TWI257130B - Plasma processing apparatus and method of designing the same - Google Patents
Plasma processing apparatus and method of designing the sameInfo
- Publication number
- TWI257130B TWI257130B TW094105927A TW94105927A TWI257130B TW I257130 B TWI257130 B TW I257130B TW 094105927 A TW094105927 A TW 094105927A TW 94105927 A TW94105927 A TW 94105927A TW I257130 B TWI257130 B TW I257130B
- Authority
- TW
- Taiwan
- Prior art keywords
- plasma
- processing apparatus
- distribution
- plasma processing
- producing portion
- Prior art date
Links
- 238000009792 diffusion process Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32422—Arrangement for selecting ions or species in the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02321—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer
- H01L21/02329—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of nitrogen
- H01L21/02332—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of nitrogen into an oxide layer, e.g. changing SiO to SiON
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
- H01L21/0234—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004056618A JP2005251803A (ja) | 2004-03-01 | 2004-03-01 | プラズマ処理装置およびその設計方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200540988A TW200540988A (en) | 2005-12-16 |
TWI257130B true TWI257130B (en) | 2006-06-21 |
Family
ID=34908925
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW094105927A TWI257130B (en) | 2004-03-01 | 2005-02-25 | Plasma processing apparatus and method of designing the same |
Country Status (5)
Country | Link |
---|---|
US (1) | US20050194097A1 (ko) |
JP (1) | JP2005251803A (ko) |
KR (1) | KR100712172B1 (ko) |
CN (1) | CN100407380C (ko) |
TW (1) | TWI257130B (ko) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007088199A (ja) * | 2005-09-22 | 2007-04-05 | Canon Inc | 処理装置 |
CN100405537C (zh) * | 2005-12-07 | 2008-07-23 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 等离子体反应装置 |
JP2009545101A (ja) * | 2006-07-20 | 2009-12-17 | アビザ テクノロジー リミティド | プラズマ源 |
CN101490792B (zh) * | 2006-07-20 | 2012-02-01 | 阿维扎技术有限公司 | 离子沉积设备 |
CN101490789B (zh) | 2006-07-20 | 2011-04-13 | 阿维扎技术有限公司 | 离子源 |
GB0616131D0 (en) * | 2006-08-14 | 2006-09-20 | Oxford Instr Plasma Technology | Surface processing apparatus |
KR101682155B1 (ko) * | 2015-04-20 | 2016-12-02 | 주식회사 유진테크 | 기판 처리 장치 |
JP7097809B2 (ja) * | 2018-12-28 | 2022-07-08 | 東京エレクトロン株式会社 | ガス導入構造、処理装置及び処理方法 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01149964A (ja) * | 1987-12-04 | 1989-06-13 | Furukawa Electric Co Ltd:The | プラズマcvd装置用シャワー電極 |
JPH07101685B2 (ja) * | 1989-01-26 | 1995-11-01 | 富士通株式会社 | マイクロ波プラズマ処理装置 |
WO2004089046A1 (ja) * | 1991-11-05 | 2004-10-14 | Nobumasa Suzuki | 無端環状導波管を有するマイクロ波導入装置及び該装置を備えたプラズマ処理装置 |
JP2886752B2 (ja) * | 1991-11-05 | 1999-04-26 | キヤノン株式会社 | 無端環状導波管を有するマイクロ波導入装置及び該装置を備えたプラズマ処理装置 |
JPH06204181A (ja) * | 1992-12-29 | 1994-07-22 | Ibiden Co Ltd | プラズマエッチング用電極板 |
JPH0845910A (ja) * | 1994-07-29 | 1996-02-16 | Nippon Steel Corp | プラズマ処理装置 |
US5891350A (en) * | 1994-12-15 | 1999-04-06 | Applied Materials, Inc. | Adjusting DC bias voltage in plasma chambers |
US5976261A (en) * | 1996-07-11 | 1999-11-02 | Cvc Products, Inc. | Multi-zone gas injection apparatus and method for microelectronics manufacturing equipment |
JPH11350143A (ja) * | 1998-06-02 | 1999-12-21 | Toshiba Corp | 成膜装置 |
JP2000058294A (ja) * | 1998-08-07 | 2000-02-25 | Furontekku:Kk | プラズマ処理装置 |
US6331754B1 (en) * | 1999-05-13 | 2001-12-18 | Tokyo Electron Limited | Inductively-coupled-plasma-processing apparatus |
JP2001023955A (ja) * | 1999-07-07 | 2001-01-26 | Mitsubishi Electric Corp | プラズマ処理装置 |
JP3889280B2 (ja) | 2002-01-07 | 2007-03-07 | 忠弘 大見 | プラズマ処理装置 |
-
2004
- 2004-03-01 JP JP2004056618A patent/JP2005251803A/ja not_active Withdrawn
-
2005
- 2005-02-25 US US11/064,975 patent/US20050194097A1/en not_active Abandoned
- 2005-02-25 TW TW094105927A patent/TWI257130B/zh not_active IP Right Cessation
- 2005-02-28 KR KR1020050016322A patent/KR100712172B1/ko active IP Right Grant
- 2005-03-01 CN CN2005100518242A patent/CN100407380C/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
CN1664996A (zh) | 2005-09-07 |
KR20060043213A (ko) | 2006-05-15 |
TW200540988A (en) | 2005-12-16 |
KR100712172B1 (ko) | 2007-04-27 |
JP2005251803A (ja) | 2005-09-15 |
CN100407380C (zh) | 2008-07-30 |
US20050194097A1 (en) | 2005-09-08 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |