12809901280990
♦ I 九、發明說明： 【發明所屬之技術區域】 本發明係關於電鍍基板的蝕刻裝置。即，關於在電路基 板之製造製程中所使用，對於要以輸送帶水平搬送的電鍍後 ~ 的基板材，用來噴射蝕刻液進行鈾刻的蝕刻裝置。 _ 【先前技術】 《技術背景》 隨著電子機器、IT關聯機器之高性能化、高功能化、小 Φ型輕量化，成爲其基幹的印刷配線基板等之電路基板，亦促 進高精密度化、精巧化、極薄化、多樣化，而形成的電路亦 顯著的高密度化、微細化、精細化。 '而且，這種電路基板之製造製程，在貼銅積層板也就是 < 基板材的外表面，將感光性抗蝕劑塗布或貼著成膜狀之後， 對電路的負片（negative film)進行曝光之後，將電路形成部 分以外的抗蝕劑，藉由顯像來溶解除去，將電路形成部分以 外的銅箔，藉由蝕刻來溶解除去之後，將電路形成部分的抗 φ蝕劑，藉由剝膜除去，而在基板材之外表面，以銅箔來形成 電路，因此，來製造電路基板。 《先前技術》 第8圖係顯示這種先前例之蝕刻裝置，（1 )圖係其1 例的平面說明圖，（2 )圖係另一例之平面說明圖。 電路基板之製造製程所使用的這種鈾刻裝置1，係對於 要以輸送帶水平搬送的基板材A，從安裝於噴射管2之噴射 噴嘴來噴射鈾刻液B (在第8圖係省略圖示），來進行鈾刻， 1280990 1 4 因此形成電路。 而且，供給在該蝕刻裝置1的基板材A，係如第2圖之 (4 )圖的正（側）剖面圖所示，在絕緣層（心材）C之外 表面由貼著銅箔D之貼銅積層板所構成，但進而銅鍍層E 爲多。 而且，對於這樣施予鍍層E之基板材A，係由於鍍層E 的厚度誤差，含鍍層E之銅箔D的厚度，如第2圖之（4) 圖、（5 )圖所示，其前後端部F及左右端部G也就是有外 φ周部變厚，中央部Η變薄之傾向。 即，對於基板材Α在全體施予均勻地鍍層Ε，以現狀而 言認爲有困難，鍍層E之產生不均係不可避免的狀況，含鍍 層E之銅箔D的厚度誤差，亦達到5 %〜1 5 %程度。 作爲其對策，先前之蝕刻裝置1，係將沿著前後的搬送 方向J所配設之複數支的噴射管2之中，將供給到左右兩側 之噴射管2的蝕刻液B設定高壓力，因此形成從其噴射噴嘴 以更高的噴射壓噴射蝕刻液B。 φ 即，將對於銅箔D之厚度厚的左右端部G所噴射的蝕 刻液B之噴射壓，比對於基板材A的銅箔D之厚度薄的中 央部Η所噴射的蝕刻液B之噴射壓，設定成更高，因此，可 達成銅箔銅箔D的蝕刻之平均化。 還有，第8圖之（1 )圖所示的先前例之蝕刻裝置1，係 由所謂振動方式所構成，使其各噴射管2朝向左右的寬度方 向Κ稍微傾斜所配設，同時在左右的寬度方向Κ擺頭搖動。 相對地，第8圖之（2 )圖所示的先前例之蝕刻裝置1，係由 1280990 ι » 所謂橫向移動方式所構成，使其噴射管2在左右的寬度方向 K稍微水平往復移動。 《先行技術文獻資訊》 這種先前例，譬如可例舉以下專利文獻1所示的資訊。 〔專利文獻1〕日本專利特開2000-2 1 2774號公報 【發明內容】 〔發明揭示〕 〔發明所欲解決之問題〕 φ 但是，這種先前例之蝕刻裝置1，被指摘有以下的問題。 《第1問題點》 第1、被指摘的問題，係基板材A之前後端部F的銅箔 D之厚度，依然因鍍層E而仍舊很厚，因此對於基板材A， 不能實施平均的蝕刻，使高密度、微細、精細之電路成爲形 成困難。 即，這種先前例之蝕刻裝置1，如前述，將左右兩側的 噴射管2之噴射噴嘴的飩刻液B之噴射壓，藉由設定更高， 馨來增大基板材A的左右端部G之蝕刻量，因此在左右端部G 及中央部Η之間，係使銅箔D的厚度及鈾刻大致被均勻化、 平均化。 可是，前後端部F之銅箔D的厚度，仍舊很厚，這是成 爲蝕刻不能平均化形成不均勻的原因。譬如，前後端部F的 銅箔D之厚的部位成爲蝕刻不足，要形成的電路寬度變成過 大，若要彌補此點而使蝕刻量增大，則其他部位形成蝕刻過 多，使要形成電路寬度成爲過少。 1280990 1 .. 而且，這樣會阻礙銅箔D之平均的蝕刻，所以對於要以 銅箔D形成的電路，會產生電路寬度之過與不足、不均一、 誤差、不良，成爲電路的高密度化、微細化、精細化之障礙， 被指摘生產性、良品率、品質的降低。 《第2問題點》 第2、所以這種先前例之蝕刻裝置1，係在輸送帶的途 中裝入方向轉換機構，因此在途中使基板材A亦進行90度 旋轉。（參考前述專利文獻1 ) φ 而且，這種蝕刻裝置1，係對於基板材A，將旋轉前爲 止作爲前後端部F，銅箔D之厚度照舊很厚的部位，在旋轉 後作爲左右端部G，噴射高的噴射壓之蝕刻液B，使蝕刻量 增大。因此對於基板材A，通過左右端部G、前後端部F、 中央部Η，來均勻化、平均化全體銅箔D的厚度及蝕刻，亦 嚐試用來解決前述第1問題點。 可是，對於這種蝕刻裝置1，由於在途中裝入具備可旋 轉且可上下移動之旋轉台等方向轉換機構，而被指摘有成本 #明顯增加，同時使裝置大型化佔取設置空間之問題。 又，蝕刻裝置1本身，亦將含高壓之左右端部G用者的 各噴射管2，由擺頭搖動、橫向移動之振動方式、或橫向移 動方式所構成，從這個層面亦被指摘在成本層面有問題。 《關於本發明》 有關本發明之電鍍基板的蝕刻裝置，係鑑於這樣的實 情，爲了來解決上述先前例之問題，經發明人銳意硏究努力 的結果所發明。 1280990 I i 而且本發明，係提供一種電鍍基板的蝕刻裝置，其目的 爲：第1、使銅箔厚度均勻化，因此可實現平均化之蝕刻， 同時第2、而且這是簡單容易，在成本層面或空間層面皆爲 優越地實現。 〔解決問題之手段〕 《關於申請專利範圍》 這種用來解決問題之本發明的技術手段，係如下所述。 首先對於申請專利範圍第1項所記載之發明，如下所述。 φ 申請專利範圍第1項所記載之電鍍基板的蝕刻裝置，係 在電路基板之製造製程所使用，對於要藉由輸送帶水平搬送 的電鍍後的基板材，噴射蝕刻液並進行蝕刻。而且，其特徵 爲：附設有用於將該基板材之前後端部及左右端部集中進行 蝕刻之區域。 關於申請專利範圍第2項所記載之發明，係如下所述。 申請專利範圍第2項所記載之電鍍基板的蝕刻裝置，係如申 請專利範圍第1項，已供給之該基板材係被鍍銅，由於電鍍 •之厚度誤差而含外表面的鍍層之銅箔的厚度，係前後端部及 左右端部也就是在外周圍部變厚，在中央部變薄。而且，其 特徵爲：藉由在該區域集中的蝕刻，使該銅箔之厚度被修 正，並通過前後端部、左右端部、中央部被均勻化。 關於申請專利範圍第3項所記載之發明，係如下所述。 申請專利範圍第3項所記載之電鍍基板的蝕刻裝置，係如申 請專利範圍第2項，該區域係在該蝕刻裝置之上游側追加附 設，具備有：配在與前後的搬送方向垂直之左右的寬度方向 -10- 1280990 « * 之複數支的噴射管、及安裝於該噴射管並在該基板材用來噴 射蝕刻液之噴射噴嘴。而且，其特徵爲：該噴射管及噴射噴 嘴，係由該基板材之前後端部用者及左右端部用者所構成° 關於申請專利範圍第4項所記載之發明，係如下所述。 申請專利範圍第4項所記載之電鍍基板的鈾刻裝置’係如申 請專利範圍第3項，前後端部用之該噴射管的噴射噴嘴’係 在該噴射管以預定間距間隔全體安裝多數。而且’其特徵 爲：該噴射噴嘴，係根據傳感器檢測到之該基板材的位置資 φ訊或大小資訊，來時序控制蝕刻液之噴射’因此控制成僅在 該基板材的前後端部通過時，須對該前後端部限定地噴射蝕 刻液。 關於申請專利範圍第5項所記載之發明，係如下所述。 申請專利範圍第5項所記載之電鍍基板的鈾刻裝置，係如申 請專利範圍第3項，前後端部用之該噴射管的噴射噴嘴，係 在該噴射管以預定間距間隔全體安裝多數。而且’其特徵 爲：該噴射噴嘴係根據傳感器檢測到之該基板材的位置資訊 φ或大小資訊’來時序控制鈾刻液之噴射’因此控制成在該基 板材的前後端部通過時，須對該前後端部以更高的噴射壓來 噴射蝕刻液。 關於申請專利範圍第6項所記載之發明，係如下所述。 申請專利範圍第6項所記載之電鍍基板的鈾刻裝置’係如申 請專利範圍第3項，左右端部用之該噴射管的噴射噴嘴，係 僅在該噴射管之左右位置安裝少數’因此在該基板材的左右 端部對置。而且其特徵爲：該噴射噴嘴係控制成僅對該基板 1280990 材之左右端部，須限定地噴射蝕刻液。 關於申請專利範圍第7項所記載之發明，係如下所述° 申請專利範圍第7項所記載之電鍍基板的蝕刻裝置，係如$ 請專利範圍第3項，左右端部用之該噴射管的噴射噴嘴’ # 在該噴射管以預定間距間隔全體形成多數。而且，其特徵 爲：該噴射噴嘴係控制成對置於該基板材之左右端部是以更 高的噴射壓來噴射蝕刻液，而對置於該基板材之中央部是》 更低的噴射壓來噴射蝕刻液。 φ 關於申請專利範圍第8項所記載之發明，係如下所述° 申請專利範圍第8項所記載之電鍍基板的蝕刻裝置，係如申 請專利範圍第4、5、6、或7項，該噴射管係藉由各自專用 之泵來壓送鈾刻液。而且其特徵爲：該泵係進行上述控制’ .同時進而對於該基板材的前後端部或左右端部’根據寬度尺 寸資訊或銅箔厚度尺寸資訊，控制成須高低調整蝕刻液之噴 射壓。 關於申請專利範圍第9項所記載之發明’係如下所述。 φ申請專利範圍第9項所記載之電鍍基板的蝕刻裝置，係如申 請專利範圍第4、5、6、或7項，該噴射管係藉由各自專用 之電磁閥來壓送蝕刻液。而且其特徵爲：利用該電磁閥進行 上述控制，同時進而對於該基板材的前後端部或左右端部， 根據寬度尺寸資訊或銅箔厚度尺寸資訊’控制成須高低調整 蝕刻液之噴射壓。 關於申請專利範圍第1 0項所記載之發明’係如下所述。 申請專利範圍第1 0項所記載之電鍍基板的蝕刻裝置，係如 1280990 申請專利範圍第4、5、6、或7項，其特徵爲：該噴射噴嘴 係朝向左右的寬度方向，同時以斜向傾斜之噴射角度來安裝 在該噴射管。 且，限制滾筒係用於阻止已從該噴射噴嘴噴射的蝕刻 液，將該基板材在前後的搬送方向流動，而限制成僅在左右 的寬度方向流動，且該限制滾筒係在對置於該噴射管及噴射 噴嘴的區域之前後，成對配設，因此來壓接在要搬送的該基 板材。 φ 《作用等》 本發明之電鍍基板的蝕刻裝置，係由這樣之裝置所構 成，所以構成如下。 (1 )蝕刻裝置係在要搬送的基板材來噴射蝕刻液。 (2 )而且，要供給基板材已被鍍銅，由於鍍層之厚度 誤差，含外表面的鍍層之銅箱厚度，係在前後端部及左右端 部變厚而中央部變薄。 (3 )因此，該蝕刻裝置附設有用於將基板材之前後端 馨部及左右端部集中進行蝕刻之區域，上述區域係由前後端部 用區域及左右端部用區域所構成，各自具備有：配設在左右 的寬度方向之複數支的噴射管、及安裝於噴射管並用來噴射 蝕刻液之噴射噴嘴。 (4 )首先，上述區域之前後端部用的噴射噴嘴，係全 體安裝於噴射管，根據傳感器檢測到之基板材的位置資訊或 大小資訊，來時序控制蝕刻液之噴射，而且，在基板材的前 後端部通過時噴射鈾刻液，或控制成須以更高的噴射壓來噴 -13- 1280990 射蝕刻液。 (5 )其次，上述區域之左右端部用的噴射噴嘴，係僅 安裝在噴射管之左右位置’因此在基板材的左右端部噴射蝕 刻液，或控制成全體安裝在噴射管，而對置於基板材之左右 端部的噴射噴嘴係以更高的噴射壓來噴射蝕刻液所控制。 (6 )而且，在噴射管係藉由各自專用之泵或電磁閥， 來壓送蝕刻液。因此，藉由該泵或利用該電磁閥，來進行上 述控制，同時進而根據基板材之前後端部或左右端部的寬度 φ尺寸資訊或銅箔厚度尺寸資訊，來高低控制蝕刻液之噴射 壓。 (7 )進而，上述區域之噴射噴嘴，係朝向左右斜向傾 斜而安裝在噴射管。又，對於要搬送基板材，係在對置於噴 射噴嘴等的區域之前後，將限制滾筒成對配設、壓接。 因此蝕刻液係以傾斜於左右之噴射角度所噴射，同時以 限制滾筒限制，因此僅將基板材在左右方向流動，所以從這 個層面亦可實現被平均化的飩刻。 φ ( 8 )且，已供給之基板材，係如前述使銅箔的厚度在 前後端部及左右端部變厚。因此，如上述所附設之區域中， 集中地蝕刻該前後端部及左右端部，使銅箔之厚度來修正成 均勻，因此來形成所平均化的基板材之蝕刻。 (9 )而且，這樣之蝕刻平均化，係在鈾刻裝置，僅追 加附設配設有附噴射噴嘴的噴射管之上述區域，藉由簡單的 構成容易地實現。 (1 〇 )且因此，本發明之電鍍基板的触刻裝置，係發揮 -14- 1230990 以下之第1、第2效果。 〔發明效果〕 《第1效果》 第1、使銅箔之厚度均勻化，因此實現平均化的蝕刻， 成爲形成高密度、微細、精密之電路。 即，本發明之電鍍基板的蝕刻裝置，係使基板材之前後 端部、左右端部、中央部的銅箔厚度均勻化，因此實現平均 化之蝕刻。 # 所以，如前述之這種先前例的蝕刻裝置，不會產生蝕刻 不足或蝕刻過多之部位，解決電路寬度過與不足、不均一、 誤差、不良，成爲可製造高密度化、微細化、精細化的電路。 因此，提高生產性、合格率、品質。 《第2效果》 第2、而且這是，以簡單之構成更容易地實現，在成本 層面或空間層面皆爲優越。 即，本發明之電鍍基板的触刻裝置，係追加附設具備附 鲁噴射噴嘴之噴射管的區域，採用以泵或電磁閥控制的方式， 藉由簡單的構成容易地實現上述之第1點。 如前述這種先前例的蝕刻裝置，爲了蝕刻之平均化，亦 不必在途中裝入方向轉換機構，或採用振動方式或橫向移動 方式。因此在成本層面極爲優越，同時不會使裝置大型化在 空間方面亦極爲優越。 這樣，解決存在於這種先前例之問題等，發揮本發明之 效果有極爲顯著者。♦ I. Description of the invention: [Technical region to which the invention pertains] The present invention relates to an etching apparatus for a plated substrate. That is, regarding an etching apparatus for performing uranium etching on a substrate for electroplating which is to be conveyed horizontally by a conveyor belt, which is used in a manufacturing process of a circuit board. _ [Prior Art] "Technical Background" The high-precision and high-performance of the electronic equipment and the IT-related equipment, as well as the circuit board of the printed wiring board, etc. The circuit is also compact, extremely thin, and diversified, and the circuit formed is also significantly higher in density, finer, and finer. Further, in the manufacturing process of the circuit board, the negative film of the circuit is applied to the outer surface of the copper-clad laminate, that is, the outer surface of the base material, after the photosensitive resist is coated or pasted into a film shape. After the exposure, the resist other than the circuit formation portion is dissolved and removed by development, and the copper foil other than the circuit formation portion is dissolved and removed by etching, and then the circuit is formed into a portion of the anti-etching agent. The film is removed, and an electric circuit is formed on the outer surface of the base material with a copper foil, thereby manufacturing a circuit board. "Prior Art" Fig. 8 shows an etching apparatus of this prior art, (1) a plan explanatory view of one example thereof, and (2) a plan explanatory view of another example. The uranium engraving apparatus 1 used in the manufacturing process of the circuit board is for ejecting the uranium engraving liquid B from the injection nozzle attached to the injection pipe 2 for the base material A to be conveyed horizontally by the conveyor belt (omitted in Fig. 8) As shown in the figure), to carry out uranium engraving, 1280990 1 4 thus forming a circuit. Further, the base material A supplied to the etching apparatus 1 is as shown in the front (side) cross-sectional view of Fig. 2(4), and the surface of the insulating layer (heart material) C is adhered to the copper foil D. It is composed of a copper-clad laminate, but the copper plating layer E is more. Further, with respect to the base material A to which the plating layer E is applied, the thickness of the copper foil D containing the plating layer E is as shown in Fig. 2 (4) and (5), due to the thickness error of the plating layer E. The end portion F and the right and left end portions G have a tendency that the outer portion φ is thicker and the central portion is thinner. In other words, it is considered that it is difficult to apply a uniform plating layer to the entire base sheet, and the unevenness of the plating layer E is unavoidable, and the thickness error of the copper foil D containing the plating layer E is also 5 %~1 5 % degree. In the above-described etching apparatus 1, the etching liquid B supplied to the injection pipes 2 on the left and right sides is set to a high pressure among the plurality of injection pipes 2 disposed along the front and rear conveyance directions J. Therefore, it is formed to eject the etching liquid B from its ejection nozzle at a higher ejection pressure. φ is an ejection of the etching liquid B which is ejected from the center portion 薄 which is thinner than the thickness of the copper foil D of the base material A, and the ejection pressure of the etching liquid B which is ejected to the left and right end portions G of the thick copper foil D. The pressure is set to be higher, and therefore, the etching of the copper foil copper foil D can be averaged. Further, the etching apparatus 1 of the prior art shown in Fig. 8 (1) is constituted by a so-called vibration method, and the respective injection tubes 2 are arranged to be slightly inclined in the width direction of the left and right, and are simultaneously arranged. In the width direction, the head swings. On the other hand, the etching apparatus 1 of the prior art shown in Fig. 8 (2) is constituted by a so-called lateral movement method of 1280990 ι », so that the ejection tube 2 reciprocates slightly horizontally in the left and right width directions K. In the prior art example, the information shown in the following Patent Document 1 can be exemplified. [Patent Document 1] Japanese Patent Laid-Open Publication No. 2000-2 1 2774 [Invention] [Explanation of the Invention] φ However, the etching apparatus 1 of the prior art is referred to the following problem . "First Problem" The first and the problem that the copper foil D of the front end portion F of the base material sheet A is still thick due to the plating layer E, therefore, the average etching cannot be performed on the base material A. It is difficult to form a high-density, fine, and fine circuit. That is, the etching apparatus 1 of the prior art, as described above, increases the ejection pressure of the etching liquid B of the ejection nozzles of the ejection tubes 2 on the left and right sides, and increases the left and right ends of the base material A by setting a higher level. Since the etching amount of the portion G is such that the thickness of the copper foil D and the uranium engraving are substantially uniformized and averaged between the right and left end portions G and the central portion. However, the thickness of the copper foil D of the front and rear end portions F is still very thick, which is why the etching cannot be averaged to form unevenness. For example, the thick portion of the copper foil D at the front and rear end portions F is insufficiently etched, and the width of the circuit to be formed becomes excessively large. If the etching amount is increased to compensate for this, excessive etching is formed in other portions to form a circuit width. Become too little. 1280990 1 .. Moreover, since the etching of the average of the copper foil D is hindered, the circuit formed of the copper foil D has excessive and insufficient circuit width, unevenness, errors, and defects, and the circuit is dense. The obstacles of miniaturization and refinement have been accused of a decrease in productivity, yield, and quality. <<Second Problem>> In the second embodiment, the etching apparatus 1 of the prior art is equipped with a direction changing mechanism in the middle of the conveyor belt, so that the base material A is also rotated by 90 degrees in the middle. (refer to the above-mentioned Patent Document 1) φ In addition, the etching apparatus 1 is a portion where the thickness of the copper foil D is thick as the front and rear end portions F before the rotation of the base material sheet A, and the left and right end portions after the rotation. G, ejecting a high jetting etchant B to increase the amount of etching. Therefore, in the base material sheet A, the thickness and etching of the entire copper foil D are uniformized and averaged by the right and left end portions G, the front and rear end portions F, and the center portion ,, and the first problem is also solved. However, in the etching apparatus 1, since a direction changing mechanism such as a rotatable table that can be rotated up and down is mounted on the way, the cost is significantly increased, and the size of the apparatus is increased to occupy the installation space. Further, the etching apparatus 1 itself is also constituted by the respective injection tubes 2 including the high-pressure left and right end portions G, by the swinging of the swinging head, the vibration mode of the lateral movement, or the lateral movement, and are also referred to at the cost from this level. There is a problem at the level. <<Invention>> The etching apparatus for a plated substrate according to the present invention has been invented by the inventors for the purpose of solving the problems of the above-described prior art in view of such circumstances. 1280990 I i Further, the present invention provides an etching apparatus for a plated substrate, the object of which is to: firstly, the thickness of the copper foil is made uniform, so that averaging etching can be realized, and at the same time, second, and this is simple and easy, at the cost Both the level and the spatial level are superior. [Means for Solving the Problem] "About Patent Application Range" The technical means of the present invention for solving the problem is as follows. First, the invention described in the first aspect of the patent application is as follows. The etching apparatus for the plated substrate described in the first aspect of the invention is used in the manufacturing process of the circuit board, and the etching liquid is ejected and etched for the plated substrate to be horizontally conveyed by the conveyor. Further, it is characterized in that an area for concentrating the front end portion and the left and right end portions of the base material sheet is provided. The invention described in the second item of the patent application is as follows. The etching apparatus for the plated substrate described in the second aspect of the patent application is the first item of the patent application, the base plate which has been supplied is copper plated, and the copper foil of the outer surface is coated due to the thickness error of the plating. The thickness of the front and rear ends and the left and right end portions are thicker at the outer peripheral portion and thinner at the central portion. Further, it is characterized in that the thickness of the copper foil is corrected by etching concentrated in the region, and is uniformized by the front and rear end portions, the left and right end portions, and the center portion. The invention described in the third aspect of the patent application is as follows. The etching apparatus for a plated substrate according to the third aspect of the invention is the second aspect of the patent application, and the region is additionally provided on the upstream side of the etching device, and is provided to be disposed to be perpendicular to the front and rear conveying directions. Width direction -10- 1280990 « * Multiple injection tubes, and spray nozzles mounted on the spray tube for spraying etchant on the base plate. Further, the injection pipe and the injection nozzle are composed of the front end portion of the base material and the left and right end users. The invention described in claim 4 is as follows. The uranium engraving apparatus of the plated substrate described in the fourth aspect of the invention is the third item of the patent application, and the injection nozzles of the injection pipes for the front and rear ends are mounted at a predetermined interval. Moreover, it is characterized in that the injection nozzle sequentially controls the injection of the etching liquid according to the position information or the size information of the substrate detected by the sensor, so that it is controlled to pass only at the front and rear ends of the substrate. The etching liquid must be sprayed to the front and rear ends. The invention described in claim 5 of the patent application is as follows. The uranium engraving apparatus of the electroplated substrate according to the fifth aspect of the invention is the third aspect of the patent application, and the injection nozzles of the injection tubes for the front and rear ends are mounted at a predetermined interval. Moreover, the characteristic is that the injection nozzle sequentially controls the injection of the uranium engraving according to the position information φ or the size information of the substrate detected by the sensor, and thus is controlled to pass through the front and rear ends of the substrate. The etching liquid is ejected at a higher ejection pressure to the front and rear end portions. The invention described in claim 6 of the patent application is as follows. The uranium engraving apparatus of the electroplated substrate described in the sixth paragraph of the patent application is the third item of the patent application scope, and the injection nozzle of the injection tube for the left and right end portions is installed only in the left and right positions of the injection tube. The left and right end portions of the base material plate are opposed to each other. Further, the injection nozzle is controlled to eject the etching liquid only to the left and right end portions of the substrate 1280990. The invention described in the seventh aspect of the invention is the etching apparatus for the plated substrate described in the seventh aspect of the patent application, which is the third item of the patent scope, and the injection tube for the left and right ends. The jet nozzles '# are formed in a large number at the predetermined pitch intervals. Moreover, the injection nozzle is controlled to spray the etching liquid at a higher injection pressure at a right and left end portion of the base plate, and to lower the injection at a central portion of the base plate. Press to eject the etchant. The invention described in the eighth aspect of the invention is the etching apparatus of the plating substrate described in the eighth aspect of the patent application, which is the fourth, fifth, sixth, or seventh aspect of the patent application. The injection pipe is used to pump uranium engraving by a dedicated pump. Further, the pump is characterized in that the pump is subjected to the above control. At the same time, the front and rear end portions or the left and right end portions of the base material are controlled to adjust the ejection pressure of the etching liquid according to the width dimension information or the thickness information of the copper foil. The invention described in claim 9 is as follows. The etching apparatus for the plated substrate described in the ninth application of the ninth application is the fourth, fifth, sixth or seventh aspect of the patent application, and the injection pipe is configured to pump the etching liquid by a dedicated solenoid valve. Further, it is characterized in that the above-described control is performed by the solenoid valve, and at the same time, the injection pressure of the etching liquid is controlled according to the width dimension information or the copper foil thickness dimension information for the front and rear end portions or the left and right end portions of the base material. The invention described in claim 10 of the patent application scope is as follows. The etching apparatus for the plated substrate described in claim 10 is related to the fourth, fifth, sixth, or seventh aspect of the patent application No. 1,280,990, which is characterized in that the spray nozzle is oriented in the width direction of the left and right, and is inclined at the same time. The spray pipe is mounted to an inclined spray angle. Further, the restricting roller is configured to block the etching liquid that has been ejected from the ejection nozzle, to flow the base plate in the front and rear conveying directions, and to restrict the flow only in the left and right width directions, and the restricting roller is placed in the opposite direction The regions of the injection pipe and the injection nozzle are disposed in pairs before and after, so that the base plate to be conveyed is crimped. φ "Operation and the like" The etching apparatus for the plated substrate of the present invention is constituted by such a device, and is therefore configured as follows. (1) The etching apparatus ejects the etching liquid on the base material to be conveyed. (2) Further, since the base material to be supplied is plated with copper, the thickness of the copper box including the plating layer on the outer surface is thickened at the front and rear end portions and the left and right end portions, and the central portion is thinned due to the thickness error of the plating layer. (3) Therefore, the etching apparatus is provided with a region for concentrating and etching the front end singular portion and the left and right end portions of the base sheet, and the region is composed of a front-rear end portion region and a left-right end portion region, each of which is provided with : an injection pipe provided with a plurality of branches in the width direction of the right and left, and an injection nozzle mounted on the injection pipe and used to eject an etching liquid. (4) First, the injection nozzles for the front end portion of the above-mentioned region are all mounted on the injection pipe, and the injection of the etching liquid is sequentially controlled according to the position information or the size information of the base plate detected by the sensor, and, in the base plate The front and rear ends of the front end are sprayed with uranium engraving, or controlled to spray the effluent with a higher jet pressure of 13-1280990. (5) Next, the injection nozzles for the left and right end portions of the above-mentioned regions are attached only to the left and right positions of the injection tube. Therefore, the etching liquid is ejected at the left and right end portions of the base material, or the whole is mounted on the injection tube, and the opposite is mounted. The jet nozzles at the left and right ends of the base plate are controlled by ejecting an etchant at a higher jet pressure. (6) Further, the etchant is pumped by the respective dedicated pump or solenoid valve in the injection pipe. Therefore, the above control is performed by the pump or by using the electromagnetic valve, and at the same time, the ejection pressure of the etching liquid is controlled according to the width φ size information or the copper foil thickness size information of the front end portion or the left and right end portions of the base sheet. . (7) Further, the injection nozzles in the above region are attached to the injection pipe so as to be inclined obliquely to the right and left. Further, in order to convey the base material, the restriction rollers are arranged in pairs and pressure-bonded before being placed in a region opposed to the injection nozzle or the like. Therefore, since the etching liquid is ejected at an injection angle inclined to the left and right while restricting the restriction of the drum, only the base material is flown in the left-right direction, so that the engraving of the averaging can be realized from this level. φ ( 8 ) Further, the base material to be supplied is thickened at the front end portion and the left and right end portions as described above. Therefore, in the region attached as described above, the front and rear end portions and the left and right end portions are collectively etched to correct the thickness of the copper foil to be uniform, thereby forming an etch of the averaged base material. (9) Further, such etching is averaged in the uranium engraving apparatus, and only the above-mentioned region in which the injection pipe provided with the injection nozzle is attached is easily realized by a simple configuration. (1 〇) Therefore, the etch device of the plated substrate of the present invention exhibits the first and second effects of -14 to 1230990 or less. [Effect of the Invention] "First effect" First, the thickness of the copper foil is made uniform, so that the averaging is performed, and a high-density, fine, and precise circuit is formed. In other words, in the etching apparatus for a plated substrate of the present invention, the thickness of the copper foil in the front end portion, the right and left end portions, and the center portion of the base material is made uniform, so that averaging etching is realized. # Therefore, the etching apparatus of the prior art as described above does not cause a portion where etching is insufficient or excessively etched, and the circuit width is excessively insufficient, uneven, uneven, and defective, and high density, miniaturization, and fineness can be produced. Circuit. Therefore, the productivity, the pass rate, and the quality are improved. "Second Effect" No. 2, and this is that it is easier to implement with a simple configuration, and is superior at both the cost level and the space level. In other words, in the etch device of the plated substrate of the present invention, the region in which the injection pipe having the squirting nozzle is attached is additionally provided, and the first point described above can be easily realized by a simple configuration using a pump or a solenoid valve. In the etching apparatus of the prior art as described above, in order to average the etching, it is not necessary to mount the direction changing mechanism on the way, or to use a vibration mode or a lateral movement mode. Therefore, it is extremely advantageous in terms of cost, and it does not make the device large in terms of space. Thus, the problems existing in such a prior art and the like are solved, and the effects of the present invention are extremely remarkable.
1280990 • » 【實施方式】 〔實施發明之最佳形態〕 《關於圖式》 以下，將有關本發明之電鍍基板的蝕刻裝置，以圖式來 表示，根據實施發明之最佳形態，來詳細加以說明。第1圖、 第2圖、第3圖係提供說明爲了實施本發明之最佳形態。 而且，第1圖之（1)圖係其1例的平面說明圖，（2) 圖係其他例之平面說明圖。 φ 第2圖之（1 )圖係前後端部用的噴射管（配設於上側 之噴射管）之1例的正面圖，（2 )圖係前後端部甩的噴射 管（配設於上側之噴射管）之其他例的正面圖，（3 )圖係 左右端部用的噴射管（配設於上側之噴射管）之1例的正面 圖。第2圖之（4 )圖係集中鈾刻前的基板材之正（側）剖 面圖，（5 )圖係上述基板材的平面說明圖，（6 )圖係集中 蝕刻後的基板材之正（側）剖面圖，（7 )圖係上述基板材 的平面說明圖。 φ 第3圖之（1 )圖係控制用的區塊圖，（2 )圖係電鍍裝 置之正面說明圖，（3 )圖係其重要部位放大圖。 第4圖、第5圖、第6圖係蝕刻裝置本體之正面說明圖、 平面說明圖、側面說明圖。第7圖係顯示飩刻裝置本體等的 各重要部位，（1 )圖係正剖面圖，（2 )圖係另外之正剖面 圖，（3 )圖係側面圖，（4 )圖係平面圖。第9圖係電路基 板（基板材）之模式化的平面說明圖。 《關於電路基板L》 -16- 1230990 本發明之蝕刻裝置3，係在電路基板L之製造製程所使 用。因此首先，參考第9圖，對於電路基板L的槪略狀況來 加以說明。 電路基板L係AV機器、個人電腦、行動電話、數位相 機、其他各種電子機器、IT關聯機器中，使用在成爲其基幹 之電連接用，爲了連接半導體零件間，而將電路Μ圖案形成 在絕緣層之外表面或內部所構成。 而且，電路基板L係分成單面基板及兩面基板之外，有 φ多層基板（含最近增層法的基板），其他各種基板，又， 亦可分成硬質之剛性系基板及薄膜狀的撓性系基板。撓性系 基板之絕緣層係由聚醯亞胺製薄膜、其他樹脂製薄膜所構 成。 又，作爲這種電路基板L的一環，有將IC、L SI元件、 從動零件、驅動零件、電容器等之半導體零件，與電路Μ以 一體組裝的模組基板（半導體一體型之封裝基板），或在玻 璃基材一起埋入有電路Μ和半導體零件的玻璃基板，即電漿 壽顯示板PDP用之玻璃基板或LCD用的玻璃基板，進而亦出 現CSP、PBGA等。本說明書中所謂電路基板L，係除了先 前技術之印刷配線基板之外，亦包含這些廣泛的基板。 而且，電路基板L係隨著電子機器、IT關聯機器之高 性能化、高功能化、小型輕量化，亦促進高精密度化、精巧 化、而且極薄化、柔軟化、撓性化、進而多層化、多樣化等， 在外表面（表面或背面之其中一方或雙方）所形成的電路 Μ，進而在內部所形成的電路Μ亦顯著的高密度化、微細 1280990 化、精細化。 電路基板L譬如印刷配線基板，當製造時1片之縱橫的 切割尺寸，譬如由5 0 0 m m X 4 0 0 m m程度所構成。厚度係絕緣 層（心材）C部分先前從1 · 6 m m到1 . 0 m m〜6 0 μ m，現在係從 5〇μηι到ΐ〇μπι左右，被極薄化。電路μ部分（銅箔D部分） 的厚度，亦先前爲70μιη〜35μπι，現在係12μιη〜3μπι左右， 被極薄化。 多層基板之情況，亦全體的厚度係 1.0mm〜0.4mm左 φ右’繼續被極薄化。電路Μ寬度或電路Μ間空間，亦先前 爲3 0μηι〜15μηι，現在係ΙΟμιη左右而有微細化傾向。 電路基板L係形成這樣的槪略構成。 《關於電路基板L之製造方法的1例》 其次，關於使用本發明之蝕刻裝置3的電路基板L之製 造方法，參考第9圖、第2圖之（〇圖、（6)圖等來加以 說明。首先，對於第1例的製造方法來加以陳述。該製造方 法中，電路基板L譬如印刷配線基板，係根據以下步驟所製 •造。 最先，在紙苯酚製、玻璃環氧製、玻璃布製、陶瓷製、 或聚醯亞胺製、其他薄膜狀樹脂製之絕緣層（心材）C的外 表面，使銅箔D藉由熱壓、壓延、電解等貼著，以準備貼銅 積層板也就是基板材Α。 而且，對於這樣所準備之基板材A，粗化所貼著之銅箔 D表面來進行表面粗化處理（軟蝕刻）之後，切斷成短形的 加工件尺寸之各片。表面粗化處理在先前技術係藉由機械硏 -18- 1280990 磨來進行’但最近係藉由表面粗化液的噴射來進行爲多。 而且大多數之情況，通孔N用之穿孔加工係使用雷射等 所實施。通孔N係由基板材A (電路基板L )的外表面間之 微細的貫通孔所構成，對於1片形成數百個以上極小直徑之 通孔，其直徑係形成〇.5mm〜0.2mm程度以下的通孔爲多。 而且，通孔N係使用於外表面之電路μ (銅箔d)間或多層 基板的電路Μ (銅箔D)間之導通連接用，或在電路Μ所安 裝的半導體零件的安裝用。 φ 還有最近，取代需要穿孔加工之通孔Ν，來形成小突起 狀、略圓錐梯形的接點也就是凸出，因此對於多層基板等， 藉由該凸出，來實現與通孔Ν同樣功能的技術亦被開發。凸 出係以電路Μ爲準，根據顯像製程、蝕刻製程、剝膜製程等 之表面處理所製造。 然後，在基板材Α之銅箔D的外表面，使感光性抗蝕 劑塗布或貼著成膜狀。之後，對電路Μ之負片也就是預先設 計有電路Μ的電路Μ照片進行曝光，使外表面之抗蝕劑被 鲁曝光而留下硬化後的電路Μ形成部分，而其他不要之部分， 係藉由鹼性的顯像液之噴射所溶解除去。 然後，這種基板材Α之銅箔D，係抗蝕劑硬化並留下披 覆的電路Μ形成部分（保護膜部分），而藉由顯像使抗蝕劑 被溶解除去而露出之不要部分，係藉由蝕刻液Β (氯化第二 銅系、氯化第2鐵系、鹼系、其他腐蝕液）的噴射，來溶解 除去、鈾刻。然後，使留下之電路Μ形成部分的抗蝕劑，藉 由鹼性之剝膜液的噴射來剝膜除去，因此，以留下之電路Μ -19- 1280990 形成部分的銅箔D，在基板材A之外表面形成預定導體圖案 的電路Μ，來製造電路基板L。 又，在上述之顯像製程、蝕刻製程、剝膜製程附設有洗 淨製程，係用於各自後處理用或在剝膜製程之後集中後處理 ~ 用，而噴射水洗液、中和劑液、其他洗淨液。該洗淨製程係 -使附著於基板材Α的外表面（含通孔Ν內等）之顯像液、 蝕刻液B、剝膜液等的處理液被洗淨、除去。 進而，在洗淨製程之後係附設有乾燥製程。即，以洗淨 馨製程所洗淨的基板材A之外表面（含通孔N內等），由於 附著有水洗液及其他洗淨液，或此等的水分，所以爲了防止 氧化等而應除去此等，事後立刻在乾燥製程來進行乾燥處 •理。 、第1例之製造方法，係藉由這樣的濕式處理法所構成。 第1例之製造方法，係形成這樣構成。 《關於電路基板L之製造方法的其他例》 其次’對於第2例之製造方法加以陳述。作爲電路基板 φ L譬如印刷配線基板的製造方法，上述第1例之濕式處理法 係代表性之例，但第2例之半加成法亦經常使用。 半加成法中，首先在預先形成有通孔N之基板材A的 外表面’施予無電鍍銅。然後，在該無電鍍銅，將感光性抗 蝕劑塗布或貼著成膜狀之後，對電路Μ薄膜也就是電路Μ 照片進行曝光。而且，抗蝕劑係被曝光而留下硬化的部分， 其他部分也就是電路Μ形成部分，係藉由顯像液之噴射而溶 解除去。 -20- 1280990 然後，對電路Μ形成部分，即藉由顯像來溶解除去抗蝕 劑之鍍層圖案部分，也就是無電鍍銅露出的部分，施予電鍍 銅以形成電路Μ。還有，留下之硬化的電路Μ形成部分以 外之抗蝕劑，係藉由剝膜液的噴射被剝膜除去，使露出之無 ‘ 電鍍銅，藉由飩刻液Β的噴射來快速蝕刻，並被溶解除去。 - 還有，作爲各製程之後處理用，係根據前述的所述爲準，來 附設洗淨製程或乾燥製程。 第2例之半加成法係如此以電鍍銅來形成電路Μ，因此 φ製造電路基板L。第2例之製造方法係形成這樣構成。 但是，印刷配線基板及其他電路基板L之製造方法，最 近愈來愈多樣化，除了上述第1例、第2例以外，各種方法 * 被開發、使用。本發明當然亦適用於這樣的各種製造方法。 . 電路基板L之製造方法係形成這樣的構成。 《關於蝕刻裝置3之本體4》 其次，來參考第4圖、第5圖、第6圖、第7圖，對於 成爲本發明之前提的蝕刻裝置3之本體4，來加以說明。 Φ 蝕刻裝置3係在前述電路基板L之製造製程中的蝕刻製 程所使用，對於要水平搬送的基板材A，噴射蝕刻液Β並進 行蝕刻處理（藥液處理、表面處理）。 而且，在處理室也就是室5內，具備：將基板材A在搬 送方向J以水平姿勢來搬送之輸送帶6、及在要搬送的基板 材A噴射蝕刻液B的噴射噴嘴7。 首先，對於蝕刻裝置3之輸送帶6來加以陳述。輸送帶 6係具備將基板材A從上下來壓接並夾持搬送的搬送滾筒8 -21- 1280990 (參考第4圖、第6圖），搬送滾筒8係除了噴射區P，配 ' 設成在上下方向P形成上下對且必須接觸旋轉的組合，並上 下一起朝向前後之搬送方向J列設多數。至少下位之搬送滾 筒8，係由被旋轉驅動的驅動滾筒所構成。 Λ 又，圖示例之搬送滾筒8係由直形滾筒所構成，上下皆 -每隔設置3個形成相當於其1個分的噴射區Ρ (使1個分之 搬送滾筒8欠缺），上側之噴射區Ρ及下側的噴射區Ρ，係 不位於對置之位置而位於偏離搬送方向J。 φ 而且，噴射區Ρ之前後的搬送滾筒8，亦兼用作爲根制 滾筒9來發揮功能（參考第6圖、第7圖之（3)圖、（4) 圖）。 即，從噴射噴嘴7所噴射的蝕刻液Β，係將基板材Α流 - 動於前後之搬送方向J，來阻止形成亂流或液積存，因此用 於限制僅能在左右的寬度方向K來流動之限制滾筒9，係在 噴射區P (對置於後述的噴射管1 〇或噴射噴嘴7之區域） 的前後，成對配設並來壓接在要搬送的基板材A。 φ 其次，對於蝕刻裝置3之噴射噴嘴7來加以陳述。噴射 噴嘴7係在噴射區P中，對置配設於要搬送的基板材A的上 下，用來噴射蝕刻液B。 作爲噴射噴嘴7，係使用一般的全錐形噴嘴（full cone spray)或微縫噴嘴（slit spray)，以輸送帶6之搬送滾筒8在 被水平搬送的基板材A之正上方或正下方，分別保存上下 間隔，並通過前後之搬送方向J及左右的寬度方向K，隔 著預定間距間隔配列多數。 -22- 1280990 而且，蝕刻液B係從液槽1 1通過泵或配管1 2，經由噴 射管1 〇，壓送到各噴射噴嘴7，因此噴射在基板材A。而且， 流過基板材A的外表面且進行表面處理之後，從基板材A 之左右兩側往下流，回收在液槽1 1，事後亦被循環使用。 而且，圖示例的噴射管1 〇係從配管1 2被分歧之後，在 •左右的寬度方向K沿著平行，並朝向前後之搬送方向J以固 定間距配設多數支（參考第5圖）。而且，在這種各噴射管 1 〇，將噴射噴嘴7在寬度方向K，以固定間距間隔而全體安 •裝有多數。 因此，在室5內全體中，噴射噴嘴7係分別在前後、左 右隔著固定間距間隔配設多數。 又，噴射噴嘴7係朝向左右的寬度方向K，並以斜向傾 斜之噴射角度a安裝在噴射管10 (參考第4圖、第7圖之 (1 )圖、（2 )圖）。因此，從噴射噴嘴7所噴射的蝕刻液 B，係朝向寬度方向K之左方向或右方向以斜向傾斜之噴射 角度α，對基板材A來噴射，因此將基板材A的外表面，朝 Φ向左方向或右方向形成無液積存或亂流之規則性的流動，進 行蝕刻之後，從左右兩側來往下流。 而且，使朝向寬度方向K之左方向且安裝在噴射管1〇 的噴射噴嘴7之行，及朝向寬度方向K之右方向且安裝在噴 射管1 0的噴射噴嘴7之行，在前後之搬送方向J依順序交 替配置（參考第5圖）。 蝕刻裝置3之本體4係形成這樣的構成。 《關於集中蝕刻用之區域1 3》 23 - 1280990 以下，參考第1圖、第2圖、第3圖等，對於本發明來 加以說明。該蝕刻裝置3係於上下各自附設有區域1 3，用於 將基板材A之前後端部F及左右端部G，進行集中的蝕刻。 該上下之區域1 3，於圖示例係追加附設在蝕刻裝置3 '的室5內之上游側。且具備：配設在與前後的搬送方向J垂 -直90度之左右的寬度方向K之複數支的噴射管14、15,及 在安裝於噴射管1 4、1 5的基板材A來噴射蝕刻液B之噴射 噴嘴1 6、1 7。 φ 而且，噴射管14、1 5及噴射噴嘴1 6、1 7，係由基板材 A之前後端部F用噴嘴、及左右端部G用噴嘴所構成。 這是對於集中蝕刻用的區域1 3之槪要構成，更詳細來 β 加以陳述。首先，供給到該蝕刻裝置3及區域1 3的基板材 • A，係形成有銅鍍層Ε。 譬如，在電路Μ之形成前，根據爲了將通孔N內導通 處理成層間連接用、其他理由，而將貼銅積層板也就是基板 材Α的外表面（譬如表面及背面之兩方），即銅箔D的外 Φ表面，全體形成銅鍍層E爲多。 而且銅鍍層E係譬如在電鍍槽1 8將基板材A以吊鉤i 9 保持且進行浸漬，並藉由將電鍍槽1 8側作爲陽極，將基板 材A側作爲陰極來通電而實施（參考第3圖之（2)圖、（3) 圖）。 其結果，基板材A之通電度高的外周部（前後端部ρ 及左右端部G )形成厚的鍍層E，而通電度變低的中央部η 形成薄的鍍層Ε。對於基板材A，全體要施予均勻的鍍層ε， -24- 1280990 以現狀係被視爲困難，產生鍍層E厚度之不均一爲不可避免 ^的狀況。 因此，電路基板L之製造製程中，經由顯像製程而供給 到鈾刻製程的蝕刻裝置3之電鍍基板的基板材A，由於這種 鍍層E之厚度誤差，使含外表面（表面或背面）的鍍層E之 '銅箔D的厚度，在前後端部F及左右端部G也就是外周部 變厚，在中央部Η變薄（參考第2圖之（4)圖、（5)圖）。 對於要供給的基板材A，這種含鍍層Ε之銅箔D的厚度 φ誤差，在前後端部F及左右端部G及中央部Η，亦達到5 % 〜1 5 %程度。 因此，該蝕刻裝置3係在前述本體4中的蝕刻之前，在 區域1 3中，將基板材Α的外表面之前後端部F及左右端部 G，集中進行蝕刻，用來修正這種銅箔D的厚度，並通過前 後端部F、左右端部G、中央部Η進行均勻化之後，（參考 第2圖之（6 )圖、（7 )圖），來實施本體4中的蝕刻。 還有區域1 3，圖示例係在蝕刻裝置3之室5內，在本體 φ 4的上游側追加配設，但不限定於此，亦可在下游側或途中 之中間部追加附設。 集中蝕刻用之區域1 3係形成這樣的槪略構成。 《關於前後端部F用之區域1 3》 其次，參考第1圖之（1)圖、（2)圖、第2圖之（1) 圖、（2 )圖、第3圖之（1 )圖等，針對這種區域13中， 基板材Α的前後端部F之集中蝕刻用的區域1 3部分，來加 以說明。 -25 - 1280990 該前後端部F用之區域1 3的噴射管1 4之噴射噴嘴！ 6， 係在上下的噴射管1 4以預定間距間隔全體安裝多數。而且， 以傳感器20根據檢測到之基板材A的位置資訊或規格資 訊，來時序控制蝕刻液B之噴射。 ‘因此，僅在基板材A的前後端部F通過時，控制成從上 •下僅對前後端部F以限定性的、點的，來噴射蝕刻液B，或 在基板材A的前後端部F通過時，控制成從上下對前後端部 F，以更高的噴射壓來噴射蝕刻液B。 φ 對於這種前後端部F用之區域1 3的噴射管1 4或噴射噴 嘴1 6，更詳細來加以說明。 圖示例係基板材A之前端部及後端部，也就是前後端部 ^ F用的噴射管14,在左右的寬度方向K以2支平行配設。不 • 限於圖示例，亦可配設1支或3支以上。 而且，噴射噴嘴1 6係在噴射管1 4以預定間距間隔全體 安裝多數，朝向左右的寬度方向K，並以斜向傾斜之噴射角 度α，安裝在噴射管14。進而圖示例係2支之中，安裝於其 肇中1支的噴射管1 4之噴射噴嘴1 6，係朝向左方向，而安裝 於另1支的噴射噴嘴1 6，係朝向右方向（參考第2圖之（1 ) 圖、（2)圖、亦參考第7圖之（1) 、（2)圖）。噴射噴 嘴16的噴射角度α，譬如在1度〜30度程度之間可變更， 可適當選擇設定。 還有，對於該噴射管14或噴射噴嘴16，其他構成或功 能等，係以對於蝕刻裝置3之本體4的噴射管1 0或噴射噴 嘴7之前述所述爲準（譬如參考第4圖、第5圖、第6圖、 -26- 1280990 第7圖等），所以省略其說明。又，對於該區域13中之蝕 刻液B、輸送帶6、搬送滾筒8、限制滾筒9、噴射區P等， 亦以本體4之前述所述爲準，所以省略其說明。 而且，傳感器2 0係由位置傳感器所構成’用來檢測基 板材A之前端及後端的通過，將檢測到之基板材A的位置 資訊或加工件規格資訊，送出到控制器21 ° 控制器2 1係利用輸入部22預先所輸入之基板材A的前 後端部F之寬度尺寸資訊（藉由鍍層E方式來進行種種的變 鲁化，譬如前端部及後端部分別20mm )，或亦酌量銅箔D之 厚度尺寸資訊（藉由鍍層E方式來進行種種的變化’譬如 5μιη )，根據預先所讀入之程式，將驅動控制信號於第1圖 之（1 )圖例係對電磁閥24，於第1圖之（2 )圖例係通過反 相器23送出到泵25。 根據這種驅動控制信號，驅動電磁閥24或泵25，因此， 以基板材Α之前後端部F (前端部及後端部）通過的時序性 之時序，使噴射噴嘴7將蝕刻液B，以所選擇高的噴射壓（〇 · _02MPa 〜0· 3MPa，譬如 0· 15MPa)或流量（譬如 lL/min 〜5L/min )來進行噴射。 還有，僅前後端部F通過之間以高的噴射壓噴射蝕刻液 B之型式之控制，係代表性的型式，但不限定於此，亦可以 是前後端部F通過之間以高的噴射壓來噴射蝕刻液B ’而中 央部Η通過之間以低的噴射壓（譬如0 · 〇 1 MPa )噴射蝕刻 液B之型式的控制。 又，這樣的控制係除了時序控制之部分外，譬如關於噴 -27- 1280990 射壓，亦可以階段來切換的方式。又，2支之噴射管1 4之中， 2支皆使用或僅選擇1支來使用等，對於選擇使用支數的控 制亦同樣。 前後端部F用之區域1 3係形成這樣構成。 1 《關於左右端部G用之區域1 3》 •其次，參考第1圖之（1)圖、（2)圖、第2圖之（3) 圖、第3圖之（1)等，區域13之中，對於基板材A的左右 端部G之集中蝕刻用的區域1 3部分，來加以說明。 φ 該左右端部G用之區域1 3的噴射管1 5之噴射噴嘴1 7， 於圖式例中，係僅在上下的噴射管1 5之左右位置少數安裝， 因此對置於基板材A之左右端部G。而且，控制成僅對於基 ‘板材A的左右端部G，從上下以慨定性的、點的噴射蝕刻液 . B 〇 又，不根據於這樣之圖示例，左右端部G用的噴射管 1 5之噴射噴嘴1 7，係在上下之噴射管1 5並非部分性的而係 以預定間距間隔全體安裝多數，且控制成對置於基板材A之 鲁左右端部G者，係從上下將蝕刻液B以更高的噴射壓來噴 射，而對置於基板材A之中央部Η者，係從上下將蝕刻液B 以更低的噴射壓來噴射亦可。 對於這種左右端部G用之區域1 3的噴射管1 5或噴射噴 嘴1 7，來更詳細加以說明。首先圖示例，係使基板材Α之 左端部及右端部也就是左右端部G用的噴射管1 5，在左右 的寬度方向K配設成2支平行。不限於圖示例，亦可配設1 支或3支以上。 -28- 1280990 . 而且噴射噴嘴1 7於圖示例，係在噴射管1 5之左右位置 各安裝2個，朝向左右的寬度方向K，並以斜向傾斜的噴射 角度α，安裝在噴射管15(參考第2圖之（3)圖’亦參考 第7圖之（1)圖、（2)圖）。進而2支之中，安裝在1支 噴射管1 5之噴射噴嘴17，係朝向左方向，安裝在另外1支 " 噴射管1 5之噴射噴嘴1 7，係朝向右方向。 還有，對於該噴射管1 5或噴射噴嘴1 7，其他構成或功 能等係對於蝕刻裝置3之本體4的噴射管1 0或噴射噴嘴7， II進而前後端部F用之噴射管1 4或噴射噴嘴1 6，以前述所述 爲準，所以省略其說明。又，對於該區域1 3中之蝕刻液Β、 輸送帶6、搬送滾筒8、限制滾筒9、噴射區Ρ等，亦同樣 ' (譬如，參考第4圖、第5圖、第6圖、第7圖等）。 • 而且在控制器2 1，係使基板材Α之左右端部G的寬度 尺寸資訊或銅箔D之厚度尺寸資訊，利用輸入部22預先輸 入，根據預先所讀入的程式，使驅動控制信號通過電磁閥24 或反相器2 3來送出到泵2 5，而噴射噴嘴1 7係以所選擇高的 φ噴射壓來噴射蝕刻液B。 關於該控制內容，係對於前後端部F用之區域1 3的噴 射噴嘴1 6或噴射管1 4，以前述所述爲準所以省略其說明， 但該左右端部G用之區域1 3的情況，通常，係不實施時序 控制，使鈾刻液B從噴射噴嘴1 7連續噴射。 又，對於該左右端部G用之噴射噴嘴1 7，係不限定於 圖示例的型式，不僅噴射管15之左右位置而在噴射管15全 體安裝，亦可在基板材A的左右端部G將對置位置之主要 -29- 1280990 的噴射噴嘴1 7來設定高的噴射壓，在中央部Η將對置位置 ' 之副的噴射噴嘴1 7來設定低的噴射壓之型式。 還有，第1圖之圖示例中，這種左右端部G用的噴射噴 嘴，係比前後端部F用之噴射噴嘴，在區域1 3的更上游側 _ 配置，但亦可依相反之順序來配置。 • 左右端部G用的區域1 3係形成這樣之構成。 《關於泵25或電磁閥24》 於此，來參考第1圖之（1)圖、（2)圖和第3圖之（1) φ圖，對於所使用的泵25或電磁閥24，來加以說明。 首先，第1圖之（2)圖所示之例，係在噴射管14、15, 分別通過專用之泵25來壓送蝕刻液Β。而且，泵25係藉由 _ 通過反相器25，控制其吐出力的程度或驅動ΟΝ/OFF等，因 • 此控制從噴射噴嘴1 6、1 7來的蝕刻液Β之噴射時序或噴射 壓等。 又，第1圖之（1 )圖所示之例，係在噴射管14、15， 分別通過專用的電磁閥24，來壓送鈾刻液Β。而且，電磁閥 馨24係藉由使噴射管14、15分流的方式，或將直徑在途中變 更之方式，或可變更閥自體開度的方式等等所控制，因此控 制從噴射噴嘴1 6、1 7來的蝕刻液Β之噴射時序或噴射壓等。 泵25或電磁閥24係形成這樣構成。 《關於作用等》 本發明之蝕刻裝置3係如以上說明所構成。因此，形成 如下。 (1 )電路基板L之製造製程中，以蝕刻製程的蝕刻裝 -30 - 1280990 置3，係以輸送帶6對於要水平搬送之基板材A來噴射蝕刻 液B，因此蝕刻基板材A的銅箔D (參考第4圖、第5圖、 第6圖）。 (2)但是，供給到該蝕刻裝置3之基板材A形成有銅 ~ 鍍層E，由於鍍層E的厚度誤差，使含外表面（表面或背面） •之鍍層E的銅箔D之厚度，在前後端部F及左右端部G也 就是外周部變厚，在中央部Η變薄（參考第2圖之（4)圖、 (5 )圖）。 φ ( 3 )因此，在該蝕刻裝置3之上下各自附設有區域1 3， 用於將基板材Α之這種前後端部F及左右端部G集中蝕刻 (參考第1圖）。 即，該區域13係在蝕刻裝置3之本體4之上游側追加 • 附設，具備有：分別配設於左右的寬度方向K之上下的複數 支噴射管14、15，及安裝在各噴射管14、15用於在基扳材 A噴射蝕刻液B之噴射噴嘴1 6、1 7。而且，該噴射管1 4、 1 5及噴射噴嘴1 6、1 7，係由基板材A的前後端部F專用者， φ及左右端部G專用者所構成。 (4 )首先，關於上下之前述區域1 3的前後端部F用的 噴射管1 4或噴射噴嘴1 6，係如下所述（參考第1圖之（1 ) 圖、（2)圖、第2圖之（1)圖、（2)圖、第3圖之（1) 圖等）。 即，該前後端部F用之區域1 3的噴射噴嘴1 6，係在其 噴射管1 4以預定間距間隔全體安裝多數，根據以傳感器2 0 檢測到之基板材A的位置資訊或規格資訊，來時序控制蝕刻 -31 - 1280990 液B之噴射。 而且，有2種型式。即，控制成僅在基板材A之前後端 部F通過時（前端部之通過時及後端部的通過時），對前後 端部F限定性的、點的噴射蝕刻液B之型式，及不根據此， 而控制成在基板材A之前後端部F的通過時，對前後端部F 以更高的噴射壓來噴射蝕刻液B，並對中央部Η以更低噴射 壓來噴射之型式。 (5 )其次，關於上下之前述區域1 3的左右端部G用的 φ噴射管1 5或噴射噴嘴1 7，有以下2種型式（參考第1圖之 (1)圖、（2)圖、第3圖之（1)圖等）。 即第1型式中，左右端部G用之噴射噴嘴1 7，係僅在 其噴射管15的左右位置安裝少數（參考第2圖之（3)圖）， 並對置於基板材Α的左右端部G。而且，控制成僅對基板材 A的左右端部G，限定的、點的噴射蝕刻液B。 第2型式中，左右端部G用之噴射噴嘴17，係在其噴 射管1 5以預定間距間隔全體安裝多數。而且其中，控制成 φ對置於基扳材A的左右端部G之主要的噴射噴嘴1 7，係以 更高的噴射壓來噴射蝕刻液B，而對置於基板材A的中央部 Η之副的噴射噴嘴1 7，係以更低的噴射壓來噴射蝕刻液b。 (6 )又’上下之前述區域丨3的前後端部F用及左右端 部G用之噴射管1 4、1 5或噴射噴嘴1 6、1 7的這種控制，係 藉由泵25方式或利用電磁閥24方式進行。 首先’藉由泵25方式之情況下（參考第1圖之（2)圖）， 係在噴射管1 4、1 5，分別藉由專用的泵2 5來壓送蝕刻液B。 -32- 1280990 而且，藉由泵25來進行上述控制，並進而控制成根據基板 材A之前後端部F及左右端部G的寬度尺寸資訊或銅箔厚 度尺寸資訊，來高低調整蝕刻液B之噴射壓。 又，利用電磁閥24方式之情況下（參考第1圖之（i ) '圖），噴射管1 4、1 5係分別藉由專用的電磁閥24來壓送蝕 •刻液B。而且利用電磁閥24進行上述控制，並進而控制成 根據基板材A之前後端部F及左右端部G的寬度尺寸資訊 或銅箔厚度尺寸資訊，來高低調整蝕刻液B之噴射壓。 φ (7)而且，上下之前述區域13的前後端部F用及左右 端部G用之這種噴射管1 4、1 5之噴射噴嘴1 6、1 7，係在垂 直於前後的搬送方向J之左右的寬度方向K，並以斜向傾斜 '之噴斜角度（X，來安裝在噴射管14、15(參考第2圖之（1) .圖、（2)圖、（3)圖，亦參考第7圖之（1)圖、（2)圖）。 與此一起，對於要搬送之基板材A，在對置於噴射管 1 4、1 5及噴射噴嘴1 6、1 7的區域之前後，使限制滾筒9成 對配設壓接（參考第7圖之（3)圖、（4)圖）。 φ 因此，蝕刻液B係從噴射噴嘴1 6、1 7朝向左右的寬度 方向K，以傾斜之噴射角度α噴射，因此噴射於基板材A之 後，被限制滾筒9限制，使基板材A不會在前後的搬送方向 J流動，亦不會產生液積存，形成僅在左右的寬度方向K流 動。因此，從該層面亦可實現平均化之蝕刻。 (8)且’已供給之基板材a因如前述鍍層E的厚度誤 差’使含外表面之鍍層E的銅箔D之厚度，在前後端部F 及左右端部G變厚，在中央部Η變薄（參考第2圖之（4) -33- 1280990 圖、（5 )圖）。 因此，如前述，在蝕刻裝置3之本體4之上游側追加附 設上下的區域1 3，從該區域1 3之前後端部F用及左右端部 G用的噴射管1 4、1 5之噴射噴嘴1 6、1 7，來噴射飩刻液B。 藉此，使蝕刻液B噴射分配更多，在基板材A的前後端部F 及左右端部G使蝕刻量增大，因此修正基板材A之銅箔D 的厚度。 基板材A係在上述區域1 3藉由集中的蝕刻，通過前後 馨端部F、左右端部G、中央部Η，來均勻化銅箔D之厚度， 因此，在飩刻裝置3之本體4使蝕刻形成被平均化。 (9 )而且，基板材Α之這種銅箔D之厚度的均勻化， 而且蝕刻之平均化，係僅在蝕刻裝置3的上游側追加附設區 域13 ’用以集中蝕刻基板材a之前後端部f及左右端部G 即可實現。 而且，該區域13係使安裝在噴射噴嘴16、17之噴射管 14、15 ’配設複數支，以泵25或電磁閥24控制的方式所構 •成。 這樣，該蝕刻裝置3藉由簡單的構成，容易地實現蝕刻 平均化。 (1 0 )還有，僅對於基板材A之左右端部G來觀察的 情況下’相較於如前述第8圖之這種先前例，比調整蝕刻裝 置1全體中其銅箔D的厚度，如本發明在本體4之上游側的 區域1 3中，集中總括地調整銅箔d之厚度爲更確實。即， 可將中央部Η及左右端部G的銅箔D之厚度，更確實地均 -34- 1280990 句化。 【圖式簡單說明】 第1圖係對於有關本發明之電鍍基板的蝕刻裝置，提供 爲了實施發明的最佳形態之說明，（1 )圖係其一例的平面 說明圖，（2)圖係另一例之平面說明圖。 第2圖係提供爲了實施上述發明的最佳形態之說明，（1 ) 圖係前後端部用的噴射管（配設於上側之噴射管）的一例正 面圖，（2 )圖係前後端部用的噴射管（配設於上側之噴射 φ管）的另一例正面圖，（3 )圖係左右端部用的噴射管（配 設於上側之噴射管）的一例正面圖。（4 )圖係集中蝕刻前 之基板材的正（側）剖面圖，（5 )圖係上述基板材之平面 說明圖，（6 )圖係集中蝕刻後之基板材的正（側）剖面圖， (7 )圖係上述基板材之平面說明圖。 第3圖係提供爲了實施上述發明的最佳形態之說明，（1 ) 圖係控制用的區塊圖，（2 )圖係電鍍裝置之正面說明圖， (3 )圖係其重要部分放大圖。 φ 第4圖係蝕刻裝置本體之正面說明圖。 第5圖係蝕刻裝置本體之平面說明圖。 第6圖係蝕刻裝置本體之側面說明圖。 第7圖係顯示蝕刻裝置本體等之各重要部分，（1 )圖 係正剖面圖，（2 )圖係另一正剖面圖，（3 )圖係側面圖， (4 )圖係平面圖。 第8圖係顯示這種先前例之蝕刻裝置，（1 )圖係其一 例的平面說明圖，（2 )圖係另一例之平面說明圖。 -35- 1280990 第9圖係電路基板（基板材）之模式化的平面說明圖。 【元件符號說明】 1···蝕刻裝置（先前例） 2.··噴射管（先前例） 3···蝕刻裝置（本發明） 4.. .本體 5·.·室 6.. .輸送帶 φ 7...噴射噴嘴 8.. .搬送滾筒 9.. .限制滾筒 10.. .噴射管 1 1…液槽 1 2…配管 1 3 ...區域 14.. ·噴射管（本發明） 015···噴射管（本發明） 16···噴射噴嘴（本發明） 17··.噴射噴嘴（本發明） 18.. .電鍍槽 1 9…吊夠 2 0 ...傳感器 2 1...控制器 22…輸入部 -36 - 1280990 23.. .反相器 24.. .電磁閥 2 5…栗 A ...基板材 B...蝕刻液 C ...絕緣層 D ...銅箱 E…電鑛 φ F...前後端部 G ...左右端部 H...中央部 J. ..搬送方向 K. ..寬度方向 L ...電路基板 Μ ...電路 Ν...通孔 0Ρ...噴射區 Q...上下方向 α...噴射角度1280990 • » Embodiments [Best Mode for Carrying Out the Invention] <<About the Drawings>> Hereinafter, an etching apparatus for a plated substrate according to the present invention will be described in the drawings, and will be described in detail according to the best mode of the invention. Description. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1, Fig. 2, and Fig. 3 are diagrams showing the best mode for carrying out the invention. Further, Fig. 1 (1) is a plan explanatory view of one example, and (2) is a plan explanatory view of another example. (1) The front view of one example of the injection pipe (the injection pipe disposed on the upper side) of the front and rear ends of the figure (1), and the injection pipe of the front and rear ends of the figure (disposed on the upper side) A front view of another example of the injection pipe), and (3) a front view of an example of an injection pipe (arranged to the upper injection pipe) for the left and right end portions of the drawing. Fig. 2(4) is a front (side) cross-sectional view of the base plate before uranium engraving, (5) a plan view of the base plate, and (6) a plan for concentrating the base plate after etching (Side) sectional view, (7) is a plan explanatory view of the above-mentioned base plate. φ Fig. 3 (1) Block diagram for control of the diagram, (2) Front view of the electroplating apparatus, and (3) enlarged view of important parts. 4, 5, and 6 are a front explanatory view, a plan explanatory view, and a side explanatory view of the main body of the etching apparatus. Fig. 7 shows the important parts of the body of the engraving apparatus, (1) the front view of the figure, (2) the other front view of the figure, (3) the side view of the figure, and (4) the plan view of the figure. Figure 9 is a schematic plan view of a circuit board (base board). <<Circuit Substrate L>> -16- 1230990 The etching apparatus 3 of the present invention is used in a manufacturing process of the circuit board L. Therefore, first, the outline of the circuit board L will be described with reference to Fig. 9. The circuit board L is an AV device, a personal computer, a mobile phone, a digital camera, various other electronic devices, and an IT-related device, and is used for electrical connection to be its trunk. In order to connect semiconductor devices, a circuit pattern is formed in insulation. It is composed of the outer surface or the inner layer of the layer. Further, the circuit board L is divided into a single-sided board and a double-sided board, and has a φ multilayer board (substrate including the most recent build-up method), and various other boards may be divided into a rigid rigid board and a film-like flexible body. The base plate. The insulating layer of the flexible substrate is composed of a film made of polyimide and a film made of another resin. Further, as a part of the circuit board L, there is a module substrate (semiconductor-integrated package substrate) in which semiconductor components such as an IC, an L SI element, a driven component, a driving component, and a capacitor are integrally assembled with a circuit board. Or a glass substrate in which a circuit board and a semiconductor component are embedded together in a glass substrate, that is, a glass substrate for a plasma display panel PDP or a glass substrate for an LCD, and CSP, PBGA, and the like are also present. The circuit board L in the present specification includes such a wide range of substrates in addition to the printed wiring board of the prior art. In addition, the circuit board L is highly sophisticated, compact, and lightweight, as well as high-precision, compact, and extremely thin, flexible, and flexible. In the multilayer circuit, the multiplex, and the like, the circuit Μ formed on the outer surface (one or both of the front surface and the back surface) is further increased in density, fineness, and fineness. The circuit board L, such as a printed wiring board, is formed by cutting the horizontal and horizontal dimensions of one sheet, for example, by about 50,000 m X 4 0 0 m. The thickness of the insulating layer (heart material) C portion was previously from 1 · 6 m m to 1. 0 m m~6 0 μ m, now from 5〇μηι to ΐ〇μπι, is extremely thin. The thickness of the μ portion of the circuit (the portion of the copper foil D), which was previously 70 μm to 35 μm, is now extremely thinned by about 12 μm to 3 μm. In the case of a multi-layer substrate, the thickness of the whole is also 1. 0mm~0. 4mm left φ right' continues to be extremely thin. The circuit Μ width or the inter-turn space of the circuit is also 3 0 η ι 〜 15 μ η ι, which is now ΙΟ μιη and has a tendency to be fine. The circuit board L forms such a schematic structure. "One example of the method of manufacturing the circuit board L" Next, the method of manufacturing the circuit board L using the etching apparatus 3 of the present invention is described with reference to Fig. 9 and Fig. 2 (Fig., (6), etc. First, the manufacturing method of the first example will be described. In the manufacturing method, the circuit board L such as a printed wiring board is manufactured according to the following steps. First, it is made of paper phenol, glass epoxy, The outer surface of the insulating layer (heart material) C made of glass cloth, ceramic, or polyimide, and other film-like resin, the copper foil D is adhered by hot pressing, rolling, electrolysis, etc., to prepare a copper layer. The substrate is also a base sheet. Further, for the base sheet A thus prepared, the surface of the copper foil D to which it is attached is roughened to be subjected to surface roughening treatment (soft etching), and then cut into a short workpiece size. Each sheet. The surface roughening treatment was carried out by the prior art by mechanical 硏-18-1280990 grinding 'but recently it was carried out by spraying the surface roughening liquid. And in most cases, the through hole N is used. Perforation processing using lasers, etc. FIG. Vias constituted by N lines of fine through-hole between the outer surface of the base plate A (circuit board L), for a through hole is formed over hundreds of very small diameter, which diameter is formed square-based. 5mm~0. There are many through holes of 2 mm or less. Further, the through hole N is used for the conduction connection between the circuit μ (copper foil d) on the outer surface or the circuit Μ (copper foil D) of the multilayer substrate, or the mounting of the semiconductor component mounted on the circuit board. φ Recently, in place of the through hole 需要 which needs to be punched, a contact having a small protrusion shape and a slightly conical trapezoidal shape is formed. Therefore, the multilayer substrate or the like is realized by the same as the through hole Ν. Functional technology has also been developed. The bumps are manufactured according to the surface treatment of the developing process, the etching process, the stripping process, and the like. Then, the photosensitive resist is applied or adhered to the outer surface of the copper foil D of the base sheet. After that, the negative film of the circuit, that is, the circuit 预先 which is pre-designed with the circuit 进行, is exposed, so that the resist on the outer surface is exposed by Lu to leave the hardened circuit Μ forming part, and other unnecessary parts are borrowed. It is dissolved and removed by spraying with an alkaline developing solution. Then, the copper foil D of the base sheet is hardened by the resist and leaves a circuit-forming portion (protective film portion) which is covered, and the resist is dissolved and removed by the development to expose the unnecessary portion. It is dissolved and removed and uranium engraved by spraying of etching liquid Β (chlorinated second copper, chlorinated second iron, alkali, or other corrosive liquid). Then, the remaining portion of the circuit is formed into a portion of the resist, which is stripped by the ejection of the alkaline stripping solution, thereby forming a portion of the copper foil D by leaving the circuit Μ-19-1280990. The circuit board of the predetermined conductor pattern is formed on the outer surface of the base material A to manufacture the circuit board L. Further, in the above-mentioned developing process, etching process, and stripping process, a cleaning process is provided for each post-treatment or after the stripping process is concentrated and post-treated, and the water washing liquid, the neutralizing agent liquid, Other cleaning solutions. This cleaning process is to remove and remove the processing liquid such as the developing liquid, the etching liquid B, and the stripping liquid which are attached to the outer surface of the substrate sheet (including the inside of the via hole, etc.). Further, a drying process is attached after the cleaning process. In other words, the outer surface of the base material A which is washed by the washing process (including the inside of the through hole N, etc.) is adhered to the washing liquid, other washing liquid, or the like, so that it is required to prevent oxidation or the like. In addition to this, immediately after the drying process in the drying process. The manufacturing method of the first example is constituted by such a wet processing method. The manufacturing method of the first example is configured as described above. <<Other examples of the method of manufacturing the circuit board L>> Next, the manufacturing method of the second example will be described. As a circuit board φ L such as a method of manufacturing a printed wiring board, the wet processing method of the first example is a typical example, but the half-additive method of the second example is also often used. In the semi-additive method, first, electroless copper is applied to the outer surface of the base material A on which the through holes N are formed in advance. Then, after the photosensitive resist is applied or adhered to the film in the electroless copper plating, the circuit Μ film, that is, the circuit Μ photo is exposed. Further, the resist is exposed to leave a hardened portion, and the other portion, that is, the circuit formation portion, is dissolved and removed by ejection of the developing liquid. -20- 1280990 Then, the portion of the circuit is formed by dissolving and removing the portion of the plating pattern of the resist, that is, the portion where the electroless copper is exposed, and plating copper is applied to form a circuit. Further, the resist remaining outside the hardened circuit Μ is stripped by the ejection of the stripping liquid, so that the exposed copper is not etched by the etch of the etchant liquid. And is dissolved and removed. - In addition, as a post-process for each process, a cleaning process or a drying process is attached as described above. In the semi-additive method of the second example, the circuit board is formed by electroplating copper, and thus the circuit board L is manufactured by φ. The manufacturing method of the second example is configured as described above. However, the methods for manufacturing printed wiring boards and other circuit boards L have recently become more diverse, and various methods have been developed and used in addition to the first and second examples described above. The invention is of course also applicable to such various manufacturing methods. . The manufacturing method of the circuit board L forms such a structure. <<About the body 4 of the etching apparatus 3>> Next, referring to Fig. 4, Fig. 5, Fig. 6, and Fig. 7, the main body 4 of the etching apparatus 3 which has been proposed in the present invention will be described. The Φ etching apparatus 3 is used in an etching process in the manufacturing process of the circuit board L described above, and the etching liquid is ejected for the base material A to be horizontally conveyed and subjected to etching treatment (chemical liquid treatment, surface treatment). Further, in the processing chamber, that is, the chamber 5, the conveyor belt 6 for conveying the base material A in the conveyance direction J in a horizontal posture, and the injection nozzle 7 for ejecting the etching liquid B to the substrate material A to be conveyed are provided. First, a description will be given of the conveyor belt 6 of the etching apparatus 3. The conveyor belt 6 is provided with a transport roller 8-21- 1280990 (refer to Figs. 4 and 6) for pressing and holding the base material A from above, and the transport roller 8 is provided in addition to the spray zone P. In the up-down direction P, a combination of up-and-down pairs and having to be in contact with rotation is formed, and a plurality of them are arranged vertically in the transport direction J. At least the lower transfer drum 8 is constituted by a drive roller that is rotationally driven. Further, the transport roller 8 of the illustrated example is constituted by a straight roller, and each of the upper and lower sides is provided with three spray zones corresponding to one minute (the one transfer roller 8 is missing), and the upper side The injection zone Ρ and the lower injection zone 位于 are located at the opposite positions and are located in the deviation direction J. φ In addition, the transfer drum 8 before and after the ejection zone 兼 also functions as the root roller 9 (refer to Fig. 6 and Fig. 7 (3) and (4)). In other words, the etching liquid jet ejected from the ejection nozzle 7 prevents the formation of turbulent flow or liquid accumulation by turbulently moving the substrate sheet in the transport direction J in the front and rear directions. Therefore, it is limited to the width direction K in the left and right directions. The flow restricting roller 9 is disposed in front of and behind the injection zone P (opposite the region of the injection pipe 1 or the injection nozzle 7 to be described later), and is press-contacted to the base material A to be conveyed. φ Next, the injection nozzle 7 of the etching apparatus 3 is stated. The ejection nozzles 7 are disposed in the ejection region P, and are disposed opposite to the upper and lower substrates A to be transported, for ejecting the etching liquid B. As the injection nozzle 7, a general full cone spray or a slit spray is used, and the transfer drum 8 of the conveyor belt 6 is directly above or below the substrate A which is horizontally conveyed, The upper and lower intervals are respectively stored, and the majority is arranged at a predetermined pitch interval by the transport direction J and the left and right width directions K. -22- 1280990 Further, the etching liquid B is pumped from the liquid tank 1 1 through the pump or the pipe 12 through the injection pipe 1 to the respective injection nozzles 7, so that it is sprayed on the base material A. Further, after flowing through the outer surface of the base material A and performing surface treatment, it flows downward from the left and right sides of the base material A, and is recovered in the liquid tank 1 and is also recycled afterwards. In addition, after the injection pipes 1 of the illustrated example are branched from the pipe 12, they are parallel in the width direction K of the left and right, and a plurality of branches are arranged at a fixed pitch toward the front and rear conveying directions J (refer to Fig. 5). . Further, in each of the injection pipes 1 〇, the injection nozzles 7 are disposed at a fixed pitch in the width direction K, and are mounted in a large number. Therefore, in the entire chamber 5, the injection nozzles 7 are arranged at a fixed interval in the front, rear, left and right, respectively. Further, the injection nozzle 7 is attached to the injection pipe 10 at an injection angle a which is obliquely inclined in the left-right width direction K (refer to Figs. 4 and 7 (1) and (2)). Therefore, the etching liquid B ejected from the ejection nozzle 7 is ejected toward the base material A toward the left or right direction of the width direction K at an oblique angle α, so that the outer surface of the base material A is directed toward Φ A regular flow of liquid-free accumulation or turbulent flow is formed in the left or right direction, and after etching, it flows downward from the left and right sides. Further, the row of the ejection nozzles 7 that are attached to the ejection tube 1〇 in the left direction in the width direction K and the ejection nozzles 7 that are attached to the ejection tube 10 in the right direction in the width direction K are transported before and after. The direction J is alternately arranged in order (refer to Fig. 5). The body 4 of the etching apparatus 3 is formed in such a configuration. <<Region 1 3 for concentrated etching>> 23 - 1280990 Hereinafter, the present invention will be described with reference to Figs. 1, 2, 3 and the like. The etching apparatus 3 is provided with a region 13 attached to the upper and lower sides for collectively etching the front end portion F and the left and right end portions G of the base material A. The upper and lower regions 13 are additionally attached to the upstream side in the chamber 5 of the etching apparatus 3' in the illustrated example. Further, the injection pipes 14 and 15 disposed in a plurality of width directions K perpendicular to the front and rear conveyance directions J and about 90 degrees in the front and rear direction, and the base plate A attached to the injection pipes 14 and 15 are sprayed. The ejection nozzles of the etching liquid B are 16.6, 17. φ Further, the injection pipes 14 and 15 and the injection nozzles 16 and 17 are constituted by nozzles for the front end portion F of the base material A and nozzles for the left and right end portions G. This is a constitution for the region 13 for concentrated etching, and is described in more detail. First, the base material plate A supplied to the etching apparatus 3 and the region 13 is formed with a copper plating layer. For example, before the formation of the circuit board, the copper-clad laminate, that is, the outer surface of the substrate sheet (such as both the front and the back), is used for the purpose of connecting the vias in the via hole to the interlayer connection, for other reasons. That is, the outer Φ surface of the copper foil D has a large number of copper plating layers E. Further, the copper plating layer E is carried out by, for example, holding the base material A in the plating tank 18 with the hook i 9 and immersing it, and applying electricity by using the side of the plating tank 18 as an anode and the side of the base material A as a cathode (refer to Figure 3 (2) and (3) Figure 3). As a result, the outer peripheral portion (the front and rear end portions ρ and the left and right end portions G) having a high degree of electric current of the base material sheet A forms a thick plating layer E, and the central portion η having a low degree of electric current forms a thin plating layer. For the base material A, a uniform plating layer ε is applied to the whole, and -24 to 1280990 is considered to be difficult in the present situation, and the unevenness of the thickness of the plating layer E is unavoidable. Therefore, in the manufacturing process of the circuit board L, the base material A of the plating substrate supplied to the etching apparatus 3 of the uranium engraving process via the developing process is made to have the outer surface (surface or back) due to the thickness error of the plating layer E. The thickness of the copper foil D of the plating layer E is thicker at the front and rear end portions F and the left and right end portions G, and is thinner at the center portion (refer to Figs. 2(4) and (5)). . With respect to the base material A to be supplied, the thickness φ of the copper foil D containing the plating layer is about 5% to 15% in the front and rear end portions F, the left and right end portions G, and the central portion. Therefore, the etching apparatus 3 is etched in the region 13 before the etching in the body 4, and the front end portion F and the left and right end portions G of the outer surface of the substrate sheet are collectively etched to correct the copper. The thickness of the foil D is equalized by the front and rear end portions F, the left and right end portions G, and the central portion Η (see (6) and (7) in Fig. 2), and etching in the body 4 is performed. Further, the region 13 is provided in the chamber 5 of the etching apparatus 3, and is additionally disposed on the upstream side of the main body φ4. However, the present invention is not limited thereto, and may be additionally attached to the downstream side or the intermediate portion in the middle. The region 13 for concentrated etching forms such a schematic structure. "Regarding Area 1 3 for Front and Rear End F" Next, refer to (1), (2), 2 (1), (2), and (1) of Figure 1 In the above-described region 13, the portion of the region 13 for collective etching of the front and rear end portions F of the base sheet member will be described. -25 - 1280990 The injection nozzle of the injection pipe 14 of the area 1 3 for the front and rear end portions F! 6. A plurality of injection tubes 14 are attached to the upper and lower portions at a predetermined interval. Further, the sensor 20 sequentially controls the ejection of the etching liquid B based on the detected position information or specification information of the base material A. ' Therefore, only when the front and rear end portions F of the base material sheet A pass, it is controlled to eject the etching liquid B only from the upper and lower ends to the front and rear end portions F in a limited manner, or at the front and rear ends of the base material sheet A. When the portion F passes, it is controlled to eject the etching liquid B at a higher ejection pressure from the upper and lower sides to the front and rear end portions F. φ The injection pipe 14 or the injection nozzle 166 of the region 13 for the front and rear end portions F will be described in more detail. In the illustrated example, the front end portion and the rear end portion of the base material sheet A, that is, the injection tube 14 for the front and rear end portions, are disposed in parallel in the width direction K of the left and right. Not limited to the example of the figure, one or more than one or more. Further, the injection nozzles 16 are attached to the injection pipe 14 by a plurality of injection pipes 14 which are mounted at a predetermined pitch, and are oriented in the width direction K of the right and left, and are inclined at an oblique angle α. Further, among the two examples, the injection nozzles 16 of the injection pipe 14 attached to one of the crucibles are oriented in the left direction, and the injection nozzles 16 attached to the other one are oriented in the right direction ( Refer to (1) and (2) of Figure 2, and also refer to (1) and (2) of Figure 7. The injection angle α of the injection nozzle 16 can be changed, for example, between 1 and 30 degrees, and can be appropriately selected. Further, other configurations, functions, and the like of the injection tube 14 or the injection nozzle 16 are based on the above-described injection tube 10 or injection nozzle 7 of the body 4 of the etching apparatus 3 (for example, refer to FIG. 4, Fig. 5, Fig. 6, -26-1280990, Fig. 7, etc., so the description thereof is omitted. Further, the etching liquid B, the conveying belt 6, the conveying drum 8, the regulating drum 9, the injection zone P, and the like in the region 13 are also referred to as described above for the main body 4, and therefore the description thereof will be omitted. Moreover, the sensor 20 is composed of a position sensor for detecting the passage of the front end and the rear end of the base material A, and sending the detected position information of the base material A or the processing part specification information to the controller 21 ° controller 2 1 is the width dimension information of the front and rear end portions F of the base material A input in advance by the input unit 22 (various refinement by the plating E method, for example, the front end portion and the rear end portion are respectively 20 mm), or Thickness information of the copper foil D (various changes such as 5μιη by the plating E method), according to the program read in advance, the driving control signal is in the first figure (1) to the solenoid valve 24, The legend of (2) in Fig. 1 is sent to the pump 25 through the inverter 23. According to such a drive control signal, the solenoid valve 24 or the pump 25 is driven. Therefore, the injection nozzle 7 is caused to etch the liquid B by the timing of the passage of the front end portion F (front end portion and rear end portion) of the base sheet ,. The injection is performed at a selected injection pressure (〇· _02 MPa to 0·3 MPa, for example, 0·15 MPa) or a flow rate (for example, 1 L/min to 5 L/min). In addition, the control of the type in which the etching liquid B is ejected only by the high injection pressure between the front and rear end portions F is a representative type, but the present invention is not limited thereto, and the front and rear end portions F may be high. The ejection pressure is used to eject the etching liquid B' and the central portion Η passes the control of ejecting the etching liquid B at a low ejection pressure (for example, 0 · 〇1 MPa). Moreover, such a control system can be switched in stages, in addition to the timing control, such as the injection of -27-12890990. Further, among the two injection pipes 14 of the two, both of them are used or only one is selected for use, and the control for selecting the number of uses is also the same. The region 13 for the front and rear end portions F is configured as described above. 1 "Regarding the area 1 for the left and right end G" • Next, refer to the (1), (2), (2), and (1), etc. areas of Figure 1 In the case of 13 , a portion of the region 13 for collective etching of the left and right end portions G of the base material A will be described. φ The injection nozzles 17 of the injection pipe 15 of the region 13 for the left and right end portions G are simply mounted in the left and right positions of the upper and lower injection pipes 15 in the illustrated example, and thus are placed on the base plate A. The left and right ends G. Further, it is controlled so that only the left and right end portions G of the base plate A are ejected from the upper and lower sides with a punctually etched liquid. In addition, according to the example of the figure, the injection nozzles 17 of the injection pipe 15 for the left and right end portions G are not partially partial and are mounted at a predetermined interval. And controlling the pair of left and right end portions G of the base plate A, the etchant B is sprayed from the upper and lower sides at a higher jet pressure, and is placed on the central portion of the base plate A, from the upper and lower sides. It is also possible to eject the etching liquid B at a lower injection pressure. The injection pipe 15 or the injection nozzle 17 of the region 13 for the left and right end portions G will be described in more detail. First, in the example of the drawing, the left end portion and the right end portion of the base sheet, that is, the injection tube 15 for the left and right end portions G are arranged in two parallel directions in the left and right width directions K. It is not limited to the example of the figure, and one or more of them may be provided. -28- 1280990 . Further, in the example of the drawing, the injection nozzles 17 are attached to the injection pipe 15 in the left and right positions of the injection pipe 15 and are oriented in the width direction K of the left and right, and are inclined at an oblique angle α (refer to the second Figure (3) is also referred to Figure 7 (1) and (2). Further, among the two branches, the injection nozzles 17 attached to one of the injection pipes 15 are oriented in the left direction, and are mounted on the other one of the injection nozzles 17 of the injection pipe 15 in the right direction. Further, for the injection pipe 15 or the injection nozzle 17, other configurations or functions are applied to the injection pipe 10 of the body 4 of the etching apparatus 3, the injection nozzle 7, and the injection pipe 14 for the front and rear ends F. The injection nozzle 16 is the same as described above, so the description thereof will be omitted. Further, the etching liquid Β, the conveying belt 6, the conveying drum 8, the regulating drum 9, the injection zone Ρ, and the like in the region 13 are also the same (for example, refer to Fig. 4, Fig. 5, Fig. 6, and 7 maps, etc.). • In the controller 2 1, the width dimension information of the left and right end portions G of the base sheet or the thickness dimension information of the copper foil D is input in advance by the input unit 22, and the drive control signal is made based on the program read in advance. The solenoid valve 24 or the inverter 23 is sent to the pump 25, and the injection nozzle 17 ejects the etching liquid B at a selected high φ injection pressure. The control content is the injection nozzle 16 or the injection pipe 14 of the region 13 for the front and rear end portions F, and the description thereof is omitted, but the region 13 for the left and right end portions G is omitted. In the case, usually, timing control is not performed, and the uranium engraving B is continuously ejected from the ejection nozzles 17. In addition, the injection nozzles 17 for the left and right end portions G are not limited to the type illustrated in the drawings, and are not only attached to the entire injection tube 15 but also to the left and right ends of the base plate A. G sets a high injection pressure to the injection nozzle 17 of the main -29 to 1280990 at the opposing position, and sets a low injection pressure type at the center portion 喷射 the injection nozzle 17 of the opposite position '. Further, in the example of the first figure, the injection nozzles for the left and right end portions G are arranged on the upstream side of the region 13 than the injection nozzles for the front and rear end portions F, but may be reversed. The order is configured. • The area 13 for the left and right end portions G is configured as described above. <<About Pump 25 or Solenoid Valve 24>> Here, referring to FIG. 1 (1), (2), and FIG. 3 (1) φ, for the pump 25 or the solenoid valve 24 used, Explain. First, in the example shown in Fig. 2 (2), the ejector tubes 14 and 15 are respectively pumped by the dedicated pump 25 to etch the etchant. Further, the pump 25 controls the degree of the discharge force or drives the ΟΝ/OFF or the like by the inverter 25, and this controls the ejection timing or ejection pressure of the etching liquid from the ejection nozzles 16 and 17. Wait. Further, in the example shown in Fig. 1 (1), the uranium engraving cartridges are pressure-fed by the dedicated electromagnetic valves 24 in the injection pipes 14 and 15, respectively. Further, the solenoid valve 24 is controlled by the manner in which the injection pipes 14 and 15 are branched, or the diameter is changed in the middle, or the manner in which the valve opening degree can be changed, etc., so that the control nozzle 16 is controlled. , the ejection timing of the etchant solution, the ejection pressure, and the like. The pump 25 or the solenoid valve 24 is constructed in this manner. <<About Effect, etc.>> The etching apparatus 3 of the present invention is constructed as described above. Therefore, it is formed as follows. (1) In the manufacturing process of the circuit board L, the etching process is performed by the etching process -30 - 1280990, and the conveyor belt 6 is used to eject the etching liquid B for the substrate A to be horizontally conveyed, thereby etching the copper of the base material A. Foil D (refer to Figure 4, Figure 5, Figure 6). (2) However, the base material A supplied to the etching apparatus 3 is formed with a copper-plated layer E, and the thickness of the copper foil D of the plating layer E including the outer surface (surface or back surface) is caused by the thickness error of the plating layer E. The front end portion F and the left and right end portions G are thicker at the outer peripheral portion, and are thinner at the center portion (refer to Figs. 2(4) and (5)). φ ( 3 ) Therefore, a region 13 is provided on the upper and lower sides of the etching apparatus 3 for collectively etching the front and rear end portions F and the left and right end portions G of the base sheet ( (refer to Fig. 1). In other words, the region 13 is additionally provided on the upstream side of the main body 4 of the etching apparatus 3, and includes a plurality of injection pipes 14 and 15 disposed above the left and right width directions K, and attached to the respective injection pipes 14 And 15 are used to eject the ejection nozzles 16 and 17 of the etching liquid B on the base plate member A. Further, the injection pipes 14 and 15 and the injection nozzles 16 and 17 are composed of a dedicated front and rear end portion F of the base material A, and a dedicated φ and left and right end portions G. (4) First, the injection pipe 14 or the injection nozzle 16 for the front and rear end portions F of the upper and lower regions 13 are as follows (refer to Fig. 1 (1), (2), and 2 (1), (2), 3 (1), etc.). In other words, the injection nozzles 66 of the region 13 for the front and rear end portions F are mounted at a predetermined interval in the injection pipe 14 at a predetermined interval, and the position information or specification information of the base material A detected by the sensor 20 is used. , to the timing control etching -31 - 1280990 liquid B injection. Moreover, there are two types. That is, it is controlled so that only the front end portion F passes before the base sheet A passes (when the front end portion passes and the rear end portion passes), and the type of the jet etchant B that is limited to the front and rear end portions F, and According to this, when the passage of the rear end portion F before the base sheet A is controlled, the etching liquid B is ejected to the front and rear end portions F at a higher ejection pressure, and the central portion is ejected with a lower ejection pressure. Type. (5) Next, the following two types of φ injection pipe 15 or injection nozzle 17 for the left and right end portions G of the upper and lower regions 1 3 are referred to (refer to Fig. 1 (1) and (2); , Figure 3 (1), etc.). In the first type, the injection nozzles 17 for the left and right end portions G are only slightly attached to the left and right positions of the injection pipe 15 (refer to Fig. 2 (3)), and are placed on the left and right sides of the base plate. End G. Further, it is controlled to eject the etching liquid B only at the right and left end portions G of the base material A. In the second type, the injection nozzles 17 for the right and left end portions G are mounted in a large number of the injection tubes 15 at a predetermined pitch. Further, among them, the main injection nozzles 17 which are controlled to be opposed to the left and right end portions G of the base plate member A are ejected with a higher ejection pressure to eject the etching liquid B, and are opposed to the central portion of the base plate A. The jet nozzle 17 of the sub jet ejects the etching liquid b at a lower jet pressure. (6) This control of the front and rear end portions F of the upper and lower portions 丨3 and the injection tubes 14 and 15 or the injection nozzles 16 and 17 for the left and right end portions G are controlled by the pump 25 Or use the solenoid valve 24 way. First, in the case of the pump 25 method (refer to Fig. 1 (2)), the ejection tubes 14 and 15 are respectively pumped by the dedicated pump 25 to the etching liquid B. -32- 1280990 Further, the above control is performed by the pump 25, and further controlled to adjust the etching liquid B according to the width dimension information of the front end portion F and the left and right end portions G of the base sheet A or the thickness information of the copper foil. Spray pressure. Further, in the case of the solenoid valve 24 method (refer to Fig. 1(i)'), the injection pipes 14 and 15 are respectively pressed and etched by the dedicated solenoid valve 24. Further, the above-described control is performed by the electromagnetic valve 24, and further controlled to adjust the ejection pressure of the etching liquid B in accordance with the width dimension information of the front end portion F and the left and right end portions G of the base sheet A or the thickness information of the copper foil. φ (7) Further, the front and rear end portions F of the upper and lower regions 13 and the ejection nozzles 16 and 17 of the ejection tubes 14 and 15 for the left and right end portions G are in a direction perpendicular to the front and rear. The width direction K of the left and right sides of J is attached to the injection pipes 14 and 15 by the oblique inclination angle (X) (refer to Fig. 2 (1). Fig., (2), (3), and also refer to (1) and (2) of Fig. 7. Along with this, with respect to the base material A to be conveyed, the restriction rollers 9 are paired and crimped before being placed in the area of the injection pipes 14 and 15 and the injection nozzles 16 and 17 (refer to the seventh stage). Figure (3), (4) Figure). Therefore, the etching liquid B is ejected at the oblique injection angle α from the injection nozzles 16 and 17 toward the left and right width directions K. Therefore, after being ejected to the base material A, the restriction roller 9 is restricted so that the base material A does not become. When the flow direction J flows in the front and rear directions, liquid does not accumulate, and it flows in the width direction K of the left and right. Therefore, averaging etching can also be achieved from this level. (8) The thickness of the copper foil D of the plating layer E containing the outer surface is increased by the thickness error of the plating layer E as described above, and the front and rear end portions F and the left and right end portions G are thickened at the center portion. Η Thin (refer to Figure 4 (4) -33- 1280990, (5)). Therefore, as described above, the upper and lower regions 1 3 are additionally provided on the upstream side of the main body 4 of the etching apparatus 3, and the jets 14 and 15 for the rear end portion F and the left and right end portions G are sprayed from the front portion of the region 13 The nozzles 16.6, 17 are used to spray the etchant B. As a result, the etching liquid B is more dispensed, and the etching amount is increased in the front and rear end portions F and the left and right end portions G of the base material sheet A. Therefore, the thickness of the copper foil D of the base material sheet A is corrected. The base sheet A is uniformly etched in the above-mentioned region 13 by the front and rear stalk portions F, the left and right end portions G, and the center portion Η to uniformize the thickness of the copper foil D. Therefore, the body 4 of the squeezing device 3 is used. The etching formation is averaged. (9) Further, the thickness of the copper foil D of the base sheet is uniformized, and the etching is averaged by adding the additional region 13' to the upstream side of the etching apparatus 3 to concentrate the etching of the base sheet a before the rear end The part f and the left and right end parts G can be realized. Further, this region 13 is provided with a plurality of injection pipes 14 and 15' attached to the injection nozzles 16, 17 and controlled by a pump 25 or a solenoid valve 24. Thus, the etching apparatus 3 can easily achieve etching averaging by a simple configuration. (10) Further, in the case where only the left and right end portions G of the base material sheet A are observed, the thickness of the copper foil D in the entire etching apparatus 1 is adjusted as compared with the previous example as in the above-mentioned eighth embodiment. As in the present invention, in the region 13 on the upstream side of the body 4, it is more practical to collectively adjust the thickness of the copper foil d. In other words, the thickness of the copper foil D of the central portion Η and the left and right end portions G can be more reliably -34 - 1280990. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a plan explanatory view showing an example of an embodiment of the etching apparatus for a plated substrate according to the present invention, in which a preferred embodiment of the invention is provided, and (2) A plane illustration of an example. Fig. 2 is a front view showing an example of the best mode for carrying out the above invention, (1) an injection pipe for the front and rear end portions (the injection pipe disposed on the upper side), and (2) front and rear ends of the figure. The front view of another example of the injection pipe (the injection φ pipe disposed on the upper side), and (3) the front view of the injection pipe (the injection pipe disposed on the upper side) for the left and right end portions of the drawing. (4) The figure is a front (side) cross-sectional view of the base plate before etching, (5) a plan view of the base plate, and (6) a front (side) cross-section of the base plate after concentrated etching. (7) The drawing is a plan view of the above base plate. Fig. 3 is a view showing the best mode for carrying out the above invention, (1) a block diagram for drawing control, (2) a front explanatory view of the plating apparatus, and (3) an enlarged view of an important part thereof. . φ Fig. 4 is a front explanatory view of the body of the etching apparatus. Fig. 5 is a plan explanatory view of the body of the etching apparatus. Figure 6 is a side elevational view of the body of the etching apparatus. Fig. 7 is a view showing important parts of the main body of the etching apparatus, (1) a front sectional view of the drawing, (2) another positive sectional view of the drawing, (3) a side view of the drawing, and (4) a plan view of the drawing. Fig. 8 is a view showing an etching apparatus of the prior art, (1) a plan explanatory view of an example thereof, and (2) a plan explanatory view of another example. -35- 1280990 Fig. 9 is a schematic plan view of a circuit board (base board). [Explanation of component symbols] 1··· Etching device (previous example) 2. ··Jet tube (previous example) 3··· Etching device (present invention) 4. . . Ontology 5·. · Room 6. . . Conveyor belt φ 7. . . Spray nozzle 8. . . Transfer roller 9. . . Limiting the roller 10. . . Spray pipe 1 1...tank 1 2...pipe 1 3 . . . Area 14. . Spray tube (invention) 015···ejection tube (invention) 16···jet nozzle (invention) 17··. Spray nozzle (invention) 18. . . Plating tank 1 9... hanging enough 2 0 . . . Sensor 2 1. . . Controller 22... Input section -36 - 1280990 23. . . Inverter 24. . . Solenoid valve 2 5...Chestnut A. . . Base plate B. . . Etching solution C . . . Insulation layer D. . . Copper box E...electric mine φ F. . . Front and rear end parts G. . . Left and right ends H. . . Central Department J. . . Direction of movement K. . . Width direction L . . . Circuit board Μ . . . Circuit Ν. . . Through hole 0Ρ. . . Spray zone Q. . . Up and down direction α. . . Spray angle
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