TWI257126B - Slurry and polishing method - Google Patents
Slurry and polishing methodInfo
- Publication number
- TWI257126B TWI257126B TW92120053A TW92120053A TWI257126B TW I257126 B TWI257126 B TW I257126B TW 92120053 A TW92120053 A TW 92120053A TW 92120053 A TW92120053 A TW 92120053A TW I257126 B TWI257126 B TW I257126B
- Authority
- TW
- Taiwan
- Prior art keywords
- slurry
- organic compound
- cyclic organic
- polishing method
- oxidizer
- Prior art date
Links
- 239000002002 slurry Substances 0.000 title abstract 5
- 238000005498 polishing Methods 0.000 title abstract 3
- 238000000034 method Methods 0.000 title abstract 2
- -1 cyclic organic compound Chemical class 0.000 abstract 2
- 239000002184 metal Substances 0.000 abstract 2
- 230000002708 enhancing effect Effects 0.000 abstract 1
- 230000003628 erosive effect Effects 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 125000002883 imidazolyl group Chemical group 0.000 abstract 1
- 239000003607 modifier Substances 0.000 abstract 1
- 239000007800 oxidant agent Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/04—Aqueous dispersions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Landscapes
- Chemical & Material Sciences (AREA)
- Dispersion Chemistry (AREA)
- Organic Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Weting (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002216423 | 2002-07-25 | ||
JP2002216428 | 2002-07-25 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200405453A TW200405453A (en) | 2004-04-01 |
TWI257126B true TWI257126B (en) | 2006-06-21 |
Family
ID=31190292
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW92120053A TWI257126B (en) | 2002-07-25 | 2003-07-23 | Slurry and polishing method |
Country Status (4)
Country | Link |
---|---|
JP (1) | JPWO2004012248A1 (ja) |
AU (1) | AU2003248101A1 (ja) |
TW (1) | TWI257126B (ja) |
WO (1) | WO2004012248A1 (ja) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102004010379A1 (de) * | 2004-03-03 | 2005-09-22 | Schott Ag | Verfahren zur Herstellung von Wafern mit defektarmen Oberflächen, die Verwendung solcher Wafer und damit erhaltene elektronische Bauteile |
JP4316406B2 (ja) * | 2004-03-22 | 2009-08-19 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
JP4644434B2 (ja) * | 2004-03-24 | 2011-03-02 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
JP5648567B2 (ja) * | 2010-05-07 | 2015-01-07 | 日立化成株式会社 | Cmp用研磨液及びこれを用いた研磨方法 |
JP5953766B2 (ja) * | 2012-01-24 | 2016-07-20 | 日立化成株式会社 | 研磨液及び基体の研磨方法 |
JP6589361B2 (ja) * | 2015-05-01 | 2019-10-16 | 日立化成株式会社 | 研磨剤、研磨剤セット及び基体の研磨方法 |
CN113874377A (zh) * | 2019-05-13 | 2021-12-31 | 埃科莱布美国股份有限公司 | 作为铜腐蚀抑制剂的1,2,4-三唑并[1,5-a]嘧啶衍生物 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6217416B1 (en) * | 1998-06-26 | 2001-04-17 | Cabot Microelectronics Corporation | Chemical mechanical polishing slurry useful for copper/tantalum substrates |
JP2000252243A (ja) * | 1998-12-28 | 2000-09-14 | Hitachi Chem Co Ltd | 金属用研磨液及びそれを用いた研磨方法 |
JP4538109B2 (ja) * | 1999-02-18 | 2010-09-08 | 株式会社トッパンTdkレーベル | 化学機械研磨組成物 |
JP3902897B2 (ja) * | 1999-11-15 | 2007-04-11 | 日立化成工業株式会社 | 金属用研磨液を用いた基板の研磨方法 |
JP2001185514A (ja) * | 1999-12-27 | 2001-07-06 | Hitachi Chem Co Ltd | Cmp研磨剤及び基板の研磨方法 |
JP3841995B2 (ja) * | 1999-12-28 | 2006-11-08 | Necエレクトロニクス株式会社 | 化学的機械的研磨用スラリー |
JP4001219B2 (ja) * | 2000-10-12 | 2007-10-31 | Jsr株式会社 | 化学機械研磨用水系分散体及び化学機械研磨方法 |
WO2001071789A1 (fr) * | 2000-03-21 | 2001-09-27 | Wako Pure Chemical Industries, Ltd. | Agent de nettoyage de tranche de semi-conducteur et procede de nettoyage |
JP3768401B2 (ja) * | 2000-11-24 | 2006-04-19 | Necエレクトロニクス株式会社 | 化学的機械的研磨用スラリー |
JP3768402B2 (ja) * | 2000-11-24 | 2006-04-19 | Necエレクトロニクス株式会社 | 化学的機械的研磨用スラリー |
JP2003188120A (ja) * | 2001-12-17 | 2003-07-04 | Hitachi Chem Co Ltd | 金属用研磨液及び研磨方法 |
CN101037585B (zh) * | 2002-04-30 | 2010-05-26 | 日立化成工业株式会社 | 研磨液及研磨方法 |
JP2004031442A (ja) * | 2002-06-21 | 2004-01-29 | Hitachi Chem Co Ltd | 研磨液及び研磨方法 |
JP2004031446A (ja) * | 2002-06-21 | 2004-01-29 | Hitachi Chem Co Ltd | 研磨液及び研磨方法 |
-
2003
- 2003-07-23 TW TW92120053A patent/TWI257126B/zh not_active IP Right Cessation
- 2003-07-24 AU AU2003248101A patent/AU2003248101A1/en not_active Abandoned
- 2003-07-24 JP JP2004524136A patent/JPWO2004012248A1/ja active Pending
- 2003-07-24 WO PCT/JP2003/009389 patent/WO2004012248A1/ja active Application Filing
Also Published As
Publication number | Publication date |
---|---|
WO2004012248A1 (ja) | 2004-02-05 |
TW200405453A (en) | 2004-04-01 |
JPWO2004012248A1 (ja) | 2005-11-24 |
AU2003248101A1 (en) | 2004-02-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |