TWI263299B - Method for manufacturing semiconductor device - Google Patents

Method for manufacturing semiconductor device

Info

Publication number
TWI263299B
TWI263299B TW093119272A TW93119272A TWI263299B TW I263299 B TWI263299 B TW I263299B TW 093119272 A TW093119272 A TW 093119272A TW 93119272 A TW93119272 A TW 93119272A TW I263299 B TWI263299 B TW I263299B
Authority
TW
Taiwan
Prior art keywords
forming
interlayer insulation
metal line
insulation film
contact holes
Prior art date
Application number
TW093119272A
Other languages
English (en)
Other versions
TW200516701A (en
Inventor
Cheol-Mo Jeong
Tae-Kyung Kim
Original Assignee
Hynix Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hynix Semiconductor Inc filed Critical Hynix Semiconductor Inc
Publication of TW200516701A publication Critical patent/TW200516701A/zh
Application granted granted Critical
Publication of TWI263299B publication Critical patent/TWI263299B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
TW093119272A 2003-11-04 2004-06-30 Method for manufacturing semiconductor device TWI263299B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020030077490A KR100562675B1 (ko) 2003-11-04 2003-11-04 반도체 소자의 제조방법

Publications (2)

Publication Number Publication Date
TW200516701A TW200516701A (en) 2005-05-16
TWI263299B true TWI263299B (en) 2006-10-01

Family

ID=34545719

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093119272A TWI263299B (en) 2003-11-04 2004-06-30 Method for manufacturing semiconductor device

Country Status (4)

Country Link
US (1) US7078332B2 (zh)
KR (1) KR100562675B1 (zh)
CN (1) CN1316592C (zh)
TW (1) TWI263299B (zh)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100685639B1 (ko) * 2005-06-17 2007-02-22 주식회사 하이닉스반도체 낸드 플래쉬 메모리 소자의 제조방법
US7863176B2 (en) * 2008-05-13 2011-01-04 Micron Technology, Inc. Low-resistance interconnects and methods of making same
US8951907B2 (en) * 2010-12-14 2015-02-10 GlobalFoundries, Inc. Semiconductor devices having through-contacts and related fabrication methods
KR20150011219A (ko) * 2013-07-22 2015-01-30 삼성디스플레이 주식회사 박막 트랜지스터 및 이를 포함하는 박막 트랜지스터 기판
CN106158794B (zh) * 2015-04-07 2019-01-15 华邦电子股份有限公司 半导体装置
US10867842B2 (en) * 2018-10-31 2020-12-15 Taiwan Semiconductor Manufacturing Company, Ltd. Method for shrinking openings in forming integrated circuits
KR20200123922A (ko) 2019-04-23 2020-11-02 삼성전자주식회사 캐패시터를 갖는 반도체 소자

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100232506B1 (ko) * 1995-06-27 1999-12-01 포만 제프리 엘. 전기적 접속을 제공하는 배선 구조 및 도체와 그 도체형성방법
KR100532407B1 (ko) 1999-09-15 2005-11-30 삼성전자주식회사 다마신 구조의 배선을 구비하는 반도체 장치의 제조방법
KR100331568B1 (ko) * 2000-05-26 2002-04-06 윤종용 반도체 메모리 소자 및 그 제조방법
JP3696055B2 (ja) * 2000-06-27 2005-09-14 シャープ株式会社 半導体装置の製造方法
KR100668810B1 (ko) 2000-08-02 2007-01-16 주식회사 하이닉스반도체 알씨 딜레이를 개선한 반도체소자의 금속배선방법
US6531407B1 (en) * 2000-08-31 2003-03-11 Micron Technology, Inc. Method, structure and process flow to reduce line-line capacitance with low-K material
JP4257051B2 (ja) * 2001-08-10 2009-04-22 株式会社ルネサステクノロジ 半導体集積回路装置の製造方法
JP4340040B2 (ja) * 2002-03-28 2009-10-07 富士通マイクロエレクトロニクス株式会社 半導体装置の製造方法

Also Published As

Publication number Publication date
CN1614763A (zh) 2005-05-11
KR100562675B1 (ko) 2006-03-20
KR20050042861A (ko) 2005-05-11
US7078332B2 (en) 2006-07-18
CN1316592C (zh) 2007-05-16
TW200516701A (en) 2005-05-16
US20050095838A1 (en) 2005-05-05

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees