TWI286502B - Diamond conditioning of soft chemical mechanical planarization/polishing (CMP) polishing pads - Google Patents

Diamond conditioning of soft chemical mechanical planarization/polishing (CMP) polishing pads Download PDF

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Publication number
TWI286502B
TWI286502B TW092136019A TW92136019A TWI286502B TW I286502 B TWI286502 B TW I286502B TW 092136019 A TW092136019 A TW 092136019A TW 92136019 A TW92136019 A TW 92136019A TW I286502 B TWI286502 B TW I286502B
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Taiwan
Prior art keywords
diamond
soft
chemical mechanical
polishing
mechanical planarization
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TW092136019A
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Chinese (zh)
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TW200418612A (en
Inventor
Philip Slutsky
Dan Doron
Boaz Eldad
Barak Yardeni
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Intel Corp
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Publication of TW200418612A publication Critical patent/TW200418612A/en
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Publication of TWI286502B publication Critical patent/TWI286502B/en

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/007—Cleaning of grinding wheels

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)
  • Polishing Bodies And Polishing Tools (AREA)

Abstract

Conditioning of chemical mechanical planarization (CMP) using conventional diamond-embedded abrasive strips are well suited to condition conventional ""hard"" polishing but not soft polishing pads because the diamonds not only remove waste material, but they also damage the polishing surface of the pad. Embodiments of the present invention condition soft polishing pads using diamond strips without damaging the soft polishing pad.

Description

(2) 1286502 【發明內容】 一種修整拋光墊的方法，是以習知嵌入鑽石的硏磨盤 或硏磨帶’將拋光墊磨掉。雖然習知嵌入鑽石的硏磨帶足 以用於修整粗拋光用的’硬’拋光墊，但卻不適於修整精拋 光用的’軟’拋光墊。當以嵌入鑽石的硏磨盤修整軟拋光墊 時’鑽石不僅移除無用的材料，且同時亦損害拋光墊的拋 光表面。 【實施方式】 第一圖是本發明化學機械平面化（CMP)拋光系統 100之一實施例的示意圖。該CMP拋光系統1〇〇包含一殼 體101、一拋光頭102、一控制面板1〇3、一滾筒1〇4、一 主軸105、一晶圓106、—基座107、·一軟抛光墊108、一 修整臂110、一鑽石（人工鑽石）修整器112、漿體槽114 、一主軸1 1 5、一水槽1 1 6、和一電機械設備！彳8。漿體槽 114和/或水槽116可位於殼體1〇1內或與殻體分離。電 機械設備1 1 8可包含直立驅動器、旋轉驅動器、或通常用 於操作C Μ P拋光系統內之臂、馬達、或其他裝置的其他 設備。 滾筒1 04組裝於殻體1 01內，且可由電機械設備彳彳8內 的馬達（未示）所轉動。拋光頭1 〇 2組裝於主軸1 0 5上， 且可由電機械設備118內的馬達（未示）所轉動。晶圓 1 〇6設於拋光頭1〇2，且使待拋光面向下並遠離拋光頭1〇2 。以黏劑將軟拋光墊1 〇 8設於滾筒1 〇 4。如箭頭1 2 0和1 2 2 -6- (3) 1286502 所示’在拋光晶圓1 〇 6時，拋光頭1 ο 2的旋轉方向可與拋 光墊1 08的旋轉方向相反；或者，拋光頭1 〇2旋轉時，辕 筒1 0 4可保持靜止；或者，拋光頭1 〇 2保持靜止，而滾筒 1 04旋轉。在拋光晶圓1 06時，漿體槽1 14輸送漿體至軟拋 光墊1 0 8的表面。 電機械設備118內的馬達（未示）可移動修整臂11() ，當修整軟拋光墊1 〇 8時，修整臂1 1 〇於基座1 〇 7中樞轉。 在修整軟拋光墊1 〇 8時，水槽1 1 6可供給例如飮用水或去 離子水的一淸洗溶液至軟拋光墊的表面。 第二圖是本發明化學機械平面化（CMP)拋光系統 1 〇 〇實施例所執行之方法2 0 0的流程圖。使用具有可讀機 器指令的一可讀機器媒介，使一處理器執行方法2 0 0。當 然方法200只是一種例示的方法，因此可使用其他的方法 。例示的方法2 0 0可用於移除金屬、氧化物、玻璃、矽等 。雖然例示的方法2 0 0以晶圓做說明，但例示的方法2 0 〇 亦可用於半導體、記憶碟、或其他需要滑順、平坦、精拋 光等的適合物體，例如透鏡和反射鏡。 在方塊202中，當漿體從漿體槽1 14施於軟拋光墊1 08 的表面時，拋光頭102固持晶圓106並抵住軟拋光墊108而 轉動晶圓1 06，且滾筒1 04對晶圓1 06施一力。在方塊204 中’拋光頭102將晶圓1 06解除與軟拋光墊1 08接觸的狀態 ，且漿體停止流向軟拋光墊108的表面。 在方塊206中，使用鑽石修整器1 12修整軟拋光墊1 08 。在本發明的一實施例中，滾筒1 0 4轉動軟拋光墊1 0 8， (7) 1286502 ft ±述說明中，提出許多特定細節例如特殊程序、材 # ' ^胃等’以供完全瞭解本發明實施例，但就熟悉相關 技藝人士而言’本發明無須一或更多特定細節、或以其他 方法或元件等’仍可實施。在其他例子中，並未顯示或詳 糸田S 1習知構造或操作，以避免模糊而影響對說明書的瞭 解。 各S操作以多重操作分開輪流執行的方式說明，以助 瞭解本發明實施例。但其說明順序並不構成意含該等操作 需要此順序’亦不意含本發明提出之操作須依此順序執行 〇 說明書中所謂’某一實施例’或’一實施例，，意指依一 實施例描述的特殊形狀、構造、程序、方塊、特徵，係包 含於本發明的至少一實施例。因此，說明書中各處出現的 ’在某一實施例’或’在一實施例’片語，不一定指同一實施 例。此外，一實施例或更多實施例的特殊形狀、構造、特 徵，可以合適的方式結合。 下列申請專利範圍所用的語詞，不應構成將本發明限 制於說明書和申請專利範圍所揭露的特定實施例。反之， 本發明實施例的範圍完全由下列申請專利範圍所決定，該 等申請專利範圍依據解釋申請專利範圍原則解讀。 【圖式簡單說明】 在圖式中，類似的參考號碼一般指示相同、功能上類 似、和/或構造上均等的兀件。以爹考數字最左邊的位數 -11 - (8) 1286502 (CMP) /拋光系統之 化（C Μ P )拋光系統 墊的例子； 的操作；及 修整器。 指示元件第一次出現的圖式。其中： 第1圖是本發明化學機械平面化 一實施例的示意圖； 第2圖是本發明以化學機械平面 實施例所執行之方法的流程圖； 第3圖說明本發明實施例軟拋光 第4圖說明本發明實施例修整臂 第5圖說明本發明實施例之鑽石 [圖號說明] 100 化學機械平面化拋光系統 1 01 殼體 1 02 拋光頭 103 控制面板 1 04 滾筒 105 主軸 1 06 晶圓 107 基座 108 軟拋光墊 112 鑽石修整器 1 14 漿體槽 116 水槽 118 電機械設備 120 箭頭 (9) 1286502 122 箭頭 200 方法 302 孔 402 位置 406 弟一^位置 408 箭頭 502 底部 504 鑽石(2) 1286502 SUMMARY OF THE INVENTION A method of dressing a polishing pad is to remove the polishing pad by a conventional honing disk or honing tape. While conventional diamond-engraved honing tapes are used to trim 'hard' polishing pads for rough polishing, they are not suitable for trimming 'soft' polishing pads. When trimming a soft polishing pad with a diamond-encrusted honing disc, the diamond not only removes useless material, but also damages the polishing surface of the polishing pad. [Embodiment] The first figure is a schematic view of an embodiment of the chemical mechanical planarization (CMP) polishing system 100 of the present invention. The CMP polishing system 1 includes a housing 101, a polishing head 102, a control panel 1〇3, a roller 1〇4, a spindle 105, a wafer 106, a susceptor 107, and a soft polishing pad. 108. A trimming arm 110, a diamond (artificial diamond) dresser 112, a slurry tank 114, a spindle 1 15 , a sink 1 16 , and an electromechanical device!彳 8. The slurry tank 114 and/or the water tank 116 may be located within or separate from the housing 1〇1. Electromechanical device 1 18 may include an upright drive, a rotary drive, or other device typically used to operate an arm, motor, or other device within a C Μ P polishing system. The drum 104 is assembled within the housing 101 and is rotatable by a motor (not shown) within the electromechanical device 彳彳8. The polishing head 1 〇 2 is assembled on the spindle 1 0 5 and is rotatable by a motor (not shown) in the electromechanical device 118. Wafer 1 〇6 is provided on the polishing head 1〇2, and the surface to be polished is faced downward and away from the polishing head 1〇2. The soft polishing pad 1 〇 8 is placed on the drum 1 以 4 with an adhesive. As indicated by arrows 1 2 0 and 1 2 2 -6- (3) 1286502 'When polishing wafer 1 〇6, the direction of rotation of polishing head 1 ο 2 may be opposite to the direction of rotation of polishing pad 108; or, polishing When the head 1 〇 2 is rotated, the cylinder 1 0 4 can remain stationary; alternatively, the polishing head 1 〇 2 remains stationary while the drum 104 rotates. At the time of polishing the wafer 106, the slurry tank 1 14 transports the slurry to the surface of the soft polishing pad 108. A motor (not shown) within the electromechanical device 118 moves the trimming arm 11(), and when the soft polishing pad 1 〇 8 is trimmed, the trimming arm 1 1 pivots in the base 1 〇 7 . When the soft polishing pad 1 〇 8 is trimmed, the water tank 1 16 can supply a rinsing solution such as water or deionized water to the surface of the soft polishing pad. The second figure is a flow chart of the method 200 performed by the chemical mechanical planarization (CMP) polishing system 1 〇 〇 embodiment of the present invention. A processor executes method 2000 using a readable machine medium having readable machine instructions. Of course, method 200 is only an exemplary method, so other methods can be used. The exemplified method 200 can be used to remove metals, oxides, glass, tantalum, and the like. Although the illustrated method 200 is illustrated with a wafer, the illustrated method 20 〇 can also be used for semiconductors, memory disks, or other suitable objects that require smooth, flat, polished, etc., such as lenses and mirrors. In block 202, when the slurry is applied from the slurry tank 1 14 to the surface of the soft polishing pad 108, the polishing head 102 holds the wafer 106 and rotates the wafer 106 against the soft polishing pad 108, and the roller 104 Apply a force to the wafer 106. In block 204, the polishing head 102 releases the wafer 106 from the soft polishing pad 108, and the slurry stops flowing to the surface of the soft polishing pad 108. In block 206, the soft buff pad 1 08 is trimmed using a diamond trimmer 1 12 . In an embodiment of the invention, the drum 1 0 4 rotates the soft polishing pad 1 0 8, (7) 1286502 ft ± in the description, many specific details such as special procedures, material # '^胃, etc. are proposed for complete understanding The present invention is described, but it will be apparent to those skilled in the art that the invention may be practiced without one or more specific details or other methods or components. In other examples, the construction or operation of the S1 S1 is not shown or detailed to avoid obscuration and affect the understanding of the specification. Each S operation is illustrated in a manner in which multiple operations are performed in a separate manner to assist in understanding embodiments of the present invention. However, the order of the description does not constitute that the operation requires the order. It is also not intended that the operations proposed by the present invention are to be performed in this order. In the specification, the term "a certain embodiment" or "an embodiment" means The particular shapes, configurations, procedures, blocks, and features described in the embodiments are included in at least one embodiment of the invention. Therefore, the appearance of the <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; Furthermore, the particular shapes, configurations, features of an embodiment or more may be combined in a suitable manner. The words used in the following claims are not intended to limit the invention to the specific embodiments disclosed herein. On the contrary, the scope of the embodiments of the present invention is fully determined by the scope of the following claims. BRIEF DESCRIPTION OF THE DRAWINGS In the drawings, like reference numerals generally indicate identical, functionally similar, and/or structurally equivalent components. To the leftmost digit of the reference number -11 - (8) 1286502 (CMP) / polishing system (C Μ P) polishing system example of the pad; operation; and trimmer. Indicates the pattern in which the component first appears. 1 is a schematic view of an embodiment of chemical mechanical planarization of the present invention; FIG. 2 is a flow chart of a method performed by the chemical mechanical plane embodiment of the present invention; and FIG. 3 is a view of soft polishing of the embodiment of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 5 is a perspective view of a diamond according to an embodiment of the present invention. [Illustration of the invention] 100 Chemical mechanical planarization polishing system 1 01 Housing 1 02 Polishing head 103 Control panel 1 04 Roller 105 Spindle 1 06 Wafer 107 Base 108 Soft Polishing Pad 112 Diamond Dresser 1 14 Slurry Tank 116 Sink 118 Electromechanical Device 120 Arrow (9) 1286502 122 Arrow 200 Method 302 Hole 402 Position 406 Brother One ^ Position 408 Arrow 502 Bottom 504 Diamond

Claims (1)

(1) I 補充 1286502 拾、申請專利範圍 附件2A : ^ 第92 1 360 1 9號專利申請案 中文申請專利範圍替換本 ^ ' 民國95年4月14日修正 1_一種化學機械平面化（CMP)裝置，包含： 黏附於一殻體內之一滾筒的一軟拋墊，其中該軟拋光 墊包含在聚醋膜上的起毛透氣多孔氨甲酸乙酯的至少其中 之一；及 組裝於該殼體內的一墊修整臂，該墊修整臂具有附接 於其上的一鑽石修整器，該鑽石修整器用以修整該軟拋光 墊，該修整臂用以在修整該軟拋墊期間，經由該鑽石修整 器施加小於每平方英吋約三磅（psi)的一向下力於該軟 拋光墊。 2 .如申請專利範圍第1項所述化學機械平面化裝置， 其中該軟拋光墊包含在一聚酯膜基材上的起毛透氣多孔氨 甲酸乙酯層。 3. 如申請專利範圍第1項所述化學機械平面化裝置， 其中該軟拋光墊包含在一大致可壓縮氨甲酸乙酯基材上的 起毛透氣多孔氨甲酸乙酯層。 4. 如申請專利範圍第1項所述化學機械平面化裝置， 其中該鑽石修整器包含一鑽石帶。 5 .如申請專利範圍第1項所述化學機械平面化裝置， 其中該鑽石帶包含嵌入一底部的合成鑽石。(1) I Supplement 1286502 Pickup, Patent Application Scope Attachment 2A: ^ No. 92 1 360 1 9 Patent Application Replacement of Chinese Patent Application Scope ^ 'Revised on April 14, 1995 1_A Chemical Mechanical Planarization (CMP) The device comprising: a soft pad attached to a roller in a housing, wherein the soft polishing pad comprises at least one of the fuzzed porous urethane on the polyester film; and assembled in the housing a pad dressing arm having a diamond dresser attached thereto, the diamond dresser for trimming the soft bake pad, the dressing arm for trimming the diamond during trimming the soft pad The device applies a downward force of less than about three pounds per square inch (psi) to the soft polishing pad. 2. The chemical mechanical planarization device of claim 1, wherein the soft polishing pad comprises a raised permeable porous urethane layer on a polyester film substrate. 3. The chemical mechanical planarization device of claim 1, wherein the soft polishing pad comprises a raised, gas permeable porous urethane layer on a substantially compressible urethane substrate. 4. The chemical mechanical planarization device of claim 1, wherein the diamond dresser comprises a diamond band. 5. The chemical mechanical planarization device of claim 1, wherein the diamond band comprises a synthetic diamond embedded in a bottom.
TW092136019A 2003-03-28 2003-12-18 Diamond conditioning of soft chemical mechanical planarization/polishing (CMP) polishing pads TWI286502B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/402,578 US20040192178A1 (en) 2003-03-28 2003-03-28 Diamond conditioning of soft chemical mechanical planarization/polishing (CMP) polishing pads

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TW200418612A TW200418612A (en) 2004-10-01
TWI286502B true TWI286502B (en) 2007-09-11

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TW095113436A TWI303406B (en) 2003-03-28 2003-12-18 Diamond conditioning of soft chemical mechanical planarization/polishing (cmp) polishing pads

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US (2) US20040192178A1 (en)
EP (1) EP1641596A1 (en)
KR (1) KR100818591B1 (en)
CN (1) CN1694783A (en)
AU (1) AU2003297156A1 (en)
TW (2) TWI286502B (en)
WO (1) WO2004094106A1 (en)

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TWI801997B (en) * 2021-05-20 2023-05-11 大陸商杭州眾硅電子科技有限公司 A pad conditioner ,conditioner head and a spinning part therein

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EP1641596A1 (en) 2006-04-05
US20040192178A1 (en) 2004-09-30
TWI303406B (en) 2008-11-21
US20060183410A1 (en) 2006-08-17
AU2003297156A1 (en) 2004-11-19
WO2004094106A1 (en) 2004-11-04
CN1694783A (en) 2005-11-09
KR100818591B1 (en) 2008-04-02
TW200705376A (en) 2007-02-01
KR20050112113A (en) 2005-11-29

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