JP3152900B2 - Semiconductor laser - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a short-wavelength semiconductor laser using a new III-V compound semiconductor material.

[0002]

2. Description of the Related Art In recent years, with the development of high-speed and high-density information processing systems, the realization of a semiconductor laser (LD) having a short wavelength has been desired.

From the viewpoint of a large band gap, a group III-V compound semiconductor material which is considered to be promising for the realization of a short wavelength semiconductor laser such as green or blue is considered to be BN (4 or 8 eV), AlN (6 eV), GaN ( 3.4 eV),
InP (2.4 eV), AlP (2.5 eV), GaP
Lighter Group III element nitrides and phosphides, such as (2.3 and 2.8 eV), have large band gaps.

However, among these, BN has a large band gap, but it is difficult to synthesize a high-pressure phase (c-BN) having a four-coordinate (sp3) bond, and has three kinds of polymorphs. Not easy to use. Impurity doping is also difficult. InN has a small band gap, poor thermal stability, and can usually only obtain polycrystal. Both AlP and GaN have slightly insufficient band gaps.

The remaining AlN and GaN have a large band gap and excellent stability, and can be said to be suitable for short-wavelength light emission. However, AlN and GaN have a wurtzite type (Wurzeite type, hereinafter abbreviated as WZ type) crystal structure, and have high ionicity, so that lattice defects are likely to occur and a low-resistance p-type semiconductor can be obtained. Can not.

In order to solve such a problem, attempts have been made to obtain a material having a wide band gap by mixing B and N with a III-V group compound containing no B and N.
However, since a conventionally used material and a material containing B and N have significantly different lattice constants of 20 to 40% and different lattice types, stable crystals have not been obtained. For example, when N is mixed with GaP, N can be mixed with only 1% or less of GaP, and it is impossible to obtain a sufficiently wide band gap.

According to the study of the present inventors, GaN and Al
The reason that a low-resistance p-type crystal cannot be obtained in N is that defects due to high ionicity are liable to occur, and these are zinc blende type (Zinc Blende type, hereinafter abbreviated as ZB type) crystals. It has been found that having a WZ structure rather than a structure is an essential cause.

[0008]

As described above, conventionally, the band gap required for realizing a short-wavelength semiconductor laser such as green or blue has a large band gap of, for example, 2.7 eV or more, and pn control is possible. There was no semiconductor material satisfying the condition that the crystal quality was good. Although nitrides such as AlN and GaN are effective materials for obtaining a large band gap, a low-resistance p-type layer cannot be obtained.

The present invention has been made in view of the above circumstances, and has as its object to provide a semiconductor laser using a new III-V group compound semiconductor material.

[0010]

[Means for Solving the Problems]

(Structure) In a semiconductor laser according to the present invention, in a semiconductor laser having a pn junction, a light emitting layer is formed on a single crystal substrate by Ga _x Al.
_y B _1-xy N _z P heterostructure section p-type consisting of _1-z and the n-type double sandwiched by cladding layers are formed, p-type cladding layer of the double heterostructure section for partially convex It is characterized in that it is formed in a protruding rib structure, and a current blocking layer is formed on both sides of the rib structure.

(Action) According to the study of the present inventors, even if a GaAlN-based material is used, it may be formed into a multilayer structure with BP, for example.
It has been found that a stable crystal can sometimes be produced by forming a mixed crystal with. Therefore, in the present invention, Ga
A semiconductor laser is constructed using a double heterostructure part made of an AlN-based material, and a rib structure and a current blocking layer are provided on the p-type cladding layer side of the double heterostructure part. As a result, the current can be effectively confined in the rib structure portion, and a semiconductor laser with a short wavelength can be realized.

[0012]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The details of the present invention will be described below with reference to the illustrated embodiments.

[0013] Figure 1 is a cross-sectional view of a semiconductor laser of one exemplary embodiment of the present invention. On the n-type GaP substrate 11, n-type GaP
A P buffer layer 12 and an n-type BP buffer layer 13 are stacked.

On this n-type BP buffer layer 13, an n-type G
cladding layer 1 consisting of _{a x Al 1-x N /} BP superlattice layer
4. An active layer 15 composed of an undoped Ga _x Al _1-x N / BP superlattice layer and a clad layer 16 composed of a p-type Ga _x Al _1-x N / BP superlattice layer are sequentially laminated to form a double heterostructure. It constitutes a joint. For example, x = 0.4 in the cladding layers 14 and 16 and x in the active layer 15.
= 0.5. Thereby, the cladding layers 14 and 16
Has a band gap of 3.0 eV, the active layer 15 has a band gap of 2.7 eV, and a double hetero junction is formed.

An n-type BP current blocking layer 17 is formed on the p-type cladding layer 16 except for a central stripe portion. A p-type BP contact layer 18 is formed on the current blocking layer 17 and the striped p-type cladding layer 16. A p-side metal electrode 19 is formed on the surface of the contact layer 18, and an n-side metal electrode 20 is formed on the substrate 11.
Are formed. In this semiconductor laser, an n-type BP current blocking layer 17 is formed around a lower convex portion of a contact layer 18, and a current confinement structure and an optical waveguide structure are formed in a self-aligned manner.

This semiconductor laser is manufactured by using a metal organic chemical vapor deposition method (MOCVD method). The manufacturing method will be described in detail below.

FIG. 2 shows a multi-chamber metal organic chemical vapor deposition (MOCVD) apparatus used in the reference example .
In the figure, reference numerals 21, 22, and 23 denote reaction tubes made of quartz, and necessary raw material gases are taken in from gas introduction ports located above the respective reaction tubes. These reaction tubes 21, 22 and 23 are vertically mounted in one chamber 24 through its upper lid. The substrate 25 is placed on a graphite susceptor 26, arranged so as to face the openings of the respective reaction tubes 21, 22 and 23, and heated to a high temperature by an external high-frequency coil 27.

The susceptor 26 is mounted on a quartz holder 28 and can be moved at a high speed below each of the reaction tubes 21, 22, 23 by a drive shaft via a magnetic fluid seal. Driving is performed by a computer-controlled motor installed outside. A thermocouple 30 is placed at the center of the susceptor, monitors the temperature immediately below the substrate, and takes it out. The cord portion uses a slip ring to prevent twisting due to rotation. The reaction gas is extruded by the rapid flow of hydrogen gas from the upper jet port 31 and the exhaust gas 32 is suppressed while the mutual mixing is suppressed as much as possible.
Exhausted by a rotary pump.

With such an MOCVD apparatus, a desired source gas is flowed through each of the reaction tubes 21, 22, and 23, and the substrate 25 is moved by a motor controlled by a computer. A multilayer structure can be produced with the composition. In this method, a sharp concentration change that cannot be obtained by the gas switching method can be easily realized. In addition, in this method, it is not necessary to switch the gas at a high speed in order to form a steep hetero interface. Therefore, the problem that the decomposition rate of NH ₃ or PH ₃ as a raw material gas is low is solved by setting a low gas flow rate. Can be solved.

The semiconductor laser shown in FIG. 1 was manufactured using this MOCVD apparatus. The source gas is trimethyl aluminum (TMA), trimethyl gallium (TMG), triethyl boron (TEB), ammonia (NH ₃ ), and phosphine (PH ₃ ). Substrate temperature is 850-1150 ° C
Degree, pressure is 0.3 atm, total flow rate of raw material gas is 1 l / m
and the gas flow rate was set such that the growth rate was 1 μm / h.

The approximate gas flow rates are as follows: TMA: 1 × 10
^-6 mol / min, TMG: 1 × 10 ^-6 mol / mi
n, TEB: 1 × 10 ⁻⁶ mol / min, PH ₃ : 5 ×
10 ^-4 mol / min, NH ₃ : 1 × 10 ^-3 mol / m
in. Mg and Si were used as p and n dopants. These impurity doping is performed using silane (SiH ₄ ).
And cyclopentadienyl magnesium (CP ₂ M
g) was mixed with the raw material gas.

[0022] Incidentally, typical lamination period in creating GaAlN / BP superlattice 2 nm, the ratio of the thickness of GaAlN layer and the BP layer is 1: 1, all in the following Reference Examples and embodiments this Set to a value. Although other compositions are possible, when the thickness ratio of the GaAlN layer to the BP layer at the double hetero junction becomes smaller than 1, the band structure changes from the direct transition type to the indirect transition type, and the luminous efficiency decreases. Also, the lamination period is not limited to the above value, but if it exceeds 5 nm, for example, the localization of electrons and holes becomes remarkable and the conductivity is lowered. .

Specific conditions for forming the device shown in FIG. 1 will be described.
The GaP substrate 11 is Si-doped and has a carrier concentration of 1 × 10 ¹⁸
cm ³ , the n-type GaP buffer layer 12 is Si-doped, the carrier concentration is 1 × 10 ¹⁸ / cm ³ , the thickness is 1 μm,
Type BP buffer layer 13 is Si-doped, carrier concentration 1 ×
10 ¹⁷ / cm ³ and thickness 1 μm. On this, as an n-type cladding layer 14, Si doping, carrier concentration 1 × 10
Ga _0.4 Al _0.6 N / BP superlattice layer of ¹⁷ / cm ³ and 1 μm thickness, undoped Ga _0.5 Al _0.5 as active layer 15
As the N / BP superlattice layer and the p-type cladding layer 16, G-doped Mg having a carrier concentration of 1 × 10 ¹⁷ / cm ³ and a thickness of 1 μm is used.
a _0.4 Al _0.6 N / BP superlattice layers are sequentially formed to obtain a double heterojunction structure.

On the p-type cladding layer 16, a SiO ₂ film having a width of 5 μm is formed by thermal decomposition of silane gas and photo-etching, and the p-type BP current blocking layer is selectively formed only on the cladding layer by MOCVD. 17 (Si-doped,
A carrier concentration of 1 × 10 ¹⁷ / cm ³ , 1 μm) is grown. Then, the SiO ₂ film is removed, and the p-type BP contact layer 18 (Mg doped, carrier concentration 1 × 10 ¹⁷ / c)
m ³ , 1 μm). Thereafter, an electrode 19 made of Au / Zn is formed on the contact layer 18 by a normal electrode attaching process, and the electrode 2 made of Au / Ge is formed on the back surface of the substrate.
0 is formed.

When the thus obtained semiconductor laser wafer was cleaved to form a laser element having a cavity length of 300 μm, green light laser oscillation was confirmed by a pulse operation with a pulse width of 100 μsec at the temperature of liquid nitrogen. The threshold current density was about 50 kA / cm ² .

FIG. 3 shows a green semiconductor laser according to another reference example in which the configuration of FIG. 1 is modified. The difference from FIG. 1 is that the current blocking layer 17 composed of an n-type BP layer is formed by selective etching so that a stripe-shaped projection is formed at the center of the p-type cladding layer 16. It is. Others are the same as FIG.

In this reference example , the n-type cladding layer 16 is processed into a convex shape so that a refractive index difference is equivalently formed in the lateral direction.
Thereby, good transverse mode control is performed. Also in the case of this reference example , substantially the same characteristics were obtained by configuring a laser element having a cavity length of 300 μm. Threshold current density is about 70k
A / cm ² . Although the threshold current density was slightly higher, a far-field image of a single peak was confirmed, and it was confirmed that excellent transverse mode control was performed.

FIG. 4 shows a semiconductor according to an embodiment in which a clad layer and an active layer are formed by using a Ga _x Al _y B _1-xy N _z P _1-z mixed crystal layer instead of the GaAlN / BP superlattice layer. Laser. The difference from the configuration of the reference example of FIG.
GaAlBNP cladding layer 41, undoped GaAl
That is, a double hetero junction is constituted by the BNP active layer 42 and the p-type GaAlBNP cladding layer 43.

The fabrication of this semiconductor laser is also the same as the MOCV shown in FIG.
The operation is performed in substantially the same manner as in each of the above Reference Examples using the D apparatus. At that time, stop the movement of the substrate when forming the mixed crystal layer,
All necessary source gases are introduced from one reaction tube. At this time, in order to prevent the mutual reaction of the reaction gases, the source gas for performing the mixed crystal growth is mixed immediately before the reaction tube, and the growth is performed under a low pressure condition. The growth conditions such as the source gas, its flow rate, and the substrate temperature are almost the same as those of the above-mentioned reference example .

The specific element forming conditions are as follows.
The n-type GaP substrate 11 is Si-doped and has a carrier concentration of 1 × 1.
0 ¹⁸ / cm ³ , n-type GaP buffer layer 12 is Si-doped, carrier concentration 1 × 10 ¹⁸ / cm ³ , thickness 1 μm, n
Type BP layer 13 is Si-doped and has a carrier concentration of 1 × 10 ¹⁷ /
cm ³ and a thickness of 1 μm. The n-type cladding layer 41 is Ga
_0.2 Al _0.3 B _0.5 N _0.5 P _0.5 mixed crystal layer (Si-doped,
The carrier concentration is 1 × 10 ¹⁷ / cm ³ , 1 μm), the undoped active layer 42 is a Ga _0.25 Al _0.3 B _0.5 N _0.5 P _0.5 mixed crystal layer (0.1 μm in thickness), and the p-type cladding layer 43 is Ga
_0.2 Al _0.3 B _0.5 N _0.5 P _0.5 mixed crystal layer (Mg doped,
The carrier concentration is 1 × 10 ¹⁷ / cm ³ , 1 μm). The current confinement structure, the optical waveguide structure, and the electrodes are the same as in the reference example of FIG.

The obtained wafer is cleaved to have a resonator length of 30.
When a 0 μm laser element was fabricated, green light laser oscillation was confirmed by a pulse operation with a pulse width of 20 μsec at liquid nitrogen temperature.

FIG. 5 shows a buffer layer 12, 1 between the substrate 11 and the double hetero junction in the configuration of the reference example of FIG.
3 is a reference example in which 3 is omitted. Thus, the buffer layer is not essential and can be omitted in some cases.

However, for the semiconductor material of the double heterojunction of the semiconductor laser according to the present invention, one of the drawbacks is that there is no suitable substrate whose lattice constant matches. For this reason, depending on the growth conditions, a large stress is applied to the double hetero junction, or dislocations occur due to a difference in lattice constant. Therefore, there is a problem in reliability. Therefore, it is better to provide a buffer. References with further consideration of this lattice parameter issue
An example is described next.

FIG. 6 shows a semiconductor laser of such a reference example . This is based on the configuration of the reference example of FIG. 3, and the portion of the n-type BP buffer layer 13 is formed by changing the average composition of Ga.
A superlattice layer of AlN and BP or Ga _x Al _y B _1-xy N
_{This is one} in which an n-type buffer layer 51 having a multilayer structure in which _z P _{1 -z} layers are alternately stacked is substituted.

[0035] Figure 7 Similarly, the portion of Example GaP substrate 11 and the GaP buffer layer 12 in FIG. 3, the lattice constant of a material of a double heterojunction portion is a reference example in which a near SiC substrate 61.

[0036] These reference example, stress concentration on the double heterojunction portion, it is possible to suppress the generation of dislocations. Further, in each of the above reference examples , the BP buffer layer 12
It is also possible and useful to give an appropriate temperature cycle during the growth of GaN to absorb the stress.

In the above embodiment and the reference example , the BP layer is used as the current blocking layer. However, the BP layer is opaque to the emission wavelength, so that the loss is large and the threshold current density is high. Become. When a high output is required, astigmatism increases. In addition, it is important that the current blocking layer has a sufficiently high carrier concentration. In this regard, the current blocking layer is often also n-type, especially when an n-type substrate is used. And the carrier concentration cannot be sufficiently increased. Reference was improved by using WZ type crystal these points the current blocking layer
An example is described next.

FIG. 8 shows a semiconductor laser of such a reference example . 1 is different from the reference example in that the n-type BP current blocking layer 17 is replaced with an n-type AlBNP current blocking layer 81. Otherwise, it is the same as FIG.
The manufacturing process is basically the same as the reference example of FIG. n-type A
As the IBNP current blocking layer 81, specifically, Si-doped,
Al with a carrier concentration of 1 × 10 ¹⁸ / cm ³ and a thickness of 1 μm
A device in which a _0.2 B _0.8 N _0.2 P _0.8 layer was grown was prepared.

The obtained laser element has a cavity length of 300 μm.
In the case of, green laser oscillation was confirmed by a pulse operation with a pulse width of 100 μmsec at the temperature of liquid nitrogen. The threshold current density was about 30 kA / cm ² . At this time, the operating voltage was as low as about 5V.

The reference example of FIG. 9 and the embodiment of FIG. 10 are cases where the same AlBNP current blocking layer is applied to the reference example of FIG. 3 and the embodiment of FIG. Similar effects can be obtained by these reference examples and embodiments. The same effect can be obtained by mixing GA in WZ-type AlBNP.

[0041] Furthermore the current blocking layer, WZ type Ga _u Al
A reference example using a _1-u N layer (o ≦ u ≦ 1) will be described. W
Z-type GaAlN is very effective as a current blocking layer in the semiconductor laser of the present invention because of its high transparency, easy crystal growth, and high growth rate.

[0042] FIG. 11 is a such a reference example, participation in FIG. 1
The n-type GaN current blocking layer 91 is provided in the portion of the n-type BP current blocking layer 17 of the present invention. The manufacturing process is still Fig. 1.
It is basically the same as that of. Specifically, as the n-type GaN current blocking layer 91, Si doping, carrier concentration of 1 × 10
Using a GaN layer of ¹⁸ / cm ³ and 1 μm, a resonator length of 30
A 0 μm laser element was prepared.

In the obtained laser element, green laser oscillation was confirmed by a pulse operation at a liquid nitrogen temperature and a pulse width of 100 μsec. The threshold current density was about 30 kA / cm ² . In addition, it was confirmed that good lateral mode control was performed, and a low operating voltage of about 5 V was obtained. The astigmatism is 10 μm, which is sufficiently smaller than 30 μm when BP is used as a current blocking layer.

FIGS. 12 and 13 similarly show n-type G layers for the configurations of the reference example of FIG. 3 and the embodiment of FIG. 4, respectively.
It is a reference example and the embodiment with aN current blocking layer.
Similar effects can be obtained by these reference examples and embodiments.

As a current blocking layer, GaAlBNP
It is also possible to use a mixed crystal layer or a GaAlN / BP superlattice layer.

In the above embodiment and reference example , G
In the cladding layer composed of the aAlN / BP superlattice layer or the GaAlBNP mixed crystal layer, the upper cladding layer contacts the BP contact layer, and the lower cladding layer contacts the BP buffer layer.
The BP layer is a GAaAlN / BP superlattice layer or GaAlB
Since the band gap is narrower than that of the NP mixed crystal layer, a potential barrier is formed between them, which causes the threshold current density and operating voltage of the device to increase. Therefore, it is effective to interpose an intermediate buffer layer between them so as to make the band gap transition smoothly. Such a reference example will be described below.

FIG. 14 shows a semiconductor laser of such a reference example . This reference example is based on the configuration of the reference example of FIG.
A first intermediate buffer layer 101 made of an n-type Ga _x Al _1-x N / BP superlattice layer between the n-type BP buffer layer 13 and the n-type GaAlN / BP cladding layer 14, and a p-type GaAlN / BP Similarly, a second intermediate buffer layer 102 made of a p-type Ga _x Al _1-x N / BP superlattice layer is interposed between the cladding layer 16 and the p-type BP contact layer 18. Otherwise, it is the same as the reference example of FIG.

The element manufacturing method and manufacturing conditions are basically the same as those of the reference example shown in FIG. Specifically, the n-type cladding layer 1
4 is a Si-doped G having a carrier concentration of 1 × 10 ¹⁷ / cm ³
For the a _0.4 Al _0.6 N / BP layer, the first intermediate buffer layer 101 is doped with Si and doped with a carrier concentration of 1 × 10 ¹⁷ / c.
A Ga _0.5 Al _0.2 N / BP superlattice layer having an m ³ thickness of 0.1 μm and a p-type cladding layer 14 formed of a Mg-doped Ga _0.4 Al _0.6 N / BP layer having a carrier concentration of 1 × 10 ¹⁷ / cm ^3. The second intermediate buffer layer 102 is doped with Mg,
G having a carrier concentration of 1 × 10 ¹⁷ / cm ³ and a thickness of 0.1 μm
An element was formed as a _0.8 Al _0.2 N / BP superlattice layer.

In the device of this reference example , green light laser oscillation was confirmed at the temperature of liquid nitrogen, and a low threshold current density and operating voltage were obtained.

FIG. 15 shows the device of the reference example of FIG.
Is a reference example in which the intermediate buffer layers 101 and 102 made of the same superlattice layers in the reference example of FIG. 14. In this reference example , the same green light laser oscillation can be obtained.

The above method of providing an intermediate buffer layer is also effective when a GaAlBNP mixed crystal layer is used for the cladding layer and the active layer. In this case, the GaAlN / BP superlattice layer or GaAlBNP mixed crystal layer is used as the intermediate buffer layer. May be used.

FIG. 16 shows a semiconductor laser of such an embodiment. This is n n for the device of the embodiment of FIG.
A first intermediate buffer layer 111 made of an n-type GaAlBNP mixed crystal layer was provided below the type cladding layer 41, and a second intermediate buffer layer 112 made of a p-type GaAlBNP mixed crystal layer was provided above the p-type cladding layer 43. Things.

Specifically, for example, the n-type cladding layer 41 and the n-type cladding layer 43 are made of Ga _0.2 Al _0.3 B _0.5 N _0.5
If a P _0.5 mixed crystal layer, the first intermediate buffer layer 111
Is a Ga _0.4 Al _0.1 B _0.5 N _0.5 P _0.5 mixed crystal layer having a Si concentration of 1 × 10 ¹⁷ / cm ³ and a thickness of 0.1 μm. 1 × 10 ¹⁷ / cm ³ , thickness 0.1μ
m of Ga _0.4 Al _0.1 B _0.5 N _0.5 P _0.5 mixed crystal layer. The device manufacturing method is basically the same as that of the embodiment of FIG.

According to this embodiment, the same effect as in the previous embodiment can be obtained.

In each of the above embodiments and the reference example in which the intermediate buffer layer is provided, the second intermediate buffer layer on the contact layer side is formed only in the current confinement region. It is also possible to provide.

FIG. 17 shows such a reference example , in which an upper intermediate buffer layer 102 ′ is provided on the entire surface of the p-type cladding layer 16 with respect to FIG.

Regarding the intermediate buffer layer of each of the above embodiments and the reference example , when the superlattice layer was used and when the mixed crystal layer was used, the average composition was changed in the film thickness direction to make the band gap continuous. In this case, the transition region of the band gap becomes smoother and more effective.

It has already been mentioned that one problem with the semiconductor laser of the present invention is that there is no suitable substrate of good quality that can achieve lattice matching. On the other hand, in addition to providing a buffer layer of the same quality as the light emitting layer as described above, a method of subsequently removing the substrate used for crystal growth is also effective.

FIG. 18 shows a semiconductor laser of such a reference example . This is basically the same as the device of the reference example shown in FIG. 1, and then the substrate 11 and the GaP buffer layer 12 are removed. The removal of the GaP substrate 11 and the GaP buffer layer 12 is performed, for example, by etching with a 2% bromine methyl alcohol solution after mechanical polishing.

According to this embodiment , the stress concentration on the light emitting layer portion is reduced by removing the substrate and the buffer layer.
Stable operation is obtained. Specifically, an element having a resonator length of 300 μm was formed according to this reference example , and green light laser oscillation was confirmed by a pulse operation at a liquid nitrogen temperature and a pulse width of 100 μsec. The threshold current density was about 50 kA / cm ² . No laser oscillation was observed at room temperature, but LED
In the mode operation, stable light emission was confirmed for 100 hours or more.

FIGS. 19 and 20 show a case where the same substrate removal is applied to the elements of the reference example of FIG. 3 and the embodiment of FIG. 4, respectively. Similar effects can be obtained by these reference examples and embodiments.

In the above embodiments and reference examples , p
Although a current blocking layer that performs current blocking using an n-junction is provided, current blocking is possible without providing such a special current blocking layer. Hereinafter, a reference example will be described.

FIG. 21 shows a semiconductor laser of such a reference example . In this structure, a p-type BP contact layer 18 is formed without forming the n-type BP current blocking layer 17 based on the structure of the reference example of FIG. According to such a method, since a selective growth step is not required,
The process is simplified, leading to cost reduction.

In this structure, in the region where the p-type cladding layer 16 and the p-type BP contact layer 18 are in direct contact, no current flows due to a large potential barrier due to band discontinuity, and the p-type GaAlN / BP Current flows as a result of smooth band transition only in the portion where the intermediate buffer layer 103 made of a superlattice layer is interposed. Therefore, the current is substantially constricted. In addition, since the p-type cladding layer 16 is processed into a stripe-like convex shape, a difference in refractive index occurs in the lateral direction, and light is confined.

An element having a resonator length of 300 μm was constructed according to this reference example , and a pulse width of 100 μm
Green laser oscillation was confirmed by the pulse operation of c. The threshold current density was about 70 kA / cm ² . Although the threshold current density was high, it was confirmed that good transverse mode control was performed. The operating voltage was as low as about 5V.

FIG. 22 is a reference example in which a similar current confinement structure is applied to the device of the embodiment of FIG. According to this reference example , similar laser oscillation is possible.

FIG. 23 further shows that the p-type cladding layer 16 is not processed so as to have
This is a reference example in which the aAlN / BP intermediate buffer layer 102 is selectively etched and patterned into stripes, and a p-type BP contact layer 19 is formed on the entire surface. This reference
By example, and not effect of light confinement, current confinement is performed, it is possible to laser oscillation.

The compound semiconductor material used for the light emitting layer in the semiconductor laser of the present invention has both the low ionicity of BP, the ZB structure, and the wide band gap of GaAlN, but acceptor impurities enter the GaAlN layer. And N escapes, and high concentration p-type doping is difficult. In order to solve this problem, it has been found that it is effective to selectively dope impurities into only the low ionic BP layer with respect to the p-type when forming the GaAlN / BP superlattice layer. GaAlN
When the entire / BP superlattice layer is doped with a p-type impurity, Ga
In addition to the self-compensation effect in the AlN layer, many defects are generated and eventually a high carrier concentration cannot be obtained as a whole.
If only the BP layer is selectively doped with a p-type impurity, the BP layer is not affected by the self-compensation effect and has no defects.
As a result, it is considered that many of the doped impurities are effectively activated as carriers.

FIGS. 24A and 24B are conceptual views showing such a doping method. (A) shows the case of p-type doping, and (b) shows the case of n-type doping. Each of them has a superlattice structure in which BP layers and GaAlN layers are alternately stacked at a predetermined period. In (a), only the BP layer is doped with Mg, and in (b), only the GaAlN layer is doped with Mg.
i is doped.

Such growth of the superlattice structure semiconductor layer and selective doping of impurities can be performed by the MOCVD apparatus shown in FIG. A GaAlN / BP superlattice layer is formed under the same conditions as the superlattice layer formation in the reference example already described. Si is used for the GaAlN layer for the n-type and BP for the p-type.
The layers were each doped with Mg. Ga for n-type
Although the AlN layer and the BP layer may be doped with Si at the same time,
BP has a very large effective mass and is not suitable for n-type doping. With this selective doping, both p-type and n-type
It was confirmed that a superlattice semiconductor film having a carrier concentration on the order of ¹⁸ / cm ³ was obtained. Therefore, this selective doping is effective when manufacturing the semiconductor laser of the present invention.

At the time of p-type doping, a slight amount of Mg may be mixed in the GaAlN layer.

The present invention is not limited to the above embodiment. In embodiments, the average composition _{Ga x Al y B 1-xy} N
When expressed in _z P _1-z, but the x + y = 0.5, it is also possible to use other compositions. However, in the case of the light emitting layer, x + y
Is smaller than 0.5, the band structure is changed from a direct transition type to an indirect transition type, which is not preferable.

[0073] Further Te embodiments odor mentioned above, as the raw material gas, triethyl gallium (T as the Ga raw material
EG), triethyl aluminum (TE)
A) and B raw materials such as tolmethylboron (TMB) can be used, and N raw materials other than hydrazine (N ₂ H ₄ ), Ga (C ₂ H ₅ ) ₃ .NH ₃ , G
_{a (CH 3) 3 · N} · (CH 3) , such as _3, can be used organic metal compound called an adduct. Further, in the above embodiment, the first conductivity type is n-type, and the second conductivity type is p-type.
Although the case of the type has been described, these may be reversed.
Other materials can be selected for the electrode material.

In addition, the present invention can be variously modified and implemented without departing from the spirit thereof.

[0075]

As described above, according to the present invention, a practical short-wavelength optical semiconductor laser can be realized by using a compound semiconductor material having a wide band gap.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view showing a semiconductor laser using a GaAlN / BP superlattice layer according to a reference example of the present invention.

FIG. 2 is a diagram showing a configuration of an MOCVD apparatus used for manufacturing the laser shown in FIG.

FIG. 3 is a cross-sectional view showing a semiconductor laser according to another reference example using a GaAlN / BP superlattice layer.

FIG. 4 is a sectional view showing a semiconductor laser according to an embodiment using a GaAlBNP mixed crystal layer.

FIG. 5 is a sectional view showing a semiconductor laser of a reference example from which a buffer layer is omitted.

FIG. 6 is a sectional view showing a semiconductor laser of a reference example using a GaAlN / BP superlattice layer as a buffer layer.

FIG. 7 is a sectional view showing a semiconductor laser of a reference example using an SiC substrate.

FIG. 8 is a sectional view showing a semiconductor laser of a reference example using an AlBNP layer as a current blocking layer.

FIG. 9 is a sectional view showing a semiconductor laser of a reference example using an AlBNP layer as a current blocking layer.

FIG. 10 is a sectional view showing a semiconductor laser according to an embodiment using an AlBNP layer as a current blocking layer.

FIG. 11 is a sectional view showing a semiconductor laser of a reference example using a GaN layer as a current blocking layer.

FIG. 12 is a sectional view showing a semiconductor laser of a reference example using a GaN layer as a current blocking layer.

FIG. 13 is a sectional view showing a semiconductor laser according to an embodiment using a GaN layer as a current blocking layer.

FIG. 14 is a cross-sectional view showing a semiconductor laser of a reference example in which an intermediate buffer layer is interposed above and below a cladding layer.

FIG. 15 is a sectional view showing a semiconductor laser according to a reference example in which an intermediate buffer layer is interposed above and below a cladding layer.

FIG. 16 is a sectional view showing a semiconductor laser according to an embodiment in which an intermediate buffer layer is interposed above and below a cladding layer.

FIG. 17 is a sectional view showing a semiconductor laser of a reference example in which an intermediate buffer layer is interposed above and below a cladding layer.

FIG. 18 is a sectional view showing a semiconductor laser of a reference example from which a substrate is removed.

FIG. 19 is a sectional view showing a semiconductor laser of a reference example from which a substrate is removed.

FIG. 20 is a sectional view showing the semiconductor laser of the embodiment from which the substrate has been removed;

FIG. 21 is a sectional view showing a semiconductor laser of a reference example in which an n-type current blocking layer is omitted.

FIG. 22 is a sectional view showing a semiconductor laser of a reference example from which an n-type current blocking layer is omitted.

FIG. 23 is a sectional view showing a semiconductor laser of a reference example in which an n-type current blocking layer is omitted.

FIG. 24 is a diagram for explaining selective doping useful in the present invention.

[Explanation of symbols]

 Reference Signs List 11 GaP substrate 12 n-type GaP buffer layer 13 n-type BP buffer layer 14 n-type GaAlN / BP superlattice clad layer 15 undoped GaAlN / BP superlattice active layer 16 p-type GaAlN / BP superlattice clad layer Reference Signs List 17 ... n-type BP current blocking layer 18 ... p-type BP contact layer 19, 20 ... electrode 41 ... n-type GaAlNP mixed crystal cladding layer 42 ... undoped GaAlBNP mixed crystal active layer 43 ... p-type GaAlBNP mixed crystal cladding layer 51 ... n-type GaAlN / BP superlattice buffer layer 61 ... SiC substrate 81 ... n-type AlBNP current blocking layer 91 ... GaN current blocking layer 101 ... n-type GaAlN / BP superlattice intermediate buffer layer 102 ... p-type GaAlN / BP superlattice intermediate buffer layer 111 ... n-type GaAlBNP mixed crystal intermediate buffer layer 112 ... p-type GaAlBNP mixed crystal Intermediate buffer layer

──────────────────────────────────────────────────続 き Continuation of the front page (56) References JP-A-64-21991 (JP, A) JP-A-53-20882 (JP, A) JP-A-63-202083 (JP, A) JP-A-63-202083 43387 (JP, A) JP-A-56-59699 (JP, A) (58) Fields investigated (Int. Cl. ⁷ , DB name) H01S 5/00-5/50 H01L 33/00

Claims (2)

(57) [Claims] 1. A semiconductor laser having a pn junction, wherein a light emitting layer is formed on a single crystal substrate by using Ga _x Al _y B _{1 -xy} N _z P
_A double heterostructure portion is formed between the p-type and n-type cladding layers of _1-z, and the p-type
A semiconductor laser characterized in that a part of a mold cladding layer is formed in a rib structure protruding in a convex shape, and a current blocking layer is formed on both sides of the rib structure. 2. The semiconductor laser according to claim 1, wherein said substrate is made of SiC.