TWI302170B - Substrate electroless plating apparatus and method - Google Patents
Substrate electroless plating apparatus and method Download PDFInfo
- Publication number
- TWI302170B TWI302170B TW091132642A TW91132642A TWI302170B TW I302170 B TWI302170 B TW I302170B TW 091132642 A TW091132642 A TW 091132642A TW 91132642 A TW91132642 A TW 91132642A TW I302170 B TWI302170 B TW I302170B
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- plating
- semiconductor substrate
- rti
- substrates
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/01—Manufacture or treatment
- H10W20/031—Manufacture or treatment of conductive parts of the interconnections
- H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
- H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1619—Apparatus for electroless plating
- C23C18/1628—Specific elements or parts of the apparatus
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
- H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/01—Manufacture or treatment
- H10W20/031—Manufacture or treatment of conductive parts of the interconnections
- H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
- H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
- H10W20/037—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics the barrier, adhesion or liner layers being on top of a main fill metal
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/01—Manufacture or treatment
- H10W20/031—Manufacture or treatment of conductive parts of the interconnections
- H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
- H10W20/042—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers
- H10W20/044—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers for electroless plating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/01—Manufacture or treatment
- H10W20/031—Manufacture or treatment of conductive parts of the interconnections
- H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
- H10W20/052—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by treatments not introducing additional elements therein
- H10W20/0526—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by treatments not introducing additional elements therein by thermal treatment thereof
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemically Coating (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001341889A JP3960774B2 (ja) | 2001-11-07 | 2001-11-07 | 無電解めっき装置及び方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200300179A TW200300179A (en) | 2003-05-16 |
| TWI302170B true TWI302170B (en) | 2008-10-21 |
Family
ID=19155840
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW091132642A TWI302170B (en) | 2001-11-07 | 2002-11-06 | Substrate electroless plating apparatus and method |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US7141274B2 (https=) |
| JP (1) | JP3960774B2 (https=) |
| TW (1) | TWI302170B (https=) |
| WO (1) | WO2003040430A1 (https=) |
Families Citing this family (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050048768A1 (en) * | 2003-08-26 | 2005-03-03 | Hiroaki Inoue | Apparatus and method for forming interconnects |
| US7874260B2 (en) * | 2006-10-25 | 2011-01-25 | Lam Research Corporation | Apparatus and method for substrate electroless plating |
| US7829152B2 (en) * | 2006-10-05 | 2010-11-09 | Lam Research Corporation | Electroless plating method and apparatus |
| JP4519037B2 (ja) * | 2005-08-31 | 2010-08-04 | 東京エレクトロン株式会社 | 加熱装置及び塗布、現像装置 |
| KR101100288B1 (ko) * | 2005-12-02 | 2011-12-28 | 가부시키가이샤 알박 | Ｃｕ막의 형성방법 |
| US20070227901A1 (en) * | 2006-03-30 | 2007-10-04 | Applied Materials, Inc. | Temperature control for ECMP process |
| US8474468B2 (en) * | 2006-09-30 | 2013-07-02 | Tokyo Electron Limited | Apparatus and method for thermally processing a substrate with a heated liquid |
| US9383138B2 (en) * | 2007-03-30 | 2016-07-05 | Tokyo Electron Limited | Methods and heat treatment apparatus for uniformly heating a substrate during a bake process |
| US20080241400A1 (en) * | 2007-03-31 | 2008-10-02 | Tokyo Electron Limited | Vacuum assist method and system for reducing intermixing of lithography layers |
| US20090077825A1 (en) * | 2007-07-17 | 2009-03-26 | Semiconductor Analytical Services, Inc. (Sas Inc.) | Apparatus and method for cleaning and drying solid objects |
| US8596336B2 (en) * | 2008-06-03 | 2013-12-03 | Applied Materials, Inc. | Substrate support temperature control |
| KR101170765B1 (ko) * | 2009-02-11 | 2012-08-03 | 세메스 주식회사 | 기판 도금 장치 및 방법 |
| JP5339235B2 (ja) * | 2010-01-12 | 2013-11-13 | Ｃｋテクニック株式会社 | 小部品の無電解メッキ方法及び無電解メッキ装置 |
| CN101922002A (zh) * | 2010-04-12 | 2010-12-22 | 南京航空航天大学 | 化学复合镀槽 |
| AT510593B1 (de) * | 2010-12-15 | 2012-05-15 | Markus Dipl Ing Dr Hacksteiner | Vorrichtung zum metallisieren von wafern |
| US9257319B2 (en) | 2011-06-03 | 2016-02-09 | Tel Nexx, Inc. | Parallel single substrate processing system with alignment features on a process section frame |
| US8518748B1 (en) | 2011-06-29 | 2013-08-27 | Western Digital (Fremont), Llc | Method and system for providing a laser submount for an energy assisted magnetic recording head |
| US8288204B1 (en) * | 2011-08-30 | 2012-10-16 | Western Digital (Fremont), Llc | Methods for fabricating components with precise dimension control |
| TWI485286B (zh) * | 2011-11-16 | 2015-05-21 | 荏原製作所股份有限公司 | Electroless plating and electroless plating |
| US9909789B2 (en) * | 2012-01-10 | 2018-03-06 | Spring (U.S.A.) Corporation | Heating and cooling unit with canopy light |
| US8850829B2 (en) * | 2012-01-10 | 2014-10-07 | Spring (U.S.A.) Corporation | Heating and cooling unit with semiconductor device and heat pipe |
| US9153449B2 (en) * | 2012-03-19 | 2015-10-06 | Lam Research Corporation | Electroless gap fill |
| JP6507433B2 (ja) * | 2015-06-19 | 2019-05-08 | 株式会社ジェイ・イー・ティ | 基板処理装置 |
| USD811802S1 (en) | 2016-07-15 | 2018-03-06 | Spring (U.S.A.) Corporation | Food server |
| CN106958036B (zh) * | 2017-05-09 | 2018-12-04 | 李燕 | 一种电镀用电镀液加热装置 |
| US10772212B1 (en) * | 2019-12-13 | 2020-09-08 | U-Pro Machines Co., Ltd. | Electrochemical or chemical treatment device for high aspect ratio circuit board with through hole |
| JP7541457B2 (ja) | 2020-09-18 | 2024-08-28 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理装置および基板処理方法 |
| KR102435955B1 (ko) * | 2020-10-08 | 2022-08-24 | 한국생산기술연구원 | 인쇄회로기판의 무전해 도금방법 |
| CN112481674B (zh) * | 2020-11-12 | 2022-02-22 | 天长市京发铝业有限公司 | 一种铝板阳极氧化装置 |
| US20250038013A1 (en) * | 2023-07-27 | 2025-01-30 | Yield Engineering Systems, Inc. | Dual channel flow plate for wet processing |
| CN116924823B (zh) * | 2023-09-15 | 2023-12-12 | 江苏固家智能科技有限公司 | 陶瓷基板与铜箔无尘复合仓 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2902728B2 (ja) * | 1990-05-29 | 1999-06-07 | 新光電気工業株式会社 | 片面めっき方法 |
| US6042712A (en) * | 1995-05-26 | 2000-03-28 | Formfactor, Inc. | Apparatus for controlling plating over a face of a substrate |
| JP3490207B2 (ja) * | 1996-03-04 | 2004-01-26 | 松下電器産業株式会社 | カセットおよび半導体装置の製造装置 |
| JP3415005B2 (ja) * | 1997-09-08 | 2003-06-09 | 株式会社荏原製作所 | めっき装置 |
-
2001
- 2001-11-07 JP JP2001341889A patent/JP3960774B2/ja not_active Expired - Fee Related
-
2002
- 2002-11-06 US US10/482,117 patent/US7141274B2/en not_active Expired - Fee Related
- 2002-11-06 WO PCT/JP2002/011573 patent/WO2003040430A1/en not_active Ceased
- 2002-11-06 TW TW091132642A patent/TWI302170B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| US20040231997A1 (en) | 2004-11-25 |
| TW200300179A (en) | 2003-05-16 |
| US7141274B2 (en) | 2006-11-28 |
| JP3960774B2 (ja) | 2007-08-15 |
| JP2003147538A (ja) | 2003-05-21 |
| WO2003040430A1 (en) | 2003-05-15 |
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