JP3053836B2 - (III) —Method of manufacturing Group V compound semiconductor device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Field of Industrial Application) The present invention relates to a method for manufacturing a group III-V compound semiconductor device, and more specifically, to a p-type doped with magnesium.
The present invention relates to a method for manufacturing a group III-V compound semiconductor device including a step of forming a type III-V compound semiconductor layer by metal organic chemical vapor deposition.

(Prior Art) When a p-type III-V compound semiconductor is produced by a metal organic chemical vapor deposition (MOCVD) method, a p-type dopant is usually used as a p-type dopant.
Zinc is used. Zinc shows almost good doping characteristics as a dopant for GaAs, but InP, GaI
When used as a dopant for a group III-V compound semiconductor containing phosphorus such as nAlP, not only the incorporation rate is low but also the activation rate is low. Besides, the diffusion speed is too fast,
Poor controllability.

Therefore, attempts have been made to use beryllium or magnesium as a p-type dopant instead of zinc.
However, although beryllium exhibits good properties as a p-type dopant in the molecular beam epitaxial growth method, its organic compound exhibits strong toxicity,
Application to MOCVD must be avoided.

Organic compounds of magnesium have less toxicity problems than organic beryllium compounds. As such organomagnesium, alkyl magnesium compounds such as dimethyl magnesium and diethyl magnesium are considered,
These alkylmagnesium compounds have a very strong self-association property and do not have an effective vapor pressure necessary for the MOCVD method.
In addition, although biscyclopentadienyl magnesium (Cp ₂ Mg) having a cyclopenta ring with a relatively high vapor pressure is used, the memory effect remaining in the apparatus (the dope source attached to the reaction tube is Control of doping is very difficult because
It is not possible to ensure steepness such as to achieve a change in density of three digits or more within 0.1 μm, which is generally required for devices. Furthermore, in order to increase the vapor pressure, bismethylcyclopentadienyl magnesium ((CH ₃ ) ₂ Cp ₂ Mg) having a methyl group introduced into the cyclopenta ring is used in some cases. Not obtained.

(Problems to be Solved by the Invention) As described above, an alkyl compound of magnesium has a low vapor pressure, and a magnesium compound having a cyclopenta ring has a high memory effect and it is difficult to dope with good controllability.

Therefore, the present invention can perform p-type doping with excellent controllability by metal organic chemical vapor deposition by using an organomagnesium compound having an effective vapor pressure and having no memory effect as a magnesium doping source III. It is an object of the present invention to provide a method for manufacturing a group V compound semiconductor device.

[Structure of the Invention] (Means for Solving the Problems) The method for producing a group III-V compound semiconductor device according to the present invention provides a method for manufacturing a p-type group III-V compound semiconductor layer doped with magnesium by metalorganic vapor phase epitaxy. When forming, an adduct of an organometallic compound containing magnesium (organomagnesium compound) and another compound is used as a dope source of magnesium.

(Action) According to a study conducted by the present inventors on various organomagnesium compounds, the memory effect of Cp ₂ Mg is not an essential problem common to organomagnesium compounds,
It has been confirmed that this is a problem specific to a magnesium compound having a cyclopenta ring. That is, the memory effect can be avoided by using an organic magnesium compound having no cyclopenta ring as a doping source. Also,
Regarding the vapor pressure, even an organomagnesium compound that does not have a sufficiently effective vapor pressure by itself can have a sufficient vapor pressure by forming an adduct with another compound. There was found. As described above, dimethylmagnesium is a solid, has a very strong self-association property, and is not suitable as a doping source of magnesium because of its low vapor pressure.However, by forming an adduct with another compound, It was found that self-association was dramatically suppressed and the vapor pressure increased. For example, Al
Mg (Al (CH ₃ ) ₄ ) ₂ (octamethyldialuminum monomagnesium) which is an adduct with (CH ₃ ) ₃
CH ₃ (MgAl (CH ₃ ) ₄ (pentamethylaluminum magnesium) has a melting point of 39 ° C. and 54 ° C., respectively, and can secure a sufficient vapor pressure.Mg (Al (CH ₃ ) ₄ ) ₂
When an additive containing aluminum such as CH ₃ (MgAl (CH ₃ ) ₄ ) and CH ₃ (MgAl (CH ₃ ) ₄ ) is used, aluminum as a constituent element is taken into the semiconductor layer simultaneously with magnesium, but a group III-V semiconductor containing aluminum is grown. This is not a problem because the doping source is very small as compared with the aluminum compound used for the formation.

Thus, according to the present invention, when forming a p-type group III-V semiconductor layer doped with magnesium, an organic magnesium compound having a sufficiently high vapor pressure as a doping source of magnesium and having no memory effect and another compound are used. By using the additive of (1), steep doping can be performed with good reproducibility.

(Examples) Hereinafter, the present invention will be described in more detail with reference to examples.

FIG. 1 shows a MOCVD apparatus used for manufacturing a group III-V compound semiconductor device of the present invention. This apparatus has reaction tubes 11, 12, and 13 made of quartz, and a necessary raw material gas is taken in from gas introduction ports located above each of the reaction tubes. These reaction tubes 11, 12 and 13 are vertically mounted in one chamber 14 through the upper lid thereof. The substrate 15 is placed on a graphite susceptor 16, is disposed so as to face the openings of the reaction tubes 11, 12, and 13, and is heated to a high temperature by an external high-frequency coil 17. The susceptor 16 is attached to a quartz holder 18 and can be moved under the respective reaction tubes 11, 12, and 13 at a high speed of, for example, about 0.1 second by a drive shaft 19 via a magnetic fluid seal. Driving is performed by a computer-controlled motor installed outside. At the center of the susceptor 16, a thermocouple 20 is placed to monitor the temperature immediately below the substrate. The cord portion uses a slip ring to prevent twisting due to rotation. The reaction gas is extruded by the fast downflow of hydrogen gas from the upper outlet 21, and the mixture is suppressed as much as possible, and is exhausted from the exhaust port 22 by the rotary pump.

By using such a MOCVD apparatus, each reaction tube 1
By flowing a desired source gas through 1, 12, and 13 and moving the substrate 15 by a computer-controlled motor, a multilayer structure can be formed on the substrate 15 with an arbitrary lamination period and an arbitrary composition. In this method, a sharp concentration change that cannot be obtained by the gas switching method can be easily realized.
In addition, in this method, it is not necessary to switch the reaction gas at a high speed in order to form a steep hetero interface.Therefore, the problem that the decomposition rate of NH ₃ or PH ₃ as a raw material gas is slow is set by setting a low gas flow rate. Can be solved.

By using the MOCVD apparatus shown in FIG. 1, the following group III-V compound semiconductor devices were produced. The raw materials used are trimethylgallium (TMG), trimethylaluminum (TMA), triethylboron (TEB), and trimethylindium (TMI) as group III metal organic compounds.
Phosphine (PH ₃ ), arsine (AsH
₃ ), ammonia (NH ₃ ) was used, and silane (SiH ₄ ) and Mg (Al (CH ₃ ) ₄ ) ₂ ) were used as doping sources.

FIG. 2 shows that the substrate temperature was 750 ° C., the pressure in the reaction tube was 25 Torr, the growth rate was 3 μm / hour, and the flow rate in the reaction tube was 70 cm /
1 is a schematic sectional view of a III-V compound semiconductor device manufactured in seconds. This device has a p-type GaAs substrate (1 × 10 ¹⁹ cm ⁻³ ) and a p-type GaAs buffer layer 32 (0.5 μm,
× 10 ¹⁸ cm ^-3 ), p-type In _0.5 (Ga _1-x Al _x ) _0.5 P layer 33 (1 μm)
m, 1 × 10 ¹⁸ cm ⁻³ ), n-type In _0.5 (Ga _1-x Al _x ) _0.5 P layer 34
(1 μm, 1 × 10 ¹⁸ cm ⁻³ ) is formed, and n
A type GaAs contact layer 35 (2 μm, 1 × 10 ¹⁷ cm ⁻³ ) is formed. Ohmic electrodes 36 and 37 are formed on both sides of the element, respectively. These ohmic electrodes are connected to a power supply 38.

When the resulting wafer was cleaved to produce a diode, the idea factor was close to 1,
Good IV characteristics were exhibited. In addition, Mg near the pn junction interface
The SIMS analysis showed that the concentration was constant in the p layer, no diffusion was observed in the n layer, and a sharp change in concentration of 10 ³ or more at 100 ° was observed at the junction interface. A constant carrier concentration of 1 × 10 ¹⁸ cm ⁻³ was ensured in the p-layer.

FIG. 3 is a sectional view showing a schematic structure of a semiconductor laser device manufactured by the method of the present invention. This laser device has an n-type GaAs substrate 41, on which an n-type
A GaAs buffer layer 42 and an n-type InGaP buffer layer 43 are formed. On the buffer layer 43, a double heterojunction structure portion including an n-type InGaAlP-based cladding layer 44, an InGaP active layer 45, and p-type InGaAlP-based cladding layers 46, 47, and 48 is formed. Here, the cladding layer 47 has a low Al composition,
Acts as an etch stop layer. Also, the cladding layer 48
Are processed in a stripe shape, whereby stripe-shaped ribs are formed in the p-type cladding layer. On the cladding layer 48, a p-type InGaAlP-based intermediate band gap layer 49
Are formed. N on the side of the double heterojunction
A GaAs current blocking layer 51 is formed, on which a p-type GaAs
A contact layer 52 is formed. Further, a metal electrode 53 is formed on the upper surface of the contact layer 52, and a metal electrode 54 is formed on the lower surface of the substrate 41. In this structure, the current confinement is performed by the intermediate band gap layer 49 and the current blocking layer 51, and the optical waveguide is performed by the cladding layer 48 formed in the stripe-shaped mesa.

Cleaving the wafer thus obtained, the resonator length 250μ
m laser device, the threshold current was 40 mA,
Good characteristics with a differential quantum efficiency of 20% per side were obtained. The light output increased linearly to 10 mW or more according to the drive current, and showed good current-light output characteristics without kink.
Further, it was found that both the far-field image and the near-field image were unimodal, and that good mode control was performed. The operating voltage is 2.
It is as low as 1V and has a very long life of 10,000 hours. As described above, by performing good doping with good controllability, a semiconductor laser that simultaneously achieves a low threshold value, high output, and high reliability can be obtained with good reproducibility.

FIG. 4 is a cross-sectional view of a semiconductor laser device obtained by the method of the present invention, similarly to the above, and differs from the laser device of FIG. 3 in that current confinement is performed by the p-type GaAs contact layer 50. .

Further, a laser device having the structure shown in FIG. 5 can be similarly manufactured by the method of the present invention.

6 to 8 show sectional views of other compound semiconductor devices manufactured by the method of the present invention. These elements are made of GaAlBNP-based materials. To fabricate these devices, the substrate temperature is 850 to 1150 ° C and the pressure is
The gas flow rate was adjusted so that the pressure was 0.3 atm, the total flow rate of the raw material gas was 1 liter / minute, and the growth rate was 1 μm / hour. Specific flow rates of each raw material gas are TEB 1 × 10 ⁻⁶ mol / min, TMA 5 × 10 ⁻⁷ mol / min, TEG 5 × 10 ⁻⁷ mol / min, phosphine 5 × 10 ⁻⁴ mol / min, ammonia 1 × 10 ^-3 mol / min. Note that Ga
The typical lamination period for fabricating AlN / BP superlattice layers is 20
Å, the ratio of the thickness of the nitride layer to the thickness of the boride layer was 1: 1. In the following examples, this value was set unless otherwise specified. If the ratio of the thickness of GaAlN to the BP of the light emission amount is smaller than 1, the band structure changes from the direct transition type to the indirect transition type, and the luminous efficiency decreases. Also, the lamination cycle is not limited to the above value, but if it exceeds 50 °, localization of electrons and holes becomes remarkable and conductivity decreases, so it is desirable to set the cycle to 50 ° or less.

The laser device shown in FIG. 6 has an n-type GaP substrate 71, on which an n-type GaP buffer layer 72 and an n-type BP buffer layer 73 are formed. On the buffer layer 73, an n-type Ga _x Al _1-x N / BP multilayer clad layer 74, an undoped Ga _x Al _1-x N / BP multilayer active layer 75, and a p-type Ga _x Al _1-x N / A double hetero junction composed of the BP multilayer clad layer 76 is formed. Note that an n-type BP current blocking layer 77 is formed on the cladding layer 76 so as to leave a striped portion at the center. Current blocking layer 77
P covering the upper and striped exposed surfaces of the cladding layer 76
A type BP contact layer 78 is formed. Further, a metal electrode 79 is formed on the upper surface of the contact layer 78, and a metal electrode 80 is formed on the lower surface of the substrate 71, respectively. In this structure, since the current blocking layer 77 is formed around the lower convex portion of the contact layer 78, current confinement and optical waveguide can be realized in a self-aligned manner.

The more specific manufacturing process of the laser device shown in FIG. 6 is as follows. Using the MOCVD apparatus shown in FIG. 1 and under the above-mentioned conditions, first, an n-type GaP substrate 71 (Si-doped, 1 × 10 ¹⁸ cm ⁻³ )
An n-type GaP buffer layer 72 (Si-doped, 1 × 10 ¹⁸ c
m ⁻³ , 1 μm), n-type BP buffer layer 73 (Si-doped, 1 × 1
0 ¹⁷ cm ⁻³ , 1 μm), n-type Ga _0.4 Al _0.6 N / BP multilayer clad layer 74 (Si-doped, 1 × 10 ¹⁸ cm ⁻³ , 1 μm), undoped Ga _0.5 Al _0.5 N / BP multilayer active layer 75 (0.1 μm) and p-type Ga _0.4 Al _0.6 N / BP multilayer clad layer 76 (Mg-doped,
× 10 ¹⁸ cm ^-3 , 1 μm) was grown. Subsequently, on the cladding layer 76, an SiO ₂ film mask was formed in a stripe shape having a width of 5 μm by thermal decomposition of silane gas and photolithography, and the n-type BP current blocking layer 77 (Si-doped, 1 ×
MOCVD on 10 ¹⁸ cm ^-3 , 1 μm) only on top of cladding layer 76
After selective growth by the method, the SiO ₂ film was removed. Then, a p-type BP contact layer 78 (Mg-doped, 1 × 10 3) is formed on the current blocking layer 77 and the cladding layer 76 left in a stripe shape.
¹⁸ cm ^-3 , 1 μm). Thereafter, the Au / Zn electrode 79 is placed on the contact layer 78 by a normal electrode attaching method.
Then, an Au / Ge electrode 80 is formed on the lower surface of the substrate 71 to obtain a laser wafer having the structure shown in FIG.

The obtained wafer was cleaved to produce a laser element having a cavity length of 300 μm.
Green light laser oscillation was confirmed by a 0 μsec pulse operation.
The oscillation threshold current density was about 50 kA / cm ² . Also,
It operated stably for more than 100 hours.

FIG. 7 is a modification of the semiconductor device of FIG. Sixth
The cladding layer 76 of the double heterojunction similar to that shown in the figure is processed into a convex shape, and controls the transverse mode by giving an equivalent difference in the refractive index in the lateral direction. On the cladding layer 76, an n-type BP current blocking layer
77 are formed. Other structures are the same as those in FIG. In the structure of FIG. 7, the second conductivity type cladding layer
Since the current blocking layer 77 is formed around the projection 76, current confinement and refractive index type optical waveguide can be realized in a self-aligned manner.

The device shown in FIG. 7 is manufactured by using the MOCVD apparatus shown in FIG. 1 and growing the same double hetero-wafer under the same conditions as the device manufacturing conditions shown in FIG. An SiO ₂ film mask was formed in a stripe shape with a width of 5 μm by thermal decomposition and photolithography, and the cladding layer 76 was etched to form a stripe-shaped mesa with a width of 3 μm. Then, the n-type BP current blocking layer 77 (Si-doped, 1 × 10 ¹⁸ cm ⁻³ , 1
μm) was selectively grown only on the upper surface of the clad layer 76 by MOCVD. Thereafter, the SiO ₂ film was removed, and a p-type BP contact layer 78 (Mg doped, 1 × 10 ¹⁸ cm ⁻³ , 1.5 μm) was grown. Thereafter, electrodes were attached to obtain a laser wafer having the structure shown in FIG.

The obtained wafer was cleaved to produce a laser element having a cavity length of 300 μm.
Green light laser oscillation was confirmed by a 0 μsec pulse operation.
The oscillation threshold current density was about 70 kA / cm ² . Although the threshold current density was somewhat high, a far-field image of a single peak was confirmed, and it was found that good transverse mode control was performed. In addition, it operated stably for more than 100 hours.

FIG. 8 is a sectional view of a light emitting device (LED) manufactured by the method of the present invention. On a p-type GaP substrate 91, p-type GaP
A buffer layer 92 and a p-type BP buffer layer 93 are sequentially formed, on which a p-type GaAlN / BP superlattice layer 94 and an undoped GaAlN / BP
A superlattice layer 95 and an n-type GaAlN / BP superlattice layer 96 are sequentially laminated, and an n-type GaN contact layer 97 is further formed thereon. Ohmic electrodes 98 and 99 are formed on both surfaces of the element wafer. This LED can be manufactured in the same manner as described above.

P-type III-
When forming a group V compound semiconductor layer, Mg is used as a raw material for Mg.
When (Al (CH ₃ ) ₄ ) ₂ and CH ₃ (MgAl (CH ₃ ) ₄ ) are used, Al as a constituent element is taken in simultaneously with Mg. Therefore, care must be taken when growing a III-V compound semiconductor that does not contain Al. According to the study of the present inventors, it has been found that by performing vapor phase growth in a certain temperature range, the incorporation of Al can be effectively avoided. The data will be described below.

FIG. 9 was used to examine the decomposition rate of these raw materials.
4 shows the substrate temperature dependence of the amounts of Mg and Al deposited. Mg compounds have a low decomposition temperature and are unstable, so at relatively low temperature
While Mg precipitates, the Al compound has a high decomposition temperature and is stable, so the precipitation of Al starts from a relatively high temperature portion and saturates.

FIG. 10 shows that Mg (Al (CH ₃ ) ₄ ) ₂ was used as a raw material and Mg was added.
The growth temperature dependency of the Al mixing amount with respect to the Mg doping amount when nP is grown is shown. The content of Al began to decrease below 650 ° C, and sharply decreased below 570 ° C. In particular, at 550 ° C., the content is 0.1% or less, and it can be used in ordinary optical / electronic devices without any problem. In other words, if growth is performed at a low temperature of 650 ° C. or less, decomposition of trimethyl aluminum is suppressed,
Al contamination is reduced to almost negligible. This result corresponds to the decomposition temperature of the raw material, and was the same when growing GaAs or the like.

Therefore, as described in the previous embodiment, Mg containing Al
In the case where a p-type III-V compound semiconductor layer is vapor-phase grown with a compound, in order to suppress the incorporation of Al into the growth layer,
The growth temperature is set to 650 ° C. or lower, preferably 55 ° C. or lower. In particular, when it is desired to obtain a group III-V compound semiconductor layer containing no Al, this limitation of the growth temperature is effective.

FIG. 11 is a structural diagram showing a schematic structure of a semiconductor laser device according to an example of the present invention. In the drawing, reference numeral 101 denotes an n-type InP substrate, on which an n-type InP cladding layer 102 (Si-doped, 1 × 10 ¹⁸ cm ⁻³ , 1 μm) serving also as a buffer layer is formed. GaInAsP active layer 103 on top
(0.1 μm) and a p-type InP cladding layer 104 (Mg-doped, 1 × 10 ¹⁸ cm ⁻³ , 1 μm) are stacked to form a mesa stripe. Both sides of the mesa are buried with a high-resistance InP buried layer 105 (1 μm), and a p-type GaInAs layer is formed on the uppermost clad layer 104 and the buried layer 105 of the mesa.
P contact layer 106 (Mg doped, 1 × 10 ¹⁸ cm ⁻³ , 0.5 μm)
m) is formed. Then, Au / AuGe is provided on the lower surface of the substrate 101 as the n-side electrode 107 and Au / AuZn is provided on the contact layer 106 as the p-side electrode 108.

All of the above group III-V compound semiconductor layers were epitaxially grown by MOCVD. As raw materials, a group III organic metal (trimethyl gallium (TMG), trimethyl indium (TMI)) and a group V hydride (phosphine (PH ₃ ), arsine (AsH ₃ )) are used. Silane (SiH ₄ ) and Mg (Al (CH ₃ ) ₄ ) ₂ were used. The growth conditions were: substrate temperature 620 ° C, reaction tube pressure 200Tor
r, a growth rate of 3 μm / h, and a flow rate of 70 cm / sec in the reaction tube.

When the obtained wafer was cleaved to produce a semiconductor laser having a cavity length of 250 μm, the oscillation wavelength was about 1.54 μm and single mode oscillation characteristics were obtained.

As described above, the present invention has been described with reference to the preferred embodiments.
The present invention is not limited to these embodiments.
For example, in the above embodiment, Mg (Al
(CH ₃ ) ₄ ) ₂ was used, but an octaalkylaluminum magnesium (eg, Mg (Al (C (R) ₄ ) ₂ ) (where R is an alkyl group)
Pentaalkylaluminum magnesium (for example, CH ₃ (MgAl (Cg)) represented by ₂ H ₅ ) ₄ ) ₂ or a formula RMg (Al (R) ₄ ) (where each R is an alkyl group)
H _{3) 4),} can be carried out in exactly the same manner by using a _{(C 2 H 5) Mg (} Al (C 2 H 5) 4). Further, as a Mg doping source, Mg
(N (CH ₃ ) ₄ ) ₂ , CH ₃ (MgN (CH ₃ ) ₄ ), or an adduct of an organomagnesium compound and ethylenediamine can also be used.

In addition, the present invention relates to GaAs, InP, GaAl, InGaAsP
It can be applied to the production of various devices such as semiconductor lasers, LEDs, FETs, HBTs composed of various III-V compound semiconductor materials, such as GaN, InGaAlP, InGaAlAs, InGaAs, InAlAs, and others.

Further, as the MOCVD material, triethyl gallium as a Ga source (TGG), triethyl aluminum as Al raw material (TEA), exactly as implemented using trimethylboron (TMB) or diborane (B ₂ H ₆₎ as a B material it can. In addition to hydrazine as an N raw material, Ga (C _{2
H 5) · NH 3, Ga} (CH 3) 3 · N · (CH 3) organometallic compound is a adduct containing ₃ such as nitrogen can also be used.

In addition, various modifications can be made without departing from the gist of the present invention.

[Effects of the Invention] As described above, according to the present invention, when forming a p-type III-V group compound semiconductor layer doped with magnesium by MOCVD, metalorganic vapor phase epitaxy is used as a magnesium doping source. By using an adduct of an organomagnesium compound and another compound, steep magnesium doping can be performed with good controllability, and a III-V compound semiconductor device that achieves low threshold, high output, and high reliability at the same time is reproduced. It can be manufactured with good quality.

[Brief description of the drawings]

FIG. 1 is a view showing a metal organic chemical vapor deposition apparatus suitable for carrying out the present invention, FIG. 2 is a view showing a diode according to one embodiment, and FIG. 3 is a view showing a semiconductor laser according to another embodiment. FIG. 4 is a diagram showing a semiconductor laser according to another embodiment in which the device of FIG. 3 is modified. FIG. 5 is a diagram showing a semiconductor laser according to another embodiment in which the device of FIG. 3 is also modified. 6 is a diagram showing a semiconductor laser according to another embodiment, FIG. 7 is a diagram showing a semiconductor laser according to another embodiment in which the element of FIG. 6 is modified, and FIG. 8 is a diagram showing an LED according to another embodiment. FIG. 9 is a diagram showing the substrate temperature dependence of the amounts of Mg and Al deposited from the Mg raw material, FIG. 10 is a diagram showing the growth temperature dependence of the amount of Al mixed with the Mg doping amount, and FIG. FIG. 2 is a diagram illustrating a semiconductor laser according to an embodiment. 11,12,13 ... Reaction tube, 15,31,41,71,91,101 ... Substrate.

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification code FI H01L 33/00 H01S 5/30 (56) References JP-A-63-304617 (JP, A) JP-A-63-207118 (JP) , A) JP-A-58-103394 (JP, A) (58) Fields investigated (Int. Cl. ⁷ , DB name) H01L 21/205

Claims (5)

(57) [Claims] A p-type III-V doped with magnesium.
In a method for producing a group III-V compound semiconductor device including a step of forming a group III compound semiconductor layer by metal organic chemical vapor deposition, as a magnesium doping source, an adduct of an organometallic compound containing magnesium and another compound is used. A method for manufacturing a group III-V compound semiconductor device, comprising: 2. The compound according to claim 1, wherein said adduct is octaalkylaluminum magnesium represented by the formula Mg (Al (R) ₄ ) ₂ (where R is an alkyl group).
A method for manufacturing a group V compound semiconductor device. 3. The compound according to claim 2, wherein R is a methyl group.
A method for manufacturing a group V compound semiconductor device. 4. The III according to claim 1, wherein said adduct is an octaalkylaluminum magnesium represented by RMg (Al (R) ₄ ), wherein each R is an alkyl group.
-A method for manufacturing a group V compound semiconductor device. 5. The method for manufacturing a III-V compound semiconductor device according to claim 1, wherein the step of forming the p-type III-V compound semiconductor layer is performed at a growth temperature of 650 ° C. or less.