TWI263684B - Ag based sputtering target and method for manufacturing thereof - Google Patents

Ag based sputtering target and method for manufacturing thereof

Info

Publication number
TWI263684B
TWI263684B TW093121276A TW93121276A TWI263684B TW I263684 B TWI263684 B TW I263684B TW 093121276 A TW093121276 A TW 093121276A TW 93121276 A TW93121276 A TW 93121276A TW I263684 B TWI263684 B TW I263684B
Authority
TW
Taiwan
Prior art keywords
crystal grain
grain size
plural
selected points
dave
Prior art date
Application number
TW093121276A
Other languages
English (en)
Other versions
TW200516159A (en
Inventor
Katsutoshi Takagi
Junichi Nakai
Yuuki Tauchi
Hitoshi Matsuzaki
Hideo Fujii
Original Assignee
Kobe Steel Ltd
Kobelco Res Inst Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kobe Steel Ltd, Kobelco Res Inst Inc filed Critical Kobe Steel Ltd
Publication of TW200516159A publication Critical patent/TW200516159A/zh
Application granted granted Critical
Publication of TWI263684B publication Critical patent/TWI263684B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3464—Sputtering using more than one target
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/06—Alloys based on silver
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/14—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of noble metals or alloys based thereon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
TW093121276A 2003-07-16 2004-07-15 Ag based sputtering target and method for manufacturing thereof TWI263684B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003275621A JP4384453B2 (ja) 2003-07-16 2003-07-16 Ａｇ系スパッタリングターゲット及びその製造方法

Publications (2)

Publication Number Publication Date
TW200516159A TW200516159A (en) 2005-05-16
TWI263684B true TWI263684B (en) 2006-10-11

Family

ID=34074563

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093121276A TWI263684B (en) 2003-07-16 2004-07-15 Ag based sputtering target and method for manufacturing thereof

Country Status (9)

Country Link
US (2) US7763126B2 (zh)
EP (1) EP1659194B1 (zh)
JP (1) JP4384453B2 (zh)
KR (1) KR100731406B1 (zh)
CN (1) CN1823179B (zh)
AT (1) ATE486976T1 (zh)
DE (1) DE602004029902D1 (zh)
TW (1) TWI263684B (zh)
WO (1) WO2005007923A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI457450B (zh) * 2012-03-27 2014-10-21 Mitsubishi Materials Corp 銀系圓筒靶及其製造方法

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040238356A1 (en) * 2002-06-24 2004-12-02 Hitoshi Matsuzaki Silver alloy sputtering target and process for producing the same
JP4384453B2 (ja) * 2003-07-16 2009-12-16 株式会社神戸製鋼所 Ａｇ系スパッタリングターゲット及びその製造方法
CN100334239C (zh) * 2003-12-04 2007-08-29 株式会社神户制钢所 平板显示器用Ag基合金配线电极膜、Ag基合金溅射靶
JP4694543B2 (ja) 2007-08-29 2011-06-08 株式会社コベルコ科研 Ａｇ基合金スパッタリングターゲット、およびその製造方法
JP5046890B2 (ja) 2007-11-29 2012-10-10 株式会社コベルコ科研 Ａｇ系スパッタリングターゲット
JP5123240B2 (ja) * 2009-03-24 2013-01-23 大同メタル工業株式会社 摺動部材
KR101515341B1 (ko) * 2009-09-18 2015-04-24 후루카와 덴키 고교 가부시키가이샤 스퍼터링 타겟에 사용되는 구리재료의 제조방법
JP4793502B2 (ja) * 2009-10-06 2011-10-12 三菱マテリアル株式会社 有機ｅｌ素子の反射電極膜形成用銀合金ターゲットおよびその製造方法
WO2011111373A1 (ja) * 2010-03-11 2011-09-15 株式会社 東芝 スパッタリングターゲットとその製造方法、および半導体素子の製造方法
JP5669015B2 (ja) * 2011-04-06 2015-02-12 三菱マテリアル株式会社 導電性膜形成用銀合金スパッタリングターゲットおよびその製造方法
JP5669014B2 (ja) * 2011-04-06 2015-02-12 三菱マテリアル株式会社 導電性膜形成用銀合金スパッタリングターゲットおよびその製造方法
JP5830907B2 (ja) * 2011-04-06 2015-12-09 三菱マテリアル株式会社 導電性膜形成用銀合金スパッタリングターゲットおよびその製造方法
WO2012137461A1 (ja) * 2011-04-06 2012-10-11 三菱マテリアル株式会社 導電性膜形成用銀合金スパッタリングターゲットおよびその製造方法
JP5830908B2 (ja) * 2011-04-06 2015-12-09 三菱マテリアル株式会社 導電性膜形成用銀合金スパッタリングターゲットおよびその製造方法
JP2012007237A (ja) * 2011-06-01 2012-01-12 Kobelco Kaken:Kk Ａｇ系スパッタリングターゲット
JP5159962B1 (ja) * 2012-01-10 2013-03-13 三菱マテリアル株式会社 導電性膜形成用銀合金スパッタリングターゲットおよびその製造方法
JP5159963B1 (ja) * 2012-01-13 2013-03-13 三菱マテリアル株式会社 導電性膜形成用銀合金スパッタリングターゲットおよびその製造方法
JP5910099B2 (ja) 2012-01-18 2016-04-27 セイコーエプソン株式会社 干渉フィルター、光学モジュールおよび電子機器
JP2013177667A (ja) * 2012-02-02 2013-09-09 Kobe Steel Ltd 反射膜および／または透過膜、もしくは電気配線および／または電極に用いられるＡｇ合金膜、並びにＡｇ合金スパッタリングターゲットおよびＡｇ合金フィラー
DE102012006718B3 (de) * 2012-04-04 2013-07-18 Heraeus Materials Technology Gmbh & Co. Kg Planares oder rohrförmiges Sputtertarget sowie Verfahren zur Herstellung desselben
WO2014077410A1 (ja) * 2012-11-19 2014-05-22 田中貴金属工業株式会社 Ａｇ含有層の製造方法、その装置、Ａｇ含有層、及びそれを用いた摺動接点材
JP5612147B2 (ja) * 2013-03-11 2014-10-22 三菱マテリアル株式会社 導電性膜形成用銀合金スパッタリングターゲットおよびその製造方法
DE102014214683A1 (de) * 2014-07-25 2016-01-28 Heraeus Deutschland GmbH & Co. KG Sputtertarget auf der Basis einer Silberlegierung
EP3168325B1 (de) 2015-11-10 2022-01-05 Materion Advanced Materials Germany GmbH Sputtertarget auf der basis einer silberlegierung
CN105607272B (zh) * 2016-01-15 2018-02-06 上海玮舟微电子科技有限公司 一种3d膜的校正方法及系统
KR101959865B1 (ko) * 2016-11-18 2019-03-20 엘티메탈 주식회사 도전성 막 형성용 은 합금 조성물 및 이의 제조 방법

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JPH06264232A (ja) 1993-03-12 1994-09-20 Nikko Kinzoku Kk Ｔａ製スパッタリングタ−ゲットとその製造方法
JP2857015B2 (ja) 1993-04-08 1999-02-10 株式会社ジャパンエナジー 高純度アルミニウムまたはその合金からなるスパッタリングターゲット
JPH09324264A (ja) 1996-06-03 1997-12-16 Toppan Printing Co Ltd スパッタリングターゲット
JP3403918B2 (ja) 1997-06-02 2003-05-06 株式会社ジャパンエナジー 高純度銅スパッタリングタ−ゲットおよび薄膜
US6569270B2 (en) * 1997-07-11 2003-05-27 Honeywell International Inc. Process for producing a metal article
JP2000239835A (ja) 1999-02-22 2000-09-05 Japan Energy Corp スパッタリングターゲット
JP4342639B2 (ja) 1999-06-02 2009-10-14 株式会社東芝 スパッタリングターゲット、および電極膜の製造方法
JP3715239B2 (ja) 1999-08-16 2005-11-09 住友チタニウム株式会社 据え込み鍛造性に優れるチタン材およびその製造方法
JP4698779B2 (ja) 1999-09-08 2011-06-08 Ｊｘ日鉱日石金属株式会社 磁性体スパッタリングターゲット及びその製造方法
JP2001307336A (ja) * 2000-04-25 2001-11-02 Samsung Electronics Co Ltd 光ディスク
JP2002183463A (ja) 2000-12-08 2002-06-28 Nec Corp カード自動発行システム
JP2002183462A (ja) 2000-12-15 2002-06-28 Tamotsu Sakiyama 外部インセンティブ・システム、外部インセンティブ方法、外部インセンティブプログラムが記憶された記憶媒体、情報処理サーバー、及び、認証用サーバー
JP2003034828A (ja) * 2001-02-15 2003-02-07 Kobe Steel Ltd 電磁波シールド用のＡｇ合金膜、電磁波シールド用Ａｇ合金膜形成体及び電磁波シールド用Ａｇ合金スパッタリングターゲット
JP3982793B2 (ja) 2001-09-14 2007-09-26 日立金属株式会社 表示装置用Ａｇ合金反射膜
JP3778425B2 (ja) 2001-10-03 2006-05-24 日立金属株式会社 表示装置に用いられる電子部品用Ａｇ合金膜および表示装置に用いられる電子部品用Ａｇ合金膜形成用スパッタリングターゲット材
EP1449935B1 (en) 2001-11-26 2009-03-11 Nippon Mining & Metals Co., Ltd. Sputtering target and production method therefor
JP4264302B2 (ja) * 2002-06-24 2009-05-13 株式会社コベルコ科研 銀合金スパッタリングターゲットとその製造方法
US20040238356A1 (en) 2002-06-24 2004-12-02 Hitoshi Matsuzaki Silver alloy sputtering target and process for producing the same
JP4305809B2 (ja) * 2002-07-10 2009-07-29 日立金属株式会社 Ａｇ合金系スパッタリングターゲット材
JP3993530B2 (ja) 2003-05-16 2007-10-17 株式会社神戸製鋼所 Ａｇ−Ｂｉ系合金スパッタリングターゲットおよびその製造方法
JP4384453B2 (ja) 2003-07-16 2009-12-16 株式会社神戸製鋼所 Ａｇ系スパッタリングターゲット及びその製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI457450B (zh) * 2012-03-27 2014-10-21 Mitsubishi Materials Corp 銀系圓筒靶及其製造方法

Also Published As

Publication number Publication date
TW200516159A (en) 2005-05-16
JP4384453B2 (ja) 2009-12-16
WO2005007923A1 (ja) 2005-01-27
US20060169577A1 (en) 2006-08-03
CN1823179A (zh) 2006-08-23
ATE486976T1 (de) 2010-11-15
JP2005036291A (ja) 2005-02-10
US20100264018A1 (en) 2010-10-21
EP1659194B1 (en) 2010-11-03
EP1659194A1 (en) 2006-05-24
US7763126B2 (en) 2010-07-27
CN1823179B (zh) 2012-03-28
KR20060026964A (ko) 2006-03-24
US8123875B2 (en) 2012-02-28
EP1659194A4 (en) 2008-09-03
DE602004029902D1 (de) 2010-12-16
KR100731406B1 (ko) 2007-06-21

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Legal Events

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MM4A Annulment or lapse of patent due to non-payment of fees