TWI256373B - Micromachine and method of fabricating the same - Google Patents

Micromachine and method of fabricating the same

Info

Publication number
TWI256373B
TWI256373B TW093112546A TW93112546A TWI256373B TW I256373 B TWI256373 B TW I256373B TW 093112546 A TW093112546 A TW 093112546A TW 93112546 A TW93112546 A TW 93112546A TW I256373 B TWI256373 B TW I256373B
Authority
TW
Taiwan
Prior art keywords
electrode
insulating layer
micromachine
fabricating
same
Prior art date
Application number
TW093112546A
Other languages
English (en)
Other versions
TW200524819A (en
Inventor
Kazuhiro Matsuhisa
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of TW200524819A publication Critical patent/TW200524819A/zh
Application granted granted Critical
Publication of TWI256373B publication Critical patent/TWI256373B/zh

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02244—Details of microelectro-mechanical resonators
    • H03H9/02259—Driving or detection means
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/0072—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks of microelectro-mechanical resonators or networks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/24—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive
    • H03H9/2405—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive of microelectro-mechanical resonators
    • H03H9/2447—Beam resonators
    • H03H9/2463—Clamped-clamped beam resonators
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02244—Details of microelectro-mechanical resonators
    • H03H2009/02488—Vibration modes
    • H03H2009/02511—Vertical, i.e. perpendicular to the substrate plane
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/53—Means to assemble or disassemble
    • Y10T29/5313—Means to assemble electrical device
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/53—Means to assemble or disassemble
    • Y10T29/5313—Means to assemble electrical device
    • Y10T29/532—Conductor
    • Y10T29/53204—Electrode
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/53—Means to assemble or disassemble
    • Y10T29/5313—Means to assemble electrical device
    • Y10T29/532—Conductor
    • Y10T29/53209—Terminal or connector
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/53—Means to assemble or disassemble
    • Y10T29/5313—Means to assemble electrical device
    • Y10T29/532—Conductor
    • Y10T29/53209—Terminal or connector
    • Y10T29/53213—Assembled to wire-type conductor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/53—Means to assemble or disassemble
    • Y10T29/53274—Means to disassemble electrical device

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Micromachines (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
TW093112546A 2003-05-13 2004-05-04 Micromachine and method of fabricating the same TWI256373B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003133929A JP4123044B2 (ja) 2003-05-13 2003-05-13 マイクロマシンおよびその製造方法

Publications (2)

Publication Number Publication Date
TW200524819A TW200524819A (en) 2005-08-01
TWI256373B true TWI256373B (en) 2006-06-11

Family

ID=33508149

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093112546A TWI256373B (en) 2003-05-13 2004-05-04 Micromachine and method of fabricating the same

Country Status (5)

Country Link
US (2) US7102268B2 (zh)
JP (1) JP4123044B2 (zh)
KR (1) KR20040098542A (zh)
CN (1) CN1305751C (zh)
TW (1) TWI256373B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI460120B (zh) * 2010-03-04 2014-11-11 Fujitsu Ltd 製造ｍｅｍｓ裝置之方法及ｍｅｍｓ裝置

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JP4007115B2 (ja) * 2002-08-09 2007-11-14 ソニー株式会社 マイクロマシンおよびその製造方法
US7749911B2 (en) * 2004-11-30 2010-07-06 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming an improved T-shaped gate structure
US7808253B2 (en) * 2005-12-02 2010-10-05 Semiconductor Energy Laboratory Co., Ltd. Test method of microstructure body and micromachine
US8739626B2 (en) 2009-08-04 2014-06-03 Fairchild Semiconductor Corporation Micromachined inertial sensor devices
JP5482541B2 (ja) * 2009-10-01 2014-05-07 セイコーエプソン株式会社 振動片、振動子、発振器、及び電子機器
US8813564B2 (en) 2010-09-18 2014-08-26 Fairchild Semiconductor Corporation MEMS multi-axis gyroscope with central suspension and gimbal structure
US9856132B2 (en) 2010-09-18 2018-01-02 Fairchild Semiconductor Corporation Sealed packaging for microelectromechanical systems
DE112011103124T5 (de) 2010-09-18 2013-12-19 Fairchild Semiconductor Corporation Biegelager zum Verringern von Quadratur für mitschwingende mikromechanische Vorrichtungen
US9278846B2 (en) 2010-09-18 2016-03-08 Fairchild Semiconductor Corporation Micromachined monolithic 6-axis inertial sensor
EP2616389B1 (en) 2010-09-18 2017-04-05 Fairchild Semiconductor Corporation Multi-die mems package
EP2616772B1 (en) 2010-09-18 2016-06-22 Fairchild Semiconductor Corporation Micromachined monolithic 3-axis gyroscope with single drive
KR101311966B1 (ko) 2010-09-20 2013-10-14 페어차일드 세미컨덕터 코포레이션 감소된 션트 커패시턴스를 갖는 관통 실리콘 비아
KR101332701B1 (ko) 2010-09-20 2013-11-25 페어차일드 세미컨덕터 코포레이션 기준 커패시터를 포함하는 미소 전자기계 압력 센서
JP2013038530A (ja) * 2011-08-05 2013-02-21 Seiko Epson Corp Ｍｅｍｓ振動子および発振器
US9062972B2 (en) 2012-01-31 2015-06-23 Fairchild Semiconductor Corporation MEMS multi-axis accelerometer electrode structure
US8978475B2 (en) 2012-02-01 2015-03-17 Fairchild Semiconductor Corporation MEMS proof mass with split z-axis portions
US8754694B2 (en) 2012-04-03 2014-06-17 Fairchild Semiconductor Corporation Accurate ninety-degree phase shifter
US8742964B2 (en) 2012-04-04 2014-06-03 Fairchild Semiconductor Corporation Noise reduction method with chopping for a merged MEMS accelerometer sensor
US9488693B2 (en) 2012-04-04 2016-11-08 Fairchild Semiconductor Corporation Self test of MEMS accelerometer with ASICS integrated capacitors
EP2647955B8 (en) 2012-04-05 2018-12-19 Fairchild Semiconductor Corporation MEMS device quadrature phase shift cancellation
US9069006B2 (en) 2012-04-05 2015-06-30 Fairchild Semiconductor Corporation Self test of MEMS gyroscope with ASICs integrated capacitors
KR102058489B1 (ko) 2012-04-05 2019-12-23 페어차일드 세미컨덕터 코포레이션 멤스 장치 프론트 엔드 전하 증폭기
EP2647952B1 (en) 2012-04-05 2017-11-15 Fairchild Semiconductor Corporation Mems device automatic-gain control loop for mechanical amplitude drive
KR101999745B1 (ko) 2012-04-12 2019-10-01 페어차일드 세미컨덕터 코포레이션 미세 전자 기계 시스템 구동기
US9625272B2 (en) 2012-04-12 2017-04-18 Fairchild Semiconductor Corporation MEMS quadrature cancellation and signal demodulation
DE102013014881B4 (de) 2012-09-12 2023-05-04 Fairchild Semiconductor Corporation Verbesserte Silizium-Durchkontaktierung mit einer Füllung aus mehreren Materialien
CN113316486B (zh) * 2018-11-16 2022-10-18 维蒙股份公司 电容式微机械超声换能器及其制造方法

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TWI460120B (zh) * 2010-03-04 2014-11-11 Fujitsu Ltd 製造ｍｅｍｓ裝置之方法及ｍｅｍｓ裝置

Also Published As

Publication number Publication date
US7617593B2 (en) 2009-11-17
KR20040098542A (ko) 2004-11-20
US7102268B2 (en) 2006-09-05
CN1305751C (zh) 2007-03-21
CN1572716A (zh) 2005-02-02
TW200524819A (en) 2005-08-01
US20070001250A1 (en) 2007-01-04
JP2004337991A (ja) 2004-12-02
US20040251793A1 (en) 2004-12-16
JP4123044B2 (ja) 2008-07-23

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Legal Events

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MM4A Annulment or lapse of patent due to non-payment of fees