TWI282801B - Slurry for polishing use - Google Patents
Slurry for polishing use Download PDFInfo
- Publication number
- TWI282801B TWI282801B TW094113391A TW94113391A TWI282801B TW I282801 B TWI282801 B TW I282801B TW 094113391 A TW094113391 A TW 094113391A TW 94113391 A TW94113391 A TW 94113391A TW I282801 B TWI282801 B TW I282801B
- Authority
- TW
- Taiwan
- Prior art keywords
- monomer
- slurry
- weight
- group
- metal
- Prior art date
Links
- 239000002002 slurry Substances 0.000 title claims abstract description 26
- 238000005498 polishing Methods 0.000 title abstract description 49
- 229910052751 metal Inorganic materials 0.000 claims abstract description 48
- 239000002184 metal Substances 0.000 claims abstract description 47
- 239000011146 organic particle Substances 0.000 claims abstract description 41
- 125000000524 functional group Chemical group 0.000 claims abstract description 13
- 229920005989 resin Polymers 0.000 claims abstract description 11
- 239000011347 resin Substances 0.000 claims abstract description 11
- 239000000178 monomer Substances 0.000 claims description 49
- 238000000227 grinding Methods 0.000 claims description 36
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical group OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 28
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 claims description 9
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 8
- 239000007800 oxidant agent Substances 0.000 claims description 8
- 125000003277 amino group Chemical group 0.000 claims description 7
- 239000000203 mixture Substances 0.000 claims description 6
- 229920000642 polymer Polymers 0.000 claims description 5
- 229910021529 ammonia Inorganic materials 0.000 claims description 4
- 150000001412 amines Chemical class 0.000 claims description 3
- 125000003055 glycidyl group Chemical group C(C1CO1)* 0.000 claims description 3
- 150000001413 amino acids Chemical class 0.000 claims description 2
- 239000008139 complexing agent Substances 0.000 claims description 2
- 230000000379 polymerizing effect Effects 0.000 claims description 2
- 125000002843 carboxylic acid group Chemical group 0.000 claims 1
- 229920001864 tannin Polymers 0.000 claims 1
- 239000001648 tannin Substances 0.000 claims 1
- 235000018553 tannin Nutrition 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 24
- 238000004519 manufacturing process Methods 0.000 abstract description 15
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 9
- 229910052802 copper Inorganic materials 0.000 abstract description 9
- 239000010949 copper Substances 0.000 abstract description 9
- 239000004065 semiconductor Substances 0.000 abstract description 5
- 230000008569 process Effects 0.000 abstract description 3
- -1 (10) (4) Chemical class 0.000 description 35
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 30
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- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 21
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- 239000000839 emulsion Substances 0.000 description 17
- QYZFTMMPKCOTAN-UHFFFAOYSA-N n-[2-(2-hydroxyethylamino)ethyl]-2-[[1-[2-(2-hydroxyethylamino)ethylamino]-2-methyl-1-oxopropan-2-yl]diazenyl]-2-methylpropanamide Chemical compound OCCNCCNC(=O)C(C)(C)N=NC(C)(C)C(=O)NCCNCCO QYZFTMMPKCOTAN-UHFFFAOYSA-N 0.000 description 14
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- USIUVYZYUHIAEV-UHFFFAOYSA-N diphenyl ether Natural products C=1C=CC=CC=1OC1=CC=CC=C1 USIUVYZYUHIAEV-UHFFFAOYSA-N 0.000 description 8
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- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 description 6
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 6
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 6
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- 239000003795 chemical substances by application Substances 0.000 description 5
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- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 5
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 4
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- 239000002585 base Substances 0.000 description 3
- 125000003739 carbamimidoyl group Chemical group C(N)(=N)* 0.000 description 3
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- ROSDSFDQCJNGOL-UHFFFAOYSA-N protonated dimethyl amine Natural products CNC ROSDSFDQCJNGOL-UHFFFAOYSA-N 0.000 description 3
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/04—Aqueous dispersions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Dispersion Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Description
^ I28280〇lpif.d〇c 九、發明說明: 【發明所屬之技術領域】 是㈣—財使祕半導體裝㈣製造由銅 來〔成之配線之形成中,不損傷銅等表面研磨,而可以 平坦化之研磨用研漿。 【先前技術】 I年來在半^r體裝置製造之配線製程中,在絕緣膜
亡使用 CMP(Chemical and Mechanical Polishing}形成進 行配線形成用之溝,藉電鑛法等埋人配線用之金屬膜,將 過剩的至屬膜去除,並平坦化包含金屬配線之絕緣膜的技 術’此乃藉使餘分散機械之研磨的方法。 在習知CMP技術中,通常是使用包含飾土(⑽⑷、鋁 土(alumma)等金屬氧化物,或石夕土(smca)等無機磨粒之研 漿。但是,此等無機磨粒的硬度較高,因此在研磨銅等硬 度較低之金屬膜時,會在金屬表面產生研磨傷之刮傷,與 在配線圖案(pattern)較密之部分的中央部,也包含基底層之 絕緣膜因不斷的研磨而形成凹形狀現象之侵蝕,造成很大 的問題。 現在’為了提升半導體的性能,絕緣膜上之1/2配線 覓疋由130nm朝90nm,更朝65nm縮小,且朝更微細化 方向發展,其研磨對象之絕緣膜表面會形成更複雜之構 造。配線寬若更微細化,則金屬表面之研磨傷因刮傷引起 斷線,另外,凹狀扭曲與侵蝕會引起配線電阻的上升與偏 差,且進一步會引起形成於上層的配線間之短路,而使半 Ί28280〇lpif.ci〇c ' /置的了罪性顯著地降低,上述皆是造成良率大幅降 低之原因。 上述刮傷的原因乃是因存在磨粒之硬度,以及磨粒之 凝聚體而料部分過度研磨之故。 另外’知飿之原因乃是因較硬之磨粒的過度研磨,以 及防止絶緣膜和金屬擴散之阻障層等的基底層之研磨選擇 性較低之故。
為了解决這些問題,在使用無機磨粒時,將磨粒做成 紹土柔軟之石夕土,在由金屬未溶出之中性至鹼性側中開 毛,研磨之研磨液。例如將矽土做為磨粒時,刮傷比鋁土 減少’但使用無機磨粒時,則無法防止產生刮傷與侵蝕, 形成根本無法解決。 、刀另外,舉例來說,最近因研磨劑中之固體成分會殘存 於,緣膜上,所以會造成整個絕緣膜層之介電常數上升的 問題。在以目前之鋁土、矽土做為磨粒之研磨劑,由於耐 ί性之特性與絕緣膜相等,所以藉熱處理無法去除,只有
猎^淨液去除。由於藉洗淨液去除,僅利用使絕緣膜溶解, 使殘存之磨粒去除之方法,所以對絕緣膜的損害會形成重 大問題。 一方面,在曰本專利第3172008號揭示著將有機高分 T化合物之粒子做為研磨磨粒的方法。在此使用的有機高 二子,由於將未具有曱基丙稀酸樹脂、聚苯乙烯樹脂等之 官,基成分做為磨粒,另外,由於未具有使金屬表面氧化 之氧化劑,所以與被研磨體之金屬膜的化學作用完全未作 6 I2828Glpif.doc ί研磨在:體裝置製造之配線製程無法得到所需要之充分 為了解決有機高分子化合物 有具有可與形成被研磨面之 者針對含 在中心部藉更加研磨轉部為凹狀拉曲, 象。為了防止此等,雖在^ Λ 成凹形狀之現 8-83780等揭示著使 ,專利早期公開之特開平 成劑之技#f /使丄+ ( Z〇triaZ〇ie)等之保護膜形 =:有::速=護r成劑由於其效果相: 【發明内容】 顯者地降低之缺點。 以顯種包讀定之錢粒子,可 本發明者們,為=及侵餘之研磨用研聚。 果,以致完成本發明。也ΐ: 行了銳意檢討的結
磨金屬反子(A)為以不具有可與被研 磨金,之官 能基之㈣綠屬與官 選自係α全單體之重量絲礎,包括聚合含有 體、具具有經基之單體、具有胺基之單 馱虱基之皁體、具有環氧丙基之單體等族 *12828#^〇〇 群^單體1〜50重量百分比及其他單體99〜5〇重量百分比 之單體組成物所得到之共聚合物 ,以促進與被研磨金屬之 反應之點看為較佳之形態。 ^ 卜树月曰(c)係包括笨乙烯系單體及/或(間)丙烯酸酯 系單體之合物,以控制與被研磨金屬之反應之點看 佳之形態。
尬1進、一步,别述研磨用研漿,更包括選自羧酸類、胺類、 土酉义類及氨之族群的錯合劑(c〇mplexing a娜〉,阳為5 〜1之範圍,以研磨速度之點看為較佳之形態。 杜+更,步’氧化劑為過氧化氫,以平坦化之點看為較 住之形態。 ^月之研磨用研聚,可以用較快之速度研磨所配線 二=膜上之過剩之金屬膜,且在被研磨對象物表 凹狀ί Ιίϊ研磨過剩產线傷與顺可卩作研磨,不會因 =與魏產生凹凸可以為平坦性較高之研磨。 於八ίΐ二有機粒子所形成之本發明之研磨用研製,由 對緣膜低’所以11熱處理、喔理無法 ίΐ= 以去除研磨用研聚之殘存物。 易懂,下謂舉實_,並配龍和優減更明顯 下。 配〇所附圖式,作詳細說明如 【貫施方式】 以下,具體說明本發明。 (有機粒子) 12828O^pif.doc 有機粒子(A)是藉不包含可與被研磨金屬反應之官能 基的樹脂(C),包覆具有可與被研磨金屬反應之官能基的有 機粒子(B)的部份表面的有機粒子。 在本發明中,所謂「可與被研磨金屬反應」係意味著 藉化學反應之作用,可以促進被研磨金屬之研磨速度的能 力0 可以與有機粒子(B)具有之被研磨金屬產生反應的官 月匕基’可例舉出羧基(car|3〇Xyl gr〇Up)、經基(hydroxy
group)、胺基(amine group)、g同基(ketone group)、環氧丙基 (glycidy group)、乙酿乙酿氧基(acet〇acet〇Xy gr〇Up)等。特 別以羧酸(carboxylic acid)較佳。
有機粒子(B)係可以藉聚合例如具有可以與此等被研 磨金屬產生反應之官能基的單體,以及可以與共聚合之其 他乙烯基系單體來製造。特別是,具有較佳羧基之有機粒 子的情形,對於所得到之共聚合物乳液中之羧基,以藉添 加0.3莫爾等量以上之鹼性物質,使羧基離解,而容易形 成金屬與錯合物之狀態者較佳。 本發明所使用之羧基含有乙烯基單體,其例如是選自 丙烯酸(acrylic acid)、曱基丙烯酸(methacrylic acid)、巴豆 酸(crotonic acid)等不飽和一元酸、亞甲基丁二酸(itaconic acid)、反丁稀二酸(fumaric acid)、馬來酸(maleic acid)等不 飽和二元酸或此等單酯(monoester)類所組成之族群的1種 或2種以上。特別是,以丙烯酸、曱基丙烯酸較佳。 羥基含有乙烯基單體,可例舉出有例如2-羥基乙基(間) I282804pif.doc 丙稀酸自旨(2_1^<11*〇父>^1;11}4-(11^&)-&(^7以6)、2-經基丙基(間) 丙烯酸g旨(2_hydroxypropyl_(meta)-acrylate)、2_經基丁基(間) 丙稀酸酯(2-1^<11<〇乂}^1^1-(11^&)-&〇^1&16)、4_經基丁基(間) 丙稀酸 g旨(4-hydroxybutyl_(meta)-acrylate)等。
胺基含有乙烯基單體,可例舉出含有第三胺基之胺基 含有(間)丙嫦酸酯((meta)-acrylate)系單體,例如可舉出 N,N-二曱基胺基乙基(間)丙烯酸酯 (N,N-dimethylaminoethyl-(meta)_acrylate)、N,N-二曱基胺基 丙基 (間) 丙 烯酸醋 (N,N-dimethylaminopropyl-(meta)-acrylate)、N,N_t-丁基胺 基乙基 (間) 丙稀 酸酉旨 (N,N_t-butylaminoethyl-(meta)-acrylate)、N,N_單曱基胺基 乙基 (間) 丙 烯酸酯 (N,N-monomethylaminoethyl-(meta)_acrylate)等。 另外,可例舉出含有第三胺基之N-烷基胺基(間)丙稀
醯胺(N-alkylamino_(meta)-acrylamide),例如可舉出 N,N_ 二曱基(間)丙稀酸胺(N,N-dimethyl-(meta)-acrylamide)、 Ν,Ν- 二 乙基(間)丙 稀酿胺 (N,N-diethyl-(meta)-acrylamide)、Ν,Ν_二甲基胺基丙基(間) 丙稀酿胺(N,N-dimethylaminopropyl-(meta)-acrylamide)、 N,N-二曱基胺基乙基(間)丙烯醯胺 (N,N-dimethylaminoethyl-(meta)-acrylamide)、N-異丙基(間) 丙烯臨胺(N-isopropy l-(meta)-acry lamide)等。 乙醯乙醯氧基含有乙烯基單體,可舉出者有乙醯乙醯 128280^7pifd〇c 氧基乙基(間)丙烯酸 g旨(acetoacetoxyethyl-(meta)-acrylate) 等。環氧丙基含有乙烯基單體,可舉出有環氧丙(間)丙烯 酸酯(glycidy-(meta)-acrylate)等。 具有可以與此等被研磨金屬反應之官能基之單體的 使用量,以共聚合物中之全單體成分中1〜50重量份較 佳’更佳的是3〜45重量份,最佳的是5〜40重量份。在 1重量份以下,無法得到目的之研磨速度,另外,若超過 50重量份,則耐水性、耐鹼性有時會變成差。
具有可以與上述被研磨金屬反應之官能基之單體與 可以共聚合之其他乙烯基系單體,係可以使用例如苯乙烯 (styrene)、α-曱基苯乙烯(α-methyl styrene)、乙烯基曱苯 (vinyltoluene)等苯乙烯系單體,(間)丙烯酸曱基 ((meta)-acrylic acid-methyl)、(間)丙烯酸乙基((meta)-acrylic acid-et;hyl)、(間)丙烯酸丁基((meta)_acrylie acid-butyl)、(間) 丙烯酸 2_乙基己基((meta)-acrylic acid-2-ethylhexyl)、(間) 丙烯酸異丙基((meta)-acrylic acid-isopropyl)、(間)丙稀酸異 丁基((meta)-acrylic acid_isobutyl)、(間)丙烯酸 t- 丁基 ((meta)-acrylic acid-t_butyl)、(間)丙稀酸 η-己基 ((meta)-acrylic acid_n_hexyl)、(間)丙婦酸辛基 ((meta)-acrylic acid-octyl)、(間)丙烯酸環己基 ((meta)-acrylic acid_cyclohexyl)、(間)丙烯酸異冰片基 ((meta)-acrylic acid-isobornyl)等(間)丙烯酸酯系單體,醋酸 乙稀(vinyl acetate)、丙酸乙稀(vinyl propionic acid)等乙烯 酯類,(間)丙烯腈((meta)-acrylonitrile)等乙稀氰基(vinyi I2828©ipif.cioc cyanogen)化合物’以及氣乙稀(vinyl chloride)、偏氯乙烯 (vinylidene chloride)等 _ 化(halogenation)乙烯化合物。另 — 外’作為官能基單體者,除了羧基含有乙烯基單體以外, 知:知品要可以使用(間)丙烯臨胺((meta)-acryiamide)或N-羥 甲基(間)丙稀g监胺(N-methylol-(meta)-acrylamide)等。 其他的乙烯基系單體之使用量以99〜50重量份較 佳’進一步更佳的是為95〜70重量份。 如此之有機粒子,藉添加鹼性物質,全體有膨脹者也 _ 有不膨脹者,即使其任一方均可。在此所謂膨脹,係意味 著其一次粒子之平均粒徑不會分解與凝聚,藉粒子内包含 水與其他水溶性物質而變大。 為了藉添加鹼而調整有機粒子之膨脹度,可按照需要 共聚合交聯性單體。作為交聯性單體者,係在一分子中含 有2個以上聚合性不飽和結合之單體,且可例舉出,二乙 稀基本(divinylbenzene)、丁二烯(butadiene)、乙二醇二甲基 丙稀g夂g日(ethylene glycol dimethacrylate)、三經曱基丙炫三 •甲基丙烯酸(trimethyl〇l trimethacrylate)、乙二醇二丙烯酸 SJ(ethylene glycol diacrylate) ^ 酸醋(l,3-butylene glycol dimethacrylate)、二丙烯酸酯 (diacrylate)等。交聯性單體之使用量以全單體中2〇重量份 以下較佳,更佳的是1〇重量份以下。依據具有可以與被研 磨金屬反應之官能基之不飽和單體之種類、使用量、乙烯 基系共聚合物之種類等可以適當的使用。 包覆於有機粒子(B)的表面之樹脂(Q,係由不包含玎 I2828〇7!7p if.doc 以與被研磨金屬反應之官能基之聚合物所構成,以由苯乙 稀系單體及域(間)丙賴S旨系單體之聚合物所構成者較 佳。作為苯乙烯系單體與(間)丙烯酸酯系單體之具體例 者,可舉出以具有可以與前述被研磨金屬反應之官能美之 單體與其他乙烯基系單體揭示者。 i
有機粒子之合成方法沒有特別限制,例如可以藉乳液 聚合之多階段聚合來合成。也就是,可舉出合成具有可以 與被研磨金屬反應之官能基之有機粒子(B)之後,追加人 未包含可以與被研磨金屬反應之官能基之聚合物(c)二方 法反之δ成未包含可以與被研磨金屬反應之官能基之 聚合物(C)之後,追加合成具有可以與被研磨金屬反應 能基之有機粒子(Β)之方法。 調整單體的量使有餘子⑻的表面之—部份被樹脂 (C)包覆。有機粒子宜以樹脂(c)包覆表面的—部份 的是表面的10%以上,1()〇%以下,更佳的是表面的輕 以上’ 95%以下。表面的包覆率可以SEM測定。
藉以樹脂(C)包覆有機粒子⑻的表面,可以抑制 與侵姓的問題。 在以樹脂層(C)包覆有機奸⑻狀態的粒子徑,較佳 的是10nm〜5000nm,更佳的是3〇nm〜3〇〇nm。另外 ,粒子⑷之分子量較佳的m獅萬、更佳的是 萬〜100萬。樹脂(C)之分子量較佳的是1000〜100萬、更 佳的是1萬〜50萬。 有機微粒子之研磨用研黎中的含有量,係依其有機微 I28280〇ipifd〇c 粒子而異,以0·1〜20重量百分比較佳。若在〇」重量百 分比以下,則由於有機微粒子之效果無法充分發揮,有時 會無法達成目的之研磨速度。另外,若超過2〇重量百分 比,則由於研磨用研漿的黏度較高,所以研磨時很難以一 定的速度供給研磨用研漿。 於本研磨用研漿中含有之金屬成分,特別是鈉(Na)、 鉀(k)、鐵(Fe) '鎂(Mg)等不純物成分,為了在添加過氧化 氫等氧化劑,使用本研磨研漿時能使研磨速度安定性受到
影響,上述本研磨用研漿中含有之金屬成分期望抑制於 lppm以下。 為了得到未含有金屬之有機粒子的水分散體,藉使用 未含有金屬的單體、界面活性劑等分散劑、聚合反應起始 劑,及其他添加劑可以製造。 未含有金屬之分散劑者,可舉出例如聚乙烯醇 (polyvinyl alcohol)、重組聚乙稀醇(reforming p〇iyVinyi &1〇〇11〇1)、聚乙稀〇比略烧|同(0〇^^1^1口丫1^〇仙〇116)、(間)丙 稀酸(共)聚合物((11加&)_&(^71化&(^(1_(〇〇知〇1}〇1^1〇、聚(間)丙 細西&月女(共)聚合物(poly (mata)_acryiamide-(co)polymer)、乙 glycol)等水溶性聚合物。界面活性劑者,可 舉出有陰離子系、非離子系、陽離子系。陰離子系界面活 性劑雖具有作為親水性之績酸(sulfonic acid)與叛酸等酸性 基,但可以使用未成為Na與k等金屬鹽作為其反離子 (counter ion)。一般為銨鹽(artlmonium salt),例如可舉出十 一烧基本石黃酸(dodecyl benzene sulfonic acid)、月桂基硫酸 ⑧ 14 I28280〇lpifd〇c
(lauryl sulfuric acid)、烧基二苯醚二石黃酸(alkyl diphenyl ether disulfonic acid)、烧基萘石黃酸(alkyl naphthalene sulfonic acid)、二烧基磺琥抬酸(dialkyl sulfosucconiate acid)、硬脂酸(stearic acid)、油酸(oleic acid)、磺玻珀酸二 辛酯(dioctyl sulfosuccinate)、聚氧乙稀烧基乙醚硫酸 (polyoxyethylene alkyl ether sulfuric acid)、聚氧乙醚烧基苯 基乙醚硫酸(polyoxyethylene alkyl phenyl ether sulfuric acid)、二烧基琥ίό酸、tert-辛基苯氧基乙氧基聚乙氧基單 乙酯硫酸(tert-octyl phenoxy ethoxy polyethoxy ethyl sulfuric add)等銨鹽。 另外,非離子性界面活性劑者,一般具有乙二醇鎖作 為親水性基,較多未包含金屬者。例如可舉出聚氧乙烯月 桂基ϋ(polyoxyethylene lauryl ether)、聚氧乙烯辛基苯基醚 (polyoxyethylene octyl phenyl ether)、聚氧乙烯油苯基謎 (polyoxyethylene oleyl phenyl ether)、聚氧乙烯壬基苯基醚 (polyoxyethylene nonyl phenyl ether)、氧乙烯·羥基丙烯嵌 段共聚物(oxyethylene · oxy propylene block copolymer)、 tert-辛基苯氧基乙基聚乙氧基乙醇(tert_octy 1 phenoxy ethy 1 polyethoxyethanol)、壬基苯氧基乙基聚乙氧基乙醇(nonyl phenoxy ethyl poly ethoxy ethanol)等。 進一步,陽離子系界面活性劑者,例如可舉出月桂基 三曱基氣化銨(lauryl trimethyl ammonium chloride)、硬脂醯 三曱基氣化銨(stearyl trimethyl ammonium chloride)、十六 :!:完基三曱基氣化銨(cetyl trimethyl ammonium chloride)、二 Ι2828©ΦρίΜ〇ς
硬脂醯二曱基氯化銨(distearyl dimethyl ammonium chloride)、烧基苯甲基二甲基氣化铵(alkyl benzyl dimethyl ammonium chloride)、月桂基甜菜驗(lauryl betaine)、硬脂 醯甜菜鹼(stearyl betaine)、月桂基二曱基氧化胺(lauryl dimethyl amine oxide)、月桂基羧基曱基羥基乙基咪唑甜菜 驗(lauryl carboxy methyl hydroxyl ethyl imidazo betaine)、栢p子乙酸胺(coconut amine acetate)、硬脂醯乙酸 胺(stearyl amine acetate)、烷基胍聚環氧乙醇胺(alkyl amine guanidine )、烷基口比口定氯化物(alkyl picolinium chloride)。 此等分散劑可以選擇1種或2種以上。 未含有金屬之聚合反應起始劑可例如是過氧化氫 (hydrogen peroxide)、過硫酸銨(ammonium persulfate)、偶 氮雙氰基戊酸(azobis cyano valeric acid)、2,2’·偶氮雙(2-脒 丙烧) 二鹽酸(2,2’-azobis(2-amidine propane)dihydrochloride)、2,2’_偶氮雙[2_(N_苯基脒)丙烷] 二鹽酸 (2,2’_azobis[2_(N-phenyl amidino)propane]dihydrochloride)、2,2’-偶氮雙{2-[Ν·(4-氣 苯基)脒]丙烧 } 二鹽酸 (2,2’,azobis{2_[N-(4-chlorophenyl)amidino]propane]dihydro chloride)、2,2’-偶氮雙{2-[N-(4-羥苯基)脒]丙烷}二鹽酸 (2?2,-azobis{2-[N-(4-hydroxyphenyl)amidino]propane]dihyd rochloride)、2,2’_偶氮雙[2_(Ν·苯曱基脒)丙烧]二鹽酸 (2,2’-azobis[2-(N-benzyl amidino)propane]dihydrochloride)、 2,2’-偶氮雙[2-(N-烯丙 rs) 16 I282807l7Pif-d〇c
基脒)丙烷]二鹽酸(2,2’-azobis[2-(N-allyl amidino)propane]dihydrochloride)、2,2’-偶氮雙{2_[Ν-〇里 乙基)脒] 丙烷 } 二鹽酸 (2,2’-azobis{2-[N-(4-hydroxyethyl)amidino]propane]dihydro chloride)、偶氮雙異丁腈(azobis isobutyronitrile)、2,2’-偶氮 雙{2-曱基-N-[l,l -雙(經基曱基)-2-經基乙基]丙酿 胺}(2,2’-azobis{2-methyl-N-[l,l-bis(hydroxymethyl)-2-hydr oxyethyl]propionamide})、2,2’·偶氮雙{2-曱基_N_[1,1_雙(羥 基甲基 ) 乙基] 丙醯 胺}(2,2’_azobis{2,methyl_N-[l,l_bis(hydroxymethyl)_ethyl] propionamide})、2,2’-偶氮雙[2-曱基-N-[2-羥基乙基]丙醯 胺](2,2’_azobis[2-methyl_N_[2-hydroxyethyl]propionamide]) 、2,2’-偶氮雙(異丁醯胺)二水合物 (2,2’-azobis(isobutylamide)dihydrate)等偶氮化合物(azo compound),以及異丙苯氫過氧化物(cumene hydro peroxide)、t-丁虱過氧化物(t-butylhydro peroxide)、過氧化 苯曱醯(benzoyl peroxide)、t_丁基過氧_2·乙基己酸(t_butyl peroxyl_2-ethyl hexanoic)、t_ 丁基過氧苯曱酸酯士butyl peroxyl benzoate)、過氧化月桂酸基(laur〇yl per〇xide)等有 機過氧化物(organic peroxide),可以選擇此等中之1種或2 種以上。起始劑較佳是水溶性,更佳是,過硫酸銨、偶氮 雙氰基戊酸、2,2’-偶氮雙(2-脒丙烷)二鹽酸。一般起始劑的 使用量係以使其聚合之單體的全重量為基準,在〇1〜5 量百分比之間。 I28280ipif.doc 另外,在得到有機粒子時,按照需要也可以使用时 一石瓜醇(t-dodecyl mercaptan)、n_ 十二硫醇(n d〇 i —7-難)等硫醇類,以及烯丙基磺酸⑽yl sulph〇n acid)、 .allyl Sulphon acid)^,b f ^M ^ 土匕3物,來當作是分子量調節劑。 有機粒子可以利用習知所眾知之乳化聚合法、懸浮聚 3法、機械乳化法製造。例如在乳化聚合法,存在分散劑 與起始劑的情況下,總括褒入各種單體聚合之方法、連續 _ I邊供給單體-邊聚合之方法。此時聚合之溫度通常以 30〜90C下進行’而貫質可以得到有機粒子的水分散體。 由於’乳化聚合法可以得到小粒子徑,且分散安定性優良 之有機粒子,因此其為較佳之聚合方法。 尸丙烯酸樹脂(acrylic resin)乳液分散性優良,藉以鋁、 二氧化矽、乳膠以外之曱基丙烯酸樹脂(methacrylic 二sin)、酚樹脂(phen〇l resin)、尿素樹脂(urea似㈨等有機 微粒子作為磨粒之研磨劑所見之時間經過,不會引起分離 (澄清、產生沉澱)、產生凝聚體,且通常可以得到安定之 研磨速度所以最佳。 (錯合劑) 錯合劑,最好能形成金屬與錯合物之水溶性化合物, 可舉出醋酸(acetic acid)、草酸(oxaiic acid)、蘋果酸(malic acid)、酒石酸(tartaric acid)、琥珀酸(succinic acid)、檸檬 酉夂(citric acid)荨叛酸類、曱基胺(methylamine)、二曱基胺 (dimethylamine)、三乙基胺(triethylamine)、乙基胺 I2828©i7Pifd〇c (ethylamine)、二乙基胺(diethyiamine)等胺類、甘胺酸 (glycine)、天冬胺酸(aspartic add)、麵胺酸(咖_化 add)、 f脫胺酸(Cysteine)等胺基酸類,丙酮乙醯(acetyl acetone) 等嗣類,以及口米哇(祕㈣⑹等含有N環狀化合物等。較 佳者可舉出草酸、蘋果酸、乙基胺。 將錯s背丨之$里依其錯合劑不同而有不同,以研磨用研 水中0.1 10重i百分比之範圍較佳。若為重量百分
則充分發揮其效果’有時無法達成其目的之 研磨全超過1G重量百分比,則過度的進行被 物形成,有時無法抑 磨金屬溶出之凹狀扭曲。 ]f象外之被研 被研磨物之金屬是藉由形成含於 基及/或錯合劑盥今麗料入铷叮 成4放粒子之Β月b 全屬供人^ : 可以進行較佳的金屬研磨。 合物與錯合劑之二 合劑他錯合有=子或金錯屬二Γπ 進有機餘七金屬之錯合物形之錯合物形成促 (氧化劑) 氧化劑以碘酸鉀(Potassium i〇dateU、風一 二,更佳的是過氧化氳。此等氧化^:乳化氫為較 中1〜15重量百分比之範圍較佳,1 3里以研磨用研裝 之乾圍最佳。若為Q1重量百分·〜5重量百分比 :的化學反應無法進行,有時 金屬與有機粒 12828©^°° 化膜而使表面鈍化(passivation),因此無法進行研磨,有時 會無法達成其目的之研磨速度。 τ (pH) 本發明之研磨用研漿的pH較佳是在5、;^之間,更 佳是在PH7〜10之範圍。若為pH5以下,則無法抑^金屬 的溶出,有時會產生凹狀扭曲。另外,若超過ρΗιι,則在 成為金屬膜研磨的最終點之半導體絕緣膜與金屬配線存在 於同一面上之點中,有時會使絕緣膜溶解或部分的分解。 使用於調整研磨劑之pH的物質,雖沒有特別的限 制,但驗性物質可舉出,氨(ammonia)、三乙基胺、二乙基 胺、乙基胺、三曱基胺、二曱基胺、曱基胺等胺類、Na〇H, 以及KOH等無機類等。另外,酸性物質可例舉出,鹽酸、 ,酸等無機類,以及醋酸、草酸、檸檬酸等有機酸類。此 等之PH調整劑即使兼作為可以由上述所示之金屬錯合物 所形成之錯合劑亦可。另外,此等之物質即使組合2種以 上使用亦可。 (研磨用研漿之製造方法) ,磨用研漿之製造方法係例如混合有機微粒子、錯合 刈,氧化劑及水之後,調整pH,以製造研磨劑之研漿。上 ^製造方法雖沒有特別的限制,但以在調整pH之樹脂乳 ^力上。周整pH之金屬與可以形成錯合物之錯合劑的水 /谷液充刀稅拌混合者較佳。之後,再慢慢的加上氧化劑 進一步攪拌混合。 接著,調整最後的pH與濃度之後,藉過濾紙過濾, I2828QTbpif.doc 以去除不溶解物與凝聚體,即可作為研磨劑。 (添加劑) 添加舰單獨添加餅使組合2種_上之苯半峻 ,Ζ〇ίΓ^ 8 ^糖(glUeGSe)等水雜高分子界面活性劑等之 貝亦可。其添加量係針對種類儘可能達成本發明之目 的’而沒有特別的限制。 (實施例) 以下’依據實_詳細朗本發明。另外,在本實施 =,及%除非有特別限制,不然以重量份及重量百分 比表不〇 —研磨用研漿中之有機粒子的粒徑係以下列之方法測 疋0 (使用雷射動的光散亂法原理之粒度分布測定法) ^ - MODEL : 9230(Leeds &Northrup 公司製) 7辰度條件·试料原液 測定時間:900秒 研磨用研漿之評估係以下述之方法進行。 1.研磨速度之評估 研磨研漿:本發明之研磨用研繁 被研磨物:切“之基板上疊層熱氧化漠讎入/ 1282S^otp^doc 藉濺鍍法形成之Ta膜300人/以CVD法形成之電鍍用曰種 銅膜1500 A/以電鍍法形成之銅膜15000人之8呀石夕曰曰曰片 研磨裝置:Lapmaster LGD-15 曰曰
研磨襯墊:340mmIC-1000/suba400 格子 研磨負荷·· 2psi 研磨時間:lmin 研聚供給量·· 15cc/min 定盤旋轉數:60rpm 基板側旋轉數:60rpm ①算出研磨速度 被研磨物以超純水與超音波洗淨之後,使其乾燥,然 後再使用4端子探針之片電阻(sheetresistance)測定,測定 研磨韵後的膜厚,並由膜厚的變化量與研磨時間算出平均 研磨速度。 ②表面缺陷 研磨後之被研磨物以超純水洗淨後,使其乾燥,接著 φ再以微分干涉顯微鏡、倍率x2、500倍觀察表面。又,將 具有Ο.ίμιη以上長度之表面上的割傷判斷為刻痕。 〇 :刻痕 5個以下 X :刻痕 超過5個 2·測定凹狀扭曲量 在矽晶片上之氧化膜,以乾蝕刻形成厚度5〇〇〇人、寬 ΙΟΟμιη之溝。在溝以電鍍法埋入銅作為被研磨物。使用本 發明之研磨用研漿,以上述之研磨條件進行研磨之後,藉 ⑧ 22 1282麟 p if.doc 剖面SEM照片測定溝中心部之凹部厚度。又,研磨在完 成未形成溝之部分之銅研磨之時點結束。 一 3·測定侵蝕量 • 在矽晶片上之氧化膜,以乾蝕刻形成多條0·5μιη間隔 之厚度5〇0〇Α、寬4#m之溝。在溝以電鑛法埋入銅作為 被研磨物。使用本發明之研磨用研漿,以上述之研磨條件 進行研磨之後,藉剖面SEM照片測定溝中心部之溝與兩 側之溝之段差。又,研磨在完成在溝的兩側未形成溝之部 §0 分之銅研磨之時點結束。 4·保存安定性評估 在大氣壓及室溫下’將研磨劑靜置6小時。之後,目 視觀察研磨劑之狀態。 〇 :澄清,未產生沉澱 x :未澄清,產生沉澱 (有機粒子之製造例1)
在附有攪拌機、溫度計、回流電容器之副燒瓶裝入水 2000伤、:!:元基二苯基醚二石黃酸銨(aikyi diphenyl ether disultonic acid ammonium)0.4 份,在攪拌下一邊替換說一 邊升溫至70°C為止。將内溫保持於川它下,添加1〇%偶 氮雙氰基戊酸氨中和水溶液5.2份作為聚合反應起始劑。 與此之外’混合丙烯酸乙酯(ethylacrylate)216份、甲基丙 烯酸72份、η-十二硫醇1.8份花費4小時滴下至燒瓶。30 分鐘後,在15分鐘内添加苯乙烯72份,並在70°C下保持 ⑧ 23 Ι2828ΘΦρ if.doc 4小時。所彳于之乳液固體含量⑽似⑺加⑽)為,藉 光散亂法測定之平均粒徑為l70 4nm且pH為5 0。所得之 . 有機粒子的SEM影像如圖丨所示。 " (有機粒子之製造例2) 在^付有攪拌機、溫度計、回流電容器之副燒瓶裝入水 547.3伤、烧基二苯基醚二續酸銨〇·3份,在攪拌下一邊替 換氮一邊升溫至7〇°C為止。將内溫保持於川它下,添加過 神硫酸銨I·2份作為聚合反應起始劑。與此之外,將單體甲 基丙烯酸甲酯(methyi methacryiate)222.2份 稀酸 ”份、二乙份混入烧基二苯基二:二 伤调製成乳化物,在燒瓶内花費4小時滴下乳化物。之後, f 7〇°C下保持30分鐘。接著,混合笨乙烯6〇份、水23·7 份、烧基二苯基ϋ二石黃酸㈣·05份,卩15分鐘滴下調整 乳化物,並在70°C下保持4小時。 所得之乳液固體含量| 32·6%,藉光散亂法測定之平 均粒徑為140.nm且pH為2.9。 (有機粒子之製造例3) 、回流電容器之副燒瓶裝入水
在附有攪拌機、溫度計、回流灣 434.5份、烧基二苯基鱗 換氮一邊升溫至70°C為. 硫酸銨0·4份作為聚合z 烯酸曱酯(methyl aery Ι2828®Φρ· acrylate)27.2份、乙醯乙醯氧乙基曱基丙烯酸酯37.3份、 2-羧基乙基曱基丙烯酸酯5·5份、混入烷基二苯基醚二磺 ^ 酸銨0·1份調製成乳化物。在燒瓶内花費4小時滴下乳化 物,接著在30分鐘後,混合2-乙基己基丙烯酸酯1〇份、 • 曱基丙烯酸丁酯(butyl methacrylate) 10份、水8份、烧基二 苯基醚二磺酸銨〇·〇2份,以15分鐘滴下調整之乳化物, 並在70°C下保持4小時。 所得之乳液固體含量為19.8%,藉光散亂法測定之平 均粒子徑為183nm且pH為3.2。 (有機粒子之比較製造例1)
在附有攪拌機、溫度計、回流電容器之副燒瓶裝入水 54?·3份、烷基二苯基醚二磺酸銨〇·3份,在攪拌下一邊替 換氮一邊升溫至7(TC為止。將内溫保持於70°C下,添加過 硫酸銨L2份作為聚合反應起始劑。與此之外,將單體笨 乙烯169.5份、甲基丙烯酸曱酯41份、丙烯酸丁酯85.6 份、甲基丙烯酸60.5份、混入水142份與烷基二笨基醚二 石κ酸銨0.3份調製成乳化物,在燒瓶内花費4小時滴下乳 化物。之後,以70°C下保持4小時。 所得之乳液固體含量為34.2%,藉光散亂測定之平均 粒徑為140.8nm且pH為2.4。所得之有機粒子之SEM影 像如圖2所示。 (實施例1) 25 I28280olpif.doc 使用氨將草酸10%溶液調整為ρΗ7·2。溶液與製造例 1之pH調整後之乳液、純水、30%過氧化氫、笨/半分 的混合,調整成有機粒子(固體含量)濃度50重量百分比β、 過氧化氫2·0重量百分比、草酸1〇重量百分比、ρΗ7 2、 苯半唑<0.1重量百分比。研磨結果顯示於表i。 (實施例2) 使魏將草酸1G%驗調㈣ΡΗ7·2。驗與製造例 _ 2之pH調整後之乳液、純水、3()%過氧化氫、科唆 的混合,調整成有機粒子(固體含量)濃度Μ重量 刀、 過氧化氫2·。重量百分比、草1()重量百分比 u、 苯半唾<0.1重量百分比。研磨結果顯示於表i。 · (貫施例3) 3之鄕溶液調整為PH7·2。溶液與製造例 L Λ ⑽、純水、過氧化氫、苯半唾充分 ’调整成有機粒子(固體含量)濃 過氧化氫2.0重量百分比、草酸1〇重量百八^里百刀, 本半唾<0.1重量百分比。研磨結果顯示於表^。ρ · (實施例4) #11 pH7·5 ° tit 充分的/人二/ 夜、純水、屬過氧化氫、苯半哇 、°…。正成有機粒子(固體含量)濃度50重量百分
26 I28280°lpifd〇c 比、過氧化氫2·ο重量百分比、草酸1〇重量百分 苯半吐<0.1重量百分比。研磨結果顯示於表1。.、 (實施例5) ig%財_為师.6。溶液與製 造例^之PH调整後之乳液、純水、3〇%過氧化氣、苯半 峻充分的混合,難成有機粒子(固體含量)濃度5力重量百 分比、過氧化氫2.0重量百分比、草酸1〇重量百分比、 PH7.2、本半唾如重量百分比。研磨結果顯示於表卜 (比較例1) 使用氨將草酸1G%溶液調整為PH72 i之pH調整後之乳液、純水、3〇%過氧化氣、苯半ς = 的混合’调整成有機粒子(固體含量)濃度5 ()重量百分 過氧化氫2.G重量百分比、草酸1.0重量百分比、PH7.2、 苯半峻<G.l重量百分比。研磨結果顯示於表卜
(比較例2) 除了將實施例1之有機微粒子替換為市面販售之 氧化石夕(cdlmdal siiica)(扶桑化學公司製之外進: 與實施例1同樣之操作、評估。研磨結果顯示於^。丁 27 I2828〇7l7p if.doc I2828〇7l7p if.doc 表1 研磨速度 -_iA/min) 實施例1 實施例2 3800 3700 實施例3 3500 實施例4 3200 實施例5 3100 比較例1 ------ 4200 比較例2 3900
刮傷 —凹瓦扭曲~ (A) 侵I虫 (A) 保存安定性 〇 400 220 〇 〇 400 240 〇 〇 380 210 〇 〇 370 200 〇 X 350 190 〇 〇 2600 1200 〇 X 3700 2200 X 工之絶緣膜上之過剩金屬膜,且在被研磨對象物表面,不 會因研磨過剩產生割傷或刮傷可以做研磨,沒有凹狀扭曲 與侵蝕等凹凸可以為平坦性高之研磨。 另外,在固體含量組成由有機微粒子所形成之本發明 之研磨用研’由於分解溫度遠比絕緣膜低,所以可以熱 處理、電漿處理。由於對絕緣膜未給予損壞,可以去除研 磨劑的殘存物,所以產業上利用的可能性極高。 雖然本發明已以實施例揭露如上,然其並非用以限定 本發明、,/均熟習此技㈣,林麟本發明之精神和範 圍内’當可作些許之更動與潤飾,因此本發明之保護範圍 當視後附之申請專利範圍所界定者為準。 【圖式簡單說明】 圖1係緣示製造例1所得之有機粒子之SEM影像圖。 圖2係緣示比較製造m所得之有機 像圖。 J < 丄〜 【主要元件符號說明】 益 28
Claims (1)
- .1282柳4— (月W修(湯正 替換頁 爲第941·1號中文申請專利範圍ϋ修頭 修正日期:95年η月17日 十、申請專利範圍: L一種研磨用研漿,其包括有機粒子(Α),前述有機粒 子(=)為以不具有可與被研磨金屬反應之官能基的樹脂(c) 包後t表面具有可與被研磨金屬反應之官能基的有機粒子 (f)的邻知表面之有機粒子,其中前述有機粒子(B)為以全 2體之重量為基礎,包括聚合含有選自具有羧酸基之單 ^二有麵基之單體、具有胺基之單體、具有乙醯乙醯氧 土 =單體、具有環氧丙基之單體等族群之單體1〜50重量 百刀比及其他單體99〜50重量百分比之單體組成物所得 到之共聚合物。 2·如申請專利範圍第1項所述之研磨用研漿,更包括 含有氧化劑。 t 3·如申請專利範圍第1項所述之研磨用研漿,其中樹 月曰(c)包括苯乙烯系單體及/或(間)丙烯酸酯系單體之聚合 物0 一 4·如申請專利範圍第2項所述之研磨用研漿,更包括 90 3有選自鲮酸類、胺類、胺基酸類及氨所組成之族群的至 乂、八中之一的錯合劑(complexing agent),其pH介於5〜11 之間。 5·如申請專利範圍第2項所述之研磨用研漿,其中氧 化劑為過氧化氫。 29
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