TWI296554B - Laser processing method - Google Patents
Laser processing method Download PDFInfo
- Publication number
- TWI296554B TWI296554B TW092105294A TW92105294A TWI296554B TW I296554 B TWI296554 B TW I296554B TW 092105294 A TW092105294 A TW 092105294A TW 92105294 A TW92105294 A TW 92105294A TW I296554 B TWI296554 B TW I296554B
- Authority
- TW
- Taiwan
- Prior art keywords
- region
- processed
- modified region
- laser
- laser light
- Prior art date
Links
- 238000003672 processing method Methods 0.000 title claims description 51
- 238000005520 cutting process Methods 0.000 claims description 101
- 238000012545 processing Methods 0.000 claims description 53
- 238000010521 absorption reaction Methods 0.000 claims description 30
- 230000008859 change Effects 0.000 claims description 17
- 239000004065 semiconductor Substances 0.000 claims description 17
- 239000013078 crystal Substances 0.000 claims description 12
- 230000001678 irradiating effect Effects 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 10
- 230000015572 biosynthetic process Effects 0.000 claims description 8
- 230000035699 permeability Effects 0.000 claims description 5
- 101100008044 Caenorhabditis elegans cut-1 gene Proteins 0.000 claims 1
- 239000000654 additive Substances 0.000 claims 1
- 230000000996 additive effect Effects 0.000 claims 1
- 238000000926 separation method Methods 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 38
- 230000035882 stress Effects 0.000 description 22
- 101100008049 Caenorhabditis elegans cut-5 gene Proteins 0.000 description 21
- 239000000758 substrate Substances 0.000 description 14
- 230000005684 electric field Effects 0.000 description 9
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 9
- 239000011521 glass Substances 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 7
- 238000003825 pressing Methods 0.000 description 7
- 238000002407 reforming Methods 0.000 description 7
- 230000008646 thermal stress Effects 0.000 description 6
- 238000002834 transmittance Methods 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 239000004576 sand Substances 0.000 description 4
- 229910003460 diamond Inorganic materials 0.000 description 3
- 239000010432 diamond Substances 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- 238000003384 imaging method Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical group [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- 230000002745 absorbent Effects 0.000 description 2
- 239000002250 absorbent Substances 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000005441 aurora Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000010128 melt processing Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 239000005297 pyrex Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 238000010008 shearing Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- WGPCGCOKHWGKJJ-UHFFFAOYSA-N sulfanylidenezinc Chemical group [Zn]=S WGPCGCOKHWGKJJ-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B33/00—Severing cooled glass
- C03B33/09—Severing cooled glass by thermal shock
- C03B33/091—Severing cooled glass by thermal shock using at least one focussed radiation beam, e.g. laser beam
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P40/00—Technologies relating to the processing of minerals
- Y02P40/50—Glass production, e.g. reusing waste heat during processing or shaping
- Y02P40/57—Improving the yield, e-g- reduction of reject rates
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Toxicology (AREA)
- Thermal Sciences (AREA)
- Optics & Photonics (AREA)
- Health & Medical Sciences (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Dicing (AREA)
- Laser Beam Processing (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001277186A JP4659301B2 (ja) | 2001-09-12 | 2001-09-12 | レーザ加工方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200417438A TW200417438A (en) | 2004-09-16 |
TWI296554B true TWI296554B (en) | 2008-05-11 |
Family
ID=19101756
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW092105294A TWI296554B (en) | 2001-09-12 | 2003-03-12 | Laser processing method |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP4659301B2 (enrdf_load_stackoverflow) |
TW (1) | TWI296554B (enrdf_load_stackoverflow) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102004012402B3 (de) * | 2004-03-13 | 2005-08-25 | Schott Ag | Verfahren zum Freiformschneiden von gewölbten Substraten aus sprödbrüchigem Material |
DE102004014277A1 (de) * | 2004-03-22 | 2005-10-20 | Fraunhofer Ges Forschung | Verfahren zum laserthermischen Trennen von Flachgläsern |
JP4631044B2 (ja) * | 2004-05-26 | 2011-02-16 | 国立大学法人北海道大学 | レーザ加工方法および装置 |
US7662668B2 (en) * | 2005-11-16 | 2010-02-16 | Denso Corporation | Method for separating a semiconductor substrate into a plurality of chips along with a cutting line on the semiconductor substrate |
EP2480507A1 (en) | 2009-08-28 | 2012-08-01 | Corning Incorporated | Methods for laser cutting articles from chemically strengthened glass substrates |
JP5862088B2 (ja) * | 2011-07-22 | 2016-02-16 | アイシン精機株式会社 | レーザによる割断方法、およびレーザ割断装置 |
US9828278B2 (en) | 2012-02-28 | 2017-11-28 | Electro Scientific Industries, Inc. | Method and apparatus for separation of strengthened glass and articles produced thereby |
US10357850B2 (en) | 2012-09-24 | 2019-07-23 | Electro Scientific Industries, Inc. | Method and apparatus for machining a workpiece |
WO2014030521A1 (ja) * | 2012-08-21 | 2014-02-27 | 旭硝子株式会社 | 複合シートの切断方法、ガラスシートの切断方法、複合シートの切断片 |
JP6320261B2 (ja) * | 2014-09-26 | 2018-05-09 | 株式会社ディスコ | ウエーハの加工方法 |
JP2016129203A (ja) * | 2015-01-09 | 2016-07-14 | 株式会社ディスコ | ウエーハの加工方法 |
KR101812209B1 (ko) * | 2016-02-16 | 2017-12-26 | 주식회사 이오테크닉스 | 레이저 마킹 장치 및 레이저 마킹 방법 |
JP7217585B2 (ja) * | 2017-04-13 | 2023-02-03 | 株式会社ディスコ | 分割方法 |
JP7210910B2 (ja) * | 2017-08-22 | 2023-01-24 | 日本電気硝子株式会社 | ガラス物品の製造方法及びガラス物品の製造装置 |
US11024501B2 (en) | 2018-12-29 | 2021-06-01 | Cree, Inc. | Carrier-assisted method for parting crystalline material along laser damage region |
US10576585B1 (en) | 2018-12-29 | 2020-03-03 | Cree, Inc. | Laser-assisted method for parting crystalline material |
US10562130B1 (en) | 2018-12-29 | 2020-02-18 | Cree, Inc. | Laser-assisted method for parting crystalline material |
US10611052B1 (en) | 2019-05-17 | 2020-04-07 | Cree, Inc. | Silicon carbide wafers with relaxed positive bow and related methods |
JP7370881B2 (ja) * | 2020-01-24 | 2023-10-30 | 株式会社ディスコ | ウエーハ加工方法、及びウエーハ加工装置 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2810151B2 (ja) * | 1989-10-07 | 1998-10-15 | ホーヤ株式会社 | レーザマーキング方法 |
JPH04167985A (ja) * | 1990-10-31 | 1992-06-16 | Nagasaki Pref Gov | ウェハの割断方法 |
JP3660741B2 (ja) * | 1996-03-22 | 2005-06-15 | 株式会社日立製作所 | 電子回路装置の製造方法 |
JP3449201B2 (ja) * | 1997-11-28 | 2003-09-22 | 日亜化学工業株式会社 | 窒化物半導体素子の製造方法 |
-
2001
- 2001-09-12 JP JP2001277186A patent/JP4659301B2/ja not_active Expired - Lifetime
-
2003
- 2003-03-12 TW TW092105294A patent/TWI296554B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
JP2003088976A (ja) | 2003-03-25 |
TW200417438A (en) | 2004-09-16 |
JP4659301B2 (ja) | 2011-03-30 |
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MK4A | Expiration of patent term of an invention patent |