1289890 玖、發明說明 、 (發明說明應敘明：發明所屬之技術領域、先前[技術、內容、實施方式及圖式簡單說明） 【發明所屬之技術領域】 本發明係有關於一種適用於用以製造半導體裝置所採用 之半導體基板、半導體晶片、以及半導體裝置之製造方法。 【先前技術】 在半導體裝置之製造程序中，一般係將多數之功能元件 形成在矽晶圓等半導體基板上後，便藉由鑽石刀片而將半 導體基板於每個功能元件上進行切斷（切削加工）、進以獲 得半導體晶片。 此外’亦具有對於半導體基板而將具有吸收性之雷射光 照射至半導體基板，且藉由加熱熔融而切斷半導體基板（加 熱熔融加工）以取代藉由上述鑽石刀片之切斷。 【發明內容】 不過’上述之藉由切削加工或加熱熔融加工所達成之半 導體基板之切斷係在將功能元件形成在半導體基板上後才 進行，因此，例如在切斷時會有因產生之熱所造成之原因 而有使功能元件遭到破壞之虞。 在此’本發明係爲有鑒於此種事件所提出之物，其目的 在於提供一種半導體基板、半導體晶片、以及半導體裝置 之製造方法’係可防止在半導體裝置之製造程序中藉由切 斷而使功能元件受到破壞。 爲了達成上述之目的，有關本發明之半導體基板係爲， -6- 1289890 其特徵在於：藉由雷射光之照射而使得被形成在該雷射光 之聚光點位置之多光子吸收所造成之改質區域，而使切斷 起點區域形成在內部。 若藉由此種半導體基板時，藉由雷射光之照射而使得被 形成在該雷射光之聚光點位置之多光子吸收所造成之改質 區域，係被形成在半導體基板之內部。亦即，該改質區域 係爲，雷射光之聚光點爲被聚合於半導體基板之內部，藉 由在該聚光點位置產生所謂的多光子吸收之現象，而被形 成在半導體基板之內部。在發生該多光子吸收而獲得之雷 射光之照射中，因爲在半導體基板之表面上幾乎未吸收有 雷射光，故而半導體基板之表面係無法被熔融。從而，在 半導體裝置之製造程序中，係可將功能元件形成在如同習 知之半導體基板之表面上。再者，若藉由此種半導體基板 時，爲藉由改質區域而使切斷起點區域形成在半導體基板 之內部。當使改質區域形成在半導體基板之內部後，將改 質區域作爲起點、且以較小之力而使裂痕產生在半導體基 板上，因此，沿著切斷起點區域係可藉由較高精度來切割、 切斷半導體基板。從而，在半導體裝置之製造程序中，係 形成爲無須如習知之功能元件形成後之切削加工或加熱熔 融加工，而可防止因半導體基板之切斷所造成之功能元件 之破壞。 在此，所謂的聚光點係爲雷射光已聚光之處。此外，所 謂的功能元件係意味著光二極體等受光元件或雷射二極體 等發光元件、或是作爲電路所形成之電路元件等。再者， -7- 1289890 所謂的切斷起點區域係意味著在使半導體基板切斷時’形 成爲切斷之起點的區域。從而’切斷起點區域係爲’在半 導體基板中所預定切斷之切斷預定部。並且’切斷起點區 域係爲，具有使改質區域形成爲連續狀所形成之情況、亦 具有使改質區域形成爲斷續狀所形成之情況。 此外，有關本發明之半導體基板係爲，其特徵在於：以 在聚光點中之峰値功率密度爲lx l〇8(W/cm2)以上、且脈衝 幅度爲1 // s以下之條件下，藉由其雷射光照射而包含有被 形成在該雷射光聚光點位置之熔融處理區域的改質區域， 而使切斷起點區域形成在內部。 若藉由此種半導體基板時，以在聚光點中之峰値功率密 度爲lx 108(W/cm2)以上、且脈衝幅度爲1//S以下之條件 下，藉由其雷射光照射而包含有被形成在該雷射光聚光點 位置之熔融處理區域的改質區域，爲被形成在半導體基板 之內部。亦即，此種熔融處理區域係爲，雷射光之聚光點 爲被聚合於半導體基板之內部，藉由在該聚光點位置產生 所謂的多光子吸收之現象、且於局部受到加熱，而被形成 在半導體基板之內部。此種熔融處理區域係爲上述改質區 域之一例，因此，即使藉由此種半導體基板，亦可在半導 體裝置之製造程序中將功能元件形成在半導體基板之表面 上 '且可防止在功能元件形成後因半導體基板之切斷所造 成之功能元件之破壞。 此外’有關本發明之半導體基板係爲，其特徵在於：藉 ώ以雷射光之照射而被形成在該雷射光之聚光點位置之改 -8 - 1289890 質區域，而使切斷起點區域形成在內部。並且，此種改質 區域亦具有已熔融處理之區域的情況。 若藉由此種半導體基板時，藉由與上述有關本發明之半 導體基板相同的理由，在半導體裝置之製造程序中，係可 將功能元件形成在半導體基板之表面上，且可防止在功能 元件形成後中之半導體基板之切斷所造成之功能元件之破 壞。不過，改質區域之形成係具有起因於多光子之吸收的 情況、亦具有起因於其他原因之情況。 此外，有關本發明之半導體基板係爲，其特徵在於：具 有沿著外緣之外緣部，在外緣部之內側部分之內部係以改 質區域而形成有切斷起點區域。 若藉由此種半導體基板時，藉由與上述有關本發明之半 導體基板相同的理由，在半導體裝置之製造程序中，係可 將功能元件形成在半導體基板之表面上，且可防止在功能 元件形成後中之半導體基板之切斷所造成之功能元件之破 壞。此外，藉由將切斷起點區域形成在半導體基板中之外 緣部之內側部分的內部，而在半導體基板之搬送程序或用 以形成功能元件之加熱程序等之中，可防止半導體基板之 意外的切斷。 此時，切斷起點區域爲形成格子狀，在以切斷起點區域 所分隔之區隔部中，在位於外緣部側之區隔部之角部分上 係以交叉、形成切斷起點區域者爲佳。藉此，即使在位於 外緣部側之區隔部的角部分，亦可確實、且良好地進行與 區隔部之其他部分相同的切斷起點區域之形成，而可防止 -9- 1289890 在切斷半導體基板時產生在對應於該區隔部之半導體晶片 上有碎屑或裂化之產生。在此，所謂的格子狀係爲，不限 於延伸於正交兩方向之切斷起點區域爲進行交叉的情況， 亦意味著有延伸於相異之兩方向之切斷起點區域爲進行交 叉的情況。此外，所謂的交叉係爲，不限於直接交錯沿著 相異兩方向之切斷起點區域的情況，亦意味著有立體交錯 沿著相異兩方向之切斷起點區域的情況（亦即，爲具有扭轉 之關係的情況）。 此外，.在半導體基板之表面上，係以設有用以識別被形 成在半導體基板內部之切斷起點區域之位置的識別圖型爲 佳。切斷起點區域雖是被形成在半導體基板之內部，不過， 因爲用以識別切斷起點區域之位置的識別圖型爲被設在半 導體基板之表面，故而在半導體裝置之製造程序中，爲將 被形成在半導體基板之內部的切斷起點區域之位置依據辨 識圖型來掌握，而可進行功能元件之圖型製作（Patterning) 或半導體基板之切斷等。 爲了達成上述目的，有關本發明之半導體晶片係爲’將 聚光點聚合至半導體基板之內部、且藉由照射雷射光而在 半導體基板之內部以多光子之吸收而形成改質區域，將該 改質區域作爲切斷起點區域’而具有以進行半導體基板之 切斷所形成、且在藉由切斷而形成之切斷面上爲具有改質 區域。 若藉由此種半導體晶片時’因以改質區域而使切斷面受 到保護，故可防止在切斷面上之碎屑（chiPPing)或裂化之產 1289890 生。再者，半導體晶片之周緣部在藉由切斷面所包圍的情 況下’半導體晶片之周緣部形成爲藉由改質區域所包圍， 藉此’可使半導體晶片之抗折強度提昇。 此外’有關本發明之半導體晶片係爲，其特徵在於：將 聚光點聚合至半導體基板之內部，在聚光點中，在以峰値 功率密度爲lx 108(W/cm2)以上、且脈衝幅度爲l//s以下 之條件下照射雷射光，藉此而在半導體基板之內部形成包 含有熔融處理區域之改質區域，將包含有該熔融處理區域 之改質區域作爲切斷起點區域而藉由進行半導體基板之切 斷所形成，在以切斷所形成之切斷面上，爲具有包含熔融 處理區域之改質區域。 在此種半導體晶片中之熔融處理區域係爲上述改質區域 之一例，因此，即使藉由此種半導體晶片，除可防止在切 斷面上之碎屑或裂化之發生，同時在半導體晶片之周緣部 爲以切斷面所包圍的情況下，係可使半導體晶片之抗折強 度提昇。 此外，有關本發明之半導體晶片係爲，其特徵在於：將 聚光點聚合於半導體基板之內部，且藉由照射雷射光而將 改質區域形成在半導體基板之內部，將該改質區域作爲切 斷起點區域而以進行半導體基板之切斷所形成，在以切斷 所形成之切斷面上爲具有改質區域。而此種改質區域係亦 具有爲已經過熔融處理之區域的情況。 若藉由此種半導體晶片時，藉由與有關於上述本發明之 半導體晶片相同的理由，係可防止在切斷面上之碎屑或裂 -11- 1289890 化之發生，同時在半導體晶片之周緣部爲以切斷面所包圍 的情況下，係可使半導體晶片之抗折強度提昇。不過，改 質區域之形成係具有起因於多光子之吸收的情況、亦具有 起因於其他原因之情況。 此外，有關本發明之半導體晶片係爲，其特徵在於：包 含熔融處理區域之改質區域係被形成在端面。 右藉由此種半導體晶片時，係可防止以半導體基板之切 斷而造成在切斷面等端面上之碎屑或裂化之產生，同時， 若將半導體晶片之周緣部以改質區域包圍時，係可使半導 體晶片之抗折強度提昇。 藉由上述，有關本發明之半導體裝置之製造方法係可採 用具有下列程序之構造，即：將聚光點聚合於半導體基板 之內部且照射雷射光，在半導體基板之內部以多光子吸收 而形成改質區域，藉由此種改質區域，沿著半導體基板之 切斷預定線，由半導體基板之雷射光射入面而將切斷起點 區域形成在所定距離內側之程序；在形成切斷起點區域之 程序後，將功能元件形成在半導體基板之程序；在形成功 能元件之程序後，沿著切斷起點區域而切斷半導體基板之 程序。並且，此種改質區域亦具有已經過熔融處理之區域 的情況。 此外，有關本發明之半導體裝置之製造方法係可採用具 有下列程序之構造，即：將聚光點聚合於半導體基板之內 部且照射雷射光，將改質區域形成在半導體基板之內部， 藉由此種改質區域，沿著半導體基板之切斷預定線，由半 -12- 1289890 導體基板之雷射光射入面而將切斷起點區域形成在所定距 離內側之程序；在形成切斷起點區域之程序後，將功能元 件形成在半導體基板之程序；在形成功能元件之程序後， 沿著切斷起點區域而切斷半導體基板之程序。並且，此種 改質區域亦具有已經過熔融處理之區域的情況。 【實施方式】 以下，連同圖式而針對本發明之較佳實施例進行詳細說 明。在構成有關本實施例之半導體基板及半導體晶片時， 係使用如下所述之雷射工方法，係將聚光點聚合於半導體 基板之內部而照射雷射光，在半導體基板之內部藉由多光 子吸收而形成改質區域。在此，於最初針對此種雷射加工 方法、特別是針對多光子吸收來進行說明。 當光子的能量h 爲小於材料吸收之頻帶隙Ec時，便形 成爲光學性的透明狀。藉此，於材料之吸收所產生的條件 係爲h v > Ec。不過，即使爲呈光學性的透明狀，當雷射 光之強度爲相當大時，係以nh v > Ec之條件（n = 2、3、4···) 而於材料中產生吸收。且將此種現象稱爲多光子吸收。在 脈衝波的情況下’雷射光之強度爲以雷射光之聚光點的峰 値功率密度（W / c m2)所決定，例如，峰値功率密度爲以1 χ 1 0 8 (W / c m2)以上之條件下產生多光子吸收。峰値功率密度 係藉由（在聚光點中之每一雷射光之1脈衝的能量）+ (雷射 光之射束點斷面積X脈衝幅度）所求出。此外，在連續波的 情況下’雷射光之強度爲以雷射光之聚光點的電場強度 (W/cm2)來決定。 1289890 參照第1至6圖，針對有關利用此種多光子吸收之本實 施例的雷射加工原理來進行說明。第1圖係爲雷射加工中 之半導體基板、之平面圖，第2圖係沿著於第1圖所示之 半導體基板1之Π-ΙΙ線剖面之斷面圖，第3圖係爲雷射加 工後之半導體基板1之平面圖，第4圖係沿著於第3圖所 示之半導體基板1之IV-IV線剖面之斷面圖，第5圖係沿 著於第3圖所示之半導體基板之V-V線剖面之斷面圖，第 6圖係被切斷之半導體基板1之平面圖。 ^ 如第1圖及第2圖所示，在半導體基板1之表面3上爲 具有應切斷半導體基板1之所希望的切斷預定線5。切斷 預定線5係爲呈直線狀延伸之假想線（亦可將在半導體基板 1上實際將線延伸者作爲切斷預定線5)。有關本實施例之 雷射加工係爲，在以產生多光子吸收之條件下將聚光點P 聚合在半導體基板1之內部，且將雷射光L照射至半導體 基板1而形成改質區域7。此外，所謂的聚光點係爲雷射 光L已聚光之處。 . 鲁 藉由將雷射光L沿著切斷預定線5 (亦即爲沿著箭頭方向A) 而使其呈相對性地移動，而使聚光點P沿著切斷預定線5 移動。藉此，如第3圖至第5圖所示’改質區域7爲沿著 切斷預定線5之而僅被形成在半導體基板1之內部，在該 改質區域7形成所具有之切斷起點區域（切斷預疋部）9。有 關本實施例之雷射加工方法係爲，半導體基板1係不僅是 藉由吸收雷射光L而使半導體基板1發熱、形成改質區域 7。而是在半導體基板1上使雷射光L透過、在半導體基板 - 14 — 1289890 1之內部上使多光子吸收產生而形成改質區域7。藉此，因 在半導體基板1之表面3上幾乎未吸收有雷射光l，故而 在半導體基板1之表面3係不會產生熔融。 在半導體基板1之切斷中，若在切斷處上具有起點時半 導體基板1便由該起點開始分割，因此可如第6圖所示， 以較小之力來切斷半導體基板1。藉此，可在半導體基板1 之表面3上不會產生不必要的分割而可切斷半導體基板1。 此外，在將切斷起點區域作爲起點之半導體基板之切斷 方面，係考慮有以下兩點。第1，在切斷起點區域形成後， 藉由在半導體基板上施加有人爲力量而將切斷起點區域作 爲起點、分割半導體基板，進而具有使半導體基板切斷之 情況。此係例如爲半導體基板之厚度爲較大的情況下之切 斷。所謂的施加人爲力量係指，例如，沿著半導體基板之 切斷起點區域而在半導體基板上施加彎曲應力或剪應力， 藉由在半導體基板上付與溫度差而使之產生熱應力。第2, 藉由形成切斷起點區域，將切斷起點區域作爲起點而朝向 半導體基板之斷面方向（厚度方向）而成自然的分割，而具 有在結果上來看爲使半導體基板切斷之情況。此係爲，例 如在半導體基板之厚度較小的情況下，而可能藉由1列的 改質區域而使切斷起點區域形成，在半導體基板之厚度爲 較大的情況下，形成在厚度方向藉由以多數列所形成之改 質區域而形成切斷起點區域。此外，即使在此種自然分割 的情況下，於切斷處上，直到對應於未形成有切斷起點區 域之部位的部分表面上係不會產生搶先分割的情況，而可 - 15 - 1289890 僅割斷在對應於形成有切斷起點區域之部分，因此，係可 良好地控制割斷動作。近年來，因矽晶圓等半導體基板之 厚度係有薄化傾向，故而此種控制性爲佳之割斷方法係大 爲有效。 接著，在本實施例中，作爲以多光子吸收所形成之改質 區域，係具有如下說明之熔融處理區域。 將聚光點聚合至半導體基板之內部，於聚光點中之電場 強度爲以lx l〇8(W/cm2)以上、且脈衝幅度爲1//S以下之 條件下照射雷射光。藉此，半導體基板之內部係藉由多光 子吸收而使局部受到加熱。藉由此種加熱而使熔融處理區 域形成在半導體基板之內部。所謂的熔融處理區域係指一 旦熔融後而再度固化之區域、或是亦具有由熔融狀態之區 域或由熔融狀態而再固化之狀態的區域、且亦具有已經過 相變化之區域或已變化結晶構造之區域。此外，所謂的熔 融處理區域亦可爲在單結晶構造、非晶質構造、多結晶構 造中將某一構造變化成其他構造之區域。亦即，例如意味 著有由單結晶構造變化成非晶質構造之區域、由單結晶構 造變化成多結晶構造之區域、由單結晶構造變化成包含有 分晶質構造與多結晶構造之構造的區域。當半導體基板爲 矽單結晶構造之情況下，熔融處理區域係例如爲非晶質矽 構造。作爲電場強度之上限値，係例如爲lx l〇12(W/cm2)。 脈衝幅度係例如爲以1 n s〜2 0 0 n s爲佳。 本案發明者係爲，藉由實驗而確認在矽晶圓之內部爲形 成有熔融處理區域。實驗條件係如下述。 1289890 (A) 半導體基板：矽晶圓（厚度3 5 0 //m、外徑4英吋）。 (B) 雷射 光源：半導體雷射激勵Nd : YAG雷射 波長：1 0 6 4nm • 雷射光點斷面積：3.14x 10_8cm2 震盪形態：Q脈衝交換（switch-pulse) 重複頻率數：l〇〇kHz 脈衝幅度：3 0 n s 輸出：20 // J/脈衝 雷射光品質：ΤΕΜ。。 偏光特性：直線偏光 (C) 聚光用透鏡 倍率：5 0倍 Ν.Α. : 0.55 對於雷射光波長之透過率：60% (D) 載置有半導體基板之載置台的移動速度：100mm/秒 第7圖係表示藉由以上述條件之雷射加工所切斷之矽晶 圓之局部中之斷面照片的圖片。係使熔融處理區域1 3形成 在矽晶圓1 1之內部。此外，以上述條件所形成之熔融處理 區域13之厚度方向的大小係爲100/zm左右。 將熔融處理區域1 3爲藉由多光子吸收所形成之事進行 說明。第8圖係表示雷射光之波長與矽基板之內部透過率 之間的關係圖表。不過，係分別除去基板之表面側與裏面 側之反射成分，而表示出僅有內部之透過率。矽基板之各個 -17- 1289890 厚度 t 係分別針對於 5 0 // m、1 0 0 // ηι、2 0 0 // m、5 0 0 // m、1 0 0 0 // m而揭示上述關係。 例如，在Nd : YAG雷射之波長爲1 〇64nm之中，矽基板 之厚度係爲5 0 0 v m以下的情況下，可知在矽基板之內部之 雷射光爲透過8 0 %以上。於第7圖所示之矽晶圓1 1之厚 度係爲3 5 0从m，因此，藉由多光子吸收所達成之熔融處理 區域1 3係被形成在矽晶圓之中心附近、亦即爲被形成在由 表面至1 75 /z m之部分上。在此情況下之透過率係爲，在將 厚度200 //m之矽晶圓作爲參考後，因係爲90%以上，故 而雷射光係僅在矽晶圓 Π之內部被吸收、且近乎全數通 過。此係爲，在矽晶圓Π之內部係使雷射光被吸收，熔融 處理區域1 3並非被形成在矽晶圓1 1之內部（亦即，藉由雷 射光而以一般加熱而形成熔融處理區域），而意味著熔融處 理區域1 3係爲藉由多光子吸收所形成。藉由多光子吸收所 達成之熔融處理區域的形成係爲’例如係記載於日本熔接 學會全國大會演講槪要第66集（2 000年4月）之第72頁至 第7 3頁中之「藉由兆分之一秒脈衝雷射所達成之矽之加工 特性評估」。 此外，矽晶圓係爲’在熔融處理區域上具有所形成之切 斷起點區域作爲起點而朝向斷面方向 '產生分割’此種分 割係爲係藉由到達至矽晶圓之表面與裏面而在結果上來看 係被切斷。到達矽晶圓之表面與裏面之此種分割係亦具有 呈自然成長的情況，亦具有藉由將力施加於矽晶圓而成長 的情況。此外’在由切斷起點區j：或而使石夕晶圓之表面與裏 -18- 1289890 面受到的分割爲呈自然地成長的情況下，爲具有由熔融形 成切斷起點區域之熔融處理區域之狀態而成長分割的情 況、或是由形成切斷起點區域之熔融處理區域爲熔融之狀 態下進行再固化時而成長分割的情況下之任一方的情況。 不過，無論是在何種情況下，熔融處理區域係僅被形成在 石夕晶圓之內部，而在切斷後之切斷面上係如第7圖所示， 爲僅在內部形成有熔融處理區域。當在半導體基板之內部 形成在熔融處理區域中具有切斷起點區域後，於割斷時， 因難以產生由切斷起點區域線分離之不必要的分割故而容 易進行割斷控制。 以上，雖然以藉由多光子吸收所形成之改質區域來說明 熔融處理區域之情況，不過，考慮半導體基板之結晶構造 或其劈開性等，而將切斷起點區域形成如下所述時，將其 切斷起點區域作爲起點，便可以更加小之力、且精度爲佳 的切斷半導體基板。 亦即，在由矽等鑽石構造之單結晶半導體所形成之基板 的情況下，係以在沿著（111)面（第1劈開面）或（110)面（第2 劈開面）之方向上形成切斷起點區域者爲佳。此外，在由 GaAs等閃鋅礦（sphalerite)型構造之III-V族化合物半導體 所形成之基板的情況下，係以將切斷起點區域形成在沿著 (110)面之方向者爲佳。 此外，在沿著正交於應形成上述切斷起點區域之方向（例 如，沿著單結晶矽基板中之（111)面的方向）、或是在沿著正 交於應形成切斷起點區域之方向上，若將定向平面 - 1 9 一 1289890 (orientation flat)形成在半導體基板上時，藉由將該定向平 面作爲基準，便可將沿著應形成切斷起點區域之方向的切 斷起點區域而容易、且正確地形成在半導體基板上。 參照第9圖，針對被使用在上述雷射加工方法之雷射加 工裝置進行說明。第9圖係爲雷射加工裝置1 00之槪略構 成圖。 雷射加工裝置100係具備有：雷射光源101，爲產生雷 射光L ;雷射光源控制部1 02，係用以調節雷射光L之輸 g 出或脈衝幅度等而控制雷射光源 101 ;分色鏡（dichroic mirror) 1 03，爲具有雷射光L之反射機能，且配置呈足可 以90°改變雷射光L之光軸朝向；聚光用透鏡105，爲將 以分色鏡103所反射之雷射光L進行聚光；載置台107， 爲載置有已受到由聚光用透鏡1 05所聚光之雷射光L所照 射的半導體基板1 ; 0台座108，係用以使載置台107旋轉； X軸台座109，爲用以使載置台107朝X軸方向移動；Y 軸台座111，爲用以使載置台107朝與X軸方向正交之Υ φ 軸方向移動；Z軸台座1 1 3，爲用以使載置台1 07朝與X 軸方向與γ軸方向正交之Z軸方向移動；台座控制部1 1 5， 係爲控制該等4個台座108、109、111、113之移動。 載置台1 〇 7係具有：紅外透過照明1 1 6，係產生用以使 半導體基板1由紅外線所照明的紅外線；支撐部1 07a，係 將半導體基板1支撐在紅外透過照明1 1 6上，用以使半導 體基板1以紅外透過照明1 1 6而照射有紅外線。 此外，Z軸方向係形成爲與半導體基板1之表面3正交 -20- 1289890 之方向’因此’爲形成射入至半導體基板1之雷射光L之 焦點深度的方向。藉此，藉由使Z軸台座π 3於Z軸方向 移動，而可將雷射光L之聚光點P聚合至半導體基板1之 表面3或內部。此外，此種聚光點P之χ(Υ)軸方向之移動 係爲，使半導體基板1以（Χ)Υ軸台座109(111)而於Χ(Υ) 軸方向移動來進行。 雷射光源1 〇 1係爲產生脈衝雷射光之N d : Y A G雷射。 作爲可用於雷射光源101之雷射，其他係具有Nd: YV04 雷射、Nd: YLF雷射或鈦藍寶石雷射（titanium sapphire laser)。在形成熔融處理區域的情況下，係以使用Nd ·· YAG 雷射、Nd : YV04雷射、Nd : YLF雷射爲佳。在本實施例 中，雖在半導體基板1之加工中爲採用脈衝雷射光，不過， 若是可引起多光子吸收時，則亦可爲連續波雷射光。 雷射加工裝置1〇〇更具備有：觀察用光源117，係爲了 將被載置於載置台1 07之半導體基板1可藉由可視光線來 進行照明，而產生可視光線；以及可視光用之光束分離器 119，係與分色鏡1〇3及聚光用透鏡105配置在同樣的光軸 上。且使分色鏡配置在光束分離器119及聚光用透鏡 1 05之間。光束分離器1 1 9係被配置呈具有反射約一半之 可視光線、且透過殘餘一半之機能，並且將可視光線之光 軸朝向改變90° 。由觀察用光源117所產生之可視光線係 以光束分離器1 1 9而被反射約一半’此種已被反射之可視 光線係透過分色鏡1〇3及聚光用透鏡105 ’而照明包含半 導體基板1之切斷預定線5等之表面3 ° -21- 1289890 雷射加工裝置1 〇 〇更具備有被配置在與光束分丨 分色鏡1 03及聚光用透鏡1 05相同光軸之拍攝元 及成像透鏡1 2 3。作爲拍攝元件1 2 1，例如係具巧 相機。已照明包含切斷預定線5等之表面3的可 反射光係爲，透過聚光用透鏡105、分色鏡1〇3、 器1 1 9，以成像透鏡1 23所成像、且以拍攝元件 而形成拍攝資料。 此外，在將半導體基板1以紅外透過照明1 1 6 外線，同時若藉由後述之拍攝資料處理部1 2 5而 鏡1 2 3及拍攝元件1 2 1之觀察面相合於半導體基 部時，係拍攝半導體基板1之內部而可取得半導 之內部拍攝資料。 雷射加工裝置1 00更具備有：拍攝資料處理部 輸入有由拍攝元件121所輸出之拍攝資料；整 1 27，係控制雷射加工裝置1 〇〇之整體；以及監視 拍攝資料處理部1 2 5係爲，將拍攝資料作爲基準 以觀察用光源1 1 7產生之可視光之焦點相合於表] 演算焦點資料。依據此種焦點資料，台座控制部 動控制Z軸台座1 1 3，以將可視光之焦點相合於表 此，拍攝資料處理部1 2 5係作爲自動對焦單元之 外，拍攝資料處理部1 25係爲，將拍攝資料作爲 演算表面3之擴大影像等影像資料。此種影像資 至整體控制部1 27，而使整體控制部受到各種處 送至監視器129。藉此，而在監視器129顯示有擴 雛器1 1 9、 件121以 ! CCD 照 _視光線之 光束分離 1 2 1拍攝 而照明紅 將成像透 板1之內 體基板1 125，係 體控制部 器 129。 ，爲了將 面3上而 115爲移 :面3。藉 機能。此 基準，而 料係被送 理、被傳 大影像。 -22- 1289890 在整體控制部1 2 7方面，輸入來自台座控制部1 1 5之資 料' 來自拍攝資料處理部1 2 5之影像資料等，以基於該等 資料而控制光源控制部1 02、觀察用光源1 1 7以及台座控 制部1 1 5，藉此而整體控制雷射加工裝置1 〇 〇。藉此，整體 ί空制部1 27係作爲電腦單元之機能。 以下，藉由實施例來針對本發明進行更加具體的說明。 〔半導體基板之實施例1〕 參照第1 〇圖至第1 3圖，針對有關本發明之半導體基板 之實施例1進行說明。第1 0圖係有關實施例1之半導體基 板1的立體圖。第1 1圖係沿著於第1 0圖所示之半導體基 板之ΧΙ-ΧΙ線剖面之斷面圖，第12圖係沿著於第10圖所 示之半導體基板之ΧΙΙ-ΧΙΙ線剖面之斷面圖，第13圖係表 示於第10圖所示之被設在半導體基板表面之雷射圖型之相 片的圖片。 有關實施例1之半導體基板1係爲厚度3 5 0 # m、外徑4 英吋之圓板狀矽晶圓，如第1 〇圖所示，係被形成爲半導體 基板1之周緣部局部爲形成直線狀之被切割狀之定向平面 (以下稱之爲「OF」）15。 如第1 1圖所示，在半導體基板1之內部中，在沿著平 行於OF 1 5方向延伸之切斷起點區域9a係由半導體基板1 內部中之外徑中心（以下稱之爲「基準原點」）於每個所定 間隔呈多數狀形成。此外，在半導體基板1之內部中’在 沿著垂直於OF 1 5方向延伸之切斷起點區域9b係由基準原 點於每個所定間隔呈多數狀形成。切斷起點區域9a係如第 -23- 1289890 1 2圖所示爲僅形成在半導體基板1之內部，而並未到達至 半導體基板1之表面3與裏面1 7。此係亦與有關切斷起點 區域9b相同。切斷起點區域9a及切斷起點區域9b係分別 以在半導體基板1之內部形成爲1列狀而形成具有熔融處 理區域。 如第10圖所示，於半導體基板1之表面3中之基準原 點正上方之位置上係設有雷射圖型1 9。藉由此種雷射圖型 1 9與OF 1 5兩者，係可掌握被形成在半導體基板1之內部 之切斷起點區域9a及切斷起點區域9b的位置。亦即，雷 射圖型1 9與OF 1 5兩者係作爲用以識別形成在半導體基板 1內部之切斷起點區域9a及切斷起點區域9b之位置的識 別圖型之機能。此外，雷射圖型1 9之形成處係爲，除了設 在切斷起點區域上之外，亦可設在形成於半導體基板上之 電路等之功能部位以外之處、或是形成於無法作爲半導體 基板之周緣部之半導體裝置而利用之部位。並且，雷射圖 型1 9係以被稱之爲軟性標印之無引起灰塵或引起熱影響之 潔淨的雷射圖型方式，藉由溶解半導體基板1之表面3而 形成，如第1 3圖所示，雷射圖型1 9係爲直徑1 // m之凹狀 物。 其次，參照第9圖及第14圖，針對以上述雷射加工裝 置100所達成之半導體基板1之製造方法來進行說明。第 1 4圖係用以說明半導體基板1之製造方法的流程圖。 首先，藉由未圖示之半導體基板1之光吸收特性之分光 光度計來進行測定。依據此種測定結果，所分別選定之雷 - 24- 1289890 射光源1 0 1係爲，產生用以形成在半導體基板1之表面3 上之雷射圖型1 9的雷射光、以及對於半導體基板1爲透明 波長或吸收較少之波長之雷射光L( S 1 0 1 )。接著，測定半 導體基板1之厚度。依據厚度測定結果及半導體基板1之 折射率來決疋半導體基板1之Z軸方向之移動量（S103)。 此移動量係爲，用以使對於半導體基板1爲透明波長或吸 收較少之波長之雷射光L之聚光點P位於半導體基板1之 內部，而將位於半導體基板1之表面3之雷射光L的聚光 g 點P作爲基準之半導體基板1之Z軸方向之移動量。該移 動量係被輸入至整體控制部1 2 7。 將半導體基板1載置於雷射加工裝置1〇〇之載置台107 之支撐構件107a上。並且使可視光由觀察用光源1 17產生、 照明至半導體基板1(S105)。將已受到照明之半導體基板1 之表面3藉由拍攝元件1 2 1而進行拍攝。以拍攝元件1 2 1 所拍攝之拍攝資料係被傳送至拍攝資料處理部1 25。依據 此種拍攝資料，拍攝資料處理部1 2 5係以將觀察用光源1 1 7 φ 之可視光之焦點位於表面3狀地演算焦點資料（S 107)。 此種焦點資料係被傳送至台座控制部1 1 5。台座控制部 1 1 5係爲，基於該焦點資料而使Z軸台座1 1 3於Z軸方向 移動（S 10 9)。藉此而將觀察用光源117之可視光焦點配置 於半導體基板1之表面3。此外，拍攝資料處理部1 2 5係 爲，依據拍攝資料而演算半導體基板1之表面3之擴大影 像資料。此種擴大影像資料係經由整體控制部1 27而被傳 送至監視器129，藉此而在監視器129上顯示有半導體基 -25- 1289890 板1之表面3之擴大影像。 接著，爲使半導體基板1之OF 1 5之方向與Y台座1 1 1 之衝程方向一致，而藉由Θ台座1 08使半導體基板1旋轉 (S 1 1 1 )。再者，用以在半導體基板1之表面3形成雷射圖 型1 9之雷射光之聚光點係爲了形成在半導體基板1之表面 3之基準原點正上方位置，而藉由X軸台座109、Y軸台座 1 1 1以及Z軸台座1 13來使半導體基板1移動（S1 13)。在此 狀態下照射雷射光，將雷射圖型1 9形成在半導體基板1之 表面3上之基準原點正上方之位置（S115)。 之後，預先被輸入以步驟S103所決定之整體控制部127 之移動資料係被傳送至台座控制部1 1 5。台座控制部1 1 5 係根據該移動量資料，而在雷射光L之聚光點P形成爲半 導體基板1之內部的位置上，藉由Z軸台座113而使半導 體基板1朝Z軸方向移動（S117)。 接著，由雷射光源1 0 1產生雷射光L，將雷射光L照射 至半導體基板1上。雷射光L之聚光點P係位於半導體基 板1之內部，因此，熔融處理區域係僅形成在半導體基板 1之內部。並且，藉由X軸台座109或Y軸台座111而使 半導體基板1移動，在半導體基板1之內部中，分別將在 沿著平行於OF15方向延伸之切斷起點區域9a、以及沿著 垂直於0 F 1 5方向延伸之切斷起點區域9b由基準原點於每 個所定間隔呈多數狀形成（S 1 1 9)，製造出有關實施例1之 半導體基板1。 此外，在將半導體基板1藉由紅外透過照明1 1 6而以紅 -26- 1289890 外線進行照明的同時，若藉由影像資料處理部1 2 5而使成 像透鏡1 2 3與拍攝元件1 2 1之觀察面相合於半導體基板1 之內部時，拍攝形成在半導體基板1之內部的切斷起點區 域9a及切斷起點區域9b、取得拍攝資料，而可顯示在監 視器129上。 如上述之說明，有關實施例1之半導體基板1係爲，使 聚光點P相合於半導體基板1之內部，於聚光點P中之峰 値功率密度爲lx l〇8(W/cm2)以上、且脈衝幅度爲1//S以 下之條件下，藉由照射雷射光L而在半導體基板1之內部 藉由多光子吸收而形成有熔融處理區域。在此種產生多光 子吸收所獲得之雷射光L的照射中，在半導體基板1之表 面3係因幾乎未吸收有雷射光L故而半導體基板1之表面 3係無法被熔融。從而，在半導體裝置之製造程序中，係 可藉由如習知之程序而將功能元件形成在半導體基板1之 表面3上。此外，因半導體基板1之裏面1 7亦未被熔融， 故而當然可將半導體基板1之裏面17進行與半導體基板1 之表面3相同的處理。 此外，有關實施例1之半導體基板1係爲，使具有熔融 處理區域之切斷起點區域9a與切斷起點區域9b形成在半 導體基板1之內部。在使熔融處理區域形成在半導體基板 1之內部後，爲將熔融處理區域作爲起點而以較小之力在 半導體基板1上產生分割，因此，係可沿著切斷起點區域 9a及切斷起點區域9b而藉由較高精度來分割、切斷半導 體基板1。藉此，在半導體裝置之製造程序中，係無須如 -27 - 1289890 同習知之功能元件形成後之切削加工或加熱熔融加工，例 如，如同沿著切斷起點區域9 a及切斷起點區域9b而僅以 刀緣抵接至半導體基板1之裏面1 7便可切斷半導體基板 1。從而，藉由功能元件形成後之半導體基板1之切斷而可 防止功能元件之破壞。 再者，在有關實施例1之半導體基板1中，雷射圖型1 9 與OF15兩者係成爲形成在半導體基板1之內部的切斷起 點區域9a及切斷起點區域9b之位置的基準。從而，在半 導體裝置之製造程序中，依據雷射圖型19與OF15而掌握 形成在半導體基板1之內部的切斷起點區域9a及切斷起點 區域9b之位置，而可進行功能元件之圖型製作或半導體基 板1之切斷等。 此外，當使熔融處理區域形成在半導體基板1之內部後， 即使是並非有意地施加外力，將熔融處理區域作爲起點（亦 即，爲沿著切斷起點區域9a及切斷起點區域9b)、而具有 在半導體基板1之內部產生分割之情況。此種分割是否已 到達半導體基板1之表面3或裏面1 7係有關於在半導體基 板1之厚度方向上之熔融處理區域之位置、或是有關於在 對於半導體基板1之厚度的熔融處理區域之大小。從而， 藉由調節形成在半導體基板1內部之熔融處理區域之位置 或大小等，而可進行下列各種控制，即，在半導體裝置之 製造程序中，藉由使半導體基板1經過環狀傳遞或是加熱 循環而可使分割不致到達半導體基板1之表面3及裏面 1 7、或是在即將切斷前而將分割到達至半導體基板〗之表 -28- 1289890 面3及裏面1 7。 〔半導體基板之實施例2〕 穸照第1 5圖至第1 8圖’針對有關本發明之半導體基板 之實施例2進彳了說明。有關貫施例2之半導體基板1係爲 厚度3 5 0 //m、外徑4英吋之圓板狀GaAs晶圓，如第15圖 所示’係使半導體基板1之周緣部局部切割呈直線狀而形 成有OF15 。 此種半導體基板1係具有沿著外緣之外緣部3 i (第i 5圖 之2點鏈線之外側部分），在該外緣部3 1之內側部分3 2 (第 1 5圖之2點鏈線之內側部分）的內部係與有關實施例1之 半導體基板1相同的，爲形成有沿著平行於OF15方向延 伸之切斷起點區域9 a、以及沿著垂直於〇 F丨5方向延伸之 多個切斷起點區域9b。如此，在內側部分3 2之內部爲使 切斷起點區域9a、9b形成格子狀，而使內側部分32被區 隔呈多數矩形狀之區隔部3 3。 在半導體裝置之製造程序中’係使功能元件形成在各個 區隔部3 3中，之後，沿著切斷起點區域9a、9b而使半導 體基板1被切斷，各區隔部3 3爲形成對應於各個半導體晶 片。 而如第1 6圖所示，在多數區隔部3 3中，位於外緣部3 } 側之區隔部3 3之外緣部3 1側之角部分3 3 a中，係交叉切 斷起點區域9 a與切斷起點區域9b所形成。亦即，在角部 分3 3 a中，切斷起點區域9 a係超越切斷起點區域9 b而結 束、切斷起點區域9 b係超越切斷起點區域9 a而結束。此 -29- 1289890 外，所謂的「多數區隔部3 3中，位於外緣部3 1側之區隔 部3 3」，換言之，係可指稱爲「在多數之區隔部3 3之中， 爲鄰接至外緣部3 1所形成之區隔部3 3」。 其次，針對有關實施例2之半導體基板1之製造方法來 進行說明。如第1 7圖所示，爲準備有遮罩3 6，其係形成 有具有與半導體基板1之內側部分32相等之形狀的開口部 3 5。並且，將遮罩3 6重疊至半導體基板1、以將內側部分 3 2由開口部3 5露出。藉此，半導體基板1之外緣部3 1爲 g 形成以遮罩3 6所覆蓋。 在此狀態下，例如係採用上述之雷射加工裝置1 〇〇，而 將聚光點相合於_半導體基板1之內部、照射雷射光，在半 導體基板1之內部以多光子吸收而形成熔融處理區域，藉 此而將切斷起點區域9a、9b形成在由半導體基板1之雷射 光射入面（亦即，由遮罩3 6之開口部3 5露出之半導體基板 1之表面）至所定距離內側上。 此時，將形成雷射光之掃描線的切斷預定線5設定呈以 · OF 1 5爲基準之格子狀，不過，若使各切斷預定線5之起點 5 a與終點5b位於遮罩3 6上時，係造成對於半導體基板1 之內側部分3 2爲以確實、且同等的條件下照射雷射光。藉 此，即使被形成在內側部分3 2之內部上的熔融處理區域在 任何場所，均可呈略爲同等的形成狀態’且可形成精密的 切斷起點區域9a、9b。 此外，亦可不使用遮罩3 6，而使各切斷預定線5之起點 5 a與終點5b位於半導體基板1之內側部分3 2與外緣部3 1 - 30- 1289890 之間的邊界附近，藉由沿著各切斷預定線5而進行雷射光 之照射而可在內側部分3 2之內部形成切斷起點區域9 a、 9b ° 如上述之說明，若藉由有關實施例2之半導體基板1時， 藉由與關於實施例1之半導體基板1相同的理由，在半導 體裝置之製造程序中，係可將功能元件形成在半導體基板 1之表面，且在功能元件形成後係可藉由半導體基板1之 切斷而可防止功能元件之破壞。 此外，使切斷起點區域9a、9b形成在半導體基板1之 內側部分3 2之內部，由於在外緣部3 1係未形成切斷起點 區域9a、9b，因而提昇作爲半導體基板1整體之機械強度。 從而，在進行半導體基板1之搬送程序或用以形成功能元 件之加熱程序等之中，係可防止半導體基板1在意料之外 下被切斷之事件。 此外，在位於外緣部3 1側之區隔部33之角部分33a之 中，因交叉切斷起點區域9a、9b而形成，故而即使在角部 分3 3 a之中，亦可確實地形成與該區隔部3 3之其他部分相 同的切斷起點區域9a、9b、且爲形成良好狀之物。從而， 在切斷半導體基板1時，係可防止在對應於該區隔部3 3之 半導體晶圓上發生碎屑或裂化。 此外，如第1 8圖所示，切斷起點區域9a、9b係被收容 於半導體基板1之內部、且未露出於外部，因此，亦可防 止在形成構成切斷起點區域9a、9b之熔融處理區域時之氣 體的產生。 -31- 1289890 再者，藉由使構成切斷起點區域9a、9b之熔融處理區 域形成在半導體基板1之內部，而期待有捕獲不純物之吸 氣效果，而形成爲在半導體裝置之製造程序中，爲可將重 金屬等不純物自裝置活性區域去除。此係爲，在有關實施 例1之半導體基板1亦爲相同。 〔半導體晶片以及半導體裝置之製造方法的實施例〕 參照第1 9圖，針對有關本發明之半導體晶片以及半導 體裝置之製造方法的實施例進行說明。第1 9圖係有關實施 例之半導體晶片2 1之立體圖。 有關實施例1之半導體晶片2 1係爲一種形成有如下所 示之物。亦即，使用有關上述實施例1或實施例2之半導 體基板1，在半導體裝置之製造程序中，將基於雷射圖型19 與OF15而掌握被形成在半導體基板1之內部的切斷起點 區域9a與切斷起點區域9b之位置，藉由圖型製作而將多 數功能元件23形成在半導體基板1之表面3上。並且，在 經過探針測試等檢測程序後，依據雷射圖型1 9與OF 1 5， 以如同沿著切斷起點區域9a及切斷起點區域9b，而僅以 刀緣抵接至半導體基板1之裏面17便可切斷半導體基板 1、獲得半導體晶片2 1。 如此所形成之半導體晶片2 1係如第1 5圖所示，其周緣 部爲藉由切斷面25所包圍，在半導體晶片2 1之端面中的 切斷面25上爲具有切斷起點區域9a或切斷起點區域9b。 切斷起點區域9a或切斷起點區域9b係均形成具有熔融處 理區域，因此，半導體晶片21爲形成在切斷面25上具有 -32 - 1289890 熔融處理區域。 如以上之說明，若藉由有關實施例之半導體晶片2 1時， 因藉由熔融處理區域而使切斷面25受到保護，固可防止在 切斷面25中之碎屑或裂化之產生。此外，半導體晶片2 1 之周緣部爲以切斷面2 5所包圍，因而半導體晶片2 1之周 緣部形成爲藉由熔融處理區域所包圍，藉此，可使半導體 晶片2 1之抗折強度提昇。 以上，雖針對本發明之實施例進行詳細的說明，不過， 當知道的是本發明並不被限定在上述實施例中。 在上述實施例中，作爲用以識別形成在半導體基板內部 之切斷起點區域之位置的識別圖型，係在半導體基板之表 面上設有雷射圖型及OF，不過，亦可例如設置多數的雷射 圖型、或是拉線等，藉由各種方法而在半導體基板之表面 上設置識別圖型。 此外，上述實施例雖係爲使切斷起點區域呈格子狀地形 成在半導體基板之內側的情況，不過，切斷起點區域係因 藉由雷射加工所形成，故而可沿著任意形狀之線來形成切 斷起點區域。 再者，上述實施例之半導體晶片雖係爲使周緣部以切斷 面所包圍之物，不過，即使僅將周緣部之局部作爲切斷面， 仍可藉由熔融處理區域防止在切斷面上之碎屑或裂化之產 生，可使半導體晶片之抗折強度提昇。 〔產業上利用之能性〕 如上述說明，若藉由本發明時，藉由雷射光之照射而使 -33 - 1289890 得被形成在該雷射光之聚光點位置之多光子吸收所造成之 改負區域形成在半導體基板z內部。亦即，此種改質區域 係爲，使雷射光之聚光點聚合於半導體基板之內部，藉由 在該聚光點之位置上產生有所謂多光子吸收之現象而被形 成在半導體基板之內部。在產生此種多光子吸收所獲得之 雷射光之照射中，在半導體基板之表面上幾乎未有雷射光 之吸收，因此不致熔融半導體基板之表面。從而，在半導 體裝置之製造程序中，係可將功能元件形成在如同習知之 半導體基板之表面上。 再者，若藉由本發明時，爲藉由改質區域而使切斷起點 區域形成在半導體基板之內部。當使改質區域形成在半導 體基板之內部後，將改質區域作爲起點、且以較小之力而 使裂痕產生在半導體基板上，因此，沿著切斷起點區域係 可藉由較高精度來切割、切斷半導體基板。從而，在半導 體裝置之製造程序中，係形成爲無須如習知之功能元件形 成後之切削加工或加熱熔融加工，而可防止因半導體基板 之切斷所造成之功能元件之破壞。 【圖式簡單說明】 第1圖係藉由有關本實施例之雷射加工方法所進行之雷 射加工中之半導體基板之平面圖。 第2圖係沿著於第1圖所示之半導體基板之II-II線剖 面之斷面圖。 第3圖係藉由有關本實施例之雷射加工方法而在雷射加 工後之半導體基板之平面圖。 ~34~ 1289890 第4圖係沿著於第3圖所示之半導體基板之1 V -1V線剖 面之斷面圖。 第5圖係沿著於第3圖所示之半導體基板之V-V線剖面 之斷面圖。 第6圖係藉由有關本實施例之雷射加工方法所切斷之半 導體基板之平面圖° 第7圖係表示藉由有關本實施例之雷射加工方法所切斷 之矽晶圓之局部中之斷面照片的圖片。 第8圖係表示在有關本實施例之雷射加工方法中之雷射 光之波長與矽基板之內部透過率之間的關係圖表。 第9圖係有關本實施例之雷射加工裝置之槪略構成圖。 第1 0圖係有關實施例1之半導體基板之立體圖。 第11圖係沿著於第圖所示之半導體基板之線 剖面之斷面圖。 第12圖係沿著於第1〇圖所示之半導體基板之ΧΙΙ-ΧΠ 線剖面之斷面圖。 第13圖係表示於第1〇圖所示之被設在半導體基板表面 之雷射圖型之相片的圖片。 第1 4圖係用以說明有關實施例1之半導體基板之製造 方法的流程圖。 第1 5圖係有關實施例2之半導體基板之平面圖。 第1 6圖係揭示於第1 5圖之半導體基板之局部放大圖。 第1 7圖係用以說明於第1 5圖所示之半導體基板之製造 方法之平面圖。 -35- 1289890 第18圖係沿著於第15圖所示之半導體基板之又¥111-X V 111線剖面之斷面圖。 第1 9圖係有關實施例之半導體晶片之立體圖。 【主要部分之代表符號說明】1289890 玖, description of the invention, (description of the invention should be clarified: the technical field to which the invention belongs, the previous [technical, content, implementation, and schematic description) [Technical Field of the Invention] The present invention relates to a method for A semiconductor substrate, a semiconductor wafer, and a method of manufacturing a semiconductor device used in manufacturing a semiconductor device. [Prior Art] In the manufacturing process of a semiconductor device, generally, a plurality of functional elements are formed on a semiconductor substrate such as a germanium wafer, and then the semiconductor substrate is cut by each of the functional elements by a diamond blade (cutting Processing), to obtain semiconductor wafers. Further, the semiconductor substrate is irradiated with absorbing laser light to the semiconductor substrate, and the semiconductor substrate is cut by heating and melting (heat-melting processing) instead of cutting by the diamond blade. SUMMARY OF THE INVENTION However, the above-described cutting of the semiconductor substrate by the cutting process or the heat-melting process is performed after the functional element is formed on the semiconductor substrate, and therefore, for example, there is a possibility of being generated at the time of cutting. The cause of heat is that the functional components are destroyed. The present invention has been made in view of such an event, and an object thereof is to provide a semiconductor substrate, a semiconductor wafer, and a method of manufacturing a semiconductor device, which are capable of preventing cutting in a manufacturing process of a semiconductor device. The functional components are destroyed. In order to achieve the above object, the semiconductor substrate according to the present invention is characterized in that: -6-1289890 is characterized in that the photon absorption formed at the position of the focused spot of the laser light is caused by the irradiation of the laser light. The material region is formed such that the cutting start region is formed inside. In the case of such a semiconductor substrate, the modified region caused by the absorption of the photons formed at the position of the focused spot of the laser light by the irradiation of the laser light is formed inside the semiconductor substrate. That is, the modified region is such that the condensed light of the laser light is polymerized inside the semiconductor substrate, and is formed inside the semiconductor substrate by causing a phenomenon of so-called multiphoton absorption at the position of the condensed spot. . In the irradiation of the laser light obtained by the multiphoton absorption, since the laser light is hardly absorbed on the surface of the semiconductor substrate, the surface of the semiconductor substrate cannot be melted. Thus, in the manufacturing process of the semiconductor device, the functional element can be formed on the surface of a conventional semiconductor substrate. Further, in the case of such a semiconductor substrate, the cutting start region is formed inside the semiconductor substrate by the modified region. When the modified region is formed inside the semiconductor substrate, the modified region is used as a starting point, and the crack is generated on the semiconductor substrate with a small force, so that the cutting start region can be higher precision To cut and cut the semiconductor substrate. Therefore, in the manufacturing process of the semiconductor device, it is possible to prevent the destruction of the functional element due to the cutting of the semiconductor substrate without the need for the cutting or heating and melting processing after the formation of the conventional functional element. Here, the so-called concentrating point is where the laser light has condensed. Further, the functional element means a light-emitting element such as a light-receiving element or a light-emitting element such as a laser diode, or a circuit element formed as a circuit. Further, the term "cutting start point region" of -7 to 1289890 means a region where the shape is the starting point of the cutting when the semiconductor substrate is cut. Therefore, the cutting start region is a predetermined cutting portion that is cut in the semiconductor substrate. Further, the cutting start region is formed by forming the modified region into a continuous shape or by forming the modified region into a discontinuous shape. Further, the semiconductor substrate according to the present invention is characterized in that the peak density power density in the condensed spot is lx l 〇 8 (W/cm 2 ) or more, and the pulse width is 1 // s or less. The modified region of the molten processed region formed at the position of the spot of the laser light is included by the irradiation of the laser light, and the cutting start region is formed inside. When such a semiconductor substrate is used, the peak power density in the condensed spot is 1×108 (W/cm 2 ) or more, and the pulse width is 1//S or less, and the laser light is irradiated thereon. The modified region including the molten processed region formed at the position of the laser light collecting spot is formed inside the semiconductor substrate. That is, the molten processing region is such that the condensed light of the laser light is polymerized inside the semiconductor substrate, and a so-called multiphoton absorption phenomenon occurs at the position of the condensed spot, and is locally heated. It is formed inside the semiconductor substrate. Such a molten processed region is an example of the modified region. Therefore, even if such a semiconductor substrate is used, a functional element can be formed on the surface of the semiconductor substrate in the manufacturing process of the semiconductor device and the functional component can be prevented. Destruction of the functional components caused by the cutting of the semiconductor substrate after formation. Further, the semiconductor substrate according to the present invention is characterized in that it is formed by changing the position of the light-converging point of the laser light by the irradiation of the laser light to form a region of the cut-off starting point region. Internal. Moreover, such a modified region also has a molten processed region. When such a semiconductor substrate is used, the functional element can be formed on the surface of the semiconductor substrate in the manufacturing process of the semiconductor device for the same reason as the above-described semiconductor substrate according to the present invention, and the functional element can be prevented. Destruction of the functional elements caused by the cutting of the semiconductor substrate in the middle. However, the formation of the modified region has a situation due to absorption of multiphotons and also causes other causes. Further, the semiconductor substrate according to the present invention is characterized in that the cutting edge region is formed in the inner portion of the outer edge portion along the outer edge portion of the outer edge portion with the modified region. When such a semiconductor substrate is used, the functional element can be formed on the surface of the semiconductor substrate in the manufacturing process of the semiconductor device for the same reason as the above-described semiconductor substrate according to the present invention, and the functional element can be prevented. Destruction of the functional elements caused by the cutting of the semiconductor substrate in the middle. Further, by forming the cutting start region in the inner portion of the outer edge portion of the semiconductor substrate, the semiconductor substrate can be prevented from being accidentally transferred in the semiconductor substrate transfer program or the heating program for forming the functional device. Cut off. In this case, the cutting start point region is formed in a lattice shape, and in the partition portion partitioned by the cutting start point region, the corner portion of the partition portion located on the outer edge portion side is intersected to form a cutting start point region. It is better. Thereby, even in the corner portion of the partition portion located on the outer edge portion side, the formation of the same cutting start region as the other portions of the partition portion can be surely and satisfactorily performed, and the prevention of the 91-1289890 can be prevented. When the semiconductor substrate is cut, cracks or cracks are generated on the semiconductor wafer corresponding to the spacer. Here, the lattice shape is not limited to the case where the cutting start point regions extending in the two orthogonal directions are intersected, and it means that the cutting start regions extending in the opposite directions are intersected. . In addition, the so-called crossover is not limited to the case of directly staggering the cutting start region in the opposite directions, and also means that the three-dimensional interleaving is performed along the cutting start region in the opposite directions (that is, The situation with a twist relationship). In addition, On the surface of the semiconductor substrate, an identification pattern for identifying the position of the cutting start region formed inside the semiconductor substrate is preferably provided. The cutting start region is formed inside the semiconductor substrate. However, since the identification pattern for identifying the position of the cutting start region is provided on the surface of the semiconductor substrate, in the manufacturing process of the semiconductor device, The position of the cutting start region formed inside the semiconductor substrate is grasped according to the identification pattern, and patterning of the functional element or cutting of the semiconductor substrate can be performed. In order to achieve the above object, a semiconductor wafer according to the present invention is characterized in that a condensed spot is polymerized inside a semiconductor substrate, and a modified region is formed by absorbing a plurality of photons inside the semiconductor substrate by irradiating the laser light. The modified region has a modified region which is formed by cutting the semiconductor substrate and is formed on the cut surface formed by the cutting as the cutting start region. When such a semiconductor wafer is used, the cut surface is protected by the modified region, so that the chipping (chiPPing) or cracking on the cut surface can be prevented. Further, in the case where the peripheral portion of the semiconductor wafer is surrounded by the cut surface, the peripheral portion of the semiconductor wafer is formed to be surrounded by the modified region, whereby the bending strength of the semiconductor wafer can be improved. Further, the semiconductor wafer according to the present invention is characterized in that the condensed spot is polymerized inside the semiconductor substrate, and the peak density power density is lx 108 (W/cm 2 ) or more and is pulsed at the condensed spot. The laser beam is irradiated under the condition that the amplitude is l//s or less, whereby a modified region including the molten processed region is formed inside the semiconductor substrate, and the modified region including the molten processed region is used as the cutting start region. By cutting the semiconductor substrate, the cut surface formed by the cutting has a modified region including the molten processed region. The molten processed region in such a semiconductor wafer is an example of the above modified region, and therefore, even with such a semiconductor wafer, it is possible to prevent the occurrence of chipping or cracking on the cut surface, and at the same time in the semiconductor wafer. When the peripheral portion is surrounded by the cut surface, the bending strength of the semiconductor wafer can be improved. Further, the semiconductor wafer according to the present invention is characterized in that the condensed spot is polymerized inside the semiconductor substrate, and the modified region is formed inside the semiconductor substrate by irradiating the laser light, and the modified region is used as the modified region. The starting point region is cut to form a semiconductor substrate, and the cut surface formed by the cutting has a modified region. This modified zone also has a region that has been melt processed. When such a semiconductor wafer is used, it is possible to prevent the occurrence of chipping or cracking on the cut surface by the same reason as the semiconductor wafer of the present invention described above, while at the same time in the semiconductor wafer. When the peripheral portion is surrounded by the cut surface, the bending strength of the semiconductor wafer can be improved. However, the formation of the modified region is caused by the absorption of multiphotons and also for other reasons. Further, a semiconductor wafer according to the present invention is characterized in that a modified region containing a molten processed region is formed on an end surface. When such a semiconductor wafer is used right, it is possible to prevent the occurrence of chipping or cracking on the end surface such as the cut surface by the cutting of the semiconductor substrate, and at the same time, when the peripheral portion of the semiconductor wafer is surrounded by the modified region Is to increase the flexural strength of the semiconductor wafer. According to the above, the manufacturing method of the semiconductor device of the present invention can adopt a configuration in which a condensed spot is polymerized inside the semiconductor substrate and irradiated with laser light, and is formed by multiphoton absorption inside the semiconductor substrate. In the modified region, the modified starting region is formed along the line to cut of the semiconductor substrate, and the laser light entering surface of the semiconductor substrate is used to form the cutting starting point region inside the predetermined distance; After the program of the area, the functional element is formed on the semiconductor substrate; after the program of the functional element is formed, the program of the semiconductor substrate is cut along the cutting start region. Moreover, such a modified region also has a region that has been subjected to melt processing. In addition, the manufacturing method of the semiconductor device of the present invention may adopt a configuration in which a condensed spot is polymerized inside the semiconductor substrate and irradiated with laser light, and the modified region is formed inside the semiconductor substrate by The modified region is formed along the line to be cut of the semiconductor substrate, and the laser light entering the surface of the semi-12-12889890 conductor substrate forms a cutting starting point region inside the predetermined distance; After the program, the functional element is formed on the semiconductor substrate; after the program of the functional element is formed, the program of the semiconductor substrate is cut along the cutting start region. Further, such a modified region also has a region which has been subjected to melt processing. [Embodiment] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings. In the semiconductor substrate and the semiconductor wafer according to the present embodiment, a laser beam method is used in which a condensed spot is polymerized inside a semiconductor substrate to irradiate laser light, and a multiphoton is used inside the semiconductor substrate. Absorbed to form a modified region. Here, the laser processing method, particularly for multiphoton absorption, will be described initially. When the energy h of the photon is smaller than the band gap Ec of the material absorption, it is optically transparent. Thereby, the condition resulting from the absorption of the material is h v > Ec. However, even in the case of optically transparent, when the intensity of the laser light is relatively large, absorption is caused in the material under the condition of nh v > Ec (n = 2, 3, 4...). This phenomenon is called multiphoton absorption. In the case of a pulse wave, the intensity of the laser light is determined by the peak power density (W / c m2) of the spotlight of the laser light. For example, the peak power density is 1 χ 1 0 8 (W / c M2) Multiphoton absorption occurs under the above conditions. The peak power density is obtained by (the energy of one pulse of each laser light in the condensed spot) + (the beam spot area of the laser beam X pulse amplitude). Further, in the case of a continuous wave, the intensity of the laser light is determined by the electric field intensity (W/cm2) of the focused spot of the laser light. 1289890 A description will be given of the laser processing principle of the present embodiment using such multiphoton absorption, with reference to Figs. 1 is a plan view of a semiconductor substrate in laser processing, and FIG. 2 is a cross-sectional view taken along the Π-ΙΙ line of the semiconductor substrate 1 shown in FIG. 1, and FIG. 3 is a laser. A plan view of the semiconductor substrate 1 after processing, FIG. 4 is a cross-sectional view taken along line IV-IV of the semiconductor substrate 1 shown in FIG. 3, and FIG. 5 is a semiconductor line shown in FIG. A cross-sectional view of a VV line of the substrate, and Fig. 6 is a plan view of the semiconductor substrate 1 to be cut. As shown in Figs. 1 and 2, on the surface 3 of the semiconductor substrate 1, a desired planned cutting line 5 for cutting the semiconductor substrate 1 is provided. The cutting planned line 5 is an imaginary line extending linearly (it is also possible to use the line extending person as the cutting planned line 5 on the semiconductor substrate 1). In the laser processing of the present embodiment, the light-converging point P is polymerized inside the semiconductor substrate 1 under the condition of generating multiphoton absorption, and the laser light L is irradiated onto the semiconductor substrate 1 to form the modified region 7. Further, the so-called condensed point is where the laser light L has been collected. . Lu moves the spot light P along the line to cut 5 by relatively moving the laser light L along the line to cut 5 (i.e., along the arrow direction A). Thereby, as shown in FIGS. 3 to 5, the modified region 7 is formed only inside the semiconductor substrate 1 along the line to cut 5, and the cut region is formed in the modified region 7. Starting point area (cutting the pre-turning part) 9. In the laser processing method of the present embodiment, the semiconductor substrate 1 heats the semiconductor substrate 1 not only by absorbing the laser light L but also forms the modified region 7. On the other hand, the laser light L is transmitted through the semiconductor substrate 1, and multiphoton is absorbed inside the semiconductor substrate 14-158901 to form a modified region 7. Thereby, since the laser light 1 is hardly absorbed on the surface 3 of the semiconductor substrate 1, the surface 3 of the semiconductor substrate 1 is not melted. In the cutting of the semiconductor substrate 1, when the semiconductor substrate 1 has a starting point at the cutting portion, the semiconductor substrate 1 is divided by the starting point. Therefore, as shown in Fig. 6, the semiconductor substrate 1 can be cut with a small force. Thereby, the semiconductor substrate 1 can be cut without causing unnecessary division on the surface 3 of the semiconductor substrate 1. Further, in terms of cutting the semiconductor substrate having the starting point region as the starting point, the following two points are considered. First, after the formation of the cutting start region, the cutting start region is used as a starting point and the semiconductor substrate is divided by applying a force on the semiconductor substrate, and the semiconductor substrate is cut. This is, for example, a cut in the case where the thickness of the semiconductor substrate is large. The application of the artificial force means, for example, that a bending stress or a shear stress is applied to the semiconductor substrate along the cutting start region of the semiconductor substrate, and thermal stress is generated by applying a temperature difference to the semiconductor substrate. Secondly, by forming the cutting starting point region, the cutting starting point region is taken as a starting point and is naturally divided toward the cross-sectional direction (thickness direction) of the semiconductor substrate, and the semiconductor substrate is cut as a result. . In this case, for example, when the thickness of the semiconductor substrate is small, the cutting start region may be formed by one modified region of the row, and in the thickness direction when the thickness of the semiconductor substrate is large. The cutting start region is formed by the modified region formed by the plurality of columns. Further, even in the case of such natural division, on the cut portion, a portion of the surface corresponding to the portion where the cut start region is not formed does not cause preemptive division, and can be - 15 - 1289890 only The cut is in a portion corresponding to the region where the cutting start point is formed, and therefore, the cutting operation can be favorably controlled. In recent years, since the thickness of a semiconductor substrate such as a wafer is tending to be thin, such a control method is particularly effective. Next, in the present embodiment, the modified region formed by multiphoton absorption has a molten processed region as described below. The condensed spot is polymerized into the inside of the semiconductor substrate, and the intensity of the electric field in the condensed spot is irradiated with laser light under conditions of lx l 〇 8 (W/cm 2 ) or more and a pulse width of 1//S or less. Thereby, the inside of the semiconductor substrate is locally heated by multiphoton absorption. The molten processed region is formed inside the semiconductor substrate by such heating. The term "melt-treated region" refers to a region that is once again solidified after melting, or a region that is also re-solidified by a region of a molten state or a molten state, and also has a region that has undergone phase change or has changed crystals. The area of construction. Further, the so-called melt-treated region may be a region in which a certain structure is changed to another structure in a single crystal structure, an amorphous structure, or a polycrystalline structure. In other words, for example, it means a region which changes from a single crystal structure to an amorphous structure, a region which changes from a single crystal structure to a polycrystalline structure, and a structure which changes from a single crystal structure to a structure including a crystal structure and a polycrystal structure. Area. In the case where the semiconductor substrate is a single crystal structure, the molten processed region is, for example, an amorphous germanium structure. The upper limit 电场 of the electric field strength is, for example, lx l〇12 (W/cm 2 ). The pulse amplitude is preferably, for example, 1 n s to 2 0 0 n s. The inventors of the present invention confirmed by experiment that a molten processed region was formed inside the germanium wafer. The experimental conditions are as follows. 1289890 (A) Semiconductor substrate: germanium wafer (thickness 305 // m, outer diameter 4 inches). (B) Laser Source: Semiconductor laser excitation Nd : YAG laser Wavelength: 1 0 6 4nm • Laser spot area: 3. 14x 10_8cm2 Oscillation form: Q-pulse switching frequency: l〇〇kHz Pulse amplitude: 3 0 n s Output: 20 // J/pulse Laser light quality: ΤΕΜ. . Polarization characteristics: linear polarized light (C) Concentrating lens magnification: 50 times Ν. Hey. : 0. 55 Transmittance for laser light wavelength: 60% (D) Movement speed of the stage on which the semiconductor substrate is placed: 100 mm/sec. Fig. 7 shows the wafer cut by laser processing under the above conditions. A picture of a section photo of the part. The molten processed region 13 is formed inside the germanium wafer 11. Further, the size of the molten processed region 13 formed under the above conditions in the thickness direction is about 100/zm. The molten processed region 13 is formed by multiphoton absorption. Fig. 8 is a graph showing the relationship between the wavelength of the laser light and the internal transmittance of the germanium substrate. However, the reflection components on the front side and the back side of the substrate were removed, respectively, and the internal transmittance was shown. The thickness of each -17- 1289890 of the 矽 substrate is revealed for 5 0 // m, 1 0 0 // ηι, 2 0 0 // m, 5 0 0 // m, 1 0 0 0 // m, respectively The above relationship. For example, when the thickness of the Nd:YAG laser is 1 〇64 nm and the thickness of the ruthenium substrate is 500 volts or less, it is understood that the laser light inside the ruthenium substrate is 80% or more. The thickness of the germanium wafer 11 shown in FIG. 7 is 350 to m, so that the molten processed region 13 obtained by multiphoton absorption is formed near the center of the germanium wafer, that is, It is formed on the part from the surface to 1 75 /zm. In this case, the transmittance is such that after the wafer having a thickness of 200 //m is used as a reference, since the system is 90% or more, the laser light is absorbed only inside the crucible wafer, and almost all by. In this case, the laser light is absorbed inside the crucible wafer, and the molten processed region 13 is not formed inside the crucible wafer 11 (that is, melted by general heating by laser light). The region) means that the molten processed region 13 is formed by multiphoton absorption. The formation of the molten processed region by multiphoton absorption is, for example, described in the 72nd to 7th pages of the 66th episode of the National Conference of the Japan Fusion Society (April 2000). Evaluation of the processing characteristics achieved by a one-quarter-second pulsed laser." In addition, the germanium wafer has a 'cutting start region formed on the molten processed region as a starting point and is divided toward the cross-sectional direction'. This segmentation is achieved by reaching the surface and the inside of the wafer. In the result, it is cut off. Such a division that reaches the surface of the wafer and the inside thereof also naturally grows, and also grows by applying a force to the wafer. In addition, in the case where the surface of the Shihwa wafer and the surface of the inner -18-1289890 are naturally grown by the cutting start point j: or the melting treatment is performed, the melting treatment is performed. In the case where the state of the region is grown and divided, or when the molten processed region in which the cutting starting region is formed is melted and resolidified, the film is grown and divided. However, in any case, the molten processed region is formed only inside the Shi Xi wafer, and the cut surface after cutting is as shown in Fig. 7, in which the melt processing is formed only inside. region. When the inside of the semiconductor substrate is formed in the molten processed region and has the cutting start region, the cutting control is facilitated at the time of cutting because it is difficult to cause unnecessary division by the cutting start region line. In the above, the molten processed region is described by the modified region formed by multiphoton absorption. However, when the cutting starting point region is formed as follows, considering the crystal structure of the semiconductor substrate or the cleavage property thereof. When the cutting start region is used as a starting point, the semiconductor substrate can be cut with less force and with better precision. That is, in the case of a substrate formed of a single crystal semiconductor constructed of a diamond such as 矽, in the direction along the (111) plane (the first cleave plane) or the (110) plane (the 2nd cleave plane) It is preferred to form a cutting start region. Further, in the case of a substrate formed of a III-V compound semiconductor having a sphalerite type such as GaAs, it is preferable to form the cutting start region in the direction along the (110) plane. Further, the direction is orthogonal to the direction in which the cutting starting point region should be formed (for example, the direction along the (111) plane in the single crystal germanium substrate), or the orthogonal starting point should be formed in the cutting starting region. In the direction of the orientation, if the orientation flat is formed on the semiconductor substrate, by using the orientation plane as a reference, the cutting starting point along the direction in which the cutting starting point region should be formed can be obtained. The region is easily and accurately formed on the semiconductor substrate. Referring to Fig. 9, a laser processing apparatus used in the above laser processing method will be described. Figure 9 is a schematic diagram of the laser processing apparatus 100. The laser processing apparatus 100 includes a laser light source 101 for generating laser light L, and a laser light source control unit 102 for controlling the laser light source 101 by adjusting the output or pulse amplitude of the laser light L; A dichroic mirror 103 is a reflecting function with laser light L, and is configured to change the optical axis direction of the laser light L by 90°; the collecting lens 105 is to be reflected by the dichroic mirror 103 The laser light L is condensed, and the mounting table 107 is mounted on the semiconductor substrate 1 that has been irradiated with the laser light L collected by the condensing lens 105. The pedestal 108 is used to mount the stage 107. Rotation; X-axis pedestal 109 for moving the mounting table 107 in the X-axis direction; Y-axis pedestal 111 for moving the mounting table 107 in the φ-axis direction orthogonal to the X-axis direction; Z-axis pedestal 1 1 3 is for moving the mounting table 107 in the Z-axis direction orthogonal to the X-axis direction and the γ-axis direction; the pedestal control unit 1 15 is for controlling the four pedestals 108, 109, 111, 113 Move. The mounting table 1 〇 7 includes infrared ray illumination 126, which generates infrared rays for illuminating the semiconductor substrate 1 by infrared rays, and a support portion 107a for supporting the semiconductor substrate 1 on the infrared illuminating illumination 1 16 . The semiconductor substrate 1 is irradiated with infrared rays by infrared ray illumination 1 16 . Further, the Z-axis direction is formed in a direction -20 - 1289890 orthogonal to the surface 3 of the semiconductor substrate 1 so that 'the direction of forming the depth of focus of the laser light L incident on the semiconductor substrate 1. Thereby, the Z-axis pedestal π 3 is moved in the Z-axis direction, whereby the condensed spot P of the laser light L can be polymerized onto the surface 3 or inside of the semiconductor substrate 1. Further, the movement of the condensed point P in the 轴 (axis) direction is performed by moving the semiconductor substrate 1 in the Χ (Υ) axis direction by the (Χ) Υ pedestal 109 (111). The laser source 1 〇 1 is a N d :Y A G laser that produces pulsed laser light. As a laser that can be used for the laser source 101, the other system has a Nd: YV04 laser, a Nd: YLF laser or a titanium sapphire laser. In the case of forming a molten processed region, it is preferable to use Nd··YAG laser, Nd:YV04 laser, or Nd:YLF laser. In the present embodiment, pulsed laser light is used in the processing of the semiconductor substrate 1. However, if multiphoton absorption is caused, continuous wave laser light may be used. The laser processing apparatus 1 further includes an observation light source 117 for generating visible light by illuminating the semiconductor substrate 1 placed on the mounting table 107 by visible light; and visible light The beam splitter 119 is disposed on the same optical axis as the dichroic mirror 1〇3 and the collecting lens 105. Further, the dichroic mirror is disposed between the beam splitter 119 and the collecting lens 105. The beam splitter 1 1 9 is configured to have a function of reflecting about half of the visible light and transmitting the remaining half, and changing the optical axis of the visible light by 90°. The visible light generated by the observation light source 117 is reflected by the beam splitter 119 by about half. 'The reflected visible light is transmitted through the dichroic mirror 1〇3 and the collecting lens 105'. The surface of the semiconductor substrate 1 on which the planned line 5 is cut, etc. 3 ° -21 - 1289890 The laser processing apparatus 1 is further provided with the same optical axis as the beam splitting dichroic mirror 103 and the collecting lens 156 The shooting element and the imaging lens 1 2 3 . As the imaging element 1 2 1, for example, it is a camera. The reflectable light that has been illuminated including the surface 3 of the cut line 5 or the like is transmitted through the condensing lens 105, the dichroic mirror 1 〇 3, the device 1 19, and the imaging lens 231, and the imaging element And the formation of shooting materials. Further, when the semiconductor substrate 1 is irradiated with the infrared rays through the infrared rays, and the observation surface of the mirror 1 2 3 and the imaging element 1 2 1 is combined with the semiconductor base by the imaging data processing unit 1 25 described later, The inside of the semiconductor substrate 1 is photographed to obtain semi-conductive internal photographing data. The laser processing apparatus 100 further includes: the photographic data processing unit inputs the photographic data output by the imaging device 121; the entire 127 controls the entire laser processing device 1; and the monitoring photographic data processing unit 1 2 The 5th system uses the photographing data as a reference to observe the focus of the visible light generated by the light source 1 1 7 in accordance with the table] calculation focus data. According to the focus data, the pedestal control unit controls the Z-axis pedestal 1 1 3 to match the focus of the visible light to the surface, and the photographic data processing unit 1 2 5 is used as the auto-focus unit, and the photographic data processing unit 125 The photographing data is used as image data such as an enlarged image of the calculation surface 3. Such image is supplied to the overall control unit 127, and the overall control unit is sent to the monitor 129 in various places. Thereby, on the monitor 129, the expander 1 1 9 and the member 121 are displayed by the CCD ray ray beam splitting 1 2 1 and the illuminating red will image the inner substrate 1 125 of the permeable plate 1 . Control unit 129. In order to move face 3 and 115 to move: face 3. Borrow function. This benchmark is sent and the image is transmitted. -22- 1289890 In the case of the overall control unit 1 2 7 , the data from the pedestal control unit 1 1 5 is input, and the image data from the photographic data processing unit 1 2 5 is controlled to control the light source control unit 102 based on the data. The observation light source 1 17 and the pedestal control unit 1 15 are used to thereby integrally control the laser processing apparatus 1 〇〇. In this way, the overall vacant department 1 27 functions as a computer unit. Hereinafter, the present invention will be more specifically described by way of examples. [Example 1 of semiconductor substrate] Referring to Figures 1 to 3, a first embodiment of a semiconductor substrate according to the present invention will be described. Fig. 10 is a perspective view showing the semiconductor substrate 1 of the first embodiment. Fig. 1 is a cross-sectional view taken along the ΧΙ-ΧΙ line of the semiconductor substrate shown in Fig. 10, and Fig. 12 is a ΧΙΙ-ΧΙΙ line cross section of the semiconductor substrate shown in Fig. 10. Fig. 13 is a view showing a photograph of a laser pattern of a laser pattern provided on the surface of a semiconductor substrate shown in Fig. 10. The semiconductor substrate 1 of the first embodiment is a disk-shaped germanium wafer having a thickness of 3 5 0 # m and an outer diameter of 4 inches. As shown in the first drawing, the peripheral portion of the semiconductor substrate 1 is partially formed. A linearly shaped oriented plane (hereinafter referred to as "OF") 15 is formed. As shown in FIG. 1, in the inside of the semiconductor substrate 1, the cutting start point region 9a extending in the direction parallel to the OF 1 5 is the center of the outer diameter in the inside of the semiconductor substrate 1 (hereinafter referred to as "reference" The origin ") is formed in a plurality of shapes at each predetermined interval. Further, in the inside of the semiconductor substrate 1, the cutting starting point region 9b extending in the direction perpendicular to the OF 15 direction is formed in a plurality of shapes from the reference origin at each predetermined interval. The cutting start region 9a is formed only inside the semiconductor substrate 1 as shown in Fig. -23-1289890, and does not reach the surface 3 and the inside of the semiconductor substrate 1. This system is also the same as the cutting start point area 9b. The cutting start region 9a and the cutting start region 9b are formed in a line shape inside the semiconductor substrate 1 to form a molten processing region. As shown in Fig. 10, a laser pattern type 19 is provided at a position directly above the reference origin in the surface 3 of the semiconductor substrate 1. With such a laser pattern type 19 and OF 1 5, the position of the cutting start point region 9a and the cutting start point region 9b formed inside the semiconductor substrate 1 can be grasped. That is, both the laser pattern type 19 and the OF 1 5 function as identification patterns for identifying the positions of the cutting start point region 9a and the cutting start point region 9b formed inside the semiconductor substrate 1. Further, the formation of the laser pattern type 19 is not limited to the function of the circuit or the like formed on the semiconductor substrate, but may be formed as A portion of the semiconductor device that is used in the peripheral portion of the semiconductor substrate. Further, the laser pattern type 19 is formed by dissolving the surface 3 of the semiconductor substrate 1 in a clean laser pattern called a soft mark without causing dust or causing heat, as in the first 3 As shown in the figure, the laser pattern type 19 is a concave body with a diameter of 1 // m. Next, a method of manufacturing the semiconductor substrate 1 achieved by the above-described laser processing apparatus 100 will be described with reference to Figs. 9 and 14. Fig. 14 is a flow chart for explaining a method of manufacturing the semiconductor substrate 1. First, the measurement is performed by a spectrophotometer of the light absorption characteristics of the semiconductor substrate 1 (not shown). According to the measurement result, the Ray-B 1289890 light source 110 selected separately is a laser light for forming a laser pattern 19 formed on the surface 3 of the semiconductor substrate 1, and for the semiconductor substrate. 1 is a laser beam L (S 1 0 1 ) of a transparent wavelength or a wavelength that absorbs less. Next, the thickness of the semiconductor substrate 1 was measured. The amount of movement of the semiconductor substrate 1 in the Z-axis direction is determined based on the thickness measurement result and the refractive index of the semiconductor substrate 1 (S103). The amount of movement is such that the condensed light P of the laser light L having a transparent wavelength or a low absorption wavelength for the semiconductor substrate 1 is located inside the semiconductor substrate 1, and the laser light is located on the surface 3 of the semiconductor substrate 1. The amount of movement of the semiconductor substrate 1 in the Z-axis direction of the reference G spot P of L is used. This amount of movement is input to the overall control unit 1 27 . The semiconductor substrate 1 is placed on the support member 107a of the mounting table 107 of the laser processing apparatus 1A. Further, the visible light is generated by the observation light source 17 and is illuminated to the semiconductor substrate 1 (S105). The surface 3 of the semiconductor substrate 1 that has been illuminated is imaged by the imaging element 1 21. The photographing data photographed by the photographing element 1 2 1 is transmitted to the photographing data processing unit 125. According to such photographing data, the photographing data processing unit 1 2 5 calculates the focus data by positioning the focus of the visible light of the observation light source 1 1 7 φ on the surface 3 (S107). This type of focus data is transmitted to the pedestal control unit 115. The pedestal control unit 1 1 5 is configured to move the Z-axis pedestal 1 1 3 in the Z-axis direction based on the focus data (S 10 9). Thereby, the visible light focus of the observation light source 117 is disposed on the surface 3 of the semiconductor substrate 1. Further, the photographic data processing unit 1 2 5 calculates the enlarged image data of the surface 3 of the semiconductor substrate 1 based on the photographic data. The enlarged image data is transmitted to the monitor 129 via the overall control unit 127, whereby an enlarged image of the surface 3 of the semiconductor substrate 25-129890 is displayed on the monitor 129. Next, in order to make the direction of the OF 15 of the semiconductor substrate 1 coincide with the stroke direction of the Y pedestal 1 1 1 , the semiconductor substrate 1 is rotated by the pedestal 108 (S 1 1 1 ). Further, the condensing point for forming the laser light of the laser pattern type 19 on the surface 3 of the semiconductor substrate 1 is formed at a position directly above the reference origin of the surface 3 of the semiconductor substrate 1 by the X-axis pedestal. 109. The Y-axis pedestal 1 1 1 and the Z-axis pedestal 1 13 move the semiconductor substrate 1 (S1 13). In this state, the laser beam is irradiated, and the laser pattern 19 is formed at a position directly above the reference origin on the surface 3 of the semiconductor substrate 1 (S115). Thereafter, the mobile data system that has been input in advance by the overall control unit 127 determined in step S103 is transmitted to the pedestal control unit 115. The pedestal control unit 1 1 5 moves the semiconductor substrate 1 in the Z-axis direction by the Z-axis pedestal 113 at a position where the condensing point P of the laser light L is formed inside the semiconductor substrate 1 based on the movement amount data. (S117). Next, laser light L is generated by the laser light source 110, and the laser light L is irradiated onto the semiconductor substrate 1. The light-converging point P of the laser light L is located inside the semiconductor substrate 1, and therefore, the molten processed region is formed only inside the semiconductor substrate 1. Further, the semiconductor substrate 1 is moved by the X-axis pedestal 109 or the Y-axis pedestal 111, and in the inside of the semiconductor substrate 1, the cutting start region 9a extending along the direction parallel to the OF15, and perpendicular to The cutting start region 9b extending in the direction of 0 F 1 5 is formed in a plurality of shapes at predetermined intervals from the reference origin (S 1 19), and the semiconductor substrate 1 according to the first embodiment is manufactured. Further, while the semiconductor substrate 1 is illuminated by the infrared ray illumination 1 1 6 and illuminated by the red -26 - 1289890 outer line, the imaging lens 1 2 3 and the imaging element 1 2 are made by the image data processing unit 1 2 5 When the observation surface of 1 is combined with the inside of the semiconductor substrate 1, the cutting start region 9a and the cutting start region 9b formed inside the semiconductor substrate 1 are imaged, and the image data is acquired, and can be displayed on the monitor 129. As described above, in the semiconductor substrate 1 of the first embodiment, the light-converging point P is made to be integrated in the inside of the semiconductor substrate 1, and the peak power density in the light-converging point P is lx l 〇 8 (W/cm 2 ). Above the above, and under the condition that the pulse width is 1//S or less, the molten processed light is formed by the multiphoton absorption inside the semiconductor substrate 1 by irradiating the laser light L. In the irradiation of the laser beam L obtained by the multiphoton absorption, the surface 3 of the semiconductor substrate 1 is hardly absorbed by the surface 3 of the semiconductor substrate 1 because the laser light L is hardly absorbed. Therefore, in the manufacturing process of the semiconductor device, the functional element can be formed on the surface 3 of the semiconductor substrate 1 by a conventional procedure. Further, since the inner surface 17 of the semiconductor substrate 1 is not melted, the inner surface 17 of the semiconductor substrate 1 can of course be treated in the same manner as the surface 3 of the semiconductor substrate 1. Further, in the semiconductor substrate 1 of the first embodiment, the cutting start region 9a and the cutting start region 9b having the molten processed region are formed inside the semiconductor substrate 1. After the molten processed region is formed inside the semiconductor substrate 1, the semiconductor substrate 1 is divided by a small force with the molten processed region as a starting point. Therefore, the cutting start region 9a and the cutting starting point can be formed. The region 9b is divided and cut by the semiconductor substrate 1 with high precision. Thereby, in the manufacturing process of the semiconductor device, it is not necessary to perform the cutting process or the heat-melting process after the formation of the conventional functional elements as in -27 to 1289890, for example, as in the cutting start region 9a and the cutting start region 9b. The semiconductor substrate 1 can be cut by abutting only the inner edge of the semiconductor substrate 1 with the edge of the blade. Therefore, the destruction of the functional element can be prevented by the cutting of the semiconductor substrate 1 after the formation of the functional element. Further, in the semiconductor substrate 1 of the first embodiment, both the laser pattern type 19 and the OF15 are used as the reference for forming the positions of the cutting start region 9a and the cutting start region 9b inside the semiconductor substrate 1. Therefore, in the manufacturing process of the semiconductor device, the positions of the cutting start region 9a and the cutting start region 9b formed inside the semiconductor substrate 1 are grasped in accordance with the laser pattern 19 and the OF15, and the pattern of the functional elements can be performed. The cutting or the like of the semiconductor substrate 1 is produced. Further, after the molten processed region is formed inside the semiconductor substrate 1, even if an external force is not intentionally applied, the molten processed region is used as a starting point (that is, along the cutting starting region 9a and the cutting starting region 9b), On the other hand, there is a case where division occurs inside the semiconductor substrate 1. Whether or not such division has reached the surface 3 or the inside of the semiconductor substrate 1 is related to the position of the molten processed region in the thickness direction of the semiconductor substrate 1, or to the molten processed region for the thickness of the semiconductor substrate 1. size. Therefore, by adjusting the position or size of the molten processed region formed inside the semiconductor substrate 1, etc., various controls can be performed by making the semiconductor substrate 1 pass through the ring or in the manufacturing process of the semiconductor device. The heating cycle prevents the division from reaching the surface 3 and the inside of the semiconductor substrate 1 or immediately before the cutting, and the division reaches the surface of the semiconductor substrate -28 - 1289890 3 and the inside 1 7 . [Embodiment 2 of Semiconductor Substrate] The second embodiment of the semiconductor substrate according to the present invention will be described with reference to Figs. 15 to 18. The semiconductor substrate 1 of the second embodiment is a disk-shaped GaAs wafer having a thickness of 305 //m and an outer diameter of 4 inches. As shown in Fig. 15, the peripheral portion of the semiconductor substrate 1 is partially cut. The OF15 is formed in a straight line. The semiconductor substrate 1 has an outer edge portion 3 i along the outer edge (the outer side portion of the two-point chain line in Fig. 5), and an inner portion 3 2 of the outer edge portion 31 (Fig. 5 The inner portion of the inner portion of the two-dot chain line is the same as that of the semiconductor substrate 1 of the first embodiment, and is formed with a cutting start region 9a extending in parallel with the OF15 direction, and along a line perpendicular to the 〇F丨5. A plurality of cutting start point regions 9b extending in the direction. In this manner, in the inner portion 32, the cutting start regions 9a and 9b are formed in a lattice shape, and the inner portion 32 is partitioned into a plurality of rectangular partition portions 33. In the manufacturing process of the semiconductor device, the functional elements are formed in the respective partitions 33, and then the semiconductor substrate 1 is cut along the cutting start regions 9a and 9b, and the respective partitions 3 are formed. Corresponding to each semiconductor wafer. Further, as shown in Fig. 16, in the plurality of partitions 3 3, the corner portions 3 3 a of the outer edge portion 3 1 side of the partition portion 3 3 on the outer edge portion 3 } side are intersected and cut. The starting point region 9a is formed with the cutting starting point region 9b. That is, in the corner portion 3 3 a, the cutting start point region 9 a passes beyond the cutting starting point region 9 b and ends, and the cutting starting point region 9 b ends beyond the cutting starting point region 9 a . In addition to the -29- 1289890, the "partition portion 3 3 on the outer edge portion 3 1 side of the plurality of partition portions 3 3", in other words, may be referred to as "in the majority of the partition portion 3 3 It is a partition 3 3 ′′ formed adjacent to the outer edge portion 31. Next, a description will be given of a method of manufacturing the semiconductor substrate 1 of the second embodiment. As shown in Fig. 17, in order to prepare the mask 3 6, an opening portion 35 having a shape equal to the inner portion 32 of the semiconductor substrate 1 is formed. Further, the mask 36 is superposed on the semiconductor substrate 1 to expose the inner portion 32 from the opening portion 35. Thereby, the outer edge portion 3 1 of the semiconductor substrate 1 is formed to be covered with the mask 36 as g. In this state, for example, the above-described laser processing apparatus 1 is used, and the light-converging point is integrated into the inside of the semiconductor substrate 1, and the laser light is irradiated, and the inside of the semiconductor substrate 1 is absorbed by multiphoton to form a melting treatment. In this manner, the cutting start point regions 9a and 9b are formed on the laser light incident surface of the semiconductor substrate 1 (that is, the surface of the semiconductor substrate 1 exposed by the opening portion 35 of the mask 36) to a predetermined distance. On the inside. At this time, the planned cutting line 5 for forming the scanning line of the laser light is set to have a lattice shape based on · OF 1 5 , but the starting point 5 a and the end point 5 b of each of the planned cutting lines 5 are placed in the mask 3 . In the case of 6 on, the laser light is irradiated to the inner portion 32 of the semiconductor substrate 1 under the conditions of accuracy and equality. Thereby, even if the molten processed region formed on the inside of the inner portion 3 2 is in any place, it can be in a slightly equivalent formation state' and precise cutting start regions 9a, 9b can be formed. Further, the starting point 5a and the end point 5b of each of the planned cutting lines 5 may be located near the boundary between the inner portion 3 2 of the semiconductor substrate 1 and the outer edge portion 3 1 - 30 - 1289890 without using the mask 36. The cutting start region 9a, 9b can be formed inside the inner portion 3 2 by irradiating the laser light along the respective cutting lines 5, as described above, by the semiconductor substrate according to the second embodiment. At the same time, for the same reason as the semiconductor substrate 1 of the first embodiment, in the manufacturing process of the semiconductor device, the functional element can be formed on the surface of the semiconductor substrate 1, and after the functional element is formed, the semiconductor can be used. The cutting of the substrate 1 prevents the destruction of the functional elements. Further, since the cutting start regions 9a and 9b are formed inside the inner portion 32 of the semiconductor substrate 1, since the cutting start regions 9a and 9b are not formed in the outer edge portion 31, the mechanical strength as the entire semiconductor substrate 1 is improved. . Therefore, it is possible to prevent the semiconductor substrate 1 from being cut off unexpectedly among the transfer process of the semiconductor substrate 1 or the heating process for forming the functional elements. Further, since the corner portion 33a of the partition portion 33 on the side of the outer edge portion 31 is formed by intersecting the cutting start regions 9a and 9b, even in the corner portion 3 3 a, it can be surely formed. The cutting starting point regions 9a and 9b which are the same as the other portions of the partition portion 3 3 are formed into a good shape. Therefore, when the semiconductor substrate 1 is cut, it is possible to prevent chipping or cracking from occurring on the semiconductor wafer corresponding to the partition portion 3 3 . Further, as shown in Fig. 18, the cutting start regions 9a and 9b are housed inside the semiconductor substrate 1 and are not exposed to the outside. Therefore, it is possible to prevent the melting of the cutting start regions 9a and 9b. The generation of gas when the area is treated. In addition, by forming the molten processed region constituting the cutting start regions 9a and 9b inside the semiconductor substrate 1, it is expected that the gettering effect of trapping impurities is formed in the manufacturing process of the semiconductor device. In order to remove impurities such as heavy metals from the active region of the device. This is also the same in the semiconductor substrate 1 of the first embodiment. [Embodiment of Semiconductor Wafer and Method of Manufacturing Semiconductor Device] An embodiment of a method for manufacturing a semiconductor wafer and a semiconductor device according to the present invention will be described with reference to Fig. 19. Fig. 19 is a perspective view showing a semiconductor wafer 21 of the embodiment. The semiconductor wafer 2 1 of the first embodiment is formed as follows. In other words, in the semiconductor substrate 1 of the above-described first embodiment or the second embodiment, in the manufacturing process of the semiconductor device, the cutting start region formed inside the semiconductor substrate 1 is grasped based on the laser pattern 19 and the OF15. A plurality of functional elements 23 are formed on the surface 3 of the semiconductor substrate 1 by patterning at the position of the cutting starting point region 9b and 9a. Further, after passing through the test procedure such as the probe test, the laser pattern type 19 and the OF 1 5 are used to abut the semiconductor substrate with only the edge of the blade as in the cutting start region 9a and the cutting start region 9b. The inside of 1 can cut the semiconductor substrate 1 and obtain the semiconductor wafer 21. As shown in FIG. 5, the semiconductor wafer 2 1 thus formed has a peripheral portion surrounded by the cut surface 25, and has a cutting start region on the cut surface 25 in the end surface of the semiconductor wafer 21 9a or cut off the starting point area 9b. The cutting starting point region 9a or the cutting starting point region 9b is formed to have a molten processing region. Therefore, the semiconductor wafer 21 has a molten processing region of -32 - 1289890 formed on the cut surface 25. As described above, when the semiconductor wafer 21 of the embodiment is used, the cut surface 25 is protected by the molten processing region, so that generation of chips or cracks in the cut surface 25 can be prevented. Further, since the peripheral portion of the semiconductor wafer 2 1 is surrounded by the cut surface 25, the peripheral portion of the semiconductor wafer 21 is formed to be surrounded by the molten processed region, whereby the bending strength of the semiconductor wafer 2 1 can be made. Upgrade. The embodiments of the present invention have been described in detail above, but it is to be understood that the present invention is not limited to the embodiments described above. In the above embodiment, as the identification pattern for identifying the position of the cutting start region formed inside the semiconductor substrate, the laser pattern and the OF are provided on the surface of the semiconductor substrate, but for example, a majority may be provided. The laser pattern, or the pull wire, etc., is provided with an identification pattern on the surface of the semiconductor substrate by various methods. Further, in the above-described embodiment, the cutting start region is formed in a lattice shape on the inner side of the semiconductor substrate. However, since the cutting start region is formed by laser processing, it is possible to follow a line of an arbitrary shape. To form a cut-off starting area. Further, the semiconductor wafer of the above-described embodiment is such that the peripheral portion is surrounded by the cut surface. However, even if only a part of the peripheral portion is used as the cut surface, the molten processed region can be prevented from being cut on the cut surface. The generation of debris or cracking can increase the flexural strength of the semiconductor wafer. [Industrial Applicability] As described above, according to the present invention, -33 - 1289890 is caused by the absorption of laser light to be formed by the multiphoton absorption at the position of the focused spot of the laser light. A negative region is formed inside the semiconductor substrate z. That is, the modified region is such that the condensed spot of the laser light is polymerized inside the semiconductor substrate, and is formed on the semiconductor substrate by a phenomenon of so-called multiphoton absorption at the position of the condensed spot. internal. In the irradiation of the laser light obtained by such multiphoton absorption, there is almost no absorption of the laser light on the surface of the semiconductor substrate, so that the surface of the semiconductor substrate is not melted. Thus, in the manufacturing process of the semiconductor device, functional elements can be formed on the surface of a conventional semiconductor substrate. Further, according to the present invention, the cutting start region is formed inside the semiconductor substrate by the modified region. When the modified region is formed inside the semiconductor substrate, the modified region is used as a starting point, and the crack is generated on the semiconductor substrate with a small force, so that the cutting start region can be higher precision To cut and cut the semiconductor substrate. Therefore, in the manufacturing process of the semiconductor device, it is possible to prevent the destruction of the functional element due to the cutting of the semiconductor substrate without the need for cutting or heat-melting after the formation of the conventional functional element. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a plan view of a semiconductor substrate in laser processing performed by the laser processing method of the present embodiment. Fig. 2 is a cross-sectional view taken along line II-II of the semiconductor substrate shown in Fig. 1. Fig. 3 is a plan view of a semiconductor substrate after laser processing by the laser processing method of the present embodiment. ~34~ 1289890 Fig. 4 is a cross-sectional view taken along the line 1 V - 1 V of the semiconductor substrate shown in Fig. 3. Fig. 5 is a cross-sectional view taken along the line V-V of the semiconductor substrate shown in Fig. 3. Figure 6 is a plan view of a semiconductor substrate cut by the laser processing method of the present embodiment. Fig. 7 is a view showing a portion of a germanium wafer cut by the laser processing method according to the present embodiment. A picture of a cross-section photo. Fig. 8 is a graph showing the relationship between the wavelength of the laser light and the internal transmittance of the ruthenium substrate in the laser processing method according to the present embodiment. Fig. 9 is a schematic structural view of the laser processing apparatus of the present embodiment. Fig. 10 is a perspective view showing a semiconductor substrate of the first embodiment. Figure 11 is a cross-sectional view taken along the line of the semiconductor substrate shown in the figure. Fig. 12 is a cross-sectional view showing a ΧΙΙ-ΧΠ line cross section of the semiconductor substrate shown in Fig. 1 . Fig. 13 is a view showing a photograph of a laser pattern of a laser pattern provided on the surface of a semiconductor substrate shown in Fig. 1. Fig. 14 is a flow chart for explaining a method of manufacturing the semiconductor substrate of the first embodiment. Fig. 15 is a plan view showing the semiconductor substrate of the second embodiment. Fig. 16 is a partially enlarged view showing the semiconductor substrate of Fig. 15. Fig. 17 is a plan view for explaining a method of manufacturing the semiconductor substrate shown in Fig. 15. -35- 1289890 Fig. 18 is a cross-sectional view taken along line 111-X V 111 of the semiconductor substrate shown in Fig. 15. Fig. 19 is a perspective view of a semiconductor wafer relating to the embodiment. [Description of representative symbols of the main part]
Ec :頻帶隙 L :雷射光 P ·_聚光點 1 :半導體基板 3 :表面 5 a :起點 5 b :終點 5 :切斷預定線 7 :改質區域 9a、9b :切斷起點區域 1 1 :砂晶圓 1 3 :熔融處理區域 1 5 :定向平面 17 :裏面 1 9 :雷射圖型 2 1 :半導體晶片 25 :切斷面 3 1 :外緣部 3 2 :內側部分 3 3 :區隔部 -36- 1289890 3 5 :開口部 3 6 :遮罩 1 〇 〇 :雷射加工裝置 1 〇 1 :雷射光源 1 〇 2 :光源控制部 1 〇 3 :分色鏡 1 〇 5 :聚光用透鏡 107 :載置台 | l〇7a :支撐部 1 08 : 0台座 1 0 9 : X軸台座 1 1 1 : Y軸台座 1 1 3 : Z軸台座 1 1 5 :台座控制部 1 1 6 :紅外透過照明 1 1 7 :觀察用光源 鲁 1 1 9 :光束分離器 1 2 1 :拍攝元件 1 2 3 :成像透鏡 1 2 5 :拍攝資料處理部 1 2 7 :整體控制部 1 2 9 :監視器 - 3 7 -Ec : band gap L : laser light P · _ spot 1 : semiconductor substrate 3 : surface 5 a : starting point 5 b : end point 5 : cutting planned line 7 : modified region 9a, 9b : cutting starting point region 1 1 : sand wafer 1 3 : molten processing region 15 : orientation plane 17 : inside 1 9 : laser pattern 2 1 : semiconductor wafer 25 : cut surface 3 1 : outer edge portion 3 2 : inner portion 3 3 : region Spacer -36- 1289890 3 5 : Opening 3 6 : Mask 1 〇〇: Laser processing device 1 〇1: Laser light source 1 〇 2 : Light source control unit 1 〇 3 : Dichroic mirror 1 〇 5 : Poly Optical lens 107: mounting table | l〇7a : support unit 1 08 : 0 pedestal 1 0 9 : X-axis pedestal 1 1 1 : Y-axis pedestal 1 1 3 : Z-axis pedestal 1 1 5 : pedestal control unit 1 1 6 : infrared transmission illumination 1 1 7 : observation light source Lu 1 1 9 : beam splitter 1 2 1 : imaging element 1 2 3 : imaging lens 1 2 5 : imaging data processing unit 1 2 7 : overall control unit 1 2 9 : Monitor - 3 7 -