1266437 五、發明說明（1) 【發明所屬之技術領均^】 其由指一種之發光 本發明係有關於：種發光二極體 ,ϊΐ晶片之固晶方法及其結構。 【先前技術】 按，習用之路土 ^ 舰將时& , %九二極體之製造方法，係先使用導電銀 - ϋ舰A w i 聪日日片黏著於一基體上’該基體根據發光 一極體之形式不ρη八、 VO AJ!± 77 為 lead-frame、PCB、PLCC、LTCC或 FR4等，並以！ — QUC之溫度加熱i . 5小時，使導電銀膠定型 、而將發光二極體晶片定至於基體上。 . 請參閱第一圖，其係為習知技術之發光二極體晶片之 固晶結構示意圖；如圖所示，發光二極體晶片1 〇，係透過 一導電銀膠2 〇，以將該發光二極體晶片1 〇 ’固定於基體 30’上，如Tw專利公告編號第433553號，專利名稱：發光 二極體封裴散熱結構，其係揭示發光二極體晶片可上銀膠 予以固接，以及Τ ψ專利公告編號第4 6 3 3 9 4號，專利名稱： 晶片式發光二極體及其製造方法，其係揭示以銀膠將晶片 固定；以及7^專利公告編號第2 9 0 73 3號，專利名稱：表面 黏著發光二極體之製造方法及其產品，其所說明半導體晶 j係用銀膠固定；以及TW專利公告編號第54 1 73 1號，專利 •稱：發光二極體的封裝模組，其所說明發光二極體晶粒 係用銀膠固定在所述基板上。惟，使用膠質材料作為發光 二極體晶片之固晶接著材料，常因接著製程中之塗膠^均 造成發光二極體晶片位置不正確，且，膠質材料之導熱效 果不佳。 μ1266437 V. DESCRIPTION OF THE INVENTION (1) The technology of the invention belongs to the invention. The invention relates to a kind of light-emitting diode, a method for bonding a germanium wafer and a structure thereof. [Prior Art] Press, the customary road soil ^ ship will be & , % nine diode manufacturing method, the first use of conductive silver - ϋ A A A A A A A A A A A A A A A A A A A A A A A A The form of a polar body is not ρη8, VO AJ!± 77 is lead-frame, PCB, PLCC, LTCC or FR4, etc., and! — The temperature of the QUC is heated for 5 hours, and the conductive silver paste is shaped to fix the light-emitting diode wafer to the substrate. Please refer to the first figure, which is a schematic diagram of a solid crystal structure of a conventional LED chip; as shown in the figure, a light-emitting diode wafer 1 through a conductive silver paste 2 以The light-emitting diode chip 1 〇' is fixed on the base body 30', as disclosed in Tw Patent Publication No. 433553. The patent name is a light-emitting diode-sealed heat-dissipating structure, which discloses that the light-emitting diode chip can be solidified with silver glue. And Τ ψ Patent Publication No. 4 6 3 3 9 4, Patent Name: Wafer-type light-emitting diode and its manufacturing method, which discloses fixing a wafer with silver glue; and 7^ Patent Publication No. 2 9 0 73 No. 3, patent name: manufacturing method and product of surface-adhesive light-emitting diode, the semiconductor crystal j is fixed by silver glue; and TW Patent Publication No. 54 1 73 1 , patent • said: luminous The package module of the diode has a light-emitting diode die fixed on the substrate with silver paste. However, the use of a colloidal material as a solid-crystal bonding material for a light-emitting diode wafer often results in an incorrect position of the light-emitting diode wafer due to the subsequent application of the coating, and the thermal conductivity of the gel material is not good. μ
1266437 五、發明說明（2) 再者，發光二極體晶片係可透過一接 、 發光二極體晶片固定於基體if ;、，以將該 知技術之發光二極：第二圖，其係為習 示意圖；如圖所示料固定於基體之結構 ,c ^ 口亥么先一極體晶片1〇,係透過一錫扑 (S〇lder Ba11)40’以固定於基體2〇，上如了 23260 0號，專利名稱為發光二極體的封裝方法專一 二極體的封裝方法，至少包含 種务光 Η椤产一盆α 匕3以下步驟將一發光二極體曰 f罢封梦^ =上，使得該發光二極體晶片形成導電迴路曰，曰 覆a封虞材料於該發光二極體晶上· 丨號第533750號，專利名稱為發光二極體，告編 led元件排列安置於雷路 且八 其係揭不將 焊接β把 電板上，經過錫爐自動焊接；惟， =材枓之操作溫度皆大於21(rc以上 ： 高。、^時其結構遭雙破壞，進行造成製程不良率提 點，：發光二極體晶片之固晶結構之缺 固接之：Γ f H 焊接材料固定時需使用高溫 - 【發明内容】 固晶ΪΓ月之主要目^在於提供—種發光二極體晶片之 第—炉拉及其結構，/、係先將發光二極體晶片一側設置依 碎接層，並於一基體之一側設置—第二焊接層，利用 1266437 五、發明說明（3) 超音波將該第 低溫下即可完 本發明之 固晶方法及其 有較佳之散熱 為達上述 極體晶片之固 片與一基體進 離子化，使該 墦Is之操作條件 么么為使 功效有更進一 合詳細之說明 一焊接 成發光 次要目 結構， 效果。 所指稱 晶方法 行固晶 發光二 下，並 貴審查 步之瞭 ，說明 層與第 二極體 的，在 利用二 <各目 及其結 時，利 極體晶 為較佳 委員對 解與認 如後： 一焊接層 晶片之固 於提供一 接材料 的，本發 構，其係 用超音波 片與該基 之散熱結 本發明之 識，謹佐 之各表面離子 晶製程。 種發光二極體 之固晶方式， 明係提供 種 揭示一發光二 使一焊接彳才料 體於固接時， 構者。 結構特徵及所 以較佳之實施 化 於 晶片之 使其具 核體晶 之表面 係於低 達成之 例及配 或 € 光 溫 流 實施方式】 習知技術之發光二極 利用焊接材料以將發光;曰二f固晶方式—般使用銀膠 ，然’銀膠具有散熱；曰片固定於該-基體之 不正確之缺點，焊接 3產生發光二極體之接著位 二級體晶片高溫破壞度'高達，對發 下之製裎方、1 # 、”沾，故本羲明係提供一種於低 請參閱ΐΐ散熱性之結構。 程圖；如圖；Ut為本發明之-較佳實施例之製造 Q所不’本發明係為一種發光二極體晶片之固1266437 V. Description of the Invention (2) Further, the LED chip can be fixed to the substrate through a single-connected, light-emitting diode wafer; and the light-emitting diode of the known technology: the second figure For the schematic diagram; as shown in the figure, the material is fixed on the structure of the substrate, and the first one of the first-pole wafers is passed through a tin-bump (S〇lder Ba11) 40' to be fixed to the substrate 2〇. No. 23260 0, the patent name is the package method of the light-emitting diode. The package method of the special diode is at least included in the operation of the light Η椤 α α 以下 以下 以下 以下 以下 以下 以下 以下 以下 以下 以下 以下 以下 以下 以下 以下^ = upper, so that the light-emitting diode wafer forms a conductive loop, covering a sealing material on the light-emitting diode crystal. No. 533750, the patent name is a light-emitting diode, and the LED component is arranged. It is placed in Leilu and the Eighth System will not weld the electric plate on the electric plate. It will be automatically welded through the tin furnace. However, the operating temperature of the material is greater than 21 (rc above: high.), its structure is double damaged. Carrying out the process defect rate, the lack of solidification of the solid crystal structure of the LED chip :Γ f H The high temperature is required for the soldering material to be fixed - [Summary of the Invention] The main objective of the solid crystal ΪΓ月 is to provide the first type of furnace diode and its structure, and the first to emit the light The side of the body wafer is provided with a crushing layer, and a second soldering layer is disposed on one side of a substrate, and the solid crystal layering method of the present invention can be completed at the low temperature by using 1266437. The heat dissipation is preferably such that the solid film of the polar body wafer and the substrate are ionized, so that the operating conditions of the 墦Is are made into a more detailed description of the effect, and the welding is a secondary structure of the illuminating effect. The alleged crystal method is based on solid-crystal luminescence, and the review step is step by step, indicating that the layer and the second polar body are in the use of the two < And after the recognition: a solder layer of the wafer is fixed to provide a material, the hair structure, which uses the ultrasonic wave sheet and the heat dissipation of the base, the knowledge of the invention, and the surface ion crystal process. Solid crystal of diode In the formula, the Ming system provides a kind of illuminating light to make a soldering body into a solid state. The structural features and the preferred embodiment of the wafer are such that the surface of the nucleated crystal is low. And with or with the light temperature flow implementation method] the light-emitting diode of the prior art uses a solder material to illuminate; the f2f solid crystal method generally uses silver glue, but the 'silver glue has heat dissipation; the cymbal sheet is fixed to the base body The inaccurate shortcomings, the welding 3 produces the light-emitting diodes, the secondary body wafers, the high-temperature damage degree 'up to, the 下 之 、 , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , See ΐΐ heat dissipation structure. FIG. 1 is a manufacturing example of a preferred embodiment of the present invention. The present invention is a solid state of a light-emitting diode chip.
1266437 五、發明說明（4) 晶方法，該方法之步驟係包含：步驟S 1 0，將一發光二極 體晶片之一側設置一第一焊接層；步驟S2 0，將一基體之 一侧設置一第二焊接層；步驟S3 0，利用超音波將該第一 焊接層與該第二焊接層表面離子化，以將該第一焊接層與 該第二焊接層連接。 其中，於步驟S30中，係利用一晶片覆合機（FI ip Chip Bonder)以產生超音波，使得該第一焊接層與該第二 焊接層之表面離子化，以達到相互固接之為用者；由於使 用超音波之固接方式，所以可以在低於1 5 0°C下完成固 丨·，不會因為高溫而損壞發光二極體晶片。 請參閱第四圖至第七圖，其係為本發明之一較佳實施 例之製造流程之結構示意圖；如圖所示，本發明其係提供 一發光二極體晶片1 0，於該發光二極體晶片1 0之一側設置 一第一焊接層1 2，如第四圖所示；並於一基體2 0之一側設 置有一第二焊接層22，如第五圖所示；利用超音波之方式 使該第一焊接層1 2與第二焊接層2 2之表面離子化，請參閱 第六圖所示；最後，而使該第一焊接層1 2與第二焊接層2 2 相互固接，如第七圖所示。 其中該發光二極體晶片1 0係可為一氮化鎵系發光二極 晶片，且該基體2 0係可為選自下列形式之1 e a d - f r a m e、 PCB、PLCC、LTCC及FR4之其中之一者，且該基體20係為一 高導熱材料，其係選自於AIN、Si、Cu、A1及陶瓷之其中 之一者，該第一焊接層或第二焊接層其係選自於AuSn、 A u、I n A u、S η及S η P b之其中之一者。1266437 V. Inventive Description (4) The crystal method, the method comprises the steps of: step S10, placing a first solder layer on one side of a light-emitting diode wafer; and step S20, one side of a substrate A second solder layer is disposed; in step S30, the first solder layer and the surface of the second solder layer are ionized by ultrasonic waves to connect the first solder layer with the second solder layer. In step S30, a wafer doubling machine (FI ip Chip Bonder) is used to generate ultrasonic waves, so that the surfaces of the first solder layer and the second solder layer are ionized to achieve mutual fixation. Because of the use of the ultrasonic bonding method, it is possible to complete the solid state at less than 150 ° C without damaging the light-emitting diode wafer due to high temperature. Please refer to FIG. 4 to FIG. 7 , which are schematic structural diagrams of a manufacturing process according to a preferred embodiment of the present invention. As shown in the figure, the present invention provides a light emitting diode wafer 10 for emitting light. a first solder layer 12 is disposed on one side of the diode wafer 10, as shown in the fourth figure; and a second solder layer 22 is disposed on one side of the substrate 20, as shown in FIG. Ultrasonic wave ionizes the surface of the first solder layer 12 and the second solder layer 2 2, as shown in the sixth figure; finally, the first solder layer 12 and the second solder layer 2 2 They are fixed to each other as shown in the seventh figure. The light emitting diode chip 10 can be a gallium nitride based light emitting diode chip, and the substrate 20 can be selected from the group consisting of 1 ead-frame, PCB, PLCC, LTCC and FR4. In one case, the substrate 20 is a highly thermally conductive material selected from one of AIN, Si, Cu, A1 and ceramics, and the first solder layer or the second solder layer is selected from AuSn. One of A u , I n A u, S η and S η P b .
1266437 五、發明說明（5) 綜上所述，本發明係係利用超音波製程以將發光二極 體晶片固著於基體上，其係提供一低溫製程之固晶製程， 並具有高散熱性之結構。本發明實為一具有新穎性、進步 性及可供產業利用者，應符合我國專利法所規定之專利申 請要件無疑，爰依法提出發明專利申請，祈 鈞局早曰賜 准專利，至感為禱。 惟以上所述者，僅為本發明之一較佳實施例而已，並 非用來限定本發明實施之範圍，舉凡依本發明申請專利範 圍所述之形狀、構造、特徵及精神所為之均等變化與修 参，均應包括於本發明之申請專利範圍内。 1266437 圖式簡單說明 示 構 結 晶 固 之 片 晶 體 極 二 光 發 之 術 技 知 1 習 明為； 說係圖 單其意 簡： 式圖 圖一 Γ第 圖 圖 圖 圖 圖 圖 二 三四 五 六 七 第 第第 第丨第 第 料 材 接 焊 過 透 片 晶 體 極； 二圖 光意 發示 之構 術結 技之 知體 習基 為於 係定 其固 圖 圖 為為圖為 為 為圖 意 意 係係意係係係意 其其示其"其"其示 構 ;結 圖之 程程 流流 造造 製製 之之 ΪΠΊ JUMW 施施 實實 佳佳 -luj -UA 一 -一 之之 明明 發發 本本 構 結 之 程 流 造 製 之 例 施 實 佳 較一 之 明 發 本 構 結 之 程 流 造 製 之 例 施 實 佳 較一 之 明 發 本 及 以 構 結 之 程 流 造 製 之 例 施 實 佳 較一 之 明 發 本 【主要元件符號說明】 1 〇 ’發光二極體晶片 2 0’基體 3 0 ’導電銀膠 >4 0 ’錫球 1 0發光二極體晶片 1 2第一焊接層 20基體 2 2第二焊接層1266437 V. INSTRUCTION DESCRIPTION (5) In summary, the present invention utilizes an ultrasonic process to fix a light-emitting diode wafer to a substrate, which provides a low-temperature process solid crystal process and has high heat dissipation. The structure. The invention is a novelty, progressive and available for industrial use, and should meet the requirements of the patent application stipulated in the Patent Law of China, and the invention patent application is filed according to law, and the prayer bureau grants the patent as early as possible. prayer. However, the above description is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention, and the shapes, structures, features, and spirits described in the claims are equivalently changed. The repairs are all included in the scope of the patent application of the present invention. 1266437 The simple description of the crystal structure of the crystal crystals of the two crystals of the technique 1 Xi Mingwei; said the map is simple and simple: the figure map, the first map, the map, the map, two three four five six The seventh material is welded to the crystal pole of the first piece; the second figure is the structure of the structure, and the structure of the structure is based on the solid map. The Italian Department of the Department of the Department of the Department of the Department of the Department of the Department of the Department of the Department of the Department of the Department of the Department of the Department of the United States and its construction; the formation of the process of the flow of the process of the construction of the JUMW Shishi Shijia Jiajia-luj-UA one-one The example of the flow-through process of the construction of the book is better than that of the case of the implementation of the flow-through process.佳一一明明本 [Main component symbol description] 1 〇 'Light-emitting diode wafer 2 0' substrate 3 0 'conductive silver glue> 4 0 'tin ball 10 0 light-emitting diode wafer 1 2 first welding Layer 20 substrate 2 2 second solder layer
第10頁Page 10