TWI306646B - Microelectromechanical systems (mems) device including a superlattice - Google Patents

Description

'1306646 VIII. If there is a chemical formula in this case, please disclose the chemical formula that best shows the characteristics of the invention. IX. Description of the invention: [Related application]

This application claims the priority of the US patent provisional application (provisional appiication) f 6〇/685,995, which was filed in May, 1955, and this 谙 4 4 4 4 4 $ $ $ $ 巾 巾 巾 巾_92, 422, ^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^ U.S. Patent No. 6, 958, 486, U.S. Patent No. 6, </ RTI> </ RTI> U.S. Patent No. 10/603,696 and &amp; _, 621, filed on Jun. 26, 2003. In the case of a number of consecutive applications for the two applications, the overall disclosure of each of the above applications is hereby incorporated by reference. TECHNICAL FIELD OF THE INVENTION The present invention relates to the field of semiconductors and, more particularly, to semiconductor elements including superlattices and related methods. [Prior Art] $, such as the structure and technology for enhancing the mobility of charge carriers in order to improve the performance of semiconductor components, has been proposed. For example, U.S. Patent Application Serial No. 2003/0057416 to Qurie et al. discloses that 矽, 石夕-锗, (sil^〇n-germanium), and reiaxe (j siiic〇n) and including the original Strained material layers, such as imper-free zones, which cause poor performance. The biaxial deformation __ stmin formed in the upper layer changes the mobility of the carrier. And to make higher speed and / or lower power components. Fitzgerald 1306646, in the application for publication No. 2003/0034529, discloses a CMOS inverted state (CMOS invertei*;) which is also based on the technique (Stramed SlllC〇ntechno10). U.S. Patent No. 6,472,685, issued to U.S. Patent No. 6, 472,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,, The valence band is subjected to tensile deformation (tensile has a small equivalent mass (effeCtive is deleted by the electric field of the second IS), and it is confined in its second layer, so it can be identified as η通i MOSFETs have a high degree of kinetics. A superlattice is disclosed in U.S. Patent No. 4,937,204, the entire disclosure of which is incorporated herein by reference. The semiconductor layer ^, in the j single layer (, secret (4)) structure, is alternately grown in the form of insect crystal growth _ secret day ny ^. Its towel social eccentric direction is straighter than the super-lattice U.S. Patent No. 5,357,119, the disclosure of which is incorporated herein by reference in its entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire disclosure U.S. Patent No. 5,683,943 discloses an M for enhancing mobility. 〇SFET, which includes _fj (channel layer), the channel layer includes a bismuth alloy and a second substance, and the second is now, the Wei bai bai mask layer is in the stretch p6, and the 262-year-old snail reveals Quantum Mqu_m w, ', package s has two shielding areas (barnerregion) and a book sandwiched between the shielding areas, J length into a semi-conductive layer, each of which is made up of thicknesses in S six g fc is composed of S1O2/S1 single layer. There is also a thicker section of the material between the shielding areas. 2,00 years Μ 6th online _ physics and materials group and process (Applied &amp Add (10) 峋 391 - 402 pages, an article entitled "Phenomenainsilie () nnan () Stmetoe deuces), Tsu reveals a semiconductor of yttrium and oxygen _ atom Superconductoi-atomic superlattice (SAS). This Si/〇 superlattice structure is useful as a quantum and luminescent element. The special job shows how to make and test it.

Hi 2 3 (10) nee diGde). In the diode structure ί (10). The direction of motion is vertical, that is, perpendicular to the level of the SAS. The SAS disclosed in the document 1306646 may comprise a semiconductor layer separated by adsorbed species such as oxygen atoms and c〇 molecules. The 矽' grown outside of the absorbed oxygen monolayer is described as an epitaxial layer having a relatively low defect density. One of the SAS structures contains a 1.1 nm thick tantalum portion, which is about eight tantalum layers, and the tannin portion of the other structure has a thickness that is twice the thickness. Physics Review Letters, Vol. 89, No. 7 (2002 ^ August 12), an issue by Luo et al. entitled "Chemical Design of Direct Gap Luminescence" ("Chemical Design of The article "Direct-Gap Light-Emitting Silicon") further discusses the luminescent SAS structure of Tsu.

A shielded construction block of thin bismuth and oxygen, carbon, nitrogen, phosphorus, antimony, arsenic or hydrogen, which can be used for vertical flow, is disclosed in the International Application Bulletin of Wmig, ysu and Lofgren et al., WO 02/103,767 A1. The current through the crystal lattice is reduced by more than four powers of the power level (f〇ur eight ontoofmagnitudeh, its insulating layer/shield layer can allow the deposition of low-defective serpentine at the place adjacent to the insulating layer.

Mears et al., in the published U.S. Patent Application Serial No. 2,347,52, discloses that the aperiodic photonic band-gap (APBG) can be applied to electronic tape gap engineering (elec^). Onjc bandgap engineering). In particular, it is disclosed in the application that material parameters, for example, positions with minimum values, equivalent masses, etc., can be adjusted to achieve a new aperiodic characteristic of the desired band structure. Sexual material. Other parameters, such as electrical COnductlvlty' thermal conductivity and dielectric permittivity or magnetic permeability, are all claimed to be designed into the material. SUMMARY OF THE INVENTION A microelectromechanical system (MEMS) component 'which can include a substrate and a scoop 可 movable member that is supported by the substrate. Furthermore, the at least one movable part has a plurality of stacked layer groups of superlattices, and each layer of the superlattice is a plurality of stacked base semiconductor single layers, and At least one non-semiconductor adjacent to the crystal lattice of one of the base semiconductor portions, more particularly, the superlattice may be a piezoelectric superlattice. The MEMS component may further comprise a driver (this generation 1*) from the bottom 6 1306646 for driving the at least one movable component. Also, the first conductive contact (electrjcally c〇nductive contact) can be carried by the at least one of the 'i', and the second conductive contact can be carried by the substrate, and is connected to the first guide Coffee (10) (4), use "apply a bias to the superlattice, which moves less moving parts. Furthermore, the superlattice - some parts are separated from the substrate. 2. Also, MEMS components can be further Included is a dielectric anchor carried by the substrate, and wherein the at least one movable component can be supported by a dielectric anchor. For example, the base semiconductor can include a stone eve, and the at least half In particular, the at least one non-semi-monolayer may comprise a thickness of 3. Further, the substrate swivel portion opposite the adjacent layer 2 of the at least superlattice may be chemically bonded. In the following description of the specification of the present invention, the following description will be described in detail, and the preferred embodiment of the present invention is shown in the drawings. However, this can still be implemented in many different forms, because The invention is not limited to the embodiment of the invention: relatively, 'these embodiments are provided only to make the present payment (10) complete, and to enable the skilled person to fully Invention 1 Scale] In the entire description of the present invention, the same pattern is used for the same or equivalent elements, and the (four) (four) symbols are used in different embodiments. Similar to the f. The invention relates to controlling the properties of a semiconductor material at the atomic or molecular level to enhance the semi-conductive red-like properties. The invention also relates to the identification, creation and use of Wei (IV) in order to It is applied to the conductive path of the swivel element. 1306646 The application of the present application, the theory shows that the equivalent mass of certain superlattice load carriers disclosed herein is also reduced by this reduction The result is that the higher the electricity, but the four people at the same time declare that the invention of the invention 4 should not be limited to this theory. This field of the blue field _ literature towel, the green definition of the quality of the transfer is described as 曰月. a measure of the improvement in equivalent mass Degree, the applicant uses "guided CWductivityreciproealeffectivemasstensor»), with \\^ and 1^ respectively representing electrons and holes, which are defined as: Σ J&quot; (Vk though, ")); ^kE(k,n)).^^ }l^FjIld3k £&gt;£f BZ Q£

For the definition of electrons, and -Σ i (Vk paper ")),. (Vk£(k,„)). ^XE(Kn), EF,T) E&lt;EF BZ ^ Q£ Λ Σ i(l- /XE(k,n)』F,r))i/3k t&lt;EF BZ 5 is the hole, defined 'where the system is f *Dirac distribution (Fermi-Dimc Ε / Ϊ 能量 energy (Ferml coffee (4), T is the temperature, E(k,n) is the energy of the electron in the state of Ϊί and the ηth band, and the subscript i and j are corresponding to the flute. Applicants' definition of the conductivity inverse equivalent mass tensor is such that the corresponding component of the conductive mass tensor of the material has a larger value, and its conductivity = component II is also larger. Again, the following theory is mentioned, and the description of the singularity of the needles is recorded. The conductive properties of the materials are such that the charge carriers are typically transported in a preferred direction. The reciprocal of the number of items 'herein referred to as the conductive equivalent mass. In other words - describing the characteristics of the semiconductor material structure, the conductivity of the aforementioned electron/hole, etc. β and the calculation in the direction in which the carrier is intended to be transmitted The result is available Identifying the materials that have been enhanced. Tian, Lizheng. An example of such a super-crystal application that can be selected for a specific purpose for a specific purpose can be applied to a MEMS ( 1306646^25 material in MEMS) component 20 (discussed in further detail below). Some applications have been developed, • relatively small components such as adjustable capacitors (plus accompaniment capacit〇1^, Open _switehes) etc. are all required applications. Such components can advantageously be fabricated using MEMS processes, where very small moving parts utilize a deposition, electroplating or other additional process, and selective etching, and/or A combination of other lift-off techniques is made on a substrate. Such techniques are typically made into a structure that will eventually be partially released or suspended to allow mechanical movement. Typically, this is the result of electrostatic forces. Electrostatic forces can be generated by applying a voltage to the conductors that are separated from each other. A common MEMS structure is made up of a conductive beam (conductiVe be The switch provided by am) is anchored at one end, and its opposite end can be connected to the adjacent contact by applying an electrostatic force;

Los Santo et al., entitled "Ubiquitous Wireless Connectivity: Part 1 Manufacturing," IEEE Microwave Magazine, December 2004, in which IEEE Microwave Magazine The application of various MEMS components is set forth herein as a reference for the present invention. This paper states that MEMS technology can be applied to RF (Rpy microwave systems because passive components are available), such as switches, switchable (two-state) capacitors, and adjustable capacitors (switchable (two-state) capacitors) Varactors, inductors, transmission lines, and resonators. Therefore, these components can be used in wireless products, at home, in the portable, and in space, such as handsets, base stations, and satellites. • Referring first to Figures 1 and 2, an illustration (i.e., a switch) of a MEMS device 2A including one of the superlattice 25 is shown. It should be noted that, as will be understood by those skilled in the art based on the disclosure herein, although the description describes a preferred embodiment of a MEMS switch, the super-sound lattice 25 can be advantageously applied to many aspects. One of the physical bases for initiating a MEMS is the inverse piezoelectric effect, as described in the previously described papers such as L. Saili〇s. The mechanical deformation of the layer is applied across a piezoelectric layer. The result of this deformation can open a closed, off-hook "11 ° conventional method of manufacturing MEMS switches to form a relay (ca = ^ rstructure) to form a relay. Although this structure can provide the required work, but However, there are difficulties in manufacturing. For example, in the second MEMS device, the superlattice μ is electrically cut (4) and (4) is provided with a piezoelectric ^ 5 = E] V ^ S component - a reciprocable component. , the Gana component 2〇 further awards no G 3 — substrate 21, such as a ferroconductor substrate (eg, 矽, s〇I, etc.). If *1306646 = = below and near the grid 25, the person can turn In the embodiment of the present invention, the second conductive contact switch is used to drive the superlattice 25 - and the second "5" 24 is the right heart to check the surname to the ?? 'what contact 30, 31 connected to the drive bias contact 3G = S ^ t then, when the crane 11 circuit 24 through the deformation, its connection to the button machine 55 厳, * The F Team F signal] is conducted between the first and second signal lines 28, 29. Further; 26 &gt; jiisssssr^ (exP〇sed) It is possible to form a dielectric layer such as Si〇2 on the semiconductor material. Referring additionally to Figures 3 and 4, the superlattice 25 has a configuration, and the JL is transmitted over the shoulders. The knife is deposited with a known atomic or molecular layer. A plurality of layer groups arranged in a form (the layer group is also referred to, and the basesemiconductor monolayer 46 may be the most clear by reference to the self-seeking 3 green layer, and a band modification layer 306646 on it is fine (four), The freshly modified layer 50 is in the crystal lattice of the base semiconductor portion of the phase, and also in the upper end of the H or in the case of # s ΐ ίίίί in the top semiconductor single layer, 仍=ίϋί The group continues to be scared and the same as the skilled artisan understands that in the adjacent groups 45a-45n, in the case of 50, some of them will be combined to non-semiconductor atoms (ie, this ί ίίίϊ 50%#/^ ° 5 to obtain a version of the pink (single) single layer, which is referred to as a non-semiconductor single layer or a semi-conductive fiir, which can be either singly or singly _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ The charge carriers in the direction of the base semiconductor unit are arranged in comparison with the helmets. The millennium is tested by the level craftsman. "In this ϊ ΙΪΑΐ; ΙΪΑΐ;?: ϊ; 5 格 25 victory Μ: Λ*Compared with the carrier mobility. Of course, all the above measures ^ ^ 41;; - the cover layer 52 is located above the top layer group coffee of the superlattice 25. The cover layer a may include the Ί 306646 π川主50 early layers. Other thicknesses can also be used. 卞 导 ί 底 由 由 由 由 由 由 由 1 1 1 1 1 1 1 1 1 1 1 1 1 1 V V V V V V V 。 。 。 。 。 。 。 。 。 。 。 。 。 The semi-degenerate semiconductor of the Jane family - of course, one of the J. The 疋 basal half body can include, for example, Shi Xi and 锗 at least 齓 V 5 or to do S and ho ho fresh 4 kinds ' Γ Γ 稳Art Yi Ϊ i hot 4 and the continuation of the original K to wait i order 12: period of the process of fluorine ¥ τ · with the gas ο than the system ftor, the oxygen 1UC has -t body ^and with the guide § In the case of the example, the half-fmi is also set to #-se and the actual turn|row|2 t into the T1-' guide in the half of the path. Also 5 is not made. The layer of the ab lead is changed to a semi-finished product, the lly non-chemical zone is fixed, and the err, which can be selected, is lacquered. It should be noted that Ding... Township-e ^ecuIar 1 ah). It should also be phonetic, i ί half i; r = iiii; material and in the case of "(4) and / or in the case of different materials, as the acquaintance of the craftsman can understand, it is not necessarily It is a situation that can be understood by those skilled in the art of semi-filled atomic deposition. In the present description, "see 0" and other ranges can also be used in a specific embodiment. Occupied by the fact that niobium and oxygen are currently widely used in general semiconductor processes, the materials described in the present invention can be used immediately. Atomists are also the technology that is widely used today. Thus, as is conventional in the art, the semiconductor element is immediately utilized and implemented in the superlattice 25 disclosed herein. The Applicant still declares that the scope of the present invention should not be limited to its theory. For example, the Zhao a image is a Si/o superlattice, and the number of layers of the Shi Xi single layer should preferably be seven layers or less; The day y band can be common or relatively uniform over the entire range in order to obtain the desired 4/1 repeat structure. For Si/O, the model indicates that the hole has better mobility. For example, the calculated electrons (as for the overall block 12 1306646 0^12 4/1 〇; 6 : he may be advantageous in terms of the conductor element, but in the case of the i-crystal S | The second towel, the effect, is more important than the non-excessive attention, as is appropriate for the skilled person. However, the special type and the MEMS layer of the superlattice in the position of the element Group 45 can still maintain substantially one or more of the undoped 曰曰 25 同时 同时 同时 图 图 图 ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' 。 。 。 。 。 。 。 。 。 。 The other shows that the 3/1/5^^^ super 曰f is the bottom semiconductor part 46a, which has three, and five singular layers of the J part. This combination mode "the whole ϊ 25 3 == 〒 25 'in terms of its charge carrier dynamics 2 = layer 3 ^ The other structural parts not specifically mentioned in the figure are similar to those in the above figure: This is not discussed repeatedly. In some of the component embodiments, all of the base semiconductor portions 46a-46n of the superlattice 25 may have a thickness that is the same number of monolithic laminates. Among other embodiments, at least The thickness of the base semiconductor portions 46a-46n may be a different number of monolithic laminates. In other embodiments, the thickness of all of the base semiconductor portions 46a-46n may be a different number of monolithic laminates. Figures 6A through 6C show the energy band architecture calculated using Density Functional Theory (DFT). It is well known in the art that DFT generally underestimates the absolute value of the band gap. The energy bands can be offset by the appropriate "scissorscorrection". However, the shape of this band is recognized to be far more reliable. The vertical energy axis should be recognized here. Considered below. Figure 6A shows the bulk of the block (the solid line is shown) and the 13 1306646 Π 图 超 超 ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' 两者 ' The direction of the band can be read in accordance with the direction of the general unit cell of Si (〇〇1) direction 曰 系 曰 曰 4 / 1 sl / 0 structure of the unit cell (unitcell) instead of Si generally shows Si Conductive band The expected value of the small value. In the figure, the (_ shi is is in accordance with the (110) and (_110) directions of the general unit wafer of Sl. It is used in the constitutive and constitutive elements; the energy band of S1 in the L diagram is indicated by the indication They are in the 4/1 'si/o configuration k's s in the reciprocal lattice directions.

Si&quot;?&quot;, compared with the overall block nostalgia, the conduction energy band of the 4/1 Si/〇 structure is the most = point (G), and the minimum value of the bond energy band is The curvature of the minimum value of the conduction energy band of the structure and &amp; the larger curvature of the ίίίίί ' 是 is because the extra oxygen layer introduces the energy band separation line caused by the disturbance) and the 4/1 Si/〇 supercrystal Grid 25 (dashed line), both constructed by Ζ点ίίΐίΖΐϊ. The age of the towel is (10)) in the direction of the stone (solid line) and the 5/1/3/1 as shown in Figure 5, such as the superlattice 25, calculated from the shank and the z point Curve with construction Ξί «/3/1^0 structure symmetry, calculated in the (100) and (010) directions of the shovel 槿si / 〇 example ι, conduction ^ belt mm 疋 isotropic Sexual. Note that in 5/ι/3/ι ζ ί ί ί 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此The equivalent quality 詈 ^ ^ sf different 'can still be properly compared and judged too "" is the heart - = array unit work theory, but not limited to this theory, to the previous ίίΓΐίΐ: produce piezoelectric properties Superlattice semiconductor material = will be described in detail to form a dust cell Q domain or film (mm) that can be applied to the MEMS device. After the film is formed and metallized, in addition to the film in Fig. 1306646, it is filled to 70. More particularly, the s〇I substrate includes an electrical HH "half _ (eg, Shi Xi) layer 72 on the dielectric layer. - 塾 | = such as '=) layers 71 and 73 are formed on the semiconductor layer 72, followed by a nitride (such as milk nitrogen), and a light mask and etching step to form a trench 7 〇, 儿, 儿Yu, 70 «125 MMM 74

Sl? 3 is expected. Then use the secret engraving to remove the nitriding and release side, _ into the upper (four) M surface till its iS ίΐϊ similarly use the deposition step to fill the strain in these and one of the discussed below

The Lti 1^ wire is slightly the same, and the (four) layer 71 is similar to the dielectric layer 81, 91, etc.). As such, these elements are described only as they appear for the first time. The single crystal superlattice semiconductor material is formed on the trench 8 and the polycrystalline superlattice semiconductor material 87 is formed on the layer 84 (for the above-mentioned Η 7A 7F two-noise point), the process display of FIG. 8A_8F The class is ready for i4 lines and ^1 layer of gold ΐίί (^ 9^, can be used along the - each side of the ditch - separation lateral pressure i i ft = t9F shown in the process is similar to Figure 7a - 7f shows that the entire trench superlattice 95 is selectively deposited on the trench wall 9〇, and another process shown by s ί ϊ is shown in Figure i〇a_i〇f. The semiconductor substrate 1〇2 is initiated, compared to a S0I substrate. Others 15 1306646 iUi if it, before the selective deposition of the superlattice 105, precede the tf of the trench 100 (eg 'Si〇2) (Fig. 10B) Similar to Figure 8, the two are the two passes of Tugou Chan, the difference between which is that the superlattice 115 is selectively deposited on the wall, and the wall is filled with a ditch. The other is similar to the one shown in the figure. The process displayed, the difference between which is the addition of the process shown in Fig. =, 夕曰曰石夕〉儿积. All the process procedures shown in Figure 9-12 , f Sii mg) before the formation of the piezoelectric superlattice material has appeared = the skilled person understands the case in the above-mentioned system and the description of the invention reveals the inner valley, when it can be inferred that the ride is _ Many changes and other examples. Therefore, it should be understood that the scope of the present invention should not be limited to fine, and other modifications, Wei and other Wei cases, should still belong to the present month &lt; 猾狎In arm. [Simple description of the diagram] Recognition. 1 is a cross-section 切 cut out of line 2-2 of the MEMS component of a micro-electromechanical system (mems) component including a superlattice according to the present day and the month. Ge Ke should be a large-scale enlarged cross-sectional view of the embodiment, the overall block in the super-crystal 曰曰mi knowing technology and the energy band structure calculated in the §6B figure. ^. 曰曰si/ 0^ 81/0 ^ MEMS component ^ super ' it is not produced according to the invention in -=^ΐΪί; η square ί display according to the invention made in the application - Fang I Xianer this coffee application in - Figure (10) A series of schematic cross-sectional views showing yet another method of fabricating a superlattice for use in a 1306646 MEMS component in accordance with the present invention. Figures 11A-11F are a series of schematic cross-sectional views showing the fabrication of a crucible in accordance with the present invention. Another method of superlattice in MEMS elements. &amp; Figures 12A-12G are a series of schematic cross-sectional views showing yet another method of fabricating a superlattice in a MEMS element in accordance with the present invention. 20 micro-electric system (MEMS) component 21 substrate 22 trench 23 dielectric anchor 24 driver circuit 25 superlattice 25 superlattice 26 first conductive contact 27 second conductive contact 28 first signal line 29 Two signal line 30 bias contact 31 bias contact 32 conductive line / metallized 33 conductive /metallization 34 oxide layer 45 layer group 45a-45n group 45a'-45n' group 46 base semiconductor single layer 46' base semiconductor single layer 46a-46n base semiconductor portion 46a'-46n' base semiconductor portion 50 Band modification layer 50' can be modified layer 52 cap layer 52, cap layer 70 trench 71 dielectric layer 72 semiconductor layer 17 1306646 '73 塾 oxide layer 74 nitride layer 7 5 superlattice 76 dielectric 80 ditch 81 Dielectric layer 82 semiconductor layer 83 pad oxide layer 84 nitride layer 85 superlattice 86 dielectric 87 polycrystalline superlattice semiconductor material 88 oxide layer φ 90 trench 91 dielectric layer 92 semiconductor layer 93 pad oxide layer 94 Nitride layer 95 superlattice 96 dielectric 100 trench 102 semiconductor substrate 103 pad oxide layer 104 nitride layer 105 superlattice. 106 dielectric climbing 110 trench 111 dielectric layer t. 112 semiconductor layer 113 pad oxidation Particle layer • 114 nitride layer 115 superlattice 116 dielectric 117 polycrystalline superlattice semiconductor material 118 oxide layer 120 trench - 122 semiconductor layer. 123 pad oxide layer 124 nitride layer 18 1306646 125 superlattice 126 127 polycrystalline superlattice semiconductor material oxide layer 10, application Scope: 1 · A microelectromechanical system (MEMS) component, comprising: a substrate; and a second movable part, which is bound by the substrate, and includes a group of layers containing a plurality of stacks - a superlattice, and each layer group of the superlattice comprises a plurality of stacked base semiconductor monolayers of 2 base semiconductor portions, and at least one of the tantalum lattices adjacent to one of the base semiconductor portions A non-semiconductor MEMS device according to claim 1, wherein the superlattice comprises a piezoelectric superlattice. 3. The MEMS component of claim 1 further comprising a driver carried by the substrate for driving the at least one movable component. 4. The MEMS component of claim 1, further comprising a first conductive contact carried by the at least one moving component, and a conductive contact carried by the substrate, and the first Alignment of the conductive contacts. A MEMS component according to claim 1 of the scope of the patent, further comprising a first radio frequency (RF) signal line connected to the first conductive contact, and connected to the second conductive connection One of the second RF signal lines. 6. The MEMS component of claim 1 further comprising a pair of bias contacts for applying a bias voltage to the superlattice to move the at least one movable component: 7. A MEMS component of the first aspect, wherein portions of the superlattice are separated from the substrate. Two

Claims (1)

1306646 125 superlattice 126 dielectric 127 polycrystalline superlattice semiconductor material 128 oxide layer ten, patent application scope: 1 · A microelectromechanical system (MEMS) component, comprising: a substrate; and ^ two movable parts , which is bound by the substrate, and includes a superlattice comprising a plurality of layers of layers, and each of the superlattice groups comprises a plurality of stacked bases of 2 base semiconductor portions a semiconductor monolayer, and at least one non-semiconductor monolayer in the crystal lattice of one of the base semiconductor portions, wherein the superlattice comprises a piezoelectric super Lattice. 3. The MEMS component of claim 1 further comprising a driver carried by the substrate for driving the at least one movable component. 4. The MEMS component of claim 1, further comprising a first conductive contact carried by the at least one moving component, and a conductive contact carried by the substrate, and the first Alignment of the conductive contacts. A MEMS component according to claim 1 of the scope of the patent, further comprising a first radio frequency (RF) signal line connected to the first conductive contact, and connected to the second conductive connection One of the second RF signal lines. 6. The MEMS component of claim 1 further comprising a pair of bias contacts for applying a bias voltage to the superlattice to move the at least one movable component: 7. A MEMS component of the first aspect, wherein portions of the superlattice are separated from the substrate. The MEMS component of the first application of the first aspect of the invention is the MEMS component of the first aspect of the invention, wherein the substrate is a MEMS component as in the first application of the patent scope, J: at least - the single layer contains oxygen. The conductor comprises a non-semiconductor UiU;TM component, wherein the at least-non-conductor 13. As in the MEMS element of the scope of claim i, the conductor portions are all the same number of single layer thicknesses. 〃 〇 〇 〇 14. 14. 14. 14. 14. 14. 14. 14. 14. 14. 14. 14. 14. 14. 14. 14. 14. 14. 14. 14. 14. 14. 14. 14. 14. 14. 14. 14. 14. 14. 14. 14. 14. 14. 14. 14. 14. 14. 14. 14. 14. 14. 14. 14. 14. 14. 14. 14. 14. 14. 14. 14. 14. 14. 14. 14. 14. 14. 14. 14. 14. 14. 14. 14. 14. 14. 14. 14. 14. 14. 14. 14. 14. 14. 14. 14. 14. 14. 14. 14. 14. 14. 14. 14. 14. 14. 14. 14. 14. 14. f ^Please refer to the MEMS component of the first item of the patent range, in which the opposite base semiconductor portion in the group of adjacent layers is chemically sized; ;^16·Microelectromechanical system (MEMS) components, including: _substrate; = movable part supported by the substrate; - point, which is the second electrical contact carried by the at least - movable part, which is carried by the substrate' And aligning with the second electrical contact = the device is carried by the substrate to drive the small... a movable component comprising a plurality of stacked layer groups exceeding one grid = Hai 20 1306646 superlattice Each layer group includes a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer defined adjacent to a crystal lattice of one of the base semiconductor portions. 17_ As for the MEMS component of the item μ of the patent scope, the superlattice comprises a piezoelectric superlattice. The MEMS component of claim 16 further comprising a first radio frequency (RF) signal line connected to one of the first conductive contacts, and a second RF signal connected to one of the second conductive contacts line. 19 = The component of the patent application range of $16, further comprising a pair of bias contacts connected by the superlattice and coupled to the driver. 2 〇Ϊ Ϊ Ϊ 脏 脏 , , , , , , , , , , , , , , , , 超 超 超 超 超 超 超 超 超 超 超 超 超 超 超 超 超 超 超 超 超 超 超 超 超 超 超 超 超The dielectric quality is chosen. The MEMS element of claim 16, wherein the base semiconductor is encapsulated, and wherein the at least one non-semiconductor monolayer comprises oxygen. Package 3 23 ΐ ί Γΐ 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第