TWI252543B - Structure and method of pretreated substrate before processing - Google Patents

Structure and method of pretreated substrate before processing Download PDF

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Publication number
TWI252543B
TWI252543B TW094102895A TW94102895A TWI252543B TW I252543 B TWI252543 B TW I252543B TW 094102895 A TW094102895 A TW 094102895A TW 94102895 A TW94102895 A TW 94102895A TW I252543 B TWI252543 B TW I252543B
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TW
Taiwan
Prior art keywords
heat
double
circuit board
resistant
plate
Prior art date
Application number
TW094102895A
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Chinese (zh)
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TW200627554A (en
Inventor
Meng-Sung Yin
Tz-Jian Hu
Chian-Wei Jang
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Kinsus Interconnect Tech Corp
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Priority to TW094102895A priority Critical patent/TWI252543B/en
Application granted granted Critical
Publication of TWI252543B publication Critical patent/TWI252543B/en
Publication of TW200627554A publication Critical patent/TW200627554A/en

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  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

This invention provides a structure and a method of pretreated substrate before processing. There are a face with high adhesion and a face with low adhesion. The two faces exhibit adhesion of great difference on the two sides of the double-sided adhesion body. The face with high adhesion of the double-sided adhesion body is adhered closely to a heat-resistant plate of large size, and the face with low adhesion is adhered closely to a circuit board of large size. There are a plurality of semiconductor substrates on the circuit board of large size to be cut into independent substrates. When the semiconductor substrates are retrieved from the heat-resistant plate of large size, there is no residual adhesive left on the semiconductor substrates previously adhered tightly onto the face with low adhesion.

Description

1252543 九、發明說明: 【發明所屬之技術領域】 本發明係關於-齡序前之爾賴板結構與方法,尤如雙邮著體八 別與大片耐熱板和大片電路板緊密枯合之預處理載板結構與方法。刀 【先前技術】 在成本或其他因素的考量下,量產承載電子元件或是含有線路的載板時, -般都是先在大Μ输上_製作域數解導體餘,錢將大片電 路板上複數個半導體載板切割成各自獨立的載板,之後,於完成吹氣除 塵、水洗、超音波、烘鮮步驟,最後,進行紐職與產品包裳。'牙' 將半導體載板從大片電路板中切割的方法中,以中華民國專利第3助6 公告號「半導體元件之線路板及其製造方法」最為普遍。第肋%號專 利的方法主要是,在完作導體餘之後以及進行電_試等步叙 前,沿著半⑽彼關的邊界,在Μ電路㈣單面輕面上形成ν 型溝槽’致使沿著半導體敵彼此_邊界處將形鱗紐_田字狀紋 路(邮en〇。如此,當完成電性測試等步驟之後,可由熟練的工人用手 沿著預先形成的田字狀紋路,將半導體載板__折斷成獨 然而’由於這項折斷作業必須由熟練的工人 _ 千導體载板的折斷處 谷易帶有不酬之毛邊(flash) ’錢半導體额之尺寸精密度下降,因 51252543 IX. Description of the invention: [Technical field to which the invention pertains] The present invention relates to a structure and method for pre-sequence pre-sales, such as a double-weekly eight-piece and a large heat-resistant plate and a large circuit board. Processing the carrier structure and method. Knive [Prior Art] In the case of cost or other factors, when mass-produced electronic components or carrier boards containing lines, it is generally first to deal with the large number of conductors. A plurality of semiconductor carrier plates on the board are cut into separate carrier plates, and then, the steps of blowing, dusting, washing, ultrasonic, and baking are completed, and finally, the new job and the product package are performed. 'Tooth' In the method of cutting a semiconductor carrier board from a large-sized circuit board, it is most common in the Republic of China Patent No. 3, No. 6 publication No. "Semiconductor component circuit board and its manufacturing method". The method of the rib % patent is mainly to form a ν-shaped groove on the single-sided light surface of the Μ circuit (4) along the boundary of the half (10) and the boundary after the completion of the conductor and before the electro-test. So that along the semiconductor enemy's borders, the shape will be shaped like a letter. (After the completion of the electrical test and other steps, the skilled worker can use the hand along the pre-formed grain-like lines, The semiconductor carrier board _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ Cause 5

Claims (1)

1252543 十、申請專利範圍: 1 · 一種程序前之預處理載板結構,該載板結構包含: 一大片電路板,該大片電路板具有複數個半導體載 板,且沿著該些半導體載板之間的邊界已被切割成 各自獨立的載板; 一大片而寸熱板,該大片耐熱板的面積與該大片電路板 B 大致相當;以及 一雙面粘著體,該雙面粘著體的雙面上分別具有枯性 差異極大的黏性物質’該雙面钻著體的枯性較高者 與該大片耐熱板緊密粘合,且其粘性較低者與該大 片電路板緊密粘合。 2·如申請專利範圍第1項所述之載板結構,其中該半導體載 板的結構進一步包含: 一基板,該基板係至少包含可粘上Ic的一安穿座 (cavity);以及 • 一散熱金屬板,該散熱金屬板係藉著一接著劑與該美 板的底面粘合。 3.如中請專利範圍第2項所述之載板結構,其中該散熱金屬 板為銅合金。 12 /1252543 申明專利圍第2項所述之載板結構,其中在未與該基 板钻合的該散熱金屬板之表面上具有一錢錄層。 …h專利祀圍第2項所述之載板結構,其中該大片耐熱 反可為一鋁板或其他耐熱材質板。 該雙面粘著 6_•如申請專利範圍们項所述之載板結構,其中 體可為冑面膠♦或一可控制黏性物。 種程序前之預處理載板方法,該方法包含: 提供具有複數個半導體載板之—大片電路板; 提供面積與該大片電路板大致相當之一大片耐熱板; 使-雙面枯著體與該大片耐熱板之間形成高度枯合, 並使該又面粘著體與該大片電路板形成低度黏 合’使得該大片電路板和該^耐熱板彼此被緊密 結合,以及 將在該大片電路板上的該此 二千導體載板,沿著彼此的 邊界切割成各自獨立的薰祐 π戟扳,且已各自獨立的每一 半導體載板仍被該雙面钻荃駚 又命枯者體固定在該大片耐熱 板 其中該雙面粘著體可 8·如申請專利範圍第7項所述之方法 為—雙面膠帶或一可控制黏性物。 13 1252543 申明專利範圍第8項所述之方法,其中該雙面粘著體為 該雙面膠帶時,該方法進一步包含: 以該雙面膠帶的一高粘性面與該大片耐熱板緊密粘 合;以及 以該雙面膠帶的一低粘性面與該大片電路板緊密枯 3使得該大片電路板和該大片耐熱板彼此被緊密 結合。 10.如申作專利範圍第8項所述之方法,其中該雙面粘著體 為該可控制黏性物時,該方法進一步包含: 以該可控制黏性物先塗佈在該大片财熱板並待與該大 片耐熱板之間形成高度粘合; 加熱塗佈在該大片耐熱板上的該可控制黏性物;以及 以具有被加熱過的該可控制黏性物之該大片耐熱板枯 合該大片電路板,使之因溶劑揮發或/和交聯反應 而能與與該大片電路板之間形成低度枯合。 ,其中該半導體載板 11. 如申請專利範圍第7項所述之方法 的結構進一步包含: 基板’該基板係至少包含可粘上Ic的一安裝座 (cavity);以及 141252543 X. Patent Application Range: 1 · A pre-processed carrier structure before the program, the carrier structure comprises: a large circuit board having a plurality of semiconductor carriers, and along the semiconductor carriers The boundary between the two has been cut into separate carrier plates; a large and inch heat plate having an area substantially equivalent to the large circuit board B; and a double-sided adhesive body having the double-sided adhesive body The viscous material having a large difference in dryness on both sides respectively has a higher degree of dryness of the double-sided drilled body and is closely adhered to the large heat-resistant plate, and the lower viscosity thereof is closely adhered to the large-sized circuit board. 2. The carrier structure of claim 1, wherein the structure of the semiconductor carrier further comprises: a substrate comprising at least an occupant capable of adhering Ic; and The heat dissipating metal plate is bonded to the bottom surface of the veneer by an adhesive. 3. The carrier structure of claim 2, wherein the heat dissipating metal plate is a copper alloy. The carrier structure of claim 2, wherein a surface of the heat dissipating metal plate that is not drilled with the substrate has a recording layer. The invention relates to the carrier structure described in the second item, wherein the large piece of heat resistant material may be an aluminum plate or other heat resistant material plate. The double-sided adhesive 6_• is a carrier structure as described in the scope of the patent application, wherein the body may be a face rubber ♦ or a controllable viscous material. Pre-process pre-loading method, the method comprising: providing a plurality of semiconductor carriers - a large circuit board; providing a large heat-resistant plate having an area substantially equal to the large circuit board; Forming a high degree of ablation between the large heat-resistant plates and forming a low-bonding of the large-sized adhesive body with the large-sized circuit board, so that the large-sized circuit board and the heat-resistant plate are tightly coupled to each other, and the large-sized circuit will be The two thousand conductor carriers on the board are cut along the boundaries of each other into respective independent π 戟 , , and each of the semiconductor carriers that are independent of each other is still being smashed by the double sided drill The double-sided adhesive body can be fixed to the large heat-resistant plate. The method described in claim 7 is a double-sided tape or a controllable adhesive. The method of claim 8, wherein the double-sided adhesive body is the double-sided adhesive tape, the method further comprising: closely bonding the high-viscosity surface of the double-sided adhesive tape to the large heat-resistant plate And a low-viscosity surface of the double-sided tape and the large-sized circuit board are tightly sealed 3 such that the large-sized circuit board and the large heat-resistant board are tightly coupled to each other. 10. The method of claim 8, wherein when the double-sided adhesive is the controllable adhesive, the method further comprises: coating the large amount of the control with the controllable adhesive The hot plate is to be highly bonded to the large heat-resistant plate; the controllable adhesive coated on the large heat-resistant plate is heated; and the large piece having the heat-controllable adhesive is heat-resistant The board is ablated by the large circuit board so that it can form a low degree of ablation with the large circuit board due to solvent evaporation or/and cross-linking reaction. The semiconductor carrier board, the structure of the method of claim 7, further comprising: a substrate comprising at least a cavity to which Ic can be attached; and
TW094102895A 2005-01-31 2005-01-31 Structure and method of pretreated substrate before processing TWI252543B (en)

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Application Number Priority Date Filing Date Title
TW094102895A TWI252543B (en) 2005-01-31 2005-01-31 Structure and method of pretreated substrate before processing

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TWI252543B true TWI252543B (en) 2006-04-01
TW200627554A TW200627554A (en) 2006-08-01

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