TWI296554B - Laser processing method - Google Patents

Laser processing method Download PDF

Info

Publication number
TWI296554B
TWI296554B TW092105294A TW92105294A TWI296554B TW I296554 B TWI296554 B TW I296554B TW 092105294 A TW092105294 A TW 092105294A TW 92105294 A TW92105294 A TW 92105294A TW I296554 B TWI296554 B TW I296554B
Authority
TW
Taiwan
Prior art keywords
region
processed
modified region
laser
laser light
Prior art date
Application number
TW092105294A
Other languages
English (en)
Chinese (zh)
Other versions
TW200417438A (en
Inventor
Fukuyo Fumitsugu
Fukumitsu Kenshi
Uchiyama Naoki
Wakuda Toshimitsu
Atsumi Kazuhiro
Muramatsu Kenichi
Original Assignee
Hamamatsu Photonics Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hamamatsu Photonics Kk filed Critical Hamamatsu Photonics Kk
Publication of TW200417438A publication Critical patent/TW200417438A/zh
Application granted granted Critical
Publication of TWI296554B publication Critical patent/TWI296554B/zh

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B33/00Severing cooled glass
    • C03B33/09Severing cooled glass by thermal shock
    • C03B33/091Severing cooled glass by thermal shock using at least one focussed radiation beam, e.g. laser beam
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P40/00Technologies relating to the processing of minerals
    • Y02P40/50Glass production, e.g. reusing waste heat during processing or shaping
    • Y02P40/57Improving the yield, e-g- reduction of reject rates

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Toxicology (AREA)
  • Thermal Sciences (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Laser Beam Processing (AREA)
  • Dicing (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)
TW092105294A 2001-09-12 2003-03-12 Laser processing method TWI296554B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001277186A JP4659301B2 (ja) 2001-09-12 2001-09-12 レーザ加工方法

Publications (2)

Publication Number Publication Date
TW200417438A TW200417438A (en) 2004-09-16
TWI296554B true TWI296554B (en) 2008-05-11

Family

ID=19101756

Family Applications (1)

Application Number Title Priority Date Filing Date
TW092105294A TWI296554B (en) 2001-09-12 2003-03-12 Laser processing method

Country Status (2)

Country Link
JP (1) JP4659301B2 (ja)
TW (1) TWI296554B (ja)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102004012402B3 (de) * 2004-03-13 2005-08-25 Schott Ag Verfahren zum Freiformschneiden von gewölbten Substraten aus sprödbrüchigem Material
DE102004014277A1 (de) * 2004-03-22 2005-10-20 Fraunhofer Ges Forschung Verfahren zum laserthermischen Trennen von Flachgläsern
JP4631044B2 (ja) * 2004-05-26 2011-02-16 国立大学法人北海道大学 レーザ加工方法および装置
US7662668B2 (en) * 2005-11-16 2010-02-16 Denso Corporation Method for separating a semiconductor substrate into a plurality of chips along with a cutting line on the semiconductor substrate
EP2480507A1 (en) * 2009-08-28 2012-08-01 Corning Incorporated Methods for laser cutting articles from chemically strengthened glass substrates
JP5862088B2 (ja) * 2011-07-22 2016-02-16 アイシン精機株式会社 レーザによる割断方法、およびレーザ割断装置
US10357850B2 (en) * 2012-09-24 2019-07-23 Electro Scientific Industries, Inc. Method and apparatus for machining a workpiece
US9828278B2 (en) 2012-02-28 2017-11-28 Electro Scientific Industries, Inc. Method and apparatus for separation of strengthened glass and articles produced thereby
JP6090325B2 (ja) * 2012-08-21 2017-03-08 旭硝子株式会社 複合シートの切断方法、ガラスシートの切断方法、複合シートの切断片
JP6320261B2 (ja) * 2014-09-26 2018-05-09 株式会社ディスコ ウエーハの加工方法
JP2016129203A (ja) * 2015-01-09 2016-07-14 株式会社ディスコ ウエーハの加工方法
KR101812209B1 (ko) * 2016-02-16 2017-12-26 주식회사 이오테크닉스 레이저 마킹 장치 및 레이저 마킹 방법
JP7217585B2 (ja) * 2017-04-13 2023-02-03 株式会社ディスコ 分割方法
JP7210910B2 (ja) * 2017-08-22 2023-01-24 日本電気硝子株式会社 ガラス物品の製造方法及びガラス物品の製造装置
US10562130B1 (en) 2018-12-29 2020-02-18 Cree, Inc. Laser-assisted method for parting crystalline material
US10576585B1 (en) 2018-12-29 2020-03-03 Cree, Inc. Laser-assisted method for parting crystalline material
US11024501B2 (en) 2018-12-29 2021-06-01 Cree, Inc. Carrier-assisted method for parting crystalline material along laser damage region
US10611052B1 (en) 2019-05-17 2020-04-07 Cree, Inc. Silicon carbide wafers with relaxed positive bow and related methods
JP7370881B2 (ja) * 2020-01-24 2023-10-30 株式会社ディスコ ウエーハ加工方法、及びウエーハ加工装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2810151B2 (ja) * 1989-10-07 1998-10-15 ホーヤ株式会社 レーザマーキング方法
JPH04167985A (ja) * 1990-10-31 1992-06-16 Nagasaki Pref Gov ウェハの割断方法
JP3660741B2 (ja) * 1996-03-22 2005-06-15 株式会社日立製作所 電子回路装置の製造方法
JP3449201B2 (ja) * 1997-11-28 2003-09-22 日亜化学工業株式会社 窒化物半導体素子の製造方法

Also Published As

Publication number Publication date
JP4659301B2 (ja) 2011-03-30
TW200417438A (en) 2004-09-16
JP2003088976A (ja) 2003-03-25

Similar Documents

Publication Publication Date Title
TWI296554B (en) Laser processing method
TWI376284B (en) Laser beam manufacturing method
TWI270431B (en) Laser processing method
US8247734B2 (en) Laser beam machining method
TWI289890B (en) Semiconductor substrate, semiconductor chip and production method for a semiconductor device
TWI337560B (en) Laser processing method
US8685838B2 (en) Laser beam machining method
TW200819236A (en) Laser processing method
TW200824828A (en) Laser working method
JP2007245173A (ja) レーザ加工方法及びレーザ加工装置
JP4167094B2 (ja) レーザ加工方法
JP2003334675A (ja) 加工対象物切断方法
TWI296217B (en) Laser processing method
EP1609558B1 (en) Laser beam machining method
TW200932410A (en) Laser processing method
KR100766727B1 (ko) 레이저 가공 방법
JP2004268103A (ja) レーザ加工方法
KR100813351B1 (ko) 레이저 가공 방법

Legal Events

Date Code Title Description
MK4A Expiration of patent term of an invention patent