TWI295313B - Surface treatment method of wiring board and manufacturing method for electric device - Google Patents

Surface treatment method of wiring board and manufacturing method for electric device Download PDF

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Publication number
TWI295313B
TWI295313B TW093139272A TW93139272A TWI295313B TW I295313 B TWI295313 B TW I295313B TW 093139272 A TW093139272 A TW 093139272A TW 93139272 A TW93139272 A TW 93139272A TW I295313 B TWI295313 B TW I295313B
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TW
Taiwan
Prior art keywords
wiring board
metal wiring
substrate
wiring layer
layer
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TW093139272A
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Chinese (zh)
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TW200521204A (en
Inventor
Masaru Ugajin
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Sony Chemicals Corp
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    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/22Secondary treatment of printed circuits
    • H05K3/26Cleaning or polishing of the conductive pattern
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/07Electric details
    • H05K2201/0753Insulation
    • H05K2201/0761Insulation resistance, e.g. of the surface of the PCB between the conductors
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/09Treatments involving charged particles
    • H05K2203/095Plasma, e.g. for treating a substrate to improve adhesion with a conductor or for cleaning holes

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Plasma Technology (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)

Description

1295313 九、發明說明: 【發明所屬之技術領域】 本發明係關於在配線板裝載電氣零件之技術, 1寸別疋關 於配線板之表面處理技術。 【先前技術】 以往,在軟性配線板等的配線板上透過黏著劑來裴載半 導體元件前,為提昇配線板與黏著劑之親和性須進行表面 處理。 白知之表面處理所採用的方法,係將配線板配置於真空 槽内,使該真空槽内形成真空環境氣氛,於此狀態下藉由 輝光放電來產生電i,利用該電襞來進行表面處理。^知 之輝光放電法,不僅處理裝置之製造成本高,i因必須將 處理至内施以真空排氣,故作業時間變長。 使用電漿之表面處理方法,有一方法係在連通於大氣之 处理至内產生電漿,而使處理對象物曝露於該電漿中,依 方法1由於電漿產生時不須形成真空環境氣氛,故處 衣置之製造成本低’且作業時間短(例如參照專利文獻1)。 处皮然而’若在處理室連通於大氣之狀態下產生電漿,則可 大=成孟羼之腐蝕。特別是,當金屬配線係由銅構成時, 々中的氮會和銅反應,而在金屬配線表面形成硝酸銅。 特另丨J是,若尤人思 , 孟屬配線之狹窄部分構成的配線部形成硝酸 鋼’則可能造成該配線部之斷線。 〔專利文獻丨〕曰本特開平10-154598號公報 【發明内容】 1295313 本發明係為解決習知技術之問題點而創作者,其目的( 提供一不致使金屬配線腐蝕之配線板表面處理技術。、係 為了解決上述課題,本發明之配線板之表面處理方法 該配線板具有··基材、及以既定平面形狀圖案化而配置於 基材上之金屬配線層,在金屬配線層之至少局部表面上, 配置:與金屬配線層大致相等的平面形狀圖案化之保護 層,藉保護層及金屬配線層來形成積層膜,且於積層膜之 間露出基材表面,使配線板之積層膜形成側表面曝^電 漿後’將保護層從金屬配線層上除去。 本發明之表面處理方法,係在除去保護層後,在除去保 護層後之金屬配線層表面、及位於金屬配線層間之基材表 面上’配置黏著劑。 本么月之配線板之表面處理方法中,該金屬配線層之圖 案化’係纟基材上配置圖案化前之金屬酉己線層後,使圖案 化後之保護層位於金屬配線層上,將露出於保護層間之金 屬配線層予以蝕刻除去。 本發明之配線板之表面處理方法,該配線板具有··基 材及配置在基材上之金屬配線層,在金屬配線層配置側 的表面上设置被覆膜’除去該被覆膜的一部分,而使配線 板,局部露出、其他部分則以被覆膜覆蓋,將配線板之被 覆膜配置側的表面曝露於電浆。 +將本發明之配線板之表面處理方法,係在將配線板曝露於 电水後’在除去被覆膜後之局部金屬配線層表面、及金屬 配線層間所露出之基材表面上,配置黏著劑。 I295313 本發明之配線板之表面處理方法中,該基材係由樹脂膜 構成。 6本發明乂配線板之表面處理方法,係將基材設置於處理 至(内部具有電極嘴)之第-、第二開口間,從電極嘴對配線 板贺附處理氣體,對電極嘴施加電壓,以在配線板的表面 附近形成電漿。 本lx明之配線板之表面處理方法,係將處理氣體與水分 氣體一起噴附於配線板,藉此形成電漿。 本鲞明之電氣裝置之製造方法,係在配線板之黏著劑配 襄面設置電氣零件,透過黏著劑來連接電氣零件與配線板 而製造電氣裝置; 該配線板具有··基材、及以既定平面形狀圖案化而配置 於基材上之金屬配線層,在金屬配線層之至少局部表面 上配置以與金屬配線層大致相等的平面形狀圖案化之保 護層’藉保護層及金屬配線層來形成積層膜,且於積層膜 之間路出基材表面,使配線板之積層膜形成側表面曝露於 電漿後,將保護層從金屬配線層上除去後,在除去保護層 後之金屬配線層表面、及位於金屬配線層間之基材表面 上,配置黏著劑。 本舍明之電氣裝置之製造方法,係在配線板之黏著劑配 爹面设置電氣零件,透過黏著劑來連接電氣零件與配線板 而製造電氣裝置; 違配線板具有··基材、及配置在基材上之金屬配線層, 在金屬配線層配置側的表面上設置被覆膜,除去該被覆膜 1295313 其他部分則以被覆膜 面曝露於電漿後,在 、及金屬配線層間所 的一部分,而使配線板之局部露出、 復盖’將配線板之被覆膜配置側的表 除去被覆膜後之局部金屬配線層表面 露出之基材表面上,配置黏著劑。 依據上述構成,在金屬配線層的表㈣成保護層時,a 配線板表面曝露於電漿時金屬配線層被保護層所保護: 金屬配線層不致因電漿而產生劣化。 依據本發明之表面處理方法,在進行電漿處理時並 在所有金屬配線層上均形成保護層。例如,不須塗布㈣ 劑而未進行電漿處理的部分,則使金屬配線層露出亦 一般而言,若基材表面上有油分等污染物質之附著,則 基材與黎著劑之黏著性會變i。依據本發明<表面處理方 $,在配線板製程中就算在基材表面有污染物質之附著, 藉由使積層膜間所露出的基材表面曝露於電漿,即可將污 染物質分解除去,故電漿處理後之配線板與黏著劑之处2 性變高。 *考 士依據本發明之表面處理方法,當樹脂膜表面實施電漿處 理時,由於金屬配線層被掛脂膜所保護,故金屬配線層= 致腐餘。又,金屬配線層中,僅使連接用之寬廣部從被覆 膜露出、而使金屬配線層之狹窄部用被覆膜覆蓋,只要以 此狀態進行電漿處理,由於狹窄部不致被電漿腐蝕,故狹 窄部構成之金屬配線層配線部不會產生斷線。因此,依據 本發明’由於能以不致使金屬配線層劣化的方式進行表面 處理,只要在表面處理後的配線板連接電氣零件,即可势 1295313 得高連接可靠性之電氣裝置。 【實施方式】 以下參照圖式說明本發明之實施形態。圖的符號 η代表長形樹脂膜構成的基材’在基材"表面形成_ 膜構成的金屬配線層14。 為了製作配線板,係在金屬配線層14的表面塗布含感 光性樹脂之光阻用塗布液,經加熱而形成樹月旨保護層後: 使用光罩進行曝光、顯影,以將保護層圖案化成既定形狀。 由於基材11比光罩長,…次曝光可曝光的區域有限, 故須反覆進行使用光罩之曝光、顯影,使保護層全面均曝 光顯影後’在金屬配線層14上之各既定區域形成具有相同 圖案的保護層。 /圖1(b)之符號18代表以既定平面形狀圖案化而成之保 濩層,從圖案化之保護層18間露出金屬配線層14。 其次,藉由餘刻製程,在殘留保護層18下,將保護層 is間所露出之金屬配線層14餘刻至基材η露出為止,如 此將孟屬配線層14圖案化成平面形狀與保護層a相同。 圖1⑷的符號15代表圖案化的金蜃配線層·,由該圖案 化的孟屬配線;| 1 5與基材u來構成配線板工〇。金屬配線 層15上殘留有保護層18,由該圖案化的金屬配線層η、 與殘留於金屬配線声1 $ μ ' 5上的保禮層1 8來構成積層膜1 3, 從該積層膜13間露出基材^。 圖3之们虎1代表用來對配線板} 〇實施電聚處理之處 里破置處理裝置1具有處理室3卜在處理室3 1的側壁形 1295313 成第、第二開口 Μ、33。經由第一、楚一 使處理室3 1的& * 、第二開口 3 2、3 3,1295313 IX. Description of the Invention: [Technical Field of the Invention] The present invention relates to a technique for loading electrical parts on a wiring board, and a 1-inch surface treatment technology for the wiring board. [Prior Art] Conventionally, before the semiconductor element is mounted on a wiring board such as a flexible wiring board by an adhesive, surface treatment is required to improve the affinity between the wiring board and the adhesive. The method used for the surface treatment of the white is to arrange the wiring board in the vacuum chamber to form a vacuum atmosphere in the vacuum chamber. In this state, the electric discharge i is generated by glow discharge, and the surface is processed by the electric discharge. . The known glow discharge method not only has a high manufacturing cost of the processing apparatus, but also requires a vacuum evacuation process to be applied to the inside, so that the working time becomes long. In the surface treatment method using plasma, there is a method in which plasma is generated in the process of being connected to the atmosphere, and the object to be treated is exposed to the plasma. According to the method 1, the plasma atmosphere does not need to be formed when the plasma is generated. Therefore, the manufacturing cost of the clothes set is low and the working time is short (for example, refer to Patent Document 1). If the plasma is generated in a state where the processing chamber is connected to the atmosphere, it can be as large as the corrosion of Mengzi. In particular, when the metal wiring is composed of copper, nitrogen in the crucible reacts with copper to form copper nitrate on the surface of the metal wiring. In other words, if the wiring portion formed by the narrow portion of the Meng wiring is formed of nitric acid, the wiring portion may be broken. [Patent Document 曰 曰 特 10 10 10 10 10 10 10 12 12 12 12 12 953 953 953 953 953 953 953 953 953 953 953 953 953 953 953 953 953 953 953 953 953 953 953 953 953 953 953 953 953 953 953 953 953 953 953 953 953 953 953 In order to solve the above problems, a surface treatment method for a wiring board according to the present invention includes a substrate, and a metal wiring layer which is patterned on a substrate and patterned in a predetermined planar shape, and is at least a metal wiring layer. On the partial surface, a protective layer patterned in a planar shape substantially equal to the metal wiring layer is disposed, and a laminated film is formed by the protective layer and the metal wiring layer, and the surface of the substrate is exposed between the laminated films to laminate the wiring board After the side surface is exposed to the plasma, the protective layer is removed from the metal wiring layer. The surface treatment method of the present invention is after removing the protective layer, on the surface of the metal wiring layer after removing the protective layer, and between the metal wiring layers. The adhesive is disposed on the surface of the substrate. In the surface treatment method of the wiring board of this month, the patterned metal wiring layer is patterned on the substrate. After the patterned metal ruthenium layer is disposed, the patterned protective layer is placed on the metal wiring layer, and the metal wiring layer exposed between the protective layers is etched and removed. The surface treatment method of the wiring board of the present invention, the wiring The board has a base material and a metal wiring layer disposed on the base material, and a coating film is provided on the surface on the side where the metal wiring layer is disposed to remove a part of the coating film, and the wiring board is partially exposed, and other portions are exposed. Covering with a coating film, the surface of the wiring board on the side of the coating film is exposed to the plasma. The surface treatment method of the wiring board of the present invention is to remove the coating film after exposing the wiring board to electric water. The adhesive is disposed on the surface of the local metal wiring layer and the surface of the substrate exposed between the metal wiring layers. I295313 In the surface treatment method of the wiring board of the present invention, the substrate is made of a resin film. The surface treatment method of the board is to place the substrate between the first and second openings (to the inside of the electrode tip), and to attach the processing gas to the wiring board from the electrode nozzle, the counter electrode A voltage is applied to form a plasma near the surface of the wiring board. The surface treatment method of the wiring board of the present invention is to spray a processing gas together with a moisture gas on a wiring board to form a plasma. In the manufacturing method, an electrical component is provided on an adhesive surface of a wiring board, and an electrical component is manufactured by connecting an electrical component and a wiring board through an adhesive; the wiring board has a substrate and is patterned in a predetermined planar shape. The metal wiring layer on the substrate is provided with a protective layer of a planar shape substantially equal to the metal wiring layer, and a protective layer and a metal wiring layer are formed on at least a part of the surface of the metal wiring layer to form a laminated film. After the film is separated from the surface of the substrate, the laminated film forming side surface of the wiring board is exposed to the plasma, and after the protective layer is removed from the metal wiring layer, the surface of the metal wiring layer after the protective layer is removed, and the metal wiring is located. An adhesive is disposed on the surface of the substrate between the layers. The manufacturing method of the electric device of the present invention is to provide an electrical component on the adhesive dispensing surface of the wiring board, and to connect the electrical component and the wiring board through the adhesive to manufacture an electrical device; the wiring board has a substrate and is disposed in A metal wiring layer on the substrate is provided with a coating film on the surface on the metal wiring layer side, and the other portion of the coating film 1295313 is removed, and the coating film surface is exposed to the plasma, and between the metal wiring layers. In some cases, a part of the wiring board is exposed and covered. The adhesive is disposed on the surface of the substrate on which the surface of the partial metal wiring layer after the coating film is removed from the surface on which the coating film is disposed. According to the above configuration, when the surface (4) of the metal wiring layer is formed as a protective layer, the metal wiring layer is protected by the protective layer when the surface of the wiring board is exposed to the plasma: the metal wiring layer is not deteriorated by the plasma. According to the surface treatment method of the present invention, a protective layer is formed on all the metal wiring layers at the time of plasma treatment. For example, a portion where the coating agent is not applied without being subjected to plasma treatment exposes the metal wiring layer. Generally, if the surface of the substrate is adhered to a contaminant such as oil, the adhesion of the substrate to the coating agent is used. Will change i. According to the present invention, in the wiring board process, even if the surface of the substrate is contaminated by the adhesion of the substrate, the surface of the substrate exposed between the laminated films is exposed to the plasma to decompose the pollutants. Therefore, the wiring board and the adhesive after the plasma treatment are highly improved. * According to the surface treatment method of the present invention, when the surface of the resin film is subjected to plasma treatment, since the metal wiring layer is protected by the grease film, the metal wiring layer = corrosion. Further, in the metal wiring layer, only the wide portion for connection is exposed from the coating film, and the narrow portion of the metal wiring layer is covered with the coating film. If the plasma treatment is performed in this state, the narrow portion is not plasma-treated. Since it is corroded, the metal wiring layer wiring portion formed in the narrow portion does not break. Therefore, according to the present invention, since the surface treatment can be performed so as not to deteriorate the metal wiring layer, it is possible to obtain an electrical device having high connection reliability by connecting the electrical components to the wiring board after the surface treatment. [Embodiment] Hereinafter, embodiments of the present invention will be described with reference to the drawings. The symbol η of the drawing represents a substrate constituting a metal wiring layer 14 composed of a film formed of a long resin film. In order to produce a wiring board, a coating liquid for a photoresist containing a photosensitive resin is applied onto the surface of the metal wiring layer 14 and after heating to form a protective layer of a tree layer: exposure and development are performed using a photomask to pattern the protective layer. The shape is fixed. Since the substrate 11 is longer than the reticle, the area in which the sub-exposure can be exposed is limited, so that the exposure and development using the reticle are repeated, and the protective layer is uniformly exposed and developed, and then the respective regions on the metal wiring layer 14 are formed. A protective layer having the same pattern. The reference numeral 18 of Fig. 1(b) represents a protective layer patterned in a predetermined planar shape, and the metal wiring layer 14 is exposed between the patterned protective layers 18. Next, by the residual etching process, the metal wiring layer 14 exposed between the protective layers is left until the substrate η is exposed, so that the Meng wiring layer 14 is patterned into a planar shape and a protective layer. a is the same. Reference numeral 15 in Fig. 1 (4) denotes a patterned metal ruthenium wiring layer, and the wiring pattern is formed by the patterned smectic wiring; | 15 and the substrate u. The protective layer 18 remains on the metal wiring layer 15, and the laminated film 13 is formed from the patterned metal wiring layer η and the protective layer 18 remaining on the metal wiring sound 1 $ μ '5, from which the laminated film is formed. 13 exposed substrates ^. The tiger 1 in Fig. 3 represents a place where the wiring board 〇 is subjected to electropolymerization. The rupture processing apparatus 1 has a processing chamber 3 in the side wall shape 1295313 of the processing chamber 31 to form first and second openings Μ, 33. Via the first, the first one, the processing chamber 3 1 & *, the second opening 3 2, 3 3,

、内邛空間連通於處理I 在處理室h + 免理至31外部之大氣。 3 1内部配置電極嘴3 6 板1 〇呈捲筒壯继 下σΡ電極3 7,配線 得问狀裝設於處理裝置卜 ^ (以積層臈13形# ^ 、兄線板1〇的外周端部 化成面朝向電極嘴36的办 出後通過第—f1 $ 、 攸配線板捲筒拉 再通過第-門極嘴36與下部電極37間、 冉n弟—開口 33而在處理室 線板⑺即成為橫渡第―、第 卩力轉取’如此配 態。 弟—開口 32、33間而配置的狀 在處理室3 1外部西己罟古牵田 俨高[…… 卩配置有處理氧體高壓容器4卜添加氣 月旦同丛·裔4 2、畫去 ':由哭yf《 σσ ,处理氧體高壓容器41之一部 =理《係直接送至電極*36,其他部分則經由鼓泡器 =%極嘴36,添加氣體高壓容器之添加氣體係直接送 ^極嘴36,亦即對電極嘴36供給的氣體包含··處理氣體、 添加氣體、及藉鼓泡㈣而添加至處理氣體之水分氣體。 mm㈣36之處理氣體、添加氣體與水分氣體三 者之混合氣體’係從電極嘴36之噴出口朝向配線板1〇喷 出’位於配線& 1G與電極嘴36間之大氣則被該混合氣體 所擠出。 從配線板10與電極嘴36間擠出的大氣,係與處理室 3!内部殘留的大氣一起順著混合氣體的流勢向處理室31外 4擠出’故處理室3 1内部的大氣濃度變低。 又,藉由喷出的混合氣體流可防止大氣侵入配線板1〇 與電極嘴36間的空間,故配線板〗〇與電極嘴36間的空間 1295313 之大氣濃度非常低。 於此狀態’捲動捲筒而使配線板1 〇沿長邊方向行進。 第一、第二開口 32、33於配線板1 〇行進時並未封閉,由 於處理室3 1内部與外部的大氣連通,伴隨的配線板的 行進雖會將大氣捲入處理室3丨内,但在配線板丨〇行進時 仍會從電極嘴36噴出混合氣體,故侵入處理室31内部的 大氣會被排至處理室3丨外部。 P逍著配線板1 〇之行進,當配線板1 〇之待處理區域位於 電極嘴36與下部電極37間時,使配線板1〇呈靜止。 在配線板10呈靜止的狀態下,邊從電極嘴36噴出混合 氣體、邊在電極嘴36與下部電極37間施加電壓,藉此在 配線板10與電極嘴36之間產生混合氣體之電漿。 圖1(d)之符號28代表混合氣體的電漿,如上述般,由 於從積層膜13間露出基材n的表面,附著於基材u表面 之油分等污染物質將被電漿分解,且構成基材n之樹脂會 和電漿反應,而在基材丨i表面形成官能基(電漿處理” 於電漿處理時,由,於金屬配線層15表面被保護層Μ 所覆蓋,故金屬配線層15的表面受保護層18之保護。因 此,當金屬配線層15由鋼構成時,就算處理室31内部有 大氣入侵,也不會因電聚而在金屬酉己線層15纟面形成硝酸 鋼(與大氣成分之反應物),故不致造成金屬配線層Μ之腐 *虫。 & 當配線板10進行既定時間的電漿處理後,停止對電 嘴36之施加電屢,結束電漿處理。然後,使配線板^ 1295313 進’當配線板ίο之未處理區域到達電極嘴36與下部電極 37間時,使配線才反1〇呈靜止’進行上述電聚處理。如此般, 藉由反覆進行電漿處理,可在長形配線板之必要區域:進 行電漿處理。 在下。|^电極37上配置固體介電膜38 %將下部電極37之電極嘴:膜 處理時下部電極37與電極嘴36門不:故在電漿 此不會因心“ Η Μ間不致產生電弧放電,因 曰 電弧放黾而弄傷配線板1 〇。 屬配Γ護層18在電漿處理製程時曝露於電裝中,故其與金 屬配線層1 5之黏著力蠻, ; 從金屬配始s 猎由後述的除去方法能輕易地 狀能么、'曰15表面除去。圖1(e)顯示保護層18除去後的 :、,屬配線層15的表面、與位於金屬配線層Μ間之 基材11表面係呈露出。 保4層18之除去方法,可採用以往泛用之各 例如用鹼性蝕刻液之濕餘 ' 於t Μ ^紅 j沄寺,但較隹的方法,係對位 少者線層15間之基材11表面之電㈣理面的影響較 大』=了法,係準備一膠帶(其與保護層18間的黏著力 合於保8與金屬配線層15間的黏著力),將該膠帶貼 從金屬配線層15剝離。使保連層18轉印於膠帶而 2方法’係取代驗系餘刻液等化學活性較高的姓刻 二伴1广系姓刻液等化學活性較低的㈣液,使其接 觸保破層18而將保護層18予以除去。 12 1295313 圖The inner helium space is connected to the atmosphere in which the process I is in the process chamber h + to the outside of 31. 3 1 Internal configuration electrode mouth 3 6 plate 1 〇 is rolled and stretched next σ Ρ electrode 3 7, wiring is placed in the processing device 卜 ^ (to laminate 臈 13 shape # ^, the outer end of the brother line 1 〇 The portion of the chemical conversion surface facing the electrode tip 36 is passed through the first -f1 $ , the 攸 distribution plate reel and then between the first gate mouth 36 and the lower electrode 37, and the 弟n brother-opening 33 is in the processing chamber wire plate (7). That is, it is a crossover of the first and the third, and it is arranged in such a state. The younger-openings are arranged in the 32nd and the 33rd, and the shape of the opening is in the outside of the processing chamber 3, and the west is already high. 4 Bu added gas and moon with the clumps of the genus 4, painted to ': by crying yf " σσ, processing oxygen body high pressure container 41 part = rational "directly sent to the electrode * 36, the other part through the bubbler = The % nozzle 36, the additive gas system of the gas high pressure vessel is directly sent to the nozzle 36, that is, the gas supplied to the electrode nozzle 36 contains: a processing gas, a gas addition, and a moisture added to the processing gas by bubbling (4) Gas. mm (four) 36 of the processing gas, the mixed gas of the additive gas and the moisture gas 'from the electrode nozzle 36 The discharge port is ejected toward the wiring board 1'. The atmosphere between the wiring 1 and the electrode tip 36 is extruded by the mixed gas. The atmosphere extruded between the wiring board 10 and the electrode tip 36 is connected to the processing chamber 3. The internal residual atmosphere is simultaneously extruded toward the outside of the processing chamber 31 along the flow potential of the mixed gas. Therefore, the atmospheric concentration inside the processing chamber 31 becomes low. Further, the mixed mixed gas flow can prevent the atmosphere from intruding into the wiring board. Since the space between the first electrode and the electrode tip 36 is small, the atmospheric concentration of the space 1295313 between the wiring board 电极 and the electrode tip 36 is extremely low. In this state, the reel is wound and the wiring board 1 〇 is advanced in the longitudinal direction. 1. The second openings 32, 33 are not closed when the wiring board 1 is traveling. Since the inside of the processing chamber 31 is in communication with the outside atmosphere, the accompanying traveling of the wiring board may entrain the atmosphere into the processing chamber 3, but When the wiring board 丨〇 travels, the mixed gas is still ejected from the electrode nozzle 36, so that the atmosphere that has entered the inside of the processing chamber 31 is discharged to the outside of the processing chamber 3. The P is led by the wiring board 1 ,, when the wiring board 1 〇 The area to be treated is located at the electrode mouth 36 and the lower part When the number of the poles is 37, the wiring board 1 is made static. When the wiring board 10 is stationary, a mixed gas is ejected from the electrode nozzle 36, and a voltage is applied between the electrode tip 36 and the lower electrode 37. A plasma of a mixed gas is generated between the electrode 10 and the electrode tip 36. The symbol 28 of Fig. 1(d) represents a plasma of a mixed gas, and as described above, the surface of the substrate n is exposed from the laminated film 13 to adhere to the substrate. u The oil and other pollutants on the surface will be decomposed by the plasma, and the resin constituting the substrate n will react with the plasma, and a functional group will be formed on the surface of the substrate (i (plasma treatment) in the plasma treatment, The surface of the metal wiring layer 15 is covered by the protective layer ,, so that the surface of the metal wiring layer 15 is protected by the protective layer 18. Therefore, when the metal wiring layer 15 is made of steel, even if there is atmospheric intrusion inside the processing chamber 31, no nitrate steel (reactant with atmospheric components) is formed on the surface of the metal germanium layer 15 due to electropolymerization. Does not cause rot of the metal wiring layer. & When the wiring board 10 is subjected to plasma processing for a predetermined period of time, the application of the electric power to the nozzle 36 is stopped, and the plasma processing is terminated. Then, when the unprocessed area of the wiring board ίο reaches between the electrode tip 36 and the lower electrode 37, the wiring board is turned back to the left side, and the above-described electropolymerization process is performed. In this way, by repeating the plasma treatment, it is possible to perform plasma treatment in a necessary region of the elongated wiring board. Under. |^ Electrode 37 is provided with a solid dielectric film 38% of the electrode of the lower electrode 37: when the film is processed, the lower electrode 37 and the electrode nozzle 36 are not: therefore, in the plasma, there is no cause of "Arc" Discharge, damage to the wiring board 1 due to the argon arc. The enamel sheath 18 is exposed to the electrical equipment during the plasma processing process, so its adhesion to the metal wiring layer 15 is quite good; The shovel can be easily removed by the removal method described later, and the surface of the 曰15 is removed. Fig. 1(e) shows the removal of the protective layer 18, which is the surface of the wiring layer 15 and is located between the metal wiring layers. The surface of the substrate 11 is exposed. The method for removing the 4 layers 18 can be carried out by using a conventionally used wet etching solution, such as an alkaline etching solution, in the t Μ ^ 红 j沄 temple, but a relatively simple method. The influence of the electric (four) plane on the surface of the substrate 11 between the lesser layers 15 is greater. The method is to prepare a tape (the adhesion between the layer 18 and the protective layer 18 is between the 8 and the metal wiring layer 15). Adhesive force), the tape is peeled off from the metal wiring layer 15. The adhesion layer 18 is transferred to the tape and the method is replaced by the method. The chemically active (4) liquid, such as a liquid with a high chemical activity, is used to remove the protective layer 18 by contacting the protective layer 18, etc. 12 1295313

圖1(f)之符號19代表形成有膜狀黏著劑之黏著膜,如 Ug)所示般將該黏著膜19載置於配線板1G之金屬配線 其次’說明在配線板1()連接電氣零件之製程1 之符號20代表電氣零件之半導體元件。該半導體元件2〇 :有元件本體21、及配置於元件本體21 一面之突塊狀連接 而子25將半‘體疋件2G之連接端子25配置面朝向配線 板10上之黏著膜19而配置,以連接端子25面對金屬配線 層Η既定位置的方式進行定位後,將半導體元件2 於黏著膜19上。 /依此狀態,邊將半導體元件2〇緊壓邊加熱,則黏著膜 19文熱軟化,軟化後的黏著膜19被壓開,而使連接端子 25的前端抵接於金屬配線層15表面,並使軟化後的黏著膜 19密合於金屬配線層15表面、及位於金羼配線層15間的 基材11表面。 構成黏著膜19之黏著劑係含有環氧樹脂般之熱固性樹 月曰,§連接端子25抵接於金屬配線層15的狀態下再持績 加熱,則黏著膜19會以密合狀態(密合於金屬配線層15表 面、及位於金屬配線層15間的基材丨丨表面)進行硬化。 位於金屬配線層15間之基材〗丨表面,經由上述電焚處 理不僅可除去污染物質,同時可在表面形成官能基。例如, 基材Π為聚醯亞胺樹脂構成的情形,當基材1〗曝露於混 合氣體之電漿時,在基材u表面聚醯亞胺樹脂會和混合氣 體中的水分氣體反應,而形成羥基G〇H)、羧基(_C〇〇H)、 13 1295313 羰基(0 = CH)等的官能基。 由於這些官能基和構成黏著膜19之黏著劑| 親和性,故基材1 1與黏著膜19之黏著性高,鈇^好的 導體元件20強固地貼合於配線板丨〇。 、、、果可使半 圖2(b)之符號2代表在配線板10上貼八右 2〇之電氣裝置’該電氣裝置2之配線板1〇: “導體元件 上所述般配線板1 〇之金屬配線層丨5於將 σ ^ 水處理時不合姑 腐Ί虫’因此其電氣可靠性良好。 曰 以上的說明所針對的情形,係在圖案化前的 Μ上配置保護層18 ’進行該金屬配線層14的圖宰化則 成積層膜13,·但本發明並不限於此,例如可將圖宰合 金屬配線層配置於基材11上後,於該金屬配線層上配置a 案化後之保劾18(與金屬配線層之形成大致相同)而形居 積層膜13後,再進行上述電漿處理。Reference numeral 19 in Fig. 1(f) denotes an adhesive film formed with a film-like adhesive, and the adhesive film 19 is placed on the metal wiring of the wiring board 1G as shown by Ug), and the electric connection is shown in the wiring board 1 (). The symbol 20 of the process 1 of the part represents the semiconductor component of the electrical component. The semiconductor element 2 includes an element body 21 and a bump-like connection disposed on one surface of the element body 21, and the sub-section 25 is disposed such that the connection terminal 25 of the half-body element 2G faces the adhesive film 19 on the wiring board 10. After the connection terminal 25 is positioned to face the predetermined position of the metal wiring layer, the semiconductor element 2 is placed on the adhesive film 19. In this state, while the semiconductor element 2 is heated while being pressed, the adhesive film 19 is softened by heat, and the softened adhesive film 19 is pressed apart, so that the front end of the connection terminal 25 abuts on the surface of the metal wiring layer 15, The softened adhesive film 19 is adhered to the surface of the metal wiring layer 15 and the surface of the substrate 11 located between the metal wiring layers 15. The adhesive constituting the adhesive film 19 contains an epoxy resin-like thermosetting tree, and the adhesive film 19 is in a state of close contact when the connection terminal 25 is in contact with the metal wiring layer 15 and is in a close contact state (closed). The surface of the metal wiring layer 15 and the surface of the substrate 位于 between the metal wiring layers 15 are cured. The surface of the substrate between the metal wiring layers 15 can remove not only contaminants but also functional groups on the surface via the above-described electro-incineration treatment. For example, when the substrate Π is composed of a polyimide resin, when the substrate 1 is exposed to the plasma of the mixed gas, the polyimide resin on the surface of the substrate u reacts with the moisture gas in the mixed gas, and A functional group such as a hydroxyl group G〇H), a carboxyl group (_C〇〇H), and a 13 1295313 carbonyl group (0 = CH) is formed. Due to the affinity of these functional groups and the adhesive constituting the adhesive film 19, the adhesion between the substrate 11 and the adhesive film 19 is high, and the conductive member 20 is firmly bonded to the wiring board. The symbol 2 of the second figure (b) represents the electric device on the wiring board 10, and the wiring board 1 of the electric device 2: "the wiring board 1 described above on the conductor element" The metal wiring layer 丨5 of the crucible is not suitable for the treatment of σ^ water, so the electrical reliability is good. 曰 The above description is directed to the case where the protective layer 18' is disposed on the crucible before patterning. The metal wiring layer 14 is patterned to form the laminated film 13, but the present invention is not limited thereto. For example, after the metal wiring layer is placed on the substrate 11, the a wiring layer is placed on the metal wiring layer. After the formation of the protective film 18 (which is substantially the same as the formation of the metal wiring layer) and the formation of the laminated film 13, the above-mentioned plasma treatment is performed.

又,保護層18並不限於樹脂構成的情形,只要在電赞 處《能從金屬配線層上除去者皆可,例如能由㈣或金 屬等各種材料來構成保護層1 8。 以上所說明的情形,雖是針對以保護層18被覆金屬配 線層=的狀態來進行電槳處理,但本發明並不限於此。圖 符唬50代表本發明之其他表面處理方法所使用的配線 板該配線板5〇具備··樹脂膜構成的基材5卜及置於基 材W表面之金屬配線層55,基材η之金屬配線層w配置 面係貼合有樹脂構成的被覆膜52。 土屬配線層55經圖案化而形成有狹窄部56與寬廣部 14 1295313 57狹乍部56的1連接於寬廣部57。被覆膜52貼合於 配=板50之金屬配線層55配置面後,以使各寬廣部π之 至乂局°卩露出的方式進行切除而形成開口 59(半切除),在 开1 59内’見廣部57之表面、與位於寬廣部57周圍之基 材51表面係呈露ίϋ ’但金屬配線層55之狹窄部56則形成 以被覆臈52覆蓋的狀態。 為了對配線板50進行表面處理,係將配線板5〇跨設於 上述處理裝置1之第-、第二開口 32、33間,以處理室;! 内部連通大氣氣氛的狀態,從電極嘴36朝配線板5〇噴出 ::氣體、水分氣體及添加氣體所組成的混合氣體,而產 -合氣體的電漿,以從露出於開口 59底面之基材51表 ^去污_質,韻構成基材5 !之_與轉反應心 在基材51表面形成官能基。 56被被覆膜52所覆蓋。 ’就异有大氣侵入處理 面形成硝酸鋼等與大氣 56之斷線。 這時,金屬配線層55之狹窄部 因此,當金屬配線層55由銅構成時 至31内部’仍不致在狹窄部$$表 成分之反應物,而不致發生狹窄部 電漿處理後,只要在配線板1 〇 ϋ之開口 59形成部分配s 站者刎,如上述般,即可將半導體 ^ 1干20等的電氣零件遠 這時,開口 59形成部分之基材51,藉由 ::處理不僅可除去污染物質,同時會在基材5】表面形成 吕月&基,故黏著劑與基材51之黏著性 一 7丄八 ^艮好’而能將半導# 兀件20強固地固定於配線板2〇。又, , ’如上述般由於狭窄部 %不致因電漿處理產生斷線,故能 X侍連接可靠性良好的 15 I2953l3 電氣裝置。Further, the protective layer 18 is not limited to the case of a resin, and may be formed by any material such as (4) or metal, as long as it can be removed from the metal wiring layer. In the case described above, the electric paddle treatment is performed in a state in which the metal wiring layer is covered with the protective layer 18, but the present invention is not limited thereto. The symbol 唬50 represents a wiring board used in another surface treatment method of the present invention. The wiring board 5 〇 includes a substrate 5 made of a resin film and a metal wiring layer 55 placed on the surface of the substrate W, and the substrate η A coating film 52 made of a resin is bonded to the surface of the metal wiring layer w. The soil wiring layer 55 is patterned to form a narrow portion 56 and a wide portion 14 1295313 57 narrow portion 56 is connected to the wide portion 57. After the coating film 52 is bonded to the surface of the metal wiring layer 55 of the distribution plate 50, the opening 52 is cut so as to expose the wide portion π to form an opening 59 (half-cut). The surface of the wide portion 57 is exposed to the surface of the substrate 51 located around the wide portion 57. However, the narrow portion 56 of the metal wiring layer 55 is covered with the covered crucible 52. In order to surface-treat the wiring board 50, the wiring board 5 is placed between the first and second openings 32 and 33 of the processing apparatus 1 to process the chamber; the internal air atmosphere is connected to the electrode nozzle 36. The mixture is sprayed toward the wiring board 5: a mixed gas of a gas, a moisture gas, and an additive gas, and the plasma of the gas-producing gas is decontaminated from the substrate 51 exposed on the bottom surface of the opening 59. The substrate 5 and the reaction reaction core form a functional group on the surface of the substrate 51. 56 is covered by the coating film 52. In the case of a different atmospheric intrusion treatment surface, a broken line such as nitric acid or the like is formed. At this time, the narrow portion of the metal wiring layer 55 is therefore, when the metal wiring layer 55 is made of copper, and the inside of the 31 is still not in the reactant of the narrow portion of the surface component, so that the narrow portion plasma treatment is not performed, as long as the wiring is used. The opening 59 of the board 1 is formed as a part of the station, and as described above, the electrical parts of the semiconductor 1 and the like 20 can be formed far away, and the opening 59 forms part of the substrate 51 by: processing: The contaminant is removed, and the Luyue & base is formed on the surface of the substrate 5, so that the adhesion of the adhesive to the substrate 51 is good, and the semi-conductive member 20 can be firmly fixed to the surface. Wiring board 2〇. Further, as described above, since the narrow portion is not broken due to the plasma treatment, it is possible to connect the 15 I2953l3 electric device with good reliability.

从上成明的情形,雖B 後,除去被覆膜52的―^八而皆在配線板5〇貼合被覆膜52 限於 刀而形成開口 59 ;但本發明並不 開D底面的^事先於破覆膜形成開口,以寬廣部露出於該 配置面。、方式W忒被覆膜貼合於配線板之金屬配線層 以上所說明的情形,雜η 部雷托^ 隹疋針對固定介電膜38僅設於下 例,=側的情形’但例如固體介電膜也能設在電極嘴% 或=下部電極37側與電極嘴%側雙 飞?制氯氣二氨氣、氣氣等各種的稀有氣體。 玫電=使用二作為添加氣體,則能提昇電漿形成時的 時:。添加氣體並不限於氧’只要電極嘴施加電壓 例在基材11表面產生化學反應之氣體卸可, π木用氫軋、虱氣等各種反應性氣體。 ^ ’不使用添加氣體而從電極嘴36喷出處理氣 刀乳體所組成之混合氣體來進行電漿處理亦可。 开以上所說明的情形,係針對使用黏著膜叫將黏著劑成 >為膜狀而成)來製造電氣裝置2的㈣,但本發mm 、此’可將糊狀黏著劑塗布於配線板10與半導體元件如 之任彳或雙方,透過該黏著劑來貝占合配線板與半導 元件20而製造出電氣裝置。 構成基材11之樹脂並不限於聚醯亞胺樹脂,也能以聚 酯樹脂等各種樹脂來構成基材U。基材n並不限於樹2 膜,也能採用破璃基板等各種材質者。當基材】】由可挽性 16 1295313 樹脂膜構成、且金屬配線層之膜厚薄到不 p 卜双衫響基材11的 可撓性時,即構成配線板10整體具有可择 」锐性之所謂軟性配 線板。 貼合於配線板10之電氣零件並不限於半導體元件20, 例如也能貼合其他的軟性配線板、硬性基板等2種電氣灾 件來構成電氣裝置2。 电 本發明之電氣裝置製造方法所使用之㈣劑並沒有特 別的限定,當考慮到電氣裝置2之連接可靠性,則以 ,黏㈣中分散有導電性粒子之異向導電性黏I劑為佳。 黏著劑所使用之熱固性樹脂並不限於環氧樹脂,也能採 :二聚氰胺㈣、_樹脂等#。黏著劑中也能添加轨塑 树脂寺熱固性樹脂以外的樹脂、老化防止劑、著色 的添加劑。關於黏著劑,除含有熱固性樹脂者以外,^ 使用含有丙烯酸醋樹應等的光聚合性樹脂者。 "b 去以上所說明的情形,雖是針對金屬配線層 銅 者,但本發明並不限於此, 钔構成 μ * 、· 土屬配線層15也能用鋁、合今 寺各種導電性材科來構成。 ’ 金屬配線層,例如ώ其# 7 ^ 士 方'm > “ 由土材11表面上藉由蒸鍍法等成膜 ㈣ 屬缚膜所構成。又,也能以金屬.箱構成金屬 配線層’在該金屬箔 、屬 而4放1 W 土布树脂組成物並予加以燒成, 而構成樹脂膜製的基材u。 成 電極在配線板】0行進時也會從 、、曰人γ 乳紐,但本發明並不限於此,為 混合氣體的消耗量而降低成士 里而^低成本,也能在配線板1() 17 1295313 停混合氣體的喷出,而在配線板10停止行進時再 混合氣體的喷出。 #始進行 邊藉該 輕以調 又,本發明所用的處理室31可連接於排氣系, 排氣系從處理室31内部進行排氣邊喷出混合氣體, 整混合氣體從處理室3 1内部排出之排出量。 【圖式簡單說明】 圖 面圖。 1(a)〜(g)係說明本發明 之配線板表面處理 步.驟之截In the case of the above, in the case of B, the film 52 is removed from the wiring board 5, and the coating film 52 is bonded to the blade to form the opening 59. However, the present invention does not open the bottom surface of the D. An opening is formed in advance in the broken film, and the wide portion is exposed to the arrangement surface. In the case where the W 忒 coating is bonded to the metal wiring layer of the wiring board, the η portion of the retort 隹疋 is provided only for the fixed dielectric film 38 in the following example, and the case of the = side, but for example, solid The dielectric film can also be placed on the electrode tip % or = the lower electrode 37 side and the electrode tip % side to fly? Chlorine gas, such as diamine gas, gas, and other rare gases. Rose = use two as an additive gas to increase the plasma formation time: The gas to be added is not limited to oxygen. As long as a voltage is applied to the electrode tip, a gas which generates a chemical reaction on the surface of the substrate 11 is removed, and π wood is subjected to various reactive gases such as hydrogen rolling or helium gas. ^ "The gas mixture may be sprayed from the electrode nozzle 36 without using an additive gas to form a mixed gas composed of the emulsion of the air knife. In the case described above, the electric device 2 is manufactured by using an adhesive film called an adhesive to form a film. However, the present invention can apply a paste adhesive to the wiring board. 10 and the semiconductor element, for example, or both, through the adhesive, the wiring board and the semi-conductive element 20 are assembled to produce an electrical device. The resin constituting the substrate 11 is not limited to a polyimide resin, and the substrate U can be formed of various resins such as a polyester resin. The substrate n is not limited to the tree 2 film, and various materials such as a glass substrate can also be used. When the substrate] is composed of a pliable 16 1295313 resin film and the film thickness of the metal wiring layer is thin to the flexibility of the substrate 11 , the wiring board 10 as a whole has an optional sharpness. The so-called flexible wiring board. The electric component to be bonded to the wiring board 10 is not limited to the semiconductor element 20. For example, two types of electrical disaster devices such as other flexible wiring boards and rigid substrates can be bonded to each other to constitute the electric device 2. The (four) agent used in the method for producing an electric device according to the present invention is not particularly limited. When considering the connection reliability of the electric device 2, the isotropic conductive adhesive agent in which the conductive particles are dispersed in the adhesive (four) is good. The thermosetting resin used in the adhesive is not limited to an epoxy resin, and can also be used: melamine (tetra), _resin, etc. A resin other than the thermosetting resin, a aging preventive agent, and a coloring additive may be added to the adhesive. For the adhesive, in addition to those containing a thermosetting resin, use a photopolymerizable resin containing an acrylic vinegar. "b In the case of the above description, the metal wiring layer is copper, but the present invention is not limited thereto, and the 钔 constituting the μ* and the earth wiring layer 15 can also be used for various conductive materials of aluminum and Hejin Temple. Kelai constitutes. 'Metal wiring layer, for example, ώ其# 7 ^士方'm > "The film is formed by vapor deposition or the like on the surface of the soil material 11 (4). It is also a metal film. The layer 'in the metal foil and the genus 4 is placed in a 1 W soil resin composition and fired to form a substrate u made of a resin film. The electrode is also 从 γ when the wiring board is 0. In addition, the present invention is not limited to this, and it is possible to reduce the consumption of the mixed gas to a low cost, and it is also possible to stop the discharge of the mixed gas on the wiring board 1 () 17 1295313, and stop at the wiring board 10 The discharge of the mixed gas during the traveling is started. The processing chamber 31 used in the present invention can be connected to the exhaust system, and the exhaust system discharges the mixed gas from the inside of the processing chamber 31 while exhausting. The discharge amount of the entire mixed gas discharged from the inside of the processing chamber 31. [Simplified description of the drawings] Fig. 1(a) to (g) show the surface treatment steps of the wiring board of the present invention.

圖2⑷、(b)係說明電氣裝置製造步驟之 ^3係諸本發日㈣表隨理方法所 例之截面圖。 ^〜理敦j 面處理方法所使用的配線Fig. 2 (4) and (b) are cross-sectional views showing the steps of the manufacturing method of the electric device, which are exemplified by the method of the present invention. ^~The wiring used by the Lidon j-face processing method

圖4係說明本發明的其他表 板之俯視圖。 【主要元件符號說明】 卜··處理裝置 2···電氣裝置Fig. 4 is a plan view showing another panel of the present invention. [Description of main component symbols] Bu··Processing device 2···Electrical device

10···酉己、H Π…樹脂膜(基材) 1 5…金屬、配線層 20…電氣零件(半導體元件) 2 1…元件本體 25…連接端子 28···電漿 31…處理室 ]8 1295313 3 2…第一開口 33…第二開口 3 6…電極嘴10···酉, H Π...Resin film (substrate) 1 5...metal, wiring layer 20...electric parts (semiconductor element) 2 1...element body 25...connection terminal 28···plasma 31...processing chamber ] 8 1295313 3 2...first opening 33...second opening 3 6...electrode mouth

Claims (1)

t曰修(更)jE本 1295313 十、申請專利範圍: 1、 一種配線板之表面處理方法,該配線板具有:基材、 及以既定平面形狀圖案化而配置於基材上之金屬配線層, 在至屬配線層之至少局部表面上,配置以與金屬配線層大 致相等的平面形狀圖案化之保護層,藉保護層及金屬配線 層來形成積層膜’且於積層膜之間露出基材表面,使配線 板之積層膜形成側表面曝露於電漿後,將保護層從金屬配 線層上除去。 2、 如申請專利範圍第1項之配線板之表面處理方法, 係在除去保護層後,在除去保護層後之金屬配線層表面、 及位於金屬配線層間之基材表面上,配置黏著劑。 3、 如申請專利範圍第1或第2項之配線板之表面處理 方法,其中,該金屬配線層之圖案化,係在基材上配置圖 案化七之金屬配線層後,使圖案化後之保護層位於金屬配 線層上’將露出於保護層間之金屬配線層予以蝕刻除去。 4、 一種配線板之表面處理方法,該配線板具有•·基材、 及配置在基材上之金屬配線層,在金屬配線層配置側的表 面上設置被覆膜,除去該被覆膜的一部分,而使配線板之 局部露出、其他部分則以被覆膜覆蓋,將配線板之被覆膜 配置側的表面曝露於電漿。 5、 如申請專利範圍第4項之配線板之表面處理方法, 係在將配線板曝露於電漿後,在除去被覆膜後之局部金屬 配線層表面、及金屬配線層間所露出之基材表面上,配置 黏者劑。 20 1295313 6、如申請專利範圍第卜2、4、5項中任一項之配線 板之表面處理方法,其中,該基材係由樹脂膜構成。 巾月專利聋11圍第1、2、4、5項中任一項配線板 之* 方法,係將基材設置於處理室(内部具有電極嘴) 之第-、第H ’從電極嘴對配線板噴附處理氣體, 對電極嘴施加電壓,以在配線板的表面附近形成電衆。 、如申請專利範圍帛7項之配線板之表面處理方法, 係將處理I體與水分氣體—起11附於配線板,藉此形成電 漿0 9、 一種電氣裝置之製造方法,係在配線板之黏著劑配 置面設置電氣零件,透過黏著劑來連接電氣零件與配線板 而製造電氣裝置; 該配線板具有:基材、及以既定平面形狀圖案化而配 置於基材上之金屬配線層,在金屬配線層之至少局部表面 上’配置以與金屬配線層大致相等的平面形狀圖案化之保 護層,藉保護層及金屬配線層來形成積層膜,且於積層膜 之間露出基材表面,使配線板之積層膜形成側表面曝露於 電漿後’將保護層從金屬配線層上除去後,在除去保護展 後之金屬配線層表面、及位於金屬配線層間之基材表面 上,配置黏著劑。 10、 一種電氣裝置之製造方法,係在配線板之黏著劑 配置面設置電氣零件,透過黏著劑來連接電氣零件與配線 板而製造電氣裝置; 該配線板具有:基材、及配置在基材上之金屬配線層, 21 1295313 在金屬配線層配置側的表面上設置被覆膜 的一部分’而使配線板之局 丨“《後腺 覆蓋,將配線板之被覆膜g 出、其他部分則以被覆膜 除去被覆膜後之局部金屬配 、表面曝露於電漿後,在 露出之基材表面上,配置勒$層表面、及金屬配線層間所 一者劑。 十一、圖式··t曰修(more) jE本1295313 X. Patent application scope: 1. A surface treatment method for a wiring board, the wiring board having: a substrate, and a metal wiring layer patterned in a predetermined planar shape and disposed on the substrate Providing a protective layer patterned in a planar shape substantially equal to the metal wiring layer on at least a part of the surface of the wiring layer, forming a laminated film by the protective layer and the metal wiring layer, and exposing the substrate between the laminated films After the surface of the laminated film forming side of the wiring board is exposed to the plasma, the protective layer is removed from the metal wiring layer. 2. The surface treatment method of the wiring board according to the first aspect of the patent application is characterized in that after the protective layer is removed, an adhesive is disposed on the surface of the metal wiring layer after removing the protective layer and the surface of the substrate between the metal wiring layers. 3. The surface treatment method of the wiring board according to the first or second aspect of the patent application, wherein the patterning of the metal wiring layer is performed by patterning the metal wiring layer of the patterned seven on the substrate, and then patterning The protective layer is located on the metal wiring layer to etch and remove the metal wiring layer exposed between the protective layers. 4. A surface treatment method for a wiring board, comprising: a substrate, and a metal wiring layer disposed on the substrate, wherein a coating film is provided on a surface on the side of the metal wiring layer, and the coating film is removed In some cases, a part of the wiring board is exposed, and other portions are covered with a coating film, and the surface on the side of the coating film on the wiring board is exposed to the plasma. 5. The surface treatment method of the wiring board according to item 4 of the patent application is the substrate exposed on the surface of the partial metal wiring layer and the metal wiring layer after the wiring board is exposed to the plasma after removing the coating film. On the surface, the adhesive is placed. The method of surface treatment of a wiring board according to any one of the claims 2, 4, and 5, wherein the substrate is composed of a resin film. The method of the wiring board of any one of the first, second, fourth, and fifth items of the towel month patent 聋11 is to set the substrate to the first to the right of the processing chamber (with the electrode tip inside) The wiring board sprays the processing gas, and applies a voltage to the electrode tip to form a battery in the vicinity of the surface of the wiring board. For example, the surface treatment method of the wiring board of the patent application 帛7 is to attach the processing body I and the moisture gas 11 to the wiring board, thereby forming a plasma, and a manufacturing method of the electrical device is performed in the wiring. An electrical component is disposed on an adhesive placement surface of the board, and an electrical device is manufactured by connecting an electrical component and a wiring board through an adhesive; the wiring board has a base material and a metal wiring layer patterned in a predetermined planar shape and disposed on the substrate Providing a protective layer patterned in a planar shape substantially equal to the metal wiring layer on at least a part of the surface of the metal wiring layer, forming a laminated film by the protective layer and the metal wiring layer, and exposing the surface of the substrate between the laminated films After the laminated film forming side surface of the wiring board is exposed to the plasma, the protective layer is removed from the metal wiring layer, and then the surface of the metal wiring layer after the protection is removed and the surface of the substrate between the metal wiring layers are disposed. Adhesive. 10. A method of manufacturing an electrical device, wherein an electrical component is provided on an adhesive placement surface of a wiring board, and an electrical component is manufactured by connecting an electrical component and a wiring board through an adhesive; the wiring board has: a substrate, and is disposed on the substrate In the upper metal wiring layer, 21 1295313, a part of the coating film is placed on the surface of the metal wiring layer arrangement side, and the wiring board is covered by the "back gland, and the coating film of the wiring board is g-out, and other parts are After the partial metal is removed by the coating film and the surface is exposed to the plasma, the surface of the exposed substrate and the metal wiring layer are disposed on the surface of the exposed substrate. · 如次頁Secondary page 22 1295313 七、指定代表圖: (一) 本案指定代表圖為:第(1〇)〜(g))圖。 (二) 本代表圖之元件符號簡單說明: 1 0 · · ·酉己各良才反 11…基材 1 3…積層膜 14…金屬配線層 15···圖案化金屬配線層 1 8…保護層 19…黏著膜 28···電漿 八、本案若有化學式時,請揭示最能顯示發明特徵的化學式:22 1295313 VII. Designation of representative representatives: (1) The representative representative of the case is: (1〇)~(g)). (2) A brief description of the component symbols of this representative diagram: 1 0 · · · 酉 良 良 良 ...... ...... ...... ...... ...... ...... ...... ...... ...... ...... ...... ...... ...... ...... ...... ...... ...... ...... ...... ...... ...... ...... ...... ...... ...... ...... ...... ...... ...... ...... ...... ...... ...... ...... Layer 19... Adhesive film 28··· Plasma 8. If there is a chemical formula in this case, please disclose the chemical formula that best shows the characteristics of the invention:
TW093139272A 2003-12-22 2004-12-17 Surface treatment method of wiring board and manufacturing method for electric device TWI295313B (en)

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