TWI253359B - Substrate processing device and liquid feeding device - Google Patents

Substrate processing device and liquid feeding device Download PDF

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Publication number
TWI253359B
TWI253359B TW093101977A TW93101977A TWI253359B TW I253359 B TWI253359 B TW I253359B TW 093101977 A TW093101977 A TW 093101977A TW 93101977 A TW93101977 A TW 93101977A TW I253359 B TWI253359 B TW I253359B
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TW
Taiwan
Prior art keywords
liquid
photoresist
substrate processing
processing apparatus
slit nozzle
Prior art date
Application number
TW093101977A
Other languages
Chinese (zh)
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TW200417418A (en
Inventor
Yoshinori Takagi
Takeshi Fukuchi
Hiroyuki Kitazawa
Minako Ando
Original Assignee
Dainippon Screen Mfg
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Publication date
Priority claimed from JP2003069952A external-priority patent/JP2004281645A/en
Priority claimed from JP2003069834A external-priority patent/JP4184124B2/en
Application filed by Dainippon Screen Mfg filed Critical Dainippon Screen Mfg
Publication of TW200417418A publication Critical patent/TW200417418A/en
Application granted granted Critical
Publication of TWI253359B publication Critical patent/TWI253359B/en

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    • EFIXED CONSTRUCTIONS
    • E06DOORS, WINDOWS, SHUTTERS, OR ROLLER BLINDS IN GENERAL; LADDERS
    • E06BFIXED OR MOVABLE CLOSURES FOR OPENINGS IN BUILDINGS, VEHICLES, FENCES OR LIKE ENCLOSURES IN GENERAL, e.g. DOORS, WINDOWS, BLINDS, GATES
    • E06B9/00Screening or protective devices for wall or similar openings, with or without operating or securing mechanisms; Closures of similar construction
    • E06B9/52Devices affording protection against insects, e.g. fly screens; Mesh windows for other purposes
    • DTEXTILES; PAPER
    • D02YARNS; MECHANICAL FINISHING OF YARNS OR ROPES; WARPING OR BEAMING
    • D02GCRIMPING OR CURLING FIBRES, FILAMENTS, THREADS, OR YARNS; YARNS OR THREADS
    • D02G3/00Yarns or threads, e.g. fancy yarns; Processes or apparatus for the production thereof, not otherwise provided for
    • D02G3/44Yarns or threads characterised by the purpose for which they are designed
    • D02G3/449Yarns or threads with antibacterial properties
    • AHUMAN NECESSITIES
    • A61MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61LMETHODS OR APPARATUS FOR STERILISING MATERIALS OR OBJECTS IN GENERAL; DISINFECTION, STERILISATION OR DEODORISATION OF AIR; CHEMICAL ASPECTS OF BANDAGES, DRESSINGS, ABSORBENT PADS OR SURGICAL ARTICLES; MATERIALS FOR BANDAGES, DRESSINGS, ABSORBENT PADS OR SURGICAL ARTICLES
    • A61L2202/00Aspects relating to methods or apparatus for disinfecting or sterilising materials or objects
    • A61L2202/20Targets to be treated
    • A61L2202/25Rooms in buildings, passenger compartments
    • EFIXED CONSTRUCTIONS
    • E06DOORS, WINDOWS, SHUTTERS, OR ROLLER BLINDS IN GENERAL; LADDERS
    • E06BFIXED OR MOVABLE CLOSURES FOR OPENINGS IN BUILDINGS, VEHICLES, FENCES OR LIKE ENCLOSURES IN GENERAL, e.g. DOORS, WINDOWS, BLINDS, GATES
    • E06B9/00Screening or protective devices for wall or similar openings, with or without operating or securing mechanisms; Closures of similar construction
    • E06B9/52Devices affording protection against insects, e.g. fly screens; Mesh windows for other purposes
    • E06B2009/524Mesh details
    • EFIXED CONSTRUCTIONS
    • E06DOORS, WINDOWS, SHUTTERS, OR ROLLER BLINDS IN GENERAL; LADDERS
    • E06BFIXED OR MOVABLE CLOSURES FOR OPENINGS IN BUILDINGS, VEHICLES, FENCES OR LIKE ENCLOSURES IN GENERAL, e.g. DOORS, WINDOWS, BLINDS, GATES
    • E06B9/00Screening or protective devices for wall or similar openings, with or without operating or securing mechanisms; Closures of similar construction
    • E06B9/52Devices affording protection against insects, e.g. fly screens; Mesh windows for other purposes
    • E06B2009/527Mounting of screens to window or door

Landscapes

  • Engineering & Computer Science (AREA)
  • Structural Engineering (AREA)
  • Coating Apparatus (AREA)
  • Mechanical Engineering (AREA)
  • Textile Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Insects & Arthropods (AREA)
  • Pest Control & Pesticides (AREA)
  • Architecture (AREA)
  • Civil Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

This invention provides a high-precision device for transporting treating liquid, which generates no micro particles. A photoresist pump 81 and a driving device 82 are disposed in a liquid feeding device 80 for transporting a photoresist (treating liquid) to a slit nozzle 41. A small-diameter first corrugated pipe, a large-diameter second corrugated pipe, a joint part for the first and the second corrugated pipes and a pipe constituting the photoresist flow passage are disposed in the photoresist pump 81. Through the driving device 82 in figure 3 to move the joint part downwards, the internal volumetric capacity is reduced so that the photoresist in the pipe is transported to the slit nozzle 41. Moreover, through the driving device 82 in figure 3 to move the joint part downwards, the internal volumetric capacity is increased so that the photoresist is drawn to the photoresist pump 81.

Description

1253359 玖、發明說明: 【發明所屬之技術領域】 本發明係關於一種輸送塗敷於基板上之處理液之技術。 【先前技術】 於基板上塗敷光阻液荨處理液時,已知係藉由注射泵(活 塞泵)、波紋管泵、齒輪泵或隔板泵等各種泵,輸送光阻液 之送液裝置,及以一定壓力輸送光阻液之壓送型裝置等。 特別是藉由細縫喷嘴塗敷光阻液之細縫塗敷機,係依據 細縫噴嘴之移動速度與供給之光阻液量來決定塗敷於基板 上之光阻液之膜厚。因此,為求高精確度地控制光阻液之 膜厚’先前係使用波紋管泵或活塞泵。 但疋,存在著波紋管泵容易在輸送之光阻液内產生脈 動,以及因波紋管部分在構造上必然存在狹小之間隙,實 質上無法完全洗淨該部分等之問題。因而細縫塗敷機中主 要係採用活塞泵作為輸送光阻液之機構。此種使用活塞泵 之細縫塗敷機如揭示於專利文獻1中。 圖11係顯示用於專利文獻丨所揭示之細縫塗敷機上之送 液機構100構造之概略圖。送液機構1〇〇係由:活塞泵H0、 配管機構120及驅動機構13〇構成。活塞泵11〇具備:卿筒 111 /舌基112、密封材料113及排出口 114。此外配管機構 一備·排出配官121與排出閥丨22。再者,驅動機構丨3 〇 =備:馬達m、球狀螺絲132及螺母構件133。另外,驅動 ,構13Git -步具備降低馬達131之旋轉速度用之減速機 等,不過省略圖式。1253359 发明Invention Description: TECHNICAL FIELD The present invention relates to a technique for conveying a treatment liquid applied to a substrate. [Prior Art] When a photoresist liquid helium treatment liquid is applied to a substrate, it is known that a liquid supply device for transporting a photoresist liquid by various pumps such as a syringe pump (piston pump), a bellows pump, a gear pump, or a diaphragm pump And a pressure feed type device that transports the photoresist liquid at a certain pressure. In particular, a slit coater for applying a photoresist by a slit nozzle determines the film thickness of the photoresist applied to the substrate in accordance with the moving speed of the slit nozzle and the amount of the photoresist. Therefore, in order to control the film thickness of the photoresist with high precision, a bellows pump or a piston pump has been used. However, there is a problem that the bellows pump is apt to generate pulsation in the transported photoresist, and that there is a narrow gap in the structure of the bellows portion, and it is impossible to completely clean the portion. Therefore, the main purpose of the slit coater is to use a piston pump as a mechanism for conveying the photoresist. Such a slit coater using a piston pump is disclosed in Patent Document 1. Fig. 11 is a schematic view showing the configuration of a liquid supply mechanism 100 used in a slit coater disclosed in the patent document. The liquid supply mechanism 1 is composed of a piston pump H0, a piping mechanism 120, and a drive mechanism 13A. The piston pump 11A is provided with a cylinder 111/tongue base 112, a sealing material 113, and a discharge port 114. Further, the piping mechanism prepares and discharges the valve 121 and the discharge valve port 22. Furthermore, the drive mechanism 丨3 〇 = spare: motor m, ball screw 132 and nut member 133. Further, the drive 13Cit-step is provided with a speed reducer or the like for reducing the rotational speed of the motor 131, but the drawings are omitted.

O:\90\90600.DOC 1253359 活塞泵110之排出口 114連接於配管機構120之排出配管 121,排出配管121連通連接於圖上未顯示之細縫喷嘴。排 出配管121藉由將排出閥122形成開放狀態而與排出口 114 連通連接。 送液機構1 00於馬達13 1使球狀螺絲132旋轉時,螺母構件 133沿著球狀螺絲132移動。由於螺母構件133内固定有活塞 112,因此螺母構件133沿著球狀螺絲132移動時,活塞112 隨著該移動而沿著Z軸移動。螺母構件133之移動方向係藉 由馬達131之旋轉方向來限定。 自細縫喷嘴排出光阻液時,送液機構1〇〇使排出閥122形 成開放狀悲,並且藉由馬達13 1在(+ z)方向上驅動螺母構 件133,而將活塞Π2壓入卿筒m内,將卿筒lu内之光阻 液輸送至細缝噴嘴。 此外,吸引光阻液至卿筒1丨丨内時,將排出閥122形成閉 鎖狀態,並且使馬達1 3 1在與排出時相反方向上旋轉,藉由 使活塞112在自卿筒iU抽出之方向((_z)方向)上移動,自 圖上未顯示之吸引口吸引光阻液。藉由此種動作,專利文 獻1所揭示之細縫塗敷機可將光阻液輸送至細縫噴嘴。 專利文獻1 ··特開2000-334355公報 發明所欲解決之問題 然而上述裝置在押入活塞112時,存在著卿筒ιη内壁之 一部分暴露於外部氣氛中,造成附著之光阻液反變質之問 題。在此種狀態下,為求吸引新光阻液至卿筒iu内而移動 活塞112時’變質之光阻液汉混人所吸引之光阻液中,而造O: \90\90600.DOC 1253359 The discharge port 114 of the piston pump 110 is connected to the discharge pipe 121 of the piping mechanism 120, and the discharge pipe 121 is connected in communication to a slit nozzle not shown. The discharge pipe 121 is connected to the discharge port 114 by opening the discharge valve 122 to an open state. When the liquid supply mechanism 100 rotates the ball screw 132 by the motor 13 1 , the nut member 133 moves along the ball screw 132. Since the piston 112 is fixed in the nut member 133, when the nut member 133 moves along the ball screw 132, the piston 112 moves along the Z axis along with the movement. The direction of movement of the nut member 133 is defined by the direction of rotation of the motor 131. When the photoresist nozzle discharges the photoresist liquid, the liquid supply mechanism 1 causes the discharge valve 122 to form an open shape, and the piston member 2 is pressed into the cylinder by driving the nut member 133 in the (+z) direction by the motor 13 1 . In the cylinder m, the photoresist liquid in the cylinder is transported to the slit nozzle. Further, when the photoresist is sucked into the inside of the cylinder 1, the discharge valve 122 is brought into a locked state, and the motor 133 is rotated in the opposite direction to that of the discharge, by pulling the piston 112 out of the cylinder iU. Move in the direction ((_z) direction), attracting the photoresist from the suction port not shown on the figure. By this action, the slit coater disclosed in Patent Document 1 can transport the photoresist to the slit nozzle. However, when the above-mentioned apparatus is pushed into the piston 112, there is a problem that a part of the inner wall of the inner tube is exposed to the external atmosphere, causing the anti-deformation of the adhered photoresist liquid. . In this state, in order to attract the new photoresist liquid to the inside of the cylinder iu, the piston 112 is moved, and the photoresist is attracted by the photoresist.

O:\90\90600.DOC 1253359 成微粒子。 此外’為求除去此種變質之光阻液R,須拆下活塞112及 密封材料113等進行洗淨,而存在著泵保養費時之問題。 此外,由於移動活塞112之驅動機構(馬達131、球狀螺絲 132及螺母構件133)之加工精確度、控制精確度低,因而存 在著累母構件133 (活基112)進給精確度低,結果造成送液精 確度降低之問題。 再者,藉由驅動活塞泵11〇,密封材料113因與卿筒Hi 摩擦而磨m而存在著藉此產生之微粒子混人處理液 内’而須疋期更換密封材料11 3之問題。 有鑑於上述問題,本發明 筮― + i月之弟目的為不產生微粒子, 而高精確度地輸送處理液。 此外,第二目的為不使用密封材料113等磨損性構件,來 輸送處理液。 【發明内容】 板ί:: 上:問題,申請專利範圍第1項之發明係-種基 处、,/、係在基板上形成特定之處理液膜,且且備. =其係保持基板;細縫噴嘴,其係將前述特定、之處 至基板之主面上;供給機構,其係供 之處理液;及_手段,其係„述特定 = :述細縫喷嘴;前述送液手段具有器構件,= =内部容積;管路構件,其係内部形成 流路,並且可變更内部容積;及驅動手段, 前述容_牛之内部容積;前述容器構件之:部:=O:\90\90600.DOC 1253359 into fine particles. Further, in order to remove such a deteriorated photoresist liquid R, the piston 112 and the sealing material 113 must be removed for cleaning, and there is a problem that the maintenance of the pump takes time. In addition, since the machining mechanism (the motor 131, the ball screw 132, and the nut member 133) of the moving piston 112 is processed with high precision and low control accuracy, the feeding accuracy of the female member 133 (the active base 112) is low. As a result, the accuracy of the liquid supply is lowered. Further, by driving the piston pump 11 〇, the sealing material 113 is rubbed by rubbing with the cartridge Hi, and there is a problem that the particulate matter is mixed in the treatment liquid, and the sealing material 11 3 is replaced in a required period. In view of the above problems, the object of the present invention is to deliver the treatment liquid with high precision without generating fine particles. Further, the second object is to transport the treatment liquid without using a wear member such as the sealing material 113. [Summary of the Invention] The board of the invention has the problem that the invention is based on the first aspect of the invention, and the substrate is formed on the substrate, and the substrate is formed on the substrate, and the substrate is maintained. a slit nozzle which is specific to the main surface of the substrate; a supply mechanism for supplying the treatment liquid; and a means for describing the specific nozzle: the slitting nozzle; Member, = = internal volume; pipe member, which forms a flow path inside, and can change the internal volume; and driving means, the internal volume of the above-mentioned container; the part of the container member:

O:\90\90600.DOC 1253359 述管路構件,在前述容器構件與前述管路構件間之空 封有間接液。 玉 此外,申請專利範圍第2項之發明,係如申請專利範圍第 1項發明之基板處理裝置,#中前述容器構件彼此内徑不 同,且内部包含彼此連通之第一及第二波故管,前述驅動 手段使前述第一及第二波紋管之邊界近旁在特定之方向上 移動。 此外,申請專利範圍第3項之發明,係如申請專利範圍第 ,明之基板處理裝置’其中前述細縫噴嘴係對基板相對 ^動’同時排出前述特定之處理液,前述第—及第二波紋 :之邊界近旁移動之速度控制成與前述細縫噴嘴之移動速 度同步之速度。 此外,申請專利範圍第4項之發明,係如申請專利範圍第 項發明之基板處理裝置,其中且備#制$、+ 、, 1 具備检制刖述驅動手段之控 又,w述控制手段具有:固定容量供給手段,盆係栌 流液手段輸送之前述特定處理液之輸送量;及固: 段’其係控制前述送液手段輸送前述特定處理 :二專:範圍第5項之發明’係如申請專利範圍第 於前述管料^㈣置,其巾料❹手段㈣有分別位 吸引口::出吸引°及排“,並配置成前述 方。 出口中之任何一方之高度位置低於另— 此外,申請專利範圍第6項之發明,係如申請專利範圍第O:\90\90600.DOC 1253359 A pipe member in which an indirect liquid is sealed between the container member and the pipe member. In addition, the invention of claim 2 is the substrate processing apparatus according to the first aspect of the invention, wherein the container members have different inner diameters, and the first and second wave tubes are connected to each other. The driving means moves the vicinity of the boundary between the first and second bellows in a specific direction. In addition, the invention of claim 3 is the substrate processing apparatus of the invention, wherein the slitting nozzle is opposite to the substrate while discharging the specific processing liquid, the first and second corrugations. The speed at which the boundary moves is controlled to be at a speed synchronized with the moving speed of the slit nozzle. In addition, the invention of claim 4 is the substrate processing apparatus according to the invention of claim No. 1, wherein the preparation of the $, +, and 1 has the control of the detection means, and the control means Having: a fixed capacity supply means, a delivery amount of the specific treatment liquid conveyed by the potted turbulent means; and a solid portion: controlling the delivery of the liquid supply means to the specific treatment: the second invention: the invention of the fifth item For example, if the scope of the patent application is set in the above-mentioned tube material (4), the towel material means (4) have a separate suction port: the suction point and the row are arranged, and are arranged in the foregoing side. The height position of any one of the outlets is lower than In addition, in addition, the invention of claim 6 of the scope of patent application is as for the scope of patent application.

O:\90\90600.DOC -9- 1253359 !項努明之基扳處理裝置,其中前述供给 特定處理液之緩衝槽,前述 一有1了存前述 壓下吸引前述特定之處理液:^使前述送液手段在大氣 此外,申請專利範圍第7項之發明 6項發明之基板處理褒置,其中前述緩衝利範圍第 於前述細縫喷嘴之排出口之高度。 a液面设定成低 此外,申請專利範圍第8項之發明, 6項發明之基板處理裝置,…中睛專利範圍第 ^ 月丨述供給機構進一 +且女士 可述緩衝槽内補充前述特定處理 ^步具有在 手段以特㈣力將貯存於前述緩衝槽=述=補充 理液輸送至前述細縫噴嘴。 a.疋之處 此外,申請專利範圍第9項之發 6項發明之基板處理穿置,复中:係如申請專利範圍第 定手段,其係測定貯存於前述缓械構進一步具有測 液量。 別也讀槽内之前述特定之處理 第月申請專利範圍第1〇項之發明,係如申請專利範圍 ❹由^之基板處理裝置,其中進—步具備預備流路,其 由^可述補充手段加塵輸送前述特定之處理液時,不經 嘴。1液手段’而將前述特定之處理液導入前述細縫嗔 第^:"專利範圍第U項之發明’係如申請專利範圍 Z項發明之基板處理裝置,其中進一步具倩:送液選擇 栌二其Γ在將前述特定之處理液輸送至前述細縫喷嘴 、擇错由驅動河述驅動手段來送液,與藉由前述補充O:\90\90600.DOC -9- 1253359 The base plate processing device of the present invention, wherein the buffer tank for supplying the specific treatment liquid, the first one has the above-mentioned pressure to attract the specific treatment liquid: Further, the liquid supply means is in the atmosphere, and the substrate processing apparatus according to the invention of claim 7 is characterized in that the buffering range is the height of the discharge port of the slit nozzle. a liquid level is set to be low. In addition, the invention of claim 8 of the patent scope, the substrate processing apparatus of the 6 inventions, the middle of the patent range, the supply unit is added to the + and the woman can add the aforementioned specificity in the buffer tank. The processing step is carried out by means of a special (four) force to be stored in the buffer tank = said = supplementary fluid to the aforementioned slit nozzle. a. 此外 此外 , , 申请 申请 申请 此外 此外 此外 此外 此外 此外 此外 此外 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板. The invention of the first application of the first application of the patent application of the first month of the present invention is a substrate processing apparatus of the patent application scope, wherein the advance step has a preparatory flow path, which is supplemented by The method of dusting and conveying the specific treatment liquid does not pass through the mouth. The first liquid processing means, and the specific processing liquid is introduced into the above-mentioned sew 嗔 嗔 : 发明 发明 发明 发明 发明 系 系 系 系 系 系 系 系 系 系 系 系 如 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 : : The second is to transport the specific treatment liquid to the slit nozzle, and the error is driven by the driving method of the river, and supplemented by the foregoing

O:\90\90600.DOC -10- 1253359 手段來送液之任何一方;及流 前吟&擇手段,其係選擇經由 k/之手段輸送,或是經由前述預備流路輸送。 此外’申請專利範圍第12項之菸 你丄士 第"乐貝之^明,係如申請專利範圍 開閉前、+.% /、中則述流路選擇手段具有 開閉則述預備流路之閥。 此外,申請專利範圍第13項之發 -d Irm ^ 係如申睛專利範圍 弟1項發明之基板處理裝置,苴 前述衮哭媸从 /、中則述达液手段具有··數個 “冓件,及逐一配置於前述數 個前述管路構件。 偁仵内W之數 此外,申請專利範圍第丨4項之發 ^ π 、<钐明,係如申請專利範圍 弟13項發明之基板處理 使总—乂 一中進一步具備送液配管, i =料數個容器構件與前述細缝喷嘴之間形成前述特 ^液^路’在前述細縫喷嘴上設置數個處理液供給 口,並且前述送液配管係一對一 ^ , 對地連接珂述數個處理液供 a 口與前述數個容器構件。 、 此外,申睛專利範圍第]5項發 斤Λ 知月係如申請專利範圍 弟4項發明之基板處理裝置,盆 .,、中進一步具備膜厚檢測手 形成於基板表面之前述薄膜之厚度,前述^ =:t前Γ厚檢測手段之檢測結果,控制前述_ 抽;構使則述潯膜之厚度均一。 此外,申請專利範圍第16項之發明,係如申 第13項發明之基板處理裝置, 巳 1 具中則述驅動機構係分 立地變更驅動前述數個容器構件之内部容積。、 此外,申請專利範圍第17項發二 ^明係如申請專利範圍O:\90\90600.DOC -10- 1253359 means to send any one of the liquids; and the flow before and after the selection means, which are selected to be transported by means of k/ or via the aforementioned preparatory flow path. In addition, 'the patent of the 12th item of the patent application scope is your gentleman's number" Lebei's ^ Ming, before the opening and closing of the patent application scope, +.% /, the middle of the flow path selection means has the opening and closing, then the preparatory flow path valve. In addition, the hair-d Irm ^ of the thirteenth application patent is a substrate processing apparatus of the invention of the invention of the scope of the patent application, and the above-mentioned crying 媸 / 、 、 述 述 手段 手段 手段 手段 手段 手段 手段 手段 手段 手段 手段And a plurality of the above-mentioned pipe members are disposed one by one. The number of W in the 偁仵 此外 此外 此外 此外 申请 申请 申请 申请 , , , , , , , , , , , , , , The treatment further includes a liquid supply pipe, and i = a plurality of container members and the slit nozzle are formed between the plurality of nozzles, and a plurality of processing liquid supply ports are provided on the slit nozzle, and The liquid feeding pipe is connected one by one, and a plurality of processing liquids are connected to the ground to supply a port and the plurality of container members. Further, the scope of the patent patent is hereinafter referred to as the fifth item of the cigarette. Further, the substrate processing apparatus of the invention of the fourth aspect further includes a thickness of the film formed on the surface of the substrate by the film thickness detecting hand, and the detection result of the thickness detecting means before the ^=:t, controlling the _ pumping; Make the thickness of the ruthenium film uniform. The invention of claim 16 is the substrate processing apparatus according to the thirteenth aspect of the invention, wherein the drive mechanism separately changes the internal volume of the plurality of container members. Further, the patent application scope Item 17 is issued as follows:

O:\90\90600_DOC -11 - 1253359 < 1 ·第一種實施形態> < 1 · 1構造之說明> 圖係”、、員不本發明霄施形態之基板處理裝置〗之概略立體 圖。圖2係基板處理裝置1之本體2之正面圖。 基板處理裝置i大致上區分成本體2與控制系統6,並將製 ㈣晶顯示裝置之畫面面板用之方形玻璃基板作為被處理 基板9〇,在選擇性蝕刻形成於基板90表面之電極層等之處 :中’構成在基板90表面塗敷光阻液之塗敷裝置(細縫塗敷 機)。因此,本實施形態之細縫喷嘴41可對基板9〇排出光阻 液。另外,基板處理裝置1除液晶顯示裝置用之玻璃基板 外,一般而言,亦可變形用作在平面板顯示裝置用之各種 基板上塗敷處理液(藥液)之裝置。 本體2具備載台3,其係作為搭載被處理基板卯而加以保 持用之保持台之功能,並且亦作為附屬之各機構之基座功 能。載台3係立方體形狀之一體石製,其上面(保持面3〇)及 側面加工成平坦面。 載台3之上面形成水平面,並成為基板9〇之保持面3〇。保 持面30上分布形成有多數個真空吸著口,各真空吸著口連 通連接於圖上未顯示之真空泵。於基板處理裝置丨中處理基 板90時,藉由吸著基板90,而將基板9〇保持在特定之水平 位置。 該保持面30中夾著基板90之保持區域(保持基板9〇之區 域)之兩端部上固定大致水平方向上平行延伸之一對移動 軌道31a。移動軌道31a導引固定於橋接構造4兩端部之支撐 O:\90\90600.DOC -13- 1253359 =塊31b與橋接構造4之移動(將移動方向限定成特定之方 °)。亦即,移動軌道31_成將橋接構造4支撐於保持面30 上方之線性導引。 在載台3之上方設有自該載台3兩側部分大致水平地架設 ^橋接構造4。橋接構造4主要由:以碳_脂為f料之喷 嘴支樓部40;及支撐其兩端之料機構43,44構成。 喷嘴支撐部40内安裝冑:細缝喷嘴41、間隙感測器似 送液機構80。 上連接有對細縫噴嘴41 。此外,在細縫喷嘴41O:\90\90600_DOC -11 - 1253359 < 1 · First Embodiment><1·1 Description of Structure> Diagram, and the outline of the substrate processing apparatus of the present invention Fig. 2 is a front view of the main body 2 of the substrate processing apparatus 1. The substrate processing apparatus i substantially separates the cost body 2 from the control system 6, and uses a square glass substrate for the screen panel of the (four) crystal display device as the substrate to be processed. In the case where the electrode layer formed on the surface of the substrate 90 is selectively etched, etc., a coating device (slit coater) for applying a photoresist on the surface of the substrate 90 is formed. Therefore, the thickness of this embodiment is fine. The slit nozzle 41 can discharge the photoresist liquid to the substrate 9. In addition to the glass substrate for the liquid crystal display device, the substrate processing apparatus 1 can be generally modified to be applied to various substrates for the flat panel display device. Device for liquid (medicine solution) The main body 2 is provided with a stage 3 which functions as a holding table for holding a substrate to be processed, and also serves as a base function of each of the attached mechanisms. One shape The upper surface (holding surface 3〇) and the side surface are processed into a flat surface. The upper surface of the stage 3 forms a horizontal surface and serves as a holding surface 3〇 of the substrate 9. The plurality of vacuum suction ports are formed on the holding surface 30, Each of the vacuum suction ports is connected to a vacuum pump (not shown). When the substrate 90 is processed in the substrate processing apparatus, the substrate 90 is held at a specific horizontal position by sucking the substrate 90. The holding surface 30 A pair of moving rails 31a extending in a substantially horizontal direction in a substantially horizontal direction are fixed to both end portions of the holding region (the region of the holding substrate 9A) sandwiching the substrate 90. The moving rail 31a is guided and fixed to the support portions at both ends of the bridge structure 4. :\90\90600.DOC -13- 1253359 = movement of the block 31b and the bridge structure 4 (limiting the direction of movement to a specific square). That is, the moving rail 31_ supports the bridge structure 4 above the holding surface 30. The linear guide is provided. The bridge structure 4 is disposed substantially horizontally from the two sides of the stage 3, and the bridge structure 4 is mainly composed of: a nozzle branch portion 40 with carbon-fat as material; And a material mechanism 43 and 44 supporting both ends thereof. Inner support portion 40 is attached to the helmet: slit nozzle 41, like the gap sensors are connected to the feed nozzle 41 was slit mechanism 80. In addition, the slit nozzle 41.

延伸於水平Y方向之細縫噴嘴41 送處理液(光阻液)之送液機構8〇 液。此處所謂光阻塗敷區域,係指基板9〇之主面中欲塗敷 光阻液之區域,通常係自基板9G之全面積除去沿著端緣之 特定寬度區域之區域。 之下面’沿著Y軸方向設有排出口 41a。細縫噴嘴41藉由送 液機構80輸送光阻液,並藉由掃描基板9〇之表面,而在基 板90表面之特定區域(以下稱「光阻塗敷區域」)排出光阻 各間隙感測器42安裝於橋接構造4之噴嘴支撐部4〇上與 保持面30相對之位置,檢測與特定方向(一 z方向)之存在物 (如基板90及光阻膜)間之距離(間隙),並將檢測結果輸出至 控制系統6。另外,各個間隙感測器42宜安裝於構成光阻淹 敷區域之Y軸方向兩端部附近之上方位置。藉此,兩個間隙 感測态42之各個安裝位置係配置於γ軸方向 , 且+同之 位置上。 如此,藉由在喷嘴支撐部40上分別安裝細縫噴嘴Μ與間 O:\90\90600.DOC -14- 1253359 隙感測為42,來固定此等之相對位置關係。因此,控制系 統6可依據間隙感測器42之檢測結果來檢測基板90表面與 、、、田缝喷蓄4 1之距離。另外,本實施形態之基板處理裝置1 係具備兩個間隙感測器42,不過間隙感測器42數量並不限 定於此,亦可具備更多之間隙感測器42。 貝嘴支撐部40内,在細縫噴嘴4丨之上方位置設有送液機 構8〇。圖3係概略顯示將光阻液供給、輸送至細縫喷嘴4ι 用之構k圖。另外圖3中之各構造依需要以可與控制系統6 傳达、接收信號之狀態連接,可依據來自控制系統6之控制 信號分別動作。 基板處理I置1之供給光阻液之供給機構7〇具備:補充裝 置71、緩衝槽72及感測器73,並且於細 液用之配管一吸引配管74、開閉、:二 益77、止回閥78、排出配管79、開閉閥83,84及預備配管μ。 補充裝置71具有自光阻瓶供給光阻液至緩衝槽72之功 能。此外’亦具有壓送貯存於緩衝槽㈣之光阻液之功能。 緩衝槽72係藉由暫時料綠液,而分離除去混入光阻 液内之空氣用而設置。亦即,混入光阻液中之空氣於光阻 液貯存於緩衝槽72内時,係集中於緩衝槽”之 部,藉由後述之抽氣閥88形成開放&能、曰 风開敌狀恶,經由排氣配管89 而排出至裝置外。此外,緩衝槽72亦具有光阻㈣吸入光 阻液時,係在大氣壓力下吸引之功能。 感測器73係為求檢測貯存於緩衝槽72 θ 1之光阻液量而設 置。進-步詳細而言’感測器73包含3個液面感測器,各個The slit nozzle 41 extending in the horizontal Y direction sends the liquid supply mechanism 8 of the treatment liquid (photoresist). Here, the photoresist coating region refers to a region of the main surface of the substrate 9 to which the photoresist is to be applied, and usually a region of a specific width region along the edge is removed from the entire area of the substrate 9G. The lower side is provided with a discharge port 41a along the Y-axis direction. The slit nozzle 41 transports the photoresist by the liquid supply mechanism 80, and by scanning the surface of the substrate 9, the specific area of the surface of the substrate 90 (hereinafter referred to as "resistance coating region") is discharged. The detector 42 is mounted on the nozzle support portion 4 of the bridge structure 4 at a position opposite to the holding surface 30, and detects the distance (gap) between the object (such as the substrate 90 and the photoresist film) in a specific direction (a z direction). And outputting the detection result to the control system 6. Further, each of the gap sensors 42 is preferably mounted at an upper position in the vicinity of both end portions in the Y-axis direction of the photoresist flooding region. Thereby, the respective mounting positions of the two gap sensing states 42 are arranged in the γ-axis direction and at the same position. Thus, the relative positional relationship is fixed by mounting the slit nozzle Μ and the gap O: \90\90600.DOC -14 - 1253359 gap sensing 42 on the nozzle support portion 40, respectively. Therefore, the control system 6 can detect the distance between the surface of the substrate 90 and the field spray 4 1 based on the detection result of the gap sensor 42. Further, the substrate processing apparatus 1 of the present embodiment includes two gap sensors 42, but the number of the gap sensors 42 is not limited thereto, and more gap sensors 42 may be provided. In the mouth support portion 40, a liquid supply mechanism 8 is provided at a position above the slit nozzle 4?. Fig. 3 is a schematic view showing a configuration for supplying and transporting the photoresist to the slit nozzle 4m. Further, the respective structures in Fig. 3 are connected in a state in which signals can be transmitted and received by the control system 6, and can be respectively operated in accordance with control signals from the control system 6. The supply mechanism 7 for supplying the resist liquid to the substrate processing I is provided with the replenishing device 71, the buffer tank 72, and the sensor 73, and the pipe for the fine liquid is sucked into the pipe 74, opened and closed, and the second is 77. The return valve 78, the discharge pipe 79, the opening and closing valves 83, 84, and the preliminary pipe μ. The replenishing device 71 has a function of supplying the photoresist from the photoresist bottle to the buffer tank 72. In addition, it also has the function of pumping the photoresist liquid stored in the buffer tank (4). The buffer tank 72 is provided by temporarily separating the green liquid and separating and removing the air mixed in the photoresist. That is, the air mixed in the photoresist liquid is concentrated in the buffer tank when the photoresist liquid is stored in the buffer tank 72, and is opened and ventilated by the air suction valve 88 described later. Evil is discharged to the outside of the device via the exhaust pipe 89. In addition, the buffer groove 72 also has a function of attracting at atmospheric pressure when the photoresist (4) is sucked into the photoresist. The sensor 73 is stored in the buffer tank for detection. 72 θ 1 of the amount of photoresist is set. Step-by-step details 'Sensor 73 contains 3 liquid level sensors, each

O:\90\90600.DOC •15- 1253359 上限量及下限量。經感 液面感測為係配置成可檢測溢流 測器7 3檢測出之液面位置資訊傳送至控制系統6,控制系統 6依據該檢測結果生成控制信號,來控制補充裝置71。藉此 可預先在緩衝槽72内貯存適切量之光阻液。 缓衝槽72㈣转_43之财,而與細射糾大致 相同高度之位置,不過圖2上並未顯示,緩衝槽72内之液面 設定在比細缝噴嘴41之排出口 41a稍微下方位置。 吸引配管74及排出配管79係經由光阻泵81將光阻液導入 細缝喷嘴41用之配管。光阻液於進行流路開閉之開閉闊乃, 76依據控制系統6之控制信號均在開放狀態時,通過吸引配 官74被光阻栗81吸弓|後’經由排出配管79輸送至細縫喷嘴 41 〇 如圖3所示,過濾器77係設於光阻泵81之初級側,並具有 自輸送至細縫喷嘴41之光阻液中除去雜質之功能。此外, 止回閥78係為求防止吸引配管74内之光阻液逆流而配置, 圖3中係僅在右側方向使光阻液通過之閥。 開閉閥83, 84及預備配管85係不經由光阻泵81而輸送光 阻液用之構造。亦即,將開閉閥75形成閉鎖狀態,將開閉 閥83, 84形成開放狀態時,光阻液不經由吸引配管74、光阻 泵8 1及排出配管79,而係通過預備配管85輸送至細縫噴嘴 41。亦即,控制系統6與開閉閥75, 83, 84主要相當於本發明 之流路選擇手段。 此外,基板處理裝置1具備生成自供給機構70送出至細縫 喷嘴41用之驅動力之送液機構80。O:\90\90600.DOC •15- 1253359 Upper limit and lower limit. The liquid level sensing is configured to transmit the liquid level position information detected by the detectable overflow detector 73 to the control system 6, and the control system 6 generates a control signal based on the detection result to control the replenishing device 71. Thereby, a suitable amount of photoresist can be stored in the buffer tank 72 in advance. The buffer tank 72 (four) is turned to the position of the same height as the fine shot, but not shown in Fig. 2, the liquid level in the buffer tank 72 is set slightly lower than the discharge port 41a of the slit nozzle 41. . The suction pipe 74 and the discharge pipe 79 introduce the photoresist liquid into the pipe for the slit nozzle 41 via the resist pump 81. When the control signal of the control system 6 is in an open state, the photoresist is sucked by the light-resistance 81 by the suction valve 74, and then sent to the slit through the discharge pipe 79. The nozzle 41 is shown in Fig. 3. The filter 77 is provided on the primary side of the resistive pump 81 and has a function of removing impurities from the photoresist liquid sent to the slit nozzle 41. Further, the check valve 78 is disposed to prevent the photoresist liquid in the suction pipe 74 from flowing backward, and in Fig. 3, the valve is passed through only the photoresist in the right direction. The on-off valves 83, 84 and the preliminary piping 85 are configured to convey the photoresist without passing through the resist pump 81. In other words, when the opening and closing valve 75 is in a closed state and the opening and closing valves 83 and 84 are in an open state, the photoresist liquid is transported to the thin portion through the preliminary piping 85 without passing through the suction pipe 74, the photoresist pump 8 1 and the discharge pipe 79. The nozzle 41 is slit. That is, the control system 6 and the opening and closing valves 75, 83, 84 mainly correspond to the flow path selecting means of the present invention. Further, the substrate processing apparatus 1 includes a liquid supply mechanism 80 that generates a driving force for feeding from the supply mechanism 70 to the slit nozzle 41.

0:\90\90600.DOC -16- 1253359 圖4係顯示送液機構8〇之詳細構造圖。送液機構8〇主要由 光阻泵81及驅動機構82構成。另外,圖4中顯示有光阻泵81 之剖面。 光阻泵81具有··第一波紋管81丨、第二波紋管812、接合 構件8 13及管路8 14。此外,光阻泵8丨上分別設有:吸引口 8 1 5 ’其係吸引光阻液時作為光阻液之入口;及排出口 8丨6, 其係排出光阻液時作為光阻液之出口。吸引口 8丨5經由吸引 配官74而連通連接於供給機構70,排出口 8 16經由排出配管 79而連通連接於細缝噴嘴41。此外,吸引口 81 5設置成位於 排出口 816之下方。 ’另外’為求提高自細縫喷嘴4丨之排出精確度,宜縮短自 光阻泵8 1之排出口 § 16至細縫喷嘴4丨之距離。本實施形態之 基板處理裝置1為求縮短該距離,送液機構80係配置於噴嘴 支撐部40上,因此可提高細縫喷嘴4丨之排出精確度。 第一波紋管811及第二波紋管812係由可沿著z轴方向伸 縮之構件而構成。此外,第一波紋管811之(一Z)側之端部 14第一波紋管812之(+ z)側之端部係經由接合構件8丨3彼 此固著,並且内部彼此連通。此外,第一波紋管811與第二 波紋管812之兩端經由蓋81〇而支撐於圖外之剛體上,使其 合計長度X(圖4)保持一定。由於第一波紋管811之内徑面積 (垂直於z轴之面之面積)小於第二波紋管812之内徑面積, 因此藉由在第一波紋管811伸長狀態與第二波紋管812伸長 狀態之間改變狀態,即可變更光阻泵81之容積。 在第一波紋管811及第二波紋管812内部配置有管路0: \90\90600.DOC -16- 1253359 Fig. 4 is a detailed structural view showing the liquid supply mechanism 8A. The liquid supply mechanism 8 is mainly composed of a resist pump 81 and a drive mechanism 82. In addition, a cross section of the resistive pump 81 is shown in FIG. The resistive pump 81 has a first bellows 81A, a second bellows 812, a joint member 813, and a pipe 814. In addition, the photoresist pump 8 is respectively provided with a suction port 8 1 5 'which serves as an entrance of the photoresist liquid when the photoresist is attracted, and a discharge port 8丨6 which serves as a photoresist liquid when the photoresist is discharged. Export. The suction port 8丨5 is connected to the supply mechanism 70 via the suction valve 74, and the discharge port 8 16 is connected to the slit nozzle 41 via the discharge pipe 79. Further, the suction port 81 5 is disposed to be located below the discharge port 816. In addition, in order to improve the discharge accuracy of the slit nozzle 4, it is preferable to shorten the distance from the discharge port § 16 of the photoresist pump 8 1 to the slit nozzle 4 . In the substrate processing apparatus 1 of the present embodiment, in order to shorten the distance, the liquid supply mechanism 80 is disposed on the nozzle support portion 40, so that the discharge accuracy of the slit nozzle 4 can be improved. The first bellows 811 and the second bellows 812 are constituted by members that are contractible in the z-axis direction. Further, the end portions of the (1) side of the first bellows 811 on the (+z) side of the first bellows 812 are fixed to each other via the joint members 8丨3, and the insides communicate with each other. Further, both ends of the first bellows 811 and the second bellows 812 are supported by the rigid body outside the figure via the cover 81, so that the total length X (Fig. 4) is kept constant. Since the inner diameter area of the first bellows 811 (the area perpendicular to the surface of the z-axis) is smaller than the inner diameter area of the second bellows 812, the state of the first bellows 811 is extended and the second bellows 812 is extended. The volume of the photoresist pump 81 can be changed by changing the state. A conduit is disposed inside the first bellows 811 and the second bellows 812

O:\90\90600.DOC -17- 1253359 814。管路814係由管狀之可塑性構件而構成,兩端分別連 通連接於吸引口⑴及排出口 816。亦即,管路814係構成光 阻液之流路。另外,如圖4所示’本實施形態之基板處理裝 置1係沿著Z軸配置於大致垂直方向上。 被第-波紋管811、第二波紋管812及管路814包圍之*門 内封有間接液LQ。間接液LQ係使用對壓力及溫度等之變 化二其體積變化率低之液體。藉此,即使第一波紋管8" 及第二波紋管812因伸縮而變形時,間接液1〇之體積幾乎 不改變。 藉由此種構造,本實施形態之基板處理裝置丨於第一波纹 管8Π伸長時(使接合構件813向下方移動時),間接液[。藉 由被光阻泵81之第一波紋管81丨及第二波紋管812包圍之容 積減少而加壓。由於間接液LQ係即使加壓其體積幾乎不減 少之液體,因此管路814藉由加壓之間接液LQ而收縮(縮 小),管路814内加壓。此時,控制系統6使開閉閥料及廢液 閥86形成閉鎖狀態,並且使開閉閥76形成開放狀態時,管 路8 14内之光阻液自排出口 816排出,並向細縫喷嘴“輸 送。另外,由於在吸引口 8 1 5側設有止回閥78,因此管路8工4 内之光阻液不致於自吸引口 8 1 5逆流。 另外’第二波紋管伸長時(使接合構件813向上方移動 k )’被光阻泵8 1之第一波紋管8 11及第二波紋管8丨2包圍之 空間的谷積增加’間接液LQ減壓。由於間接液lq係即使減 壓其體積幾乎不增加之液體,因此管路814藉由間接液Lq 而膨脹,管路814内減壓。此時,控制系統使開閉閥76,84O:\90\90600.DOC -17- 1253359 814. The pipe 814 is composed of a tubular plastic member, and both ends are connected to the suction port (1) and the discharge port 816, respectively. That is, the conduit 814 constitutes a flow path for the photoresist. Further, as shown in Fig. 4, the substrate processing apparatus 1 of the present embodiment is disposed in a substantially vertical direction along the Z axis. The in-line liquid LQ is sealed in the * door surrounded by the first bellows 811, the second bellows 812, and the pipe 814. The indirect liquid LQ uses a change in pressure, temperature, etc., and a liquid whose volume change rate is low. Thereby, even if the first bellows 8" and the second bellows 812 are deformed by expansion and contraction, the volume of the indirect liquid 1〇 hardly changes. With such a configuration, the substrate processing apparatus according to the present embodiment is in the indirect liquid when the first bellows 8 is extended (when the joining member 813 is moved downward). The pressure is reduced by the decrease in the volume surrounded by the first bellows 81A and the second bellows 812 of the photoresist pump 81. Since the indirect liquid LQ system pressurizes the liquid whose volume is hardly reduced, the line 814 is contracted (reduced) by pressurizing the contact liquid LQ, and the line 814 is pressurized. At this time, when the control system 6 causes the opening and closing valve material and the waste liquid valve 86 to be in a locked state, and the opening and closing valve 76 is opened, the photoresist liquid in the pipe 8 14 is discharged from the discharge port 816, and is conveyed to the slit nozzle. In addition, since the check valve 78 is provided on the side of the suction port 815, the photoresist liquid in the pipe 8 is not reversed from the suction port 815. In addition, when the second bellows is extended (joining The member 813 moves upward k) 'the volume of the space surrounded by the first bellows 8 11 and the second bellows 8丨2 of the photoresist pump 8 1 increases 'indirect liquid LQ decompression. Since the indirect liquid lq system is even reduced The liquid whose pressure is hardly increased is pressed, so that the line 814 is expanded by the indirect liquid Lq, and the pressure is reduced in the line 814. At this time, the control system opens and closes the valve 76, 84.

O:\90\90600.DOC -18- 1253359O:\90\90600.DOC -18- 1253359

及廢液閥86形成閉鎖狀態時,緩衝槽72内之光阻液自 口 815被吸引至管路814内Q 亦即,光阻泵81具有可藉由使接合構件813沿著z軸方向 來回移動,反覆進行光阻液之吸引動作與排出動作,來輪 送光阻液之功能。 j 圖5係顯示驅動機構82之詳細構造圖。驅動機構u具備·· 基座82〇、驅動馬達821、球狀螺絲822、螺母構件823、安 裝構件824、導引825、軸承構件826及導引固定構件。?, 光阻泵8丨具有生成輸送光阻液用之驅動力之功能。本實施 形態之基板處理裝置藉由驅動馬達821生成之旋轉驅動 力,主要藉由包含球狀螺絲822與螺母構件823之構造而轉 換成直線運動驅動力,來形成光阻泵8丨之驅動力。 基座820係搭載驅動機構82各構造而予以一體化用之構 件。此外,基座820上適切設有固定於噴嘴支撐部扣用之構 件等,不過圖5省略圖式。如此,在將驅動機構82之各構造 形成一體構造之狀態下,藉由固定於喷嘴支撐部4〇上,可 提高驅動精確度。另外,基座82〇係以後述之導引825之導 引方向沿著Z軸而固定於喷嘴支撐部4〇上。 驅動馬達82 1係低速旋轉(500rpm以下)時速度精確度高 之DD(直接驅動)馬達。如此,藉由在驅動馬達821上採用 DD馬達,本貫施形悲之基板處理裝置丨不經由減速機等而 可直接連接球狀螺絲8 2 2與驅動馬達$ 21,因此可使裝置價 格低廉及小型化,並且可防止因減速機之精確度及齒隙等 k成螺母構件823之進給精確度降低。再者,與使用同步皮 O:\90\90600.DOC -19- 1253359 於螺母構件823之貫穿口旋入球狀螺絲822時,螺母構件 823沿著中心軸P,對球狀螺絲822在特定之方向上直線性移 動。由於螺母構件823與接合構件813係經由安裝構件 連結,因此使螺母構件823如前述地移動時,接合構件813 連動而在同一方向上移動。如此,基板處理裝置1之驅動馬 達82 1在中心轴p周圍之旋轉驅動力轉換成光阻泵8 1之z軸 方向之直線運動驅動力。另外,將螺母構件823沿著球狀螺 絲822向驅動馬達821側移動時之驅動馬達82丨之旋轉方向 稱為「正方向」。 再者,於螺母構件823上設有與導引825迎合用之導引部 (圖上未顯示)。該導引部内設有數個球,藉由螺母構件M3 與導引825經由該球而迎合,可抑制螺母構件823移動時之 摩擦。此外,在各球與球之間配置樹脂製間隔物或間隔球。 藉此,可抑制隨球之轉動及循環造成之振動及進給不均 ’因此可提南螺母構件8 2 3之速度精確度。 導引825與螺母構件823之導引部(圖上未顯示)迎合,且 藉由一對導引固定構件827,在基座820上與球狀螺絲822 一體組裝固定,並具有足夠之精確度與剛性。導引825具有 直線狀之導引軸J,並具有藉由與螺母構件823之迎合,將 藉由球狀螺絲8 2 2之旋轉而移動之螺母構件$ 2 3之移動方白 限定於沿著導引軸J之方向之功能。 如前述,螺母構件823係藉由球狀螺絲822旋轉而沿著球 狀螺絲822之中心軸P移動,不過中心軸P之方向會隨球狀螺 絲822之驅動振動專而變動。因此,僅球狀螺絲822無法精 O:\90\90600.DOC -21 - 1253359 石ί度良好地限定螺母構件823之移動方向。反之,由於導引 825係靜止’因此導引軸j之方向比中心軸ρ穩定。因此,籍 由驅動機構82之螺母構件823以導引轴j來限定移動方向, 可提高螺母構件823之移動速度及移動方向之精確度。 軸承構件826内,圖上未顯示之支撐用軸承設於内部,該 軸承抵接於球狀螺絲822。藉此,不阻礙球狀螺絲822在中 心軸ρ周圍之旋轉,而可將球狀螺絲822安裝於基座82〇上。 另外,為求提咼球狀螺絲822之旋轉剛性,考慮軸負荷,該 軸承係使用具有適切剛性等之構件。此外,藉由使用較大 型之軸承’可提高球狀螺絲822之旋轉穩定性。 回到圖3,基板處理裝置丨主要於保養等時使用之配管機 構具備:廢液閥86、廢液配管87、抽氣閥88及排氣配管的。 廢液閥86係開閉吸引配管74與廢液配管87間之流路用之 閥。廢液閥86依據控制系統6之控制信號進行開閉控制。廢 液配管87連通連接於圖上未顯示之回收機構,於廢液閥% 在開放狀態時,光阻泵81及吸引配管74内之光阻液經由廢 液配管8 7而回收至該回收機構内。 抽氣閥88係開閉緩衝槽72與排氣配管89間之流路用之 閥。抽氣閥88依據控制系統6之控制信號進行開閉控制。排 氣配管89連通連接於圖上未顯示之排氣泵,於抽氣閥“在 開放狀態時,緩衝槽72内與光阻液分離之空氣經由排氣配 管89而排氣。另外,該裝置内使用之全部閥係使用不因其 閥之動作而在配管内之液體上產生壓力變化及容積變化之 所謂消除型者。When the waste liquid valve 86 is in the locked state, the photoresist liquid in the buffer tank 72 is attracted from the port 815 to the inside of the pipe 814. That is, the photoresist pump 81 has the shutter member 81 movable back and forth along the z-axis. Move, repeat the attraction and discharge of the photoresist, and rotate the function of the photoresist. j FIG. 5 is a detailed configuration diagram showing the drive mechanism 82. The drive mechanism u includes a base 82A, a drive motor 821, a ball screw 822, a nut member 823, a mounting member 824, a guide 825, a bearing member 826, and a guide fixing member. ? The photoresist pump 8 has a function of generating a driving force for transporting the photoresist. The substrate processing apparatus according to the present embodiment is formed by the rotation driving force generated by the drive motor 821, and is mainly converted into a linear motion driving force by the structure including the ball screw 822 and the nut member 823, thereby forming the driving force of the resist pump 8丨. . The susceptor 820 is a member for mounting the respective structures of the drive mechanism 82 and integrating them. Further, the base 820 is provided with a member fixed to the nozzle support portion, etc., but the drawing is omitted in Fig. 5. As described above, in a state in which the respective structures of the drive mechanism 82 are integrally formed, the drive accuracy can be improved by being fixed to the nozzle support portion 4A. Further, the guide 82 is fixed to the nozzle support portion 4A along the Z-axis by the guide direction of the guide 825, which will be described later. The drive motor 82 1 is a DD (Direct Drive) motor with high speed accuracy when rotating at a low speed (below 500 rpm). In this way, by using the DD motor on the drive motor 821, the conventional substrate processing apparatus can directly connect the ball screw 8 2 2 and the drive motor $ 21 without a speed reducer or the like, thereby making the apparatus inexpensive. And miniaturization, and it is possible to prevent the accuracy of feeding of the nut member 823 due to the accuracy of the reducer and the backlash from being lowered. Furthermore, when the ball screw 822 is screwed into the through hole of the nut member 823 using the synchronous skin O:\90\90600.DOC -19-1253359, the nut member 823 is along the central axis P, and the ball screw 822 is specified. The direction moves linearly. Since the nut member 823 and the joint member 813 are coupled via the attachment member, when the nut member 823 is moved as described above, the joint member 813 moves in the same direction in conjunction with each other. Thus, the rotational driving force of the driving motor 82 1 of the substrate processing apparatus 1 around the central axis p is converted into the linear motion driving force of the resist pump 8 1 in the z-axis direction. Further, the direction in which the drive motor 82 is rotated when the nut member 823 is moved toward the drive motor 821 side along the ball screw 822 is referred to as "positive direction". Further, a guide portion (not shown) for welcoming the guide 825 is provided on the nut member 823. A plurality of balls are provided in the guide portion, and the nut member M3 and the guide 825 are engaged by the ball, and the friction when the nut member 823 is moved can be suppressed. Further, a resin spacer or a spacer ball is disposed between each ball and the ball. Thereby, vibration and feed unevenness caused by the rotation and circulation of the ball can be suppressed, so that the speed accuracy of the south nut member 8 2 3 can be improved. The guide 825 is engaged with the guiding portion (not shown) of the nut member 823, and is integrally assembled with the ball screw 822 on the base 820 by a pair of guiding fixing members 827, and has sufficient accuracy. With rigidity. The guide 825 has a linear guide shaft J and has a movement limit of the nut member $2 3 that is moved by the rotation of the ball screw 8 2 2 by the engagement with the nut member 823. The function of guiding the direction of the axis J. As described above, the nut member 823 is moved along the central axis P of the spherical screw 822 by the rotation of the ball screw 822, but the direction of the central axis P varies depending on the driving vibration of the spherical screw 822. Therefore, only the spherical screw 822 cannot be refined. O:\90\90600.DOC -21 - 1253359 The degree of movement of the nut member 823 is well defined. Conversely, since the guide 825 is stationary 'the direction of the guide axis j is more stable than the central axis ρ. Therefore, the nut member 823 of the drive mechanism 82 defines the moving direction with the guide shaft j, and the accuracy of the moving speed and the moving direction of the nut member 823 can be improved. In the bearing member 826, a support bearing (not shown) is provided inside, and the bearing abuts against the ball screw 822. Thereby, the ball screw 822 can be attached to the base 82A without hindering the rotation of the ball screw 822 around the center axis ρ. Further, in order to obtain the rotational rigidity of the ball screw 822, a bearing having a suitable rigidity or the like is used in consideration of the shaft load. Further, the rotational stability of the ball screw 822 can be improved by using a larger type of bearing. Referring back to Fig. 3, the substrate processing apparatus includes a waste liquid valve 86, a waste liquid pipe 87, an exhaust valve 88, and an exhaust pipe, which are mainly used for maintenance and the like. The waste liquid valve 86 is a valve for opening and closing the flow path between the suction pipe 74 and the waste liquid pipe 87. The waste liquid valve 86 performs opening and closing control in accordance with a control signal of the control system 6. The waste liquid pipe 87 is connected to a recovery mechanism (not shown), and when the waste liquid valve % is in an open state, the photoresist liquid in the resist pump 81 and the suction pipe 74 is recovered to the recovery mechanism via the waste liquid pipe 87. Inside. The purge valve 88 is a valve for opening and closing the flow path between the buffer tank 72 and the exhaust pipe 89. The suction valve 88 performs opening and closing control in accordance with a control signal of the control system 6. The exhaust pipe 89 is connected to an exhaust pump (not shown), and when the intake valve is "opened, the air separated from the photoresist in the buffer tank 72 is exhausted via the exhaust pipe 89. Further, the device is exhausted. All of the valves used in the system use a so-called elimination type that does not cause a pressure change or a volume change in the liquid in the pipe due to the operation of the valve.

O:\90\90600.DOC -22- 1253359 回到圖1及圖2,升降機構43, 44分設於細縫噴嘴41之兩 側JL藉由喷實支撐部4〇而與細縫喷嘴Μ連結。升降機構 43,44使細缝嗔嘴41並進地升降,並且亦用於調整細縫噴嘴 41在YZ平面内之姿勢。 橋接構造4之兩端部分別固定沿著載台3之兩側邊緣而分 別配置之-對AC空心線性馬達(以τ,簡稱為「線性馬 達」)50, 5卜 線性馬達5G係、具備··定子(加叫術與移動子鳩,並藉 由定子5〇a與移動子5〇b之電磁性相互作用而生成使橋接構 造4在X軸方向(沿著基板9〇表面之方向)上移動用之驅動力 之馬達。線性馬達50之移動量及移動方向可藉由控制系統6 之控制信號來㈣。料,線性馬達51亦具有大致相同之 功能及構造。 線性編碼器52, 53分別具備··刻度尺部及檢測子(圖上未 顯不)’檢測刻度尺部與檢測子之相對位置關係,而傳送至 控制系統6。各檢測子分別固定於橋接構造4之兩端部,線 性編碼器52, 53具有進行橋接構造4之位置檢測之功能。 控制系統6在内部具備:運算部6〇,其係依據程式處理各 種貧料;及記憶部6丨,其係儲存程式及各種資料。此外, 前面具備:操作部62,其係操作人員用於對基板處理裝置工 輸入必要之指示;及顯示部63,其係顯示各種資料。 控制系統6藉由圖上未顯示之電纜而與附屬於本體2之各 機構連接,並依據操作部62及各種感測器等之信號,控制 載台3、橋接構造4、升降機構43, 44、線性馬達50, 51、供O:\90\90600.DOC -22- 1253359 Returning to Fig. 1 and Fig. 2, the lifting mechanism 43, 44 is disposed on both sides of the slit nozzle 41. JL is separated from the slit nozzle by the sprayed support portion 4〇. link. The lifting mechanism 43, 44 causes the slit nozzle 41 to move up and down, and is also used to adjust the posture of the slit nozzle 41 in the YZ plane. The two ends of the bridge structure 4 are respectively fixed to the AC hollow linear motor (referred to as τ, simply referred to as "linear motor") 50 along the both side edges of the stage 3, and 5 linear motor 5G system is provided. a stator (additional and movable), and generated by the electromagnetic interaction of the stator 5〇a and the moving element 5〇b, so that the bridge structure 4 is in the X-axis direction (in the direction of the surface of the substrate 9) The driving force of the motor for moving. The moving amount and moving direction of the linear motor 50 can be controlled by the control signal of the control system 6. The linear motor 51 also has substantially the same function and configuration. The linear encoders 52, 53 respectively The scale portion and the detector (not shown) are detected to detect the relative positional relationship between the scale portion and the detector, and are transmitted to the control system 6. Each of the detectors is fixed to both ends of the bridge structure 4, The linear encoders 52 and 53 have a function of detecting the position of the bridge structure 4. The control system 6 includes therein: a calculation unit 6 that processes various poor materials according to a program; and a memory unit 6 that stores programs and various programs. Information. In addition, The front portion is provided with an operation unit 62 for inputting necessary instructions to the substrate processing apparatus, and a display unit 63 for displaying various materials. The control system 6 is attached to the body by a cable not shown. Each of the two mechanisms is connected, and the stage 3, the bridge structure 4, the elevating mechanism 43, 44, the linear motor 50, 51, and the control unit are controlled according to the signals of the operation unit 62 and various sensors.

O:\90\90600.DOC -23- 1253359 給機構70及送液機構80等各構造。 特別是控制系統6藉由依據操作人員輪入之指示來進行 開閉閥75, 76, 83, 84之開閉控制,而將光阻液導入細縫噴 嘴41時,選擇使用吸引配管74及排出配管79,或是使用預 備配管85。並藉由控制信號來控制驅動馬達821之旋轉方 向、每i個行程之旋轉量及旋轉速度。由於基板處理裝置i 係藉由驅動馬達821之每丨個行程之旋轉量來決定光阻泵“ 之接合構件813之移動量(光阻泵81之容積變化量),因此控 制該旋轉量即相當於控制光阻泵81輸送之光阻液之送液 量。此外,由於基板處理裝置丨係藉由驅動馬達821之旋轉 速度來決定接合構件813之移動速度(光阻泵81之容積變化 速度),因此控制該旋轉速度即相當於控制光阻泵之光阻液 流量。 控制系統6之具體構造,其記憶部61相當於暫時性記憶之 RAM、讀取專用之R〇M及磁碟裝置等,可搬動性之光磁碟 及記憶卡等記憶媒體,及此等之讀取裝置等。此外,操作 部62係操作人員用於輸入對基板處理裝^之指示之按鈕 及開關類(包含鍵盤及滑鼠等)等,不過亦可為觸摸面板顯示 裳置等兼顯示部63功能者。顯示部63相當於液晶顯示裝置 及各種燈等。 < 1·2動作之說明> 其次,說明基板處理裝置丨之動作。基板處理裝置丨主要 存在二種動作模式(塗敷模式、預塗敷模式、保養模式),選 擇任何一種動作模式係按照操作人員輸入之指示,並藉由O:\90\90600.DOC -23- 1253359 Each structure of the mechanism 70 and the liquid supply mechanism 80 is given. In particular, the control system 6 controls the opening and closing of the opening and closing valves 75, 76, 83, 84 in accordance with the instruction of the operator to turn in, and when the photoresist liquid is introduced into the slit nozzle 41, the suction pipe 74 and the discharge pipe 79 are selectively used. Or use the preliminary piping 85. The rotation direction of the drive motor 821, the amount of rotation per i stroke, and the rotation speed are controlled by a control signal. Since the substrate processing apparatus i determines the amount of movement of the bonding member 813 (the amount of change in the volume of the resistive pump 81) by the amount of rotation of each stroke of the driving motor 821, the amount of rotation is controlled to be equivalent. In addition, the substrate processing apparatus determines the moving speed of the joint member 813 by the rotational speed of the drive motor 821 (the volume change speed of the resist pump 81). Therefore, controlling the rotation speed corresponds to controlling the flow rate of the photoresist liquid of the photoresist pump. The specific structure of the control system 6 is such that the memory unit 61 is equivalent to a temporary memory RAM, a read-only R〇M, a disk device, and the like. a removable medium such as a magneto-optical disk or a memory card, a reading device, etc. Further, the operation unit 62 is a button and a switch for the operator to input an instruction for the substrate processing device (including The keyboard, the mouse, etc., etc., may be displayed on the touch panel, such as the display unit 63. The display unit 63 corresponds to a liquid crystal display device, various lights, etc. <1·2 Operation Description> Description Shu means of plate processing operation. Shu substrate processing apparatus mainly two kinds of operation modes (coating mode, pre-coating mode, maintenance mode), the operation mode is selected based according to any one of the instruction input of the operator, and by

O:\90\90600.DOC -24- 1253359 控制系統6控制各個構造來進行 < U2A塗敷模式之動作〉 首先說明一般之塗敷模式 指示而選擇塗敷模切, 作。“操作人員輸入3 閥86及抽氣閥88形成^'統6將開閉闕83, 84、廢择 狀態。藉此,選擇吸弓I配、亚且將開閉間75形成, 流路。 …74及排出酉咖乍為光阻液, 此時,預先在緩衝槽72 藉由補充裝置Π貯存光阻液至器73之檢測結果, 81進行光崎之μ動作 立。而後’除光阻男 緩衝槽72内供給光阻液至上:位置错由控制系統6之控 基板處理裝置1藉由锅 構,搬、$其4 木 貝或圖上未顯示之搬運;f| π佯持面:〇上至特定位置時,载台3吸著、保持基板9( =寺面3。上,位置。繼續,升降機構43,44依據控制 之控制^就,使安裝於喷嘴支撐部40之間隙感測器4: ^動至比基㈣之厚度部分高之特定高度(以下稱「測 度」)。 間隙感測器42設定成測定高度時,藉由線性馬達50, 51 使橋接構xe4在(+χ)方向上移動,而使間隙感測器心移動 至光阻塗敷區域之上方。此時,控制系統6依據線性編碼器 ,3之核測…果,供給控制信號至各個線性馬達5〇, $工, 來控制間隙感測器42之X轴方向之位置。 、其-人,間隙感測器42開始測定基板9〇表面之光阻塗敷區 域内之基板90表面與細縫喷嘴41之間隙。開始測定時,藉O:\90\90600.DOC -24- 1253359 The control system 6 controls each structure to perform the operation of the U2A coating mode. First, the general coating mode is used to indicate the coating die cutting. "Operator input 3 valve 86 and exhaust valve 88 form a system 6 which will open and close 阙83, 84, and cancel the state. Thereby, the suction bow I is selected, and the opening and closing chamber 75 is formed, and the flow path is formed. And discharging the curry liquid into a photoresist liquid. At this time, the detection result of the photoresist liquid to the storage unit 73 is previously stored in the buffer tank 72 by the replenishing device, 81, and the photo-resistance is performed. 72: Supply of photoresist to the top: position error by the control system 6 of the control substrate processing device 1 by the pot structure, moving, its 4 mussels or not shown on the map; f| π holding surface: 〇 up to At a specific position, the stage 3 sucks and holds the substrate 9 (=the temple surface 3. the upper position. Continuing, the lifting mechanism 43, 44 controls the gap sensor 4 attached to the nozzle support portion 40 according to the control of the control. : ^ Move to a specific height higher than the thickness of the base (4) (hereinafter referred to as "measure"). When the gap sensor 42 is set to measure the height, the bridge structure xe4 is in the (+χ) direction by the linear motors 50, 51. Moving up, moving the gap sensor core above the photoresist coating area. At this time, the control system 6 is based on a linear encoder 3, the test results, the control signal is supplied to each linear motor 5, to control the position of the gap sensor 42 in the X-axis direction. The person-to-person, the gap sensor 42 starts to measure the surface of the substrate 9 The gap between the surface of the substrate 90 in the photoresist application region and the slit nozzle 41. When starting the measurement, borrow

O:\90\90600.DOC -25 - 1253359 由線性馬達5 Ο,5 1進一步使橋接構造4在(+ χ)方向上移 動,間隙感測器42掃描光阻塗敷區域,並將掃描中之測定 、、、口果傳达至控制系統6。★匕時,控制系、统6將間隙感測器42 之測定結果與藉由線性編碼器5 2, 5 3檢測之水平位置相關 連而儲存於記憶部6 1内。 橋接構造4在(+X)方向上通過基板9〇上方,藉由間隙感 測器42掃描結束後,控制系統6使橋接構造4在其位置上停 止,依據間隙感測器42之檢測結果,算出細縫噴嘴41於¥2 平面之安勢成為適切姿勢(細縫喷嘴41與光阻塗敷區域之 間隔成為塗敷光阻液用之適切間隔之姿勢。以下稱「適切 文勢」)之喷嘴支撐部40之位置,並依據算出結果,供給控 制信號至各個升降機構43, 44。各個升降機構43,44依據其 控制k唬使噴嘴支撐部40在Z軸方向上移動,將細縫喷嘴4 i 調整成適切姿勢。 如此,為求實現光阻液之均一塗敷,須嚴格調整細縫噴 嘴41與基板90表面之距離。基板處理裝置丨係藉由控制系統 6依據間隙感測器42之檢測結果控制升降機構43, 44,來進 行該距離之調整。 再者,線性馬達5〇,51使橋接構造4在(一 χ)方向上移動, 使細縫喷嘴41移動至開始排出位置。此處所謂開始排出位 置,係指細縫喷嘴41大致沿著光阻塗敷區域之一邊的位置。 細缝噴嘴41移動至開始排出位置時,控制系統6將控制信 號供給至線性馬達50, 51。藉由線性馬達5〇, 51依據該控制 仏旒,使橋接構造4在(一X)方向上移動,細縫喷嘴4丨掃描O:\90\90600.DOC -25 - 1253359 The bridge structure 4 is further moved in the (+ χ) direction by the linear motor 5 Ο, 5 1 , and the gap sensor 42 scans the photoresist coating area and will scan The measurement, and the result are transmitted to the control system 6. When 匕, the control system 6 stores the measurement result of the gap sensor 42 in the memory unit 61 in association with the horizontal position detected by the linear encoders 5 2, 5 3 . The bridge structure 4 passes over the substrate 9〇 in the (+X) direction. After the scanning by the gap sensor 42 is finished, the control system 6 stops the bridge structure 4 at its position, according to the detection result of the gap sensor 42. The posture of the slit nozzle 41 on the ¥2 plane is calculated to be in a proper posture (the interval between the slit nozzle 41 and the photoresist application region is a suitable interval for applying the photoresist liquid. Hereinafter, it is referred to as "appropriate posture"). The position of the nozzle support portion 40 is supplied with a control signal to each of the lift mechanisms 43 and 44 in accordance with the calculation result. Each of the elevating mechanisms 43, 44 moves the nozzle support portion 40 in the Z-axis direction in accordance with the control k, and adjusts the slit nozzle 4 i to an appropriate posture. Thus, in order to achieve a uniform coating of the photoresist liquid, the distance between the slit nozzle 41 and the surface of the substrate 90 must be strictly adjusted. The substrate processing apparatus adjusts the distance by controlling the lifting mechanism 43 and 44 based on the detection result of the gap sensor 42 by the control system 6. Further, the linear motor 5A, 51 moves the bridge structure 4 in the (one) direction, and moves the slit nozzle 41 to the start discharge position. Here, the start of the discharge position means that the slit nozzle 41 is located substantially along one side of the photoresist coating region. When the slit nozzle 41 is moved to the start discharge position, the control system 6 supplies a control signal to the linear motors 50, 51. By means of the linear motor 5, 51, according to the control 仏旒, the bridge structure 4 is moved in the (X) direction, and the slit nozzle 4 is scanned.

O:\90\90600.DOC -26- 1253359 基板9〇之表面。 此時控制系統6亦對開閉閥76及驅動馬達821供給控制信 "U亦即,控制系統6在細缝喷嘴4 1進行掃描時,將開閉閥 76形成開放狀態,並且在正方向上旋轉驅動驅動馬達821, 使光阻泵81之接合構件813在(一Z)方向上移動。 藉由該動作,光阻泵81之第一波紋管伸長,並且第二波 紋官收縮,間接液Lq被加壓。間接液[卩被加壓時,管路 收、吸引於官路8 14内之光阻液及自排出口 8丨6輸送至細 缝喷嘴41。 、b 、、、田缝嘴嘴41對基板相對地移動,並在光阻塗敷區 或上排出光阻液。藉此,在基板9〇表面上形成光阻液之層。 另外,控制系統6控制驅動馬達821成使光阻泵81之第一波 紋官811及第二波紋管812邊界近旁(第一波紋管Η”之移動 速度成為與細縫噴嘴41之移動速度(掃描速度)同步之速 度。藉此,可適切控制自光阻栗81排出之光阻液量。此外, 本貫施形態之基板處理裝置丨,由於光阻泵81之接合構件 813係與螺母構件823同時平滑地移動,因此輸送之光阻液 内不產生因泵送等造成之脈動,而可抑制送液不均一。 ^此外,該構造配置緩衝槽72,並設m高度成細縫喷 紫41之排出口 41 a之南度高於緩衝槽72内之光阻液之液面 间度藉此可避免塗敷時光阻液自細縫喷嘴4丨流出。 此外,此時㈣馬達821之旋轉速度係藉由控制系統咕 ^所形成之光阻液層之厚度在整個光阻塗敷區域均達到 設定值。控制系統6進行此種控制用之驅動馬達821之旋轉O:\90\90600.DOC -26- 1253359 The surface of the substrate 9〇. At this time, the control system 6 also supplies a control signal to the opening and closing valve 76 and the drive motor 821. That is, when the slitting nozzle 41 scans, the control system 6 opens the opening and closing valve 76 and rotates in the positive direction. The motor 821 is driven to move the engaging member 813 of the resistive pump 81 in the (Z) direction. By this action, the first bellows of the resist pump 81 is elongated, and the second corrugation is contracted, and the indirect liquid Lq is pressurized. Indirect liquid [When the crucible is pressurized, the pipeline receives and attracts the photoresist liquid in the official road 8 14 and the self-discharge outlet 8丨6 to the slit nozzle 41. The b, , , and the nozzles 41 are relatively moved toward the substrate, and the photoresist is discharged on or in the photoresist coating region. Thereby, a layer of a photoresist liquid is formed on the surface of the substrate 9. In addition, the control system 6 controls the drive motor 821 so that the moving speed of the first bellows 811 and the second bellows 812 near the boundary of the photoresist pump 81 (the first bellows Η) becomes the moving speed of the slit nozzle 41 (scanning) Speed) Synchronization speed, whereby the amount of the photoresist liquid discharged from the light barrier 81 can be appropriately controlled. Further, in the substrate processing apparatus of the present embodiment, the joint member 813 of the photoresist pump 81 and the nut member 823 are used. At the same time, it moves smoothly, so that the pulsation caused by pumping or the like does not occur in the transported photoresist liquid, and the liquid supply unevenness can be suppressed. ^ In addition, the buffer groove 72 is arranged in the structure, and the m height is made into a slit spray purple 41 The south degree of the discharge port 41a is higher than the liquid level of the photoresist liquid in the buffer tank 72, thereby preventing the photoresist liquid from flowing out of the slit nozzle 4 at the time of coating. Further, at this time, (4) the rotation speed of the motor 821 The thickness of the photoresist layer formed by the control system 达到^ reaches a set value throughout the photoresist application region. The control system 6 performs the rotation of the drive motor 821 for such control.

O:\90\90600.DOC -27- 1253359 曰隙感測器42掃描光阻塗敷區域,測定與形成於基板 由^阻膜之間隙’並傳送至控制系統卜控制系統6藉 u在光阻塗敷前測定之間隙值(與基板叫面間之距 句’與光阻塗敷後測定之間隙值(與光阻膜表面間之距離) 之產,來算出形成於基板90上之光阻膜之厚度尺寸。 再者’藉由依《出之厚度尺寸’與作為容許之厚度尺 寸範圍而預先所設定之特定值比較,來判定對基板90進行 之塗敷處理良好與否,並將判定結果顯示於顯示⑽上。 /藉此’由於在基板90表面上形成處理液之層(光阻膜) 後,可迅速判定良好與否,因此,依據顯示於顯示部^上 之判定結果,如操作人g竺7 卞下人貝寺了迅速因應處理狀況。另外, 由於使用間隙感測器42之檢查’主要可進行χ軸方向之里常 檢測’因此’亦可檢測如未塗敷光阻液(光阻液不足),開始 排出位置及結束排出位置偏差,於結束塗敷位置上產生厚 膜化現象等異常。再者’適於依據該膜麼測定結果,如膜 厚比所需厚度薄時,可提高下次塗敷時_馬達821之速度 等’依據狀況來彈性控制光阻泵81,以獲得所需之塗敷結 果0 此時,控制系統6係藉由控制信號使驅動機構8 2之驅動馬 達821反轉,使螺母構件823在(+ζ)方向上移動。藉此,因 接口構件8 1 3係在(+ ζ)方向上移動,所以第—波紋管8 i i收 縮,並且第二波紋管812伸長。目此,間接液⑶被減壓, 管路814膨脹,光阻液自供給機構7〇經由吸引口 815而吸引 至管路814内。 O:\90\90600.DOC -29- 1253359 如此,光阻泵8丨於排出動作及吸引動作中,構成光阻液 流路之部分不致暴露於外部空氣中。亦即,不致如使用圖 11所示之先鈾之活基泵之裝置,暴露於外部空氣中之光= 液變質而混入塗敷之光阻液中。因此基板處理裝置丨可抑制 微粒子之產生。 光阻膜檢查結束後,載台3停止吸著基板9〇,操作人員或 搬運機構自保持面30上取出基板90,並搬運至下一個處理 步驟。 作以上係本實施形態之基板處理裝d之塗敷帛式時之動 < 1 · 2 · 2 預塗敷模式之動作> 其次,說明基板處理裝置j 式’係基板處理裝置1不藉由 輸送至細縫喷嘴41之模式。 之預塗敷模式。所謂預塗敷模 光阻栗81之驅動,而將光阻液 基板處理裝置!如於塗敷模式之前,形成因細縫噴嘴41 末端乾燥等而無法正常地排出光阻液之狀態,或是基於在 =縫喷嘴41之末端部預先廢棄、除去變質之光阻液等理 而進仃預塗敷(嘗試塗敷)。此外,於洗 理時亦進行預塗敷。 卩孔#處 藉由操作人員之指示而 、, 、·释預塗敷杈式吟,百先控制| 、洗6猎由控制信號而 開閉閥75, 76形成開放狀態,並且來 開閉閥83, 84、廢液關a 1 _ 86及抽氣處於閉鎖狀態。藉此 廷擇吸引配管74及排出阶 出配g 79作為自供給機構70至細縫1 烏41之光阻液流路。O:\90\90600.DOC -27- 1253359 The gap sensor 42 scans the photoresist coating area, and measures and forms a gap between the substrate and the resist film, and transmits it to the control system. The gap value (the distance between the substrate and the surface of the substrate) and the gap value measured after the photoresist coating (the distance from the surface of the photoresist film) are measured to determine the light formed on the substrate 90. The thickness of the resist film is further determined by comparing the thickness of the thickness to a specific value set in advance as the allowable thickness range, and determining whether the coating process on the substrate 90 is good or not, and determining The result is shown on the display (10). / By this, since the layer (the photoresist film) of the treatment liquid is formed on the surface of the substrate 90, it is possible to quickly determine whether it is good or not, and therefore, based on the determination result displayed on the display portion, The operator g竺7 has a rapid response to the situation of the people. In addition, since the inspection using the gap sensor 42 is mainly performed in the direction of the x-axis, it is also possible to detect the uncoated photoresist. Liquid (insufficient photoresist), start to discharge The discharge position deviation is set and the abnormality such as the thickening phenomenon occurs at the end of the coating position. Further, it is suitable for the measurement result according to the film, and if the film thickness is thinner than the required thickness, the next coating can be improved. The speed of the motor 821, etc. 'elastically controls the resist pump 81 depending on the condition to obtain the desired coating result. 0 At this time, the control system 6 reverses the drive motor 821 of the drive mechanism 8 by the control signal. The nut member 823 is moved in the (+ζ) direction. Thereby, since the interface member 8 1 3 is moved in the (+ ζ) direction, the first bellows 8 ii is contracted, and the second bellows 812 is elongated. The indirect liquid (3) is decompressed, the line 814 is expanded, and the photoresist liquid is sucked into the line 814 from the supply mechanism 7 through the suction port 815. O:\90\90600.DOC -29- 1253359 Thus, the photoresist pump 8丨 In the discharge action and the suction action, the portion constituting the photoresist flow path is not exposed to the outside air. That is, it is not exposed to the outside air as in the apparatus using the uranium-based active pump shown in FIG. Light = liquid metamorphism and mixed into the coated photoresist solution. After the photoresist film inspection, the stage 3 stops sucking the substrate 9 , and the operator or the transport mechanism takes out the substrate 90 from the holding surface 30 and transports it to the next processing step. The operation of the substrate processing apparatus d of the present embodiment is the operation of the coating type <1 · 2 · 2 pre-coating mode operation> Next, the substrate processing apparatus j-type substrate processing apparatus 1 is not conveyed to The mode of the slit nozzle 41. The pre-coating mode. The so-called pre-coated die light block 81 is driven, and the photoresist liquid substrate processing apparatus is formed, such as the end of the slit nozzle 41, before the coating mode. However, the state in which the photoresist is not normally discharged or the pre-coating (trying to apply) is performed based on the pre-disposal at the end portion of the slit nozzle 41 and the removal of the deteriorated photoresist. In addition, precoating is also carried out during washing. At the time of the boring, the valve is opened and closed by the operator's instruction, and the pre-coating 杈 type, the first control, the washing, and the opening and closing of the valve 75, 76 is opened, and the valve 83 is opened and closed. 84. The waste liquid closes a 1 _ 86 and the pumping air is in a locked state. Thereby, the suction pipe 74 and the discharge stage fitting g 79 are used as the light-blocking liquid flow path from the supply mechanism 70 to the slit 1 U41.

O:\90\90600.DOC -30- 1253359 其次,藉由控制系統6控制線性馬達5〇, 51,使橋接構造* 自待機位置移動至進行預塗敷之位置(對圖上未顯示之預 塗敷板進行塗敷之位置)。 、再者’藉由控制系統6控制緩衝槽72,以大氣壓輸送光阻 液至細縫嘴嘴41。 基板處理裝置1之預塗敷處理中,不需要進行高精確度之 排出’因此不需要藉由控制光阻泵81來進行排出量、排出 流量之高精確度控制。因此m統6輸送光阻液之方 =、,,不藉由驅動光阻泵81,而係藉由選擇緩衝槽72以大氣 壓送液之方法,可不生成驅動力地輸送光阻液。 細縫塗敷機使用黏度高之光阻液時’及進行洗淨及廢棄 時同時擠排變質之光阻液及微粒子時等,需要以高壓力進 订达液。而本實施形態之基板處理裝置丨即使在此種處理中 仍可藉由預塗敷來因應。 精由操作人員輸入之指示而選擇高壓力之預塗敷時,首 =’控制系統6藉由控制信號將開閉閥83,料形成開放狀 =,並且將開閉閥75、廢液閥86及抽氣閥以形成閉鎖狀態。 藉此,遥擇預備配管85作為自供給機構7〇至細縫噴嘴Μ之 光阻液流路。 其次,控制系統6控制線性馬達5〇,51使橋接構造4移動。 ^ k敷於基板90時’與塗敷模式同樣地藉由間隙感測 时42進订測定等後,橋接構造4配置於前述之開始排出位 置此外,塗敷於預塗敷板上時,橋接構造4係配置於前述 之預塗敷位置。O:\90\90600.DOC -30- 1253359 Next, by controlling the linear motor 5〇, 51 by the control system 6, the bridge structure* is moved from the standby position to the position where the pre-coating is performed (pre-not shown on the figure) The position where the coating plate is applied). Further, the buffer tank 72 is controlled by the control system 6, and the photoresist is supplied to the slit nozzle 41 at atmospheric pressure. In the precoating process of the substrate processing apparatus 1, high-precision discharge is not required. Therefore, it is not necessary to control the photoresist pump 81 to perform high-precision control of the discharge amount and the discharge flow rate. Therefore, the square of the photoresist liquid is supplied, and the photoresist liquid is not driven by the selection of the buffer tank 72 by the method of driving the photoresist 81, and the photoresist can be transported without generating a driving force. When the slit coater uses a high-viscosity photo-resistance liquid, and when it is used to wash and discard the deteriorated photoresist and fine particles, it is necessary to press the liquid at a high pressure. On the other hand, the substrate processing apparatus of the present embodiment can be used by precoating even in such a process. When the high pressure pre-coating is selected by the operator's input instruction, the first = ' control system 6 will open and close the valve 83 by the control signal, and the material is formed into an open shape =, and the opening and closing valve 75, the waste liquid valve 86 and the pumping The gas valve is in a locked state. Thereby, the remote selection preliminary pipe 85 serves as a photoresist liquid flow path from the supply mechanism 7 to the slit nozzle. Next, the control system 6 controls the linear motors 5, 51 to move the bridge structure 4. When k is applied to the substrate 90, the bridge structure 4 is placed at the above-described start discharge position, and the bridge structure is applied to the precoat plate when the measurement is performed by the gap sensing 42 in the same manner as the coating mode. The 4 series is disposed at the aforementioned pre-coating position.

O:\90\90600.DOC -31- 1253359 橋接構造4配置於特定之位置時,藉由控制系統6控制線 性馬達50, 51使橋接構造4在特定方向上移動,同時藉由细 、㈣嘴41進行掃描。此時控制线6將開閉閥76形成開放狀 態,=且控制供給機構7〇之補充褒置71,將光阻液予以加 [藉此被加壓之光阻液自供給機構7〇向細縫噴嘴4 1送 液,並自細缝噴嘴41排出光阻液。 、 如此,11由基板處理裝置1具備預備配管85,控制系統6 具有^切選擇預備配管85之功能,即使如可能造成光阻栗 81之s路814破指私度之高壓力施加於光阻液時,基板處理 裝置1仍可輸送光阻液。因此 口此即使為咼黏度之光阻液,基 板處理裝置1仍可用作處理液。 執行4寸定里之排出4,線性馬達5〇,5工使橋接構造4退回 到待機位置,而結束職敷模式。以上係基板處理裝 之預塗敷模式之動作說明。 < 1,2,3保養模式之動作> 士其次’㈣基板處理裝置】之保養模式之動作。基板處理 裝f 1適切進行洗淨⑷丨配#74、排出配管π、預備 配官85及廢液配管87等)及光阻泵们,或是更換光阻之 保養。 基板處理裝置1藉由操作人員輸人之指示而選擇保養模 式時,係藉由控制系統6將廢液閥86形成開放狀態。 基板處理裝置!如圖3及圖4所示,沿著2軸方向配置有光 阻泵81之管路814。亦^係配置成光阻泵81…阻液之 达液方向成為沿著Z轴之方向,吸巧口川之高度位置配置O:\90\90600.DOC -31- 1253359 When the bridge structure 4 is placed at a specific position, the linear motor 50, 51 is controlled by the control system 6 to move the bridge structure 4 in a specific direction while being fine, (4) 41 to scan. At this time, the control line 6 opens the opening and closing valve 76, and controls the supply mechanism 7 to replenish the photoresist 71. The photoresist is pressurized from the supply mechanism 7 to the slit. The nozzle 41 is supplied with liquid, and the photoresist is discharged from the slit nozzle 41. As described above, the substrate processing apparatus 1 includes the preliminary piping 85, and the control system 6 has the function of selecting the preliminary piping 85, even if the pressure of the light barrier 81 is likely to be applied to the photoresist. In the case of liquid, the substrate processing apparatus 1 can still transport the photoresist. Therefore, even if it is a photoresist of 咼 viscosity, the substrate processing apparatus 1 can be used as a treatment liquid. Execute 4 inches of the discharge 4, linear motor 5 〇, 5 work to make the bridge structure 4 back to the standby position, and end the job mode. The above is a description of the operation of the pre-coating mode of the substrate processing apparatus. <1, 2, 3 Operation mode operation> The operation of the maintenance mode of the next (fourth substrate processing device). Substrate processing Install f 1 to clean (4) 丨 #74, discharge piping π, reserve 85 and waste piping 87, etc.) and the photoresist pump, or replace the photoresist. When the substrate processing apparatus 1 selects the maintenance mode by the operator's input instruction, the waste liquid valve 86 is opened by the control system 6. Substrate processing unit! As shown in Figs. 3 and 4, a pipe 814 of the resistive pump 81 is disposed along the two-axis direction. Also configured as a photoresist pump 81... the liquid-blocking direction becomes the direction along the Z-axis, and the height position of the mouth is

O:\90\90600.DOC -32- 1253359 於比排出口 816之高度位置低之位置上。 如此’本實施形態之基板處理裝置1藉由將配置於吸引口 815及排出口 816中之高度位置在低位置之吸引口 815側連 接於廢液配管87,藉由控制系統6將廢液閥86形成開放狀 恶’可輕易地抽出光阻泵8 1内之光阻液。 此外’在成為光阻液流路之管路8丨4内壁不形成複雜之凹 凸等,而僅將廢液閥86形成開放狀態,可將光阻泵8丨内之 光阻液導入廢液配管87並順利地抽出。因此可輕易進行洗 淨等保養。 此外,因藉由此種配置,光阻系81内之氣泡有效地排至 上邛’因此亦可輕易地進行氣泡除去作業。 此外基板處理裝置1於將廢液閥86形成開放狀態時,藉由 亦將開閉閥76形成開放狀態,亦可有效回收細縫噴嘴“内 之光阻液。另外,將廢液閥86形成開放狀態時,亦可藉由 控制系統6控制圖上未顯示之回收機構,而構成真空吸引廢 液配管87。此時可更輕易地抽出光阻液。 經過特定時間完成廢棄(廢液)、洗淨及除去處理時,基 板處理裝置1結束保養模式,並且在顯示部63上顯示保養作 業結束。藉此’操作人員可得知基板處理裝置i處於可開始 進行塗敷處理之狀態。 ° 如以上所述,第一種實施形態之基板處〜a 構80進行排出動作及吸引動作時,並非如圖u所示3 =塞泵110,其處理液之流路(卿筒ln之内壁)暴露於外 氣氛中,因此可防止產生微粒子。 O:\90\90600.doc -33 - 1253359 、此外,由於送液機構80係||由收縮管路814來輸送處理 液,因此可抑制處理液流動之脈動,而可高精確度地送液。 在基板處理裝置丨等之細縫塗敷機巾,由於對細縫喷嘴^ 輸运光阻液之精確度,對排出精確度影響極大,因此特別 有效。 此外,由於光阻泵81中並未使用如先前之活塞泵110之密 封材料113等磨損構件(如〇形環等),因此可抑制零件之更 換頻率。並可抑制因磨損而產生微粒子。 此外,由於光阻泵8 1之内部形狀係形成圓筒狀之簡易形 狀(管路814),因此可輕易廢棄光阻泵81内部之處理液。由 於可幸二易進行處理液之洗淨及除去,因此可輕易進行保養 作業彳寸別疋與一般之波紋管泵比較,由於處理液之替換 性佳’因此適於彩色光阻之塗敷。 此外,藉由在吸引口 815及排出口 816中,將一方之高度 位置配置較低,可輕易地自上部排出光阻泵8丨内之氣泡, 並且可自下部輕易地廢棄處理液。藉此保養作業亦容易。 此外,藉由控制系統6選擇驅動驅動機構82之驅動馬達 821來送液與藉由補充裝置71來送液,可依據基板處理裝置 1之使用狀況進行送液。 此外’基板處理裝置1藉由選擇經由光阻泵8丨及吸引配管 74輸送光阻液,或是經由預備配管85輸送光阻液,可依據 使用之處理液狀況來進行送液。 &lt; 2 _第二種實施形態&gt; 第一種實施形態之基板處理裝置1係構成藉由1個光阻泵 O:\90\90600.DOC -34- 1253359 81輸送光阻液至細縫喷嘴41。 ,十… 丁而晋處理之基板90大型 化’來增加塗敷處理時每1個 排出®時,先前係藉由 將先阻泵81更換成排出量大 ^ 』泵來因應。但是,此種 里泵不易精確製造,而存在塗敷精確度降低之問題。本 發明之第-種實施形態所示之基板處理裝l,其輸送光阻 液之泵並不限定於1個,亦可為數個。 圖6係顯示依據此種原理構成之第二種實施形態之基板 處理裝置1之送液機構’與細縫喷嘴41之連接關係圖。另 外’圖6中’預備配管85等與第—種實施形態大致相同之構 造省略圖式。 本實施形態之基板處理裝置丨與第一種實施形態之基板 處理裝置1不同之處在於送液機構SOa具備:兩個光阻泵8u, 81b,及兩個驅動機構82a,82b。 圖7係顯示光阻泵81a,8 lb及驅動機構82a,82b之圖。由於 光阻泵8 1 a及光阻泵8 1 b具有與第一種實施形態之光阻泵8 i 大致相同之構造。此外,驅動機構82a及驅動機構82b具有 與第一種實施形態之驅動機構82大致相同之構造,因此適 切註記相同符號並省略說明。 各驅動馬達821係DD馬達,各個獨立地連接於控制系統 6。第二種實施形態之基板處理裝置1,其驅動機構82a之安 裝構件824固定於光阻泵81a之接合構件813,而驅動機構 82b之安裝構件824固定於光阻泵81b之接合構件813。亦 即,具有驅動機構82a生成光阻泵81a之驅動力,驅動機構 82b生成光阻泵81b之驅動力之功能。 O:\90\90600.DOC -35 - 1253359 如此,由於兩個光阻泵81a,81b係藉由分別獨立之驅動機 構82a,82b驅動,因此控制系統6可分別獨立地控制光阻果 81a與光阻泵81b,可配合狀況彈性地控制光阻液之送液。 另外詳細内容於後述。 广卜:如圖6所示,送液機構8〇a之排出配管79係分歧成 第配官79a與第二配管79b ’來作為於細縫噴嘴41内導入 光阻液用之送液配管。 第-配管79a連通連接於光阻栗8U之排出口川,並具有 導入自光阻泵81a排出之光阻液之功能。此外,第二配管携 係連通連接於光阻泵81b之排出口 816,並入 排出之光阻液之配管。第一一第二配二= 液之流路長度及粗細大致相同。第一配管%與第二配管 携在連結部CP中連通連接,分別導人之光阻液於連^ CP中合流後’藉由排出配管79引導。排出配管79連通連接 於設於細缝噴嘴41之丫軸方向(長度方向)中央部之供給口 410 〇 〇 其次’說明第二種實施形態之基板處理裝置1之動作。本 實施形態之基板處理裝置i,在基板90表面形成光阻膜之動 作係藉由與第-種實施形態之基板處理裝置丨大致相同之 動作來進行,因此適切省略來說明。 首先’藉由將基板90搬運至基板處理裂置】來開始進行處 理,線性馬達50, 51使橋接構造4在(+χ)方向上移動,並2 藉由間隙感測H 42進行間隙測定,升降機構从料依據= 感測為4 2之輸出來調整細縫喷嘴4 1之姿勢。 ’O:\90\90600.DOC -32- 1253359 is at a lower position than the height of the discharge port 816. In the substrate processing apparatus 1 of the present embodiment, the waste liquid pipe 87 is connected to the waste liquid pipe 87 at the lower position of the suction port 815 disposed at the suction port 815 and the discharge port 816, and the waste liquid valve is controlled by the control system 6. 86 forms an open-like odor 'can easily extract the photoresist liquid in the photoresist pump 8 1 . Further, 'the inside of the pipe 8丨4 which becomes the photoresist flow path does not form complicated irregularities, and only the waste liquid valve 86 is opened, and the photoresist liquid in the photoresist pump 8 can be introduced into the waste liquid pipe. 87 and smoothly extracted. Therefore, maintenance such as washing can be easily performed. Further, with such an arrangement, the bubbles in the photoresist system 81 are efficiently discharged to the upper crucible', so that the bubble removing operation can be easily performed. Further, when the waste liquid valve 86 is opened, the substrate processing apparatus 1 can also open the open/close valve 76 in an open state, and can effectively recover the photoresist liquid in the slit nozzle. Further, the waste liquid valve 86 is opened. In the state, the control system 6 can also control the recovery mechanism not shown in the figure to form the vacuum suction waste liquid pipe 87. At this time, the photoresist can be extracted more easily. After a certain period of time, waste (waste) and washing are completed. At the time of the cleaning and the removal process, the substrate processing apparatus 1 ends the maintenance mode, and the maintenance operation is completed on the display unit 63. Thus, the operator can know that the substrate processing apparatus i is in a state where the coating process can be started. When the substrate portion to the a structure 80 of the first embodiment performs the discharge operation and the suction operation, the valve flow path (the inner wall of the tube ln) is not exposed as shown in FIG. In the external atmosphere, it is possible to prevent the generation of fine particles. O:\90\90600.doc -33 - 1253359 Further, since the liquid supply mechanism 80 system|| delivers the treatment liquid by the contraction line 814, the flow of the treatment liquid can be suppressed. pulsation The liquid can be supplied with high precision. It is particularly effective in the application of the slit coating machine in the substrate processing apparatus, etc., because of the accuracy of transporting the photoresist to the slit nozzles, which greatly affects the discharge accuracy. Since the wear member (such as a 〇-shaped ring, etc.) such as the sealing material 113 of the prior piston pump 110 is not used in the resistive pump 81, the frequency of replacement of the parts can be suppressed, and the generation of fine particles due to abrasion can be suppressed. Since the internal shape of the resistive pump 8 1 is formed into a cylindrical simple shape (line 814), the treatment liquid inside the photoresist pump 81 can be easily discarded. Since it is fortunate that the treatment liquid is easily washed and removed, It is easy to carry out maintenance work. Compared with the general bellows pump, it is suitable for the application of color resist because of the excellent replacement of the treatment liquid. In addition, by the suction port 815 and the discharge port 816, The height position of one side is low, and the air bubbles inside the photoresist pump 8 can be easily discharged from the upper portion, and the treatment liquid can be easily discarded from the lower portion. This maintenance work is also easy. In addition, by the control system 6 The drive motor 821 of the drive drive mechanism 82 is selected to supply liquid and the liquid is supplied by the replenishing device 71, and the liquid supply can be performed according to the use condition of the substrate processing apparatus 1. Further, the 'substrate processing apparatus 1 is selected via the photoresist pump 8 by selection. The crucible and the suction pipe 74 convey the photoresist liquid, or the photoresist liquid is supplied through the preliminary pipe 85, and the liquid can be supplied depending on the state of the treatment liquid to be used. <2> The second embodiment> The first embodiment The substrate processing apparatus 1 is configured to transport a photoresist liquid to a slit nozzle 41 by a photoresist pump O:\90\90600.DOC -34-1253359 81. Ten... When the per-discharge® is applied during the coating process, the previous process is replaced by replacing the pre-resistance pump 81 with a large discharge amount. However, such a pump is not easy to manufacture accurately, and there is a problem that the coating accuracy is lowered. In the substrate processing apparatus 1 according to the first embodiment of the present invention, the pump for transporting the photoresist is not limited to one, and may be several. Fig. 6 is a view showing the connection relationship between the liquid supply mechanism ' of the substrate processing apparatus 1 of the second embodiment constructed in accordance with this principle and the slit nozzle 41. In addition, the configuration of the preparatory pipe 85 and the like in Fig. 6 is substantially the same as that of the first embodiment, and the drawings are omitted. The substrate processing apparatus according to the present embodiment is different from the substrate processing apparatus 1 of the first embodiment in that the liquid supply mechanism SOa includes two resist pumps 8u and 81b and two drive mechanisms 82a and 82b. Fig. 7 is a view showing the resist pumps 81a, 8 lb and the drive mechanisms 82a, 82b. The photoresist pump 8 1 a and the photoresist pump 8 1 b have substantially the same configuration as the photoresist pump 8 i of the first embodiment. In addition, since the drive mechanism 82a and the drive mechanism 82b have substantially the same structure as the drive mechanism 82 of the first embodiment, the same reference numerals will be given to the same reference numerals and will not be described. Each of the drive motors 821 is a DD motor, and each is independently connected to the control system 6. In the substrate processing apparatus 1 of the second embodiment, the mounting member 824 of the drive mechanism 82a is fixed to the joint member 813 of the resist pump 81a, and the mounting member 824 of the drive mechanism 82b is fixed to the joint member 813 of the resist pump 81b. That is, the drive mechanism 82a generates the driving force of the resistive pump 81a, and the drive mechanism 82b generates the driving force of the resist pump 81b. O:\90\90600.DOC -35 - 1253359 Thus, since the two resist pumps 81a, 81b are driven by separate drive mechanisms 82a, 82b, the control system 6 can independently control the photoresist 81a and The photoresist pump 81b can elastically control the liquid supply of the photoresist liquid in accordance with the condition. The details will be described later. As shown in Fig. 6, the discharge pipe 79 of the liquid supply mechanism 8A is branched into the first valve 79a and the second pipe 79b' as the liquid supply pipe for introducing the photoresist in the slit nozzle 41. The first pipe 79a is connected to the discharge port of the light barrier 8U, and has a function of introducing a photoresist liquid discharged from the photoresist pump 81a. Further, the second pipe is connected to the discharge port 816 of the photoresist pump 81b, and is incorporated into the discharge of the photoresist. The length and thickness of the flow path of the first one and the second two are substantially the same. The first pipe % and the second pipe are connected to each other in the joint portion CP, and the respective light-blocking liquids are merged in the joint CP to be guided by the discharge pipe 79. The discharge pipe 79 is connected to the supply port 410 provided in the center portion of the slit nozzle 41 in the axial direction (longitudinal direction). Next, the operation of the substrate processing apparatus 1 of the second embodiment will be described. In the substrate processing apparatus i of the present embodiment, the operation of forming the photoresist film on the surface of the substrate 90 is performed by substantially the same operation as the substrate processing apparatus 第 of the first embodiment, and therefore, the description thereof will be omitted. First, processing is started by "transporting the substrate 90 to the substrate processing", the linear motors 50, 51 move the bridge structure 4 in the (+χ) direction, and 2 the gap is measured by the gap sensing H42. The lifting mechanism adjusts the posture of the slit nozzle 41 from the output according to the sense = 4 . ’

O:\90\90600.DOC -36- 1253359 其次,藉由線性馬達50, 51使橋接構造4在(一χ)方向上移 動,將細縫喷嘴41移動至開始排出位置,開始進行細縫喷 嘴41之掃描。 'O:\90\90600.DOC -36- 1253359 Next, the bridge structure 4 is moved in the (one turn) direction by the linear motors 50, 51, the slit nozzle 41 is moved to the start discharge position, and the slit nozzle is started. 41 scan. '

Ik该細縫喷嘴41開始掃描,第二種實施形態之基板處理 衣置1中,亦自細縫噴嘴4丨排出光阻液。具體而言,控制系 統6對開閉閥76及兩個驅動馬達821供給控制信號,藉由細 縫噴嘴41進行掃描時,將開閉閥%形成開放狀態,並且在 正方向上旋轉驅動各個驅動馬達821,使光阻泵8ia,8 lb之 接合構件813在(一Z)方向上移動。 藉由該動作,光阻泵81a,81b之第一波紋管811伸長,並 且第二波紋管812收縮,因此吸引至管路814内之光阻液自 各個^ 口 816排出。亦即,光阻液自光阻系⑴之排出口 816排出至第一配管79a,並且光阻液自光阻泵8ib之排出口 816排出至第二配管7913。 …如此排出之光阻液在連結部Cp彼此合流,並藉由排出配 官79導入供給a41Q’而供給至細缝喷嘴41。亦即,基板處 理裝置1之細縫噴嘴41之排出量為光阻泵8U之排出量與光 阻泵81b之排出量之合計量。藉此,對大型之基板9_出光 阻液時,即使細縫噴嘴41須排出較多之光阻液,益須將逆 液機構80a之泵予以大型化 ‘ '、、 X人土化,仍可確保必要之排出量。因 此,基板處理裝L藉由使用高精確度之小型果(光阻果81a, 81b),不降低排出精確度而可因應基㈣之大型化。 此時,控制系統6控制光阻泵…之排出流量與光阻泵m 之排出流量成自細縫噴嘴4】3 t山 哭貝為41排出之光阻液之流量為形成所Ik the slit nozzle 41 to start scanning, and in the substrate processing garment 1 of the second embodiment, the photoresist liquid is also discharged from the slit nozzle 4丨. Specifically, the control system 6 supplies a control signal to the on-off valve 76 and the two drive motors 821, and when the slit nozzle 41 scans, the opening and closing valve % is opened, and the respective drive motors 821 are rotationally driven in the positive direction. The joint member 813 of the photoresist pump 8ia, 8 lb is moved in the (Z) direction. By this action, the first bellows 811 of the resist pumps 81a, 81b are elongated, and the second bellows 812 is contracted, so that the photoresist liquid sucked into the line 814 is discharged from the respective ports 816. That is, the photoresist liquid is discharged from the discharge port 816 of the photoresist system (1) to the first pipe 79a, and the photoresist liquid is discharged from the discharge port 816 of the photoresist pump 8ib to the second pipe 7913. The photoresist liquid thus discharged is joined to each other at the joint portion Cp, and is supplied to the slit nozzle 41 by the discharge register 79 to introduce the supply a41Q'. That is, the discharge amount of the slit nozzle 41 of the substrate processing apparatus 1 is the total amount of the discharge amount of the resist pump 8U and the discharge amount of the resistive pump 81b. Therefore, when the large-sized substrate 9_ is exposed to the light-blocking liquid, even if the slit nozzle 41 has to discharge a large amount of the photoresist liquid, it is necessary to enlarge the pump of the liquid-repellent mechanism 80a, and the X-body is still soiled. It ensures the necessary discharge. Therefore, the substrate processing apparatus L can increase the size of the response base (4) by using a small-sized fruit (photoresist 81a, 81b) of high precision without lowering the discharge accuracy. At this time, the control system 6 controls the discharge flow rate of the photoresist pump... and the discharge flow rate of the photoresist pump m from the slit nozzle 4] 3 t mountain Cry for 41 discharge of the photoresist liquid to the formation

O:\90\90600.DOC -37- 1253359 需膜厚之薄膜必要之流量。本實施形態之基板處理裝置j 係控制光阻泵8 la及光阻泵8 lb之各個接合構件8 1 3之移動 速度成光阻泵8 1 a之排出流量與光阻泵8 1 b之排出流量大致 相等,且此等合計流量為所需之細縫喷嘴41之排出流量。 各接合構件8 13之移動速度係藉由控制驅動機構82a及驅 動機構82b之各個驅動馬達82 1之旋轉速度來實現。另外, 如圖7所示,光阻泵81a與光阻泵81b形成大致相同之構造。 此外,驅動機構82a與驅動機構82b亦形成彼此大致相同之 構造。再者,第一配管79a與第二配管79b中,光阻液之流 路長度及粗細大致相同。藉由第二種實施形態之基板處理 裝置1之送液機構80a具有此種構造(所謂相似構造),控制系 統6將兩個驅動馬達821控制成彼此同步時,可輕易控制成 光阻泵8 1 a之排出流量與光阻泵8 1 b之排出流量相等。 此外’將光阻泵81a之排出量與光阻泵81b之排出量之合 計流量成為形成所需膜厚之薄膜必要之流量用之驅動馬達 821之速度分布,係預先藉由實驗及預備塗敷處理等而求 出,並依據該結果進行如前述之同步控制。 另外,藉由控制系統6對各驅動馬達82 1進行之控制,並 不限定於前述之同步控制,亦可進行非同步控制。如因使 用於光阻泵81a,8lb及驅動機構82a,8孔之各構件之使用環 境及惡化狀態等之差異,或是此等構件之加工精確度之差 異,控制系統6如前述地同步控制各驅動馬達82丨時,有時 光阻泵81a之排出量與光阻泵81b之排出量反而產生偏差。 但疋,由於第二種實施形態之基板處理裝置丨具有兩個驅動O:\90\90600.DOC -37- 1253359 The flow rate required for the film thickness of the film. The substrate processing apparatus j of the present embodiment controls the moving speed of each of the bonding members 8 1 3 of the resist pump 8 la and the photoresist pump 8 lb to be the discharge flow rate of the photoresist pump 8 1 a and the discharge of the photoresist pump 8 1 b. The flow rates are approximately equal, and the total flow rate is the discharge flow rate of the desired slit nozzle 41. The moving speed of each of the engaging members 813 is realized by controlling the rotational speeds of the respective driving motors 82 1 of the driving mechanism 82a and the driving mechanism 82b. Further, as shown in FIG. 7, the photoresist pump 81a and the photoresist pump 81b have substantially the same structure. Further, the drive mechanism 82a and the drive mechanism 82b also have substantially the same configuration as each other. Further, in the first pipe 79a and the second pipe 79b, the flow path length and thickness of the photoresist liquid are substantially the same. The liquid supply mechanism 80a of the substrate processing apparatus 1 of the second embodiment has such a configuration (so-called similar configuration), and when the control system 6 controls the two drive motors 821 to be synchronized with each other, the photoresist pump 8 can be easily controlled. The discharge flow rate of 1 a is equal to the discharge flow rate of the photoresist pump 8 1 b. Further, the total flow rate of the discharge amount of the resistive pump 81a and the discharge amount of the resistive pump 81b is the speed distribution of the drive motor 821 for the flow rate necessary for forming a film having a desired film thickness, and is experimentally and preliminary coated in advance. The processing is performed, and the synchronization control as described above is performed in accordance with the result. Further, the control of the drive motor 82 1 by the control system 6 is not limited to the above-described synchronous control, and asynchronous control can be performed. The control system 6 is synchronously controlled as described above due to the difference in the use environment and the deterioration state of the members of the eight holes, or the difference in the processing accuracy of the members, which are used in the photoresist pumps 81a, 8b, and 8b and the drive mechanism 82a. When each of the drive motors 82 is turned on, the discharge amount of the resist pump 81a may be different from the discharge amount of the resist pump 81b. However, since the substrate processing apparatus of the second embodiment has two drivers

O:\90\90600.DOC •38- 1253359 機構❿,82b ’且構成可獨立控制光阻泵81a與光阻泵81b, 此種情況下,控制系統6亦可不進行同步控制,而進行消除 此等偏差之控制。 此外’亦可不同時驅動光阻栗8 i a與光阻栗8 1 b。如開始 自細縫喷嘴41排出時,亦可控制成首先僅驅動光阻泵“a, 於光阻泵81a完成排出時,光阻泵81b繼續排出。 亦即,於細縫噴嘴41掃描光阻塗敷區域時,只要可適切 才工制細縫喷嘴41之光阻液之排出流量,亦可進行任何控制。 如此,由於第二種實施形態之基板處理裝置丨係構成可獨 立控制各驅動馬達82丨,所以可依據狀況彈性地控制送液狀 匕、。因此可貫現細縫喷嘴4丨之高精確度之排出。 橋接構造4在(一X)方向上移動,細缝喷嘴41移動至結束 排出位置時,控制系統6將開閉閥76形成閉鎖狀態,並且使 各驅動馬達821之旋轉停止,而停止自細缝喷嘴4丨排出光阻 液。 以後,進行與第一種實施形態之基板處理裝置丨相同之動 作及控制,對基板90之處理結束時’基板9〇自基板處理裝 置1搬出至裝置外。 如此,第二種實施形態之基板處理裝置丨藉由具備至少兩 個以上之光阻泵8 1 a, 8 1 b,構成確保細缝噴嘴4丨排出之光阻 液之排出量。因此,可使用高精確度之小型泵,而與使用 大型泵時比較,可提高細缝噴嘴41之排出精確度。—般而 言,每一個行程之排出量為200cc以下,排出流量約為〇.2 至l〇CC/sec之小型泵時,可製造排出流量精度為約±5%,O:\90\90600.DOC • 38- 1253359 mechanism ❿, 82b 'and constitutes an independently controllable photoresist pump 81a and photoresist pump 81b. In this case, the control system 6 can also eliminate the synchronous control. Control of equal deviations. In addition, the light barrier 8 i a and the light barrier 8 1 b may be driven at different times. When the discharge from the slit nozzle 41 is started, it is also controlled to first drive only the resist pump "a. When the photoresist pump 81a completes the discharge, the resist pump 81b continues to be discharged. That is, the slit is scanned at the slit nozzle 41. When the application area is applied, any control can be performed as long as the discharge flow rate of the photoresist liquid of the slit nozzle 41 can be tailored. Thus, the substrate processing apparatus of the second embodiment can independently control the respective drive motors. 82丨, so the liquid feeding 匕 can be flexibly controlled according to the situation. Therefore, the high-precision discharge of the slit nozzle 4 can be achieved. The bridge structure 4 moves in the (X) direction, and the slit nozzle 41 moves to When the discharge position is completed, the control system 6 forms the closed state of the opening and closing valve 76, and stops the rotation of each of the drive motors 821, and stops the discharge of the photoresist from the slit nozzles 4. Thereafter, the substrate of the first embodiment is performed. In the same operation and control of the processing apparatus, when the processing of the substrate 90 is completed, the substrate 9 is carried out from the substrate processing apparatus 1 to the outside of the apparatus. Thus, the substrate processing apparatus of the second embodiment is provided with More than two photoresist pumps 8 1 a, 8 1 b are formed to ensure the discharge of the photoresist liquid that is discharged from the slit nozzles 4. Therefore, a small pump with high precision can be used, compared with when using a large pump. The discharge precision of the slit nozzle 41 can be improved. Generally, the discharge flow rate can be manufactured when the discharge amount per stroke is 200 cc or less and the discharge flow rate is about 〇2 to 1 〇CC/sec. About ±5%,

O:\90\90600.DOC -39- 1253359 在基板90上形成光阻膜時可獲得必要之排出精確度。 此外,稭由具備至少兩個以上之驅動機構82&amp;,821^,分別 獨立地驅動至少兩個以上之光阻泵…,川,可依據狀況狀 悲彈性地控制送液流量。 另外,第二種實施形態之基板處理裝置1雖具備兩個光阻 泵81a,81b,不過輸送光阻液至細缝喷嘴41之泵數並不限定 於此,亦可使用更多之泵。以下之實施形態中亦同。 &lt; 3 ·第三種實施形態&gt; 第二種實施形態之基板處理裝置丨為求驅動兩個光阻泵 81a,81b,係具備兩個驅動機構82a,8沘,且藉由各個驅動 機構82a,82b獨立驅動各個光阻泵81a,81b。因此,為求使 光阻泵81a與光阻泵8113之排出流量相等,控制系統6係同步 控制驅動機構82a,82b。但是,同步驅動兩個光阻泵8U,81b 之方法並不限疋於藉由控制系統6來控制,如亦可機械性地 進行控制。 圖8係顯示依據此種原理構成之第三種實施形態之基板 處理裝置1之送液機構80b與細縫噴嘴4 1之連接關係之概略 圖。另外,本實施形態之基板處理裝置1中具有與第一及第 一種實施形態相同功能之構造,適切註記相同符號並省略 說明。 第三種實施形態之驅動機構82c之螺母構件823a上固定 有兩個安裝構件824a,824b。安裝構件824a係具有與第二種 貫施形態之驅動機構8 2 a之安裝構件8 2 4相同功能之構件, 並固定於螺母構件823a之光阻泵81以則。另外,安裝構件 〇:\9〇\9〇6〇〇d〇C -40- 1253359 襲係固定於螺母構件823&amp;之光阻泵81b側,且安裝於光阻 泵81b之接合構件813。 其次,說明第三種實施形態之基板處理裝置丄之動作。本 實施形態之基板處理裝置i在基板9〇表面形成光阻膜之動 作’係藉由與第-種實施形態之基板處理裝置ι大致相同之 動作來進行,因此適切省略來說明。 首先,藉由基板90搬運至基板處理装置1±來開始處理, 線性馬達50,51使橋接構造4在(+幻方向上移動,同時藉由 Μ感測器42進行間隙敎,升降機構43, 44依據間隙^測 為42之輸出來調整細縫喷嘴41之姿勢。 其次,藉由線性馬達50, 5丨使橋接構造4在(—幻方向上移 動,將細縫喷嘴41移動至開始排出位置,開始進行細縫^ 嘴41之掃描。 ' /遺該細縫喷嘴41開始掃描,第三種實施形態之基板處理 裝置1中,亦自細縫噴嘴41排出光阻液。 首先,控制系統6將開閉閥76形成開放狀態,並且使驅動 機構82c之驅動馬達821正旋轉,使螺母構件823a在ζ)方 向上移動。藉此m81a之接合構件813與光阻泵川之 接合構件813作為一體而以相同速度在(—z)方向上移動。 由於光阻泵8U與光阻系81b係以大致相同構造之構件構 成’因此各個接合構件813以相等速度移自時,與第二種實 施形態之基板處理裝置丨同樣地,自各個光阻泵⑴,川排 出之光阻液量相等。 橋接構造4在(一 χ)方向上移動,細縫噴嘴Μ移動至結束O:\90\90600.DOC -39- 1253359 The necessary discharge accuracy can be obtained when a photoresist film is formed on the substrate 90. Further, the straw is independently driven by at least two or more driving mechanisms 82 &amp; 821, respectively, and the liquid flow rate can be flexibly controlled depending on the situation. Further, although the substrate processing apparatus 1 of the second embodiment includes two resist pumps 81a and 81b, the number of pumps for transporting the photoresist to the slit nozzle 41 is not limited thereto, and more pumps may be used. The same applies to the following embodiments. &lt; 3. Third Embodiment&gt; The substrate processing apparatus according to the second embodiment is configured to drive two resist pumps 81a and 81b, and is provided with two drive mechanisms 82a and 8b, and each drive mechanism is provided. 82a, 82b independently drive the respective photoresist pumps 81a, 81b. Therefore, in order to make the discharge flow rate of the resist pump 81a and the photoresist pump 8113 equal, the control system 6 synchronously controls the drive mechanisms 82a, 82b. However, the method of simultaneously driving the two photoresist pumps 8U, 81b is not limited to being controlled by the control system 6, as can be mechanically controlled. Fig. 8 is a schematic view showing the connection relationship between the liquid supply mechanism 80b and the slit nozzle 41 of the substrate processing apparatus 1 according to the third embodiment constructed in accordance with this principle. In the substrate processing apparatus 1 of the present embodiment, the same functions as those of the first embodiment and the first embodiment are denoted by the same reference numerals, and their description is omitted. Two mounting members 824a, 824b are fixed to the nut member 823a of the drive mechanism 82c of the third embodiment. The mounting member 824a is a member having the same function as the mounting member 842 of the second embodiment of the driving mechanism 8 2 a, and is fixed to the photoresist pump 81 of the nut member 823a. Further, the mounting member 〇: \9 〇 \9 〇 6 〇〇 d 〇 C - 40 - 1253359 is attached to the side of the resist member 81b of the nut member 823 &amp; and is attached to the joint member 813 of the resist pump 81b. Next, the operation of the substrate processing apparatus according to the third embodiment will be described. The operation of forming the photoresist film on the surface of the substrate 9 by the substrate processing apparatus i of the present embodiment is performed by substantially the same operation as the substrate processing apparatus 1 of the first embodiment, and therefore will not be described. First, the processing is started by the substrate 90 being transported to the substrate processing apparatus 1±, and the linear motors 50, 51 move the bridge structure 4 in the (+ magic direction) while the gap is detected by the Μ sensor 42, the lifting mechanism 43, 44 adjusts the posture of the slit nozzle 41 according to the output of the gap 42. Next, the bridge structure 4 is moved in the (--magic direction) by the linear motor 50, 5丨, and the slit nozzle 41 is moved to the start discharge position. The scanning of the slit 41 is started. The scanning of the slit nozzle 41 is started. In the substrate processing apparatus 1 of the third embodiment, the photoresist is also discharged from the slit nozzle 41. First, the control system 6 The opening and closing valve 76 is opened, and the drive motor 821 of the drive mechanism 82c is rotated to move the nut member 823a in the ζ) direction. Thereby, the joint member 813 of the m81a and the joint member 813 of the resist pump are integrated. Moving in the (-z) direction at the same speed. Since the photoresist pump 8U and the photoresist system 81b are configured by members having substantially the same configuration, when the respective joint members 813 are moved at equal speed, the second embodiment is Substrate Similarly, since the respective pump photoresist ⑴, equal to the amount of liquid discharge of the device resist Chuan Shu. 4 move in a bridge configuration (i [chi]) direction, to move the end of the slit nozzle Μ

O:\90\90600.DOC -41 - 1253359 排出位置時,控制系統6將開閉閥76形成閉鎖狀態,並且使 驅動馬達821之旋轉停止,而停止自細縫喷嘴41排出光阻 液。 以後,進行與第一種實施形態之基板處理裝置丨相同之動 作及控制,對基板90之處理結束時,基板9〇自基板處理裝 置1搬出至裝置外。 如此,在第三種實施形態之基板處理裝置丨中,亦可獲得 與第二種實施形態之基板處理裝置i大致相同之效果。 此外,第二種實施形態之基板處理裝置i,其驅動機構82c 藉由具有數個安裝構件824a, 824b之螺母構件823a,連結兩 個光阻㈣a, 81b來驅動,不進行控制系統6之複雜控制, 亦可驅動光阻泵81a,81b而使各個排出流量輕易地相等。 &lt; 4·第四種實施形態&gt; 上述貫施形態係說明自一處供給光阻液至細縫喷嘴Ο, 不過供給光阻液之位置並不限定於一個。 圖9係依據此種原理構成之第四種實施形態之基板處理 裝置1本體1正面圖。另外,本實施形態之基板處理裝l 中具有與第一及第二種實施形態相同功能之構造亦適切 註記相同符號並省略說明。 本貝%形恶之本體2上,與上述實施形態同樣地設有橋接 冓k此外橋接構造4係由升降機構43,44及噴嘴支撐部 40構成。 在喷觜支撐。40之Y軸方向兩侧分別分開配置送液機構 8〇c與送液機構80d。亦即各個送液機構8〇c,_係配置於細When the position is e:\90\90600.DOC -41 - 1253359, the control system 6 forms the lock-up state of the opening and closing valve 76, and stops the rotation of the drive motor 821, and stops the discharge of the photoresist from the slit nozzle 41. Thereafter, the same operation and control as in the substrate processing apparatus of the first embodiment are performed, and when the processing of the substrate 90 is completed, the substrate 9 is carried out from the substrate processing apparatus 1 to the outside of the apparatus. As described above, in the substrate processing apparatus according to the third embodiment, substantially the same effects as those of the substrate processing apparatus i of the second embodiment can be obtained. Further, in the substrate processing apparatus i of the second embodiment, the drive mechanism 82c is driven by the nut members 823a having the plurality of mounting members 824a, 824b to connect the two photoresists (4) a, 81b without the complexity of the control system 6. Control, it is also possible to drive the resist pumps 81a, 81b so that the respective discharge flows are easily equal. &lt;4. Fourth Embodiment&gt; The above-described embodiment is described in which the photoresist is supplied from one place to the slit nozzle Ο, but the position at which the photoresist is supplied is not limited to one. Fig. 9 is a front elevational view of the main body 1 of the substrate processing apparatus 1 according to the fourth embodiment constructed in accordance with this principle. In the substrate processing apparatus 1 of the present embodiment, the same functions as those of the first and second embodiments are denoted by the same reference numerals, and the description thereof is omitted. In the main body 2 of the present invention, a bridge is provided in the same manner as in the above embodiment. The bridge structure 4 is composed of the elevating mechanisms 43, 44 and the nozzle support portion 40. In the sneeze support. The liquid supply mechanism 8〇c and the liquid supply mechanism 80d are separately disposed on both sides of the Y-axis direction of 40. That is, each liquid feeding mechanism 8〇c, _ is arranged in fine

O:\90\90600.DOC - 42- 1253359 缝喷嘴41長度方向之兩端 而°卩上方。糟由形成此種配置,本 實施形態之基板處理裝置i可縮短自各光阻㈣a,m至細 縫贺嘴41之光阻液流路,而可提高細缝噴嘴w之反應性。 /10係顯示第四種實施㈣之基板處理m之細缝喷 嘴41與运液機構8Ge, 8Gd之連接關係、之概略圖。 細縫噴嘴41内供給綠液用之兩個供給口(供給口他 及供給口410b)設置成排列在Y軸方向上。亦即,供給口 410a 及供給n4U)b之配置位置在細缝喷糾長度方向之位置各 不相同。 送液機構80c與送液機構_具有大致相同之構造,送液 機構具有:光阻㈣a、驅動機構仏、排出配管79。及 1間76a达液機構8〇d具有:光阻泵81卜驅動機構、 排出配管79d及開閉閥761)。 本貝鈿形悲中,光阻泵81a之排出口 816連通連接於排出 配管79c,排出配管79e經由開閉閥%而安裝於細縫喷嘴η 之供給n41Ga。此外,光阻泵㈣之排出口 816連通連接於 排出配官79d,排出配管79d經由開閉閥鳩而安裝於細縫喷 嘴41之供給口侧。亦即,光阻㈣a及綠㈣b - f卜 地與供給口 41〇a及供給口 4i〇b連接。 控制系統6藉由彼此比較依據兩個間隙感測器42之輪出 所求出之薄膜之膜厚值,檢測所形成之薄膜在Y軸方向之偏 ^旦調整供給至供給口他及供給口機之光阻液之送液 、&gt;里來,肖除该偏差。供給至供給口 41〇a及供給口 41〇b之 光阻液之送液流量係藉由驅動各個光阻栗仏,川之各驅 O:\90\90600.doc •43- 1253359 動馬達821之旋轉速度來㈣,因此本實施形態之基板處理 裝置1之控制系統6對各個驅動馬達⑵係進行依據間隙咸 測器42輸出之反饋控制。 1 其次’說明第四種實施形態之基板處理裝置丄之動作 實施形態之基板處理裝置!在基板90表面形成光阻膜 作,係進行與第—種實施形態之基板處理裝置!大致相同之 動作’因此適切省略來說明。 首先,藉由基板90搬運至基板處理裝置“來開始處理, 線性馬達50,51使橋接構造4在(+}〇方向上移動,同時藉由 ,隙感心42進行間隙測定,升降機構43, 44依據間隙感測 器42之輸出來調整細縫喷嘴41之姿勢。 其次,藉由線性馬達aw使橋接構造4在(—χ)方向上移 動’將細縫喷嘴41移動至開始排出位置,開始進行細縫噴 嘴41之掃描。 壯隨該細縫噴嘴41開始掃描,第四種實施形態之基板處理 裝置1中,亦自細縫喷嘴41排出光阻液。 、,百先,控制系統6將開閉閥76a, 76b分別形成開放狀態, 並且使各驅動機構82a,82b之各驅動馬達821正旋轉,使各 個螺母構件823在(—Z)方向上移動。藉此,與第二種實施 形態同樣地自光阻泵8la, 81b排出光阻液。 、&gt;此時’第二及第三種實施形態之基板處理裝置},自兩個 2泵81a,81b所排出之光阻液在輸送至細縫喷嘴41之中 途合流,而自一個供給口 41〇供給至細縫喷嘴Μ。 如第一至第三種實施形態之基板處理裝置丨,自一處供給 O:\90\90600.doc -44- 1253359 光阻液至細缝喷嘴41之細缝塗敷機,隨基板9〇之大型化而 使細缝喷嘴41大型化時,在距供給口41()最近之位置與距供 給口 410最遠之位置之間,距供給口 41〇之距離差增加。因 此,此等位置上之光阻液供給量產生偏差,細縫喷嘴“之 排出*里在Υ轴方向上不均一。此外,細縫喷嘴41大型化 日守,因細縫喷嘴41之加工精確度降低,排出流量在γ軸方向 上不均一。 但是,第四種實施形態之基板處理裝置丨,自各光阻泵8ia, 叫排出之光阻液係通過各個冑立之流路(排出配管79c及 =出配管79d)而供給至細縫嘴嘴41之不同位置。因此,本 實施形態之基板處理裝置i,與第一至第三種實施形態之基 =理裝置1比較,可縮短距供給口最近之位置與距供給口 取m位置之距供給口之距離差,因而可抑制細縫喷嘴Ο在 長度方向上之排出流量偏差。藉此可提高細縫喷嘴“之排 出精確度。 橋接構造4在(一 X)方向上移動,細縫喷嘴41移動至結束 出位置4 ’控制系、统6將開閉闕76a,⑽形成閉鎖狀態, 二使口 動馬達82 1之旋轉停止,來停止自細縫喷嘴4工 排出光阻液。 ' /、人藉由與第一種貫施形態之基板處理裝置1相同之動 作’藉由間隙感測器42測定與形成於基板9〇表面之光阻膜 ^間隙。運算部60依據兩個間隙感測器42之輸出,求出各 個位置上之光阻膜厚度尺寸,並藉由彼此比較此等值,來 ‘測所I成之光阻膜膜厚在γ軸方向之偏差(膜厚差)。O:\90\90600.DOC - 42- 1253359 Both ends of the slit nozzle 41 in the longitudinal direction are above the 卩. By forming such an arrangement, the substrate processing apparatus i of the present embodiment can shorten the photoresist flow path from the respective photoresists (4) a, m to the slits, and can improve the reactivity of the slit nozzles w. The /10 series shows a connection diagram between the slit nozzle 41 of the substrate processing m of the fourth embodiment (4) and the liquid transport mechanism 8Ge, 8Gd, and a schematic view thereof. The two supply ports (supply port and supply port 410b) for supplying green liquid in the slit nozzle 41 are arranged in the Y-axis direction. That is, the positions at which the supply port 410a and the supply n4U)b are disposed are different in the longitudinal direction of the slit. The liquid supply mechanism 80c has substantially the same structure as the liquid supply mechanism_, and the liquid supply mechanism includes a photoresist (four) a, a drive mechanism 仏, and a discharge pipe 79. And a 76a liquid supply mechanism 8〇d has a photoresist pump 81 driving mechanism, a discharge pipe 79d, and an opening and closing valve 761). In the present case, the discharge port 816 of the resistive pump 81a is connected to the discharge pipe 79c, and the discharge pipe 79e is attached to the supply n41Ga of the slit nozzle η via the opening and closing valve %. Further, the discharge port 816 of the resistive pump (4) is connected to the discharge occupant 79d, and the discharge pipe 79d is attached to the supply port side of the slit nozzle 41 via the opening and closing valve 。. That is, the photoresist (4) a and the green (4) b - f are connected to the supply port 41A and the supply port 4i, b. The control system 6 detects the partial thickness adjustment of the formed film in the Y-axis direction to the supply port and the supply port machine by comparing the film thickness values of the films obtained by the rotation of the two gap sensors 42 with each other. The liquid supply of the photoresist is removed, and the deviation is removed. The liquid supply flow rate of the photoresist liquid supplied to the supply port 41〇a and the supply port 41〇b is driven by the respective light barriers, and each of the drives is O:\90\90600.doc •43- 1253359 motor 821 Since the rotation speed is (4), the control system 6 of the substrate processing apparatus 1 of the present embodiment performs feedback control based on the output of the gap detector 42 for each of the drive motors (2). 1 Next, the operation of the substrate processing apparatus according to the fourth embodiment will be described. The substrate processing apparatus of the embodiment! A photoresist film is formed on the surface of the substrate 90, and the substrate processing apparatus according to the first embodiment is performed! The actions "substantially the same" are therefore omitted as appropriate. First, the substrate 90 is transported to the substrate processing apparatus "to start processing, and the linear motors 50, 51 move the bridge structure 4 in the (+} 〇 direction, while the gap sensation 42 performs gap measurement, and the hoisting mechanism 43, 44 The posture of the slit nozzle 41 is adjusted in accordance with the output of the gap sensor 42. Next, the bridge structure 4 is moved in the (-χ) direction by the linear motor aw to move the slit nozzle 41 to the start discharge position, and the start is performed. Scanning of the slit nozzle 41. When the slit nozzle 41 starts scanning, the substrate processing apparatus 1 of the fourth embodiment also discharges the photoresist from the slit nozzle 41. The first control system 6 is opened and closed. The valves 76a and 76b are respectively opened, and the drive motors 821 of the respective drive mechanisms 82a and 82b are rotated in the forward direction to move the respective nut members 823 in the (-Z) direction. This is the same as the second embodiment. The resist liquid is discharged from the resist pumps 8la, 81b. &gt; At this time, the substrate processing apparatus of the second and third embodiments}, the photoresist liquid discharged from the two two pumps 81a, 81b is transported to fine The slit nozzles 41 merge in the middle, and It is supplied from a supply port 41〇 to the slit nozzle Μ. As in the substrate processing apparatus of the first to third embodiments, O:\90\90600.doc -44- 1253359 photoresist liquid is supplied from one place to the slit In the slit coater of the nozzle 41, when the slit nozzle 41 is enlarged in size as the substrate 9 is enlarged, the distance from the supply port 41 () is the closest to the supply port 410, and the distance is supplied. The distance difference between the ports 41〇 is increased. Therefore, the supply amount of the photoresist liquid at these positions is deviated, and the discharge nozzle of the slit nozzle is not uniform in the direction of the x-axis. Further, the slit nozzle 41 is large and large. Since the processing accuracy of the slit nozzle 41 is lowered, the discharge flow rate is not uniform in the γ-axis direction. However, in the substrate processing apparatus according to the fourth embodiment, the photoresist is discharged from each of the photoresist pumps 8ia. The vertical flow path (discharge pipe 79c and = discharge pipe 79d) is supplied to different positions of the slit nozzle 41. Therefore, the substrate processing apparatus i of the present embodiment has the basis of the first to third embodiments. Comparing the device 1, the position closest to the supply port and the distance from the supply port can be shortened The distance difference between the m position and the supply port can suppress the deviation of the discharge flow rate of the slit nozzle 长度 in the longitudinal direction, thereby improving the discharge accuracy of the slit nozzle. The bridge structure 4 moves in the (1-X) direction. The slit nozzle 41 is moved to the end position 4'. The control system 6 opens and closes the knob 76a, and (10) forms a locked state. Second, the rotation of the mouth motor 82 1 is stopped, and the discharge of the photoresist from the slit nozzle 4 is stopped. ' /, the same action as the substrate processing apparatus 1 of the first embodiment of the first embodiment is used to measure the gap between the photoresist film formed on the surface of the substrate 9 by the gap sensor 42. The operation unit 60 is based on two The output of the gap sensor 42 is used to determine the thickness of the photoresist film at each position, and by comparing the values with each other, the deviation of the film thickness of the photoresist film in the γ-axis direction is measured. Thickness difference).

O:\90\90600.DOC -45- 1253359 控制系統6對其次處理之基板9〇排出光阻液時,依據運算 4 60所求出之膜厚差,來控制各驅動馬達⑵。亦即,卜制 各驅動馬達821之旋轉速度’使形成之光阻膜之膜厚在;軸 方向上均一(所求出之膜厚差為「〇」)。 &quot;如此,基板處理裝可依據間隙錢器42之輸出及控制 對象之光阻膜之膜厚值,獨立地反饋控制各驅動馬達Μ b 藉此,即使細縫噴嘴41之加工精確度因大型化而降低時, 仍可控制光阻泵81a,81b之送液流量,來消除¥軸方向之排 出流量偏差,因此可提高細缝噴嘴41之排出精確度。 舆第一種實施形態之基板處理裝置丨同樣地,光阻膜檢查 結束後,載台3停止吸著基板9〇,操作人員或搬運機構自保 持面30取出基板9〇,並搬運至下一個處理步驟。 如以上所述,第四種實施形態之基板處理裝置丨,即使使 用隨基板90大型化,其長度方向(γ轴方向)之長度為丨瓜以上 之大型細縫噴嘴41時,藉由將送液機構8〇c,8〇d分別分開配 置於細縫喷嘴41之兩端部,並分別獨立自兩處供給光阻液 至細縫噴嘴41,可促使細縫噴嘴41長度方向之光阻液之供 、、’e里均一化。因此,可提鬲細縫噴嘴* 1之排出精確度。 此外,藉由反饋控制依據間隙感測器42之輸出來驅動各 光阻泵81a,81b之各驅動馬達821,可進行依據實測值之控 制,可進一步提高排出精確度。 另外’本實施形態之基板處理裝置1係說明自兩處供給光 阻液至細縫喷嘴41,不過亦可構成自更多之位置供給光阻 液0 O:\90\90600.DOC -46* 1253359 &lt;5·變形例&gt; 以上係說明本發明之實施形態,不過本發明並不限定於 上述實施形態,亦可實施各種變形。 如上述實施形態之基板處理裝置丨係自細縫喷嘴排出光 阻液之所謂細縫塗敷機,不過本發明並不限定於細縫塗敷 機。 此外,驅動機構82驅動之泵並不限定於光阻泵8丨形式之 栗,亦可用於驅動活塞泵之活塞。亦即,只要係藉由沿著 直線狀之軸驅動移動部來送液之泵,可為任何泵。 此外,光阻泵81,81a,81b亦可設於細縫噴嘴41之下方。 此時可更有效回收、廢棄光阻泵81及細縫喷嘴“内之光阻 液。 拳 —2外,如前所述,為求提高自細縫噴嘴41之排出精確度, 宜縮短自光阻泵81,81a,81b之各個排出σ8ΐ6至細縫喷嘴 ^供給Π41〇)之㈣。第—至第三種實施形態之基板處理 :置1係错由將送液機構8〇, 8〇a,8〇b設於噴嘴支撐部40上 t縮短該距離。但是,亦可藉由將送液機構80, 80a,_安 裝於噴嘴支撐部40之中央部附近來進—步縮短該距離。 此外,如第四種實施形態之基板處理裝^所示,細縫喷 具有數個供給口他,侧時,為求改進細縫嗔嘴41 =轴方向之排出不均一,係說明使用反饋控制,不 =功能並不限定於此種情況。亦即,即使如第一至第 二種=形態所示,細縫嘴嘴41僅具有單—之供給口 “Ο ^為求將自細缝噴嘴41排出之光阻液之流量控制在適切O:\90\90600.DOC -45- 1253359 When the control system 6 discharges the photoresist from the substrate 9 to be processed, the drive motor (2) is controlled according to the difference in film thickness obtained by the calculation 460. That is, the rotational speed of each of the drive motors 821 is such that the thickness of the formed photoresist film is uniform in the axial direction (the obtained film thickness difference is "〇"). &quot; Thus, the substrate processing apparatus can independently feedbackly control the respective driving motors Μ b according to the output of the gap unit 42 and the film thickness value of the photoresist film to be controlled, whereby even the processing precision of the slit nozzle 41 is large When the pressure is reduced, the liquid flow rate of the resist pumps 81a, 81b can be controlled to eliminate the deviation of the discharge flow rate in the direction of the x-axis, so that the discharge accuracy of the slit nozzle 41 can be improved. In the substrate processing apparatus according to the first embodiment, after the inspection of the photoresist film is completed, the stage 3 stops sucking the substrate 9A, and the operator or the transport mechanism takes out the substrate 9 from the holding surface 30 and transports it to the next one. Processing steps. As described above, in the substrate processing apparatus according to the fourth embodiment, even when the length of the substrate 90 is increased, the length of the substrate (the γ-axis direction) is a large slit nozzle 41 having a size of more than 30 The liquid mechanisms 8〇c, 8〇d are respectively disposed at the opposite ends of the slit nozzle 41, and the photoresist liquid is supplied from the two places to the slit nozzle 41, respectively, and the photoresist liquid of the slit nozzle 41 in the longitudinal direction can be promoted. The supply, and 'e uniformity. Therefore, the discharge accuracy of the slit nozzle * 1 can be improved. Further, the drive motors 821 of the respective photoresist pumps 81a, 81b are driven by the feedback control according to the output of the gap sensor 42, and the control according to the actual measurement value can be performed to further improve the discharge accuracy. Further, the substrate processing apparatus 1 of the present embodiment describes that the photoresist liquid is supplied from the two places to the slit nozzle 41, but it is also possible to supply the photoresist liquid from a plurality of positions. 0: \90\90600.DOC -46* 1253359 &lt;5. Modifications&gt; The embodiments of the present invention have been described above, but the present invention is not limited to the above embodiments, and various modifications can be made. The substrate processing apparatus according to the above embodiment is a so-called slit coater that discharges a photoresist from a slit nozzle, but the present invention is not limited to the slit coater. Further, the pump driven by the drive mechanism 82 is not limited to the pump in the form of a photoresist pump 8 but can also be used to drive the piston of the piston pump. That is, any pump can be used as long as it is a pump that supplies liquid by driving the moving portion along a linear shaft. Further, the photoresist pumps 81, 81a, 81b may be provided below the slit nozzles 41. At this time, it is possible to more effectively recover and discard the photoresist from the photoresist pump 81 and the slit nozzle. In addition, as described above, in order to improve the discharge accuracy of the slit nozzle 41, it is preferable to shorten the self-light. (4) of each of the resisting pumps 81, 81a, 81b is discharged to σ8ΐ6 to the slit nozzle ^4.) The substrate processing of the first to third embodiments: setting 1 is wrong by the liquid feeding mechanism 8〇, 8〇a 8〇b is provided on the nozzle support portion 40 to shorten the distance. However, the liquid supply mechanism 80, 80a,_ can be attached to the vicinity of the central portion of the nozzle support portion 40 to further shorten the distance. As shown in the substrate processing apparatus of the fourth embodiment, the slitting spray has a plurality of supply ports, and when the side is in the side, in order to improve the discharge unevenness of the slit nozzle 41 = axis direction, it is explained that feedback control is used. The function is not limited to this case, that is, even as shown in the first to second forms, the slit nozzle 41 has only a single supply port "Ο ^ is a self-squeezing nozzle 41 The flow rate of the discharged photoresist is controlled

O:\90\90600.DOC -47- 1253359 :,亦可依據自間隙感測器42之輪出求出之光阻膜之膜 f,來反饋控制各驅動馬達821。,亦即,亦可藉由反饋控制 來修正藉由預先實驗等所求出之驅動馬達821之速度分布。 發明之效果 ”專利範圍第之發明,藉由於容器構件内部配 置s路構件,在容器構件與管路構件之間之空間内封有間 接液,處理液之流路之一部分不致暴露於空氣中,而可抑 制微粒子之產生。並可輕易地進行洗淨等保養。 旦申β月專利乾圍第4項之發明,藉由控制手段具有:固定容 f供給手段,其係控制送液手段輸送之特定處理液之輸送 !、;及固定流量供給手段,其係控制送液手段輸送特定處 理液之流量,可高精確度排出處理液。 申明專利靶圍第5項之發明,#由配置成分別位於管路構 件兩側之吸引口 β 4 ^ 引及排出口中之任何-方之高度位置低於 有助於送液手段除去氣泡,且排液容易。 申請專利範圍第6項之發明,藉由緩衝槽使前述送液手段 :大氣壓下吸引前述特定之處理液,可減少送液手段吸引 處理液時之吸引力。 又及引 申請專利範圍第7項之發明, 於細縫噴嘴之排出口之高度, 缝喷嘴排出。 藉由緩衝槽之液面設定成低 可抑制不希望之處理液自細 申請專利範圍第8項之發明,藉由補充手段以特定之壓力 將貯存於緩衝槽内 m力 、疋之處理液輸送至細縫啥嘴,尤你 驅動手段驅動即可不使 J孝二易地輸送處理液。O:\90\90600.DOC -47- 1253359: The drive motor 821 can also be feedback-controlled according to the film f of the photoresist film obtained from the wheel sensor 42. That is, the velocity distribution of the drive motor 821 obtained by a preliminary experiment or the like can also be corrected by feedback control. According to the invention of the patent scope, the indirect liquid is sealed in the space between the container member and the pipe member by the s-way member disposed inside the container member, and a part of the flow path of the treatment liquid is not exposed to the air. The invention can suppress the generation of the microparticles, and can be easily cleaned and the like. The invention of the fourth item of the patent of the patent of the fourth month of the patent is provided by the control means: a fixed capacity f supply means, which controls the delivery of the liquid supply means The delivery of the specific treatment liquid, and the fixed flow supply means control the flow rate of the specific treatment liquid by the liquid supply means, and the treatment liquid can be discharged with high precision. The invention of the patent target 5th item is defined as The height position of any one of the suction port β 4 ^ on the both sides of the pipe member and the discharge port is lower than that which facilitates the liquid supply means to remove the air bubbles, and the liquid discharge is easy. The invention of claim 6 is by the invention. The buffer tank allows the liquid feeding means to attract the specific processing liquid at atmospheric pressure, thereby reducing the attraction force when the liquid feeding means attracts the processing liquid. , at the height of the discharge port of the slit nozzle, the slit nozzle is discharged. By setting the liquid level of the buffer tank to be low, the undesired treatment liquid can be suppressed from the invention of the eighth application patent scope, and the specific means is supplemented by the supplementary means. The pressure will be stored in the buffer tank, and the treatment liquid of the force and the sputum will be transported to the slit nozzle. Especially if you drive the drive, the treatment liquid can be transported without J.

O:\90\90600.DOC -48 - 1253359 申請專利範圍第9項之發明’籍由進一步具有測定手段, 其係測定貯存於緩衝槽内之特定之處理液量,可適切維持 緩衝槽内之處理液量。 申請專利範圍第10項之發明,藉由進-步具備預備流 =其係不經由送液手段,而將特定之處理液導入細縫喷 嘴’:使用黏度高之處理液時,即使施加較高之壓力,不 致破壞送液手段而可輸送處理液。 申料利範圍第叫之發明,藉由進—步具備:送液選 + 八係在將知'疋之處理液輸送至細縫噴嘴時,選擇 f由驅動驅動手段來送液,與藉由補充手段來送液之任何 a H延擇手段,其係選擇經由送液手段輸送,或 疋經由預備流路輸it,可依狀況進行送液。 中請㈣_第12項之發明’藉由流路選擇手段具有開 才預備流路之閥,可輕易地選擇流路。 ―申請專利範圍第13項之發明,藉由於細縫喷嘴内輸送特 2之處理液之送液機構具有至少兩個送液泵,可使用送液 ^萑度间之达液泵,因此可提高細縫噴嘴之排出精確度。 申請專利範圍第14項之發明,藉由送液配管一對一地連 接至少兩個處理液供认 …、口人至 &gt;、兩個送液泵,與對細縫噴 ’自一處供給處理液時卜 _ 、 了匕車乂,可促使細縫喷嘴之排出均 性均一化。 、 申請專利範圍第15項之發明,藉由依據膜厚檢測手段之 檢測結果,控制驅動機構 再便潯艇之厚度均一,可依據實測 值來控制,因此可形成所需之薄膜。O:\90\90600.DOC -48 - 1253359 The invention of claim 9 is further characterized by further measuring means for measuring the amount of the specific treatment liquid stored in the buffer tank, and maintaining the buffer tank appropriately The amount of liquid processed. According to the invention of claim 10, the preparatory flow is provided by the step-by-step method, and the specific treatment liquid is introduced into the slit nozzle by the liquid supply means: when the treatment liquid having a high viscosity is used, even if the application is high The pressure can be used to transport the treatment liquid without damaging the liquid supply means. The invention of claiming the scope of the application is provided by the step-by-step method: the liquid supply selection + the eight system is used to convey the treatment liquid of the known '疋 to the slit nozzle, and f is selected by the drive driving means to supply liquid, and Any means of augmenting the means for feeding liquid, which is selected to be transported by means of a liquid supply means, or which may be fed via a preparatory flow path, and may be delivered according to conditions. In the case of (4) _12th invention, the flow path selection means has a valve for opening the preparatory flow path, and the flow path can be easily selected. In the invention of claim 13, the liquid supply mechanism for conveying the treatment liquid in the slit nozzle has at least two liquid supply pumps, and the liquid pump can be used between the liquid supply and the liquid, thereby improving Excretion accuracy of the slit nozzle. According to the invention of claim 14, the liquid supply pipe is connected to the at least two treatment liquids one by one, the mouthpiece to the &gt;, the two liquid supply pumps, and the pair of slitting sprays are supplied from one place. When the liquid is _, and the brakes are smashed, the discharge uniformity of the slit nozzles can be promoted to be uniform. According to the invention of claim 15 of the patent application, by controlling the driving result of the film thickness detecting means, the thickness of the boat is uniform and can be controlled according to the measured value, so that the desired film can be formed.

O:\90\90600.DOC -49- 1253359 圖3係供給機構與送液機構之概略圖。 圖4係送液機構之詳細圖。 圖5係驅動機構之詳細圖。 圖6係顯示第二種實施形態之送液機構與細縫喷嘴之連 接關係之概略圖。 圖7係顯示第二種實施形態之光阻泵及驅動機構圖。 圖8係顯示第三種實施形態之送液機構與細縫喷嘴之連 接關係之概略圖。 圖9係第四種實施形態之基板處理裝置本體部之正面圖。 圖10係顯示第四種實施形態之基板處理裝置之送液機構 與細缝喷嘴之連接關係之概略圖。 圖11係先前之送液裝置圖。 【圖式代表符號說明】 1 基板處理裝置 3 載台 6 控制系統 30 保持面 41 細縫喷嘴 410, 410a,410b 供給口 41a 排出口 42 間隙感測器 50, 51 線性馬達 70 供給機構 71 補充’裝置 O:\90\90600.DOC -51 - 1253359 72 73 74 75, 76, 76a,76b,83, 84 77 78 79, 79c,79, 79d 79a 79b 80,80a,80b,80c,80d 81,81a,81b 810 811 812 813 814 815 816 82,82a,82b,82c 85 86 87 88 89 缓衝槽 感測器 吸引配管 開閉閥 過濾器 止回閥 排出配管 第一配管 第二配管 送液機構 光阻泵 蓋 第一波紋管 第二波紋管 接合構件 管路. 吸引口 排出口 驅動機構 預備配管 廢液閥 廢液配管 抽氣閥 排氣配管 O:\90\90600.DOC -52- 1253359 90 基板 LQ 間接液 O:\90\90600.DOC -53 -O:\90\90600.DOC -49- 1253359 Figure 3 is a schematic view of the supply mechanism and the liquid supply mechanism. Figure 4 is a detailed view of the liquid supply mechanism. Figure 5 is a detailed view of the drive mechanism. Fig. 6 is a schematic view showing the connection relationship between the liquid supply mechanism and the slit nozzle of the second embodiment. Fig. 7 is a view showing a photoresist pump and a drive mechanism of the second embodiment. Fig. 8 is a schematic view showing the connection relationship between the liquid supply mechanism and the slit nozzle of the third embodiment. Fig. 9 is a front elevational view showing the main body of the substrate processing apparatus of the fourth embodiment. Fig. 10 is a schematic view showing the connection relationship between the liquid supply mechanism and the slit nozzle of the substrate processing apparatus of the fourth embodiment. Figure 11 is a diagram of a prior liquid delivery device. [Description of Symbols of Drawings] 1 Substrate processing apparatus 3 Stage 6 Control system 30 Holding surface 41 Slot nozzles 410, 410a, 410b Supply port 41a Discharge port 42 Gap sensor 50, 51 Linear motor 70 Supply mechanism 71 Supplement ' Apparatus O:\90\90600.DOC -51 - 1253359 72 73 74 75, 76, 76a, 76b, 83, 84 77 78 79, 79c, 79, 79d 79a 79b 80, 80a, 80b, 80c, 80d 81, 81a , 81b 810 811 812 813 814 815 816 82, 82a, 82b, 82c 85 86 87 88 89 Buffer tank sensor suction pipe opening and closing valve filter check valve discharge pipe first pipe second pipe liquid supply mechanism light resistance pump Cover first bellows second bellows joint member pipe. Suction port discharge drive mechanism preparatory pipe waste liquid valve waste liquid pipe exhaust valve exhaust pipe O:\90\90600.DOC -52- 1253359 90 substrate LQ indirect Liquid O:\90\90600.DOC -53 -

Claims (1)

1253 %®3i〇i977號專利申請案 中文申凊專利範圍替換本('9'4年12月)拾、申請專利範園:Patent application for 1253 %®3i〇i977 Chinese application for the replacement of patent scope ('9'4 December) pick-up, application for patent garden: -種基板處縣置,其㈣為··係在基板切成特定之處 理液膜者,且具備·· 保持台,其係保持基板,· 細缝噴嘴,其係將前述特定之處理液排出至基板之主面 口 ,其係供給前述特定之處理液;及 送液手段,其係將前述特定之處理液輸送至前述細缝喷 嘴; 、 前述送液手段具有·· 容器構件,其係可變更内部容積; 2構件,其係内部形成前述特定處理液之流路,並且 可變更内部容積;及 驅動手段,其係變更义 义— 炎更%動則述容器構件之内部容積; 構=谷器構件之内部配置有前述管路構件,在前述容器 2 路構件間之空間内封有間接液。 2. 專利錢項之基板處理裝置, 可述容器構件包含 μ -及第二波紋管, 内…,且内部彼此連通之第 前述驅動手段使前述第一 特定之方向移動。 及弟二波紋管之邊界近旁向 3 ·如申睛專利筋圍 么 、之基板處理裝置,1中 月’J返細縫噴嘴係一 ^ 定之處理液;、、土板相對移動,一面排出前述特 90600-941209.doc I j , ;,r……⑽⑽一一〜。一^ j 及第二波紋管之邊界近旁移動之速度控制成 〃則述細縫喷嘴之移動速度同步之速度。 4. 如:請專利範圍第1項之基板處理裝置,其中具備控制 别述驅動手段之控制手段; 前述控制手段具有: =容量供給手段,其係控制前述送液手段輸送之前述 将疋處理液之輸送量;及 2流量供給手段,其係㈣前料液手段之前述特定 處理液之流量。 5. 如申請專利範圍第1項之基板處理裝置,其中 則述运液手段内設有分別位於前述管路構件兩端側 吸引口及排出口; 並配置成前述吸引口及前述排出口之中任何一方A 度位置比另一方低。 万之向 6’如申請專利範圍第1項之基板處理裝置,其中 I述供給機構具有貯存前述特定處理液之緩衝槽,· 前述緩衝槽使前述送液手段在大氣麼下吸引前θ述特定 之處理液。 7·如申請專利範圍第6項之基板處理裳置,其中前述緩衝槽 之液面投定成比前述細縫喷嘴之排出口低之高度。 8·如申請專利範圍第6項之基板處理裝置,其中 /述供給機構進_步具有在前述緩衝槽内補充前述特 定處理液之補充手段; 前述補充手段以特定之壓力將貯存於前述緩衝槽内之 90600-941209.doc -2- :更: 刻j 細象: 觔述特疋之處理液輸送至前述細缝噴嘴。 9.=::利範圍第6項之基板處理裝置,其中前述供給機 人、有測疋手段,其係測定貯存於前述緩衝槽内之 月1J述特定之處理液量。 10·如申請專利範圍第8項之基板處理裝置,其中進—牛 路,其係藉由前述補充手段加堡輸送前述特二:處 入’,不經由前述送液手段,而將前述特定之處理液導 入W述細縫喷嘴。 守 ^申請專利範圍第1G項之基板處理裝置,其中進—步具 備· ’、 J液選!手段’ί係在將前述特定之處理液輸送至前述 、:广選擇糟由驅動前述驅動手段來送液與 述補充手段來送液之任何一方;及 擇手段’其係選擇經由前述送液手段輸送,或是 、、工由别述預備流路輸送。 12·如申請專利範圍第&quot;項之基板 摇主机θ丄 双1具中則述流路選 擇手奴/、有開閉前述預備流路之閥。 13·如申請專利範圍第丨項之基板處縣置,其中 前述送液手段具有: ^ 數個前述容器構件;及 逐一配置於前述數個容器構 件。 内邛之數個前述管路構 14·如申請專利範圍第13項之基板 送液配管,其係在 衣置’其中進一步具備 90600-941209.doc 1253359 ? ^ - - * . 之完 ……前述數個容1^構件與前述細縫喷嘴之間形成前述特定 處理液之流路; 在前述細縫喷嘴上設置數個處理液供給口, 並且前述送液配管係一對一地遠 地連接則述數個處理液供 …口與耵述數個容器構件。 I5·如申請專利範圍第4項之基板處理裝置,其中進—步 =厚檢測手段,其係檢測形成於基板表面之前述薄膜^ !, 予 手段依據前述膜厚檢測手段之檢測結果, 迷相之厚度均句之方式控制前述驅動機構。 .2=專利範圍第U項之基板處理裝置,其中前述驅動機 ,、刀別獨立地變更驅動前述^ ^ ^ 17. 如申嗜 — j Μ個W構件之内部容積。 構13項之基板處理裝置,其中前述驅動機 二連結㈣數個容器構件而 個容器構件Μ部容#。 夂更_則迷數 18. 如申請專利範圍第17項之基板 個容器構件之各個至前中使自則迷數 流路長度及粗細分別成為大致相::1“述达液配管之 19. 如申請專利範圍第i項之 段具備: &amp;處理破置’其中可述送液手 驅動馬達,其係產生二 球狀螺絲,1伟萨由 Ή ’定處理液用之驅動力; =件,其係與前述球狀螺絲::轉’ 引構件,盆传導兑 ”係&amp;引則迷螺母構件之驅動方向;及 90600-941209.doc -4- 1255359 — 刚述驅動馬達; 下之低速旋轉時具有1 %以下 馬達控制手段,其係控制 前述驅動馬達在50〇rpm以 之速度精確度,並對來自前述控制手段之控制,具有2]7p /rev以上之分解能力精確度; 則述球狀螺絲與前述螺母構件係由一體製造之構件所 成者。 20·如申請專利範圍第19項之基板處理裝置,其中前述球狀螺 絲之導程係3mm至6mm。 、 90600-941209.doc- (4) is a case where the substrate is cut into a specific processing liquid film, and includes a holding table for holding the substrate, and a slit nozzle for discharging the specific processing liquid The main surface port of the substrate is supplied with the specific processing liquid; and the liquid supply means is configured to transport the specific processing liquid to the slit nozzle; and the liquid feeding means has a container member, which is Changing the internal volume; 2 members, which form the flow path of the specific treatment liquid inside, and can change the internal volume; and the driving means, which change the meaning of the meaning - the more internal volume of the container member; The pipe member is disposed inside the member, and an indirect liquid is sealed in a space between the two members of the container. 2. A substrate processing apparatus according to the patent item, wherein the container member includes a μ- and a second bellows, and the first driving means that communicates with each other moves the first specific direction. The boundary of the bellows is adjacent to the side of the bellows. 3. For example, the substrate processing device of the application of the patented ribs, the middle of the month, the 'J-back spun nozzle is a treatment liquid; Special 90600-941209.doc I j , ;, r......(10)(10) one by one~. The speed at which the boundary of the vicinity of the boundary of the second bellows is controlled is 〃 the speed at which the moving speed of the slit nozzle is synchronized. 4. The substrate processing apparatus according to claim 1, wherein the control means includes: a capacity supply means for controlling the delivery of the hydrazine treatment liquid by the liquid supply means. And the flow rate supply means, wherein the flow rate of the specific treatment liquid of the pre-liquid means is (4). 5. The substrate processing apparatus according to claim 1, wherein the liquid transport means is provided with suction ports and discharge ports respectively located at both end sides of the pipe member; and is disposed between the suction port and the discharge port The A degree position of either party is lower than the other. The substrate processing apparatus according to claim 1, wherein the supply mechanism has a buffer tank for storing the specific treatment liquid, and the buffer tank causes the liquid supply means to be attracted to the atmosphere. Treatment solution. 7. The substrate processing according to claim 6, wherein the liquid level of the buffer tank is determined to be lower than a discharge opening of the slit nozzle. 8. The substrate processing apparatus according to claim 6, wherein the feeding means further comprises means for supplementing the specific processing liquid in the buffer tank; and the supplementary means is stored in the buffer tank at a specific pressure. In the 90600-941209.doc -2-: more: engraved j fine image: the treatment solution of the ribs is sent to the aforementioned slit nozzle. 9. The substrate processing apparatus according to item 6, wherein the supply robot and the measuring means measure the amount of the treatment liquid stored in the buffer tank. 10. The substrate processing apparatus according to item 8 of the patent application, wherein the inlet-nivine road is transported by the aforementioned supplementary means to the above-mentioned special two: into the ', without the aforementioned liquid feeding means, the specific one is The treatment liquid is introduced into the slit nozzle. ^ ^ Apply for the substrate processing device of the scope of the patent 1G, in which the step-by-step equipment ‘, J liquid selection! The means 'delivering the specific processing liquid to the above-mentioned: wide selection of any one of the liquid feeding means by the driving means to drive the liquid and the supplementary means; and the means for selecting the liquid supply means Transportation, or, work is carried out by a separate flow path. 12. If the substrate of the patent application scope &quot; item is shaken by the host θ丄, the flow path is selected as the hand slave/the valve that opens and closes the aforementioned preparatory flow path. 13. The substrate according to the ninth aspect of the patent application, wherein the liquid feeding means has: ^ a plurality of the container members; and one by one arranged in the plurality of container members. A plurality of the above-mentioned pipe structures 14 of the present invention, such as the substrate liquid feeding pipe of the thirteenth aspect of the patent application, which is further provided with a 90600-941209.doc 1253359 ? ^ - - * a flow path for forming the specific treatment liquid between the plurality of capacitor members and the slit nozzle; a plurality of processing liquid supply ports are provided in the slit nozzle, and the liquid supply piping is connected one-to-one far away A plurality of processing liquids are provided for the mouth and a plurality of container members. The substrate processing apparatus of claim 4, wherein the step-by-step thickness detecting means detects the film formed on the surface of the substrate, and the means is based on the detection result of the film thickness detecting means, and is obscured The thickness of the sentence is controlled in a manner that controls the aforementioned drive mechanism. The substrate processing apparatus of the Uth aspect of the invention, wherein the drive unit and the cutter independently change the internal volume of the W member. A substrate processing apparatus according to Item 13, wherein the driving machine 2 is connected to (four) a plurality of container members and the container member is a member.夂 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ For example, paragraph i of the scope of patent application has: &amp; processing breaks, which can be used to describe the liquid hand drive motor, which produces two ball screws, 1 Wessa's driving force for the treatment liquid; , the system and the aforementioned spheroidal screw:: turn 'lead member, basin conduction against the system&amp; guide the fan member driving direction; and 90600-941209.doc -4- 1255359 - just described the drive motor; At low speed rotation, there is a motor control means of less than 1%, which controls the speed accuracy of the above-mentioned drive motor at 50 rpm, and has an accuracy of decomposition capability of 2] 7 p / rev or more for control from the aforementioned control means; The ball screw and the nut member are formed of a member integrally manufactured. The substrate processing apparatus of claim 19, wherein the spherical screw has a lead length of 3 mm to 6 mm. , 90600-941209.doc
TW093101977A 2003-03-14 2004-01-29 Substrate processing device and liquid feeding device TWI253359B (en)

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JP2003069952A JP2004281645A (en) 2003-03-14 2003-03-14 Substrate treating device
JP2003069834A JP4184124B2 (en) 2003-03-14 2003-03-14 Substrate processing equipment

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