WO2004094106A1 - Diamond conditioning of soft chemical mechanical planarization/polishing (cmp) polishing pads - Google Patents
Diamond conditioning of soft chemical mechanical planarization/polishing (cmp) polishing pads Download PDFInfo
- Publication number
- WO2004094106A1 WO2004094106A1 PCT/US2003/039969 US0339969W WO2004094106A1 WO 2004094106 A1 WO2004094106 A1 WO 2004094106A1 US 0339969 W US0339969 W US 0339969W WO 2004094106 A1 WO2004094106 A1 WO 2004094106A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- polishing pad
- soft polishing
- soft
- cmp
- diamond
- Prior art date
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
- B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
- B24B53/007—Cleaning of grinding wheels
Definitions
- Embodiments of the present invention relate to chemical mechanical planarization/polishing (CMP) and, in particular, to conditioning of CMP polishing pads.
- CMP chemical mechanical planarization/polishing
- CMP Chemical mechanical planarization/polishing
- a typical CMP system includes a wafer carrier and a platen mounted in a housing.
- a polishing pad is secured to the platen and the wafer to be polished is secured in the wafer carrier.
- a typical CMP process operates as follows.
- the wafer carrier rotates the wafer and/or the platen rotates the polishing pad.
- Chemical slurry is applied to the surface of the polishing pad and the wafer is brought into contact with the polishing pad and is polished (or planarized).
- the combination of applying the chemical slurry and the mechanical rotation leads to the term "chemical-mechanical planarization.”
- polishing pad surface be clean and free of surface irregularities.
- the process of cleaning the polishing pad is sometimes referred to a "conditioning” or "refreshing.”
- One method of conditioning polishing pads is to abrade them with a conventional diamond-embedded abrasive disk or strip.
- conventional diamond-embedded abrasive strips are well suited to condition "hard” polishing pads used for rough polishing, they are not well suited to condition "soft” polishing pads used for fine polishing.
- the diamonds When a soft polishing pad is conditioned with a diamond-embedded abrasive disk, the diamonds not only remove waste material, but they also damage the polishing surface of the pad.
- FIG. 1 is schematic diagram of a chemical mechanical planarization/polishing (CMP) polishing system according to an embodiment of the present invention
- Figure 2 is a flowchart illustrating a process performed by a CMP polishing system in according to embodiments of the present invention
- Figure 3 illustrates an example soft polishing pad according to an embodiment of the present invention
- Figure 4 illustrates operation of a conditioning arm according to an embodiment of the present invention.
- Figure 5 illustrates a diamond conditioner according to an embodiment of the present invention.
- FIG. 1 is schematic diagram of a chemical mechanical planarization (CMP) polishing system 100 according to an embodiment of the present invention.
- the CMP polishing system 100 includes a housing 101, a polishing head 102, a control panel 103, a platen 104, a spindle 105, a wafer 106, a base 107, a soft polishing pad 108, a conditioning arm 110, a diamond (or artificial diamond) conditioner 112, a slurry tank 114, a spindle
- the slurry tank 114 and/or the water tank 116 may be located in or separate from the housing 101.
- the electromechanical equipment 118 may include vertical drivers, rotational drivers, controllers, or other equipment generally used to operate arms, motors, and other devices in CMP polishing systems.
- the platen 104 is mounted in the housing 101 and may be rotated by a motor (not shown) in the electromechanical equipment 118.
- the polishing head 102 is mounted on the spindle 105 and may be rotated by a motor (not shown) in the electromechanical equipment 118.
- the wafer 106 is mounted with the surface to be polished face down and away from the polishing head 102.
- the soft polishing pad 108 mounted to the platen using an adhesive.
- the polishing head 102 may be rotated in a direction opposite to the rotation of the polishing pad 108 may be, as shown by arrows 120 and 122.
- the polishing head 102 may rotate while the platen 104 remains stationary.
- the polishing head 102 may be stationary while the platen 104 rotates.
- the slurry tank 114 delivers slurry to the surface of the soft polishing pad 108 during wafer 106 polishing.
- the conditioning arm 110 pivots in its base 107 when conditioning the soft polishing pad 108.
- a motor (not shown) in the electromechanical equipment 118 may move the conditioning arm 110.
- the water tank 116 may dispense a rinsing solution, such as potable water or de-ionized (DI) water, to the surface of the soft polishing pad 108 during conditioning of the soft polishing pad 108.
- DI de-ionized
- FIG. 2 is a flowchart illustrating a process 200 performed by the CMP polishing system 100 according to embodiments of the present invention.
- a machine- readable medium with machine-readable instructions thereon may be used to cause a processor to perform the process 200.
- the process 200 is only an example process and other processes may be used.
- the example process 200 may be used to remove metal, oxides, glass, silicon, etc.
- the example process 200 is described with reference to wafers, the example process 200 may be used for semiconductors, memory disks, or other suitable objects requiring smoothness, planarity, fine polishing, etc., such as lenses and mirrors.
- the head 102 holds the wafer 106 and rotates the wafer 106 against the soft polishing pad 108 as slurry from the slurry tank 114 is applied to the surface of the soft polishing pad 108 and the platen 104 applies a force to the wafer 106.
- the head 102 disengages the wafer 106 from contact with the soft polishing pad 108 and the slurry stops flowing to the surface of the soft polishing pad 108.
- the soft polishing pad 108 is conditioned using the diamond conditioner 112.
- the platen 104 rotates the soft polishing pad 108, rising solution from the water tank 116 rinses the soft polishing pad 108, e.g., by supplying DI water to the surface of the soft polishing pad 108, and the conditioning arm 110 with the diamond conditioner 112 sweeps across (e.g., back and forth) the soft polishing pad 108.
- polishing of the soft polishing pad 108 may be described in some embodiments as being performed ex situ (between wafer 106 polishings), polishing of the soft pat 108 in other embodiments may be performed in situ (while wafers 106 are being polished), or some combination of both.
- the soft polishing pad 108 may be conditioned according to embodiments of the present invention prior to polishing any wafers 106.
- One or a combination of the following process parameters may be modified to improve the process for soft pad 108 conditioning using the diamond conditioner 112 to ensure that the conditioning arm 110 with the diamond conditioner 112 do not destroy or significantly reduce the lifetime of the soft polishing pad 108.
- the lifetime of the soft polishing pad 108 is significantly increased. Increased soft polishing pad 108 lifetime results in reduced labor costs and costs of parts, as well as improved processes, (e.g., soft polishing pads 108 do not have to be changed as often).
- the conditioning arm 110 applies approximately 0.25 psi to the soft polishing pad 108 through the diamond conditioner 112 as opposed to approximately three psi applied using conventional hard polishing pad techniques.
- the platen and thus the soft polishing pad does not rotate.
- the rotational speed of the platen 104 and thus the soft polishing pad 108 may be approximately one hundred revolutions per minute 100 (rpm)
- the volumetric flow rate of DI water from the DI water tank 116 may be one gallon per minute (gpm).
- the volumetric flow rate may be anywhere from zero to approximately seven gallons per minute.
- the down force applied to the soft polishing pad by the diamond conditioner 112 may be 0.25 psi.
- the diamond conditioner makes at least ten sweeps. In one embodiment, the diamond conditioner 112 makes one sweep across the soft polishing pad.
- Figure 3 illustrates the example soft polishing pad 108 according to an embodiment of the present invention.
- the example soft polishing pad 108 includes several pores 302 and may be made from napped poromerics-porous urethane layers on a mylar or compressible urethane substrate.
- the example soft polishing pad 108 may be a soft pad made with tangled polyester fibers coated with polyurethane.
- the example soft polishing pad 108 may be a felt sheet of fibers impregnated with micro porous elastomer.
- the example soft polishing pad 108 may be a porous thermoplastic resin matrix, typically polyurethane, reinforced with a fibrous network such as a felted mat of polyester fibers.
- An example of a suitable soft pad includes any of the Politex® Series polishing pads available from Rodel Holdings in Wilmington, Delaware.
- the soft polishing pads 108 are to be distinguished from known hard polishing pads, which include micro porous polyurethane polishing pads that are relatively hard and not as compressible when compared to other types of polishing pads and polyurethane impregnated felt polishing pads.
- hard pads include the SUB A 1000 Series polishing pads and the SUBA® Pads available from Rodel in Phoenix, Arizona.
- Figure 4 illustrates operation of the conditioning arm 110 according to an embodiment of the present invention.
- the conditioning arm 110 (and the diamond conditioner 112) remain in the position 402 situated adjacent to the perimeter of the soft polishing pad 108.
- the conditioning arm 110 is pivoted at one end by the base 107, lowered onto the soft polishing pad 108, and swept along an arc indicated by the arrows 408 from the position 402 across the surface of the soft polishing pad 108 (as shown by phantom lines) to a second position 406 adjacent to the other side of the perimeter of the soft polishing pad 108 (also shown by phantom lines).
- FIG. 5 illustrates the diamond conditioner 112 according to an embodiment of the present invention.
- the diamond conditioner 112 includes a base 502 having diamonds 504.
- the base 502 may be any suitable rigid substrate.
- the diamonds 504 may be synthetic diamonds, natural diamonds, etc.
- the diamonds 504 may be placed on the base 502 using chemical vapor deposition (CVD).
- the diamonds 404 may be embedded in the base 502.
- the diamond conditioner 112 may be formed by embedding diamond particles in nickel coated on the surface of a rigid substrate according to well-known or proprietary techniques.
- Embodiments of the invention can be implemented using hardware, software, firmware, or a combination of hardware and software.
- the software may be stored on a computer program product (such as an optical disk, a magnetic disk, a floppy disk, etc.) or a program storage device (such as an optical disk drive, a magnetic disk drive, a floppy disk drive, etc.).
Abstract
Description
Claims
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP03816708A EP1641596A1 (en) | 2003-03-28 | 2003-12-15 | Diamond conditioning of soft chemical mechanical planarization/polishing (cmp) polishing pads |
AU2003297156A AU2003297156A1 (en) | 2003-03-28 | 2003-12-15 | Diamond conditioning of soft chemical mechanical planarization/polishing (cmp) polishing pads |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/402,578 | 2003-03-28 | ||
US10/402,578 US20040192178A1 (en) | 2003-03-28 | 2003-03-28 | Diamond conditioning of soft chemical mechanical planarization/polishing (CMP) polishing pads |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2004094106A1 true WO2004094106A1 (en) | 2004-11-04 |
Family
ID=32989732
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2003/039969 WO2004094106A1 (en) | 2003-03-28 | 2003-12-15 | Diamond conditioning of soft chemical mechanical planarization/polishing (cmp) polishing pads |
Country Status (7)
Country | Link |
---|---|
US (2) | US20040192178A1 (en) |
EP (1) | EP1641596A1 (en) |
KR (1) | KR100818591B1 (en) |
CN (1) | CN1694783A (en) |
AU (1) | AU2003297156A1 (en) |
TW (2) | TWI286502B (en) |
WO (1) | WO2004094106A1 (en) |
Cited By (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7651386B2 (en) | 2005-09-09 | 2010-01-26 | Chien-Min Sung | Methods of bonding superabrasive particles in an organic matrix |
US7658666B2 (en) | 2004-08-24 | 2010-02-09 | Chien-Min Sung | Superhard cutters and associated methods |
US7762872B2 (en) | 2004-08-24 | 2010-07-27 | Chien-Min Sung | Superhard cutters and associated methods |
US8393934B2 (en) | 2006-11-16 | 2013-03-12 | Chien-Min Sung | CMP pad dressers with hybridized abrasive surface and related methods |
US8398466B2 (en) | 2006-11-16 | 2013-03-19 | Chien-Min Sung | CMP pad conditioners with mosaic abrasive segments and associated methods |
US8777699B2 (en) | 2010-09-21 | 2014-07-15 | Ritedia Corporation | Superabrasive tools having substantially leveled particle tips and associated methods |
US8974270B2 (en) | 2011-05-23 | 2015-03-10 | Chien-Min Sung | CMP pad dresser having leveled tips and associated methods |
US9011563B2 (en) | 2007-12-06 | 2015-04-21 | Chien-Min Sung | Methods for orienting superabrasive particles on a surface and associated tools |
US9138862B2 (en) | 2011-05-23 | 2015-09-22 | Chien-Min Sung | CMP pad dresser having leveled tips and associated methods |
US9199357B2 (en) | 1997-04-04 | 2015-12-01 | Chien-Min Sung | Brazed diamond tools and methods for making the same |
US9221154B2 (en) | 1997-04-04 | 2015-12-29 | Chien-Min Sung | Diamond tools and methods for making the same |
US9238207B2 (en) | 1997-04-04 | 2016-01-19 | Chien-Min Sung | Brazed diamond tools and methods for making the same |
US9409280B2 (en) | 1997-04-04 | 2016-08-09 | Chien-Min Sung | Brazed diamond tools and methods for making the same |
US9463552B2 (en) | 1997-04-04 | 2016-10-11 | Chien-Min Sung | Superbrasvie tools containing uniformly leveled superabrasive particles and associated methods |
US9475169B2 (en) | 2009-09-29 | 2016-10-25 | Chien-Min Sung | System for evaluating and/or improving performance of a CMP pad dresser |
US9724802B2 (en) | 2005-05-16 | 2017-08-08 | Chien-Min Sung | CMP pad dressers having leveled tips and associated methods |
US9868100B2 (en) | 1997-04-04 | 2018-01-16 | Chien-Min Sung | Brazed diamond tools and methods for making the same |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005144298A (en) * | 2003-11-13 | 2005-06-09 | Seiko Epson Corp | Surface washing and modification method and surface washing and modification apparatus |
US20090061743A1 (en) * | 2007-08-29 | 2009-03-05 | Stephen Jew | Method of soft pad preparation to reduce removal rate ramp-up effect and to stabilize defect rate |
TW200929348A (en) * | 2007-11-21 | 2009-07-01 | Jian-Min Sung | Examination method for trimming chemical mechanical polishing pad and related system thereof |
US8758091B2 (en) | 2010-04-06 | 2014-06-24 | Massachusetts Institute Of Technology | Chemical-mechanical polishing pad conditioning system |
US9233451B2 (en) | 2013-05-31 | 2016-01-12 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Soft and conditionable chemical mechanical polishing pad stack |
US9238296B2 (en) | 2013-05-31 | 2016-01-19 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Multilayer chemical mechanical polishing pad stack with soft and conditionable polishing layer |
US9238295B2 (en) | 2013-05-31 | 2016-01-19 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Soft and conditionable chemical mechanical window polishing pad |
CN113183031A (en) * | 2021-05-20 | 2021-07-30 | 杭州众硅电子科技有限公司 | Dressing head rotating part, polishing pad dressing head and dresser |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20010029155A1 (en) * | 2000-01-31 | 2001-10-11 | Applied Materials, Inc. | Multi-step conditioning process |
US20020137436A1 (en) * | 2000-01-28 | 2002-09-26 | Lam Research Corporation | System and method for controlled polishing and planarization of semiconductor wafers |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3863395A (en) * | 1974-02-19 | 1975-02-04 | Shugart Associates Inc | Apparatus for polishing a spherical surface on a magnetic recording transducer |
US4739759A (en) * | 1985-02-26 | 1988-04-26 | Concept, Inc. | Microprocessor controlled electrosurgical generator |
US4927432A (en) * | 1986-03-25 | 1990-05-22 | Rodel, Inc. | Pad material for grinding, lapping and polishing |
US5585147A (en) * | 1994-06-28 | 1996-12-17 | Matsushita Electric Works, Ltd. | Process for a surface treatment of a glass fabric |
US5611943A (en) * | 1995-09-29 | 1997-03-18 | Intel Corporation | Method and apparatus for conditioning of chemical-mechanical polishing pads |
EP0779655A3 (en) * | 1995-12-14 | 1997-07-16 | International Business Machines Corporation | A method of chemically-mechanically polishing an electronic component |
US5990010A (en) * | 1997-04-08 | 1999-11-23 | Lsi Logic Corporation | Pre-conditioning polishing pads for chemical-mechanical polishing |
JP3676030B2 (en) * | 1997-04-10 | 2005-07-27 | 株式会社東芝 | Polishing pad dressing method and semiconductor device manufacturing method |
JP3231659B2 (en) * | 1997-04-28 | 2001-11-26 | 日本電気株式会社 | Automatic polishing equipment |
US5885147A (en) * | 1997-05-12 | 1999-03-23 | Integrated Process Equipment Corp. | Apparatus for conditioning polishing pads |
US6045435A (en) * | 1997-08-04 | 2000-04-04 | Motorola, Inc. | Low selectivity chemical mechanical polishing (CMP) process for use on integrated circuit metal interconnects |
KR19990074921A (en) * | 1998-03-16 | 1999-10-05 | 윤종용 | Polishing Pad Conditioner in Wafer Polishing Equipment |
US6354915B1 (en) * | 1999-01-21 | 2002-03-12 | Rodel Holdings Inc. | Polishing pads and methods relating thereto |
US6273797B1 (en) * | 1999-11-19 | 2001-08-14 | International Business Machines Corporation | In-situ automated CMP wedge conditioner |
US6419553B2 (en) * | 2000-01-04 | 2002-07-16 | Rodel Holdings, Inc. | Methods for break-in and conditioning a fixed abrasive polishing pad |
US6800020B1 (en) * | 2000-10-02 | 2004-10-05 | Lam Research Corporation | Web-style pad conditioning system and methods for implementing the same |
US6514127B2 (en) * | 2000-11-30 | 2003-02-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | Conditioner set for chemical-mechanical polishing station |
US20020100743A1 (en) * | 2000-12-05 | 2002-08-01 | Bonner Benjamin A. | Multi-step polish process to control uniformity when using a selective slurry on patterned wafers |
US6409580B1 (en) * | 2001-03-26 | 2002-06-25 | Speedfam-Ipec Corporation | Rigid polishing pad conditioner for chemical mechanical polishing tool |
TW492065B (en) * | 2001-07-20 | 2002-06-21 | United Microelectronics Corp | Structure of polishing pad conditioner and method of use |
US7037184B2 (en) * | 2003-01-22 | 2006-05-02 | Raytech Innovation Solutions, Llc | Polishing pad for use in chemical-mechanical planarization of semiconductor wafers and method of making same |
US6852020B2 (en) * | 2003-01-22 | 2005-02-08 | Raytech Innovative Solutions, Inc. | Polishing pad for use in chemical—mechanical planarization of semiconductor wafers and method of making same |
-
2003
- 2003-03-28 US US10/402,578 patent/US20040192178A1/en not_active Abandoned
- 2003-12-15 KR KR1020057018192A patent/KR100818591B1/en not_active IP Right Cessation
- 2003-12-15 EP EP03816708A patent/EP1641596A1/en not_active Withdrawn
- 2003-12-15 CN CNA2003801007898A patent/CN1694783A/en active Pending
- 2003-12-15 WO PCT/US2003/039969 patent/WO2004094106A1/en not_active Application Discontinuation
- 2003-12-15 AU AU2003297156A patent/AU2003297156A1/en not_active Abandoned
- 2003-12-18 TW TW092136019A patent/TWI286502B/en not_active IP Right Cessation
- 2003-12-18 TW TW095113436A patent/TWI303406B/en active
-
2006
- 2006-04-12 US US11/402,449 patent/US20060183410A1/en not_active Abandoned
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020137436A1 (en) * | 2000-01-28 | 2002-09-26 | Lam Research Corporation | System and method for controlled polishing and planarization of semiconductor wafers |
US20010029155A1 (en) * | 2000-01-31 | 2001-10-11 | Applied Materials, Inc. | Multi-step conditioning process |
Cited By (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9868100B2 (en) | 1997-04-04 | 2018-01-16 | Chien-Min Sung | Brazed diamond tools and methods for making the same |
US9221154B2 (en) | 1997-04-04 | 2015-12-29 | Chien-Min Sung | Diamond tools and methods for making the same |
US9199357B2 (en) | 1997-04-04 | 2015-12-01 | Chien-Min Sung | Brazed diamond tools and methods for making the same |
US9409280B2 (en) | 1997-04-04 | 2016-08-09 | Chien-Min Sung | Brazed diamond tools and methods for making the same |
US9463552B2 (en) | 1997-04-04 | 2016-10-11 | Chien-Min Sung | Superbrasvie tools containing uniformly leveled superabrasive particles and associated methods |
US9238207B2 (en) | 1997-04-04 | 2016-01-19 | Chien-Min Sung | Brazed diamond tools and methods for making the same |
US7658666B2 (en) | 2004-08-24 | 2010-02-09 | Chien-Min Sung | Superhard cutters and associated methods |
US7762872B2 (en) | 2004-08-24 | 2010-07-27 | Chien-Min Sung | Superhard cutters and associated methods |
US9724802B2 (en) | 2005-05-16 | 2017-08-08 | Chien-Min Sung | CMP pad dressers having leveled tips and associated methods |
US9067301B2 (en) | 2005-05-16 | 2015-06-30 | Chien-Min Sung | CMP pad dressers with hybridized abrasive surface and related methods |
US8414362B2 (en) | 2005-09-09 | 2013-04-09 | Chien-Min Sung | Methods of bonding superabrasive particles in an organic matrix |
US9902040B2 (en) | 2005-09-09 | 2018-02-27 | Chien-Min Sung | Methods of bonding superabrasive particles in an organic matrix |
US7651386B2 (en) | 2005-09-09 | 2010-01-26 | Chien-Min Sung | Methods of bonding superabrasive particles in an organic matrix |
US7901272B2 (en) | 2005-09-09 | 2011-03-08 | Chien-Min Sung | Methods of bonding superabrasive particles in an organic matrix |
US7690971B2 (en) | 2005-09-09 | 2010-04-06 | Chien-Min Sung | Methods of bonding superabrasive particles in an organic matrix |
US8393934B2 (en) | 2006-11-16 | 2013-03-12 | Chien-Min Sung | CMP pad dressers with hybridized abrasive surface and related methods |
US8398466B2 (en) | 2006-11-16 | 2013-03-19 | Chien-Min Sung | CMP pad conditioners with mosaic abrasive segments and associated methods |
US9011563B2 (en) | 2007-12-06 | 2015-04-21 | Chien-Min Sung | Methods for orienting superabrasive particles on a surface and associated tools |
US9475169B2 (en) | 2009-09-29 | 2016-10-25 | Chien-Min Sung | System for evaluating and/or improving performance of a CMP pad dresser |
US8777699B2 (en) | 2010-09-21 | 2014-07-15 | Ritedia Corporation | Superabrasive tools having substantially leveled particle tips and associated methods |
US9138862B2 (en) | 2011-05-23 | 2015-09-22 | Chien-Min Sung | CMP pad dresser having leveled tips and associated methods |
US8974270B2 (en) | 2011-05-23 | 2015-03-10 | Chien-Min Sung | CMP pad dresser having leveled tips and associated methods |
Also Published As
Publication number | Publication date |
---|---|
US20040192178A1 (en) | 2004-09-30 |
KR20050112113A (en) | 2005-11-29 |
TW200705376A (en) | 2007-02-01 |
TWI303406B (en) | 2008-11-21 |
CN1694783A (en) | 2005-11-09 |
TWI286502B (en) | 2007-09-11 |
EP1641596A1 (en) | 2006-04-05 |
TW200418612A (en) | 2004-10-01 |
KR100818591B1 (en) | 2008-04-02 |
AU2003297156A1 (en) | 2004-11-19 |
US20060183410A1 (en) | 2006-08-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US20060183410A1 (en) | Diamond conditioning of soft chemical mechanical planarization/polishing (CMP) polishing pads | |
US5782675A (en) | Apparatus and method for refurbishing fixed-abrasive polishing pads used in chemical-mechanical planarization of semiconductor wafers | |
US5725417A (en) | Method and apparatus for conditioning polishing pads used in mechanical and chemical-mechanical planarization of substrates | |
US8485863B2 (en) | Polishing liquids for activating and/or conditioning fixed abrasive polishing pads, and associated systems and methods | |
KR100882045B1 (en) | Polishing apparatus with grooved subpad | |
US5595527A (en) | Application of semiconductor IC fabrication techniques to the manufacturing of a conditioning head for pad conditioning during chemical-mechanical polish | |
US6783436B1 (en) | Polishing pad with optimized grooves and method of forming same | |
US5245796A (en) | Slurry polisher using ultrasonic agitation | |
TW471994B (en) | System and method for controlled polishing and planarization of semiconductor wafers | |
US5941762A (en) | Method and apparatus for improved conditioning of polishing pads | |
US9375825B2 (en) | Polishing pad conditioning system including suction | |
US6179693B1 (en) | In-situ/self-propelled polishing pad conditioner and cleaner | |
JP2001062701A (en) | Preconditioning of fixed abrasive member | |
JP2002512894A (en) | Chemical mechanical polishing using multiple polishing pads | |
KR19980086907A (en) | Polishing pad conditioner | |
JPH10286756A (en) | Dressing method of polishing pad, polishing device, and manufacture of semiconductor device | |
WO2002076674A2 (en) | Rigid polishing pad conditioner for chemical mechanical polishing tool | |
US6394886B1 (en) | Conformal disk holder for CMP pad conditioner | |
US7105446B2 (en) | Apparatus for pre-conditioning CMP polishing pad | |
US20140113533A1 (en) | Damper for polishing pad conditioner | |
US7033253B2 (en) | Polishing pad conditioners having abrasives and brush elements, and associated systems and methods | |
US6390902B1 (en) | Multi-conditioner arrangement of a CMP system | |
US6234883B1 (en) | Method and apparatus for concurrent pad conditioning and wafer buff in chemical mechanical polishing | |
US6752698B1 (en) | Method and apparatus for conditioning fixed-abrasive polishing pads | |
JP3528501B2 (en) | Semiconductor manufacturing method |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AK | Designated states |
Kind code of ref document: A1 Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SY TJ TM TN TR TT TZ UA UG UZ VC VN YU ZA ZM ZW |
|
AL | Designated countries for regional patents |
Kind code of ref document: A1 Designated state(s): BW GH GM KE LS MW MZ SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LU MC NL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
WWE | Wipo information: entry into national phase |
Ref document number: 20038A07898 Country of ref document: CN |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2003816708 Country of ref document: EP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 1020057018192 Country of ref document: KR |
|
WWP | Wipo information: published in national office |
Ref document number: 1020057018192 Country of ref document: KR |
|
WWP | Wipo information: published in national office |
Ref document number: 2003816708 Country of ref document: EP |
|
NENP | Non-entry into the national phase |
Ref country code: JP |
|
WWW | Wipo information: withdrawn in national office |
Country of ref document: JP |