-emitting portion formed of a group III nitride semiconductor layer excellent in crystallinity, a semiconductor layer exhibiting high luminance and superior in electrical properties such as a reverse voltage is provided. The hexagonal monomer BP layer is particularly useful as a bottom layer for the purpose of forming a fibrous hexagonal aluminum nitride-gallium type hexagonal aluminum-gallium (composition formula: AlxGaYN where 0SX, YS1 and X + Y= l has a c-axis length close to the c-axis length (0.52 nm to nanometer) of the hexagonal monomer BP layer. The hexagonal monomer BP layer is used as the underlying AlxGaYN (0SX, YS1 and X + Y) =l) The layer is superior to the (〇·〇.〇·1 ·) crystal plane which is arranged parallel to the hexagonal ruthenium layer by the superior lattice machining (〇.〇·〇·1 .) Crystalline. A (0.0.0.1·) crystalline compound semiconductor layer arranged in a nearly parallel relationship, similar to the above-described hexagonal germanium layer, enables the operating current to be easily dependent on the direction of the c-axis, that is, perpendicular to ( 0 · 0

Extremely connected. The hexagonal yoghurt is produced by a device having a surface profile of 0.53 which is partially nitrided by the knot-extractable zinc ore. 0.1. (S -27- (25) 1310247 ) The direction of the crystal plane flows. It is also possible to easily operate the current of the device in a direction parallel to the (0_0.0.1.) crystal plane. The hexagonal compound semiconductor layer having such a (晶.〇.0.1.) crystal face array can be used as a functional layer for predicting formation of a compound semiconductor device. For example, by using AlxGaYN which is superior to crystallinity by having a crystal plane arranged in a nearly parallel relationship, 0 <X,Y<1 RX + Y=l The layer can form a pn-junction heterostructure that produces high-intensity luminescence. For example, a heterojunction light-emitting portion in an LED having a GaN layer serving as a cladding layer and GaxIni_xN (0<X<1) serving as a light-emitting layer may be formed. A compound semiconductor having a reverse low voltage can be provided by using a light-emitting portion formed of a compound semiconductor layer which is easy to flow by the operation current of the device and has a (0·0.0.1.) crystal plane regularly arranged in an almost parallel relationship Light emitting device. When a stack structure for a compound semiconductor device having a hexagonal BP layer as described above and a light-emitting portion formed thereon is provided with an ohmic electrode, the device operating current may be parallel to or constitute the hexagonal BP layer. The flow of the hexagonal compound semiconductor layer (in the direction perpendicular to the direction of the c-axis) in the direction of the (0.0.0.1.) crystal plane can be made into a compound semiconductor light-emitting device which provides only low resistance to the current flow of the device operation. For example, a hexagonal BP layer 32 disposed on the conductive hexagonal A1N substrate 31 and a light emitting portion 33 disposed on the same and formed of AlxGaYInzN (0SX, Y, ZS1 'X + Y + Z = 1 ) are provided. The stacked structure 30, as exemplified in FIG. 5, can be disposed on the light emitting portion by one polarity ohmic electrode 34 and the other polarity ohmic electrode 35 on the substrate 31-28-(26) 1310247 Made on the reverse side. In other words, the fabrication is accomplished by having a plurality of electrodes disposed above and below the stack structure 30 such that they can sandwich the substrate 31, the hexagonal BP layer 32, and the light emitting portion 33. For example, a hexagonal BP layer 42 disposed on a conductive hexagonal GaN substrate 41 and a luminescence disposed on the other side and formed by AlxGaYInzN (0SX, Y, ZS1, X + Y + Z = l ) can be fabricated. The stacked junction structure 40 provided by the portion 43 is disposed on the light emitting portion by the polarity ohmic electric-φ pole 44 and the other polarity ohmic electrode 45 is interposed between the light emitting portion 43 as exemplified in Fig. 6. On the surface of the hexagonal germanium layer 42 between the substrate 41 and the surface of the hexagonal germanium layer 42 is formed to produce a compound semiconductor light-emitting device capable of flowing the device operating current only in a direction perpendicular to the (晶.〇.0.1.) crystal plane. In place of the compound semiconductor light-emitting device, the Schottky barrier MESFET can be manufactured by using a hexagonal compound semiconductor layer containing only a low-density crystalline defect and superior in crystallinity as an electron transport layer (channel layer). The channel layer can be formed, for example, by a highly pure, undoped n-type GaN layer deliberately added to avoid impurities. A hexagonal group III nitride semiconductor layer containing only a low density of crystalline defects facilitates the fabrication of MESFETs superior to high frequency properties because it enables high electron mobility. In the manufacture of the MESFET, in order to ensure a large saturation current, it is suitable for the device operating current to function as an electron transport layer (channel layer) 53 perpendicular to the configuration, the channel layer being bonded to the substrate 51. The source 55 and the drain 56 of the (0.0.0.1·) plane of the hexagonal compound semiconductor layer on the surface of the hexagonal compound layer 52 (parallel to the c-axis direction) are exemplified as shown in FIG. The surface -29-(27) 1310247 of the electron supply layer 5 4 of the stacked structure 50 is laterally opposed. Accordingly, the present inventors have discovered a preferred arrangement and completion of the crystal plane associated with the crystalline structure of the hexagonal boron phosphide layer. Due to the use of this discovery, the impedance to the flow of the operating current of the device is reduced and the appropriate device can be enhanced. efficacy. The present invention can construct a hexagonal single crystal layer by using a group III nitride semiconductor and attaching a first stacked structure portion partially composed of a hexagonal group III having a (1.1.-2.0.) crystal plane serving as a surface thereof. a nitride semiconductor layer and a hexagonal phosphide-based semiconductor layer disposed to be bonded to the surface of the group III nitride semiconductor layer, or a structure capable of constructing a structure with a second stacked structure portion, the second stack The structural portion is obtained by bonding a group III nitride semiconductor to the upper surface of the hexagonal phosphide-based semiconductor layer constituting the first stacked structure portion. The phosphide-based semiconductor layer for forming the first stacked structure portion is in the form of an η-type or p-type conductive layer depending on the type of the target device. Further, in view of the intended device, a π-type or V-type high-resistance boron phosphide-based semiconductor layer is used. The bonding is bonded to the group III nitride semiconductor layer, such as cubic or 3C-type, 4Η-type or 6Η-type tantalum carbide (SiC) or GaN (see, for example, T. Udagawa et al., Phys. Stat. Sol., 0 (7) (2003), p. 2027), the configuration of the cubic sphalerite-type phosphide-based semiconductor layer can exhibit the inhibition of boron phosphide composed of the first stacked structure portion. The bottom semiconductor layer exhibits the function of dislocation penetration. When a hexagonal phosphide-based semiconductor layer is disposed on, for example, a hexagonal crystal layer of SiC or zinc oxide-30-(28) 1310247 (ZnO) or the like having a (1.1.-2.0.) crystal plane serving as its surface, It shows that the above functions are more effective. When a hexagonal phosphide-based semiconductor layer disposed on a group III nitride semiconductor layer having a (1.1.-2.0.) crystal plane serving as its surface is used, it is particularly remarkable. This is because the crystal system is the same and the crystal face array forming these crystals is superior to the pairing property. Specifically, the present invention contemplates providing a compound semiconductor device in which the group III nitride semiconductor layer is ruined into the first stacked structure portion, which The first stacked structure portion is made of a hexagonal group III nitride semiconductor layer having a (1.1.-2.0.) crystal plane serving as a surface thereof and a boron phosphide group configured to be bonded to the surface of the group III nitride semiconductor layer. The composition of the semiconductor layer. The hexagonal group III nitride semiconductor layer having a (1.1.-2.0.) crystal plane serving as its surface may be formed, for example, by, for example, a non-polarized tantalum carbide or a GaN single crystal or the like (1 · -1 · 0) · 2 ·) The surface on which the crystal faces are formed. It can be formed by molecular beam epitaxy (MBE), for example, on the ♦ ( 1.-1.0.2.) crystal plane (R-plane) of sapphire. The boron phosphide-based semiconductor layer constituting the first stacked structure portion is preferably formed of hexagonal monomer BP. The hexagonal monomer BP may be formed on the underlayer which is formed of a hexagonal crystal having a small polar crystal face serving as a surface thereof. In particular, it is preferably formed on a hexagonal bismuth nitride semiconductor layer having a (1.1.-2.0.) crystal plane serving as a surface thereof. This is because the hexagonal B P layer can be easily and stably formed on the non-polar crystal plane of the hexagonal crystal. In fact, the hexagonal AlxGai-XN (OSXSl) layer having a (1.1.-2.0.) crystal plane serving as its surface has the advantage that it can be formed on only a small amount.

-31 - (29) 1310247 is a hexagonal monomer BP layer which is excellent in crystallinity and stacking defects and superior in crystallinity. This is because the hexagonal BP having an axis of about 0.319 nm and the hexagonal AlxGa!-xN (0SXS1) have substantially the same a-axis lattice constant, contain only a small density of crystalline defects and constitute the first stacked structure. A portion of the hexagonal BP layer can be formed by the foregoing means to initiate vapor phase growth of the hexagonal phosphide-based semiconductor layer. Regardless of the hand φ segment that may be suitable for the vapor phase growth, the phosphide boron-based semiconductor layer preferably has a <1.-1.0.0> parallel to the hexagonal bismuth nitride semiconductor layer as the underlayer; Direction direction <1.-1.0.0> direction. The orientation relationship of the two layers can, for example, be based on electron diffraction images. Next, the hexagonal phosphide-based semiconductor layer system is provided for the purpose of forming the first stacked structure portion on the underlayer formed of the hexagonal crystal having the (1.1.-2.0.) crystal plane serving as the surface thereof. The function of dislocation proliferation contained in the underlayer formed by hexagonal crystals. In the first stacked structure portion composed of a hexagonal #AlxGai-XN ( ) layer and a hexagonal BP layer formed by using the layer as a bottom layer, there is a dislocation in the hexagonal AlxGanN ( 0SXS1 ) layer by a hexagonal The interface of the BP layer prevents diffusion and proliferation in the upward direction. The dislocation diffusion inhibiting effect exhibited by the hexagonal BP layer constituting the first stacked structure portion can be clearly confirmed by the cross-sectional TEM observation of the region near the interface of the first stacked structure portion. Six using a hexagonal group III nitride semiconductor layer having only a small amount of twins and dislocations and disposed on a (1.1.-2.0.) crystal plane serving as a surface thereof

In the case of S-32-(30) 1310247, a semiconductor layer having a boron phosphide as a base, a group III nitride semiconductor layer containing a crystalline defect such as a diffusion dislocation having a particularly small density can be formed thereon. Thus, in accordance with the purpose, the present invention can be arbitrarily constructed by using a phosphide-based semiconductor layer constituting the first stacked structure portion and an upper surface of the semiconductor layer bonded to the phosphide-based semiconductor layer. The structure of the second stacked structure portion of the hexagonal group III nitride semiconductor layer is provided. Forming a group III nitride semiconductor layer of the second stacked structure portion, for example, 'AlxGai-XN (0SXS1) or gallium nitride-indium (composition formula: GaxIm-χΝ (0<X<1) and destined excellent Crystallinity. Since the hexagonal phosphide-based semiconductor layer constituting the first stacked structure portion is disposed on a hexagonal group III nitride semiconductor layer having a (1.1.-2.0.) crystal plane serving as a surface thereof, The ground has a (1.1.-2.0·) crystal plane serving as its surface. Therefore, a hexagonal nitride semiconductor layer having a (丨..2.0.) crystal plane serving as its surface can be effectively formed on the other side to serve as its a hexagonal group III nitride semiconductor layer of a second stacked structure portion of a (1.1.-2.0.) crystal face of a surface. When a hexagonal BP layer having a (K1._2.0.) crystal plane serving as a surface thereof is used as a bottom layer, For example, a hexagonal group 111 nitride having a (1.;1. Semiconductor layer. Use 'six hexagonal phosphide-based semiconductor layer to form a second When a group III nitride semiconductor layer having excellent crystallinity is laminated, a Ρ-η junction heterostructure formed over a crystalline group III nitride semiconductor layer can be formed on the other side. For example, it is used as a light-emitting layer. Layer of heart type 5 -33- (31) 1310247

The pn junction heterostructure provided by the GaxIn丨.XN (O^X^l) layer and the η-type and p-type AlxGai.xN ( 0^X51 ) layers serving as the cladding layer can form a double heterogeneity for the LED ( DH) junction light emitting part. The luminescent layer described above may be formed from a single layer or may be in a single or multiple quantum well structure. In any case, the use of the group III nitride semiconductor layer which is excellent in crystallinity constituting the second stacked structure portion can form a light-emitting portion containing a group I4 nitride semiconductor layer superior in crystallinity and thus can provide high luminance and excellent display. For example, a compound semiconductor light-emitting portion of an electrical property such as a reverse φ voltage. A hexagonal III disposed at a portion containing a crystal defect of only a small density and constituting a second stacked structure portion is formed by using a group III nitride semiconductor layer different in composition from a hexagonal group III nitride semiconductor layer constituting the second stacked structure portion. When the pn junction heterostructure on the group nitride semiconductor layer is formed, it is possible to suppress the propagation of crystal defects in the interface of the bismuth nitride semiconductor layer having two different compositions. As a result, the light-emitting portion can be formed using a group III nitride semiconductor layer having more excellent crystallinity. It is speculated that the stacking of the different Group III Zn nitride semiconductor layers results in the initiation of stress in these semiconductor layers and this stress will participate in the crystallinity of these semiconductor layers. With respect to a pn junction heterostructure formed by stacking different group III nitride semiconductor layers, the light-emitting portion of the pn junction DH structure can form a group III constituting the second stacked structure portion using wurtzite-type η-type GaN. The nitride semiconductor layer is stacked on the other side in the following order: η-type Al 具有 having a composition of 0.20 as a lower cladding layer. "Gao. 8G layer quantum well structure, η-type Ga 〇.9 serving as a well layer. 〇In().i()N layer and luminescent layer of n-type Alo.ioGao.90N layer serving as barrier layer and p-type serving as upper cladding layer

(· S -34- (32) 1310247

Obtained from Al0.Q5Ga().95N layer. The phrase "constituting a different group III nitride semiconductor layer" as used herein means a crystal layer having a different compositional element or a crystal layer having the same composition and a different composition ratio. With the layer different from the hexagonal group III nitride-material semiconductor layer constituting the second stacked structure portion, only the layer bonded to the surface of the hexagonal bismuth nitride semiconductor layer constituting the second stacked structure portion can be formed, and suppression can be achieved. The role of 'crystal defects' proliferation. Further, in the above-exemplified light-emitting portion structure of the lanthanum nitride semiconductor layer containing a group III-φ group element having almost different composition, by forming individual layers constituting the pn junction DH structure, it is further enhanced for suppression The role of proliferation of crystalline defects. In any case, the Pn junction DH structure formed of the Group III nitride semiconductor layer of excellent crystallinity according to the second stacked structure portion of the present invention can stably provide electrical properties exhibiting high luminance and superior to, for example, reverse voltage and the like. The compound semiconductor light-emitting portion. Instead of the compound semiconductor light-emitting device, an η-type group III nitride semiconductor layer on a hexagonal group III nitride semiconductor layer containing only a small density of crystalline defects and constituting a second stacked structure portion may be disposed for use in Xiao The electron transport layer (channel layer) of the teratom barrier FET. This channel layer can be formed, for example, by intentionally adding the resulting undoped η-type GaxIn丨-XN (OSXS1). The η-type Group III nitride semiconductor layer disposed on the hexagonal group III nitride semiconductor layer containing only a small density of crystalline defects and constituting the second stacked structure portion can exhibit high electron mobility. According to the above configuration of the present invention, it is possible to provide an FET excellent in high frequency properties.

-35- (33) 1310247 In the above-described inventive structure, the above-described semiconductor layer of boron phosphide as a base can be formed by using a crystal having a (1.1.-2.0.) crystal plane serving as its surface. According to the present invention, in the above-described inventive structure, the above-described semiconductor layer having phosphide as a base can be formed by using a crystal having a (1 . 0 . -1 · 0 ·) crystal plane serving as a surface thereof. According to the invention, in the above-described configuration, the compound semiconductor layer described above can be formed using a hexagonal semiconductor material. According to the invention, in the above aspect of the invention, the semiconductor layer having the phosphide boron as a base and the compound semiconductor layer can be formed by bonding to a (1·1·-2.〇·) crystal plane serving as an interface. According to the invention, in the above aspect of the invention, the semiconductor layer having the phosphide boron as a base and the compound semiconductor layer can be formed by bonding to a (H-1.0.) crystal plane serving as an interface. According to the present invention, in the above-described configuration, the above-described phosphide-based semiconductor layer containing a hexagonal phosphide-based semiconductor having no reverse phase boundary can be formed. In particular, the hexagonal phosphide-based semiconductor layer used in the above structure of the present invention is preferably formed of the above-mentioned hexagonal material single crystal bulk or single crystal layer and disposed to have a surface (1.1.-2.0.) serving as its surface. A crystal face or a (1.0.-1.0.) crystal face and having a (0.0.0 .1 ·) crystal face arranged in a direction perpendicular to the surface. It is preferably provided, for example, on a surface formed of (1.1.-2.0.) crystal faces of the wurtzite type hexagonal GaN, or on a surface formed of (1.0.-1.0.) crystal faces. In addition, it is preferably set, for example

S-36-(34) 1310247, on the surface formed by the (1.丨_2 〇) crystal plane of the aluminum nitride (AIN) single crystal substrate or the single crystal layer' or by (1.0.-1.0 .) The surface on which the crystal faces are formed. For example, a hexagonal GaN single crystal layer having a (ι.ι·-2·ο.) crystal plane as its surface or a Ν1 Ν single crystal layer can be obtained by, for example, using a solid source or a gas source such as VIB E method. The phase growth mode is formed on, for example, a bottom layer formed of sapphire having a (2) crystal plane as its surface. # The hexagonal single crystal layer has a surface formed by a (1.1.-2.0.) crystal plane or a (1.0.-1.0.) crystal plane having a (0.0.0.1.) crystal plane regularly arranged in a direction perpendicular to the surface. This fact will be explained below with reference to the crystal structure of the hexagonal material segment exemplarily illustrated in Fig. 13. Figure 13 is a schematic diagram illustrating the arrangement of atoms in the joint region. Referring to Fig. 13, a hexagonal compound semiconductor material 10 and a hexagonal phosphide-based semiconductor material 12 are formed in a mutually bonded manner and the wurtzite-type hexagonal compound semiconductor material 10 has a perpendicular to it (1.〇.-Φ 1 · 0 .) The (0.0.0 _ 1 ·) crystal plane 1 1 formed by the surface formed by the crystal face 10 a. In the (〇.〇.0.1 _) crystal face 11, a group II atomic plane 11a having a regularly arranged lanthanum element and a group V atomic plane lib having a regularly arranged group V element are alternately formed. On the surface 10a having atomic planes 11a and lib formed of almost different elements alternately regularly exposed to form the hexagonal compound single crystal 10, also in order to achieve a group III atom containing, for example, boron (B) or the like. The atomic plane and the atomic plane containing a group V atom such as phosphorus (P) are alternately arranged alternately, and the boron nitride-based semiconductor layer 12 having no reverse phase boundary can be effectively formed. -37- (35) 1310247 Incidentally, the phrase "without inverse boundary" or "without reverse boundary" as used in the present invention means that there are actually five boundaries/square centimeters or less of density at the boundary, including There is no inversion boundary. The hexagonal phosphide-based semiconductor layer having no reverse boundary can be formed by a vapor phase growth means of the above-described hexagonal phosphide-based semiconductor layer. In the case where this formation is carried out by the MOCVD method, for example, the growth temperature is preferably 75 ° C or higher and 1 200 ° C or lower. If the temperature falls below 750 φ °C, since it will hinder the boron source and the phosphorus source from being sufficiently thermally decomposed, it proves to be disadvantageous for promoting the growth of the hexagonal phosphide-based semiconductor layer without the reverse boundary. Growth at temperatures in excess of 12 00 ° C proves to be unsuitable because of the lack of crystal faces of the semiconductor layer forming the hexagonal phosphide boring to cause a hindrance in obtaining a single crystal layer having no reverse boundary. In particular, it has been difficult to stably form a hexagonal phosphide-based semiconductor layer having no reverse boundary because it will cause an lack of an atomic plane formed by phosphorus (P) constituting a hexagonal phosphide-based semiconductor layer. # Next, when a hexagonal phosphide-based semiconductor layer having no inversion boundary is formed by MOCVD, the phosphorus (P) source to the growth system is boron (for the purpose of forming a P-type conductive layer). B) The ratio of sources (so-called V/III ratio) is preferably 120 or less. Furthermore, the V/III ratio is preferably between 20 or higher and 50 or lower. Next, in order to form a semiconductor layer having a hexagonal phosphide-based bottom which exhibits η-type conductivity without a non-phase boundary, the above V/III ratio is preferably 150 or more. Further, the V/III ratio is preferably 400 or more and 1 400 or less. When a hexagonal single crystal-38-(36) 1310247 layer having a (1.1.-2.0.) crystal plane serving as its surface is used, the surface energy can form a hexagonal hexagonal via the (1.1.-2.0.) to the surface thereon. A boron nitride-based semiconductor layer is grown in an epitaxial manner by atomic arrangement on the surface of a single crystal, acting as a (1.1__2.0.) crystal plane on its surface. When a hexagonal single crystal layer having a (1.0 -1 _ 0 _) crystal plane is used, the surface can be bonded to the hexagonal semiconductor layer of the surface via its (1·〇.-1.0·) crystal plane. It inherits on the surface of the hexagonal single crystal and grows in an epitaxial manner, and can have a ( ) crystal plane serving as its surface. For the sake of further explanation with reference to the schematic diagram of Fig. 13, the (1.1.-2.0.) crystal plane of the surface 12a or the inner side of the (1.0.-1.0.) square boron phosphide-based semiconductor material 12, (〇. 〇.〇1 3 is regularly arranged perpendicular to its surface 12a. This (I crystal face 13 is alternately formed in a steroid atomic plane 13a having a regularly arranged group III | and a regularly arranged V group 5 The inside of the group V atom plane 13b of Lu). That is, in the surface 12a of the body layer 12 formed by the hexagonal phosphide formed by the ( ) crystal plane or the (1.0.-1.0.) crystal plane, the 构成·〇 .〇.1.) The crystal plane atomic plane 13a and the group V atomic plane 13b are alternately repeated. As a result, the hexagonal group III nitride having a (1.1.-2.0.) crystal plane 1.0.) crystal plane serving as its surface is formed. The semiconductor layer is effectively, for example, an underlayer for the purpose of forming a hexagonal group III nitrogen layer having no reverse phase boundary. The crystal plane is bonded to the six and can have a surface on which the boron phosphide is formed as an atomic arrangement of 1.0.-1.0. Having a hexagonal plane serving as a crystal plane 0.0.0·1.) I boron (B 6-boron boron (P; 1.1.-2.0. bottom semi-conducting 13 of the III ground regular row or (1 · 0 - treated, lifted semi-conducting -39- (37) 1310247 in the presence of its surface (1.1_-2·0.) On the hexagonal semiconductor layer of the crystal plane, crystals can be formed via this (1.1.-2.0.) to the surface and have a non-polarity (1 · 1 _ -2.0) ·) Hexagonal nitride semiconductor layer. The phrase "non-face" as used herein means the charge attached to the plane of the group III atom and the charge on the plane of the group V atom due to the plane of the group III atom and the plane V. Exposure to the same amount so that the surface and polarity cancel out and neutralize the surface. In order to join to have a (1·1.-2·0·) crystal that acts as its surface, there is a non-polar (1.11 - 2.0) that acts as its surface. The (0.0.0.1.) crystal plane in the hexagonal compound semiconductor layer disposed in the manner of the hexagonal phosphorus-based semiconductor layer of the crystal face is ruled perpendicular to the direction of the surface. a (0.0·0· 1.) crystal plane parallel to the hexagonal phosphide-based semiconductor. The method of bonding, therefore, can form a very small amount of inversion boundary and contain only a small amount of twins and A hexagonal compound semiconductor layer which is superior in crystallinity and superior in quality. Next, on a semiconductor layer having a crystal plane of phosphide as a surface of (]_·〇·_ ί·0.) serving as a surface thereof, formation can be formed via Its (1.0.-1 surface is bonded to the surface and has a non-polar (1.0. crystal plane hexagonal group III nitride semiconductor layer serving as its surface. In order to bond to have a (1.0.-1.0.) crystal serving as its surface The (0.0.0.1·) crystal plane is perpendicular to the surface in a hexagonal compound semiconductor layer having a hexagonal phosphorus-based semiconductor layer serving as a nonpolar (1.0 to 1.0.) crystal plane of its surface Directional rules. Further, the polar surface of the semiconductor phosphide surface of the semiconductor phosphide bonded to the hexagonal phosphide boring is attached to the atomic plane and has boron in the portion, and the inner layer of the alignment layer is bonded. The hexagon of the defect • 0 ·) crystal - 1.0.) and the boron is in the middle, Arranging the inner layer of the layer - «S. -40 - (38) 1310247 (0.0.0.1.) crystal plane. This bonding mode, therefore, can be formed in a bonded manner with a very small amount of inverted boundary and contains only a small amount of stacking A hexagonal compound semiconductor layer which is defective and superior in crystallinity. In particular, the hexagonal phosphide-based semiconductor layer is advantageously formed using a monomeric boron phosphide (BP) layer. This is because the number of constituent elements required in this case is small as compared with the case of forming the above-described multiple mixed crystals based on boron phosphide, and thus the formation can be conveniently carried out without carrying - φ to control the complexity encountered when forming the composition ratio of the elements. Furthermore, it is selected to form the hexagonal compound semiconductor layer using aluminum nitride-gallium (composition formula: AlxGai_xN (0SXS1), and thus the AlxGai.xN layer formed is formed by a good lattice constant matching between boron phosphide and aluminum nitride-gallium. Containing only a small amount of crystalline defects. For example, via its (1.1.-2.0.) crystal plane bonding to a BP layer having a (1.1.-2.0.) crystal plane serving as its surface and having its surface ( 1.1.-2.0.) The GaN layer of the crystal face has almost no appreciable signs of twinning. The layer made of ® has excellent quality and has no reverse phase boundary, even through its (1.0.-1.0.) crystal plane bonding. The A1N layer having a BP layer serving as a (1·〇·-1.0.) crystal plane as its surface and having a (1.0.-1.0.) crystal plane serving as its surface shows almost no appreciable twinning and outward The same is true for the excellent quality layer having no reverse phase boundary. The hexagonal phosphide-based semiconductor layer and the hexagonal compound semiconductor layer have inverted boundaries, which can be distinguished, for example, by visually observing the TME image of the cross section. The phrase "no inversion boundary" is used in the present invention, for example , indicating that the density of the boundary is actually 5 boundaries / flat -41 - (39) 1310247 centimeters or less 'including the case without the inversion boundary. The hexagonal phosphorus can be studied by the electron diffraction method using TEM Boron-based semiconductor layers and the presence of twinning and stacking defects in the anti-phase boundary of the octagonal compound semiconductor layer. When the electron diffraction image shows the spread of divergence caused by additional dots or stack defects caused by twinning In the case of an indication, the present invention adopts a rule claiming that there is no twinning or stacking defects. For example, 'for example, a hexagonal compound semiconductor layer having a hexagonal • lanthanum nitride semiconductor layer such as the above nonpolar crystal face can be effectively used as A light-emitting portion for forming a nitride semiconductor light-emitting device capable of inducing high-intensity visible light band or ultraviolet light band light emission. It can also be effectively used as an electron transport layer (channel layer) or electron for manufacturing a field effect transistor (FET). a supply layer or a contact layer for forming an ohmic electrode such as a source or a drain or the like. The present invention 'in the above-described inventive structure enables the above phosphorus The boron-based semiconductor layer is formed inside such that the crystal plane can be substantially parallel to the thickness direction of the layer and η continuity (0.0.0.2 .) crystal plane (η indicates The distance of 2 or more positive integers is substantially equal to the c-axis length of the above single crystal. Incidentally, in the above-described inventive structure, the number η of the (0.0.0·2·) crystal faces is preferably 6 Or less. In the above-described inventive structure, when the hexagonal single crystal used is a bulk single crystal or a single crystal layer, it is particularly preferable to use a direction (growth direction) which is substantially parallel to the thickness of the layer (the growth direction). A hexagonal single crystal of a (0.0 · 0 · 1 ·) crystal plane aligned in the direction. The surface of this single crystal, therefore, for example, is formed by a (1.0.-1.0·) crystal plane or a (1.1.-2.0.) crystal plane. The measure used here -42- (40) 1310247 The phrase "increasing the direction of the layer thickness" indicates the direction in which the individual layers are stacked. In the following descriptions, sometimes it can be expressed as "vertical direction". The (0·0·0.1.) crystal plane is substantially parallel to the direction in which the layer thickness of the single crystal is increased. The phrase "substantially parallel" means a direction that preferably falls within a range of - ± 10 degrees with respect to the vertical direction. If this direction deviates from this range, the deviation will cause many twins and crystalline defects to be generated in the layers stacked on top of it. In the above-described inventive structure, the single crystal is provided with a semiconductor layer having a hexagonal squamous boron as a base on a surface formed by a (1.0.-1.0.) crystal plane or a (1.1.-2.0.) crystal plane. . For example, the hexagonal phosphorus is disposed on a surface formed by a (1.0.-1.0.) crystal plane or a (1.1.-2.0.) crystal plane of a 2H-type, 4H-type or 6H-type hexagonal tantalum carbide single crystal. A boron-based semiconductor layer. Next, on a surface formed of wurtzite-type aluminum nitride (A1N) or a (1_0·-1.0.) crystal plane or a (1.1.-2.0.) crystal plane made of wurtzite-type GaN, A hexagonal phosphide boron-based semiconductor layer. The hexagonal phosphide-based semiconductor layer is preferably provided on a single Φ crystal (1.0.-1.0.) crystal plane (generally referred to as "M plane or m plane") made of sapphire (α-ai2o3 single crystal) or (1.1.-2.0.) The surface formed by the crystal face (commonly referred to as "A plane or a plane"). Next, the boron phosphide is a bottom semiconductor, as described in detail herein below, such that the (0.0.0.2.) crystal plane is substantially perpendicular to the surface of the single crystal and also makes n continuity (〇·〇 The spacing of the 〇.2.) crystal faces (η represents a positive integer of 2 or more) is substantially equal to the c-axis length of the single crystal (the pitch of the (0.0.0.1) plane). The interval of the n-th continuity (〇.〇.0.2.) crystal plane of the phosphide-based semiconductor layer and the c-axis length of the single crystal are matched in the period of -43-(41) 1310247. Incidentally, the hexagonal (0.0.0.2.) crystal plane of the hexagonal phosphide is substantially perpendicular to the surface of the single crystal. The phrase "substantially perpendicular" means a range preferably relative to the vertical. If this direction deviates from this range, the deviation will cause a lot of crystal growth and crystal defects in the layer of the stack. The hexagonal boron phosphide-based semiconductor layer can be formed on the surface formed of, for example, the above crystal face by the above method. This φ is carried out by, for example, a growth means for forming a layer in a gas source MBE method or a chemical beam epitaxy (CBE) atmosphere. For example, when a boron nitride-based semiconductor layer is formed by a normal pressure (substantial atmospheric pressure) or a reduced pressure MOCVD method in a preferred crystal plane of the hexagonal single crystal, it has a direction parallel to the added layer ( The hexagonal phosphide-based semi-conducting of the (0.0.0.2) crystal planes arranged perpendicularly to the direction of the surface of the single crystal is formed by: (a) making the growth temperature 750 ° C or higher Low, (b) causing the concentration ratio of phosphorus (P) to B) supplied to the growth reaction system (so-called V/III ratio) to fall within a range of high and 500 or lower, and (c) The growth rate of the boron phosphide conductor layer is 20 nm or more per minute and every j m or less. The growth rate of the hexagonal phosphide-based semiconductor layer is substantially increased in proportion to the above-mentioned growth temperature concentration when the concentration of the III element such as boron (B) is increased in the growth reaction system. Then, when it is supplied to the growth reaction conductor layer per unit time, it is arranged to be vapor-phase grown on the surface of ±10 degrees, and can be formed on the true surface by a method of forming a hexagonal thickness direction. . . Or source-to-boron (400 or more bottom half + 30 奈 当 例 每 每 每 每 每 每 - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - Increase and increase. When it falls to 750. (: The following low temperature, (B) source and the source of phosphorus (P) are not sufficiently heat to suddenly drop the growth rate and will not reach the above preferred life. At the same time, the disadvantage of temperature increase above 850 °C is sudden initiation. Formation of polymerized boron phosphide crystals of composition B6P. MOCVD using phosphine (PH3) as a phosphorus source and triethylboron (-batter) as a boron source Forming the formation of the hexagonal BP 'for example', the formation is carried out by fixing the growth temperature, the ratio of the raw material concentration to the growth reaction system, the ratio of the PH3/(C2H5)3B is 45 ,, and The growth rate is under the nanometer. In order to achieve the surface formed on the preferred crystal plane of the hexagonal single crystal, a (0·0.0.2.) crystal plane having a parallel arrangement of a semiconductor layer with a vertical hexagonal phosphide as a base is formed. The hexagonal phosphide is the purpose of the ruthenium layer, the phosphating The growth of the bottom semiconductor layer preferably begins after the unwanted material of the surface has been desorbed. Preferably, the phosphorous semiconductor layer is, for example, the hexagonal single crystal is passed over the hexagonal boron phosphide. The growth of the semiconductor layer is preferably followed by growth, in other words, heating to a temperature exceeding 850 ° C to adsorb the desorption of molecules on the surface of the hexagonal single crystal. The hexagonal semiconductor layer is attached to the adsorption molecule. Thereafter, the surface of the hexagonal single crystal is preferably cleaned while being cleaned by desorption, and the growth of the hexagonal phosphide is related to the growth of the boron due to the decomposition, for example, having (c2h5). In the case of the 3b layer, 8 00. In other words, the semiconductor ground in the direction of the stabilizing surface on the 25th surface per minute is heated to the temperature of the superheated temperature of the adsorbed boron, and the phosphide is long in the semiconductor. Layer-45 - (43) 1310247 means that the MBE or CBE method for growth under high vacuum or reduced pressure chemical vapor deposition (CVD) in a reduced pressure environment is suitable. On the clean surface of the hexagonal single crystal formed by, for example, the above-described preferred crystal plane, a semiconductor layer which is long-matched with hexagonal phosphide as a base of the c-axis length of the hexagonal single crystal described above can be stably formed. The figure exemplifies a semiconductor layer display composed of hexagonal phosphide boring and a long-term matching appearance of the design of the present invention. This figure illustrates that the hexagonal single crystal 61 has a surface (61.-1.0) serving as its surface 61A. .) The sapphire of the crystal face and the hexagonal phosphide-based semiconductor layer 62 disposed to be bonded to the surface 61A is a long-term matching appearance produced when the B 〇 98 AQ.Q2P layer is formed. As shown in the figure, the (0·0.0·1·) crystal planes 61B are regularly arranged in a state of being substantially parallel to the direction perpendicular to the surface 61A. Inside the hexagonal phosphide-based semiconductor layer 62 bonded to the surface 61A of the hexagonal single crystal via the bonding surface 62, a total of six (0.0.0.2.) crystal faces 62B are parallel to the sapphire (φ 0·0.0) .1.) The crystal faces 61B are arranged. Specifically, in the bonding system 60 between the single crystal 61 and the hexagonal phosphide-based semiconductor layer 62, the cleaned sapphire surface 61A has a total of six sapphire c-axis equivalent to that shown in FIG. The (#.30. In other words, on the hexagonal single crystal 61, a hexagonal phosphide-based semiconductor layer can be formed under the following conditions: its c-axis length and (0.0.〇.2.) the total length of the crystal face 62B (= (nl) xd) (n represents a positive integer of 2 or more, such as 2, 3, 4, 5 or 6, and d represents the interval between adjacent (0.0.0.2.) -46- (44) 1310247 planes ) can be equal, in other words in a long-term match. The number of (0·0.0.2.) crystal faces is equal to at least 2 because the 値 of d is provided by the interval between two adjacent (0.0 _0_2.) crystal faces. That is to say, the 値 of η is 2 or more. In the BQ.98Al〇.Q2P mixed crystal layer or the BQ.99GaG.01P mixed crystal layer which is disposed on the surface formed by the (1 · 〇· -1 · 〇·) crystal plane of the sapphire, as described above The number of (• φ 0·0.0.2.) crystal faces constituting the long-term matching structure is 6, in other words, η is 6. However, η is 2 in the BP layer disposed in such a manner as to be bonded to the surface formed by the (1.0.-1.0.) crystal plane of GaN. Further, η is 2 in the BP layer disposed so as to be bonded to the surface formed by the (1.0.-1 · 0·) crystal plane of A1N. Next, η is 2 in the BP layer disposed in a manner of being bonded to the (1.1.-2.〇·) crystal plane of the single crystal of GaN or Α1Ν. If the surface of the hexagonal single crystal on which the boron nitride-based semiconductor layer is to be disposed is not sufficiently cleaned, the (面·〇·〇.2.) crystal plane arranged in the order illustrated in Fig. 18 is sequentially arranged. a hexagonal phosphide-based semiconductor layer, for example, due to the negative reaction of adsorbed molecular oxygen (〇) or water (η2ο) remaining on the surface, it will be hindered when it is produced with appropriate stability. . Similarly, if it is not a source material molecule for the growth of the hexagonal phosphide-based semiconductor layer, an unnecessary molecule such as carbon monoxide (C 〇), carbon dioxide (co 2 ), and nitrogen (Ν 2 ) remains in the adsorption state. On the surface of the hexagonal single crystal, there is a disadvantage in that a hexagonal phosphide-based semiconductor layer having the aforementioned long-term compatibility structure cannot be obtained with appropriate stability. Stablely obtaining the hexagonal phosphide boron which can achieve the aforementioned long-term compatibility

The disadvantage of the semiconductor layer of S-47-(45) 1310247 is due to the fact that it interferes with the sequential arrangement of the semiconductor-only planes constituting the hexagonal phosphide. Another attached molecule of this disadvantage may ultimately result from the formation of a plane index with the same crystal plane. Another semiconductor component in which the hexagonal phosphide is based on this disadvantage does not have a long region. When the hexagonal phosphating φ having a long-term matching structure is disposed in a joined state, it is important to clean it. The MBE method of forming a layer in a vacuum environment or the adsorbed molecules on the surface of the hexagonal single crystal may be detected by a high energy electron diffraction (RHEED) pattern. On the surface, the RHEED image assumes a ring (the ring is mainly derived from the point on the surface of the hexagonal single crystal or the molecular species on the surface of the streaked single crystal, for example, analysis by spectroscopy or ultraviolet absorption spectroscopy) Furthermore, when the hexagonal phosphide-based semiconducting layer is disposed on the surface of the hexagonal single crystal, if the lifetime is 20 nm or more than 30 nm per minute, the long-term compatibility of the hexagonal phosphide boron can be achieved. This is because the falling to less than 20 per minute will cause the formation of this (〇· 〇. 〇· 2 .) crystal face. The phosphorus (] is used to make long-term compatible structures (〇.〇· 〇 loss. This is also because if the growth rate is high enough

The (0.0 · 0 · 2 ·) crystal origin of the undesired molecule I is caused by the fact that the (0_0·0.2.) crystal plane is not caused by the fact that the boron-based semiconductor layer retained in the adsorbed molecule is actually a hexagonal single layer. The crystal provides an example of a clear CBE method, for example, by reflection if the adsorbed molecules remain) or after the light pattern is not. The adsorption is resolved in the hexagon by means of, for example, infrared absorption. The length of the bulk layer in the manner of bonding to less than each deviation will result in a low growth rate of the semiconductor layer's sufficient stable nanometer, and the atomic diffusion and the number of crystal planes. 30 nm, (S -48-(46) 1310247 The (0.0.0.2.) crystal plane must form an amount exceeding the number of (0.0·0·2.) crystal faces sufficient for the fabrication of the long-term mating structure ( In other words, η) in the present invention is arranged in a distance equivalent to the c-axis of the surface of the hexagonal single crystal to realize the long-term matching of the hexagonal phosphide-based semiconductor layer (〇.〇.0.2.) crystal. The number of faces, in other words, the η of the present invention, for example, can be obtained by electron diffraction or by using a cross-sectional ΤΕΜ technique of a transmission electron microscope (ΤΕΜ) to obtain a lattice image obtained. When the long-term matching structure of the invention is formed, a diffraction point emanating from a (0·0.0.1.) crystal plane of a hexagonal single crystal on the electron diffraction image appears to correspond to a semiconductor layer based on the hexagonal phosphide boron. (0.0.0.2.) The pitch of the diffraction point (η-1) times the crystal plane emits. In particular, by forming η to be 8 or less, Preferably, a long-term matching structure of 6 or less can obtain a semiconductor layer containing only a small amount of unsuitable dislocations and superior to crystallinity of hexagonal phosphide boron. The hexagonal phosphide is a bottom semiconductor layer. The unsuitable density generated in the direction of the c-axis of the hexagonal single crystal in a region perpendicular to the interface between the semiconductor layer adjacent to the phosphide boron and the hexagonal single crystal will be improved proportionally to the above η値According to the results of the study, the inventors confirmed that the long-term matching structure with η of 6 will obtain a hexagonal phosphide-based semiconductor layer of excellent quality, which will be reduced to less than a local inferior breakdown voltage and reveal only a small density. Inappropriate dislocations. A hexagonal phosphide-based semiconductor layer having a long-term matching structure of η of 2 or more and 6 or less can be effectively used as a bottom layer for forming an excellent quality growth layer superior to crystallinity because It contains a small density of inappropriate dislocations. The layer suitable for the boron phosphide-based semiconductor layer of the long-term matching structure is "49 - (47) 1310247, for example, for example, SiC, ZnO, GaN , AIN, InN and their mix a growth layer formed of a group III nitride semiconductor such as a crystal of AlxGaYInzN (〇SX, Y, ZS1 and X + Y + Z = 1). Next, a specific example of the group III nitride semiconductor layer may be cited as nitrogen-containing (N) And a growth layer formed of GaN丨-YPY (°^γ < 1 ) and GaNnAsYCOSYCl of a group V element such as phosphorus (P) or arsenic (As) other than nitrogen. By using the group III nitride semiconductor layer, which is formed on a semiconductor layer having a #long-term matching structure and containing only a small amount of inappropriate dislocations and serving as a bottom layer of hexagonal phosphide boron, the structure can be produced high. Intensity-emitting pn junction heterostructure. For example, a double heterojunction (DH) bonded luminescent part can be fabricated for use with, for example, an LED having a layer of AlxGaYN (0SX, Y51 'X + Y=l) acting as a cladding layer and a layer of GaxIr^-xNCtXXSl) acting as a luminescent layer. Light-emitting devices. Without the compound semiconductor light-emitting device, the Schottky barrier ME SFET can be formed by using a group 111 luminide semiconductor layer containing only a small density of crystalline defects and superior in crystallinity as an electron transport layer (channel layer). The channel layer can be formed, for example, by an intentionally added undoped n-type GaN layer that avoids impurities. The ηι group nitride semiconductor layer containing only a small density of crystalline defects is advantageous for obtaining Μ E S F E T superior to high frequency properties because the semiconductor layer exhibits high electron mobility. According to the invention, in the structure of the above invention, the phosphide-boron-based semiconductor layer can be formed of hexagonal monomer phosphide and the phosphide-borated semiconductor layer can be constructed to be supplied to the surface by electrodes. The hexagonal phosphide-based semiconductor layer-50-(48) 1310247 used in the above structure of the invention is formed by using a hexagonal single crystal layer or a single crystal substrate as its underlayer. In particular, the hexagonal phosphide-based semiconductor layer can be efficiently formed on the surface of a hexagonal single crystal layer or a single crystal substrate formed by a crystal plane lacking polarity or polarity. This is because the surface of the hexagonal single crystal layer or the single crystal substrate lacking or having no polarity has a semiconductor layer which can be arranged to conveniently produce hexagonal phosphide boron as a base. ~ The wording "in the non-polar crystal plane of the hexagonal phosphide-based semiconductor layer" in the -φ single crystal of the hexagonal compound material prepared by the combination of the element A and the element B, for example, means that the same surface is exposed The surface of element A and element B of density. The crystal face of this description is, for example, a (1_1·-2.0·) crystal plane of 2H-type SiC, wurtzite type GaN or A1N. The crystal surface of the sapphire stone (1.1.-2.0.) also conforms to this description. When a material having a small ionic property is selected for the production of a phosphide-based semiconductor layer formed on a crystal face of a hexagonal single crystal layer or a single crystal substrate lacking or having no polarity, hexagonal boron phosphide can be stably formed. The bottom of the semiconductor layer is Lu. When the phosphide-based semiconductor layer has a small ionic property, since it has a small ionic difference with a hexagonal single crystal layer or a single crystal substrate having no or no polarity, it can stably form a small amount such as twin crystal. An excellent quality of crystalline defects such as phosphide boron as a base semiconductor layer. Among the phosphide-based semiconductors, 'only the monomer phosphide phosphide is an ideal material for stably producing a hexagonal phosphide-based semiconductor layer because the ionicity (fi) is as small as 0.006 (refer to For example, '"Singapore Series Bands" (Physics Series 38), written by J · CP hi 11 ips and by

Published by Yoshioka Shoten K.K., 1 985, July 25, 3rd edition

-51 - < S (49) 1310247, p. 5 1). Since boron arsenide (BA s ) has a small fi of 0.00 2 (refer to, for example, the above-mentioned "energy band and bonding of a semiconductor" - page 51), a hexagonal phosphide-based semiconductor layer is also used. Boron arsenide (BAS1-YPY, 〇<Y^l) belonging to a mixed crystal containing BP can be stably formed. In particular, a phosphide-based semiconductor layer having a small ionicity and grown to obtain a (1.1.-2.0.) crystal plane serving as a surface thereof may be appropriately formed because it contains only a small amount of twinning and stacking defects. As a semiconductor layer capable of achieving the purpose of depositing an electrode conforming to the present invention. The hexagonal crystal layer of the semiconductor layer which is formed of the boron phosphide as the base can be inspected by an analysis means such as electron diffraction or X-ray diffraction. According to ordinary electron diffraction analysis, for example, it can be seen that the monomer BP bonded to the non-polar crystal face (1.1.-2.0.) crystal plane of the hexagonal GaN single crystal layer is a hexagonal wurtzite crystal. Floor. It can also be seen that the surface of the hexagonal BP crystal layer constitutes a non-polar (1.1.-2.0.) crystal plane. The a-axis of the wurtzite type hexagonal monomer BP is about 0.319 nm and, therefore, is the same as the a-axis of the hexagonal AlxGai.x:N ( ) of the group III nitride semiconductor layer. When the monomer BP is selected for the formation of the hexagonal phosphide-based semiconductor layer, a good lattice pairing is formed, so that a group III nitride semiconductor layer superior in crystallinity can be formed on the layer. A boron nitride-based semiconductor layer formed on a hexagonal crystal lacking or having no polarity can serve as an upper layer to contribute to the fabrication of a group III nitride semiconductor layer superior to crystallinity because the layer is superior to crystallinity. The ohmic electrode disposed in the hexagonal phosphide-based semiconductor layer may be formed of -52-(50) 1310247 various metal materials or conductive oxide materials. Regarding the phosphide-based semiconductor layer showing η-type conduction, for example, the n-type ohmic electrode may be formed of any alloy such as gold (Au)-germanium (Ge) alloy or gold-tin (Sn) alloy. The η-type ohmic electrode may be formed of an alloy containing a rare earth element, such as a lanthanum (La)-Ming (Α1) alloy. Further, the η-type ohmic electrode may be formed of an oxide material such as ZnO. Regarding the P-type boron phosphide-based semiconductor layer, the p-type ohmic electrode can be formed of a gold (Au)-zinc (Zn) alloy or a gold (Au)-tellurium (Be) alloy. The P-type ohmic electrode may also be formed of an indium (In) tin (Sn) oxide (I Τ 复合) composite material layer. The ohmic electrode having insufficient contact resistance is preferably formed of a low-resistance layer having a carrier concentration of about 1 × 10 18 cm 3 or more. The layer on which the ohmic electrode is disposed is preferably a low-resistance layer, and in any case, it may be a doped layer having intentionally added impurities or a deliberately added undoped layer avoiding impurities. In the case of a monomeric BP layer, both the n-type and P-type low-resistance layers which facilitate electrode formation can be easily obtained in an undoped form. The η-type and p-type ohmic electrodes are often suitably disposed on a semiconductor layer containing only a small amount of crystalline defects and superior to crystalline hexagonal phosphide. One of the ohmic electrodes is disposed on the semiconductor layer superior to the crystalline hexagonal phosphide-based substrate, and is disposed adjacently on the group III nitride semiconductor layer formed on the above layer serving as the underlayer and superior to the crystallinity The planning of ohmic electrodes can help produce semiconductor devices of superior quality. The Schottky junction formed on the hexagonal phosphide-based semiconductor layer can be formed, for example, of a transition metal such as titanium (Ti). It is also possible, for example, to form platinum (Pt). The use of a semiconductor layer superior to crystallinity and compliant with the six-53-(51) 1310247 square boron phosphide of the present invention can form a gate with only a negligible leakage current. In particular, a structure having a Schottky junction disposed on a high-impedance boron phosphide-based semiconductor layer can form a gate with only a negligible leakage current and superior to a breakdown voltage. Therefore, this configuration can contribute to the fabrication of high frequency Schottky FETs that are only accompanied by negligible leakage current and are superior to transconductivity. The high-impedance boron phosphide-based semiconductor layer can utilize a high-resistance φ-resistant hexagonal monomer layer that compensates for power by undoping or doping one or both of η-type and p-type impurities. form. Regarding the hexagonal phosphide-based semiconductor layer, the metal electrode for causing ohmic contact or Schottky contact can be formed by ordinary vacuum deposition, electron beam deposition, sputtering, or the like. Oxide materials such as IT Ο and Ζ Ο can be formed by ordinary physical film formation means such as sputtering and wet film formation, for example, gel method. The compound semiconductor device covered by the embodiment of the present invention will be described with reference to the drawings. In the respective embodiments, similar constituent elements are represented by similar reference numbers. The first embodiment will be explained below. [Embodiment 1] The present invention will exemplify the case of constructing a compound semiconductor LED by using a hexagonal monomer layer which is bonded to the surface formed by the (1.1.-2.0) crystal plane of the sapphire block crystal. Explain. Fig. 1 schematically illustrates the planar structure of the LED relating to Embodiment 1. Next, Fig. 2 is a schematic cross-sectional view showing the compound semiconductor device LED 1 taken along the broken line II-II of Fig. 1.

-54- (52) 1310247 Manufacture of the LED 1 The desired stack structure 100 is a sapphire (α-) having a (1·1·-2·0·) crystal plane (commonly referred to as "A-plane") serving as its surface. The aluminum oxide single crystal substrate is formed as the substrate 101. On the surface of the (1.1.-2.0.) crystal plane of the substrate 101, an undoped layer having a thickness of about 290 nm was formed in the form of a hexagonal phosphide-based semiconductor layer 102 by a conventional MOCVD method. Η-type hexagonal monomer layer. The surface of the hexagonal monomer layer constituting the semiconductor layer 102 constituting the hexagonal phosphide boron was shown as a (1.1.-2.0.) crystal plane by ordinary enthalpy analysis. Next, the <1.-1.0.0> direction of the sapphire substrate 101 and the <1.-1.0.0> direction of the hexagonal monomer layer 102 are oriented parallel to each other by the electron diffraction pattern. Further, it is found by the section ΤΕΜ technique that there is almost no distinguishable sign of the presence of twins in the hexagonal unit ruthenium layer 102. In the region of the inside of the hexagonal monomer layer which was separated by about 50 nm from the interface with the sapphire substrate 101, it was found that there was almost no discernible confusion in the lattice arrangement. ® grows a wurtzite-type hexagonal η-type GaN layer 103 on the surface formed by the (1.1.-2.0.) crystal plane of the hexagonal monolayer of the hexagonal phosphide-based semiconductor layer 102 (layer thickness) = 21〇〇 nanometer). By the analysis by the ordinary TEM, twinning and stacking defects are hardly observed in the inner region of the hexagonal GaN layer 103 in the vicinity of the interface with the hexagonal monomer BP layer constituting the hexagonal phosphide-based semiconductor layer 102. On the (1.1.-2.0.) surface of the hexagonal η-type GaN layer 103, a lower cladding layer 104 formed of hexagonal η-type AlQ.15Ga().85N is stacked in the following order (layer thickness = 150 nm) m), by Ga〇.85In〇.15N well layer

L-55- (53) 1310247 / AU.G1GaQ.99N energy barrier layer 5 cycles of multiple quantum well structure optical layer 1 0 5, and layer thickness 50 nm by p - type A 1 〇. i. G a 〇. 9 〇N into the upper cladding layer 106 to complete the pn junction DH structure of the light-emitting portion on the surface of the aforementioned upper cladding layer 106, and then stack P-type GaN layer (layer degree = 80 nm) to act as The formation of the stacked structure 1 is completed by the contact layer 107. In a portion of the aforementioned P-type contact layer 107, a p-type ohmic electrode 108 is formed using a gold (φ). nickel oxide (NiO) alloy. The layer existing in the region designated for the electrode 109 configuration, such as the lower cladding layer 104 and the light-emitting layer 105, is removed by a via etching means, and the n-type ohmic electrode 109 is formed on the surface of the exposed type GaN layer 103. . As a result, the LED 1 is formed. The LED 1 luminescent properties were tested by flowing a 20 mA device operating current through the forward direction between the p-type and the η-type ohmic electrodes 108 and 109. The main wavelength of light emitted by LED 1 is about 460 Naru. The radiance of the wafer in this state was about 1.6 candelas. Since the group III nitride semiconductor layer superior to the crystalline layer can be provided with the group III nitride half layers 104 to 106 constituting the light-emitting portion of the p-n junction DH structure and the η-type ohmic layer on the hexagonal BP layer. The n-type GaN 103 of the electrode 109 is formed, and when the reverse current is fixed at 10 microamperes, the reverse electric current exhibits a high order of more than 15 volts. Further, since the group III nitride conductor layer is excellent in crystallinity, local breakdown is hardly observed. Example 2 -56- Hair-shaped 〇-shaped Au-shaped η - 完 的 结 配 配 层压 ( ( 54 54 54 54 54 54 54 54 54 54 54 54 54 54 54 54 54 54 54 54 54 54 54 54 54 54 54 54 54 54 54 54 54 54 54 54 54 54 The case of constructing a compound semiconductor LED with a hexagonal monomer BP layer disposed on the other is explicitly explained as an example. Fig. 8 schematically illustrates an LED planar structure suitable for the second embodiment. Then, Fig. 9 is a schematic cross-sectional view taken along the dotted line IX-IX of the LED 1. The stack structure 1 for manufacturing the LED 1 is used as a substrate 1〇1 using a sapphire substrate having a (1.1.-2.0.) crystal plane serving as its facet.

form. On the surface of the substrate 101, an undoped η-type hexagonal monomer BP layer having a thickness of about 290 nm was formed by ordinary MOCVD method, and the composition of the hexagonal monomer was shown by ordinary enthalpy analysis. The (〇.〇.0.1.) crystal plane of the ruthenium layer 102 is arranged in a state of several ¥ parallel to the surface of the sapphire substrate 101. Specifically, the hexagonal monomer is found from the lattice plane spacing of the (〇.0.0.:[.) crystal plane arranged in an almost parallel manner perpendicular to the C-axis direction of the hexagonal unit lattice. Layer 102 has a c-axis length of 0.524 nm. Furthermore, the presence of twins is almost unresolved in the hexagonal unitary germanium layer 102 as observed by the cross-section technique. In the region of the hexagonal monomer layer which is about 50 nm above the interface with the sapphire substrate 1〇1, it is confirmed that the (〇.〇.0.1.) crystal planes are regularly arranged in an almost parallel manner, and it is found at the same time This lattice arrangement has almost no distinguishable slip. Growth of bismuth (Ge)-57-(55) 1310247 bauxite on the surface of a hexagonal monomer layer 102 having a (0.0.〇·1.) crystal plane aligned parallel to the thickness of the layer. Type hexagonal GaN layer 103 (layer thickness = 丨 9 〇〇 nanometer). According to analysis by ordinary TEM, it was found that the η-type GaN layer 103 grown on the hexagonal monomer BP layer 102 as the underlayer is arranged in a (0.0.0.1 .) crystal plane parallel to the hexagonal monomer BP layer 102. (〇· 〇. 〇. 1 .) Single crystal face • Crystal layer. There are almost no twins and crystal defects in the inner region of the hexagonal GaN layer 103. On the (1.1.-2.0.) surface of the hexagonal η-type GaN layer 103, the lower cladding layer 1〇4 (layer thickness) formed of hexagonal η-type AlQ.15Ga〇.85N is stacked in the following order. =250 nm), a light-emitting layer 105 of a multi-quantum well structure consisting of 7 cycles of Ga〇.85In〇.15N well layer and AU.fnGao.^N barrier layer, respectively, and having a thickness of 25 nm and The light-emitting portion of the pn junction DH structure is completed by the upper cladding layer 106 formed of p-type AluoGao.goN. The entire light-emitting portion is a single crystal layer having a (〇·〇.〇· 1.) crystal plane arranged parallel to the (〇.〇.0.1.) crystal plane of the hexagonal monomer BP layer 102. Twinning and stacking defects are hardly visible in the inner region of the entire light-emitting portion. The stacked structure 100 is completed by further arranging a p-type GaN layer (layer thickness = 75 nm) on the surface of the upper cladding layer 106. In a portion of the aforementioned P-type contact layer 107, a P-type ohmic electrode I 08 is formed using a gold-nickel-oxide alloy. The layer existing in the region designated for the electrode 1 〇9 configuration, such as the lower cladding layer 104 and the light-emitting layer 1〇5, is removed by dry etching, and the exposed η-type GaN layer 103 is formed on the surface. N-type ohmic electrode 109. As a result, the completion of the LED 1 ° was tested by flowing a 20 mA device operating current according to the forward direction between the P-type and the η-type ohm-58 - ^ (56) 1310247 electrodes 108 and 109. Luminous nature. The main wavelength of the light emitted by the LED 1 is about 45 5 nm. The radiance of the wafer in this state was about 1.5 candelas. Since the ohmic electrodes 108 and 109 are arranged in the vertical direction of the stacked structure 100 traversing the light-emitting portion so that the device operating current can be parallel to the bismuth nitride semiconductor layer 1 〇 4 constituting the light-emitting portion of the P-n junction DH structure. The (0·0.0.1.) crystal plane flow to 106, and the forward (at 20 mA) voltage is φ, which is, for example, a low level of 3.2 volts. Meanwhile, since the light-emitting portion can be formed of a bismuth nitride semiconductor layer destined to be superior to crystallinity disposed on the hexagonal BP layer, the reverse voltage obtained when the reverse current is fixed at 1 〇 microamperes exhibits more than 15 volts. High quality. Since the group III nitride semiconductor layer constituting the light-emitting portion is excellent in crystallinity, local breakdown is hardly observed. Embodiment 3 The present invention will cite a GaN layer having a (1 · 1 · - 2.0 ·) crystal plane serving as a surface thereof and a hexagonal surface bonded to the surface and having a (1.1.-2.0.) crystal plane serving as a surface thereof The case where the compound semiconductor LED is constructed by the stacked structure provided by the monomer Bp layer is explicitly explained as an example. The first plan schematically illustrates the planar structure of the LED 1 suitable for the third embodiment. Fig. 1 is a schematic cross-sectional view showing the LED 1 taken along the dotted line XI-XI of Fig. 10. Make the stack structure of the LED 1! The lanthanum is formed using a sapphire (-59-(57) 1310247 α-alumina single crystal) having a 0.2.) crystal plane (commonly referred to as an R-plane) serving as a surface thereof as a substrate. On the surface of the (1.-1.0.2.) crystal plane of the substrate 101, an undoped layer having a (1.1.-2.0.) crystal plane serving as a surface thereof is formed by using a conventional hydrazine method. The η-type GaN layer 103. The dislocation density in the GaN layer 103 (layer thickness = 1200 nm) was measured by ordinary section ΤΕΜ to be about 2 x 10 9 cm·2. On the surface formed by the (1.1.-2.0.) crystal plane of the GaN layer 103, an undoped n-type monomer BP layer 102A (thickness of about 280 nm) was grown. As a result, the GaN layer 103 and the BP layer 102A form the first stacked structural portion 102A designed in accordance with the present invention. According to ordinary electron diffraction analysis by TEM, the BP layer 102A was found to have a wurtzite-type single crystal layer having a (1.1.-2.0.) crystal plane serving as its surface. In the electron diffraction image of the BP layer 102A, additional diffraction or diffusion scattering caused by twinning or stacking defects cannot be seen. Further, by cross-sectional TEM analysis, it is confirmed that the dislocations contained in the GaN layer 103 are affected by the interface of the BP layer 102A, in other words, the interface of the first stacked structure portion 1 2 Ο A is suppressed and does not spread upward (toward Lu The BP layer 102A). On the (1.1.-2.0.) crystal plane of the hexagonal monomer BP layer 102, a hexagonal n-type GaN layer 102B (layer thickness = 600 nm) was further disposed. Therefore, the hexagonal BP layer 102A and the hexagonal GaN layer 102B form the second stacked structure portion 120B designed in accordance with the present invention. Since the hexagonal GaN layer 102B is disposed in such a manner as to be bonded to the hexagonal monomer BP layer 102A, the dislocation density measured by the ordinary cross-sectional TEM technique exhibits a low order of lxl 〇 4cnT2 or less. On the (1·1 _-2.0·) surface of the hexagonal GaN layer (58) 1310247 102B constituting the second stacked structure portion (120B), the layers are stacked in the following order: hexagonal n-type AlQ different in composition from GaN The lower cladding layer 1〇4 (layer thickness=300 nm) formed by .l5GaQ 85n is respectively composed of GaQ 88lnQ.12N well layer (layer thickness=3 nm)/AU.〇iGa〇.99N barrier layer ( Layer thickness = 1 nanometer) The light-emitting layer 105 of a multi-quantum well structure composed of 5 cycles, and the upper cladding layer having a thickness of 90 nm and formed of P-type AU.i〇GaQ.9()N 106 completes the light-emitting portion of the Pn junction DH structure. According to the ordinary TEM analysis, the cladding layer 104 to the upper cladding layer 106 which constitute the light-emitting portion of the p-n junction DH structure are respectively wurtzite-type hexagonal single crystal layers. Further, the light-emitting portion can be formed of a group III nitride semiconductor layer which is particularly superior to crystallinity because it is disposed on the GaN layer 102B which contains only a small amount of dislocations and is excellent in crystallinity. On the surface of the upper cladding layer 1〇6 described above, a p-type GaN layer (layer thickness = 90 nm) was further disposed as the contact layer 107 to complete the formation of the stacked structure 1?. In a portion of the above-mentioned P-type contact layer 1?7, a P-type ohmic electrode is formed by a gold-nickel oxide alloy. On the surface of the lower cladding layer 104 exposed by removing the layer existing in the region designated for the n-type ohmic electrode 1〇9, for example, the light-emitting layer 1〇5' on the lower cladding layer 104 An n-type ohmic electrode 1〇9 is formed. As a result, the LED 1 is completed. The luminescent properties of the LED 1 were tested by flowing a 20 mA device operating current in the forward direction between the P-type and the η-type ohmic electrodes 108 and 109. The main wavelength of light emitted by LED 1 is about 450 nm. The radiance of the wafer in this state is about 1.7 candle. Due to the formation of the

-61 - (S (59) 1310247 Effect of the lower cladding layer 104, the light-emitting layer 105, and the group III nitride semiconductor constituting the upper cladding layer 106 of the p-n junction portion, reverse voltage (when the reverse current is fixed At 10, it is now in the high order of more than 15 volts. Next, since the crystal structure of the Zn junction surface DH structure constituting i 1 〇 2 配置 and the other is excellent in crystallinity, it is almost seen that the present invention will be The case of using a compound semiconductor FET provided by a .GaN layer having a surface serving as a surface thereof and a hexagonal monomer BP layer bonded to the surface and having a surface of 1.1.-2.〇.) is exemplified as an example. Fig. 12 schematically illustrates a schematic cross-sectional view of a high frequency FET 3 suitable for the embodiment 4. The fabrication of the FEt 3 is used to have a surface (1.-1.0.2.). Plane) sapphire (α-alumina single crystal) as a base; An undoped n-type GaN layer 302 having a high impedance of a surface serving as a surface thereof is formed on the surface of the (1.-1.〇.2.) crystal plane of the substrate 301 by a conventional method. The GaN layer 302 was measured by TEM (layer thickness = 1 〇〇〇 density was about 3xl09cirT2. The high-impedance undoped p-type single was grown in the (1. 1 .-2.0.) crystal plane of the GaN layer 302 The bulk BP layer 303 (when the DH structure light-emitting layer has excellent crystallinity), the group III of the η-type GaN layer does not have a partial breakdown [l_l.-2.0_) crystal as its surface (stack structure construction) GaN-based: the dislocation of the desired crystal face (commonly known as R- 3 3 01 and formed on the ,, by using (1 · 1 · - 2.0 ·) crystal by ordinary cross section ^ m) On the surface of the crucible, the thickness is about 200 Na-62 - (60) 1310247 m). As a result, the GaN layer 3〇2 and the BP layer 303 form the first stacked structure portion 320A designed in accordance with the present invention. The BP layer 303 was found to have a wurtzite-type single crystal layer having a (1.1.-2.0.) crystal plane serving as a surface thereof by ordinary electron diffraction analysis using TEM. In the electron diffraction image of the BP layer 303, no additional diffraction or diffusion scattering due to twinning or stacking defects can be seen. Furthermore, it is confirmed by the cross-sectional TEM analysis that the dislocations contained in the GaN layer 302 are subjected to the interface of the BP layer 303, in other words, the interface of the φ-stack structure portion 320A is suppressed without being spread upward (to The BP layer 3 03 ). On the (1.1.-2.0.) crystal plane of the hexagonal monomer BP layer 303, an undoped hexagonal n-type GaN layer (layer thickness = 110 nm) serving as the electron transport layer 304 was further disposed. As a result, the hexagonal BP layer 103 and the hexagonal GaN layer constituting the electron transport layer 3〇4 form the second stacked structure portion 32B designed in accordance with the present invention. Since the electron transport layer 304 is disposed in such a manner as to be bonded to the hexagonal monomer BP layer 303, the electron transport layer 430 can be formed of a crystal layer of excellent quality having a dislocation density of lx10 4 cm 2 . On the (1.1.-2.0.) surface of the electron transport layer 304 formed of the hexagonal n-type GaN layer and constituting the second stacked structure portion 320B, a hexagonal n-type AlQ different in composition from GaN is disposed in a bonding manner .25GaQ.75N (layer thickness = 25 nm) formed by the electron supply layer 3〇5. The electron supply layer 305 is further provided by a contact layer 306 formed of an n-type GaN layer to complete the formation of the stacked structure 300 for the FET. The electron transport layer 3〇4 can be formed of a n-type nitride semi-63-(61) 1310247 conductor layer superior to crystallinity because it is disposed in a crystal containing a small density and a stacking defect and is superior to crystallinity. Six. Square BP layer 3 03. Since the electron supply layer 3〇5 is disposed so as to be bonded to the electron transport layer 304 having excellent crystallinity, it is found by ordinary TEM analysis that the electron supply layer 305 is a single crystal layer having excellent crystallinity. A Schottky gate 3 07 is formed on the surface of the electron supply layer 305 exposed by removing a portion of the contact layer 306 via a conventional dry etching technique. Remaining • An ohmic source 3 08 and an ohmic drain 3 09 formed of a rare earth element-aluminum alloy are formed on the surface of the GaN 3 06 contact layer on the opposite side of the gate 3 07 to complete the FET 3. The FET of the present invention can be embodied as a GaN-based FET excellent in power properties and capable of using high-frequency power because it is formed by using a hexagonal monomer BP layer as a bottom layer and has excellent crystallinity with only a small density of dislocations. The GaN layer acts as an electron transport layer, and because it exhibits large transconductivity and suppresses leakage of current via dislocations. Further, since the FET system is formed using a hexagonal monomer BP layer having excellent crystallinity, a GaN electron transport layer, and a GaN electron supply layer, there is almost no sign of localized breakdown that is distinguishable. [Embodiment 5] The content of the present invention will be explicitly explained by taking the case where a sapphire block crystal is used as a hexagonal single crystal and a compound semiconductor LED is constructed using a hexagonal monomer BP layer disposed thereon. Figure 14 is a schematic illustration of the LED plane -64-(62) 1310247 structure suitable for this embodiment 5. Then, Fig. 15 is a schematic cross-sectional view taken along the dotted line XV-XV of Fig. 14 for exemplifying the LED 1. The stack structure 1 used for the manufacture of the LED 1 is used as a substrate 1〇1, having a sapphire (aluminum surface (referred to as R_plane) serving as a surface of the surface (1._1.0_-2.)). A single crystal) substrate is formed. On the surface of the substrate 101, an η-type hexagonal GaN layer 103 层 having a layer thickness of about 32 Å for a single crystal form of the underlayer is formed by a conventional MOCVD method. The surface of the hexagonal GaN layer 1〇3-8 is resolved into a (ΐ·ΐ._2.〇·) crystal plane by ordinary electron diffraction analysis. Further, the surface alignment of the (〇·〇·〇_ι_) crystal plane constituting the hexagonal GaN layer 103A perpendicular to the (ino) crystal plane was observed by ordinary fragment ΤΕΜ technique. On the surface formed by the (1 · 1 _ - 2.0 . ) crystal plane of the hexagonal GaN layer 103A, an undoped n-type hexagonal monomer BP layer 102 is grown. The hexagonal germanium layer 102 is grown at 78 (TC) by ordinary atmospheric pressure MOCVD method. It is shown by ordinary cross-sectional TEM technology that the hexagonal BP layer is _2 _ by (1·1·-2·0. The crystal plane is bonded to the hexagonal GaN layer 103A and has a (1.1.-2·0.) crystal plane serving as a surface thereof, and constitutes a (0.0.0.1.) crystal plane inside the hexagonal BP layer 102 and the (1.1. -2.0.) The crystal faces are arranged vertically in an almost parallel relationship. Next, by observing the dark field image according to the segment ΤΕΜ technique, almost no hexagonal 具有 having a (1.1.-2.0.) crystal plane serving as its surface can be distinguished. There is an inversion boundary in layer 102. Furthermore, in the electron diffraction pattern of the hexagonal germanium layer 102, no additional diffraction points indicating the presence of twins and streaks are visible. -65- (63) 1310247 Growth of doped germanium (Ge) on the surface of a hexagonal monomer BP layer 102 having (0 · 0.0 · 1 ·) crystal planes aligned in a direction parallel to the thickness of the added layer Wurtzite-type hexagonal η-type GaN layer 1〇3Β (layer thickness = 160 nm). By using ordinary TEM analysis, the length is determined as the bottom layer The n-type GaN layer 103B on the monomer BP layer 102 is a single crystal layer having a (0.0_0_1_) crystal plane aligned parallel to the (0.0.0.1·) crystal plane of the hexagonal monomer BP layer 102. φ The n-type GaN layer 103B is bonded to the hexagonal monomer BP layer 102 via the (1_1.-2.0.) crystal plane and has a 2.0.) crystal plane serving as its surface, and constitutes the inside of the η-type GaN layer 103B (晶_〇_〇·1·) The crystal faces are arranged vertically in a nearly parallel relationship with the (1.1.-2.0.) crystal faces. Furthermore, by ordinary TEM analysis, it is almost impossible to distinguish that the hexagonal GaN layer 103B has reversed phase boundaries, twinning, and stacking defects. On the (1 · 1 .-2.0.) surface of the hexagonal n-type GaN layer 1300B, a lower cladding layer 104 formed of hexagonal η-type Al^sGamN is stacked in the following order (layer thickness = 250 nm) m), a light-emitting layer 105 of a multi-quantum well structure consisting of 5 cycles of Ga〇.85ln〇.15N well layer and Al〇.G1GaG.9 9N barrier layer, respectively, and having a thickness of 50 nm and consisting of P The upper cladding layer 6 formed of -type Alo.ioGao.9oN is formed into a light-emitting portion of the p-η junction DH structure. The stacked structure 100 is completed by further arranging a Ρ-type GaN layer (layer thickness = 8 Å nm) serving as the contact layer 1 〇 7 on the surface of the above upper cladding layer 106. In a portion of the above-described P - -type contact layer 107, a P-type ohmic electrode 108 is formed of a gold ( Au ) - nickel oxide (NiO ) alloy. The layer present in the region designated for the electrode 109 configuration, such as the lower cladding layer i〇4 and the light-emitting layer 105, is removed by a dry lithography technique via -66-(64) 1310247, and the exposed η- An n-type ohmic electrode 1〇9 is formed on the surface of the type GaN layer 103B. As a result, the LED 1 is completed. The luminescent properties of the LED 1 were tested by flowing a 20 mA device operating current in the direction of advancement between the p-type and n-type ohmic electrodes 108 and 109. The main wavelength of light emitted by LED 1 is about 460 nm. The radiance of the wafer in this state was about 1.6 candelas. The lower cladding layer 104 to the upper cladding layer 106 and the light-emitting portion constituting the pn junction surface DH are formed on the hexagonal BP layer 102 and the n-type GaN layer 103 which are hardly aware of the distinguishable inversion boundary, twinning and stacking defects. The n-type ohmic electrode is 09, so they can form a group III nitride semiconductor layer superior to the crystallinity. Therefore, the light-emitting layer 105 emits light having no uniform uniform intensity. Embodiment 6 The content of the present invention will be exemplified by the case of constructing an LED by using a hexagonal germanium layer disposed on a GaN layer having a (1.0.-1.0.) crystal plane serving as a surface thereof as a hexagonal single crystal. Explain clearly. Fig. 16 schematically illustrates the LED 1 planar structure suitable for this embodiment 6. Then, Fig. 17 is a schematic cross-sectional view showing the LED taken along the dotted line XVII-XVII of Fig. 16. The GaN layer 103A having a (1·0·_1·0·) crystal plane serving as a surface thereof is formed on the surface formed by the (〇〇1) crystal plane of the LiA1 02 bulk single crystal substrate 110 by ordinary MBE The law is formed. By ordinary cross-sectional TEM analysis 'display-67-(65) 1310247 The (〇·〇·0·1·) crystal plane is perpendicular to the n-type hexagonal G aN layer with a thickness of 480 nm. 1 0 3 Α The surface arrangement of the inner (1. 〇. _ ; [ . 〇.) crystal faces. On the surface of the (i·0·-1.0.) crystal plane of the hexagonal GaN layer 103A formed by the single crystal underlayer, an undoped η-type hexagonal monomer phosphorus boride (germanium) layer is grown. 2. The hexagonal layer 1〇2 was grown at 800 ° C by a normal atmospheric pressure MOCVD method. By means of the ordinary section ΤΕΜ technical view - Rucha, it is shown that the hexagonal BP layer 102 is bonded to the hexagonal GaN layer 103A via a (1.0._1.〇.) crystal plane and has a surface (1.0.-1.0.) serving as its surface. The crystal plane, and the (0.0.0.1.) crystal plane constituting the inside of the hexagonal BP layer 102 is vertically arranged in a nearly parallel relationship with the (1·0 · -1 · 0 ·) crystal plane. By observing the dark field image according to the cross-sectional TEM technique, it is almost impossible to distinguish that there is an inversion boundary in the hexagonal BP layer 102 having a (1.0.-1.0.) crystal plane serving as its surface. Furthermore, in the electron diffraction pattern of the hexagonal BP layer 102, additional dots indicating the presence of twins and streaks are not visible, and the twins and φ stripes indicate the presence of stacking defects. Growth of a yttrium-doped (zinc-doped) wurtzite-type hexagonal η-type GaN layer on the surface of a hexagonal monomer BP layer 102 having a (0.0 · 0 · 1 .) crystal plane aligned in a direction parallel to the thickness of the layer to be increased 103 B (layer thickness = 17 〇 nanometer). By using ordinary TEM analysis, it was found that the η-type GaN layer 103B grown on the hexagonal monomer BP layer 102 as the underlayer is arranged to have a (0.0.0.1·) crystal plane parallel to the hexagonal monomer BP layer 102. (0.0.0.1·) A single crystal layer of crystal faces. It is shown that the η-type GaN layer 1 0 3 B is bonded to the hexagonal monomer BP layer 102 via the (1. 1. - 1 · 〇.) crystal-68-(66) 1310247 surface and has a surface serving as its surface. (io_LO.) crystal plane, and the (oooi) crystal plane constituting the inside of the η-type GaN layer 103B is vertically arranged in a nearly parallel relationship with the (1·0 . -1 _ 0 ·) crystal plane. Furthermore, by ordinary TEM analysis, it is almost impossible to distinguish that the hexagonal GaN layer 103B has reversed phase boundaries, twinning, and stacking defects. On the surface of the surface formed by the (1.0.-1.0.) crystal plane of the hexagonal GaN layer 103B, the inversion boundary, twinning, and stacking defects are hardly discernible, and are stacked in the following order as described in Embodiment 5. The lower cladding layer 104, the light-emitting layer 105, and the upper cladding layer 106 formed in the structure form a light-emitting portion of the pn junction surface DH structure. Next, on the upper cladding layer 106 constituting the uppermost layer of the light-emitting portion, the same contact layer 107 as described in Embodiment 5 is disposed in a bonding manner to complete the formation of the desired stacked structure 1 of the LED 1. . The P-type and n-type ohmic electrodes 108 and 109 are formed on the stacked structure 100 by the same means as described in the foregoing embodiment 5 to form the LED 1 . The luminescent properties of the LED 1 were tested by flowing a 20 mA device operating current in the forward direction between the p-type and the n-type ohmic electrodes 108 and 109. The main wavelength of light emitted by the LED 1 is about 460 nm. The radiance of the wafer in this state was about 1.6 candelas. The lower cladding layer 〇4 to the upper cladding layer 106 and the pn junction surface DH structure are formed on the hexagonal BP layer 102 and the η-type GaN layer 103, which have almost no distinguishable resolvable inversion boundary, twinning and stacking defects. The n-type ohmic electrode of the light-emitting portion is 09, so they can form a bismuth nitride semiconductor superior to crystallinity-69 - (67) (67)

1310247 layers. Therefore, the light-emitting layer 105 emits uniform uneven intensity light without light unevenness. Embodiment 7 The present invention will be exemplified by a case where a sapphire bulk crystal is used as a hexagonal square and is constructed using a hexagonal single crystal monomer BP layer formed on the surface. Explain clearly. Fig. 19 is a schematic diagram showing the structure of the LED 1 relating to Embodiment 7. Then, Fig. 20 is a schematic cross-sectional view showing the compound semiconductor LED 1 taken along the broken line XX-XX of Fig. 19. The desired stacked structure 100 for fabricating the LED 1 is formed on a (1.1.-2.0.) crystal plane (commonly referred to as an A-plane) having a surface thereof and as a sapphire (α-alumina single crystal) of 101. Before the hexagonal phosphating base semiconductor layer 102 is formed on the surface of the substrate 101, the substance adsorbed on the surface of the substrate 101 is desorbed and the surface is cleaned at about 0.01 atm in a conventional decompression MOCVD apparatus. The sapphire substrate 101 is heated to 1200 ° C. Next, on the cleaned surface of the sapphire substrate 101, an undoped n-type hexagonal monomer BP layer having a layer thickness of about 490 nm as a hexagonal phosphide-based semiconductor layer is formed by a reduced pressure MOCVD method. . It was confirmed by ordinary enthalpy analysis that the crystal plane of the hexagonal monomer layer 102 0·0.0.2.) was vertically aligned with the clean surface of the sapphire substrate 1〇1 in parallel relationship. The number of (0.0.0·2.) crystal faces of the hexagonal BP arranged at a pitch equal to the length of the c-axis of the sapphire substrate 1 〇i is 6, which is the r single crystal shown in the invention. The LED planar device has a substrate-filled boron for the purpose of the general purpose of the space ^ 102 (on the surface of the L 102

S -70 - ^6° (68) 1310247 & externally, the presence of twins in the hexagonal monomer BP layer 102 can hardly be resolved by observation of the cross-sectional TEM technique and electron diffraction means. Further, in the region of the inside of the hexagonal monomer BP layer 102 which is about 30 nm from the interface with the sapphire substrate 101, it was found that the arrangement of the (mi) crystal faces was hardly discernible. It is confirmed that the (〇.〇. 0·2.) crystal faces are regularly arranged in an almost parallel relationship. On the surface of the hexagonal monomer BP layer 102 having a sinusoidal plane arranged in a direction parallel to the thickness of the layer to be grown, a yttrium-doped (Ge)-doped bauxite-type hexagonal η- The GaN layer 103 (layer thickness = 1900 nm) is a hexagonal group III nitride semiconductor layer. Using the analysis of ordinary TEM, it was found that the n-type GaN layer 103 grown with the hexagonal monomer BP layer 102 serving as the underlayer was arranged to have a (0.0.0.2.) crystal plane parallel to the hexagonal monomer BP layer 102 (0.0.0). _ 1 ·) Single crystal layer of crystal face. Next, in the inner region of the hexagonal GaN layer 103, twinning and stacking defects are hardly seen. On the (1·1·-2.0.) surface of the hexagonal η-type GaN layer 103, the lower cladding layer 104 formed of hexagonal η-type Alo.^GamN is stacked in the following order (layer thickness=150 nm) m), the luminescent layer 105 of a multi-quantum well structure consisting of 5 cycles of Gamlno.uN well layer and Alo.fnGao.99N barrier layer, respectively, and ρ-type AU.MGao. The upper cladding layer 1〇6 formed by 9oN is formed into a light-emitting portion of the p-η junction DH structure. The formation of the stacked structure 100 is completed by further stacking a p-type GaN layer (layer thickness = 80 nm) on the surface of the upper cladding layer 1 充当 6 as the contact layer 107. In the region of some of the above P-type contact layers 107, gold is used (Au

(S-71 - (69) 1310247). A nickel oxide (NiO) alloy forms a P-type ohmic electrode 108. The layer present in the region designated for the electrode 109 configuration, such as the lower cladding layer 104 and the light-emitting layer 105, is removed by dry etching, and the exposed n-type GaN layer 103 is formed with n-type ohms on the surface. Electrode 109. As a result, the LED 1 is completed. The Lu light-emitting property of the LED 1 was tested by flowing a 20 mA device operating current in the forward direction between the p-type and the n-type ohmic electrodes 108 and 109. The main wavelength of light emitted by the LED 1 is about 460 nm. The radiance of the wafer in this state is about 1.8 candles. Since the bismuth nitride semiconductor layer superior to the crystalline layer can be disposed on the hexagonal BP layer 1〇2, the lower cladding layer 104 to the upper cladding layer 106 and the η- constituting the light emitting portion of the pn junction DH structure can be disposed. The n-type GaN layer 103 of the type ohmic electrode 109 is formed, and when the reverse current is fixed at 10 microamperes, the reverse voltage exhibits a high order of more than 15 volts. Further, since the crystallinity of the group III nitride semiconductor layer is excellent, partial breakdown is hardly observed in the LED 1 thus produced. [Embodiment 8] The present invention will exemplify a case where an ohmic electrode is provided on a hexagonal monomer BP layer which is bonded to a (1·1.-2·0) crystal plane of a sapphire block to construct a compound semiconductor device LED. Explain clearly. Fig. 21 schematically illustrates the planar structure of the LED 1 relating to Embodiment 8. Then, Fig. 22 is a schematic cross-sectional view showing the compound semiconductor device LED 1 taken along the broken line XXII-XXII of Fig. 21. -72- (70) 1310247 Manufacture of the LED 1 The desired stack structure 100 uses sapphire (α-alumina single crystal) having a (1.1.-2·〇·) crystal plane (commonly called A-plane) serving as its surface. ) formed as the substrate 101. On the surface of the (1·1.-2·0·) crystal plane of the substrate 101, an undoped layer having a (1.1.-2.0.) crystal plane serving as a surface thereof was formed at 750 ° C by a conventional MOCVD method. A heterogeneous η-type hexagonal monomer BP layer (layer thickness of 2000 nm). The carrier concentration of the η-type BP layer 102 was determined to be 2xl019cnT3. • On the surface formed by the (1·1··2·0·) crystal plane of the hexagonal η-type GaN layer 1〇3, an undoped n-type hexagonal GaN layer 103 is grown (layer thickness = 1200 nm) ). Using the analysis of ordinary TEM, it was found that the hexagonal monomer BP layer 102 contained a small density of twin crystals and stacked defects of less than lxl04cirT2. Since the hexagonal G aN layer 103 is disposed in such a manner as to be bonded to the hexagonal monomer BP layer 102 superior in crystallinity, twinning and stacking defects are hardly observed in the hexagonal GaN layer 103. On the (1.1·-2·0·) surface of the hexagonal η-type GaN layer 1〇3, a lower cladding layer formed of hexagonal η-type Α1〇.150&().85Ν is stacked in the following order. 1〇4 (layer thickness = 280 nm), respectively, by GaQ.85InQ.15N well layer (layer thickness = 3 nm) / Alo.tnGao.^N barrier layer (layer thickness = 8 nm) 5 The luminescent layer 1〇5 of the quantum well structure composed of cycles and the luminescence of the pn junction DH structure is formed by the upper cladding layer 1〇6 formed by the p-type Alo.MGao.9oN layer thickness of 85 nm. section. Further, a P-type GaN layer (layer thickness = 80 nm) is further stacked on the surface of the upper cladding layer 106 to serve as the contact layer 107, and the formation of the stacked structure 1 is completed. In the region of some of the above P-type contact layers 107, formed by gold (-73-(71) 1310247

Au) - ρ-type ohmic electrode 108 formed of yttrium oxide (NiO) alloy. Formed on the surface of the hexagonal n-type germanium layer 102 exposed by the dry etching means to remove the layers 103 to 107 present above the hexagonal n-type germanium layer 102 in the region designated for the configuration of the n-type ohmic electrode 109 The η-type ohmic electrode is 1〇9. The η-type ohmic electrode 109 is formed of a gold (Au)-germanium (Ge) alloy layer (90% by weight of gold and 10% by weight of bismuth alloy) obtained by a conventional vacuum deposition method. The luminescent properties of the L E D 1 were tested by flowing a 20 mA device operating current in the forward direction between the ρ-type and the η-type ohmic electrodes 1 0 8 and 1 0 9 . The main wavelength of light emitted by the LED 1 is about 460 nm. The radiance of the wafer in this state is about 1.6 light. Since the NMOS-based nitride semiconductor layers 104 to 106 and the η-type ohmic electrode 109 constituting the light-emitting portion of the pn junction DH structure are disposed on the hexagonal BP layer 102 superior to the crystallinity, the reverse voltage (when the reverse current is fixed at At 10 microamperes, it exhibits a high level of more than 15 volts. Further, the partial breakdown is hardly observed. In the present invention, the case where the compound semiconductor device LED is constructed by arranging the n-type and P-type ohmic electrodes on the η-type and ρ-type hexagonal monomer BP layers is The examples are clearly explained. Fig. 23 schematically illustrates the planar structure of the LED 2 relating to Embodiment 9. Then, Fig. 24 is a schematic cross-sectional view showing the LED 2 taken along the dashed line XXIV-XXIV of Fig. 23. -74- (72) 1310247 The desired stacked structure of the LED 2 is formed as described in the foregoing embodiment 8, and is formed on a (1.1.-2.0) crystal plane serving as its surface (commonly referred to as a Α-plane) The sapphire (α-alumina single crystal) is formed as the substrate 201. On the surface of the (1·1 .-2.0.) crystal plane of the substrate 201, the same method as described in the foregoing Example 8 was used to form a surface having a surface serving as a surface at 750 t by ordinary MOCVD method (1.1.-2.0). .) The undoped n-type hexagonal monomer BP layer 202 (layer thickness = 2 〇〇〇 nanometer) H of the crystal face. The carrier concentration of the η-type ruthenium layer 202 was determined to be 2xl 〇 19cnT3. Using ordinary TEM analysis, it was found that the hexagonal monomer BP layer 202 contained a small density of twins and stack defects smaller than lxl 04cnT2. On the surface formed by the (1.1.-2.0.) crystal plane of the hexagonal BP layer 202, an undoped n-type GaN layer 203 (layer thickness = 1200 nm) is stacked in the following order, having a surface serving as its surface The lower cladding layer 204 (layer thickness = 280 nm) formed by the hexagonal η-type Al 〇..15GaG.85N of the (1.L-2.0.) crystal plane, respectively, is from Ga〇.85ln〇.15N well Layer (layer thickness = 3 nm) • /Al〇.Q1Ga().99N barrier layer (layer thickness = 8 nm) 5 layers of multi-quantum well structure luminescent layer 205, and layer thickness 85 奈The upper cladding layer 206 formed of P-type AlmGao.MN is used to form a light-emitting portion of the pn junction DH structure. On the surface of the hexagonal n-type upper cladding layer 206 having a (1.1.-2.0.) crystal plane serving as a surface thereof, a p-type hexagonal undoped monomer bp layer is deposited (layer thickness = 2 〇〇) Nano) acts as a contact layer 207. By observing the ordinary cross-section, the hexagonal undoped monomer layer constituting the contact layer 207 can hardly distinguish planar defects and dislocations such as twins and stack defects.

-75- (73) 1310247 In the central portion of the p-type contact layer 207, a P-type formed of a gold ( Au). zinc (Zn) alloy (an alloy of 95% by weight of gold and 5% by weight of zinc) is formed. The ohmic electrode 208 appears to form a circular planar shape. The surface of the hexagonal n-type germanium layer 202 exposed by removing the individual layers 203 to 20 7 existing above the hexagonal n-type germanium layer 202 in the region designated for the n-type ohmic electrode 209 by dry etching means The upper shape is a circular n-type ohmic electrode 209 in plan view. The η-type ohmic electrode 2〇9 is formed of a gold (Au)-germanium (Ge) alloy layer (90% by weight of gold and 10% by weight of bismuth alloy) obtained by a conventional vacuum deposition method. The hexagonal single is tested by flowing a 20 mA device operating current in a forward direction between the p-type and n-type ohmic electrodes 208 and 209 disposed on the hexagonal monomer BP layers 207 and 202, respectively. Body BP layers 207 and 2 〇2. The main wavelength of light emitted by the LED 2 is about 460 nm. The radiance of the wafer in this state was about 1.6 candelas. Since the NMOS nitride semiconductor layers 2〇4 to 206 and the ohmic electrodes 208 and 209' constituting the light-emitting portion of the pn junction DH structure are disposed on the hexagonal BP layers 202 and 207 superior to the crystallization, the reverse voltage is applied. When the current is fixed at 10 microamperes, it exhibits a high level of more than 18 volts. Again, there is almost no local breakdown. Embodiment 1 0 The present invention will construct an FET having a GaN bottom-76-(74) 1310247 by a Schottky gate and an ohmic contact electrode and a drain electrode disposed on a high-impedance η-type hexagonal monomer BP layer. The case is clearly explained as an example. Fig. 25 is a schematic view showing a schematic sectional structure of a GaN 3 which is suitable for the GaN of this embodiment. The stack structure 300 of the FET 3 is fabricated, as described in the foregoing Embodiment 8, formed on a (1.1.-2.0.) crystal plane (commonly referred to as an A-plane) serving as a surface thereof and serves as a substrate 3〇. 1 on sapphire (α-alumina single crystal). On the surface of the (1.1.-2.0.) crystal plane of the substrate 301, a high-impedance undoped hexagonal monomer BP layer 303 is formed by using a conventional MOCVD method at 10 ° C ° C. Thickness = 720 nm). The high-impedance undoped BP layer 303 has a carrier concentration of lxl 〇 17 cm·3. According to analysis by ordinary TEM, the BP layer 303 contains a small amount of twins and stack defects of less than ixi 〇 4 cm -2 . On the surface of the high-impedance BP layer 303, an electron transport layer 304 formed of an undoped hexagonal GaN layer (layer thickness = 48 nm) and having a surface serving as its surface (1.1·-2) are stacked in the following order. · 〇 ·) crystal face and electron supply layer 3 05 formed by hexagonal n-type ® AU.25GaG.75:N (layer thickness = 28 nm). Both the electron transport layer 304 and the electron supply layer 305 are formed by the MOCVD method. On the hexagonal η-type electron supply layer 305 having a (1·1·_2.〇·) crystal plane serving as a surface thereof, the Schottky is configured to deposit the gate 3 0 7 in a bonding manner. The contact forms the layer 310. The Schottky contact formation layer 310 is formed of a high-impedance hexagonal monomer BP having a layer thickness of 12 nm and a carrier concentration of less than 5 x 1016 cm·3. After the Schottky contact formation layer 310 is formed, the Schottky contact formation layer 3 10 is continuously left in the plane view.

(S-77-(75) 1310247 In the central region of the figure, in order to enable the Schottky gate 3 07 to be formed and to remove the Schottky contact present in the rest of the area via ordinary dry uranium engraving means The electrode is formed into a layer. Next, an n-type hexagonal monomer BP layer serving as the contact layer 306 (layer thickness = 100 nm and carrier concentration = 2 x 10 〇 19 cnT3) is stacked to cover the continuously remaining Schottky contact forming electrode 310 and exposed. The entire surface of the electron supply layer 305 around it. By ordinary cross-sectional TEM observation, the hexagonal monomer BP layer constituting the contact layer 306 can hardly distinguish planar defects such as twins and stack defects. Dislocation. Thereafter, for the purpose of depositing the gate 307, the contact layer 306 formed of the hexagonal n-type BP layer and covering the Schottky contact forming electrode 310 is removed by ordinary dry etching. The Schottky contact of the recess portion 330 exposed by the contact layer 306 is formed on the surface of the electrode 310, and the Schottky gate formed of titanium (Ti) is disposed by ordinary electron beam deposition means. Forming the contact layer 3 0 6 and dividing On the surface of one of the two independent portions of the hexagonal BP layer on the opposite side of the gate 3〇7, an ohmic contact electrode 3 0 8 is formed. Then, there are six sides on the opposite side of the gate 307. On the surface of the contact layer 306 formed by another independent portion of the BP layer, a drain 309 is disposed to complete the fabrication of the GaN-based FET 3. The ohmic electrode constituting the source 308 and the drain 309 is obtained by a conventional vacuum deposition method. A gold (Au)-germanium (Ge) alloy layer (95% by weight of gold and 5% by weight of an alloy of yttrium) is formed. Because of the ohmic electrodes, that is, the source 3 08 and the drain 3 09, both -78- ( 76) 1310247 is disposed on the contact layer 306 formed by the hexagonal monomer BP and contains only a small amount of twins and stacking defects, so it can solve the problem of encountering the drain current flowing into the short-circuit pattern' and as in the past experience in high-density crystallization. The source portion region and the opposite drain region disposed in the region of the defect are in a concentrated state. Therefore, it can be made to have a unique characteristic such that the device operating current can flow to the electron transport layer 304 at a uniform current density. Performance characteristics of FET 3. Furthermore, The Schottky gate 307 is adjacent to the Schottky contact layer formed by the high-impedance hexagonal monomer BP, which is almost free of twins and stacking defects, so that it can be made to show only insignificant Leakage current and GaN-based FET 3 of gate 307 exhibiting high breakdown voltage. Embodiment 1 1 The present invention will be directed to the construction of a compound semiconductor LED with a hexagonal monomer BP layer serving as a lower cladding layer. The case is explicitly explained as an example. Fig. 26 is a schematic plan view showing the schematic structure of the compound semiconductor LED 1 described in the embodiment. Then, Fig. 27 is a schematic cross-sectional view showing the LED 1 taken along the broken line XXVII-XX VII of Fig. 26. The stack structure 1 for the LED 1 is formed by using sapphire (ff-AhCh single crystal) as the substrate 101. On the surface formed by the (1·-1·0_2_) crystal plane of the substrate ι〇1 (commonly referred to as the R-plane), a layer thickness of about 8 μm is formed by ordinary decompression MOCVD method and has a surface serving as a surface thereof. (1.1.-2.0.) η-type GaN layer 103 of crystal face. On the surface formed by the (1.1.-2.0.) crystal plane of the η-type GaN layer 1〇3, a boron phosphide-based semiconductor formed of hexagonal undoped monomer BP

The -79- (77) 1310247 layer acts as the lower cladding layer 104, which is formed at 750 ° C by ordinary atmospheric pressure ( ) MOCVD. The semiconductor layer constituting the lower cladding layer has a layer thickness of about 29 nm and has a (1.1.-2·0.) crystal plane. Next, the conduction pattern of this layer is found to be about 2×101 by the ordinary electrolyte CV method. The ordinary TEM analysis shows that the lower GaN layer 103 is based on boron phosphide as the lower cladding layer 104. Summer heat to inhibit proliferation. On the (1.1, formed surface of the BP layer constituting the lower cladding layer, 5 layers respectively formed by stacking, that is, η-type GaQ.88 InQ.12N layer and η-type serving as a buffer layer are disposed. The luminescence formed by the quantum well structure obtained by the cycle is in the GaQ.88In〇.12N well layer of the multi-quantum well structure, and the Ga〇.88In〇.12N well layer of the lower cladding layer 104 of the square BP layer acts as its The surface of the (1.1. -2 · 〇.) crystal plane, so this well® is superior to the crystalline hexagonal single crystal layer. The well layer of the surface of the cladding layer 104 is almost indistinguishable by ordinary TEM. Through the (1.1.-2.0.) crystal plane bonding to the lower cladding, the crystal layer of the well layer is excellent, so that the higher layer layer and the GaQ.88InQ.12N well layer can be transformed into almost no crystal. a hexagonal single crystal layer. Further, both the well layer and the energy barrier layer constituting the multi-quantum well layer 105 are transformed into a (1 · 1 .-2.0·) crystal plane stack having a flat f cladding layer 104. (1. 1 hexagonal single crystal layer. At about atmospheric pressure, boron phosphide is the η-type of its surface and is 9 cm_3. Further, the boundary of the dislocation conductor layer contained. - 2.0.) crystal plane, When the well GaN layer, the group i layer 105. The layer is transformed into a precipitate for bonding to the hexadectic formation, and is bonded to the crystal. The surface of the layer 1 0 4] the GaN barrier contains twin crystals and the light structure of the excellent structure is formed. The lower .-2.0.) crystal plane-80-(78) 1310247 constitutes a multi-quantum well structure which can be composed of a hexagonal BP layer serving as a bottom layer and a hexagonal crystal defect containing only a small amount The group III nitride semiconductor layer is formed on the (1.1-2.0.) crystal plane of the n-type GaN layer of the outermost surface layer of the light-emitting layer, and is disposed as an upper cladding layer at 1080 ° C by a conventional decompression MOCVD method. 1〇6 p-type AU.15GaQ.85N layer. The upper cladding layer 106 is formed of a hexagonal Al〇.15Ga〇.85N layer having a carrier concentration of about 4xl017cnT3 and a layer thickness of about 90 nm. Therefore, the light-emitting portion of the p-n junction DH structure is composed of the BP layer, the light-emitting layer 1〇5, and the upper cladding layer 106 which constitute the lower cladding layer 1〇4. On the surface of Al〇.15Ga〇.85N which is formed on the (1.1.-2.0.) crystal plane of the upper cladding layer 106, the p-type serving as the contact layer 107 is disposed at 1050 ° C by a conventional decompression MOCVD method. GaN layer. The contact layer 107 is formed of a hexagonal GaN layer having a carrier concentration of about 1×10 18 cm −3 and a layer thickness of about 80 nm. After the contact layer 1?7 formed of the p-type GaN layer serves as the uppermost layer configuration and the formation of the stacked structure 1? is completed, a P-type ohmic electrode 108 is formed on one edge of the surface of the contact layer 107. The p-type ohmic electrode 108 is composed of gold and nickel oxide. The n-type ohmic electrode 119 is formed on the underlying cladding layer 104 of the semiconductor layer constituting the hexagonal phosphide boron which is exposed by the dry etching method. The n-type ohmic electrode 109 is composed of a gold-niobium alloy, and the LED is tested by flowing a current of 2 mA amps depending on the forward direction between the Ρ-type and the η-type ohmic electrodes 108 and 109. The luminescent properties of 1. The main wavelength of light emitted by LED 1 is about 450 nm -81 - (79) 1310247. The radiance of the wafer in this state was about 1.2 candelas. When the forward current is fixed at 20 mA, the forward voltage is about 3.5 volts. a light-emitting layer 105 reflecting a hexagonal phosphide-based bottom layer constituting the lower cladding layer 1〇4, a light-emitting layer 105 constituting a light-emitting portion of the ρ-η junction DH structure, and a group III nitride constituting the upper cladding layer 106 When the semiconductor layer is excellent in crystallinity, the reverse voltage exhibits a high order of more than 10 volts when the reverse current is fixed at 10 microamperes. Further, since the hexagonal phosphide-based layer of the hexagonal phosphide constituting the lower cladding layer 1 〇4 suppresses the dislocation from the η-type GaN layer 103 to the luminescent portion of the ρ-η junction DH structure, the obtained There is almost no partial breakdown seen in LED 1. Embodiment 1 2 The present invention will be described with a light-emitting portion having a hexagonal phosphide-based semiconductor layer formed of an upper and lower cladding layer and a light-emitting layer. The case of the LED is clarified as an example. Explain. © Figure 28 is a schematic illustration of the cross-sectional structure of L E D 1 described in Example 12. Similar reference numerals in Fig. 28 are indicated by constituent elements similar to those shown in Figs. 26 and 27. On the surface of the sapphire substrate 101, the n-type hexagonal GaN layer 103, the lower cladding layer 104 formed of the n-type hexagonal monomer BP layer, and the light-emitting layer 1 of the multi-quantum well structure are stacked in the order described in the foregoing embodiment 11. 〇 5. Since the light-emitting layer 105 has the lower cladding layer 104 formed of a semiconductor layer serving as a bottom layer of phosphide boron, it is finally composed of a hexagonal GalnN well layer containing a small amount of crystal defects such as twins and germanium. The aN barrier layer is formed.

-82- i S (80) 1310247 Next, the hexagonal p-type serving as the upper cladding layer 106 is configured by an ordinary M0CVD method on the energy barrier layer formed of the n-type hexagonal GaN layer constituting the uppermost surface layer of the light-emitting layer. A boron nitride-based semiconductor layer. The upper cladding layer 106 is composed of an undoped p-type hexagonal monomer BP layer. The upper cladding layer 106 has a layer thickness of about 250 nm and a carrier concentration of about 2 x 1019 cm_3. Next, the surface ' of the upper cladding layer 1' is formed like a (1.1.-2.0.) crystal plane as the surface of the barrier layer which constitutes the underlayer and is formed of a hexagonal GaN layer. • Since the p-type hexagonal monomer BP layer constituting the upper cladding layer 1〇6 has a forbidden band width of more than about +3.1 electron volts, the boron nitride-based semiconductor layer formed of hexagonal BP is used as the over cladding layer. The layer 106 and the η-type boron phosphide-based semiconductor layer 103 and the light-emitting layer 105 constitute a light-emitting portion of the Ρ-η junction DH structure. Since the hexagonal phosphide-based semiconductor layer constitutes the upper cladding layer 106 having a high carrier concentration, unlike the foregoing embodiment 11, the fabrication of the stacked structure 100 for the LED 1 does not require an over-the-top coating. Formation of layer 106 allows the P-type ohmic electrode 108 to deposit the desired contact layer. The P-type ohmic electrode 108', as exemplified in Fig. 28, is disposed in such a manner as to be directly bonded to the surface of the hexagonal P-type boron phosphide-based semiconductor layer. The n-type ohmic electrode 109' is as described in the foregoing embodiment i1, and is disposed under the semiconductor layer formed by the hexagonal η-type phosphide-bored semiconductor layer exposed by the ordinary dry uranium engraving method. On the surface of layer 104, LED 1 is fabricated. The LED 1 was tested by flowing a 20 mA device operating current in the forward direction between the p_ type and the n_ type ohmic electrodes 108 and 109.

-83- < S (81) 1310247 Luminescent properties. The main wavelength of light emitted by LED 1 is about 450 nm. The LED 1 generates a forward voltage of 3.3 volts when the forward current is fixed at 20 milliamps, which is lower than that of the LED 1 described in the foregoing embodiment 11, because the upper cladding layer 106 is high. A semiconductor layer having a carrier concentration and superior to crystalline hexagonal phosphide boron is formed. The radiance of the wafer in this state is about a high level of about 1.8 kW, since both the upper cladding layer and the lower cladding layer are composed of a hexagonal phosphide-based semiconductor layer. The hexagonal phosphide-based semiconductor layer covering the cladding layer 104 and the light-emitting portion constituting the lower cladding layer 104 and the pn junction DH structure, and the fine crystal of the group III nitride semiconductor layer constituting the light-emitting layer 156 are reflected. When the reverse current is fixed at 10 microamperes, the reverse voltage generated can reach a high level of more than 10 volts. Furthermore, since the hexagonal phosphide-based semiconductor layer as the lower cladding layer 104 suppresses the propagation of dislocations from the η-type GaN layer 103 to the luminescence portion of the pn junction DH structure, almost no LED 1 is obtained. Partial breakdown. INDUSTRIAL APPLICABILITY The compound semiconductor device of the present invention, as explained above, is a semiconductor layer based on boron phosphide formed on a hexagonal single crystal, formed on the single crystal, and formed on the boron phosphide-based a compound semiconductor device formed by a compound semiconductor formed on a semiconductor layer on a semiconductor layer, wherein the device is configured to have a surface formed by a (1.1.-2.0.) crystal plane disposed on the single crystal layer The boron phosphide is a bottom semiconductor layer. Therefore, the present invention is capable of forming only a small density such as twins and stacks

-84 - (82) 1310247 A semiconductor layer having a crystalline defect such as a defect and having excellent crystallinity as a base of phosphide. According to the present invention, the phosphide-based semiconductor layer can be made to contain only a small density of crystalline defects such as twins and stack defects, and has excellent crystallinity, so that the phosphide-borated substrate can be utilized. The semiconductor layer also provides a semiconductor device with different properties of the enhancement device. Then, the luminescence energy of the above-described structure is formed by a semiconductor material and a group III nitride semiconductor material which are based on Lu excellent quality phosphating boron containing only a small amount of reversed phase boundary, and thus provide a compound semiconductor excellent in optical properties and electrical properties. Apparatus and method of manufacturing the compound semiconductor device. Furthermore, the invention of the foregoing structure can provide a photoelectric conversion efficiency which can reduce the operating current leakage of the device, increase the photoelectric conversion efficiency serving as the light-emitting device, and also increase the reverse voltage, impart a high breakdown voltage of the field effect transistor and impart a drain current. A semiconductor device in which a phosphide boron nitride-based semiconductor layer is sandwiched. According to the invention of the foregoing configuration, the cladding layer constituting the light-emitting portion of the DH structure can be formed using a semiconductor layer containing only a small amount of crystalline defects and having excellent quality of phosphide as a base, and can provide substantially improved luminescent properties. Semiconductor light emitting device. Next, the invention of the foregoing structure is intended to form a hexagonal single crystal layer ' using a lanthanum nitride semiconductor and to provide a hexagonal group III nitride semiconductor having an (i.1.-2.0·) crystal plane serving as a surface thereof and to be bonded thereto a first stacked structure portion composed of a hexagonal phosphide-based semiconductor layer disposed in a manner of a surface of the group 111 nitride semiconductor layer, and as a result, preventing dislocations contained in the group III nitride semiconductor from passing through the interface of the stacked structural portion The scalar boron is a semiconductor layer of is: -85-(83) 1310247 bottom. It is further contemplated to bond the hexagonal group III nitride semiconductor layer to the upper side surface of the hexagonal phosphide-based semiconductor layer constituting the first stacked structure portion to provide a second stacked structural portion. Due to the provision of the second stacked structure portion, a group III nitride semiconductor containing a crystal defect of only a small density such as a threading dislocation can be produced. According to the present invention, it is therefore possible to manufacture a stacked structure with a semiconductor layer superior to crystallinity, even if it is provided on a substrate by a group III nitride semiconductor layer containing a large amount of crystal defects, and thus provides an improved A compound semiconductor device of device nature. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic plan view showing an LED illustrated in the first embodiment. Fig. 2 is a schematic cross-sectional view showing the LED taken from Fig. 1 along the broken line II-II. © Fig. 3 is a schematic plan view showing the arrangement of atoms of a hexagonal BP crystal layer viewed from a direction perpendicular to the c-axis. Fig. 4 is a schematic plan view showing an arrangement of atoms of a hexagonal BP crystal layer viewed in a direction parallel to the c-axis. Fig. 5 is a schematic diagram showing a cross-sectional structure of a device which allows current to flow in a direction parallel to the plane of the hexagonal single crystal layer (〇. 〇. 〇. 1.). Fig. 6 is a schematic view showing a cross-sectional structure of a device for causing a current to flow in a direction perpendicular to a (0.0.0.1.) crystal plane of a hexagonal single crystal layer. Fig. 7 is a schematic diagram showing the cross section of the ME SFET in which the current can flow in the direction of the crystal plane perpendicular to the hexagonal single crystal layer (-86 - (84) 1310247 Ο .0.0.1.). Fig. 8 is a schematic plan view showing the LEDs explained in the second embodiment. Fig. 9 is a schematic cross-sectional view showing an LED taken from Fig. 8 along the broken line IX-IX. Fig. 1 is a schematic plan view showing the LEDs explained in the third embodiment. Fig. 1 is a schematic cross-sectional view showing an LED taken from Fig. 10 along the broken line XI-XI. Fig. 12 is a schematic plan view showing the FET explained in the fourth embodiment. Fig. 13 is a schematic diagram showing the arrangement of atoms in the joint region. Fig. 14 is a schematic view showing the outline of the LED described in the fifth embodiment. Fig. 15 is a schematic cross-sectional view showing an LED taken from Fig. 14 along a broken line XV-XV. Fig. 16 is a schematic plan view showing the LEDs explained in the sixth embodiment. Fig. 17 is a schematic cross-sectional view showing an LED taken from Fig. 16 along the broken line XVII-XVII. Figure 18 is a schematic diagram illustrating a long-term mating junction system. Fig. 19 is a schematic plan view showing the LEDs explained in the seventh embodiment.

-87- (85) 1310247 Figure 20 shows an example of an LED taken along line χ χ _ X X from Figure 19. Fig. 21 is a schematic plan view showing the LEDs explained in the eighth embodiment. Fig. 22 is a schematic cross-sectional view showing an LED taken along the dotted line ΧΧΠ_ΧΧΙΙ from Fig. 21. Fig. 2 is a schematic plan view showing the outline of L E D explained in the ninth embodiment. Fig. 24 is a schematic cross-sectional view showing an LED taken from Fig. 23 along a broken line χχιν_χχιν. Fig. 25 is a schematic plan view showing an FET of the LED explained in Embodiment 10. Fig. 26 is a schematic plan view showing the l E D explained in the embodiment 11. Figure 27 is a schematic cross-sectional view showing the LED taken from the 26th view along the broken line XXVII-XXVII. Fig. 28 is a schematic plan view showing the L E D explained in the embodiment 12. [Explanation of main component symbols] 1 : Compound semiconductor device light-emitting diode 2 : Light-emitting diode 3 : Field effect transistor 1 〇: hexagonal compound semiconductor material

-88- (86) (86)1310247 10a: (1 · 0 . -1.0 ·) Surface formed by crystal plane 11· ( 0.0·0_1·) crystal plane 1 1 a : Group 11 atomic plane 1 1 b : V group Atomic Plane 1 2 : Hexagonal Phosphorus Boron-Based Semiconductor Material 1 2 a : Surface 13· ( 0.0.0.1·) Planar Surface 1 3 a : Group 111 Atomic Plane 13b : Group V Atomic Plane 20: Hexagonal Boron Nitride Layer 20H: gap 3 0 : stack structure 3 1 : conductive hexagonal aluminum nitride substrate 3 2 : hexagonal boron phosphide layer 3 3 : light-emitting portion 3 4 : polar ohmic electrode 3 5 : polar ohmic electrode 40 : stacked structure 4 1 : Conductive hexagonal gallium nitride substrate 42 : hexagonal boron phosphide layer 43 : light emitting portion 4 4 : polar ohmic electrode 4 5 : polar ohmic electrode 50 : stacked structure - 89 - (87) (87) 1310247 5 1 : base Material 52: hexagonal boron phosphide layer 53: electron transport layer (channel layer) 54: electron supply layer 5 5 : source 5 6 : drain 6 〇: bonding system 61: hexagonal single crystal 6 1 A : surface 6 1 B : Sapphire (0 · 0 · 0.1 .) crystal plane 62: hexagonal phosphide-based semiconductor layer 62A: bonding surface 62B: (0·0·0_2.) crystal plane 1 0 〇: stacked structure 1 0 1 : Substrate 102: hexagonal phosphide-based semiconducting Bulk layer 102Α: undoped η-type monomer ΒΡ layer 102 Β : η-type GaN layer 103: wurtzite type hexagonal η-type GaN layer 1 03 A : hexagonal η-type GaN layer 103B: wurtzite type Hexagonal η-type GaN layer 104: lower cladding layer 105: light-emitting layer 106: upper cladding layer - 90 - (88) 1310247 107: contact layer 108: p-type ohmic electrode 109: η-type ohmic electrode 1 2 0 A : first stacked structure portion 120B : second stacked structural portion 2 0 0 : stacked structure 20 1 : substrate

202: hexagonal BP layer 203: undoped n-type GaN layer 204: lower cladding layer 205: light-emitting layer 206: upper cladding layer 2 0 7 : contact layer 208: p-type ohmic electrode 209: η-type Ohmic electrode 3 00 : stacked structure 3 0 1 : substrate 3 02 : η-type GaN layer 3 03 : undoped p-type monomer BP layer 3 0 4 : electron transport layer 3 05 : electron supply layer 3 0 6 : contact layer 307: Schottky gate 3 0 8 : ohmic source - 91 (89) 1310247 3 0 9 : ohmic drain 310: Schottky contact forming layer 320A: first stacked structure portion 3 20B: second Stacking structure part 3 3 0 : recess part -92 -

Claims (1)

1310247 (1) X. Patent Application No. 1. A compound semiconductor device comprising: a compound semiconductor having a hexagonal single crystal layer, a phosphide boron-based semiconductor layer formed on the surface of the hexagonal single crystal layer, and a semiconductor layer a stacked structure of a compound semiconductor layer on the semiconductor layer of the phosphide boring; and an electrode disposed on the stacked structure; wherein the borophosphide-based semiconductor layer is disposed on the hexagonal single crystal 0 layer ( 1.1.-2.0.) The hexagonal crystal on the surface of the crystal face is formed. 2. The compound semiconductor device according to claim 1, wherein the hexagonal single crystal layer is formed of a single crystal of α-alumina. A compound semiconductor device according to claim 1, wherein the hexagonal single crystal layer is formed of a hexagonal group III nitride semiconductor. The compound semiconductor device according to any one of claims 1 to 3, wherein the boron phosphide-based semiconductor layer is formed of a crystal having a (1.1.-2.0.) crystal plane as its surface. The compound semiconductor device according to any one of claims 1 to 3, wherein the boron phosphide-based semiconductor layer is composed of a crystal having a (1.0.1 to 1-0.) crystal plane as its surface. Formed. 6. The compound semiconductor device according to any one of claims 1 to 3, wherein the crystal plane of the phosphide-based semiconductor layer is substantially parallel. Arranging 'in the thickness direction of the semiconductor layer' and wherein the distance of the "n" continuity (〇·〇. 〇. 2 .) crystal plane of the semiconductor layer is substantially equal to the c-axis length of the single crystal layer, η" represents a positive integer of 2 or more. -93- (2) 1310247 7. The compound semiconductor device according to claim 6, wherein the "η" represents 6 or less. 8. The compound semiconductor device according to any one of claims 1 to 3, wherein the compound semiconductor layer is formed of a hexagonal semiconductor material. 9. The compound semiconductor device according to claim 1, wherein the squaring semiconductor layer and the compound semiconductor layer are bonded via an (® 1.1·-2·0.) crystal plane as an interface. 10. The compound semiconductor device according to claim 1, wherein the phosphide-based semiconductor layer is bonded to the compound semiconductor layer via a (1.0.-1.0.) crystal plane as an interface. A compound semiconductor device according to claim 9 or 10, wherein a (0.0.0.1.) crystal plane constituting the semiconductor layer of the compound and a semiconductor layer constituting the boron phosphide as a base are provided (〇.〇. 0.1.) The crystal face is configured to be parallel to the stacking direction of the compound semiconductor. The compound semiconductor device according to any one of claims 1 to 3, wherein the boron phosphide-based semiconductor layer does not contain a reverse phase grain boundary. The compound semiconductor device according to any one of claims 1 to 3, wherein the electrode system is configured such that a device operating current is substantially parallel to a semiconductor layer constituting the phosphide boron base (0· The 0·0·1·) crystal plane and the crystal plane of the compound semiconductor layer (构成·〇.〇. 1.) flow in the direction of the crystal plane. 14. The compound semi-94-(3) 1310247 conductor device of any one of claims 1 to 3 wherein the electrode system is configured such that the device operating current can be substantially perpendicular to the bottom of the phosphide. The crystal plane of the semiconductor layer (及·〇.0.1.) and the direction of the (0·0·0.1.) crystal plane constituting the semiconductor layer of the compound; The compound semiconductor device according to any one of claims 1 to 3, wherein the boron phosphide-based semiconductor layer is formed of hexagonal monomer phosphide. A compound semiconductor device as claimed in claim 15 wherein the hexagonal monomer phosphide has a C-axis length in the range of 〇·52 nm or 且 and 0.53 nm or less. .nc. -95-