TWI285440B - High brightness gallium nitride-based light emitting diode with transparent conducting oxide spreading layer - Google Patents
High brightness gallium nitride-based light emitting diode with transparent conducting oxide spreading layer Download PDFInfo
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- TWI285440B TWI285440B TW093121290A TW93121290A TWI285440B TW I285440 B TWI285440 B TW I285440B TW 093121290 A TW093121290 A TW 093121290A TW 93121290 A TW93121290 A TW 93121290A TW I285440 B TWI285440 B TW I285440B
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- 229910002601 GaN Inorganic materials 0.000 title claims description 110
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims description 105
- 238000003892 spreading Methods 0.000 title abstract description 4
- XOLBLPGZBRYERU-UHFFFAOYSA-N SnO2 Inorganic materials O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims abstract description 31
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 35
- 229910052733 gallium Inorganic materials 0.000 claims description 35
- 239000000758 substrate Substances 0.000 claims description 35
- 239000000463 material Substances 0.000 claims description 12
- 229910052738 indium Inorganic materials 0.000 claims description 7
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 7
- 229910026161 MgAl2O4 Inorganic materials 0.000 claims description 5
- 229910052593 corundum Inorganic materials 0.000 claims description 5
- 229910052596 spinel Inorganic materials 0.000 claims description 5
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 claims description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 3
- 229910002704 AlGaN Inorganic materials 0.000 claims 3
- 229910005540 GaP Inorganic materials 0.000 claims 1
- 150000004767 nitrides Chemical class 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 5
- 239000010409 thin film Substances 0.000 abstract 2
- 230000003287 optical effect Effects 0.000 abstract 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 14
- 239000010931 gold Substances 0.000 description 9
- 150000001875 compounds Chemical class 0.000 description 8
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 7
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 7
- 238000002834 transmittance Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- JLVVSXFLKOJNIY-UHFFFAOYSA-N Magnesium ion Chemical compound [Mg+2] JLVVSXFLKOJNIY-UHFFFAOYSA-N 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- PTFCDOFLOPIGGS-UHFFFAOYSA-N Zinc dication Chemical compound [Zn+2] PTFCDOFLOPIGGS-UHFFFAOYSA-N 0.000 description 1
- HDEGYBJYTLJXQX-UHFFFAOYSA-N [O-2].[In+3].[La+3].[O-2].[O-2] Chemical compound [O-2].[In+3].[La+3].[O-2].[O-2] HDEGYBJYTLJXQX-UHFFFAOYSA-N 0.000 description 1
- DOMZRDNTLBCBQJ-UHFFFAOYSA-N [Sn]=O.[In].[Yb] Chemical compound [Sn]=O.[In].[Yb] DOMZRDNTLBCBQJ-UHFFFAOYSA-N 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- NNLOHLDVJGPUFR-UHFFFAOYSA-L calcium;3,4,5,6-tetrahydroxy-2-oxohexanoate Chemical compound [Ca+2].OCC(O)C(O)C(O)C(=O)C([O-])=O.OCC(O)C(O)C(O)C(=O)C([O-])=O NNLOHLDVJGPUFR-UHFFFAOYSA-L 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 210000003298 dental enamel Anatomy 0.000 description 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 229910001195 gallium oxide Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 229910001425 magnesium ion Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000002703 mutagenesis Methods 0.000 description 1
- 231100000350 mutagenesis Toxicity 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 1
- 238000012421 spiking Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 235000018553 tannin Nutrition 0.000 description 1
- 229920001864 tannin Polymers 0.000 description 1
- 239000001648 tannin Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
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- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
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- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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Description
1285440 玖、發明說明: 【發明所屬之技術領域】 本發明係有關一種氮化鎵系發光二極體,尤指一種以新 的AlGalnSnO透明導電氧化層取代習知技藝的Ni/Au層,俾 以提昇亮度及導電率特性。 【先前技術】 按,ΠΙ-V族氧化物材料為所有ΠΙ-V族材料中具有較高 之直接能隙者;但,由於P型氮化鎵半導體化合物之載子濃度, 在經過熱處理之後,大都小於lxl018cm·3,其電阻系數之最佳 值約只有lQcm左右,由於導電性不佳,因此,從電極流下的 電流無法有效分佈於整個晶粒,以致形成電流擁塞現象,因 而影響其發光效率。 直到1993年年底,日本日亞化學工業宣佈成功地作出 第一個以氮化鎵為主要材料的發光二極體,其使用金屬薄膜 作為P電極之後,日亞化工又發表更佳的金屬薄膜係由金 (Au)及鎳(Ni)所組成。其中,鎳係直接形成於P型半導體層, 然後金再形成鎳層之上,經過熱處理之後,形成了一 Ni/Au合 金複合層結構,使其成為皿-V族P型氮化鎵系半導體化合 物的光導層及歐姆接觸層。 在先前技藝中,如第一圖所示,係日亞化工揭示於美國 專利第6,093,965號之結構,其氮化鎵發光二極體,包含有一 1285440 藍寶石基體(Sapphire substrate)(116),一 η 型氮化鎵(GaN)束 缚層(15),一 η型Ti/Al電極(14),一氮化銦鎵(inGaN)發光層 (13),一 p型氮化鎵(GaN)束缚層(12),一由Ni/Au薄膜(11A) 所構成的光導層,以及一 p型Ni/Au電極(1〇)。 由於,該Ni/Au薄膜(11A)厚度約只有數百個 Angstroms(埃)當作電流分佈層,以便有效分散電流於整個 晶粒;然而,此一 Ni/Au薄膜(11A)的穿透率約20〜40%,因此, 大部分來自發光層(13)所發出的光,都被此一電流分佈層所 吸收,使传其發光效率降低。 為此,在習知技藝中,氧化銦錫(Indium Tin Oxide,ITO) 被使用來取代前揭之Ni/Au薄層,作為光導層,如第二圖所示, 其結構包括有一藍寶石基體(116),一 η型GaN束缚層(15), 一 n型氮化鋁鎵(AlGaN)束缚層(15A),一 η型電極(14),一
InGaN發光層(13),一 Ρ型GaN束缚層(12),一 Ρ型高載子濃 度接觸層(117),一氧化銦鍚(ITO)光導層(11C),及一 P型電極 (10)。 此類型專利見諸於晶元光電(Epistar Co)之氧化銦鎵發 光二極體結構中。由於氮化鎵之載子濃度一般都低於lx 1 018 _ 3 ^ ,因此,與金屬或是氧化銦錫之間無法形成良好接觸, 緣是,晶元光電乃將氮化鎵之載子的濃度控制在5xl〇i8cm_3 以上、厚度控制在500埃以下。其使用之方法係該氮化鎵 1285440 (GaN)接觸層(117),可以利用鋅擴散(Zn diffusi〇n)、鎂擴散 (Mg Diffusion)、鋅離子佈值(zn i〇n implantati〇n)或是鎂離 子佈值等方式,於其表面形成極薄而且載子濃度極高的接觸 層(117),當ITO光導層(11C)以錢鑛(sputtering)或是電子鎗 蒸鍍(E-gun evaporation)形成於其上時,可以增進發光效率, 晶元光電使用此一方法後,整體的穿透率可以維持在50〜 70%以上。然而,該ITO膜層内填入之載子是由錫(Tin dopant) 及空給子(donors)氧化離子,使得濕氣極易散佈至IT0膜層 並破壞ΙΤΟ與GaN接觸層之中間表面,使得歐姆接觸電阻將 增大;是以,在這種高濕度之情況下,將使LED之穩定度及可 靠度降低。 所以,在GaN系發光裝置的先前技術中,尚未揭示有光 導層同時具有良好效率及可靠度。 【發明内容】 本發明主要目的,係在提供一種生產高效率氮化鎵系發 光裝置的方法,其包含一新的Al2〇3-Ga2〇3-In2〇3-Sn〇2系統 透明導電氧化層(TCO),係為一非結晶性(Amorphous)或微結 晶性(Nanocrystalline)的薄膜,此一薄膜具有較佳導電性,比 先前揭示之ITO膜層,約高出十倍的導電效果。 本發明另一目的,在提供一富含鎵相(Gallium rich phase)之氮化鎵系接觸層,據以降低皿-ν族氮化鎵系半導體 1285440 發光裝置與新的Al2〇3-Ga2〇3_In2〇3-Sn02透明導電氧化層 之間的接觸電阻,且此一接觸層可以是η型、p型或是未摻 雜。 本發明再一目的,則在提供一種中介層(Intermediate layer)形成於束缚層與接觸層之間,其係選自包括 AlGaInN,InGaN,及InN任一組群材料所構成,其材料帶隙能 量(Band-gap energy)需低於GaN束缚層,具有降低束缚層與 接觸層之間電的尖峰效應(Electrical spiking effect)。 為達上揭目的,本發明所揭示之GaN發光二極體,其具 體構成包含: 一透光絕緣基體; 一第一導電型氮化鎵,形成於該透光絕緣基體之上,作 為第一下束缚層; 一氮化銦鎵發光層,形成於該第一下束缚層之上; 一第二導電型氮化鎵,形成於該發光層之上,作為第二 上束缚層; 一富含鎵相(Gallium rich phase)之氮化鎵系接觸層,其 厚度在5〜1000Angstroms(埃)之間,形成於該第二上束缚層 之上; 一 AlGalnSnO系透明導電氧化層(TC0),其厚度在 5 Angstroms(埃)以上,形成於該接觸層之上,作為光導層 1285440 (Light transmitting layer); 一第一電極,形成於該第一導電型氮化鎵裸露區域之上; 以及 一第二電極,形成於該光導層之上。 依據前揭構成,該透光絕緣基體得以一導電型基體取代, 且將第一電極形成於該導電型基體底緣。 依據前揭構成,該AlGalnSnO光導層之上,更可形成一 透明導電氧化窗口層。 藉此上述技術手段,本發明高亮度氮化鎵系發光二極體 得以實施生產,該Al2〇3-Ga2〇3-In2〇3-Sn〇2系統光導層能與 p型GaN束缚層形成歐姆接觸,再者,形成於該光導層之上的 窗口層,則進一步可增進發光及電流分散效果。 又,該富含鎵相之接觸層,使其與Al203-Ga203-Sn02系 統光導層之間形成穩固接觸面(Interface),該接觸面可降低 歐姆接觸電阻,增進發光效率,並可增加可靠度。 【實施方式】 首先提供一相同厚度之氧化銦錫(ITO)、 Gai.6ln6.4Sn2〇i6、Ga2.8ln5.2Sn2〇i6 以及 Al〇.iGa2.7ln5.2Sn2〇i6 透明導電氧化層之樣本。Al2〇3-Ga2〇3-In2〇3-Sn〇2系統樣本 的顏色由淡藍綠色(含微量的鋁質)至淡綠色(含高量的鎵質) 以至綠色(含低量的鎵質)。複晶之氧化銦錫(ITO)透明導膜 1285440 的顏色亦為綠色,但比任一 Al2〇3-Ga2〇3-In2〇3-Sn〇2糸統樣 本的顏色較為深色。 第九圖為AlxGa3_x_yIn5+ySn2_z016_2z化合物的透光度,在 波長(λ)大於400nm時,微微地優於氧化銦錫(ITO)透明導 膜。此外,AlxGa3-x_yIn5+ySn2_z016_2zt合物在紫外線區域具 有較低的吸收性。本發明顯示,藉由增加鎵含量或是輕微 的銘含量至AlxGahx-ylns+ySnkOi6·。化合物中,此可達到於 藍-綠區域中較高的透光率。 透明導電氧化層的透射特性可藉由於下波長範圍之材 質帶隙來決定,其可表示為:
Xbg=hc/Eg 而於上波長則藉由帶電粒子密度來決定,其可表示為· λρ=2π[ηιο2/4π(Ν/ν)β2]1/2 此外,材質缺陷密度和相位關係亦可決定透明導電氧 化層的透光特性。在本發明的AlxGa3_x yIn5+ySn2 z〇w2z化合 物中,當IS含量增加至X>1時,AlxGa3”1115+咖2為七 化合物的透光性就會大大的降低。 由本發明的結果得知,A1xGa3Wn5+ySn2-z〇16七化合 物,其中χ>1時,薄層電阻增加,帶電粒子含量降低,且 當AlxGa3_x.yIn5+ySn2.z〇16七化合物中的紹質含量過高時,缺 陷密度即會增加’而單斜晶p_GalUa相位結構會藉由增加 10 1285440
AlxGa3_x_yIn5+ySn2-z016_2z化合物中的鋁質密度超過x > 1時 而受到破壞。Al203_Ga203_In203_Sn02系統的較佳實施例可 由下列公式來表示:
AlxGa3-x-yIn5+y Sn2-z〇 16-2z 其中,0<x<2, 0<y<3, 0<z<2 此外,本發明中之AlxGa3_x_yIn5+ySn2-z〇i6-2z具有一正方 形結構相位,其中,辞(Sn)結合成為一結構元件,而不是成 為像是在氧化銦錫(ITO)透明導膜内之替代性摻雜材料。藉 此’新的Al2〇3-Ga2〇3-In2〇3-Sn〇2系統相較於氧化姻錫(ITO) 透明導膜具有較佳的穩定性和可靠性。 另於本發明中之Al2〇3-Ga2〇3-In2〇3-Sn〇2糸統之光導 層必需與P型氮化鎵系之束缚層相連接,並於200°C或更高 的溫度予以韌化。藉此仍會產生衝擊式的阻擋,並於 Al2〇3-Ga2〇3-In2〇3-Sn〇2系統和p型氮化錄糸之束缚層之間 形成一不良的電阻性接觸。第十圖係為與本發明P型氮化 蘇糸之束缚層接觸之Al2〇3_Ga2〇3-In2〇3-Sn〇2糸統光導層 之電流-電壓特徵圖。 另,本發明在考慮Al203-Ga203-In203-Sn02系統光導層 的導電率時,其厚度必需大於5埃。 本發明為了將具有富含鎵相的的氮化鎵系接觸層設置 11 1285440 於Al2〇3-Ga2〇3_In2〇3-Sn〇2糸統和p型氮化嫁糸之束缚層之 間,並於200°C或更高的溫度予以韌化,富含鎵相的的氮化 鎵系接觸層之鎵係部分擴散於AlxGa3_x_yIn5+ySn2_z016_2z的 光導層内,並且形成一較佳的高嫁含量之 AlxGa3_x_yIn5+ySn2_z016_2z界面,並與一氮化鎵系接觸層形成 一良好的電阻性接觸,再者,氮化鎵系接觸層的厚度為 5-1000 埃。第十一圖係為設置於 Al203_Ga203_In203-Sn02 系統和p型氮化鎵系之束缚層之間之具有富含鎵相的的氮 化鎵系接觸層的電流-電壓特徵圖。 具有富含鎵相的的氮化鎵系接觸層相較於一 p型氮化 鎵系之束缚層,其具有高度不規律結構,其中,一電流係 穿越一 p型氮化鎵系之束缚層和一氮化鎵系接觸層,而該 電流尖峰係出現於該束缚層和該接觸層之間,而該氮化銦 系中介層的厚度為5_500埃。 第七圖係顯示一氮化銦系中介層(17B),其設置於p型 束缚層(12)和氮化鎵系接觸層(17A)之間,而氮化銦系中介 層(17B)得為 AlGalnN,AlInN,InGaN 或是 InN 任一組群材 料所組成以及得為p型、η型或非摻雜者。而氮化銦系中介 層(17Β)之材料帶隙能量必需低於ρ型氮化鎵系束缚層(12)。 第十二圖係為設置於ρ型氮化鎵系束缚層(12)和氮化 鎵系接觸層(17Α)之間之氮化銦系中介層(17Β)的低材料帶 12 1285440 隙能量的電流-電壓特徵圖,其可產生一降低電性尖峰效果 的功能,其電流穿越一 P型氮化鎵系之束缚層和一氮化鎵 系接觸層。 第三圖係為依據本發明之透光絕緣基體(116),例如是 Al2〇3,LiGa〇2,LiAl〇2 以及 MgAl204 基體上之 Al203-Ga2〇3-In203-Sn02系統的光導層(11B)以及富含鎵相 之氮化鎵系接觸層(17A)所設計之發光裝置的實施例剖視 圖。其結構具有: 一作為第一下束缚層(15)之η型GaN直接設置於透光絶緣 基體(116), 一 InGaN發光層(13)直接設置於第一下束缚層(15)之上, 一作為第二上束缚層(12)之p型GaN直接設置於該InGaN 發光層(13)之上, 一富含鎵相之氮化鎵系接觸層(17A),形成為於該第二上束 缚層(12)之上, 一形成於第一下束縛層(15)之半裸露區域上之η型電極(14) 以及 一形成於Al2〇3_Ga2〇3-In2〇3-Sn〇2系統之光導層(11Β)頂端 之p型電極(10)。 第四圖係為依據本發明之第一導電型透光導電基體 (216),例如是 SiC、GaN、AlN 基體上之 Al203-Ga2〇3-In203-Sn02 13 1285440 系統的光導層(11B)以及富含鎵相之氮化鎵系接觸層(17a) 所設計之發光裝置的實施例剖視圖。本實施例與第三圖所 示之實施例不同之處在於一設置於透光導電基體(216)下方 之η型電極(14)。 第五圖係為依據本發明之矽質或ZnSe基體(316)上之 Al203-Ga203-In2〇3_sn〇2系統的光導層(11B)以及富含鎵相 之氮化鎵系接觸層(17Α)所設計之發光裝置的實施例圖。 第六圖係為依據本發明之吸光導電基體(416),例如是 GaAs、GaP 基體上之 Al2〇3-Ga203_In203-Sn02 系統的光導 層(11B)以及富含鎵相之氮化鎵系接觸層(17A)所設計之發 光裝置的實施例剖視圖。 第七圖係為依據本發明之Al2〇3-Ga2〇3-In2〇3-Sn〇2糸 統的光導層(11B)、富含鎵相之氮化鎵系接觸層(17A)以及氮 化銦系中介層(17B)所設計之發光裝置的實施例剖視圖。 第八圖係為依據本發明之Al2〇3-Ga2〇3-In2〇3-Sn〇2糸 統的光導層(11B)、富含鎵相之氮化鎵系接觸層(17A)以及透 明導電氧化窗口層(11D),例如是Sn02, ln203, ITO, Cd2Sn04, ZnO, CuA102, CuGa02, SrCu202, NiO, AgCo02 等等所設計 之發光裝置的實施例剖視圖,其可與光導電極接觸,並用 來改善光效率和電流擴散,另亦可顧及至透明導電氧化物 之光效率和電流擴散以及其厚度必需大於5埃。 14 1285440 綜上所述,本發明所揭示之技術手段,確具「新穎性」、 「進步性」及「可供產業利用」等發明專利要件,祈請鈞 局惠賜專利’以勵發明’無任德感。 惟,上述所揭露之圖<、說明,僅為本發明之較佳實 施例,大凡熟悉此項技藝人士 ’依本案精神範嘴所作之修 飾或等效變化,仍應包括本案申請專利範圍内。 15 1285440 【圖式簡單說明】 第一圖係為一習知發光裝置,其具有一與P型氮化鎵系束 缚層(12)接觸之金屬光導電極之剖視圖; 第二圖係為一習知發光裝置,其具有一與p型氮化鎵系束 缚層(12)接觸之氧化銦錫(ΓΓΟ)光導層之剖視圖; 第三圖係為一本發明之透光絕緣基體(116),例如是Al2〇3, LiGa02, LiA102 以及 MgAl204 基體上之 Al203-Ga203-ln2〇3-Sn〇2 系統的光導層(11B)以及富含鎵相之氮化鎵系接觸層(17A)所設 計之發光裝置的實施例剖視圖; 第四圖係為依據本發明之透光導電基體(216),例如是
SiC、GaN、A1N 基體上之 Al203-Ga203-In203-Sn02 系統的光導 層(11B)以及富含鎵相之氮化鎵系接觸層(17A)所設計之發光裝 置的實施例剖視圖; 第五圖係為依據本發明之矽質或ZnSe基體(316)上之 Al203-Ga203-In203-Sn02系統的光導層(11B)以及富含鎵相之氮 化鎵系接觸層(17A)所設計之發光裝置的實施例剖視圖; 第六圖係為依據本發明之吸光導電基體(416) ’例如疋 GaAs、GaP 基體上之 Al203-Ga203_ln203-Sn02 系統的光導層(11B) 以及富含鎵相之氮化鎵系接觸層(17A)所設計之發光裝置的實 施例剖視圖; 第七圖係為依據本發明之Al203-Ga203-In2〇3-Sn〇2系統的 光導層(11B)、富含鎵相之氮化鎵系接觸層(17A)以及氮化銦系 16 1285440 中介層(17 B )所設計之發光裝置的實施例剖視圖; 第八圖係為依據本發明之Al203-Ga203_ln203-Sn02系統的 光導層(11B)、富含鎵相之氮化鎵系接觸層(17A)以及透明導電 氧化窗口層(11D),所設計之發光裝置的實施例剖視圖; 第九圖係為比較氧化銦錫(ITO)、Gai.6ln6.4Sn2016、 Ga2.8In5.2Sn2016 以及 Al(uGa2.7In5.2Sn2016 四者之透射系數之關 係圖; 第十圖係為與本發明P型氮化鎵系之束缚層接觸之 Al2〇3-Ga203-In203-Sn〇2系統光導層之電流-電壓特徵圖,其中 X軸一部分為0.5V,而Y轴一部分為0.2mA; 第十"--圖係為設置於Αΐ2〇3"Ό^2〇3-Ιϋ2〇3-8π〇2系統和p型 氮化鎵系之束缚層之間之具有富含鎵相的的氮化鎵系接觸層的 電流-電壓特徵圖,其中X軸一部分為0.5V,而Υ軸一部分為 0.2mA;以及 第十·一圖係為设置於P型鼠化錄系束缚層(12)和氮化鎵李 接觸層(17A)之間之氮化銦系中介層(17B)的低材料帶隙能量的 電流_電壓特徵圖,其中X轴一部分為〇·5ν,而Y軸一部分為 0.2mA 〇 17 1285440 【圖號說明】 (10) p型電極 (11B) Al203-Ga2〇3-In203-Sn02 系統之光導層 (12) 第二上束縛層 (13) 發光層 (14) η型電極 (15) 第一下束缚層 (17Α)富含鎵相之氮化鎵系接觸層 (116)透光絕緣基體 (216)透光導電基體 (316)矽質或ZnSe基體 (416)吸光導電基體 (11D)透明導電氧化窗口層 18
Claims (1)
1285440 拾、申請專利範圍: 1. 一種高亮度氮化鎵系發光二極體,包含: 一透光絕緣基體; 一第一導電型氮化鎵,形成於該透光絕緣基體之上,作 為第一下束缚層; 一氮化銦鎵發光層,形成於該第一下束缚層之上; 一第二導電型氮化鎵,形成於該發光層之上,作為第二 上束缚層; 一富含鎵相(Gallium rich phase)之氮化鎵系接觸層,其 厚度在5〜lOOOAngstroms(埃)之間,形成於該第二上束缚層 之上; 一 AlGalnSnO系統透明導電氧化層(TCO),其厚度在 5 Angstroms(埃)以上,形成於該接觸層之上,作為光導層 (Light transmitting layer); 一第一電極,形成於該第一導電型氮化鎵裸露區域之上; 以及 一第二電極,形成於該光導層之上。 2. 如申請專利範圍第1項所述之高亮度氮化鎵系發光 二極體,其中,該透明導電氧化層(TCO)之組成為: AlxGa3-x-yIn5+ySn2-z〇i6-2z ’ 其中 0<x<2, 0<y<3, 0<z<2。 19 1285440 3.如申清專利乾圍第!項所述之高亮度氮化鎵系發光 一極體,其中,該透光絕緣基體係選自包括Al2〇3,LiGa〇2, LiA1〇2 及 MgAl2〇4 任一組群#__。 4·如申凊專利範圍第!項所述之高亮度氮化鎵系發光 一極體,其中,該氮化鎵系接觸層係選自包括A1GaN, GaN, 及InGaN任一組群材料所構成。 5·—種高亮度氮化鎵系發光二極體,包含·· 一第一導電型基體; 一第一導電型氮化鎵,形成於該第一導電型基體之上, 作為第一下束缚層; 一氮化銦鎵發光層,形成於該第一下束缚層之上; 一第二導電型氮化鎵,形成於該發光層之上,作為第二上 束缚層; 一富含鎵相(Gallium rich phase)之氮化鎵系接觸層,其 厚度在5〜1 OOOAngstroms(埃)之間,形成於該第二上束缚層 之上; 一 AlGalnSnO系統透明導電氧化層(TCO),其厚度在 5 Angstroms(埃)以上,形成於該接觸層之上,作為光導層 (Light transmitting layer); 一第一電極,形成於該第一導電型基體之底面;以及 20 1285440 一第二電極,形成於該光導層之上。 6-如申請專利範圍第5項所述之高亮度氮化鎵系發光 二極體,其中,該透明導電氧化層(TCO)之組成為: AlxGa3-x-yIti5+ySn2-z〇i6-2z ’ 其中 0<x<2,0<y<3,0<z<2。 7. 如申請專利範圍第5項所述之高亮度氮化鎵系發光 二極體,其中,該第一導電型基體係選自包括SiC,Si,ZnSe, GaAs,GaP,GaN及A1N任一組群材料所構成。 8. 如申請專利範圍第5項所述之高亮度氮化鎵系發光 二極體,其中,該氮化鎵系接觸層係選自包括AlGaN,GaN,及 InGaN任一組群材料所構成。 9. 一種高亮度氮化鎵系發光二極體,包含: 一透光絕緣基體; 一第一導電型氮化鎵,形成於該透光絕緣基體之上,作 為第一下束缚層; 一氮化銦鎵發光層,形成於該第一下束缚層之上; 一第二導電型氮化鎵,形成於該發光層之上,作為第二 上束缚層; 一 AlGalnN 系中介層(Intermediate layer),形成於該第 21 1285440 二上束缚層之上,其材料帶隙能量(Band-gap energy)需低於 第二導電型氮化鎵,且厚度在5〜500 Angstroms(埃)之間; 一富含鎵相(Gallium rich phase)之氮化鎵系接觸層,其 厚度在5〜lOOOAngstroms(埃)之間,形成於該中介層之上; 一 AlGalnSnO系統透明導電氧化層(TCO),其厚度在 5 Angstroms(埃)以上,形成於該接觸層之上,作為光導層 (Light transmitting layer); 一第一電極,形成於該第一導電型氮化鎵裸露區域之上; 以及 一第二電極,形成於該光導層之上。 10.如申請專利範圍第9項所述之高亮度氮化鎵系發光 二極體,其中,該透明導電氧化層(TCO)之組成為: AlxGa3 -x-yIn5+ySn2-z〇i6-2z 5 其中 0<x<2, 〇<y<3, 0<z<2。 11 ·如申請專利範圍第9項所述之高亮度氮化鎵系發光 二極體,其中,該透光絕緣基體係選自包括Al2〇3,LiGa02, LiAl〇2及MgAl2〇4任一組群材料所構成。 12·如申請專利範圍第9項所述之高亮度氮化鎵系發光 二極體,其中,該氮化鎵系接觸層係選自包括AlGaN,GaN,及 InGaN任一組群材料所構成。 22 1285440 13. 如申請專利範圍第9項所述之高亮度氮化鎵系發光 二極體,其中,該中介層係選自包括AlGalnN,InGaN,及InN 任一組群材料所構成。 14. 一種高亮度氮化鎵系發光二極體,包含: 一透光絕緣基體; 一第一導電型氮化鎵,形成於該透光絕緣基體之上,作 為第一下束缚層; 一氮化銦嫁發光層,形成於該第一下束缚層之上; 一第二導電型氮化鎵,形成於該發光層之上,作為第二 上束缚層; 一富含鎵相(Gallium rich phase)之氮化鎵系接觸層,其 厚度在5〜lOOOAngstroms(埃)之間,形成於該第二上束缚層 之上; 一 AlGalnSnO系統透明導電氧化層(TCO),其厚度在 5 Angstroms(埃)以上,形成於該接觸層之上,作為光導層 (Light transmitting layer); 一透明導電氧化窗口層,係形成於該光導層之上; 一第一電極,形成於該第一導電型氮化鎵露出區域之上; 以及 一第二電極,形成於該透明導電氧化窗口層之上。 23 1285440 15. 如申請專利範圍第14項所述之高亮度氮化鎵系發 光二極體,其中,該透明導電氧化層(TCO)之組成為: AlxGa3-x-yIn5+ySn2-z〇i6-2z ’ 其中 0<x<2, 0<y<3, 0<z<2 ° 16. 如申請專利範圍第14項所述之高亮度氮化鎵系發 光二極體,其中,該透光絕緣基體係選自包括Al2〇3, LiGa02, LiA102及MgAl204任一組群材料所構成。 17. 如申請專利範圍第14項所述之高亮度氮化鎵系發 光二極體,其中,該氮化鎵系接觸層係選自包括AlGaN,GaN, 及InGaN任一組群材料所構成。 18. 如申請專利範圍第14項所述之高亮度氮化鎵系發 光二極體,其中,該透明導電氧化窗口層係選自包括Sn02, ln203,ITO,Cd2Sn〇4,ZnO,CuA102,CuCa02,SrCu02,NiO, 及AgCo02任一組群材料所構成。 24
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US (1) | US7061026B2 (zh) |
KR (1) | KR100599666B1 (zh) |
CN (1) | CN100394622C (zh) |
TW (1) | TWI285440B (zh) |
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-
2004
- 2004-04-16 US US10/825,290 patent/US7061026B2/en not_active Expired - Fee Related
- 2004-07-16 TW TW093121290A patent/TWI285440B/zh not_active IP Right Cessation
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2005
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Also Published As
Publication number | Publication date |
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US7061026B2 (en) | 2006-06-13 |
KR20060045704A (ko) | 2006-05-17 |
CN100394622C (zh) | 2008-06-11 |
TW200536146A (en) | 2005-11-01 |
CN1805162A (zh) | 2006-07-19 |
KR100599666B1 (ko) | 2006-07-12 |
US20050230701A1 (en) | 2005-10-20 |
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