CN101859826A - Fixing method and structure of light-emitting diode (LED) wafer - Google Patents
Fixing method and structure of light-emitting diode (LED) wafer Download PDFInfo
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- CN101859826A CN101859826A CN200910057041A CN200910057041A CN101859826A CN 101859826 A CN101859826 A CN 101859826A CN 200910057041 A CN200910057041 A CN 200910057041A CN 200910057041 A CN200910057041 A CN 200910057041A CN 101859826 A CN101859826 A CN 101859826A
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Abstract
The invention discloses a fixing method and a structure of a light-emitting diode (LED) wafer. The method comprises the following steps of: arranging a first welding layer at one side of an LED wafer; arranging a second welding layer at one side of a substrate; and ionizing the surfaces of the first welding layer and the second welding layer by using ultrasonic waves to enable the first welding layer and the second welding layer to be fixedly connected. The invention enables the LED wafer and the substrate which are fixedly connected to become a better heat radiating structure under the operating conditions of low temperature.
Description
Technical field
The present invention relates to a kind of die-bonding method and structure thereof of diode wafer.
Background technology
Present manufacturing method for LED, be to use the conductive silver rubber cement that LED wafer is adhered on the matrix earlier, described matrix is divided into lead-frame, PCB, PLCC, LTCC or FR4 etc. according to the form difference of light-emitting diode, and, make the conductive silver glue typing and then LED wafer is fixed on the matrix with 150 ℃ temperature heating 1.5 hours.
As shown in Figure 1, it is the solid crystal structure schematic diagram of the LED wafer of known technology; As shown in the figure, LED wafer 10 is to see through a conductive silver glue 20 described LED wafer 10 is fixed on the matrix 30, number No. 433553 as the TW patent announcement, patent name: LED package radiator structure, it discloses LED wafer and can give affixed with elargol, and the TW patent announcement is numbered patent name No. 463394: chip-type LED and manufacture method thereof, and its announcement is fixed wafer with elargol; And the TW patent announcement is numbered patent name No. 290733: surface adhering manufacturing method for LED and products thereof, and its explanation semiconductor wafer is fixed with elargol; And the TW patent announcement is numbered patent name No. 541731: the encapsulation module of light-emitting diode, its illustrated LED crystal particle is to be fixed on the described substrate with elargol.At present, use colloidal materials to follow material as the solid crystalline substance of LED wafer, often because of the gluing inequality in following causes the LED wafer malposition, and the heat-conducting effect of colloidal materials is not good.
Moreover LED wafer is fixed in described LED wafer on the matrix by a welding material, and as shown in Figure 2, it is fixed in the structural representation of matrix by welding material for the LED wafer of known technology; As shown in the figure, described LED wafer 10 is to be fixed on the matrix 20 by a tin ball (Solder Ball) 40, as TW letters patent number No. 232600, patent name is a light emitter diode seal method, " a kind of light emitter diode seal method; comprise following steps at least one LED wafer is welded on the substrate makes described LED wafer form the galvanic circle, covers encapsulating material on described LED wafer "; And the TW patent announcement numbers No. 533750, and patent name is a led lamp, and its announcement is placed in the LED element arrangements on the circuit board, welds automatically through the tin stove; At present, the operating temperature of welding material causes LED wafer its structure when high temperature to wreck all greater than more than 210 ℃, and then causes fraction defective to improve.
Shortcoming for the solid crystal structure of the LED wafer that solves known technology, colloidal materials causes heat-conducting effect difference and gluing inequality to cause the then malposition of LED wafer, or need use the affixed shortcoming of high temperature when utilizing welding material fixedly, the present invention provides a kind of low temperature can finish structure and method thereof affixed and that thermal conductivity is good.
Summary of the invention
The technical problem to be solved in the present invention provides a kind of die-bonding method of LED wafer, can finish the solid crystalline substance of LED wafer under low temperature, utilizes the solid crystal type of two welding materials simultaneously, makes it have preferable radiating effect.
For solving the problems of the technologies described above, the die-bonding method of LED wafer of the present invention comprises: a side of a LED wafer is provided with one first weld layer; One side of one matrix is provided with one second weld layer; Use ultrasonic wave with described first weld layer and the described second weld layer surface ionization, so that described first weld layer and described second weld layer is affixed.
Technique effect of the present invention is: utilize ultrasonic wave to make the surface ionization of two welding materials, make described LED wafer and described matrix when affixed, under the operating condition of low temperature, produce preferable radiator structure.
The solid crystal structure of LED wafer of the present invention comprises: a LED wafer; One first weld layer, it is arranged at a side of described LED wafer; One second weld layer, it is connected in a side of described first weld layer; One matrix, it is connected in a side of described second weld layer; Wherein, described first weld layer and described second weld layer are to see through ultrasonic wave it is interconnected.
Description of drawings
Below in conjunction with the drawings and specific embodiments the present invention is described in further detail.
Fig. 1 is the solid crystal structure schematic diagram of the LED wafer of known technology;
Fig. 2 is that the LED wafer of known technology sees through the structural representation that welding material is fixed in matrix;
Fig. 3 is the manufacturing flow chart of a preferred embodiment of the present invention;
Fig. 4 is the structural representation of the manufacturing process of a preferred embodiment of the present invention;
Fig. 5 is the structural representation of the manufacturing process of a preferred embodiment of the present invention;
Fig. 6 is the structural representation of the manufacturing process of a preferred embodiment of the present invention;
Fig. 7 is the structural representation of the manufacturing process of a preferred embodiment of the present invention.
Description of reference numerals among the figure:
10 ' is LED wafer, and 20 ' is matrix, and 30 ' is conductive silver glue, and 40 ' is the tin ball,
10 is LED wafer, and 12 is first weld layer, and 20 is matrix, and 22 is second weld layer,
Embodiment
The solid crystal type of the LED wafer of known technology generally uses elargol or utilizes welding material LED wafer is fixed on the matrix, yet, the then shortcoming of malposition that elargol has weak heat-dissipating and can produce light-emitting diode, welding material can produce temperature up to 200 ℃, the shortcoming that luminous secondary body wafer high temperature is destroyed, thus the present invention provide a kind of under low temperature method and produce the structure of high-cooling property.
See also Fig. 3, it is the manufacturing flow chart of a preferred embodiment of the present invention; As shown in the figure, the present invention is a kind of die-bonding method of LED wafer, and the step of described method comprises: step S10 is provided with one first weld layer with a side of a LED wafer; Step S20 is provided with one second weld layer with a side of a matrix; Step S30 utilizes ultrasonic wave with described first weld layer and the described second weld layer surface ionization, so that described first weld layer is connected with described second weld layer.
Wherein, in step S30, be to utilize a wafer to be laminated with machine (Flip Chip Bonder) to produce ultrasonic wave, make the surface ionization of described first weld layer and described second weld layer, to reach mutual affixed effect; Owing to use hyperacoustic affixed mode,, can not damage LED wafer because of high temperature so can finish affixedly under 150 ℃ being lower than.
See also Fig. 4 to Fig. 7, it is the structural representation of the manufacturing process of a preferred embodiment of the present invention; As shown in the figure, it provides a LED wafer 10 the present invention, in a side of described LED wafer 10 one first weld layer 12 is set, as shown in Figure 4; And be provided with one second weld layer 22 in a side of a matrix 20, as shown in Figure 5; Utilize hyperacoustic mode to make the surface ionization of described first weld layer 12 and second weld layer 22, see also shown in Figure 6; At last, and make described first weld layer 12 and second weld layer 22 affixed mutually, as shown in Figure 7.
Wherein said LED wafer 10 can be a gallium nitride light-emitting diode wafer, and described matrix 20 can be selected from following form lead-frame, PCB, PLCC, LTCC or FR4 one of them, and described matrix 20 is a highly heat-conductive material, it can be selected from AlN, Si, Cu, Al or pottery one of them, and it can be selected from one of them of AuSn, Au, InAu, Sn or SnPb described first weld layer or second weld layer.
In sum, the present invention utilizes ultrasonic wave so that LED wafer is bonded on the matrix, provides a low temperature solid brilliant, and has the structure of high-cooling property.
More than, the present invention is had been described in detail, but these are not to be construed as limiting the invention by embodiment.Under the situation that does not break away from the principle of the invention, those skilled in the art also can make many distortion and improvement, and these also should be considered as protection scope of the present invention.
Claims (10)
1. the die-bonding method of a LED wafer is characterized in that, comprising:
One side of one LED wafer is provided with one first weld layer;
One side of one matrix is provided with one second weld layer;
Use ultrasonic wave with described first weld layer and the described second weld layer surface ionization, so that described first weld layer and described second weld layer is affixed.
2. the die-bonding method of LED wafer as claimed in claim 1 is characterized in that, described ultrasonic wave is to use the wafer machine that is laminated with to produce.
3. the die-bonding method of LED wafer as claimed in claim 1 is characterized in that, when described first weld layer was connected with described second weld layer, it will be lower than 150 ℃ of operating temperatures.
4. the solid crystal structure of a LED wafer is characterized in that, comprising:
One LED wafer;
One first weld layer, it is arranged at a side of described LED wafer;
One second weld layer, it is connected in a side of described first weld layer;
One matrix, it is connected in a side of described second weld layer;
Wherein, described first weld layer and described second weld layer are to see through ultrasonic wave it is interconnected.
5. the solid crystal structure of LED wafer as claimed in claim 4 is characterized in that, described LED wafer is the gallium nitride light-emitting diode wafer.
6. the solid crystal structure of LED wafer as claimed in claim 4 is characterized in that, described first weld layer be selected from AuSn, Au, InAu, Sn or SnPb one of them.
7. the solid crystal structure of LED wafer as claimed in claim 4 is characterized in that, described second weld layer be selected from AuSn, Au, InAu, Sn or SnPb one of them.
8. the solid crystal structure of LED wafer as claimed in claim 4 is characterized in that, described matrix is to use a highly heat-conductive material.
9. the solid crystal structure of LED wafer as claimed in claim 4 is characterized in that, the material of described matrix be selected from AlN, Si, Cu, Al or pottery one of them.
10. the solid crystal structure of LED wafer as claimed in claim 4 is characterized in that, the form of described matrix is lead-frame, PCB, PLCC, LTCC or FR4.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910057041A CN101859826A (en) | 2009-04-07 | 2009-04-07 | Fixing method and structure of light-emitting diode (LED) wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910057041A CN101859826A (en) | 2009-04-07 | 2009-04-07 | Fixing method and structure of light-emitting diode (LED) wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101859826A true CN101859826A (en) | 2010-10-13 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200910057041A Pending CN101859826A (en) | 2009-04-07 | 2009-04-07 | Fixing method and structure of light-emitting diode (LED) wafer |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103094451A (en) * | 2011-11-01 | 2013-05-08 | 台湾积体电路制造股份有限公司 | LED module and method of bonding thereof |
| CN103904172A (en) * | 2014-03-19 | 2014-07-02 | 浙江竞达齐泰科技有限公司 | Method for welding LED chip to ceramic body through ultrasonic waves at normal temperature |
-
2009
- 2009-04-07 CN CN200910057041A patent/CN101859826A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103094451A (en) * | 2011-11-01 | 2013-05-08 | 台湾积体电路制造股份有限公司 | LED module and method of bonding thereof |
| CN103094451B (en) * | 2011-11-01 | 2016-07-20 | 晶元光电股份有限公司 | LED module and joint method thereof |
| CN103904172A (en) * | 2014-03-19 | 2014-07-02 | 浙江竞达齐泰科技有限公司 | Method for welding LED chip to ceramic body through ultrasonic waves at normal temperature |
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Application publication date: 20101013 |