TWI275092B - A novel underlayer for high performance magnetic tunneling junction MRAM - Google Patents

Abstract

An MRAM structure is disclosed in which the bottom electrode has an amorphous TaN capping layer to consistently provide smooth and dense growth for AFM, pinned, tunnel barrier, and free layers in an overlying MTJ. Unlike a conventional Ta capping layer, TaN is oxidation resistant and has high resistivity to avoid shunting of a sense current caused by redeposition of the capping layer on the sidewalls of the tunnel barrier layer. Alternatively, the alpha-TaN layer is the seed layer in the MTJ. Furthermore, the seed layer may be a composite layer comprised of a NiCr, NiFe, or NiFeCr layer on the alpha-TaN layer. An alpha-TaN capping layer or seed layer can also be used in a TMR read head. An MTJ formed on an alpha-TaN capping layer has a high MR ratio, high Vb, and a RA similar to results obtained from MTJs based on an optimized Ta capping layer.

Description

1275092 IX. Description of the Invention: [Technical Field] The present invention relates to a high performance magnetic tunneling junction element and a method of fabricating the same, and more particularly to a magnetic tunneling connection for use in a magnetic random access memory device The surface element, wherein the magnetic perforating junction element utilizes a seed layer as a cover layer for the lower electrode. [Prior Art]

A conventional magnetic random access memory device is formed by using a set of parallel second conductive line arrays to be crossed on another set of parallel first conductive line arrays, which is a method for designing a cross point, and by two arrays Each intersection formed by the intersection of the wires is a 5-way tunneling junction element, wherein the first wire is a word line and the second wire is a bit line, and vice versa, or first When the wire is the electrode below the segment line, the S wire may be one of the bit line or the word line. Usually, a transistor, a diode and other structures are connected under the first conductive line array, and a conductive layer is additionally added above the second conductive array, and the conductive layer may be a secondary word line. Or an array of secondary bit lines. As shown in the first figure, based on the tunneling magneto-resistance (TMR) effect, the conventional magnetic tunneling junction element (1) is a non-magnetic dielectric layer separating two strong ferromagnetic layers. Stacked layered structure. In the magnetic random access memory device, the magnetic tunneling junction element 1 is formed between the lower electrode 2 and the upper electrode 9, wherein the lower electrode 2 can be a segmented first wire, and the upper electrode 9 can be The second wire. The electrode 2 usually has a structure of a crystalline layer/conductive layer/cover layer, such as molybdenum/copper/giant or nickel-chromium/iridium/giant, while in the magnetic tunneling junction element 1, the lower electrode 3 is usually composed of a structure consisting of one or more crystal layers, which may be composed of nickel-iron-chromium, nickel-iron, nickel-chromium, giant/nickel-iron-chromium, bismuth/nickel-iron or molybdenum/chrome, and such a layer promotes an overlay The medium lattice has a phase property of <111>. Immediately formed is an antiferromagnetic pinned layer 4, which may be composed of manganese vanadium or lanthanum manganese, and a ferromagnetic pinned layer 5 of a multi-layered cobalt iron structure is formed on the antiferromagnetic pinned layer 4, and a group is referred to as A multilayer structure of an electric substance tunneling barrier layer 6 is overlaid on the ferromagnetic pinned layer 5. The common material of this layer is alumina, and above the tunneling barrier layer 6, a ferromagnetic free layer 7 is covered. The composition of the layer is cobalt iron and nickel iron, or both of the above, and the upper surface layer structure of the magnetic tunneling junction element 1 is composed of one or more layers of the cover layer 8, such a stack The structure of the magnetic tunneling junction element 1 is also referred to as a bottom rotary valve structure. In addition to the above structure, a magnetic tunneling junction element may also be composed of a bottom-to-top seed layer, a free layer, a tunneling barrier layer, a fixed layer, an antiferromagnetic layer, and a cap layer. The structure of the stacked magnetic tunneling junction element 1 is referred to as a top rotary valve structure. 1275092

The above-mentioned ferromagnetic pinned layer 5 and its adjacent antiferromagnetic pinned layer 4 both have a magnetic moment in the X direction due to exchange coupling, and the ferromagnetic free layer 7 also has a magnetic moment 'the directivity of the magnetic moment is parallel Or anti-parallel (that is, along the direction of the X coordinate axis) in the direction of the magnetic moment of the above fixed layer. The thickness of the tunneling barrier layer 6 is so thin that the current flowing through the layer can be conducted using quantum mechanical tunneling conduction electrons. The magnetic moment of the ferromagnetic free layer 7 changes with the external magnetic field, and the relative directivity between the two magnetic moments of the ferromagnetic free layer 7 and the fixed layer (including the antiferromagnetic fixed layer 4 and the ferromagnetic fixed layer 5) The tunneling current through the tunnel junction and its impedance will be determined. When a detection current is transmitted downward from the upper electrode 9 in a direction perpendicular to the magnetic tunnel junction layer to the lower electrode 3, if the ferromagnetic free layer 7 and the fixed layer (including the antiferromagnetic fixed layer 4 and the ferromagnetic fixed layer) 5) The magnetic direction is parallel (referred to as "Γ memory state"), and the above-mentioned tunneling mask is detected to have a lower resistance 値, and vice versa, if the ferromagnetic free layer 7 and the fixed layer (including anti-iron) The magnetic pinned layer 4 and the ferromagnetic pinned layer 5) are anti-parallel to the magnetic direction (referred to as a "zero" memory state), and the above-mentioned tunneling mask is detected to have a higher resistance 値. When the information in the magnetic random access memory 15 is taken, the detection current is input from the top of the magnetic tunneling junction element 1, and the current is transmitted to the bottom in a direction perpendicular to the layer plane, thereby detecting the magnetic property. The magnetic state (impedance level) of the tunnel junction element 1 is used for the purpose of reading information. When writing information to the magnetic random access memory, the ferromagnetic free layer is changed by manufacturing an external magnetic field. Magnetic state, which enables it to be transformed into one a magnetic field state to provide a current between a one-dimensional line and a word line of two intersecting conductive lines above or below the magnetic tunneling junction element 1. In some specific magnetic random access memories, The upper and lower electrodes are involved in the process of reading and writing. A magnetic random access memory device with good performance should have a high magnetoresistance ratio, wherein the magnetoresistance ratio is defined by changing the iron. After the magnetic state of the magnetic free layer, the observed maximum impedance change amount (dR) is the ratio of the molecule 'and the observed minimum impedance (R) of the entire magnetic tunnel junction device 1 is the denominator. Obtaining satisfactory characteristics, such as a high magnetoresistance ratio 値 and a high breakdown voltage (Vb), the tunneling barrier layer 6 needs to have good smoothness itself and requires tight packing on the structure, for example, with < 111: The antiferromagnetic pinned layer 4 and the ferromagnetic pinned layer 5. As described above, the structure of the antiferromagnetic pinned layer 4 and the ferromagnetic pinned layer 5 is usually made of molybdenum, nickel chrome 'nickel Iron chrome or other similar composition The seed layer is provided. However, when the molybdenum layer is to be grown on the nickel/nickel-iron-chromium layer, it is quite sensitive to the initial surface conditions. For example, the group may be the phase layer or the pulse phase. Layer, but if U-nickel-chromium or nickel-iron-chromium is used as the material, both of them can grow a smooth buffer rail just constructed on the oxidized layer of the amorphous phase, but if you want to The thick nickel-chromium or nickel-iron-chromium seed layer on the surface of the giant layer may sometimes cause inconsistencies in the length of the seed layer due to the structure of the molybdenum layer itself, resulting in a performance of 1270092 for each device. The related technology applied in the stacking structure of the magnetic tunneling component rail, using the giant layer as the seed layer to promote the growth of the rail track, has been weep in the US Patent No. 6,144,719纡11^&16 6,144,719), in addition, related to the structure of the magnetic random access memory, a giant seed layer is formed on the lateral electrode formed by the giant nitrogen material, and is connected with the word line. Related Art, to disclose in U.S. Patent No. 6,518,588 (US Patent 6,51) 8,588).

The second figure shows a magnetic tunneling junction element 1 having a lower electrode 2 and an upper electrode 9 in the magnetic random access memory cell 15, as described above, wherein the magnetic tunneling junction The element 1 is formed on and coplanar with a first insulating layer 11, and the upper electrode 9 is formed on and coplanar with a second insulating layer 12, and the upper conductive layer 9 and a superposed third conductive layer 14 are stacked. There is a third insulating layer B, which may be a word line or a bit line. From a general-to-detail perspective view (not shown), the multilayer magnetic tunneling junction element 1 is positioned in an array formed by a plurality of lower electrodes 2 and a plurality of upper electrodes 9 in. From the perspective of the diversity phase of the giant layer itself (pulse or enthalpy), when the molybdenum layer is a bismuth structure, it will form a tetragonal molybdenum on a non-phased substrate such as an alumina substrate. The seed layer and the impedance are formed in the core of the body, and when the giant layer is a pulse structure, it is formed on the body-centered cubic crystal layer of chromium, tungsten or titanium tungsten. The giant crystal layer has a lower impedance 値, which is about the zigzag to the wind force. However, in the lower electrode latch, which is generally made of nickel chrome/铑/molybdenum, the molybdenum layer is Low-impedance 讣 pulse structure. When manufacturing the magnetic tunneling junction component rail, it will be removed by engraving in the cover layer and the area not to be preserved. The upper portion of the electrode latch is deposited over the sidewalls la, lb of the magnetic tunnel junction element rail, and the sidewall region includes a region that penetrates the barrier layer 6. This is redeposited on the tunnel barrier layer 6 The giant material on the sidewall has a high conductivity, so that the input detection current occurs around the tunneling barrier layer 6. The flow phenomenon, which is the main problem of the magnetic tunneling junction element 1. Therefore, it is the most urgent need to cover the lower electrode 2 with a high-impedance coating layer. What is further considered is a conventional lower electrode. The giant overburden layer on 2, because the giant electrode is susceptible to oxidation, and the oxide formed on the ruthenium cap layer must be removed in the in-situ pre-cleaning process before the deposition of the magnetic tunneling junction element 1 is deposited. The oxide, such as a sputtering etch or an ion beam etch, to provide a contact surface having excellent electrical properties. However, the addition of this cumbersome pre-cleaning process requires a significant amount of time to form the magnetic tunneling junction element 1 When the seed layer is formed, such as a nickel-chromium seed layer, it is still very sensitive to the requirements of the surface condition of the giant layer after the pre-cleaning treatment. Therefore, on the cover layer of the lower electrode 2, it is extremely necessary to provide for formation. Consistent seed layer and removal of heavy pre-cleaning conditions for improvement. 1275092

In addition to being applied to magnetic random access memory, the magnetic tunneling junction element 1 having a thin tunneling barrier layer 6 and a very low product of resistance and area can also be applied to tunneling magnetoresistive reading. The magnetic sensor in the head 20 is taken. As shown in the third figure, this is a structure in which a portion of the substrate 21 is tunneled through the magnetoresistive read head on the air floating plane, and a 5-way tunneling junction member 23 is formed on the lower guide bow 22 And the lower guide bow 30, wherein the lower guide 22 is a bottom shield (S1湎 upper guide 30 is a top shield (S2). The stacked layered structure of the magnetic tunneling interface element 23 is guided by The cymbal 22 is stacked upward in order to form the seed layer 24, the antiferromagnetic layer 25, the fixed layer 26, the tunneling barrier layer 27, the free layer 28, and the cap layer 29, and the magnetic properties applied to the magnetic random access memory. The layered structure of the tunneling junction elements is similar, and the corresponding layers have similar functions. Generally, the guide 22 is a nickel-iron/giant structure, and the upper guide 30 is a 钌/巨/ nickel-iron structure (about 2 microns), and the molybdenum coating on the lower guide 22 has the same characteristic requirements as the giant cover layer covering the lower electrode 2 in the magnetic random access memory 15 For example, for the formation of a smooth, highly uniform superposition layer in the magnetic tunnel junction stack structure, the formation of molybdenum oxide And the problem of redepositing molybdenum on the sidewall of the tunneling barrier layer 27 is also present in the tunneling magnetoresistive sensing device. In the reading operation, the z-direction is moved along the air-floating surface. The read head is passed over a recording medium which causes an external magnetic field to affect the magnetic direction on the free layer 28. A nickel-chromium/niobium/nickel is disclosed in U.S. Patent No. 6,703,654 (U.S. Patent No. 6,703,654). Chromium is a magnetoelectric random access memory having a lower electrode structure, and a high melting point metal such as ruthenium, osmium or iridium is used as an intermediate conductive layer of the lower electrode to reduce the particle size to smooth the surface of the electrode. There is also an increase in the performance of the superimposed layer of the magnetic tunneling junction element. It is shown in U.S. Patent No. 6,538,324 (U.S. Patent No. 6,538,324) that the formation of a large nitrogen layer is a crystallization or an amorphous phase is determined by the conditions of its plasma deposition. A crystallized molybdenum nitride film has good adhesion to the copper layer, and a non-phased giant nitrogen structure provides a better diffusion barrier layer. The copper layer is formed in the double layer structure, wherein its The upper part is a crystallized molybdenum-nitrogen layer, and the lower part is a non-phased molybdenum-nitrogen layer. The U.S. Patent No. 6,473,336 (U.S. Patent No. 6,473,336) discloses a molybdenum nitride barrier layer between a cell plane and a tunneling magnetic element. In order to prevent the diffusion of metal. However, it is not disclosed in this patent that the composition of the molybdenum nitride layer is either amorphous or crystallized, but it is indicated that the seed layer is made of silver, palladium, molybdenum, titanium or The chrome is used to control the crystal phase and crystallinity in the magnetic tunnel junction stack structure. · US Patent No. 6,704,220 (U.S. Patent 6,704,220), the first magnetic layer in a memory cell contains a large nitrogen A seed layer is formed to prevent rusting of the first conductive line below it. However, it is not stated in this patent that the molybdenum-nitrogen layer should be unphased, nor does it provide a means of forming this indium nitride layer. 1275092 SUMMARY OF THE INVENTION The primary object of the present invention is to provide a cover layer for use in an electrode under a magnetic random access memory or for use under a tunneling magnetoresistive read head for providing The magnetic tunneling junction elements can have consistent growth conditions. This overcoat layer has a high impedance and does not require a heavy pre-cleaning process before the magnetic tunneling junction elements are deposited. Another object of the present invention is to provide a phaseless seed layer which allows the subsequently formed layered structure to have good smoothness and to make the stacked structure grow tightly, and subsequently formed in the magnetic tunneling junction element. The layered structure includes an antiferromagnetic layer, a fixed layer, and a tunneling barrier layer. Still another object of the present invention is a method of fabricating a magnetic random access memory structure based on the above-described cladding layer and amorphous phase seed layer. According to the technology disclosed in the present invention, a magnetic random access memory formed by attaching to a substrate can be realized, and an important feature is formed on the pedestal by a seed layer/conductive layer/cover layer. The lower electrode is then covered with a coating layer of amorphous nitrogen, which promotes the smooth growth and close stacking of the layered structure in the subsequently formed magnetic tunneling junction element, and the above-mentioned amorphous phase molybdenum nitride layer is preferably In order to obtain a layer of α-molybdenum nitrogen by reactive sputtering using argon/nitrogen plasma, the more common sputtering method is DC magnetron sputtering or RF magnetron sputtering. The nitrogen content in the α-钽 nitrogen layer is usually between 25 and 35 atomic percent, and the preferred nitrogen content is 30 atomic percent. In a more preferred embodiment, the structure of the lower electrode is nickel chromium/ruthenium/α-macro nitrogen or nickel chromium/copper/α-molybdenum nitrogen. The magnetic tunneling junction component is composed of a plurality of layered structures stacked on the lower electrode. According to a specific embodiment of the present invention, the magnetic tunneling layer consisting of a seed layer, an antiferromagnetic layer, a synthetic antiparallel fixed layer, a tunneling barrier layer, a free layer and a cover layer is sequentially provided. The structure of the surface element S is called the bottom rotary valve structure, wherein the material of the seed layer is nickel chrome, and the material of the antiferromagnetic layer is one of manganese vanadium or lanthanum manganese, and the antiparallel fixed layer is synthesized. It is a sandwich structure sandwiched between two cobalt-iron layers, and the tunnel barrier layer is composed of an oxidized aluminum layer, and a nickel-iron layer or a cobalt-iron layer is formed on the tunnel barrier layer. The free layer formed by the upper nickel-iron layer, as for the top layer of the magnetic tunneling junction element, is preferably a tantalum layer or a giant layer. All of the above-mentioned layered structures in the magnetic tunneling junction elements are formed by sputtering or ion beam deposition, and the oxidation of the aluminum layer is achieved by natural oxidation or radical oxidation. According to the conventional order defined by the shape of the magnetic tunneling junction element, a first insulating layer is formed adjacent to the magnetic tunneling junction element, and then an upper electrode is formed. 12 1275092 Another embodiment of the present invention It is stated that the material of the lower electrode is composed of giant/copper, nickel-chromium/copper or nickel-chromium/iridium, and the structure of the cover layer is not required. In the magnetic tunneling junction element, the seed layer on the upper electrode is a preferred choice in addition to the α-macrozide layer described in the previous embodiment, and α-molybdenum nitrogen/nickel chromium, α may also be used. - Giant nitrogen/nickel iron or giant nitrogen/nickel iron chromium is the seed layer of the composition. The remaining layered structure in the magnetic tunneling junction element is no different from the first embodiment described above. Another embodiment of the present invention discloses a structure in which a bottom portion of a tunneling magnetoresistive reading head is shielded by ferronickel and has no cover layer. At the bottom of the magnetic tunneling junction element, there is a bottom layer of the seed layer with α-diazo, cx-diazo/nickel-chromium or α-diazo/nickel-iron chromium and the remaining layered layer The structure is also the same as the first implementation described above. [Embodiment] Β The invention combines an α-major nitrogen layer into a magnetic tunneling junction design, and the α-macro nitrogen layer is used in a magnetic random access memory and a tunneling magnetoresistive read head. So that the superposed layer structure in the magnetic tunnel junction can be smoothly and stacked closely. The application provided in the drawings is a partial application mode, and does not limit the scope of the patent of the present invention. Although the figure only mentions the bottom rotary valve structure in the magnetic tunneling interface element, actually, The invention is also applicable to prior art magnetic tunneling junction elements having a top rotary valve configuration or a dual rotary valve configuration. The structure of the magnetic random access memory constructed in accordance with the first embodiment will not be described herein. The magnetic random access memory shown in the fourth figure, the partial cross section of the body comprises a substrate 41, which may be a tantalum material or other semiconductor material substrate containing an electromorphic body or a diode in the prior art. Located on the substrate 41, there is a seed layer 42 / conductive layer 43 / cover layer 44 under the electrode 45, and is coplanar with an insulating layer (not shown). The well-known magnetic random access memory structure can be divided into a plurality of lower electrodes 45 formed in the first conductive layer, and a plurality of bit lines or word lines formed on the second conductive layer in parallel. The upper electrode 54 is located above the lower electrode 45, and the magnetic tunneling interface element is formed at the intersection of all the upper electrode 54 and the lower electrode 45 between the first and second conductive layers. The lower electrode 45 can be of a particular shape, for example, it can be a rectangle with a x-y plane extending the thickness of the extension. Alternatively, the lower electrode 45 may be a bit line (or word line) aligned at right angles to the word line (or bit line) of the upper electrode 54. Between the lower electrode 45 and the upper electrode 54, there is an insulating layer 53 separating the two. 1275092 In the first embodiment, the lower electrode 45 has a structure of nickel chromium/germanium/α-diazo or nickel-chromium/copper/α-diazo, and is seeded with a seed layer 42/conductive layer 43/cover layer. 44 is a structure in which a seed layer 42 composed of nickel-chromium having a thickness of 40 to 100 angstroms is in contact with the substrate 41. The conductive layer 43 over the seed layer 42 is a tantalum or copper layer having a thickness of 50 to 1000 angstroms. Reference is made to US Pat. The seed layer 42 and the conductive layer 43 described above are generally formed by sputtering or ion beam deposition methods well known in the art. One of the key components in the lower electrode 45 is a cap layer 44 composed of oc-macro nitrogen, which is formed by depositing an α-molybdenum nitride layer on the conductive layer 43 by a reactive sputtering process, and the reaction used. The sputtering process consists of a high-energy nitrogen-containing plasma, such as an argon/nitrogen mixture, impacting the molybdenum standard, and using a DC magnetron sputtering machine or an RF magnetron sputtering machine in conjunction with the process. The ideal thickness of the cover layer 44 is between 50 and 400 angstroms, and the nitrogen content of the bulk nitrogen layer should be controlled between 25 and 35 atomic percent, with a nitrogen content of 30 atomic percent being the best recommendation. The lower electrode 45 may be composed of a molybdenum seed layer 42/copper conductive layer 43/α-molybdenum nitride coating layer in addition to the above composition, and the seed layer 42 and the conductive layer 43 are still sputtered or ionized. The beam deposition method is sequentially formed on the substrate 41. In this composition, the ideal thickness of the α-molybdenum nitride coating layer is also in the range of 50 to 400 angstroms, and the method of manufacturing the same is the same as the coating layer 44 of the above composition. In the present invention, the 〇t-molybdenum nitride coating layer is substituted for the molybdenum coating layer of the prior art, which has many advantages. First, the oxidation reaction of the α-molybdenum nitride layer is not as severe as that of the pure macrolayer, so that it is not necessary to apply a cumbersome pre-cleaning step before the layered stacked structure of the magnetic tunneling junction is deposited. Second, the α-macro-nitride layer can stably provide the smoothness required for the sequential growth of the magnetic tunneling junction layer structure, and the stack structure can be closely arranged. Other advantages will be apparent when the invention is described below. The layered stacked structure of the magnetic tunneling junction can be formed on the lower electrode 45 by using a method used when forming the lower electrode 45. For example, both the lower electrode 45 and the magnetic tunneling junction layer stack structure can be utilized. The Anelva 7100 system, or other similar systems that contain ultra-high vacuum DC magnetron plating chambers and oxidation chambers. In general, the sputter deposition process requires a argon-sputtering gas and a plurality of low-voltage discharge cathodes, and a single vacuum process is first performed on the sputter deposition system to perform the lower electrode 45 and magnetic wear. The deposition of the stacking structure of the tunnel face layer can increase the yield of the process. In an embodiment, the magnetic tunnel junction layer stack structure is based on the seed layer 46, the antiferromagnetic layer,

11 1275092 A synthetic anti-parallel fixed layer, a tunneling barrier layer, a free layer, and a capping layer are sequentially formed on the lower electrode 45, wherein the seed layer 46 has a thickness of 40 to 100 angstroms and a chromium content of 35 to 45 The atomic percentage of nickel-chromium composition is the most recommended, although nickel-iron or nickel-iron-chromium is also an effective seed layer composition. Since the seed layer 46 is formed on the α-macro-nitride layer 44, it has a flat and compact <111> seed layer structure. The inventors of the present invention have attempted to deposit a nickel-chromium seed layer on the amorphous phase molybdenum layer with reference to the patent HT03-025/031. It is found that a smooth and closely packed seed layer 46 is followed by a magnetic tunneling junction layer. Whether the stacked structure can have a critical factor of smoothness and tight stacking. The above-mentioned antiferromagnetic layer is suggested to be a mixture with the vanadium and the thickness is preferably between 80 and 200 angstroms, but the antiferromagnetic layer composed of lanthanum having a thickness of 50 to 100 angstroms is also an acceptable structure. . The synthetic anti-parallel fixed layer 48 is preferably composed of ΑΡ2/钌/ΑΡ1, and the ΑΡ2 layer is formed of the cobalt-iron layer formed on the antiferromagnetic layer 47 and having a thickness of 15 to 30 angstroms. The magnetic moment is fixed in a direction parallel to the ΑΡ1 layer. Since both the ΑΡ2 layer and the ΑΡ1 layer belong to the structure having the magnetic moment, the magnetic moment direction in the synthetic anti-parallel fixed layer 48 is caused by the slight difference in thickness between the two layers. The insertion of a coupling layer between the ΑΡ2 layer and the ΑΡ1 layer makes the exchange coupling of the two layers easier, and the thickness of the coupling layer is preferably 7.5 angstroms, and the recommended raw material is 钌. The above-mentioned layer 1 is in the embodiment using a cobalt iron composition layer having an iron content of 25 to 50 atomic percent and a thickness of 1 to 25 angstroms. In addition, the ruthenium 1 layer may also be used in the two cobalt iron. The sandwich layer of iron oxide or cobalt iron oxide of a thin layer of nano oxide is sandwiched between the layers, and the nano oxide layer is used to improve the smoothness of the six (7) layer. On the synthetic anti-parallel fixed layer 48, it is a tunneling barrier layer 49 of a thin layer of oxidized aluminum, wherein the oxygen content in the oxidized aluminum layer is close to the stoichiometric ratio of aluminum oxide. It is called Α|0χ. Initially, a thick layer of 7 to 10 angstroms was deposited on the synthetic antiparallel fixed layer 48, and this thick aluminum layer was oxidized by an in situ free radical oxidation reaction. The radical oxidation reaction process can be applied to a plasma oxidation process, as described in the related patent application of the Headway Technologies, ΗΤ03-022, for the purpose of performing a grid process in a chamber in which an oxidation reaction is carried out. A mesh cover is placed between the upper ionizing electrode and the surface of the aluminum substrate to perform an oxidation reaction of the aluminum layer. Finally, after the radical oxidation reaction of the aluminum layer is completed, an oxidized aluminum layer is formed, which has a desired thickness of 10 to 15 angstroms, and since a smooth and end-stacked seed layer 46 has been previously formed on the α-diazo On the cover layer 44, the oxidized aluminum layer formed at this time also has a relatively good smoothness and flatness. A nickel-iron free layer 50 having a thickness of 25 to 60 angstroms is formed on the tunneling barrier layer 49, and 12 1275092 is overlaid on the free layer 50 with a covering layer 51 composed of tantalum or giant. The thickness of 51 is generally between 60 and 250 angstroms. Also, since an α-molybdenum nitride coating layer 44 has been previously formed on the lower electrode 45, the subsequent layered stack of all magnetic tunneling junctions has a good smoothness and a compact structure.

A magnetic tunneling junction element is patterned on the cover layer 51 by a first coating and a width of the photoresist layer 52, and then formed into a pattern having sidewalls and an upper surface, and then a photoresist layer is used. The mask etching is performed such that portions of the magnetic tunneling junction element that are not protected by the mask are removed from the seed layer 46 to the cover layer 51 by etching, thereby forming a cover layer 51 having oblique sidewalls and a width w. And a magnetic tunneling junction element having a bottom width wider than w of the seed layer 46 structure. It is noted that since the conventional lower electrode uses molybdenum as the material of the cover layer, the molybdenum cover layer is not protected by the photoresist layer during the mask etching, and is directly exposed to the entire mask etching process. Etching liquid, so that after the molybdenum coating layer is etched, it is again deposited on the sidewall of the magnetic tunneling junction element, especially the giant deposition on the sidewall of the tunnel barrier layer, which causes the detection current to be shunted here. As a result, the entire device is subject to serious problems. However, in the present invention, the α-germanium nitride coating layer 44 is used, which is not protected by the photoresist layer during the mask etching, and is the same throughout the mask etching process. Also for the case of direct exposure to the etchant, however, in some cases only the monazide layer will occur in partial etching, although it will be deposited again on the sidewall of the magnetic tunneling junction element. High resistance characteristics, so the redeposited 0^-molybdenum nitrogen layer does not affect the input detection current (ls 'fifth figure), so the α-macrozide layer is used as the magnetic tunneling of the cladding layer 44. Connecting elements can be effective Free shunt problems generated during the process step of etching the deposited material re-triggered. On the α-macro-nitride layer 44, an insulating layer 53 is wrapped around the sidewall of the magnetic tunneling junction member. As shown in FIG. 5, the formation of the insulating layer 53 is conventionally known as an insulating material. The deposition method is deposited and then coplanar with the magnetic tunneling junction element upper surface 51a in a coplanarization step. In order to form a magnetic random access memory, after the deposition of the insulating layer 53 is completed, the upper electrode 54 is placed on the upper surface of the magnetic tunneling surface 51a. The vertical direction of the lower electrode 45, for example, if the lower electrode 45 is a bit line (or word line) facing the x coordinate axis, then the upper electrode 54 should be placed on the y coordinate axis. Line (or bit line). Optionally, the electrode is a specific segment of a right angle shape. In addition, the composition of the upper electrode 54 may be a multi-layer structure, such as a structure including a diffusion barrier layer and a conductive layer thereon, in a production method that is compatible with the prior art. The magnetic random access memory array as shown in the sixth figure is composed of four magnetic random access memories, four 13 1275092 magnetic tunneling junction elements, two lower electrodes and two upper electrodes. In this exemplary embodiment, when the lower electrode 45 is in the y direction and has a length and the word line has a b width in the x direction, the upper electrode 54 is in the X direction and has a certain length, and in the y direction. A bit line having a v-width, which is well known, 'the four upper electrodes 54 are each separated by a second insulating layer 58 but are coplanar between the two' and may have a magnetic tunneling junction element Coplanar insulating layers (not shown) have the same dielectric species. Each of the layers of the upper surface 51 a of each of the magnetic tunneling junction elements and the layer of the magnetic tunneling junction elements below has a elliptical shape with a major axis length w and a minor axis length a, wherein the long axis Usually, the axis of easy magnetization is such that the width v of the upper electrode 54 in the magnetic tunneling junction element is longer than the longer axial length w, and the width b of the lower electrode 45 is shorter than the shorter axial length a. An experiment has been used to determine the performance of a magnetic tunneling junction element that forms a molybdenum nitride coating on the lower electrode. The target of the control group in this experiment is only modified with a molybdenum layer as the coating on the lower electrode, and the rest. Both of them are similar in structure to the magnetic random access memory used in the above experiments, and the control group is subjected to special pre-cleaning treatment to avoid the problem of poor uniformity of lamellar structure growth, and at the same time, the removal and redeposition on the sidewalls is achieved. The purpose of molybdenum oxide. The results of the experiment are shown in Table 1, which shows that the magnetoresistance ratio, the resistive area (RA), and the resulting resistivity (RA) are not optimized even if the electrode crucible is not optimized for the nickel-chromium/niobium/α-molybdenum-nitrogen structure used in the present invention. The standard deviation of the impedance area (RA sigma) and the breakdown voltage are very similar to those obtained by the optimized Ni-Cr/钌/钽 structure lower electrode. From the number in Table 1, it can be confirmed that the α-macro-nitride layer proposed in the present invention can surely allow the layered stacked structure superimposed in the magnetic tunneling junction member to grow well. Therefore, the α-molybdenum nitride coating layer of the present invention provides many advantages that are not possible with the prior art lower electrode coating layer, including high electrical resistance, high oxidation resistance, and good formation of a magnetic tunneling junction element stack structure. The traits. Table shows the magnetic characteristics of the electrode/magnetic tunneling junction element stack structure. The lower electrode//5-type tunneling junction element stack dR/R (%) RA (ohm-um2) RA sigma Vb (Volts) V50 (mV ) 1 Nickel chrome / elk / / nickel chrome / Ming iron / 钌 / cobalt iron / Ming oxide fiber iron / 钌 48 3568 10% 1.63 703 2 nickel chrome / 钌 / α - molybdenum / / nickel chrome /雠八/铭铁/钉/铭铁/铭氧化/明铁/铁铁/ 钌45 3628 11% 1.61 639 Aluminium oxide is a compound with atomic weight close to Αΐ2〇3, expressed as 127 127 127 127 127 127 127 127 In the seventh embodiment, a second embodiment of the present invention is illustrated. The magnetic random access memory structure 40 is a sandwich structure in which a magnetic tunneling junction element is interposed between the lower electrode 55 and an upper electrode 54. . The composition of the Fe random access gH memory structure 40 is similar to that described in the first embodiment, but the magnetic random access memory structure has no cover layer structure, and the magnetic wear therein The seed layer in the tunnel face element is composed of α-molybdenum nitrogen. Referring to the seventh figure, the lower electrode 55 is composed of a crystal layer 42 and a conductive layer 43 superimposed thereon, and the thickness and composition of the crystal layer 42 and the conductive layer 43 are the same as those described above, for example, the lower electrode. The 55 series is a structure composed of nickel chrome/iridium, nickel chrome/copper or molybdenum/copper, and it is noted that the cover layer composed of bismuth or copper on the lower electrode is easier than the conventional overburden layer. Cleaning. However, other lower electrodes having a cap layer structure are also acceptable, although in this embodiment the lower electrodes do not need to be provided with a cover layer structure. A more flexible lower electrode selection is provided in the second embodiment because the alpha-molybdenum nitride seed layer has isolated the effect of the lower electrode on the layered stack of magnetic tunneling junction elements. A magnetic tunneling junction element layer structure is formed on the lower electrode 55 in the order of the seed layer 56, the antiferromagnetic layer 47, the synthetic anti-planar fixing layer 48, the tunneling barrier layer 49, the free layer 50, and the cap layer 51. on. A key type is a seed layer 56 structure composed of α-macro nitrogen, which is formed in the same manner as described in the previous paragraph, and has a desired thickness of 50 to 400 angstroms, and functions to cause subsequent magnetic tunneling. The junction element layered stack structure can have a good smoothness and a closely packed structure. Compared with the conventional molybdenum seed layer, the α-macrozene seed layer can make the layered stack of magnetic tunneling junction elements which are subsequently superposed grow smooth and compact, because the conventional molybdenum seed layer will form different phases. Molybdenum and cause inconsistencies in the layered structure. Alternatively, the seed layer 56 may have a thickness of 50 to 400 angstroms - the molybdenum nitride layer is the bottommost structure, and is covered with nickel chrome, ferronickel or ferronickel having a thickness of 40 to 1 angstrom. Layered structure. In this embodiment, the composition and thickness conditions of the other layered structures in the five-way tunneling junction elements are the same as those described in the first embodiment. Therefore, in the use of photoresist patterning and implementation of the mask uranium engraving At the same time, the oblique side wall and the upper surface 51a are also formed. Typically, the seed layer 56 has a width greater than the width of the cover layer 56, and the insulating layer 53 is adjacent to and coplanar with the upper surface 51a of the magnetic tunneling junction member. An upper electrode 54 is formed on the insulating layer 53 as in the previous embodiment, and is in contact with the upper surface 51a. In addition, one or more insulating layers and conductive layers are formed over the upper electrode 54 to complete the structure 40 of the magnetic random access memory. The advantages of the second embodiment are very similar to those of the first embodiment. Compared with the conventional molybdenum seed layer, a seed layer composed of ?-niobium nitrogen can provide a high magnetoresistance ratio and enable subsequent generation. The layered structure has a high degree of consistency. 15 1275092 In a third embodiment, a 5-inch read head 60 is here a tunnel having a magnetic tunneling junction member sandwiched between a bottom shield (S1) 65 and a top shield (S2) 75. The magnetoresistive read head structure, the cover layer of the bottom shield is composed of α-diazo. Although only a magnetic tunneling junction member having a bottom rotary valve configuration is mentioned in this exemplary embodiment, the invention is also applicable to a magnetic tunneling junction member having a top rotary valve.

The substrate 61 may be a composition of aluminum-titanium carbon, and the bottom shield 65 formed on the substrate 61 is an important component composed of a layer structure of nickel iron/α-molybdenum nitrogen, wherein the thickness is about 2 μm. The ferronickel magnetic layer 62 is the main portion of the bottom shield 65, and the other portion of the α-molybdenum nitrogen material cover layer 64 is formed on the magnetic layer 62 by the aforementioned method, and has a thickness of 50 to 400 angstroms. . The α-macrozide cap layer can promote the layered structure of the subsequent magnetic tunneling junction to be smooth and tightly packed, and the magnetic tunneling junction can be made due to its oxidation resistance and oxidation ability compared with the conventional molybdenum coating layer. The superimposed layered structure is consistent. A magnetic tunneling layered stack is formed on the bottom shield 65 by conventional methods, and this conventional method will not be described here. The magnetic tunneling junction layer stack is formed in the bottom layer according to the order of the seed layer 66, the antiferromagnetic layer 67, the synthetic antiparallel fixed layer 68, the tunneling barrier layer 69, the free layer 70 and the cover layer 71. 65 on. Although nickel iron or nickel iron chromium is also an effective seed layer structure, the crystal layer 66 is a nickel chromium layer having a thickness of 40 to 100 angstroms and a chromium content of 35 to 45 atom%. Since the seed layer 66 is formed on the α-molybdenum nitride coating layer, it has a smooth and compact <111> seed layer structure. In the superimposed layered structure of the magnetic tunneling junction, the smooth and compact seed layer 66 is a decisive factor. The antiferromagnetic layer 67 is preferably composed of manganese vanadium having a thickness of 80 to 200 angstroms or yttrium manganese having a thickness of 50 to 100 angstroms. The synthetic anti-parallel fixed layer 68 is suggested to be a structure of ΑΡ2/钌/ΑΡ1, wherein the ΑΡ2 layer is formed on the antiferromagnetic layer of cobalt iron, the iron content is between 10 and 25 atomic percent, and the thickness is between 15 and 25 angstroms. . Since both the ΑΡ2 layer and the ΑΡ1 layer belong to a structure having a magnetic moment, and the two magnetic moments cause a net magnetic moment due to the slight difference in thickness between the two, the direction of the magnetic moment in the synthetic anti-parallel fixed layer 68 is one. The net magnetic moment is determined. There is a coupling layer between the ΑΡ2 layer and the ΑΡ1 layer, and the thickness of the coupling layer is preferably 7.5 angstroms, and the recommended raw material is 钌. The above-mentioned layer 1 is in the embodiment using a cobalt iron composition layer having an iron content of 25 to 50 atomic percent and a thickness of 20 to 30 angstroms. In addition, the ruthenium layer 1 may also be used between the two cobalt-iron layers. The sandwich structure layer of iron oxide or cobalt iron oxide having a thin layer of nano oxide is sandwiched, and the thickness of the nano oxide layer is about 5 to 6 angstroms, and is used to improve the smoothness of the layer of ruthenium.

16 1275092 On the above synthetic antiparallel fixed layer 68, it is a tunneling barrier layer 69 of a thin layer of oxidized aluminum, wherein the oxidized aluminum layer is referred to herein as a layer of germanium. A thick aluminum layer of 5 to 6 angstroms is initially deposited on the synthetic antiparallel fixed layer 68, and this thick aluminum layer is oxidized by natural oxidation reaction or in situ radical oxidation reaction as described above. Finally, after the oxidation of the aluminum layer is completed, an oxidized aluminum layer is formed, which has a desired thickness of 7 to 11 angstroms, and has been formed by a smooth and end-stacked seed layer 66 on the α-molybdenum nitride layer. On layer 64, the oxidized aluminum layer formed at this time also has a relatively good smoothness and flatness. A cobalt iron/nickel free layer 70 having a cobalt iron layer thickness of 5 to 15 angstroms and a nickel iron layer thickness of 20 to 40 angstroms is formed on the tunneling barrier layer 69, and the nickel iron layer is formed therein. A structure deposited on top of a cobalt iron layer. In the embodiment, the composition of the cobalt iron layer is similar to that of the above first layer, and the nickel content of the nickel iron layer is between 75 and 85 atomic percent. In the present invention, a specific embodiment of the structure of the free layer 70 in which a nano oxide layer is interposed between the cobalt iron layer and the nickel iron layer is also included. On the free layer 70, there is a cover layer 71 of a bismuth/molybdenum structure, wherein the ruthenium layer has a thickness of 10 to 30 angstroms, and a molybdenum layer having a thickness of 100 to 250 angstroms is superposed thereon. Since a ? Cui nitrogen cap layer 64 has been previously formed on the bottom shield 65, the superposed layered structure of the magnetic tunneling junction can have a fairly excellent smoothness and tight stacking. Next, the steps of photoresist generation, ion beam etching, and photoresist removal are conventionally performed to form sidewalls and upper surface 71a in the magnetic tunnel junction element. A first dielectric layer 72 composed of dialuminum trioxide having a thickness of between 1 Å and 150 Å is deposited at the bottom and along the periphery of the sidewall by chemical vapor deposition or physical vapor deposition. A first hard dielectric layer 72 is provided with a hard bias layer 73 of titanium tungsten/cobalt platinum/molybdenum, the layer having a thickness of between 200 and 400 angstroms. Thereafter, a second dielectric layer 74 composed of a di-alumina trioxide having a thickness of 150 to 250 angstroms is superposed on the hard bias layer, and after removing the photoresist mask (not shown here), The second dielectric layer 74 is planarized to be coplanar with the upper surface 71a. A top mask 75 is deposited over the upper surface 71a of the magnetic tunneling junction element and the second dielectric layer 74. The top shield 75 can be composed of giant/nickel iron and can be understood in the prior art. Achieved. The present invention proposes an α-molybdenum nitrogen coating layer having an oxidized impedance and contributing to crystal growth, and thus is more reliable than a tunneling magnetoresistive read head which is shielded at the bottom of a large cover layer. And a more stable tunneling magnetoresistive read head. In a ninth embodiment, a fourth embodiment of the present invention is illustrated. A tunneling magnetoresistive readhead structure is formed by sandwiching a magnetic tunneling junction member between a bottom shield 62 and a bottom shield 75. The method of constructing the tunneling magnetoresistance reading 17 1275092 head is similar to the foregoing embodiment, but the magnetic tunneling junction element in this embodiment has no cover layer structure, and the seed layer is a kind of α-molybdenum. It consists of giant layers. Referring to the ninth figure, the bottom shield 62 is suggested to be composed of nickel iron and has a thickness of about 2 microns. Although the bottom portion of the present invention does not require a cover layer construction, other bottom shield structures including a cover layer are also suitable for use in this embodiment. The structure of a bottom shield 62 is formed from the bottom to the top in the order of the seed layer 66, the antiferromagnetic layer 67, the synthetic back plane fixing layer 68, the tunneling barrier layer 69, the free layer 70, and the cover layer 71. A key type is a seed layer 66 structure composed of α-macro nitrogen, which is formed in the same manner as described in the previous paragraph, and its ideal thickness is between 50 and 400 angstroms, and functions to cause subsequent magnetic tunneling. The junction element layered stack structure can have a good smoothness and a closely packed structure. The α-yttrium nitrogen seed layer can make the layered stack of magnetic tunneling junction elements which are subsequently superimposed grow smooth and stacked tightly, because the conventional giant crystal layer will form different phases. It is huge and leads to inconsistencies in the layered structure. In addition, the seed layer 66 may also have a thickness of 50 to 300 angstroms, and the α-molybdenum nitride layer is the bottommost structure, and is covered with a layer of nickel chromium, nickel iron or nickel iron chromium having a thickness of 40 to 100 angstroms. Shaped structure. In this embodiment, the alpha-molybdenum nitride seed layer 66 is used to block the magnetic tunneling junction element layer structure of the subsequent stacking port from the bottom shield 62. In this embodiment, the composition and thickness conditions of the other layered structures in the magnetic tunneling junction elements are the same as those described in the third embodiment. The upper surface 71 is formed at the top end of the magnetic tunneling junction element stack structure. Generally, the seed layer 66 is wider than the cover layer 71. On the bottom shield in the magnetic tunneling junction element, as in the previous embodiment, a first dielectric layer 72 is also formed thereon. Furthermore, a hard bias layer 73 is deposited over the first dielectric layer 72, and the second dielectric layer 74 thereon is also coplanar with the upper surface 74 as in the previous embodiment. A top mask 75 is then deposited over the upper surface 71a of the magnetic tunneling junction member and the second dielectric layer 74. The top shield 75 may be comprised of molybdenum/nickel iron. The advantages in this embodiment can be understood by the advantages in the third embodiment. The present invention utilizes an alpha-diazoic layer as a cover layer for shielding at the bottom of a tunneling magnetoresistive read head or a magnetic tunneling junction by using a magnetic tunneling junction element that is shielded from the bottom of a giant cladding layer. The seed layer shielded at the bottom of the element is particularly good in terms of magneto resistance ratio, breakdown voltage, and impedance area. The embodiments described above are merely illustrative of the technical spirit and the features of the present invention, and the objects of the present invention can be understood by those skilled in the art, and the scope of the present invention cannot be limited thereto. That is, the equivalent variations or modifications made by the spirit of the present invention should still be covered by the scope of the invention. BRIEF DESCRIPTION OF THE DRAWINGS The first figure is a cross-sectional view of a magnetic tunnel junction element formed between a lower electrode and an upper electrode in a conventional magnetic random access memory structure. The second figure is an enlarged view of the wall surface having a slope in the magnetic tunneling junction member of the first figure and the insulating layer adjacent to the upper electrode. The third figure is a cross-sectional view of a conventional tunneling magnetoresistive readhead in which a magnetic tunneling junction element is formed between the bottom shield and the top shield as an inductor. Fig. 4 is a partial cross-sectional view showing the magnetic random access memory of the magnetic tunneling junction member of the lower electrode covered with a pulsed large nitrogen layer in the present invention. The fifth figure is a cross-sectional view of the upper surface of the magnetic tunneling interface element after removing the photoresist etch mask and having a V insulating layer and generating an upper electrode. Fig. 6 is a top view of the magnetic tunneling junction element formed between the upper electrode and the lower electrode in the magnetic random access memory structure of Fig. 5 at an intersection. Figure 7 is a cross-sectional view showing a magnetic tunneling junction element having a pulsed macro-nitride layer structure in a magnetic random access memory structure. Figure 8 is a cross-sectional view showing the magnetic tunneling junction member of the present invention applied to the tunneling magnetoresistive read head as a sensor between the bottom shield and the top shield. Figure 9 is a partial cross-sectional view showing the magnetic random access memory of the magnetic tunneling junction member having the pulsed molybdenum nitride layer as the seed layer in the present invention. [Main component symbol description] 2 Lower electrode 4 Antiferromagnetic fixed layer 6 Tunneling barrier layer 8 Cover layer 10 Detection current 12 Second insulating layer 14 Superposed third conductive layer 1 Magnetic tunneling junction element 3 Lower electrode 5 Ferromagnetic pinned layer 7 Ferromagnetic free layer 9 Upper electrode 11 First insulating layer 13 Third insulating layer 15 Magnetic random access memory 19 1275092 20 Tunneling magnetoresistive read head 22 Guided 24 kinds of crystal layer 26 fixed layer 28 free layer 30 lower guide 21 substrate 23 magnetic tunneling junction element 25 antiferromagnetic layer 27 tunneling barrier layer 29 cladding layer 40 part of magnetic random access memory structure 41 substrate 42 seed layer 43 conductive layer 45 Lower electrode 47 antiferromagnetic layer 49 tunneling barrier layer 51 cladding layer 52 photoresist layer 54 upper electrode

44 cover layer 46 seed layers 48 synthetic anti-parallel fixed layer 50 free layer 51a upper surface 53 insulating layer 55 lower electrode 56 seed layer 58 second conductive layer 60 magnetic read head 61 substrate 62 magnetic layer 64 cover layer 65 bottom shield

66 kinds of crystal layers 68 synthetic anti-parallel fixed layer 70 free layer 71a upper surface 73 hard bias layer 75 top mask 67 antiferromagnetic layer 69 tunneling barrier layer 71 cover layer 72 first dielectric layer 74 second dielectric layer 20

Claims (1)

1275092 X. Patent Application Range·· L ~ The magnetic random access memory (MRAM) structure formed on a substrate, including (8) a lower electrode, which comprises a seed layer formed on the substrate and a a conductive layer formed on the seed layer, the conductive layer having an α-macro nitrogen cap layer; (b) an upper electrode composed of a conductive line and located above the lower electrode; (6) a magnetic tunneling junction member having a plurality of sidewalls and an upper surface formed between the lower electrode and the upper electrode, the magnetic tunneling junction member comprising a crystal layer in contact with the lower electrode, An antiferromagnetic pinned layer, a pinned layer, a tunneling barrier layer, a free layer, and a cap layer in contact with the upper electrode. 2. The magnetic random access memory structure according to claim 1, wherein the lower electrode has a seed layer composed of nickel chromium and a conductive layer composed of tantalum or copper. 3. The magnetic random access memory structure of claim 2, wherein the thickness of the layer is between 40 and 1 〇〇, and the thickness of the conductive layer is between 50 and 1000 The thickness of the α-macro-nitride layer in the conductive layer is between 50 and 400 angstroms, and the nitrogen content in the α-macro-nitride layer is between 25 and 35 atomic percent. 4. The magnetic random access memory structure according to claim 1, wherein the lower electrode has a seed layer composed of molybdenum and a conductive layer composed of copper. 5. The magnetic random access memory structure of claim 4, wherein the thickness of the layer is between 20 and 100 angstroms, and the thickness of the conductive layer is between 50 and 1000 angstroms, and The thickness of the core-macro-nitride layer in the conductive layer is between 50 and 400 angstroms. 6. The magnetic random access memory structure of claim 1, wherein the seed layer in the magnetic tunneling junction element is one of nickel chromium, nickel iron or nickel iron chromium. It consists of a thickness of 40 to 100 angstroms. 7. The magnetic random access memory structure according to claim 1, wherein the antiferromagnetic fixed layer is composed of manganese vanadium or strontium manganese. 8. The magnetic random access memory structure according to claim 1, wherein the fixed layer is a synthetic anti-parallel structure, and the first and second cobalt iron layers are interposed between the dielectric layers. 9. The magnetic random access memory structure of claim 1, wherein the pass-through barrier layer is an aluminum oxide layer and has a thickness of between 10 and 15 angstroms. 10. The magnetic random access memory structure of claim 1, wherein the free layer is composed of ferronickel. 21 1275092 ιι. A magnetic random access memory structure formed on a substrate, comprising: (8) a lower electrode comprising a seed layer formed on the substrate and a conductive layer formed on the seed layer; (6) an upper electrode composed of a conductive line and located above the lower electrode; and (c) a magnetic tunneling junction element having a structure having a plurality of side walls and an upper surface, Between the lower electrode and the upper electrode, an α-macrozene seed layer is in contact with the lower electrode, and an anti-ferromagnetic pinned layer, a fixed layer, and a tunneling layer are formed on the α-macrozene seed layer A barrier layer, a free layer, and a capping layer are sequentially formed to form the magnetic tunneling junction element, and the capping layer is in contact with the upper electrode. 12. The magnetic random access memory structure of claim 11, wherein the lower electrode layer comprises a giant or nickel chromium seed layer and a copper conductive layer. 13. The magnetic random access memory structure of claim 11, wherein the lower electrode layer comprises a nickel-chromium seed layer and a tantalum or copper conductive layer. 14. The magnetic random access memory structure according to claim 11, wherein the magnetic tunneling junction element is an alpha-niobium nitride layer having a thickness of 40 to 100 angstroms and a nitrogen content. The system is between 25 and 35 atomic percent. 15. The magnetic random access memory structure of claim 11, wherein the seed layer in the magnetic tunneling junction element comprises an alpha-germanium nitrogen underlayer and a nickel-chromium, nickel A composite layer of iron or nickel-iron-chromium top layer. 16. The magnetic random access memory structure of claim 15, wherein the alpha-molybdenum nitrogen underlayer has a thickness of between 50 and 400 angstroms and the top layer has a thickness of between 40 and 100 angstroms. 17. The magnetic random access memory structure according to claim 11, wherein the antiferromagnetic fixed layer is composed of a mammoth or a scorpion. 18. The magnetic random access memory structure according to claim 11, wherein the fixed layer is a synthetic anti-parallel structure, and the first and second cobalt-iron layers are interposed between the dielectric layers. 19. The magnetic random access memory structure of claim 11, wherein the tunneling barrier layer is an aluminum oxide layer and has a thickness of between 10 and 15 angstroms. 20. The magnetic random access memory structure of claim 11, wherein the free layer is comprised of ferronickel. 21. A tunneling magnetoresistive (TMR) read head formed on a substrate, comprising: (8) a bottom shield comprising a magnetic layer formed on one of the substrates and an alpha-macro formed on the conductive layer a nitrogen capping layer; 22 1275092 (b) - a magnetic tunneling junction element having a plurality of sidewalls formed on the bottom shield, the magnetic tunneling junction element comprising a layer of crystal on the bottom shield, an anti-iron a magnetic pinned layer, a pinned layer, a tunneling barrier layer, a free layer, and an upper cap layer having an upper surface; and (c) a top mask formed on the upper surface of the upper cap layer on. The tunneling magnetoresistive read head according to claim 21, wherein the thickness of the α-molybdenum nitride coating layer is between 50 and 400 angstroms, and the nitrogen content in the α-macro nitrogen coating layer is Between 25 and 35 atomic percent. The tunneling magnetoresistive read head of claim 21, wherein the seed layer in the magnetic tunneling junction element is nickel chromium, nickel iron or nickel iron chromium. 24. The tunneling magnetoresistive read head according to claim 21, wherein the antiferromagnetic fixed layer is composed of manganese hunger and has a thickness of 80 to 200 angstroms or consists of lanthanum manganese. And its thickness is between 50 and 100 angstroms. Β 25. The tamper-evident 5-inch resistive read head of claim 21, wherein the fixed layer has a synthetic anti-parallel (SyAP) structure interposed between the first and second cobalt-iron layers. The composition of the dielectric layer. The tunneling magnetoresistive read head of claim 21, wherein the tunneling barrier layer is an aluminum oxide layer' and has a thickness of between 7 and 11 angstroms. 27. The tunneling magnetoresistive read head of claim 21, wherein the free layer is a composite layer comprising a layer of nickel iron formed on the cobalt iron layer. 28. A tunneling magnetoresistive readhead formed on a substrate, comprising: (a) a bottom shield formed by a magnetic layer formed on the substrate; (b) - a magnetic wear junction An element having a plurality of sidewalls formed on the bottom shield, the magnetic tunneling component having a seed layer composed of α-molybdenum nitrogen shielded by the bottom, an antiferromagnetic fixed layer, and a fixing a layer, a tunneling barrier layer, a free layer, and an upper cladding layer having an upper surface; and (c) a top mask formed on the upper surface of the upper cladding layer. 29. The tunneling magnetoresistive read head according to claim 28, wherein the seed layer of the core macronuclear layer has a thickness of 50 to 400 angstroms, and the nitrogen in the α-molybdenum nitride coating layer The content is between 25 and 35 atomic percent. 30. The tunneling magnetoresistive read head of claim 28, wherein the seed layer in the magnetic tunneling junction element is a composite layer comprising a giant nitrogen bottom layer and a nickel chromium layer, The top layer of the nickel iron layer or the nickel iron chromium layer. 31. The tunneling magnetoresistive read head of claim 30, wherein the arbor layer has a thickness of between 50 and 300 angstroms and the top layer has a thickness of between 40 and 100 angstroms. The tunneling magnetoresistive read head of claim 28, wherein the antiferromagnetic fixed layer is composed of manganese or manganese. 33. The tunneling magnetoresistive read head of claim 28, wherein the fixed layer is a synthetic anti-parallel structure, and the first and second cobalt iron layers are interposed between the dielectric layers. The tunneling magnetoresistive read head of claim 28, wherein the tunneling barrier layer is an aluminum oxide layer having a thickness of between 7 and 11 angstroms. 35. The tunneling magnetoresistive read head of claim 28, wherein the free layer is a composite layer comprising a layer of nickel iron formed on the layer of iron. 36. A method of forming a magnetic random access memory structure on a substrate, the steps comprising: (a) forming a lower electrode comprising a seed layer on the substrate, a conductive layer on the seed layer, and an alpha-macrozide cap layer on the conductive layer; (b) Forming a magnetic tunneling junction member having a plurality of sidewalls and an upper surface; and (c) forming an upper electrode on the upper surface of the magnetic tunneling junction member. 37. The method of claim 36, wherein the alpha-macro-nitride layer has a thickness between 50 and 400 angstroms and a nitrogen content of between 25 and 35 atomic percent. 38. The method of claim 36, wherein the seed layer is a nickel-chromium composition having a thickness of 40 to 100 angstroms, and the conductive layer is composed of tantalum or copper and has a thickness of 50 To 1 〇〇〇. 39. The method of claim 36, wherein the seed layer is giant and has a thickness between 20 and 100 angstroms, and the conductive layer is composed of copper and has a thickness of between 50 and 1000 angstroms. 40. The method of claim 37, wherein the alpha-molybdenum nitrogen blanket is formed by a reactive sputtering process comprising a nitrogen plasma. 41. The method of claim 36, wherein the magnetic tunneling junction element is a layered stack comprising a seed layer of nickel chromium, nickel iron or nickel iron chromium. 42. A method of forming a magnetic random access memory structure on a substrate, the steps comprising: (8) forming a lower electrode comprising a seed layer on the substrate and a conductive layer on the seed layer; b) forming, on the lower electrode, a magnetic tunneling junction member having a plurality of sidewalls and an upper surface structure, wherein the magnetic tunneling junction member has a seed layer under the α-macro nitrogen composition; c) forming an upper electrode on the upper surface of the magnetic tunneling junction element. The method of claim 42, wherein the thickness of the α-basic nitrogen seed layer is between 50 and 400 angstroms and the nitrogen content is between 25 and 35 atomic percent. 44. The method of claim 42, wherein the α-molybdenum nitrogen seed layer is a composite layer having a top layer composed of nickel chromium, nickel iron or nickel iron chromium, the thickness of which is Between 40 and 100 angstroms, and an alpha-diazo bottom layer having a thickness of between 50 and 400 angstroms. 45. The method of claim 42, wherein the alpha-molybdenum nitrogen seed layer is formed by a reactive sputtering process comprising a nitrogen plasma. 46. A method of forming a tunneling magnetoresistive (TMR) readhead on a substrate, the steps comprising: (8) forming a bottom mask formed by a magnetic layer on the substrate, and the magnetic layer is An alpha-macro nitrogen blanket; P(b) is formed on the bottom shield to form a magnetic tunneling junction member having an upper surface and a plurality of sidewalls; and (c) on the magnetic tunneling junction member A top shield is formed on the surface. 47. The method of claim 46, wherein the alpha-molybdenum nitride coating layer has a thickness between 50 and 400 angstroms and a nitrogen content of between 25 and 35 atomic percent. The method of claim 46, wherein the magnetic tunneling junction element has a bottom layer which is a crystal layer and the crystal layer is nickel chromium, nickel iron or nickel iron chromium Composed of. 49. The method of claim 46, wherein the magnetic layer is the only nickel iron layer having a thickness of about 2 microns. 50. The method of claim 47, wherein the alpha-macro-nitride layer is formed by a reactive plating process comprising a nitrogen plasma. Φ 51· A method of forming a tunneling magnetoresistive readhead on a substrate, the steps comprising: (8) forming a * bottom mask, which is composed of a layer on a substrate; (b) Forming a magnetic perforating junction element having a plurality of sidewalls and an upper surface structure, and forming a seed layer of α-macro nitrogen in the magnetic tunneling junction element on the bottom shield; And (c) forming a top shield on the upper surface of the magnetic tunneling junction element. 52. The method of claim 51, wherein the thickness of the seed layer of the alpha-macro nitrogen is between 5 and 4 angstroms and the nitrogen content is between 25 and 35 atomic percent. 53. The method of claim 51, wherein the seed layer is a composite layer comprising a giant nitrogen base layer having a thickness of 50 to 3 angstroms and a top layer of nickel A chromium layer, a nickel iron layer or a nickel iron chromium layer having a thickness of 4 to 1 angstrom. The method of claim 51, wherein the magnetic layer is a nickel iron layer having a thickness of about 2 microns. 55. The method of claim 52, wherein the alpha-macro-nitride layer is formed by a reactive sputtering process comprising a nitrogen plasma. 26