CN102442631A - Micro-electromechanical device and composite base material used in one micro-electromechanical device - Google Patents
Micro-electromechanical device and composite base material used in one micro-electromechanical device Download PDFInfo
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- CN102442631A CN102442631A CN2010105095071A CN201010509507A CN102442631A CN 102442631 A CN102442631 A CN 102442631A CN 2010105095071 A CN2010105095071 A CN 2010105095071A CN 201010509507 A CN201010509507 A CN 201010509507A CN 102442631 A CN102442631 A CN 102442631A
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Abstract
The invention provides a micro-electromechanical device and a composite base material used in one micro-electromechanical device. The micro-electromechanical device comprises a first silicon structure layer and a second silicon structure layer, wherein the second silicon structure layer is fixedly connected with the first silicon structure layer. The first silicon structure layer comprises a rotary rod piece and a first plane, and a first crystal lattice direction and a second crystal lattice direction are defined on the first silicon structure, the Miller index of the first crystal lattice direction is (100), the Miller index of the second crystal lattice direction is (110), the first crystal lattice direction and the second crystal lattice direction are parallel to the first plane, the rod piece has a rotation shaft direction, and the rotation shaft direction is parallel to the first plane and crossed with the second crystal lattice direction. Thereby, torsional rigidity of the rod piece in the micro-electromechanical device can be improved.
Description
Technical field
The relevant a kind of microelectromechanicdevices devices of the present invention has a microelectromechanicdevices devices that can reverse rod member especially in regard to a kind of.
Background technology
Generally speaking, silicon wafer on the insulating barrier (silicon on insulator SOI) comprises two-layer silicon substrate (siliconsubstrate), and the lattice direction of each layer silicon substrate is unanimity, and the consistent main cause of lattice direction has two:
One, general inventionthe semiconductor industry is observed the SEMI specification, and the SEMI specification to the 200mm wafer definition to be its lattice direction be < 100>direction (200mm orientation of notch axis for < 110>± 1 °).So the 200mm wafer that on market, can obtain is large with < 100>direction, the silicon of other lattice direction then need carry out special purchasing and can obtain.
Two, alignment system mostly being arranged on semiconductor equipment, all is to be contraposition reference with otch (notch) concerning the 200mm wafer fabrication system, so its lattice direction of SOI wafer of institute of the semiconductor equipment system of the standard of employing ability output is consistent.
When silicon substrate is made semiconductor device or microelectromechanicdevices devices on adopting these insulating barriers, receive the influence of lattice direction, just cause problems such as the electrical speciality of device is difficult to promote, etch quantity is uncontrollable easily.
For solving above-mentioned disappearance to improve the product yield, industrial circle proposes the improvement scheme in succession, for example japanese patent application publication No. JP 6151887 and U.S. Patent Publication US 2004/0266128.In these two pieces of patents, the two-layer silicon substrate of silicon substrate has different lattice direction on the insulating barrier, and this measure can improve the electric characteristics of semiconductor device and the disappearance of etching aspect.
Yet; For microelectromechanicdevices devices; The improvement of engineering properties (for example torsional rigid or flexural rigidity) is even more important, but above-mentioned each piece patent revealer of institute only relates to the electrical characteristic of semiconductor or its relevant processing procedure control, does not touch the correlation technique content with the microelectromechanicdevices devices field; So that the common knowledge the knowledgeable in present micro electronmechanical field still can't use the engineering properties that existing silicon substrate process technique is improved microelectromechanicdevices devices.
In view of this, on conventional silicon-substrate, improving at least a engineering properties of microelectromechanicdevices devices now, is industry problem demanding prompt solution for this reason.
Summary of the invention
A purpose of the present invention is to provide a kind of microelectromechanicdevices devices, and on the basis of existing conventional wafer material and procedure for processing, it is not enough to solve convention microelectromechanicdevices devices torsional rigid or flexural rigidity; Or the disappearance of other engineering properties; The functional requirement that cooperates different microelectromechanicdevices devices, the silicon wafer of configuration different crystalline lattice direction is to promote the engineering properties of its microelectromechanicdevices devices; A kind of microelectromechanicdevices devices for example is provided, and it has preferable the reversed rod member of a torsional rigid.
For reaching above-mentioned purpose, the microelectromechanicdevices devices that the present invention disclosed comprises: one first silicon structure layer and one second silicon structure layer.The first silicon structure layer has coilable first rod member and one first plane; The definition of the first silicon structure layer has several first lattice direction and several second lattice direction, and the Miller index of first lattice direction is < 100 >, and the Miller index of second lattice direction is < 110 >; Parallel first plane of first lattice direction and second lattice direction; First rod member has a rotor shaft direction, parallel first plane of rotor shaft direction, and staggered with second lattice direction.The second silicon structure layer, the first silicon structure layer that is permanently connected, the second silicon structure layer have one and strengthen structure and one second plane, and second plane parallel, first plane.
Another object of the present invention is to provide a kind of composite base material that is applied to microelectromechanicdevices devices; On the basis of existing conventional wafer material and procedure for processing; At least two silicon wafers in conjunction with the different crystalline lattice direction; With the engineering properties of the follow-up microelectromechanicdevices devices of correspondence, the tensor (tensor) in the rigid matrix (stiffness matrix) for example.
For letting above-mentioned purpose, technical characterictic and the advantage can be more obviously understandable, hereinafter be elaborated with the preferred embodiment conjunction with figs..
Description of drawings
Fig. 1 is the stereogram of first preferred embodiment of microelectromechanicdevices devices of the present invention;
Fig. 2 is another visual angle stereogram of first preferred embodiment of microelectromechanicdevices devices of the present invention;
Fig. 3 A is the generalized section of a silicon wafer of first preferred embodiment employing;
Fig. 3 B is the generalized section of another silicon wafer.
Fig. 4 A is the lattice direction sketch map of first silicon substrate on the silicon wafer that adopts of first preferred embodiment;
Fig. 4 B is the lattice direction sketch map of second silicon substrate on the silicon wafer that adopts of first preferred embodiment;
Fig. 5 be Miller index < 100>silicon substrate rigidity and lattice direction concern sketch map;
Fig. 6 A is the direction sketch map that is formed at the first silicon structure layer of first silicon substrate in first preferred embodiment;
Fig. 6 B is the direction sketch map that is formed at the second silicon structure layer of second silicon substrate in first preferred embodiment;
Fig. 7 is the stereogram of second preferred embodiment of microelectromechanicdevices devices of the present invention;
Fig. 8 A is the direction sketch map that is formed at the first silicon structure layer of first silicon substrate in second preferred embodiment;
Fig. 8 B is the direction sketch map that is formed at the second silicon structure layer of second silicon substrate in second preferred embodiment;
Fig. 9 be Miller index < 110>silicon substrate rigidity and lattice direction concern sketch map;
Figure 10 A is the direction sketch map that is formed at the first silicon structure layer of another first silicon substrate in second preferred embodiment;
Figure 10 B is the direction sketch map that is formed at the second silicon structure layer of second silicon substrate in second preferred embodiment; And
Figure 11 be Miller index < 111>silicon substrate rigidity and lattice direction concern sketch map.
The specific embodiment
The present invention proposes a microelectromechanicdevices devices; The part assembly of microelectromechanicdevices devices can reverse, and uses and reaches a specific mechanical purpose, for example; Microelectromechanicdevices devices of the present invention can be applicable to devices such as micro mirror device, angular displacement sensor (for example top wheel appearance) or Micropump Pu, but is not limited in this.In following explanation, each embodiment of microelectromechanicdevices devices of the present invention will be example with the micro mirror device all, but non-in order to limitation the present invention.
See also Fig. 1 and Fig. 2, it is the stereogram of first preferred embodiment of microelectromechanicdevices devices of the present invention.Microelectromechanicdevices devices 1 is the twin shaft micro mirror device, comprises that one first silicon structure layer 11 and one second silicon structure layer, 12, the first silicon structure layer 11 and the second silicon structure layer 12 mainly are to be processed by monocrystalline silicon, and can mix or deposit other material.The second silicon structure layer 12, the first silicon structure layer 11 that is permanently connected; The mode of reaching 11,12 fixed connection of two silicon structure layers has multiple; For example through directly link (directly bonding) of Fan Deerli (Vender Walls force); Or through hydrophily link modes such as (hydrophilic bonding), but the present invention is not limited to above-mentioned connected mode.
The first silicon structure layer 11 has coilable second rod member 112 of coilable first rod member 111,, a mirror surface structure 113 and one first plane 114.Mirror surface structure 113 directly links to each other with first rod member 111; Mirror surface structure 113 links to each other with second rod member 112 indirectly; And second rod member 112 links to each other with first rod member 111 indirectly, and 114 on first plane is perpendicular to the thickness direction of first rod member 111, second rod member 112 and mirror surface structure 113.
Because first rod member 111 and second rod member 112 can reverse; Therefore first rod member 111 has one first rotor shaft direction 1111; It is vertical each other with second rotor shaft direction 1121 that second rod member 112 has one second rotor shaft direction, 1121, the first rotor shaft direction 1111, and parallel first plane 114.
Doing the time spent when mirror surface structure 113 receives external force (for example electromagnetic force), is to point to first rotor shaft direction 1111 like the moment that external force caused, and mirror surface structure 113 can relative first rotor shaft direction 1111 be swung the first therefore torsional deflections of rod member 111; Like the moment that external force caused is to point to second rotor shaft direction 1121, when mirror surface structure 113 and 1121 swings of simultaneously relative second rotor shaft direction of first rod member, 111 meetings, and the second therefore torsional deflections of rod member 121.
The second silicon structure layer 12 has one and strengthens structure 121 and one second plane 122, strengthens structure 121 and links to each other with some part of the first silicon structure layer 11, to strengthen the mechanical strength of these parts, makes these parts not yielding.With present embodiment, the first silicon structure layer, 11 part that link to each other with reinforcement structure 121 comprise the mirror surface structure 113 and first plane 114, also can spread to other reinforcement enforcement aspect yet know this art person, so do not give unnecessary details in addition in this.
Like Fig. 1 and shown in Figure 2; Strengthen structure 121 definition orthogonal one first bearing of trend 1211 and one second bearing of trend 1212 are arranged; First bearing of trend 1211 is parallel with first rotor shaft direction 1111 of first rod member 111, and 1,212 second rotor shaft direction 1121 with second rod member 112 of second bearing of trend are parallel.Second plane 122 is parallel to first plane 114, and perpendicular to the thickness direction of strengthening structure 121.
Seeing also shown in Fig. 3 A, is the generalized section of a silicon wafer 2.The microelectromechanicdevices devices 1 of present embodiment is produced by silicon wafer 2.Of the present inventionly at least onely be characterised in that the silicon wafer 2 that forms microelectromechanicdevices devices 1 is composite base materials; This composite base material system is made up of at least two silicon substrates of the different lattice direction of tool; Comprise that with present embodiment silicon wafer 2 one first silicon substrate (silicone substrate), 21 and 1 second silicon substrate, 22, the first silicon substrates 21 and second silicon substrate 22 are permanently connected.The fixed connection mode of two silicon substrates 21,22 has as stated and directly links through Fan Deerli, or through modes such as hydrophily links.
Perhaps, shown in the silicon wafer 2 ' generalized section of Fig. 3 B, optionally form an insulating barrier 23 between first silicon substrate 21 and second silicon substrate 22.Insulating barrier 23 can be silica < silicon dioxide >, and the silicon wafer 2 ' with this insulating barrier 23 be silicon wafer on the insulating barrier (Silicon On Insulator, SOI).
See also Fig. 4 A and Fig. 4 B, the Miller index (Miller index) on the surface 211 of first silicon substrate 21 and the surface 221 of second silicon substrate 22 is all < 100 >.First silicon substrate 21 definition in addition has four Miller indexs of parallel surfaces 211, first lattice direction and four second lattice direction that the Miller index is < 110>for < 100 >, and second silicon substrate 22 also has four the 3rd lattice direction < 110>and four the 4th lattice direction < 100>of parallel surfaces 221.As stated, at least one characteristic of the present invention is the lattice direction of first silicon substrate 21 and second silicon substrate 22 and inconsistent.In detail, first lattice direction < 100>of first silicon substrate 21 does not have the 4th lattice direction < 100>of alignment second silicon substrate 22, but differs an angle, and this angle is preferably 45 degree.Likewise, second lattice direction < 110>of first silicon substrate 21 does not have the 3rd lattice direction < 110>of alignment second silicon substrate 22, but differs an angle, and this angle is preferably 45 degree.
The silicon wafer 2 of above-mentioned formation microelectromechanicdevices devices 1 must be by the reason that at least two silicon substrates of the different lattice direction of tool are formed: the size of torsional rigid of silicon substrate (torsional stiffness) and flexural rigidity (bending stiffness) receives the lattice direction influence; If desire to promote simultaneously the engineering properties of microelectromechanicdevices devices 1; For example increase torsional rigid and flexural rigidity, the lattice direction between above-mentioned silicon substrate must be looked the mechanical property of different microelectromechanicdevices devices and done suitable coupling.
With the present invention's first preferred embodiment, the Miller index on the surface of first silicon substrate 21 and second silicon substrate 22 is all<100>, and the lattice direction of this type of silicon substrate and rigidity concern sketch map (representing) as shown in Figure 5, C wherein with polar coordinate mode
12, C
22, C
33, C
44, C
66Deng being the tensor (tensor) in the rigid matrix (stiffness matrix), and tensor C
66Relevant with the torsional rigid of first silicon substrate 21 and second silicon substrate 22.Know tensor C by shown in Figure 5
66In lattice direction<100>Last convergence maximum is in lattice direction<110>On convergence minimum then.And because torsional rigid and flexural rigidity are inverse ratio, so flexural rigidity is in lattice direction < 110>maximum, in lattice direction < 100>minimum.
See also Fig. 6 A and Fig. 6 B, be respectively the direction sketch map that microelectromechanicdevices devices 1 is formed at first and second silicon structure layer 11,12 on first and second silicon substrate 21,22.
Shown in Fig. 6 A; In present embodiment; The first silicon structure layer 11 is to be produced by first silicon substrate 21, and first plane 114 of the first silicon structure layer 11 is a copline or parallel with the surface 21 of first silicon substrate 21, and therefore the Miller index on first plane 114 is all < 100>with surface 21.In addition; Therefore the lattice direction of the first silicon structure layer 11 is consistent with the lattice direction of first silicon substrate 21, and first silicon structure 11 has four Miller indexs parallel with first plane 114 as shown in the figure and is first lattice direction of < 100>and four Miller indexs second lattice direction for < 110 >.
First rotor shaft direction 1111 of first rod member 111 is parallel with first lattice direction < 100 >, and staggered with second lattice direction < 110 >; 1121 of second rotor shaft direction of second rod member 112 are parallel with another first lattice direction < 100 >, and staggered with another second lattice direction < 110 >.In the top is described; Staggered also can claim for non-parallel; It representes between first rotor shaft direction 1111 and second lattice direction < 110>angle is arranged; Between second rotor shaft direction 1121 and another second lattice direction < 110>angle is arranged, and angle can be realized through the lattice direction < 110>that changes first silicon substrate 21 and the angle of the lattice direction < 110>of second silicon substrate 22.
Cooperate Fig. 5 to know, as long as lattice direction non-< 110 >, torsional rigid all can promote, and first therefore parallel with first lattice direction < 100>rod member 111 and the torsional rigid of second rod member 112 all have the good twisting rigidity.See through the lifting of this torsional rigid, win rod member 111 and second rod member 112 can be born carry out high-frequency ground and back and forth reverse with specific torsion.What deserves to be mentioned is; First rotor shaft direction 1111 or second rotor shaft direction 1121 do not limit parallel first lattice direction < 100 >; Only need to interlock with second lattice direction < 110 >, the torsional rigid of first rod member 111 and second rod member 112 can obtain lifting to a certain degree.
Shown in Fig. 6 B; In present embodiment; The second silicon structure layer 12 is to be produced by second silicon substrate 22, and second plane 122 of the second silicon structure layer 12 is a copline or parallel with the surface 221 of second silicon substrate 22, and therefore the Miller index on second plane 122 is all < 100 >.In addition; Therefore the lattice direction of the second silicon structure layer 12 is consistent with the lattice direction of second silicon substrate 22, and the second silicon structure layer 12 has four Miller indexs parallel with second plane 122 as shown in the figure and is the 3rd lattice direction of < 110>and four Miller indexs the 4th lattice direction for < 100 >.
In the second silicon structure layer 12, first bearing of trend 1211 of strengthening structure 121 is parallel with the 3rd lattice direction < 110 >, and staggered with the 4th lattice direction < 100 >; 1212 of second bearing of trends are parallel with another the 3rd lattice direction < 110 >, and staggered with another the 4th lattice direction < 100 >.As above-mentioned; Staggered that is non-parallel; It representes between first bearing of trend 1211 and the 4th lattice direction < 100>angle is arranged; Between 1212 of second bearing of trends and another the 4th lattice direction < 100>angle is arranged, and angle can be realized through the lattice direction < 110>that changes first silicon substrate 21 and the angle of the lattice direction < 110>of second silicon substrate 22.
Cooperation is by the inverse relation of Fig. 5 and aforementioned torsional rigid and flexural rigidity; As long as lattice direction non-< 100 >; Flexural rigidity can improve, so bearing of trend 1211, the 1212 reinforcement structure 121 parallel with the 3rd lattice direction < 110>in the present embodiment, just has best flexural rigidity.In addition, first bearing of trend 1211 and second bearing of trend 1212 do not limit parallel the 3rd lattice direction < 110 >, only need to interlock with the 4th lattice direction < 100 >, strengthen the flexural rigidity that structure 121 can have certain intensity.
See also Fig. 7, it is the stereogram of second preferred embodiment of microelectromechanicdevices devices of the present invention.Microelectromechanicdevices devices 1 difference of the microelectromechanicdevices devices 3 of second preferred embodiment and first preferred embodiment is: 11 on the first silicon structure layer of microelectromechanicdevices devices 3 has coilable first rod member 111.In other words, microelectromechanicdevices devices 3 is the single shaft micro mirror device.
Please cooperate and consult Fig. 8 A and Fig. 8 B, it is respectively the direction sketch map that microelectromechanicdevices devices 3 is formed at first and second silicon structure layer 11,12 on first and second silicon substrate 21,22.
As aforementioned, the Miller index on the surface 211 of first silicon substrate 21 and the surface 221 of second silicon substrate 22 is all < 100 >.First silicon substrate 21 definition in addition has four Miller indexs of parallel surfaces 211, first lattice direction and four second lattice direction (figure only partly illustrates) that the Miller index is < 110>for < 100 >, and second silicon substrate 22 also has four the 3rd lattice direction < 110>and four the 4th lattice direction < 100>(figure only partly illustrates) of parallel surfaces 221.
Shown in Fig. 8 A, in present embodiment, first rotor shaft direction 1111 of first rod member 111 is parallel with first lattice direction < 100 >, and staggered with second lattice direction < 110 >, and therefore first rod member 111 has preferable torsional rigid.In addition, first rotor shaft direction 1111 does not limit parallel with first lattice direction < 100 >, only needs to interlock with second lattice direction < 110 >, and the torsional rigid of first rod member 111 can obtain lifting to a certain degree.
See also Fig. 9, it is that the Miller index on surface of silicon substrate concerns sketch map (representing with polar coordinate mode) for the lattice direction of < 110>and rigidity.Can know by figure, do with the Miller index on surface<100>Silicon substrate similarly, influence the tensor C of torsional rigid
66In lattice direction<100>Maximum is in lattice direction<110>Minimum; In other words, flexural rigidity is in lattice direction<100>Minimum is in lattice direction<110>Maximum.
Because the first silicon structure layer 11 of microelectromechanicdevices devices 3 also can use surperficial Miller index to make for first silicon substrate 21 ' of < 110>except using surperficial Miller index for first silicon substrate 21 of < 100>makes.At this moment, first plane 114 of the first silicon structure layer is < 110>with the Miller index on surface 211.On the other hand, the second silicon structure layer 12 still can adopt surperficial 221 Miller indexs to make for second silicon substrate 22 of < 100 >, below will describe to the enforcement aspect of this type.
See also shown in Figure 10 A and Figure 10 B, it is respectively the direction sketch map that microelectromechanicdevices devices 3 forms first and second silicon structure layer 11,12 on first and second silicon substrate 21 ', 22, and wherein the Miller index on the surface 211 of first silicon substrate 21 ' is < 110 >.
Because the first silicon structure layer 11 is to be processed by first silicon substrate 21 ', therefore the first silicon structure layer 11 has identical lattice direction with first silicon substrate 21 '.At this moment, the first silicon structure layer 11 has two first lattice direction < 100>and two second lattice direction < 110 >.First rotor shaft direction 1111 of first rod member 111 is parallel to first lattice direction < 100 >, and staggered with second lattice direction < 110 >, and this moment, first rod member 111 had preferable torsional rigid.In addition, even first rotor shaft direction 1111 is not parallel with first lattice direction < 100 >, as long as first rotor shaft direction 1111 and second lattice direction < 110>are staggered, the torsional rigid of first rod member 111 also can be improved.
Except each embodiment of top and to implement aspect said, the second silicon structure layer of microelectromechanicdevices devices of the present invention also can use surperficial Miller index to make for second silicon substrate of < 110>or < 111 >.At this moment, the Miller index on second plane of the second silicon structure layer will with become < 110>or < 111 >; Cooperate the aforesaid second silicon structure layer, the first silicon structure layer then can select to use surperficial Miller index to make for first silicon substrate of < 100>or < 110 >.
Cooperate the preamble of Fig. 9 to describe, when adopting surperficial Miller index to make the second silicon structure layer for second silicon substrate of < 110 >, first bearing of trend and the 4th lattice direction < 100>of strengthening structure are staggered, and the flexural rigidity of strengthening structure can be improved.
And be directed against the surperficial Miller index of use is the situation of second silicon substrate of < 111 >, then please consults Figure 11 earlier.This figure is that the Miller index on surface of silicon substrate concerns sketch map (representing with polar coordinate mode) for the lattice direction of < 111>and rigidity.Can know by figure, influence the tensor C of torsional rigid
66All identical in any lattice direction, change speech, flexural rigidity also all is the same in any lattice direction.Therefore when adopting surperficial Miller index to make the second silicon structure layer for second silicon substrate of < 111 >, no matter strengthen which kind of lattice direction of bearing of trend deflection of structure, the flexural rigidity of strengthening structure all is consistent; Change speech, strengthen structure and will have an iso flexural rigidity.
Comprehensively above-mentioned, microelectromechanicdevices devices of the present invention has characteristics as follows at least:
1, when using surperficial Miller index to make the first silicon structure layer for first silicon substrate of < 100>or < 110 >; First rotor shaft direction and the lattice direction < 110>of rod member is staggered; Can before the geometry that does not change rod member, put, obviously improve its torsional rigid.
2, when using surperficial Miller index to make the second silicon structure layer for second silicon substrate of < 100>or < 110 >; The bearing of trend of strengthening structure and lattice direction < 100>is staggered; Can before not changing the geometry of strengthening structure, put, obviously improve its flexural rigidity.
3, when using surperficial Miller index to make the second silicon structure layer, strengthen structure and will have iso flexural rigidity for second silicon substrate of < 111 >.
The above embodiments enforcement aspect of the present invention that only is used for giving an example, and explain technical characterictic of the present invention, be not to be used for limiting protection category of the present invention.Any be familiar with this operator can unlabored change or the arrangement of the isotropism scope that all belongs to the present invention and advocated, rights protection scope of the present invention should be as the criterion with claim.
Claims (14)
1. microelectromechanicdevices devices comprises:
One first silicon structure layer; Comprise coilable one first rod member and one first plane; This first silicon structure layer has at least one first lattice direction and at least one second lattice direction, and the Miller index of this at least one first lattice direction is < 100 >, and the Miller index of this at least one second lattice direction is < 110 >; Wherein this first plane is parallel with this at least one first lattice direction and this at least one second lattice direction; This first rod member has one first rotor shaft direction, this first rotor shaft direction and this first plane parallel, and staggered with this at least one second lattice direction; And
One second silicon structure layer, this first silicon structure layer that is permanently connected, this second silicon structure layer comprise and this first parallel plane one second plane.
2. microelectromechanicdevices devices according to claim 1 is characterized in that, this first rotor shaft direction is parallel with this at least one first lattice direction.
3. microelectromechanicdevices devices according to claim 1 and 2 is characterized in that, the Miller index on this first plane is < 100 >.
4. microelectromechanicdevices devices according to claim 3; It is characterized in that; This first silicon structure layer also comprises coilable one second rod member, and this second rod member connects this first rod member, and this second rod member has one second rotor shaft direction; Parallel this first plane of this second rotor shaft direction, and perpendicular to this first rotor shaft direction.
5. microelectromechanicdevices devices according to claim 1 and 2 is characterized in that, the Miller index on this first plane is < 110 >.
6. microelectromechanicdevices devices according to claim 1 and 2; It is characterized in that this second silicon structure layer also comprises one and strengthens structure, and this second silicon structure layer has at least one the 3rd lattice direction and at least one the 4th lattice direction; The Miller index of this at least one the 3rd lattice direction is < 110 >; The Miller index of this at least one the 4th lattice direction is < 100 >, this at least one the 3rd lattice direction and parallel this second plane of this at least one the 4th lattice direction, and this reinforcement structure has a bearing of trend; This bearing of trend is parallel with this first rotor shaft direction, and staggered with this at least one the 4th lattice direction.
7. microelectromechanicdevices devices according to claim 6 is characterized in that, the Miller index on this second plane is < 100 >.
8. microelectromechanicdevices devices according to claim 6 is characterized in that, the Miller index on this second plane is < 110 >.
9. microelectromechanicdevices devices according to claim 6 is characterized in that, this bearing of trend is parallel with this at least one the 3rd lattice direction.
10. microelectromechanicdevices devices according to claim 1 and 2 is characterized in that, the Miller index on this second plane is < 111 >.
11. microelectromechanicdevices devices according to claim 1 and 2 is characterized in that, this first silicon structure layer also comprises a mirror surface structure, and this mirror surface structure directly connects this first rod member.
12. microelectromechanicdevices devices according to claim 4 is characterized in that, this first silicon structure layer also comprises a mirror surface structure, and this mirror surface structure directly connects this first rod member and connects this second rod member indirectly.
13. microelectromechanicdevices devices according to claim 4 is characterized in that, this second rotor shaft direction is parallel with this at least one first lattice direction.
14. a composite base material that is applied to a microelectromechanicdevices devices comprises:
One first silicon substrate; And
One second silicon substrate, a lattice direction of this first silicon substrate and a lattice direction of this second silicon substrate are different, with to a tensor that should microelectromechanicdevices devices.
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6771850B1 (en) * | 2000-11-18 | 2004-08-03 | Agere Systems Inc. | Article comprising a MEMS device and method therefor |
| US6949420B1 (en) * | 2004-03-12 | 2005-09-27 | Sony Corporation | Silicon-on-insulator (SOI) substrate having dual surface crystallographic orientations and method of forming same |
| CN1906120A (en) * | 2003-12-15 | 2007-01-31 | 模拟设备公司 | Semiconductor assembly with conductive rim and method of producing the same |
| CN101110428A (en) * | 2007-07-11 | 2008-01-23 | 中国科学院上海微系统与信息技术研究所 | Multi-layer insulator silicon material used for MEMS and method thereof |
| CN101258100A (en) * | 2005-05-31 | 2008-09-03 | 梅尔斯科技公司 | Microelectromechanical systems (MEMS) device including a superlattice and associated methods |
-
2010
- 2010-10-08 CN CN2010105095071A patent/CN102442631A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6771850B1 (en) * | 2000-11-18 | 2004-08-03 | Agere Systems Inc. | Article comprising a MEMS device and method therefor |
| CN1906120A (en) * | 2003-12-15 | 2007-01-31 | 模拟设备公司 | Semiconductor assembly with conductive rim and method of producing the same |
| US6949420B1 (en) * | 2004-03-12 | 2005-09-27 | Sony Corporation | Silicon-on-insulator (SOI) substrate having dual surface crystallographic orientations and method of forming same |
| CN101258100A (en) * | 2005-05-31 | 2008-09-03 | 梅尔斯科技公司 | Microelectromechanical systems (MEMS) device including a superlattice and associated methods |
| CN101110428A (en) * | 2007-07-11 | 2008-01-23 | 中国科学院上海微系统与信息技术研究所 | Multi-layer insulator silicon material used for MEMS and method thereof |
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Application publication date: 20120509 |