200521204 九、發明說明： 【發明所屬之技術領域】 本發明係關於在配線板裝載電氣零件之技術，特％ β 關 於配線板之表面處理技術。 【先前技術】 以往，在軟性配線板等的配線板上透過黏著劑來袭栽半 導體元件前，為提昇配線板與黏著劑之親和性須進行表面 處理。 習知之表面處理所採用的方法，係將配線板配置於真咖 槽内，使該真空槽内形成真空環境氣氛，於此狀態下藉由 輝光放電來產生電漿，利用該電漿來進行表面處理。習知 之輝光放電法，不僅處理裝置之製造成本高，且因必須將 處理室内施以真空排氣，故作業時間變長。 使用電漿之表面處理方法，有一方法係在連通於大氣之 處理至内產生電漿，而使處理對象物曝露於該電漿中，依 據該方法，由於電漿產生時不須形成真空環境氣氛，故處 理裝置之製造成本低，且作業時間短（例如參照專利文獻i)。 ^而，右在處理室連通於大氣之狀態下產生電漿，則可 能造成金屬之腐餘。特別是，當金屬配線係由銅構成時， 大氣：的氮會和銅反應，而在金屬配線表面形成硝酸銅。 特別疋，右在金屬配線之狹窄部分構成的配線部形成硝酸 銅，則可能造成該配線部之斷線。 〔專利文獻1〕曰本特開平1〇-154598號公報 【發明内容】 200521204 本發明係為解決習知技術之問題點而創作者，其目的係 提供一不致使金屬配線腐蝕之配線板表面處理技術。 為了解決上述課題，本發明之配線板之表面處理方法， 該配線板具有：基材、及以既定平面形狀圖案化而配置於 基材上之金屬配線層，在金屬配線層之至少局部表面上， 配置以與金屬配線層大致相等的平面形狀圖案化之保護 層’藉保護層及金屬配線層來形成積層膜，且於積層膜之 間露出基材表面，使配線板之積層膜形成側表面曝露於電 漿後’將保護層從金屬配線層上除去。 本發明之表面處理方法，係在除去保護層後，在除去保 4層後之金屬配線層表面、及位於金屬配線層間之基材表 面上，配置黏著劑。 本發明之配線板之表面處理方法中，該金屬配線層之圖 案化’係在基材上配置圖案化前之金屬配線層後，使圖案 化後之保護層位於金屬配線層上，將露出於保護層間之金 屬配線層予以蝕刻除去。 本發明之配線板之表面處理方法，該配線板具有··基 材、及配置在基材上之金屬配線層，在金屬配線層配置側 的表面上設置被覆膜，除去該被覆膜的一部分，而使配線 板之局部露出、其他部分則以被覆膜覆蓋，將配線板之被 覆膜配置側的表面曝露於電漿。 本發明之配線板之表面處理方法，係在將配線板曝露於 電聚後’在除去被覆膜後之局部金屬配線層表面、及金屬 配線層間所露出之基材表面上，g己置黏著劑。 200521204 本發明之配線板之表面處理方法中，該基材係由樹脂膜 構成。 本發明之配線板之表面處理方法，係將基材設置於處理 室（内部具有電極嘴）之第一、第二開口間，從電極嘴對配線 板噴附處理氣體，對電極嘴施加電壓，以在配線板的表面 附近形成電漿。 本發明之配線板之表面處理方法，係將處理氣體與水分 氣體一起喷附於配線板，藉此形成電聚。 本發明之電氣裝置之製造方法，係在配線板之黏著劑配 置面设置電氣零件，透過黏著劑來連接電氣零件與配線板 而製造電氣裝置； 該配線板具有：基材、及以既定平面形狀圖案化而配置 於基材上之金屬配線層，在金屬配線層之至少局部表面 上，配置以與金屬配線層大致相等的平面形狀圖案化之保 護層，藉保護層及金屬配線層來形成積層膜，且於積層膜 之間露出基材表面，使配線板之積層膜形成側表面曝露於 電漿後，將保護層從金屬配線層上除去後，在除去保護層 後之金屬配線層表面、及位於金屬配線層間之基材表面 上，配置黏著劑。 本毛月之電氣裝置之製造方法，係在配線板之黏著劑配 置面没置電氣零件’透過黏著劑來連接電氣零件與配線板 而製造電氣裝置； 該配線板具有：基材、及配置在基材上之金屬配線層， 在金屬配線層配置侧的表面上設置被覆膜，除去該被覆膜 200521204 的一部分，而使配線板之局部露出、其他部分則以被覆膜 覆蓋’將配線板之被覆膜配置側的表面曝露於電漿後，在 除去被覆膜後之局部金屬配線層表面、及金屬配線層間所 露出之基材表面上，配置黏著劑。 依據上述構成，在金屬配線層的表面形成保護層時，當 配線板表面曝露於電漿時金屬配線層被保護層所保護，故 金屬配線層不致因電漿而產生劣化。 依據本發明之表面處理方法，在進行電漿處理時並不須 在所有金屬配線層上均形成保護層。例如，不須塗布黏著 劑而未進行電漿處理的部分，則使金屬配線層露出亦可。 一般而言，若基材表面上有油分等污染物質之附著，則 基材與黏著劑之黏著性會變差。依據本發明之表面處理方 法，在配線板製程中就算在基材表面有污染物質之附著， 精由使積層膜間所路出的基材表面曝露於電漿，即可將污 染物質分解除去，故電漿處理後之配線板與黏著劑之黏著 性變高。 依據本發明之表面處理方法’當樹脂膜表面實施電聚處 理時，由於金屬配線層被樹脂膜所保護，故金屬配線層不 致腐蝕。又，金屬配線層中，僅使連接用之寬廣部從被覆 膜露出、而使金屬配線層之狹窄部用被覆膜覆蓋，只要以 此狀態進行電漿處理，由於狹窄部不致被電漿腐餘，故狹 窄部構成之金屬配線層配線部不會產生斷線。因此，依據 本發明，由於能以不致使金屬配線層劣化的方式進行表面 處理，只要在表面處理後的配線板連接電氣零件，即可製 200521204 得高連接可靠性之電氣裝置。 【實施方式】 以下參照圖式說明本發明之實施形態。圖i⑷的符號 "代表長形樹脂膜構成的基材，在基材"表面形成金屬薄 膜構成的金屬配線層i 4。 為了製作配線板，係在金屬配線層14的表面塗布含感 光性樹脂之光阻心布液，經加熱㈣成樹耗護層後， 使用光罩進行曝光、_，以將保護㈣案化成既定形狀。 由於基材11比光罩長，一次曝光可曝光的區域有限， 故須反覆進行使用光罩之曝光、顯影，使保護層全面均曝 光顯影後，在金屬配線層14上之各既定區域形成具有相同 圖案的保護層。 )圖1(b)之符號丨8代表以既定平面形狀圖案化而成之保 4層’從@案化之保護層18間露出金屬配線層Μ。 其次，藉由蝕刻製程，在殘留保護層18下，將保護層 u間所露出之金屬配線層14#刻至基材u露出為止，如 此將金屬配線層14圖案化成平面形狀與保護層18相同。 圖1(0的符號15代表圖案化的金屬配線層，由該圖案 化的金屬配線層15與基材Π來構成配線板10。金屬配線 層15上殘留有保護層18，由該圖案化的金屬配線層μ、 與殘留於金屬配線層15上的保護層18來構成積層膜Η， 從該積層膜13間露出基材11。 圖3之符號丨代表用來對配線板1〇實施電漿處理之處 凌置處理裝置1具有處理室3 1。在處理室3 1的侧壁形 200521204 成第一、第二開口 32、33。經由第一、第二開口 Μ、Μ， 使處理室3 1的内部空間連通於處理室3丨外部之大氣。 線板10即成為橫渡第一、第二開口 離〇 在處理室_配置電極嘴36及下部_ 37風配線 板H)呈捲筒狀裝設於處理裝置i ’將配線板ι〇的外周端部 (以積層膜u形成面朝向電極嘴36的狀態）從配線板捲筒拉 出後通過第-開口 32、通過電極嘴36與下部電極37間、 再通過第二開π 33而在處理室31外部加以捲取，如此配 32、33間而配置的狀 C至電極嘴36 ’添加氣體高壓容器之添加氣體係直接送 一在處理室31夕卜部配置有處理氣體高壓容器4卜添加氣 體高壓容器42、鼓泡n 45，處理氣體高壓容器41之一部 分處理氣體係、直接送至電極冑36，其他部分則經由鼓泡器 至電極嘴36,亦即對電極嘴3“共給的氣體包含:處理氣體、 添加軋體、及藉鼓泡器45而添加至處理氣體之水分氣體。 供給至電極嘴36之處理氣體、添加氣體與水分氣體三 此。氣體，係從電極嘴36之噴出口朝向配線板10喷 4於配線板1 〇與電極嘴36間之大氣則被該混合氣體 所擠出。 從配線板1G與電極嘴36間擠出的大氣，係與處理室 :1内部殘留的大氣-起順著混合氣體的流勢向處理室31外 部擠出，故處理室31内部的大氣濃度變低。 又藉由喷出的混合氣體流可防止大氣侵入配線板1 〇 -電極嘴36間的空間，故配線才反1〇與電極嘴36間的空間 200521204 之大氣濃度非常低。 於此狀態，捲動捲筒而使配線板1 〇沿長邊方向行進。 第一、第二開口 32、33於配線板10行進時並未封閉，由 於處理室3 1内部與外部的大氣連通，伴隨的配線板10的 行進雖會將大氣捲入處理室3 1内，但在配線板1 〇行進時 仍會從電極嘴36噴出混合氣體，故侵入處理室3 1内部的 大氣會被排至處理室3 1外部。 隨著配線板1 〇之行進，當配線板1 〇之待處理區域位於 電極嘴36與下部電極37間時，使配線板10呈靜止。 在配線板10呈靜止的狀態下，邊從電極嘴36喷出混合 氣體、邊在電極嘴36與下部電極37間施加電壓，藉此在 配線板10與電極嘴36之間產生混合氣體之電漿。 圖1(d)之符號28代表混合氣體的電漿，如上述般，由 於從積層膜13間露出基材11的表面，附著於基材Η表面 之油分等污染物質將被電漿分解，且構成基材11之樹脂會 和電漿反應，而在基材11表面形成官能基（電漿處理）。 於電漿處理時，由於金屬配線層15表面被保護層i 8 所覆蓋，故金屬配線層15的表面受保護層18之保護。因 此，當金屬配線層15由銅構成時，就算處理室3丨内部有 大氣入侵，也不會因電漿而在金屬配線層15表面形成硝酸 銅（與大氣成分之反應物），故不致造成金屬配線層之腐 餘。 當配線板10進行既定時間的電漿處理後，停止對電極 嘴36之施加電壓，結束電漿處理。然後，使配線板丨〇行 11 200521204 進，當配線板ίο之未處理區域到達電極嘴36與下部電極 37間牯，使配線板1〇呈靜止，進行上述電漿處理。如此般， 藉由反覆進行電漿處理，可在長形配線板之必要區域均進 行電漿處理。 又，在下部電極37上配置固體介電膜38， -將下部電極37之電極嘴36對向面全面覆蓋，故在= 處理時下部電極37與電極嘴36間不致產生電孤放電，因 此不會因電孤放電而弄傷配線板i 〇。 保濩層18在電漿處理製程時曝露於電漿中，故其與金 _ 屬配線層15之黏著力變差，藉由後述的除去方法能輕易地 從金屬配線層15表面除去。圖1(e)顯示保護層18除去後的 狀悲，金屬配線層15的表面、與位於金屬配線層15間之 基材11表面係呈露出。 保護層1 8之除去方法，可採用以往泛用之各種方法， 例如用鹼性蝕刻液之濕蝕刻法等，但較佳的方法，係對位 於金屬配線層15間之基材n表面之電漿處理面的影響較 少者° · 具體的方法，係準備一膠帶（其與保護層18間的黏著力 大於保護層18與金屬配線層15間的黏著力），將該膠帶貼 合於保護層1 8表面後再剝離，使保護層1 8轉印於膠帶而 伙金屬配線層1 5剝離。 另 方法，係取代驗系触刻液等化學活性較高的餘刻 液，而使用水系蝕刻液等化學活性較低的蝕刻液，使其接 觸保護層1 8而將保護層1 8予以除去。 12 200521204 圖1(f)之符號19代表形成有膜狀黏著劑之黏著膜，如 圖1(g)所示般將該黏著膜19載置於配線板1〇之金屬配線 層1 5配置側。 其次，說明在配線板10連接電氣零件之製程。圖2(勾 之符號20代表電氣零件之半導體元件。該半導體元件如 具有元件本體2卜及配置於元件本體21 _面之突塊狀連接 端子25，將半導體元件2〇之連接端子25配置面朝向配線 板1〇上之黏著膜i9而配置，以連接端子乃面對金屬配線 層15既定位置的方式進行定位後，將半導體元件2〇裝載 於黏著膜19上。 依此狀態，邊將半導體元件2〇緊壓邊加熱，則黏著膜 19文熱軟化，軟化後的黏著膜19被壓開，而使連接端子 25的前端抵接於金屬配線層15表面，並使軟化後的黏著臈 19密合於金屬配線層15表面、及位於金屬配線層間的 基材11表面。 構成黏著膜19之黏著劑係含有環氧樹脂般之熱固性樹 脂，當連接端子25抵接於金屬配線層15的狀態下再持續 加熱’《著_ 19會以密合狀態（密合於金屬配線層15表 面、及位於金屬配線層15間的基材u表面）進行硬化。 位於金屬配線層15間之基材u表面，經由上述電裝處 理不僅可除去污染物質’同時可在表面形成官能基。例如， 基材Π為聚醯亞胺樹脂構成的情形，當基材n曝露於混 合氣體之電漿時，在基材11表面聚酿亞胺樹脂會和混合氣 體中的水分氣體反應，而形❹基（领）、«_)、 13 200521204 羰基（〇 = CH)等的官能基。 由於這些官能基和構成黏著膜1 9之黏著劑具有良好的 親和性，故基材11與黏著膜19之黏著性高，結果可使半 導體元件20強固地貼合於配線板！ 〇。 圖2(b)之符號2代表在配線板1 〇上貼合有半導體元件 20之電氣裝置，該電氣裝置2之配線板1〇不易剝離，又如 上所述般配線板1〇之金屬配線層15於電漿處理時不會被 腐钱，因此其電氣可靠性良好。 以上的說明所針對的情形，係在圖案化前的金屬配線層 14上配置保護f 18,進行該金屬配線層14的圖案化以形 成積層膜13;但本發明並不限於此，例如可將圖案化後的 金屬配線層配置於基材u上後’於該金屬配線層上配置圖 案化後之保護層18(與金屬配線層之形成大致相同)而形成 積層膜13後，再進行上述電漿處理。 的情形，只要在電漿 ’例如能由陶瓷或金 又，保護層1 8並不限於樹脂構成 處理後能從金屬配線層上除去者皆可 屬等各種材料來構成保護層1 8。 以上所說明的情形’雖是針對以保護層18被覆金屬配 ，層二的狀態來進行電漿處理，但本發明並不限於此。圖 之符5虎5 0代表本發明夕1 他表面處理方法所使用的配線 扳。該配線板50具備•·谢胪描接上、 備树知膜構成的基材5卜及配置於基 材51表面之金屬配線層 而沒日μ人 > 基材5 1之金屬配線層55配置 面係貼合有樹脂構成的被覆膜52。 金屬配線層5 5短< _安* "τ* 、、、案化而形成有狹窄部5 6與寬廣部 200521204 57，狹窄部56的一端連接於寬廣部57。被覆膜52貼合於 配線板50之金屬配線層55配置面後，以使各寬廣部57之 至少局部露出的方式進行切除而形成開口 59(半切除），在 開口 59内，寬廣部57之表面、與位於寬廣部57周圍之基 材5 1表面係呈露出，但金屬配線層55之狹窄部56則形成 以被覆膜52覆蓋的狀態。200521204 IX. Description of the invention: [Technical field to which the invention belongs] The present invention relates to a technology for loading electrical parts on a wiring board, and particularly β is related to the surface treatment technology of the wiring board. [Prior art] In the past, before the semi-conductive elements were attacked by an adhesive on a wiring board such as a flexible wiring board, a surface treatment was required to improve the affinity between the wiring board and the adhesive. The conventional method for surface treatment is to arrange the wiring board in a real coffee tank, so that a vacuum environment atmosphere is formed in the vacuum tank, and in this state, a plasma is generated by glow discharge, and the plasma is used to perform the surface deal with. The conventional glow discharge method not only has a high manufacturing cost of the processing device, but also requires a vacuum exhaust in the processing chamber, so the operation time becomes longer. The surface treatment method using plasma, one method is to generate plasma in the interior of the treatment connected to the atmosphere, and expose the object to be treated in the plasma. According to this method, it is not necessary to form a vacuum atmosphere when the plasma is generated. Therefore, the manufacturing cost of the processing device is low and the operation time is short (for example, refer to Patent Document i). ^ While plasma is generated when the processing chamber is connected to the atmosphere, metal corrosion may be caused. In particular, when the metal wiring system is composed of copper, nitrogen in the atmosphere reacts with copper, and copper nitrate is formed on the surface of the metal wiring. In particular, if copper nitrate is formed on a wiring portion formed on a narrow portion of a metal wiring, the wiring portion may be disconnected. [Patent Document 1] Japanese Patent Application Laid-Open No. 10-154598 [Summary of the Invention] 200521204 The present invention was created to solve the problems of the conventional technology, and its purpose is to provide a surface treatment of a wiring board that does not cause corrosion of metal wiring. technology. In order to solve the above-mentioned problem, a surface treatment method of a wiring board of the present invention includes a base material and a metal wiring layer patterned in a predetermined planar shape and arranged on the base material, on at least a part of a surface of the metal wiring layer. A protective layer patterned in a planar shape approximately equal to the metal wiring layer is configured to form a laminated film by the protective layer and the metal wiring layer, and the substrate surface is exposed between the laminated films, so that the laminated film of the wiring board forms a side surface After exposure to the plasma, the protective layer is removed from the metal wiring layer. In the surface treatment method of the present invention, after the protective layer is removed, an adhesive is disposed on the surface of the metal wiring layer after removing the protective layer and on the surface of the substrate between the metal wiring layers. In the surface treatment method of the wiring board of the present invention, the patterning of the metal wiring layer is after the metal wiring layer before the patterning is arranged on the substrate, and the protective layer after the patterning is positioned on the metal wiring layer and will be exposed on The metal wiring layer between the protective layers is etched away. A surface treatment method of a wiring board according to the present invention, the wiring board has a base material and a metal wiring layer arranged on the base material, and a covering film is provided on a surface on the side where the metal wiring layer is arranged, and the covering film is removed. Part of the wiring board is partially exposed, and the other part is covered with a coating film, and the surface on the side where the coating film is arranged of the wiring board is exposed to the plasma. The surface treatment method of the wiring board of the present invention is that after the wiring board is exposed to the electropolymerization, the surface of the local metal wiring layer after removing the coating film, and the surface of the substrate exposed between the metal wiring layers, g has been adhered. Agent. 200521204 In the surface treatment method of a wiring board of the present invention, the substrate is made of a resin film. The surface treatment method of the wiring board of the present invention is to set the substrate between the first and second openings of the processing chamber (with electrode tips inside), spray the processing gas from the electrode tips to the wiring board, and apply a voltage to the electrode tips. To form a plasma near the surface of the wiring board. The surface treatment method of the wiring board of the present invention is to spray a processing gas and a moisture gas on the wiring board together, thereby forming an electropolymer. The manufacturing method of the electrical device of the present invention is to install electrical components on the adhesive placement surface of a wiring board, and connect the electrical components and the wiring board through the adhesive to manufacture the electrical device. The wiring board has a base material and a predetermined planar shape. A metal wiring layer patterned and disposed on a substrate. A protective layer patterned in a plane shape approximately equal to that of the metal wiring layer is arranged on at least a part of the surface of the metal wiring layer. The protective layer and the metal wiring layer are used to form a build-up layer. Film, and the substrate surface is exposed between the laminated films, the laminated film forming side surface of the wiring board is exposed to the plasma, the protective layer is removed from the metal wiring layer, the surface of the metal wiring layer after the protective layer is removed, And on the surface of the substrate located between the metal wiring layers, an adhesive is arranged. The manufacturing method of the electrical device of this month is to manufacture electrical devices without electrical components on the adhesive placement surface of the wiring board. 'The electrical components are connected to the wiring board through the adhesive; the wiring board has: a substrate, and The metal wiring layer on the substrate is provided with a coating film on the surface on the side where the metal wiring layer is arranged, and a part of the coating film 200521204 is removed to expose a part of the wiring board and the other parts are covered with a coating film. After the surface on the coating film arrangement side of the board is exposed to the plasma, an adhesive is arranged on the surface of the local metal wiring layer after the coating film is removed and the surface of the substrate exposed between the metal wiring layers. According to the above configuration, when the protective layer is formed on the surface of the metal wiring layer, the metal wiring layer is protected by the protective layer when the surface of the wiring board is exposed to the plasma, so the metal wiring layer is not deteriorated by the plasma. According to the surface treatment method of the present invention, it is not necessary to form a protective layer on all metal wiring layers when performing plasma treatment. For example, the portion where the adhesive is not applied and the plasma treatment is not performed may expose the metal wiring layer. In general, if the surface of the substrate is contaminated with oil and other pollutants, the adhesion between the substrate and the adhesive will be deteriorated. According to the surface treatment method of the present invention, even during the manufacturing process of the wiring board, even if there is adhesion of pollutants on the surface of the substrate, the surface of the substrate exiting between the laminated films is exposed to the plasma, and the pollutants can be decomposed and removed. Therefore, the adhesion between the wiring board and the adhesive after the plasma treatment becomes high. According to the surface treatment method of the present invention, when the surface of the resin film is subjected to the electropolymerization treatment, the metal wiring layer is not corroded because the metal wiring layer is protected by the resin film. In the metal wiring layer, only the wide portion for connection is exposed from the coating film, and the narrow portion of the metal wiring layer is covered with the coating film. As long as the plasma treatment is performed in this state, the narrow portion is not plasmad. Corrosion, so the metal wiring layer wiring portion composed of the narrow portion will not be disconnected. Therefore, according to the present invention, since the surface treatment can be performed without deteriorating the metal wiring layer, as long as electrical components are connected to the wiring board after the surface treatment, an electrical device with high connection reliability can be manufactured. [Embodiment] An embodiment of the present invention will be described below with reference to the drawings. The symbol " in Fig. I " represents a substrate made of a long resin film, and a metal wiring layer i4 made of a thin metal film is formed on the surface of the substrate. In order to make a wiring board, a photoresist core cloth liquid containing a photosensitive resin is coated on the surface of the metal wiring layer 14 and heated to form a tree protective layer, and then exposed with a photomask to form a protective pattern into a predetermined shape. . Since the substrate 11 is longer than the photomask and the area that can be exposed in one exposure is limited, it is necessary to repeatedly perform exposure and development using the photomask, so that the protective layer is fully exposed and developed, and then formed in each predetermined area on the metal wiring layer 14 Protective layer of the same pattern. ) The symbol 丨 8 in FIG. 1 (b) represents a protective layer 4 patterned in a predetermined plane shape, and the metal wiring layer M is exposed from between the protective layers 18 of @ 案 化. Secondly, the metal wiring layer 14 # exposed between the protective layers u is etched under the remaining protective layer 18 through the etching process until the substrate u is exposed. Thus, the metal wiring layer 14 is patterned into the same planar shape as the protective layer 18 . The reference numeral 15 in FIG. 1 (0) represents a patterned metal wiring layer. The patterned metal wiring layer 15 and the substrate Π constitute a wiring board 10. A protective layer 18 remains on the metal wiring layer 15, and the patterned The metal wiring layer μ and the protective layer 18 remaining on the metal wiring layer 15 constitute a laminated film Η, and the substrate 11 is exposed between the laminated films 13. The symbol 丨 in FIG. 3 represents a plasma for the wiring board 10 The processing unit 1 has a processing chamber 31. The side wall of the processing chamber 31 is 200521204 into first and second openings 32 and 33. Through the first and second openings M and M, the processing chamber 3 is formed. The internal space of 1 communicates with the outside atmosphere of the processing chamber 3. The wire plate 10 becomes across the first and second openings. The processing chamber _ is equipped with electrode nozzles 36 and the bottom _ 37 wind wiring board. It is provided in the processing device i 'and pulls the outer peripheral end portion of the wiring board ι (in a state where the formation surface of the multilayer film u faces the electrode nozzle 36) from the wiring board roll, passes through the first opening 32, through the electrode nozzle 36, and the lower electrode. 37, and then coiled outside the processing chamber 31 through the second opening π 33, so The configuration C between 32 and 33 to the electrode tip 36 'Add gas high pressure container The added gas system is sent directly to the processing chamber 31, where the processing gas high pressure container 4 is added, the added gas high pressure container 42, bubbling n 45, Part of the processing gas high-pressure container 41 is the processing gas system, which is sent directly to the electrode 36, and the other part is passed to the electrode nozzle 36 through a bubbler, that is, the gas supplied to the electrode nozzle 3 includes: processing gas, adding rolling body, And the moisture gas added to the processing gas by the bubbler 45. The processing gas, the added gas, and the moisture gas supplied to the electrode nozzle 36 are three. The gas is sprayed from the nozzle outlet of the electrode nozzle 36 toward the wiring board 10 to the wiring. The atmosphere between the plate 10 and the electrode nozzle 36 is extruded by the mixed gas. The atmosphere extruded from the wiring board 1G and the electrode nozzle 36 is related to the processing chamber: 1 The remaining air in the interior-from the gas mixture The flow potential is extruded to the outside of the processing chamber 31, so the atmospheric concentration inside the processing chamber 31 becomes low. Also, the discharged mixed gas flow can prevent the atmosphere from entering the space between the wiring board 10 and the electrode nozzle 36, so the wiring is reversed. 1〇 与 electrode The air density of the 36 spaces 200521204 is very low. In this state, the reel is rolled to make the wiring board 10 travel along the long side. The first and second openings 32 and 33 are not closed when the wiring board 10 travels. Since the inside of the processing chamber 31 communicates with the outside atmosphere, although the accompanying wiring board 10 travels, the atmosphere is drawn into the processing chamber 31, but the mixed gas is still ejected from the electrode nozzle 36 when the wiring board 10 is traveling. The atmosphere that has penetrated into the processing chamber 31 is discharged to the outside of the processing chamber 31. As the wiring board 10 travels, when the area to be processed of the wiring board 10 is located between the electrode nozzle 36 and the lower electrode 37, the wiring board is made 10 is still. When the wiring board 10 is stationary, a mixed gas is sprayed from the electrode nozzle 36 and a voltage is applied between the electrode nozzle 36 and the lower electrode 37, thereby generating a mixed gas electricity between the wiring board 10 and the electrode nozzle 36. Pulp. The symbol 28 in FIG. 1 (d) represents the plasma of the mixed gas. As described above, since the surface of the substrate 11 is exposed from the laminated film 13, pollutants such as oil content attached to the surface of the substrate Η will be decomposed by the plasma, and The resin constituting the substrate 11 reacts with the plasma to form functional groups on the surface of the substrate 11 (plasma treatment). During the plasma treatment, since the surface of the metal wiring layer 15 is covered by the protective layer i 8, the surface of the metal wiring layer 15 is protected by the protective layer 18. Therefore, when the metal wiring layer 15 is made of copper, even if there is atmospheric invasion in the processing chamber 3 丨, copper nitrate (a reactant with atmospheric components) will not be formed on the surface of the metal wiring layer 15 due to the plasma, so it will not cause Corrosion of metal wiring layer. After the wiring board 10 is subjected to the plasma treatment for a predetermined time, the voltage application to the electrode tip 36 is stopped, and the plasma treatment is terminated. Then, make the wiring board line 11 200521204 enter. When the untreated area of the wiring board reaches the gap between the electrode nozzle 36 and the lower electrode 37, the wiring board 10 is made to stand still, and the above plasma processing is performed. In this way, by performing the plasma treatment repeatedly, the plasma treatment can be performed on the necessary areas of the elongated wiring board. In addition, a solid dielectric film 38 is arranged on the lower electrode 37, and-the electrode nozzle 36 of the lower electrode 37 is completely covered by the opposing surface, so that during the processing, an electrically isolated discharge does not occur between the lower electrode 37 and the electrode nozzle 36, so It will damage the wiring board i 〇 due to electrical discharge. The preservative layer 18 is exposed to the plasma during the plasma processing process, so its adhesion to the metal wiring layer 15 becomes poor, and it can be easily removed from the surface of the metal wiring layer 15 by a removal method described later. Fig. 1 (e) shows the state after the protective layer 18 is removed. The surface of the metal wiring layer 15 and the surface of the substrate 11 located between the metal wiring layer 15 are exposed. The method for removing the protective layer 18 can be conventionally used in various methods, such as a wet etching method using an alkaline etchant, but the preferred method is to apply electricity to the surface of the substrate n between the metal wiring layers 15 Those with less influence on the paste-treated surface ° · A specific method is to prepare an adhesive tape (the adhesive force between the protective layer 18 and the protective layer 18 is greater than the adhesive force between the protective layer 18 and the metal wiring layer 15), and attach the tape to the protective layer The surface of the layer 18 is peeled off, the protective layer 18 is transferred to the tape, and the metal wiring layer 15 is peeled. Another method is to replace the etching solution with a higher chemical activity such as a test etching solution, and use an etching solution with a lower chemical activity such as a water-based etching solution to contact the protective layer 18 and remove the protective layer 18. 12 200521204 Symbol 19 in Fig. 1 (f) represents an adhesive film formed with a film-like adhesive. As shown in Fig. 1 (g), this adhesive film 19 is placed on the metal wiring layer 15 of the wiring board 10, and is arranged on the side. . Next, a process for connecting electrical components to the wiring board 10 will be described. Figure 2 (Hook symbol 20 represents a semiconductor component of an electrical component. For example, the semiconductor component has a component body 2 and a bump-shaped connection terminal 25 arranged on the surface of the component body 21, and the connection terminal 25 of the semiconductor component 20 is arranged on the surface. It is arranged toward the adhesive film i9 on the wiring board 10, and after positioning the connection terminals so as to face the predetermined position of the metal wiring layer 15, the semiconductor element 20 is mounted on the adhesive film 19. In this state, the semiconductor When the component 20 is pressed and heated, the adhesive film 19 is thermally softened, and the softened adhesive film 19 is pressed apart, so that the front end of the connection terminal 25 abuts on the surface of the metal wiring layer 15 and the softened adhesive 臈 19 Adhesively adheres to the surface of the metal wiring layer 15 and the surface of the base material 11 between the metal wiring layers. The adhesive constituting the adhesive film 19 contains a thermosetting resin such as epoxy resin, and the connection terminal 25 is in a state of abutting against the metal wiring layer 15 Continue to heat the next "" _ 19 will be hardened in a close state (closely adhered to the surface of the metal wiring layer 15 and the surface of the substrate u between the metal wiring layers 15). It is located between the metal wiring layers 15 The surface of the substrate u can not only remove contaminated substances, but also form functional groups on the surface through the above-mentioned electrical assembly treatment. For example, when the substrate Π is made of polyimide resin, when the substrate n is exposed to the electricity of the mixed gas During the pulping process, the polyimide resin polymerized on the surface of the substrate 11 will react with the moisture gas in the mixed gas, and form functional groups such as hydrazone (collar), «_), 13 200521204 carbonyl group (0 = CH), and the like. Since these functional groups have good affinity with the adhesive constituting the adhesive film 19, the adhesiveness between the substrate 11 and the adhesive film 19 is high, and as a result, the semiconductor element 20 can be firmly adhered to the wiring board! 〇. The symbol 2 in FIG. 2 (b) represents an electrical device in which the semiconductor element 20 is bonded to the wiring board 10. The wiring board 10 of the electric device 2 is not easy to peel off, and the metal wiring layer of the wiring board 10 is as described above. 15 will not be corrupted during plasma processing, so its electrical reliability is good. The above description is directed to the case where a protective f 18 is disposed on the metal wiring layer 14 before patterning, and the metal wiring layer 14 is patterned to form a laminated film 13; however, the present invention is not limited thereto. After the patterned metal wiring layer is disposed on the substrate u, a patterned protective layer 18 (approximately the same as the formation of the metal wiring layer) is disposed on the metal wiring layer to form a laminated film 13, and then the above electrical process is performed. Pulp processing. In some cases, the protective layer 18 may be made of various materials, such as ceramics or gold, and the protective layer 18 is not limited to resin. The protective layer 18 can be removed from the metal wiring layer after the treatment. In the above-mentioned case, the plasma treatment is performed in the state where the protective layer 18 is coated with the metal compound and the second layer, but the present invention is not limited to this. The symbol 5 tiger 5 0 in the figure represents the wiring board used in the surface treatment method of the present invention. This wiring board 50 is provided with a base material 5 made up of a sheet of film and a film, and a metal wiring layer disposed on the surface of the base material 51. The metal wiring layer 55 of the base material 51 is used. The arrangement surface is bonded with a coating film 52 made of resin. The metal wiring layer 55 is short < _Ann * " τ *, and is formed into a narrow part 56 and a wide part 200521204 57. One end of the narrow part 56 is connected to the wide part 57. After the covering film 52 is adhered to the metal wiring layer 55 arrangement surface of the wiring board 50, the wide portions 57 are cut away so that at least a portion of them is exposed to form an opening 59 (half cut). Within the opening 59, the wide portion 57 The surface and the surface of the substrate 51 located around the wide portion 57 are exposed, but the narrow portion 56 of the metal wiring layer 55 is formed in a state covered with the coating film 52.
為了對配線板50進行表面處理，係將配線板5〇跨設於 上述處理裝置1之第一、第二開口 32、33間，以處理室Η 内部連通大氣氣氛的狀態，從電極嘴36朝配線板5〇喷出 處理氣體、水分氣體及添加氣體所組成的混合氣體，而產 生混合氣體的電漿，以從露出於開口 59底面之基材5 1表 面除去β染物質，並使構成基材5丨之樹脂與電漿反應，而 在基材5 1表面形成官能基。In order to perform surface treatment on the wiring board 50, the wiring board 50 is placed between the first and second openings 32 and 33 of the processing device 1 above, and the atmosphere in the processing chamber 连通 is communicated from the electrode nozzle 36 toward The wiring board 50 sprays a mixed gas composed of a processing gas, a moisture gas, and an additive gas to generate a plasma of the mixed gas, so as to remove the β-dye substance from the surface of the substrate 51 exposed on the bottom surface of the opening 59, and make the base The resin of the material 51 reacts with the plasma to form a functional group on the surface of the substrate 51.
這時，金屬配線層55之狹窄部56被被覆膜52所覆蓋。 =此，當金屬配線| 55由銅構成冑，就算有大氣侵入處理 室31内部，仍不致在狹窄部56表面形成硝酸銅等與大氣 成分之反應物，而不致發生狹窄部56之斷線。 電聚處理後，只要在配線板1G之開口 59形成部分配 黏著劑’如上述般，即可將半導體元件2()等的電氣零件』 接於配線板5〇。這時，開口 59形成部分之基材51，藉 ，理不僅可除去污染物質，同時會在基材”表面形 S能基，故黏著劑與基材51之黏著性良好，而能將半導彳 兀件2〇強固地固定於配線板2〇。又，如上述般由於狹窄 6不致因電Μ理產生斷線’故能獲得連接可靠性良好 15 200521204 電氣裝置。 乂上”兒明的情形，雖是針對在配線板50貼合被覆膜52 後’除去被覆膜5 ^ \ 、2的一部分而形成開口 59 ;但本發明並不 限於此，也能拿I ^ 先於被覆膜形成開口，以寬廣部露出於該 開口底面的方式，將該被覆膜貼合於配線板之金屬配線層 配置面。 。乂上所說明的情形，雖是針對固定介電膜3 8僅設於下 部電極37側的情形，但例如固體介電膜也能設在電極嘴36 :，或設在下部電極37側與電極嘴36側雙方。關於處理 虱體’可使用氫氣、氦氣、氙氣等各種的稀有氣體。 “例如，右使用氧作為添加氣體，則能提昇電漿形成時的 =電安定性。添加氣體並不限於氧，只要電極嘴施加電壓 訏不會聚合但能在基材u表面產生化學反應之氣體即可， 例如可採用氫氣、氮氣等各種反應性氣體。 又，不使用添加氣體而從電極嘴36噴出處理氣體與水 分氣體所組成之混合氣體來進行電漿處理亦可。At this time, the narrow portion 56 of the metal wiring layer 55 is covered with the coating film 52. = Here, when the metal wiring | 55 is made of copper, even if the atmosphere penetrates the inside of the processing chamber 31, the reactants such as copper nitrate and the atmospheric components are not formed on the surface of the narrow portion 56, and the disconnection of the narrow portion 56 does not occur. After the electropolymerization process, as long as the adhesive agent 'is distributed to the opening 59 forming portion of the wiring board 1G as described above, the electrical components such as the semiconductor element 2 () can be connected to the wiring board 50. At this time, the part of the base material 51 formed by the opening 59 can not only remove pollutants, but also form an S energy group on the surface of the base material. Therefore, the adhesiveness between the adhesive and the base material 51 is good, and the semiconducting material can be removed. The element 20 is firmly fixed to the wiring board 20. In addition, as described above, because the narrow 6 does not cause a disconnection due to electrical mechanics, the connection reliability is good. 15 200521204 Electrical device. Although the openings 59 are formed to 'remove a part of the coating films 5 ^ \ and 2 after the coating film 52 is bonded to the wiring board 50, the present invention is not limited to this, and I ^ can be formed before the coating film. The opening is bonded to the metal wiring layer arrangement surface of the wiring board so that the wide portion is exposed on the bottom surface of the opening. . Although the case described above is for the case where the fixed dielectric film 38 is provided only on the lower electrode 37 side, for example, a solid dielectric film can also be provided on the electrode tip 36: or on the lower electrode 37 side and the electrode Mouth 36 sides. As for the treatment of the lice, various rare gases such as hydrogen, helium, and xenon can be used. "For example, using oxygen as an added gas on the right can increase the electrical stability when plasma is formed. The added gas is not limited to oxygen, as long as the electrode tip applies a voltage, it will not polymerize but can produce a chemical reaction on the surface of the substrate u. Gas may be used, and for example, various reactive gases such as hydrogen and nitrogen may be used. Alternatively, a mixed gas composed of a processing gas and a moisture gas may be ejected from the electrode nozzle 36 without using an additive gas to perform plasma processing.
以上所說明的情形，係針對使用黏著膜19(將黏著劑成 形為膜狀而成）來製造電氣裝置2的情形，但本發明並不限 於此，可將糊狀黏著劑塗布於配線板1〇與半導體元件2Q 之任方或雙方，透過該黏著劑來貼合配線板1 〇與半導體 元件20而製造出電氣裝置。 構成基材11之樹脂並不限於聚醯亞胺樹脂，也能以聚 醋樹脂等各種樹脂來構成基材Π。基材U並不限於樹脂 膜，也能採用玻璃基板等各種材質者。當基材π由可撓性 16 200521204 樹脂膜構成、且金屬配線層之膜厚薄到不致影響基材1 ^的 可撓性時，即構成配線板10整體具有可撓性之所謂軟性配 線板。 貼合於配線板10之電氣零件並不限於半導體元件2〇， 例如也能貼合其他的軟性配線板、硬性基板等各種電氣零 件來構成電氣裝置2。 7 本發明之電氣裝置製造方法所使用之黏著劑並沒有特 別的限定，當考慮到電氣裝置2之連接可靠性，則以採用 黏著劑中分散有導電性粒子之異向導電性黏著劑為佳。 黏著劑所使用之熱固性樹脂並不限於環氧樹脂，也能採 用三聚氰胺樹脂、酚醛樹脂等等。黏著劑中也能添加埶塑 性樹脂等熱固性樹脂以外的樹脂、老化防止劑、著色劑等 的添加劑。關於黏著劑，除含有熱固性樹脂者以外，也能 使用含有丙烯酸酯樹脂等的光聚合性樹脂者。 以上所說明的情形，雖是針對金屬配線層15由銅構成 者，但本發明並不限於此，金屬配線層15也能用鋁、合金 等各種導電性材料來構成。 金屬配線層，例如由基材u表面上藉由蒸鍍法等成臈 方法形成之金屬薄膜所構成。又，也能以金屬羯構成金屬 配線層’在該金屬箱表面塗布樹脂組成物並予加以燒成， 而構成樹脂膜製的基材1 1。 以上所說明的情形，係針對在配線板10行進時也會從 電極嘴36喷出混合氣體，但本發明並不限於此，為了節省 混合氣體的消耗量而降低成本，也能在配線板H)行進時暫 17 200521204 停混合氣體的噴出，而在配線板丨0停止行進時再開始進乂 混合氣體的喷出。 ° 订 又’本發明所用的處理室3 1可連接於排氣系，邊藉节 排氣系從處理室3 1内部進行排氣邊喷出混合氣體，藉以調 整混合氣體從處理室3 1内部排出之排出量。 【圖式簡單說明】 圖1 (a)〜（g)係說明本發明之配線板表面處理步驟之截 面圖。 圖2(a)、（b)係說明電氣裝置製造步驟之截面圖。 _ 圖3係說明本發明的表面處理方法所使用的處理裝置 例之截面圖。 圖4係說明本發明的其他表面處理方法所使用的配線 板之俯視圖。 【主要元件符號說明】 h··處理裝置 2…電氣裝置 !〇···配線板 ® 11…樹脂膜（基材） b…金屬配線層 2〇···電氣零件（半導體元件） 21…元件本體 25…連接端子 28···電漿 3 1 ···處理室 18 200521204 32…第一開口 33…第二開口 36···電極嘴The case described above is directed to the case where the electrical device 2 is manufactured using the adhesive film 19 (the adhesive is formed into a film shape), but the present invention is not limited to this, and a paste-like adhesive can be applied to the wiring board 1 〇 and either or both of the semiconductor element 2Q, and the wiring board 1 and the semiconductor element 20 are bonded to each other through the adhesive to produce an electrical device. The resin constituting the base material 11 is not limited to polyimide resin, and the base material Π may be formed of various resins such as a polyester resin. The base material U is not limited to a resin film, and various materials such as a glass substrate can be used. When the substrate π is made of a flexible 16 200521204 resin film and the film thickness of the metal wiring layer is thin enough so as not to affect the flexibility of the substrate 1, the so-called flexible wiring board having the entire wiring board 10 is flexible. The electrical components bonded to the wiring board 10 are not limited to the semiconductor element 20, and for example, various electrical components such as other flexible wiring boards and rigid substrates can be bonded to form the electrical device 2. 7 The adhesive used in the method for manufacturing an electrical device of the present invention is not particularly limited. When considering the connection reliability of the electrical device 2, it is better to use an anisotropic conductive adhesive in which conductive particles are dispersed in the adhesive. . The thermosetting resin used in the adhesive is not limited to epoxy resin, and melamine resin, phenol resin, etc. can also be used. Additives such as resins other than thermosetting resins such as thermoplastic resins, anti-aging agents, and colorants can be added to the adhesive. Regarding the adhesive, in addition to those containing a thermosetting resin, those containing a photopolymerizable resin such as an acrylate resin can also be used. The case described above is for the case where the metal wiring layer 15 is made of copper, but the present invention is not limited to this. The metal wiring layer 15 can also be made of various conductive materials such as aluminum and alloys. The metal wiring layer is made of, for example, a metal thin film formed on the surface of the substrate u by a deposition method such as a vapor deposition method. Alternatively, a metal wiring layer may be formed of a metal hafnium, and a resin composition may be coated on the surface of the metal box and fired to form a substrate 11 made of a resin film. The situation described above is directed to the mixed gas being ejected from the electrode nozzle 36 when the wiring board 10 travels, but the present invention is not limited to this. In order to save the consumption of the mixed gas and reduce the cost, the wiring board H can also be used. ) 17 200521204 Stops the discharge of the mixed gas while traveling, and starts the discharge of the mixed gas when the wiring board stops moving. ° The processing chamber 31 used in the present invention can be connected to the exhaust system, and the mixed gas is ejected from the inside of the processing chamber 31 while the exhaust system is exhausted to adjust the mixed gas from the inside of the processing chamber 31. Discharge volume. [Brief description of the drawings] Figs. 1 (a) to (g) are sectional views illustrating the surface treatment steps of the wiring board of the present invention. 2 (a) and (b) are cross-sectional views illustrating manufacturing steps of an electrical device. _ Fig. 3 is a cross-sectional view illustrating an example of a processing apparatus used in the surface processing method of the present invention. Fig. 4 is a plan view illustrating a wiring board used in another surface treatment method of the present invention. [Description of main component symbols] h ·· Processing device 2 ... Electrical device! 〇 ·· Wiring board® 11 ... Resin film (base material) b ... Metal wiring layer 2 ··· Electrical component (semiconductor component) 21 ... Element Body 25 ... Connection terminal 28 ... Plasma 3 1 ... Processing chamber 18 200521204 32 ... First opening 33 ... Second opening 36 ... Electrode nozzle