JPH0387019A - Manufacture of iii-v compound semiconductor element - Google Patents

Abstract

PURPOSE:To well control a steep doping process by a method wherein, as dopant source of magnesium, an organic magnesium compound having a sufficiently high vapor pressure and no memory effect at all with another compound used as an additive thereto is adopted. CONSTITUTION:III-V element compound semiconductor is manufactured using an organic metal compound containing magnesium with other compound used as an additive thereto as a magnesium dopant source. As for the additive, octalkyl aluminum magnesium represented by a formula of Mg (Al(R)4)2 where R represents an alkyl radical or a methyl radical is used. Besides, the said additive may be a pentalkyl aluminum magnesium represented by another formula of RMg (Al(R)4) where R represents the alkyl radical. Furthermore, the formation process of a p type III-V compound semiconductor layer is performed at the deposition temperature not exceeding 650 deg.C. The formation process performed at this temperature can restrain the decomposition of trimethyl aluminum so as to reduce the mixed Al amount to almost negligible level. In such a process, it is recommended that the deposition temperature will not exceed 550 deg.C.

Description

[Detailed Description of the Invention] [Object of the Invention] (Industrial Field of Application) The present invention relates to a method for manufacturing a ■-v group compound semiconductor device, and more specifically, a p-type semiconductor device doped with magnesium.
- A method for manufacturing a group V compound semiconductor device, including a step of forming a group V compound semiconductor layer by metal organic vapor phase epitaxy.

(Prior Art) When producing a p-type ■-v group compound semiconductor by metal organic chemical vapor deposition (MOCVD), zinc is usually used as a p-type dopant. Zinc has very good doping properties as a dopant for GaAs, but
When used as a dopant for ■-v group compound semiconductors containing phosphorus such as nP, Ga I n AI P, etc.
Not only is the uptake rate low, but the activation rate is also low. Moreover, the diffusion rate is too fast and the controllability is poor.

Therefore, attempts have been made to use beryllium or magnesium as a p-type dopant in place of zinc. However, although beryllium exhibits good properties as a p-type dopant in molecular beam epitaxial growth, its organic compound exhibits strong toxicity, so M
Application to OCVD methods must be avoided.

Organic compounds of magnesium have fewer toxicity problems than organic beryllium compounds. As such organic magnesium, alkylmagnesium compounds such as dimethylmagnesium and diethylmagnesium can be considered, but these alkylmagnesium compounds have very strong self-association properties and do not have the effective vapor pressure necessary for MOCVD.

In addition, biscyclopentadienylmagnesium (CpzMg), which has a cyclopenta ring and has a relatively high vapor pressure, is used, but there is also a memory effect that remains in the equipment (the dope source attached to the reaction tube may reappear during subsequent processing). It is very difficult to control doping, and it is not possible to ensure the steepness of a concentration change of three orders of magnitude or more within 0.1 μm, which is normally required for devices. Furthermore, in order to increase the vapor pressure, there is an example of using bismethylcyclopentagenylmagnesium ((CH3)2Cp2Mg), which has a methyl group introduced into the cyclopenta ring, but a sufficiently steep concentration change cannot be obtained. Not yet.

(Problems to be Solved by the Invention) As described above, magnesium alkyl compounds have a low vapor pressure, and magnesium compounds having a cyclopenta ring have a high memory effect, making doping with good controllability difficult.

Therefore, the present invention makes it possible to perform p-type doping with excellent controllability by organometallic vapor phase epitaxy by using an organomagnesium compound with effective vapor pressure and no memory effect as a magnesium doping source. An object of the present invention is to provide a method for manufacturing a -V group compound semiconductor device.

[Structure of the Invention] (Means for Solving the Problems) The method for manufacturing a ■-v group compound semiconductor device according to the present invention includes:
When forming a p-type ■-V group compound semiconductor layer doped with magnesium by organometallic vapor phase epitaxy, addition of an organometallic compound containing magnesium (organomagnesium compound) and another compound as a magnesium doping source. Characterized by the use of objects.

(Effect) According to research conducted by the present inventors on various organomagnesium compounds, the memory effect of C92Mg is as follows:
It has been confirmed that this is not an essential problem common to organomagnesium compounds, but a problem specific to magnesium compounds having a cyclopenta ring. That is, the memory effect can be avoided by using an organomagnesium compound that does not have a cyclopenta ring as a doping source. Regarding vapor pressure, even if an organomagnesium compound does not have sufficient effective vapor pressure on its own, it can be made to have sufficient vapor pressure by forming an adduct with another compound. It turned out that it can be done. As mentioned above, dimethylmagnesium is a solid, has very strong self-association properties, and has a low vapor pressure, making it unsuitable as a magnesium dope source. However, by forming adducts with other compounds, dimethylmagnesium can be It was found that self-association was dramatically suppressed and vapor pressure increased. for example,
Mg(All(
CH3) 4) 2 (octamethylsialuminum monomagnesium) Furthermore, CH3(MgAj2
(CH9)4 (pentamethylaluminummagnesium) has melting points of 39°C and 54°C, respectively;
Sufficient steam pressure can be ensured.

Note that Mg (AN (CHs) a ) 2 and CH.

When using an adduct containing aluminum such as (MgAII (CHI)a), the constituent element aluminum is incorporated into the semiconductor layer at the same time as magnesium, but it is not used when growing a ■-v group semiconductor containing aluminum. The doping source is very small compared to the aluminum compound used, so it does not pose a problem.

Thus, in the present invention, magnesium-doped p
When forming a Type ■-V group raw conductor layer, steep doping can be achieved by using an adduct of an organomagnesium compound with a sufficiently high vapor pressure and no memory effect and other compounds as a magnesium doping source. can be performed with good reproducibility.

(Example) Hereinafter, the present invention will be explained in more detail with reference to Examples.

FIG. 1 shows an MOCVD apparatus used for manufacturing the ■-v group compound semiconductor device of the present invention. This device has reaction tubes 11, 12 and 13 made of quartz,
Necessary raw material gas is taken in from the gas inlet located at the top of each. These reaction tubes 11, 12 and 1
3 is vertically attached to one chamber 14 through its upper cover. The substrate 15 is placed on a graphite susceptor 16, placed so as to face the openings of the reaction tubes 11, 12, 13, and heated to a high temperature by an external high frequency coil 17. The susceptor 16 is attached to a quartz holder 18, and the drive shaft 1 is connected to the drive shaft 1 through a magnetic fluid seal.
9 to the bottom of each reaction tube 11, 12, 13, for example
It is capable of moving at high speeds of about seconds. The drive is performed by an externally installed computer-controlled motor. A thermocouple 20 is placed in the center of the susceptor 16.
is placed to monitor the temperature directly below the board.

A slip ring is used in the cord portion to prevent twisting due to rotation. The reaction gas is pushed out by the fast downflow of hydrogen gas from the upper jet port 21, and is exhausted from the exhaust port 22 by the rotary pump while mixing with each other is suppressed as much as possible.

By using Konoyosu MOCVD equipment, a desired raw material gas is flowed through each reaction tube 11, 12, 13, and the substrate 15 is moved by a computer-controlled motor, so that any lamination period and any composition can be obtained. A multilayer structure can be fabricated on the substrate 15. With this method, sharp concentration changes that cannot be obtained with the gas switching method can be easily achieved. In addition, with this method, there is no need to switch the reaction gas at high speed to create a steep hetero-interface, so the problem of slow decomposition speed of the raw material gases NH and PH can be solved by setting the gas flow rate low. It can be solved.

Now, using the MOCVD apparatus shown in FIG. 1, the following ■-v group compound semiconductor device was manufactured.

The raw materials used were trimethylgallium (TMG) and trimethylaluminum (TMG) as organic compounds of group metals.
A),) Using ethylboron (TEB) and trimethylindium (TM I ), using phosphine (PHi), arsine (ASH3), and ammonia (NH:1) as group V hydrides, and using silane ( S
iH4), Mg(Ag(CH3)4)2 were used.

FIG. 2 is a schematic cross-sectional view of a ■-V group compound semiconductor device manufactured by the above method at a substrate temperature of 750'C, a reaction tube internal pressure of 25 Torrs, a growth rate of 3 μm/hour, and a reaction tube flow rate of 70 cm/sec. This device has a p-type GaAs substrate (I x 1019 cm-') on which a p-type GaAs buffer layer 32 (0.5 μm, I x 10
"clll-') p-type Ino, 5 (Ga11
). , S P layer 33 (1 μm, lXlOIscm-')
, n-type 1 no, s (G a 1-x Al2 x
) o, s P layer 34 (1 μys, I x 10
"c+n-') is formed on the layer 34, and an n-type GaA
s contact layer 35 (2us, I x 10”am
-3) is formed.

Ohmic electrodes 36 and 37 are formed on both sides of the element, respectively. These ohmic electrodes are connected to a power source 38.

When the obtained wafer was separated and a diode was fabricated, the identification factor was close to 1 and good IV characteristics were exhibited. In addition, M near the p-n junction interface
SIMS analysis of g revealed that the concentration was constant in the 9 layers, no diffusion to the 0 layer was observed, and the
A steep concentration change of 103 or more was observed during the 0.00 min. The carrier concentration was able to maintain a constant value of lXIQ"cm-" in the nine layers.

FIG. 3 is a sectional view showing a schematic structure of a semiconductor laser device manufactured by the method of the present invention.

This laser device has an n-type GaAs substrate 41, on which an n-type GaAs buffer layer 42 and an n-type GaAs buffer layer 42 and an n-type GaAs buffer layer 42 are formed.
A type 1nGaP buffer layer 43 is formed. On the buffer layer 53 is an n-type InGaAj7P based rad layer 4.
4.1nGaP active layer 45 and p-type 1nGaAJ7
A double heterojunction structure consisting of P-based rad layers 46, 47, and 48 is formed. Here, the cladding layer 47
is a low A, 17 composition and acts as an etch stop layer. Further, the cladding layer 48 is processed into a striped shape, thereby forming striped ribs in the p-type cladding layer. On the cladding layer 48, p-type 1
An nGaA, IIP intermediate bandgap layer 49 is formed. On the side of the double heterojunction, n-type GaA
An s current blocking layer 51 is formed on which a p-type GaA layer 51 is formed.
A contact layer 52 is formed. Further, a metal electrode 53 is formed on the upper surface of the contact layer 52, and a metal electrode 54 is formed on the lower surface of the substrate 41. In this structure, current confinement is performed by an intermediate bandgap layer 49 and a current blocking layer 51, and a leading wave is performed by a cladding layer 48 formed in a striped mesa.

The wafer thus obtained was separated and the cavity length was 250μ.
- When a laser device was fabricated, the threshold current was 40
Good characteristics were obtained with mAs differential quantum efficiency of 20% per side. The optical output increased linearly to 10i1i or more according to the driving current, and exhibited good current-light output characteristics without kinks. Furthermore, both the far-field and near-field images were unimodal, indicating that good mode control was performed.

The operating voltage is 2. IV as low as 1.0000
An extremely long life span of hours was achieved. In this manner, by performing good doping with good controllability, it was possible to obtain a semiconductor laser with good reproducibility that simultaneously achieves a low threshold value, high output power, and high reliability.

FIG. 4 is a cross-sectional view of a semiconductor laser device obtained by the method of the present invention, similar to the above.
This is different from the laser device shown in FIG. 3 in that the contact layer 50 is used.

Furthermore, a laser device having the structure shown in FIG. 5 can be similarly manufactured by the method of the present invention.

6 to 8 show cross-sectional views of other compound semiconductor devices manufactured by the method of the present invention. These elements are composed of GaAIBNP-based materials. In order to fabricate these devices, the substrate temperature is 850 to 115°C.
0℃, pressure 0.3 atm, total flow rate of raw material gas 1 liter/
The gas flow rate was adjusted so that the growth rate was 1 μI/hour. The specific flow rate of each raw material gas is TEBlxlO-6
mol/min, TMA5X10-7 mol/min, TEG5X1
0-7 mol/min, phosphine 5 x 10-' mol/min, ammonia 1 x 10-3 mol/min. In addition, GaA
The typical stacking period when producing the NN/BP superlattice layer is 20 layers, the thickness ratio of the nitride layer and the boride layer is 1:1, and there is no special indication in the following examples. As long as it is set to this value. Although values other than this can be used, if the ratio of the layer thickness of GaAj7N to BP of the light emitting layer becomes smaller than 1, the band structure changes from a direct transition type to an indirect transition type, and the luminous efficiency decreases. Also, the stacking period is not limited to the above value, but if it exceeds 50, the localization of electrons and holes becomes noticeable and the conductivity decreases.
It is desirable to set the following cycle.

The laser device shown in FIG. 6 has an n-type GaP substrate 71, on which an n-type GaP buffer layer 72 and an n-type BP buffer layer 73 are formed. On the buffer layer 73 is n-type G.
a, Al2+-N/BP multilayer cladding layer 74, undoped Gas A111-x N/BP multilayer active layer 75, and p-type Ga.

Aj? A double heterojunction consisting of an IN/BP multilayer cladding layer 76 is formed. In addition, the rad layer 7
An n-type BP current blocking layer 77 is formed on the layer 6 so as to leave a striped portion in the center thereof. Current blocking layer 77
A p-type BP contact layer 78 is formed above and covering the striped exposed surface of the cladding layer 76 . moreover,
A metal electrode 79 is provided on the upper surface of the contact layer 78 , and a metal electrode 79 is provided on the upper surface of the contact layer 78 .
A metal electrode 80 is formed on the lower surface of each. In this structure, since the current blocking layer 77 is formed around the lower convex portion of the contact layer 78, current confinement and leading wave can be realized in a self-aligned manner.

A more specific manufacturing process for the laser device shown in FIG. 6 is as follows. Using the MOCVD apparatus shown in FIG. 1 and under the conditions described above, an n-type GaP substrate 71 (Si-doped,
IQ 18cm-3), an n-type GaP buffer layer 72 (Si doped, I
m) n-type BP buffer layer 73 (Si doped, 1×1
0I7CI11-31μm), n-type Ga 0.4A
D7 o, b N/BP multilayer cladding layer 74 (S
i-doped, lXl0"0111-' 1 μm),
Undoped Ga o, s AD o, s N/B
P multilayer film active layer 75 (0.1 μl 1 l), and p
Type Gao, a AIIo, b N/BP multilayer cladding layer 76 (Mg doped, 1×1018 (to)-31μ
M)'s double heterounihara was grown. Next, on the cladding layer 76, a 5i02 film mask is formed in a stripe shape with a width of 5μ by thermal decomposition of silane gas and photolithography, and an n-type BP current blocking layer 77 (Sl-doped, IX
1018 am-'1 μs) only on the upper surface of the cladding layer 76 by MOCVD, and then SiO2
The membrane was removed. Next, a p-type BP contact layer 78 (Mg doped, 1XIO"cffI" 31 μm
) grew. After that, the A u / Z n electrode 79 is placed on the contact layer 78 according to the normal electrode mounting method.
and the A u/G e electrode 8 on the bottom surface of the substrate 71.
By depositing 0, a laser wafer having the structure shown in FIG. 6 was obtained.

When the resulting wafer was cleaved to fabricate a laser device with a cavity length of 300 μ-, the pulse width was 1 at liquid nitrogen temperature.
Green light laser oscillation was confirmed with a pulse operation of 00 microseconds. The oscillation threshold current density was approximately 50 kA/c-. It also operated stably for over 100 hours.

FIG. 7 shows a modification of the semiconductor device shown in FIG. 6.

The cladding layer 76 of the double heterojunction similar to that shown in FIG. 6 is processed into a convex shape, and controls the transverse mode by adding a difference in refractive index in the transverse direction to equal polarization. On the cladding layer 76, there is n-type BP except for at least a part of the convex portion.
A current blocking layer 77 is formed. The rest of the structure is the same as that in FIG. In the structure shown in FIG. 7, since the current blocking layer 77 is formed around the convex portion of the second conductivity type cladding layer 76, current confinement and refractive index type leading wave can be realized in a self-aligned manner.

To manufacture the device shown in FIG. 7, a similar double hetero wafer was grown using the MOCVD apparatus shown in FIG. 1 under the same conditions as the device manufacturing conditions shown in FIG. A 5i02 film mask is formed in a stripe shape with a width of 5 μm by thermal decomposition and photolithography, and the cladding layer 76 is
A striped mesa with a width of 3 μm was formed by etching. Next, an n-type BP current blocking layer 77 (Si doped, 1
x101s (up to 11 μι)) was selectively grown only on the upper surface of the cladding layer 76 by MOCVD. After that, S
The iO2 film was removed, and a p-type BP contact layer 78 (Mg doped, I x 10'' (7) - 31.5 μm) was grown. After that, electrodes were attached, and a laser with the structure shown in FIG. 7 was formed. Got the wafer.

When the resulting wafer was cleaved to fabricate a laser device with a cavity length of 300μ, the pulse width was 1 at liquid nitrogen temperature.
Green light laser oscillation was confirmed with a pulse operation of 00 microseconds. The oscillation threshold current density was approximately 70 kA/c-. Although the threshold current density was somewhat high, a single-peak far-field pattern was confirmed, indicating that good transverse mode control was performed. It also operated stably for over 100 hours.

FIG. 8 shows a light emitting device (
FIG. On the p-type GaP substrate 91, p
A p-type GaP buffer layer 92 and a p-type BPI buffer layer 93 are sequentially formed, and on top of this a p-type GaAIIN/BP superlattice layer 94 and an undoped GaAfIN/BP superlattice layer 95.
, n-type GaAIIN/BP superlattice layers 96 are sequentially stacked, and an n-type GaN contact layer 97 is further formed thereon. Ohmic electrodes 98 on both sides of the cable wafer
99 is formed. This LED can also be manufactured in the same manner as above.

p-type ■-V by Mg-doped organometallic vapor phase growth
When forming a group compound semiconductor layer, Mg is used as a raw material for Mg.
(Ai) (CH3) a) 2, CHI(M
When using gA11 (CHI)4), the constituent element Ai7 is taken in at the same time as Mg. Therefore A
Care must be taken when growing a ■-V group compound semiconductor that does not contain l. According to research conducted by the present inventors, it has been found that contamination of AI can be effectively avoided by performing vapor phase growth within a certain temperature range.

The data will be explained below.

Figure 9 shows the M
FIG. 3 shows the substrate temperature dependence of the precipitated amounts of g and AfI. Mg
Compounds have low decomposition temperatures and are unstable, so Mg precipitates at relatively low temperatures, whereas AI compounds have high decomposition temperatures and are stable, so Ai7 begins to precipitate at relatively high temperatures and reaches saturation. .

FIG. 10 shows the growth temperature dependence of the amount of Aj7 mixed in with respect to the amount of Mg doping when 1 nP with Mg is grown using Mg (AN (CHi) 4)2 as a raw material.

Afi crowding begins to decrease below 650℃, and at 570℃
There was a sharp decrease in the following. In particular, 0.1% at 550℃
It can be used in ordinary opto-electronic devices without any problem. That is, if growth is performed at a low temperature of 650° C. or lower, the decomposition of trimethylaluminum is suppressed and the contamination of Ag is reduced to almost negligible level. This result corresponds to the decomposition temperature of the raw material, and the same was true for the growth of GaAs and the like.

Therefore, as explained in the previous example, when a p-type ■-V group compound semiconductor layer is grown in the vapor phase using an Mg compound containing Afi, in order to suppress the incorporation of Afi into the growth layer, the growth temperature must be adjusted. The temperature is preferably set at 650°C or lower, preferably 55°C or lower. In particular, this limitation on the growth temperature is effective when it is desired to obtain a ■-v group compound semiconductor layer that does not contain Ag.

FIG. 11 is a structural diagram showing a schematic structure of a semiconductor laser device according to an embodiment of the present invention. In the figure, 101 is an n-type 1nP substrate, and an n-type 1nP cladding layer 102 (St doped, IXI
A Ga1nAsP active layer 103 (0,
1 μm), and p-type InP cladding layer 104 (
Mg doped, I x 1018cm-'1 μm)
Lumesa stripes are formed by laminating layers. Both sides of the mesa are buried with high-resistance InP buried layers 105 (1 μm), and on the top of the mesa, cladding layer 104 and buried layer 105, is a p-type GaInAsP: + contact layer 10106 (doped, I× 1018 mark-3065
μm) is formed. Then, Au/AuGe is formed on the lower surface of the substrate 101 as an n-side electrode 107, and Au/AuGe is formed on the contact layer 106 as a p-side electrode 108.
Z n is provided.

All of the above ■-V group compound semiconductor layers were epitaxially grown by the MOCVD method. The raw materials include group II organic metals (trimethyl gallium (TMG), trimethyl indium (TMI)) and V hydrides (phosphine (PH)).
, ), arsine (A s Hs )),
As a doping raw material, silane (SiH4) M
g(AN(CH3)4)2 was used. The growth conditions were a substrate temperature of 620°C and a reaction tube pressure of 200 Torr.
, growth rate 3μ1w/h1 flow rate in reaction tube 70cm/
Created with see.

When the obtained wafer was separated and a semiconductor laser with a cavity length of 250 μm was created, the oscillation wavelength was approximately 1.54 μm.
, and single mode oscillation characteristics were obtained.

Although the present invention has been described above with reference to preferred embodiments, the present invention should not be limited to these embodiments. For example, in the above embodiment, Mg (
Al2 (CH3) 4 ) 2 was used, but generally the formula Mg (All) (R) 4 ) 2 (where R
is an alkyl group) octaalkylaluminum magnesium (for example, Mg(AN (C2H5)
a) Magnesium pentaalkylaluminum (for example, CH3 (M g
A, Q (CH3) a ), (C2Hs)Mg
(1! (C2H5) 4 ) can be used in exactly the same manner. Furthermore, as a doping source for Mg, Mg
(N (CH3) 4 ) 2 , CH3(MgN(C
H3)4) Also adducts of organomagnesium compounds and ethylenediamine can be used.

Further, the present invention is applicable to GaAs-based, InP-based, GaAl-based,
InGaAsP system, InGaAjP system, InGaAj
Semiconductor lasers and LEDs made of lAs-based, InGaAs-based, LnAIAs-based, and other various ■-V group compound semiconductor materials.

It can be applied to the production of various elements such as FET and HBT.

Further, as the MOCVD raw materials, triethyl gallium (TEG) can be used as the Ga raw material, triethyl aluminum (TEA) can be used as the l raw material, and trimethyl boron (TMB) or diborane (B2H6) can be used as the B raw material. In addition to hydrazine, Ga (C2H5) and NH can also be used as N raw materials.
s, Ga CCH3) sN・(CHI
) Organometallic compounds that are adducts containing nitrogen can also be used.

In addition, various modifications are possible without departing from the gist of the present invention.

[Effects of the Invention] As described above, according to the present invention, p-type
- When forming a group V compound semiconductor layer by organometallic vapor phase epitaxy, by using an adduct of an organomagnesium compound and another compound as a magnesium doping source, steep magnesium doping can be performed with good controllability and low Achieve threshold, high output, and high reliability at the same time■
-V group compound semiconductor devices can be manufactured with good reproducibility.

[Brief explanation of drawings]

FIG. 1 is a diagram showing a metal organic vapor phase growth apparatus suitable for carrying out the present invention, FIG. 2 is a diagram showing a diode according to one embodiment, and FIG. 3 is a diagram showing a semiconductor laser according to another embodiment. 4 is a diagram showing a semiconductor laser according to another embodiment obtained by modifying the device shown in FIG. 3, FIG. 5 is a diagram showing a semiconductor laser according to another embodiment obtained by modifying the device shown in FIG. 3, 6 is a diagram showing a semiconductor laser according to another embodiment, FIG. 7 is a diagram showing a semiconductor laser according to another embodiment obtained by modifying the element in FIG. 6, and FIG. 8 is a diagram showing an LED according to another embodiment. , Figure 9 is M
FIG. 10 is a diagram showing the dependence of the amount of Mg and Ag precipitated from the G raw material on the substrate temperature. FIG. 10 is a diagram showing the growth temperature dependence of the amount of Ap mixed in with respect to the Mg doping amount. FIG. 11 is a semiconductor laser according to another example. FIG. 11゜12゜3...Reaction tube, 15゜31゜41゜71゜91゜1...Substrate.

Claims (5)

[Claims] (1) A method for manufacturing a III-V compound semiconductor device including a step of forming a magnesium-doped p-type III-V compound semiconductor layer by organometallic vapor phase epitaxy, which contains magnesium as a magnesium doping source. 1. A method for manufacturing a III-V compound semiconductor device, characterized in that an adduct of an organometallic compound and another compound is used. (2) III- according to claim 1, wherein the adduct is octaalkylaluminiummagnesium represented by the formula Mg(Al(R)_4)_2 (where R is an alkyl group).
A method for manufacturing a group V compound semiconductor device. (3) The method for manufacturing a III-V group compound semiconductor device according to claim 2, wherein R is a methyl group. (4) The III according to claim 1, wherein the adduct is pentaalkylaluminiummagnesium represented by the formula RMg(Al(R)_4) (wherein each R is an alkyl group).
- A method for manufacturing a group V compound semiconductor device. (5) I according to claim 1, wherein the step of forming the p-type III-V compound semiconductor layer is performed at a growth temperature of 650° C. or lower.
A method for manufacturing a II-V group compound semiconductor device.