TWI274618B - Method for fine tuning circuit and controlling impedance with laser process - Google Patents

Method for fine tuning circuit and controlling impedance with laser process Download PDF

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TWI274618B
TWI274618B TW94127717A TW94127717A TWI274618B TW I274618 B TWI274618 B TW I274618B TW 94127717 A TW94127717 A TW 94127717A TW 94127717 A TW94127717 A TW 94127717A TW I274618 B TWI274618 B TW I274618B
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laser
laser processing
impedance
laser process
target
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TW94127717A
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TW200706292A (en
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Yi-Hsi Chen
Chih-Chuan Lin
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Apac Optoelectronics Inc
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Abstract

A method for actively controlling he fine-tuning and impedance matching using a laser process is provided, including the use of a laser process equipment, a monitor device, and a feedback controller. The laser process equipment is for performing laser soldering or laser etching. The monitor device is for monitoring the target metrics of the target circuits. The feedback controller is for receiving the feedback from the monitor device and issuing control signals to the laser process equipment. The method includes the following steps: (a) loading the target high frequency circuit to the laser process equipment for laser process; (b) monitoring the impedance of the circuit or the transmission/reflection signals and outputting a measured value; (c) determining whether the measured value equal to target value, computing an error signal as the difference between measured value and target value; if not, sending control signals to laser process equipment according to the error signal and proceeding to step (d), otherwise, proceeding to step (e); (d) performing the laser process on the target circuit according to the control signal, returning to step (c); and (e) unloading the target high frequency circuit from the laser process equipment.

Description

1274618 九、發明說明: 【發明所屬之技術領域】 本發明係有關一種高頻電路調整之方法,尤指一種使 用雷射技術於微調高頻電路與阻抗匹配之方法。 【先前技術】1274618 IX. Description of the Invention: [Technical Field] The present invention relates to a method for adjusting a high frequency circuit, and more particularly to a method for finely adjusting a high frequency circuit and impedance matching using a laser technique. [Prior Art]

在高頻電路中,阻抗匹配對於傳輸訊號的品質有決定 ι±的影響。電蘭阻抗乃是針對特定頻率所產生的訊號傳 輸或反射的影響。當高頻時的訊綠是面臨阻抗不匹配的 6形時,其訊號之相位或振幅皆可能失真,甚至產生時域 上之失真。冑而言之,阻抗匹配決定了訊號的傳輸是否達 到目標品質’其傳ii訊號是否可靠。此現象在高頻時尤其 重要’例如,光通訊的相關產品。 初一倥脰或无二極體的封裝體積較大,而且在 大體積時因焊接所產生的差異較難控制,對於阻抗匹配亦 產生不良影響,尤其當操作頻率高於2.5Gbps時。美國專 利4, 381,441揭露一細修薄膜電阻以決定其電阻值之方法。 另—方面,雷射技術被廣泛應用於許多半導體製程, 例如’雷射焊接(Laser s〇ldering)與雷射餘刻如· ⑽㈣。糾焊接為—高精密、高麵性、高彈性之加 工方式。其最大優點在於能將其熱力集中。另_方面,雷 d: 6 I274618 射蝕刻為一環保、高彈性、低成本的加工方式。美國專利 5, 742, 025揭露一方法採用雷射技術於彈性電路板製成上。 由於阻抗匹配對咼頻應用極為重要,因此有必要發展 -主動且互動式之阻抗匹g己方法,其可應雜精密高頻線 路。由於雷射技術極為精密,如何將雷射技術應用於高頻 線路之微調與阻抗匹配,實為一重要課題。 > 【發明内容】 本發明之主要目的乃在於提供一種可用於高頻電路微 調與阻抗匹配控制之方法。為達此目的,本發明首揭一方 法採用透過直接測量訊號的方式,以雷射技術加以微調修 整,以達阻抗匹配的目的。 本發明之雷射加工之電路調整及阻抗控制之方法,係 使用-雷射加工設備、-監測裝置、及一回饋控制器。該 丨雷射加工設備係用於進行雷射焊接或雷射蝕刻。本發明之 雷射加工設備並不限定於任何特定形式,例如,可為高功 率之二極體或Nd:YAG/ Nd:YV04雷射或其倍頻雷射。該監 貝J衣置係用於監測該電路之一電氣特性,例如,阻抗戋气 號傳輸與反射值。本發明之監測裝置並不限定於任何特定 形式,例如,可為阻抗測量表。該回饋控制器係用於接受 邊監測裝置之訊號並產生控制訊號以控制該雷射加工設備 7 1274618 的雷射製程。本發日狀回饋控继秘定於任何特定形 式,例如,可為一個人電腦(pc)。 本發明之雷射加工之電路調整及阻抗控制之方法包含 下列步驟:⑷將高頻電路置於該雷射加工設備上,⑹監 測該高頻電路之阻抗值,並輪出難抗值,⑹決定該阻 抗值是否達到目標阻抗值,計算其差異值,若已達目標值, 則進行至(e)步驟,否則’根據該差異值送出控制訊號至該 雷射加工設備’並進行⑷步驟,⑷根據該控制訊號進行 田射加工’並回到(c)步驟,及⑹將該線路自該雷射加工 設備取出,完成此製程。 為其能對本發明之目的、功效及構造特徵有更詳盡明 確的瞭解’ I峰可實施例併配合圖示說明如後: 【實施方式】 請參考第一圖。第一圖所示為本發明之雷射加工之電 路。周整及阻k控制之方法所使用之主動式雷射加 工糸統之 不思圖,包含:一雷射加工設備110、一監測裝置120、及 一回饋控制器13〇。該雷射加工設備u〇係用於進行雷射焊 接或雷射餘刻。本發明之雷射加工設備u〇並不限定於任 何特定形式,例如,可為高功率之二極體或Nd:YAG/ Nd:YV04雷射或其倍頻雷射。該監測裝置120係用於監測該 兒路之一電氣特性,例如,阻抗或訊號傳輸與反射值。本 1274618 發明之監測裝置120並不限定於任何特定形式,例如,可 為阻抗測量表。該回饋控制器13〇係用於接受該監測装置 之訊號並產生控制訊號以控制該雷射加工設備ιι〇的雷射 製程。本發明之回饋控制130並不限定於任何特定形式, 例如,可為一個人電腦(pC)。 當—高頻電路m被置人系統内進行雷射加工,糾In high-frequency circuits, impedance matching has a decisive influence on the quality of the transmitted signal. The ohmic impedance is the effect of signal transmission or reflection on a particular frequency. When the green at high frequencies is a 6-shaped impedance mismatch, the phase or amplitude of the signal may be distorted and even cause distortion in the time domain. In other words, impedance matching determines whether the transmission of the signal reaches the target quality. This phenomenon is especially important at high frequencies, for example, related products for optical communication. The package size of the first or second diode is large, and the difference caused by soldering at large volume is difficult to control, which also has an adverse effect on impedance matching, especially when the operating frequency is higher than 2.5 Gbps. U.S. Patent 4,381,441 discloses a method of modifying the sheet resistance to determine its resistance. On the other hand, laser technology is widely used in many semiconductor processes, such as 'Laser s〇ldering' and laser remnants such as (10) (4). The welding is a high-precision, high-surface, high-elastic processing method. Its biggest advantage is its ability to concentrate its heat. Another _ aspect, Lei d: 6 I274618 Shot etching is an environmentally friendly, highly flexible, low-cost processing method. U.S. Patent 5,742,025 discloses a method of using laser technology for the fabrication of flexible circuit boards. Since impedance matching is extremely important for frequency-frequency applications, it is necessary to develop an active and interactive impedance method that can accommodate sophisticated high-frequency lines. Due to the extremely precise laser technology, how to apply laser technology to the fine-tuning and impedance matching of high-frequency lines is an important issue. SUMMARY OF THE INVENTION The main object of the present invention is to provide a method that can be used for high frequency circuit trimming and impedance matching control. To achieve this goal, the first method of the present invention uses a direct measurement signal to fine-tune the laser to achieve impedance matching. The method of circuit adjustment and impedance control of the laser processing of the present invention uses a laser processing apparatus, a monitoring device, and a feedback controller. The laser processing equipment is used for laser welding or laser etching. The laser processing apparatus of the present invention is not limited to any particular form, and may be, for example, a high power diode or a Nd:YAG/Nd:YV04 laser or a frequency doubling laser thereof. The monitor is used to monitor the electrical characteristics of one of the circuits, such as impedance 戋 gas transmission and reflection values. The monitoring device of the present invention is not limited to any particular form, and may be, for example, an impedance measuring meter. The feedback controller is configured to receive the signal from the side monitoring device and generate a control signal to control the laser process of the laser processing device 7 1274618. The daily feedback control is fixed in any particular form, for example, a personal computer (pc). The method for circuit adjustment and impedance control of the laser processing of the present invention comprises the following steps: (4) placing a high frequency circuit on the laser processing device, (6) monitoring the impedance value of the high frequency circuit, and rotating the hard resistance value, (6) Determining whether the impedance value reaches the target impedance value, and calculating the difference value. If the target value has been reached, proceed to step (e), otherwise, 'send control signal to the laser processing device according to the difference value' and perform step (4), (4) performing field processing according to the control signal and returning to step (c), and (6) taking the line out of the laser processing apparatus to complete the process. For a more detailed understanding of the object, function and structural features of the present invention, the embodiment can be described with reference to the following: [Embodiment] Please refer to the first figure. The first figure shows the laser processing circuit of the present invention. The active laser processing system used in the method of peripheral and k-control includes a laser processing apparatus 110, a monitoring device 120, and a feedback controller 13A. The laser processing equipment is used for laser welding or laser remanufacturing. The laser processing apparatus of the present invention is not limited to any particular form, and may be, for example, a high power diode or a Nd:YAG/Nd:YV04 laser or a frequency doubling laser thereof. The monitoring device 120 is used to monitor electrical characteristics of one of the circuits, such as impedance or signal transmission and reflection values. The monitoring device 120 of the present invention is not limited to any particular form, and may be, for example, an impedance measuring meter. The feedback controller 13 is configured to receive signals from the monitoring device and generate control signals to control the laser processing of the laser processing device. The feedback control 130 of the present invention is not limited to any particular form, and may be, for example, a personal computer (pC). When the high-frequency circuit m is placed in the system for laser processing, correct

職請進行監測該高頻電路1G1之目標訊號的= 值。若其阻抗值已達-目標阻抗值,職束本加工製輕。 反之’則根據漸所得之阻抗值與目標阻抗值之差異發出 控制訊號給該雷射加工設備11〇以進行雷射加工。重複此 監測與加工轉,直騎測得之阻抗值已達該目標阻抗 值,才結束雷射加工製程。 、該雷射加工設備110可進行雷射焊接或雷職刻。若 為雷射焊接加工,可針對高齡路上之烊料行阻抗微 謂,其控制訊號可為雷射功率、脈衝長度、點之大小、波 長及重複速率。若為雷·刻加工,可針對晶粒基座與印 刷電路板上高頻線路進行阻抗微調,其控制訊號可為尖峰 1 力率、脈衝長度、點之大小、波長及重複速率。 σ月茶考第—圖。第二圖所示為本發明之雷射加工之带 =調整及阻抗控歡方法之流《。本翻之雷射加= 2〇1 ^ 1274618 載入痛電路中,將高頻電路1Q1置於該雷射加工設備n〇 上。在步驟202之監測高頻電路的目標訊號中,該監測裝 置120監_高頻電路101之目標訊號的阻抗值,並輸出 該阻抗值。在步驟2〇3巾,檢查該阻抗值是否達到一目標 阻杬值,右已達目標阻抗值,則進行至步驟205 ;否則,計 算該測量所得之阻抗值與該目標阻抗值之差異值,根據該 差異值送出控制赠至該能加工設備。並由該雷射加工 口又備110根據該控制訊號進行雷射加工,如步驟2〇4所示。 加工後’回到步驟2G2。在步驟挪中,將該符合目標阻抗 值之痛電路自該雷射加工設備UQ取出,完成此製程。 =中,步驟202, 203, 204係、形成一重複迴路,直到該測 传之阻抗值祕該目標阻抗值為止。 步驟204中之#射加王可為雷射焊接或雷射韻刻。若 為雷射焊接加卫,可針對高頻線路上之焊料行阻抗微 调’其控制訊號可為雷射功率、脈衝長度、點之大小、波 長及重複速率。於本發明之較佳實補巾,雷射功率約為 10w ’其關可為5W〜5QW。雌長度約為n,其範圍可 為2〇ms-2s。點之直徑大小約為。,5咖,其範圍可為 1mm 1mm。波長為8〇8nm或1〇64nm。重複速率可為⑶ 或約為1’,其範圍約為cw_5〇kHz。Please check the = value of the target signal of the high frequency circuit 1G1. If the impedance value has reached the target impedance value, the job beam processing system is light. Otherwise, a control signal is sent to the laser processing apparatus 11 for laser processing based on the difference between the gradually obtained impedance value and the target impedance value. Repeat this monitoring and processing, and the impedance value of the straight ride has reached the target impedance value before the laser processing process ends. The laser processing apparatus 110 can perform laser welding or mine machining. For laser welding, it can be used for the impedance of the old-age road. The control signals can be laser power, pulse length, point size, wavelength and repetition rate. For Ray engraving, the impedance can be fine-tuned for the pedestal and the high-frequency lines on the printed circuit board. The control signals can be spike 1 force rate, pulse length, point size, wavelength, and repetition rate. σ月茶考第—图. The second figure shows the flow of the laser processing belt of the present invention = adjustment and impedance control method. The laser of the turn is added = 2〇1 ^ 1274618 In the loading pain circuit, the high frequency circuit 1Q1 is placed on the laser processing apparatus n〇. In the target signal of the monitoring high frequency circuit of step 202, the monitoring device 120 monitors the impedance value of the target signal of the high frequency circuit 101 and outputs the impedance value. In step 2〇3, check whether the impedance value reaches a target resistance value, and the right has reached the target impedance value, proceed to step 205; otherwise, calculate the difference between the measured impedance value and the target impedance value, According to the difference value, the control is sent to the processing equipment. And the laser processing port further prepares 110 for laser processing according to the control signal, as shown in step 2〇4. After processing, return to step 2G2. In the step of moving, the pain circuit conforming to the target impedance value is taken out from the laser processing apparatus UQ to complete the process. In step 202, 203, 204, a repeating loop is formed until the impedance value of the measurement is secreted to the target impedance value. The #射加王 in step 204 can be laser welding or laser rhyme. For laser welding, the impedance of the solder line on the high-frequency line can be fine-tuned. The control signals can be laser power, pulse length, point size, wavelength, and repetition rate. In the preferred embodiment of the present invention, the laser power is about 10w', which can be 5W~5QW. The female is about n in length and can range from 2 〇 ms to 2 s. The diameter of the point is approximately the same. 5 coffee, the range can be 1mm 1mm. The wavelength is 8 〇 8 nm or 1 〇 64 nm. The repetition rate can be (3) or about 1', which ranges from about cw_5 〇 kHz.

10 1274618 若為雷射餘刻加工,可針對晶粒基座與印刷電路板上 高頻線路進雜抗_,其控制職可為辨功率、脈衝 長又』之大小、波長及重複速率。於本發明之較佳實施 J大蜂功率約為1〇kW ’其範圍可為M-100kW。脈衝 長度約為10ns,其範圍可為】則〇〇助。點之直徑大小約 為〇55mm魏圍可為〇. 。波長為碰⑽或 1〇64nm。重複速率約為10kHz,其範圍約為1kHz-50kHz。 經由以上本發明之―實施例與現有之習知技術比較, 本發明有以下之優點: m:接測里的方式,以雷射技術加以微修 整,可補償製程差異,大幅改善品質,以達阻抗匹配 的目的。。 2·雷射加工製程為高精密、高彈性之加工製程,且符合 低成本與環保之要求。 因此,本發明之一種雷射加工之電路調整及阻抗控制 之方法,確能藉_露之技藝,達騎職之目的與功效, 付合發明專利之新穎性,進步性與《儀性之要件。 淮以上所揭露之圖示及說明,僅為本發明之較佳實 方也例而已’非為用以限定本發明之實施,大凡熟悉該項技 *之人士其所依本發明之精神,所作之變化或修飾,皆應 涵蓋在以下本案之中請專利範圍内。 1274618 【圖式簡單說明】 第一圖為本發明之雷射加工之電路調整及阻抗控制之方法 所使用之主動式雷射加工系統之示意圖。 第二圖為本發明之雷射加工之電路調整及阻抗控制之方法 之流程圖。 【主要元件符號說明】 101 南頻電路 10 雷射加工設備 120 監測裝置 130 回饋控制器10 1274618 For laser engraving, it can be used for the high-frequency line on the die base and the printed circuit board. The control position can be the power, pulse length, wavelength and repetition rate. In a preferred embodiment of the invention, the J. bee power is about 1 〇 kW' and can range from M to 100 kW. The pulse length is about 10 ns, and the range can be 〇〇. The diameter of the point is about 〇55mm Wei Wei can be 〇. The wavelength is touch (10) or 1 〇 64 nm. The repetition rate is approximately 10 kHz and ranges from approximately 1 kHz to 50 kHz. Through the above embodiments of the present invention, compared with the prior art, the present invention has the following advantages: m: the method in the measurement, micro-trimming by laser technology, can compensate for process differences, and greatly improve the quality. The purpose of impedance matching. . 2. The laser processing process is a high-precision, high-elastic processing process that meets the requirements of low cost and environmental protection. Therefore, the method for circuit adjustment and impedance control of the laser processing of the present invention can truly utilize the skill of the dew to achieve the purpose and effect of the riding, and to pay for the novelty, advancement and succinct requirements of the invention patent. . The illustrations and descriptions disclosed in the above are merely preferred embodiments of the invention, and are not intended to limit the implementation of the invention, and those skilled in the art are in accordance with the spirit of the invention. Changes or modifications shall be covered in the scope of the patents listed below. 1274618 BRIEF DESCRIPTION OF THE DRAWINGS The first figure is a schematic diagram of an active laser processing system used in the method of circuit adjustment and impedance control of laser processing of the present invention. The second figure is a flow chart of the method for circuit adjustment and impedance control of the laser processing of the present invention. [Main component symbol description] 101 Southern frequency circuit 10 Laser processing equipment 120 Monitoring device 130 Feedback controller

Claims (1)

1274618 / 十、申請專利範圍: , 1.-種雷射加卫之電路調整及阻抗控制之方法,係使用一雷射 加工設備、-監測裝置、及—回鎮控制器,該方法包括: (a) 將高頻電路置於該雷射加工設備上; (b) 監測該高頻電路之阻抗值,並輸出該阻抗值; (c) 決定餘抗值是否翻目標阻抗值,計算其差異值,若 已達目K直’則進行至(e)步驟,否則,根據該差異值 • 送出控制訊號至該雷射加工設備,並進行⑷步驟; ⑷根據該控制訊號進行雷射加工,並回到(c)步驟; 及⑹將該線路自該雷射加工設備取出,完成此製程。 2. 如申請專利範圍第i項所述之方法,其中該雷射加工設備係 為一南功率之二極體雷射。 3. 如中請專利範圍第丨項所述之方法,其中該#射加工設備係 為一 Nd:YAG/ Nd:YV04雷射或其倍頻雷射。 • 4.如申請專利範圍第1項所述之方法,其中該監測裝置係為- 阻抗測量表。 5·如申請專纖圍第丨項所述之方法,其愧回镇控制器係為 一個人電腦。 6.如申請專利範圍第i項所述之方法,其中該雷射加工製程係 為雷射焊接。 7·如申請專利範圍第6項所述之方法,其中該控制信號包含雷 射功率、脈衝長度、點之大小、波長及重複逮率。1274618 / X. The scope of application for patents: 1. The method of circuit adjustment and impedance control of a laser-assisted laser is to use a laser processing equipment, a monitoring device, and a back-to-back controller. The method includes: a) placing a high frequency circuit on the laser processing equipment; (b) monitoring the impedance value of the high frequency circuit and outputting the impedance value; (c) determining whether the residual resistance value is turned over the target impedance value, and calculating the difference value If it has reached the goal, go to step (e). Otherwise, according to the difference value, send the control signal to the laser processing equipment and perform step (4); (4) perform laser processing according to the control signal, and return Go to step (c); and (6) take the line out of the laser processing equipment to complete the process. 2. The method of claim i, wherein the laser processing apparatus is a south power diode laser. 3. The method of claim 3, wherein the #shooting equipment is a Nd:YAG/Nd:YV04 laser or a frequency doubled laser thereof. 4. The method of claim 1, wherein the monitoring device is an impedance measurement meter. 5. If you apply for the method described in the section of the special fiber, the controller of the town is a personal computer. 6. The method of claim i, wherein the laser processing process is laser welding. 7. The method of claim 6, wherein the control signal comprises a laser power, a pulse length, a point size, a wavelength, and a repetition rate. 13 1274618 -/ 8.如申請專利範圍第1項所述之方法,其中該雷射加工製程係 : 為雷射蝕刻。 9.如申請專利範圍第8項所述之方法,其中該控制信號包含尖 峰功率、脈衝長度、點之大小、波長及重複速率。13 1274618 - / 8. The method of claim 1, wherein the laser processing system is laser etched. 9. The method of claim 8 wherein the control signal comprises peak power, pulse length, dot size, wavelength, and repetition rate. 1414
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI480115B (en) * 2013-03-08 2015-04-11 Univ Minghsin Sci & Tech Laser etching device and etching method thereof
TWI738558B (en) * 2020-11-03 2021-09-01 上儀股份有限公司 Laser system with reduced welding spatter and method of using the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI480115B (en) * 2013-03-08 2015-04-11 Univ Minghsin Sci & Tech Laser etching device and etching method thereof
TWI738558B (en) * 2020-11-03 2021-09-01 上儀股份有限公司 Laser system with reduced welding spatter and method of using the same

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