TWI275191B - Thermal efficient package structure for high power LED - Google Patents

Thermal efficient package structure for high power LED Download PDF

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Publication number
TWI275191B
TWI275191B TW094128095A TW94128095A TWI275191B TW I275191 B TWI275191 B TW I275191B TW 094128095 A TW094128095 A TW 094128095A TW 94128095 A TW94128095 A TW 94128095A TW I275191 B TWI275191 B TW I275191B
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Taiwan
Prior art keywords
light
package structure
electrode
emitting diode
conductive material
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TW094128095A
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Chinese (zh)
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TW200709460A (en
Inventor
Dawson Liu
Randy Chi
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Lustrous Technology Ltd
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Publication of TW200709460A publication Critical patent/TW200709460A/en
Publication of TWI275191B publication Critical patent/TWI275191B/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19107—Disposition of discrete passive components off-chip wires

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  • Led Device Packages (AREA)

Abstract

A light emitting diode (LED) package structure is provided. The LED package structure includes a substrate on which there are at least one cavity and circuits on one side, a piece of silicon wafer coated with conduction layer on one side and the other side is attached to the substrate. LED chip is attached to the conduction layer of the silicon wafer and then disposed on the top surface of the substrate by eutectic bonding or silver filler epoxy. After wire bonding and silicone sealing, the structure is formed.

Description

1275191 九、發明說明： 【發明所屬之技術領域】 本發明係關於一種發光二極體，特別是關於一種發光 二極體的封裝結構。 x 【先前技術】 發光二極體(LED，Light Emitting Diode)在各種電子產 品與工業上的應用日益普及，由於所需之能源成本係遠低 於傳統之白熱燈或螢光燈，且單一的發光二極體之尺寸非 常的輕巧，乃傳統光源所不及，因此在電子產品體積曰益 輕薄短小的趨勢之下，發光二極體的需求也與日俱增。 請參照圖一所示，圖一係為習知發光二極體封裝結構 側剖面示意圖。習知的發光二極體封裝結構1〇主^&括 一發光二極體12、一金屬基板14、一電路圖案16、導線 18a與18b、樹脂20、以及電極22a與22b。其中，發光'二 極體12係為主要之發光元件，然而通常需要經過^裝程1275191 IX. Description of the Invention: [Technical Field] The present invention relates to a light-emitting diode, and more particularly to a package structure of a light-emitting diode. x [Prior Art] LEDs (Light Emitting Diodes) are increasingly used in various electronic products and industries, because the energy cost required is much lower than that of traditional incandescent or fluorescent lamps, and single The size of the light-emitting diode is very light, which is beyond the reach of traditional light sources. Therefore, under the trend of light and thin electronic products, the demand for light-emitting diodes is increasing. Referring to FIG. 1, FIG. 1 is a side cross-sectional view of a conventional LED package structure. A conventional light-emitting diode package structure includes a light-emitting diode 12, a metal substrate 14, a circuit pattern 16, wires 18a and 18b, a resin 20, and electrodes 22a and 22b. Among them, the illuminating 'diode 12 is the main illuminating element, but usually it needs to go through the process.

序以成為圖一所示之封裝結構10才便於應用於電子產品 中。 基板14通常具有一凹槽15，凹槽15之底面用以承載 x 一極體12。電路圖案16形成於凹槽15以外之基板 i4亡表面，導線18a與18b則用以電性連接發光二極‘ 12 與電路圖案16。樹脂2G填滿凹槽15且覆蓋電路圖案16 f二部份，藉以將發光二極體12與導線18a i f極電極22a與22b，以便使完成封餘 1G便於進行後續錢子產品中之電 5 12 12 1275191 ，習知技術中，通常將發光二極體12以樹脂2〇填 與功:士^結構1〇實際製作時，產生許多製作上 ^ ^一、、因加工刀具不良之相關缺點。由於凹槽15在 二νΛΓΠ電動鑽頭或CNC加工將凹槽15挖出， 底抑心由於為刀具之進刀死點，極 ，光二極體12利用固晶機台固定於凹槽15之中時:容 ί因ΐΐ凸點而造成發光二極體12破裂或傾斜，影塑良 ί热;ΓΪ 15底部由於刀具鈍化造成不平整，嚴ii 曰發光一極體12側光與背光的反射。 、 發弁第體12電極型式不同之相關缺點。 晶材料不同，使得正負雜（22a或 =有同侧電極之發光二極體可將導線 ί ιϋ4上方之電路圖案16。異側電極之發光二極體 ^無^適用於習知的封裝結構1G中(個下側電極黏貝= 土板f法利用現有之自動打線機施打導線收或18)。、 12 點。若將大功率發光二極體 η ϋ屬f質基板 二者之間僅使用一般銀膠 13，傳統轉U之熱傳導係數(Thermal c〇 僅 無法將大功率發光二極體12所產生的熱$ ，巧板14，反而聚積在銀膠13與發光二極體 成光哀。 ^ 面對上述習知技術的缺點，目前並 _ 策。如何將上述習知技術的缺點有效的改善有2 之發光二極體12固定於不平整之凹槽15内，增加^槽^ 1275191 麟熱傳係數減緩光衰，同時讓同側或異 盥極體12皆能以自動打線機施打導線18a 土反4上之電路圖案16，係為本發明之首要目 【發明内容】 描古目的係在於提供—種可用自動機台固晶並 挺同先反射率的發光二極體封裝結構。 本發明之另-目_在於提供-種_或異側電極之 lx光一極體皆能施打導線的發光二極體封褒結構。 之另—目的係在於提供―種提高熱傳係數減缓 光哀之發光二極體封裝結構。 本發明提供-種發光二極體之封裝結構，包括一基板， 該基板中至少製作一凹槽及至少一面形成電路圖案、一石夕 載板，該矽載板具有一第一表面與一第二表面，該第一表 面與該基板相結合，至少該第二表面濺鍍一導電材料。發 光一極體以共晶接合(Eutectic Bonding)或高導熱銀膠設置 於石夕載板之第二表面上。將該發光二極體之電極與基板上 之電路圖案連接封膠後形成一封裝結構。同側電極之發光 一極體可直接將導線打線至金屬基板上之電路圖案上。 異側電極之發光二極體，可將上側電極施打導線至金屬 基板上之電路圖案，下侧電極由於已共晶接合或以導電銀 膠接合於矽載板，又矽載板第二表面濺鍍一導電材料，因 此可經由矽載板導電材料施打導線連接到金屬基材上之 1275191 電路圖案。值得一提的是’高導熱銀膠係一種以奈米銀粉 為填充物之熱固形膠體，其熱傳效率比傳統銀膠高並具導 電性。 關於本發明之優點與精神，以及更詳細的實施方式可 以错由以下的實施方式以及所附圖式得到進*一步的瞭解。 【實施方式】 請參照圖二A與圖二B，皆為本發明發光二極體之封 裝結構示意圖。圖二A係為一同侧電極發光二極體之實施 例，圖二B係為一上下侧電極發光二極體之實施例。本發 明所提供之發光二極體之封裝結構30，包括一基板32、I 電路圖案 3卜一發光二極體(LED，Light Emitting Diode)34、 一石夕載板35、複數條導線38a與38b以及一膠體37。電路 圖案31形成於基板32表面。矽載板35具有一第一表面與 一第二表面，第一表面與基板32相結合，第二表面濺鍍一 導電材料351 ’發光二極體34設置於;ε夕載板35的第二表面 上。複數條導線38a與38b電線連接發光二極體34與電路 圖案31。膠體37密封發光二極體37及導線3如與381)。 一其中，基板32之材質可選自鋁材、銅材、陶瓷基材、 熱管(heat pipe)或平板熱管(vap〇r chamber)。膠體37係折射 率大於1.3之一矽膠。矽載板35上方包含一導電材料351， 導電材料351係以半導體製程以鍍上金，或者 ，鍍上金 與鈦(Ti)、銅(Cu)、與鎳_其中之至少一種元素而成。該矽 載板35 ®強度之故，厚度須大於·—。先利用固晶機 台將石夕載板35置入，固定於基板32的凹槽％巾，發光二 極體34係為-種半導體晶片，可利顔晶機台置入接合設 8 1275191 上。如此’可_發光二極體34固晶時直接 部因機械加工所造成之凸_ «，更可提 ί、車乂凹槽36底部更佳的反射面。 一絲ί光Γ極體34之電極的分佈，大體可分為兩種型式， 正負極位於晶片同側(如圖二Α)，一種為正負極位於 _如圖二Β)。如圖二A，發光二極體34之正負電極 侧，利用自動打線機打線時，可直接將導線38a ;38bk發光二極體34上之兩電極打到基板32之電路圖案 I如圖二B，發光二極體34之正負電極位於晶片異側， 利用自動打線機打線時，可將一導線38b從發光二極體34 士方電極打到基板32之電路圖案31上，另一導線施從石夕 戟板35之導電材料351連接到基板32之電路圖案31上。 封f結構30更包括有二電極42a與42b，設置於基板32上， 並藉由電路圖案31與導線38a或38b電性連接至發光二極 體34，以便於封裝結構3〇應用於其它電子裝置中。 请回顧習知技術說明。習知技術中凹槽36底部製作時 因刀具進刀死點常造成凸點，造成發光二極體34直接以自 動機台固晶於凹槽36底部時破裂，或製作凹槽36時刀具 =化造成凹槽36底部不夠光滑而降低反射量。再者，利用 習知技術無法製作異侧電極之發光二極體34，係因下側電 極黏貼於基板32後無法施打導線38a於其上。 一 本發明已改善上述習知技術之缺點，如圖二a與B所 示，，本發明以一厚度大於300;之矽載板35，上方以半導 體製程鍍上金，或者金與鈦(Ti)、銅(Cu)、鎳(Ni)其中之至少 =種元素所形成合金之一導電材料351，先將矽載板35以 高導熱銀膠(熱傳導係數大於15W/mK)固定於金屬材質之 基板32上’由於梦載板％之厚度遠大於發光二極體34 , 1275191 $固晶製程時較不容易碎裂。且矽载板34之一側濺鍍上 ^材料351後，較原先之凹槽35底部有較佳之反射率。 矽载板35之一側鍍金後，發光二極體34可直接以共晶 合的方式或以高導熱銀膠設置於矽基板34上，大^提昇 熱傳導率。本發明使得同側與異侧電極之發光二極體34皆 可適用同一種自動打線製程。 而本發明並不以上述實施例與圖示為限，在其它 列’石夕載板35之第二表面上可設置複數個發光二極體 Ϊ〇f _ LED) 34，並不以單一個發光二極體34 、綜合以上所述，本發明以一濺鑛了導電材料之石夕載板， =大，改善習知技術中(請_圖—與相關之先前技術說 白L’n.凹f底部製造時生成之凸點，造成發光二極體於 日時破裂或傾斜，2.製造凹槽時刀具鈍化，造成凹 f H整降低發光二極體慨射光的反射。3.同 打f線製程。4.發光二極體所產生的熱^ ’造成絲。此外，本發明所提供 姑米ί方t亚*雜殊之製造設備，可迅速融人現有製程 的ί助/将合成本之考量，對於錢之進步有實質且明顯 明精===^^^上/然其並非用以限定本發 ======絲圍内所作之修改，肖 1275191 【圖式簡單說明】 藉由以下詳細之描述結合所附圖示，將可輕易的瞭解上 述内容及此項發明之諸多優點，其中： 圖一係為習知發光二極體封裝結構側剖面示意圖； 圖二A係為本發明同侧電極發光二極體之封裝結構侧 剖面示意圖；以及 圖二B係為本發明異侧電極發光二極體之封裝結構侧 剖面示意圖。 【主要元件符號說明】 發光二極體封裝結構10、30 發光二極體12、34 銀膠13 基板14 凹槽15、36 電路圖案16、31 導線 18a、18b、38a、38b 樹脂20 電極 22a、22b、42a、42b 矽載板35 導電材料351 膠體37 11The package structure 10 shown in Fig. 1 is convenient for use in electronic products. The substrate 14 typically has a recess 15 on which the bottom surface of the recess 15 carries the x-pole body 12. The circuit pattern 16 is formed on the surface of the substrate i4 outside the recess 15 and the wires 18a and 18b are electrically connected to the light-emitting diode '12 and the circuit pattern 16. The resin 2G fills the recess 15 and covers the two portions of the circuit pattern 16f, thereby the light-emitting diode 12 and the wire 18a if the electrode electrodes 22a and 22b, so that the completion of the seal 1G facilitates the electricity in the subsequent money product. 12 12 1275191, in the conventional technology, the light-emitting diode 12 is usually filled with a resin 2 与 and the work is performed. When the actual structure is produced, many defects in manufacturing are caused. Since the groove 15 is used to excavate the groove 15 in a two-dimensional electric drill or CNC machining, the bottom suppression is due to the ingress of the tool, and the polar diode 12 is fixed in the groove 15 by the die bonding machine. : 容 ΐΐ ΐΐ ΐΐ 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光There are different disadvantages related to the 12-electrode type of the hairpin. The crystal material is different, so that the positive and negative impurities (22a or = the light-emitting diode with the same side electrode can be used for the circuit pattern 16 above the wire ί ϋ 4). The light-emitting diode of the opposite electrode is not suitable for the conventional package structure 1G Medium (the lower electrode paste = soil plate f method using the existing automatic wire machine to apply wire to receive or 18)., 12 points. If the high-power light-emitting diode η ϋ belongs to the f-material substrate only between Using the general silver glue 13, the heat transfer coefficient of the traditional U-turn (Thermal c〇 can only be used to generate the heat generated by the high-power LED 12, and the board 14 is instead accumulated in the silver glue 13 and the light-emitting diode. In the face of the above-mentioned shortcomings of the prior art, it is currently possible to effectively improve the shortcomings of the above-mentioned conventional techniques to fix the light-emitting diode 12 having 2 in the uneven groove 15, and increase the number of slots 1275191 The heat transfer coefficient of the lining slows down the light decay, and at the same time, the same side or the different bismuth polar body 12 can be applied to the circuit pattern 16 on the wire 18a of the wire 18a by the automatic wire bonding machine, which is the primary object of the invention. The purpose is to provide a kind of automatic machine that can be used for solid crystal and has the same reflectivity. Light-emitting diode package structure. Another object of the present invention is to provide a light-emitting diode package structure in which a lx light-pole body of a different type or an opposite-side electrode can be applied with a wire. The invention provides a light-emitting diode package structure, which comprises a substrate, wherein at least one groove is formed in the substrate, and at least one side forms a circuit pattern and a stone. The carrier board has a first surface and a second surface, the first surface is combined with the substrate, at least the second surface is sputtered with a conductive material. The light emitting body is eutectic bonded (Eutectic Bonding or high thermal conductivity silver paste is disposed on the second surface of the shixi carrier plate. The electrode of the light emitting diode is connected with the circuit pattern on the substrate to form a package structure, and the light emitting body of the same side electrode is formed. The wire can be directly wired to the circuit pattern on the metal substrate. The light-emitting diode of the opposite electrode can apply the upper electrode to the circuit pattern on the metal substrate, and the lower electrode is eutectic or conductive. The silver glue is bonded to the crucible carrier, and the second surface of the carrier is sputtered with a conductive material, so that the 1275191 circuit pattern connected to the metal substrate can be applied through the conductive material of the crucible carrier. It is worth mentioning that The thermal conductive silver glue is a thermosetting colloid with nano silver powder as a filler, and the heat transfer efficiency is higher than that of the traditional silver glue and has electrical conductivity. The advantages and spirit of the present invention, and more detailed embodiments may be The embodiment and the drawing are obtained in one step. [Embodiment] Please refer to FIG. 2A and FIG. 2B, which are schematic diagrams of the package structure of the light-emitting diode of the present invention. FIG. In the embodiment of the diode, FIG. 2B is an embodiment of an upper and lower electrode-emitting diode. The package structure 30 of the light emitting diode provided by the present invention comprises a substrate 32, an I circuit pattern 3, a light emitting diode (LED) 34, a rocking board 35, and a plurality of wires 38a and 38b. And a colloid 37. The circuit pattern 31 is formed on the surface of the substrate 32. The carrier board 35 has a first surface and a second surface. The first surface is combined with the substrate 32. The second surface is sputtered with a conductive material 351. The light emitting diode 34 is disposed on the second surface of the ε evening carrier 35. On the surface. A plurality of wires 38a and 38b are electrically connected to the light-emitting diode 34 and the circuit pattern 31. The colloid 37 seals the light-emitting diode 37 and the wires 3 as shown in 381). The material of the substrate 32 may be selected from aluminum, copper, ceramic substrate, heat pipe or vap〇r chamber. The colloidal 37 series has a refractive index greater than 1.3. The conductive substrate 351 is provided with a conductive material 351 which is plated with gold by a semiconductor process or plated with at least one of gold (Ti), copper (Cu) and nickel. The thickness of the carrier plate 35 ® must be greater than -. First, the Shishi carrier plate 35 is placed by the die bonding machine, and is fixed to the groove of the substrate 32. The light-emitting diode 34 is a semiconductor wafer, and the lining crystal machine is placed on the joint 8 1275191. . Thus, when the solid crystal of the light-emitting diode 34 is fixed, the direct portion is caused by machining, and the reflective surface of the bottom of the rudder groove 36 is better. The distribution of the electrodes of a trace of the light-emitting body 34 can be roughly divided into two types, the positive and negative electrodes are located on the same side of the wafer (as shown in Fig. 2), and the positive and negative electrodes are located on the same side (Figure 2). As shown in FIG. 2A, the positive and negative electrode sides of the light-emitting diode 34 can be directly driven to the circuit pattern I of the substrate 32 by the two electrodes on the wire 38a; 38bk light-emitting diode 34 when the wire is driven by the automatic wire bonding machine. The positive and negative electrodes of the light-emitting diode 34 are located on the opposite side of the wafer. When the wire is driven by the automatic wire bonding machine, a wire 38b can be struck from the LED electrode of the light-emitting diode 34 to the circuit pattern 31 of the substrate 32, and the other wire is applied. The conductive material 351 of the stone slab 35 is connected to the circuit pattern 31 of the substrate 32. The sealing structure 30 further includes two electrodes 42a and 42b disposed on the substrate 32 and electrically connected to the LEDs 34 by the circuit pattern 31 and the wires 38a or 38b, so that the package structure 3 is applied to other electronic components. In the device. Please review the technical description. In the prior art, when the bottom of the groove 36 is made, the bump is often caused by the infeed of the tool, and the light-emitting diode 34 is directly broken when the automatic machine is solid-crystallized at the bottom of the groove 36, or the cutter 36 is formed when the groove 36 is made. The bottom of the groove 36 is not smooth enough to reduce the amount of reflection. Further, the light-emitting diode 34 of the opposite-side electrode cannot be fabricated by a conventional technique, and the lower electrode is attached to the substrate 32, and the wire 38a cannot be applied thereto. One invention has improved the above-mentioned shortcomings of the prior art, as shown in Figures 2a and B, the present invention has a thickness of more than 300; the carrier plate 35 is coated with gold on the semiconductor process, or gold and titanium (Ti ), copper (Cu), nickel (Ni), at least = one of the alloys formed by the element of the conductive material 351, the crucible carrier 35 is first fixed to the metal material with a high thermal conductivity silver paste (thermal conductivity greater than 15W / mK) On the substrate 32, because the thickness of the dream carrier board is much larger than that of the light-emitting diode 34, 1275191 $ is less likely to be broken during the solid-crystal process. Moreover, after the material 351 is sputtered on one side of the carrier 34, the reflectance is better than the bottom of the original groove 35. After one side of the carrier plate 35 is plated with gold, the light-emitting diodes 34 can be directly disposed on the germanium substrate 34 in a eutectic manner or with a high thermal conductive silver paste to greatly increase the thermal conductivity. The invention enables the same automatic wire bonding process to be applied to the light-emitting diodes 34 of the same side and the opposite side electrodes. However, the present invention is not limited to the above embodiments and illustrations, and a plurality of light emitting diodes Ϊ〇f_LED 34 may be disposed on the second surface of the other column 'stone board 35', not a single one. Light-emitting diode 34, comprehensively described above, the present invention is a stone-plated carrier plate with a conductive material splashed, = large, improving the conventional technology (please_图- related to the prior art white L'n. concave The bump formed at the bottom of the f, causing the light-emitting diode to rupture or tilt in the daytime. 2. The tool is passivated when the groove is made, causing the concave f H to reduce the reflection of the light-emitting diode. 3. Same as the f-line Process 4. The heat generated by the light-emitting diode ^'s wire. In addition, the invention provides the manufacturing equipment of the glutinous rice, which can quickly integrate the existing process. Considerations, for the progress of the money, there is a substantial and obvious Ming ===^^^ On / but it is not used to limit the hair ======The modification made in the silk circumference, Xiao 1275191 [Simple description of the diagram] The above and many of the advantages of this invention will be readily apparent from the following detailed description, 1 is a side cross-sectional view of a conventional light-emitting diode package structure; FIG. 2A is a side cross-sectional view of a package structure of the same-side electrode light-emitting diode of the present invention; and FIG. 2B is a side-side electrode light-emitting diode of the present invention. Schematic diagram of the side of the package structure of the polar body. [Description of main components] Light-emitting diode package structure 10, 30 Light-emitting diode 12, 34 Silver glue 13 Substrate 14 Groove 15, 36 Circuit pattern 16, 31 Conductors 18a, 18b , 38a, 38b Resin 20 Electrode 22a, 22b, 42a, 42b 矽 Carrier plate 35 Conductive material 351 Colloid 37 11

Claims (1)

1275191 十、申請專利範圍： 1·一種發光二極體之封裝結構，包括： 一基板，具有一凹槽及一電路圖案； 一矽載板，設置於該凹槽中，該矽載板具有一第一 /與一弟一表面，該第一表面與該基板相結合，至少該第— 面減:鑛一導電材料； 〜表 一發光二極體（LED, Light Emitting Diode)，設置於4 載板之該第二表面； W亥石夕 複數條導線，電線連接該發光二極體與該電路圖案； 一膠體，密封該發光二極體及該些導線。 ’、、〜 2·如申請專利範圍第1項所述之封裝結構，其中該基 之材質可選自鋁材、銅材、陶瓷基材、熱管(heat i )戋 熱管(vapor chamber)。 板 3·如申請專利範圍第1項所述之封裝結構，其中該導 材料包括金（Au)。 4·如申請專利範圍第3項所述之封裝結構，其中該導電 材料係為至少包括金（Au)之一合金，該合金更包括鈦(Ti) 銅（Cu)鎳（Ni)或其組合。 * 5·如申請專利範圍第1項所述之封裝結構，該矽載板之 該第二表面上可設置複數個上述發光二極體plurality 〇f said LED) 〇 一 6·如申請專利範圍第1項所述之封裝結構，其中該發光 一極體係用共晶接合(Eutectic Bonding)方式設置於該石夕載板 之該卓二表面上。 12 1275191 7. 如申請專利範圍第1項所述之封裝結構，其中該發光 二極體係賴料係數高於15W/mK之—高導熱轉接^於 該矽載板之該第二表面。 、 8. 如申請專利範圍第1項所述之封裝結構，其中該矽載 笆，用共晶接合(Eutectic Bonding)方式設置於該基板之該凹 槽中。 9.如申請專利範圍第1項所述之封裝結構，其中該矽載 ，係用熱料魏冑於丨谓恤之-冑導齡職置於 板之該凹槽中。 土 申請專利範圍第1項所述之封裝結構，其中該膠 體係折射率大於L3之一石夕膠。 11·如申請專利範圍第i項所述之封裝結構，該發光二極 電極發光二極體’具有不同電性之-第-電極 =二電極，該第—電極與該第二電極分別施打該導線至 讀電路圖案。 ㈣2·广申請專利範圍帛1項所述之封裝結構，該發光二 係為—_電極發光二極體，具有不同電性之-第-電 電極，該第一電極施打其中一上述導線至該電路 二蕾二電極施打其中一上述導線至該導電材料，且從 該導電材料施打其中一上述導線至該電路圖案。 搞』炎如申請專利範圍帛1項所述之封裝結構，該發光二 為一異侧電極發光二極體，具有不同電性之一第一雷 極’該第—電極施打該其中—上述導線至該電 回” 苐二電極以共金接合(EutecticBondin幻設置於該導 13 1275191 電材料’且從耕電材料施打射—上述導線至該電路圖案。 極第1摘叙聰結構，該發光二 極體係為-異織極發光二極體， 尤 極與一第二電極，該第一雷栖妳扣1生之弟一電 _宏，㈣m弟電桎打其中—上述導線至該電路 圖案該第一電極以一尚導熱銀膠接合於該 該導電材打財—上述導線至魏路_。材枓’且攸 專利範圍第1項所述之封裝結構，其中該些 導線了選自金線、鋁線、銅線或其他金屬線材。1275191 X. Patent application scope: 1. A package structure of a light-emitting diode, comprising: a substrate having a groove and a circuit pattern; a carrier plate disposed in the groove, the carrier plate having a a first surface and a first surface, the first surface is combined with the substrate, at least the first surface minus: a conductive material; a light emitting diode (LED), set in 4 years The second surface of the board; a plurality of wires, the wires are connected to the light emitting diode and the circuit pattern; and a glue body seals the light emitting diodes and the wires. The package structure of claim 1, wherein the material of the base is selected from the group consisting of aluminum, copper, ceramic substrate, heat i, and a vapor chamber. The package structure of claim 1, wherein the conductive material comprises gold (Au). 4. The package structure of claim 3, wherein the conductive material is an alloy comprising at least one of gold (Au), the alloy further comprising titanium (Ti) copper (Cu) nickel (Ni) or a combination thereof . *5. The package structure according to claim 1, wherein the second surface of the carrier plate may be provided with a plurality of the above-mentioned light-emitting diodes plf said LED) The package structure of claim 1, wherein the light-emitting one-pole system is disposed on the surface of the stone carrier by Eutectic Bonding. The package structure of claim 1, wherein the light-emitting diode system has a feed coefficient higher than 15 W/mK, and the high heat transfer is applied to the second surface of the load-bearing plate. 8. The package structure of claim 1, wherein the crucible is disposed in the recess of the substrate by Eutectic Bonding. 9. The package structure of claim 1, wherein the load is placed in the groove of the board with a hot material. The invention relates to the package structure described in claim 1, wherein the gel system has a refractive index greater than one of L3. 11. The package structure of claim i, wherein the light-emitting diode electrode LED has different electrical properties - a first electrode = two electrodes, and the first electrode and the second electrode are respectively applied The wire is to the read circuit pattern. (4) The package structure described in the above-mentioned patent application scope, the light-emitting diode is an electrode-emitting diode having different electrical-first-electrodes, and the first electrode applies one of the wires to The second electrode of the circuit applies one of the wires to the conductive material, and applies one of the wires to the circuit pattern from the conductive material. Engaged in the package structure described in the patent application scope, the light-emitting two is an opposite-side electrode light-emitting diode, having one of different electrical properties, the first lightning pole, the first electrode is applied to the above-mentioned The wire is connected to the electric circuit. The second electrode is joined by a common gold (EutecticBondin is set on the conductive material 13 1275191 and is injected from the tillage material) to the circuit pattern. The illuminating dipole system is a hetero-polar illuminating diode, and the second pole is a second electrode. The first Leiqi 妳 buckle is a younger brother of the _ _ macro, (4) m 桎 桎 — — — — — — — — — — — — — — Patterning the first electrode with a thermally conductive silver paste to bond the conductive material to the conductive material - the above-mentioned wire to Wei Lu _. 枓 枓 攸 攸 攸 攸 攸 攸 , , , , , , , , , , Gold wire, aluminum wire, copper wire or other metal wire.
TW094128095A 2005-08-17 2005-08-17 Thermal efficient package structure for high power LED TWI275191B (en)

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TWI383523B (en) * 2009-09-04 2013-01-21

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TWI381562B (en) * 2009-06-26 2013-01-01 Ind Tech Res Inst Method for manufacturing reflective led die bonding structure at low temperature

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI383523B (en) * 2009-09-04 2013-01-21

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