JP7370881B2 - ウエーハ加工方法、及びウエーハ加工装置 - Google Patents
ウエーハ加工方法、及びウエーハ加工装置 Download PDFInfo
- Publication number
- JP7370881B2 JP7370881B2 JP2020009641A JP2020009641A JP7370881B2 JP 7370881 B2 JP7370881 B2 JP 7370881B2 JP 2020009641 A JP2020009641 A JP 2020009641A JP 2020009641 A JP2020009641 A JP 2020009641A JP 7370881 B2 JP7370881 B2 JP 7370881B2
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- laser beam
- thermal stress
- stress wave
- pulsed laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
- B28D5/0011—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
- B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/362—Laser etching
- B23K26/364—Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D1/00—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor
- B28D1/22—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor by cutting, e.g. incising
- B28D1/221—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor by cutting, e.g. incising by thermic methods
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Mechanical Engineering (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Plasma & Fusion (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Mining & Mineral Resources (AREA)
- Dicing (AREA)
- Laser Beam Processing (AREA)
Description
波長 :355nm
繰り返し周波数 :50kHz
平均出力 :1W
パルス幅 :100ps以下
波長 :1064nm
繰り返し周波数 :50kHz
平均出力 :10W
パルス幅 :10ns
3:基台
4:保持手段
21:X軸方向可動板
22:Y軸方向可動板
25:チャックテーブル
25a:保持面
27:クランプ
6A:第一レーザー光線生成部
61:第一レーザー光線発振手段
611:第一レーザー発振器
612:第一アッテネータ
62:反射ミラー
6B:第二レーザー光線生成部
63:第二レーザー光線発振手段
631:第二レーザー発振器
632:第二アッテネータ
64:遅延手段
6C:レーザー光線導入部
65:ダイクロイックミラー
66:反射ミラー
67:集光器
671:fθレンズ
7:撮像手段
10:ウエーハ
10a:表面
10b:裏面
12:デバイス
12’:デバイスチップ
14:分割予定ライン
30:移動手段
31:X軸方向送り手段
32:Y軸方向送り手段
37:枠体
37a:垂直壁部
37b:水平壁部
70:分割装置
71:フレーム保持部材
72:クランプ
73:拡張ドラム
PL1:第一パルスレーザー光線
PL2:第二パルスレーザー光線
S:破砕層
H1:熱応力波生成手段
H2:破砕層形成手段
Claims (2)
- ウエーハを個々のチップに分割するウエーハ加工方法であって、
保持手段にウエーハを保持する保持工程と、
該保持手段に保持されたウエーハの上面からウエーハに対して吸収性を有する波長のパルスレーザー光線を分割すべき領域に照射して熱応力波を生成し、該熱応力波を分割すべき領域の内部に伝播させる熱応力波生成工程と、
該熱応力波生成工程において生成された熱応力波がウエーハの材質に応じた音速で内部に伝播し分割起点を生成すべき深さ位置に達する時間に合わせてウエーハに対して透過性を有する波長のパルスレーザー光線をウエーハの上面から照射して該熱応力波の引っ張り応力でバンドギャップが狭くなった領域で該透過性を有する波長のパルスレーザー光線の吸収を生じさせて分割起点となる破砕層を形成する破砕層形成工程と、
該破砕層を分割の起点としてウエーハを個々のチップに分割する分割工程と、
を含み構成されるウエーハ加工方法。 - ウエーハを個々のチップに分割する分割起点を形成するウエーハ加工装置であって、
ウエーハを保持する保持手段と、
該保持手段に保持されたウエーハの上面からウエーハに対して吸収性を有する波長のパルスレーザー光線を分割すべき領域に照射して熱応力波を生成し、該熱応力波を分割すべき領域の内部に伝播させる熱応力波生成手段と、
該熱応力波生成手段によって生成された熱応力波がウエーハの材質に応じた音速で分割すべき領域の内部に伝播し分割起点を生成すべき深さ位置に達する時間に合わせてウエーハに対して透過性を有する波長のパルスレーザー光線をウエーハの上面から照射して該熱応力波の引っ張り応力でバンドギャップが狭くなった領域で該透過性を有する波長のパルスレーザー光線の吸収を生じさせて分割起点となる破砕層を形成する破砕層形成手段と、
を含み構成されるウエーハ加工装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2020009641A JP7370881B2 (ja) | 2020-01-24 | 2020-01-24 | ウエーハ加工方法、及びウエーハ加工装置 |
KR1020200174925A KR20210095792A (ko) | 2020-01-24 | 2020-12-15 | 웨이퍼 가공 방법, 및 웨이퍼 가공 장치 |
US17/142,429 US11721584B2 (en) | 2020-01-24 | 2021-01-06 | Wafer processing method including crushed layer and wafer processing apparatus |
CN202110060823.3A CN113178415A (zh) | 2020-01-24 | 2021-01-18 | 晶片加工方法和晶片加工装置 |
TW110102313A TW202129730A (zh) | 2020-01-24 | 2021-01-21 | 晶圓加工方法以及晶圓加工裝置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2020009641A JP7370881B2 (ja) | 2020-01-24 | 2020-01-24 | ウエーハ加工方法、及びウエーハ加工装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2021118238A JP2021118238A (ja) | 2021-08-10 |
JP7370881B2 true JP7370881B2 (ja) | 2023-10-30 |
Family
ID=76921720
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2020009641A Active JP7370881B2 (ja) | 2020-01-24 | 2020-01-24 | ウエーハ加工方法、及びウエーハ加工装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US11721584B2 (ja) |
JP (1) | JP7370881B2 (ja) |
KR (1) | KR20210095792A (ja) |
CN (1) | CN113178415A (ja) |
TW (1) | TW202129730A (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7355618B2 (ja) * | 2018-12-04 | 2023-10-03 | 株式会社ディスコ | ウエーハ分割装置 |
CN113601027A (zh) * | 2021-08-04 | 2021-11-05 | 广东工业大学 | 一种双激光复合隐形切割方法及加工系统 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2017217335A1 (ja) | 2016-06-13 | 2017-12-21 | 三菱電機株式会社 | 半導体装置の製造方法 |
JP2019130538A (ja) | 2018-01-29 | 2019-08-08 | 浜松ホトニクス株式会社 | 加工装置 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10305420A (ja) | 1997-03-04 | 1998-11-17 | Ngk Insulators Ltd | 酸化物単結晶からなる母材の加工方法、機能性デバイスの製造方法 |
JP4659301B2 (ja) * | 2001-09-12 | 2011-03-30 | 浜松ホトニクス株式会社 | レーザ加工方法 |
JP5513272B2 (ja) | 2010-06-15 | 2014-06-04 | 株式会社ディスコ | チャックテーブルに保持された被加工物の高さ位置計測装置およびレーザー加工機 |
JP2015069975A (ja) * | 2013-09-26 | 2015-04-13 | 株式会社ディスコ | 被加工物の加工方法 |
-
2020
- 2020-01-24 JP JP2020009641A patent/JP7370881B2/ja active Active
- 2020-12-15 KR KR1020200174925A patent/KR20210095792A/ko active Search and Examination
-
2021
- 2021-01-06 US US17/142,429 patent/US11721584B2/en active Active
- 2021-01-18 CN CN202110060823.3A patent/CN113178415A/zh active Pending
- 2021-01-21 TW TW110102313A patent/TW202129730A/zh unknown
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2017217335A1 (ja) | 2016-06-13 | 2017-12-21 | 三菱電機株式会社 | 半導体装置の製造方法 |
JP2019130538A (ja) | 2018-01-29 | 2019-08-08 | 浜松ホトニクス株式会社 | 加工装置 |
Also Published As
Publication number | Publication date |
---|---|
TW202129730A (zh) | 2021-08-01 |
US20210233814A1 (en) | 2021-07-29 |
KR20210095792A (ko) | 2021-08-03 |
CN113178415A (zh) | 2021-07-27 |
US11721584B2 (en) | 2023-08-08 |
JP2021118238A (ja) | 2021-08-10 |
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