TWI265648B - Doped organic semiconductor material and process for manufacturing the same - Google Patents

Doped organic semiconductor material and process for manufacturing the same

Info

Publication number
TWI265648B
TWI265648B TW093120074A TW93120074A TWI265648B TW I265648 B TWI265648 B TW I265648B TW 093120074 A TW093120074 A TW 093120074A TW 93120074 A TW93120074 A TW 93120074A TW I265648 B TWI265648 B TW I265648B
Authority
TW
Taiwan
Prior art keywords
semiconductor material
manufacturing
organic semiconductor
dopant
organic compound
Prior art date
Application number
TW093120074A
Other languages
English (en)
Chinese (zh)
Other versions
TW200509428A (en
Inventor
Ansgar Werner
Fenghong Li
Martin Pfeiffer
Original Assignee
Novaled Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Novaled Gmbh filed Critical Novaled Gmbh
Publication of TW200509428A publication Critical patent/TW200509428A/zh
Application granted granted Critical
Publication of TWI265648B publication Critical patent/TWI265648B/zh

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/30Doping active layers, e.g. electron transporting layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/10OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/12OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising dopants
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/10OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14Carrier transporting layers
    • H10K50/15Hole transporting layers
    • H10K50/155Hole transporting layers comprising dopants
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/10OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14Carrier transporting layers
    • H10K50/16Electron transporting layers
    • H10K50/165Electron transporting layers comprising dopants
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60Organic compounds having low molecular weight
    • H10K85/615Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60Organic compounds having low molecular weight
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60Organic compounds having low molecular weight
    • H10K85/615Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H10K85/621Aromatic anhydride or imide compounds, e.g. perylene tetra-carboxylic dianhydride or perylene tetracarboxylic di-imide
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60Organic compounds having low molecular weight
    • H10K85/649Aromatic compounds comprising a hetero atom
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/549Organic PV cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Electroluminescent Light Sources (AREA)
  • Photovoltaic Devices (AREA)
  • Nitrogen Condensed Heterocyclic Rings (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
TW093120074A 2003-08-18 2004-07-02 Doped organic semiconductor material and process for manufacturing the same TWI265648B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE10338406A DE10338406A1 (de) 2003-08-18 2003-08-18 Dotierte organische Halbleitermaterialien sowie Verfahren zu deren Herstellung

Publications (2)

Publication Number Publication Date
TW200509428A TW200509428A (en) 2005-03-01
TWI265648B true TWI265648B (en) 2006-11-01

Family

ID=34042224

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093120074A TWI265648B (en) 2003-08-18 2004-07-02 Doped organic semiconductor material and process for manufacturing the same

Country Status (9)

Country Link
US (1) US7151007B2 (enExample)
EP (1) EP1508903A3 (enExample)
JP (1) JP4108654B2 (enExample)
KR (1) KR100746798B1 (enExample)
CN (1) CN100418246C (enExample)
CA (1) CA2476168A1 (enExample)
DE (1) DE10338406A1 (enExample)
IN (1) IN2004MU00746A (enExample)
TW (1) TWI265648B (enExample)

Families Citing this family (62)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8907323B2 (en) * 2002-04-23 2014-12-09 Philip D. Freedman Microprocessor assembly
US7540978B2 (en) * 2004-08-05 2009-06-02 Novaled Ag Use of an organic matrix material for producing an organic semiconductor material, organic semiconductor material and electronic component
DE112005002603A5 (de) 2004-08-13 2007-08-09 Novaled Gmbh Schichtanordnung für ein Lichtemittierendes Bauelement
EP1648042B1 (en) * 2004-10-07 2007-05-02 Novaled AG A method for doping a semiconductor material with cesium
US7351999B2 (en) * 2004-12-16 2008-04-01 Au Optronics Corporation Organic light-emitting device with improved layer structure
EP1705727B1 (de) * 2005-03-15 2007-12-26 Novaled AG Lichtemittierendes Bauelement
EP1713136B1 (de) 2005-04-13 2007-12-12 Novaled AG Anordnung für eine organische Leuchtdiode vom pin-Typ und Verfahren zum Herstellen
EP1729346A1 (de) * 2005-06-01 2006-12-06 Novaled AG Lichtemittierendes Bauteil mit einer Elektrodenanordnung
EP1739765A1 (de) * 2005-07-01 2007-01-03 Novaled AG Organische Leuchtdiode und Anordnung mit mehreren organischen Leuchtdioden
TWI321968B (en) 2005-07-15 2010-03-11 Lg Chemical Ltd Organic light meitting device and method for manufacturing the same
US20090015150A1 (en) * 2005-07-15 2009-01-15 Lg Chem, Ltd. Organic light emitting device and method for manufacturing the same
EP1780816B1 (en) 2005-11-01 2020-07-01 Novaled GmbH A method for producing an electronic device with a layer structure and an electronic device
EP1786050B1 (de) * 2005-11-10 2010-06-23 Novaled AG Dotiertes organisches Halbleitermaterial
EP1798306B1 (de) * 2005-12-07 2008-06-11 Novaled AG Verfahren zum Abscheiden eines Aufdampfmaterials
DE502005004675D1 (de) * 2005-12-21 2008-08-21 Novaled Ag Organisches Bauelement
US7919010B2 (en) * 2005-12-22 2011-04-05 Novaled Ag Doped organic semiconductor material
DE602006001930D1 (de) * 2005-12-23 2008-09-04 Novaled Ag tur von organischen Schichten
EP1808909A1 (de) 2006-01-11 2007-07-18 Novaled AG Elekrolumineszente Lichtemissionseinrichtung
EP1999797A4 (en) * 2006-02-09 2010-11-24 Qd Vision Inc DEVICE COMPRISING SEMICONDUCTOR NANOCRYSTALS AND A LAYER COMPRISING A DOPE ORGANIC MATERIAL AND METHODS THEREOF
EP1837927A1 (de) * 2006-03-22 2007-09-26 Novaled AG Verwendung von heterocyclischen Radikalen zur Dotierung von organischen Halbleitern
EP2008318B1 (en) 2006-03-21 2013-02-13 Novaled AG Method for preparing doped organic semiconductor materials
ATE394800T1 (de) * 2006-03-21 2008-05-15 Novaled Ag Heterocyclisches radikal oder diradikal, deren dimere, oligomere, polymere, dispiroverbindungen und polycyclen, deren verwendung, organisches halbleitendes material sowie elektronisches bauelement
EP1848049B1 (de) * 2006-04-19 2009-12-09 Novaled AG Lichtemittierendes Bauelement
EP1860709B1 (de) * 2006-05-24 2012-08-08 Novaled AG Verwendung von quadratisch planaren Übergangsmetallkomplexen als Dotand
DE102007012794B3 (de) * 2007-03-16 2008-06-19 Novaled Ag Pyrido[3,2-h]chinazoline und/oder deren 5,6-Dihydroderivate, deren Herstellungsverfahren und diese enthaltendes dotiertes organisches Halbleitermaterial
DE102007019260B4 (de) * 2007-04-17 2020-01-16 Novaled Gmbh Nichtflüchtiges organisches Speicherelement
DE102007018456B4 (de) * 2007-04-19 2022-02-24 Novaled Gmbh Verwendung von Hauptgruppenelementhalogeniden und/oder -pseudohalogeniden, organisches halbleitendes Matrixmaterial, elektronische und optoelektronische Bauelemente
EP3457451B1 (de) 2007-04-30 2019-07-17 Novaled GmbH Die verwendung von oxokohlenstoff-, pseudooxokohlenstoff- und radialenverbindungen
EP1990847B1 (de) * 2007-05-10 2018-06-20 Novaled GmbH Verwendung von chinoiden Bisimidazolen und deren Derivaten als Dotand zur Dotierung eines organischen halbleitenden Matrixmaterials
EP2009014B1 (de) * 2007-06-22 2018-10-24 Novaled GmbH Verwendung eines Precursors eines n-Dotanden zur Dotierung eines organischen halbleitenden Materials, Precursor und elektronisches oder optoelektronisches Bauelement
DE102007030499A1 (de) * 2007-06-30 2009-01-08 Aixtron Ag Vorrichtung und Verfahren zum Abscheiden von insbesondere dotierten Schichten mittels OVPD oder dergleichen
DE102007031220B4 (de) 2007-07-04 2022-04-28 Novaled Gmbh Chinoide Verbindungen und deren Verwendung in halbleitenden Matrixmaterialien, elektronischen und optoelektronischen Bauelementen
DE102007055137A1 (de) 2007-11-19 2009-05-20 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Organische Leuchtdiode und Verfahren zu deren Herstellung
US8057712B2 (en) * 2008-04-29 2011-11-15 Novaled Ag Radialene compounds and their use
DE102008036062B4 (de) 2008-08-04 2015-11-12 Novaled Ag Organischer Feldeffekt-Transistor
DE102008036063B4 (de) * 2008-08-04 2017-08-31 Novaled Gmbh Organischer Feldeffekt-Transistor
DE102009051142B4 (de) 2009-06-05 2019-06-27 Heliatek Gmbh Photoaktives Bauelement mit invertierter Schichtfolge und Verfahren zu seiner Herstellung
DE102010031829B4 (de) 2009-07-21 2021-11-11 Novaled Gmbh Thermoelektrische Bauelemente mit dünnen Schichten
US20120261652A1 (en) 2009-10-14 2012-10-18 Novaled Ag Electro-Optical, Organic Semiconductor Component and Method for the Production Thereof
ES2587082T3 (es) 2009-12-16 2016-10-20 Heliatek Gmbh Elemento de construcción fotoactivo con capas orgánicas
EP2385556B1 (de) 2010-05-04 2021-01-20 Heliatek GmbH Photoaktives Bauelement mit organischen Schichten
EP2398056B1 (de) 2010-06-21 2016-03-02 Heliatek GmbH Organische Solarzelle mit mehreren Transportschichtsystemen
DE102010031979B4 (de) 2010-07-22 2014-10-30 Novaled Ag Halbleiterbauelement, Verfahren zu dessen Herstellung, Verwendung des Halbleiterbauelementes und Inverter mit zwei Halbleiterbauelementen
WO2012092972A1 (de) 2011-01-06 2012-07-12 Heliatek Gmbh Elektronisches oder optoelektronisches bauelement mit organischen schichten
US9559321B2 (en) 2011-02-25 2017-01-31 Ecole Polytechnique Federale De Lausanne (Epfl) Metal complexes for use as dopants and other uses
US10038150B2 (en) 2011-02-25 2018-07-31 Ecole Polytechnique Federale De Lausanne (Epfl) Metal complexes for use as dopants and other uses
EP2551949A1 (en) 2011-07-28 2013-01-30 Ecole Polytechnique Fédérale de Lausanne (EPFL) Metal complexes for use as dopants and other uses
DE102012100642B4 (de) 2012-01-26 2015-09-10 Novaled Ag Anordnung mit mehreren organischen Halbleiterbauelementen und Verfahren zum Herstellen sowie Verwendung der Anordnung
DE102012103448B4 (de) 2012-04-19 2018-01-04 Heliatek Gmbh Verfahren zur Optimierung von in Reihe geschalteten, photoaktiven Bauelementen auf gekrümmten Oberflächen
DE102012104118B4 (de) 2012-05-10 2021-12-02 Heliatek Gmbh Lochtransportmaterialien für optoelektronische Bauelemente
DE102012104247B4 (de) 2012-05-16 2017-07-20 Heliatek Gmbh Halbleitendes organisches Material für optoelektronische Bauelemente
WO2013179223A2 (de) 2012-05-30 2013-12-05 Heliatek Gmbh Solarmodul zur anordnung auf formteil aus beton
DE102012105022A1 (de) 2012-06-11 2013-12-12 Heliatek Gmbh Fahrzeug mit flexiblen organischen Photovoltaik-Modulen
US20150155397A1 (en) 2012-06-11 2015-06-04 Heliatek Gmbh Filter system for photoactive components
DE102012105810B4 (de) 2012-07-02 2020-12-24 Heliatek Gmbh Transparente Elektrode für optoelektronische Bauelemente
DE102012105809B4 (de) 2012-07-02 2017-12-07 Heliatek Gmbh Organisches optoelektronisches Bauelement mit transparenter Gegenelektrode und transparenter Elektrodenvorrichtung
EP2867932B1 (de) 2012-07-02 2019-09-25 Heliatek GmbH Transparente elektrode für optoelektronische bauelemente
DE102012105812A1 (de) 2012-07-02 2014-01-02 Heliatek Gmbh Elektrodenanordnung für optoelektronische Bauelemente
DE102012217587A1 (de) 2012-09-27 2014-03-27 Siemens Aktiengesellschaft Salze des Cyclopentadiens als n-Dotierstoffe für die organische Elektronik
DE102013110693B4 (de) 2013-09-27 2024-04-25 Heliatek Gmbh Photoaktives, organisches Material für optoelektronische Bauelemente
GB2527606A (en) * 2014-06-27 2015-12-30 Cambridge Display Tech Ltd Charge-transfer salt
US10727262B2 (en) 2016-01-13 2020-07-28 Sony Corporation Photoelectric conversion element, imaging device, and electronic apparatus comprising a photoelectric conversion layer having at least a subphthalocyanine or a subphthalocyanine derivative and a carrier dopant

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5093698A (en) * 1991-02-12 1992-03-03 Kabushiki Kaisha Toshiba Organic electroluminescent device
JPH06130440A (ja) * 1992-10-22 1994-05-13 Mitsubishi Kasei Corp 光情報処理素子
JPH09248929A (ja) * 1996-03-15 1997-09-22 Fuji Xerox Co Ltd 画像形成方法及び画像形成装置
US5811833A (en) * 1996-12-23 1998-09-22 University Of So. Ca Electron transporting and light emitting layers based on organic free radicals
JP2001527688A (ja) * 1996-12-23 2001-12-25 ザ トラスティーズ オブ プリンストン ユニバーシテイ 保護層を含有する有機発光デバイス
JPH10270171A (ja) * 1997-01-27 1998-10-09 Junji Kido 有機エレクトロルミネッセント素子
JP2000196140A (ja) * 1998-12-28 2000-07-14 Sharp Corp 有機エレクトロルミネッセンス素子とその製造法
TW474114B (en) * 1999-09-29 2002-01-21 Junji Kido Organic electroluminescent device, organic electroluminescent device assembly and method of controlling the emission spectrum in the device
TWI225312B (en) * 2001-02-08 2004-12-11 Semiconductor Energy Lab Light emitting device
JP4152597B2 (ja) * 2001-02-16 2008-09-17 三菱製紙株式会社 感光性組成物
JP4345278B2 (ja) * 2001-09-14 2009-10-14 セイコーエプソン株式会社 パターニング方法、膜形成方法、パターニング装置、有機エレクトロルミネッセンス素子の製造方法、カラーフィルタの製造方法、電気光学装置の製造方法、及び電子装置の製造方法
KR20030055140A (ko) * 2001-12-26 2003-07-02 후지 샤신 필름 가부시기가이샤 도전성 고분자를 함유하는 층을 가지는 유기 전계발광 소자
DE10207859A1 (de) * 2002-02-20 2003-09-04 Univ Dresden Tech Dotiertes organisches Halbleitermaterial sowie Verfahren zu dessen Herstellung
KR100560785B1 (ko) * 2003-02-03 2006-03-13 삼성에스디아이 주식회사 저전압에서 구동되는 유기 전계 발광 소자

Also Published As

Publication number Publication date
US7151007B2 (en) 2006-12-19
US20050061232A1 (en) 2005-03-24
CN1591926A (zh) 2005-03-09
DE10338406A1 (de) 2005-03-24
JP2005063960A (ja) 2005-03-10
EP1508903A2 (de) 2005-02-23
TW200509428A (en) 2005-03-01
EP1508903A3 (de) 2006-02-15
IN2004MU00746A (enExample) 2006-06-16
CN100418246C (zh) 2008-09-10
KR20050020663A (ko) 2005-03-04
CA2476168A1 (en) 2005-02-18
JP4108654B2 (ja) 2008-06-25
KR100746798B1 (ko) 2007-08-06

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