TWI288968B - Package structure with heat sink - Google Patents

Package structure with heat sink Download PDF

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Publication number
TWI288968B
TWI288968B TW093141150A TW93141150A TWI288968B TW I288968 B TWI288968 B TW I288968B TW 093141150 A TW093141150 A TW 093141150A TW 93141150 A TW93141150 A TW 93141150A TW I288968 B TWI288968 B TW I288968B
Authority
TW
Taiwan
Prior art keywords
heat sink
wafer
package structure
lead frame
recess
Prior art date
Application number
TW093141150A
Other languages
English (en)
Other versions
TW200623366A (en
Inventor
Hung-Sheng Chen
Original Assignee
Advanced Semiconductor Eng
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Semiconductor Eng filed Critical Advanced Semiconductor Eng
Priority to TW093141150A priority Critical patent/TWI288968B/zh
Publication of TW200623366A publication Critical patent/TW200623366A/zh
Application granted granted Critical
Publication of TWI288968B publication Critical patent/TWI288968B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Lead Frames For Integrated Circuits (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Description

1288968 九、發明說明： 【發明所屬之技術領域】 本發明係關於一種封裝結構，詳言之’係關於一種具有 散熱片之封裝結構。 【先前技術】 參考圖1所示，習知之封裝結構10包括一晶片12、一 導線架15、一散熱片17及一封裝材料18。該封裝材料 用以封裝該晶片12、該導線架15及該散熱片17。該導線 木15具有一晶片座151及複數個接腳j 52、Μ]。該晶片座 151用以承置該晶片12。該等接腳152、153用以與該晶片 12電性連接，其中，該等接腳152、153係㈣複數個導線 13與该晶片12電性連接。 該散熱片17設置於該導線架15之下，該散熱μ 17具有 -第-表面171及一第二表面172，該第二表面Μ係相對 於》亥第-表面171。該第一表面171係朝向該導線架」$， 且該第-表面與171該導線架15之晶片座151接觸。由於 散熱片17與該晶片座151之介面無法报緊密之接觸。封膠 時’少許之封裝材料會存在於該散熱片17與該晶片座⑸ 之間且易包覆水氣。當水氣受熱膨服時，會使晶片座⑸ 上之晶片12及封裝材料18受力破壞。另外，由於 『封裝材料18及導線架15三者之熱膨脹係數不—^， 故當其受熱時會產生内應力，造成晶片12受力而破裂，及 月文…片17與β亥封裝結構j 〇分離（制⑽)現象。 因此，實有必要提供一種創新且富進步性之封裝結構， 93829.doc 1288968 以解決上述問題。 【發明内容】 本發明之目的在於提供一 包括-晶片、_導線加—f具有政熱片之封裝結構，其 竿且有一 B K r木放熱片及一封裝材料。該導線 7有Γ 座及複數個接腳。該晶片座用以承置該0曰 、哀曰曰片電性連接。該散熱片設置於唁 凹槽。該第二表面係相對於該第一表面 向該導線架。該凹槽係形成於該第一表置 :::該晶片座之位置之下，該凹槽與該晶片座::觸 且具有一間距。該封裝材料 該散熱p 、㈣線架及 因此’利用本發明之勒献 勒月之政熱片具有凹槽，使得晶片座與散 … ' 貝，及散熱片與封裝結構分離 之現象，以提尚封裴結構之可靠度。 【實施方式】 石月參閱圖2 ’其顯示本發明 _ 、于裝、、、吉構示忍圖。本發明 之封裝結構20包括一晶片^ 日日片22、一導線架25、一散熱片27 及一封裝材料28。該封裝材料？ ^ A 衣何枓28用以封裝該晶片22、該 導線架25及該散熱片27。該|綠加， ▲ 乂導線木25具有一晶片座251 及複數個接腳252、253〇該晶片应 日日月座251用以承置該晶片22〇 该等接腳252、253用以與該a η 咕λ ，、巧曰日片22電性連接，其中，該 等接腳252、253係利用複數個邋 歡個導線23與該晶片22電性連 接。 該散熱片27設置於該導線牟 守深木25之下，該散熱片27具有 93829.doc J288968 第表面27卜一第二表面272及一凹槽273,該第二 相對於該第一表面㈣第—表面271係朝：該 導線架25。該凹槽273係形成於該第―表面π，該 273設置於相對於該晶片座⑸之位置之下，該凹槽27曰3 與该晶片座251不接觸，且具有一間距。 由於該凹槽273之尺寸大於該導線架25之該晶片座251 寸使知該凹槽273與該晶片纟251不接觸且具有一 門距目此’部分之該封裝材料28可填充於該導線架乃 與該散熱片27之該第一表面271間，以解決習知技術中散 熱片與晶片座之接觸界面間易包覆水氣之問題。 並且，由於在該導線架25與該散熱片27間不接觸且具 有該封裝材料28’不會有水氣之問題，可降低因水氣受^ 膨服造成該晶片22及該封裝結構20受力之破壞，降低晶 片之破損。 M ▲再者，由於部分之該封裝材料28填充於該導線架25與 該散熱片27之該第一表面271 @，使得該封裝材料μ與 該散熱片27之接觸面積加大，可增加該散熱片27與該封 裝材料28之結合力，降低該散熱片27與該封裝結構分 離（delam)現象。 另外’本發明之該散熱片27之該第二表面272係暴露於 外界未被4封|材料28包覆封裝，以增加散熱效果。 惟上述實施例僅為說明本發明之原理及其功效，而非限 制本發明。SUb，習於此技術之人士可在不違背本發明之 精神對上述實施例進行修改及變化。本發明之權利範圍應 如後述之申請專利範圍所列。 〜 93829.doc 1288968 【圖式簡單說明】 圖1為習知之封裝結構示意圖；及 圖2為本發明具散熱片之封裝結構示意圖。 【圖式元件符號說明】 10 習知之封裝結構 12 晶片 13 導線 15 導線架 17 散熱片 18 封裝材料 20 本發明之封裝結構 22 晶片 23 導線 25 導線架 27 散熱片 28 封裝材料 151 晶片座 152 、 153 接腳 171 第一表面 172 第二表面 251 晶片座 252 、 253 接腳 271 第一表面 272 第二表面 273 凹槽 93829.doc

Claims (1)

  1. — --Π,, , . , | , _ 》日修(更)正替 I28R965 1 〇V；ti4115〇號專利申請案 中文申請專利範圍替換本(9、5年12月） 十、申請專利範園： 種具有散熱片之封裝結構，包括·· 一晶片； 、導線架，具有一晶片座及複數個接腳，該晶片座用 以^該晶片’該等接腳用以與該晶片電性連接； 一散熱片m該導線架之下，該散熱片具有一第 :亡面、-第二表面及一凹槽’該第二表面係相對於該 弟：表面’該第一表面係朝向該導線架，該凹槽係形成 於該第-表面，該凹槽設置於相對於該晶片座之位置之 下’該凹槽與該晶片座不接觸，且具有一間距；及 裝材料’用以封裝該晶片、該導線架及該散熱片， 部分封裝材料填充於該導線架與該散熱片之該第一表面 間，該導線架與散熱片之間係填充封裝材料，使得該凹 槽與該晶片座不接觸。 2· 2明求項1之封裝結構，其中該散熱片之該第二表面係暴 路於外界，未被該封裝材料包覆封裳。 如明求項1之封裝結構，其中該凹槽之尺寸大於該導線架 之該晶片座之尺寸。 93829-Rel -Claim-Amended(替換本).d〇c
TW093141150A 2004-12-29 2004-12-29 Package structure with heat sink TWI288968B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW093141150A TWI288968B (en) 2004-12-29 2004-12-29 Package structure with heat sink

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Application Number Priority Date Filing Date Title
TW093141150A TWI288968B (en) 2004-12-29 2004-12-29 Package structure with heat sink

Publications (2)

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TW200623366A TW200623366A (en) 2006-07-01
TWI288968B true TWI288968B (en) 2007-10-21

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